TWI800499B - 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法 - Google Patents

相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法 Download PDF

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Publication number
TWI800499B
TWI800499B TW106146200A TW106146200A TWI800499B TW I800499 B TWI800499 B TW I800499B TW 106146200 A TW106146200 A TW 106146200A TW 106146200 A TW106146200 A TW 106146200A TW I800499 B TWI800499 B TW I800499B
Authority
TW
Taiwan
Prior art keywords
phase shift
shift mask
manufacturing
display device
same
Prior art date
Application number
TW106146200A
Other languages
English (en)
Chinese (zh)
Other versions
TW201832921A (zh
Inventor
坪井誠治
安森順一
Original Assignee
日商Ｈｏｙａ股份有限公司
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Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW201832921A publication Critical patent/TW201832921A/zh
Application granted granted Critical
Publication of TWI800499B publication Critical patent/TWI800499B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
TW106146200A 2017-01-16 2017-12-28 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法 TWI800499B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017-004875 2017-01-16
JP2017004875 2017-01-16
JP2017-230282 2017-11-30
JP2017230282A JP6891099B2 (ja) 2017-01-16 2017-11-30 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法

Publications (2)

Publication Number Publication Date
TW201832921A TW201832921A (zh) 2018-09-16
TWI800499B true TWI800499B (zh) 2023-05-01

Family

ID=62985516

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106146200A TWI800499B (zh) 2017-01-16 2017-12-28 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法
TW112111541A TWI808927B (zh) 2017-01-16 2017-12-28 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112111541A TWI808927B (zh) 2017-01-16 2017-12-28 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法

Country Status (4)

Country Link
JP (2) JP6891099B2 (enExample)
KR (2) KR102505733B1 (enExample)
CN (1) CN117518704A (enExample)
TW (2) TWI800499B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7420065B2 (ja) * 2018-03-15 2024-01-23 大日本印刷株式会社 大型フォトマスク
JP7151774B2 (ja) * 2018-09-14 2022-10-12 株式会社ニコン 位相シフトマスクブランクス、位相シフトマスク、露光方法、デバイスの製造方法、位相シフトマスクブランクスの製造方法、位相シフトマスクの製造方法、露光方法、及び、デバイスの製造方法
JP2022083394A (ja) * 2020-11-24 2022-06-03 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法及び表示装置の製造方法
KR20240003435A (ko) * 2021-04-30 2024-01-09 가부시키가이샤 니콘 위상 시프트 마스크 블랭크, 위상 시프트 마스크, 노광방법, 및 디바이스의 제조 방법
KR102402742B1 (ko) * 2021-04-30 2022-05-26 에스케이씨솔믹스 주식회사 포토마스크 블랭크 및 이를 이용한 포토마스크

Citations (1)

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JP2005092241A (ja) * 2002-03-01 2005-04-07 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法

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JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
JPH10186632A (ja) * 1996-10-24 1998-07-14 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスク
JP2983020B1 (ja) * 1998-12-18 1999-11-29 ホーヤ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2001083687A (ja) * 1999-09-09 2001-03-30 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びこれを作製するためのハーフトーン位相シフトフォトマスク用ブランクス
US6500587B1 (en) * 2001-02-02 2002-12-31 Advanced Micro Devices, Inc. Binary and attenuating phase-shifting masks for multiple wavelengths
JP2003322947A (ja) * 2002-04-26 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP4784983B2 (ja) * 2006-01-10 2011-10-05 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP5121020B2 (ja) * 2008-09-26 2013-01-16 Ｈｏｙａ株式会社 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法
KR101282040B1 (ko) 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
JP6138676B2 (ja) * 2013-12-27 2017-05-31 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
JP5743008B2 (ja) * 2014-06-06 2015-07-01 信越化学工業株式会社 フォトマスクブランク及びその製造方法、フォトマスク、光パターン照射方法、並びにハーフトーン位相シフト膜の設計方法
WO2016103843A1 (ja) * 2014-12-26 2016-06-30 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6322250B2 (ja) * 2016-10-05 2018-05-09 Hoya株式会社 フォトマスクブランク

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JP2005092241A (ja) * 2002-03-01 2005-04-07 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法

Also Published As

Publication number Publication date
CN117518704A (zh) 2024-02-06
JP2021144237A (ja) 2021-09-24
KR102548886B1 (ko) 2023-06-30
JP2018116263A (ja) 2018-07-26
TWI808927B (zh) 2023-07-11
JP6891099B2 (ja) 2021-06-18
KR20180084636A (ko) 2018-07-25
KR102505733B1 (ko) 2023-03-03
TW202328801A (zh) 2023-07-16
KR20230035005A (ko) 2023-03-10
TW201832921A (zh) 2018-09-16
JP7095157B2 (ja) 2022-07-04

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