TWI799913B - 半導體結構及其形成方法 - Google Patents

半導體結構及其形成方法 Download PDF

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Publication number
TWI799913B
TWI799913B TW110125348A TW110125348A TWI799913B TW I799913 B TWI799913 B TW I799913B TW 110125348 A TW110125348 A TW 110125348A TW 110125348 A TW110125348 A TW 110125348A TW I799913 B TWI799913 B TW I799913B
Authority
TW
Taiwan
Prior art keywords
forming
same
semiconductor structure
semiconductor
Prior art date
Application number
TW110125348A
Other languages
English (en)
Other versions
TW202303784A (zh
Inventor
陳彥樵
Original Assignee
華邦電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 華邦電子股份有限公司 filed Critical 華邦電子股份有限公司
Priority to TW110125348A priority Critical patent/TWI799913B/zh
Priority to US17/841,967 priority patent/US20230010665A1/en
Publication of TW202303784A publication Critical patent/TW202303784A/zh
Application granted granted Critical
Publication of TWI799913B publication Critical patent/TWI799913B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70658—Electrical testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW110125348A 2021-07-09 2021-07-09 半導體結構及其形成方法 TWI799913B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW110125348A TWI799913B (zh) 2021-07-09 2021-07-09 半導體結構及其形成方法
US17/841,967 US20230010665A1 (en) 2021-07-09 2022-06-16 Semiconductor structure and method for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW110125348A TWI799913B (zh) 2021-07-09 2021-07-09 半導體結構及其形成方法

Publications (2)

Publication Number Publication Date
TW202303784A TW202303784A (zh) 2023-01-16
TWI799913B true TWI799913B (zh) 2023-04-21

Family

ID=84798421

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110125348A TWI799913B (zh) 2021-07-09 2021-07-09 半導體結構及其形成方法

Country Status (2)

Country Link
US (1) US20230010665A1 (zh)
TW (1) TWI799913B (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201943024A (zh) * 2018-03-28 2019-11-01 台灣積體電路製造股份有限公司 半導體裝置及其形成方法
TW202016993A (zh) * 2018-09-28 2020-05-01 台灣積體電路製造股份有限公司 積體電路及其形成方法
TW202121590A (zh) * 2019-09-30 2021-06-01 台灣積體電路製造股份有限公司 半導體裝置及其製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201943024A (zh) * 2018-03-28 2019-11-01 台灣積體電路製造股份有限公司 半導體裝置及其形成方法
TW202016993A (zh) * 2018-09-28 2020-05-01 台灣積體電路製造股份有限公司 積體電路及其形成方法
TW202121590A (zh) * 2019-09-30 2021-06-01 台灣積體電路製造股份有限公司 半導體裝置及其製造方法

Also Published As

Publication number Publication date
US20230010665A1 (en) 2023-01-12
TW202303784A (zh) 2023-01-16

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