TWI795571B - 石英玻璃坩堝 - Google Patents
石英玻璃坩堝 Download PDFInfo
- Publication number
- TWI795571B TWI795571B TW108120019A TW108120019A TWI795571B TW I795571 B TWI795571 B TW I795571B TW 108120019 A TW108120019 A TW 108120019A TW 108120019 A TW108120019 A TW 108120019A TW I795571 B TWI795571 B TW I795571B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- devitrification
- quartz glass
- glass crucible
- aforementioned
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 225
- 238000004031 devitrification Methods 0.000 claims abstract description 320
- 238000010438 heat treatment Methods 0.000 claims abstract description 37
- 239000011521 glass Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 description 134
- 239000002994 raw material Substances 0.000 description 99
- 238000002425 crystallisation Methods 0.000 description 21
- 230000008025 crystallization Effects 0.000 description 21
- 239000012535 impurity Substances 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 239000013078 crystal Substances 0.000 description 13
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- 239000010453 quartz Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000001737 promoting effect Effects 0.000 description 7
- 229910052788 barium Inorganic materials 0.000 description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 6
- 238000010891 electric arc Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000005350 fused silica glass Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000011043 treated quartz Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-150790 | 2018-08-09 | ||
| JP2018150790A JP7349779B2 (ja) | 2018-08-09 | 2018-08-09 | 石英ガラスるつぼ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202018134A TW202018134A (zh) | 2020-05-16 |
| TWI795571B true TWI795571B (zh) | 2023-03-11 |
Family
ID=69415494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108120019A TWI795571B (zh) | 2018-08-09 | 2019-06-11 | 石英玻璃坩堝 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11821103B2 (enExample) |
| EP (1) | EP3835270B1 (enExample) |
| JP (1) | JP7349779B2 (enExample) |
| KR (1) | KR102788131B1 (enExample) |
| CN (1) | CN112533878A (enExample) |
| SG (1) | SG11202101068VA (enExample) |
| TW (1) | TWI795571B (enExample) |
| WO (1) | WO2020031481A1 (enExample) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000247778A (ja) * | 1999-02-25 | 2000-09-12 | Toshiba Ceramics Co Ltd | 石英ガラスルツボおよびその製造方法ならびにこれを用いたシリコン単結晶の引上げ方法 |
| TWI447391B (zh) * | 2010-08-12 | 2014-08-01 | Japan Super Quartz Corp | 氧化矽粉末的評價方法、氧化矽玻璃坩堝以及氧化矽玻璃坩堝的製造方法 |
| JP2018104247A (ja) * | 2016-12-28 | 2018-07-05 | クアーズテック株式会社 | シリカ焼結体とその製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10182139A (ja) * | 1996-12-18 | 1998-07-07 | Mitsubishi Chem Corp | 合成石英ガラス粉末の品質評価方法 |
| JPH10203893A (ja) * | 1997-01-20 | 1998-08-04 | Mitsubishi Materials Shilicon Corp | 高強度石英ガラスルツボ及びその製造方法 |
| JP4140868B2 (ja) * | 1998-08-31 | 2008-08-27 | 信越石英株式会社 | シリコン単結晶引き上げ用石英ガラスるつぼ及び その製造方法 |
| DE10217946A1 (de) * | 2002-04-22 | 2003-11-13 | Heraeus Quarzglas | Quarzglastiegel und Verfahren zur Herstellung desselben |
| JP4717771B2 (ja) * | 2006-09-28 | 2011-07-06 | コバレントマテリアル株式会社 | シリカガラスルツボ |
| JP4814855B2 (ja) | 2007-09-28 | 2011-11-16 | コバレントマテリアル株式会社 | シリカガラスルツボ |
| JP5069663B2 (ja) | 2008-10-31 | 2012-11-07 | ジャパンスーパークォーツ株式会社 | 多層構造を有する石英ガラスルツボ |
| JP5992572B2 (ja) | 2010-08-12 | 2016-09-14 | 株式会社Sumco | シリカ粉の評価方法、シリカガラスルツボ、シリカガラスルツボの製造方法 |
| JP2017186135A (ja) * | 2016-04-07 | 2017-10-12 | 理想科学工業株式会社 | 印刷システム |
| JP2018104248A (ja) * | 2016-12-28 | 2018-07-05 | クアーズテック株式会社 | シリコン単結晶引上げ用石英ガラスルツボ |
| JP6855358B2 (ja) | 2017-09-27 | 2021-04-07 | クアーズテック株式会社 | シリコン単結晶引上げ用石英ガラスルツボ |
-
2018
- 2018-08-09 JP JP2018150790A patent/JP7349779B2/ja active Active
-
2019
- 2019-06-04 WO PCT/JP2019/022168 patent/WO2020031481A1/ja not_active Ceased
- 2019-06-04 US US17/267,283 patent/US11821103B2/en active Active
- 2019-06-04 EP EP19847282.1A patent/EP3835270B1/en active Active
- 2019-06-04 KR KR1020217003924A patent/KR102788131B1/ko active Active
- 2019-06-04 CN CN201980050978.XA patent/CN112533878A/zh active Pending
- 2019-06-04 SG SG11202101068VA patent/SG11202101068VA/en unknown
- 2019-06-11 TW TW108120019A patent/TWI795571B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000247778A (ja) * | 1999-02-25 | 2000-09-12 | Toshiba Ceramics Co Ltd | 石英ガラスルツボおよびその製造方法ならびにこれを用いたシリコン単結晶の引上げ方法 |
| TWI447391B (zh) * | 2010-08-12 | 2014-08-01 | Japan Super Quartz Corp | 氧化矽粉末的評價方法、氧化矽玻璃坩堝以及氧化矽玻璃坩堝的製造方法 |
| JP2018104247A (ja) * | 2016-12-28 | 2018-07-05 | クアーズテック株式会社 | シリカ焼結体とその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020031481A1 (ja) | 2020-02-13 |
| SG11202101068VA (en) | 2021-03-30 |
| US11821103B2 (en) | 2023-11-21 |
| KR20210040976A (ko) | 2021-04-14 |
| CN112533878A (zh) | 2021-03-19 |
| US20210310151A1 (en) | 2021-10-07 |
| JP7349779B2 (ja) | 2023-09-25 |
| TW202018134A (zh) | 2020-05-16 |
| KR102788131B1 (ko) | 2025-03-31 |
| EP3835270B1 (en) | 2025-11-26 |
| EP3835270A1 (en) | 2021-06-16 |
| EP3835270A4 (en) | 2022-05-04 |
| JP2020026362A (ja) | 2020-02-20 |
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