TWI795503B - Semiconductor Back Adhesive Film - Google Patents

Abstract

The present invention provides a semiconductor back adhesive film excellent in laser marking property and infrared shielding property. The total light transmittance in the wavelength region of 500-1300 nm of the adhesive film on the semiconductor back surface of the present invention is 20% or less. It is preferable that the difference between the total light absorbance at a wavelength of 500 nm and the total light absorbance at a wavelength of 1300 nm of the above-mentioned adhesive film on the back surface of a semiconductor is 2 or less. It is preferable that the said adhesive film for the back surface of a semiconductor contains the infrared absorber which has a maximum absorption wavelength at 850 nm or more in the wavelength region of 500-2000 nm.

Description

Semiconductor Back Adhesive Film

The present invention relates to an adhesive film for the back surface of a semiconductor. More specifically, the present invention relates to a semiconductor back adhesive film that can be used in the manufacturing process of semiconductor devices.

In recent years, it has been widely used in flip-chip semiconductor devices in which semiconductor elements such as semiconductor chips are mounted on substrates by flip-chip bonding. In flip-chip semiconductor devices, in order to prevent damage to the semiconductor element, etc., a semiconductor backside adhesive film may be used as a film for forming a protective film on the backside of the semiconductor element (see Patent Documents 1 and 2). [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2011-151360 [Patent Document 2] International Publication No. 2014/092200

[Problem to be solved by the invention]

Conventional semiconductor backside adhesive films are usually formulated with a colorant so that marking information can be given by laser marking, and also have light-shielding properties. However, in recent years, the thinning of the silicon layer has progressed. Along with this, thinning of the adhesive film on the semiconductor back surface is also required. However, if the silicon layer is thinned, the wavelength of transmitted light will expand from infrared to visible light. In addition, when there are many colorants that have visible light absorption for laser marking, there are many colorants that do not have absorption in the near-infrared with regard to the adhesive film on the back of the semiconductor. The problem of light-shielding reduction. If the light-shielding property of the adhesive film on the back of the semiconductor is poor, light will easily pass through, so that the circuit surface of the semiconductor will be affected by noise or other adverse effects due to light transmission, or the circuit surface will become invisible by using an infrared microscope, etc. Maintain secrecy.

The present invention was made in view of the above problems, and an object of the present invention is to provide a semiconductor backside adhesive film excellent in laser marking properties and infrared shielding properties. [Technical means to solve the problem]

The inventors conducted intensive research to achieve the above object, and as a result, found that a semiconductor back-adhesive film with a total light transmittance of 20% or less in the wavelength range of 500 to 1300 nm has excellent laser marking properties and infrared shielding properties. . This invention was completed based on these knowledge.

That is, the present invention provides a semiconductor backside adhesive film having a total light transmittance of 20% or less in the wavelength range of 500 to 1300 nm. The adhesive film on the semiconductor back surface of such a structure can be used in the manufacturing process of a semiconductor device.

As mentioned above, the adhesive film for the semiconductor back surface of the present invention has a total light transmittance of 20% or less in the wavelength region of 500 to 1300 nm. The semiconductor back adhesive film of the present invention having such a structure has a low total light transmittance in the wavelength range from visible light to infrared, so it has excellent laser marking properties, can sufficiently absorb infrared rays, and has excellent infrared shielding properties.

It is preferable that the difference between the total light absorbance at a wavelength of 500 nm and the total light absorbance at a wavelength of 1300 nm of the semiconductor back-adhesive film of the present invention is 2 or less. By having such a structure, the semiconductor back adhesive film of the present invention can equally shield visible light and infrared rays, and is equally excellent in laser marking properties and infrared shielding properties.

The semiconductor back adhesive film of the present invention preferably contains an infrared absorber having a maximum absorption wavelength of 850 nm or higher in the wavelength range of 500 to 2000 nm. With such a configuration, the total light transmittance at a wavelength of 1300 nm tends to be low.

In the adhesive film for back surface of semiconductor of the present invention, the content ratio of the infrared absorber is preferably 0.2 to 30% by mass. With such a configuration, the total light transmittance at a wavelength of 1300 nm tends to be low.

The semiconductor back adhesive film of the present invention preferably contains a visible light absorbing dye having a maximum value of absorbance in the wavelength range of 350 to 700 nm. With such a configuration, the total light transmittance at a wavelength of 500 nm tends to be low. In addition, when laser marking is carried out with dicing tape attached, air bubbles are less likely to be generated between the adhesive film on the back surface of the semiconductor and the dicing tape, and the appearance after laser marking is excellent.

In the adhesive film for back surface of semiconductor of the present invention, the content ratio of the visible light absorbing dye is preferably 0.05 to 10% by mass. With such a configuration, the total light transmittance at a wavelength of 500 nm tends to be low. Also, good printing properties (printed characters with good visibility) can be obtained. Furthermore, air bubbles are less likely to be generated between the back adhesive film and the dicing tape when laser marking is performed with the dicing tape attached.

The semiconductor back adhesive film of the present invention preferably contains epoxy resin and acrylic resin. With such a configuration, both the adhesiveness of the adhesive film on the back surface of the semiconductor to the workpiece and the good cutting performance during dicing can be achieved, and the adhesiveness to the workpiece becomes stronger by thermosetting. Moreover, there exists a tendency for the content of the ionic impurity etc. which may cause corrosion of a semiconductor wafer to become small.

The semiconductor back adhesive film of the present invention preferably contains a filler. With such a configuration, it is easy to adjust physical properties such as elastic modulus, yield point strength, and elongation at break of the adhesive film on the back surface of the semiconductor. In addition, diffuse reflection of light irradiated during laser marking can be suppressed, infrared shielding properties are excellent, and marking information can be given more clearly by laser marking. [Effect of Invention]

The semiconductor back-adhesive film of the present invention is excellent in laser marking property and infrared shielding property. Therefore, by using the semiconductor back adhesive film of the present invention, even when the semiconductor wafer is thinned, laser marking can be clearly performed, and furthermore, it is possible to suppress damage to the circuit surface of the semiconductor when it is irradiated with infrared rays. adverse effects, or visible circuit surfaces.

[Semiconductor Back Adhesive Film] The total light transmittance in the wavelength range of 500 to 1300 nm of the semiconductor back adhesive film of the present invention (sometimes simply referred to as "back adhesive film") is 20% or less. Furthermore, in this specification, the so-called "surface" of a semiconductor (workpiece) refers to the surface of the workpiece on which bumps for flip-chip mounting are formed, and the so-called "backside" refers to the opposite side of the surface, that is, no bumps are formed. face of the block. In addition, the "back adhesive film" refers to a film used to adhere to the back surface of a semiconductor, including a film for forming a protective film on the back surface (so-called inner surface) of a semiconductor wafer (semiconductor inner surface protective film). In addition, in this specification, the so-called "back adhesive film" refers to a film that is also adhered to the back surface of the workpiece after being mounted on the semiconductor device, and does not include the following dicing tape or isolation film that will be peeled off during the manufacturing process of the semiconductor device. layer. The back adhesive film of the present invention may have a single-layer structure or a multi-layer structure.

The total light transmittance in the wavelength region of 500-1300 nm of the back adhesive film of the present invention is 20% or less, preferably 18% or less, more preferably 16% or less. By making the above-mentioned total light transmittance 20% or less, the back adhesive film of the present invention has a low total light transmittance in the wavelength region from visible light to infrared rays, so it has excellent laser marking properties and can sufficiently absorb infrared rays, while infrared rays Excellent masking properties. The above-mentioned total light transmittance can be measured using a known spectrophotometer.

The total light absorbance at a wavelength of 500 nm and the total light absorbance at a wavelength of 1300 nm of the back adhesive film of the present invention are preferably at least 0.8, more preferably at least 1.0. When the total light absorbance at the above-mentioned wavelength of 500 nm is 0.8 or more, the amount of visible light absorption increases, and the laser labeling property becomes more excellent. If the total light absorbance at the above-mentioned wavelength of 1300 nm is 0.8 or more, the amount of infrared absorption increases, and the infrared shielding property is further excellent. The above-mentioned total light absorbance can be measured using a known spectrophotometer.

The back adhesive film of the present invention is preferably such that the difference between the total light absorbance at a wavelength of 500 nm and the total light absorbance at a wavelength of 1300 nm [｜1300 nm-500 nm｜absorbance difference] is 2 or less, more preferably 1.95 or less, and further Preferably it is 1.9 or less. If the above-mentioned difference in total light absorbance is 2 or less, the back adhesive film of the present invention can equally shield visible light and infrared rays, and is equally excellent in laser marking properties and infrared shielding properties. The above-mentioned total light absorbance can be measured using a known spectrophotometer.

The back adhesive film and the composition (resin composition) for forming the back adhesive film of the present invention preferably contain a thermoplastic resin. When the back adhesive film is thermosetting, the back adhesive film and the resin composition of the present invention may contain a thermosetting resin and a thermoplastic resin, or may contain a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to form a bond. When the back adhesive film of the present invention contains a thermoplastic resin having a thermosetting functional group, the resin composition does not need to contain a thermosetting resin (epoxy resin, etc.).

The thermoplastic resin in the back adhesive film of the present invention is, for example, a function of an adhesive. Examples of the above-mentioned thermoplastic resin include: acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate Copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, polyethylene terephthalic acid Saturated polyester resins such as ethylene glycol (PET) or polybutylene terephthalate (PBT), polyamideimide resins, fluororesins, etc. The above-mentioned thermoplastic resins may be used alone or in combination of two or more. As said thermoplastic resin, an acrylic resin is preferable from the viewpoint of having few ionic impurities and having high heat resistance.

The above-mentioned acrylic resin is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth)acryl group in a molecule) as a structural unit of the polymer. The aforementioned acrylic resin is preferably a polymer containing the most structural units derived from (meth)acrylate in terms of mass ratio. In addition, acrylic resin may use only 1 type, and may use 2 or more types. Also, in this specification, "(meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid" (either or both of "acrylic acid" and "methacrylic acid"), and others same.

As said (meth)acrylate, the hydrocarbon group containing (meth)acrylate which may have an alkoxy group is mentioned, for example. Examples of the hydrocarbon group-containing (meth)acrylate include alkyl (meth)acrylate, cycloalkyl (meth)acrylate, aryl (meth)acrylate, and the like. Examples of the above-mentioned alkyl (meth)acrylates include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second-butyl, and third-butyl (meth)acrylates. , pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester ( lauryl ester), tridecyl ester, myristyl ester, hexadecyl ester, stearyl ester, eicosyl ester, etc. As said cycloalkyl (meth)acrylate, cyclopentyl (meth)acrylate, cyclohexyl, etc. are mentioned, for example. As said aryl (meth)acrylate, the phenyl ester and benzyl (meth)acrylate are mentioned, for example. Examples of the hydrocarbon group-containing (meth)acrylate having an alkoxy group include those in which at least one hydrogen atom in the hydrocarbon group in the above-mentioned hydrocarbon group-containing (meth)acrylate is replaced by an alkoxy group, for example, Examples include 2-methoxymethyl, 2-methoxyethyl, and 2-methoxybutyl (meth)acrylic acid. The above-mentioned hydrocarbon group-containing (meth)acrylates which may have an alkoxy group may be used alone or in combination of two or more.

The above-mentioned acrylic resin may contain structural units derived from other monomer components copolymerizable with a hydrocarbon group-containing (meth)acrylate that may have an alkoxy group for the purpose of improving cohesion, heat resistance, and the like. Examples of the other monomer components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, Acrylamide, acrylonitrile and other functional group-containing monomers, etc. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, butylene Acid etc. As said acid anhydride monomer, maleic anhydride, itaconic anhydride, etc. are mentioned, for example. Examples of the hydroxyl group-containing monomer include: 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, (meth)acrylic acid 6-Hydroxyhexyl, 8-Hydroxyoctyl (meth)acrylate, 10-Hydroxydecyl (meth)acrylate, 12-Hydroxylauryl (meth)acrylate, (4-Hydroxymethyl)(meth)acrylate Cyclohexyl) methyl ester, etc. As said glycidyl group containing monomer, glycidyl (meth)acrylate, methylglycidyl (meth)acrylate, etc. are mentioned, for example. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide Propanesulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloxynaphthalenesulfonic acid, etc. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate and the like. The above-mentioned other monomer components may be used only by one type, or two or more types may be used.

The acrylic resin that can be contained in the back adhesive film of the present invention is preferably suitably selected from butyl acrylate, acrylic acid Copolymer of monomers in ethyl ester, acrylonitrile, and acrylic acid.

When the back adhesive film of the present invention contains both a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resins, phenol resins, amine resins, unsaturated polyester resins, and polyurethane resins. resin, silicone resin, thermosetting polyimide resin, etc. The above-mentioned thermosetting resins may be used alone, or two or more kinds may be used. Since there is a tendency for the content of ionic impurities, which may cause corrosion of the semiconductor wafer, to be small, the above-mentioned thermosetting resin is preferably an epoxy resin. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.

Examples of the above-mentioned epoxy resins include bisphenol A epoxy resins, bisphenol F epoxy resins, bisphenol S epoxy resins, brominated bisphenol A epoxy resins, hydrogenated bisphenol A epoxy resins, and bisphenol A epoxy resins. Oxygen resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fennel type epoxy resin, phenolic novolak type epoxy resin, o-cresol novolak type epoxy resin, etc. Multifunctional epoxy resins such as phenol novolak type epoxy resin, trihydroxyphenylmethane type epoxy resin, and tetraphenol ethane type epoxy resin. The said epoxy resin may use only 1 type, and may use 2 or more types. Among these, phenolic novolak-type epoxy resins, o-cresol novolac-type epoxy resins, and biphenyl-type epoxy resins are preferable in terms of high reactivity with phenol resins as hardeners and excellent heat resistance. Resin, trihydroxyphenylmethane type epoxy resin, tetraphenol ethane type epoxy resin.

Examples of phenolic resins that function as hardeners for epoxy resins include phenol novolac resins, phenol aralkyl resins, cresol novolak resins, tertiary butylphenol novolak resins, and nonylphenol novolak resins. Resin and other phenolic resins. Moreover, polyoxystyrenes, such as a resole type phenol resin and polyparahydroxystyrene, are also mentioned as this phenol resin. The above-mentioned phenol resins may be used alone or in combination of two or more.

In the back adhesive film of the present invention, from the viewpoint of sufficiently advancing the hardening reaction between the epoxy resin and the phenol resin, the phenol resin is based on 1 equivalent of the epoxy group in the epoxy resin component, and the amount of the phenol resin in the phenol resin is The hydroxyl group is preferably contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

When the back adhesive film of the present invention contains a thermosetting resin, the content ratio of the thermosetting resin is preferably 5 to 60% with respect to the total mass of the back adhesive film of the present invention from the viewpoint of properly curing the back adhesive film. % by mass, more preferably 10 to 50% by mass.

When the back adhesive film of the present invention contains a thermoplastic resin having a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin having a thermosetting functional group can be used. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth)acrylate as the most structural unit in terms of mass ratio. Examples of the hydrocarbon group-containing (meth)acrylate include those exemplified as the hydrocarbon group-containing (meth)acrylate of the acrylic resin forming the thermoplastic resin that can be contained in the back adhesive film of the present invention. of (meth)acrylates. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among them, glycidyl group and carboxyl group are preferable. That is, as the thermosetting functional group-containing acrylic resin, glycidyl group-containing acrylic resin and carboxyl group-containing acrylic resin are particularly preferable. Furthermore, it is preferable to contain a thermosetting functional group-containing acrylic resin and a curing agent together. As the curing agent, for example, the crosslinking agent exemplified as the following radiation-curable adhesive for adhesive layer formation can be contained. By. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, for example, the above-mentioned various phenolic resins can be used.

When the back adhesive film of the present invention contains a thermosetting resin, it is preferable to contain a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is contained, the curing reaction of the resin component can be sufficiently advanced during the curing of the back adhesive film, or the curing reaction speed can be increased. As said thermosetting catalyst, an imidazole type compound, a triphenylphosphine type compound, an amine type compound, a trihalogen borane type compound, etc. are mentioned, for example. Examples of imidazole compounds include: 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methyl Imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methyl Imidazolyl-(1')]-Ethyl-S-Trisyl, 2,4-Diamino-6-[2'-Undecylimidazolyl-(1')]-Ethyl-S-Trisinyl, 2,4-Diamino-6-[2'-Ethyl-4'-methylimidazolyl-(1')]-Ethyl-S-S-3-3,2,4-Diamino-6-[2 '-Methylimidazolyl-(1')]-ethyl-s-tri-isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4- Methyl-5-hydroxymethylimidazole, etc. Examples of triphenylphosphine compounds include: triphenylphosphine, tributylphosphine, tris(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, diphenyltolylphosphine, bromide Tetraphenylphosphonium, methyltriphenylphosphonium, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium, benzyltriphenylphosphonium chloride, and the like. The triphenylphosphine compound also includes a compound having both a triphenylphosphine structure and a triphenylborane structure. As such a compound, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetrakis-p-borate, benzyltriphenylphosphonium tetraphenylborate, triphenylphosphinetriphenylborane, etc. are mentioned, for example. As an amine compound, monoethanolamine trifluoroborate, dicyandiamide, etc. are mentioned, for example. As a trihalogen borane compound, trichloroborane etc. are mentioned, for example. The said thermosetting catalyst may contain only 1 type, and may contain 2 or more types.

The back adhesive film of the present invention may also contain a filler. By containing fillers, it is easy to adjust the elastic modulus, yield point strength, elongation at break and other physical properties of the back adhesive film. In addition, diffuse reflection of light irradiated during laser marking can be suppressed, infrared shielding properties are excellent, and marking information can be given more clearly by laser marking. Examples of fillers include inorganic fillers and organic fillers. Examples of constituent materials of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whiskers , silicon nitride, boron nitride, crystalline silicon dioxide, amorphous silicon dioxide, etc. Moreover, as a constituent material of an inorganic filler, a simple metal, such as aluminum, gold, silver, copper, nickel, or alloy, amorphous carbon, graphite, etc. are mentioned. Examples of constituent materials of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. The above-mentioned fillers may contain only one kind, or may contain two or more kinds.

The above-mentioned filler may have various shapes such as spherical shape, needle shape, and flake shape. The average particle size of the above-mentioned filler is preferably 10 μm or less, more preferably 8 μm or less, further preferably 7 μm or less. The above average particle diameter is preferably at least 0.1 μm, more preferably at least 0.2 μm. When the above-mentioned average particle size is 10 μm or less, diffuse reflection of light irradiated during laser marking can be suppressed, infrared shielding properties are excellent, and marking information can be more clearly imparted by laser marking. Moreover, it is more excellent in cutting property for the back adhesive film for chipping. In this specification, the average particle diameter of a filler can be calculated|required using the photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba Seisakusho Co., Ltd.), for example.

The content of the filler is preferably at least 10% by mass, more preferably at least 15% by mass, and still more preferably at least 20% by mass, based on the total mass of the back adhesive film of the present invention. The above content ratio is preferably at most 50% by mass, more preferably at most 47% by mass, more preferably at most 45% by mass.

The back adhesive film of the present invention may also contain a coloring agent. The above-mentioned colorant may be a pigment or a dye. As a coloring agent, a black coloring agent, a cyan coloring agent, a magenta coloring agent, a yellow coloring agent etc. are mentioned, for example. From the viewpoint of securing a high contrast between the laser-marked marking portion of the back adhesive film and other portions and achieving good visibility of the marking information, a black-based colorant is preferred. The said coloring agent may contain only 1 type, and may contain 2 or more types.

Examples of black-based colorants include azo-based pigments such as carbon black, carbon nanotubes, graphite (black lead), copper oxide, manganese dioxide, azo black, aniline black, perylene black, titanium Black, cyan black, activated carbon, ferrite, magnetite, chromium oxide, iron oxide, molybdenum disulfide, composite oxide black pigment, anthraquinone organic black dye, azo organic black dye, etc. Examples of carbon black include furnace black, chimney black, acetylene black, thermal black, and lamp black. As the black coloring agent, also can enumerate: C.I. Solvent Black 3, Tong 7, Tong 22, Tong 27, Tong 29, Tong 34, Tong 43, Tong 70; C.I. Direct Black 17, Tong 19, Tong 22, Tong 32, Same 38, same 51, same 71; C.I. acid black 1, same 2, same 24, same 26, same 31, same 48, same 52, same 107, same 109, same 110, same 119, same 154; C.I. disperse black 1, Same as 3, Same as 10, Same as 24; C.I. Pigment Black 1, Same as 7, etc.

Examples of cyan-based colorants include: C.I. Solvent Blue 25, Tong 36, Tong 60, Tong 70, Tong 93, Tong 95; C.I. Acid Blue 6, Tong 45; C.I. Pigment Blue 1, Tong 2, Tong 3, Tong 95; 15. Same as 15:1, same 15:2, same 15:3, same 15:4, same 15:5, same 15:6, same 16, same 17, same 17:1, same 18, same 22, same 25, Same 56, Same 60, Same 63, Same 65, Same 66; C.I. Vat Blue 4; Same 60, C.I. Pigment Green 7, etc.

Examples of magenta colorants include: C.I. Solvent Red 1, TO 3, TO 8, TO 23, TO 24, TO 25, TO 27, TO 30, TO 49, TO 52, TO 58, TO 63, TO 81 , Same 82, Same 83, Same 84, Same 100, Same 109, Same 111, Same 121, Same 122; C.I. Disperse Red 9; C.I. Solvent Violet 8, Same 13, Same 14, Same 21, Same 27; C.I. Disperse Violet 1; C.I. basic red 1, same 2, same 9, same 12, same 13, same 14, same 15, same 17, same 18, same 22, same 23, same 24, same 27, same 29, same 32, Same 34, same 35, same 36, same 37, same 38, same 39, same 40; C.I. basic purple 1, same 3, same 7, same 10, same 14, same 15, same 21, same 25, same 26 , Same as 27, 28, etc. In addition, examples of magenta-based colorants include C.I. Pigment Red 1, Tong 2, Tong 3, Tong 4, Tong 5, Tong 6, Tong 7, Tong 8, Tong 9, Tong 10, Tong 11, Tong 12, Same 13, Same 14, Same 15, Same 16, Same 17, Same 18, Same 19, Same 21, Same 22, Same 23, Same 30, Same 31, Same 32, Same 37, Same 38, Same 39, Same 40 , Same 41, Same 42, Same 48:1, Same 48:2, Same 48:3, Same 48:4, Same 49, Same 49:1, Same 50, Same 51, Same 52, Same 52:2, Same 53:1, same 54, same 55, same 56, same 57:1, same 58, same 60, same 60:1, same 63, same 63:1, same 63:2, same 64, same 64:1, Same 67, Same 68, Same 81, Same 83, Same 87, Same 88, Same 89, Same 90, Same 92, Same 101, Same 104, Same 105, Same 106, Same 108, Same 112, Same 114, Same 122 , Same 123, Same 139, Same 144, Same 146, Same 147, Same 149, Same 150, Same 151, Same 163, Same 166, Same 168, Same 170, Same 171, Same 172, Same 175, Same 176, Same 177, same 178, same 179, same 184, same 185, same 187, same 190, same 193, same 202, same 206, same 207, same 209, same 219, same 222, same 224, same 238, same 245; C.I. Pigment Purple 3, Same 9, Same 19, Same 23, Same 31, Same 32, Same 33, Same 36, Same 38, Same 43, Same 50; C.I. Vat Red 1, Same 2, Same 10, Same 13, Same 15, the same as 23, the same as 29, the same as 35, etc.

Examples of yellow coloring agents include: C.I. Solvent Yellow 19, TO 44, TO 77, TO 79, TO 81, TO 82, TO 93, TO 98, TO 103, TO 104, TO 112, TO 162; C.I. Pigments Orange 31, same 43; C.I. Pigment Yellow 1, same 2, same 3, same 4, same 5, same 6, same 7, same 10, same 11, same 12, same 13, same 14, same 15, same 16, Same 17, Same 23, Same 24, Same 34, Same 35, Same 37, Same 42, Same 53, Same 55, Same 65, Same 73, Same 74, Same 75, Same 81, Same 83, Same 93, Same 94 , Same 95, Same 97, Same 98, Same 100, Same 101, Same 104, Same 108, Same 109, Same 110, Same 113, Same 114, Same 116, Same 117, Same 120, Same 128, Same 129, Same 133, same 138, same 139, same 147, same 150, same 151, same 153, same 154, same 155, same 156, same 167, same 172, same 173, same 180, same 185, same 195; 1. Same as 3, same as 20, etc.

Among these colorants, visible light absorbing dyes are preferred. When a visible light absorbing dye is used as the colorant, air bubbles are less likely to be generated between the back adhesive film and the dicing tape when laser marking is carried out with a dicing tape, and the appearance after laser marking is excellent. The aforementioned visible light absorbing dye is preferably a dye having a maximum value of absorbance in the wavelength region of 350 to 700 nm. Examples of the visible light absorbing dyes include anthraquinone dyes, pyrene dyes, perylene dyes, quinoline dyes, quinacridone dyes, benzimidazolone dyes, azo dyes, and isoindole dyes. Phenone-based dyes, isoindoline-based dyes, dioxane-based dyes, phthalocyanine-based dyes, etc. The above-mentioned visible light absorbing dyes may be used only by one kind, or two or more kinds may be used.

The content of the coloring agent is preferably at least 0.05% by mass, more preferably at least 0.1% by mass, and still more preferably at least 0.15% by mass, based on the total mass of the back adhesive film of the present invention. The above content ratio is preferably at most 8% by mass, more preferably at most 6% by mass, further preferably at most 4% by mass. When the said content rate is 0.05 mass % or more, the total light transmittance in the wavelength 500 nm of the back adhesive film of this invention tends to become low. Also, good printing properties (printed characters with good visibility) can be obtained. When the above-mentioned content ratio is 8% by mass or less, air bubbles are less likely to be generated between the back adhesive film and the dicing tape when laser marking is performed with the dicing tape attached.

The back adhesive film of the present invention preferably contains an infrared absorber having a maximum absorption wavelength of 850 nm or higher in the wavelength range of 500 to 2000 nm. The said infrared absorber may use only 1 type, and may use 2 or more types.

Examples of the infrared absorbing agent include pigments (infrared absorbing pigments) and dyes (infrared absorbing dyes) having a maximum absorption wavelength of 850 nm or longer in the wavelength region of 500 to 2000 nm. Examples of the infrared absorbing pigments include: indium tin oxide, antimony tin oxide, zinc oxide, lead white, lithopone, titanium oxide, chromium oxide, iron oxide, aluminum oxide, precipitated barium sulfate, barite powder, lead Dan, iron oxide red, yellow lead, zinc yellow (1 type of zinc yellow, 2 types of zinc yellow), ultramarine blue, Prussian blue (ferrocyanide), zirconium gray, yellow, chrome titanium yellow, chrome green, peacock Green, Victoria Green, Iron Blue, Vanadium Zirconium Blue, Chromium Tin Powder, Pottery Red, Salmon Meal, Titanium Black, Tungsten Compounds, Metal Borides, etc. In addition, black pigments such as metal oxides and metal nitrides containing metal elements such as Co, Cr, Cu, Mn, Ru, Fe, Ni, Sn, Ti, Ag, Al, etc. are exemplified. The above-mentioned infrared absorbing pigments may be used alone or in combination of two or more.

Examples of the infrared absorbing dyes include cyanine dyes, phthalocyanine dyes, naphtholcyanine dyes, iminium dyes, ammonium dyes, quinolinium dyes, pyrylium dyes, Ni complex dyes, and pyrrolopyrrole dyes. Pigments, copper complexes, quaterrylene dyes, azo dyes, anthraquinone dyes, diimonium dyes, squarylium dyes, porphyrin dyes, and the like. The above-mentioned infrared absorbing dyes may be used alone or in combination of two or more.

As the above-mentioned infrared absorbing agent having a maximum absorption wavelength of 850 nm or more in the wavelength range of 500 to 2000 nm, among them, the rear adhesive film of the present invention is preferable from the viewpoint of improving the infrared shielding property and reducing the average transmittance. It is an infrared absorbing pigment. Also, the average particle diameter of the infrared absorbing pigment is preferably at least 10 nm, more preferably at least 20 nm, and still more preferably at least 40 nm. If the average particle diameter of the above-mentioned infrared absorbing pigment is 10 nm or more, infrared rays can be absorbed more efficiently, and the infrared shielding property of the back adhesive film of the present invention is further improved. Furthermore, the above-mentioned average particle diameter is preferably 10 μm or less from the viewpoint of suppressing diffuse reflection of visible light for laser marking.

The content of the infrared absorber is preferably at least 0.2% by mass, more preferably at least 0.5% by mass, and still more preferably at least 1% by mass, based on the total mass of the back adhesive film of the present invention. The above content ratio is preferably at most 30% by mass, more preferably at most 20% by mass, further preferably at most 15% by mass, particularly preferably at most 10% by mass. There exists a tendency for the total light transmittance in the wavelength 1300nm of the back adhesive film of this invention to become low that the said content rate is 0.5 mass % or more. When the said content rate is 30 mass % or less, the compounding quantity can be suppressed and it becomes low cost. Also, in the case of an infrared absorbing pigment, roughness of the film surface can be suppressed.

The back adhesive film of this invention may contain other components as needed. As said other component, a flame retardant, a silane coupling agent, an ion scavenger, etc. are mentioned, for example. Examples of the flame retardant include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and composite metal hydroxides, phosphazene-based compounds, dihydrogen trioxide, etc. Antimony, antimony pentoxide, brominated epoxy resin, etc. Examples of the silane coupling agent include: β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyl Methyldiethoxysilane, etc. Examples of the above-mentioned ion-scavenging agent include aluminum magnesium carbonates, bismuth hydroxide, hydrous antimony oxide (such as "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate of a specific structure (such as Toagosei Co., Ltd. "IXE-100" manufactured by Kyowa Chemical Industry Co., Ltd.), magnesium silicate (such as "KYOWAAD 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (such as "KYOWAAD 700" manufactured by Kyowa Chemical Industry Co., Ltd.), etc. Compounds that can form complexes with metal ions can also be used as ion traps. As such a compound, a triazole type compound, a tetrazole type compound, and a bipyridine type compound are mentioned, for example. Among these, triazole-based compounds are preferred from the viewpoint of stability of complexes formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzene Triazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole Azole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylbenzene Base) benzotriazole, 2-(2-hydroxy-5-tertoctylphenyl) benzotriazole, 6-(2-benzotriazolyl)-4-tertoctyl-6'- tertiary butyl-4'-methyl-2,2'-methylene bisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1-(1,2-dicarboxydi Ethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-tertiary pentyl-6-{(H-benzotriazole-1- base) methyl}phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, 3-(2H-benzotriazol-2-yl)-5-(1 ,1-Dimethylethyl)-4-hydroxyl, 3-[3-tert-butyl-4-hydroxyl-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propane octyl acetate, 2-ethylhexyl-3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)propyl]propionate, 2- (2H-Benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2- (2H-Benzotriazol-2-yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-th Trioctylphenyl)-benzotriazole, 2-(3-tert-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3 ,5-di-tert-pentylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chloro-benzotriazole, 2-[ 2-Hydroxy-3,5-bis(1,1-dimethylbenzyl)propyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazole -2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)propane Base]-2H-benzotriazole, 3-[3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxypropyl]propionic acid methyl ester, etc. In addition, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds, and polyphenol compounds can also be used as ion traps. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthracenol, tannin, gallic acid, methyl gallate, gallol, and the like. The above-mentioned other components may be used alone or in combination of two or more.

In the case where the back adhesive film of the present invention has a multi-layer structure, it may also have a multi-layer structure, and the multi-layer structure includes: an adhesive layer having a bonding surface to the back of the workpiece; shot marker layer. The adhesive layer can also be thermosetting so that it can be bonded to the back of the workpiece, and then it can be thermally hardened and adhered to the back of the workpiece for protection. Furthermore, when the adhesive layer is non-thermosetting and does not have thermosetting properties, the adhesive layer can be adhered to the back of the workpiece to protect it by utilizing the adhesiveness (wettability) or chemical bonding of the interface such as pressure sensitivity. . The laser marking layer is used for laser marking the surface of the semiconductor device during the manufacturing process. Furthermore, the back adhesive film having such a laminated structure may adopt a laminated structure in which the adhesive layer is thermally cured by heat treatment at 120° C. for 2 hours, while the laser marking layer is substantially not thermally cured. In addition, in the back adhesive film of the present invention, the layer that is not substantially thermally cured by heat treatment at 120° C. for 2 hours includes a cured thermosetting layer. The adhesive layer and the laser marking layer may each have a single-layer structure or a multi-layer structure.

The above-mentioned laser marking layer is preferably a thermosetting type layer (thermally cured layer) in which a thermosetting component is thermally cured. The laser marking layer is formed by hardening the thermosetting resin composition layer formed from the resin composition forming the laser marking layer.

When the back adhesive film of the present invention has a multilayer structure having an adhesive layer and a laser marking layer, the ratio of the thickness of the laser marking layer to the thickness of the adhesive layer is preferably 1 or more, more preferably 1.5 or more, Furthermore, it is more preferably 2 or more. The above ratio is, for example, 10 or less.

The thickness of the back adhesive film of the present invention is, for example, 2-200 μm, preferably 4-160 μm, more preferably 6-100 μm, further preferably 10-80 μm. When the above-mentioned thickness is 2 μm or more, the back surface of the workpiece can be protected more firmly. If the above-mentioned thickness is 200 μm or less, it is possible to make thinner workpieces after back bonding.

One embodiment in the case where the back adhesive film of the present invention has a multilayer structure is shown in FIG. 1 . As shown in FIG. 1 , the back adhesive film 10 of the present invention is arranged on the separator 30 . The back adhesive film 10 of the present invention has a multi-layer structure including an adhesive layer 11 and a laser marking layer 12 , and the laser marking layer 12 is peelably bonded to the isolation film 30 . Furthermore, in FIG. 1 , the adhesive layer 11 and the laser marking layer 12 may also have a reverse positional relationship (that is, the adhesive layer 11 is peelably attached to the isolation film 30 ). When the adhesive layer 11 and the laser marking layer 12 are in the positional relationship shown in FIG. 1 , the back adhesive film 10 of the present invention can be bonded to the back of the workpiece and then thermally cured for use. On the other hand, when the positional relationship between the adhesive layer 11 and the laser marking layer 12 is opposite to that shown in FIG. 1 , it can be preferably used to produce the following dicing tape-integrated back adhesive film.

One embodiment in the case where the back adhesive film of the present invention has a single-layer structure is shown in FIG. 2 . As shown in FIG. 2 , the back adhesive film 10 of the present invention is arranged on the isolation film 30 . The back adhesive film 10 of the present invention can be bonded to the back of the workpiece and then thermally cured for use.

[Dicing Tape Integrated Type Semiconductor Back Adhesive Film] The back adhesive film of the present invention may have the form of the back adhesive film of the present invention having a laminated structure including a base material and an adhesive layer, and the above-mentioned adhesive layer adhered to the dicing tape in a detachable manner, that is, as Dicing tape-integrated semiconductor backside adhesive film (sometimes called "dicing tape-integrated backside adhesive film") is used. In addition, the above-mentioned dicing tape-integrated back adhesive film may be referred to as "the dicing tape-integrated back adhesive film of the present invention". When the back adhesive film of the present invention is used as a dicing tape-integrated back adhesive film, it is possible to make wrinkles less likely to occur when it is attached to a substrate.

One embodiment of the dicing tape-integrated back adhesive film of the present invention will be described with reference to FIG. 3 . The dicing tape-integrated back adhesive film 1 shown in FIG. 3 uses the back adhesive film 10 of the present invention shown in FIG. 1 and is disposed on a separator 30 . The dicing tape integrated back adhesive film 1 can be used in the process of obtaining a semiconductor wafer with a film equivalent to the size of the wafer for forming the back adhesive film of the semiconductor wafer. Laminated structure of adhesive tape 20.

(Substrate) The base material in the dicing tape is an element that functions as a support in the dicing tape or the back adhesive film integrated with the dicing tape. As a base material, a plastic base material (especially a plastic film) is mentioned, for example. The aforementioned substrate may be a single layer, or a laminate of the same or different substrates.

Examples of the resin constituting the plastic substrate include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block Copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid Polyolefin resins such as ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer; polyurethane; polyethylene terephthalate (PET), polyethylene naphthalene Polyesters such as ethylene formate and polybutylene terephthalate (PBT); polycarbonate; polyimide; polyetheretherketone; polyetherimide; aromatic polyamide, fully aromatic Polyamide such as polyamide; polyphenylene sulfide; fluorine resin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; silicone resin, etc. From the viewpoint of ensuring good heat shrinkability in the base material, it is easy to maintain the separation distance of the wafers by using the dicing tape or the local heat shrinkage of the base material in the expansion step for increasing the separation distance between the semiconductor wafers after dicing, The substrate preferably contains ethylene-vinyl acetate copolymer or polyvinyl chloride as a main component. In addition, the main component of a base material is set as the component which accounts for the largest mass ratio among constituent components. The above-mentioned resins may be used alone or in combination of two or more. When the adhesive layer is a radiation-curable adhesive layer as described below, the base material preferably has radiation transparency.

When the base material is a plastic film, the plastic film may be non-aligned, or may be aligned in at least one direction (uniaxial direction, biaxial direction, etc.). In the case of alignment in at least one direction, the plastic film can realize thermal shrinkage in the at least one direction. In order to make the base material and the dicing tape have isotropic thermal shrinkage, the base material is preferably a biaxially oriented film. Furthermore, the plastic film aligned in at least one direction can be obtained by stretching (uniaxial stretching, biaxial stretching, etc.) a non-stretched plastic film in the at least one direction. The base material and the dicing tape preferably have a heat shrinkage rate of 1-30%, more preferably 2-25%, and even more preferably in a heat treatment test conducted at a heating temperature of 100°C and a heating time of 60 seconds. 3-20%, especially preferably 5-20%. The thermal shrinkage rate is preferably a thermal shrinkage rate in at least one of the MD direction and the TD direction.

The adhesive layer side surface of the base material is aimed at improving the adhesion and retention with the adhesive layer, for example, corona discharge treatment, plasma treatment, sand matting treatment, ozone exposure treatment, flame exposure treatment, etc. Physical treatment such as high-voltage electric shock exposure treatment and ionizing radiation treatment; chemical treatment such as chromic acid treatment; surface treatment such as easy adhesion treatment using coating agent (primer). In addition, in order to impart antistatic ability, a conductive vapor-deposited layer containing metals, alloys, and oxides thereof may be provided on the surface of the substrate. The surface treatment for improving the adhesion is preferably performed on the entire surface of the substrate on the side of the adhesive layer.

The thickness of the substrate is preferably at least 40 μm, more preferably at least 50 μm, from the viewpoint of securing the strength of the substrate used as a support in dicing tapes and dicing tape-integrated back adhesive films. , and more preferably 55 μm or more, especially preferably 60 μm or more. Also, from the viewpoint of achieving moderate flexibility in the dicing tape and the dicing tape-integrated back adhesive film, the thickness of the base material is preferably 200 μm or less, more preferably 180 μm or less, further preferably 150 μm the following.

(adhesive layer) The adhesive layer in the dicing tape may be an adhesive layer (adhesive layer capable of reducing adhesive force) that can deliberately reduce the adhesive force by external action during use of the dicing tape-integrated back adhesive film, or may be In order to use the adhesive layer (adhesive layer with non-decreasing adhesive force) whose adhesive force will not be reduced substantially or at all due to external effects during the use of the dicing tape-integrated back adhesive film, the dicing tape-integrated back can be used The method and conditions for singulation of the workpiece to be singulated with the adhesive film are appropriately selected. The adhesive layer may have a single-layer structure or a multi-layer structure.

When the adhesive layer is an adhesive layer that can reduce the adhesive force, the adhesive layer can show the state and display of relatively high adhesive force during the manufacturing process or use process of the dicing tape-integrated back adhesive film Use it separately in the state of relatively low adhesion. For example, when the adhesive layer of the dicing tape is attached to the back adhesive film in the production process of the dicing tape-integrated back adhesive film, or when the dicing tape-integrated back adhesive film is used in the cutting step, the adhesive layer can be used to show relative On the other hand, in the subsequent pick-up step of picking up the semiconductor wafer from the dicing tape integrated back adhesive film of the dicing tape integrated type, it can be used Easy to pick up by reducing the adhesive force of the adhesive layer.

As an adhesive agent which forms such an adhesive force-reducible adhesive layer, a radiation curable adhesive agent, a heating foam type adhesive agent etc. are mentioned, for example. As the adhesive for forming the adhesive layer capable of reducing the adhesive force, one type of adhesive may be used, or two or more types of adhesive may be used.

As the above-mentioned radiation-curable adhesive, for example, an adhesive that is cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used, and it is particularly preferable to use an adhesive that is cured by irradiation with ultraviolet rays. Type of adhesive (ultraviolet curable adhesive).

Examples of the aforementioned radiation-curable adhesive include: addition of a radiation-polymerizable monomer component or an oligomer component containing a base polymer such as an acrylic polymer and a functional group such as a carbon-carbon double bond having radiation polymerizability Type radiation hardening adhesive.

The above-mentioned acrylic polymer is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth)acryl group in a molecule) as a structural unit of the polymer. The above-mentioned acrylic polymer is preferably a polymer containing the most structural units derived from (meth)acrylate in terms of mass ratio. In addition, the acrylic polymer may use only 1 type, and may use 2 or more types.

As said (meth)acrylate, the hydrocarbon group containing (meth)acrylate which may have an alkoxy group is mentioned, for example. Examples of the hydrocarbon group-containing (meth)acrylate that may have an alkoxy group include: the hydrocarbon group-containing (meth)acrylic acid that may have an alkoxy group as exemplified as the structural unit of the acrylic resin contained in the above-mentioned back adhesive film ester. The above-mentioned hydrocarbon group-containing (meth)acrylates which may have an alkoxy group may be used alone or in combination of two or more. As the above-mentioned hydrocarbon group-containing (meth)acrylate which may have an alkoxy group, 2-ethylhexyl acrylate and lauryl acrylate are preferable. In order to make the basic characteristics such as the adhesiveness brought by the hydrocarbon group-containing (meth)acrylate that may have an alkoxy group appear properly in the adhesive layer, all the monomer components used to form the acrylic polymer may have The proportion of the hydrocarbon group-containing (meth)acrylate of the alkoxy group is preferably at least 40% by mass, more preferably at least 60% by mass.

The above-mentioned acrylic polymer may contain structural units derived from other monomer components copolymerizable with the above-mentioned hydrocarbon group-containing (meth)acrylate that may have an alkoxy group for the purpose of improving cohesion, heat resistance, etc. As said other monomer component, the other monomer illustrated as a structural unit of the acrylic resin contained in the said back adhesive film is mentioned. The above-mentioned other monomer components may be used only by one type, or two or more types may be used. In order to make the basic characteristics such as adhesiveness brought by the hydrocarbon group-containing (meth)acrylate that may have an alkoxy group appear properly in the adhesive layer, the above-mentioned other components in all the monomer components used to form the acrylic polymer The total ratio of monomer components is preferably at most 60% by mass, more preferably at most 40% by mass.

The above-mentioned acrylic polymer may contain a structural unit derived from a polyfunctional monomer copolymerizable with a monomer component forming an acrylic polymer in order to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, Pentaerythritol Di(meth)acrylate, Pentaerythritol Di(meth)acrylate, Trimethylolpropane Tri(meth)acrylate, Pentaerythritol Tri(meth)acrylate, Dipentaerythritol Hexa(meth)acrylate Ester, epoxy (meth)acrylate (for example, polyglycidyl (meth)acrylate), polyester (meth)acrylate, urethane (meth)acrylate, etc. Acryl group and monomers of other reactive functional groups, etc. The said polyfunctional monomer may use only 1 type, and may use 2 or more types. In order to make the basic properties such as the adhesiveness brought by the hydrocarbon group-containing (meth)acrylate that may have an alkoxy group appear properly in the adhesive layer, the above-mentioned polysaccharides in all the monomer components used to form the acrylic polymer The proportion of the functional monomer is preferably at most 40% by mass, more preferably at most 30% by mass.

The acrylic polymer is obtained by polymerizing monomer components containing one or more acrylic monomers. As a polymerization method, solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization etc. are mentioned.

Acrylic polymers can be obtained by polymerization using the raw material monomers used to form them. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, suspension polymerization etc. are mentioned, for example. The mass average molecular weight of the acrylic polymer is preferably at least 100,000, more preferably 200,000 to 3 million. When the mass average molecular weight is 100,000 or more, the adhesive layer tends to contain less low-molecular-weight substances, and contamination of the back adhesive film, semiconductor wafer, and the like can be further suppressed.

The adhesive layer or the adhesive forming the adhesive layer may also contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be cross-linked to further reduce low molecular weight substances in the adhesive layer. In addition, the mass average molecular weight of the acrylic polymer can be increased. As said crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. When using a crosslinking agent, its usage-amount is preferably about 5 mass parts or less with respect to 100 mass parts of base polymers, More preferably, it is 0.1-5 mass parts.

Examples of the aforementioned radiation-polymerizable monomer components include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra( Meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and the like. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and the molecular weight is preferably It is about 100 to 30,000. The content of the radiation-polymerizable monomer component and oligomer component in the radiation-curable adhesive forming the adhesive layer is, for example, 5 to 500 parts by mass, preferably 40 to 100 parts by mass relative to 100 parts by mass of the above-mentioned base polymer. About 150 parts by mass. In addition, as an additive type radiation curable adhesive, for example, those disclosed in Japanese Patent Laid-Open No. Sho 60-196956 can also be used.

Examples of the above-mentioned radiation-curable adhesives include: internal polymers containing functional groups such as radiation-polymerizable carbon-carbon double bonds in the polymer side chain or in the polymer main chain, and at the end of the polymer main chain. Type radiation hardening adhesive. Use of such an intrinsic radiation-curable adhesive tends to suppress unintentional temporal changes in adhesive properties caused by migration of low molecular weight components within the formed adhesive layer.

An acrylic polymer is preferable as the base polymer contained in the above-mentioned intrinsic radiation-curable adhesive. As a method of introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a method of polymerizing (copolymerizing) a raw material monomer containing a monomer component having a first functional group to obtain an acrylic polymer After compounding, the compound having the second functional group that can react with the first functional group and the radiation-polymerizable carbon-carbon double bond is condensed with the radiation-polymerizable acrylic polymer that maintains the carbon-carbon double bond. or addition reactions.

Examples of combinations of the first functional group and the second functional group include carboxyl and epoxy, epoxy and carboxyl, carboxyl and aziridinyl, aziridinyl and carboxyl, hydroxyl and isocyanic acid group, isocyanate group and hydroxyl group, etc. Among them, a combination of a hydroxyl group and an isocyanato group, and a combination of an isocyanato group and a hydroxyl group are preferable from the viewpoint of easiness of following the reaction. Among them, in terms of the technical difficulty of producing a polymer having a highly reactive isocyanate group, and the ease of production and acquisition of an acrylic polymer having a hydroxyl group, the above-mentioned The first functional group is a hydroxyl group, and the second functional group is a combination of an isocyanate group. As a compound having an isocyanate group and a radiation-polymerizable carbon-carbon double bond, that is, an isocyanate compound containing a radiation-polymerizable unsaturated functional group, for example, methacryl isocyanate, isocyanate 2 -Methacryloxyethyl ester, m-isopropenyl-α,α-dimethylbenzyl isocyanate and the like. Moreover, examples of the acrylic polymer having a hydroxyl group include the above-mentioned monomers containing a hydroxyl group, or those containing ethers derived from 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, etc. It is a structural unit of a compound.

系化合物、樟腦醌、鹵代酮、醯基膦氧化物、醯基膦酸鹽等。作為上述α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等。作為上述苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙烷-1-酮等。作為上述安息香醚系化合物，例如可列舉：安息香乙醚、安息香異丙醚、大茴香偶姻甲醚等。作為上述縮酮系化合物，例如可列舉苯偶醯二甲基縮酮等。作為上述芳香族磺醯氯系化合物，例如可列舉2-萘磺醯氯等。作為上述光活性肟系化合物，例如可列舉1-苯基-1,2-丙二酮-2-(O-乙氧羰基)肟等。作為上述二苯甲酮系化合物，例如可列舉二苯甲酮、苯甲醯苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等。作為上述9-氧硫𠮿

系化合物，例如可列舉：9-氧硫𠮿

、2-氯9-氧硫𠮿

、2-甲基9-氧硫𠮿

、2,4-二甲基9-氧硫𠮿

、異丙基9-氧硫𠮿

、2,4-二氯9-氧硫𠮿

、2,4-二乙基9-氧硫𠮿

、2,4-二異丙基9-氧硫𠮿

等。放射線硬化性黏著劑中之光聚合起始劑之含量相對於基礎聚合物100質量份，例如為0.05～20質量份。The above radiation curable adhesive preferably contains a photopolymerization initiator. Examples of the above-mentioned photopolymerization initiators include α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, Benzophenone series compounds, 9-oxosulfur

Compounds, camphorquinones, halogenated ketones, acyl phosphine oxides, acyl phosphonates, etc. Examples of the α-ketol-based compounds include: 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylbenzene Ethanone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenylketone, etc. Examples of the above-mentioned acetophenone-based compounds include: methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2- Methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropan-1-one, etc. Examples of the benzoin ether-based compound include benzoin diethyl ether, benzoin isopropyl ether, anisoin methyl ether, and the like. As said ketal compound, a benzoyl dimethyl ketal etc. are mentioned, for example. As said aromatic sulfonyl chloride type compound, 2-naphthalenesulfonyl chloride etc. are mentioned, for example. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime and the like. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, 3,3'-dimethyl-4-methoxybenzophenone, and the like. As the above-mentioned 9-oxosulfur

series compounds, such as: 9-oxosulfur

, 2-Chloro9-oxosulfur 𠮿

, 2-Methyl 9-oxosulfur 𠮿

, 2,4-Dimethyl 9-oxosulfur 𠮿

, Isopropyl 9-oxosulfur

, 2,4-dichloro-9-oxosulfur 𠮿

, 2,4-Diethyl 9-oxosulfur 𠮿

, 2,4-Diisopropyl 9-oxosulfur 𠮿

wait. Content of the photopolymerization initiator in a radiation-curable adhesive is 0.05-20 mass parts, for example with respect to 100 mass parts of base polymers.

The heat-foaming adhesive mentioned above is an adhesive containing components (foaming agent, heat-expandable microspheres, etc.) that foam or expand by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. As said inorganic foaming agent, ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium sulfite, sodium borohydride, azides, etc. are mentioned, for example. Examples of the above-mentioned organic foaming agents include: chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodiformamide, barium azodicarboxylate, etc. Azo compounds; p-toluenesulfonylhydrazine, diphenylsulfonyl-3,3'-disulfonylhydrazine, 4,4'-oxybis(benzenesulfonylhydrazine), allylbis(sulfonylhydrazine) Other hydrazine compounds; p-tolylsulfonyl semicarbazide, 4,4'-oxybis(benzenesulfonyl semicarbazide) and other semicarbazide compounds; 5-morpholino-1,2,3,4- Triazole compounds such as thiatriazole; N,N'-dinitrosopentamethylenetetramine, N,N'-dimethyl-N,N'-dinitrosoterephthalamide, etc. N-nitroso compounds, etc. Examples of the thermally expandable microspheres include microspheres in which a substance that is easily vaporized and expanded by heating is enclosed in a shell. Examples of the substance that is easily vaporized and expanded by heating include isobutane, propane, pentane, and the like. Heat-expandable microspheres can be produced by encapsulating a substance that is easily vaporized and expanded by heating in a shell-forming substance by the coacervation method or the interfacial polymerization method. As the above-mentioned shell-forming substance, a substance exhibiting heat-fusibility, or a substance rupturable by thermal expansion of an encapsulating substance can be used. Examples of such substances include: vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polyvinyl chloride, etc. .

As said adhesive force non-reducing type adhesive layer, a pressure sensitive type adhesive layer is mentioned, for example. Furthermore, the pressure-sensitive adhesive layer includes an adhesive layer capable of reducing adhesive force, which has a certain adhesive force even though the adhesive layer formed of the above-mentioned radiation-curable adhesive is hardened by radiation irradiation in advance. The form of the adhesive layer. As the adhesive for forming the non-adhesion-reducing adhesive layer, one type of adhesive may be used, or two or more types of adhesive may be used. In addition, the whole of the adhesive layer may be a non-adhesive force-decreasing type adhesive layer, and a part may be an adhesive force non-decreasing type adhesive layer. For example, when the adhesive layer has a single-layer structure, the entire adhesive layer may be a non-adhesive adhesive layer, or a specific part of the adhesive layer (for example, the bonding target area of the cutting frame, and The area outside the central area) is a non-adhesive adhesive layer, and other parts (for example, the split body of the semiconductor wafer or the bonding target area of the semiconductor wafer, that is, the central area) is an adhesive that can reduce the adhesive force layer. Also, when the adhesive layer has a laminated structure, all the adhesive layers in the laminated structure may be non-adhesive adhesive layers, or a part of the adhesive layers in the laminated structure may be non-adhesive adhesive layers. layer.

An adhesive layer (radiation-irradiated radiation-curable adhesive layer) in a form in which an adhesive layer formed of a radiation-curable adhesive (radiation-unirradiated radiation-curable adhesive layer) is cured in advance by irradiation with radiation The adhesive force was reduced by radiation irradiation, and the adhesiveness derived from the contained polymer component was also shown to be able to exhibit the minimum adhesive force required for the adhesive layer of the dicing tape in the dicing step and the like. In the case of using a radiation-cured adhesive layer irradiated with radiation, the entire adhesive layer may be a radiation-irradiated or radiation-hardened adhesive layer in the direction of the surface expansion of the adhesive layer, or a part of the adhesive layer It is a radiation-curable adhesive layer that has been irradiated with radiation and the other part is a radiation-hardenable adhesive layer that has not been irradiated. Furthermore, in this specification, the so-called "radiation-curable adhesive layer" refers to an adhesive layer formed of a radiation-curable adhesive, including radiation-curable non-irradiated radiation-curable adhesive layers and the Both the radiation-cured adhesive layer and the radiation-cured adhesive layer after the adhesive layer is cured by irradiation with radiation.

As the adhesive for forming the above-mentioned pressure-sensitive adhesive layer, known or conventional pressure-sensitive adhesives can be used, and acrylic adhesives or rubber-based adhesives using an acrylic polymer as a base polymer can be preferably used. When the adhesive layer contains an acrylic polymer as the pressure-sensitive adhesive, the acrylic polymer preferably contains a structural unit derived from (meth)acrylate as the most structural unit in terms of mass ratio. things. As the above-mentioned acrylic polymer, for example, the acrylic polymer described as the acrylic polymer that can be contained in the above-mentioned additive type radiation-curable adhesive can be used.

In addition to the above-mentioned components, the adhesive layer or the adhesive forming the adhesive layer can also be formulated with known or commonly used adhesive layer components such as crosslinking accelerators, adhesion imparting agents, anti-aging agents, colorants (pigments, dyes, etc.) Additives used. As said coloring agent, the compound colored by radiation irradiation is mentioned, for example. When a compound colored by radiation irradiation is contained, only the part irradiated with radiation can be colored. The above-mentioned compounds colored by radiation irradiation are colorless or light-colored compounds before radiation irradiation, but are colored compounds by radiation irradiation, for example, leuco dyes and the like are mentioned. The usage-amount of the said compound colored by radiation irradiation is not specifically limited, It can select suitably.

The thickness of the adhesive layer is not particularly limited. When the adhesive layer is an adhesive layer formed of a radiation-curable adhesive, the balance of the adhesive force to the back adhesive film before and after radiation curing of the adhesive layer is obtained. From the standpoint of this, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 3 to 25 μm.

The back adhesive film of the present invention and the dicing tape-integrated back adhesive film of the present invention may have a release film on the surface of the back adhesive film. Specifically, each of the back adhesive film of the present invention or each dicing tape-integrated back adhesive film may be in the form of a sheet with a separator, or the separator may be in the form of a strip and a plurality of back adhesive films may be disposed thereon. Adhesive film or a plurality of dicing tape-integrated back adhesive films, and the separator is wound into a roll form. The separator is an element for covering the back adhesive film of the present invention for protection, and is peeled off from the sheet when the back adhesive film of the present invention or the dicing tape-integrated back adhesive film of the present invention is used. Examples of separators include: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, surface coating with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. plastic film or paper etc.

The thickness of the isolation film is, for example, 10-200 μm, preferably 15-150 μm, more preferably 20-100 μm. When the above-mentioned thickness is 10 μm or more, it is difficult to break due to incisions during processing of the separator. When the thickness is 200 μm or less, the dicing tape-integrated back adhesive film can be more easily peeled off from the separator when bonding to a substrate and a frame.

[Manufacturing method of back adhesive film] The back adhesive film 10 which is one embodiment of the back adhesive film of this invention is manufactured as follows, for example.

Regarding the back adhesive film 10 shown in FIG. 1 , first, the adhesive layer 11 and the laser marking layer 12 are produced separately. The adhesive layer 11 can be formed by applying a resin composition for forming the adhesive layer 11 (adhesive composition) on the separator to form a resin composition layer, and then desolventizing or hardening the resin composition by heating. layer solidified. In the preparation of the adhesive layer 11 , the heating temperature is, for example, 90-150° C., and the heating time is, for example, 1-2 minutes. As a coating method of a resin composition, roll coating, screen coating, gravure coating etc. are mentioned, for example. On the other hand, the laser marking layer 12 can be made by applying the resin composition for forming the laser marking layer 12 on the separator to form a resin composition layer, and then desolventizing or curing the resin composition by heating. layer solidified. In manufacturing the laser marking layer 12, the heating temperature is, for example, 90-160° C., and the heating time is, for example, 2-4 minutes. The adhesive layer 11 and the laser marking layer 12 can be produced separately in the form of an isolation film. Then, the exposed surfaces of the adhesive layer 11 and the laser marking layer 12 are bonded to each other, and then die-cut in such a manner that the planar projected shape and planar projected area become the target, and the adhesive layer 11 and the laser marking layer 12 are produced. The back adhesive film 10 of the laminated structure of the marking layer 12 .

[Manufacturing method of dicing tape integrated back adhesive film] The dicing tape-integrated back adhesive film 1 which is one embodiment of the dicing tape-integrated back adhesive film of the present invention is produced, for example, as follows.

The dicing tape 20 of the dicing tape-integrated back adhesive film 1 shown in FIG. 3 can be produced by disposing an adhesive layer 22 on a prepared substrate 21 . For example, the base material 21 made of resin can be formed into a film by a known or usual film-forming method. Examples of the above-mentioned film-making method include: calender film-making method, casting method in organic solvent, inflation extrusion method in a closed system, T-die extrusion method, co-extrusion method, dry lamination method, etc. . With respect to the base material 21, surface treatment is performed as needed. In forming the adhesive layer 22 , for example, after preparing an adhesive composition for forming the adhesive layer, first, the composition is applied on the substrate 21 or on the separator to form an adhesive composition layer. As a coating method of an adhesive composition, roll coating, screen coating, gravure coating etc. are mentioned, for example. Next, in this adhesive composition layer, desolventization is performed as needed by heating, and crosslinking reaction is produced as needed. The heating temperature is, for example, 80 to 150° C., and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 22 is formed on the separator, the adhesive layer 22 with the separator is bonded to the substrate 21, and then the target planar projection shape (for example, similar to the back adhesive film 10) The shape of the shape) and the planar projected area are punched, and then the separator is peeled off. Thereby, the dicing tape 20 which has the laminated structure of the base material 21 and the adhesive agent layer 22 was produced.

Next, the laser marking layer 12 side of the back adhesive film 10 obtained above is bonded to the adhesive layer 22 side of the dicing tape 20 . The bonding temperature is, for example, 30 to 50° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm. When the adhesive layer 22 is the aforementioned radiation-curable adhesive layer, the adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or the adhesive layer may be irradiated from the side of the substrate 21 after the bonding. 22 Radiation such as ultraviolet rays is irradiated. Alternatively, in the manufacturing process of the dicing tape-integrated back adhesive film 1, such radiation exposure may not be performed (in this case, the adhesive layer 22 can be hardened by radiation during the use of the dicing tape-integrated back adhesive film 1). ). When the adhesive layer 22 is an ultraviolet curable type, the amount of ultraviolet radiation for curing the adhesive layer 22 is, for example, 50 to 500 mJ/cm ² . In the dicing tape-integrated back adhesive film 1, the area (irradiation area R) where irradiation is performed as an adhesive force reduction treatment for the adhesive layer 22 is, for example, shown in FIG. 3 , where the back adhesive film 10 in the adhesive layer 22 is attached The area excluding its peripheral part within the combined area.

In this manner, for example, the back adhesive film 10 of the present invention shown in FIG. 1 and the dicing tape-integrated back adhesive film 1 shown in FIG. 3 can be produced.

[Manufacturing method of semiconductor device] A semiconductor device can be manufactured using the dicing tape-integrated back adhesive film of the present invention. Specifically, a semiconductor device can be manufactured by a manufacturing method comprising: attaching the back surface of the workpiece to the back adhesive film side (especially the adhesive layer side) of the dicing tape-integrated back adhesive film of the present invention. step (attaching step); and a step of obtaining singulated semiconductor wafers by cutting an object including at least a workpiece (dicing step). Furthermore, FIGS. 4 to 7 show steps in a method of manufacturing a semiconductor device using the dicing tape-integrated back adhesive film 1 shown in FIG. 3 .

(attachment steps) Examples of the workpiece to be attached to the back adhesive film side (especially the adhesive layer side) of the dicing tape-integrated back adhesive film of the present invention in the above-mentioned attaching step include: A sealing body formed by sealing the back and/or side surfaces of each semiconductor wafer, etc. And, for example, as shown in FIG. 4( a ), the semiconductor wafer 40 held by the wafer processing tape T1 is attached to the back adhesive film 10 (especially the adhesive agent) of the present invention which is a dicing tape-integrated back adhesive film 1 . Layer 11). Bumps (not shown) for flip-chip mounting are provided on the surface of the semiconductor wafer 40 . Thereafter, as shown in FIG. 4( b ), the tape T1 for wafer processing is peeled off from the semiconductor wafer 40 .

(Thermohardening step) When the back adhesive film of the present invention or the adhesive layer in the film is thermosetting, it is preferable to have a step of thermosetting the back adhesive film (thermosetting step) after the above-mentioned attaching step. For example, in the above-mentioned thermosetting step, heat treatment for thermosetting the adhesive layer 11 is performed. The heating temperature is preferably from 80 to 200°C, more preferably from 100 to 150°C. The heating time is preferably from 0.5 to 5 hours, more preferably from 1 to 3 hours. Specifically, the heat treatment is performed, for example, at 120° C. for 2 hours. In the thermosetting step, the adhesion force between the back adhesive film 10 of the present invention of the dicing tape-integrated back adhesive film 1 and the semiconductor wafer 40 is improved by the thermo-hardening of the adhesive layer 11 , thereby making the dicing tape-integrated back adhesive The film 1 and the back adhesive film 10 of the present invention have improved fixing and holding power to the semiconductor wafer. In addition, when the back adhesive film of the present invention does not have thermosetting properties, for example, it can be dried for several hours in the range of 50-100° C., whereby the wettability of the back adhesive film interface is improved, and the semiconductor crystal The round fixed holding power is improved.

(Laser marking step) It is preferable that the manufacturing method of the said semiconductor device has the step (laser marking step) of performing laser marking by irradiating laser from the base material side of a dicing tape to the back adhesive film. In the case of performing the above thermal hardening step, the laser marking step is preferably performed after the above thermal hardening step. Specifically, in the laser marking step, for example, the laser marking layer 12 is irradiated with a laser from the side of the substrate 21 of the dicing tape 20 to perform laser marking. By this laser marking step, various information such as character information or graphic information can be printed on each semiconductor wafer. In the laser marking step, laser marking can be efficiently performed on a plurality of semiconductor wafers at one time in a laser marking process. Examples of the laser used in the laser marking step include gas lasers and solid lasers. Examples of gas lasers include carbon dioxide gas lasers (CO ₂ lasers) and excimer lasers. As a solid-state laser, Nd:YAG laser is mentioned, for example.

(cutting step) In the above-mentioned cutting step, for example, as shown in FIG. After being placed on the holder 52 of the cutting device, the cutting process is performed by the cutting blade included in the above-mentioned cutting device. In FIG. 5 , cut sites are schematically indicated by thick solid lines. In the dicing step, the semiconductor wafer is singulated into semiconductor wafers 41, and at the same time, the back adhesive film 10 of the present invention of the dicing tape-integrated back adhesive film 1 is diced into small pieces of film 10'. Thereby, the semiconductor wafer 41 with the film 10', that is, the semiconductor wafer 41 with the film 10' is obtained.

(Radiation irradiation step) The above method of manufacturing a semiconductor device may include a step of irradiating the adhesive layer with radiation from the base material side (radiation irradiation step). In the case where the adhesive layer of the dicing tape is a layer formed by a radiation-curable adhesive, after the above-mentioned dicing step, the adhesive layer may be irradiated with radiation such as ultraviolet rays from the side of the base material instead of the first part of the dicing tape. The above-mentioned radiation exposure during the production process of the body-shaped back adhesive film. The irradiation dose is, for example, 50 to 500 mJ/cm ² . The irradiated area (irradiation area R shown in FIG. 3 ) of the dicing tape-integrated back adhesive film is, for example, other areas in the area where the back adhesive film in the adhesive layer is bonded. The area except the peripheral part.

(pickup steps) The manufacturing method of the above-mentioned semiconductor device preferably has a step of picking up a semiconductor wafer with a film (pickup step). The above-mentioned pick-up step, for example, can also be used as a cleaning step to clean the semiconductor wafer 41 side in the dicing tape 20 of the semiconductor wafer 41 with the attached film 10' by using a cleaning solution such as water; The step of expanding the separation distance between the semiconductor wafers 41 of 10' is performed after the step. For example, as shown in FIG. 6 , the semiconductor wafer 41 with the film 10 ′ is picked up from the dicing tape 20 . For example, in the state where the dicing tape 20 with the dicing frame 51 is held on the holder 52 of the device, for the semiconductor wafer 41 with the film 10' to be picked up, the top of the pick-up mechanism is placed on the lower side of the drawing of the dicing tape 20. The pin member 53 rises and pushes up through the dicing tape 20 , and is sucked and held by the sucking jig 54 . In the pick-up step, the jacking speed of the pin ejecting member 53 is, for example, 1-100 mm/sec, and the jacking amount of the pin ejecting member 53 is, for example, 50-3000 μm.

(Flip Chip Mounting Steps) The manufacturing method of the semiconductor device described above preferably includes a step of flip-chip mounting the semiconductor wafer 41 with a film after the pick-up step (flip-chip step). For example, as shown in FIG. 6 , the semiconductor wafer 41 with the film 10 ′ is flip-chip mounted on the mounting substrate 61 . Examples of the mounting substrate 61 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. By flip-chip mounting, the semiconductor chip 41 is electrically connected to the mounting substrate 61 through the bumps 62 . Specifically, a substrate (electrode pad) (not shown) on the circuit formation surface side of the semiconductor chip 41 is electrically connected to a terminal portion (not shown) on the mounting substrate 61 through bumps 62 . The bump 62 is, for example, a solder bump. In addition, a thermosetting underfill 63 is interposed between the chip 41 and the mounting substrate 61 .

As described above, a semiconductor device can be manufactured using the dicing tape-integrated back adhesive film of the present invention. [Example]

Examples are given below to describe the present invention in more detail, but the present invention is not limited by these examples.

Example 1 Acrylic resin (trade name "Teisanresin SG-P3", manufactured by Nagase Chemical Co., Ltd.) 90 parts by mass, epoxy resin _E1 (trade name "KI-3000-4", Nippon Steel Sumikin Chemical Co., Ltd.) 40 parts by mass, epoxy resin _E2 (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) 60 parts by mass, phenol resin (trade name "MEH7851-SS", manufactured by Meiwa Chemical Co., Ltd. ) 100 parts by mass, silica filler (trade name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatechs Co., Ltd.) 220 parts by mass, visible light absorbing black dye (trade name "OIL BLACK BS", Orient Chemical Industries Co., Ltd.) 5 parts by mass, infrared absorbing pigment (heavy metal oxide colorant, maximum absorption wavelength: 1600 nm, average particle size: 20 nm) 30 parts by mass, and thermosetting catalyst (trade name "Curezol 2PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) 10 parts by mass were added to methyl ethyl ketone and mixed to obtain a resin composition with a solid content concentration of 36 mass%. Next, the resin composition was applied with an applicator on the silicone release-treated surface of a PET release film (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was heated at 130° C. for 2 minutes to remove the solvent, and a 25 μm thick semiconductor back adhesive film (thermosetting semiconductor back adhesive film) was formed on the PET separator.

Example 2 A back adhesive film was produced in the same manner as in Example 1 except that the compounding amount of the visible light-absorbing black dye was changed as shown in Table 1.

Example 3 (production of laser marking layer) Acrylic resin (trade name "Teisanresin SG-P3", manufactured by Nagase Chemical Co., Ltd.) 90 parts by mass, epoxy resin _E1 (trade name "KI-3000- 4", manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd.) 40 parts by mass, epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) 60 parts by mass, phenol resin (trade name "MEH7851-SS ", manufactured by Meiwa Chemical Co., Ltd.) 100 parts by mass, silica filler (trade name "SO-25R", average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd.) 220 parts by mass, visible light absorbing black dye (commercial "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) 5 parts by mass, and 10 parts by mass of a thermosetting catalyst (trade name "Curezol 2PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) were added to the methyl ethyl group ketone and mixed to obtain a resin composition with a solid content concentration of 36% by mass. Next, the resin composition was applied with an applicator on the silicone release-treated surface of a PET release film (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was heated at 130° C. for 2 minutes to remove the solvent, and a laser marking layer (thermally cured layer) having a thickness of 12.5 μm was formed on the PET separator.

(Preparation of adhesive layer) Acrylic resin (trade name "Teisanresin SG-P3", manufactured by Nagase Chemical Co., Ltd.) 90 parts by mass, epoxy resin E ₁ (trade name "KI-3000-4", newly Nippon Steel & Sumikin Chemical Co., Ltd.) 40 parts by mass, epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) 60 parts by mass, phenol resin (trade name "MEH7851-SS", Meiwa Kasei Co., Ltd.) 100 parts by mass, silica filler (trade name "SO-25R", average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd.) 220 parts by mass, and infrared absorbing pigment (heavy metal oxide colorant , Maximum absorption wavelength: 1600 nm, average particle diameter: 20 nm) 30 parts by mass were added to methyl ethyl ketone and mixed to obtain a resin composition with a solid content concentration of 28 mass%. Next, the resin composition was applied with an applicator on the silicone release-treated surface of a PET release film (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was heated at 130° C. for 2 minutes to remove the solvent, and an adhesive layer with a thickness of 12.5 μm was produced on a PET separator.

Using a laminating machine, the laser marking layer on the PET separator produced in the above manner is bonded to the adhesive layer on the PET separator. Specifically, the exposed surfaces of the laser marking layer and the adhesive layer were bonded together under the conditions of a temperature of 100° C. and a pressure of 0.6 MPa. The back adhesive film was produced in the above-mentioned manner.

Comparative example 1 Except not using an infrared absorption pigment, it carried out similarly to Example 1, and produced the back adhesive film.

Comparative example 2 A back adhesive film was produced in the same manner as in Example 1 except that a visible light absorbing black dye was not used.

＜Evaluation＞ The following evaluation was performed about the back surface adhesive film obtained in the Example and the comparative example. The results are shown in Table 1.

(1) Total light transmittance, total light absorbance For the back adhesive films obtained in Examples and Comparative Examples, using an integrating sphere unit of an ultraviolet-visible-near-infrared spectrophotometer (trade name "V-670", manufactured by JASCO Co., Ltd.), measured The transmittance (absorbance) spectrum in the wavelength region is calculated to calculate the total light transmittance and total light absorbance. Table 1 shows the total light transmittance at a wavelength of 1300 nm, the difference between the total light absorbance at a wavelength of 1300 nm and the total light absorbance at a wavelength of 500 nm, the maximum transmittance in the wavelength range of 500 to 1300 nm, and its wavelength.

(2) Shading For the back adhesive films obtained in Examples and Comparative Examples, transmittance spectra were measured using an integrating sphere unit of an ultraviolet-visible-near-infrared spectrophotometer (trade name "V-670", manufactured by JASCO Corporation). Then, regarding the light-shielding properties, the case where the total light transmittance at a wavelength of 1300 nm was less than 20% was evaluated as ◯, and the case where it was 20% or more was evaluated as x.

(3) Laser marking The back adhesive film obtained in the examples and comparative examples was attached to the dicing tape to make a dicing tape integrated back adhesive film, and the back adhesive film was printed with a green laser with a wavelength of 532 nm through the dicing tape. Then, the case where the following two criteria are satisfied is evaluated as ○, and the case where at least one of the criteria is not satisfied is evaluated as ×, and the two standards are: the printed characters can be easily recognized in dark field observation using a microscope ( clear contrast); and no air bubbles were generated.

◎[Table 1]

1‧‧‧Dicing tape integrated back adhesive film 10‧‧‧The back adhesive film of the present invention 10'‧‧‧Small film 11‧‧‧adhesive layer 12‧‧‧Laser marking layer 20‧‧‧Cutting Tape 21‧‧‧Substrate 22‧‧‧adhesive layer 30‧‧‧Isolation film 40‧‧‧semiconductor wafer 41‧‧‧semiconductor chip 51‧‧‧Cutting frame 52‧‧‧Retainer 53‧‧‧Ejector pin member 54‧‧‧Adsorption fixture 61‧‧‧Installing the substrate 62‧‧‧Bump 63‧‧‧Underfill R‧‧‧irradiation area T1‧‧‧Wafer Processing Tape

Fig. 1 is a schematic view (front sectional view) showing an embodiment of the adhesive film on the back surface of a semiconductor of the present invention. Fig. 2 is a schematic view (front sectional view) showing another embodiment of the semiconductor back adhesive film of the present invention. Fig. 3 is a schematic view (front sectional view) showing an embodiment of the dicing tape-integrated semiconductor backside adhesive film of the present invention. Fig. 4(a), (b) is a schematic diagram (front sectional view) showing an embodiment of the attaching step. Fig. 5 is a schematic view (front sectional view) showing an embodiment of the cutting step. Fig. 6 is a schematic diagram (front sectional view) showing an embodiment of the picking-up process. Fig. 7 is a schematic diagram (front sectional view) showing an embodiment of a flip-chip mounting procedure.

10‧‧‧The back adhesive film of the present invention

11‧‧‧adhesive layer

12‧‧‧Laser marking layer

30‧‧‧Isolation film

Claims (4)

An adhesive film on the back of a semiconductor, which has a total light transmittance of 20% or less in the wavelength region of 500-1300nm, which contains an infrared absorber having a maximum absorption wavelength above 850nm in the wavelength region of 500-2000nm and an infrared absorber at 350-2000nm For the visible light absorbing dye having a maximum absorbance in the wavelength region of 700 nm, the infrared absorber is contained in an amount of 0.2 to 30% by mass, and the visible light absorbing dye is contained in an amount of 0.05 to 10% by mass. For the adhesive film on the back of a semiconductor according to claim 1, the difference between the total light absorbance at a wavelength of 500 nm and the total light absorbance at a wavelength of 1300 nm is 2 or less. The semiconductor back adhesive film according to claim 1 or 2, which contains epoxy resin and acrylic resin. The semiconductor back adhesive film according to claim 1 or 2, which contains a filler.

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