JP2020101708A - Semiconductor reverse surface adhesive film - Google Patents

Abstract

To provide a semiconductor reverse surface adhesive film superior in laser marking performance and infrared ray shielding performance.SOLUTION: A semiconductor reverse surface adhesive film of the present invention is a semiconductor reverse surface adhesive film used while adhering to the reverse surface of a semiconductor. The outermost layer when the semiconductor reverse surface is adhering contains a visible light absorbent, and one or more layers of the semiconductor reverse surface adhesive film contain an infrared absorbent having a maximum absorption wavelength at 850 nm or more within a wavelength region of 500 to 2000 nm. However, when the visible light absorbent can absorb both visible light and infrared rays, the infrared absorbent which the outermost layer can contain is different from the visible light absorbent.SELECTED DRAWING: Figure 1

Description

The present invention relates to a semiconductor backside adhesion film. More specifically, the present invention relates to a semiconductor backside adhesion film that can be used in the manufacturing process of semiconductor devices.

In recent years, flip chip type semiconductor devices in which semiconductor elements such as semiconductor chips are mounted on a substrate by flip chip bonding have been widely used. In a flip-chip type semiconductor device, a semiconductor backside adhesive film may be used as a film for forming a protective film on the back surface of a semiconductor element in order to prevent damage to the semiconductor element (Patent Documents 1 and 2). reference).

JP, 2011-151360, A International Publication No. 2014/092200

A conventional semiconductor backside adhesion film is usually blended with a colorant so that marking information can be imparted by laser marking, and has a light-shielding property. By the way, in recent years, the thickness of the silicon layer has been reduced. Along with this, there is a demand for thinning of the semiconductor backside adhesion film. However, there is a problem in that the wavelength of light that is transmitted from infrared rays to visible light is broadened when silicon is made thinner. In addition, in the semiconductor backside adhesion film, in many cases, the coloring agent having visible light absorption used for laser marking does not have absorption in the near infrared, so that it transmits infrared light and becomes thin. There is a problem that the light blocking property is deteriorated. If the light-shielding property of the semiconductor backside adhesive film is inferior, it becomes easier for light to pass through.Therefore, the light transmission adversely affects the semiconductor circuit surface such as noise, and the circuit surface can be seen by using an infrared microscope. In some cases, confidentiality could not be maintained.

The present invention has been made in view of the above problems, and an object thereof is to provide a semiconductor backside adhesive film having excellent laser marking properties and infrared shielding properties.

As a result of intensive studies to achieve the above-mentioned object, the present inventors have found that the outermost layer at the time of adhering a semiconductor back surface contains a visible light absorber, and one or more layers in the semiconductor backside adhesion film have a specific infrared ray. It has been found that a semiconductor backside adhesive film containing an absorber is excellent in laser marking property and infrared shielding property. The present invention has been completed based on these findings.

That is, the present invention is a semiconductor back surface adhesion film used in close contact with the back surface of a semiconductor, wherein the outermost layer at the time of the semiconductor back surface adhesion contains a visible light absorber, and one or more of the semiconductor back surface adhesion film. The layer contains an infrared absorbing agent having a maximum absorption wavelength at 850 nm or more in a wavelength range of 500 to 2000 nm, provided that when the visible light absorbing agent can absorb infrared rays together with visible light, the outermost layer is contained. The possible infrared absorber provides a semiconductor backside adhesion film which is an infrared absorber different from the visible light absorber. The semiconductor backside adhesive film having such a structure can be used in the process of manufacturing a semiconductor device.

The semiconductor backside adhesive film of the present invention, when used, that is, the semiconductor backside adhesive film is a layer which is the outermost layer in the state of being in close contact with the semiconductor backside contains a visible light absorber, among the layers included in the semiconductor backside adhesive film. At least one of the layers contains the infrared absorber. The semiconductor back surface adhesive film of the present invention having such a structure is excellent in laser marking property at the outermost layer at the time of semiconductor back surface adhesion, and the layer containing the infrared absorbent can sufficiently absorb infrared rays, and thus has an infrared shielding property. Excellent in performance.

The semiconductor backside adhesion film of the present invention has a multilayer structure including a layer serving as the outermost layer and an inner layer located between the outermost layer and the semiconductor element when the semiconductor backside is adhered, and a layer containing the infrared absorbent. It is preferable to have. The semiconductor backside adhesive film of the present invention having such a structure can be designed such that the outermost layer is a layer excellent in laser marking property, and the inner layer containing the infrared absorbent is designed as a layer excellent in infrared shielding property. Therefore, it is possible to obtain a back contact film that is more excellent in laser marking property and infrared shielding property.

In the semiconductor backside adhesion film of the present invention, the visible light absorber may be carbon black. The semiconductor backside adhesive film of the present invention having such a structure has high light-heat conversion efficiency and thus can impart good printability even in a small amount. Further, it is economically advantageous as compared with the case of using a dye.

In the semiconductor backside adhesion film of the present invention, the visible light absorbing agent may be a visible light absorbing dye. The semiconductor backside adhesion film of the present invention having such a structure is less likely to cause bubbles between the backside adhesion film and the dicing tape when subjected to laser marking with the dicing tape, and has an excellent appearance after laser marking. ..

In the semiconductor backside adhesion film of the present invention, the infrared absorber may be carbon black. In the semiconductor backside adhesion film of the present invention having such a constitution, the absorbance can be easily controlled by adjusting the blending amount of carbon black. It is also economically advantageous.

In the semiconductor backside adhesion film of the present invention, the infrared absorbing agent may be an infrared absorbing dye. The semiconductor backside adhesion film of the present invention having such a structure tends to be able to absorb long-wave infrared rays more.

The semiconductor backside adhesion film of the present invention is excellent in laser marking property and infrared ray shielding property. Therefore, by using the semiconductor backside adhesion film of the present invention, even if the semiconductor wafer is thinned, laser marking can be performed clearly, and when the semiconductor wafer is irradiated with infrared rays, It is possible to prevent the circuit surface from being adversely affected and to prevent the circuit surface from being visible.

It is a schematic diagram (front sectional view) showing one embodiment of a semiconductor back adhesion film of the present invention. It is the schematic (front sectional drawing) which shows other one Embodiment of the semiconductor back surface adhesion film of this invention. It is a schematic diagram (front sectional view) showing one embodiment of a semiconductor back contact adhesion film with a dicing tape of the present invention. It is a schematic diagram (front sectional view) showing one embodiment of a pasting process. It is a schematic diagram (front sectional view) showing one embodiment of a dicing process. It is a schematic diagram (front sectional view) showing one embodiment of a pick-up process. It is a schematic diagram (front sectional view) showing one embodiment of a flip chip mounting process.

[Semiconductor backside adhesion film]
The semiconductor backside adhesion film of the present invention (which may be simply referred to as “backside adhesion film”) is a film that is used in close contact with the backside of a semiconductor and is used for forming a protective film on the backside (so-called backside) of a semiconductor chip. Includes film (semiconductor backside protective film). In the back contact film of the present invention, the outermost layer at the time of back contact with the semiconductor contains a visible light absorber. In this specification, the outermost layer may be referred to as “A layer” when the backside adhesive film of the present invention is used (that is, the semiconductor backside adhesive film is in close contact with the semiconductor backside).

In the present specification, the “front surface” of a semiconductor (workpiece) refers to a surface on which bumps for flip-chip mounting of a work are formed, and the “rear surface” is opposite to the surface, that is, bumps are formed. The surface that does not exist. Further, in the present specification, the “back surface adhesion film” is a film that is in close contact with the back surface of the work even after being mounted on the semiconductor device, and is peeled off in the manufacturing process of the semiconductor device such as a dicing tape or a separator described later. The layers included are not included. Therefore, the "outermost surface layer" means the outermost surface layer in the backside adhesive film, and may have a layer such as a dicing tape or a separator described later that is peeled off in the process of manufacturing a semiconductor device on the outermost surface layer.

The back contact film of the present invention may have a single-layer structure or a multi-layer structure. In the case of a single-layer structure, the back contact film of the present invention is composed of only the A layer which is the outermost layer when the back surface of the work is in contact. In the case of a multi-layer structure, the back contact film of the present invention is composed of an A layer and a layer other than the A layer, that is, a layer which is a layer (inner layer) located between the outermost layer and the work at the time of back contact of the work. To be done.

One or more layers in the backside adhesive film of the present invention contain an infrared absorbing agent having a maximum absorption wavelength of 850 nm or more in a wavelength range of 500 to 2000 nm. When the back contact film of the present invention has a single-layer structure, the layer A contains the infrared absorbent. When the backside adhesive film of the present invention has a multi-layer structure, one or more layers of the layer A and the layers constituting the inner layer contain the infrared absorbent. However, when the visible light absorber contained in the A layer is an absorber capable of absorbing infrared rays together with visible light, the above infrared absorber which can be contained in the A layer (that is, when the A layer contains the above infrared absorber). The infrared absorber in the layer A) is an infrared absorber different from the visible light absorber (the absorber capable of absorbing infrared rays together with visible light).

The back contact film of the present invention preferably has, among other things, a multi-layer structure including an A layer and the layer containing the infrared absorbent, which is the inner layer. In this case, the outermost layer can be designed as a layer more excellent in laser marking property, and the inner layer containing the infrared absorbent can be designed as a layer more excellent in infrared shielding property, so that the laser marking property and the infrared shielding property can be obtained. It is possible to obtain a back contact film that is more excellent in its properties. In this specification, the layer containing the infrared absorbent, which is the inner layer, may be referred to as “B layer”.

One embodiment in the case where the back contact film of the present invention has a multilayer structure is shown in FIG. As shown in FIG. 1, the back contact film 10 of the present invention is disposed on the separator 30. The back contact film 10 of the present invention has a multilayer structure including the adhesive layer 11 and the laser mark layer 12, and the laser mark layer 12 is releasably adhered to the separator 30. The laser mark layer 12 shown in FIG. 1 corresponds to a layer (A layer) which is the outermost surface when the film 10 is adhered to the work back surface, and the adhesive layer 11 is an outermost layer when the film 10 is adhered to the work back surface. It corresponds to an inner layer located between the semiconductor elements. In the back contact film 10 of the present invention shown in FIG. 1, the adhesive layer 11 and/or the laser mark layer 12 contains the infrared absorbent. Further, in FIG. 1, the adhesive layer 11 and the laser mark layer 12 may have an opposite positional relationship (that is, the adhesive layer 11 is peelably adhered to the separator 30). When the adhesive layer 11 and the laser mark layer 12 have the positional relationship shown in FIG. 1, the back adhesion film 10 of the present invention can be attached to the back surface of the work and thermally cured before use. On the other hand, when the positional relationship between the adhesive layer 11 and the laser mark layer 12 is opposite to that shown in FIG. 1, the adhesive layer 11 and the laser mark layer 12 can be preferably used for producing a dicing tape-integrated backside adhesion film described later.

The back contact film 10 shown in FIG. 1 has a laminated structure in which the adhesive layer 11 is thermoset while the laser mark layer 12 is not substantially thermoset by heat treatment at 120° C. for 2 hours, A thermosetting-less laminated structure in which both the adhesive layer 11 and the laser mark layer 12 are not substantially thermoset by the heat treatment at 120° C. for 2 hours, while the adhesive layer 11 is cured by irradiation with radiation. The laser mark layer 12 may have a thermosetting-less laminated structure in which it is not substantially thermoset. The layer that is not substantially thermoset by the heat treatment at 120° C. for 2 hours in the back contact film 10 includes a thermoset layer that has already been cured.

FIG. 2 shows an embodiment in which the back contact film of the present invention has a single layer structure. As shown in FIG. 2, the back contact film 10 of the present invention corresponds to the outermost layer (A layer) and is disposed on the separator 30. In the back contact film 10 of the present invention shown in FIG. 2, the back contact film 10, which is the outermost layer, contains the infrared absorbent. When the visible light absorber in the backside contact film 10 absorbs infrared rays together with visible light, the backside contact film 10 contains an infrared absorber different from the absorber that absorbs infrared rays together with the visible light. The backside contact film 10 of the present invention can be used by being attached to the backside of a work and thermally cured.

(A layer)
The layer A is the outermost layer in the back surface contact film when the back surface contact film is used in close contact with the back surface of the work. The layer A functions as a laser mark layer when the back surface of the work is in close contact, and laser marking is performed in the manufacturing process of the semiconductor device. Further, when the layer A contains the infrared absorbent, it also functions as an infrared shielding layer.

The layer A and the composition (resin composition) forming the layer A contain a visible light absorber. Examples of the visible light absorber include black colorants, cyan colorants, magenta colorants, and yellow colorants. The black colorant is preferable from the viewpoint of ensuring a high contrast between the portion marked by laser marking on the backside adhesive film and the other portion and realizing good visibility of the marking information. The visible light absorber may contain only one kind or may contain two or more kinds.

Examples of black colorants include azo pigments such as carbon black, carbon nanotubes, graphite (copper oxide), copper oxide, manganese dioxide, and azomethine azo black, aniline black, perylene black, titanium black, cyanine black, activated carbon, and ferrite. , Magnetite, chromium oxide, iron oxide, molybdenum disulfide, complex oxide type black dye, anthraquinone type organic black dye, azo type organic black dye and the like. Examples of carbon black include furnace black, channel black, acetylene black, thermal black, lamp black and the like. Examples of black colorants include C.I. I. Solvent Black 3, ibid 7, ibid 22, ibid 27, ibid 29, ibid 34, ibid 43, ibid 70; I. Direct Black 17, the same 19, the same 22, the same 32, the same 38, the same 51, the same 71; I. Acid Black 1, 2, 2, 24, 26, 31, 31, 48, 52, 107, 109, 110, 119, 154; C.I. I. Disperse Black 1, 3, 3, 10, 24; C.I. I. Pigment Black 1 and 7 are also included.

Examples of cyan colorants include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; C.I. I. Acid Blue 6, the same 45; C.I. I. Pigment Blue 1, the same 2, the same 3, the same 15, the same 15:1, the same 15:2, the same 15:3, the same 15:4, the same 15:5, the same 15:6, the same 16, the same 17, the same. 17:1, ibid 18, ibid 22, ibid 25, ibid 56, ibid 60, ibid 63, ibid 65, ibid 66; I. Butt Blue 4; ibid. 60, C.I. I. Pigment Green 7 and the like.

Examples of magenta colorants include C.I. I. Solvent Red 1, Same 3, Same 8, Same 23, Same 24, Same 25, Same 27, Same 30, Same 49, Same 52, Same 58, Same 63, Same 81, Same 82, Same 83, Same 84, Same 100, 109, 111, 121, 122; C.I. I. Disperse Red 9; C.I. I. Solvent Violet 8, ibid 13, ibid 14, ibid 21, ibid 27; I. Disperse Violet 1; C.I. I. Basic Red 1, the same 2, the same 9, the same 12, the same 13, the same 14, the same 15, the same 17, the same 18, the same 22, the same 23, the same 24, the same 27, the same 29, the same 32, the same 34, the same 35, 36, 37, 38, 39, 40; I. Basic violet 1, the same 3, the same 7, the same 10, the same 14, the same 15, the same 21, the same 25, the same 26, the same 27, 28 and the like. Examples of magenta colorants include C.I. I. Pigment Red 1, the same 2, the same 3, the same 4, the same 5, the same 6, the same 7, the same 8, the same 9, the same 10, the same 11, the same 12, the same 13, the same 14, the same 15, the same 16, the same. 17, the same 18, the same 19, the same 21, the same 22, the same 23, the same 30, the same 31, the same 32, the same 37, the same 38, the same 39, the same 40, the same 41, the same 42, the same 48:1, the same 48:2, 48:3, 48:4, 49, 49:1, 50, 51, 52, 52:2, 53:1, 54, 55, 56, 57:1, 58, 60, 60:1, 63, 63:1, 63:2, 64, 64:1, 67, 68, 81, 83, 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146, 147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178, 179, 184, 185. , 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; I. Pigment Violet 3, the same 9, the same 19, the same 23, the same 31, the same 32, the same 33, the same 36, the same 38, the same 43, the same 50; I. Butred 1, 2, 2, 10, 13, 15, 23, 29, 35 and the like.

Examples of yellow colorants include C.I. I. Solvent Yellow 19, the same 44, the same 77, the same 79, the same 81, the same 82, the same 93, the same 98, the same 103, the same 104, the same 112, the same 162; I. Pigment Orange 31, the same 43; C.I. I. Pigment Yellow 1, the same 2, the same 3, the same 4, the same 5, the same 6, the same 7, the same 10, the same 11, the same 12, the same 13, the same 14, the same 15, the same 16, the same 17, the same 23, the same. 24, the same 34, the same 35, the same 37, the same 42, the same 53, the same 55, the same 65, the same 73, the same 74, the same 75, the same 81, the same 83, the same 93, the same 94, the same 95, the same 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139. , 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; I. Butt Yellow 1, 3, and 20, and the like.

The visible light absorbing agent may be a pigment (visible light absorbing pigment) or a dye (visible light absorbing dye). When a visible light absorbing pigment (particularly carbon black) is used as the visible light absorbing agent, the photothermal conversion efficiency is high, so that good printability can be imparted with a small amount. Further, it is economically advantageous as compared with the case of using a dye. When a visible light absorbing dye is used as the visible light absorbing agent, bubbles are less likely to be generated between the backing adhesive film and the dicing tape when laser marking is performed with the dicing tape, and the appearance after laser marking is excellent. The visible light absorbing dye is preferably a dye having a maximum absorbance in the wavelength region of 350 to 700 nm. Examples of the visible light absorbing dyes include anthraquinone dyes, perinone dyes, perylene dyes, quinoline dyes, quinacridone dyes, benzimidazolone dyes, azo dyes, isoindolinone dyes, isoindoline dyes. , Dioxazine dyes, phthalocyanine dyes and the like. The visible light absorbing dyes may be used alone or in combination of two or more.

The content ratio of the visible light absorber is preferably 0.05% by mass or more, more preferably 0.1% by mass or more, still more preferably 0.15% by mass or more, based on the total mass of the A layer. The content ratio is preferably 8% by mass or less, more preferably 6% by mass or less, and further preferably 4% by mass or less. When the content ratio is 0.05% by mass or more, the linear transmittance at a wavelength of 550 nm of the back contact film of the present invention becomes low. In addition, good printability (printing with good visibility) can be obtained. When the content ratio is 8% by mass or less, air bubbles are less likely to be generated between the backing adhesive film and the dicing tape when laser marking is performed with the dicing tape.

The content ratio of the visible light absorber is preferably 0.05 to 5% by mass, more preferably 0.1 to 2% by mass, and still more preferably 0.2 to 1.5% with respect to the total mass of the A layer. It is% by mass. When the content ratio is 0.05% by mass or more, the laser marking property is more excellent. When the content ratio is 5% by mass or less, bubbles are less likely to be generated between the backside contact film and the dicing tape when laser marking is performed with the dicing tape.

The layer A and the resin composition preferably include a thermoplastic resin. When the A layer is a thermosetting layer (that is, a thermosetting layer or a thermosetting layer), the A layer and the resin composition may include a thermosetting resin and a thermoplastic resin, It may contain a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to form a bond. When the layer A and the resin composition include a thermoplastic resin having a thermosetting functional group, the resin composition does not need to include a thermosetting resin (epoxy resin or the like).

The thermoplastic resin in the layer A and the resin composition has a binder function, for example. Examples of the thermoplastic resin include acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin. , Polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as polyethylene terephthalate (PET) or polybutylene terephthalate (PBT), polyamide imide resin , Fluororesins and the like. The thermoplastic resins may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint of low ionic impurities and high heat resistance.

The acrylic resin is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth)acryloyl group in the molecule) as a structural unit of the polymer. The acrylic resin is preferably a polymer containing the largest amount of the structural units derived from the (meth)acrylic acid ester in a mass ratio. The acrylic resin may be used alone or in combination of two or more. In addition, in the present specification, “(meth)acrylic” means “acrylic” and/or “methacrylic” (either one or both of “acrylic” and “methacrylic”), and the same applies to others. ..

Examples of the (meth)acrylic acid ester include a hydrocarbon group-containing (meth)acrylic acid ester that may have an alkoxy group. Examples of the hydrocarbon group-containing (meth)acrylic acid ester include (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, and (meth)acrylic acid aryl ester. Examples of the (meth)acrylic acid alkyl ester include (meth)acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (lauryl ester), tridecyl ester, tetradecyl ester , Hexadecyl ester, octadecyl ester, eicosyl ester and the like. Examples of the cycloalkyl ester of (meth)acrylic acid include cyclopentyl ester and cyclohexyl ester of (meth)acrylic acid. Examples of the (meth)acrylic acid aryl ester include phenyl ester and benzyl ester of (meth)acrylic acid. Examples of the hydrocarbon group-containing (meth)acrylic acid ester having an alkoxy group include those in which one or more hydrogen atoms in the hydrocarbon group in the above-mentioned hydrocarbon group-containing (meth)acrylic acid ester are substituted with an alkoxy group, Examples thereof include 2-methoxymethyl ester, 2-methoxyethyl ester, and 2-methoxybutyl ester of (meth)acrylic acid. The hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more.

The acrylic resin is derived from another monomer component copolymerizable with a hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group for the purpose of modifying cohesive strength, heat resistance and the like. Units may be included. Examples of the other monomer component include functional groups such as carboxy group-containing monomer, acid anhydride monomer, hydroxy group-containing monomer, glycidyl group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Examples thereof include monomers. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, Examples thereof include 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxymethylcyclohexyl)methyl (meth)acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, sulfopropyl(meth)acrylate, and (meth ) Acryloyloxynaphthalene sulfonic acid and the like can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate. As the other monomer component, only one kind may be used, or two or more kinds may be used.

The acrylic resin that can be contained in the layer A and the above resin composition is butyl acrylate, ethyl acrylate, acrylonitrile, and acrylic resin from the viewpoint of achieving both visibility of engraving information by laser marking and good cleaving property during expansion. It is preferably a copolymer of monomers appropriately selected from acids.

When the layer A and the resin composition include a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, Thermosetting polyimide resin etc. are mentioned. The thermosetting resin may be used alone or in combination of two or more. Epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like that may cause corrosion of the semiconductor chip tends to be small. Further, a phenol resin is preferable as the curing agent for the epoxy resin.

Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, biphenyl type. Epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, cresol novolac type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin, etc. Examples include polyfunctional epoxy resins. The epoxy resins may be used alone or in combination of two or more.

Among them, phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenyl methane type epoxy resin, tetraphenylene, because of its excellent reactivity with phenol resin as a curing agent and excellent heat resistance. Roll ethane type epoxy resins are preferred.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolac type phenol resins such as phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, and nonylphenol novolac resin. In addition, examples of the phenol resin also include resol type phenol resin and polyoxystyrene such as polyparaoxystyrene. The above phenolic resins may be used alone or in combination of two or more.

In the layer A and the above resin composition, from the viewpoint of sufficiently promoting the curing reaction between the epoxy resin and the phenol resin, the phenol resin has a hydroxyl group in the phenol resin per 1 equivalent of the epoxy group in the epoxy resin component. It is preferably contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

When the A layer and the resin composition include a thermosetting resin, the content ratio of the thermosetting resin is preferably 5 to 60 mass% with respect to the total mass of the A layer or the resin composition, and more preferably Is 10 to 50% by mass.

When the layer A and the resin composition include a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth)acrylic acid ester as a structural unit having the largest mass ratio. As the hydrocarbon group-containing (meth)acrylic acid ester, for example, the hydrocarbons exemplified as the hydrocarbon group-containing (meth)acrylic acid ester forming the acrylic resin as the thermoplastic resin that can be contained in the layer A described above. Group-containing (meth)acrylic acid esters are mentioned. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group are preferable. That is, as the thermosetting functional group-containing acrylic resin, glycidyl group-containing acrylic resin and carboxy group-containing acrylic resin are particularly preferable. Further, it is preferable to include a curing agent together with the thermosetting functional group-containing acrylic resin, and the curing agent is exemplified as a cross-linking agent that can be contained in the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer described below. There are things. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol compound is preferably used as the curing agent, and for example, the above-mentioned various phenol resins can be used.

When the layer A and the resin composition contain a thermosetting resin, it is preferable to contain a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is included, the curing reaction of the resin component can be sufficiently promoted when the layer A is cured, and the curing reaction rate can be increased. Examples of the thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, trihalogenborane compounds, and the like. Examples of the imidazole compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl- 4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazo Lithium trimellitate, 2,4-diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine, 2,4-diamino-6-[2′-undecylimidazolyl-(1 ')]-Ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6- [2′-methylimidazolyl-(1′)]-ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, etc. Can be mentioned. Examples of the triphenylphosphine compound include triphenylphosphine, tributylphosphine, tri(p-methylphenyl)phosphine, tri(nonylphenyl)phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium, methyltriphenyl. Examples thereof include phosphonium chloride, methoxymethyltriphenylphosphonium, benzyltriphenylphosphonium chloride and the like. The triphenylphosphine compound also includes a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such a compound include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, triphenylphosphinetriphenylborane, and the like. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihalogen borane compound include trichloroborane. The thermosetting catalyst may contain only one kind or may contain two or more kinds.

The A layer and the resin composition may include a filler. By including the filler, physical properties such as the elastic modulus of the layer A, the yield strength and the elongation at break can be easily adjusted. Further, it becomes possible to more clearly give the marking information by laser marking. Examples of the filler include inorganic fillers and organic fillers. As the constituent material of the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, nitride Examples thereof include silicon, boron nitride, crystalline silica, amorphous silica and the like. Examples of the constituent material of the inorganic filler also include simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon and graphite. Examples of the constituent material of the organic filler include polymethylmethacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. The above-mentioned filler may contain only one kind, or may contain two or more kinds.

The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. The average particle size of the filler is preferably 10 μm or less, more preferably 8 μm or less, and further preferably 7 μm or less. The average particle diameter is preferably 0.1 μm or more, more preferably 0.2 μm or more. When the average particle diameter is 10 μm or less, irregular reflection of a light beam irradiated at the time of laser marking is suppressed, the infrared ray shielding property is excellent, and the marking information can be more clearly provided by the laser marking. Further, the backing adhesive film that is to be made into smaller pieces is more excellent in cleaving property. In the present specification, the average particle size of the filler can be determined by using, for example, a photometric particle size distribution meter (trade name “LA-910”, manufactured by Horiba Ltd.).

The content ratio of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and further preferably 20% by mass or more with respect to the total mass of the layer A or the resin composition. The content ratio is preferably 60% by mass or less, more preferably 57% by mass or less, and further preferably 55% by mass or less.

As described above, the layer A and the resin composition may contain an infrared absorbing agent having a maximum absorption wavelength of 850 nm or more in the wavelength range of 500 to 2000 nm. However, as described above, when the visible light absorber contained in the A layer is an absorber capable of absorbing infrared light together with visible light, the infrared absorber contained in the A layer absorbs infrared light together with the visible light. It is an infrared absorber different from the possible absorbers. The infrared absorbers may be used alone or in combination of two or more.

The layer A and the resin composition may contain other components as necessary. Examples of the other component include flame retardants, silane coupling agents, ion trap agents and the like. Examples of the flame retardant include aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, metal hydroxides such as complexed metal hydroxides, phosphazene compounds, antimony trioxide, and pentametal oxides. Examples thereof include antimony oxide and brominated epoxy resin. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, hydrous antimony oxide (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (for example, manufactured by Toagosei Co., Ltd.). "IXE-100"), magnesium silicate (for example, "Kyoward 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (for example, "Kyoward 700" manufactured by Kyowa Chemical Industry Co., Ltd.), and the like. A compound capable of forming a complex with a metal ion can also be used as the ion trap agent. Examples of such compounds include triazole compounds, tetrazole compounds, and bipyridyl compounds. Of these, triazole compounds are preferable from the viewpoint of stability of a complex formed with a metal ion. Examples of such triazole-based compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzotriazole, 2-(2-hydroxy-). 5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3-t-butyl-5-methylphenyl )-5-Chlorobenzotriazole, 2-(2-hydroxy-3,5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-5-t-octylphenyl)benzotriazole, 6-(2 -Benzotriazolyl)-4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1- (1,2-Dicarboxydiethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazol-1-yl)methyl}phenol , 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, 3-(2H-benzotriazol-2-yl)-5-(1,1-dimethylethyl)-4-hydroxy, octyl -3-[3-t-Butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-ethylhexyl-3-[3-t-butyl-4-hydroxy -5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-( 1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-t-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2- (2-Hydroxy-5-t-octylphenyl)-benzotriazole, 2-(3-t-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3, 5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chloro-benzotriazole, 2-[2-hydroxy-3,5-di (1 ,1-Dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol ], 2-[2-Hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole, methyl-3-[3-(2H-benzotriazol-2-yl)-5- Examples thereof include t-butyl-4-hydroxyphenyl]propionate. Further, a specific hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, or a polyphenol compound can also be used as the ion trap agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralphine, tannin, gallic acid, methyl gallate, and pyrogallol. Examples of the colorant other than the black pigment include a cyan colorant, a magenta colorant, and a yellow colorant. The other components may be used alone or in combination of two or more.

The layer A is preferably a thermosetting layer (thermoset layer) obtained by thermosetting a thermosetting component. The thermosetting A layer is formed by curing the thermosetting resin composition layer formed from the resin composition forming the A layer.

(B layer)
The layer B is a layer that becomes an inner layer (a layer located between the outermost surface layer and the work) in the back adhesion film when the back adhesion film is used in close contact with the back surface of the work. The layer B may be an adhesive layer having a surface adhered to the back surface of the work when the work back surface is in close contact, or may be an intermediate layer located between the adhesive layer and the outermost surface layer. The layer B, which serves as an adhesive layer, may have thermosetting properties so that it can be adhered to and protected by the back surface of the work by thermosetting after being adhered to the back surface of the work. When the adhesive layer is a non-thermosetting material that does not have thermosetting property, the adhesive layer is protected by adhering to the back surface of the work by adhesiveness (wettability) at the interface due to pressure sensitivity or the like or chemical bonding. It is possible.

When the backside adhesive film of the present invention has the B layer, the B layer contains an infrared absorbing agent having a maximum absorption wavelength at 850 nm or more in the wavelength range of 500 to 2000 nm. The infrared absorbers may be used alone or in combination of two or more.

It is preferable that the B layer and the composition (resin composition) forming the B layer include a thermoplastic resin. When the B layer has thermosetting properties, the B layer and the resin composition forming the B layer may include a thermosetting resin and a thermoplastic resin, and may react with a curing agent to form a bond. It may contain a thermoplastic resin having a thermosetting functional group. When the B layer contains a thermoplastic resin having a thermosetting functional group, the resin composition does not need to contain a thermosetting resin (epoxy resin or the like).

The thermoplastic resin has a binder function in the B layer, for example. Examples of the thermoplastic resin include those exemplified as the thermoplastic resin that can be contained in the A layer. The thermoplastic resins may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint of low ionic impurities and high heat resistance.

The acrylic resin that can be contained in the B layer and the resin composition forming the B layer is an acrylic acid from the viewpoint of achieving both good adhesiveness to a work and good cleaving property during expansion when the B layer is an adhesive layer. It is preferably a copolymer of monomers appropriately selected from butyl, ethyl acrylate, acrylonitrile, and acrylic acid.

When the B layer and the resin composition forming the B layer include a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin. , Silicone resin, thermosetting polyimide resin and the like. The thermosetting resin may be used alone or in combination of two or more. Epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like that may cause corrosion of the semiconductor chip tends to be small. Further, a phenol resin is preferable as the curing agent for the epoxy resin.

Examples of the epoxy resin include those exemplified as the epoxy resin that can be contained in the layer A. The epoxy resins may be used alone or in combination of two or more. Among them, phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenyl methane type epoxy resin, tetraphenylene, because of its excellent reactivity with phenol resin as a curing agent and excellent heat resistance. Roll ethane type epoxy resins are preferred.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include those exemplified as the phenol resin that can be contained in the layer A. The above phenolic resins may be used alone or in combination of two or more.

In the B layer and the resin composition forming the B layer, from the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin, the phenol resin is the phenol resin per 1 equivalent of the epoxy group in the epoxy resin component. The hydroxyl group therein is preferably contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

When the B layer and the resin composition forming the B layer include a thermosetting resin, the content ratio of the thermosetting resin is the resin forming the B layer or the B layer from the viewpoint of appropriately curing the B layer. The amount is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, based on the total mass of the composition.

When the B layer and the resin composition forming the B layer include a thermoplastic resin having a thermosetting functional group, the thermoplastic resin is exemplified as the thermosetting functional group-containing acrylic resin that can be included in the A layer. The ones that have been done are listed. Among them, glycidyl group-containing acrylic resin and carboxy group-containing acrylic resin are particularly preferable. Further, it is preferable to include a curing agent together with the thermosetting functional group-containing acrylic resin, and as the curing agent, for example, those exemplified as the cross-linking agent that can be included in the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer described below. Is mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, and for example, the above-mentioned various phenol resins can be used.

The layer B and the resin composition forming the layer B may contain a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is included, the curing reaction of the resin component can be sufficiently advanced in curing the resin composition, and the curing reaction rate can be increased. Examples of the thermosetting catalyst include those exemplified as the thermosetting catalyst that can be included in the layer A. The thermosetting catalyst may contain only one kind or may contain two or more kinds.

The B layer and the resin composition forming the B layer may contain a filler. By including the filler, physical properties such as the elastic modulus of the layer B, the yield strength and the elongation at break can be easily adjusted. Examples of the filler include those exemplified as the filler that can be contained in the layer A described above. The above-mentioned filler may contain only one kind, or may contain two or more kinds.

The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. The average particle size of the filler is preferably 10 μm or less, more preferably 8 μm or less, and further preferably 7 μm or less. The average particle diameter is preferably 0.1 μm or more, more preferably 0.2 μm or more. When the average particle diameter is 10 μm or less, the backside adhesive film that is to be made into smaller pieces is more excellent in cleaving properties.

The content ratio of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and further preferably 20% by mass or more, based on the total mass of the B layer or the resin composition forming the B layer. The content ratio is preferably 60% by mass or less, more preferably 57% by mass or less, and further preferably 55% by mass or less.

The B layer and the resin composition forming the B layer may contain other components as necessary. Examples of the other components include flame retardants, silane coupling agents, and ion trap agents, which are exemplified as the other components that the layer A may include. The other components may be used alone or in combination of two or more.

As described above, one or more layers in the backside adhesive film of the present invention contain an infrared absorbing agent having a maximum absorption wavelength at 850 nm or more in the wavelength range of 500 to 2000 nm. Examples of the infrared absorbing agent include pigments (infrared absorbing pigments) and dyes (infrared absorbing dyes) having a maximum absorption wavelength of 850 nm or more in the wavelength range of 500 to 2000 nm. When an infrared absorbing pigment is used, the absorbance can be easily controlled by adjusting the blending amount. It is also economically advantageous. When an infrared absorbing dye is used, it tends to be able to absorb long-wave infrared rays more.

Examples of the infrared absorbing pigment include indium tin oxide, antimony tin oxide, zinc oxide, lead white, lithopone, titanium oxide, chromium oxide, iron oxide, aluminum oxide, precipitable barium sulfate, barite powder, red lead, iron oxide. Red, yellow lead, zinc yellow (1 type of zinc yellow, 2 types of zinc yellow), ultramarine blue, prussian blue (potassium ferrocyanide), zircon gray, praseodymium yellow, chrome titanium yellow, chrome green, peacock, victoria green , Navy blue, vanadium zirconium blue, chrome tin pink, ceramic red, salmon pink, titanium black, tungsten compounds, metal borides and the like. Also, carbon black, silver tin amalgam, benta black, carbon nanotubes, metal oxides containing metal elements such as Co, Cr, Cu, Mn, Ru, Fe, Ni, Sn, Ti, Ag, and Al, and metal nitrogen compounds. Black pigments and the like. The infrared absorbing pigments may be used alone or in combination of two or more.

Examples of the infrared absorbing dyes include cyanine dyes, phthalocyanine dyes, naphthalocyanine dyes, immonium dyes, aminoium dyes, quinolium dyes, pyrylium dyes, Ni complex dyes, pyrrolopyrrole dyes, copper complexes, quaterrylene dyes, and azo dyes. , Anthraquinone dyes, diimonium dyes, squarylium dyes, porphyrin dyes and the like. The infrared absorbing dyes may be used alone or in combination of two or more.

As the infrared absorbent, an infrared absorbing pigment is preferable, from the viewpoint of improving the infrared shielding property of the back contact film. The average particle size of the infrared absorbing pigment is preferably 10 nm or more, more preferably 20 nm or more, further preferably 40 nm or more. When the average particle diameter of the infrared absorbing pigment is 10 nm or more, infrared rays can be absorbed more efficiently, and the infrared shielding property of the back contact film is further improved. The average particle size is preferably 10 μm or less from the viewpoint of suppressing irregular reflection of visible light for laser marking.

The content ratio of the infrared absorbent in the layer containing the infrared absorbent is preferably 0.5 to 15% by volume, more preferably 0.8 to 12% by volume, based on the total mass of the layer containing the infrared absorbent. %, and more preferably 1 to 10% by volume. When the content ratio is 0.5% by volume or more, the infrared shielding property is more excellent. When the content ratio is 15% by volume or less, the compounding amount can be suppressed and the cost can be reduced. Further, in the case of the infrared absorbing pigment, it is possible to prevent the film surface from becoming rough.

The thickness of the A layer is, for example, 2 to 180 μm, preferably 4 to 160 μm.

The thickness of the inner layer (total thickness) is, for example, 2 to 200 μm, preferably 4 to 160 μm, more preferably 6 to 100 μm, and further preferably 8 to 80 μm.

The ratio of the thickness of the layer A to the thickness of the inner layer (total thickness) is preferably 1 or more, more preferably 1.5 or more, still more preferably 2 or more. The ratio is, for example, 8 or less.

The thickness of the back contact film of the present invention is, for example, 2 to 200 μm, preferably 4 to 160 μm, more preferably 6 to 100 μm, and further preferably 10 to 80 μm. When the thickness is 2 μm or more, the back surface of the work can be protected more firmly. When the thickness is 200 μm or less, the work after the back surface contact can be made thinner.

[Dicing tape integrated semiconductor backside adhesion film]
The backside adhesive film of the present invention comprises a dicing tape having a laminated structure including a substrate and an adhesive layer, and a backside adhesive film of the present invention that is releasably adhered to the adhesive layer in the dicing tape. In other words, it may be used as a dicing tape-integrated semiconductor backside adhesion film (may be referred to as "dicing tape-integrated backside adhesion film"). The dicing tape-integrated backside contact film may be referred to as the "dicing tape-integrated backside contact film of the present invention". When the back contact film of the present invention is used as a dicing tape-integrated back contact film, wrinkles can be made less likely to occur when it is attached to a substrate.

One embodiment of the backside adhesive film with a dicing tape integrated according to the present invention will be described with reference to FIG. The backing adhesive film 1 with integrated dicing tape shown in FIG. 3 uses the backing adhesive film 10 of the present invention shown in FIG. 1, and is placed on the separator 30. The backing adhesive film 1 with integrated dicing tape can be used in the process of obtaining a semiconductor chip accompanied by a film having a size corresponding to a chip for forming a semiconductor chip backing adhesive film. It has a laminated structure including the dicing tape 20.

(Base material)
The base material in the dicing tape is an element that functions as a support in the dicing tape or the backside contact film integrated with the dicing tape. Examples of the substrate include a plastic substrate (particularly a plastic film). The base material may be a single layer or a laminate of the same or different base materials.

Examples of the resin constituting the plastic substrate include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene. , Polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene- Polyolefin resin such as butene copolymer, ethylene-hexene copolymer; polyurethane; polyester such as polyethylene terephthalate (PET), polyethylene naphthalate, polybutylene terephthalate (PBT); polycarbonate; polyimide; polyether ether ketone; polyether imide Polyamide such as aramid and wholly aromatic polyamide; polyphenyl sulfide; fluororesin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; silicone resin and the like. It is easy to maintain the chip separation distance by using the partial heat shrinkage of the dicing tape or the base material in the expanding process for ensuring the good heat shrinkability in the base material and expanding the separation distance between the semiconductor chips after dicing. From the viewpoint, the base material preferably contains an ethylene-vinyl acetate copolymer or polyvinyl chloride as a main component. The main component of the base material is a component that occupies the largest mass ratio among the constituent components. The above resins may be used alone or in combination of two or more. When the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer as described below, the base material preferably has radiation transparency.

When the substrate is a plastic film, the plastic film may be non-oriented, or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film is heat shrinkable in at least one direction. In order for the base material and the dicing tape to have isotropic heat shrinkability, the base material is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching an unstretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The base material and the dicing tape preferably have a heat shrinkage rate of 1 to 30%, more preferably 2 to 25%, and more preferably 2 to 25% in a heat treatment test performed under the conditions of a heating temperature of 100° C. and a heating time treatment of 60 seconds. It is preferably 3 to 20%, particularly preferably 5 to 20%. The heat shrinkage ratio is preferably a heat shrinkage ratio in at least one of the MD direction and the TD direction.

The pressure-sensitive adhesive layer side surface of the base material is, for example, corona discharge treatment, plasma treatment, sand mat processing, ozone exposure treatment, flame exposure treatment, high piezoelectric impact, for the purpose of enhancing the adhesion to the pressure-sensitive adhesive layer, the holding property, etc. Physical treatment such as exposure treatment or ionizing radiation treatment; chemical treatment such as chromic acid treatment; surface treatment such as easy adhesion treatment with a coating agent (undercoating agent) may be performed. Further, in order to impart antistatic ability, a conductive vapor deposition layer containing a metal, an alloy, an oxide thereof or the like may be provided on the surface of the substrate. The surface treatment for enhancing the adhesiveness is preferably performed on the entire surface of the base material on the pressure-sensitive adhesive layer side.

The thickness of the base material is preferably 40 μm or more, more preferably 50 μm or more, further preferably from the viewpoint of ensuring the strength for the base material to function as a support in the dicing tape and the dicing tape-integrated backside adhesion film. Is 55 μm or more, particularly preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape and the dicing tape-integrated backside adhesion film, the thickness of the base material is preferably 200 μm or less, more preferably 180 μm or less, still more preferably 150 μm or less. is there.

(Adhesive layer)
The pressure-sensitive adhesive layer in the dicing tape is a pressure-sensitive adhesive layer that can intentionally reduce the pressure-sensitive adhesive force by an external action during the process of using the backing film integrated with the dicing tape (pressure-sensitive adhesive layer capable of reducing pressure-sensitive adhesive force). There may be, or may be a pressure-sensitive adhesive layer (adhesion non-reduction type pressure-sensitive adhesive layer) that has little or no reduction in adhesion depending on the action from the outside in the process of using the dicing tape-integrated backside adhesion film, It can be appropriately selected according to the method and conditions for individualizing the work to be individualized by using the backing adhesive film integrated with dicing tape. The pressure-sensitive adhesive layer may have a single-layer structure or a multi-layer structure.

When the pressure-sensitive adhesive layer is a pressure-sensitive adhesive layer capable of reducing the pressure-sensitive adhesive strength, the pressure-sensitive adhesive layer shows a relatively high pressure-sensitive adhesive strength and a relatively low pressure-sensitive adhesive strength in the manufacturing process and the use process of the backing adhesive film with integrated dicing tape. It is possible to selectively use the state of showing power. For example, when the backside adhesive film is attached to the adhesive layer of the dicing tape in the manufacturing process of the dicing tape integrated backside adhesive film, or when the dicing tape integrated backside adhesive film is used in the dicing process, the adhesive layer is relatively It is possible to suppress and prevent the backing adhesive film from floating from the adhesive layer by utilizing the state that shows a high adhesive strength, while the semiconductor chip is then removed from the dicing tape of the backing adhesive film with integrated dicing tape. In the pickup step for picking up, the adhesive force of the pressure-sensitive adhesive layer is reduced, so that the pickup can be easily performed.

Examples of the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer capable of reducing the pressure-sensitive adhesive strength include radiation-curable pressure-sensitive adhesives and heat-foamable pressure-sensitive adhesives. As the pressure-sensitive adhesive that forms the pressure-sensitive adhesive force-reducible pressure-sensitive adhesive layer, one kind of pressure-sensitive adhesive may be used, or two or more kinds of pressure-sensitive adhesive may be used.

As the radiation-curable pressure-sensitive adhesive, for example, a pressure-sensitive adhesive that can be cured by irradiation with electron rays, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used. An adhesive (ultraviolet curable adhesive) can be used particularly preferably.

The radiation-curable pressure-sensitive adhesive is, for example, an addition containing a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. Included are radiation curable adhesives of the type.

The acrylic polymer is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth)acryloyl group in the molecule) as a structural unit of the polymer. It is preferable that the acrylic polymer is a polymer that contains the most constituent units derived from a (meth)acrylic acid ester in a mass ratio. The acrylic polymer may be used alone or in combination of two or more.

Examples of the (meth)acrylic acid ester include a hydrocarbon group-containing (meth)acrylic acid ester that may have an alkoxy group. As the hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group, the hydrocarbon group which may have an alkoxy group exemplified as a constitutional unit of the acrylic resin which can be contained in the back adhesive film described above. Group-containing (meth)acrylic acid esters are mentioned. The hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more. As the hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group, 2-ethylhexyl acrylate and lauryl acrylate are preferable. In order to properly express the basic properties such as the adhesiveness due to the hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group in the pressure-sensitive adhesive layer, all monomer components for forming the acrylic polymer are used. The ratio of the hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group is preferably 40% by mass or more, and more preferably 60% by mass or more.

The acrylic polymer is derived from another monomer component copolymerizable with the above-mentioned hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group for the purpose of modifying cohesive strength, heat resistance and the like. The constituent unit may be included. Examples of the other monomer component include the other monomers exemplified as the constituent units of the acrylic resin that can be included in the back contact film. As the other monomer component, only one kind may be used, or two or more kinds may be used. In order to properly express the basic properties such as the adhesiveness due to the hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group in the pressure-sensitive adhesive layer, all monomer components for forming the acrylic polymer are used. In the above, the total proportion of the above-mentioned other monomer components is preferably 60% by mass or less, and more preferably 40% by mass or less.

The acrylic polymer may include a constituent unit derived from a polyfunctional monomer copolymerizable with the monomer component forming the acrylic polymer in order to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, penta. Erythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy(meth)acrylate (for example, polyglycidyl(meth)acrylate), polyester Examples thereof include monomers having a (meth)acryloyl group and another reactive functional group in the molecule such as (meth)acrylate and urethane (meth)acrylate. The polyfunctional monomers may be used alone or in combination of two or more. In order to properly express the basic properties such as the adhesiveness due to the hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group in the pressure-sensitive adhesive layer, all monomer components for forming the acrylic polymer are used. The proportion of the polyfunctional monomer in is preferably 40% by mass or less, and more preferably 30% by mass or less.

The acrylic polymer is obtained by subjecting one or more monomer components containing an acrylic monomer to polymerization. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization and suspension polymerization.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. The mass average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000. When the mass average molecular weight is 100,000 or more, the amount of low molecular weight substances in the pressure-sensitive adhesive layer tends to be small, and it is possible to further suppress contamination of the back contact film, semiconductor wafer, and the like.

The pressure-sensitive adhesive layer or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer may contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked to further reduce the low molecular weight substance in the pressure-sensitive adhesive layer. In addition, the mass average molecular weight of the acrylic polymer can be increased. Examples of the cross-linking agent include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol compounds, etc.), aziridine compounds, melamine compounds and the like. When a cross-linking agent is used, its amount is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta( Examples thereof include (meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers, and those having a molecular weight of about 100 to 30,000 are preferable. The content of the radiation-polymerizable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive forming the pressure-sensitive adhesive layer is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass of the base polymer. It is about part by mass. As the addition type radiation-curable pressure-sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

The radiation-curable pressure-sensitive adhesive is an intrinsic radiation-curable adhesive containing a polymer side chain having a functional group such as a radiation-polymerizable carbon-carbon double bond or a base polymer having a polymer main chain at the polymer main chain end. Also included are adhesives. When such an internal radiation curable pressure sensitive adhesive is used, there is a tendency that it is possible to suppress an unintended change over time in the pressure sensitive adhesive property due to the movement of the low molecular weight component in the formed pressure sensitive adhesive layer.

Acrylic polymers are preferred as the base polymer contained in the internal radiation curable pressure-sensitive adhesive. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer component having a first functional group is polymerized (copolymerized) to obtain an acrylic polymer. Then, a compound having a second functional group capable of reacting with the first functional group and a radiation-polymerizable carbon-carbon double bond is added to the acrylic polymer while maintaining the radiation-polymerizable property of the carbon-carbon double bond. There may be mentioned a method of conducting a condensation reaction or an addition reaction with respect to.

Examples of the combination of the first functional group and the second functional group include, for example, carboxy group and epoxy group, epoxy group and carboxy group, carboxy group and aziridyl group, aziridyl group and carboxy group, hydroxy group and isocyanate group, Examples thereof include an isocyanate group and a hydroxy group. Among these, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easy reaction tracking. Among them, it is technically difficult to produce a polymer having a highly reactive isocyanate group, and from the viewpoint of easy production and availability of an acrylic polymer having a hydroxy group, the first functional group is A combination in which it is a hydroxy group and the second functional group is an isocyanate group is preferred. Examples of the compound having an isocyanate group and a radiation-polymerizable carbon-carbon double bond, that is, a radiation-polymerizable unsaturated functional group-containing isocyanate compound include, for example, methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- Examples include α,α-dimethylbenzyl isocyanate. Moreover, as the acrylic polymer having a hydroxy group, those containing a constituent unit derived from the above-mentioned hydroxy group-containing monomer and an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether. Are listed.

The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, Examples include camphorquinone, halogenated ketones, acylphosphinoxides, acylphosphonates, and the like. Examples of the α-ketol compound include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, and 2-methyl-2-hydroxy. Examples include propiophenone and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl-1-[4-(methylthio)-phenyl]-2. -Morpholinopropan-1-one and the like. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compound include benzyl dimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of the benzophenone compound include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone and 2,4-diisopropyl. Thioxanthone and the like can be mentioned. The content of the photopolymerization initiator in the radiation curable pressure-sensitive adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

The heat-foamable pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands when heated. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic foaming agent include chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate; paratoluene. Hydrazine compounds such as sulfonyl hydrazide, diphenyl sulfone-3,3′-disulfonyl hydrazide, 4,4′-oxybis(benzenesulfonyl hydrazide), allyl bis(sulfonyl hydrazide); p-toluylenesulfonyl semicarbazide, 4,4′- Semicarbazide compounds such as oxybis(benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N,N'-dinitrosopentamethylenetetramine, N,N'-dimethyl- Examples thereof include N-nitroso compounds such as N,N'-dinitrosoterephthalamide. Examples of the heat-expandable microspheres include microspheres having a structure in which a substance that is easily gasified and expanded by heating is enclosed in a shell. Examples of the substance which is easily gasified and expanded by the heating include isobutane, propane, pentane and the like. The heat-expandable microspheres can be produced by encapsulating a substance that is easily gasified and expanded by heating into the shell-forming substance by a coacervation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting heat melting property or a substance capable of bursting by the action of thermal expansion of the encapsulating substance can be used. Examples of such a substance include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.

Examples of the non-adhesive strength-reducing pressure-sensitive adhesive layer include a pressure-sensitive pressure-sensitive adhesive layer. In addition, the pressure-sensitive adhesive layer has a form in which a pressure-sensitive adhesive layer formed from the radiation-curable adhesive described above with respect to the adhesive force-reducible adhesive layer has a certain adhesive force while being cured by irradiation with radiation in advance. An adhesive layer is included. As the pressure-sensitive adhesive for forming the non-reduced pressure-sensitive adhesive layer, one kind of pressure-sensitive adhesive may be used, or two or more kinds of pressure-sensitive adhesive may be used. Further, the entire pressure-sensitive adhesive layer may be the non-adhesive strength-reducing pressure-sensitive adhesive layer or a part thereof may be the non-adhesive-force-reducing pressure-sensitive adhesive layer. For example, when the pressure-sensitive adhesive layer has a single-layer structure, the pressure-sensitive adhesive layer as a whole may be the non-adhesiveness-reducing pressure-sensitive adhesive layer, or a specific portion of the pressure-sensitive adhesive layer (for example, a dicing frame attachment target). The region, which is the region outside the central region) is the non-adhesion-reducing pressure-sensitive adhesive layer, and the other region (for example, the divided region of the semiconductor wafer or the central region which is the target region for sticking the semiconductor wafer) is It may be an adhesive layer capable of reducing the adhesive strength. When the pressure-sensitive adhesive layer has a laminated structure, all the pressure-sensitive adhesive layers in the laminated structure may be non-adhesive strength-reducing pressure-sensitive adhesive layers, or some of the pressure-sensitive adhesive layers in the laminated structure have non-adhesive strength. It may be a reduced pressure-sensitive adhesive layer.

The pressure-sensitive adhesive layer (radiation-irradiated radiation-curable pressure-sensitive adhesive layer) obtained by previously curing the pressure-sensitive adhesive layer (radiation-unirradiated radiation-curable pressure-sensitive adhesive layer) formed from a radiation-curable pressure-sensitive adhesive is Even if the adhesive strength is reduced by irradiation, the adhesive strength due to the polymer component contained is exhibited, and it is possible to exert the minimum necessary adhesive strength for the adhesive layer of the dicing tape in the dicing step and the like. When using a radiation-cured radiation-curable pressure-sensitive adhesive layer, in the surface spreading direction of the pressure-sensitive adhesive layer, the entire pressure-sensitive adhesive layer may be a radiation-irradiated radiation-curable pressure-sensitive adhesive layer, and a part of the pressure-sensitive adhesive layer. It may be a radiation-cured pressure-sensitive adhesive layer that has been irradiated with radiation and another portion may be a radiation-curable pressure-sensitive adhesive layer that has not been irradiated with radiation. In the present specification, the “radiation-curable pressure-sensitive adhesive layer” means a pressure-sensitive adhesive layer formed from a radiation-curable pressure-sensitive adhesive, and a radiation-unirradiating radiation-irradiated radiation-curable pressure-sensitive adhesive layer and the pressure-sensitive adhesive. It includes both a radiation-cured radiation-curable pressure-sensitive adhesive layer after the agent layer has been cured by irradiation with radiation.

As the pressure-sensitive adhesive for forming the pressure-sensitive pressure-sensitive adhesive layer, a known or conventional pressure-sensitive pressure-sensitive adhesive can be used, and an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive containing an acrylic polymer as a base polymer is preferably used. You can When the pressure-sensitive adhesive layer contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer is a polymer containing a structural unit derived from a (meth)acrylic acid ester as the most structural unit in mass ratio. preferable. As the acrylic polymer, for example, the acrylic polymer described as the acrylic polymer that can be included in the above-mentioned addition type radiation curable pressure-sensitive adhesive can be adopted.

The pressure-sensitive adhesive layer or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer is a known or commonly used pressure-sensitive adhesive layer such as a crosslinking accelerator, a tackifier, an antioxidant, a colorant (pigment, dye, etc.) in addition to the above-mentioned components. The additive used for may be mix|blended. Examples of the colorant include compounds that are colored by irradiation with radiation. When the compound contains a compound that is colored by irradiation with radiation, only the irradiated portion can be colored. The compound which is colored by the irradiation of radiation is a compound which is colorless or light-colored before the irradiation of the irradiation but becomes colored by the irradiation of the irradiation, and examples thereof include a leuco dye. The amount of the compound colored by the irradiation of radiation is not particularly limited and can be appropriately selected.

The thickness of the pressure-sensitive adhesive layer is not particularly limited, but in the case where the pressure-sensitive adhesive layer is a pressure-sensitive adhesive layer formed from a radiation-curable pressure-sensitive adhesive, the adhesive strength of the pressure-sensitive adhesive layer before and after radiation curing of the pressure-sensitive adhesive layer From the viewpoint of achieving balance, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and further preferably 3 to 25 μm.

The back contact film of the present invention and the dicing tape-integrated back contact film of the present invention may have a separator on the back contact film surface. Specifically, for each back contact film of the present invention, or for each dicing tape-integrated back contact film, it may be in the form of a sheet having a separator, or the separator is elongated and a plurality of separators may be formed thereon. The back adhesion film or the plurality of dicing tape-integrated back adhesion films may be arranged, and the separator may be wound to form a roll. The separator is an element for covering and protecting the backside adhesive film of the present invention, and is peeled from the sheet when the backside adhesive film of the present invention or the dicing tape integrated backside adhesive film of the present invention is used. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a plastic film and a paper surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent.

The thickness of the separator is, for example, 10 to 200 μm, preferably 15 to 150 μm, and more preferably 20 to 100 μm. When the thickness is 10 μm or more, it is difficult for the separator to break due to cuts during processing. When the thickness is 200 μm or less, the dicing tape-integrated backside contact film can be more easily peeled from the separator when the substrates and the frame are bonded together.

[Manufacturing method of backside adhesion film]
The back contact film 10 which is one embodiment of the back contact film of the present invention is manufactured, for example, as follows.

In the production of the back contact film 10 shown in FIG. 1, first, the adhesive layer (layer to be the inner layer) 11 and the laser mark layer (A layer) 12 are produced individually. The adhesive layer 11 is formed by applying a resin composition (adhesive composition) for forming the adhesive layer 11 on a separator to form a resin composition layer, and then removing solvent and curing by heating to obtain the resin composition. It can be produced by solidifying the material layer. In the production of the adhesive layer 11, the heating temperature is, for example, 90 to 150° C., and the heating time is, for example, 1 to 2 minutes. Examples of the coating method of the resin composition include roll coating, screen coating, and gravure coating. On the other hand, the laser mark layer 12 solidifies the resin composition layer by applying a resin composition for forming the laser mark layer 12 on a separator to form a resin composition layer, and then removing solvent and curing by heating. It can be produced by In producing the laser mark layer 12, the heating temperature is, for example, 90 to 160° C., and the heating time is, for example, 2 to 4 minutes. As described above, the adhesive layer 11 and the laser mark layer 12 can be manufactured in a form in which they each include a separator. Then, the exposed surfaces of the adhesive layer 11 and the laser mark layer 12 are bonded to each other, and then punching is performed so as to obtain a desired plane projection shape and plane projection area. The back contact film 10 having the laminated structure of is produced.

[Manufacturing method of backside adhesive film with integrated dicing tape]
The dicing tape-integrated backside contact film 1, which is an embodiment of the dicing tape-integrated backside contact film of the present invention, is manufactured, for example, as follows.

The dicing tape 20 of the backside adhesive film 1 with integrated dicing tape shown in FIG. 3 can be produced by providing the adhesive layer 22 on the prepared base material 21. For example, the resin base material 21 can be obtained by forming a film by a known or common film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. The base material 21 is surface-treated as necessary. In the formation of the pressure-sensitive adhesive layer 22, for example, after preparing a pressure-sensitive adhesive composition for forming a pressure-sensitive adhesive layer, first, the composition is applied on the base material 21 or the separator to form the pressure-sensitive adhesive composition layer. To do. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. Next, in this pressure-sensitive adhesive composition layer, the solvent is removed as necessary by heating, and a crosslinking reaction is caused if necessary. The heating temperature is, for example, 80 to 150° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 22 is formed on the separator, the pressure-sensitive adhesive layer 22 with the separator is attached to the base material 21, and then the target plane projection shape (for example, a shape similar to the back contact film 10 is formed). Punching is performed so that the shape and the projected area of the plane are obtained, and then the separator is peeled off. As a result, the dicing tape 20 having a laminated structure of the base material 21 and the adhesive layer 22 is produced.

Next, the laser mark layer 12 side of the back contact film 10 obtained above is attached to the adhesive layer 22 side of the dicing tape 20. The bonding temperature is, for example, 10 to 50° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm. When the pressure-sensitive adhesive layer 22 is the radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or after the bonding, the base material 21 may be irradiated. Radiation such as ultraviolet rays may be applied to the adhesive layer 22 from the side. Alternatively, such radiation irradiation may not be performed in the manufacturing process of the dicing tape-integrated backside contact film 1 (in this case, the adhesive layer 22 is radiation-cured during the use of the dicing tape-integrated backside contact film 1). Is possible). When the pressure-sensitive adhesive layer 22 is a UV-curable type, the UV irradiation amount for curing the pressure-sensitive adhesive layer 22 is, for example, 50 to 500 mJ/cm ² . In the dicing tape-integrated backside contact film 1, the region (irradiation region R) where the pressure-sensitive adhesive layer 22 is irradiated as an adhesive force reduction measure is, for example, as shown in FIG. It is an area excluding its peripheral portion in the fitting area.

As described above, for example, the backside contact film 10 of the present invention shown in FIG. 1 and the dicing tape integrated backside contact film 1 shown in FIG. 3 can be produced.

[Semiconductor Device Manufacturing Method]
A semiconductor device can be manufactured using the dicing tape-integrated backside contact film of the present invention. Specifically, a step of attaching the back surface of the work to the back adhesion film side (particularly the adhesive layer side) in the dicing tape-integrated back adhesion film of the present invention (pasting step), and cutting an object including at least the work A semiconductor device can be manufactured by a manufacturing method including a step of obtaining individualized semiconductor chips (dicing step). 4 to 7 show steps in a method for manufacturing a semiconductor device using the dicing tape-integrated backside contact film 1 shown in FIG.

(Pasting process)
In the attaching step, as a work to be attached to the backside adhesive film side (particularly to the adhesive layer side) of the dicing tape-integrated type backside adhesive film of the present invention, a semiconductor wafer or a plurality of semiconductor chips may have a backside and/or side surface made of resin. Examples include a sealed body and the like. Then, for example, as shown in FIG. 4A, the semiconductor wafer 40 held on the wafer processing tape T1 is attached to the backside adhesive film 10 (particularly the adhesive layer 11) of the present invention of the backside adhesive film 1 integrated with a dicing tape. ) To paste. Bumps (not shown) for flip-chip mounting are provided on the surface of the semiconductor wafer 40. Thereafter, as shown in FIG. 4B, the wafer processing tape T1 is peeled off from the semiconductor wafer 40.

(Thermosetting process)
When the backside adhesive film of the present invention has a thermosetting adhesive layer, it is preferable to have a step (thermosetting step) of thermosetting the adhesive layer in the backside adhesive film after the attaching step. For example, in the thermosetting step, heat treatment for thermosetting the adhesive layer 11 is performed. The heating temperature is preferably 80 to 200°C, more preferably 100 to 150°C. The heating time is preferably 0.5 to 5 hours, more preferably 1 to 3 hours. Specifically, the heat treatment is performed at 120° C. for 2 hours, for example. In the thermosetting step, the adhesive force between the backside adhesive film 10 of the present invention and the semiconductor wafer 40 of the dicing tape integrated backside adhesive film 1 is increased by the thermosetting of the adhesive layer 11, and the dicing tape integrated backside adhesive film 1 and The back surface adhesion film 10 of the present invention has an increased ability to fix and hold semiconductor wafers. When the backside adhesive film of the present invention does not have a thermosetting adhesive layer, it may be baked for several hours in the range of 50 to 100° C., which improves the wettability of the adhesive layer interface. However, the holding force for fixing the semiconductor wafer is increased.

(Laser marking process)
The method for manufacturing a semiconductor device described above preferably includes a step of irradiating the laser mark layer with a laser from the base material side of the dicing tape to perform laser marking (laser marking step). When the heat curing step is performed, the laser marking step is preferably performed after the heat curing step. Specifically, in the laser marking step, for example, laser marking is performed by irradiating the laser mark layer 12 with a laser from the side of the base material 21 of the dicing tape 20. By this laser marking process, various information such as character information and graphic information can be engraved on each semiconductor chip. In the laser marking process, it is possible to collectively and efficiently perform laser marking on a plurality of semiconductor chips in one laser marking process. Examples of the laser used in the laser marking step include a gas laser and a solid laser. Examples of the gas laser include a carbon dioxide gas laser (CO ₂ laser) and an excimer laser. Examples of solid-state lasers include Nd:YAG lasers.

(Dicing process)
In the dicing step, as shown in FIG. 5, for example, a frame (dicing frame) 51 for pressing and fixing the dicing tape on the pressure-sensitive adhesive layer 22 of the backing adhesive film with integrated dicing tape 1 is attached to hold the dicing device. After being held by the tool 52, cutting is performed by the dicing blade included in the dicing device. In FIG. 5, the cutting location is schematically represented by a thick line. In the dicing step, the semiconductor wafer is diced into individual semiconductor chips 41, and at the same time, the backside contact film 10 of the present invention of the backside contact film 1 integrated with the dicing tape is cut into small pieces of film 10′. Thereby, the semiconductor chip 41 with the film 10′, that is, the semiconductor chip 41 with the film 10′ is obtained.

(Radiation irradiation process)
The method for manufacturing a semiconductor device described above may include a step of irradiating the pressure-sensitive adhesive layer with radiation from the base material side (radiation irradiation step). When the pressure-sensitive adhesive layer of the dicing tape is a layer formed by a radiation-curable pressure-sensitive adhesive, instead of the above-mentioned radiation irradiation in the manufacturing process of the dicing tape-integrated backside adhesion film, after the above-mentioned dicing step, Radiation such as ultraviolet rays may be applied to the pressure-sensitive adhesive layer from the base material side. The irradiation amount is, for example, 50 to 500 mJ/cm ² . The region (irradiation region R shown in FIG. 3) in the dicing tape-integrated backside adhesive film where irradiation is performed as a measure for reducing the adhesive strength of the pressure-sensitive adhesive layer is, for example, the periphery of the backside adhesive film bonded region in the pressure-sensitive adhesive layer. This is an area excluding parts.

(Pickup process)
The method for manufacturing a semiconductor device preferably includes a step of picking up a semiconductor chip with a film (pickup step). The above-mentioned pickup step includes, for example, a cleaning step of cleaning the semiconductor chip 41 side of the dicing tape 20 with the semiconductor chip 41 with the film 10′ using a cleaning liquid such as water, and a separation distance between the semiconductor chips 41 with the film 10′. If necessary, the expanding step for expanding may be performed. For example, as shown in FIG. 6, the semiconductor chip 41 with the film 10 ′ is picked up from the dicing tape 20. For example, in a state where the dicing tape 20 with the dicing frame 51 is held by the holder 52 of the apparatus, the semiconductor chip 41 with the film 10 ′ to be picked up, the pin member 53 of the pickup mechanism on the lower side of the dicing tape 20 in the drawing. Is lifted and pushed up via the dicing tape 20, and then suction-held by the suction jig 54. In the pickup process, the push-up speed of the pin member 53 is, for example, 1 to 100 mm/sec, and the push-up amount of the pin member 53 is, for example, 50 to 3000 μm.

(Flip chip mounting process)
It is preferable that the method for manufacturing a semiconductor device includes a step of flip-chip mounting the semiconductor chip 41 with a film after a pickup step (flip-chip step). For example, as shown in FIG. 7, the semiconductor chip 41 with the film 10 ′ is flip-chip mounted on the mounting substrate 61. Examples of the mounting board 61 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. By flip-chip mounting, the semiconductor chip 41 is electrically connected to the mounting substrate 61 via the bumps 62. Specifically, the substrate (electrode pad) (not shown) that the semiconductor chip 41 has on the circuit formation surface side and the terminal portion (not shown) that the mounting substrate 61 has are electrically connected via the bump 62. It The bump 62 is, for example, a solder bump. Further, a thermosetting underfill agent 63 is interposed between the chip 41 and the mounting substrate 61.

As described above, a semiconductor device can be manufactured using the dicing tape-integrated backside contact film of the present invention.

Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.

Example 1
(Preparation of laser mark layer)
90 parts by mass of acrylic resin (trade name “Taisan Resin SG-P3”, manufactured by Nagase Chemtex Co., Ltd.) and 40 parts by mass of epoxy resin E ₁ (trade name “KI-3000-4”, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E ₂ (trade name “JER YL980”, manufactured by Mitsubishi Chemical Co., Ltd.), 100 parts by mass of phenol resin (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), and silica filler ( Product name “SO-25R”, average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd. 220 parts by mass, and carbon black (product name “#20”, carbon black, manufactured by Mitsubishi Chemical Co., Ltd.) 3 parts by mass And 10 parts by mass of a thermosetting catalyst (trade name "CUREZOL 2PHZ", manufactured by Shikoku Chemicals Co., Ltd.) were added to and mixed with methyl ethyl ketone to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied to the silicone release treated surface of the PET separator (thickness 50 μm) having the surface subjected to the silicone release treatment using an applicator to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes for desolvation and thermosetting to prepare a laser mark layer (thermosetting layer) having a thickness of 17 μm on the PET separator.

(Preparation of adhesive layer)
90 parts by mass of acrylic resin (trade name “Taisan Resin SG-P3”, manufactured by Nagase Chemtex Co., Ltd.) and 40 parts by mass of epoxy resin E ₁ (trade name “KI-3000-4”, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E ₂ (trade name “JER YL980”, manufactured by Mitsubishi Chemical Co., Ltd.), 100 parts by mass of phenol resin (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), and silica filler ( Product name “SO-25R”, average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd. 220 parts by mass, and carbon black (product name “#20”, carbon black, manufactured by Mitsubishi Chemical Corporation) 20 parts by mass. Was added to and mixed with methyl ethyl ketone to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied to the silicone release treated surface of the PET separator (thickness 50 μm) having the surface subjected to the silicone release treatment using an applicator to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and an adhesive layer having a thickness of 8 μm was produced on the PET separator.

The laser mark layer on the PET separator produced as described above and the adhesive layer on the PET separator were attached using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded together under the conditions of a temperature of 100° C. and a pressure of 0.6 MPa. As described above, the back contact film of Example 1 was produced. The laser mark layer is the outermost layer when the back surface of the semiconductor is adhered, and the adhesive layer is the inner layer.

Example 2
(Preparation of laser mark layer)
90 parts by mass of acrylic resin (trade name “Taisan Resin SG-P3”, manufactured by Nagase Chemtex Co., Ltd.) and 40 parts by mass of epoxy resin E ₁ (trade name “KI-3000-4”, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E ₂ (trade name “JER YL980”, manufactured by Mitsubishi Chemical Co., Ltd.), 100 parts by mass of phenol resin (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), and silica filler ( 220 parts by mass of trade name “SO-25R”, average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd., and visible light absorbing black dye (trade name “OIL BLACK BS”, manufactured by Orient Chemical Industry Co., Ltd.) 3 10 parts by mass of a thermosetting catalyst (trade name "CUREZOL 2PHZ", manufactured by Shikoku Kasei Kogyo Co., Ltd.) were added to and mixed with methyl ethyl ketone to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied to the silicone release treated surface of the PET separator (thickness 50 μm) having the surface subjected to the silicone release treatment using an applicator to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes for desolvation and thermosetting to prepare a laser mark layer (thermosetting layer) having a thickness of 17 μm on the PET separator.

(Preparation of adhesive layer)
90 parts by mass of acrylic resin (trade name “Taisan Resin SG-P3”, manufactured by Nagase Chemtex Co., Ltd.) and 40 parts by mass of epoxy resin E ₁ (trade name “KI-3000-4”, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E ₂ (trade name “JER YL980”, manufactured by Mitsubishi Chemical Co., Ltd.), 100 parts by mass of phenol resin (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), and silica filler ( Trade name "SO-25R", average particle size: 0.5 [mu]m, manufactured by Admatechs Co., Ltd.) 220 parts by mass, and infrared absorbing dye (phenylenediamine dye, maximum absorption wavelength: 940 nm) 50 parts by mass in methyl ethyl ketone. The mixture was added and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied to the silicone release treated surface of the PET separator (thickness 50 μm) having the surface subjected to the silicone release treatment using an applicator to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and an adhesive layer having a thickness of 8 μm was produced on the PET separator.

The laser mark layer on the PET separator produced as described above and the adhesive layer on the PET separator were attached using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded together under the conditions of a temperature of 100° C. and a pressure of 0.6 MPa. As described above, the back contact film of Example 2 was produced. The laser mark layer is the outermost layer when the back surface of the semiconductor is adhered, and the adhesive layer is the inner layer.

Example 3
The laser mark layer on the PET separator prepared in Example 2 and the adhesive layer on the PET separator prepared in Example 1 were attached using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded together under the conditions of a temperature of 100° C. and a pressure of 0.6 MPa. As described above, the back contact film of Example 3 was produced. The laser mark layer is the outermost layer when adhered to the back surface of the semiconductor, and the adhesive layer is the inner layer.

Comparative Example 1
(Preparation of adhesive layer)
90 parts by mass of acrylic resin (trade name “Taisan Resin SG-P3”, manufactured by Nagase Chemtex Co., Ltd.) and 40 parts by mass of epoxy resin E ₁ (trade name “KI-3000-4”, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E ₂ (trade name “JER YL980”, manufactured by Mitsubishi Chemical Co., Ltd.), 100 parts by mass of phenol resin (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), and silica filler ( 220 parts by mass of trade name "SO-25R", average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd.) were added to and mixed with methyl ethyl ketone to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied to the silicone release treated surface of the PET separator (thickness 50 μm) having the surface subjected to the silicone release treatment using an applicator to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and an adhesive layer having a thickness of 8 μm was produced on the PET separator.

The laser mark layer on the PET separator produced in Example 1 and the adhesive layer on the PET separator produced as described above were attached using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded together under the conditions of a temperature of 100° C. and a pressure of 0.6 MPa. As described above, the back contact film of Comparative Example 1 was produced. The laser mark layer is the outermost layer when the back surface of the semiconductor is adhered, and the adhesive layer is the inner layer.

Comparative example 2
(Preparation of laser mark layer)
90 parts by mass of acrylic resin (trade name “Taisan Resin SG-P3”, manufactured by Nagase Chemtex Co., Ltd.) and 40 parts by mass of epoxy resin E ₁ (trade name “KI-3000-4”, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E ₂ (trade name “JER YL980”, manufactured by Mitsubishi Chemical Co., Ltd.), 100 parts by mass of phenol resin (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), and silica filler ( 220 parts by mass of product name "SO-25R", average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd., and 10 parts by mass of thermosetting catalyst (product name "Curesol 2PHZ", manufactured by Shikoku Chemicals Co., Ltd.) , Methyl ethyl ketone, and mixed to obtain a resin composition having a solid content concentration of 28 mass %. Next, the resin composition was applied to the silicone release treated surface of the PET separator (thickness 50 μm) having the surface subjected to the silicone release treatment using an applicator to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes for desolvation and thermosetting to prepare a laser mark layer (thermosetting layer) having a thickness of 17 μm on the PET separator.

The laser mark layer on the PET separator produced as described above and the adhesive layer on the PET separator produced in Example 1 were attached using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded together under the conditions of a temperature of 100° C. and a pressure of 0.6 MPa. As described above, the back contact film of Comparative Example 2 was produced. The laser mark layer is the outermost layer when the back surface of the semiconductor is adhered, and the adhesive layer is the inner layer.

<Evaluation>
The following evaluations were carried out on the back contact films obtained in Examples and Comparative Examples or each layer constituting the back contact films. The results are shown in Table 1.

(1) Transmittance at a wavelength of 1300 nm, light-shielding property The backside adhesive films obtained in Examples and Comparative Examples were integrated into an ultraviolet-visible near-infrared spectrophotometer (trade name "V-670", manufactured by JASCO Corporation). The transmittance spectrum was measured using a sphere unit. The light-shielding property was evaluated as ◯ when the transmittance at a wavelength of 1300 nm was less than 20%, and as x when the transmittance was 20% or more.

(2) 532 nm Absorbance The back-contact films obtained in Examples and Comparative Examples were transmitted using an integrating sphere unit of an ultraviolet-visible near-infrared spectrophotometer (trade name "V-670", manufactured by JASCO Corporation). The rate (absorbance) spectrum was measured, and the absorbance at a wavelength of 532 nm was calculated.

(3) Laser Marking Property The backside adhesive films obtained in Examples and Comparative Examples were attached to a dicing tape to prepare a dicing tape-integrated backside adhesive film, and the backside adhesive film was formed through the dicing tape with a green laser having a wavelength of 532 nm. Printed. Then, when the printed characters satisfy both the criteria that they are easily visible (contrast is clear) in dark field observation using a microscope and that air bubbles do not occur, at least either: The case where the standard was not satisfied was evaluated as x.

1 Dicing Tape Integrated Back Adhesive Film 10 Back Adhesive Film 11 of the Present Invention Adhesive Layer (Layer to be Inner Layer)
12 Laser mark layer (A layer)
20 Dicing Tape 21 Base Material 22 Adhesive Layer 30 Separator 40 Semiconductor Wafer 41 Semiconductor Chip

Claims (6)

A semiconductor backside adhesion film used by closely adhering to the semiconductor backside
The layer that becomes the outermost layer when the semiconductor back surface is in contact contains a visible light absorber,
One or more layers in the semiconductor backside adhesive film contain an infrared absorbing agent having a maximum absorption wavelength at 850 nm or more in a wavelength range of 500 to 2000 nm,
However, when the visible light absorbing agent can absorb infrared rays together with visible light, the infrared absorbing agent that can be contained in the outermost layer is an infrared absorbing agent different from the visible light absorbing agent, semiconductor back surface adhesion the film. 2. The semiconductor according to claim 1, which has a multilayer structure including a layer to be the outermost layer and a layer containing the infrared absorbing agent, which is an inner layer located between the outermost layer and the semiconductor element when the semiconductor back surface is in close contact. Back adhesion film. The semiconductor backside adhesion film according to claim 1 or 2, wherein the visible light absorber is carbon black. The semiconductor backside adhesion film according to claim 1 or 2, wherein the visible light absorbing agent is a visible light absorbing dye. The semiconductor backside adhesion film according to any one of claims 1 to 4, wherein the infrared absorber is carbon black. 5. The semiconductor backside adhesion film according to any one of 1 to 4, wherein the infrared absorbing agent is an infrared absorbing dye.

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