TW201930511A - Semiconductor back surface adhering film - Google Patents

Abstract

Provided is a semiconductor back surface adhering film which has more excellent infrared shielding properties. A semiconductor back surface adhering film according to the present invention has a semiconductor back surface adhering layer (A) which has an absorbance of 1.0 or more in a wavelength range of 1,000-1,800 nm under the condition such that the thickness thereof is 17 [mu]m. Alternatively, a semiconductor back surface adhering film 10 according to the present invention has a semiconductor back surface adhering layer (A) which has an absorbance of 1.0 or more in a wavelength range of 1,300-1,800 nm under the condition such that the thickness thereof is 17 [mu]m. The semiconductor back surface adhering layer (A) may contain a dye which has a maximum absorption wavelength of 850 nm or more in the wavelength range of 500-2,000 nm. In addition, the semiconductor back surface adhering layer (A) may contain a pigment which has a maximum absorption wavelength of 850 nm or more in the wavelength range of 500-2,000 nm.

Description

Semiconductor back contact film

This invention relates to a semiconductor backside adhesion film. More particularly, the present invention relates to a semiconductor backside adhesion film that can be used in the fabrication of semiconductor devices.

In recent years, a flip-chip type semiconductor device in which a semiconductor element such as a semiconductor wafer is mounted on a substrate by flip chip bonding has been widely used. In the flip-chip type semiconductor device, a semiconductor back surface adhesion film is used as a film for forming a protective film on the back surface of the semiconductor element in order to prevent damage of the semiconductor element (see Patent Documents 1 and 2).
[Previous Technical Literature]
[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-151360
[Patent Document 2] International Publication No. 2014/092200

[The problem that the invention wants to solve]

Previous semiconductor backside films have been formulated with a colorant to impart marking information by laser marking, and thereby have a light blocking property. However, in recent years, the thin layer of the enamel layer has progressed. Along with this, thin film formation is also required for the semiconductor back surface adhesion film. However, there is a problem that the wavelength of the transmitted light increases from infrared rays to visible light if the layer is thinned. Further, in the case of a semiconductor back surface adhesion film, when there are many coloring agents having visible light absorption for laser marking, there are many people who do not have absorption in the near-infrared, and there are also thin films in addition to transmitting infrared rays. The problem of reduced light blocking. When the light-shielding property of the semiconductor back surface adhesion film is inferior, light is easily transmitted, and therefore, light is transmitted to cause adverse effects such as noise on the circuit surface of the semiconductor, or the circuit surface is visible by using an infrared microscope or the like. Maintain confidentiality.

The present invention has been made in view of the above problems, and an object thereof is to provide a semiconductor back surface adhesion film which is more excellent in infrared shielding properties.
[Technical means to solve the problem]

The inventors of the present invention conducted intensive studies to achieve the above object, and as a result, found a semiconductor back surface adhesion film having a semiconductor back surface adhesion layer having an absorbance of 1.0 or more in a wavelength region of 1000 to 1800 nm under a thickness of 17 μm. The infrared shielding property is more excellent. Further, the inventors of the present invention conducted intensive studies to achieve the above object, and as a result, found that the semiconductor back surface of the semiconductor back surface adhesion layer having an absorbance of 1.0 or more in a wavelength region of 1300 to 1800 nm under a thickness of 17 μm is closely adhered. The film can provide excellent infrared shielding properties. The present invention has been completed based on these findings.

That is, the present invention provides, in a first aspect thereof, a semiconductor back surface adhesion film having a semiconductor back surface adhesion layer (A) having an absorbance of 1.0 or more in a wavelength region of 1000 to 1800 nm under a thickness of 17 μm. Further, in the second aspect of the invention, there is provided a semiconductor back surface adhesion film having a semiconductor back surface adhesion layer (A) having an absorbance of 1.0 or more in a wavelength region of 1300 to 1800 nm under a thickness of 17 μm. The semiconductor back surface adhesion film of such a configuration can be used in the manufacturing process of a semiconductor device.

As described above, the semiconductor back surface adhesion film of the first aspect of the present invention has a semiconductor back surface adhesion layer (A) having an absorbance of 1.0 or more in a wavelength region of 1000 to 1800 nm under a thickness of 17 μm. As described above, the semiconductor back surface adhesion film of the second aspect of the present invention has a semiconductor back surface adhesion layer (A) having an absorbance of 1.0 or more in a wavelength region of 1300 to 1800 nm under a thickness of 17 μm. The semiconductor back surface adhesion film of the present invention having such a configuration can sufficiently absorb infrared rays, and therefore has excellent infrared shielding properties.

The semiconductor back surface adhesion layer (A) may also contain a dye having a maximum absorption wavelength of 850 nm or more in a wavelength region of 500 to 2000 nm. With such a configuration, it is possible to easily obtain a semiconductor back surface adhesion layer having an absorbance of 1.0 or more in a wavelength region of 1000 to 1800 nm or a wavelength region of 1300 to 1800 nm of 17 μm.

The semiconductor back surface adhesion layer (A) may also contain a pigment having a maximum absorption wavelength of 850 nm or more in a wavelength region of 500 to 2000 nm. With such a configuration, it is possible to easily obtain a semiconductor back surface adhesion layer having an absorbance of 1.0 or more in a wavelength region of 1000 to 1800 nm or a wavelength region of 1300 to 1800 nm of 17 μm.

In the semiconductor back surface adhesion film of the present invention, it is preferable that the semiconductor back surface adhesion layer (A) contains a visible light absorbing dye and/or a semiconductor back surface adhesion layer (B1) containing a visible light absorbing dye. The semiconductor back surface adhesion film of the present invention having such a configuration is excellent in infrared shielding properties, and can also impart imprint information by laser marking.

The semiconductor back surface adhesion layer (A) is preferably a ratio of a minimum value to a maximum value (minimum value/maximum value) of the absorbance in a wavelength region of 1000 to 1800 nm at a thickness of 17 μm of 0.4 to 1.0. With such a configuration, the semiconductor back surface adhesion film of the present invention can equally shield infrared rays of a wide range of wavelengths.

Preferably, the semiconductor back surface adhesion film of the present invention has the semiconductor back surface adhesion layer (A) containing a filler and/or a pigment, and/or a semiconductor back surface adhesion layer (B2) containing a filler and/or a pigment, and the filler and/or the filler and/or The above pigment has an average particle diameter of 10 μm or less. With such a configuration, the semiconductor back surface adhesion film of the present invention suppresses the diffuse reflection of the light irradiated at the time of the laser mark, and is excellent in infrared shielding property, and the marking information can be more clearly imparted by the laser mark.
[Effects of the Invention]

The semiconductor back surface adhesion film of the present invention is more excellent in infrared shielding properties. Therefore, by using the semiconductor back surface adhesion film of the present invention, even when the semiconductor wafer is thinned, it is possible to suppress the adverse effect on the circuit surface of the semiconductor when the infrared rays are irradiated, or to visualize the circuit surface.

[Semiconductor back contact film]
In the first embodiment, the semiconductor back surface adhesion film of the present invention (may be referred to simply as "back surface adhesion film") has an absorbance of 1.0 or more in a wavelength region of 1000 to 1800 nm under a thickness of 17 μm. The back surface of the semiconductor is in contact with the layer. In the second embodiment, the semiconductor back surface adhesion film of the present invention has a semiconductor back surface adhesion layer having an absorbance of 1.0 or more in a wavelength region of 1300 to 1800 nm under a thickness of 17 μm. In addition, in the present specification, the term "surface" of a semiconductor (workpiece) means a surface on which a workpiece is formed by flip-chip mounting, and the "back surface" means that the opposite side of the surface is not convex. The face of the block. Further, the "back surface adhesion film" refers to a film that is used in close contact with the back surface of the semiconductor, and includes a film (semiconductor inner surface protection film) for forming a protective film on the back surface (so-called inner surface) of the semiconductor wafer. In addition, in the present specification, the "semiconductor back surface adhesion layer" is a layer that is in close contact with the back surface of the workpiece after being mounted on the semiconductor device, and does not include the following dicing tape or separator, which may be peeled off during the manufacturing process of the semiconductor device. Layer. Further, in the present specification, the absorbance in the wavelength region of 1000 to 1800 nm in the thickness of 17 μm may be 1.0 or more, or in the wavelength region of at least 1300 to 1800 nm in the thickness of 17 μm. The semiconductor back surface adhesion layer having an absorbance of 1.0 or more is referred to as a "semiconductor back surface adhesion layer (A)".

The back surface adhesion film of the present invention may be a single layer structure including the semiconductor back surface adhesion layer (A), or may have a multilayer structure. For example, the back surface adhesion film of the present invention may have a semiconductor back surface adhesion layer other than the semiconductor back surface adhesion layer (A). In the present specification, the semiconductor back surface adhesion layer which the back surface adhesion film of the present invention other than the semiconductor back surface adhesion layer (A) may have is referred to as "semiconductor back surface adhesion layer (B)".

In the first embodiment, the back surface adhesion film of the present invention has a semiconductor back surface adhesion layer (A) having an absorbance of 1.0 or more in a wavelength region of 1000 to 1800 nm under a thickness of 17 μm. That is, in the absorption spectrum of the semiconductor back surface adhesion layer (A) under the condition of a thickness of 17 μm, the minimum value of the absorbance in the wavelength region of 1000 to 1800 nm is 1.0 or more. In the second embodiment, the back surface adhesion film of the present invention has a semiconductor back surface adhesion layer (A) having an absorbance of 1.0 or more in a wavelength region of 1300 to 1800 nm under a thickness of 17 μm. That is, in the absorption spectrum of the semiconductor back surface adhesion layer (A) under the condition of a thickness of 17 μm, the minimum value of the absorbance in the wavelength region of 1300 to 1800 nm is 1.0 or more. By having such a semiconductor back surface adhesion layer (A), the back surface adhesion film of the present invention can sufficiently absorb infrared rays. Therefore, even when the semiconductor wafer is thinned, it is possible to obtain an adhesion back surface excellent in infrared shielding property. Layer wafer. The absorption spectrum including the wavelength region of 1000 to 1800 nm or the above-described 1300 to 1800 nm can be measured using a known spectrophotometer capable of measuring the absorbance in the infrared wavelength region. Further, by the selection of the following colorant as a component in the semiconductor back surface adhesion layer (A) or the adjustment of the amount of the colorant, for example, for the semiconductor back surface adhesion layer (A), control can be performed to ensure minimum absorbance. The wavelength region of 1.0 or more is relatively narrow 1300 to 1800 nm or relatively wide 1000 to 1800 nm.

Preferably, the semiconductor back surface adhesion layer (A) has a ratio of the minimum value to the maximum value of the absorbance in the wavelength region of 1000 to 1800 nm at a thickness of 17 μm (minimum/maximum value) of 0.4 to 1.0, more preferably It is 0.5 to 1.0, and more preferably 0.8 to 1.0. When the ratio is 0.4 or more, the back-contact film of the present invention can equally shield infrared rays of a wide range of wavelengths.

(semiconductor back contact layer)
The semiconductor back surface adhesion layer (that is, the semiconductor back surface adhesion layer (A) and the semiconductor back surface adhesion layer (B)) of the back surface adhesion film of the present invention and the composition (resin composition) for forming the semiconductor back surface adhesion layer are preferably contained. Thermoplastic resin. When the semiconductor back surface adhesion layer has thermosetting properties, the semiconductor back surface adhesion layer and the resin composition may contain a thermosetting resin and a thermoplastic resin, or may contain a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to bond. In the case where the semiconductor back surface adhesion layer contains a thermoplastic resin having a thermosetting functional group, the above resin composition need not contain a thermosetting resin (epoxy resin or the like).

The thermoplastic resin in the adhesive layer on the back side of the semiconductor is, for example, a function of a binder. Examples of the thermoplastic resin include acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, and ethylene-acrylate. Copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamine resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, polyterephthalic acid A saturated polyester resin such as ethylene glycol (PET) or polybutylene terephthalate (PBT), a polyamidoximine resin, a fluororesin or the like. The thermoplastic resin may be used singly or in combination of two or more. The thermoplastic resin is preferably an acrylic resin from the viewpoint of having less ionic impurities and high heat resistance.

The acrylic resin contains a polymer derived from a structural unit of an acrylic monomer (a monomer component having a (meth) acrylonitrile group in a molecule) as a structural unit of a polymer. The acrylic resin is preferably a polymer containing a structural unit derived from a maximum of (meth) acrylate in a mass ratio. Further, the acrylic resin may be used alone or in combination of two or more. In addition, in the present specification, "(meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid" (either "acrylic acid" or "methacrylic acid" or both), and others the same.

The (meth) acrylate may, for example, be a hydrocarbon group-containing (meth) acrylate which may have an alkoxy group. Examples of the hydrocarbon group-containing (meth) acrylate include alkyl (meth)acrylate, cycloalkyl (meth)acrylate, and aryl (meth)acrylate. Examples of the alkyl (meth)acrylate include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, and third butyl ester of (meth)acrylic acid. , amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester Lauryl ester), tridecyl ester, tetradecyl ester, cetyl ester, octadecyl ester, eicosyl ester, and the like. Examples of the cycloalkyl (meth)acrylate include cyclopentyl (meth)acrylate and cyclohexyl ester. Examples of the aryl (meth)acrylate include phenyl ester of (meth)acrylic acid and benzyl ester. The (meth) acrylate having a hydrocarbyl group having an alkoxy group may be one in which one or more hydrogen atoms in the hydrocarbon group in the hydrocarbon group-containing (meth) acrylate are substituted with an alkoxy group, for example, Examples include 2-methoxymethyl (meth)acrylate, 2-methoxyethyl ester, 2-methoxybutyl ester and the like. The above-mentioned hydrocarbon group-containing (meth) acrylate having an alkoxy group may be used singly or in combination of two or more kinds.

The acrylic resin may contain a structural unit derived from another monomer component copolymerizable with a hydrocarbon group-containing (meth) acrylate having an alkoxy group for the purpose of modifying the cohesive force and heat resistance. Examples of the other monomer component include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, and a phosphate group-containing monomer. A functional group-containing monomer such as acrylamide or acrylonitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, butylene. Acid, etc. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and (meth)acrylic acid. 6-hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (meth)acrylic acid (4-hydroxymethyl) Cyclohexyl)methyl ester and the like. Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and methyl glycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, and (meth)acrylamide. Propanesulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloxynaphthalenesulfonic acid, and the like. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethyl decyl phosphate and the like. The other monomer components may be used alone or in combination of two or more.

The acrylic resin which can be contained in the semiconductor back surface adhesion layer is preferably selected from the group consisting of butyl acrylate and acrylic acid B from the viewpoints of the adhesion of the semiconductor back surface adhesion layer to the workpiece and the good cutting property at the time of dicing. a copolymer of a monomer in an ester, acrylonitrile, and acrylic acid.

In the case where the semiconductor back surface adhesion layer contains a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amine resin, an unsaturated polyester resin, and a polyurethane resin. Anthrone resin, thermosetting polyimine resin, and the like. The above thermosetting resins may be used alone or in combination of two or more. The content of the ionic impurities or the like which may cause corrosion of the semiconductor wafer tends to be small. Therefore, the thermosetting resin is preferably an epoxy resin. Further, as the curing agent for the epoxy resin, a phenol resin is preferred.

Examples of the epoxy resin include a bisphenol A epoxy resin, a bisphenol F epoxy resin, a bisphenol S epoxy resin, a brominated bisphenol A epoxy resin, and a hydrogenated bisphenol A ring. Oxygen resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, bismuth type epoxy resin, phenol novolak type epoxy resin, o-cresol novolac type epoxy resin, etc. A polyfunctional epoxy resin such as a phenol novolak type epoxy resin, a trishydroxyphenylmethane type epoxy resin, or a tetraphenol ethane type epoxy resin. The above epoxy resins may be used alone or in combination of two or more. Among them, a phenol novolak type epoxy resin, an o-cresol novolac type epoxy resin, a biphenyl type epoxy resin is preferable in terms of being highly reactive with a phenol resin as a curing agent and excellent in heat resistance. Resin, trishydroxyphenylmethane type epoxy resin, tetraphenol ethane type epoxy resin.

Examples of the phenol resin which can function as a curing agent for an epoxy resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a nonyl phenol novolac resin. A phenolic phenol resin such as a resin. Further, examples of the phenol resin include polyoxystyrene such as a novolac type phenol resin and polypara-hydroxystyrene. The phenol resin may be used singly or in combination of two or more.

From the viewpoint of sufficiently curing the epoxy resin and the phenol resin in the adhesion layer on the back surface of the semiconductor, the phenol resin is one equivalent of the epoxy group in the epoxy resin component, and the hydroxyl group in the phenol resin becomes It is preferably contained in an amount of from 0.5 to 2.0 equivalents, more preferably from 0.8 to 1.2 equivalents.

When the semiconductor back surface adhesion layer contains a thermosetting resin, the content ratio of the thermosetting resin is preferably from 5 to 60 by mass based on the total mass of the semiconductor back surface adhesion layer from the viewpoint of appropriately curing the semiconductor back surface adhesion layer. % is more preferably 10 to 50% by mass.

In the case where the semiconductor back surface adhesion layer contains a thermoplastic resin having a thermosetting functional group, as the thermoplastic resin, for example, a thermosetting functional group-containing acrylic resin can be used. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth) acrylate as a structural unit having the largest mass ratio. Examples of the hydrocarbon group-containing (meth) acrylate include a hydrocarbon group-containing (meth) acrylate exemplified as a hydrocarbon group-containing (meth) acrylate which forms an acrylic resin which is a thermoplastic resin which may be contained in the semiconductor back surface adhesion layer ( Methyl) acrylate. On the other hand, examples of the thermosetting functional group in the acrylic resin containing a thermosetting functional group include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among them, a glycidyl group or a carboxyl group is preferred. That is, as the acrylic resin containing a thermosetting functional group, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin is particularly preferable. In addition, it is preferable to include an acrylic resin containing a thermosetting functional group and a curing agent, and the curing agent is exemplified as a crosslinking agent which can be contained in the following radiation-curable adhesive for forming an adhesive layer. By. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol-based compound is preferably used as the curing agent, and for example, various phenol resins described above can be used.

When the semiconductor back surface adhesion layer contains a thermosetting resin, it is preferable to contain a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is contained, the curing reaction of the resin component can be sufficiently performed at the time of curing the adhesion layer on the back surface of the semiconductor, or the curing reaction rate can be increased. Examples of the thermosetting catalyst include an imidazole compound, a triphenylphosphine compound, an amine compound, and a trihaloborane compound. Examples of the imidazole-based compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole. , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methyl Imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methyl Imidazolyl-(1')]-ethyl-allotriazole, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-allotriazole, 2,4-Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-allotriazole, 2,4-diamino-6-[2 '-Methylimidazolyl-(1')]-ethyl-distributyl isocyanurate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4- Methyl-5-hydroxymethylimidazole and the like. Examples of the triphenylphosphine-based compound include triphenylphosphine, tributylphosphine, tris(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, diphenyltolylphosphine, and bromination. Tetraphenylphosphonium, methyltriphenylphosphonium, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, benzyltriphenylphosphonium chloride, and the like. The triphenylphosphine-based compound also includes a compound having a structure of a triphenylphosphine structure and a triphenylborane structure. Examples of such a compound include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-n-borate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihaloborane-based compound include trichloroborane and the like. The above-mentioned thermosetting catalyst may be contained alone or in combination of two or more.

The semiconductor back contact layer may also contain a filler. By containing a filler, it is easy to adjust the physical properties such as the modulus of elasticity, the strength of the drop point, and the elongation at break of the semiconductor back surface adhesion layer. Examples of the filler include inorganic fillers and organic fillers. Examples of the constituent material of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisker. , tantalum nitride, boron nitride, crystalline germanium dioxide, amorphous germanium dioxide, and the like. Further, examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, silver, copper, and nickel, or alloys, amorphous carbon, and graphite. Examples of the constituent material of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamidoximine, polyetheretherketone, polyetherimine, and polyesterimide. The above filler may be contained alone or in combination of two or more.

The filler may have various shapes such as a spherical shape, a needle shape, and a sheet shape. The average particle diameter of the above filler is preferably from 30 to 500 nm, more preferably from 40 to 400 nm, still more preferably from 50 to 300 nm. That is, the semiconductor back surface adhesion layer preferably contains a nano filler. When a nano-sized filler having such a particle diameter is used as a filler, the cut-off property is more excellent for the back-sealing film to be tableted. Further, when the semiconductor back surface adhesion layer contains a filler, the content of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and still more preferably 20% by mass or more. The content ratio is preferably 50% by mass or less, more preferably 47% by mass or less, still more preferably 45% by mass or less.

The semiconductor back surface adhesion layer may also contain a colorant. The above colorant may be a pigment or a dye. Examples of the colorant include a black coloring agent, a cyanine coloring agent, a magenta coloring agent, and a yellow coloring agent. In the case of the semiconductor back surface adhesion layer used as the laser marking layer described below, the information is imprinted by the laser mark, and the information is more excellent in visibility, and is used as the adhesive layer described below. In the case of the semiconductor back surface adhesion layer, high contrast is ensured between the marking portion on the laser marking layer side of the back adhesion film and the portion other than the marking portion on the laser marking layer, thereby achieving good visibility for the marking information. From the viewpoint, a black coloring agent is preferred. The coloring agent may be contained alone or in combination of two or more.

Examples of the black coloring agent include azo pigments such as carbon black, black lead, copper oxide, manganese dioxide, and azomethine azo black, nigrosine, ruthenium black, titanium black, and cyanine black. , activated carbon, ferrite, magnetite, chromium oxide, iron oxide, molybdenum disulfide, composite oxide black pigment, lanthanide organic black dye, azo organic black dye, and the like. Examples of the carbon black include furnace black, chimney black, acetylene black, hot carbon black, and lamp black. Examples of the black coloring agent include CI solvent black 3, the same 7, the same 22, the same 27, the same 29, the same 34, the same 43, the same 70; CI direct black 17, the same 19, the same 22, the same 32, Same as 38, the same 51, the same 71; CI acid black 1, the same 2, the same 24, the same 26, the same 31, the same 48, the same 52, the same 107, the same 109, the same 110, the same 119, the same 154; CI dispersion black 1, the same as 3, the same 10, the same 24; CI pigment black 1, the same 7 and so on.

Examples of the cyan-based coloring agent include CI solvent blue 25, the same 36, the same 60, the same 70, the same 93, the same 95; CI acid blue 6, the same 45; CI pigment blue 1, the same 2, the same 3, the same 15, the same 15:1, the same 15:2, the same 15:3, the same 15:4, the same 15:5, the same 15:6, the same 16, the same 17, the same 17:1, the same 18, the same 22, the same 25, the same 56, the same 60, the same 63, the same 65, the same 66; CI reduction blue 4; the same 60, CI pigment green 7, and so on.

Examples of the magenta coloring agent include CI solvent red 1, same as 3, same as 8, 23, 24, 25, 27, 30, 49, 52, 58 and 63. , with 82, with 83, with 84, with 100, with 109, with 111, with 121, with 122; CI disperse red 9; CI solvent purple 8, with 13, with 14, with 21, with 27; CI disperse purple 1; CI alkaline red 1, with 2, with 9, with 12, with 13, with 14, with 15, with 17, with 18, with 22, with 23, with 24, with 27, with 29, with 32, Same as 34, with 35, with 36, with 37, with 38, with 39, with 40; CI alkaline purple 1, with 3, with 7, with 10, with 14, with 15, with 21, with 25, with 26 Same as 27, 28, etc. Further, examples of the magenta coloring agent include CI Pigment Red 1, 2, 3, 4, 5, 6, 6, 7, 8, 9, 9, and 11, Same as 13, same as 14, with 15, with 16, with 17, with 18, with 19, with 21, with 22, with 23, with 30, with 31, with 32, with 37, with 38, with 39, with 40 , with 41, with 42, 48:1, 48:2, 48:3, 48:4, 49, 49:1, 50, 51, 52, 52:2 53:1, the same 54, the same 55, the same 56, the same 57:1, the same 58, the same 60, the same 60:1, the same 63, the same 63:1, the same 63:2, the same 64, the same 64:1 Same as 67, with 68, with 81, with 83, with 87, with 88, with 89, with 90, with 92, with 101, with 104, with 105, with 106, with 108, with 112, with 114, with 122 Same as 123, with 139, with 144, with 146, with 147, with 149, with 150, with 151, with 163, with 166, with 168, with 170, with 171, with 172, with 175, with 176, with 177, with 178, with 179, with 184, with 185, with 187, with 190, with 193, with 202, with 206, with 207, with 209, with 219, with 222, with 224, with 238, with 245; CI pigment purple 3, the same 9, the same 19, with 23, with 31, with 32, with 33, with 36, with 38, with 43, with 50; CI reduction red 1, with 2, same 10, with 13, with 15, with 23, with 29, with 35 and so on.

Examples of the yellow coloring agent include CI solvent yellow 19, the same 44, the same 77, the same 79, the same 81, the same 82, the same 93, the same 98, the same 103, the same 104, the same 112, the same 162; CI pigment Orange 31, the same 43; CI Pigment Yellow 1, with 2, with 3, with 4, with 5, with 6, with 7, with 10, with 11, with 12, with 13, with 14, with 15, with 16, Same as 17, with 23, with 24, with 34, with 35, with 37, with 42, with 53, with 55, with 65, with 73, with 74, with 75, with 81, with 83, with 93, with 94 , with 95, with 97, with 98, with 100, with 101, with 104, with 108, with 109, with 110, with 113, with 114, with 116, with 117, with 120, with 128, with 129, with 133, with 138, with 139, with 147, with 150, with 151, with 153, with 154, with 155, with 156, with 167, with 172, with 173, with 180, with 185, with 195; CI reduction yellow 1, the same as 3, the same 20 and so on.

As the coloring agent, a visible light absorbing dye is preferred. When a visible light absorbing dye is used as the coloring agent, bubbles are less likely to be generated between the back surface adhesive film and the dicing tape when the laser marking is carried out with the dicing tape, and the appearance after the laser marking is excellent. The visible light absorbing dye is preferably a dye having a maximum absorbance in a wavelength region of 350 to 700 nm. Examples of the visible light absorbing dye include an anthraquinone dye, an anthraquinone dye, an anthraquinone dye, a quinoline dye, a quinacridone dye, a benzimidazolone dye, an azo dye, and an isoindole. A phthalone dye, an isoporphyrin dye, a diterpene dye, a phthalocyanine dye, or the like. These visible light absorbing dyes may be used alone or in combination of two or more.

The semiconductor back contact layer may also contain other components as needed. Examples of the other components include a flame retardant, a decane coupling agent, and an ion scavenger. Examples of the flame retardant include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and complex metal hydroxides, phosphazene compounds, and trioxide. Antimony, antimony pentoxide, brominated epoxy resin, etc. Examples of the above decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropyl c. Methyl diethoxy decane, and the like. Examples of the ion scavenger include aluminum magnesium carbonate, barium hydroxide, aqueous cerium oxide (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), and zirconium phosphate of a specific structure (for example, East Asia Synthetic Co., Ltd.). Manufactured "IXE-100"), magnesium ruthenate (for example, "KYOWAAD 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (for example, "KYOWAAD 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds which form a complex with metal ions can also be used as ion scavengers. Examples of such a compound include a triazole compound, a tetrazole compound, and a bipyridine compound. Among these, a triazole-based compound is preferred from the viewpoint of stability of a complex formed between metal ions. Examples of such a triazole-based compound include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, and carboxybenzene. And triazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chlorobenzotriene Oxazole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-p-pentylbenzene Benzotriazole, 2-(2-hydroxy-5-th-octylphenyl)benzotriazole, 6-(2-benzotriazolyl)-4-trioctyl-6'- Third butyl-4'-methyl-2,2'-methylene bisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1-(1,2-dicarboxyl Ethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-third amyl-6-{(H-benzotriazole-1- Methyl}phenol, 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, 3-(2H-benzotriazol-2-yl)-5-(1 ,1-dimethylethyl)-4-hydroxy, 3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propene Octyl octanoate, 2-ethylhexyl-3-[3-t-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)propyl]propionate, 2- (2H-benzotriazol-2-yl)-6-(1- 1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-t-butyl Phenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-th-octylphenyl)-benzotriazole, 2-(3-third Butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-third-pentylphenyl)benzotriazole, 2- (2-hydroxy-3,5-di-tert-butylphenyl)-5-chloro-benzotriazole, 2-[2-hydroxy-3,5-di(1,1-dimethylbenzyl) )propyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethyl) Phenyl butyl) phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)propyl]-2H-benzotriazole, 3-[3-(2H-benzene And triazol-2-yl)-5-tert-butyl-4-hydroxypropyl]propionic acid methyl ester and the like. Further, a specific hydroxyl group-containing compound such as a hydroquinone compound or a hydroxyquinone compound or a polyphenol compound can also be used as the ion scavenger. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, indophenol, tannin, gallic acid, methyl gallate, and gallicol. The above other components may be used alone or in combination of two or more.

Further, the semiconductor back surface adhesion layer (A) is preferably an infrared absorber having a maximum absorption wavelength of 850 nm or more in a wavelength region of 500 to 2000 nm. When the infrared ray absorbing agent is contained, the semiconductor back surface adhesion layer (A) having an absorbance of 1.0 or more in a wavelength region of 1000 to 1800 nm and having a thickness of 1.0 or more can be easily obtained, or in a wavelength region of 1300 to 1800 nm. The semiconductor back surface adhesion layer (A) having an absorbance at a thickness of 17 μm of 1.0 or more. The above-mentioned infrared absorbing agent may be used alone or in combination of two or more.

Examples of the infrared ray absorbing agent include a pigment (infrared absorbing pigment) or a dye (infrared absorbing dye) having a maximum absorption wavelength of 850 nm or more in a wavelength region of 500 to 2000 nm. Examples of the infrared absorbing pigment include indium tin oxide, antimony tin oxide, zinc oxide, lead white, zinc antimony white, titanium oxide, chromium oxide, iron oxide, aluminum oxide, precipitated barium sulfate, barite powder, and lead. Dan, iron oxide red, yellow lead, zinc yellow (1 type of zinc yellow, 2 kinds of zinc yellow), ultramarine blue, Prussian blue (ferricyanide), zirconium ash, yellow chrome, chrome titanium yellow, chrome green, peacock Green, Victoria Green, iron blue, vanadium zirconium blue, chrome tin powder, ceramic red, squid powder, titanium black, tungsten compound, metal boride, etc. Further, examples thereof include metal oxides such as metal elements such as Co, Cr, Cu, Mn, Ru, Fe, Ni, Sn, Ti, Ag, and Al, and black pigments such as metal nitrides. The above infrared absorbing pigment may be used singly or in combination of two or more.

Examples of the infrared absorbing dye include a cyanine dye, a phthalocyanine dye, a naphtholphthalein dye, an iminium pigment, an ammonium quinone dye, a quinolinium dye, a pyrylpyrene dye, a Ni complex dye, and pyrrolopyrrole. A pigment, a copper complex, a quaterrylene dye, an azo dye, an anthraquinone dye, a diammonium dye, a squaraine dye, a porphyrin dye, or the like. The above infrared absorbing dye may be used singly or in combination of two or more.

The infrared absorber having a maximum absorption wavelength at 850 nm or more in the wavelength region of 500 to 2000 nm, wherein the infrared shielding property of the semiconductor back surface adhesion layer (A) is improved, and the average transmittance is lowered. Good for infrared absorbing pigments. Further, the average particle diameter of the infrared absorbing pigment is preferably 10 nm or more, more preferably 20 nm or more, still more preferably 40 nm or more. When the average particle diameter of the infrared absorbing pigment is 10 nm or more, infrared rays can be absorbed more efficiently, and the infrared shielding property of the semiconductor back surface adhesion layer (A) is further improved. Further, the average particle diameter is preferably 10 μm or less from the viewpoint of suppressing diffuse reflection of visible light for performing laser marking.

The thickness of the semiconductor back surface adhesion layer (A) is preferably 3 μm or more, and more preferably 5 μm or more from the viewpoint of sufficiently shielding infrared rays. The thickness of the semiconductor back surface adhesion layer (A) is, for example, 100 μm or less.

The back contact film of the present invention contains at least an adhesive layer having a bonding surface to the back surface of the workpiece. The subsequent layer may also be thermoset to be capable of being bonded to the back side of the workpiece, followed by thermal hardening followed by protection on the back side of the workpiece. Further, in the case where the adhesive layer is non-thermosetting which is not thermosetting, the adhesive layer can be protected by adhesion to the interface (wetability) or chemical bonding of the interface or the like, followed by adhesion to the back surface of the workpiece. . The subsequent layer may have a single layer configuration or a multilayer structure.

Further, the back contact film of the present invention may have a laminated structure including the above-mentioned adhesive layer and a laser mark layer capable of imparting imprint information by a laser mark. In the case of such a laminated structure, laser marking is applied to the surface of the laser marking layer during the manufacturing process of the semiconductor device. Further, the back surface adhesion film having such a laminated structure may have a laminated structure in which the above-mentioned adhesive layer is thermally cured by heat treatment at 120 ° C for 2 hours, and the above-mentioned laser marking layer is not substantially thermally cured. Further, the layer which is not thermally cured by heat treatment at 120 ° C for 2 hours in the back surface adhesive film of the present invention includes a hardened thermosetting layer.

In the back contact film of the present invention, the adhesive layer and the laser marking layer are the semiconductor back surface adhesion layer. In the case where the back adhesion film of the present invention comprises a single layer of an adhesive layer, the adhesive layer is preferably a semiconductor back surface adhesion layer (A) containing a visible light absorbing dye. In the case where the back surface adhesion film of the present invention has the above laminated structure, the laser marking layer is preferably a semiconductor back surface adhesion layer containing a visible light absorbing dye, and the semiconductor back surface adhesion layer (A) may be contained in the above-mentioned adhesive layer and the above-mentioned ray. In any layer of the marking layer. In particular, when a semiconductor back surface adhesion layer (A) containing a visible light absorbing dye is used as the laser mark layer, the adhesive layer may be either the semiconductor back surface adhesion layer (A) or (B). On the other hand, in the case where the semiconductor back surface adhesion layer (B) is used as the laser mark layer, the adhesive layer contains the semiconductor back surface adhesion layer (A).

In the case where the above-mentioned adhesive layer contains the above-mentioned coloring agent, a high contrast is ensured between the marking portion on the laser marking layer side of the back adhesion film and the portion other than the marking portion on the laser marking layer side, and the marking information is realized. From the viewpoint of good visibility, the above coloring agent is preferably a black coloring agent. In addition, the content ratio of the coloring agent in the adhesive layer is preferably 0.5% by mass or more, and more preferably 1% by mass or more, from the viewpoint of achieving the above-mentioned good visibility by using the marking information of the laser mark. It is preferably 1.5% by mass or more. The content ratio is preferably 10% by mass or less, more preferably 8% by mass or less, still more preferably 5% by mass or less.

The thickness of the subsequent layer is, for example, 2 to 200 μm, preferably 4 to 160 μm, more preferably 6 to 100 μm, still more preferably 8 to 80 μm.

The above-mentioned laser marking layer is preferably a thermosetting layer (thermo-hardened layer) in which a thermosetting component is thermally hardened. The laser marking layer is formed by hardening a layer of the thermosetting resin composition formed of the resin composition forming the laser marking layer.

When the above-mentioned laser marking layer contains the above-mentioned coloring agent, it can exhibit excellent marking property and appearance, and can perform laser marking, and can provide various information such as character information or graphic information. Further, by appropriately selecting the color of the coloring agent, the information (character information, graphic information, and the like) given by the mark can be made excellent in visibility. Further, by selecting a coloring agent, it is possible to distinguish by color depending on the product. With respect to the content ratio of the coloring agent described above, for the viewpoint of achieving high visibility by the information of the laser mark imprinted to the laser mark layer, the total mass of the laser mark layer is, for example, 0.5% by mass. The above is preferably 1% by mass or more, and more preferably 1.5% by mass or more. The content ratio is, for example, 10% by mass or less, preferably 8% by mass or less, and more preferably 5% by mass or less.

In the case where the back contact film of the present invention has a multilayer structure of an adhesive layer and a laser mark layer, the thickness of the laser mark layer is preferably 1 or more, more preferably 1.5 or more, with respect to the thickness of the adhesive layer. More preferably, it is 2 or more. The above ratio is, for example, 8 or less.

The thickness of the laser marking layer in the case of having a laser marking layer is, for example, 2 to 180 μm, preferably 4 to 160 μm.

The thickness of the back surface adhesion film of the present invention is, for example, 2 to 200 μm, preferably 4 to 160 μm, more preferably 6 to 100 μm, still more preferably 10 to 80 μm. If the thickness is 2 μm or more, the back surface of the workpiece can be more firmly protected. When the thickness is 200 μm or less, the workpiece after the back surface is adhered can be made thinner.

The back surface adhesion film of the present invention preferably has an absorbance at 532 nm of 1.0 or more, more preferably 1.2 or more. If the back-contact film of the present invention has the above-mentioned absorbance at 532 nm, the visible light for performing the laser mark can be absorbed, and the mark information can be more clearly imparted by the laser mark.

The back surface adhesion film of the present invention preferably has a semiconductor back surface adhesion layer containing a visible light absorbing dye. That is, in the back surface adhesion film of the present invention, it is preferred that the semiconductor back surface adhesion layer (A) contains a visible light absorbing dye or a semiconductor back surface adhesion layer (B) containing a visible light absorbing dye. When the back surface adhesion film of the present invention has a semiconductor back surface adhesion layer containing a visible light absorbing dye, it is excellent in infrared absorbing property, and it is also possible to impart imprint information by a laser mark. Further, the semiconductor back surface adhesion layer (B) containing the visible light absorbing dye may be referred to as "semiconductor back surface adhesion layer (B1)". Further, the semiconductor back surface adhesion layer (A) may be a semiconductor back surface adhesion layer containing a visible light absorbing dye and may have a semiconductor back surface adhesion layer (B1).

The back surface adhesion film of the present invention preferably has a semiconductor back surface adhesion layer containing a filler and/or a pigment, and the filler and/or the pigment having an average particle diameter of 10 μm or less. That is, in the back contact film of the present invention, it is preferable that the semiconductor back surface adhesion layer (A) contains a filler and/or a pigment, and/or a semiconductor back surface adhesion layer (B) containing a filler and/or a pigment, and the above filler And/or the above pigment has an average particle diameter of 10 μm or less. When the back contact film of the present invention has such a configuration, the diffuse reflection of the light irradiated at the time of the laser mark is suppressed, the infrared shielding property is excellent, and the imprint information can be more clearly imparted by the laser mark. In addition, the semiconductor back surface adhesion layer (B) containing the filler and/or the pigment and having an average particle diameter of the filler and/or the pigment of 10 μm or less may be referred to as a "semiconductor back surface adhesion layer (B2)". In the back surface adhesion film of the present invention, the semiconductor back surface adhesion layer (A) may be a semiconductor back surface adhesion layer containing a filler and/or a pigment, and the filler and/or the pigment may have an average particle diameter of 10 μm or less, and have a semiconductor back surface adhesion. Layer (B2). In the present specification, the average particle diameter of the filler and the pigment can be determined, for example, by using a photometric type particle size distribution meter (trade name "LA-910", manufactured by Horiba, Ltd.). Further, one semiconductor back surface adhesion layer (B) may correspond to both the semiconductor back surface adhesion layer (B1) and the semiconductor back surface adhesion layer (B2). Examples of the pigment include the above-described coloring agent, infrared absorbing pigment, and the like.

The average transmittance of the back surface adhesion film of the present invention in the wavelength region of 1000 to 1800 nm is preferably 20% or less, more preferably 10% or less, still more preferably 5% or less. When the average transmittance is 20% or less, the infrared shielding property is high even when irradiated with infrared rays having a wavelength of 1000 to 1800 nm. The average transmittance in the above-mentioned wavelength region of 1000 to 1800 nm is the total light transmittance obtained by using the integrating sphere.

An embodiment in which the back surface adhesion film of the present invention has a laminated structure including an adhesive layer and a laser marking layer is shown in Fig. 1. As shown in FIG. 1, the back surface adhesion film 10 of this invention is arrange|positioned on the isolation film 30. The back contact film 10 of the present invention has a multilayer structure including the adhesive layer 11 and the laser mark layer 12, and the laser mark layer 12 is peelably adhered to the separator 30. Further, the adhesive layer 11 shown in FIG. 1 is a semiconductor back surface adhesion layer (A), and the laser mark layer 12 is a semiconductor back surface adhesion layer (B1). Furthermore, in FIG. 1, the adhesive layer 11 and the laser marking layer 12 may also have an opposite positional relationship (that is, the adhesive layer 11 is peelably adhered to the separator 30). When the adhesive layer 11 and the laser marking layer 12 have a positional relationship as shown in FIG. 1, the back surface adhesive film 10 of the present invention can be bonded to the back surface of the workpiece to be thermally cured. On the other hand, when the positional relationship between the adhesive layer 11 and the laser marking layer 12 is opposite to that shown in Fig. 1, it can be preferably used to produce the dicing tape-integrated back surface adhesive film described below.

[Cutting tape integrated semiconductor back contact film]
The back contact film of the present invention may be provided with a dicing tape having a laminated structure including a substrate and an adhesive layer, and a back adhesion film of the present invention which is detachably adhered to the adhesive layer of the dicing tape, that is, The dicing tape-integrated semiconductor back surface adhesion film (sometimes referred to as "cut tape integrated back surface adhesion film") is used. In addition, the dicing tape-integrated back surface adhesion film may be referred to as "the dicing tape-integrated back surface adhesion film of the present invention". When the back contact film of the present invention is used as the dicing tape-integrated back surface adhesion film, wrinkles can be made less likely to occur when attached to the substrate.

An embodiment of the dicing tape-integrated back surface adhesion film of the present invention will be described with reference to Fig. 2 . The dicing tape-integrated back surface adhesion film 1 shown in FIG. 2 is disposed on the separator 30. The dicing tape-integrated back-contact film 1 can be used in a process for obtaining a semiconductor wafer having a wafer-sized film for forming a back surface of a semiconductor wafer, and has a back-contact film 10 and a cut comprising the present invention. The laminated structure of the tape 20.

(substrate)
The base material in the dicing tape is an element that functions as a support in a dicing tape or a dicing tape-integrated back surface adhesive film. Examples of the substrate include a plastic substrate (especially a plastic film). The substrate may be a single layer or a laminate of the same or different substrates.

Examples of the resin constituting the plastic substrate include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, and block. Copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionic polymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid Polyester resin such as ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer; polyurethane; polyethylene terephthalate (PET), polynaphthalene Polyester such as ethylene formate or polybutylene terephthalate (PBT); polycarbonate; polyimine; polyetheretherketone; polyether quinone; aromatic polyamine, fully aromatic Polyamide such as polyamine; polyphenylene sulfide; fluororesin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; anthrone resin. In order to ensure good heat shrinkage in the substrate, it is easy to use the dicing tape or the local heat shrinkage of the substrate to maintain the wafer separation distance in the expansion step for expanding the separation distance between the diced semiconductor wafers. Preferably, the substrate contains ethylene-vinyl acetate copolymer or polyvinyl chloride as a main component. Further, the main component of the substrate is a component which accounts for the largest mass ratio among the constituent components. The above resins may be used alone or in combination of two or more. In the case where the adhesive layer is a radiation-curable adhesive layer as described below, the substrate preferably has radiation permeability.

In the case where the substrate is a plastic film, the plastic film may be unaligned or aligned in at least one direction (uniaxial direction, biaxial direction, etc.). When the film is aligned in at least one direction, the plastic film can be thermally contracted in at least one of the directions. In order to impart isotropic heat shrinkability to the substrate and the dicing tape, the substrate is preferably a biaxial alignment film. Furthermore, the plastic film that is aligned in at least one of the above directions can be obtained by extending the non-extended plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). Preferably, the substrate and the dicing tape have a heat shrinkage ratio of 1 to 30%, more preferably 2 to 25%, more preferably 2 to 25%, in a heat treatment test under the conditions of a heating temperature of 100 ° C and a heating time of 60 seconds. It is 3 to 20%, and particularly preferably 5 to 20%. The heat shrinkage rate is preferably a heat shrinkage ratio in at least one of the MD direction and the TD direction.

The surface of the adhesive layer side of the substrate is intended to improve adhesion to the adhesive layer, retention, and the like, and for example, corona discharge treatment, plasma treatment, sand extinction treatment, ozone exposure treatment, flame exposure treatment, Physical treatment such as high-voltage shock exposure treatment, ionizing radiation treatment, chemical treatment such as chromic acid treatment, and surface treatment such as easy treatment with a coating agent (primer). Further, in order to impart antistatic ability, a conductive vapor-deposited layer containing a metal, an alloy, or the like may be provided on the surface of the substrate. The surface treatment for improving the adhesion is preferably carried out integrally with the surface on the side of the adhesive layer in the substrate.

The thickness of the substrate is preferably 40 μm or more, and more preferably 50 μm or more from the viewpoint of the strength of the substrate serving as the support in the dicing tape and the dicing tape-integrated back surface adhesive film. Further, it is preferably 55 μm or more, and more preferably 60 μm or more. Further, from the viewpoint of achieving moderate flexibility in the dicing tape and the dicing tape-integrated back surface adhesion film, the thickness of the substrate is preferably 200 μm or less, more preferably 180 μm or less, and further preferably 150 μm. the following.

(adhesive layer)
The adhesive layer in the dicing tape can be an adhesive layer capable of deliberately reducing the adhesive force by external action during the use of the dicing tape integrated back contact film (adhesive strength reducing adhesive layer), or For the adhesive tape-integrated back-contact film, the adhesive layer is basically or completely not reduced by the external action (adhesive non-reducing adhesive layer), and the cutting tape can be used as the integrated back surface. The singulation method, conditions, and the like of the workpiece in which the adhesion film is diced is appropriately selected. The adhesive layer may have a single layer structure or a multilayer structure.

When the adhesive layer is adhesive to reduce the adhesive layer, the adhesive layer can exhibit a relatively high adhesion state and display during the manufacturing process or during use of the dicing tape integrated back surface adhesive film. The state of relatively low adhesion is used separately. For example, when the adhesive layer of the dicing tape is attached to the back surface adhesive film during the manufacturing process of the dicing tape-integrated back surface adhesive film, or when the dicing tape-integrated back surface adhesive film is used for the cutting step, the adhesive layer can be used to display the relative a higher adhesion state suppresses and prevents the back adhesion film from being embossed from the adhesive layer, and on the other hand, in the pickup step of picking up the semiconductor wafer from the dicing tape of the self-cut tape integrated back surface adhesion film, Picking is easy by reducing the adhesion of the adhesive layer.

Examples of the adhesive for forming such an adhesive-reducible adhesive layer include a radiation curable adhesive and a heat-foaming adhesive. As the adhesive for forming the adhesive-reducing adhesive layer, an adhesive may be used, or two or more adhesives may be used.

As the radiation curable adhesive, for example, an adhesive which is cured by irradiation with an electron beam, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used, and it is particularly preferable to use ultraviolet rays. Adhesive type (ultraviolet curable adhesive) is used for hardening.

Examples of the radiation-curable adhesive include a base polymer containing an acrylic polymer and a radiation polymerizable monomer component or an oligomer component having a functional group such as a carbon-carbon double bond having radiation polymerization property. Radiation-curable adhesive.

The acrylic polymer contains a polymer derived from a structural unit of an acrylic monomer (a monomer component having a (meth) acrylonitrile group in a molecule) as a structural unit of a polymer. The acrylic polymer is preferably a polymer containing a structural unit derived from a maximum of (meth) acrylate in a mass ratio. Further, the acrylic polymer may be used alone or in combination of two or more.

The (meth) acrylate may, for example, be a hydrocarbon group-containing (meth) acrylate which may have an alkoxy group. Examples of the hydrocarbon group-containing (meth) acrylate having an alkoxy group include a hydrocarbon group having an alkoxy group exemplified as a structural unit of an acrylic resin which may be contained in the semiconductor back surface adhesion layer. )Acrylate. The above-mentioned hydrocarbon group-containing (meth) acrylate having an alkoxy group may be used singly or in combination of two or more kinds. The (meth) acrylate having a hydrocarbyl group which may have an alkoxy group is preferably 2-ethylhexyl acrylate or lauryl acrylate. In order to appropriately exhibit the basic properties such as adhesion by the (meth) acrylate having alkoxy group-containing hydrocarbon group in the adhesive layer, the entire monomer component for forming the acrylic polymer may have The proportion of the hydrocarbon group-containing (meth) acrylate of the alkoxy group is preferably 40% by mass or more, and more preferably 60% by mass or more.

The acrylic polymer may contain a structural unit derived from another monomer component copolymerizable with the above-mentioned alkoxy group-containing (meth) acrylate, for the purpose of modifying the cohesive force and heat resistance. Examples of the other monomer component include other monomers exemplified as the structural unit of the acrylic resin which can be contained in the semiconductor back surface adhesion layer. The other monomer components may be used alone or in combination of two or more. In order to appropriately exhibit the basic properties such as adhesion by a hydrocarbon group-containing (meth) acrylate having an alkoxy group in the adhesive layer, the above-mentioned other among the entire monomer components of the acrylic polymer is formed. The total ratio of the monomer components is preferably 60% by mass or less, and more preferably 40% by mass or less.

The acrylic polymer may contain a structural unit derived from a polyfunctional monomer copolymerizable with a monomer component forming an acrylic polymer in order to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and new Pentandiol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate Ester, epoxy (meth) acrylate (for example, poly(meth) methacrylate), (meth) acrylate polyester, (meth) acrylate methacrylate equal to (Molecular) in the molecule A monomer of an acryloyl group and other reactive functional groups. The above polyfunctional monomer may be used alone or in combination of two or more. In order to properly exhibit the basic properties such as adhesion by a hydrocarbon group-containing (meth) acrylate having an alkoxy group in the adhesive layer, the above-mentioned plurality of all monomer components of the acrylic polymer are formed. The proportion of the functional monomer is preferably 40% by mass or less, and more preferably 30% by mass or less.

The acrylic polymer is obtained by polymerizing one or more monomer components containing an acrylic monomer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like.

The acrylic polymer can be obtained by polymerization using a raw material monomer forming the same. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. The mass average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000. When the mass average molecular weight is 100,000 or more, the amount of the low molecular weight substance in the adhesive layer tends to be small, and contamination against the back surface adhesion film or the semiconductor wafer or the like can be further suppressed.

The adhesive layer or the adhesive forming the adhesive layer may also contain a crosslinking agent. For example, in the case where an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked to further reduce the low molecular weight substance in the adhesive layer. Further, the mass average molecular weight of the acrylic polymer can be increased. Examples of the crosslinking agent include a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), an aziridine compound, and a melamine compound. In the case of using a crosslinking agent, the amount thereof is preferably about 5 parts by mass or less, more preferably from 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.

Examples of the radiation polymerizable monomer component include (meth)acrylic acid urethane, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol IV ( Methyl) acrylate, dipentaerythritol monohydroxypenta(meth) acrylate, dipentaerythritol hexa(meth) acrylate, 1,4-butanediol di(meth) acrylate, and the like. Examples of the radiation polymerizable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and a molecular weight is preferred. It is about 100 to 30000. The content of the radiation polymerizable monomer component and the oligomer component in the radiation curable adhesive which forms the pressure-sensitive adhesive layer is, for example, 5 to 500 parts by mass, preferably 40 to 100 parts by mass based on 100 parts by mass of the base polymer. About 150 parts by mass. Further, as the radiation-type adhesive which is added, for example, those disclosed in Japanese Laid-Open Patent Publication No. Sho 60-196956 can be used.

The radiation curable adhesive may be a base polymer containing a functional group such as a carbon-carbon double bond having a radiation polymerizable property in a polymer side chain or a polymer main chain at a polymer main chain terminal. Radiation-curable adhesive. When such an intrinsic type radiation curable adhesive is used, there is a tendency to suppress unintentional temporal change of the adhesive property due to the movement of the low molecular weight component in the formed adhesive layer.

The base polymer contained in the intrinsic radiation curable adhesive is preferably an acrylic polymer. The method of introducing a radiation-polymerizable carbon-carbon double bond to an acrylic polymer is, for example, a method of polymerizing (copolymerizing) a raw material monomer containing a monomer component having a first functional group to obtain an acrylic polymerization. After the reaction, a compound having a second functional group capable of reacting with the first functional group and a radiation-polymerizable carbon-carbon double bond is subjected to a condensation reaction with a radiation-polymerizable acrylic polymer having a carbon-carbon double bond. Or addition reaction.

Examples of the combination of the first functional group and the second functional group include a carboxyl group, an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridine group, an aziridine group and a carboxyl group, a hydroxyl group and an isocyanic acid. Base, isocyanate group and hydroxyl group. Among these, from the viewpoint of tracking the easiness of the reaction, a combination of a hydroxyl group and an isocyanate group, and a combination of an isocyanate group and a hydroxyl group are preferred. Among them, from the viewpoint of easiness of production of a polymer having a highly reactive isocyanate group, and on the other hand, from the viewpoint of easiness of production and acquisition of an acrylic polymer having a hydroxyl group, The first functional group is a hydroxyl group, and the second functional group is a combination of isocyanato groups. Examples of the isocyanate compound having an isocyanate group and a radioactive polymerizable carbon-carbon double bond, that is, an isocyanate compound containing a radiation polymerizable unsaturated functional group, for example, methacrylic acid isocyanate or isocyanic acid 2 - methacrylic acid methoxyethyl ester, iso-isopropenyl-α,α-dimethylbenzyl ester or the like. Further, examples of the acrylic polymer having a hydroxyl group include the above-mentioned monomer having a hydroxyl group or an ether derived from 2-hydroxyethyl vinyl ether, 4-hydroxybutyl ester vinyl ether or diethylene glycol monovinyl ether. The structural unit of a compound.

The radiation curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include an α-keto alcohol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonium chloride compound, a photoactive quinone compound, and Benzophenone compound, 9-oxopurine A compound, camphorquinone, a halogenated ketone, a mercaptophosphine oxide, a decylphosphonate or the like. Examples of the α-keto alcohol-based compound include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl) ketone and α-hydroxy-α,α'-dimethylbenzene. Ethyl ketone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, and the like. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2- Methyl-1-[4-(methylthio)-phenyl]-2-morpholinylpropan-1-one and the like. Examples of the benzoin ether-based compound include benzoin ethyl ether, benzoin isopropyl ether, and aniseed methoxylate. Examples of the ketal-based compound include benzoin dimethyl ketal and the like. Examples of the aromatic sulfonium chloride-based compound include 2-naphthalenesulfonium chloride and the like. Examples of the photoactive quinone compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)anthracene. Examples of the benzophenone-based compound include benzophenone, benzamidine benzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. As the above 9-oxopurine a compound, for example, 9-oxopurine 2-chloro 9-oxosulfuron 2-methyl 9-oxothione 2,4-Dimethyl 9-oxothione Isopropyl 9-oxopurine 2,4-Dichloro 9-oxosulfuron 2,4-Diethyl 9-oxothione 2,4-diisopropyl 9-oxothione Wait. The content of the photopolymerization initiator in the radiation-curable adhesive is, for example, 0.05 to 20 parts by mass based on 100 parts by mass of the base polymer.

The heat-expandable pressure-sensitive adhesive contains an adhesive (foaming agent, heat-expandable microsphere, etc.) which is foamed or expanded by heating. Examples of the foaming agent include various inorganic foaming agents or organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium sulfite, sodium borohydride, and azide. Examples of the organic foaming agent include chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodimethylamine, azodicarboxylate, and the like. Azo compound; p-toluenesulfonate, diphenylphosphonium-3,3'-disulfonium, 4,4'-oxybis(phenylsulfonate), allyl bis(sulfonate) Isocyanine compound; aminourea compound such as p-tolylsulfonium hemicarbazone, 4,4'-oxybis(phenylsulfonium hemicarbazide); 5-morpholinyl-1,2,3,4- Triazole compounds such as thiatriazole; N,N'-dinitrosopentamethylenetetramine, N,N'-dimethyl-N,N'-dinitroso-p-xylamine, etc. An N-nitroso compound or the like. As the heat-expandable microspheres, for example, a microsphere having a structure in which a substance which is easily vaporized and expanded by heating is sealed in a shell is exemplified. Examples of the substance which is easily vaporized and expanded by heating are, for example, isobutane, propane, pentane or the like. The heat-expandable microspheres can be produced by encapsulating a substance which is easily vaporized and expanded by heating into a shell-forming substance by a coacervation method, an interfacial polymerization method or the like. As the shell-forming material, a substance which exhibits hot meltability or a substance which can be broken by thermal expansion of the enclosed substance can be used. Examples of such a substance include a vinylidene chloride/acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polyfluorene, and the like. .

The pressure-sensitive adhesive layer is, for example, a pressure-sensitive adhesive layer. Further, the pressure-sensitive adhesive layer includes an adhesion-reducing adhesive layer, and although the adhesive layer formed of the above-mentioned radiation-curable adhesive is hardened by radiation irradiation in advance, it has a certain adhesive force. The adhesive layer of the form. As the adhesive for forming the adhesive non-reducing adhesive layer, an adhesive may be used, or two or more adhesives may be used. Further, the entire adhesive layer is an adhesive non-reducing adhesive layer, and a part of the adhesive non-reducing adhesive layer. For example, when the adhesive layer has a single layer structure, the entire adhesive layer is an adhesive non-reducing adhesive layer, or a specific portion of the adhesive layer (for example, a bonded object region of the cutting frame, and The region outside the central region is an adhesive non-reducing adhesive layer, and other portions (for example, a semiconductor wafer segment or a semiconductor wafer bonding target region, that is, a central region) are adhesively lowering adhesives. Floor. Further, when the adhesive layer has a laminated structure, all of the adhesive layer in the buildup structure is an adhesive non-reducing adhesive layer, and a part of the adhesive layer in the laminated structure may be an adhesive non-reducing adhesive. Floor.

The adhesive layer (radiation-cured radiation-curable adhesive layer) in a form in which the adhesive layer (radiation-free radiation-curable adhesive layer) formed by the radiation-curable adhesive is cured by radiation irradiation, Radiation irradiation reduces the adhesion, and also exhibits the adhesion from the polymer component contained, and can exert the minimum adhesive force required for the adhesive layer of the dicing tape in the cutting step or the like. In the case of using a radiation-curable adhesive layer irradiated with radiation, the entire adhesive layer may be irradiated with radiation to the radiation-curable adhesive layer or a part of the adhesive layer in the direction in which the surface of the adhesive layer is expanded. The radiation-curable adhesive layer that has been irradiated with radiation and the other portion is a radiation-curable adhesive layer that is not irradiated with radiation. In the present specification, the term "radiation-curing adhesive layer" means an adhesive layer formed of a radiation-curable adhesive, and includes a radiation-curable radiation-free radiation-curable adhesive layer and The adhesive layer is a radiation-hardened adhesive layer which is hardened by radiation irradiation and hardened.

As the adhesive for forming the pressure-sensitive adhesive layer, a known or conventional pressure-sensitive adhesive can be used, and an acrylic adhesive or a rubber-based adhesive using an acrylic polymer as a base polymer can be preferably used. In the case where the adhesive layer contains an acrylic polymer as a pressure sensitive adhesive, the acrylic polymer preferably contains a structural unit derived from (meth) acrylate as a polymerization unit having the largest mass ratio. Things. As the acrylic polymer, for example, an acrylic polymer described as an acrylic polymer which can be contained in the above-mentioned additive-type radiation curable adhesive can be used.

The adhesive layer or the adhesive forming the adhesive layer may be formulated with a known or conventional adhesive layer such as a crosslinking accelerator, an adhesion-imparting agent, an anti-aging agent, a coloring agent (pigment, dye, etc.) in addition to the above components. Additives used. As the coloring agent, for example, a compound colored by radiation irradiation can be mentioned. In the case of containing a compound colored by radiation irradiation, only a portion to which the radiation is irradiated may be colored. The compound colored by radiation irradiation is a colorless or light color before irradiation with radiation, but is a colored compound by radiation irradiation, and examples thereof include a leuco dye. The amount of the compound to be colored by radiation irradiation is not particularly limited, and can be appropriately selected.

The thickness of the adhesive layer is not particularly limited, and in the case where the adhesive layer is an adhesive layer formed of a radiation curable adhesive, the balance of the adhesion force to the back surface adhesive film before and after the radiation hardening of the adhesive layer is obtained. From the viewpoint of the above, it is preferably from about 1 to 50 μm, more preferably from 2 to 30 μm, still more preferably from 5 to 25 μm.

The back contact film of the present invention and the dicing tape-integrated back surface adhesion film of the present invention may have a separator on the surface of the back surface adhesion film. Specifically, each of the back contact film of the present invention or each of the dicing tape-integrated back contact film may have a sheet form having a separator, or the separator may be elongated and a plurality of backs may be disposed thereon. The adhesive film or a plurality of dicing tape-integrated back-contact films are wound, and the separator is wound into a roll form. The separator is an element for covering the back contact film of the present invention for protection, and is peeled off from the sheet when the back contact film of the present invention or the dicing tape-integrated back surface adhesion film of the present invention is used. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a fluorine-based release agent, or a long-chain alkyl acrylate release agent such as a release agent. Plastic film or paper.

The thickness of the separator is, for example, 10 to 200 μm, preferably 15 to 150 μm, more preferably 20 to 100 μm. When the thickness is 10 μm or more, it is less likely to be broken by the slit during the processing of the separator. When the thickness is 200 μm or less, it is easier to peel the dicing tape-integrated back surface adhesion film from the separator when bonding to the substrate and the frame.

[Method of Manufacturing Back Contact Film]
The back adhesion film 10 which is one embodiment of the back surface adhesion film of the present invention is produced, for example, in the following manner.

In the production of the back contact film 10 shown in Fig. 1, first, the adhesive layer 11 and the laser mark layer 12 are separately formed. The resin layer 11 can be formed by applying a resin composition (adhesive composition) for forming the adhesive layer 11 to a separator to form a resin composition layer, and then desolventizing or hardening by heating to make the resin composition. The layer is cured and produced. In the production of the adhesive layer 11, the heating temperature is, for example, 90 to 150 ° C, and the heating time is, for example, 1 to 2 minutes. Examples of the coating method of the resin composition include roll coating, screen coating, gravure coating, and the like. On the other hand, the laser marking layer 12 can be formed by applying a resin composition for forming a laser marking layer 12 to a separator to form a resin composition layer, and then desolvating or hardening by heating to form the resin composition. The layer is cured and produced. In the production of the laser marking layer 12, the heating temperature is, for example, 90 to 160 ° C, and the heating time is, for example, 2 to 4 minutes. In the above manner, the adhesive layer 11 and the laser marking layer 12 can be formed separately in the form of a separator. Then, the exposed surfaces of the adhesive layer 11 and the laser marking layer 12 are bonded to each other, and then die-cutting is performed so as to be a target planar projection shape and a planar projection area, thereby producing an adhesive layer 11 and a laser. The back surface of the marking layer 12 is laminated to the film 10.

[Method of manufacturing dicing tape integrated back contact film]
The dicing tape-integrated back surface adhesion film 1 which is one embodiment of the dicing tape-integrated back surface adhesion film of the present invention is produced, for example, in the following manner.

The dicing tape 20 of the dicing tape-integrated back surface adhesion film 1 shown in Fig. 2 can be produced by providing the adhesive layer 22 on the prepared substrate 21. For example, the substrate 21 made of resin can be formed into a film by a known or conventional film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like. . For the substrate 21, a surface treatment is performed as needed. In the formation of the adhesive layer 22, for example, after preparing an adhesive composition (adhesive) for forming an adhesive layer, first, the composition is applied onto a substrate 21 or a separator to form an adhesive composition. Floor. Examples of the coating method of the pressure-sensitive adhesive composition include roll coating, screen coating, gravure coating, and the like. Then, in the adhesive composition layer, desolvation is carried out as needed by heating, and a crosslinking reaction is generated as needed. The heating temperature is, for example, 80 to 150 ° C, and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 22 is formed on the separator, the adhesive layer 22 with the separator is attached to the substrate 21, and then becomes a target planar projection shape (for example, similar to the back adhesion film 10). The punching process is performed in such a manner as to shape the shape and the projected area of the plane, and then the separator is peeled off. Thereby, the dicing tape 20 which has the laminated structure of the base material 21 and the adhesive bond layer 22 is manufactured.

Then, the side of the adhesive layer 22 of the dicing tape 20 is attached to the side of the laser marking layer 12 of the back surface adhesive film 10 obtained as described above. The bonding temperature is, for example, 30 to 50 ° C, and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm. In the case where the adhesive layer 22 is the radiation curable adhesive layer, the adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or the adhesive layer may be applied from the side of the substrate 21 after the bonding. 22 irradiates radiation such as ultraviolet rays. Alternatively, in the manufacturing process of the dicing tape-integrated back surface adhesion film 1, the radiation irradiation may not be performed (in this case, the adhesive layer 22 may be radially hardened during use of the dicing tape-integrated back surface adhesion film 1). ). In the case where the adhesive layer 22 is an ultraviolet curing type, the ultraviolet irradiation amount for curing the adhesive layer 22 is, for example, 50 to 500 mJ/cm ² . In the dicing tape-integrated back surface adhesive film 1, the region (irradiation region R) to be irradiated as the adhesion reducing treatment of the adhesive layer 22 is attached, for example, as shown in FIG. 2, to the back adhesion film 19 in the adhesive layer 22. The area except the peripheral part of the area.

In the above manner, for example, the back adhesion film 10 of the present invention shown in Fig. 1 and the dicing tape-integrated back surface adhesion film 1 shown in Fig. 2 can be produced.

[Method of Manufacturing Semiconductor Device]
A semiconductor device can be manufactured using the dicing tape-integrated back surface adhesion film of the present invention. Specifically, the semiconductor device can be manufactured by the following manufacturing method, which comprises attaching the back surface of the workpiece to the back surface of the dicing tape-integrated back surface adhesive film of the present invention (particularly on the side of the adhesive layer). a step (attachment step); and a step of obtaining a singulated semiconductor wafer by cutting the object including at least the workpiece (cutting step). 3 to 6 show the steps in the method of manufacturing the semiconductor device using the dicing tape-integrated back surface adhesion film 1 shown in Fig. 2 .

(attachment step)
The workpiece attached to the back surface adhesive film side (particularly, the adhesive layer side) of the dicing tape-integrated back surface adhesive film of the present invention in the above-mentioned attaching step may be a semiconductor wafer or a resin. A sealing body formed by sealing the back surface and/or the side surface of each of the semiconductor wafers. Further, for example, as shown in FIG. 3(a), the semiconductor wafer 40 held by the wafer processing tape T1 is bonded to the dicing tape-integrated back surface adhesion film 1 of the back adhesion film 10 of the present invention (especially an adhesive) Layer 11). A bump (not shown) for flip chip mounting is provided on the surface of the semiconductor wafer 40. Thereafter, as shown in FIG. 3(b), the wafer processing tape T1 is peeled off from the semiconductor wafer 40.

(thermal hardening step)
In the case where the back surface adhesive film of the present invention has a thermosetting adhesive layer, it is preferred to have a step of thermally hardening the adhesive layer in the back surface adhesive film after the above-mentioned attaching step (thermosetting step). For example, in the above-described thermal hardening step, heat treatment for thermally hardening the adhesive layer 11 is performed. The heating temperature is preferably from 80 to 200 ° C, more preferably from 100 to 150 ° C. The heating time is preferably from 0.5 to 5 hours, more preferably from 1 to 3 hours. Specifically, the heat treatment is carried out, for example, at 120 ° C for 2 hours. In the thermal curing step, the adhesive strength of the adhesive layer 11 is improved by the adhesive layer 11, and the adhesion between the back adhesion film 10 of the present invention and the semiconductor wafer 40 of the dicing tape-integrated back surface adhesion film 1 is improved, thereby making the dicing tape integrated. The back surface adhesion film 1 and the back surface adhesion film 10 of the present invention have improved holding strength for the semiconductor wafer. Further, in the case where the back surface adhesive film of the present invention does not have a thermosetting adhesive layer, for example, the drying treatment can be carried out for several hours in the range of 50 to 100 ° C, whereby the wettability at the interface of the adhesive layer is improved. As for the semiconductor wafer, the holding force is improved.

(laser marking step)
In the case where the back contact film of the present invention has a laser marking layer, the method for fabricating the above semiconductor device preferably has the following steps (laser marking step): for the laser marking layer, the substrate side of the cutting tape is irradiated with a laser Shoot and perform laser marking. In the case of performing the above thermal hardening step, the laser marking step is preferably performed after the above thermal hardening step. Specifically, in the laser marking step, for example, for the laser marking layer 12, a laser is irradiated from the side of the substrate 21 of the dicing tape 20 to perform laser marking. By the laser marking step, various information such as character information or graphic information can be imprinted for each semiconductor wafer. In the laser marking step, in a laser marking process, laser marking can be performed efficiently for a plurality of semiconductor wafers at one time. As the laser used in the laser marking step, for example, a gas laser or a solid laser can be cited. Examples of the gas laser include carbon dioxide gas laser (CO ₂ laser) and excimer laser. As the solid laser, for example, a Nd:YAG laser can be cited.

(cutting step)
In the above-described cutting step, for example, as shown in FIG. 4, a frame (cutting frame) 51 for holding the fixing dicing tape is attached to the adhesive layer 22 in the dicing tape-integrated back surface adhesive film 1 to keep it. After being placed on the holder 52 of the cutting device, the cutting blade is provided by the cutting blade provided by the cutting device. In Fig. 4, the cutting portion is schematically indicated by a thick solid line. In the dicing step, the semiconductor wafer is singulated into the semiconductor wafer 41, and at the same time, the back adhesion film 10 of the present invention which diced the tape-integrated back surface adhesion film 1 is cut into a small film 10'. Thereby, the semiconductor wafer 41 with the film 10', that is, the semiconductor wafer 41 with the film 10' is obtained.

(radiation irradiation step)
The method of manufacturing the semiconductor device described above may have a step of irradiating radiation to the adhesive layer from the substrate side (radiation irradiation step). When the adhesive layer of the dicing tape is a layer formed by a radiation curable adhesive, after the dicing step, the adhesive layer may be irradiated with ultraviolet rays or the like instead of the dicing tape from the side of the substrate. The above-described radiation irradiation in the manufacturing process of the back contact film of the body type. The irradiation amount is, for example, 50 to 500 mJ/cm ² . In the dicing tape-integrated back surface adhesion film, the region (the irradiation region R shown in FIG. 2) for irradiating the adhesion reducing treatment of the adhesive layer is, for example, the bonding layer in the back surface adhesion film in the adhesive layer. The area except the peripheral part.

(pickup step)
Preferably, the method of fabricating the above semiconductor device has a step of picking up a semiconductor wafer with a film (pickup step). The pick-up step may be performed, for example, by a cleaning step of cleaning the side of the semiconductor wafer 41 in the dicing tape 20 with the semiconductor wafer 41 with the film 10' by using a cleaning solution such as water; or for expanding the film. The step of expanding the separation distance between the semiconductor wafers 41 of 10' is performed. For example, as shown in FIG. 5, the semiconductor wafer 41 with the film 10' is picked up from the dicing tape 20. For example, in a state where the dicing tape 20 with the dicing frame 51 is held on the holder 52 of the apparatus, the semiconductor wafer 41 of the attached film 10' of the pickup object is placed on the lower side of the dicing tape 20 to the top of the pickup mechanism. The pin member 53 is raised, and after being lifted up by the dicing tape 20, it is suction-held by the adsorption jig 54. In the picking up step, the jacking speed of the jack member 53 is, for example, 1 to 100 mm/sec, and the jacking amount of the jack member 53 is, for example, 50 to 3000 μm.

(Crystal mounting step)
Preferably, the method of manufacturing the semiconductor device has a step of performing a flip chip mounting of the semiconductor wafer 41 with a film after the pick-up step (a flip chip step). For example, as shown in FIG. 6, the semiconductor wafer 41 with the film 10' is flip-chip mounted on the mounting substrate 61. Examples of the mounting substrate 61 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. The semiconductor wafer 41 is electrically connected to the mounting substrate 61 via the bumps 62 by flip chip mounting. Specifically, the substrate (electrode pad) (not shown) provided on the circuit formation surface side of the semiconductor wafer 41 and the terminal portion (not shown) of the mounting substrate 61 are electrically connected via the bump 62. The bumps 62 are, for example, solder bumps. Further, a thermosetting underfill 63 is interposed between the wafer 41 and the mounting substrate 61.

In the above manner, the semiconductor device can be manufactured using the dicing tape-integrated back surface adhesion film of the present invention.
[Examples]

The invention is illustrated in more detail by the following examples, but the invention is not limited by the examples. In addition, the composition of each resin composition for forming the back surface adhesion film of each Example and a comparative example is shown in Table 1. In Table 1, the units representing the respective numerical values of the composition are the relative "parts by mass" within the composition.

Example 1
90 parts by mass of an acrylic resin (trade name "Teisanresin SG-P3", manufactured by Nagase Chemical Co., Ltd.), epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Tohto Kasei Co., Ltd.) 40 60 parts by mass of epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Corporation), and phenol resin (trade name "MEH7851-SS", manufactured by Mingwa Kasei Co., Ltd.) 100 parts by mass, two Cerium oxide filler F ₁ (trade name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatechs Co., Ltd.) 220 parts by mass, infrared absorbing pigment P ₁ (heavy metal oxide coloring agent, maximum absorption wavelength: 1600 nm , average particle diameter: 20 nm) 50 parts by mass, visible light absorbing black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) 5 parts by mass, and thermosetting catalyst (trade name "Curezol 2PHZ" 10 parts by mass of the methyl ethyl ketone added to the methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 36% by mass. Then, the resin composition was applied by using an applicator on the oxime release surface of the PET separator (thickness: 50 μm) having the surface of the ketone release treatment to form a resin composition layer. Then, the composition layer was heated at 130 ° C for 2 minutes to carry out solvent removal, and a semiconductor back surface adhesion layer (thermosetting semiconductor back surface adhesion layer) having a thickness of 17 μm was formed on the PET separator to obtain a back surface adhesion film.

Example 2
A back surface adhesion film of Example 2 was produced in the same manner as in Example 1 except that an infrared absorbing dye (phenylenediamine dye, maximum absorption wavelength: 940 nm) was used instead of the infrared absorbing pigment.

Example 3
The back surface adhesion film of Example 3 was produced in the same manner as in Example 2 except that the visible light absorbing black dye was not used.

Example 4
The back surface adhesion film of Example 4 was produced in the same manner as in Example 1 except that the visible light absorbing black dye was not used.

Example 5
100 parts by mass of the infrared absorbing pigment P ₂ (trade name "E-ITO", indium tin oxide, average particle diameter 30 nm, manufactured by Mitsubishi Materials Corporation) was used instead of the infrared absorbing pigment P ₁ 50 parts by mass. Otherwise, the back surface adhesion film of Example 5 was produced in the same manner as in Example 1.

Example 6
100 parts by mass of the infrared absorbing pigment P ₂ (trade name "E-ITO", indium tin oxide, manufactured by Mitsubishi Materials Corporation) was used instead of the infrared absorbing pigment P ₁ 50 parts by mass, and no visible light absorbing dye was used. Otherwise, the back surface adhesion film of Example 6 was produced in the same manner as in Example 1.

Comparative example 1
A back surface adhesion film of Comparative Example 1 was produced in the same manner as in Example 1 except that the infrared absorbing pigment was not used.

Comparative example 2
The same procedure as in Comparative Example 1 was carried out except that the cerium oxide filler F ₂ (trade name "FB-105FD", average particle diameter: 11 μm, manufactured by Denka Co., Ltd.) was used instead of the cerium oxide filler F ₁ . The back contact film of Comparative Example 2.

<evaluation>
The back surface adhesion film obtained in the examples and the comparative examples was subjected to the following evaluation. The results are shown in Table 1.

(1) Absorption spectrum The back-contact film obtained in the examples and the comparative examples was measured at 300 to 1900 nm using an ultraviolet-visible near-infrared spectrophotometer (trade name "V-670", manufactured by JASCO Corporation). The absorption spectrum in the wavelength region. Then, the absorption spectrum of the obtained absorption spectrum is read from the maximum value, the minimum value, and the wavelengths of the absorbance in the wavelength region of 1000 to 1800 nm, and the absorbance at 532 nm. Further, the ratio of the minimum value to the maximum value of the absorbance [minimum value/maximum value] is calculated.

In each of the absorption spectra of the back surface adhesion films of Examples 1 to 4, a wavelength region having an absorbance of less than 1.0 was not present in the range of 1000 to 1800 nm. In each of the absorption spectra of the back surface adhesion films of Examples 5 and 6, the absorbance at a wavelength of 1300 nm was 1.0, and the wavelength region having an absorbance of less than 1.0 was absent in the range of 1300 to 1800 nm. In each of the absorption spectra of the back surface adhesion films of Examples 5 and 6, the absorbance was obtained at a wavelength of 1000 nm to obtain a minimum value, from a wavelength of 1000 nm to a wavelength of 1800 nm, and a maximum value at a wavelength of 1800 nm.

(2) Average Transmittance The back-contact adhesive film obtained in the examples and the comparative examples was measured at an interval of 1 nm using an ultraviolet-visible near-infrared spectrophotometer (trade name "V-670", manufactured by JASCO Corporation). Transmission spectrum in the wavelength range from 300 to 1900 nm. Then, the average transmittance of the obtained transmittance in the wavelength region of 1000 to 1800 nm was calculated.

(3) Laser Markability For the back contact film obtained in the examples and the comparative examples, the case where the following two criteria were satisfied was evaluated as ○, and the case where at least one criterion was not satisfied was evaluated as ×, and the two standards were : It can be easily visualized (clear contrast) in bright field observation using a microscope; and the maximum depth of characters printed is 1 μm or more.

◎[Table 1]

1‧‧‧Cutting tape integrated backing film

10‧‧‧The back contact film of the present invention (semiconductor back contact film)

10'‧‧‧Small film

11‧‧‧ adhesive layer

12‧‧‧Laser Marking Layer

20‧‧‧Cut Tape

21‧‧‧Substrate

22‧‧‧Adhesive layer

30‧‧‧Separator

40‧‧‧Semiconductor wafer

41‧‧‧Semiconductor wafer

51‧‧‧cut box

52‧‧‧Holding

53‧‧‧Spinning members

54‧‧‧Adsorption fixture

61‧‧‧Installation substrate

62‧‧‧Bumps

63‧‧‧Bottom filler

R‧‧‧illuminated area

T1‧‧‧ Wafer processing tape

Fig. 1 is a schematic view (front cross-sectional view) showing an embodiment of a semiconductor back surface adhesion film of the present invention.

Fig. 2 is a schematic view (front cross-sectional view) showing an embodiment of a dicing tape-integrated semiconductor back surface adhesion film of the present invention.

3(a) and 3(b) are schematic diagrams (front cross-sectional views) showing an embodiment of the attaching step.

Fig. 4 is a schematic view (front cross-sectional view) showing an embodiment of a cutting step.

Fig. 5 is a schematic view (front cross-sectional view) showing an embodiment of a pickup step.

Fig. 6 is a schematic view (front cross-sectional view) showing an embodiment of a flip chip mounting step.

Claims (7)

A semiconductor back surface adhesion film having a semiconductor back surface adhesion layer (A) having an absorbance of 1.0 or more in a wavelength region of 1000 to 1800 nm under a thickness of 17 μm. A semiconductor back surface adhesion film having a semiconductor back surface adhesion layer (A) having an absorbance of 1.0 or more in a wavelength region of 1300 to 1800 nm under a thickness of 17 μm. The semiconductor back surface adhesion film of claim 1 or 2, wherein the semiconductor back surface adhesion layer (A) contains a dye having a maximum absorption wavelength at 850 nm or more in a wavelength region of 500 to 2000 nm. The semiconductor back surface adhesion film according to any one of claims 1 to 3, wherein the semiconductor back surface adhesion layer (A) contains a pigment having a maximum absorption wavelength at 850 nm or more in a wavelength region of 500 to 2000 nm. The semiconductor back surface adhesion film according to any one of claims 1 to 3, wherein the semiconductor back surface adhesion layer (A) contains a visible light absorbing dye; and/or has a semiconductor back surface adhesion layer (B1) containing a visible light absorbing dye. The semiconductor back surface adhesion film according to any one of claims 1 to 3, wherein the semiconductor back surface adhesion layer (A) has a minimum value and a maximum value of absorbance in a wavelength region of 1000 to 1800 nm under a thickness of 17 μm. The ratio [min/max] is 0.4 to 1.0. The semiconductor back surface adhesion film according to any one of claims 1 to 3, wherein the semiconductor back surface adhesion layer (A) contains a filler and/or a pigment; and/or has a semiconductor back surface adhesion layer (B2) containing a filler and/or a pigment. Further, the filler and/or the pigment have an average particle diameter of 10 μm or less.