TWI796391B - Dicing Tape Integrated Semiconductor Backside Adhesive Film - Google Patents

Abstract

The present invention provides a dicing tape-integrated semiconductor back adhesive film which can separate a semiconductor wafer into pieces without causing chipping of the semiconductor wafer or peeling off of the back adhesive film. The semiconductor backside adhesive film integrated with a crystal cutting tape according to the present invention includes: a crystal cutting tape having a laminated structure including a base material and an adhesive layer; Adhesive layer; and the in-line transmittance A of infrared rays with a wavelength of 1000 nm and the in-line transmittance B of infrared rays with a wavelength of 1342 nm of the above-mentioned adhesive film on the back of the semiconductor are both more than 20%, and the above-mentioned in-line transmittance A and the above-mentioned in-line transmittance B The ratio [in-line transmittance A (%)/in-line transmittance B (%)] is 0.3 to 1.0.

Description

Dicing Tape Integrated Semiconductor Backside Adhesive Film

The present invention relates to an adhesive film on the back of a semiconductor with integrated crystal cutting tape. More specifically, the present invention relates to a dicing tape-integrated adhesive film for back surface of semiconductor that can be used in the manufacturing process of semiconductor devices.

In the manufacture of a semiconductor device including a flip-chip mounted semiconductor wafer, a semiconductor backside adhesive film may be used as a film for forming a protective film on the so-called backside of the wafer. In addition, there are also cases where such an adhesive film on the back surface of a semiconductor is provided in a form integrated with a dicing tape (see Patent Documents 1 and 2).

Such a semiconductor back adhesive film integrated with a dicing tape (dicing tape integrated semiconductor back adhesive film) is used, for example, as follows. First, the semiconductor back adhesive film surface of the dicing tape-integrated semiconductor back adhesive film is attached to the semiconductor wafer as a workpiece, and the back adhesive film is heated by heating in order to increase the adhesive force of the back adhesive film to the wafer. After curing, blade dicing for singulating the wafer into wafers is performed with the wafer held on the dicing tape-integrated semiconductor back adhesive film. In the dicing step, the wafer is cut and singulated into wafers, and the back-adhesive film is cut into film pieces of the same size as the wafer.

The above-mentioned blade dicing is a method generally used for singulating semiconductor wafers, but cracks or chips (chips) may occur in semiconductor wafers obtained by blade dicing. If chips are generated by dicing, during the mounting step on the semiconductor device or heating in the reliability test, etc., cracks may expand to the circuit surface due to expansion and contraction of the wafer, resulting in an increase in the rate of defective products.

In recent years, there has been known a method of cutting the semiconductor back adhesive film by expanding the dicing tape in the dicing tape integrated semiconductor back adhesive film. In this method, for example, a surface protection film is attached to the surface of the semiconductor wafer (circuit formation surface) to protect the surface of the semiconductor wafer, and in this state, laser light is irradiated on the planned division line on the semiconductor wafer to form a modified circuit. In this way, the semiconductor wafer can be easily divided by using the planned division line, and then the semiconductor wafer is thinned by back bonding, or after the back bonding is carried out to thin the semiconductor wafer, the semiconductor wafer can be bonded in this state. Laser light is irradiated on the planned division line on the circle to form a modified area, and the back surface of the semiconductor wafer is attached to the semiconductor back adhesive film surface of the dicing tape integrated semiconductor back adhesive film, and the surface protection film is peeled off. After that, The dicing tape of the dicing tape-integrated semiconductor back adhesive film is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer by using an expanding device, thereby cutting both the semiconductor wafer and the semiconductor back adhesive film, and Each semiconductor wafer (semiconductor wafer with a semiconductor back adhesive film attached) was obtained. [Prior Art Literature] [Patent Document]

Patent Document 1: Japanese Patent Laid-Open No. 2011-151360 Patent Document 2: International Publication No. 2014/092200

[Problem to be solved by the invention]

However, in the method of cutting the semiconductor wafer by stretching after the film of the modified region is formed, when the semiconductor wafer formed with the film-attached surface protection film of the modified region is attached to the adhesive film on the back surface of the semiconductor, there is a problem. The pressure when attaching the semiconductor wafer is cut in the modified area, and the semiconductor wafer is submerged in the surface protection film. Therefore, the adhesion of the semiconductor wafer to the adhesive film on the back surface of the semiconductor becomes insufficient, or contact with an adjacent semiconductor wafer may cause chipping. In addition, when the surface protection film is peeled off after the semiconductor wafer with the surface protection film is adhered to the semiconductor back surface adhesive film, the semiconductor wafer whose peripheral portion is cut may be peeled off together with the surface protection film.

The present invention was made in view of the above problems, and an object of the present invention is to provide a dicing tape-integrated semiconductor back adhesive film capable of singulating semiconductor wafers without causing chipping of the semiconductor wafer and peeling off of the back adhesive film. [Technical means to solve the problem]

The inventors of the present invention have worked hard to achieve the above object, and as a result, they have found that if a crystal cutting tape is used, which has a laminated structure including a base material and an adhesive layer; The above-mentioned adhesive layer in the above-mentioned crystal dicing tape; and the linear transmittance A of infrared rays with a wavelength of 1000 nm and the linear transmittance B of infrared rays with a wavelength of 1342 nm of the above-mentioned semiconductor back adhesive film are both more than 20%, [linear transmittance A (%)/in-line transmittance B (%)] 0.3 ~ 1.0 dicing tape integrated semiconductor back adhesive film, the semiconductor wafer can be singulated without causing fragmentation of the semiconductor wafer and peeling from the back adhesive film . This invention was completed based on these knowledge.

That is, the present invention provides a semiconductor backside adhesive film integrated with a dicing tape, which includes: a dicing tape having a laminated structure including a base material and an adhesive layer; The above-mentioned adhesive layer in the crystal tape; and the linear transmittance A of infrared rays with a wavelength of 1000 nm and the linear transmittance B of infrared rays with a wavelength of 1342 nm of the above-mentioned semiconductor back adhesive film are both more than 20%, and the above-mentioned linear transmittance A and the above-mentioned The ratio of the in-line transmittance B [in-line transmittance A (%)/in-line transmittance B (%)] is 0.3 to 1.0. The dicing tape-integrated semiconductor back adhesive film with such a structure can be used in the manufacturing process of semiconductor devices.

As mentioned above, both the in-line transmittance A of infrared rays with a wavelength of 1000 nm and the in-line transmittance B of infrared rays with a wavelength of 1342 nm of the semiconductor back-adhesive film of the dicing tape integrated semiconductor back-adhesive film of the present invention are 20% or more. The semiconductor back-adhesive film in the dicing tape-integrated semiconductor back-adhesive film of the present invention having such a structure is sensitive to the laser light (especially laser light including infrared rays with wavelengths of 1000 nm and 1342 nm) used to form the modified region. The transmittance is high, so it is possible to form a modified region on the semiconductor wafer by laser light after the adhesive film is attached to the back of the semiconductor. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching the adhesive film to the back surface of the semiconductor, and the semiconductor wafer can be used without causing chipping of the semiconductor wafer during attachment or peeling of the adhesive film from the back surface when the surface protection tape is peeled off. Monolithic.

Regarding the adhesive film for the back surface of semiconductor with integrated dicing tape of the present invention, further, the ratio of the above-mentioned in-line transmittance A to the above-mentioned in-line transmittance B of the above-mentioned semiconductor back-adhesive film [in-line transmittance A (%)/in-line transmittance B (%) )] ranges from 0.3 to 1.0. Since the semiconductor back-adhesive film in the semiconductor back-adhesive film integrated with dicing tape of the present invention has such a structure, infrared rays of both wavelengths of 1000 nm and 1342 nm can be more evenly transmitted, so that two wavelengths of light can be used. Irradiating light on the semiconductor wafer forms the same modified area. Therefore, the types of laser light that can be used increase, and the versatility is excellent.

In the dicing tape-integrated semiconductor back adhesive film of the present invention, the ratio of the in-line transmittance A' of the infrared ray in the wavelength range of 1000 to 1342 nm of the semiconductor back-adhesive film to the above-mentioned in-line transmittance B [in-line transmittance A'(% )/linear transmittance B(%)] is preferably 0.3 to 1.0. If the semiconductor back-adhesive film in the semiconductor back-adhesive film integrated with dicing tape of the present invention has such a structure, infrared rays in the wavelength range of 1000 to 1342 nm can be transmitted to the same extent as infrared rays with a wavelength of 1342 nm, Therefore, the laser light in the above wavelength range can be used to form the same modified area on the semiconductor wafer. Therefore, the types of laser beams that can be used are increased, and the versatility is excellent.

The ratio of the total light transmittance C to the in-line transmittance D [total light transmittance C (%)/in-line transmittance D (%)] of the infrared ray with a wavelength of 1342 nm for the adhesive film on the back surface of semiconductor with integrated crystal cutting tape of the present invention Preferably it is 1.0-5.0. The dicing tape-integrated semiconductor back adhesive film of the present invention having such a structure tends to selectively transmit laser light easily, so it is easier to irradiate laser light from the dicing tape side after sticking to the semiconductor back adhesive film. And a modified region is formed on the semiconductor wafer. Therefore, there is no need to form a modified region on the semiconductor wafer before attaching to the semiconductor back adhesive film, and it is easier to separate the semiconductor wafer without causing chipping of the semiconductor wafer or peeling from the back adhesive film during attachment.

The haze value of the adhesive film on the back surface of semiconductor with integrated dicing tape of the present invention is preferably 80% or less. The dicing tape-integrated semiconductor back adhesive film of the present invention having such a structure is less likely to scatter laser light, so after attaching to the semiconductor back adhesive film, the laser light can be irradiated from the dicing tape side to effectively A modified region is formed on the semiconductor wafer. Therefore, there is no need to form a modified region on the semiconductor wafer before attaching to the semiconductor back adhesive film, and it is easier to separate the semiconductor wafer without causing chipping of the semiconductor wafer or peeling from the back adhesive film during attachment.

In the dicing tape-integrated semiconductor back-adhesive film of the present invention, it is preferable that the arithmetic average surface roughness of the back surface of the substrate and the front surface of the semiconductor back-adhesive film is 100 nm or less. The dicing tape-integrated semiconductor back adhesive film of the present invention having such a structure is less likely to scatter laser light, so after attaching to the semiconductor back adhesive film, the laser light can be irradiated from the dicing tape side to effectively A modified region is formed on the semiconductor wafer. Therefore, there is no need to form a modified region on the semiconductor wafer before attaching to the semiconductor back adhesive film, and it is easier to separate the semiconductor wafer without causing chipping of the semiconductor wafer or peeling from the back adhesive film during attachment. [Effect of Invention]

If the dicing tape-integrated semiconductor back adhesive film of the present invention is used, semiconductor wafers can be separated into pieces without causing chipping of the semiconductor wafer or peeling from the back adhesive film.

[Adhesive film for back surface of semiconductor with integrated dicing tape] The semiconductor back adhesive film integrated with dicing tape of the present invention (sometimes simply referred to as "the back adhesive film integrated with dicing tape") comprises: a dicing tape having a laminated structure including a base material and an adhesive layer; and a semiconductor back surface Adhesive film that is releasably adhered to the above-mentioned adhesive layer in the above-mentioned dicing tape (sometimes simply referred to as "back surface adhesive film"). Furthermore, in this specification, the so-called "front side" of a semiconductor (workpiece) refers to the surface of the workpiece on which bumps for flip-chip mounting are formed, and the so-called "back side" refers to the opposite side of the front side, that is, no bumps are formed. face. In addition, the "back adhesive film" refers to a film used in close contact with the back surface of a semiconductor, including a film for forming a protective film on the back surface (so-called back surface) of a semiconductor wafer (semiconductor back surface protective film).

The in-line transmittance ("in-line transmittance A") of infrared rays with a wavelength of 1000 nm of the back adhesive film is 20% or more, preferably 28% or more, more preferably 50% or more, and more preferably 60% or more. Since the above linear transmittance A is 20% or more, the transmittance of laser light with a wavelength near 1000 nm used to form the modified region of the back adhesive film is relatively high, so it can be used after attaching to the back adhesive film. A modified region is formed on a semiconductor wafer by laser light. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching to the back adhesive film, and the semiconductor wafer can be separated into pieces without causing fragmentation of the semiconductor wafer during attachment or peeling off from the back adhesive film. In addition, in this specification, the in-line transmittance of the back adhesive film and the dicing tape-integrated back adhesive film can be measured using a well-known spectrophotometer.

The in-line transmittance ("in-line transmittance B") of infrared rays with a wavelength of 1342 nm of the back adhesive film is 20% or more, preferably 40% or more, more preferably 50% or more, and more preferably 70% or more. Since the in-line transmittance B above is 20% or more, the transmittance of laser light including infrared rays with a wavelength of 1342 nm used to form the modified region of the back adhesive film is high, so it can be passed through after attaching to the back adhesive film. Laser light forms modified regions on semiconductor wafers. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching to the back adhesive film, and the semiconductor wafer can be separated into pieces without causing fragmentation of the semiconductor wafer during attachment or peeling off from the back adhesive film.

The ratio of the above-mentioned in-line transmittance A to the above-mentioned in-line transmittance B [in-line transmittance A (%)/in-line transmittance B (%)] of the back adhesive film is 0.3 to 1.0, preferably 0.5 to 1.0, more preferably 0.55 ~1.0, more preferably 0.75~1.0. If the above-mentioned ratio is within the above-mentioned range, the infrared rays of both wavelengths of 1000 nm and 1342 nm can be transmitted more equally, so the laser light of the two wavelengths can be used to form the same modified area on the semiconductor wafer. Therefore, the types of laser light that can be used increase, and the versatility is excellent.

The linear transmittance of infrared rays with a wavelength of 1064 nm (linear transmittance A ₁ ), the linear transmittance of infrared rays with a wavelength of 1080 nm (linear transmittance A _{2 ), and the linear transmittance of infrared rays with a wavelength of 1099 nm (linear transmittance A 2} ) of the back adhesive film The ratio of transmittance A ₃ ) to the above-mentioned linear transmittance B (that is, [linear transmittance A ₁ (%)/linear transmittance B (%)], [linear transmittance A ₂ (%)/linear transmittance B ( %)], and [all of linear transmittance A ₃ (%)/linear transmittance B (%)] are preferably from 0.3 to 1.0, more preferably from 0.5 to 1.0, and still more preferably from 0.7 to 1.0. In particular, the ratio of the in-line transmittance (in-line transmittance A') of infrared rays in the wavelength range of 1000 to 1342 nm to the above-mentioned in-line transmittance B [in-line transmittance A'(%)/in-line transmittance B(%)] is preferably within the above range. That is, the ratio of the total in-line transmittance A' of infrared rays in the wavelength region of 1000 to 1342 nm to the above-mentioned in-line transmittance B is preferably within the above-mentioned range. If the above-mentioned ratio is within the above-mentioned range, all of the wavelengths of 1064 nm, 1080 nm, 1099 nm, and 1342 nm (especially wavelengths 1000 to 1342 nm) of the plurality of laser lights that can form modified regions on the semiconductor wafer can be used. All infrared rays in the wavelength range of 1342 nm are transmitted to the same extent as infrared rays with a wavelength of 1342 nm, so it is possible to use laser light in the above-mentioned wavelength range to form an equivalent modified region on a semiconductor wafer. Therefore, the types of laser beams that can be used are increased, and the versatility is excellent.

One embodiment of the crystal cutting tape-integrated back adhesive film of the present invention will be described below. Fig. 1 is a schematic cross-sectional view showing one embodiment of a dicing tape-integrated back adhesive film. As shown in FIG. 1 , the dicing tape-integrated back adhesive film 1 includes a dicing tape 10 and a back adhesive film 20 laminated on the adhesive layer 12 in the dicing tape 10 . In the dicing tape-integrated back adhesive film 1 shown in FIG. 1 , the back adhesive film 20 is composed of a single layer of the adhesive layer 21 . The dicing tape-integrated back adhesive film 1 is used in the singulation step in the process of obtaining semiconductor wafers with a back adhesive film in the manufacture of semiconductor devices. The dicing tape 10 in the dicing tape-integrated back adhesive film 1 has a laminated structure including a base material 11 and an adhesive layer 12 . In addition, in order to correspond to the semiconductor wafer which is the workpiece|work to be bonded, the back surface adhesive film 20 is made into the dimension of the same level as a workpiece|work.

(adhesive layer) The back adhesive film includes at least an adhesive layer having a bonding surface (for example, 21a in FIG. 1 ) to the back of the workpiece. The adhesive layer may have thermosetting properties in order to protect the back surface of the workpiece by thermosetting after bonding to the back surface of the workpiece. Furthermore, when the adhesive layer is non-thermosetting and does not have thermosetting properties, the adhesive layer can be adhered to by adhesiveness (wettability) or chemical bonds at the interface caused by pressure sensitivity, etc. Protect the back of the workpiece. The adhesive layer may have a single-layer structure or a multi-layer structure.

It is preferable that the said adhesive layer and the adhesive composition (resin composition) which form an adhesive layer contain a thermoplastic resin. In the case where the above-mentioned adhesive layer is thermosetting, the above-mentioned adhesive layer and the adhesive composition forming the adhesive layer may contain a thermosetting resin and a thermoplastic resin, and may also contain a compound capable of reacting with a curing agent to form a bond. Thermosetting functional thermoplastic resin. In the case where the adhesive layer includes a thermoplastic resin having a thermosetting functional group, the adhesive composition does not need to include a thermosetting resin (epoxy resin, etc.).

The thermoplastic resin in the adhesive layer is, for example, responsible for the function of an adhesive. Examples of the thermoplastic resin include: acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid Ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, polyethylene terephthalate Saturated polyester resins such as polyethylene formate (PET) and polybutylene terephthalate (PBT), polyamideimide resins, fluororesins, etc. The above-mentioned thermoplastic resins may be used alone or in combination of two or more. As said thermoplastic resin, an acrylic resin is preferable from the viewpoint of having few ionic impurities and having high heat resistance.

The above-mentioned acrylic resin is a polymer comprising a structural unit derived from an acrylic monomer (a monomer component having a (meth)acryl group in a molecule) as a structural unit of the polymer. The above-mentioned acrylic resin is preferably a polymer containing the most structural units derived from (meth)acrylate in terms of mass ratio. In addition, acrylic resin may use only 1 type, and may use 2 or more types. Also, in this specification, "(meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid" (either or both of "acrylic acid" and "methacrylic acid"), and others same.

As said (meth)acrylate, the hydrocarbon group containing (meth)acrylate which may have an alkoxy group is mentioned, for example. Examples of the hydrocarbon group-containing (meth)acrylate include alkyl (meth)acrylate, cycloalkyl (meth)acrylate, aryl (meth)acrylate, and the like. Examples of the above-mentioned alkyl (meth)acrylates include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second-butyl, and third-butyl (meth)acrylates. , pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester ( lauryl ester), tridecyl ester, myristyl ester, hexadecyl ester, stearyl ester, eicosyl ester, etc. As said cycloalkyl (meth)acrylate, cyclopentyl (meth)acrylate, cyclohexyl, etc. are mentioned, for example. As said aryl (meth)acrylate, the phenyl ester and benzyl (meth)acrylic acid are mentioned, for example. Examples of the hydrocarbon group-containing (meth)acrylate having an alkoxy group include those in which at least one hydrogen atom in the hydrocarbon group in the above-mentioned hydrocarbon group-containing (meth)acrylate ester is replaced with an alkoxy group, for example, : 2-methoxymethyl, 2-methoxyethyl, 2-methoxybutyl (meth)acrylic acid, etc. The above-mentioned hydrocarbon group-containing (meth)acrylates which may have an alkoxy group may be used alone or in combination of two or more.

For the purpose of improving cohesion, heat resistance, etc., the acrylic resin may contain a structural unit derived from another monomer component copolymerizable with a hydrocarbon group-containing (meth)acrylate that may have an alkoxy group. Examples of the other monomer components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, Acrylamide, acrylonitrile and other functional group-containing monomers, etc. Examples of the carboxyl group-containing monomer include: acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid acid, crotonic acid, etc. As said acid anhydride monomer, maleic anhydride, itaconic anhydride, etc. are mentioned, for example. Examples of the hydroxyl group-containing monomer include: 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, (meth)acrylic acid 6-Hydroxyhexyl, 8-Hydroxyoctyl (meth)acrylate, 10-Hydroxydecyl (meth)acrylate, 12-Hydroxylauryl (meth)acrylate, (4-Hydroxymethyl)(meth)acrylate Cyclohexyl) methyl ester, etc. Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate, methylglycidyl (meth)acrylate, and the like. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide Propanesulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloxynaphthalenesulfonic acid, etc. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethyl acryloylphosphate and the like. The above-mentioned other monomer components may be used only by one type, or two or more types may be used.

The acrylic resin that can be included in the adhesive layer is preferably selected from butyl acrylate, ethyl acrylate and , acrylonitrile, and acrylic acid monomer copolymer.

When the adhesive layer contains a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, and polyurethanes. Resin, silicone resin, thermosetting polyimide resin, etc. The above-mentioned thermosetting resins may be used alone or in combination of two or more. Epoxy resin is preferable as the above-mentioned thermosetting resin because there is a tendency that the content of ionic impurities and the like which may cause corrosion of the semiconductor wafer is low. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.

Examples of the above-mentioned epoxy resins include bisphenol A epoxy resins, bisphenol F epoxy resins, bisphenol S epoxy resins, brominated bisphenol A epoxy resins, hydrogenated bisphenol A epoxy resins, and bisphenol A epoxy resins. Oxygen resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fennel type epoxy resin, phenolic novolak type epoxy resin, o-cresol novolak type epoxy resin, etc. Multifunctional epoxy resins such as phenol novolak type epoxy resin, trihydroxybenzenemethane type epoxy resin, and tetraphenol ethane type epoxy resin. The said epoxy resin may use only 1 type, and may use 2 or more types. Among these, phenolic novolak-type epoxy resins, o-cresol novolac-type epoxy resins, and biphenyl-type epoxy resins are preferable in terms of high reactivity with phenol resins as hardeners and excellent heat resistance. Resin, trihydroxybenzene methane type epoxy resin, tetraphenol ethane type epoxy resin.

Examples of phenolic resins that can function as hardeners for epoxy resins include phenolic novolac resins, phenol aralkyl resins, cresol novolac resins, tertiary butylphenol novolak resins, nonylphenol Novolak-type phenolic resins such as novolac resins. Moreover, as this phenol resin, polyoxystyrene (polyoxystyrene), such as a resol type phenol resin and polyparahydroxystyrene, is also mentioned. The above-mentioned phenol resins may be used alone or in combination of two or more.

In the adhesive layer, from the viewpoint of fully proceeding the hardening reaction between the epoxy resin and the phenol resin, the phenol resin is equal to the number of hydroxyl groups in the phenol resin per 1 equivalent of the epoxy group in the epoxy resin component. It is preferably included in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

When the adhesive layer contains a thermosetting resin, the content ratio of the thermosetting resin is preferably from 5 to 100% with respect to the total mass of the adhesive layer from the viewpoint of properly curing the adhesive layer. 60% by mass, more preferably 10 to 50% by mass.

When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin having a thermosetting functional group can be used. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth)acrylate as the largest structural unit in terms of mass ratio. As this hydrocarbon group-containing (meth)acrylate, what was illustrated as the hydrocarbon group-containing (meth)acrylate which forms the acrylic resin which is a thermoplastic resin which may be contained in the said adhesive agent layer is mentioned, for example. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among them, glycidyl group and carboxyl group are preferable. That is, a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin are particularly preferable as the thermosetting functional group-containing acrylic resin. Furthermore, it is preferable to include together a thermosetting functional group-containing acrylic resin and a curing agent. As the curing agent, for example, a crosslinking agent that can be included in a radiation-curable adhesive for forming an adhesive layer described below can be mentioned. Agents are exemplified. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, for example, the above-mentioned various phenol resins can be used.

The adhesive layer preferably contains a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is included, the curing reaction of the resin component can be sufficiently advanced or the curing reaction speed can be increased during the curing of the adhesive layer. As said thermosetting catalyst, an imidazole compound, a triphenylphosphine compound, an amine compound, a trihalogenoborane compound, etc. are mentioned, for example. Examples of imidazole compounds include: 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methyl imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2 '-Methylimidazolyl-(1')]-Ethyl-Second-Trisyl, 2,4-Diamino-6-[2'-Undecylimidazolyl-(1')]-Ethyl 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-second-trisyl, 2, 4-Diamino-6-[2'-methylimidazolyl-(1')]-ethyl-second-tri-isocyanuric acid adduct, 2-phenyl-4,5-di Hydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole and the like. Examples of triphenylphosphine compounds include: triphenylphosphine, tributylphosphine, tris(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, diphenyltolylphosphine, bromide Tetraphenylphosphonium, methyltriphenylphosphonium, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium, benzyltriphenylphosphonium chloride, and the like. Among the triphenylphosphine-based compounds, compounds having both a triphenylphosphine structure and a triphenylborane structure are also included. Examples of such compounds include: tetraphenylphosphonium tetraphenyl borate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenyl borate, triphenylphosphine triphenylborane wait. As an amine compound, monoethanolamine trifluoroborate, dicyandiamide, etc. are mentioned, for example. As a trihalogenoborane compound, trichloroborane etc. are mentioned, for example. The said thermosetting catalyst may contain only 1 type, and may contain 2 or more types.

The adhesive layer may contain a filler. By including the filler, it is easy to adjust the physical properties such as elastic modulus, yield point strength, and elongation at break of the adhesive layer. Examples of fillers include inorganic fillers and organic fillers. Examples of constituent materials of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whiskers , silicon nitride, boron nitride, crystalline silicon dioxide, amorphous silicon dioxide, etc. Moreover, as a constituent material of an inorganic filler, a single metal, such as aluminum, gold, silver, copper, nickel, or alloy, amorphous carbon, graphite, etc. are mentioned. Examples of constituent materials of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. The above-mentioned fillers may contain only one kind, or may contain two or more kinds.

The aforementioned fillers may have various shapes such as spherical shape, needle shape, and flake shape. The average particle diameter of the above-mentioned filler is preferably 10-1000 nm, more preferably 20-700 nm, more preferably 30-500 nm. That is, the adhesive layer preferably contains nanofillers. When a nanofiller having such a particle size is contained as a filler, the cut-off property of the back-adhesive film that has been reduced into small pieces is more excellent. Also, when the average particle size is small, the in-line transmittance of infrared rays in the wavelength range of 1000 to 1342 nm tends to increase, and the above-mentioned [in-line transmittance A'/in-line transmittance B] tends to increase. The average particle diameter of the filler can be determined using, for example, a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba Seisakusho Co., Ltd.). Moreover, when the adhesive layer contains a filler, the content ratio of the filler is preferably at least 10% by mass, more preferably at least 15% by mass, still more preferably at least 20% by mass. The above content ratio is preferably at most 60% by mass, more preferably at most 50% by mass, more preferably at most 45% by mass. Furthermore, when the said content ratio is small, there exists a tendency for an in-line transmittance to improve.

The adhesive layer may contain a coloring agent. Examples of the coloring agent in the adhesive layer include those exemplified as coloring agents that may be contained in the laser marking layer described below. From the viewpoint of ensuring a high contrast between the marking portion by laser marking on the side of the laser marking layer in the back adhesive film and other portions, and realizing good visibility of the marking information, the above-mentioned colorant Preferably it is a black coloring agent. The above-mentioned colorants may be used alone or in combination of two or more. In addition, from the viewpoint of realizing the above-mentioned good visibility of the marking information using the laser mark, the content ratio of the coloring agent in the adhesive layer is preferably 0.5% by mass or more, more preferably 1% by mass or more, and even more preferably Preferably, it is at least 2% by mass. The above content ratio is preferably at most 10% by mass, more preferably at most 8% by mass, further preferably at most 5% by mass.

The adhesive agent layer may contain other components as needed. As said other component, a flame retardant, a silane coupling agent, an ion scavenger, etc. are mentioned, for example. Examples of the flame retardant include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and composite metal hydroxides, phosphazene compounds, antimony trioxide, etc. , antimony pentoxide, brominated epoxy resin, etc. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyl Methyldiethoxysilane, etc. Examples of the above-mentioned ion-scavenger include: hydrotalcites, bismuth hydroxide, hydrous antimony oxide (such as "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate of a specific structure (such as Toagosei Co., Ltd. "IXE-100" from Kyowa Chemical Industry Co., Ltd.), magnesium silicate (such as "Kyoword 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (such as "Kyoword 700" manufactured by Kyowa Chemical Industry Co., Ltd.), etc. Compounds that can form complexes with metal ions can also be used as ion traps. As such a compound, a triazole type compound, a tetrazole type compound, and a bipyridine type compound are mentioned, for example. Among these, triazole-based compounds are preferred from the viewpoint of the stability of complexes formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzene Triazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole Azole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylbenzene Base) benzotriazole, 2-(2-hydroxy-5-tertoctylphenyl) benzotriazole, 6-(2-benzotriazolyl)-4-tertoctyl-6'- tertiary butyl-4'-methyl-2,2'-methylene bisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1-(1,2-dicarboxydi Ethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-tertiary pentyl-6-{(H-benzotriazole-1- base) methyl}phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, 3-(2H-benzotriazol-2-yl)-5-(1 ,1-Dimethylethyl)-4-hydroxyl, 3-[3-tert-butyl-4-hydroxyl-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propane Octyl 3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propanoic acid 2-ethylhexyl, 2-( 2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2-( 2H-benzotriazol-2-yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-tertiary Octylphenyl)-benzotriazole, 2-(3-tert-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3, 5-di-tert-pentylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chloro-benzotriazole, 2-[2 -Hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazole- 2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl ]-2H-benzotriazole, methyl 3-[3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propionate, etc. In addition, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds, and polyphenol compounds can also be used as ion traps. Specific examples of such hydroxyl-containing compounds include 1,2-benzenediol, alizarin, anthracene, tannin, gallic acid, methyl gallate, and pyrogallol. . The above-mentioned other components may be used alone or in combination of two or more.

The tensile storage modulus (before hardening) of the adhesive layer at 23° C. is not particularly limited, but is preferably at least 0.5 GPa, more preferably at least 0.75 GPa, and still more preferably at least 1 GPa. When the said tensile storage modulus is 0.5 GPa or more, adhesion to a conveyance carrier tape can be prevented. The upper limit of the tensile storage modulus at 23° C. is, for example, 50 GPa. The above-mentioned tensile storage modulus can be adjusted according to the type or content of the resin component, the type or content of the filler, and the like.

The thickness of the adhesive layer is, for example, 2-200 μm, preferably 4-160 μm, more preferably 6-100 μm, further preferably 8-80 μm.

The back adhesive film may have a single-layer structure including the above-mentioned adhesive layer, or may have a multi-layer structure. The back adhesive film having a multilayer structure has, for example, a laminated structure including the above-mentioned adhesive layer and a laser marking layer capable of imparting marking information by laser marking. The back adhesive film having such a multilayer structure can adopt a laminated structure in which the above-mentioned adhesive layer is thermally cured by heat treatment at 120° C. for 2 hours, while the above-mentioned laser marking layer is not substantially thermally hardened. or a non-thermally hardened laminated structure in which both the above-mentioned adhesive layer and the above-mentioned laser marking layer are substantially not thermally cured by heat treatment at 120°C for 2 hours; the adhesive layer is irradiated with radiation On the other hand, the above-mentioned laser marking layer has a laminated structure without heat hardening that is substantially not heat hardened. In addition, in the back adhesive film, the cured thermosetting type layer was contained in the layer which was substantially not thermally hardened by the heat treatment at 120 degreeC for 2 hours.

FIG. 2 shows one embodiment of the dicing tape-integrated back adhesive film of the present invention when the back adhesive film has a multilayer structure including an adhesive layer and a laser marking layer. In the dicing tape integrated back adhesive film 1 shown in FIG. 2 , the back adhesive film 20 has a multilayer structure including an adhesive layer 21 and a laser marking layer 22, and the laser marking layer 22 is peelably attached to the dicing tape. The adhesive layer 12 in 10 is in close contact. When the adhesive layer 21 and the laser marking layer 22 are in the positional relationship shown in FIG. 2 , the back adhesive film 20 can be bonded to the back of the workpiece and thermally cured as needed before use.

(laser marking layer) When the back adhesive film has a multilayer structure of an adhesive layer and a laser marking layer, laser marking is performed on the surface of the laser marking layer during the manufacturing process of the semiconductor device. Furthermore, in the back adhesive film integrated with a dicing tape, the above-mentioned laser marking layer is preferably located on the dicing tape side in the back adhesive film, and is in close contact with the dicing tape and its adhesive layer. Also, the laser marking layer and/or the adhesive layer may be a thermosetting layer having thermosetting properties, or may be a non-thermosetting layer having no thermosetting properties. When the laser marking layer is not thermosetting, it may be a thermosetting type layer (thermosetting layer) obtained by thermosetting a thermosetting component. The laser marking layer is formed by curing the thermosetting resin composition layer formed from the resin composition forming the laser marking layer.

The laser marking layer and the resin composition forming the laser marking layer preferably contain a thermoplastic resin. When the above-mentioned laser marking layer is a thermosetting layer (ie, a thermosetting layer or a thermosetting layer), the above-mentioned laser marking layer or the resin composition forming the laser marking layer may contain a thermosetting resin and The thermoplastic resin may also contain a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to form a bond.

The above-mentioned thermoplastic resin functions as an adhesive in the laser marking layer, for example, and examples of the above-mentioned thermoplastic resin include those exemplified as thermoplastic resins that may be contained in the above-mentioned adhesive layer. The above-mentioned thermoplastic resins may be used alone or in combination of two or more. As said thermoplastic resin, an acrylic resin is preferable from the viewpoint of having few ionic impurities and having high heat resistance.

Regarding the acrylic resin that can be included in the laser marking layer and the resin composition forming the laser marking layer, from the viewpoint of simultaneously realizing the visibility of the imprinted information by the laser marking and good cutting performance when expanding, it is more preferable. Preferably, it is a copolymer of monomers suitably selected from butyl acrylate, ethyl acrylate, acrylonitrile, and acrylic acid.

When including thermosetting resins and thermoplastic resins, examples of the thermosetting resins include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, polyester resins, etc. Silicone resin, thermosetting polyimide resin, etc. The above-mentioned thermosetting resins may be used alone or in combination of two or more. Epoxy resin is preferable as the above-mentioned thermosetting resin because there is a tendency that the content of ionic impurities and the like which may cause corrosion of the semiconductor wafer is low. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.

As said epoxy resin, what was illustrated as the epoxy resin which may be contained in the said adhesive agent layer is mentioned. The said epoxy resin may use only 1 type, and may use 2 or more types.

As a phenol resin which can function as a hardening|curing agent of an epoxy resin, what was illustrated as the phenol resin which can be contained in the said adhesive agent layer is mentioned. The above-mentioned phenol resins may be used alone or in combination of two or more.

In the laser marking layer and the resin composition forming the laser marking layer, from the viewpoint of fully proceeding the hardening reaction between the epoxy resin and the phenolic resin, the phenolic resin is more effective than the epoxy group in the epoxy resin component. The hydroxyl group in the phenol resin is contained in an amount of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, per 1 equivalent.

When the laser marking layer and the resin composition forming the laser marking layer contain a thermosetting resin, the ratio of the content of the thermosetting resin relative to the laser marking layer or the resin composition forming the laser marking layer The total mass of the substance is preferably from 5 to 60% by mass, more preferably from 10 to 50% by mass.

When the laser marking layer and the resin composition forming the laser marking layer contain a thermoplastic resin having a thermosetting functional group, examples of the thermoplastic resin include thermosetting functional group-containing resins that may be included in the above-mentioned adhesive layer. An example of the acrylic resin. Furthermore, it is preferable to include a curing agent together with the thermosetting functional group-containing acrylic resin. Examples of the curing agent include crosslinking agents that may be included in the radiation-curable adhesive for forming the adhesive layer described below. instantiater. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, for example, the above-mentioned various phenol resins can be used.

The laser marking layer and the resin composition forming the laser marking layer preferably contain a thermosetting catalyst (thermosetting accelerator). When a thermosetting catalyst is included, when the above-mentioned resin composition is hardened, the hardening reaction of the resin component can be sufficiently advanced, or the speed of the hardening reaction can be increased. As said thermosetting catalyst, what was illustrated as the thermosetting catalyst which the said adhesive agent layer can contain is mentioned. The said thermosetting catalyst may contain only 1 type, and may contain 2 or more types.

The laser marking layer and the resin composition forming the laser marking layer may contain a filler. By including the filler, it is easy to adjust the physical properties such as elastic modulus, yield point strength, and elongation at break of the laser marking layer. As a filler, what was illustrated as the filler which can be contained in the said adhesive agent layer is mentioned. The above-mentioned fillers may contain only one kind, or may contain two or more kinds.

The aforementioned fillers may have various shapes such as spherical shape, needle shape, and flake shape. The average particle diameter of the above-mentioned filler is preferably 10-1000 nm, more preferably 20-700 nm, more preferably 30-500 nm. That is, the laser marking layer and the resin composition forming the laser marking layer preferably contain nano fillers. When a nanofiller having such a particle size is contained as a filler, the splittability and cutability of the small-piece back adhesive film are more excellent. Also, when the average particle size is small, the in-line transmittance of infrared rays in the wavelength range of 1000 to 1342 nm tends to increase, and the above-mentioned [in-line transmittance A'/in-line transmittance B] tends to increase. When the laser marking layer or the above resin composition contains a filler, the filler content is preferably at least 10% by mass, more preferably at least 15% by mass, and still more preferably at least 20% by mass. The above content ratio is preferably at most 60% by mass, more preferably at most 50% by mass, more preferably at most 45% by mass. Furthermore, when the said content ratio is small, there exists a tendency for an in-line transmittance to improve.

The laser marking layer and the resin composition for forming the laser marking layer may contain a colorant. In the case of containing a coloring agent, it can exhibit excellent marking properties and appearance, and can be laser marked to impart various information such as text information or graphic information. In addition, by appropriately selecting the color of the coloring agent, the information (character information, graphic information, etc.) provided by marking can be made excellent in visibility. Furthermore, by selecting the colorant, it is possible to differentiate the color of each product.

The above-mentioned colorant may be a pigment or a dye. As a coloring agent, a black coloring agent, a cyan coloring agent, a magenta coloring agent, a yellow coloring agent etc. are mentioned, for example. A black-based coloring agent is preferable from the viewpoint of engraving information on the laser marking layer by laser marking, and the visibility of the information is better. The said coloring agent may contain only 1 type, and may contain 2 or more types.

Examples of black-based colorants include azo-based pigments such as carbon black, graphite (black lead), copper oxide, manganese dioxide, and azomethine azo black, aniline black, perylene black, titanium black, and cyanine. Black, activated carbon, ferrite, magnetite, chromium oxide, iron oxide, molybdenum disulfide, composite oxide black pigment, anthraquinone organic black dye, azo organic black dye, etc. Examples of carbon black include furnace black, chimney black, acetylene black, thermal black, and lamp black. Solvent black 3, C.I. solvent black 7, C.I. solvent black 22, C.I. solvent black 27, C.I. solvent black 29, C.I. solvent black 34, C.I. solvent black 43, C.I. solvent black 70; C.I. Direct Black 17, C.I. Direct Black 19, C.I. Direct Black 22, C.I. Direct Black 32, C.I. Direct Black 38, C.I. Direct Black 51, C.I. Direct Black 71; C.I. Acid Black 1, C.I. Acid Black 2, C.I. Acid Black 24, C.I. Acid Black 26, C.I. Acid Black 31, C.I. Acid Black 48, C.I. Acid Black 52, C.I. Acid Black 107, C.I. Acid Black 109, C.I. Acid Black 110, C.I. Acid Black 119, C.I. Acid Black 154; C.I. Disperse Black 1, C.I. Disperse Black 3, C.I. Disperse Black 10, C.I. Disperse Black 24; C.I. Pigment Black 1, C.I. Pigment Black 7, etc. Further, black pigments such as metal oxides and metal nitrides containing metal elements such as Co, Cr, Cu, Mn, Ru, Fe, Ni, Sn, Ti, Ag, and Al, and the like are exemplified.

Examples of cyan-based colorants include: C.I. Solvent Blue 25, C.I. Solvent Blue 36, C.I. Solvent Blue 60, C.I. Solvent Blue 70, C.I. Solvent Blue 93, C.I. Solvent Blue 95; C.I. Acid Blue 6, C.I. Acid Blue 45; C.I. Pigment Blue 1, C.I. Pigment Blue 2, C.I. Pigment Blue 3, C.I. Pigment Blue 15, C.I. Pigment Blue 15:1, C.I. Pigment Blue 15:2, C.I. Pigment Blue 15:3, C.I. Pigment Blue 15:4, C.I. Pigment Blue 15:5, C.I. Pigment Blue 15:6, C.I. Pigment Blue 16, C.I. Pigment Blue 17, C.I. Pigment Blue 17:1, C.I. Pigment Blue 18, C.I. Pigment Blue 22, C.I. Pigment Blue 25, C.I. Pigment Blue 60, C.I. Pigment Blue 63, C.I. Pigment Blue 65, C.I. Pigment Blue 66; C.I. Vat Blue 4, C.I. Vat Blue 60; C.I. Pigment Green 7, etc.

Examples of magenta colorants include: C.I. Solvent Red 1, C.I. Solvent Red 3, C.I. Solvent Red 8, C.I. Solvent Red 23, C.I. Solvent Red 24, C.I. Solvent Red 25, C.I. C.I. Solvent Red 49, C.I. Solvent Red 52, C.I. Solvent Red 58, C.I. Solvent Red 63, C.I. Solvent Red 81, C.I. Solvent Red 82, C.I. Solvent Red 83, C.I. Solvent Red 84, C.I. C.I. solvent red 111, C.I. solvent red 121, C.I. solvent red 122; C.I. disperse red 9; C.I. solvent violet 8, C.I. solvent violet 13, C.I. solvent violet 14, C.I. solvent violet 21, C.I. solvent violet 27; C.I. disperse violet 1; C.I. Basic Red 1, C.I. Basic Red 2, C.I. Basic Red 9, C.I. Basic Red 12, C.I. Basic Red 13, C.I. Basic Red 14, C.I. Basic Red 15, C.I. Basic Red 17, C.I. Basic Basic Red 18, C.I. Basic Red 22, C.I. Basic Red 23, C.I. Basic Red 24, C.I. Basic Red 27, C.I. Basic Red 29, C.I. Basic Red 32, C.I. Basic Red 34, C.I. Basic Red 35. C.I. Basic Red 36, C.I. Basic Red 37, C.I. Basic Red 38, C.I. Basic Red 39, C.I. Basic Red 40; C.I. Basic Violet 1, C.I. Basic Violet 3, C.I. Basic Violet 7, C.I. Basic Violet 10, C.I. Basic Violet 14, C.I. Basic Violet 15, C.I. Basic Violet 21, C.I. Basic Violet 25, C.I. Basic Violet 26, C.I. Basic Violet 27, 28, etc. Further, examples of magenta-based colorants include: C.I. Pigment Red 1, C.I. Pigment Red 2, C.I. Pigment Red 3, C.I. Pigment Red 4, C.I. Pigment Red 5, C.I. Pigment Red 6, C.I. Pigment Red 7, C.I. Pigment Red 8. C.I. Pigment Red 9, C.I. Pigment Red 10, C.I. Pigment Red 11, C.I. Pigment Red 12, C.I. Pigment Red 13, C.I. Pigment Red 14, C.I. Pigment Red 15, C.I. Pigment Red 16, C.I. Pigment Red 17, C.I. Pigment Red 18. C.I. Pigment Red 19, C.I. Pigment Red 21, C.I. Pigment Red 22, C.I. Pigment Red 23, C.I. Pigment Red 30, C.I. Pigment Red 31, C.I. Pigment Red 32, C.I. Pigment Red 37, C.I. Pigment Red 38, C.I. Pigment Red 39. C.I. Pigment Red 40, C.I. Pigment Red 41, C.I. Pigment Red 42, C.I. Pigment Red 48:1, C.I. Pigment Red 48:2, C.I. Pigment Red 48:3, C.I. Pigment Red 48:4, C.I. Pigment Red 49, C.I. Pigment Red 49:1, C.I. Pigment Red 50, C.I. Pigment Red 51, C.I. Pigment Red 52, C.I. Pigment Red 52:2, C.I. Pigment Red 53:1, C.I. Pigment Red 54, C.I. Pigment Red 55, C.I. Pigment Red 56 , C.I. Pigment Red 57:1, C.I. Pigment Red 58, C.I. Pigment Red 60, C.I. Pigment Red 60:1, C.I. Pigment Red 63, C.I. Pigment Red 63:1, C.I. Pigment Red 63:2, C.I. Pigment Red 64, C.I. Pigment Red 64: 1, C.I. Pigment Red 67, C.I. Pigment Red 68, C.I. Pigment Red 81, C.I. Pigment Red 83, C.I. Pigment Red 87, C.I. Pigment Red 88, C.I. Pigment Red 89, C.I. Pigment Red 90, C.I. Pigment Red 92 Pigment Red 101, C.I. Pigment Red 104, C.I. Pigment Red 105, C.I. Pigment Red 106, C.I. Pigment Red 108, C.I. Pigment Red 112, C.I. Pigment Red 114, C.I. Pigment Red 122, C.I. Pigment Red 123, C.I. Pigment Red 139 Pigment Red 144, C.I. Pigment Red 146, C.I. Pigment Red 147, C.I. Pigment Red 149, C.I. Pigment Red 150, C.I. Pigment Red 151, C.I. Pigment Red 163, C.I. Pigment Red 166, C.I. Pigment Red 168, C.I. Pigment Red 170 Pigment Red 171, C.I. Pigment Red 172, C.I. Pigment Red 175, C.I. Pigment Red 176, C.I. Pigment Red 177, C.I. Pigment Red 178, C.I. Pigment Red 179, C.I. Pigment Red 184, C.I. Pigment Red 185, C.I. Pigment Red 187 , C.I. Pigment Red 190, C.I. Pigment Red 193, C.I. Pigment Red 202, C.I. Pigment Red 206, C.I. Pigment Red 207, C.I. Pigment Red 209, C.I. Pigment Red 219, C.I. Pigment Red 222, C.I. , C.I. Pigment Red 245; C.I. Pigment Violet 3, C.I. Pigment Violet 9, C.I. Pigment Violet 19, C.I. Pigment Violet 23, C.I. Pigment Violet 31, C.I. Pigment Violet 32, C.I. , C.I. Pigment Violet 43, C.I. Pigment Violet 50; C.I. Vat Red 1, C.I. Vat Red 2, C.I. Vat Red 10, C.I. Vat Red 13, C.I. Vat Red 15, C.I. Vat Red 23, C.I. Vat Red 29, C.I. Vat Red 35 wait.

Solvent Yellow 19, C.I. Solvent Yellow 44, C.I. Solvent Yellow 77, C.I. Solvent Yellow 79, C.I. Solvent Yellow 81, C.I. Solvent Yellow 82, C.I. Solvent Yellow 93, C.I. Solvent Yellow 98, C.I. Solvent Yellow 103, C.I. Solvent Yellow 104, C.I. Solvent Yellow 112, C.I. Solvent Yellow 162; C.I. Pigment Orange 31, C.I. Pigment Orange 43; C.I. Pigment Yellow 1, C.I. Pigment Yellow 2, C.I. Pigment Yellow 3, C.I. Pigment Yellow 4, C.I. Pigment Yellow 5, C.I. Pigment Yellow 6, C.I. Pigment Yellow 7, C.I. Pigment Yellow 10, C.I. Pigment Yellow 11, C.I. Pigment Yellow 12, C.I. Pigment Yellow 13, C.I. Pigment Yellow 14, C.I. Pigment Yellow 15, C.I. C.I. Pigment Yellow 17, C.I. Pigment Yellow 23, C.I. Pigment Yellow 24, C.I. Pigment Yellow 34, C.I. Pigment Yellow 35, C.I. Pigment Yellow 37, C.I. Pigment Yellow 42, C.I. Pigment Yellow 53, C.I. Pigment Yellow 55, C.I. C.I. Pigment Yellow 73, C.I. Pigment Yellow 74, C.I. Pigment Yellow 75, C.I. Pigment Yellow 81, C.I. Pigment Yellow 83, C.I. Pigment Yellow 93, C.I. Pigment Yellow 94, C.I. Pigment Yellow 95, C.I. Pigment Yellow 97, C.I. C.I. Pigment Yellow 100, C.I. Pigment Yellow 101, C.I. Pigment Yellow 104, C.I. Pigment Yellow 108, C.I. Pigment Yellow 109, C.I. Pigment Yellow 110, C.I. Pigment Yellow 113, C.I. Pigment Yellow 114, C.I. C.I. Pigment Yellow 120, C.I. Pigment Yellow 128, C.I. Pigment Yellow 129, C.I. Pigment Yellow 133, C.I. Pigment Yellow 138, C.I. Pigment Yellow 139, C.I. Pigment Yellow 147, C.I. Pigment Yellow 150, C.I. C.I. Pigment Yellow 154, C.I. Pigment Yellow 155, C.I. Pigment Yellow 156, C.I. Pigment Yellow 167, C.I. Pigment Yellow 172, C.I. Pigment Yellow 173, C.I. Pigment Yellow 180, C.I. Pigment Yellow 185, C.I. C.I. Vat Yellow 3, C.I. Vat Yellow 20, etc.

In addition, examples of other pigments include indium tin oxide, antimony tin oxide, zinc oxide, white lead, lithopone, titanium oxide, chromium oxide, iron oxide, aluminum oxide, precipitated barium sulfate, barite powder, red lead , iron oxide red, chrome yellow, zinc yellow (potassium zinc chromate hydroxide, tetrabasic zinc chromate), ultramarine blue, Prussian blue (potassium ferrocyanide), zirconium gray, yellow chrome, titanium chrome Yellow, chrome green, peacock blue, Victoria green, iron blue, vanadium zirconium blue, chrome tin red, manganese red, salmon pink (Salmon pink), titanium black, tungsten compound, metal boride, etc.

Regarding the content ratio of the above-mentioned coloring agent, from the viewpoint of realizing higher visibility of the information imprinted on the laser marking layer by the laser marking, compared to the laser marking layer or the resin composition forming the laser marking layer The total mass is, for example, 0.5% by mass or more, preferably 1% by mass or more, more preferably 2% by mass or more. The above content ratio is, for example, 10% by mass or less, preferably 8% by mass or less, more preferably 5% by mass or less.

The laser marking layer and the resin composition forming the laser marking layer may contain other components as necessary. Examples of the other components include flame retardants, silane coupling agents, ion scavengers, and the like exemplified as other components that may be included in the adhesive layer. The above-mentioned other components may be used alone or in combination of two or more.

The tensile storage modulus (after curing) of the laser marking layer at 23° C. is not particularly limited, but is preferably at least 0.5 GPa, more preferably at least 0.75 GPa, and still more preferably at least 1 GPa. When the said tensile storage modulus is 0.5 GPa or more, adhesion to a conveyance carrier tape can be prevented. In addition, it can protect the back of the workpiece more firmly after thermal hardening. The upper limit of the tensile storage modulus at 23° C. is, for example, 20 GPa. The above-mentioned tensile storage modulus can be adjusted according to the type or content of the resin component, the type or content of the filler, and the like.

When the back adhesive film has a multilayer structure of an adhesive layer and a laser marking layer, the ratio of the thickness of the laser marking layer to the thickness of the adhesive layer is preferably 1 or more, more preferably 1.5 or more, and still more preferably 2 or more. The above ratio is, for example, 8 or less.

In the case of having a laser marking layer, the thickness of the laser marking layer is, for example, 2 to 180 μm, preferably 4 to 160 μm.

The thickness of the back adhesive film is, for example, 2 to 200 μm, preferably 5 to 50 μm, more preferably 7 to 45 μm, further preferably 10 to 40 μm. When the above-mentioned thickness is 2 μm or more, the back surface of the workpiece can be protected more firmly. If the above-mentioned thickness is 200 μm or less, the workpiece after back bonding can be made thinner.

The content rate of the coloring agent in the back adhesive film is not particularly limited, but is preferably at least 0.5% by mass, more preferably at least 1% by mass, further preferably at least 2% by mass. The above content ratio is preferably at most 10% by mass, more preferably at most 8% by mass, further preferably at most 5% by mass. If the said content rate is 10 mass % or less, the back adhesive film which has the in-line transmittance of the infrared rays of wavelength 1000 nm and 1342 nm of 20% or more can be manufactured easily.

The arithmetic mean surface roughness of the front side of the back adhesive film (the side opposite to the side in close contact with the dicing tape, that is, the surface to which the semiconductor wafer is bonded) is preferably less than 100 nm, more preferably less than 80 nm, and more preferably less than 80 nm. Below 60nm. If the arithmetic average surface roughness of the front surface of the back adhesive film is 100 nm or less, it is difficult to scatter the laser light irradiated to form the modified region, so after attaching the semiconductor wafer to the back adhesive film, it can be Laser light is irradiated on the side of the dicing tape to efficiently form a modified region on the semiconductor wafer. Therefore, there is no need to form a modified region on the semiconductor wafer before attaching to the back adhesive film, and it is easier to separate the semiconductor wafer without causing chipping of the semiconductor wafer or peeling from the back adhesive film during attachment.

The peeling force of the back adhesive film on the adhesive layer (peeling angle 180°, peeling speed 300 mm/min, after hardening) is not particularly limited, but is preferably 10 N/20 mm or less, more preferably 5 N/20 mm or less . When the said peeling force is 10 N/20 mm or less, a wafer can be picked up easily from a dicing tape at the time of pick-up. The aforementioned peel force is preferably at least 0.02 N/20 mm, more preferably at least 0.05 N/20 mm. When the above-mentioned peeling force is 0.02 N/20 mm or more, the hardened back adhesive film is less likely to be peeled off from the dicing tape at the time of singulation.

(Substrate) The substrate in the dicing tape is an element that functions as a support in the dicing tape or the dicing tape-integrated back adhesive film. As a base material, a plastic base material (especially a plastic film) is mentioned, for example. The above substrate can be a single layer, or a laminate of the same or different substrates.

Examples of the resin constituting the plastic substrate include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block Copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid Polyolefin resins such as ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer; polyurethane; polyethylene terephthalate (PET), polyethylene naphthalene Polyesters such as ethylene formate and polybutylene terephthalate (PBT); polycarbonate; polyimide; polyetheretherketone; polyetherimide; aromatic polyamide, wholly aromatic polyamide Polyamide such as amide; polyphenylene sulfide; fluorine resin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; silicone resin, etc. It is easy to maintain the distance between the wafers by using the local heat shrinkage of the dicing tape or the substrate in the expansion step for ensuring good heat shrinkability in the base material and widening the distance between the singulated semiconductor wafers From a standpoint, the substrate preferably contains ethylene-vinyl acetate copolymer or polyvinyl chloride as a main component. In addition, the main component of a base material is set as the component which accounts for the largest mass ratio among constituent components. The above-mentioned resins may be used alone or in combination of two or more. When the adhesive layer is a radiation-curable adhesive layer as described below, the base material preferably has radiation transparency.

When the base material is a plastic film, the above plastic film can be non-aligned, or aligned along at least one direction (uniaxial direction, biaxial direction, etc.). In the case of alignment along at least one direction, the plastic film can be thermally shrunk along the at least one direction. If it has heat shrinkability, the outer peripheral portion of the semiconductor wafer of the dicing tape can be heat-shrunk, thereby fixing the separated semiconductor wafers with back adhesive film attached to each other in a state where the space between them can be enlarged, so that it can be Picking up semiconductor wafers is easy. Since the substrate and the dicing tape have isotropic thermal shrinkage, the substrate is preferably a biaxially oriented film. Furthermore, the plastic film oriented in at least one direction can be obtained by stretching (uniaxial stretching, biaxial stretching, etc.) an unstretched plastic film along the at least one direction. Regarding the substrate and the dicing tape, the heat shrinkage rate in the heat treatment test conducted under the conditions of heating temperature 100°C and heating time 60 seconds is preferably at least 1%, more preferably at least 3%, and still more preferably at least 3%. More than 5%, preferably more than 7%. The above-mentioned heat shrinkage rate is preferably the heat shrinkage rate in at least one direction of the MD (Machine Direction, longitudinal) direction and the TD (Transverse Direction, transverse) direction.

In order to improve the adhesion and retention of the adhesive layer, the surface of the adhesive layer side of the substrate can be treated, for example, by corona discharge treatment, plasma treatment, sandblasting treatment, ozone exposure treatment, flame exposure treatment, and high voltage electric shock exposure treatment. Physical treatment such as ionizing radiation treatment; chemical treatment such as chromic acid treatment; surface treatment such as easy adhesion treatment using coating agent (primer). In addition, in order to impart antistatic performance, a conductive vapor-deposited layer including metals, alloys, and oxides thereof may be provided on the surface of the substrate. The surface treatment for improving the adhesion is preferably performed on the entire surface of the substrate on the side of the adhesive layer.

The thickness of the substrate is preferably at least 40 μm, more preferably 50 μm, from the viewpoint of ensuring the strength for the substrate to function as a support in the dicing tape and the dicing tape-integrated back adhesive film. μm or more, more preferably 55 μm or more, particularly preferably 60 μm or more. Also, from the viewpoint of realizing moderate flexibility in the dicing tape and the dicing tape-integrated back adhesive film, the thickness of the substrate is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 180 μm or less. Below 150 μm.

The arithmetic average surface roughness of the rear surface of the base material (the side opposite to the side on which the adhesive layer is formed) is preferably 100 nm or less, more preferably 90 nm or less, further preferably 80 nm or less. If the arithmetic mean surface roughness of the front surface of the adhesive film on the back of the semiconductor is 100 nm or less, it is difficult to scatter the laser light irradiated to form the modified region, so after the semiconductor wafer is attached to the adhesive film on the back, it can be Laser light is irradiated on the side of the dicing tape to efficiently form a modified region on the semiconductor wafer. Therefore, there is no need to form a modified region on the semiconductor wafer before attaching to the back adhesive film, and it is easier to separate the semiconductor wafer without causing chipping of the semiconductor wafer or peeling from the back adhesive film during attachment.

(adhesive layer) The adhesive layer in the dicing tape may be an adhesive layer that can intentionally reduce the adhesive force by external action during use of the dicing tape integrated back adhesive film (adhesive force-reduced adhesive layer) ), it can also be an adhesive layer (adhesive non-reduced type adhesive layer) whose adhesive force is almost or not reduced by the action from the outside during the use of the dicing tape integrated back adhesive film, according to The singulation method and conditions of the workpiece to be singulated using the dicing tape-integrated back adhesive film are appropriately selected. The adhesive layer may have a single-layer structure or a multi-layer structure.

In the case where the adhesive layer is an adhesive layer with reduced adhesive force, the state where the adhesive layer exhibits relatively high adhesive force can be used in the manufacturing process or in the process of using the die-cutting tape-integrated back adhesive film, respectively. and a state showing relatively low adhesion. For example, when bonding the back adhesive film to the adhesive layer of the dicing tape in the production process of the dicing tape-integrated back adhesive film, or when using the dicing tape-integrated back adhesive film in the singulation step , can be used to suppress and prevent the back adhesive film from rising from the adhesive layer by using the state of the adhesive layer showing a relatively high adhesive force. In the pick-up step of picking up the semiconductor wafer by the tape, the pick-up can be easily performed by reducing the adhesive force of the adhesive layer.

As an adhesive that forms such an adhesive force-reducing type adhesive layer, a radiation-curable adhesive, a heat-foaming type adhesive, etc. are mentioned, for example. As the adhesive for forming the adhesive layer with reduced adhesive force, one type of adhesive may be used, or two or more types of adhesive may be used.

As the aforementioned radiation-curable adhesive, for example, an adhesive of the type that is cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used. And the type of adhesive that is hardened (ultraviolet curable adhesive).

Examples of the aforementioned radiation-curable adhesive include the addition of a radiation-polymerizable monomer component or an oligomer component containing a base polymer such as an acrylic polymer and a functional group such as a radiation-polymerizable carbon-carbon double bond. Type radiation hardening adhesive.

The above-mentioned acrylic polymer is a polymer comprising a structural unit derived from an acrylic monomer (a monomer component having a (meth)acryl group in a molecule) as a structural unit of the polymer. The above-mentioned acrylic polymer is preferably a polymer containing the most structural units derived from (meth)acrylate in terms of mass ratio. In addition, the acrylic polymer may use only 1 type, and may use 2 or more types.

As said (meth)acrylate, the hydrocarbon group containing (meth)acrylate which may have an alkoxy group is mentioned, for example. Examples of the hydrocarbon group-containing (meth)acrylate that may have an alkoxy group include those exemplified as the structural unit of the acrylic resin that may be contained in the above-mentioned adhesive agent layer. The above-mentioned hydrocarbon group-containing (meth)acrylates which may have an alkoxy group may be used alone or in combination of two or more. As the above-mentioned hydrocarbon group-containing (meth)acrylate which may have an alkoxy group, 2-ethylhexyl acrylate and lauryl acrylate are preferable. In order to appropriately exhibit the basic characteristics such as the adhesiveness of the hydrocarbon group-containing (meth)acrylate that may have an alkoxy group in the adhesive layer, all the monomer components used to form the acrylic polymer may have an alkoxy group. The ratio of the hydrocarbon group-containing (meth)acrylate of the group is preferably at least 40% by mass, more preferably at least 60% by mass.

The above-mentioned acrylic polymer may contain structural units derived from other monomer components copolymerizable with the above-mentioned hydrocarbon group-containing (meth)acrylate which may have an alkoxy group for the purpose of improving cohesion, heat resistance, and the like. As said other monomer component, the other monomer component illustrated as a structural unit of the acrylic resin which may be contained in the said adhesive agent layer is mentioned. The above-mentioned other monomer components may be used only by one type, or two or more types may be used. In order to appropriately express the basic characteristics such as the adhesiveness of the hydrocarbon group-containing (meth)acrylate that may have an alkoxy group in the adhesive layer, the above-mentioned other monomers in all monomer components used to form acrylic polymers The total ratio of the components is preferably at most 60% by mass, more preferably at most 40% by mass.

The above-mentioned acrylic polymer may contain a structural unit derived from a polyfunctional monomer copolymerizable with monomer components forming the acrylic polymer in order to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, Pentaerythritol Di(meth)acrylate, Pentaerythritol Di(meth)acrylate, Trimethylolpropane Tri(meth)acrylate, Pentaerythritol Tri(meth)acrylate, Dipentaerythritol Hexa(meth)acrylate Ester, epoxy (meth)acrylate (such as poly(meth)glycidyl acrylate), (meth)acrylate polyester, (meth)acrylate urethane, etc. have (meth)acrylic acid in the molecule Monomers of acyl groups and other reactive functional groups, etc. The said polyfunctional monomer may use only 1 type, and may use 2 or more types. In order to appropriately express the basic characteristics such as the adhesiveness of the hydrocarbon group-containing (meth)acrylate that may have an alkoxy group in the adhesive layer, the above-mentioned multifunctionality in all the monomer components used to form the acrylic polymer The ratio of the monomer is preferably at most 40% by mass, more preferably at most 30% by mass.

The acrylic polymer can be obtained by polymerizing the raw material monomers used to form it. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, suspension polymerization etc. are mentioned, for example. The mass average molecular weight of the acrylic polymer is preferably at least 100,000, more preferably 200,000 to 3 million. When the mass average molecular weight is 100,000 or more, there is a tendency for the low molecular weight substances in the adhesive layer to be less, and contamination to the back adhesive film, semiconductor wafer, etc. can be further suppressed.

The adhesive layer or the adhesive forming the adhesive layer may contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked to further reduce low molecular weight substances in the adhesive layer. In addition, the mass average molecular weight of the acrylic polymer can be increased. As said crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. When using a crosslinking agent, its usage-amount is preferably about 5 mass parts or less with respect to 100 mass parts of base polymers, More preferably, it is 0.1-5 mass parts.

Examples of the aforementioned radiation-polymerizable monomer components include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra( Meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and the like. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and the molecular weight is preferably It is about 100 to 30,000. The content of the radiation-polymerizable monomer component and oligomer component in the radiation-curable adhesive forming the adhesive layer is, for example, 5 to 500 parts by mass relative to 100 parts by mass of the base polymer, preferably 5 to 500 parts by mass. About 40 to 150 parts by mass. Also, as an additive type radiation-curable adhesive, for example, those disclosed in JP-A-60-196956 can be used.

Examples of the aforementioned radiation-curable adhesives include intrinsic radiation-curable adhesives that contain a radiation-polymerizable carbon-carbon doublet in the polymer side chain or in the polymer main chain, and at the end of the polymer main chain. The base polymer of functional groups such as bonds. Use of such an intrinsic radiation-curable adhesive tends to suppress undesired temporal changes in adhesive properties caused by migration of low-molecular-weight components in the formed adhesive layer.

Acrylic polymers are preferred as the base polymer contained in the above-mentioned intrinsic radiation-curable adhesive. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, the following method is mentioned: a method in which a raw material monomer including a monomer component having a first functional group is polymerized (copolymerized) to obtain After the acrylic polymer, in the state of maintaining the radiation polymerizability of the carbon-carbon double bond, the compound having the second functional group that can react with the first functional group and the radiation polymerizable carbon-carbon double bond reacts with acrylic acid Polymers undergo condensation or addition reactions.

Examples of combinations of the first functional group and the second functional group include carboxyl and epoxy, epoxy and carboxyl, carboxyl and aziridinyl, aziridinyl and carboxyl, hydroxyl and isocyanate, Isocyanate groups and hydroxyl groups, etc. Among them, a combination of a hydroxyl group and an isocyanate group, and a combination of an isocyanate group and a hydroxyl group are preferable from the viewpoint of easiness of reaction tracing. Among them, the technical difficulty of producing a polymer having a highly reactive isocyanate group is relatively high, and on the other hand, from the viewpoint of the ease of production and acquisition of an acrylic polymer having a hydroxyl group, the above-mentioned ones are preferred. A combination in which the first functional group is a hydroxyl group and the second functional group is an isocyanate group. As a compound having an isocyanate group and a radiation-polymerizable carbon-carbon double bond, that is, an isocyanate compound containing a radiation-polymerizable unsaturated functional group, for example, methacryl isocyanate, 2-methacryloxy Ethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, etc. In addition, examples of acrylic polymers having hydroxyl groups include monomers derived from the above-mentioned hydroxyl groups, or ether-based polymers such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether. A structural unit of a compound.

系化合物、樟腦醌、鹵化酮、醯基氧化膦、醯基磷酸酯等。作為上述α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等。作為上述苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙烷-1-酮等。作為上述安息香醚系化合物，例如可列舉：安息香乙醚、安息香異丙醚、茴香偶姻甲醚等。作為上述縮酮系化合物，例如可列舉苯偶醯二甲基縮酮等。作為上述芳香族磺醯氯系化合物，例如可列舉2-萘磺醯氯等。作為上述光活性肟系化合物，例如可列舉1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟等。作為上述二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等。作為上述9-氧硫𠮿

系化合物，例如可列舉：9-氧硫𠮿

、2-氯-9-氧硫𠮿

、2-甲基-9-氧硫𠮿

、2,4-二甲基-9-氧硫𠮿

、異丙基-9-氧硫𠮿

、2,4-二氯-9-氧硫𠮿

、2,4-二乙基-9-氧硫𠮿

、2,4-二異丙基-9-氧硫𠮿

等。放射線硬化性黏著劑中之光聚合起始劑之含量相對於基礎聚合物100質量份，例如為0.05～20質量份。The above radiation curable adhesive preferably contains a photopolymerization initiator. Examples of the above-mentioned photopolymerization initiators include α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, Benzophenone series compounds, 9-oxosulfur

series compounds, camphorquinones, halogenated ketones, acyl phosphine oxides, acyl phosphates, etc. Examples of the α-ketol-based compounds include: 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylbenzene Ethanone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenylketone, etc. Examples of the above-mentioned acetophenone-based compounds include: methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2- Methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropan-1-one, etc. Examples of the benzoin ether-based compound include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether, and the like. As said ketal compound, a benzoyl dimethyl ketal etc. are mentioned, for example. As said aromatic sulfonyl chloride type compound, 2-naphthalenesulfonyl chloride etc. are mentioned, for example. As said photoactive oxime compound, 1-phenyl-1, 2-propanedione-2-(O-ethoxycarbonyl) oxime etc. are mentioned, for example. As said benzophenone compound, a benzophenone, benzoylbenzoic acid, 3,3'- dimethyl- 4-methoxybenzophenone etc. are mentioned, for example. As the above-mentioned 9-oxosulfur

series compounds, such as: 9-oxosulfur

, 2-Chloro-9-oxosulfur

, 2-methyl-9-oxosulfur 𠮿

, 2,4-Dimethyl-9-oxosulfur 𠮿

, Isopropyl-9-oxosulfur

, 2,4-dichloro-9-oxosulfur

, 2,4-Diethyl-9-oxothio𠮿

, 2,4-Diisopropyl-9-oxosulfur

wait. Content of the photopolymerization initiator in a radiation-curable adhesive is 0.05-20 mass parts, for example with respect to 100 mass parts of base polymers.

The heat-expandable adhesive mentioned above is an adhesive containing components (foaming agent, heat-expandable microspheres, etc.) that foam or expand by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. As said inorganic foaming agent, ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, azides, etc. are mentioned, for example. Examples of the above-mentioned organic foaming agent include: trichloromonofluoromethane, dichloromonofluoromethane and other salt fluorinated alkanes; azobisisobutyronitrile, azodiformamide, barium azodicarboxylate, etc. Azo compounds; p-toluenesulfonylhydrazine, diphenylsulfone-3,3'-disulfonylhydrazine, 4,4'-oxybis(benzenesulfonylhydrazine), allylbis(sulfonylhydrazine hydrazide) and other hydrazine compounds; p-toluenesulfonamide semiurea, 4,4'-oxybis (benzenesulfonyl amidourea) and other semiurea compounds; 5-morpholino-1,2, Triazole compounds such as 3,4-thiatriazole; N-nitroso compounds such as formamide, etc. Examples of the heat-expandable microspheres include microspheres having a structure in which a substance that is easily vaporized and expanded by heating is enclosed in a shell. Examples of the substance that easily vaporizes and expands by heating include isobutane, propane, pentane, and the like. Heat-expandable microspheres can be produced by enclosing a substance that is easily vaporized and expanded by heating in a shell-forming substance by an aggregation method or an interfacial polymerization method. As the above-mentioned shell-forming substance, a substance exhibiting heat-meltability, or a substance that may be broken due to thermal expansion of the encapsulating substance can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymers, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyvinyl chloride.

As said adhesive force non-reducing type adhesive layer, a pressure sensitive type adhesive layer is mentioned, for example. Furthermore, in the pressure-sensitive adhesive layer, the adhesive layer formed of the radiation-curable adhesive described above regarding the adhesive force-reducible adhesive layer is hardened by radiation irradiation in advance, And it is an adhesive layer in the form of a certain adhesive force. As the adhesive for forming the non-adhesive force-reducing adhesive layer, one type of adhesive may be used, or two or more types of adhesive may be used. In addition, the entire adhesive layer may be a non-adhesive adhesive layer, or a part thereof may be a non-adhesive adhesive layer. For example, when the adhesive layer has a single-layer structure, the entire adhesive layer may be a non-reducing adhesive layer, or a specific part of the adhesive layer (for example, an object to be attached to a ring frame) area, and the area located outside the central area) is a non-adhesive adhesive layer, and other parts (such as the central area of the semiconductor wafer as the bonding object area) are adhesive reduced adhesive layers. Also, when the adhesive layer has a laminated structure, all the adhesive layers in the laminated structure may be non-adhesive adhesive layers, or a part of the adhesive layers in the laminated structure may be non-adhesive adhesive layers. layer.

Adhesive layer (radiation-irradiated radiation-curable adhesive layer) in a form in which an adhesive layer formed of a radiation-curable adhesive (radiation-unirradiated radiation-curable adhesive layer) is cured in advance by irradiation with radiation Even if the adhesive force is reduced by radiation irradiation, the adhesiveness caused by the contained polymer component can be exhibited, and the minimum required adhesive force of the adhesive layer of the dicing tape can be exhibited in the singulation process and the like. In the case of using a radiation-curable adhesive layer that has been irradiated with radiation, the entire adhesive layer may be a radiation-curable adhesive layer that has been irradiated in the direction of surface diffusion of the adhesive layer, or a part of the adhesive layer It is a radiation-curable adhesive layer that has been irradiated with radiation, and the other part is a radiation-hardenable adhesive layer that has not been irradiated with radiation. Furthermore, in this specification, the term "radiation-curable adhesive layer" refers to an adhesive layer formed of a radiation-curable adhesive, including radiation-curable adhesive layers that are not irradiated with radiation, and Both of radiation-hardened radiation-curable adhesive layers after the adhesive layer is cured by radiation irradiation.

As the adhesive for forming the above-mentioned pressure-sensitive adhesive layer, known or commonly used pressure-sensitive adhesives can be used, and acrylic adhesives or rubber-based adhesives using an acrylic polymer as the base polymer can be preferably used. . When the adhesive layer contains an acrylic polymer as the pressure-sensitive adhesive, the acrylic polymer preferably contains (meth)acrylate-derived structural units as the most structural units in terms of mass ratio. polymer. As the above-mentioned acrylic polymer, for example, the acrylic polymer described as the acrylic polymer that can be contained in the above-mentioned additive-type radiation-curable adhesive can be used.

In addition to the above-mentioned components, the adhesive layer or the adhesive forming the adhesive layer can be formulated with known or commonly used adhesive agents such as crosslinking accelerators, adhesion imparting agents, anti-aging agents, colorants (pigments, dyes, etc.) Additives used. As said coloring agent, the compound colored by radiation irradiation is mentioned, for example. When a compound colored by radiation irradiation is contained, only the part irradiated with radiation can be colored. The above-mentioned compound colored by radiation irradiation is colorless or light-colored before radiation irradiation, but becomes a colored compound by radiation irradiation, for example, leuco dyes and the like are mentioned. The usage-amount of the said compound colored by radiation irradiation is not specifically limited, It can select suitably.

The thickness of the adhesive layer is not particularly limited. When the adhesive layer is an adhesive layer formed of a radiation-curable adhesive, the adhesive force of the adhesive layer to the back adhesive film before and after radiation curing is obtained. From the viewpoint of the balance, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm.

The in-line transmittance of the infrared ray with a wavelength of 1000 nm of the back adhesive film integrated with a crystal cutting tape of the present invention (in the case of having a spacer, the spacer is excluded) is preferably 20% or more, more preferably 35% or more, and furthermore Preferably more than 50%. If the above-mentioned in-line transmittance is 20% or more, the dicing tape integrated back adhesive film has a high transmittance of laser light with a wavelength around 1000 nm irradiated to form a modified region, so after sticking to the back adhesive film , the modified region can be formed on the semiconductor wafer by irradiating laser light from the dicing tape side. Therefore, there is no need to form a modified region on the semiconductor wafer before attaching to the back adhesive film, and it is easier to separate the semiconductor wafer without causing chipping of the semiconductor wafer or peeling from the back adhesive film during attachment.

The in-line transmittance (in-line transmittance D) of the infrared ray with a wavelength of 1342 nm of the back adhesive film integrated with a crystal cutting tape of the present invention (in the case of having a spacer, the spacer is excluded) is preferably 20% or more, more preferably 40% or more, and more preferably 50% or more. If the above linear transmittance D is 20% or more, the dicing tape-integrated back adhesive film has a high transmittance of laser light with a wavelength of 1342 nm irradiated to form a modified region, so after sticking to the back adhesive film , the modified region can be formed on the semiconductor wafer more efficiently by irradiating laser light from the side of the dicing tape. Therefore, there is no need to form a modified region on the semiconductor wafer before attaching to the back adhesive film, and it is easier to separate the semiconductor wafer without causing chipping of the semiconductor wafer or peeling from the back adhesive film during attachment.

The total light transmittance (total light transmittance C) of the infrared ray with a wavelength of 1342 nm of the crystal-cutting tape-integrated back adhesive film of the present invention (in the case of having a spacer, the spacer is excluded) is preferably 60% or more, more preferably Preferably it is 70% or more, More preferably, it is 80% or more. In addition, the said total light transmittance C can be measured using a well-known spectrophotometer.

Ratio of the above-mentioned total light transmittance C to the above-mentioned linear transmittance D [total light transmittance] of the infrared ray with a wavelength of 1342 nm of the crystal-cutting tape-integrated back adhesive film of the present invention (in the case of having a spacer, the spacer is excluded) C(%)/linear transmittance D(%)] is preferably from 1.0 to 5.0, more preferably from 1.0 to 3.5, still more preferably from 1.0 to 2.0. If the above-mentioned ratio is within the above-mentioned range, the dicing tape-integrated back adhesive film tends to selectively transmit the laser light irradiated to form the modified region, so that it is easier to self- Laser light is irradiated on the side of the dicing tape to form a modified region on the semiconductor wafer. Therefore, there is no need to form a modified region on the semiconductor wafer before attaching to the back adhesive film, and it is easier to separate the semiconductor wafer without causing chipping of the semiconductor wafer or peeling from the back adhesive film during attachment. In addition, the said total light transmittance C can be measured using a well-known spectrophotometer.

The haze value of the dicing tape-integrated back-adhesive film of the present invention (except for the spacer when it has a spacer) is preferably 80% or less, more preferably 73% or less, and still more preferably 50% or less. If the above-mentioned haze value is 80% or less, the dicing tape-integrated back adhesive film is less likely to scatter the laser light irradiated to form the modified region, so after sticking to the back adhesive film, it can be cut by self-cutting. The strip side is irradiated with laser light to efficiently form a modified region on the semiconductor wafer. Therefore, there is no need to form a modified region on the semiconductor wafer before attaching to the back adhesive film, and it is easier to separate the semiconductor wafer without causing chipping of the semiconductor wafer or peeling from the back adhesive film during attachment. The said haze value can be measured based on JISK7361-1 (1997).

In the crystal-cutting tape-integrated back adhesive film of the present invention, the arithmetic average surface roughness of the back of the substrate and the front of the back adhesive film is preferably 100 nm or less, more preferably 80 nm or less, and more preferably 60 nm or less. below nm. If the above-mentioned arithmetic mean surface roughness is 100 nm or less, the dicing tape-integrated semiconductor back adhesive film is less likely to scatter the laser light irradiated to form the modified region, so after sticking to the back adhesive film, it can be Laser light is irradiated from the side of the dicing tape to efficiently form a modified region on the semiconductor wafer. Therefore, there is no need to form a modified region on the semiconductor wafer before attaching to the back adhesive film, and it is easier to separate the semiconductor wafer without causing chipping of the semiconductor wafer or peeling from the back adhesive film during attachment.

In the dicing tape-integrated back adhesive film of the present invention, the arithmetic mean surface roughness of the front surface of the substrate (in FIGS. 1 and 2, the side on which the adhesive layer is formed) is not particularly limited, and may be, for example, 100 above nm. In this case, it is preferable that the concave portion on the front surface of the substrate is filled with the adhesive layer. If the concave portion on the front surface of the substrate is filled with an adhesive layer, the diffuse reflection of the laser light caused by the concave portion can be suppressed, and the laser light can be irradiated from the side of the dicing tape to more efficiently bond the semiconductor crystal. The circles form modified regions. Examples of the surface having an arithmetic average surface roughness of 100 nm or more include an embossed surface and the like.

The thickness of the dicing tape-integrated back-adhesive film of the present invention (excluding the spacer when there is a spacer) is, for example, 70-200 μm, preferably 80-170 μm, more preferably 90-150 μm.

The dicing tape-integrated back adhesive film of the present invention may have a spacer on the front of the back adhesive film. Specifically, each dicing tape-integrated back adhesive film may be in the form of a sheet with a spacer, or the spacer may be in the form of a strip on which a plurality of dicing tape-integrated back adhesive films are arranged, and The spacer is wound into a roll form. The spacer is an element for covering and protecting the front surface of the back adhesive film, and is peeled from the sheet when the dicing tape-integrated back adhesive film of the present invention is used. Examples of separators include polyethylene terephthalate (PET) films, polyethylene films, polypropylene films, and surfaces coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. Cloth plastic film or paper etc.

The thickness of the separator is, for example, 10-200 μm, preferably 15-150 μm, more preferably 20-100 μm. If the above-mentioned thickness is 10 μm or more, it will be less likely to break due to incisions during processing of the separator. When the said thickness is 200 micrometers or less, when bonding to a board|substrate and a frame, it will become easier to peel off the dicing tape integrated back surface adhesive film from a spacer.

[Manufacturing method of dicing tape-integrated back-adhesive film] The crystal cutting tape-integrated back adhesive film 1 which is one embodiment of the die-cutting tape-integrated back adhesive film of the present invention is produced, for example, as follows.

The dicing tape 10 of the dicing tape-integrated back adhesive film 1 shown in FIGS. 1 and 2 can be produced by providing an adhesive layer 12 on a prepared substrate 11 . For example, the base material 11 made of resin can be obtained by film formation by a known or usual film formation method. Examples of the above-mentioned film-making methods include calendering, casting in an organic solvent, inflation extrusion in a closed system, T-die extrusion, co-extrusion, and dry lamination. law etc. Surface treatment is given to the base material 11 as needed. In forming the adhesive layer 12, for example, after preparing an adhesive composition (adhesive) for forming the adhesive layer, first, the composition is applied on the substrate 11 or the separator to form an adhesive composition. object layer. As a coating method of an adhesive composition, roll coating, screen coating, gravure coating etc. are mentioned, for example. Next, in this adhesive composition layer, desolventization is performed as needed by heating, and crosslinking reaction occurs as needed. The heating temperature is, for example, 80 to 150° C., and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 12 is formed on the separator, the adhesive layer 12 with the separator is attached to the base material 11 . Thereby, the crystal cutting tape 10 having the laminated structure of the base material 11 and the adhesive layer 12 is manufactured.

Regarding the adhesive layer 21 , first, a composition (adhesive composition) for forming the adhesive layer 21 containing a resin, a filler, a curing catalyst, a solvent, and the like is produced. Next, after applying the adhesive composition on the separator to form a coating film, the coating film is cured by desolventization or hardening as necessary to form the adhesive layer 21 . It does not specifically limit as a coating method, For example, well-known or usual coating methods, such as roll coating, screen coating, and gravure coating, are mentioned. Moreover, as desolvation conditions, it carries out in the range of temperature 70-160 degreeC, time 1-5 minutes, for example.

As shown in FIG. 2 , when the back adhesive film 20 has a laminated structure including the adhesive layer 21 and the laser marking layer 22 , the adhesive layer 21 and the laser marking layer 22 are produced separately. The adhesive layer 21 can be produced in the same manner as the above-mentioned method. On the other hand, the laser marking layer 22 can be produced by applying a resin composition for forming the laser marking layer 22 on the spacer to form a resin composition layer, and desolventizing by heating. or hardening to cure the resin composition layer. In the fabrication of the laser marking layer 22, the heating temperature is, for example, 90-160° C., and the heating time is, for example, 2-4 minutes. The adhesive layer 21 and the laser marking layer 22 can be produced in the form of a spacer, respectively, as described above. Thereafter, the exposed surfaces of the adhesive layer 21 and the laser marking layer 22 are bonded together to form the back adhesive film 20 having a laminated structure of the adhesive layer 21 and the laser marking layer 22 .

Next, the adhesive layer 12 side of the dicing tape 10 is attached to the side of the back adhesive film 20 (the laser marking layer 22 in the case of having the laser marking layer 22 ) obtained above. The bonding temperature is, for example, 30 to 50° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm. When the adhesive layer 12 is the aforementioned radiation-curable adhesive layer, the adhesive layer 12 may be irradiated with radiation such as ultraviolet rays before the bonding, or the adhesive layer may be irradiated from the side of the substrate 11 after the bonding. 12 Exposure to radiation such as ultraviolet rays. Alternatively, during the manufacturing process of the dicing tape-integrated back adhesive film 1, such radiation exposure may not be performed (in this case, the adhesive layer 12 may be irradiated during the use of the dicing tape-integrated back adhesive film 1). radiation hardening). When the adhesive layer 12 is an ultraviolet curable type, the amount of ultraviolet irradiation for curing the adhesive layer 12 is, for example, 50 to 500 mJ/cm ² . The area (irradiated area R) where irradiation is performed as a measure for reducing the adhesive force of the adhesive layer 12 in the dicing tape integrated back adhesive film 1 is, for example, the back adhesive film 20 in the adhesive layer 12 as shown in FIGS. 1 and 2 The area in the bonding area except its peripheral part.

In the above-mentioned manner, for example, the dicing tape-integrated back surface adhesive film 1 shown in FIGS. 1 and 2 can be produced.

[Manufacturing method of semiconductor device] A semiconductor device can be manufactured using the dicing tape-integrated back adhesive film of the present invention. Specifically, a semiconductor device can be manufactured by a manufacturing method including the step of: attaching the adhesive film to the back adhesive film side (especially the adhesive layer side) of the dicing tape-integrated back adhesive film of the present invention. The step on the back of the semiconductor wafer (attaching step); the step of forming a modified region along the planned division line of the semiconductor wafer by laser light irradiation (laser light irradiation step); under relatively low temperature conditions, make the present invention The step of expanding the dicing tape in the dicing tape-integrated back adhesive film, and cutting the semiconductor wafer and the back adhesive film along the above-mentioned dividing predetermined line to obtain the semiconductor wafer with the back adhesive film (singulation step); and A step of picking up the above-mentioned semiconductor wafer with a back-adhesive film (pick-up step). Furthermore, FIGS. 3 to 7 show steps in a method of manufacturing a semiconductor device using the dicing tape-integrated back adhesive film 1 shown in FIG. 2 , but the dicing tape-integrated back adhesive film 1 shown in FIG. 1 may also be used. The film 1 is a substitute for the dicing tape-integrated back adhesive film 1 of the present invention shown in FIG. 2 .

The manufacturing method of the above-mentioned semiconductor device may include a step of thinning the semiconductor wafer (wafer thinning step) before the above-mentioned attaching step. In the above-mentioned wafer thinning step, as shown in FIGS. The grinding process is performed to thin the semiconductor wafer W until it reaches a specific thickness. Grinding can be performed using a grinding device equipped with a grinding stone.

(attachment steps) In the above attaching step, for example, as shown in FIG. The back adhesive film 20 side (in particular, the adhesive layer 21 side) of the tape-integrated back adhesive film 1 . Bumps (not shown) for flip-chip mounting are provided on the surface of the semiconductor wafer 30 . By using the dicing tape-integrated back adhesive film of the present invention, a modified region can be formed later, so there is no need to form a modified region on the semiconductor wafer 30 at this stage, and therefore, the semiconductor wafer will not be damaged by the semiconductor wafer 30. The pressure at the time of attaching is submerged into the tape T1 for wafer processing. Then, as shown in FIG. 4( b ), the tape T1 for wafer processing is peeled off from the semiconductor wafer 30 . By using the dicing tape-integrated back adhesive film of the present invention, there is no need to form a modified region on the semiconductor wafer 30. Therefore, when the tape T1 for wafer processing is peeled off, the semiconductor wafer whose peripheral portion is cut will not be separated from the semiconductor wafer. Wafer processing tape T1 is peeled off at the same time.

(Thermohardening step) When the back adhesive film has a thermosetting adhesive layer, it is preferable to include a step of thermosetting the adhesive layer in the back adhesive film (thermosetting step) after the above-mentioned attaching step. For example, in the above-mentioned thermosetting step, heat treatment for thermosetting the adhesive layer 21 is performed. The heating temperature is preferably from 80 to 200°C, more preferably from 100 to 150°C. The heating time is preferably from 0.5 to 5 hours, more preferably from 1 to 3 hours. Specifically, the heat treatment is performed at 120° C. for 2 hours, for example. In the thermal hardening step, by thermal hardening of the adhesive layer 21, the adhesive force between the back adhesive film 20 and the semiconductor wafer 30 of the dicing tape-integrated back adhesive film 1 is improved, and the dicing tape-integrated back adhesive film 1 and the semiconductor wafer 30 are improved. The bonding film 20 on the back surface improves the fixing and holding force of the wafer. In addition, when the back adhesive film does not have a thermosetting adhesive layer, for example, drying treatment can be carried out in the range of 50-100°C for several hours, thereby improving the wettability of the interface of the adhesive layer, and Wafer fixing and holding force is improved.

(Laser marking step) In the case where the back adhesive film has a laser marking layer, it is preferable to irradiate the laser marking layer with laser from the substrate side of the dicing tape in the above-mentioned manufacturing method of the semiconductor device to perform laser marking. The step (laser marking step). The laser marking step is preferably performed after the above-mentioned thermosetting step. Specifically, in the laser marking step, for example, the laser marking layer 22 is irradiated with laser light from the side of the substrate 11 of the dicing tape 10 to perform laser marking. By this laser marking step, various information such as character information or graphic information can be engraved on each semiconductor wafer one by one. In the laser marking step, laser marking can be performed on a plurality of semiconductor wafers at one time and with high efficiency in one laser marking process. Examples of the laser used in the laser marking step include gas lasers and solid lasers. Examples of gas lasers include carbon dioxide lasers (CO ₂ lasers) and excimer lasers. As a solid-state laser, Nd:YAG laser is mentioned, for example. Furthermore, the laser marking step may be performed for each semiconductor wafer one by one after the singulation step described below, after the pick-up step, and the like.

Furthermore, before the above-mentioned sticking step, between the above-mentioned sticking step and the above-mentioned thermosetting step, between the above-mentioned thermosetting step and the above-mentioned laser marking step, and after the above-mentioned laser marking step, etc. Attach the ring-shaped frame 41 on the adhesive layer 12 of the dicing tape 10 in the integrated back adhesive film 1, and then fix the integrated back adhesive film 1 with the integrated dicing tape 1 attached to the semiconductor wafer 30 on the expansion device Holder 42.

(Laser light irradiation step) In the above-mentioned laser light irradiation step, for example, as shown in FIG. The laser light that aligns the focused spot on the inside of the semiconductor wafer 30 forms a modified region 30 a in the semiconductor wafer 30 due to ablation caused by multiphoton absorption. The modified region 30a is a weakened region used to separate the semiconductor wafer 30 into semiconductor wafer units. The method of forming the modified region 30a on the planned division line by irradiation of laser light in the semiconductor wafer 30 is described in detail in Japanese Patent Application Laid-Open No. 2002-192370, but the laser light in this embodiment The irradiation conditions are appropriately adjusted within the range of the following conditions, for example. <Laser light irradiation conditions> (A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser wavelength 1064 nm, 1088 nm, 1099 nm, or 1342 nm laser light spot area 3.14×10 ^-8 cm ² oscillation Form Q Switching pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00 Polarization characteristics Linear polarized light (B) Focusing lens magnification 100 times or less NA 0.55 Transmittance relative to laser light wavelength 100% or less (C) The moving speed of the stage for mounting the semiconductor substrate is 280 mm/sec or less

(Singulation step) In the above-mentioned singulation step, for example, as shown in FIG. The back adhesive film 20 of the dicing tape integrated back adhesive film 1 is cut into small pieces of the back adhesive film 20 ′ to obtain the semiconductor wafer 31 with the back adhesive film. Specifically, in the cold expansion step, cracks are formed in the fragile reformed region 30 a in the semiconductor wafer 30 to separate the semiconductor wafer 31 into pieces. In addition, in the cold expansion step, in the back adhesive film 20 that is in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region where each semiconductor chip 31 of the semiconductor wafer 30 is in close contact, and On the one hand, the tensile stress generated in the dicing tape 10 acts on the portion in the vertical direction in the drawing of the crack formation portion of the wafer in a state where such deformation suppression effect does not occur. As a result, the portion in the vertical direction in the figure of the crack formation portion located between the semiconductor wafers 31 in the back adhesive film 20 is cut off.

In the cold expansion step, the lifting member 43 in the shape of a hollow cylinder equipped with an expansion device is raised against the crystal cutting tape 10 at the lower side in the drawing of the tape-integrated back adhesive film 1, and the semiconductor bonded thereon is raised. The dicing tape 10 of the dicing tape-integrated back adhesive film 1 of the wafer 30 expands so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30 . The expansion is carried out under the condition that a tensile stress within the range of 15-32 MPa, preferably 20-32 MPa is generated in the dicing tape 10 . The temperature condition in the cold expansion step is, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed (the speed at which the lifting member 43 is raised) in the cold expansion step is preferably 0.1 to 300 mm/sec. Also, the amount of expansion in the cold expansion step is preferably 3 to 25 mm

After the cutting caused by the above-mentioned expansion, as shown in FIG. 5( c ), the lifting member 43 is lowered to release the expanded state of the dicing tape 10 . Thereafter, an expansion step for widening the spacing distance between the semiconductor wafers 31 with the back adhesive film may be performed. For example, in the state where the lifting member 43 is raised again, the semiconductor wafer 31 is vacuum-adsorbed from the crystal cutting belt 10 side and fixed on the platform, and the expanded state is released, and the lifting area of the cutting crystal belt 10 is heated to shrink (heat Shrinkage), whereby the distance between the semiconductor wafers 31 separated by expansion can be maintained. The expansion amount (lifting amount) when the jacking member 43 is raised again is, for example, 3 to 25 mm, and the expansion speed (the speed at which the jacking member 43 is raised) is, for example, 0.1 to 300 mm/sec. The distance between the heater and the lifting area during thermal shrinkage is, for example, 5-100 mm, and the rotation speed of the crystal cutting belt is, for example, 1-10°/sec.

(Radiation irradiation step) The above method of manufacturing a semiconductor device may include a step of irradiating the adhesive layer with radiation from the substrate side (radiation irradiation step). When the adhesive layer of the dicing tape is a layer formed by using a radiation-curable adhesive, after the above-mentioned singulation step, the adhesive layer may be irradiated with radiation such as ultraviolet rays from the side of the substrate instead of the dicing tape. The above-mentioned radiation exposure during the manufacturing process of the integrated back adhesive film. The irradiation dose is, for example, 50 to 500 mJ/cm ² . The area where irradiation is performed as an adhesive reduction measure for the adhesive layer in the dicing tape-integrated back adhesive film (the irradiation area R shown in Figures 1 and 2) is, for example, the area where the back adhesive film in the adhesive layer is bonded The area other than its peripheral part.

(pickup steps) The above-mentioned pick-up step may be performed, for example, after a cleaning step of cleaning the semiconductor wafer 31 side in the dicing tape 10 with the semiconductor wafer 31 with a back-adhesive film attached using a cleaning solution such as water, for example, if necessary. For example, as shown in FIG. 6 , the semiconductor wafer 31 with the back adhesive film attached is picked up from the dicing tape 10 . For example, in the state where the dicing tape 10 with the annular frame 41 is held in the holder 42 of the device, the semiconductor wafer 31 with the back surface adhesive film to be picked up is picked up at the lower side of the dicing tape 10 in the figure. The pin member 51 of the mechanism rises and is pushed up by the crystal cutting belt 10 , and is then sucked and held by the sucking jig 52 . In the pick-up step, the jacking speed of the pin member 51 is, for example, 1-100 mm/sec, and the jacking amount of the pin member 51 is, for example, 50-3000 μm.

(Flip Chip Mounting Steps) It is preferable that the manufacturing method of the above-mentioned semiconductor device includes a step of performing flip-chip mounting on the semiconductor wafer 31 with the back adhesive film 31 after the pick-up step (flip-chip step). For example, as shown in FIG. 7 , the semiconductor wafer 31 with the back adhesive film attached is flip-chip mounted on the mounting substrate 61 . Examples of the mounting substrate 61 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. Through flip-chip mounting, the semiconductor chip 31 is electrically connected to the mounting substrate 61 through the bumps 62 . Specifically, a substrate (electrode pad) (not shown) on the circuit formation surface side of the semiconductor wafer 31 is electrically connected to a terminal portion (not shown) on the mounting substrate 61 through bumps 62 . The bump 62 is, for example, a solder bump. Moreover, a thermosetting underfill 63 is interposed between the semiconductor wafer 31 and the mounting substrate 61 .

A semiconductor device can be manufactured using the dicing tape-integrated back adhesive film of the present invention as described above. [Example]

The following examples are given to describe the present invention in more detail, but the present invention is not limited by these examples.

Example 1 <Preparation of crystal dicing tape> In a reaction vessel equipped with a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate, 19 parts by mass of 2-hydroxyethyl acrylate part, 0.4 parts by mass of benzoyl peroxide as a polymerization initiator, and 80 parts by mass of toluene as a polymerization solvent were stirred at 60° C. under a nitrogen atmosphere for 10 hours (polymerization reaction). Thereby, a polymer solution containing the acrylic polymer _P1 was obtained. Next, the mixture containing the polymer solution containing the acrylic polymer P ₁ and 2-methacryloxyethyl isocyanate (MOI) was stirred (addition reaction) for 60 hours at 50° C. in an air environment . In this reaction solution, the compounding quantity of MOI was 12 mass parts with respect to 100 mass parts of said acrylic-type polymer _P1 . By this addition reaction, the polymer solution containing the acrylic polymer _P2 which has a methacrylate group in a side chain was obtained. Next, to this polymer solution, _0.75 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.), 2 parts by mass of photopolymerizable An initiator (trade name "Irgacure 651", manufactured by BASF Corporation) and toluene were mixed together to obtain an adhesive composition with a solid content concentration of 28% by mass. Next, the adhesive composition was applied using an applicator on the silicone release-treated surface of a PET separator (thickness 50 μm) having a silicone release-treated surface to form an adhesive composition layer . Next, the composition layer was desolvated by heating at 120° C. for 2 minutes to form an adhesive layer with a thickness of 30 μm on the PET separator. Next, using a laminating machine, the embossed surface of the base material is in contact with the adhesive layer, and the adhesive layer fills the recesses of the embossed surface at room temperature on the adhesive layer. The exposed surface was bonded to a polypropylene film (trade name "SCO40PP1-BL", thickness 40 μm, manufactured by Kurabo Textile Co., Ltd.) as a base material. This bonded body was then stored at 23° C. for 72 hours. The crystal cutting tape of Example 1 was produced in the above-mentioned manner.

<Preparation of back adhesive film> 100 parts by mass of acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase Chemtex Co., Ltd.), epoxy resin E ₁ (trade name "EPPN-501HY", Japan Kayaku Co., Ltd.) 9 parts by mass, phenol resin H ₁ (trade name "MEH7851-H", Meiwa Chemical Co., Ltd.) 12 parts by mass, filler F ₁ (trade name "SO-25R", average particle diameter : 0.5 μm, manufactured by Admatechs Co., Ltd.) 69 parts by mass, and 7 parts by mass of colorant _D1 (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) were added to methyl ethyl ketone and mixed , to obtain a resin composition with a solid content concentration of 28% by mass. Next, the resin composition was applied using an applicator on the silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was desolventized by heating at 130° C. for 2 minutes, and the back adhesive film of Example 1 with a thickness of 25 μm was produced on the PET separator.

＜Manufacture of back-adhesive film integrated with dicing tape＞ Use a hand roller to bond the adhesive layer exposed in the dicing tape of the above-mentioned Example 1 and the surface exposed in the back adhesive film of the above-mentioned Example 1 to produce a laminate including the dicing tape and the back adhesive film The structure is cut crystal with an integrated back-adhesive film.

Example 2 <Preparation of Back Adhesive Film> 100 parts by mass of acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase Chemtex Co., Ltd.), epoxy resin E ₁ (trade name "EPPN-501HY ", manufactured by Nippon Kayaku Co., Ltd.) 9 parts by mass, phenol resin H ₁ (trade name "MEH7851-H", manufactured by Meiwa Chemical Co., Ltd.) 12 parts by mass, filler F ₁ (trade name "SO-25R", Average particle diameter: 0.5 μm, manufactured by Admatechs Co., Ltd.) 69 parts by mass, and 4 parts by mass of colorant _D1 (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied using an applicator on the silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was desolvated by heating at 130° C. for 2 minutes, and the back adhesive film of Example 2 with a thickness of 25 μm was produced on the PET separator.

＜Manufacture of back-adhesive film integrated with dicing tape＞ Use a hand roller to bond the adhesive layer exposed in the dicing tape of the above-mentioned embodiment 1 and the surface exposed in the back adhesive film of the above-mentioned embodiment 2 to produce a laminate including the dicing tape and the back adhesive film The structure is cut crystal with an integrated back-adhesive film.

Example 3 <Preparation of Back Adhesive Film> 100 parts by mass of acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase Chemtex Co., Ltd.), epoxy resin E ₁ (trade name "EPPN-501HY ", manufactured by Nippon Kayaku Co., Ltd.) 9 parts by mass, phenol resin H ₁ (trade name "MEH7851-H", manufactured by Meiwa Chemical Co., Ltd.) 12 parts by mass, filler F ₂ (trade name "YA050C-MJI", Average particle diameter: 0.05 μm, manufactured by Admatechs Co., Ltd.) 69 parts by mass, and 4 parts by mass of coloring agent _D1 (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied using an applicator on the silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was desolvated by heating at 130° C. for 2 minutes, and the back adhesive film of Example 3 with a thickness of 25 μm was produced on the PET separator.

＜Manufacture of back-adhesive film integrated with dicing tape＞ Use a hand roller to bond the adhesive layer exposed in the dicing tape of the above-mentioned embodiment 1 and the surface exposed in the back adhesive film of the above-mentioned embodiment 3 to produce a laminate comprising the dicing tape and the back adhesive film The structure is cut crystal with an integrated back-adhesive film.

Example 4 <Preparation of Back Adhesive Film> (Preparation of Adhesive Layer) Acrylic resin A ₂ (trade name "Teisan Resin SG-708-6", manufactured by Nagase Chemtex Co., Ltd.) 100 parts by mass, epoxy resin E ₂ (trade name "YSLV-80XY", manufactured by Tohto Chemical Co., Ltd.) 19 parts by mass, epoxy resin E ₃ (trade name "KI-3000-4", manufactured by Tohto Chemical Co., Ltd.) 78 parts by mass, phenol Resin H ₂ (trade name "MEH7851-SS", manufactured by Meiwa Chemical Co., Ltd.) 89 parts by mass, filler F ₁ (trade name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatechs Co., Ltd.) 190 parts by mass Parts were added to methyl ethyl ketone and mixed to obtain a resin composition with a solid content concentration of 28% by mass. Next, the resin composition was applied using an applicator on the silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was desolventized by heating at 130° C. for 2 minutes, and an adhesive layer with a thickness of 8 μm was formed on the PET separator.

(Preparation of laser marking layer) Acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase Chemtex Co., Ltd.) 100 parts by mass, epoxy resin E ₃ (trade name "KI-3000-4 ", manufactured by Tohto Chemical Co., Ltd.) 44 parts by mass, epoxy resin E ₄ (trade name "JER YL980", manufactured by Mitsubishi Chemical Corporation) 29 parts by mass, phenol resin H ₂ (trade name "MEH7851-SS", Meiwa Chemical Co., Ltd.) 77 parts by mass, filler F ₁ (trade name "SO-25R", average particle size: 0.5 μm, Admatechs Co., Ltd.) 175 parts by mass, colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) and 21 parts by mass of thermosetting catalyst Z ₁ (trade name "TPP", manufactured by Hokshin Chemical Industries Co., Ltd.) were added to methyl ethyl ketone and carried out Mixed to obtain a resin composition with a solid content concentration of 28% by mass. Next, the resin composition was applied using an applicator on the silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was desolvated and thermally cured by heating at 130° C. for 2 minutes to form a 17 μm thick laser marking layer (thermally cured layer) on the PET separator.

The laser marking layer on the PET separator produced by the above method and the adhesive layer on the PET separator were bonded together using a laminating machine. Specifically, the exposed surfaces of the laser marking layer and the adhesive layer were bonded together under the conditions of a temperature of 100°C and a pressure of 0.6 MPa. The back adhesive film of Example 4 was produced in the above-mentioned manner.

＜Manufacture of back-adhesive film integrated with dicing tape＞ The PET spacer on the side of the laser marking layer is peeled off from the back adhesive film of the above-mentioned Example 4, and the adhesive layer exposed in the dicing tape of the above-mentioned Example 1 is bonded to the PET spacer in the back adhesive film by using a hand roller. The exposed surface of the separator. In the above-mentioned manner, a dicing tape-integrated back adhesive film having a laminated structure including a dicing tape and a back adhesive film was fabricated.

Example 5 <Preparation of Back Adhesive Film> (Preparation of Adhesive Layer) Acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase Chemtex Co., Ltd.) 100 parts by mass, epoxy resin E ₂ (trade name "YSLV-80XY", manufactured by Tohto Chemical Co., Ltd.) 19 parts by mass, epoxy resin E ₃ (trade name "KI-3000-4", manufactured by Tohto Chemical Co., Ltd.) 52 parts by mass, epoxy resin E ₄ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) 22 parts by mass, phenol resin H ₂ (trade name "MEH7851-SS", manufactured by Meiwa Chemical Co., Ltd.) 76 parts by mass, filler F ₁ (trade name name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatechs Co., Ltd.) 177 parts by mass, colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) 15 parts by mass, and Add 5 parts by mass of thermosetting catalyst Z ₂ (trade name "2PHZ-PW", manufactured by Shikoku Chemicals Co., Ltd.) to methyl ethyl ketone and mix to obtain a resin composition with a solid content concentration of 28% by mass thing. Next, the resin composition was applied using an applicator on the silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was desolvated by heating at 130° C. for 2 minutes, and an adhesive layer (thermosetting layer) with a thickness of 8 μm was produced on the PET separator.

(Preparation of laser marking layer) 100 parts by mass of acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase Chemtex Co., Ltd.), epoxy resin E ₁ (trade name "EPPN-501HY", Nippon Kayaku Co., Ltd.) 66 parts by mass, epoxy resin E ₃ (trade name "KI-3000-4", Tohto Kasei Co., Ltd.) 52 parts by mass, epoxy resin E ₄ (trade name "JER YL980 ", manufactured by Mitsubishi Chemical Co., Ltd.) 22 parts by mass, phenol resin H ₁ (trade name "MEH7851-H", manufactured by Meiwa Chemical Co., Ltd.) 84 parts by mass, filler F ₁ (trade name "SO-25R", average Particle size: 0.5 μm, manufactured by Admatechs Co., Ltd.) 177 parts by mass, colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) 15 parts by mass, and thermosetting catalyst Z ₁ (trade name Name "TPP", Hokshin Chemical Industry Co., Ltd.) 24 parts by mass were added to methyl ethyl ketone and mixed to obtain a resin composition with a solid content concentration of 28 mass%. Next, the resin composition was applied using an applicator on the silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was desolvated by heating at 130° C. for 2 minutes, and a laser marking layer with a thickness of 17 μm was formed on the PET separator.

The laser marking layer on the PET separator produced by the above method and the adhesive layer on the PET separator were bonded together using a laminating machine. Specifically, the exposed surfaces of the laser marking layer and the adhesive layer were bonded together under the conditions of a temperature of 100°C and a pressure of 0.6 MPa. The back adhesive film of Example 5 was produced in the above-mentioned manner.

＜Manufacture of back-adhesive film integrated with dicing tape＞ The PET spacer on the side of the laser marking layer is peeled off from the back adhesive film of the above-mentioned Example 5, and the adhesive layer exposed in the dicing tape of the above-mentioned Example 1 is bonded to the PET spacer in the back adhesive film by using a hand roller. The exposed surface of the separator. In the above-mentioned manner, a dicing tape-integrated back adhesive film having a laminated structure including a dicing tape and a back adhesive film was fabricated.

Example 6 <Preparation of Back Adhesive Film> (Preparation of Laser Marking Layer) Acrylic resin A ₂ (trade name "Teisan Resin SG-708-6", manufactured by Nagase Chemtex Co., Ltd.) 100 parts by mass, acrylic Resin A ₃ (trade name "Teisan Resin SG-N50", manufactured by Nagase Chemtex Co., Ltd.) 25 parts by mass, epoxy resin E ₃ (trade name "KI-3000-4", manufactured by Tohto Chemical Co., Ltd.) 64 parts by mass Parts, epoxy resin E ₄ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) 28 parts by mass, phenol resin H ₂ (trade name "MEH7851-SS", manufactured by Meiwa Chemical Co., Ltd.) 96 parts by mass, Filler F ₁ (trade name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatechs Co., Ltd.) 219 parts by mass, colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) 16 parts by mass and 27 parts by mass of thermosetting catalyst Z ₁ (trade name "TPP", manufactured by Hokshin Chemical Industry Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain a solid content concentration of 28% by mass resin composition. Next, the resin composition was applied using an applicator on the silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was desolvated and thermally cured by heating at 130° C. for 2 minutes to form a 17 μm thick laser marking layer (thermally cured layer) on the PET separator.

The laser marking layer on the PET spacer produced by the above method and the adhesive layer on the PET spacer produced in the above-mentioned Example 4 were bonded together using a laminating machine. Specifically, the exposed surfaces of the laser marking layer and the adhesive layer were bonded together under the conditions of a temperature of 100°C and a pressure of 0.6 MPa. The back adhesive film of Example 6 was produced in the above-mentioned manner.

＜Manufacture of back-adhesive film integrated with dicing tape＞ The PET spacer on the side of the laser marking layer is peeled off from the back adhesive film of the above-mentioned Example 6, and the adhesive layer exposed in the dicing tape of the above-mentioned Example 1 and the PET spacer in the back adhesive film are attached using a hand roller. The exposed surface of the separator. In the above-mentioned manner, a dicing tape-integrated back adhesive film having a laminated structure including a dicing tape and a back adhesive film was fabricated.

Comparative Example 1 <Preparation of Back Adhesive Film> 100 parts by mass of acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase Chemtex Co., Ltd.), epoxy resin E ₁ (trade name "EPPN-501HY ", manufactured by Nippon Kayaku Co., Ltd.) 9 parts by mass, phenol resin H ₁ (trade name "MEH7851-H", manufactured by Meiwa Chemical Co., Ltd.) 12 parts by mass, filler F ₁ (trade name "SO-25R", Average particle diameter: 0.5 μm, manufactured by Admatechs Co., Ltd.) 69 parts by mass, colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) 7 parts by mass, and heavy metal oxide colorant D ₂ (average particle diameter 0.02 μm) 17 mass parts were added to methyl ethyl ketone and mixed to obtain a resin composition with a solid content concentration of 28 mass%. Next, the resin composition was applied using an applicator on the silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was desolventized by heating at 130° C. for 2 minutes, and a back adhesive film of Comparative Example 1 with a thickness of 25 μm was produced on the PET separator.

＜Manufacture of back-adhesive film integrated with dicing tape＞ The adhesive layer exposed in the dicing tape of the above-mentioned Example 1 and the surface exposed in the back-adhesive film of the above-mentioned Comparative Example 1 were bonded using a hand roller to produce a laminate comprising the dicing tape and the back-adhesive film The structure is cut crystal with an integrated back-adhesive film.

Comparative example 2 ＜Production of crystal cutting tape＞ Using a laminating machine, at room temperature, on the exposed surface of the adhesive layer produced in Example 1, a polypropylene film (trade name "SCO40PP1-BL", thickness 40 μm, Kurabo Textile Co., Ltd. (manufactured by the company) is bonded in such a way that the mirror polished surface of the base material is in contact with the adhesive layer. This bonded body was then stored at 23° C. for 72 hours. The crystal cutting tape of Comparative Example 2 was produced in the above-mentioned manner.

＜Manufacture of back-adhesive film integrated with dicing tape＞ The adhesive layer exposed in the dicing tape of the above comparative example 2 and the surface exposed in the back adhesive film of the above comparative example 1 were attached using a hand roller to produce a laminate including the dicing tape and the back adhesive film The structure is cut crystal with an integrated back-adhesive film.

Comparative Example 3 <Preparation of Back Adhesive Film> (Preparation of Adhesive Layer) Acrylic resin A ₂ (trade name "Teisan Resin SG-708-6", manufactured by Nagase Chemtex Co., Ltd.) 100 parts by mass, epoxy resin E ₂ (trade name "YSLV-80XY", manufactured by Tohto Chemical Co., Ltd.) 19 parts by mass, epoxy resin E ₃ (trade name "KI-3000-4", manufactured by Tohto Chemical Co., Ltd.) 78 parts by mass, phenol Resin H ₂ (trade name "MEH7851-SS", manufactured by Meiwa Chemical Co., Ltd.) 89 parts by mass, filler F ₁ (trade name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatechs Co., Ltd.) 190 parts by mass and 17 parts by mass of heavy metal oxide colorant D ₂ (average particle diameter: 0.02 μm) were added to methyl ethyl ketone and mixed to obtain a resin composition with a solid content concentration of 28% by mass. Next, the resin composition was applied using an applicator on the silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface to form a resin composition layer. Next, the composition layer was desolventized by heating at 130° C. for 2 minutes, and an adhesive layer with a thickness of 8 μm was formed on the PET separator.

A laminating machine was used to bond the laser marking layer on the PET spacer produced in Example 4 above, and the adhesive layer on the PET spacer produced by the above method. Specifically, the exposed surfaces of the laser marking layer and the adhesive layer were bonded together under the conditions of a temperature of 100°C and a pressure of 0.6 MPa. The back adhesive film of Comparative Example 3 was produced in the above-mentioned manner.

＜Manufacture of back-adhesive film integrated with dicing tape＞ Peel off the PET spacer on the side of the laser marking layer from the back adhesive film of Comparative Example 3 above, and use a hand roller to attach the adhesive layer exposed in the dicing tape of the above Example 1 to the PET spacer in the back adhesive film. The exposed surface of the separator. In the above-mentioned manner, a dicing tape-integrated back adhesive film having a laminated structure including a dicing tape and a back adhesive film was fabricated.

＜Evaluation＞ The following evaluations were performed on the back adhesive film and the dicing tape-integrated back adhesive film obtained in Examples and Comparative Examples. The results are shown in Tables 1 and 2.

(1) Transmittance The back adhesive film and dicing tape-integrated back adhesive film obtained in Examples and Comparative Examples were respectively measured at 1000 to 1342 nm using a spectrophotometer (trade name "V-670", manufactured by JASCO Corporation). The transmittance measurement in the wavelength region. In addition, the case of measuring without an integrating sphere is set as the in-line transmittance, and the case of measuring under the condition of an integrating sphere is set as the total light transmittance. According to the measurement results, for the back adhesive film, the linear transmittance A of infrared rays with a wavelength of 1000 nm, the linear transmittance B of infrared rays with a wavelength of 1342 nm, and the ratio [linear transmittance A (%)/linear transmittance B ( %)], and the ratio of the in-line transmittance A' in the wavelength range of 1000 to 1342 nm to the above-mentioned in-line transmittance B [in-line transmittance A'(%)/in-line transmittance B(%)]. Also, for the dicing tape-integrated back adhesive film, the total light transmittance C and the in-line transmittance D of infrared rays with a wavelength of 1342 nm, and their ratio [total light transmittance C (%)/in-line transmittance D ( %)].

(2) Haze The haze of the dicing tape-integrated back adhesive film obtained in Examples and Comparative Examples was calculated based on the following formula using the total light transmittance C and the in-line transmittance D obtained in the transmittance measurement above. Haze (%) = (total light transmittance C - straight line transmittance D) / total light transmittance C

(3) Arithmetic mean surface roughness The dicing tape-integrated back adhesive film obtained in Examples and Comparative Examples was measured at a magnification of 50 times using an optical interference surface roughness meter (trade name "WykoNT9100", manufactured by VEECO Co., Ltd., Japan), and Measure the arithmetic average surface roughness (Ra) of the front side of the back adhesive film and the back side of the substrate respectively.

(4) cut evaluation For the dicing tape-integrated back adhesive film obtained in Examples and Comparative Examples, the cutting evaluation was performed as follows. First, under the conditions of temperature 80°C and pressure 0.15 MPa, a semiconductor wafer with a thickness of 300 μm and a size of 12 inches is bonded to the back surface of the dicing tape integrated by bonding the ring frame to the adhesive layer. The back of the film is in close contact with the film surface. Next, aim the light-concentrating point at the inside of the semiconductor wafer, and irradiate laser light with a wavelength of 1064 nm from the side of the dicing tape along the lattice-shaped (2 mm×2 mm) division line to form a laser beam inside the semiconductor wafer. modified area. Thereafter, each annular frame was subjected to heat treatment at a temperature of 80° C. for 1 hour. Thereafter, the semiconductor wafer and the back adhesive film were cut using a Die Separator (trade name "DDS2300", manufactured by DISCO Co., Ltd.). Specifically, first, in the cold expansion unit, cool at a temperature of -15°C for 2 minutes, the speed (expansion speed) during cold expansion is 200 mm/s, and the jacking amount (expansion amount) of the jacking part is 15 mm Under the conditions of cold expansion and cut off the semiconductor wafer. After that, keep it in the expanded state for 1 minute, and then expand it at a speed (expansion speed) of 1 mm/sec and an expansion amount of 15 mm, and set the distance between the heater and the dicing tape to 20 mm. While rotating the cutting tape at a rotation speed of 5°/sec, the cutting tape at the top was heat-shrunk at 200°C. At this time, among the four sides of each semiconductor wafer, the number of cut sides of the semiconductor wafer and the back adhesive film was counted, and the ratio of the number of cut sides to the number of all sides was calculated as the cut rate. Furthermore, the same evaluation was performed by changing the wavelength of the irradiated laser light to each wavelength of 1080 nm, 1099 nm, and 1342 nm. In addition, in all the evaluations at 1064 nm, 1080 nm, 1099 nm, and 1342 nm, the case where the cut-off rate was 90% or more was evaluated as ◎, the case where it was 60% or more and less than 90% was evaluated as ○, and the case where it was 90% or more was evaluated as ○. The case where 30% or more and less than 60% was evaluated as △, and the case where it was less than 30% was evaluated as ×. Furthermore, in the case of using the dicing tape-integrated back adhesive film in all the examples, chipping of the semiconductor wafer and peeling from the back adhesive film did not occur.

[Table 1]

[Table 2]

1‧‧‧Cutting tape integrated back adhesive film 10‧‧‧Cutting tape 11‧‧‧Substrate 12‧‧‧adhesive layer 20‧‧‧Back adhesive film 20'‧‧‧Back Adhesive Film 21‧‧‧adhesive layer 21a‧‧‧Fitting surface 22‧‧‧Laser marking layer 30‧‧‧semiconductor wafer 30a‧‧‧modified area 31‧‧‧semiconductor chip 41‧‧‧ring frame 42‧‧‧Retainer 43‧‧‧Jacking up components 51‧‧‧pin component 52‧‧‧Adsorption fixture 61‧‧‧Installing the substrate 62‧‧‧Bump 63‧‧‧Underfill R‧‧‧irradiation area T1‧‧‧Wafer processing tape (surface protection film) W‧‧‧semiconductor wafer Wa‧‧‧back

Fig. 1 is a schematic diagram (front cross-sectional view) showing an embodiment of the dicing tape-integrated semiconductor backside adhesive film of the present invention. Fig. 2 is a schematic view (front cross-sectional view) showing another embodiment of the dicing tape-integrated semiconductor backside adhesive film of the present invention. 3(a), (b) are schematic diagrams (front sectional views) showing an embodiment of the wafer thinning step. Fig. 4(a), (b) is a schematic diagram (front sectional view) showing an embodiment of the attaching step. 5( a ) to ( c ) are schematic diagrams (front sectional views) showing one embodiment of the singulation process. Fig. 6 is a schematic diagram (front sectional view) showing an embodiment of the picking-up process. Fig. 7 is a schematic diagram (front sectional view) showing an embodiment of a flip-chip mounting procedure.

1‧‧‧Cutting tape integrated back adhesive film

10‧‧‧Cutting tape

11‧‧‧Substrate

12‧‧‧adhesive layer

20‧‧‧Back adhesive film

21‧‧‧adhesive layer

21a‧‧‧Fitting surface

R‧‧‧irradiation area

Claims (7)

A crystal-cutting tape-integrated adhesive film on the back of a semiconductor, comprising: a crystal-cutting tape having a laminated structure including a base material and an adhesive layer; Adhesive layer; and the in-line transmittance A of infrared rays with a wavelength of 1000nm and the in-line transmittance B of infrared rays with a wavelength of 1342nm of the above-mentioned adhesive film on the back of the semiconductor are both more than 20%, and the ratio of the above-mentioned in-line transmittance A to the above-mentioned in-line transmittance B [ The in-line transmittance A(%)/in-line transmittance B(%)] is 0.3-1.0; the semiconductor back adhesive film has an adhesive layer, and the adhesive layer contains a filler and/or a colorant. Such as the crystal-cutting tape-integrated adhesive film on the back of the semiconductor according to claim 1, wherein the ratio of the linear transmittance A' of the infrared ray in the wavelength range of 1000 to 1342 nm of the above-mentioned semiconductor rear adhesive film to the above-mentioned linear transmittance B [linear transmittance A'( %)/linear transmittance B(%)] is 0.3~1.0. Such as the crystal-cutting tape-integrated adhesive film on the back of semiconductor in claim 1, wherein the ratio of the total light transmittance C to the linear transmittance D of infrared rays with a wavelength of 1342nm [total light transmittance C (%)/linear transmittance D (%) ] is 1.0~5.0. Such as the crystal-cut tape-integrated adhesive film on the back of semiconductors as claimed in item 2, wherein the ratio of the total light transmittance C to the linear transmittance D of infrared rays with a wavelength of 1342nm [total light transmittance C (%)/linear transmittance D (%) ] is 1.0~5.0. According to any one of Claims 1 to 4, the haze value of the dicing tape-integrated semiconductor back adhesive film is 80% or less. The semiconductor back adhesive film integrated with dicing tape according to any one of claims 1 to 4, wherein the arithmetic average surface roughness of the back surface of the substrate and the front surface of the semiconductor back adhesive film is 100 nm or less. The semiconductor back adhesive film integrated with dicing tape as claimed in claim 5, wherein the arithmetic average surface roughness of the back surface of the substrate and the front surface of the semiconductor back adhesive film are both 100 nm or less.

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