JP7015166B2 - Dicing tape integrated semiconductor back contact film - Google Patents

Description

The present invention relates to a semiconductor back contact film integrated with a dicing tape. More specifically, the present invention relates to a dicing tape-integrated semiconductor back-adhesion film that can be used in the manufacturing process of a semiconductor device.

In the manufacture of a semiconductor device including a semiconductor chip mounted on a flip chip, a semiconductor back contact film may be used as a film for forming a protective film on the so-called back surface of the chip. Further, such a semiconductor back contact film may be provided in a form integrated with the dicing tape (see Patent Documents 1 and 2).

A semiconductor back-adhesion film integrated with such a dicing tape (dicing tape-integrated semiconductor back-adhesion film) is used, for example, as follows. First, the semiconductor back-adhesion film surface of the dicing tape-integrated semiconductor back-adhesion film is attached to the semiconductor wafer as the work, and the back-adhesion film is thermally cured by heating in order to increase the adhesion of the back-adhesion film to the wafer. Next, while the wafer is held on the semiconductor back-adhesion film integrated with the dicing tape, blade dicing is performed to separate the wafer into chips. In the dicing step, the wafer is cut and individualized into chips, and the back contact film is cut into small film pieces having a size equivalent to the chips.

The blade dicing is a method generally used for individualizing semiconductor wafers, but the semiconductor chips obtained by blade dicing may be cracked or chipped. When chipping occurs due to dicing, cracks may expand to the circuit surface due to expansion and contraction of the chip during the mounting process on a semiconductor device or heating in a reliability test, which may lead to an increase in the defective product rate.

In recent years, there has been known a method of expanding a dicing tape in a dicing tape-integrated semiconductor back-adhesion film and undergoing a process for cutting the semiconductor back-adhesion film. In this method, for example, a surface protection film is attached to the surface of the semiconductor wafer (circuit forming surface) to protect the surface of the semiconductor wafer, and in this state, the planned division line in the semiconductor wafer is irradiated with laser light to form a modified region. By forming the semiconductor wafer, the semiconductor wafer can be easily divided on the planned division line, and then the semiconductor wafer is thinned by performing back contact, or the semiconductor wafer is thinned by performing back contact, and then the semiconductor wafer is in this state. The planned division line in the above is irradiated with laser light to form a modified region, the back surface of this semiconductor wafer is attached to the semiconductor back contact film surface of the semiconductor back contact film integrated with dicing tape, the surface protective film is peeled off, and then the surface protective film is peeled off. By stretching the dying tape of the semiconductor back-adhesion film integrated with the dying tape in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer by using the expanding device, both the semiconductor wafer and the semiconductor back-adhesion film are cut. Obtain individual semiconductor chips (semiconductor chips with semiconductor back-adhesion film).

Japanese Unexamined Patent Publication No. 2011-151360 International Publication No. 2014/092200

However, in the method of forming a modified region and then stretching the semiconductor wafer to split the semiconductor wafer, when the semiconductor wafer with the surface protective film having the modified region formed is attached to the semiconductor back contact film, the semiconductor is affected by the pressure at the time of attachment. The wafer may be cut at the modified region and the semiconductor chip may bite into the surface protective film. As a result, the semiconductor wafer may not be sufficiently attached to the semiconductor back-adhesion film, or chipping may occur in contact with an adjacent semiconductor chip. Further, when the surface protective film is peeled off after the semiconductor wafer with the surface protective film is attached to the semiconductor back contact film, the cut semiconductor chip on the outer peripheral portion may be peeled off together with the surface protective film.

The present invention has been made in view of the above problems, and an object thereof is a dicing tape integrated semiconductor capable of individualizing a semiconductor wafer without causing chipping of a semiconductor chip and peeling from a back contact film. The purpose is to provide a back contact film.

As a result of diligent studies to achieve the above object, the present inventors have releasably adhered to the dicing tape having a laminated structure including the base material and the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer in the dicing tape. A semiconductor back-adhesive film is provided, and the linear transmittance A of infrared rays having a wavelength of 1000 nm and the linear transmittance B of infrared rays having a wavelength of 1342 nm of the semiconductor back-adhesion film are both 20% or more. %) / Linear transmission rate B (%)] is 0.3 to 1.0. When a dicing tape-integrated semiconductor back-adhesion film is used, the semiconductor chip does not chip or peel off from the back-adhesion film. It was found that it is possible to individualize. The present invention has been completed based on these findings.

That is, the present invention comprises a dicing tape having a laminated structure including a base material and a pressure-sensitive adhesive layer, and a semiconductor back-adhesion film that is removably adhered to the pressure-sensitive adhesive layer in the dicing tape. In the adhesive film, both the linear transmittance A of infrared rays having a wavelength of 1000 nm and the linear transmittance B of infrared rays having a wavelength of 1342 nm are 20% or more, and the ratio of the linear transmittance A and the linear transmittance B [linear transmittance]. A dicing tape-integrated semiconductor back-adhesion film having a rate A (%) / linear transmittance B (%)] of 0.3 to 1.0 is provided. The semiconductor back-adhesion film integrated with the dicing tape having such a configuration can be used in the manufacturing process of the semiconductor device.

As described above, in the dicing tape-integrated semiconductor back-adhesion film of the present invention, the linear transmittance A of infrared rays having a wavelength of 1000 nm and the linear transmittance B of infrared rays having a wavelength of 1342 nm of the semiconductor back-adhesion film are both 20%. That is all. The semiconductor back-adhesion film in the dicing tape-integrated semiconductor back-adhesion film of the present invention having such a configuration transmits laser light (particularly, laser light including infrared rays having wavelengths of 1000 nm and 1342 nm) for forming a modified region. Since the rate is high, it is possible to form a modified region on the semiconductor wafer by laser light after sticking to the semiconductor back contact film. Therefore, it is not necessary to form a modified region on the semiconductor wafer before sticking to the semiconductor back-adhesion film, and the semiconductor does not chip the semiconductor chip at the time of sticking or peel off from the back-adhesion film at the time of peeling the surface protective tape. It is possible to individualize the wafer.

The dicing tape-integrated semiconductor back-adhesion film of the present invention further comprises the ratio of the linear transmittance A and the linear transmittance B of the semiconductor back-adhesion film [linear transmittance A (%) / linear transmittance B (%). )] Is 0.3 to 1.0. Since the semiconductor back-adhesion film in the dicing tape-integrated semiconductor back-adhesion film of the present invention has such a configuration, infrared rays having both wavelengths of 1000 nm and 1342 nm can be transmitted more evenly, so that a laser having both wavelengths can be transmitted. An equivalent modified region can be formed on a semiconductor wafer with light. Therefore, the types of laser light that can be used increase, and the versatility is excellent.

In the dicing tape-integrated semiconductor back-adhesion film of the present invention, the ratio of the linear transmittance A'of infrared rays in the wavelength range of 1000 to 1342 nm and the linear transmittance B of the semiconductor back-adhesion film [linear transmittance A'(%) / The linear transmittance B (%)] is preferably 0.3 to 1.0. When the semiconductor back-adhesion film in the dicing tape-integrated semiconductor back-adhesion film of the present invention has such a configuration, infrared rays in the region having a wavelength of 1000 to 1342 nm can be transmitted to the same extent as infrared rays having a wavelength of 1342 nm. An equivalent modified region can be formed on the semiconductor wafer by the laser light in the wavelength region. Therefore, the types of laser light that can be used are increased, and the versatility is excellent.

The dicing tape-integrated semiconductor back-adhesion film of the present invention has a ratio [total light transmittance C (%) / linear transmittance D (%)] of the total light transmittance C of infrared rays having a wavelength of 1342 nm and the linear transmittance D of 1. It is preferably 0.0 to 5.0. Since the semiconductor back-adhesion film integrated with the dicing tape of the present invention having such a configuration tends to selectively transmit laser light, the laser light is irradiated from the dicing tape side after being attached to the semiconductor back-adhesion film. Therefore, it becomes easier to form a modified region on the semiconductor wafer. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the semiconductor back-adhesion film, and the semiconductor wafer is individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Will be easier.

The dicing tape-integrated semiconductor back-adhesion film of the present invention preferably has a haze value of 80% or less. Since the semiconductor back-adhesion film integrated with the dicing tape of the present invention having such a configuration does not easily scatter the laser light, it is efficiently irradiated with the laser light from the dicing tape side after being attached to the semiconductor back-adhesion film. It is possible to form a modified region on a semiconductor wafer. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the semiconductor back-adhesion film, and the semiconductor wafer is individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Will be easier.

In the dicing tape-integrated semiconductor back-adhesion film of the present invention, it is preferable that both the arithmetic average surface roughness of the back surface of the substrate and the surface of the semiconductor back-adhesion film are 100 nm or less. Since the semiconductor back-adhesion film integrated with the dicing tape of the present invention having such a configuration does not easily scatter the laser light, it is efficiently irradiated with the laser light from the dicing tape side after being attached to the semiconductor back-adhesion film. It is possible to form a modified region on a semiconductor wafer. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the semiconductor back-adhesion film, and the semiconductor wafer is individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Will be easier.

By using the dicing tape-integrated semiconductor back-adhesion film of the present invention, it is possible to individualize a semiconductor wafer without causing chipping of the semiconductor chip and peeling from the back-adhesion film.

It is a schematic diagram (front sectional view) which shows one Embodiment of the semiconductor back contact film integrated with a dicing tape of this invention. It is the schematic (front sectional view) which shows the other embodiment of the semiconductor back contact film integrated with a dicing tape of this invention. It is a schematic diagram (front sectional view) which shows one Embodiment of a wafer thinning process. It is a schematic diagram (front sectional view) which shows one Embodiment of the pasting process. It is a schematic diagram (front sectional view) which shows one Embodiment of the individualization process. It is a schematic diagram (front sectional view) which shows one Embodiment of a pickup process. It is a schematic diagram (front sectional view) which shows one Embodiment of a flip chip mounting process.

[Dicing tape integrated semiconductor back contact film]
The dicing tape-integrated semiconductor back-adhesive film of the present invention (sometimes referred to simply as "dicing tape-integrated back-adhesive film") includes a dicing tape having a laminated structure including a base material and an adhesive layer, and the dicing tape. The semiconductor back-adhesive film (which may be simply referred to as “back-adhesive film”) that is removably adhered to the pressure-sensitive adhesive layer in the above is provided. In the present specification, the "front surface" of the semiconductor (work) is the surface on which the bumps for mounting the flip chips of the work are formed, and the "back surface" is the opposite side of the surface, that is, the bumps are formed. It shall refer to the side that has not been used. The "back contact film" refers to a film used in close contact with the back surface of a semiconductor, and includes a film for forming a protective film on the back surface (so-called back surface) of a semiconductor chip (semiconductor back surface protective film).

The back contact film has a linear transmittance of infrared rays having a wavelength of 1000 nm (sometimes referred to as “linear transmittance A”) of 20% or more, preferably 28% or more, more preferably 50% or more, still more preferably 60. % Or more. When the linear transmittance A is 20% or more, the back-adhesion film has a high transmittance of laser light including infrared rays having a wavelength of around 1000 nm for forming a modified region, and therefore, after being attached to the back-adhesion film. It is possible to form a modified region on a semiconductor wafer by laser light. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the back-adhesion film, and the semiconductor wafer can be individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Is possible. In the present specification, the linear transmittance of the back contact film and the dicing tape integrated back contact film can be measured by using a known spectrophotometer.

The back contact film has a linear transmittance of infrared rays having a wavelength of 1342 nm (sometimes referred to as “linear transmittance B”) of 20% or more, preferably 40% or more, more preferably 50% or more, still more preferably 70. % Or more. When the linear transmittance B is 20% or more, the back-adhesion film has a high transmittance of laser light including infrared rays having a wavelength of 1342 nm for forming a modified region. It is possible to form a modified region on the wafer by laser light. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the back-adhesion film, and the semiconductor wafer can be individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Is possible.

The ratio [straight transmittance A (%) / linear transmittance B (%)] of the linear transmittance A and the linear transmittance B of the back contact film is 0.3 to 1.0, preferably 0. It is .5 to 1.0, more preferably 0.55 to 1.0, and even more preferably 0.75 to 1.0. When the above ratio is within the above range, infrared rays having both wavelengths of 1000 nm and 1342 nm can be transmitted more evenly, so that equivalent modified regions can be formed on the semiconductor wafer by laser light of both wavelengths. .. Therefore, the types of laser light that can be used increase, and the versatility is excellent.

The linear transmittance of infrared rays with a wavelength of 1064 nm (straight transmittance A ₁ ), the linear transmittance of infrared rays with a wavelength of 1080 nm (linear transmittance A ₂ ), and the linear transmittance of infrared rays with a wavelength of 1099 nm (linear transmittance) of the back contact film. The ratio of A ₃ ) to the linear transmittance B (that is, [straight transmittance A ₁ (%) / linear transmittance B (%)], [straight transmittance A ₂ (%) / linear transmittance B (that is,). %)] And [all of linear transmittance A ₃ (%) / linear transmittance B (%)] are preferably 0.3 to 1.0, and more preferably 0.5 to 1. It is 0, more preferably 0.7 to 1.0. In particular, the ratio of the linear transmittance (linear transmittance A') of infrared rays in the wavelength range of 1000 to 1342 nm and the linear transmittance B [linear transmittance A'(%) / linear transmittance B (%)] is within the above range. Is preferable. That is, it is particularly preferable that the ratio of all the linear transmittances A'of infrared rays in the wavelength range of 1000 to 1342 nm to the linear transmittance B is within the above range. When the above ratio is within the above range, all of the wavelengths of 1064 nm, 1080 nm, 1099 nm, and 1342 nm (particularly, the region having a wavelength of 1000 to 1342 nm) possessed by the plurality of types of laser light capable of forming a modified region on the semiconductor wafer. Since the infrared rays of (all of them) can be transmitted to the same extent as the infrared rays having a wavelength of 1342 nm, an equivalent modified region can be formed on the semiconductor wafer by the laser light in the wavelength region. Therefore, the types of laser light that can be used are increased, and the versatility is excellent.

An embodiment of the dicing tape integrated back contact film of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing an embodiment of a dicing tape integrated back contact film. As shown in FIG. 1, the dicing tape integrated back contact film 1 includes a dicing tape 10 and a back contact film 20 laminated on the pressure-sensitive adhesive layer 12 of the dicing tape 10. In the back contact film 1 integrated with the dicing tape shown in FIG. 1, the back contact film 20 has a single layer structure of the adhesive layer 21. The dicing tape-integrated back-adhesion film 1 is used in the individualization step in the process of obtaining a semiconductor chip with a back-adhesion film in the manufacture of a semiconductor device. The dicing tape 10 in the dicing tape integrated back contact film 1 has a laminated structure including a base material 11 and an adhesive layer 12. The back contact film 20 has a size similar to that of the work so as to correspond to the semiconductor wafer which is the work to be bonded.

(Adhesive layer)
The back contact film includes at least an adhesive layer having a surface to be attached to the back surface of the work (for example, 21a in FIG. 1). The adhesive layer may have thermosetting properties so that it can be attached to the back surface of the work and then adhered to and protected from the back surface of the work by thermosetting. When the adhesive layer is non-thermosetting and does not have thermosetting property, the adhesive layer adheres to and protects the back surface of the work due to adhesion (wetting property) at the interface due to pressure sensitivity or the like or chemical bonding. It is possible. The adhesive layer may have a single-layer structure or a multi-layer structure.

The adhesive composition (resin composition) forming the adhesive layer and the adhesive layer preferably contains a thermoplastic resin. When the adhesive layer has thermosetting property, the adhesive layer and the adhesive composition forming the adhesive layer may contain a thermosetting resin and a thermoplastic resin, and may react with the curing agent. It may contain a thermosetting resin having a thermosetting functional group capable of forming a bond. When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, the adhesive composition does not need to contain a thermosetting resin (epoxy resin or the like).

The thermoplastic resin in the adhesive layer has, for example, a binder function. Examples of the thermoplastic resin include acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutadiene resin. , Polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as polyethylene terephthalate (PET) and polybutylene terephthalate (PBT), polyamideimide resin , Fluororesin and the like. As the thermoplastic resin, only one kind may be used, or two or more kinds may be used. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint of having few ionic impurities and high heat resistance.

The acrylic resin is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule) as a structural unit of the polymer. The acrylic resin is preferably a polymer containing the largest amount of structural units derived from (meth) acrylic acid ester in terms of mass ratio. As the acrylic resin, only one kind may be used, or two or more kinds may be used. Further, in the present specification, "(meth) acrylic" means "acrylic" and / or "methacrylic" (either one or both of "acrylic" and "methacrylic"), and the same applies to the others. ..

Examples of the (meth) acrylic acid ester include hydrocarbon group-containing (meth) acrylic acid esters that may have an alkoxy group. Examples of the hydrocarbon group-containing (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, and pentyl ester of (meth) acrylic acid. Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (lauryl ester), tridecyl ester, tetradecyl ester , Hexadecyl ester, octadecyl ester, ecosil ester and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl ester and benzyl ester of (meth) acrylic acid. Examples of the hydrocarbon group-containing (meth) acrylic acid ester having an alkoxy group include those in which one or more hydrogen atoms in the hydrocarbon group in the above-mentioned hydrocarbon group-containing (meth) acrylic acid ester are replaced with an alkoxy group. For example, 2-methoxymethyl ester, 2-methoxyethyl ester, 2-methoxybutyl ester and the like of (meth) acrylic acid can be mentioned. As the hydrocarbon group-containing (meth) acrylic acid ester which may have the above-mentioned alkoxy group, only one kind may be used, or two or more kinds may be used.

The acrylic resin is derived from another monomer component that can be copolymerized with a hydrocarbon group-containing (meth) acrylic acid ester that may have an alkoxy group for the purpose of modifying cohesive force, heat resistance, and the like. It may include units. Examples of the other monomer components include functional groups such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Examples include monomers. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride, itaconic anhydride and the like. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and 6-hydroxyhexyl (meth) acrylate. Examples thereof include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methyl propane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, and (meth). ) Acryloyloxynaphthalene sulfonic acid and the like can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate and the like. As the above-mentioned other monomer components, only one kind may be used, or two or more kinds may be used.

The acrylic resin that can be contained in the adhesive layer is appropriately selected from butyl acrylate, ethyl acrylate, acrylonitrile, and acrylic acid from the viewpoint that the adhesive layer has both adhesiveness to the work and good splittability at the time of expansion. It is preferably a copolymer of the selected monomer.

When the adhesive layer contains a thermosetting resin together with a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting resin. Examples include polyimide resin. As the thermosetting resin, only one kind may be used, or two or more kinds may be used. Epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like that can cause corrosion of the semiconductor chip tends to be small. Further, as the curing agent for the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, and biphenyl type. Epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin such as orthocresol novolac type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylol ethane type epoxy resin, etc. Examples include polyfunctional epoxy resins. As the epoxy resin, only one kind may be used, or two or more kinds may be used. Among them, phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetrapheni are excellent because they are highly reactive with phenol resin as a curing agent and have excellent heat resistance. Roll ethane type epoxy resin is preferable.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolak-type phenol resins such as phenol novolac resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. Further, examples of the phenol resin include polyoxystyrene such as resol type phenol resin and polyparaoxystyrene. As the above-mentioned phenol resin, only one kind may be used, or two or more kinds may be used.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer, the phenol resin preferably has a hydroxyl group in the phenol resin per equivalent amount of epoxy groups in the epoxy resin component. It is contained in an amount of 5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

When the adhesive layer contains a thermosetting resin, the content ratio of the thermosetting resin is 5 to 60% by mass with respect to the total mass of the adhesive layer from the viewpoint of appropriately curing the adhesive layer. It is preferable, more preferably 10 to 50% by mass.

When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in this thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth) acrylic acid ester as the structural unit having the largest mass ratio. The hydrocarbon group-containing (meth) acrylic acid ester is exemplified as, for example, a hydrocarbon group-containing (meth) acrylic acid ester that forms an acrylic resin as a thermoplastic resin that can be contained in the above-mentioned adhesive layer. Can be mentioned. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxy group-containing acrylic resin are particularly preferable. Further, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin, and the curing agent is exemplified as, for example, a cross-linking agent that can be contained in a radiation-curable pressure-sensitive adhesive for forming a pressure-sensitive adhesive layer, which will be described later. Things can be mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol-based compound as the curing agent, and for example, the above-mentioned various phenol resins can be used.

The adhesive layer preferably contains a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is included, the curing reaction of the resin component can be sufficiently promoted and the curing reaction rate can be increased when the adhesive layer is cured. Examples of the thermosetting catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogen-borane-based compounds. Examples of the imidazole compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole and 2-phenyl-. 4-Methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole Rium trimellitate, 2,4-diamino-6- [2'-methylimidazole- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazole- (1') ')]-Ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, etc. Can be mentioned. Examples of the triphenylphosphine compound include triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltrilphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium and methyltriphenyl. Examples thereof include phosphonium chloride, methoxymethyltriphenylphosphonium, benzyltriphenylphosphonium chloride and the like. The triphenylphosphine-based compound shall also include a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such a compound include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, triphenylphosphine triphenylborane and the like. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihalogen borane compound include trichloroborane and the like. The thermosetting catalyst may contain only one type, or may contain two or more types.

The adhesive layer may contain a filler. By containing the filler, it is easy to adjust the physical properties such as the elastic modulus of the adhesive layer, the yield point strength, and the elongation at break. Examples of the filler include an inorganic filler and an organic filler. Examples of the constituent materials of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and nitrided material. Examples thereof include silicon, boron nitride, crystalline silica, and amorphous silica. Examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon and graphite. Examples of the constituent material of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. The filler may contain only one kind, or may contain two or more kinds.

The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. The average particle size of the filler is preferably 10 to 1000 nm, more preferably 20 to 700 nm, and more preferably 30 to 500 nm. That is, the adhesive layer preferably contains a nanofiller. When a nanofiller having such a particle size is contained as a filler, the back adhesion film to be fragmented is more excellent in splittability. Further, when the average particle size is small, the linear transmittance of infrared rays in the region of wavelength 1000 to 1342 nm tends to be high, and the above-mentioned [linear transmittance A'/ linear transmittance B] tends to be large. The average particle size of the filler can be obtained, for example, by using a luminous intensity type particle size distribution meter (trade name "LA-910", manufactured by HORIBA, Ltd.). When the adhesive layer contains a filler, the content ratio of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and more preferably 20% by mass or more. The content ratio is preferably 60% by mass or less, more preferably 50% by mass or less, and more preferably 45% by mass or less. If the content ratio is small, the linear transmittance tends to improve.

The adhesive layer may contain a colorant. Examples of the colorant in the adhesive layer include those exemplified as the colorant that can be contained in the laser mark layer described later. From the viewpoint of ensuring high contrast between the engraved portion by the laser marking on the laser mark layer side of the back contact film and the other portion and realizing good visibility of the engraved information, the above-mentioned colorant is colored black. It is preferably an agent. As the colorant, only one kind may be used, or two or more kinds may be used. Further, from the viewpoint of realizing the above-mentioned good visibility of the marking information by laser marking, the content ratio of the colorant in the adhesive layer is preferably 0.5% by mass or more, more preferably 1% by mass or more, still more preferably. Is 2% by mass or more. The content ratio is preferably 10% by mass or less, more preferably 8% by mass or less, still more preferably 5% by mass or less.

The adhesive layer may contain other components as needed. Examples of the other components include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and composite metal hydroxides, phosphazenic compounds, antimony trioxide, and five. Examples thereof include antimony oxide and brominated epoxy resin. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydroxide-containing antimony (for example, "IXE-300" manufactured by Toa Synthetic Co., Ltd.), and zirconium phosphate having a specific structure (for example, manufactured by Toa Synthetic Co., Ltd.). "IXE-100"), magnesium silicate (for example, "Kyoward 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (for example, "Kyoward 700" manufactured by Kyowa Chemical Industry Co., Ltd.) and the like. A compound capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such a compound include a triazole-based compound, a tetrazole-based compound, and a bipyridyl-based compound. Of these, a triazole-based compound is preferable from the viewpoint of the stability of the complex formed with the metal ion. Examples of such triazole-based compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-. 5-Methylphenyl) Benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-t-butyl-5-methylphenyl) )-5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2) -Benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2', 3'-hydroxypropyl) benzotriazole, 1- (1,2-Dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazole-1-yl) methyl} phenol , 2- (2-Hydroxy-5-t-butylphenyl) -2H-benzotriazole, 3- (2H-benzotriazole-2-yl) -5- (1,1-dimethylethyl) -4-hydroxy, octyl -3- [3-t-Butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole-2-yl) phenyl] propionate, 2-ethylhexyl-3- [3-t-butyl-4-hydroxy -5- (5-Chloro-2H-benzotriazole-2-yl) phenyl] propionate, 2- (2H-benzotriazole-2-yl) -6- (1-methyl-1-phenylethyl) -4- ( 1,1,3,3-Tetramethylbutyl) phenol, 2- (2H-benzotriazole-2-yl) -4-t-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-Hydroxy-5-t-octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1 , 1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazole-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol ], 2- [2-Hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, methyl-3- [3- (2H-benzotriazole-2-yl) -5-yl t-butyl-4-hydroxyphenyl] propionate and the like can be mentioned. Further, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, and a polyphenol compound can also be used as an ion trapping agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralphin, tannin, gallate, methyl gallate, and pyrogallol. As the above other components, only one kind may be used, or two or more kinds may be used.

The tensile storage elastic modulus (before curing) of the adhesive layer at 23 ° C. is not particularly limited, but is preferably 0.5 GPa or more, more preferably 0.75 GPa or more, and further preferably 1 GPa or more. When the tensile storage elastic modulus is 0.5 GPa or more, it can be prevented from adhering to the transport carrier tape. The upper limit of the tensile storage elastic modulus at 23 ° C. is, for example, 50 GPa. The tensile storage elastic modulus can be adjusted by the type and content of the resin component, the type and content of the filler, and the like.

The thickness of the adhesive layer is, for example, 2 to 200 μm, preferably 4 to 160 μm, more preferably 6 to 100 μm, still more preferably 8 to 80 μm.

The back contact film may have a single-layer structure composed of the above-mentioned adhesive layer, or may have a multi-layer structure. The back-adhesive film having a multi-layer structure has, for example, a laminated structure including the above-mentioned adhesive layer and a laser mark layer capable of imparting engraving information by laser marking. The back contact film having such a multilayer structure has a laminated structure in which the adhesive layer is thermoset by heat treatment at 120 ° C. for 2 hours, while the laser mark layer is not substantially thermoset. A thermosetting-less laminated structure in which both the adhesive layer and the laser mark layer are not substantially thermoset by heat treatment at 120 ° C. for 2 hours, while the adhesive layer is cured by irradiation, the above. The laser mark layer can have a thermosetting-less laminated structure or the like, which is substantially non-thermosetting. The layer of the back contact film that is not substantially thermoset by heat treatment at 120 ° C. for 2 hours includes a thermosetting layer that has already been cured.

FIG. 2 shows an embodiment of the dicing tape-integrated back-adhesion film of the present invention in the case where the back-adhesion film has a multilayer structure including an adhesive layer and a laser mark layer. In the dicing tape integrated back contact film 1 shown in FIG. 2, the back contact film 20 has a multilayer structure including an adhesive layer 21 and a laser mark layer 22, and the laser mark layer 22 is an adhesive layer 12 in the dicing tape 10. It is in close contact with the peelable. When the adhesive layer 21 and the laser mark layer 22 are in the positional relationship shown in FIG. 2, the back surface adhesion film 20 can be attached to the back surface of the work and heat-cured as necessary before use.

(Laser mark layer)
When the back contact film has a multilayer structure having an adhesive layer and a laser mark layer, the surface of the laser mark layer is laser-marked in the manufacturing process of the semiconductor device. In the dicing tape integrated back contact film, it is preferable that the laser mark layer is located on the dicing tape side in the back contact film and is in close contact with the dicing tape and its pressure-sensitive adhesive layer. Further, the laser mark layer and / or the adhesive layer may be a thermosetting layer having a thermosetting property, or may be a non-thermosetting layer having no thermosetting property. When the laser mark layer is non-thermosetting, the thermosetting component may be a thermosetting layer (thermosetting layer). The laser mark layer is formed by curing a thermosetting resin composition layer formed from the resin composition forming the laser mark layer.

The laser mark layer and the resin composition forming the laser mark layer preferably contain a thermoplastic resin. When the laser mark layer is a thermosetting layer (that is, a thermosetting layer or a thermosetting layer), the resin composition forming the laser mark layer or the laser mark layer is a thermosetting resin and a thermoplastic resin. And may be contained, or may contain a thermosetting resin having a thermosetting functional group that can react with a curing agent to form a bond.

The thermoplastic resin has a binder function in, for example, a laser mark layer, and examples of the thermoplastic resin include those exemplified as the thermoplastic resin that can be contained in the adhesive layer. As the thermoplastic resin, only one kind may be used, or two or more kinds may be used. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint of having few ionic impurities and high heat resistance.

The acrylic resin that can be contained in the laser mark layer and the resin composition that forms the laser mark layer is butyl acrylate or acrylic acid from the viewpoint of achieving both visibility of engraved information by laser marking and good splittability at the time of expansion. It is preferably a copolymer of a monomer appropriately selected from ethyl, acrylonitrile, and acrylic acid.

When the thermosetting resin is contained together with the thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. Be done. As the thermosetting resin, only one kind may be used, or two or more kinds may be used. Epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like that can cause corrosion of the semiconductor chip tends to be small. Further, as the curing agent for the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include those exemplified as the epoxy resin that can be contained in the above-mentioned adhesive layer. As the epoxy resin, only one kind may be used, or two or more kinds may be used.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include those exemplified as the phenol resin that can be contained in the above-mentioned adhesive layer. As the above-mentioned phenol resin, only one kind may be used, or two or more kinds may be used.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the laser mark layer and the resin composition forming the laser mark layer, the phenol resin is said to be the same per equivalent amount of epoxy groups in the epoxy resin component. The hydroxyl group in the phenol resin is preferably contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

When the laser mark layer and the resin composition forming the laser mark layer contain a thermosetting resin, the content ratio of the thermosetting resin is the total mass of the laser mark layer or the resin composition forming the laser mark layer. On the other hand, it is preferably 5 to 60% by mass, more preferably 10 to 50% by mass.

When the laser mark layer and the resin composition forming the laser mark layer contain a thermoplastic resin having a thermosetting functional group, the thermoplastic resin includes the thermosetting functional group-containing acrylic that can be contained in the above-mentioned adhesive layer. Examples thereof include those exemplified as a resin. Further, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin, and the curing agent is exemplified as, for example, a cross-linking agent that can be contained in a radiation-curable pressure-sensitive adhesive for forming a pressure-sensitive adhesive layer, which will be described later. Can be mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol-based compound as a curing agent, and for example, the above-mentioned various phenol resins can be used.

The laser mark layer and the resin composition forming the laser mark layer preferably contain a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is included, the curing reaction of the resin component can be sufficiently advanced and the curing reaction rate can be increased when the resin composition is cured. Examples of the thermosetting catalyst include those exemplified as the thermosetting catalyst that can be contained in the above-mentioned adhesive layer. The thermosetting catalyst may contain only one type, or may contain two or more types.

The laser mark layer and the resin composition forming the laser mark layer may contain a filler. By containing the filler, it is easy to adjust the physical properties such as the elastic modulus of the laser mark layer, the yield point strength, and the elongation at break. Examples of the filler include those exemplified as the filler that can be contained in the above-mentioned adhesive layer. The filler may contain only one kind, or may contain two or more kinds.

The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. The average particle size of the filler is preferably 10 to 1000 nm, more preferably 20 to 700 nm, and more preferably 30 to 500 nm. That is, the laser mark layer and the resin composition forming the laser mark layer preferably contain nanofillers. When a nanofiller having such a particle size is contained as a filler, the back-adhesive film to be fragmented is more excellent in splitting property and splitting property. Further, when the average particle size is small, the linear transmittance of infrared rays in the region of wavelength 1000 to 1342 nm tends to be high, and the above-mentioned [linear transmittance A'/ linear transmittance B] tends to be large. When the laser mark layer or the resin composition contains a filler, the content ratio of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and more preferably 20% by mass or more. The content ratio is preferably 60% by mass or less, more preferably 50% by mass or less, and more preferably 45% by mass or less. If the content ratio is small, the linear transmittance tends to improve.

The laser mark layer and the resin composition forming the laser mark layer may contain a colorant. When a colorant is contained, excellent marking properties and appearance can be exhibited, and various information such as character information and graphic information can be added by laser marking. Further, by appropriately selecting the color of the colorant, the information (character information, graphic information, etc.) given by the marking can be made excellent in visibility. Furthermore, by selecting a colorant, it is possible to color-code each product.

The colorant may be a pigment or a dye. Examples of the colorant include a black colorant, a cyan colorant, a magenta colorant, a yellow colorant and the like. A black colorant is preferable from the viewpoint that information is engraved on the laser mark layer by laser marking and the information is more visible. The colorant may contain only one kind or two or more kinds.

Examples of the black colorant include azo pigments such as carbon black, graphite, copper oxide, manganese dioxide, and azomethine azo black, aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite, and magnetite. Examples thereof include chromium oxide, iron oxide, molybdenum disulfide, composite oxide-based black dye, anthraquinone-based organic black dye, and azo-based organic black dye. Examples of carbon black include furnace black, channel black, acetylene black, thermal black, lamp black and the like. Examples of the black colorant include C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70; C.I. I. Direct Black 17, 19; 22, 32, 38, 51, 71; C.I. I. Acid Black 1, Same 2, Same 24, Same 26, Same 31, Same 48, Same 52, Same 107, Same 109, Same 110, Same 119, Same 154; C.I. I. Dispers Black 1, 3, 10, 24; C.I. I. Pigment Black 1, 7 and the like can also be mentioned. Further, examples thereof include metal oxides containing metal elements such as Co, Cr, Cu, Mn, Ru, Fe, Ni, Sn, Ti, Ag and Al, and black pigments such as metal nitrogen substances.

Examples of the cyanide colorant include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; C.I. I. Acid Blue 6, 45; C.I. I. Pigment Blue 1, Same 2, Same 3, Same 15, Same 15: 1, Same 15: 2, Same 15: 3, Same 15: 4, Same 15: 5, Same 15: 6, Same 16, Same 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; C.I. I. Bat Blue 4; 60, C.I. I. Pigment Green 7 and the like.

Examples of the magenta colorant include C.I. I. Solvent Red 1, Same 3, Same 8, Same 23, Same 24, Same 25, Same 27, Same 30, Same 49, Same 52, Same 58, Same 63, Same 81, Same 82, Same 83, Same 84, Same 100, 109, 111, 121, 122; C.I. I. Disperse thread 9; C.I. I. Solvent Violet 8, 13, 14, 21, 21, 27; C.I. I. Disperse Violet 1; C.I. I. Basic Red 1, Same 2, Same 9, Same 12, Same 13, Same 14, Same 15, Same 17, Same 18, Same 22, Same 23, Same 24, Same 27, Same 29, Same 32, Same 34, Same 35, 36, 37, 38, 39, 40; C.I. I. Examples include Basic Violet 1, 3, 7, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like. Further, as a magenta colorant, for example, C.I. I. Pigment Red 1, Same 2, Same 3, Same 4, Same 5, Same 6, Same 7, Same 8, Same 9, Same 10, Same 11, Same 12, Same 13, Same 14, Same 15, Same 16 17, 18, 19, 21, 21, 22, 23, 30, 31, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, same. 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146, 147, 149, 150, 151, 163, 166, 168, 170, 171 and 172, 175, 176, 177, 178, 179, 184, 185. 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; C.I. I. Pigment Violet 3, 9, 19, 19, 23, 31, 32, 33, 36, 38, 43, 50; C.I. I. Examples include Bat Red 1, 2, 10, 13, 13, 15, 23, 29, and 35.

Examples of the yellow colorant include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162; C.I. I. Pigment Orange 31, 43; C.I. I. Pigment Yellow 1, 2, 3, 4, 4, 5, 6, 7, 10, 10, 11, 12, 13, 14, 14, 15, 16, 17, 23, 23, 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75, 81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139. 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; C.I. I. Bat Yellow 1, 3, 20, 20 and the like can be mentioned.

Examples of other pigments include indium tin oxide, antimony tin oxide, zinc oxide, lead white, lithopon, titanium oxide, chromium oxide, iron oxide, aluminum oxide, precipitated barium sulfate, barite powder, lead tan, and oxidation. Iron Red, Chrome Yellow, Zinc Yellow (1 Zinc Yellow, 2 Zinc Yellow), Ultramarine Blue, Prussian Blue (Prussian Iron Potassium), Zircon Gray, Placeozim Yellow, Chrome Titanium Yellow, Chrome Green, Peacock, Victoria Examples include green, prussian blue, vanadium zinc oxide blue, chrome tin pink, ceramic red, salmon pink, titanium black, tungsten compound, and metal boroides.

The content ratio of the colorant is, for example, the total mass of the laser mark layer or the resin composition forming the laser mark layer from the viewpoint of realizing high visibility of the information imprinted on the laser mark layer by laser marking. It is 0.5% by mass or more, preferably 1% by mass or more, and more preferably 2% by mass or more. The content ratio is, for example, 10% by mass or less, preferably 8% by mass or less, and more preferably 5% by mass or less.

The laser mark layer and the resin composition forming the laser mark layer may contain other components, if necessary. Examples of the other components include flame retardants, silane coupling agents, ion trapping agents, and the like, which are exemplified as other components that can be contained in the above-mentioned adhesive layer. As the above other components, only one kind may be used, or two or more kinds may be used.

The tensile storage elastic modulus (after curing) of the laser mark layer at 23 ° C. is not particularly limited, but is preferably 0.5 GPa or more, more preferably 0.75 GPa or more, and further preferably 1 GPa or more. When the tensile storage elastic modulus is 0.5 GPa or more, it can be prevented from adhering to the transport carrier tape. In addition, the back surface of the work can be protected more firmly after heat curing. The upper limit of the tensile storage elastic modulus at 23 ° C. is, for example, 20 GPa. The tensile storage elastic modulus can be adjusted by the type and content of the resin component, the type and content of the filler, and the like.

When the back contact film has a multilayer structure having an adhesive layer and a laser mark layer, the ratio of the thickness of the laser mark layer to the thickness of the adhesive layer is preferably 1 or more, more preferably 1.5 or more. More preferably, it is 2 or more. The above ratio is, for example, 8 or less.

When the laser mark layer is provided, the thickness of the laser mark layer is, for example, 2 to 180 μm, preferably 4 to 160 μm.

The thickness of the back contact film is, for example, 2 to 200 μm, preferably 5 to 50 μm, more preferably 7 to 45 μm, still more preferably 10 to 40 μm. When the thickness is 2 μm or more, the back surface of the work can be protected more firmly. When the thickness is 200 μm or less, the work after the back contact can be made thinner.

The content ratio of the colorant in the back contact film is not particularly limited, but is preferably 0.5% by mass or more, more preferably 1% by mass or more, still more preferably 2% by mass or more. The content ratio is preferably 10% by mass or less, more preferably 8% by mass or less, still more preferably 5% by mass or less. When the content ratio is 10% by mass or less, a back-adhesion film having both linear transmittances of infrared rays having a wavelength of 1000 nm and 1342 nm of 20% or more can be easily produced.

The arithmetic average surface roughness of the back contact film surface (the side opposite to the side in close contact with the dicing tape, that is, the surface on which the semiconductor wafer is attached) is preferably 100 nm or less, more preferably 80 nm or less, and further. It is preferably 60 nm or less. When the arithmetic average surface roughness of the back surface adhesion film surface is 100 nm or less, the laser light emitted to form the modified region is less likely to be scattered. Therefore, after the semiconductor wafer is attached to the back surface adhesion film, the dicing tape side is used. It is possible to efficiently form a modified region on a semiconductor wafer by irradiating the semiconductor wafer with laser light from the surface. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the back-adhesion film, and the semiconductor wafer can be individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Will be easier.

The peeling force (peeling angle 180 °, peeling speed 300 mm / min, after curing) of the back-adhesive film against the pressure-sensitive adhesive layer is not particularly limited, but is preferably 10 N / 20 mm or less, more preferably 5 N / 20 mm or less. be. When the peeling force is 10 N / 20 mm or less, the tip can be easily picked up from the dicing tape at the time of picking up. The peeling force is preferably 0.02 N / 20 mm or more, more preferably 0.05 N / 20 mm or more. When the peeling force is 0.02 N / 20 mm or more, it becomes difficult for the back-adhesive film after curing to be peeled from the dicing tape at the time of individualization.

(Base material)
The base material in the dicing tape is an element that functions as a support in the dicing tape and the back contact film integrated with the dicing tape. Examples of the base material include a plastic base material (particularly a plastic film). The base material may be a single layer or a laminated body of the same type or different types of base materials.

Examples of the resin constituting the plastic base material include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, and homopolyprolene. , Polybutene, Polymethylpentene, Ethylene-vinyl acetate copolymer (EVA), Ionomer, Ethylene- (meth) acrylic acid copolymer, Ethylene- (meth) acrylic acid ester (random, alternating) copolymer, Ethylene- Polyolefin resins such as butene copolymers and ethylene-hexene copolymers; polyurethane; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate and polybutylene terephthalate (PBT); polycarbonates; polyimides; polyether ether ketones; polyetherimides Examples thereof include polyamides such as aramid and total aromatic polyamides; polyphenyl sulfides; fluororesins; polyvinyl chlorides; polyvinylidene chlorides; cellulose resins; silicone resins and the like. Maintaining the chip separation distance by using dicing tape or partial heat shrinkage of the base material in the expanding process for ensuring good heat shrinkage in the substrate and increasing the separation distance between the semiconductor chips after fragmentation. From the viewpoint of easy easiness, the base material preferably contains an ethylene-vinyl acetate copolymer or polyvinyl chloride as a main component. The main component of the base material is a component that occupies the largest mass ratio among the constituent components. As the above resin, only one kind may be used, or two or more kinds may be used. When the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer as described later, it is preferable that the base material has radiation permeability.

When the base material is a plastic film, the plastic film may be non-oriented or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film is heat shrinkable in at least one direction. Having heat shrinkage makes it possible to heat-shrink the outer peripheral portion of the semiconductor wafer of the dicing tape, so that the distance between the semiconductor chips with the back contact film that has been separated from each other is widened. Since it can be fixed, the semiconductor chip can be easily picked up. In order for the base material and the dicing tape to have isotropic heat shrinkage, the base material is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching the unstretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The base material and the dicing tape preferably have a heat shrinkage rate of 1% or more, more preferably 3% or more, still more preferably 3% or more in a heat treatment test conducted under the conditions of a heating temperature of 100 ° C. and a heating time treatment of 60 seconds. It is 5% or more, particularly preferably 7% or more. The heat shrinkage rate is preferably a heat shrinkage rate in at least one direction in the MD direction and the TD direction.

The surface of the base material on the pressure-sensitive adhesive layer side is, for example, corona discharge treatment, plasma treatment, sand mat processing treatment, ozone exposure treatment, flame exposure treatment, high piezoelectric impact, for the purpose of improving adhesion and retention with the pressure-sensitive adhesive layer. Physical treatment such as exposure treatment and ionizing radiation treatment; chemical treatment such as chromium acid treatment; surface treatment such as easy adhesion treatment with a coating agent (undercoating agent) may be performed. Further, in order to impart antistatic ability, a conductive vapor-filmed layer containing a metal, an alloy, an oxide thereof, or the like may be provided on the surface of the substrate. It is preferable that the surface treatment for enhancing the adhesion is applied to the entire surface of the base material on the pressure-sensitive adhesive layer side.

The thickness of the base material is preferably 40 μm or more, more preferably 50 μm or more, still more preferably 50 μm or more, from the viewpoint of ensuring the strength for the base material to function as a support in the dicing tape and the dicing tape integrated back contact film. Is 55 μm or more, particularly preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape and the dicing tape integrated back contact film, the thickness of the base material is preferably 200 μm or less, more preferably 180 μm or less, still more preferably 150 μm or less. be.

The arithmetic average surface roughness of the back surface of the substrate (the surface opposite to the side on which the pressure-sensitive adhesive layer is formed) is preferably 100 nm or less, more preferably 90 nm or less, and further preferably 80 nm or less. When the arithmetic average surface roughness of the surface of the semiconductor back-adhesion film is 100 nm or less, the laser light emitted to form the modified region is less likely to be scattered. Therefore, after the semiconductor wafer is attached to the back-adhesion film, the dicing tape is used. Irradiation of laser light from the side makes it possible to efficiently form a modified region on the semiconductor wafer. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the back-adhesion film, and the semiconductor wafer can be individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Will be easier.

(Adhesive layer)
The adhesive layer in the dying tape is an adhesive layer (adhesive layer that can reduce the adhesive force) that can intentionally reduce the adhesive force by an external action in the process of using the back adhesive film integrated with the dying tape. It may be a pressure-sensitive adhesive layer (adhesive strength non-reduced type pressure-sensitive adhesive layer) in which the adhesive strength is hardly or not reduced by an external action in the process of using the back-adhesive film integrated with the dicing tape. It can be appropriately selected according to the method and conditions for individualizing the work to be individualized using the back-adhesive film integrated with the dicing tape. The pressure-sensitive adhesive layer may have a single-layer structure or a multi-layer structure.

When the pressure-sensitive adhesive layer is a pressure-reducable type pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer exhibits a relatively high adhesive strength and a relatively low adhesive strength in the manufacturing process and the usage process of the back-adhesive film integrated with a dicing tape. It is possible to use the state showing the force properly. For example, when the back contact film is attached to the adhesive layer of the dying tape in the manufacturing process of the back contact film integrated with the dying tape, or when the back contact film integrated with the dying tape is used in the individualization process, the adhesive layer is used. It is possible to suppress / prevent the back-adhesive film from floating from the adhesive layer by utilizing the state in which In the pick-up process for picking up the chip, the pick-up can be easily performed by reducing the adhesive force of the pressure-sensitive adhesive layer.

Examples of the pressure-sensitive adhesive that forms such a pressure-reducing type pressure-sensitive adhesive layer include a radiation-curable pressure-sensitive adhesive and a heat-foaming type pressure-sensitive adhesive. As the pressure-sensitive adhesive forming the pressure-reducing adhesive layer, one type of pressure-sensitive adhesive may be used, or two or more types of pressure-sensitive adhesive may be used.

As the radiation-curable pressure-sensitive adhesive, for example, a type of pressure-sensitive adhesive that cures by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used, and the type that cures by irradiation with ultraviolet rays can be used. A pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used.

The radiation-curable pressure-sensitive adhesive includes, for example, a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples include mold radiocurable adhesives.

The acrylic polymer is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule) as a structural unit of the polymer. The acrylic polymer is preferably a polymer containing the largest amount of structural units derived from (meth) acrylic acid ester in terms of mass ratio. As the acrylic polymer, only one kind may be used, or two or more kinds may be used.

Examples of the (meth) acrylic acid ester include hydrocarbon group-containing (meth) acrylic acid esters that may have an alkoxy group. Examples of the hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group include those exemplified as a structural unit of an acrylic resin which can be contained in the above-mentioned adhesive layer. As the hydrocarbon group-containing (meth) acrylic acid ester which may have the above-mentioned alkoxy group, only one kind may be used, or two or more kinds may be used. As the hydrocarbon group-containing (meth) acrylic acid ester which may have the alkoxy group, 2-ethylhexyl acrylate and lauryl acrylate are preferable. All monomer components for forming an acrylic polymer in order to appropriately develop basic properties such as adhesiveness due to a hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group in the pressure-sensitive adhesive layer. The proportion of the hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group in the above is preferably 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer is derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group for the purpose of modifying cohesive force, heat resistance and the like. It may include a structural unit to be used. Examples of the other monomer component include other monomer components exemplified as a constituent unit of the acrylic resin that can be contained in the adhesive layer described above. As the above-mentioned other monomer components, only one kind may be used, or two or more kinds may be used. All monomer components for forming an acrylic polymer in order to appropriately develop basic properties such as adhesiveness due to a hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group in the pressure-sensitive adhesive layer. The total ratio of the other monomer components in the above is preferably 60% by mass or less, more preferably 40% by mass or less.

The acrylic polymer may contain a structural unit derived from a polyfunctional monomer copolymerizable with a monomer component forming the acrylic polymer in order to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, and penta. Elythritol di (meth) acrylate, trimethylolpropantri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (eg, polyglycidyl (meth) acrylate), polyester Examples thereof include monomers having a (meth) acryloyl group and other reactive functional groups in the molecule such as (meth) acrylate and urethane (meth) acrylate. As the polyfunctional monomer, only one kind may be used, or two or more kinds may be used. All monomer components for forming an acrylic polymer in order to appropriately develop basic properties such as adhesiveness due to a hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group in the pressure-sensitive adhesive layer. The proportion of the polyfunctional monomer in the above is preferably 40% by mass or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. The mass average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3 million. When the mass average molecular weight is 100,000 or more, the amount of low molecular weight substances in the pressure-sensitive adhesive layer tends to be small, and contamination of the back-adhesive film, semiconductor wafer, or the like can be further suppressed.

The pressure-sensitive adhesive layer or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer may contain a cross-linking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked to further reduce low molecular weight substances in the pressure-sensitive adhesive layer. In addition, the mass average molecular weight of the acrylic polymer can be increased. Examples of the cross-linking agent include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol compounds and the like), aziridine compounds, melamine compounds and the like. When a cross-linking agent is used, the amount used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, based on 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol monohydroxypenta ( Examples thereof include meta) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and those having a molecular weight of about 100 to 30,000 are preferable. The content of the radiopolymerizable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive forming the pressure-sensitive adhesive layer is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass of the base polymer. It is about a mass part. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-Open No. 60-196956 may be used.

The radiation-curable pressure-sensitive adhesive is an intrinsic radiation-curing agent containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain or at the end of the polymer main chain in the polymer main chain. Sexual pressure-sensitive adhesives can also be mentioned. When such an intrinsically curable pressure-sensitive adhesive is used, it tends to be possible to suppress an unintended change in adhesive properties over time due to the movement of low molecular weight components in the formed pressure-sensitive adhesive layer.

As the base polymer contained in the internal radiation curable pressure-sensitive adhesive, an acrylic polymer is preferable. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer component having a first functional group is polymerized (copolymerized) to obtain an acrylic polymer. Later, a compound having a second functional group capable of reacting with the first functional group and a radiopolymerizable carbon-carbon double bond is added to an acrylic polymer while maintaining the radiopolymerizability of the carbon-carbon double bond. Examples thereof include a method of subjecting to a condensation reaction or an addition reaction.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, and a hydroxy group and an isocyanate group. Examples thereof include an isocyanate group and a hydroxy group. Among these, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easiness of reaction tracking. Above all, it is technically difficult to prepare a polymer having a highly reactive isocyanate group, and on the other hand, from the viewpoint of easy preparation and availability of an acrylic polymer having a hydroxy group, the above-mentioned first functional group is used. A combination in which the hydroxy group is used and the second functional group is an isocyanate group is preferable. Compounds having an isocyanate group and a radiopolymerizable carbon-carbon double bond, that is, a radiopolymerizable unsaturated functional group-containing isocyanate compound include, for example, methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl-. Examples thereof include α and α-dimethylbenzyl isocyanate. The acrylic polymer having a hydroxy group contains the above-mentioned hydroxy group-containing monomer and structural units derived from ether compounds such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glucol monovinyl ether. Can be mentioned.

The radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketor compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, and thioxanthone compounds. Examples thereof include camphorquinone, halogenated ketone, acylphosphinoxide, acylphosphonate and the like. Examples of the α-ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxy. Examples thereof include propiophenone and 1-hydroxycyclohexylphenyl ketone. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -phenyl] -2. -Molholinopropane-1 and the like can be mentioned. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether and the like. Examples of the ketal-based compound include benzyldimethyl ketal and the like. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride and the like. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone compound include benzophenone, benzoylbenzoic acid, 3,3'-dimethyl-4-methoxybenzophenone and the like. Examples of the thioxanthone-based compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Examples include thioxanthone. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

The heat-foaming pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands when heated. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium boron hydride, azides and the like. Examples of the organic foaming agent include salt fluoride alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarboxylicamide and barium azodicarboxylate; paratoluene. Hydrazine compounds such as sulfonyl hydrazide, diphenyl sulfone-3,3'-disulfonyl hydrazide, 4,4'-oxybis (benzenesulfonyl hydrazide), allylbis (sulfonylhydrazide); p-toluylene sulfonyl semicarbazide, 4,4'- Semi-carbazide compounds such as oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N, N'-dinitrosopentamethylenetetramine, N, N'-dimethyl- Examples thereof include N-nitroso compounds such as N, N'-dinitrosoterephthalamide. Examples of the heat-expandable microspheres include microspheres having a structure in which a substance that easily gasifies and expands by heating is enclosed in a shell. Examples of the substance that easily gasifies and expands by the above heating include isobutane, propane, and pentane. A heat-expandable microsphere can be produced by encapsulating a substance that easily gasifies and expands by heating in a shell-forming substance by a core selvation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal meltability or a substance that can explode due to the action of thermal expansion of the encapsulating substance can be used. Examples of such substances include vinylidene chloride / acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethylmethacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.

Examples of the pressure-sensitive pressure-sensitive adhesive layer include a pressure-sensitive pressure-sensitive adhesive layer. The pressure-sensitive pressure-sensitive adhesive layer has a form in which the pressure-sensitive adhesive layer formed from the above-mentioned radiation-curable pressure-sensitive adhesive is cured in advance by irradiation with respect to the pressure-reducing type pressure-sensitive adhesive layer and has a certain adhesive strength. Contains an adhesive layer. As the pressure-sensitive adhesive forming the non-reducing adhesive strength type pressure-sensitive adhesive layer, one type of pressure-sensitive adhesive may be used, or two or more types of pressure-sensitive adhesive may be used. Further, the entire pressure-sensitive adhesive layer may be a non-reduced adhesive strength type pressure-sensitive adhesive layer, or a part of the pressure-sensitive adhesive layer may be a non-reduced pressure-sensitive adhesive layer. For example, when the pressure-sensitive adhesive layer has a single-layer structure, the entire pressure-sensitive adhesive layer may be a non-reduced pressure-sensitive adhesive layer, or a specific portion of the pressure-sensitive adhesive layer (for example, a target to be attached to a ring frame). The region (the region outside the central region) is the non-reducing adhesive strength layer, and other parts (for example, the central region to which the semiconductor wafer is to be attached) are the adhesive strength-reducable adhesive. It may be an agent layer. When the pressure-sensitive adhesive layer has a laminated structure, all the pressure-sensitive adhesive layers in the laminated structure may be non-reduced adhesive strength type pressure-sensitive adhesive layers, and some of the pressure-sensitive adhesive layers in the laminated structure have non-adhesive strength. It may be a reduced pressure-sensitive adhesive layer.

The pressure-sensitive adhesive layer (irradiated radiation-curable pressure-sensitive adhesive layer) in which the pressure-sensitive adhesive layer (non-irradiated radiation-curable pressure-sensitive adhesive layer) formed from the radiation-curable pressure-sensitive adhesive is previously cured by irradiation is radiation. Even if the adhesive strength is reduced by irradiation, it exhibits adhesiveness due to the polymer components contained in it, and it is possible to exhibit the minimum adhesive strength required for the adhesive layer of the dicing tape in the individualization step or the like. be. When the radiation-irradiated radiation-curable pressure-sensitive adhesive layer is used, the entire pressure-sensitive adhesive layer may be the radiation-irradiated radiation-curable pressure-sensitive adhesive layer in the surface spreading direction of the pressure-sensitive adhesive layer, and a part of the pressure-sensitive adhesive layer may be used. The radiation-irradiated radiation-curable pressure-sensitive adhesive layer may be used, and the other portion may be a radiation-unirradiated radiation-curable pressure-sensitive adhesive layer. In the present specification, the “radiocurable pressure-sensitive adhesive layer” refers to a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, which is a radiation-curable non-irradiated radiation-curable pressure-sensitive adhesive layer and the pressure-sensitive adhesive. Includes both a radiation-cured, radiation-curable pressure-sensitive adhesive layer after the agent layer has been cured by irradiation.

As the pressure-sensitive adhesive for forming the pressure-sensitive pressure-sensitive adhesive layer, a known or conventional pressure-sensitive pressure-sensitive adhesive can be used, and an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer is preferably used. Can be done. When the pressure-sensitive adhesive layer contains an acrylic polymer as a pressure-sensitive pressure-sensitive adhesive, the acrylic polymer may be a polymer containing a structural unit derived from (meth) acrylic acid ester as the structural unit having the largest mass ratio. preferable. As the acrylic polymer, for example, the acrylic polymer described as the acrylic polymer that can be contained in the above-mentioned additive-type radiation-curable pressure-sensitive adhesive can be adopted.

In addition to the above-mentioned components, the pressure-sensitive adhesive layer or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer is a known or commonly used pressure-sensitive adhesive layer such as a cross-linking accelerator, a pressure-sensitive adhesive, an antiaging agent, and a colorant (pigment, dye, etc.). The additive used in the above may be blended. Examples of the colorant include compounds that are colored by irradiation. When a compound to be colored by irradiation is contained, only the irradiated portion can be colored. The compound to be colored by the above irradiation is a compound which is colorless or light-colored before the irradiation, but becomes colored by the irradiation, and examples thereof include leuco dyes and the like. The amount of the compound to be colored by the above irradiation is not particularly limited and can be appropriately selected.

The thickness of the pressure-sensitive adhesive layer is not particularly limited, but when the pressure-sensitive adhesive layer is a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, the adhesive strength of the pressure-sensitive adhesive layer to the back-adhesive film before and after radiation curing. From the viewpoint of balancing, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 25 μm.

The dicing tape-integrated back-adhesion film of the present invention (excluding the separator if it has a separator) preferably has a linear transmittance of infrared rays having a wavelength of 1000 nm of 20% or more, more preferably 35% or more, still more preferably. It is 50% or more. When the linear transmittance is 20% or more, the dicing tape-integrated back-adhesion film has a high transmittance of laser light having a wavelength of around 1000 nm to be irradiated to form a modified region, and therefore is attached to the back-adhesion film. Later, it becomes possible to irradiate a laser beam from the dicing tape side to form a modified region on the semiconductor wafer. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the back-adhesion film, and the semiconductor wafer can be individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Will be easier.

The dicing tape-integrated back-adhesion film of the present invention (excluding the separator if it has a separator) preferably has a linear transmittance (linear transmittance D) of infrared rays having a wavelength of 1342 nm of 20% or more, more preferably 40. % Or more, more preferably 50% or more. When the linear transmittance D is 20% or more, the dicing tape-integrated back-adhesion film has a high transmittance of laser light having a wavelength of 1342 nm to be irradiated to form a modified region, and therefore is attached to the back-adhesion film. Later, it becomes possible to more efficiently form a modified region on the semiconductor wafer by irradiating a laser beam from the dicing tape side. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the back-adhesion film, and the semiconductor wafer can be individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Will be easier.

The dicing tape-integrated back-adhesion film of the present invention (excluding the separator if it has a separator) preferably has a total light transmittance (total light transmittance C) of infrared rays having a wavelength of 1342 nm of 60% or more, more preferably. Is 70% or more, more preferably 80% or more. The total light transmittance C can be measured using a known spectrophotometer.

The back-adhesion film with integrated dicing tape of the present invention (excluding the separator if it has a separator) has a ratio of the total light transmittance C of infrared rays having a wavelength of 1342 nm to the linear transmittance D [total light transmittance C (%)). / Linear transmittance D (%)] is preferably 1.0 to 5.0, more preferably 1.0 to 3.5, and even more preferably 1.0 to 2.0. When the above ratio is within the above range, the dicing tape-integrated back-adhesion film tends to selectively transmit the laser light to be irradiated to form the modified region, and therefore, after being attached to the back-adhesion film. , It becomes easier to form a modified region on the semiconductor wafer by irradiating a laser beam from the dicing tape side. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the back-adhesion film, and the semiconductor wafer can be individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Will be easier. The total light transmittance C can be measured using a known spectrophotometer.

The dicing tape integrated back contact film (excluding the separator when having a separator) of the present invention preferably has a haze value of 80% or less, more preferably 73% or less, still more preferably 50% or less. When the haze value is 80% or less, the dicing tape-integrated back-adhesion film is less likely to scatter the laser light irradiated to form the modified region. Therefore, after the dicing tape is attached to the back-adhesion film, the dicing tape side. It is possible to efficiently form a modified region on a semiconductor wafer by irradiating the semiconductor wafer with a laser beam. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the back-adhesion film, and the semiconductor wafer can be individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Will be easier. The haze value can be measured according to JIS K7361-1 (1997).

In the dicing tape integrated back contact film of the present invention, the arithmetic average surface roughness of both the back surface of the base material and the surface of the back contact film is preferably 100 nm or less, more preferably 80 nm or less, still more preferably 60 nm or less. be. When the arithmetic average surface roughness is 100 nm or less, the dicing tape-integrated semiconductor back-adhesion film is less likely to scatter the laser light to be irradiated to form the modified region. Irradiation of laser light from the dicing tape side makes it possible to efficiently form a modified region on the semiconductor wafer. For this reason, it is not necessary to form a modified region on the semiconductor wafer before it is attached to the back-adhesion film, and the semiconductor wafer can be individualized without chipping of the semiconductor chip or peeling from the back-adhesion film at the time of attachment. Will be easier.

In the dicing tape integrated back contact film of the present invention, the arithmetic average surface roughness of the substrate surface (the surface on the side where the pressure-sensitive adhesive layer is formed in FIGS. 1 and 2) is not particularly limited, and is, for example, 100 nm or more. May be. In this case, it is preferable that the recesses on the surface of the base material are filled with the pressure-sensitive adhesive layer. When the recesses on the surface of the base material are filled with the adhesive layer, diffused reflection of the laser light by the recesses can be suppressed, and the modified region can be more efficiently formed on the semiconductor wafer by irradiating the laser light from the dicing tape side. It becomes possible to form. Examples of the surface having an arithmetic average surface roughness of 100 nm or more include an embossed surface and the like.

The thickness of the dicing tape integrated back contact film (excluding the separator when having a separator) of the present invention is, for example, 70 to 200 μm, preferably 80 to 170 μm, and more preferably 90 to 150 μm.

The dicing tape integrated back contact film of the present invention may have a separator on the surface of the back contact film. Specifically, each dicing tape-integrated back-adhesion film may be in the form of a sheet having a separator, or the separator is long and a plurality of dicing tape-integrated back-adhesion films are formed on the separator. It may be arranged and the separator may be wound in the form of a roll. The separator is an element for covering and protecting the surface of the back contact film, and is peeled off from the sheet when the dicing tape integrated back contact film of the present invention is used. Examples of the separator include polyethylene terephthalate (PET) films, polyethylene films, polypropylene films, plastic films and papers surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent.

The thickness of the separator is, for example, 10 to 200 μm, preferably 15 to 150 μm, and more preferably 20 to 100 μm. When the thickness is 10 μm or more, it is difficult to break due to a notch during processing of the separator. When the thickness is 200 μm or less, the dicing tape-integrated back contact film can be more easily peeled off from the separator when the film is attached to the substrate and the frame.

[Manufacturing method of back contact film with integrated dicing tape]
The dicing tape-integrated back-adhesion film 1 according to the embodiment of the dicing tape-integrated back-adhesion film of the present invention is manufactured, for example, as follows.

The dicing tape 10 of the dicing tape integrated back contact film 1 shown in FIGS. 1 and 2 can be manufactured by providing the pressure-sensitive adhesive layer 12 on the prepared base material 11. For example, the resin base material 11 can be obtained by forming a film by a known or conventional film forming method. Examples of the film-forming method include a calendar film-forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry laminating method. The base material 11 is subjected to surface treatment as needed. In the formation of the pressure-sensitive adhesive layer 12, for example, after preparing a pressure-sensitive adhesive composition (adhesive) for forming the pressure-sensitive adhesive layer, the composition is first applied on a base material 11 or a separator to form a pressure-sensitive adhesive composition. Form a layer. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. Next, in this pressure-sensitive adhesive composition layer, the solvent is removed as needed by heating, and a cross-linking reaction is caused as needed. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12 is formed on the separator, the pressure-sensitive adhesive layer 12 with the separator is attached to the base material 11. As a result, the dicing tape 10 having a laminated structure of the base material 11 and the pressure-sensitive adhesive layer 12 is produced.

Regarding the adhesive layer 21, first, a composition (adhesive composition) for forming the adhesive layer 21 containing a resin, a filler, a curing catalyst, a solvent, and the like is prepared. Next, the adhesive composition is applied onto the separator to form a coating film, and then the coating film is solidified by desolvation, curing, or the like, if necessary, to form the adhesive layer 21. The coating method is not particularly limited, and examples thereof include known or conventional coating methods such as roll coating, screen coating, and gravure coating. The solvent removal condition is, for example, within the range of a temperature of 70 to 160 ° C. and a time of 1 to 5 minutes.

As shown in FIG. 2, when the back contact film 20 has a laminated structure including the adhesive layer 21 and the laser mark layer 22, the adhesive layer 21 and the laser mark layer 22 are individually manufactured. The adhesive layer 21 can be produced in the same manner as described above. On the other hand, the laser mark layer 22 is formed by applying a resin composition for forming the laser mark layer 22 on a separator to form a resin composition layer, and then removing the solvent and curing by heating to solidify the resin composition layer. It can be produced by letting it. In the preparation of the laser mark layer 22, the heating temperature is, for example, 90 to 160 ° C., and the heating time is, for example, 2 to 4 minutes. As described above, the adhesive layer 21 and the laser mark layer 22 can be produced in the form of each having a separator. Then, the exposed surfaces of the adhesive layer 21 and the laser mark layer 22 are bonded to each other to produce a back surface adhesion film 20 having a laminated structure of the adhesive layer 21 and the laser mark layer 22.

Next, the back surface adhesion film 20 (laser mark layer 22 if the laser mark layer 22 is provided) obtained above is attached to the pressure-sensitive adhesive layer 12 side of the dicing tape 10. The bonding temperature is, for example, 30 to 50 ° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm. When the pressure-sensitive adhesive layer 12 is the radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays before the bonding, or the base material 11 may be irradiated after the bonding. Radiation such as ultraviolet rays may be applied to the pressure-sensitive adhesive layer 12 from the side. Alternatively, such irradiation may not be performed in the manufacturing process of the dicing tape integrated back contact film 1 (in this case, the pressure-sensitive adhesive layer 12 is radiation-cured in the process of using the dicing tape integrated back contact film 1). Is possible). When the pressure-sensitive adhesive layer 12 is an ultraviolet curable type, the amount of ultraviolet irradiation for curing the pressure-sensitive adhesive layer 12 is, for example, 50 to 500 mJ / cm ² . The region (irradiation region R) in which the dicing tape-integrated back-adhesive film 1 is irradiated as a measure for reducing the adhesive force of the adhesive layer 12 is, for example, as shown in FIGS. 1 and 2, the back-adhesive film in the adhesive layer 12. 20 This is an area within the bonding area excluding the peripheral portion thereof.

As described above, for example, the dicing tape integrated back contact film 1 shown in FIGS. 1 and 2 can be manufactured.

[Manufacturing method of semiconductor devices]
A semiconductor device can be manufactured by using the dicing tape integrated back contact film of the present invention. Specifically, the process of attaching the back surface of the semiconductor wafer to the back surface adhesion film side (particularly the adhesive layer side) of the dicing tape integrated back surface adhesion film of the present invention (pasting process) and the process of dividing the semiconductor wafer by laser light irradiation are planned. The step of forming a modified region along the line (laser light irradiation step) and the dicing tape in the dicing tape integrated back contact film of the present invention under relatively low temperature conditions are expanded to form a semiconductor wafer and the back surface. A manufacturing method including a step of cutting the adhesion film along the planned division line to obtain a semiconductor chip with a back contact film (individualization step) and a step of picking up the semiconductor chip with a back contact film (pickup step). Therefore, a semiconductor device can be manufactured. 3 to 7 show a process in a method of manufacturing a semiconductor device using the dicing tape integrated back contact film 1 shown in FIG. 2, but the dicing tape integrated back contact film 1 of the present invention shown in FIG. 2 is used. Alternatively, the dicing tape integrated back contact film 1 shown in FIG. 1 may be used.

The method for manufacturing a semiconductor device may include a step of thinning a semiconductor wafer (wafer thinning step) before the pasting step. In the wafer thinning step, as shown in FIGS. 3A and 3B, the semiconductor wafer W has a predetermined thickness while the semiconductor wafer W is held on the wafer processing tape (surface protective film) T1. It is thinned by grinding from the back Wa. The grinding process can be performed using a grinding device equipped with a grinding wheel.

(Attachment process)
In the pasting step, for example, as shown in FIG. 4A, the semiconductor wafer 30 ground in the wafer thinning step is held by the wafer processing tape T1 and the dicing tape integrated back contact film 1 is used. It is attached to the back surface adhesion film 20 side (particularly the adhesive layer 21 side). The surface of the semiconductor wafer 30 is provided with bumps (not shown) for mounting flip chips. By using the dicing tape integrated back contact film of the present invention, a modified region can be formed later, so that the semiconductor wafer 30 does not need to have a modified region formed at this stage, whereby the semiconductor wafer The semiconductor chip does not bite into the wafer processing tape T1 due to the pressure at the time of sticking 30. After that, as shown in FIG. 4B, the wafer processing tape T1 is peeled off from the semiconductor wafer 30. By using the dicing tape integrated back contact film of the present invention, it is not necessary for the semiconductor wafer 30 to have a modified region, whereby the semiconductor chip whose outer peripheral portion is cut when the wafer processing tape T1 is peeled off. Does not peel off together with the wafer processing tape T1.

(Thermosetting process)
When the back-adhesive film has a thermosetting adhesive layer, it is preferable to have a step (thermosetting step) of thermosetting the adhesive layer in the back-adhesive film after the pasting step. For example, in the above heat curing step, a heat treatment for heat curing the adhesive layer 21 is performed. The heating temperature is preferably 80 to 200 ° C, more preferably 100 to 150 ° C. The heating time is preferably 0.5 to 5 hours, more preferably 1 to 3 hours. Specifically, the heat treatment is carried out at 120 ° C. for 2 hours. In the heat-curing step, the heat-curing of the adhesive layer 21 enhances the adhesion between the back-adhesion film 20 of the dicing tape-integrated back-adhesion film 1 and the semiconductor wafer 30, and the dicing tape-integrated back-adhesion film 1 and its back-adhesion. The fixing holding force of the film 20 to the wafer is increased. Further, when the back-adhesive film does not have a thermosetting adhesive layer, it may be baked for several hours in the range of, for example, 50 to 100 ° C., whereby the wettability of the adhesive layer interface is improved, and the wettability is improved. Wafer fixing holding force is increased.

(Laser marking process)
When the back contact film has a laser mark layer, the method for manufacturing the semiconductor device includes a step (laser marking step) of irradiating the laser mark layer with a laser from the base material side of the dicing tape to perform laser marking. Is preferable. The laser marking step is preferably performed after the thermosetting step. Specifically, in the laser marking step, for example, the laser mark layer 22 is irradiated with a laser from the side of the base material 11 of the dicing tape 10 to perform laser marking. By this laser marking process, various information such as character information and graphic information can be engraved on each semiconductor chip. In the laser marking process, it is possible to efficiently perform laser marking on a plurality of semiconductor chips in a single laser marking process. Examples of the laser used in the laser marking step include a gas laser and a solid-state laser. Examples of the gas laser include a carbon dioxide gas laser (CO ₂ laser) and an excimer laser. Examples of the solid-state laser include an Nd: YAG laser. The laser marking step may be performed for each semiconductor chip after the individualization step described later, the pickup step, and the like.

Before the sticking step, between the sticking step and the heat curing step, between the heat curing step and the laser marking step, after the laser marking step, etc., at appropriate stages such as, the dicing tape integrated back surface adhesion. After the ring frame 41 is attached on the adhesive layer 12 of the dicing tape 10 in the film 1, the dicing tape integrated back contact film 1 with the semiconductor wafer 30 is fixed to the holder 42 of the expanding device.

(Laser light irradiation process)
In the laser light irradiation step, for example, as shown in FIG. 5A, the laser light whose condensing point is aligned inside the semiconductor wafer 30 is emitted from the dicing tape 10 side of the dicing tape integrated back contact film 1 to the semiconductor wafer 30. A modified region 30a is formed in the semiconductor wafer 30 due to ablation due to absorption of multiple photons by irradiating the wafer along a planned division line. The modified region 30a is a fragile region for separating the semiconductor wafer 30 into semiconductor chip units. A method of forming a modified region 30a on a planned division line by laser light irradiation on a semiconductor wafer 30 is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370, but the laser light irradiation conditions in the embodiment are described. For example, it is appropriately adjusted within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm, 1088 nm, 1099 nm, or 1342 nm
Laser light spot cross-sectional area 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linear polarization (B) Condensing lens Magnification 100x or less NA 0.55
Transmittance with respect to laser light wavelength 100% or less (C) Movement speed of the cutting table on which the semiconductor substrate is placed 280 mm / sec or less

(Individualization process)
In the individualization step, for example, an expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 5 (b), and the semiconductor wafer 30 is individually formed into a plurality of semiconductor chips 31. At the same time as being separated, the back contact film 20 of the back contact film 1 integrated with the dicing tape is cut into small pieces of the back contact film 20'to obtain a semiconductor chip 31 with the back contact film. Specifically, in the cool expand step, cracks are formed in the fragile modified region 30a of the semiconductor wafer 30, and individualization into the semiconductor chip 31 occurs. At the same time, in the cool expanding step, in the back contact film 20 that is in close contact with the pressure-sensitive adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region of the semiconductor wafer 30 in which each semiconductor chip 31 is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the crack-forming portion of the wafer located in the vertical direction in the drawing without such a deformation suppressing effect. As a result, in the back contact film 20, the portions of the crack-forming portions between the semiconductor chips 31 located in the vertical direction in the drawing are cut off.

In the cool expanding step, the hollow columnar push-up member 43 provided in the expanding device was brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing tape integrated back contact film 1 and raised, and the semiconductor wafer 30 was bonded. The dicing tape 10 of the dicing tape integrated back contact film 1 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30. This expansion is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding step is preferably 0.1 to 300 mm / sec. The amount of expansion in the cool expanding step is preferably 3 to 25 mm.

After the split by the expansion, as shown in FIG. 5C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10. After that, an expanding step may be performed to increase the separation distance between the semiconductor chips 31 with the back contact film. For example, with the push-up member 43 raised again, the semiconductor chip 31 is vacuum-sucked from the dicing tape 10 side and fixed to the table, the expanded state is released, and the push-up region of the dicing tape 10 is heated to shrink (heat shrinkage). By doing so, the distance between the expanded semiconductor chips 31 can be maintained. The expanding amount (pushing amount) when the push-up member 43 is raised again is, for example, 3 to 25 mm, and the expanding speed (speed at which the push-up member 43 is raised) is, for example, 0.1 to 300 mm / sec. The distance between the heater and the push-up region during heat shrinkage is, for example, 5 to 100 mm, and the rotation speed of the dicing tape is, for example, 1 to 10 ° / sec.

(Irradiation process)
The method for manufacturing the semiconductor device may include a step (irradiation step) of irradiating the pressure-sensitive adhesive layer with radiation from the base material side. When the pressure-sensitive adhesive layer of the dicing tape is a layer formed of a radiation-curable pressure-sensitive adhesive, instead of the above-mentioned irradiation in the process of manufacturing the dicing tape-integrated back-adhesive film, the above-mentioned individualization step is performed. Later, radiation such as ultraviolet rays may be applied to the pressure-sensitive adhesive layer from the side of the base material. The irradiation amount is, for example, 50 to 500 mJ / cm ² . The region (irradiation region R shown in FIGS. 1 and 2) in which the dicing tape-integrated back-adhesive film is irradiated as a measure for reducing the adhesive strength of the adhesive layer is, for example, in the back-adhesive film bonding region in the adhesive layer. This is the area excluding the peripheral part.

(Pickup process)
The pickup step may be performed after, if necessary, a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with the back contact film using a cleaning liquid such as water. For example, as shown in FIG. 6, the semiconductor chip 31 with the back contact film is picked up from the dicing tape 10. For example, in a state where the dicing tape 10 with the ring frame 41 is held by the holder 42 of the apparatus, the pin member 51 of the pickup mechanism is on the lower side in the drawing of the dicing tape 10 for the semiconductor chip 31 with the back contact film to be picked up. Is raised and pushed up through the dicing tape 10, and then sucked and held by the suction jig 52. In the pickup step, the push-up speed of the pin member 51 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 51 is, for example, 50 to 3000 μm.

(Flip chip mounting process)
It is preferable that the method for manufacturing the semiconductor device includes a step (flip chip step) of mounting the semiconductor chip 31 with a back contact film on the flip chip after the pickup step. For example, as shown in FIG. 7, a semiconductor chip 31 with a back contact film is flip-chip mounted on a mounting substrate 61. Examples of the mounting board 61 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. By flip-chip mounting, the semiconductor chip 31 is electrically connected to the mounting board 61 via the bump 62. Specifically, the substrate (electrode pad) (not shown) of the semiconductor chip 31 on the circuit forming surface side and the terminal portion (not shown) of the mounting substrate 61 are electrically connected via the bump 62. To. The bump 62 is, for example, a solder bump. Further, a thermosetting underfill agent 63 is interposed between the semiconductor chip 31 and the mounting substrate 61.

As described above, the semiconductor device can be manufactured by using the dicing tape integrated back contact film of the present invention.

Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

Example 1
<Making dicing tape>
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer, 100 parts by mass of 2-ethylhexyl acrylate, 19 parts by mass of 2-hydroxyethyl acrylate, and a solvent as a polymerization initiator. A mixture containing 0.4 parts by mass of benzoyl oxide and 80 parts by mass of toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours in a nitrogen atmosphere (polymerization reaction). As a result, a polymer solution containing the acrylic polymer P ₁ was obtained. Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ and 2-methacryloyloxyethyl isocyanate (MOI) was stirred at 50 ° C. for 60 hours in an air atmosphere (addition reaction). In the reaction solution, the amount of MOI blended is 12 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in the side chain was obtained. Next, in the polymer solution, 0.75 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Toso Co., Ltd.) with respect to 100 parts by mass of the acrylic polymer P ₂ and 2 parts by mass of photopolymerization were started. An agent (trade name "Irgacure 651", manufactured by BASF) and toluene were added and mixed to obtain a pressure-sensitive adhesive composition having a solid content concentration of 28% by mass. Next, the pressure-sensitive adhesive composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a pressure-sensitive adhesive composition layer. .. Next, the composition layer was desolvated by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 μm on the PET separator. Next, using a laminator, a polypropylene film (trade name "SC040PP1-BL", thickness 40 μm, manufactured by Kurashiki Spinning Co., Ltd.) as a base material was applied to the exposed surface of this adhesive layer on the embossed surface of the base material. The adhesive layer was bonded at room temperature so as to be in contact with the pressure-sensitive adhesive layer and so that the pressure-sensitive adhesive layer filled the recesses of the embossed surface. The laminated body was subsequently stored at 23 ° C. for 72 hours. The dicing tape of Example 1 was prepared as described above.

<Making a back contact film>
Acrylic resin A ₁ (trade name "Taisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₁ (trade name "EPPN-501HY", manufactured by Nippon Kayaku Co., Ltd.) 9 parts by mass 12 parts by mass of phenol resin H ₁ (trade name "MEH7851-H", manufactured by Meiwa Kasei Co., Ltd.) and filler F ₁ (trade name "SO-25R", average particle size: 0.5 μm, Admatex Co., Ltd. Manufactured by) 69 parts by mass and 7 parts by mass of colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) are added to methyl ethyl ketone and mixed to form a resin composition having a solid content concentration of 28% by mass. Got Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and a back-adhesion film of Example 1 having a thickness of 25 μm was prepared on a PET separator.

<Making a back contact film with integrated dicing tape>
The pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and the exposed surface of the back-adhesive film of Example 1 are bonded together using a hand roller, and a laminate including the dicing tape and the back-adhesive film is included. A dicing tape-integrated back-adhesive film having a structure was produced.

Example 2
<Making a back contact film>
Acrylic resin A ₁ (trade name "Taisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₁ (trade name "EPPN-501HY", manufactured by Nippon Kayaku Co., Ltd.) 9 parts by mass 12 parts by mass of phenol resin H ₁ (trade name "MEH7851-H", manufactured by Meiwa Kasei Co., Ltd.) and filler F ₁ (trade name "SO-25R", average particle size: 0.5 μm, Admatex Co., Ltd. (Manufactured) 69 parts by mass and 4 parts by mass of colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) are added to methyl ethyl ketone and mixed to form a resin composition having a solid content concentration of 28% by mass. Got Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and a back-adhesion film of Example 2 having a thickness of 25 μm was prepared on a PET separator.

<Making a back contact film with integrated dicing tape>
The pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and the exposed surface of the back-adhesive film of Example 2 are bonded together using a hand roller, and a laminate containing the dicing tape and the back-adhesive film is included. A dicing tape-integrated back-adhesive film having a structure was produced.

Example 3
<Making a back contact film>
Acrylic resin A ₁ (trade name "Taisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₁ (trade name "EPPN-501HY", manufactured by Nippon Kayaku Co., Ltd.) 9 parts by mass 12 parts by mass of phenol resin H ₁ (trade name "MEH7851-H", manufactured by Meiwa Kasei Co., Ltd.) and filler F ₂ (trade name "YA050C-MJI", average particle size: 0.05 μm, Admatex Co., Ltd. (Manufactured) 69 parts by mass and 4 parts by mass of colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) are added to methyl ethyl ketone and mixed to form a resin composition having a solid content concentration of 28% by mass. Got Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and a back-adhesion film of Example 3 having a thickness of 25 μm was prepared on a PET separator.

<Making a back contact film with integrated dicing tape>
The pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and the exposed surface of the back-adhesive film of Example 3 are bonded together using a hand roller, and a laminate including the dicing tape and the back-adhesive film is included. A dicing tape-integrated back-adhesive film having a structure was produced.

Example 4
<Making a back contact film>
(Preparation of adhesive layer)
Acrylic resin A ₂ (trade name "Teisan Resin SG-708-6", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₂ (trade name "YSLV-80XY", manufactured by Toto Kasei Co., Ltd.) 19 mass Epoxy resin E ₃ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) 78 parts by mass and phenol resin H ₂ (trade name "MEH7851-SS", manufactured by Meiwa Kasei Co., Ltd.) 89 mass Parts and 190 parts by mass of filler F ₁ (trade name "SO-25R", average particle size: 0.5 μm, manufactured by Admatex Co., Ltd.) are added to methyl ethyl ketone and mixed to form a resin having a solid content concentration of 28% by mass. The composition was obtained. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and an adhesive layer having a thickness of 8 μm was prepared on the PET separator.

(Preparation of laser mark layer)
Acrylic resin A ₁ (trade name "Taisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₃ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) 44 mass Epoxy resin E ₄ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) 29 parts by mass, phenol resin H ₂ (trade name "MEH7851-SS", manufactured by Meiwa Kasei Co., Ltd.) 77 parts by mass. Filler F ₁ (trade name "SO-25R", average particle size: 0.5 μm, manufactured by Admatex Co., Ltd.) 175 parts by mass and colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) ) 13 parts by mass and 21 parts by mass of a thermosetting catalyst Z ₁ (trade name "TPP", manufactured by Hokuko Kagaku Kogyo Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. rice field. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to remove the solvent and heat-cured to prepare a laser mark layer (thermosetting layer) having a thickness of 17 μm on the PET separator.

The laser mark layer on the PET separator and the adhesive layer on the PET separator prepared as described above were bonded together using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded to each other under the conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. As described above, the back contact film of Example 4 was produced.

<Making a back contact film with integrated dicing tape>
The PET separator on the laser mark layer side was peeled off from the back contact film of Example 4, and the pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and the surface exposed by peeling of the PET separator in the back contact film were separated. It was bonded using a hand roller. As described above, a dicing tape-integrated back-adhesion film having a laminated structure including the dicing tape and the back-adhesion film was produced.

Example 5
<Making a back contact film>
(Preparation of adhesive layer)
Acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₂ (trade name "YSLV-80XY", manufactured by Toto Kasei Co., Ltd.) 19 parts by mass. , Epoxy resin E ₃ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) 52 parts by mass, epoxy resin E ₄ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) 22 parts by mass, Phenolic resin H ₂ (trade name "MEH7851-SS", manufactured by Meiwa Kasei Co., Ltd.) and filler F ₁ (trade name "SO-25R", average particle size: 0.5 μm, manufactured by Admatex Co., Ltd.) 177 parts by mass, colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) and heat curing catalyst Z ₂ (trade name "2PHZ-PW", manufactured by Shikoku Kasei Co., Ltd.) 5 parts by mass was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and an adhesive layer (thermosetting layer) having a thickness of 8 μm was prepared on the PET separator.

(Preparation of laser mark layer)
Acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₁ (trade name "EPPN-501HY", manufactured by Nippon Kayaku Co., Ltd.) 66 parts by mass And 52 parts by mass of epoxy resin E ₃ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) and 22 parts by mass of epoxy resin E ₄ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.). , Phenolic resin H ₁ (trade name "MEH7851-H", manufactured by Meiwa Kasei Co., Ltd.) 84 parts by mass and filler F ₁ (trade name "SO-25R", average particle size: 0.5 μm, manufactured by Admatex Co., Ltd.) ) 177 parts by mass, colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) and 15 parts by mass, thermal curing catalyst Z ₁ (trade name "TPP", manufactured by Hokuko Chemical Industry Co., Ltd.) 24 parts by mass was added to the methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and a laser mark layer having a thickness of 17 μm was prepared on the PET separator.

The laser mark layer on the PET separator and the adhesive layer on the PET separator prepared as described above were bonded together using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded to each other under the conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. As described above, the back contact film of Example 5 was produced.

<Making a back contact film with integrated dicing tape>
The PET separator on the laser mark layer side was peeled off from the back contact film of Example 5, and the pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and the surface exposed by peeling of the PET separator in the back contact film were separated. It was bonded using a hand roller. As described above, a dicing tape-integrated back-adhesion film having a laminated structure including the dicing tape and the back-adhesion film was produced.

Example 6
<Making a back contact film>
(Preparation of laser mark layer)
Acrylic resin A ₂ (trade name "Teisan Resin SG-708-6", manufactured by Nagase ChemteX Corporation) 100 parts by mass and acrylic resin A ₃ (trade name "Teisan Resin SG-N50", manufactured by Nagase Chemtex Co., Ltd.) ) 25 parts by mass and epoxy resin E ₃ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) 64 parts by mass and epoxy resin E ₄ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) 28 parts by mass, phenol resin H ₂ (trade name "MEH7851-SS", manufactured by Meiwa Kasei Co., Ltd.) 96 parts by mass, filler F ₁ (trade name "SO-25R", average particle size: 0.5 μm, stock 219 parts by mass of Admatex (manufactured by Admatex), 16 parts by mass of colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.), and thermal curing catalyst Z ₁ (trade name "TPP", Hokuko Chemical Industry Co., Ltd.) (Manufactured by Co., Ltd.) 27 parts by mass was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to remove the solvent and heat-cured to prepare a laser mark layer (thermosetting layer) having a thickness of 17 μm on the PET separator.

The laser mark layer on the PET separator prepared as described above and the adhesive layer on the PET separator prepared in Example 4 were bonded together using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded to each other under the conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. As described above, the back contact film of Example 6 was produced.

<Making a back contact film with integrated dicing tape>
The PET separator on the laser mark layer side was peeled off from the back contact film of Example 6, and the pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and the surface exposed by peeling of the PET separator in the back contact film were separated. It was bonded using a hand roller. As described above, a dicing tape-integrated back-adhesion film having a laminated structure including the dicing tape and the back-adhesion film was produced.

Comparative Example 1
<Making a back contact film>
Acrylic resin A ₁ (trade name "Taisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₁ (trade name "EPPN-501HY", manufactured by Nippon Kayaku Co., Ltd.) 9 parts by mass 12 parts by mass of phenol resin H ₁ (trade name "MEH7851-H", manufactured by Meiwa Kasei Co., Ltd.) and filler F ₁ (trade name "SO-25R", average particle size: 0.5 μm, Admatex Co., Ltd. (Manufactured by) 69 parts by mass, colorant D ₁ (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) 7 parts by mass, heavy metal oxide-based colorant D ₂ (average particle diameter 0.02 μm) 17 mass The parts were added to the methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and a back-adhesion film of Comparative Example 1 having a thickness of 25 μm was prepared on a PET separator.

<Making a back contact film with integrated dicing tape>
The pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and the exposed surface of the back-adhesive film of Comparative Example 1 are bonded together using a hand roller, and a laminate containing the dicing tape and the back-adhesive film is included. A dicing tape-integrated back-adhesive film having a structure was produced.

Comparative Example 2
<Making dicing tape>
Using a laminator, a polypropylene film (trade name "SC040PP1-BL", thickness 40 μm, manufactured by Kurabo Industries Ltd.) as a base material was applied to the exposed surface of the pressure-sensitive adhesive layer produced in Example 1, and a mirror surface of the base material was applied. It was bonded at room temperature so that the finished surface was in contact with the pressure-sensitive adhesive layer. The laminated body was subsequently stored at 23 ° C. for 72 hours. As described above, the dicing tape of Comparative Example 2 was produced.

<Making a back contact film with integrated dicing tape>
The pressure-sensitive adhesive layer exposed in the dicing tape of Comparative Example 2 and the exposed surface of the back-adhesive film of Comparative Example 1 are bonded together using a hand roller, and a laminate including the dicing tape and the back-adhesive film is included. A dicing tape-integrated back-adhesive film having a structure was produced.

Comparative Example 3
<Making a back contact film>
(Preparation of adhesive layer)
Acrylic resin A ₂ (trade name "Teisan Resin SG-708-6", manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₂ (trade name "YSLV-80XY", manufactured by Toto Kasei Co., Ltd.) 19 mass Epoxy resin E ₃ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) 78 parts by mass and phenol resin H ₂ (trade name "MEH7851-SS", manufactured by Meiwa Kasei Co., Ltd.) 89 mass Parts, filler F ₁ (trade name "SO-25R", average particle size: 0.5 μm, manufactured by Admatex Co., Ltd.) 190 parts by mass, heavy metal oxide-based colorant D ₂ (average particle size 0.02 μm) 17 parts by mass was added to the methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a resin composition layer. Next, this composition layer was heated at 130 ° C. for 2 minutes to remove the solvent, and an adhesive layer having a thickness of 8 μm was prepared on the PET separator.

The laser mark layer on the PET separator prepared in Example 4 and the adhesive layer on the PET separator prepared as described above were bonded together using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded to each other under the conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. As described above, the back contact film of Comparative Example 3 was produced.

<Making a back contact film with integrated dicing tape>
The PET separator on the laser mark layer side was peeled off from the back contact film of Comparative Example 3, and the pressure-sensitive adhesive layer exposed in the dicing tape of Example 1 and the surface exposed by peeling of the PET separator in the back contact film were separated. It was bonded using a hand roller. As described above, a dicing tape-integrated back-adhesion film having a laminated structure including the dicing tape and the back-adhesion film was produced.

<Evaluation>
The back contact film and the dicing tape integrated back contact film obtained in Examples and Comparative Examples were evaluated as follows. The results are shown in Tables 1 and 2.

(1) Transmittance For the back-adhesion film and the dicing tape-integrated back-adhesion film obtained in Examples and Comparative Examples, a spectrophotometer (trade name "V-670", manufactured by JASCO Corporation) was used, respectively. , The transmittance was measured in the wavelength range of 1000 to 1342 nm. The linear transmittance was used when the measurement was performed without the integrating sphere, and the total light transmittance was used when the measurement was performed under the condition with the integrating sphere. From the measurement results, for the back-adhesion film, the linear transmittance A of infrared rays having a wavelength of 1000 nm, the linear transmittance B of infrared rays having a wavelength of 1342 nm, and their ratios [linear transmittance A (%) / linear transmittance B (%)]. And the ratio of the linear transmittance A'in the wavelength range of 1000 to 1342 nm and the linear transmittance B [linear transmittance A'(%) / linear transmittance B (%)] was derived. Further, for the back-adhesion film integrated with the dicing tape, the total light transmittance C and the linear transmittance D of infrared rays having a wavelength of 1342 nm, and their ratios [total light transmittance C (%) / linear transmittance D (%)] are determined. Derived.

(2) Haze For the haze of the dicing tape integrated back contact film obtained in Examples and Comparative Examples, the total light transmittance C and the linear transmittance D obtained in the above transmittance measurement were used in the following equation. Calculated based on.
Haze (%) = (total light transmittance C-linear transmittance D) / total light transmittance C

(3) Arithmetic Mean Surface Roughness The dicing tape-integrated back-adhesion film obtained in Examples and Comparative Examples was 50 times larger using an optical interference surface roughness meter (trade name "WykoNT9100", manufactured by Nippon Biko Co., Ltd.). The arithmetic average surface roughness (Ra) of the back surface adhesion film surface and the back surface of the base material was measured at the same magnification.

(4) Split evaluation The dicing tape-integrated back-adhesion film obtained in Examples and Comparative Examples was subjected to split evaluation as follows. First, a semiconductor wafer having a thickness of 300 μm and a size of 12 inches is bonded to the back contact film surface of a dicing tape integrated back contact film in which a ring frame is bonded to an adhesive layer under the conditions of a temperature of 80 ° C. and a pressure of 0.15 MPa. rice field. Next, a condensing point is aligned inside the semiconductor wafer, and a laser beam having a wavelength of 1064 nm is irradiated from the dicing tape side along a grid-like (2 mm × 2 mm) planned division line to form a modified region inside the semiconductor wafer. did. Then, the whole ring frame was heat-treated at a temperature of 80 ° C. for 1 hour. Then, the semiconductor wafer and the back contact film were cut using a die separator (trade name "DDS2300", manufactured by DISCO Corporation). Specifically, first, the cool expander unit is cooled at a temperature of -15 ° C for 2 minutes, and the cool expand is performed under the conditions of a cool expanding speed (expanding speed) of 200 mm / sec and a push-up amount (expanding amount) of 15 mm. Was performed to cut the semiconductor wafer. Then, after holding for 1 minute in the expanded state, further expanding is performed under the conditions of a speed (expanding speed) of 1 mm / sec and an expanding amount of 15 mm, the distance between the heater and the dicing tape is set to 20 mm, and the rotation speed of the dicing tape is set. The dicing tape at the thrust portion was thermally shrunk at 200 ° C. while rotating at 5 ° / sec. At this time, the number of sides on which the semiconductor chip and the back contact film were cut was counted on the four sides of each semiconductor chip, and the ratio of the number of cut sides to the number of all sides was calculated as the cutting rate. Further, the wavelength of the laser light to be irradiated was changed to the wavelengths of 1080 nm, 1099 nm, and 1342 nm, and the same evaluation was performed. Then, in all the evaluations at 1064 nm, 1080 nm, 1099 nm, and 1342 nm, the case where the split rate is 90% or more is ⊚, the case where it is 60% or more and less than 90% is ◯, and the case where it is 30% or more and less than 60% is Δ. The case of less than 30% was evaluated as x. When the dicing tape-integrated back-adhesion film was used in all the examples, chipping of the semiconductor chip and peeling from the back-adhesion film did not occur.

1 Dicing tape integrated back contact film 10 Dicing tape 11 Base material 12 Adhesive layer 20 Back contact film 21 Adhesive layer 22 Laser mark layer 30 Semiconductor wafer 30a Modified region 31 Semiconductor chip

Claims (7)

A dicing tape having a laminated structure including a base material and an adhesive layer,
A semiconductor back-adhesive film that is removably adhered to the adhesive layer of the dicing tape is provided.
The semiconductor back-adhesive film has an adhesive layer, and the adhesive layer contains a filler and / or a colorant.
The semiconductor back-adhesion film has a linear transmittance A of infrared rays having a wavelength of 1000 nm and a linear transmittance B of infrared rays having a wavelength of 1342 nm both of 20% or more, and the ratio of the linear transmittance A and the linear transmittance B. A semiconductor back-adhesion film integrated with a dicing tape having a [linear transmittance A (%) / linear transmittance B (%)] of 0.3 to 1.0. The dicing tape-integrated semiconductor back-adhesion film according to claim 1, wherein the semiconductor back-adhesion film has an adhesive layer and a laser mark layer, and the laser mark layer contains a filler and / or a colorant. The dicing tape integrated semiconductor according to claim 2, wherein the content ratio of the filler in the laser mark layer is 15% by mass or more and 50% by mass or less, and the content ratio of the colorant is 1% by mass or more and 10% by mass or less. Back contact film. The ratio [linear transmittance A'(%) / linear transmittance B (%)] of the linear transmittance A'of the infrared rays in the wavelength range of 1000 to 1342 nm and the linear transmittance B of the semiconductor back-adhesion film is 0. The dicing tape integrated semiconductor back contact film according to any one of claims 1 to 3 , which is 3 to 1.0. Claims 1 to 5.0, wherein the ratio [total light transmittance C (%) / linear transmittance D (%)] of the total light transmittance C and the linear transmittance D of the infrared rays having a wavelength of 1342 nm is 1.0 to 5.0. 4. The dicing tape integrated semiconductor back contact film according to any one of 4 . The dicing tape integrated semiconductor back contact fill according to any one of claims 1 to 5 , wherein the haze value is 80% or less. The dicing tape-integrated semiconductor back-adhesion film according to any one of claims 1 to 6 , wherein the arithmetic average surface roughness of both the back surface of the substrate and the surface of the semiconductor back-adhesion film is 100 nm or less.

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