JP7109918B2 - Dicing tape integrated semiconductor back adhesion film - Google Patents

Description

The present invention relates to a dicing tape-integrated semiconductor back adhesion film. More particularly, the present invention relates to a dicing tape-integrated semiconductor back adhesion film that can be used in the manufacturing process of semiconductor devices.

2. Description of the Related Art In manufacturing a semiconductor device having a flip-chip mounted semiconductor chip, a semiconductor back surface adhesive film is sometimes used as a film for forming a protective film on the so-called back surface of the chip. Moreover, such a semiconductor back surface adhesive film may be provided in a form integrated with a dicing tape (see Patent Documents 1 and 2).

Such a semiconductor back-surface adhesive film integrated with such a dicing tape (dicing tape-integrated semiconductor back-surface adhesive film) is used, for example, as follows. First, the semiconductor back contact film surface of the dicing tape-integrated semiconductor back contact film is attached to a semiconductor wafer as a work, and in order to increase the adhesion of the back contact film to the wafer, the back contact film is thermally cured by heating, Next, while the wafer is held by the dicing tape-integrated semiconductor back surface adhesive film, blade dicing is performed to separate the wafer into chips. In the dicing process, the wafer is cut into individual chips, and the back contact film is cut into small film pieces having sizes corresponding to the chips.

The blade dicing is a method generally used for separating semiconductor wafers into individual pieces, but there have been cases where cracks or chips (chipping) have occurred in the semiconductor chips obtained by blade dicing. If chipping occurs due to dicing, cracks may spread to the circuit surface due to expansion and contraction of the chip during heating in the process of mounting to a semiconductor device or reliability testing, etc., leading to an increase in the defective product rate.

In recent years, a technique is known in which a dicing tape in a dicing tape-integrated semiconductor back contact film is expanded to break the semiconductor back contact film. In this method, for example, a surface protective film is attached to the surface (circuit forming surface) of the semiconductor wafer to protect the surface of the semiconductor wafer, and in this state, a laser beam is irradiated to the dividing line of the semiconductor wafer to form a modified region. By forming, after the semiconductor wafer can be easily divided on the dividing line, the semiconductor wafer is thinned by back contact, or after the semiconductor wafer is thinned by back contact, the semiconductor wafer in this state A modified region is formed by irradiating the planned division line in the above with a laser beam, the back surface of this semiconductor wafer is attached to the semiconductor back surface adhesive film surface of the dicing tape integrated semiconductor back surface adhesive film, the surface protective film is peeled off, and then using an expanding device to stretch the dicing tape of the dicing tape-integrated semiconductor back adhesion film in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer, thereby cleaving both the semiconductor wafer and the semiconductor back adhesion film; Individual semiconductor chips (semiconductor chips with a semiconductor back surface adhesive film) are obtained.

JP 2011-151360 A WO2014/092200

However, in the method of breaking the semiconductor wafer by stretching after forming the modified region, when the semiconductor wafer with the surface protective film formed with the modified region is attached to the semiconductor back surface adhesive film, the pressure at the time of attachment causes the semiconductor to break. The wafer may be cut in the modified region and the semiconductor chip may dig into the surface protection film. As a result, the adhesion of the semiconductor wafer to the semiconductor back surface adhesive film may be insufficient, or chipping may occur due to contact with adjacent semiconductor chips. Moreover, when the surface protective film is peeled off after the semiconductor wafer with the surface protective film is attached to the semiconductor back surface adhesive film, the cut semiconductor chips on the outer periphery may be peeled off together with the surface protective film.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a dicing tape-integrated semiconductor capable of singulating a semiconductor wafer without causing chipping of the semiconductor chip and peeling from the back adhesion film. To provide a back adhesion film.

The present inventors have made intensive studies to achieve the above object, and as a result, a dicing tape having a laminated structure including a base material and an adhesive layer, and the adhesive layer in the dicing tape are releasably adhered. When the dicing tape-integrated semiconductor back adhesion film is provided with a semiconductor back adhesion film, and the semiconductor back adhesion film has a linear transmittance of 20% or more for infrared rays with a wavelength of 1000 nm, chipping of the semiconductor chip and damage from the back adhesion film occur. We have found that it is possible to singulate a semiconductor wafer without causing delamination. The present invention has been completed based on these findings.

That is, the present invention comprises a dicing tape having a laminated structure including a substrate and an adhesive layer, and a semiconductor back surface adhesive film that is releasably adhered to the adhesive layer of the dicing tape, The adhesive film provides a dicing tape-integrated semiconductor back adhesive film having a linear transmittance of 20% or more for infrared rays with a wavelength of 1000 nm. The dicing tape-integrated semiconductor back contact film having such a structure can be used in the manufacturing process of semiconductor devices.

As described above, the dicing tape-integrated semiconductor back adhesion film of the present invention has a linear transmittance of 20% or more for infrared rays having a wavelength of 1000 nm. The semiconductor back contact film in the dicing tape-integrated semiconductor back contact film of the present invention having such a structure has a high transmittance of laser light for forming the modified region. It is possible to form a modified region on a wafer with a laser beam. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the semiconductor back surface adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back surface adhesive film. It is possible.

The dicing tape-integrated semiconductor back contact film of the present invention preferably has a linear transmittance B of 20% or more for infrared rays having a wavelength of 1000 nm. The dicing tape-integrated semiconductor back contact film of the present invention having such a structure has a high transmittance of laser light for forming the modified region. It becomes possible to form a modified region in a semiconductor wafer by irradiating light. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the semiconductor back surface adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back surface adhesive film. easier.

The dicing tape-integrated semiconductor back adhesion film of the present invention has a ratio of the total light transmittance A to the linear transmittance B of infrared rays having a wavelength of 1000 nm [total light transmittance A (%)/linear transmittance B (%)] of 1. It is preferably between 0.0 and 4.5. Since the dicing tape-integrated semiconductor back contact film of the present invention having such a structure tends to selectively transmit laser light, the laser light is irradiated from the dicing tape side after being attached to the semiconductor back contact film. As a result, it becomes easier to form a modified region in a semiconductor wafer. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the semiconductor back surface adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back surface adhesive film. easier.

The dicing tape-integrated semiconductor back contact film of the present invention preferably has a haze value of 80% or less. Since the dicing tape-integrated semiconductor back adhesion film of the present invention having such a structure does not easily scatter laser light, it can be efficiently applied by irradiating laser light from the dicing tape side after being attached to the semiconductor back adhesion film. A modified region can be formed in a semiconductor wafer. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the semiconductor back surface adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back surface adhesive film. easier.

In the dicing tape-integrated semiconductor back adhesion film of the present invention, it is preferable that both the back surface of the substrate and the surface of the semiconductor back adhesion film have an arithmetic mean surface roughness of 100 nm or less. Since the dicing tape-integrated semiconductor back adhesion film of the present invention having such a structure does not easily scatter laser light, it can be efficiently applied by irradiating laser light from the dicing tape side after being attached to the semiconductor back adhesion film. A modified region can be formed in a semiconductor wafer. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the semiconductor back surface adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back surface adhesive film. easier.

By using the dicing tape-integrated semiconductor back contact film of the present invention, it is possible to singulate a semiconductor wafer without causing chipping of semiconductor chips and peeling from the back face contact film.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view (front cross-sectional view) showing an embodiment of a dicing tape-integrated semiconductor back contact film of the present invention; FIG. 2 is a schematic view (front cross-sectional view) showing another embodiment of the dicing tape-integrated semiconductor back contact film of the present invention. It is a schematic diagram (front sectional view) which shows one Embodiment of a wafer thinning process. It is the schematic (front sectional view) which shows one Embodiment of a sticking process. It is the schematic (front sectional view) which shows one Embodiment of a singulation process. It is a schematic diagram (front sectional view) which shows one Embodiment of a pick-up process. It is a schematic diagram (front sectional view) which shows one Embodiment of a flip-chip mounting process.

[Dicing tape-integrated semiconductor back adhesion film]
The dicing tape-integrated semiconductor back adhesion film of the present invention (sometimes simply referred to as "dicing tape-integrated back adhesion film") is a dicing tape having a laminated structure including a substrate and an adhesive layer, and the dicing tape and a semiconductor back adhesive film (sometimes simply referred to as "back adhesive film") releasably adhered to the pressure-sensitive adhesive layer. In this specification, the "front surface" of a semiconductor (workpiece) refers to the surface on which bumps for flip-chip mounting of the workpiece are formed, and the "back surface" refers to the opposite side of the surface, that is, the side on which bumps are formed. shall mean the side that is not The "back surface adhesive film" refers to a film used in close contact with the back surface of a semiconductor, and includes a film (semiconductor back surface protective film) for forming a protective film on the back surface (so-called back surface) of a semiconductor chip.

The back contact film has a linear transmittance of 20% or more, preferably 28% or more, more preferably 50% or more, and still more preferably 60% or more, for infrared rays having a wavelength of 1000 nm. When the linear transmittance is 20% or more, the back contact film has a high transmittance of laser light for forming the modified region. It is possible to form regions. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the back adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back adhesive film. is possible. In the present specification, the linear transmittance of the back adhesive film and the dicing tape-integrated back adhesive film can be measured using a known spectrophotometer.

An embodiment of the dicing tape-integrated back contact film of the present invention is described below. FIG. 1 is a schematic cross-sectional view showing one embodiment of the dicing tape-integrated back adhesive film. As shown in FIG. 1 , the dicing tape-integrated back adhesive film 1 includes a dicing tape 10 and a back adhesive film 20 laminated on the adhesive layer 12 of the dicing tape 10 . In the back contact film 1 integrated with the dicing tape shown in FIG. The dicing tape-integrated back contact film 1 is used in the singulation process in the process of obtaining semiconductor chips with back contact films in the manufacture of semiconductor devices. The dicing tape 10 in the dicing tape-integrated back adhesive film 1 has a laminated structure including a substrate 11 and an adhesive layer 12 . The back contact film 20 has a size similar to or larger than the workpiece so as to correspond to the semiconductor wafer, which is the workpiece to be bonded.

(adhesive layer)
The back contact film includes at least an adhesive layer having a sticking surface (for example, 21a in FIG. 1) to the back surface of the work. The adhesive layer may have thermosetting properties so that it can be adhered to the back surface of the work and protected by heat curing after being attached to the back surface of the work. If the adhesive layer is non-thermosetting, the adhesive layer adheres to and protects the back surface of the work by adhesion (wettability) at the interface due to pressure sensitivity or chemical bonding. It is possible. The adhesive layer may have a single layer structure or a multilayer structure.

The adhesive layer and the adhesive composition (resin composition) forming the adhesive layer preferably contain a thermoplastic resin. When the adhesive layer is thermosetting, the adhesive layer and the adhesive composition forming the adhesive layer may contain a thermosetting resin and a thermoplastic resin, or may react with a curing agent. It may also include thermoplastic resins having thermosetting functional groups that are capable of forming bonds through bonding. When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, the resin composition need not contain a thermosetting resin (epoxy resin, etc.).

The thermoplastic resin in the adhesive layer has, for example, a binder function. Examples of the thermoplastic resin include acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin. , polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as polyethylene terephthalate (PET) and polybutylene terephthalate (PBT), polyamideimide resin , fluororesins, and the like. Only one kind of the thermoplastic resin may be used, or two or more kinds thereof may be used. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint that it contains few ionic impurities and has high heat resistance.

The acrylic resin is a polymer containing structural units derived from acrylic monomers (monomer components having a (meth)acryloyl group in the molecule) as polymer structural units. The acrylic resin is preferably a polymer containing the largest proportion of structural units derived from (meth)acrylic acid ester. In addition, acrylic resin may use only 1 type, and may use 2 or more types. In the present specification, "(meth)acrylic" means "acrylic" and/or "methacrylic" (one or both of "acrylic" and "methacrylic"), and others are the same. .

Examples of the (meth)acrylic acid esters include hydrocarbon group-containing (meth)acrylic acid esters that may have an alkoxy group. Hydrocarbon group-containing (meth)acrylic acid esters include (meth)acrylic acid alkyl esters, (meth)acrylic acid cycloalkyl esters, (meth)acrylic acid aryl esters, and the like. Examples of the (meth)acrylic acid alkyl esters include (meth)acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (lauryl ester), tridecyl ester, tetradecyl ester , hexadecyl ester, octadecyl ester, eicosyl ester and the like. Examples of the (meth)acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth)acrylic acid. Examples of the (meth)acrylic acid aryl esters include phenyl esters and benzyl esters of (meth)acrylic acid. Examples of the hydrocarbon group-containing (meth)acrylic acid ester having an alkoxy group include those in which one or more hydrogen atoms in the hydrocarbon group in the above hydrocarbon group-containing (meth)acrylic acid ester are substituted with an alkoxy group, Examples thereof include 2-methoxymethyl ester, 2-methoxyethyl ester and 2-methoxybutyl ester of (meth)acrylic acid. The hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more.

The above-mentioned acrylic resin has a configuration derived from other monomer components copolymerizable with a hydrocarbon group-containing (meth) acrylic acid ester that may have an alkoxy group for the purpose of improving cohesive strength, heat resistance, etc. May contain units. Examples of other monomer components include carboxy group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile, and other functional group-containing monomers. A monomer etc. are mentioned. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid and the like. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl)methyl (meth)acrylate and the like. Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, sulfopropyl (meth)acrylate, (meth) ) acryloyloxynaphthalenesulfonic acid and the like. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethyl acryloyl phosphate and the like. Only one kind of the other monomer component may be used, or two or more kinds thereof may be used.

The acrylic resin that can be contained in the adhesive layer is appropriately selected from butyl acrylate, ethyl acrylate, acrylonitrile, and acrylic acid from the viewpoint of achieving both adhesiveness to the workpiece and good splittability during expansion of the adhesive layer. It is preferably a copolymer of selected monomers.

When the adhesive layer contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, and thermosetting resins. A polyimide resin etc. are mentioned. Only one type of the thermosetting resin may be used, or two or more types may be used. Epoxy resin is preferable as the thermosetting resin because it tends to contain less ionic impurities that may cause corrosion of the semiconductor chip. Phenol resin is preferable as a curing agent for epoxy resin.

Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, and biphenyl type epoxy resin. Epoxy resins, naphthalene type epoxy resins, fluorene type epoxy resins, phenol novolak type epoxy resins, cresol novolac type epoxy resins such as ortho cresol novolak type epoxy resins, trishydroxyphenylmethane type epoxy resins, tetraphenylolethane type epoxy resins, etc. Polyfunctional epoxy resins can be mentioned. Only one kind of the epoxy resin may be used, or two or more kinds thereof may be used. Among them, phenol novolak type epoxy resin, ortho-cresol novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylene epoxy resin, etc. A roll ethane type epoxy resin is preferred.

Phenolic resins that can act as curing agents for epoxy resins include, for example, novolak-type phenolic resins such as phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolak resins, and nonylphenol novolac resins. Examples of the phenol resin include resol-type phenol resin and polyoxystyrene such as polyparaoxystyrene. Only one type of the phenol resin may be used, or two or more types may be used.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenolic resin in the adhesive layer, the phenolic resin preferably contains 0.00 hydroxyl group per equivalent of the epoxy group in the epoxy resin component. It is contained in an amount of 5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

When the adhesive layer contains a thermosetting resin, the content of the thermosetting resin is 5 to 60% by mass with respect to the total mass of the adhesive layer from the viewpoint of properly curing the adhesive layer. It is preferably 10 to 50 mass %, more preferably 10 to 50 mass %.

When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in this thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth)acrylic acid ester as a structural unit having the largest mass ratio. As the hydrocarbon group-containing (meth)acrylic acid ester, for example, those exemplified as the hydrocarbon group-containing (meth)acrylic acid ester forming the acrylic resin as the thermoplastic resin that can be contained in the adhesive layer is mentioned. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include glycidyl group, carboxyl group, hydroxy group, isocyanate group and the like. Among them, a glycidyl group and a carboxy group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxy group-containing acrylic resin are particularly preferable. In addition, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin. things are mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol-based compound as the curing agent, and for example, the various phenolic resins described above can be used.

The adhesive layer preferably contains a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is included, the curing reaction of the resin component can be sufficiently advanced and the curing reaction rate can be increased in curing the adhesive layer. Examples of the thermosetting catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogen borane-based compounds. Examples of imidazole compounds include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl- 4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole Lithium trimellitate, 2,4-diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine, 2,4-diamino-6-[2′-undecylimidazolyl-(1 ')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6- [2′-Methylimidazolyl-(1′)]-ethyl-s-triazineisocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole and the like mentioned. Examples of triphenylphosphine compounds include triphenylphosphine, tributylphosphine, tri(p-methylphenyl)phosphine, tri(nonylphenyl)phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium, methyltriphenyl phosphonium chloride, methoxymethyltriphenylphosphonium, benzyltriphenylphosphonium chloride and the like. Triphenylphosphine-based compounds also include compounds having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, triphenylphosphinetriphenylborane and the like. Examples of amine compounds include monoethanolamine trifluoroborate and dicyandiamide. Trihalogen borane compounds include, for example, trichloroborane. The thermosetting catalyst may contain only one type, or may contain two or more types.

The adhesive layer may contain a filler. By including a filler, it is easy to adjust physical properties such as elastic modulus, yield point strength, and breaking elongation of the adhesive layer. Examples of fillers include inorganic fillers and organic fillers. Constituent materials of the inorganic filler include, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitride Examples include silicon, boron nitride, crystalline silica, amorphous silica, and the like. Further, examples of constituent materials of the inorganic filler include single metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon, graphite and the like. Examples of constituent materials of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. The above fillers may contain only one type, or may contain two or more types.

The filler may have various shapes such as spherical, needle-like, and flake-like. The average particle diameter of the filler is preferably 10-1000 nm, more preferably 20-700 nm, and more preferably 30-500 nm. That is, the adhesive layer preferably contains nanofillers. When a nano-filler having such a particle diameter is contained as a filler, the splitting property of the back adhesive film, which is to be broken into small pieces, is improved. Also, when the average particle size is small, the linear transmittance of infrared rays with a wavelength of 1000 nm tends to be high. The average particle size of the filler can be determined using, for example, a photometric particle size distribution meter (trade name “LA-910”, manufactured by HORIBA, Ltd.). When the adhesive layer contains a filler, the content of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and more preferably 20% by mass or more. The above content is preferably 60% by mass or less, more preferably 50% by mass or less, and more preferably 45% by mass or less. In addition, when the said content rate is small, there exists a tendency for the in-line transmittance to improve.

The adhesive layer may contain a coloring agent. Examples of the coloring agent in the adhesive layer include those exemplified as coloring agents that can be contained in the laser mark layer described later. From the viewpoint of ensuring high contrast between the laser marking location on the back adhesive film side of the laser mark layer and other locations and realizing good visibility of the marking information, the coloring agent is a black color. It is preferably an agent. Only one kind of the coloring agent may be used, or two or more kinds thereof may be used. In addition, from the viewpoint of achieving the above-described good visibility of information marked by laser marking, the content of the coloring agent in the adhesive layer is preferably 0.5% by mass or more, more preferably 1% by mass or more, and even more preferably. is 2% by mass or more. The above content is preferably 10% by mass or less, more preferably 8% by mass or less, and even more preferably 5% by mass or less.

The adhesive layer may contain other components as necessary. Examples of other components include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, metal hydroxides such as composite metal hydroxides, phosphazene compounds, antimony trioxide, Examples include antimony oxide and brominated epoxy resins. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane and the like. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydrous antimony oxide (eg "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate of a specific structure (eg, manufactured by Toagosei Co., Ltd. "IXE-100"), magnesium silicate (eg "Kyoward 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (eg "Kyoward 700" manufactured by Kyowa Chemical Industry Co., Ltd.), and the like. Compounds that can form complexes with metal ions can also be used as ion trapping agents. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Among these, triazole compounds are preferable from the viewpoint of the stability of the complex formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzotriazole, 2-(2-hydroxy- 5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3-t-butyl-5-methylphenyl )-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-5-t-octylphenyl)benzotriazole, 6-(2 -benzotriazolyl)-4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1- (1,2-dicarboxydiethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazol-1-yl)methyl}phenol , 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, 3-(2H-benzotriazol-2-yl)-5-(1,1-dimethylethyl)-4-hydroxy, octyl -3-[3-t-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-ethylhexyl-3-[3-t-butyl-4-hydroxy -5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-( 1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-t-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2- (2-hydroxy-5-t-octylphenyl)-benzotriazole, 2-(3-t-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3, 5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chloro-benzotriazole, 2-[2-hydroxy-3,5-di (1 ,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2′-methylenebis[6-(2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol ], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole, methyl-3-[3-(2H-benzotriazol-2-yl)-5- and t-butyl-4-hydroxyphenyl]propionate. Specific hydroxyl group-containing compounds such as quinol compounds, hydroxyanthraquinone compounds and polyphenol compounds can also be used as ion trapping agents. Specific examples of such hydroxyl group-containing compounds include 1,2-benzenediol, alizarin, anthralphine, tannin, gallic acid, methyl gallate, and pyrogallol. Only 1 type may be used for said other component, and 2 or more types may be used for it.

The tensile storage modulus (before curing) of the adhesive layer at 23° C. is not particularly limited, but is preferably 0.5 GPa or more, more preferably 0.75 GPa or more, and still more preferably 1 GPa or more. When the tensile storage elastic modulus is 0.5 GPa or more, it can be prevented from adhering to the carrier tape. The upper limit of the tensile storage modulus at 23°C is, for example, 20 GPa. The tensile storage modulus can be adjusted by the type and content of the resin component, the type and content of the filler, and the like.

The thickness of the adhesive layer is, for example, 2-200 μm, preferably 4-160 μm, more preferably 6-100 μm, still more preferably 10-80 μm.

The back contact film may have a single-layer structure composed of the adhesive layer, or may have a multilayer structure. The back contact film, which has a multilayer structure, has a laminated structure including, for example, the above adhesive layer and a laser mark layer to which imprinted information can be applied by laser marking. The back contact film having such a multilayer structure has a laminated structure in which the adhesive layer is heat-cured but the laser mark layer is not substantially heat-cured by heat treatment at 120° C. for 2 hours, By heat treatment at 120 ° C. for 2 hours, a thermosetting-less laminated structure in which both the adhesive layer and the laser mark layer are not substantially cured by radiation, while the adhesive layer is cured by irradiation, the above The laser mark layer can have a non-thermosetting laminated structure that is not substantially thermoset. In addition, in the back adhesive film, the layer which is not substantially thermoset by heat treatment at 120° C. for 2 hours includes an already cured thermosetting layer.

FIG. 2 shows an embodiment of the dicing tape-integrated back adhesive film of the present invention in the case where the back adhesive film has a multilayer structure including an adhesive layer and a laser marking layer. In the dicing tape-integrated back adhesive film 1 shown in FIG. is releasably adhered to. When the adhesive layer 21 and the laser mark layer 22 have the positional relationship shown in FIG. 2, the back adhesion film 20 can be adhered to the back surface of the work and, if necessary, heat-cured for use.

(laser mark layer)
When the back contact film has a multi-layer structure having an adhesive layer and a laser mark layer, laser marking is applied to the surface of the laser mark layer during the manufacturing process of the semiconductor device. In the dicing tape-integrated back adhesive film, the laser mark layer is preferably located on the dicing tape side in the back adhesive film and adheres to the dicing tape and its adhesive layer. Also, the laser mark layer and/or the adhesive layer may be a thermosetting layer having thermosetting properties or a non-thermosetting layer having no thermosetting properties. When the laser mark layer is non-thermosetting, it may be a thermosetting layer (a thermoset layer) in which the thermosetting component is thermoset. The laser mark layer is formed by curing a thermosetting resin composition layer formed from a resin composition forming the laser mark layer.

The laser mark layer and the resin composition forming the laser mark layer preferably contain a thermoplastic resin. When the laser mark layer is a thermosetting layer (that is, a thermosetting layer or a thermoset layer), the resin composition forming the laser mark layer or the laser mark layer is a thermosetting resin and a thermoplastic resin. or a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to form a bond.

The thermoplastic resin has, for example, a binder function in the laser mark layer, and examples of the thermoplastic resin include those exemplified as thermoplastic resins that can be contained in the adhesive layer. Only one kind of the thermoplastic resin may be used, or two or more kinds thereof may be used. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint that it contains few ionic impurities and has high heat resistance.

The acrylic resin that can be contained in the resin composition that forms the laser mark layer and the laser mark layer is selected from butyl acrylate, acrylic acid, and acrylic resin from the viewpoint of achieving both visibility of information engraved by laser marking and good splittability during expansion. It is preferably a copolymer of monomers appropriately selected from ethyl, acrylonitrile, and acrylic acid.

When a thermosetting resin is included together with a thermoplastic resin, examples of the thermosetting resin include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, thermosetting polyimide resins, and the like. be done. Only one type of the thermosetting resin may be used, or two or more types may be used. Epoxy resin is preferable as the thermosetting resin because it tends to contain less ionic impurities that may cause corrosion of the semiconductor chip. Phenol resin is preferable as a curing agent for epoxy resin.

Examples of the epoxy resin include those exemplified as the epoxy resin that the adhesive layer may contain. Only one kind of the epoxy resin may be used, or two or more kinds thereof may be used.

Phenolic resins that can act as curing agents for epoxy resins include those exemplified as phenolic resins that the adhesive layer can contain above. Only one type of the phenol resin may be used, or two or more types may be used.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenolic resin in the laser mark layer and the resin composition forming the laser mark layer, the phenolic resin is used per equivalent of the epoxy group in the epoxy resin component. The hydroxyl group in the phenolic resin is contained in an amount of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

When the laser mark layer and the resin composition forming the laser mark layer contain a thermosetting resin, the content of the thermosetting resin is added to the total mass of the laser mark layer or the resin composition forming the laser mark layer. 5 to 60% by mass, more preferably 10 to 50% by mass.

When the laser mark layer and the resin composition forming the laser mark layer contain a thermoplastic resin having a thermosetting functional group, the thermoplastic resin may be the above-mentioned thermosetting functional group-containing acrylic resin that the adhesive layer may contain. Examples of the resin include those exemplified. In addition, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin. Examples of the curing agent include those exemplified as cross-linking agents that can be contained in the radiation-curable adhesive for forming the adhesive layer described later. are mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol-based compound as the curing agent, and for example, the various phenolic resins described above can be used.

The laser mark layer and the resin composition forming the laser mark layer preferably contain a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is included, the curing reaction of the resin component can be sufficiently advanced and the curing reaction rate can be increased in curing the resin composition. Examples of the thermosetting catalyst include those exemplified as the thermosetting catalyst that the adhesive layer may contain. The thermosetting catalyst may contain only one type, or may contain two or more types.

The laser mark layer and the resin composition forming the laser mark layer may contain a filler. By including a filler, it is easy to adjust physical properties such as elastic modulus, yield point strength, and breaking elongation of the laser mark layer. Examples of the filler include those exemplified as the filler that the adhesive layer may contain. The above fillers may contain only one type, or may contain two or more types.

The filler may have various shapes such as spherical, needle-like, and flake-like. The average particle diameter of the filler is preferably 10-1000 nm, more preferably 20-700 nm, and more preferably 30-500 nm. That is, the laser mark layer and the resin composition forming the laser mark layer preferably contain a nanofiller. When a nano-filler having such a particle size is contained as a filler, the back adhesive film that is to be broken into small pieces is more excellent in splitting and splitting properties. Also, when the average particle size is small, the linear transmittance of infrared rays with a wavelength of 1000 nm tends to be high. When the laser mark layer or the resin composition forming the laser mark layer contains a filler, the content of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and more preferably 20% by mass or more. be. The above content is preferably 60% by mass or less, more preferably 50% by mass or less, and more preferably 45% by mass or less. In addition, when the said content rate is small, there exists a tendency for the in-line transmittance to improve.

The laser mark layer and the resin composition forming the laser mark layer may contain a colorant. When a coloring agent is contained, excellent marking properties and appearance properties can be exhibited, and various types of information such as character information and graphic information can be imparted by laser marking. Further, by appropriately selecting the color of the coloring agent, it is possible to make the information provided by marking (character information, graphic information, etc.) highly visible. Furthermore, by selecting a coloring agent, it becomes possible to color-code by product.

The coloring agent may be a pigment or a dye. Examples of coloring agents include black coloring agents, cyan coloring agents, magenta coloring agents, and yellow coloring agents. A black colorant is preferable from the viewpoint of engraving information on the laser mark layer by laser marking and having excellent visibility of the information. The coloring agent may contain only one kind, or may contain two or more kinds.

Black colorants include, for example, carbon black, graphite (graphite), copper oxide, manganese dioxide, azo pigments such as azomethine azo black, aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite, magnetite, Examples include chromium oxide, iron oxide, molybdenum disulfide, composite oxide-based black dyes, anthraquinone-based organic black dyes, and azo-based organic black dyes. Examples of carbon black include furnace black, channel black, acetylene black, thermal black, lamp black and the like. As a black colorant, C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70; C.I. I. Direct Black 17, 19, 22, 32, 38, 51, 71; C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154; C.I. I. Disperse Black 1, 3, 10, 24; C.I. I. Pigment Black 1, Pigment Black 7 and the like are also included. Black pigments such as metal oxides containing metal elements such as Co, Cr, Cu, Mn, Ru, Fe, Ni, Sn, Ti, Ag, and Al, and metal nitrogen compounds are also included.

Examples of cyan colorants include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; C.I. I. Acid Blue 6, 45; C.I. I. Pigment Blue 1, 2, 3, 15, 15:1, 15:2, 15:3, 15:4, 15:5, 15:6, 16, 17, 17:1, 18, 22, 25, 56, 60, 63, 65, 66; C.I. I. Bat Blue 4; 60, C.I. I. Pigment Green 7 and the like.

Examples of magenta colorants include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 49, 52, 58, 63, 81, 82, 83, 84, 100, 109, 111, 121, 122; C.I. I. disperse thread 9; C.I. I. Solvent Violet 8, 13, 14, 21, 27; C.I. I. Disperse Violet 1; C.I. I. Basic red 1, 2, 9, 12, 13, 14, 15, 17, 18, 22, 23, 24, 27, 29, 32, 34, 35, 36, 37, 38, 39, 40; C.I. I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 25, 26, 27, 28 and the like. Examples of magenta colorants include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48:2, 48:3, 48:4, 49, 49:1, 50, 51, 52, 52:2, 53:1, 54, 55, 56, 57:1, 58, 60, 60:1, 63, 63:1, 63:2, 64, 64:1, 67, 68, 81, 83, 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146, 147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178, 179, 184, 185 , 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; I. Pigment Violet 3, 9, 19, 23, 31, 32, 33, 36, 38, 43, 50; C.I. I. Batred 1, 2, 10, 13, 15, 23, 29, 35 and the like.

Examples of yellow colorants include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162; I. Pigment Orange 31, 43; C.I. I. Pigment Yellow 1, 2, 3, 4, 5, 6, 7, 10, 11, 12, 13, 14, 15, 16, 17, 23, 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75, 81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139 , 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; I. Bat Yellow 1, 3, 20 and the like.

Other pigments include, for example, indium tin oxide, antimony tin oxide, zinc oxide, white lead, lithopone, titanium oxide, chromium oxide, iron oxide, aluminum oxide, precipitated barium sulfate, barite powder, red lead, oxide Iron red, yellow lead, zinc yellow (zinc yellow 1, zinc yellow 2), ultramarine blue, Prussian blue (potash ferrocyanide), zircon gray, praseodymium yellow, chrome titanium yellow, chrome green, peacock, victoria Green, Prussian Blue, Vanadium Zirconium Blue, Chrome Tin Pink, Ceramic Red, Salmon Pink, Titanium Black, Tungsten Compounds, Metal Borides and the like.

From the viewpoint of realizing high visibility of information engraved on the laser mark layer by laser marking, the content of the coloring agent is, for example, the total mass of the laser mark layer or the resin composition forming the laser mark layer. It is 0.5% by mass or more, preferably 1% by mass or more, more preferably 2% by mass or more. The above content is, for example, 10% by mass or less, preferably 8% by mass or less, and more preferably 5% by mass or less.

The laser mark layer and the resin composition forming the laser mark layer may contain other components as necessary. Examples of the other components include flame retardants, silane coupling agents, ion trapping agents, and the like, which are exemplified as other components that the adhesive layer may contain. Only one kind of the other components may be used, or two or more kinds thereof may be used.

The tensile storage modulus (after curing) of the laser mark layer at 23° C. is not particularly limited, but is preferably 0.5 GPa or more, more preferably 0.75 GPa or more, and still more preferably 1 GPa or more. When the tensile storage elastic modulus is 0.5 GPa or more, it can be prevented from adhering to the carrier tape. Also, the back surface of the work can be more strongly protected after heat curing. The upper limit of the tensile storage modulus at 23°C is, for example, 20 GPa. The tensile storage modulus can be adjusted by the type and content of the resin component, the type and content of the filler, and the like.

When the back contact film has a multilayer structure having an adhesive layer and a laser marking layer, the ratio of the thickness of the laser marking layer to the thickness of the adhesive layer is preferably 1 or more, more preferably 1.5 or more. More preferably, it is 2 or more. The above ratio is, for example, 8 or less.

When a laser mark layer is provided, the thickness of the laser mark layer is, for example, 2-180 μm, preferably 4-160 μm.

The thickness of the back contact film is, for example, 2 to 200 μm, preferably 5 to 50 μm, more preferably 7 to 45 μm, still more preferably 10 to 40 μm. When the thickness is 2 μm or more, the back surface of the work can be more strongly protected. When the thickness is 200 μm or less, the workpiece after the back contact can be made thinner.

The content of the coloring agent in the back contact film is not particularly limited, but is preferably 0.5% by mass or more, more preferably 1% by mass or more, and still more preferably 2% by mass or more. The above content is preferably 10% by mass or less, more preferably 8% by mass or less, and even more preferably 5% by mass or less. When the content is 10% by mass or less, a back contact film having a linear transmittance of 20% or more for infrared rays with a wavelength of 1000 nm can be easily produced.

The arithmetic mean surface roughness of the back adhesion film surface (the side opposite to the side in close contact with the dicing tape, that is, the surface to which the semiconductor wafer is attached) is preferably 100 nm or less, more preferably 80 nm or less, and further It is preferably 60 nm or less. When the arithmetic mean surface roughness of the back adhesion film surface is 100 nm or less, scattering of the laser light irradiated to form the modified region is less likely to occur. It is possible to efficiently form a modified region on a semiconductor wafer by irradiating a laser beam from the semiconductor wafer. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the back adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back adhesive film. becomes easier.

The peeling force of the back adhesive film to the pressure-sensitive adhesive layer (peeling angle of 180°, peeling speed of 300 mm/min, after curing) is not particularly limited, but is preferably 10 N/20 mm or less, more preferably 5 N/20 mm or less. be. When the peeling force is 10 N/20 mm or less, the chip can be easily picked up from the dicing tape during pickup. The peel force is preferably 0.02 N/20 mm or more, more preferably 0.05 N/20 mm or more. When the peeling force is 0.02 N/20 mm or more, it becomes difficult to peel the cured back surface adhesive film from the dicing tape during singulation.

(Base material)
The base material in the dicing tape is an element that functions as a support in the dicing tape or the dicing tape-integrated back adhesive film. Substrates include, for example, plastic substrates (especially plastic films). The substrate may be a single layer or a laminate of the same or different substrates.

Examples of the resin constituting the plastic substrate include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, and homopolypropylene. , polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene- Polyolefin resins such as butene copolymers and ethylene-hexene copolymers; polyurethanes; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT); polycarbonates; polyimides; polyamide such as aramid and wholly aromatic polyamide; polyphenyl sulfide; fluorine resin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; By ensuring good heat shrinkability in the base material, the distance between chips is maintained by using dicing tape or partial heat shrinkage of the base material in the expanding process to widen the distance between semiconductor chips after singulation. From the viewpoint of ease of application, the substrate preferably contains an ethylene-vinyl acetate copolymer or polyvinyl chloride as a main component. In addition, let the main component of a base material be a component which occupies the largest mass ratio in a structural component. Only one kind of the above resin may be used, or two or more kinds thereof may be used. When the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer as described later, the substrate preferably has radiation transparency.

When the substrate is a plastic film, the plastic film may be non-oriented, or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film is heat shrinkable in at least one direction. When the dicing tape has heat shrinkability, it becomes possible to heat-shrink the outer peripheral portion of the semiconductor wafer. Since it can be fixed, the semiconductor chip can be easily picked up. In order for the substrate and the dicing tape to have isotropic heat shrinkability, the substrate is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching an unstretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The base material and the dicing tape preferably have a thermal shrinkage rate of 1% or more, more preferably 3% or more, and still more preferably 3% or more in a heat treatment test performed at a heating temperature of 100 ° C. and a heating time of 60 seconds. 5% or more, particularly preferably 7% or more. It is preferable that the thermal shrinkage rate is the thermal shrinkage rate in at least one of the MD direction and the TD direction.

The surface of the adhesive layer side of the base material may be subjected to corona discharge treatment, plasma treatment, sand mat processing, ozone exposure treatment, flame exposure treatment, high voltage shock treatment, etc. for the purpose of enhancing adhesion and retention with the adhesive layer. Physical treatments such as exposure treatments and ionizing radiation treatments; chemical treatments such as chromic acid treatments; In addition, in order to impart antistatic properties, a conductive deposition layer containing metals, alloys, oxides thereof, or the like may be provided on the substrate surface. The surface treatment for enhancing adhesion is preferably applied to the entire surface of the base material on the pressure-sensitive adhesive layer side.

The thickness of the substrate is preferably 40 μm or more, more preferably 50 μm or more, and still more preferably 50 μm or more, from the viewpoint of ensuring strength for the substrate to function as a support in the dicing tape and the dicing tape-integrated back adhesive film. is at least 55 μm, particularly preferably at least 60 μm. From the viewpoint of achieving appropriate flexibility in the dicing tape and the dicing tape-integrated back adhesion film, the thickness of the substrate is preferably 200 μm or less, more preferably 180 μm or less, and even more preferably 150 μm or less. be.

The arithmetic mean surface roughness of the back surface of the substrate (the side opposite to the side on which the pressure-sensitive adhesive layer is formed) is preferably 100 nm or less, more preferably 90 nm or less, and even more preferably 80 nm or less. If the arithmetic mean surface roughness of the surface of the semiconductor back adhesion film is 100 nm or less, scattering of the laser light irradiated to form the modified region is less likely to occur. By irradiating laser light from the side, it is possible to efficiently form a modified region in the semiconductor wafer. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the back adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back adhesive film. becomes easier.

(Adhesive layer)
The adhesive layer in the dicing tape is an adhesive layer that can intentionally reduce the adhesive force (adhesive force reduction type adhesive layer) by external action during the use process of the dicing tape integrated back adhesive film. It may be an adhesive layer (adhesive force non-reducing type adhesive layer) whose adhesive force is hardly or not reduced by an external action during the use process of the dicing tape-integrated back adhesive film. It can be appropriately selected according to the method, conditions, etc., for singulating the workpiece to be singulated using the dicing tape-integrated back contact film. The pressure-sensitive adhesive layer may have a single layer structure or a multilayer structure.

When the adhesive layer is an adhesive layer that can reduce adhesive strength, the adhesive layer exhibits relatively high adhesive strength and relatively low adhesive strength during the manufacturing process and use process of the back adhesive film with integrated dicing tape. It is possible to properly use the state indicating the force. For example, when bonding the back adhesive film to the adhesive layer of the dicing tape in the manufacturing process of the back adhesive film integrated with the dicing tape, or when the back adhesive film integrated with the dicing tape is used in the singulation process, the adhesive layer While it is possible to suppress and prevent the lifting of the back adhesion film from the adhesive layer by utilizing the state in which the dicing tape exhibits relatively high adhesive strength, after that, the dicing tape integrated back adhesion film from the semiconductor In the pick-up process for picking up the chip, the pick-up can be easily performed by reducing the adhesive strength of the adhesive layer.

Examples of the adhesive that forms such an adhesive force-reducing adhesive layer include a radiation-curable adhesive and a heat-foamable adhesive. As the adhesive for forming the adhesive force-reducing adhesive layer, one kind of adhesive may be used, or two or more kinds of adhesives may be used.

As the radiation-curable adhesive, for example, an adhesive that is cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used. Adhesives (ultraviolet curable adhesives) can be particularly preferably used.

As the radiation-curable adhesive, for example, an additive containing a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond type radiation curable adhesives.

The acrylic polymer is a polymer containing structural units derived from acrylic monomers (monomer components having a (meth)acryloyl group in the molecule) as polymer structural units. The above acrylic polymer is preferably a polymer containing the largest proportion of constituent units derived from (meth)acrylic acid ester in terms of mass ratio. In addition, acrylic polymer may use only 1 type, and may use 2 or more types.

Examples of the (meth)acrylic acid esters include hydrocarbon group-containing (meth)acrylic acid esters that may have an alkoxy group. Hydrocarbon group-containing (meth)acrylic acid esters which may have an alkoxy group include those exemplified as structural units of the acrylic resin that the adhesive layer may contain. The hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more. As the hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group, 2-ethylhexyl acrylate and lauryl acrylate are preferable. In order to appropriately express the basic properties such as adhesiveness of the (meth)acrylic acid ester containing a hydrocarbon group which may have an alkoxy group in the adhesive layer, all the monomer components for forming the acrylic polymer , the ratio of the hydrocarbon group-containing (meth)acrylic acid ester which may have an alkoxy group is preferably 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer is derived from other monomer components copolymerizable with the hydrocarbon group-containing (meth)acrylic acid ester that may have an alkoxy group for the purpose of improving cohesive strength, heat resistance, etc. It may contain a structural unit that Examples of the above other monomer components include other monomer components exemplified as structural units of the acrylic resin that the adhesive layer may contain. Only one kind of the other monomer component may be used, or two or more kinds thereof may be used. In order to appropriately express the basic properties such as adhesiveness of the (meth)acrylic acid ester containing a hydrocarbon group which may have an alkoxy group in the adhesive layer, all the monomer components for forming the acrylic polymer , the total ratio of the other monomer components is preferably 60% by mass or less, more preferably 40% by mass or less.

The acrylic polymer may contain a structural unit derived from a polyfunctional monomer copolymerizable with the monomer component forming the acrylic polymer in order to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, penta Erythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (meth)acrylate (e.g. polyglycidyl (meth)acrylate), polyester Examples thereof include monomers having a (meth)acryloyl group and other reactive functional groups in the molecule such as (meth)acrylate and urethane (meth)acrylate. Only one kind of the polyfunctional monomer may be used, or two or more kinds thereof may be used. In order to appropriately express the basic properties such as adhesiveness of the (meth)acrylic acid ester containing a hydrocarbon group which may have an alkoxy group in the adhesive layer, all the monomer components for forming the acrylic polymer is preferably 40% by mass or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing raw material monomers for forming it. Polymerization techniques include, for example, solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. The mass average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000. When the weight average molecular weight is 100,000 or more, the amount of low-molecular-weight substances in the pressure-sensitive adhesive layer tends to be small, and contamination of the back adhesive film, semiconductor wafer, and the like can be further suppressed.

The pressure-sensitive adhesive layer or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer may contain a cross-linking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked to further reduce low-molecular-weight substances in the pressure-sensitive adhesive layer. Also, the mass average molecular weight of the acrylic polymer can be increased. Examples of the cross-linking agent include polyisocyanate compounds, epoxy compounds, polyol compounds (such as polyphenol compounds), aziridine compounds, and melamine compounds. When a cross-linking agent is used, the amount used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta ( meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate and the like. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a molecular weight of about 100 to 30,000 are preferred. The content of the radiation-polymerizable monomer component and oligomer component in the radiation-curable adhesive that forms the adhesive layer is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass, with respect to 100 parts by mass of the base polymer. It is about a part by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, one disclosed in JP-A-60-196956 may be used.

As the radiation-curable pressure-sensitive adhesive, an internal radiation-curable adhesive containing a base polymer having a radiation-polymerizable carbon-carbon double bond or other functional group in the polymer side chain, in the polymer main chain, or at the polymer main chain end. Also included are adhesives. The use of such an internal radiation-curable adhesive tends to suppress unintended changes in adhesive properties over time due to migration of low-molecular-weight components within the formed adhesive layer.

An acrylic polymer is preferable as the base polymer contained in the internal radiation-curable pressure-sensitive adhesive. As a method for introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer component having a first functional group is polymerized (copolymerized) to obtain an acrylic polymer. After that, a compound having a second functional group capable of reacting with the first functional group and a radiation polymerizable carbon-carbon double bond is added to an acrylic polymer while maintaining the radiation polymerizability of the carbon-carbon double bond. Condensation reaction or addition reaction method can be used.

Combinations of the first functional group and the second functional group include, for example, a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, An isocyanate group, a hydroxy group, and the like can be mentioned. Among these, a combination of a hydroxy group and an isocyanate group, and a combination of an isocyanate group and a hydroxy group are preferred from the viewpoint of ease of reaction tracking. Among them, it is technically difficult to produce a polymer having a highly reactive isocyanate group, and on the other hand, from the viewpoint of ease of production and availability of an acrylic polymer having a hydroxy group, the first functional group is A preferred combination is a hydroxy group and the second functional group is an isocyanate group. Compounds having an isocyanate group and a radiation-polymerizable carbon-carbon double bond, that is, radiation-polymerizable unsaturated functional group-containing isocyanate compounds include, for example, methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α,α-dimethylbenzyl isocyanate and the like. Further, as the acrylic polymer having a hydroxy group, those containing structural units derived from the above-mentioned hydroxy group-containing monomers and ether compounds such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether. is mentioned.

The radiation-curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketone, acylphosphinate, acylphosphonate and the like. Examples of the α-ketol compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl-2-hydroxy propiophenone, 1-hydroxycyclohexylphenyl ketone and the like. Examples of the acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2 -Morpholinopropane-1 and the like. Examples of the benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compound include benzyl dimethyl ketal. Examples of the aromatic sulfonyl chloride compounds include 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of the benzophenone-based compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. thioxanthone and the like. The content of the photopolymerization initiator in the radiation-curable adhesive is, for example, 0.05 to 20 parts by weight with respect to 100 parts by weight of the base polymer.

The heat-expandable pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands when heated. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic foaming agent include alkane hydrochlorides such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate; and paratoluene. Hydrazine compounds such as sulfonyl hydrazide, diphenylsulfone-3,3'-disulfonyl hydrazide, 4,4'-oxybis(benzenesulfonylhydrazide), allylbis(sulfonylhydrazide); p-toluylenesulfonyl semicarbazide, 4,4'- Semicarbazide compounds such as oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N,N'-dinitrosopentamethylenetetramine, N,N'-dimethyl- Examples include N-nitroso compounds such as N,N'-dinitrosoterephthalamide. Examples of the heat-expandable microspheres include microspheres having a structure in which a substance that is easily gasified and expanded by heating is encapsulated in the shell. Isobutane, propane, pentane, and the like are examples of substances that easily gasify and expand when heated. Thermally expandable microspheres can be produced by encapsulating a substance that is easily gasified and expanded by heating in a shell-forming substance by a coacervation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal melting properties and a substance capable of bursting due to the action of thermal expansion of the enclosed substance can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone, and the like.

Examples of the non-reducing adhesive layer include a pressure-sensitive adhesive layer. In the pressure-sensitive adhesive layer, an adhesive layer formed from the radiation-curable adhesive described above with respect to the adhesive force-reducing adhesive layer is cured by irradiation in advance and has a certain adhesive force. An adhesive layer is included. As the adhesive that forms the non-adhesion-reducing adhesive layer, one kind of adhesive may be used, or two or more kinds of adhesives may be used. Further, the entire adhesive layer may be a non-adhesive force-reducing adhesive layer, or a part thereof may be a non-adhesive force-reducing adhesive layer. For example, when the pressure-sensitive adhesive layer has a single-layer structure, the entire pressure-sensitive adhesive layer may be a non-adhesive force-reducing pressure-sensitive adhesive layer, or a specific portion of the pressure-sensitive adhesive layer (for example, a ring frame to be attached) A region outside the central region) is a non-adhesive strength-reducing adhesive layer, and the other portion (for example, a central region to be adhered to a semiconductor wafer) is an adhesive force-reducing adhesive. It may be an agent layer. Further, when the adhesive layer has a laminated structure, all the adhesive layers in the laminated structure may be non-adhesive pressure-reducing adhesive layers, or some of the adhesive layers in the laminated structure may have non-adhesive strength. It may be a reduced pressure-sensitive adhesive layer.

The pressure-sensitive adhesive layer (irradiated radiation-curable pressure-sensitive adhesive layer) in which the pressure-sensitive adhesive layer (non-irradiated radiation-curable pressure-sensitive adhesive layer) formed from a radiation-curable pressure-sensitive adhesive is cured in advance by irradiation with radiation Even if the adhesive strength is reduced by irradiation, it exhibits adhesiveness due to the contained polymer component, and it is possible to exert the minimum necessary adhesive strength on the adhesive layer of the dicing tape in the singulation process. be. When a radiation-cured pressure-sensitive adhesive layer that has been exposed to radiation is used, the entire pressure-sensitive adhesive layer may be the irradiated radiation-curing pressure-sensitive adhesive layer in the surface spreading direction of the pressure-sensitive adhesive layer, and a part of the pressure-sensitive adhesive layer may be It may be a radiation-curable pressure-sensitive adhesive layer that has been exposed to radiation, and the other portion may be a radiation-curable pressure-sensitive adhesive layer that has not been exposed to radiation. In this specification, the term "radiation-curable pressure-sensitive adhesive layer" refers to a pressure-sensitive adhesive layer formed from a radiation-curable pressure-sensitive adhesive. It includes both the radiation-cured radiation-curable pressure-sensitive adhesive layer after the agent layer has been cured by irradiation.

As the pressure-sensitive adhesive for forming the pressure-sensitive pressure-sensitive adhesive layer, a known or commonly used pressure-sensitive pressure-sensitive adhesive can be used, and an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive having an acrylic polymer as a base polymer is preferably used. can be done. When the pressure-sensitive adhesive layer contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer may be a polymer containing the structural unit derived from (meth)acrylic acid ester as the largest structural unit in terms of mass ratio. preferable. As the acrylic polymer, for example, the acrylic polymer described as the acrylic polymer that can be contained in the additive-type radiation-curable pressure-sensitive adhesive can be employed.

The pressure-sensitive adhesive layer or the pressure-sensitive adhesive that forms the pressure-sensitive adhesive layer includes, in addition to the components described above, known or commonly used pressure-sensitive adhesive layers such as cross-linking accelerators, tackifiers, anti-aging agents, and coloring agents (pigments, dyes, etc.). Additives used in may be blended. Examples of the coloring agent include compounds that are colored by exposure to radiation. When a compound that is colored by irradiation is contained, only the irradiated portion can be colored. The compound that is colored by exposure to radiation is a compound that is colorless or light-colored before exposure to radiation and becomes colored by exposure to radiation, and examples thereof include leuco dyes. The amount of the compound that is colored by exposure to radiation is not particularly limited and can be appropriately selected.

The thickness of the pressure-sensitive adhesive layer is not particularly limited. From the viewpoint of balancing, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm.

The dicing tape-integrated back adhesion film of the present invention (excluding the separator if it has a separator) preferably has a linear transmittance B of infrared rays with a wavelength of 1000 nm of 20% or more, more preferably 35% or more, and still more preferably. is 50% or more. When the linear transmittance B is 20% or more, the dicing tape-integrated back contact film has a high transmittance of the laser light irradiated to form the modified region. It becomes possible to form a modified region on a semiconductor wafer by irradiating laser light from the tape side. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the back adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back adhesive film. becomes easier.

The dicing tape-integrated back adhesion film of the present invention (excluding the separator if it has a separator) preferably has a total light transmittance A of infrared rays with a wavelength of 1000 nm of 60% or more, more preferably 70% or more, and further Preferably it is 80% or more. The total light transmittance A can be measured using a known spectrophotometer.

The dicing tape-integrated back adhesion film of the present invention (excluding the separator if it has a separator) has a ratio of the total light transmittance A and the linear transmittance B of infrared rays with a wavelength of 1000 nm [total light transmittance A (%) / linear Transmittance B (%)] is preferably 1.0 to 4.5, more preferably 1.0 to 3.5, still more preferably 1.0 to 2.0. When the above ratio is within the above range, the dicing tape-integrated back adhesion film tends to selectively transmit the laser light irradiated to form the modified region, so after sticking to the back adhesion film , it becomes easier to form a modified region on a semiconductor wafer by irradiating a laser beam from the dicing tape side. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the back adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back adhesive film. becomes easier.

The haze value of the dicing tape-integrated back adhesive film of the present invention (excluding the separator if it has a separator) is preferably 80% or less, more preferably 70% or less, and still more preferably 50% or less. When the haze value is 80% or less, the dicing tape-integrated back adhesion film is less likely to scatter the laser light irradiated to form the modified region. It is possible to efficiently form a modified region on a semiconductor wafer by irradiating a laser beam from the semiconductor wafer. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the back adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back adhesive film. becomes easier. The haze value can be measured according to JIS K7361-1 (1997).

In the dicing tape-integrated back adhesion film of the present invention, both the arithmetic mean surface roughness of the substrate back surface and the back adhesion film surface are preferably 100 nm or less, more preferably 80 nm or less, and still more preferably 60 nm or less. be. When the arithmetic mean surface roughness is 100 nm or less, the dicing tape-integrated semiconductor back contact film is less likely to scatter the laser light irradiated to form the modified region. It is possible to efficiently form a modified region on a semiconductor wafer by irradiating laser light from the dicing tape side. Therefore, it is not necessary to form a modified region on the semiconductor wafer before attaching it to the back adhesive film, and the semiconductor wafer can be singulated without causing chipping of the semiconductor chips during attachment or peeling from the back adhesive film. becomes easier.

In the dicing tape-integrated back adhesive film of the present invention, the arithmetic mean surface roughness of the substrate surface (the surface on which the pressure-sensitive adhesive layer is formed in FIGS. 1 and 2) is not particularly limited, and is, for example, 100 nm or more. may be In this case, it is preferable that the recesses on the substrate surface are filled with the pressure-sensitive adhesive layer. When the concave portions of the substrate surface are filled with the adhesive layer, irregular reflection of the laser light by the concave portions can be suppressed, and irradiation of the laser light from the dicing tape side more efficiently forms the modified region on the semiconductor wafer. can be formed. The surface having an arithmetic mean surface roughness of 100 nm or more includes an embossed surface.

The thickness of the dicing tape-integrated back contact film of the present invention (excluding the separator if it has a separator) is, for example, 70 to 200 μm, preferably 80 to 170 μm, more preferably 90 to 150 μm.

The dicing tape-integrated back adhesion film of the present invention may have a separator on the back adhesion film surface. Specifically, each dicing tape-integrated back contact film may be in the form of a sheet having a separator, or a long separator having a plurality of dicing tape-integrated back contact films on it. and the separator may be wound into a roll. The separator is an element for covering and protecting the surface of the back adhesive film, and is peeled off from the sheet when using the dicing tape-integrated back adhesive film of the present invention. Examples of the separator include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, plastic film and paper surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent.

The thickness of the separator is, for example, 10-200 μm, preferably 15-150 μm, more preferably 20-100 μm. When the thickness is 10 μm or more, the separator is less likely to break due to cuts during processing of the separator. When the thickness is 200 μm or less, the dicing tape-integrated back contact film can be easily peeled off from the separator when it is attached to the substrate and frame.

[Manufacturing method of dicing tape-integrated back adhesion film]
The dicing tape-integrated back adhesion film 1, which is one embodiment of the dicing tape-integrated back adhesion film of the present invention, is produced, for example, as follows.

The dicing tape 10 of the dicing tape-integrated back adhesive film 1 shown in FIGS. 1 and 2 can be produced by providing an adhesive layer 12 on a prepared substrate 11 . For example, the base material 11 made of resin can be obtained by forming a film by a known or commonly used film forming method. Examples of the film-forming method include a calendar film-forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like. The substrate 11 is subjected to surface treatment as necessary. In the formation of the adhesive layer 12, for example, after preparing an adhesive composition (adhesive) for forming an adhesive layer, first, the composition is applied on the substrate 11 or a separator to form an adhesive composition. Form a layer. Examples of methods for applying the pressure-sensitive adhesive composition include roll coating, screen coating, gravure coating, and the like. Next, the pressure-sensitive adhesive composition layer is heated to remove the solvent, if necessary, and to cause a cross-linking reaction, if necessary. The heating temperature is, for example, 80 to 150° C., and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 12 is formed on the separator, the adhesive layer 12 with the separator is attached to the substrate 11 . As a result, the dicing tape 10 having a laminated structure of the substrate 11 and the adhesive layer 12 is produced.

For the adhesive layer 21, first, a composition (adhesive composition) for forming the adhesive layer 21 containing resin, filler, curing catalyst, solvent, and the like is prepared. Next, after coating the adhesive composition on the separator to form a coating film, the coating film is solidified by desolvation, curing, or the like, if necessary, to form the adhesive layer 21 . The coating method is not particularly limited, and examples thereof include known or commonly used coating methods such as roll coating, screen coating and gravure coating. The desolvation conditions are, for example, a temperature of 70 to 160° C. and a time of 1 to 5 minutes.

As shown in FIG. 2, when the back contact film 20 has a laminated structure including an adhesive layer 21 and a laser mark layer 22, the adhesive layer 21 and the laser mark layer 22 are produced separately. The adhesive layer 21 can be produced in the same manner as described above. On the other hand, the laser mark layer 22 is formed by coating the resin composition for forming the laser mark layer 22 on a separator to form a resin composition layer, and then removing the solvent and curing by heating to solidify the resin composition layer. It can be made by In producing the laser mark layer 22, the heating temperature is, for example, 90 to 160° C., and the heating time is, for example, 2 to 4 minutes. As described above, the adhesive layer 21 and the laser mark layer 22 can be produced in a form in which each is accompanied by a separator. Then, the exposed surfaces of the adhesive layer 21 and the laser mark layer 22 are adhered to each other to produce the back contact film 20 having a laminate structure of the adhesive layer 21 and the laser mark layer 22 .

Next, the rear adhesive film 20 (or the laser mark layer 22 when the laser mark layer 22 is provided) obtained above is attached to the adhesive layer 12 side of the dicing tape 10 . The bonding temperature is, for example, 30 to 50° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm. When the pressure-sensitive adhesive layer 12 is the above-described radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays before the bonding, or after the bonding, the substrate 11 may be exposed to radiation. The pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side. Alternatively, such radiation irradiation may not be performed in the manufacturing process of the dicing tape-integrated back adhesive film 1 (in this case, the adhesive layer 12 is cured by radiation during the use process of the dicing tape-integrated back adhesive film 1. Is possible). When the adhesive layer 12 is of an ultraviolet curing type, the amount of ultraviolet irradiation for curing the adhesive layer 12 is, for example, 50 to 500 mJ/cm ² . In the dicing tape-integrated back adhesive film 1, the area (irradiated area R) where irradiation is performed as a measure to reduce the adhesive strength of the adhesive layer 12 is, for example, as shown in FIGS. 20 is an area within the bonding area excluding its peripheral edge.

As described above, for example, the dicing tape-integrated back contact film 1 shown in FIGS. 1 and 2 can be produced.

[Method for manufacturing a semiconductor device]
A semiconductor device can be manufactured using the dicing tape-integrated back contact film of the present invention. Specifically, the step of attaching the back surface of a semiconductor wafer to the back surface adhesive film side (especially the adhesive layer side) of the dicing tape-integrated back surface adhesive film of the present invention (sticking step), and the division of the semiconductor wafer by laser light irradiation. A step of forming a modified region along the line (laser light irradiation step), and expanding the dicing tape in the dicing tape-integrated back adhesion film of the present invention under relatively low temperature conditions to form a semiconductor wafer and a back surface. A manufacturing method including a step of cutting the adhesive film along the planned dividing line to obtain a semiconductor chip with a back adhesive film (dividing step), and a step of picking up the semiconductor chip with the back adhesive film (pick-up step). Thus, a semiconductor device can be manufactured. 3 to 7 show steps in the method of manufacturing a semiconductor device using the dicing tape-integrated back contact film 1 shown in FIG. Alternatively, the dicing tape-integrated back contact film 1 shown in FIG. 1 may be used.

The method for manufacturing a semiconductor device may include a step of thinning the semiconductor wafer (wafer thinning step) before the bonding step. In the wafer thinning process, as shown in FIGS. 3A and 3B, the semiconductor wafer W is held by a wafer processing tape (surface protective film) T1, and the semiconductor wafer W is thinned to a predetermined thickness. is thinned by grinding from the back surface Wa. Grinding can be performed using a grinding device equipped with a grinding wheel.

(Affixing process)
In the attaching step, for example, as shown in FIG. 4A, the semiconductor wafer 30 ground in the wafer thinning step is held by a wafer processing tape T1, and the dicing tape-integrated back contact film 1 is attached to the wafer processing tape T1. is attached to the back adhesion film 20 side (particularly, the adhesive layer 21 side). The surface of the semiconductor wafer 30 is provided with bumps (not shown) for flip-chip mounting. Since the modified region can be formed later by using the dicing tape-integrated back adhesion film of the present invention, the modified region need not be formed in the semiconductor wafer 30 at this stage. The semiconductor chip does not bite into the wafer processing tape T1 due to the pressure applied when the tape 30 is attached. After that, the wafer processing tape T1 is peeled off from the semiconductor wafer 30, as shown in FIG. 4(b). By using the dicing tape-integrated back surface adhesive film of the present invention, it is not necessary to form a modified region on the semiconductor wafer 30. Therefore, when the wafer processing tape T1 is peeled off, the semiconductor chips whose outer peripheral portions are cut can be removed. is not peeled off together with the wafer processing tape T1.

(Thermal curing process)
When the back contact film has a thermosetting adhesive layer, it is preferable to include a step of thermally curing the adhesive layer of the back contact film (thermosetting step) after the attaching step. For example, in the thermosetting step, heat treatment is performed to thermoset the adhesive layer 21 . The heating temperature is preferably 80 to 200°C, more preferably 100 to 150°C. The heating time is preferably 0.5 to 5 hours, more preferably 1 to 3 hours. Specifically, the heat treatment is performed at 120° C. for 2 hours, for example. In the heat curing step, the heat curing of the adhesive layer 21 enhances the adhesion between the back adhesion film 20 of the dicing tape integrated back adhesion film 1 and the semiconductor wafer 30, and the dicing tape integrated back adhesion film 1 and its back adhesion are enhanced. The holding power of the film 20 against the wafer increases. In addition, when the back adhesion film does not have a thermosetting adhesive layer, it may be baked at a temperature in the range of 50 to 100° C. for several hours. Wafer fixing and holding force is increased.

(Laser marking process)
When the back adhesive film has a laser mark layer, the method for manufacturing a semiconductor device includes a step of laser marking the laser mark layer by irradiating the laser mark layer from the substrate side of the dicing tape (laser marking step). is preferred. The laser marking process is preferably performed after the thermosetting process. Specifically, in the laser marking process, for example, laser marking is performed by irradiating the laser mark layer 22 with a laser from the base material 11 side of the dicing tape 10 . By this laser marking process, various information such as character information and graphic information can be marked on each semiconductor chip. In the laser marking process, a plurality of semiconductor chips can be collectively and efficiently laser marked in one laser marking process. Examples of lasers used in the laser marking process include gas lasers and solid-state lasers. Examples of gas lasers include carbon dioxide lasers (CO ₂ lasers) and excimer lasers. Examples of solid-state lasers include Nd:YAG lasers. Note that the laser marking process may be performed for each semiconductor chip after the singulation process described later, after the pickup process, or the like.

Before the sticking process, between the sticking process and the thermosetting process, between the thermosetting process and the laser marking process, after the laser marking process, etc., at an appropriate stage, the dicing tape integrated back adhesion After the ring frame 41 is attached onto the adhesive layer 12 of the dicing tape 10 of the film 1, the dicing tape-integrated back contact film 1 with the semiconductor wafer 30 is fixed to the holder 42 of the expanding device.

(Laser light irradiation step)
In the laser beam irradiation process, for example, as shown in FIG. 5A, a laser beam focused inside the semiconductor wafer 30 is irradiated from the dicing tape 10 side of the dicing tape-integrated back adhesive film 1 to the semiconductor wafer 30 . is irradiated along the dividing line to form a modified region 30a in the semiconductor wafer 30 by ablation due to multiphoton absorption. The modified region 30a is a weakened region for separating the semiconductor wafer 30 into semiconductor chips. A method for forming the modified region 30a on the line to be divided in the semiconductor wafer 30 by laser light irradiation is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. The laser light irradiation conditions in this embodiment are as follows. For example, it is appropriately adjusted within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross-sectional area 3.14×10 ⁻⁸ cm ²
Oscillation mode Q-switch pulse Repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linear polarization (B) condenser lens Magnification 100 times or less NA 0.55
Transmittance to laser light wavelength: 100% or less (C) Moving speed of the table on which the semiconductor substrate is placed: 280 mm/sec or less

(Singulation process)
In the singulation process, for example, an expansion process (cool expansion process) is performed under relatively low temperature conditions as shown in FIG. The back contact film 20 of the dicing tape-integrated back contact film 1 is cut into small pieces 20' to obtain semiconductor chips 31 with back contact films. Specifically, in the cool expansion process, cracks are formed in the fragile modified regions 30 a of the semiconductor wafer 30 to separate the semiconductor wafers 31 into individual chips 31 . Along with this, in the cool expansion process, in the rear adhesive film 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region where the semiconductor chips 31 of the semiconductor wafer 30 are in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the crack-formed portion of the wafer located in the vertical direction in the drawing without such a deformation suppressing action. As a result, the back contact film 20 is broken at the crack formed between the semiconductor chips 31 in the vertical direction in the figure.

In the cool expansion step, a hollow columnar push-up member 43 provided in the expansion device is brought into contact with the dicing tape 10 at the lower side of the dicing tape-integrated back contact film 1 in the figure and lifted, so that the semiconductor wafer 30 is bonded. The dicing tape 10 of the dicing tape integrated back contact film 1 is expanded so as to extend in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30 . This expansion is performed under the conditions that a tensile stress within the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10 . The temperature conditions in the cool expansion step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed (the speed at which the push-up member 43 is lifted) in the cool expansion step is preferably 0.1 to 300 mm/sec. Moreover, the expansion amount in the cool expansion step is preferably 3 to 25 mm.

After the splitting by the expansion, as shown in FIG. 5(c), the push-up member 43 is lowered to release the expanded state of the dicing tape 10. Next, as shown in FIG. After that, an expanding step may be performed to widen the separation distance between the semiconductor chips 31 with the back contact film. For example, the semiconductor chip 31 is fixed to the table by vacuum suction from the dicing tape 10 side while the pushing-up member 43 is lifted again, the expanded state is released, and the pushing-up region of the dicing tape 10 is heated to shrink (thermal contraction). By doing so, the distance between the semiconductor chips 31 opened by expansion can be maintained. The expansion amount (push-up amount) when the push-up member 43 is raised again is, for example, 3 to 25 mm, and the expansion speed (the speed at which the push-up member 43 is raised) is, for example, 0.1 to 300 mm/sec. The distance between the heater and the thrust area during heat shrinking is, for example, 5 to 100 mm, and the rotation speed of the dicing tape is, for example, 1 to 10°/sec.

(Radiation irradiation step)
The method for manufacturing a semiconductor device may include a step of irradiating the pressure-sensitive adhesive layer with radiation from the substrate side (radiation irradiation step). When the pressure-sensitive adhesive layer of the dicing tape is a layer formed of a radiation-curable pressure-sensitive adhesive, instead of the above-described radiation irradiation in the manufacturing process of the dicing tape-integrated back adhesive film, the above-described singulation step is performed. Later, radiation such as ultraviolet rays may be applied to the pressure-sensitive adhesive layer from the substrate side. The dose is, for example, 50-500 mJ/cm ² . In the dicing tape-integrated back adhesive film, the region where irradiation is performed as a measure to reduce the adhesive strength of the adhesive layer (irradiated region R shown in FIGS. 1 and 2) is, for example, the adhesive layer in the back adhesive film bonding region. It is a region excluding the peripheral portion.

(Pickup process)
The pick-up step may be performed, for example, after a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with the back adhesive film using a cleaning liquid such as water, if necessary. For example, as shown in FIG. 6, the semiconductor chip 31 with the back contact film is picked up from the dicing tape 10 . For example, in a state where the dicing tape 10 with the ring frame 41 is held by the holder 42 of the device, the pin member 51 of the pick-up mechanism is placed on the lower side of the dicing tape 10 in the figure for the semiconductor chip 31 with the back contact film to be picked up. is lifted and pushed up through the dicing tape 10, and then sucked and held by a suction jig 52. - 特許庁In the pick-up process, the pushing speed of the pin member 51 is, for example, 1 to 100 mm/sec, and the pushing amount of the pin member 51 is, for example, 50 to 3000 μm.

(Flip chip mounting process)
It is preferable that the method for manufacturing the semiconductor device described above includes a step of flip-chip mounting the semiconductor chip 31 with the back contact film (flip-chip step) after the pick-up step. For example, as shown in FIG. 7, a semiconductor chip 31 with a back adhesive film is flip-chip mounted on a mounting board 61 . Examples of the mounting board 61 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. The semiconductor chip 31 is electrically connected to the mounting board 61 via the bumps 62 by flip chip mounting. Specifically, the substrate (electrode pad) (not shown) that the semiconductor chip 31 has on the circuit forming surface side and the terminal portion (not shown) that the mounting substrate 61 has are electrically connected via the bumps 62 . be. The bumps 62 are, for example, solder bumps. A thermosetting underfill agent 63 is interposed between the semiconductor chip 31 and the mounting board 61 .

As described above, a semiconductor device can be manufactured using the dicing tape-integrated back contact film of the present invention.

EXAMPLES The present invention will be described in more detail with reference to Examples below, but the present invention is not limited to these Examples.

Example 1
<Preparation of dicing tape>
100 parts by mass of 2-ethylhexyl acrylate, 19 parts by mass of 2-hydroxyethyl acrylate, and a polymerization initiator in a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirring device. A mixture containing 0.4 parts by mass of benzoyl oxide and 80 parts by mass of toluene as a polymerization solvent was stirred at 60° C. for 10 hours under a nitrogen atmosphere (polymerization reaction). As a result, _a polymer solution containing the acrylic polymer P1 was obtained. Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ and 2-methacryloyloxyethyl isocyanate (MOI) was stirred at 50° C. for 60 hours under an air atmosphere (addition reaction). In the reaction solution, the amount of MOI compounded is 12 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P2 having methacrylate groups in _side chains was obtained. Next, to the polymer solution, 0.75 parts by mass of a polyisocyanate compound (trade name “Coronate L” manufactured by Tosoh Corporation) per 100 parts by mass of the acrylic polymer P ₂ and 2 parts by mass of photopolymerization initiation. An agent (trade name “Irgacure 651”, manufactured by BASF) and toluene were added and mixed to obtain an adhesive composition having a solid content concentration of 28% by mass. Next, an applicator was used to apply the pressure-sensitive adhesive composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a surface subjected to silicone release treatment to form a pressure-sensitive adhesive composition layer. . Next, the solvent was removed from this composition layer by heating at 120° C. for 2 minutes to form a 30 μm-thick pressure-sensitive adhesive layer on the PET separator. Next, using a laminator, a polypropylene film (trade name “SC040PP1-BL”, thickness 40 μm, manufactured by Kurashiki Boseki Co., Ltd.) as a base material is applied to the exposed surface of the adhesive layer, and the embossed surface of the base material is applied. were in contact with the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer filled the concave portions of the embossed surface. This bonded body was then stored at 23° C. for 72 hours. A dicing tape of Example 1 was produced as described above.

<Preparation of back adhesion film>
100 parts by mass of acrylic resin A ₁ (trade name “Teisan Resin SG-P3”, manufactured by Nagase ChemteX Corporation) and 9 parts by mass of epoxy resin E ₁ (trade name “EPPN-501HY”, manufactured by Nippon Kayaku Co., Ltd.) , 12 parts by mass of phenolic resin H ₁ (trade name “MEH7851-H”, manufactured by Meiwa Kasei Co., Ltd.), and filler F ₁ (trade name “SO-25R”, average particle size: 0.5 μm, Admatechs Co., Ltd. 69 parts by mass of colorant D ₁ (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.) and 7 parts by mass of colorant D 1 (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.) are added to methyl ethyl ketone and mixed to form a resin composition having a solid content of 28% by mass. got Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and a back contact film of Example 1 having a thickness of 25 μm was produced on a PET separator.

<Preparation of dicing tape integrated back adhesion film>
The adhesive layer exposed in the dicing tape of Example 1 above and the exposed surface of the back adhesion film of Example 1 above are laminated using a hand roller to form a laminate including the dicing tape and the back adhesion film. A dicing tape-integrated back adhesion film having a structure was produced.

Example 2
<Preparation of back adhesion film>
100 parts by mass of acrylic resin A ₁ (trade name “Teisan Resin SG-P3”, manufactured by Nagase ChemteX Corporation) and 9 parts by mass of epoxy resin E ₁ (trade name “EPPN-501HY”, manufactured by Nippon Kayaku Co., Ltd.) , 12 parts by mass of phenolic resin H ₁ (trade name “MEH7851-H”, manufactured by Meiwa Kasei Co., Ltd.), and filler F ₁ (trade name “SO-25R”, average particle size: 0.5 μm, Admatechs Co., Ltd. 69 parts by mass of colorant D ₁ (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.) and 4 parts by mass of colorant D 1 (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.) are added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. got Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and a 25 μm-thick back adhesion film of Example 2 was produced on a PET separator.

<Preparation of dicing tape integrated back adhesion film>
The adhesive layer exposed in the dicing tape of Example 1 above and the surface exposed in the back adhesion film of Example 2 above are laminated using a hand roller to form a laminate including the dicing tape and the back adhesion film. A dicing tape-integrated back adhesion film having a structure was produced.

Example 3
<Preparation of back adhesion film>
100 parts by mass of acrylic resin A ₁ (trade name “Teisan Resin SG-P3”, manufactured by Nagase ChemteX Corporation) and 9 parts by mass of epoxy resin E ₁ (trade name “EPPN-501HY”, manufactured by Nippon Kayaku Co., Ltd.) , 12 parts by mass of phenolic resin H ₁ (trade name “MEH7851-H”, manufactured by Meiwa Kasei Co., Ltd.), and filler F ₂ (trade name “YA050C-MJI”, average particle size: 0.05 μm, Admatechs Co., Ltd. 69 parts by mass of colorant D ₁ (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.) and 4 parts by mass of colorant D 1 (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.) are added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. got Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and a 25 μm-thick back adhesion film of Example 3 was produced on a PET separator.

<Preparation of dicing tape integrated back adhesion film>
The adhesive layer exposed in the dicing tape of Example 1 above and the exposed surface of the back adhesion film of Example 3 above are laminated using a hand roller to form a laminate including the dicing tape and the back adhesion film. A dicing tape-integrated back adhesion film having a structure was produced.

Example 4
<Preparation of back adhesion film>
(Preparation of adhesive layer)
100 parts by mass of acrylic resin A ₂ (trade name “Teisan Resin SG-708-6” manufactured by Nagase ChemteX Corporation) and 19 parts by mass of epoxy resin E ₂ (trade name “YSLV-80XY” manufactured by Tohto Kasei Co., Ltd.) part, epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.) 78 parts by mass, and phenol resin H ₂ (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.) 89 mass parts and 190 parts by mass of filler F ₁ (trade name “SO-25R”, average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain a resin with a solid content concentration of 28% by mass. A composition was obtained. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and an adhesive layer having a thickness of 8 μm was formed on the PET separator.

(Preparation of laser mark layer)
100 parts by mass of acrylic resin A ₁ (trade name “Teisan Resin SG-P3”, manufactured by Nagase ChemteX Corporation) and 44 parts by mass of epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.) part, epoxy resin E ₄ (trade name “JER YL980”, manufactured by Mitsubishi Chemical Corporation) 29 parts by mass, phenol resin H ₂ (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.) 77 parts by mass, 175 parts by mass of filler F ₁ (trade name “SO-25R”, average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd.) and coloring agent D ₁ (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.) ) and 21 parts by mass of thermosetting catalyst Z ₁ (trade name “TPP”, manufactured by Hokko Chemical Industry Co., Ltd.) are added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. rice field. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent and thermally cured to prepare a 17 μm-thick laser mark layer (thermally cured layer) on the PET separator.

The laser mark layer on the PET separator prepared as described above and the adhesive layer on the PET separator were laminated using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded together under conditions of a temperature of 100° C. and a pressure of 0.6 MPa. As described above, the back contact film of Example 4 was produced.

<Preparation of dicing tape integrated back adhesion film>
The PET separator on the laser mark layer side was peeled off from the back adhesive film of Example 4, and the adhesive layer exposed on the dicing tape of Example 1 and the surface of the back adhesive film exposed by peeling the PET separator were It was pasted together using a hand roller. As described above, a dicing tape-integrated back contact film having a laminated structure including a dicing tape and a back contact film was produced.

Example 5
<Preparation of back adhesion film>
(Preparation of adhesive layer)
100 parts by mass of acrylic resin A ₁ (trade name “Teisan Resin SG-P3” manufactured by Nagase ChemteX Corporation) and 19 parts by mass of epoxy resin E ₂ (trade name “YSLV-80XY” manufactured by Tohto Kasei Co., Ltd.) , epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.) 52 parts by mass, epoxy resin E ₄ (trade name “JER YL980”, manufactured by Mitsubishi Chemical Corporation) 22 parts by mass, 76 parts by mass of phenolic resin H ₂ (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.) and filler F ₁ (trade name “SO-25R”, average particle diameter: 0.5 μm, manufactured by Admatechs Co., Ltd.) 177 parts by mass, coloring agent D ₁ (trade name “OIL BLACK BS”, manufactured by Orient Chemical Industry Co., Ltd.) 15 parts by mass, and thermosetting catalyst Z ₂ (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid concentration of 28% by mass. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and an adhesive layer (thermosetting layer) having a thickness of 8 μm was formed on the PET separator.

(Preparation of laser mark layer)
Acrylic resin A ₁ (trade name “Teisan Resin SG-P3”, manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₁ (trade name “EPPN-501HY”, manufactured by Nippon Kayaku Co., Ltd.) 66 parts by mass and 52 parts by mass of epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.) and 22 parts by mass of epoxy resin E ₄ (trade name “JER YL980”, manufactured by Mitsubishi Chemical Corporation). , Phenolic resin H ₁ (trade name “MEH7851-H”, manufactured by Meiwa Kasei Co., Ltd.) 84 parts by mass, and filler F ₁ (trade name “SO-25R”, average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd. ) 177 parts by mass, coloring agent D ₁ (trade name “OIL BLACK BS”, manufactured by Orient Chemical Industry Co., Ltd.) 15 parts by mass, and thermosetting catalyst Z ₁ (trade name “TPP”, manufactured by Hokko Chemical Industry Co., Ltd.) 24 parts by mass of this was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and a 17 μm-thick laser mark layer (thermally cured layer) was produced on the PET separator.

The laser mark layer on the PET separator prepared as described above and the adhesive layer on the PET separator were laminated using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded together under conditions of a temperature of 100° C. and a pressure of 0.6 MPa. A back contact film of Example 5 was produced as described above.

<Preparation of dicing tape integrated back adhesion film>
The PET separator on the laser mark layer side was peeled off from the back adhesive film of Example 5, and the adhesive layer exposed on the dicing tape of Example 1 and the surface of the back adhesive film exposed by peeling the PET separator were It was pasted together using a hand roller. As described above, a dicing tape-integrated back contact film having a laminated structure including a dicing tape and a back contact film was produced.

Example 6
<Preparation of back adhesion film>
(Preparation of laser mark layer)
100 parts by mass of acrylic resin A ₂ (trade name “Teisan Resin SG-708-6”, manufactured by Nagase ChemteX Corporation) and acrylic resin A ₃ (trade name “Teisan Resin SG-N50”, manufactured by Nagase ChemteX Corporation) ) 25 parts by mass, epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.) 64 parts by mass, and epoxy resin E ₄ (trade name “JER YL980”, manufactured by Mitsubishi Chemical Corporation) 28 parts by mass, 96 parts by mass of phenolic resin H ₂ (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), filler F ₁ (trade name “SO-25R”, average particle size: 0.5 μm, stock Company Admatechs) 219 parts by mass, coloring agent D ₁ (trade name “OIL BLACK BS”, manufactured by Orient Chemical Industry Co., Ltd.) 16 parts by mass, thermosetting catalyst Z ₁ (trade name “TPP”, Hokko Chemical Industry Co., Ltd.) Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent and thermally cured to prepare a 17 μm-thick laser mark layer (thermally cured layer) on the PET separator.

The laser mark layer on the PET separator produced as described above and the adhesive layer on the PET separator produced in Example 4 were laminated using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded together under conditions of a temperature of 100° C. and a pressure of 0.6 MPa. As described above, the back contact film of Example 6 was produced.

<Preparation of dicing tape integrated back adhesion film>
The PET separator on the laser mark layer side was peeled off from the back adhesion film of Example 6 above, and the adhesive layer exposed on the dicing tape of Example 1 above and the surface of the back adhesion film exposed by peeling the PET separator were It was pasted together using a hand roller. As described above, a dicing tape-integrated back contact film having a laminated structure including a dicing tape and a back contact film was produced.

Comparative example 1
<Preparation of back adhesion film>
100 parts by mass of acrylic resin A ₁ (trade name “Teisan Resin SG-P3”, manufactured by Nagase ChemteX Corporation) and 9 parts by mass of epoxy resin E ₁ (trade name “EPPN-501HY”, manufactured by Nippon Kayaku Co., Ltd.) , 12 parts by mass of phenolic resin H ₁ (trade name “MEH7851-H”, manufactured by Meiwa Kasei Co., Ltd.), and filler F ₁ (trade name “SO-25R”, average particle size: 0.5 μm, Admatechs Co., Ltd. 69 parts by mass of colorant D ₁ (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.), 7 parts by mass of heavy metal oxide-based colorant D ₂ (average particle size 0.02 μm) 17 parts by mass were added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and a back adhesion film of Comparative Example 1 having a thickness of 25 μm was produced on a PET separator.

<Preparation of dicing tape integrated back adhesion film>
The adhesive layer exposed in the dicing tape of Example 1 and the exposed surface of the back adhesion film of Comparative Example 1 were laminated using a hand roller to form a laminate including the dicing tape and the back adhesion film. A dicing tape-integrated back adhesion film having a structure was produced.

Comparative example 2
<Preparation of dicing tape>
Using a laminator, a polypropylene film (trade name “SC040PP1-BL”, thickness 40 μm, manufactured by Kurashiki Boseki Co., Ltd.) as a base material is applied to the exposed surface of the pressure-sensitive adhesive layer prepared in Example 1. The mirror surface of the base material is They were laminated together at room temperature so that the finished surface was in contact with the pressure-sensitive adhesive layer. This bonded body was then stored at 23° C. for 72 hours. A dicing tape of Comparative Example 2 was produced as described above.

<Preparation of dicing tape integrated back adhesion film>
The adhesive layer exposed in the dicing tape of Comparative Example 2 and the exposed surface of the back adhesion film of Comparative Example 1 are laminated using a hand roller to form a laminate including the dicing tape and the back adhesion film. A dicing tape-integrated back adhesion film having a structure was produced.

Comparative example 3
<Preparation of back adhesion film>
(Preparation of adhesive layer)
100 parts by mass of acrylic resin A ₂ (trade name “Teisan Resin SG-708-6” manufactured by Nagase ChemteX Corporation) and 19 parts by mass of epoxy resin E ₂ (trade name “YSLV-80XY” manufactured by Tohto Kasei Co., Ltd.) part, epoxy resin E ₃ (trade name “KI-3000-4”, manufactured by Tohto Kasei Co., Ltd.) 78 parts by mass, and phenol resin H ₂ (trade name “MEH7851-SS”, manufactured by Meiwa Kasei Co., Ltd.) 89 mass parts part, filler F ₁ (trade name “SO-25R”, average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd.) 190 parts by mass, heavy metal oxide colorant D ₂ (average particle size 0.02 μm) 17 parts by mass of this was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, an applicator was used to apply the resin composition onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface to form a resin composition layer. Next, this composition layer was heated at 130° C. for 2 minutes to remove the solvent, and an adhesive layer having a thickness of 8 μm was formed on the PET separator.

The laser mark layer on the PET separator prepared in Example 4 above and the adhesive layer on the PET separator prepared as described above were laminated using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded together under conditions of a temperature of 100° C. and a pressure of 0.6 MPa. A back contact film of Comparative Example 3 was produced as described above.

<Preparation of dicing tape integrated back adhesion film>
The PET separator on the laser mark layer side was peeled off from the back adhesive film of Comparative Example 3, and the adhesive layer exposed on the dicing tape of Example 1 and the surface of the back adhesive film exposed by peeling the PET separator were It was pasted together using a hand roller. As described above, a dicing tape-integrated back contact film having a laminated structure including a dicing tape and a back contact film was produced.

<Evaluation>
The back adhesion films and the dicing tape-integrated back adhesion films obtained in Examples and Comparative Examples were evaluated as follows. Results are shown in Tables 1 and 2.

(1) Transmittance For the back adhesion films and dicing tape-integrated back adhesion films obtained in Examples and Comparative Examples, respectively, a spectrophotometer (trade name "V-670", manufactured by JASCO Corporation) was used. , and transmittance measurements at a wavelength of 1000 nm. The linear transmittance of infrared rays with a wavelength of 1000 nm was taken as the measurement without the integrating sphere, and the total light transmittance of the infrared rays with a wavelength of 1000 nm was taken with the integrating sphere.

(2) Haze Regarding the haze of the dicing tape-integrated back adhesion films obtained in Examples and Comparative Examples, using the total light transmittance and the linear transmittance obtained in the above transmittance measurement, based on the following formula: Calculated.
Haze (%) = (total light transmittance - linear transmittance) / total light transmittance

(3) Arithmetic Mean Surface Roughness For the dicing tape-integrated back adhesion films obtained in Examples and Comparative Examples, an optical interference surface roughness meter (trade name “Wyko NT9100”, manufactured by Nippon Veeco Co., Ltd.) was used to measure the surface roughness at 50 times. , and the arithmetic average surface roughness (Ra) of the back adhesion film surface and the back surface of the substrate was measured.

(4) Breaking Evaluation The dicing tape-integrated back adhesion films obtained in Examples and Comparative Examples were evaluated for breaking in the following manner. First, a semiconductor wafer with a thickness of 300 μm and a size of 12 inches was adhered to the rear adhesion film surface of the dicing tape-integrated rear adhesion film in which the ring frame was adhered to the adhesive layer under conditions of a temperature of 80° C. and a pressure of 0.15 MPa. Matched. Next, the focal point was aligned with the inside of the semiconductor wafer, and a 1064 nm laser beam was irradiated from the dicing tape side along grid-shaped (2 mm × 2 mm) dividing lines to form a modified region inside the semiconductor wafer. . Thereafter, heat treatment was performed together with the ring frame at a temperature of 80° C. for 1 hour. Then, using a die separator (trade name “DDS2300”, manufactured by DISCO Corporation), the semiconductor wafer and the back contact film were cut. Specifically, first, in a cool expander unit, it is cooled at a temperature of -15 ° C. for 2 minutes, and cool expanded under the conditions of a speed at the time of cool expansion (expansion speed) of 200 mm / sec and a thrusting amount of the thrusting part (expanding amount) of 15 mm. was performed to break the semiconductor wafer. After holding the expanded state for 1 minute, further expansion is performed under the conditions of a speed (expansion speed) of 1 mm/sec and an expansion amount of 15 mm, the distance between the heater and the dicing tape is set to 20 mm, and the rotation speed of the dicing tape. The dicing tape at the raised portion was thermally shrunk at 200° C. while rotating at 5°/sec. At this time, among the four sides of each semiconductor chip, the number of sides where the semiconductor chip and the back contact film were cut was counted, and the ratio of the number of cut sides to the total number of sides was calculated as the cutting rate. The breaking rate was evaluated as ⊚ when it was 90% or more, ◯ when it was 60% or more and less than 90%, Δ when it was 30% or more and less than 60%, and X when it was less than 30%. In all the examples, when the dicing tape-integrated back contact film was used, chipping of the semiconductor chip and peeling from the back contact film did not occur.

1 dicing tape-integrated rear adhesive film 10 dicing tape 11 base material 12 adhesive layer 20 rear adhesive film 21 adhesive layer 22 laser mark layer 30 semiconductor wafer 30a modified region 31 semiconductor chip

Claims (5)

a dicing tape having a laminated structure including a substrate and an adhesive layer;
and a semiconductor back adhesive film that is releasably adhered to the adhesive layer of the dicing tape,
The semiconductor back adhesion film is a dicing tape-integrated semiconductor back adhesion film containing 0.5 to 10% by mass of a black colorant and having a linear transmittance of 20% or more for infrared rays having a wavelength of 1000 nm. 2. The dicing tape-integrated semiconductor back adhesive film according to claim 1, wherein the in-line transmittance B of infrared rays having a wavelength of 1000 nm is 20% or more. The ratio of the total light transmittance A and the linear transmittance B of infrared rays with a wavelength of 1000 nm [total light transmittance A (%) / linear transmittance B (%)] is 1.0 to 4.5, or 3. The dicing tape-integrated semiconductor back adhesion film according to 2 above. The dicing tape-integrated semiconductor back contact film according to any one of claims 1 to 3, which has a haze value of 80% or less. The dicing tape-integrated semiconductor back adhesion film according to any one of claims 1 to 4, wherein the back surface of the substrate and the surface of the semiconductor back adhesion film both have an arithmetic mean surface roughness of 100 nm or less.

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