KR102600254B1 - Semiconductor process sheet and semiconductor package manufacturing method - Google Patents

Abstract

The semiconductor process sheet of the present invention includes a double-sided adhesive sheet (10) and a partial encapsulant layer (20). The double-sided adhesive sheet 10 includes a base material 11, a pressure-sensitive adhesive layer 12, and, for example, a pressure-sensitive adhesive layer 13 in a laminated structure between its adhesive surfaces 10a and 10b. The partial encapsulant layer 20 is located on the adhesive surface 10b of the double-sided adhesive sheet 10. The method of the present invention includes, for example, a process of mounting a plurality of semiconductor chips on the partial encapsulant layer 20 of a semiconductor process sheet in which the adhesive surface 10a is bonded to a support, and encapsulant supplied to embed the semiconductor chips. A step of forming an encapsulant portion by curing the partial encapsulant layer 20, a step of separating the encapsulant portion from the adhesive surface 10b, a step of forming a wiring structure portion on the encapsulant portion, and forming the encapsulant portion and the wiring structure portion into a semiconductor chip. It includes the process of dividing each part. These semiconductor process sheets and methods are suitable for efficiently manufacturing semiconductor packages.

Description

Semiconductor process sheet and semiconductor package manufacturing method

The present invention relates to a semiconductor process sheet that can be used in manufacturing a semiconductor package, and a semiconductor package manufacturing method.

In the manufacture of so-called semiconductor packages with semiconductor elements inside, conventionally, after each semiconductor element is encapsulated with a resin material, wiring or external electrodes electrically connected to the semiconductor elements in the encapsulation resin are formed on the surface of the encapsulation resin. There is. The manufacturing technology of the semiconductor package is described, for example, in Patent Document 1 below.

Japanese Patent Publication No. 2017-88782

In the semiconductor package manufacturing process, performing an encapsulation process, a wiring formation process, etc. for each element tends to cause complexity of the semiconductor package manufacturing process and an increase in cost. As semiconductor devices become smaller and more dense, and as semiconductor packages become more fine-width and multi-terminal, the impact on manufacturing costs of performing encapsulation processes and wire formation processes for each device tends to increase.

The present invention was made under these circumstances, and its purpose is to provide a semiconductor process sheet and a semiconductor package manufacturing method suitable for efficiently manufacturing a semiconductor package.

According to a first aspect of the present invention, a semiconductor process sheet is provided. This semiconductor process sheet includes a double-sided adhesive sheet and a partial encapsulant layer. The double-sided adhesive sheet has a first adhesive surface and a second adhesive surface opposite to the adhesive surface, and between these adhesive surfaces, it includes at least an adhesive force-reducing adhesive layer, an adhesive layer, and a substrate positioned between them. It has a layered structure. The adhesive force reduction type adhesive layer is preferably a heat foamable adhesive layer or a radiation curable adhesive layer. The partial sealant layer is in peelable contact with the second adhesive surface of the double-sided adhesive sheet. In addition, in the laminated structure of the double-sided adhesive sheet, for example, the adhesive force-reducing type adhesive layer is located on the first adhesive surface side with respect to the base material, and the adhesive layer is located on the second adhesive surface side with respect to the base material. In this case, the adhesive force-reducing type adhesive layer may be a layer forming the first adhesive surface, and the adhesive layer may be a layer forming the second adhesive surface. Alternatively, in the laminated structure of the double-sided adhesive sheet, the adhesive force-reducing type adhesive layer may be located on the second adhesive surface side rather than the base material, and the adhesive layer may be located on the first adhesive surface side rather than the base material. In this case, the adhesive force-reducing type adhesive layer may be a layer forming the second adhesive surface, and the adhesive layer may be a layer forming the first adhesive surface. This semiconductor process sheet having such a configuration can be used in the manufacturing process of a semiconductor package, as will be described later with respect to the second aspect of the present invention.

The partial encapsulant layer in this semiconductor process sheet is preferably an adhesive layer for chip electrode embedding. In this case, the ratio of the thickness of the adhesive layer for chip electrode embedding to the height of the chip electrode to be embedded is preferably 0.1 to 10, more preferably 0.2 to 9.

The thickness of the partial encapsulant layer in this semiconductor process sheet is preferably 1 to 300 μm, more preferably 5 to 250 μm, and still more preferably 10 to 200 μm.

In this semiconductor process sheet, the peel adhesion between the second adhesive surface of the double-sided adhesive sheet and the partial encapsulant layer in a peel test under the conditions of 23°C, peel angle of 180°, and tensile speed of 300 mm/min, The value of the ratio of peel adhesion to the stainless steel plane in a peel test under the conditions of 23°C, peel angle of 180°, and tensile speed of 300 mm/min on the first adhesive surface of the adhesive sheet is preferably 0.003 to 3. Preferably it is 0.004 to 2.5. For example, in a double-sided adhesive sheet, when the adhesive force-reducing adhesive layer forms the first adhesive surface and the adhesive layer forms the second adhesive surface, the peeling angle between the adhesive layer and the partial encapsulant layer is 23°C. Regarding the peel adhesion in a peel test under the conditions of 180° and a tensile speed of 300 mm/min, the reduced adhesion type adhesive layer was compared in a peel test under the conditions of 23°C, a peel angle of 180°, and a tensile speed of 300 mm/min. The value of the ratio of peel adhesion to the stainless steel plane is preferably 0.003 to 3, more preferably 0.004 to 2.5.

According to a second aspect of the present invention, a semiconductor package manufacturing method is provided. The present manufacturing method is a method for manufacturing a semiconductor package using the above-described semiconductor process sheet according to the first aspect of the present invention, and includes the following chip mount process, encapsulation process, detach process, wire formation process, and segmentation process. Includes at least

In the chip mounting process, a plurality of semiconductor chips are mounted on the partial sealing agent layer in the semiconductor process sheet where the first adhesive surface side is bonded to the support. A semiconductor chip is, for example, a semiconductor chip with directed electrodes that has a chip body and at least one chip electrode extending from the chip body. In this process, face-down mounting may be performed with the chip electrodes of the semiconductor chip facing the partial encapsulating agent layer, or face-up mounting may be performed with the side opposite to the chip electrode of the semiconductor chip facing the partial encapsulating agent layer. It may be done.

In the encapsulation process, an encapsulant is supplied to embed a plurality of semiconductor chips on a semiconductor process sheet, the encapsulant and the partial encapsulant layer are cured, and an encapsulant portion is formed. As a result, an encapsulating material portion (chip embedding encapsulating material portion) that is carried by embedding a semiconductor chip is obtained.

In this manufacturing method, a curing step of curing the partial encapsulant layer may be performed after the above-described chip mounting step and before supply of the encapsulant onto the semiconductor process sheet. In this case, in the encapsulation process, the encapsulant supplied on the semiconductor process sheet to embed a plurality of semiconductor chips is cured on the cured portion encapsulant layer, thereby forming the encapsulant portion. According to this configuration, the encapsulation process is performed with the holding power of the semiconductor chip by the semiconductor process sheet being strengthened by curing the partial encapsulant layer. Therefore, this configuration is suitable for suppressing misalignment of the semiconductor chip due to shrinkage during curing of the encapsulant in the encapsulation process. Such suppression of semiconductor chip positional deviation is desirable, for example, in forming a wiring structure including wiring for each semiconductor chip with high precision in a subsequent wiring formation process.

The detach process includes separating the sealing material portion from the second adhesive surface of the double-sided adhesive sheet in the semiconductor process sheet. The detach process preferably includes measures to reduce adhesion to the adhesion reduction type adhesive layer in the semiconductor process sheet. When the adhesive force reduction type adhesive layer is a heat foamable adhesive layer, the adhesive force reduction measure is heating under predetermined conditions. When the adhesion reduction type adhesive layer is a radiation-curable adhesive layer, the adhesion reduction measure is radiation irradiation, such as ultraviolet irradiation at a predetermined irradiation dose. Through this detach process, the chip embedding encapsulation material can be removed from the above-described support. In addition, after the detach process, grinding processing may be performed on the encapsulation material part to expose the chip electrode of each semiconductor chip in the encapsulation material part to the outside, if necessary.

In the wiring forming process, a wiring structure portion containing wiring for each semiconductor chip is formed on the encapsulating material portion. The wiring for each semiconductor chip includes external electrodes such as bump electrodes in each semiconductor package manufactured for each semiconductor chip by this manufacturing method.

In the individualization process, the encapsulation material portion and the wiring structure portion are divided for each semiconductor chip to obtain a semiconductor package. In the above manner, a semiconductor package is manufactured.

This semiconductor package manufacturing method according to the second aspect of the present invention is suitable for efficiently manufacturing a semiconductor package. The reason is as follows.

When manufacturing a semiconductor package using a conventional semiconductor process sheet consisting of a double-sided adhesive sheet without a partial encapsulant layer, in the chip mounting process, one side of the double-sided adhesive sheet is bonded to the support body. A plurality of semiconductor chips are mounted. At this time, face-up mounting is performed in which the side opposite to the chip electrode of the semiconductor chip is bonded to the double-sided adhesive sheet. Next, on the double-sided adhesive sheet, a sealing material portion that embeds a plurality of semiconductor chips is formed. Next, the double-sided adhesive sheet is peeled from the encapsulating material portion (conventional chip embedding encapsulating material portion) accompanying a plurality of semiconductor chips (detach process). In the conventional chip embedding encapsulation material, the so-called back side of each semiconductor chip is exposed on the side where the double-sided adhesive sheet is peeled. Next, in such a sealing material portion, a predetermined resin sheet is bonded to the surface on the side from which the double-sided adhesive sheet was peeled. As described above, the back surface of each semiconductor chip is exposed on the side from which the double-sided adhesive sheet has been peeled off in the encapsulating material portion, and since the symmetry in the thickness direction of the encapsulating material portion is low, the encapsulating material portion is inevitably bent. throw it away In a state where such bending occurs, subsequent processes cannot proceed properly. Therefore, in the semiconductor package manufacturing method in which a conventional semiconductor process sheet made of a double-sided adhesive sheet is used, after the detach process, a predetermined resin sheet is bonded to the side of the sealing material portion from which the double-sided adhesive sheet was peeled, It is necessary to perform so-called warpage (bending) control on the conventional chip embedding encapsulation material.

In contrast, in the semiconductor package manufacturing method according to the second aspect of the present invention, a special process for warpage control of the chip embedding encapsulation material is not essential after the detach process. This is because, in this manufacturing method, the above-described semiconductor process sheet according to the first aspect of the present invention is used. Specifically, in the chip mounting process, a plurality of semiconductor chips are mounted on the partial encapsulant layer of the semiconductor process sheet, and in the encapsulation process, the encapsulant provided to embed the plurality of semiconductor chips is separated from the partial encapsulant layer or the cured partial encapsulant layer. This is because the encapsulating material is formed, and the chip embedding encapsulating material formed in this way has higher symmetry in the thickness direction than the conventional chip embedding encapsulating material described above, and is suitable for suppressing warping. This manufacturing method, which does not require a process for warpage control of the chip embedding encapsulation material, is suitable for efficiently manufacturing semiconductor packages.

As described above, the semiconductor process sheet according to the first aspect of the present invention and the semiconductor package manufacturing method according to the second aspect are suitable for efficiently manufacturing a semiconductor package.

In the chip mounting process of the present semiconductor package manufacturing method, preferably, each of the semiconductor chips with direct electrodes described above is mounted with respect to the partial encapsulant layer so that the chip electrodes enter the partial encapsulant layer (mounting in the face down). .

In such a face-down chip mounting process, each semiconductor chip is preferably positioned so that the chip electrode of the semiconductor chip enters the partial encapsulant layer in the semiconductor process sheet and reaches the second adhesive surface of the double-sided adhesive sheet. It is mounted against the partial encapsulant layer. In this case, in the subsequent wiring forming process, a wiring structure portion including wiring electrically connected to the chip electrode already exposed on the surface of the encapsulating material portion is formed. According to these configurations, when going through a chip mount process in the face-up as described later, the wiring structure can be appropriately formed without performing a sealing material grinding process required before the wiring forming process. Therefore, this configuration is desirable for efficiently manufacturing semiconductor packages.

In the chip mounting process of the present semiconductor package manufacturing method, each of the semiconductor chips with direct electrodes described above may be mounted with respect to the partial encapsulant layer so as to be bonded to the partial encapsulant layer on the side opposite to the chip electrode in the chip body. . In this case, the semiconductor package manufacturing method further includes a grinding process of exposing the chip electrode of the semiconductor chip by grinding the encapsulant after the detach process, and in the wiring forming process, the chip electrode is exposed on the surface of the encapsulant. A wiring structure is formed that includes wiring that is electrically connected to. According to this configuration, the wiring structure can be appropriately formed.

1 is a partial cross-sectional schematic diagram of a semiconductor process sheet according to an embodiment of the present invention.
FIG. 2 shows some steps in a semiconductor package manufacturing method using the semiconductor process sheet shown in FIG. 1.
FIG. 3 shows some steps in a semiconductor package manufacturing method using the semiconductor process sheet shown in FIG. 1.
FIG. 4 shows some steps in a semiconductor package manufacturing method using the semiconductor process sheet shown in FIG. 1.
FIG. 5 shows some steps in a semiconductor package manufacturing method using the semiconductor process sheet shown in FIG. 1.
FIG. 6 shows some steps in a semiconductor package manufacturing method using the semiconductor process sheet shown in FIG. 1.
FIG. 7 shows some steps in a semiconductor package manufacturing method using the semiconductor process sheet shown in FIG. 1.

1 is a partial cross-sectional schematic diagram of a semiconductor process sheet (X) according to an embodiment of the present invention. The semiconductor process sheet (X) can be used in the manufacturing process of a semiconductor package and includes a double-sided adhesive sheet (10) and a partial encapsulant layer (20). The double-sided adhesive sheet 10 has an adhesive surface 10a and an adhesive surface 10b opposite to this, and between these adhesive surfaces 10a and 10b, a substrate 11 and a pressure-sensitive adhesive layer of reduced adhesive force are provided. It has a laminated structure including (12) and an adhesive layer (13). The partial sealant layer 20 is in close contact with the adhesive surface 10b of the double-sided adhesive sheet 10 in a peelable manner.

The base material 11 of the double-sided adhesive sheet 10 is an element that functions as a support in the double-sided adhesive sheet 10 to the semiconductor process sheet (X). The base material 11 is, for example, a plastic base material, and a plastic film can be suitably used as the plastic base material. Constituent materials of the plastic substrate include, for example, polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyether imide, Examples include polyamide, wholly aromatic polyamide, polyphenyl sulfide, aramid, fluororesin, cellulose resin, and silicone resin. Examples of polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerization polypropylene, block copolymerization polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene- Examples include vinyl acetate copolymer (EVA), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Examples of polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The base material 11 may be made of one type of material or may be made of two or more types of materials. The base material 11 may have a single-layer structure or a multi-layer structure. In addition, when the base material 11 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film.

Each of the surface on the adhesive layer 12 side and the surface on the adhesive layer 13 side of the substrate 11 may be subjected to physical treatment, chemical treatment, or undercoating treatment to increase adhesion to the adhesive layer. . Physical treatments include, for example, corona treatment, plasma treatment, sand mat treatment, ozone exposure treatment, flame exposure treatment, high-pressure electric exposure treatment, and ionizing radiation treatment. Examples of chemical treatment include chromic acid treatment.

The thickness of the substrate 11 is preferably 5 μm or more, more preferably, from the viewpoint of ensuring the strength for the substrate 11 to function as a support in the double-sided adhesive sheet 10 or the semiconductor process sheet is more than 10μm. Additionally, from the viewpoint of realizing appropriate flexibility in the double-sided adhesive sheet 10 to the semiconductor process sheet (X), the thickness of the substrate 11 is preferably 300 μm or less, and more preferably 200 μm or less.

The adhesive layer 12 of the double-sided adhesive sheet 10 contains a reduced adhesive force type adhesive. Examples of the adhesive-reducing adhesive include a heat-foamable adhesive and a radiation-curable adhesive of a type (first type) whose adhesive strength is reduced by radiation irradiation to the point where it cannot be used in the semiconductor package manufacturing process. In the adhesive layer 12 of this embodiment, one type of adhesive force reduction type adhesive may be used, or two or more types of adhesive force reduction type adhesives may be used.

The heat-foamable adhesive that can be used in the adhesive layer 12 contains, for example, an adhesive base material and at least a component that foams or expands by heating. When the foamable component or expandable component contained in the heat-foamable adhesive layer receives sufficient heating, it expands and creates an uneven shape on its surface (adhesive surface). When the heat-foamable adhesive layer is subjected to such heating while the adhesive surface is attached to a predetermined adherend, the adhesive layer expands and creates an uneven shape on the adhesive surface, thereby increasing the total area of adhesion to the adherend. decreases, the adhesion to the adherend decreases.

Adhesive base materials for heat-foamable adhesives include, for example, acrylic polymers such as acrylic adhesives, rubber-based adhesives, and silicone-based adhesives.

The acrylic polymer as an acrylic adhesive preferably contains monomer units derived from acrylic acid ester and/or methacrylic acid ester as the monomer unit with the largest mass ratio. “(meth)acrylic” shall mean “acrylic” and/or “methacryl.”

Examples of (meth)acrylic acid esters for forming monomer units of acrylic polymers include (meth)acrylic acid esters containing hydrocarbon groups such as alkyl (meth)acrylic acid esters, cycloalkyl (meth)acrylic acid esters, and aryl (meth)acrylic acid esters. can be mentioned. Examples of alkyl (meth)acrylic acid include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, and pentyl ester of (meth)acrylic acid. Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, Hexadecyl ester, octadecyl ester, and eicosyl ester. Examples of (meth)acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth)acrylic acid. Examples of aryl (meth)acrylate include phenyl (meth)acrylate and benzyl (meth)acrylate. As a monomer for forming a monomer unit of an acrylic polymer, one type of (meth)acrylic acid ester may be used, or two or more types of (meth)acrylic acid ester may be used. In order to properly express basic properties such as adhesion due to (meth)acrylic acid ester in an acrylic adhesive, the proportion of (meth)acrylic acid ester in the total monomer components for forming the acrylic polymer is preferably 40% by mass. or more, more preferably 60% by mass or more.

The acrylic polymer may contain a monomer unit derived from one or two or more types of other monomers copolymerizable with (meth)acrylic acid ester in order to improve its cohesion, heat resistance, etc. Other such monomers include, for example, carboxyl group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. and functional group-containing monomers. Examples of carboxylic acid-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of acid anhydride monomers include maleic anhydride and itaconic anhydride. Examples of hydroxyl group-containing monomers include 2-hydroxyethyl (meth)acrylic acid, 2-hydroxypropyl (meth)acrylic acid, 4-hydroxybutyl (meth)acrylic acid, and 6-hydroxyhexyl (meth)acrylic acid. , 8-hydroxyoctyl (meth)acrylic acid, 10-hydroxydecyl (meth)acrylic acid, 12-hydroxydodecyl (meth)acrylic acid, and (4-hydroxymethylcyclohexyl)methyl (meth)acrylic acid. . Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of monomers containing a sulfonic acid group include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, and sulfopropyl (meth) )acrylates and (meth)acryloyloxynaphthalenesulfonic acid. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethyl acryloyl phosphate.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer such as (meth)acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. Examples of such multifunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol di(meth)acrylate. , neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa. (meth)acrylates, epoxy (meth)acrylates (i.e. polyglycidyl (meth)acrylate), polyester (meth)acrylates, and urethane (meth)acrylates. As a monomer for the acrylic polymer, one type of polyfunctional monomer may be used, or two or more types of polyfunctional monomers may be used. The ratio of the multifunctional monomer in the total monomer component for forming the acrylic polymer is preferably 40% by mass or less in order to properly express basic properties such as adhesiveness due to (meth)acrylic acid ester in the acrylic adhesive. More preferably, it is 30% by mass or less.

Acrylic polymers can be obtained by polymerizing the raw material monomers used to form them. Examples of polymerization methods include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

From the viewpoint of high cleanliness in the semiconductor package manufacturing method in which the double-sided adhesive sheet 10 to the semiconductor process sheet (X) is used, it is preferable that the low molecular weight component in each adhesive layer in the double-sided adhesive sheet 10 is small, The number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3 million. The number average molecular weight of the acrylic polymer is controlled by, for example, the polymerization method employed, the type and amount of polymerization initiator used, the temperature and time of the polymerization reaction, the concentration of various monomers in the total monomer components, the monomer dropping rate, etc. It can be.

As the polymerization initiator, for example, an azo-based polymerization initiator, a peroxide-based polymerization initiator, a redox-based polymerization initiator, etc. are used depending on the polymerization method. As an azo polymerization initiator, for example, 2,2'-azobisisobutyronitrile, 2,2'-azobis-2-methylbutyronitrile, 2,2'-azobis(2-methyl propionic acid) dimethyl and 4,4'-azobis-4-cyanovalerian acid. Examples of peroxide-based polymerization initiators include dibenzoyl peroxide and tert-butyl permaleate.

In order to increase the number average molecular weight of the acrylic polymer, for example, an external crosslinking agent may be added to the composition for forming an adhesive layer. Examples of external crosslinking agents for reacting with acrylic polymer to form a crosslinking structure include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol compounds, etc.), aziridine compounds, and melamine crosslinking agents. The content of the external crosslinking agent in the adhesive base material is preferably 6 parts by mass or less, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the acrylic polymer.

Examples of components for heat-foamable pressure-sensitive adhesives that foam or expand by heating include foaming agents and heat-expandable microspheres.

Foaming agents for heat-foamable pressure-sensitive adhesives include various inorganic and organic foaming agents. Examples of inorganic foaming agents include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, and azides. Examples of organic blowing agents include chlorofluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate. Azo compounds, paratoluenesulfonyl hydrazide, diphenylsulfone-3,3'-disulfonyl hydrazide, 4,4'-oxybis(benzenesulfonyl hydrazide), allylbis(sulfonyl hydrazide) hydrazine-based compounds such as hydrazine-based compounds such as ρ-toluylenesulfonyl semicarbazide and 4,4'-oxybis(benzenesulfonyl semicarbazide), 5-morpholyl-1,2, Triazole-based compounds such as 3,4-thiatriazole, and N,N'-dinitrosopentamethylenetetramine and N,N'-dimethyl-N,N'-dinitrosoterephthalamide. N-nitroso-based compounds can be mentioned.

Examples of heat-expandable microspheres for heat-expandable pressure-sensitive adhesives include microspheres in which a substance that is easily gasified and expanded by heating is encapsulated in the outer shell. Substances that are easily gasified and expanded by heating include, for example, isobutane, propane, and pentane. Heat-expandable microspheres can be produced by encapsulating a material that is easily gasified and expanded by heating into a shell-forming material by a coacervation method, an interfacial polymerization method, or the like. As the shell-forming material, a material that exhibits thermal meltability or a material that can be ruptured by the effect of thermal expansion of the encapsulating material can be used. Such materials include, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyvinylidene chloride. Sulfone can be used.

When the pressure-sensitive adhesive layer 12 is a reduced-adhesion pressure-sensitive adhesive layer (heat-foamable pressure-sensitive adhesive layer) made of a heat-foamable pressure-sensitive adhesive, the thickness of the pressure-sensitive adhesive layer 12 is, for example, 5 to 100 μm.

Examples of the first type of radiation-curable adhesive that can be used in the adhesive layer 12 include a base polymer such as an acrylic polymer as an acrylic adhesive and a radiation-polymerized adhesive having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples include addition-type radiation-curable adhesives containing a monomer component or an oligomer component.

As the acrylic polymer for forming the radiation-curable adhesive of the first type, those described above as the acrylic polymer forming the adhesive main agent in the heat-foamable adhesive can be adopted.

Examples of radiation-polymerizable monomer components for forming the first type of radiation-curable adhesive include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetra(meth)acrylate. ) acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. As radiation-polymerizable oligomer components for forming the first type of radiation-curable adhesive, for example, various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. and those with a molecular weight of about 100 to 30,000 are suitable. The total content of radiation-polymerizable monomer components and oligomer components in the radiation-curable adhesive is determined in a range that can appropriately reduce the adhesive strength of the formed adhesive layer 12 by radiation irradiation, and is 100 parts by mass of a base polymer such as an acrylic polymer. For example, it is 5 to 500 parts by mass, and preferably 40 to 150 parts by mass. Additionally, as an addition-type radiation-curable adhesive, for example, one disclosed in Japanese Patent Application Laid-Open No. 60-196956 may be used.

Examples of the first type of radiation-curable adhesive that can be used in the adhesive layer 12 include, for example, a base having a functional group such as a radiation-polymerizable carbon-carbon double bond at the end of the polymer side chain or polymer main chain. Also included are internal-type radiation-curable adhesives containing polymers. Such an intrinsic type radiation-curable adhesive is suitable for suppressing unintended changes in adhesive properties over time due to movement of low molecular weight components within the formed adhesive layer 12.

The base polymer contained in the internal radiation curable adhesive is preferably an acrylic polymer as the basic skeleton. As the acrylic polymer forming such a basic skeleton, the acrylic polymer forming the adhesive main body in the heat-expandable adhesive can be adopted. As a method of introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer, and then the first functional group is added to the acrylic polymer. Condensation of a compound having a radiation-polymerizable carbon-carbon double bond with a predetermined functional group (second functional group) that can be combined by causing a reaction between the acrylic polymers while maintaining the radiation-polymerizability of the carbon-carbon double bond Methods of conducting a reaction or addition reaction are included.

Combinations of the first functional group and the second functional group include, for example, a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group and hydride. One example is the rock era. Among these combinations, from the viewpoint of ease of reaction tracking, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group are suitable. In addition, since manufacturing a polymer having a highly reactive isocyanate group is technically difficult, in terms of ease of manufacturing or obtaining an acrylic polymer, the first functional group on the acrylic polymer side is a hydroxy group, and the first functional group on the acrylic polymer side is a hydroxy group. 2 It is more suitable when the functional group is an isocyanate group. Additionally, examples of the isocyanate compound having a radiation-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group include methacryloyl isocyanate and 2-methacryloyloxyethyl. isocyanate (MOI) and m-isopropenyl-α,α-dimethylbenzyl isocyanate.

The radiation-curable adhesive that can be used in the adhesive layer 12 preferably contains a photopolymerization initiator. Examples of photopolymerization initiators include α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, benzophenone-based compounds, and thioxanthone-based compounds. , camphorquinone, halogenated ketone, acylphosphine oxide, and acylphosphonate. Examples of α-ketol-based compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2 -methyl-2-hydroxypropiophenone and 1-hydroxycyclohexyl phenyl ketone. Acetophenone-based compounds include, for example, methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1. -[4-(methylthio)-phenyl]-2-morpholinopropane-1. Examples of benzoin ether-based compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of ketal-based compounds include benzyl dimethyl ketal. Examples of aromatic sulfonyl chloride-based compounds include 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of benzophenone-based compounds include benzophenone, benzoyl benzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of thioxanthone-based compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropyl thioxanthone, and 2,4-dichloro. Examples include thioxanthone, 2,4-diethyl thioxanthone, and 2,4-diisopropyl thioxanthone. The content of the photopolymerization initiator in the radiation-curable adhesive that can be used in the adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of a base polymer such as an acrylic polymer.

As a radiation-curable adhesive for the adhesive layer 12, for example, a type of adhesive that is cured by irradiation of electron beams, ultraviolet rays, α-rays, β-rays, γ-rays or type of adhesive (ultraviolet curable adhesive) can be used particularly suitably.

When the pressure-sensitive adhesive layer 12 is a reduced-adhesion type pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) made of the first type of radiation-curable pressure-sensitive adhesive, the thickness of the pressure-sensitive adhesive layer 12 is, for example, 2 to 50 μm.

The adhesive layer 12 may contain a tackifier, an anti-aging agent, a colorant, etc. in addition to each of the components described above. Colorants include pigments and dyes. Additionally, the colorant may be a compound that is colored when irradiated with radiation. Examples of such compounds include leuco dye.

The adhesive layer 13 of the double-sided adhesive sheet 10 contains an adhesive. As the adhesive for the adhesive layer 13, for example, a pressure-sensitive adhesive or a radiation-curable adhesive of a type (second type) whose adhesive strength decreases due to radiation irradiation but maintains adhesive strength enough to be used in the semiconductor package manufacturing process. can be mentioned. In the adhesive layer 13 of this embodiment, one type of adhesive may be used, and two or more types of adhesives may be used.

Pressure-sensitive adhesives that can be used in the adhesive layer 13 include acrylic polymers such as acrylic adhesives, rubber-based adhesives, and silicone-based adhesives. As the acrylic polymer for the pressure-sensitive adhesive, the acrylic polymer that forms the adhesive main component in the heat-foamable adhesive can be adopted.

The second type of radiation-curable adhesive that can be used in the adhesive layer 13 includes, for example, a base polymer such as an acrylic polymer as an acrylic adhesive, and a radiation-polymerized adhesive having a functional group such as a radiation-polymerizable carbon-carbon double bond. An addition-type radiation-curable adhesive containing a monomer component or an oligomer component can be used. As components for constituting this adhesive, for example, the components described above regarding the addition-type radiation curable adhesive for the adhesive layer 12 can be used. The degree of decrease in adhesive strength due to radiation irradiation in an additive type radiation-curable adhesive can be controlled, for example, by the content of functional groups such as radiation-polymerizable carbon-carbon double bonds and the type and mixing amount of the photopolymerization initiator. .

Examples of the second type of radiation-curable adhesive that can be used in the adhesive layer 13 include, for example, a base having a functional group such as a radiation-polymerizable carbon-carbon double bond at the terminal of the polymer side chain or polymer main chain. Also included are internal-type radiation-curable adhesives containing polymers. As components for constituting this adhesive, for example, the components described above regarding the internal type radiation-curable adhesive for the adhesive layer 12 can be used. The degree of decrease in adhesive strength due to radiation irradiation in an intrinsic type radiation-curable adhesive can be controlled, for example, by the content of functional groups such as radiation-polymerizable carbon-carbon double bonds and the type and mixing amount of the photopolymerization initiator. there is.

The thickness of the adhesive layer 13 is, for example, 1 to 50 μm.

The adhesive layer 13 may contain a tackifier, an anti-aging agent, a colorant, etc. in addition to each of the components described above. Colorants include pigments and dyes. Additionally, the colorant may be a compound that is colored when irradiated with radiation. Examples of such compounds include leuco dye.

In this embodiment, as described above, the adhesive layer 12, which is a pressure-reducing adhesive layer, is located closer to the adhesive surface 10a than the substrate 11, and the adhesive layer 13 is located closer to the adhesive surface 10a than the substrate 11. It is located on the (10b) side. Regarding the double-sided adhesive sheet 10 of the semiconductor process sheet It may be located closer to the adhesive surface (10a) than (11).

The double-sided adhesive sheet 10 of the semiconductor process sheet Such other layers include, for example, a thin adhesive layer provided on the adhesive layer 12 to form an adhesive surface when the adhesive layer 12 is a heat-foamable adhesive layer, or the adhesive layer 12. An example is a rubber-like organic elastic layer provided between the adhesive layer 12 and the base material 11 in the case of a heat-foamable adhesive layer.

When the thin adhesive layer covering the surface of the heat-foamable adhesive layer is adhered to a predetermined adherend, the heat-foamable adhesive layer expands by heating and deforms its surface uneven shape, thereby causing the thin adhesive layer to form. It is also deformed, reducing the total area of adhesion to its counterpart adherend, thereby lowering the adhesive force to the adherend. It is possible to utilize the desired adhesive force in a thin adhesive layer while utilizing the adhesive force reduction function of the heat-foamable adhesive. The thickness of the thin adhesive layer on this heat-foamable adhesive layer is, for example, 2 to 30 μm.

By providing a rubber-like organic elastic layer between the base material and the heat-foamable pressure-sensitive adhesive layer, it becomes easy to expand the heat-foamable pressure-sensitive adhesive layer preferentially and highly uniformly in the thickness direction by heating. Such a rubbery organic elastic layer is formed, for example, of natural rubber, synthetic rubber, or synthetic resin having rubber elasticity with a Shore D hardness of 50 or less based on ASTM D-2240. Examples of synthetic rubber and the above synthetic resins for the rubber-like organic elastic layer include synthetic rubbers such as nitrile-based, diene-based, and acrylic-based, thermoplastic elastomers such as polyolefin-based and polyester-based, and ethylene-vinyl acetate copolymer and polyester. Synthetic resins having rubber elasticity such as urethane, polybutadiene, and soft polyvinyl chloride can be mentioned. The thickness of such a rubber-like organic elastic layer is, for example, 1 to 500 μm.

As described above, the partial encapsulant layer 20 in the semiconductor process sheet The thickness of the partial sealing agent layer 20 is, for example, 1 to 300 μm.

The partial encapsulant layer 20 may be a chip electrode embedding adhesive layer for embedding chip electrodes of a semiconductor chip, which is an element of a semiconductor package that is a manufacturing object. That is, the semiconductor process sheet The thickness of the partial encapsulant layer 20, which is an adhesive layer for chip electrode embedding, is preferably 1 to 300 μm, more preferably 5 to 250 μm, and still more preferably 10 to 200 μm. In addition, the ratio of the thickness of the partial encapsulant layer 20, which is an adhesive layer for chip electrode embedding, to the height of the chip electrode to be embedded is preferably 0.1 to 10, more preferably 0.2 to 9.

The partial sealing agent layer 20 has a composition containing, for example, a thermosetting resin and a thermoplastic resin as resin components. Alternatively, the partial sealing agent layer 20 may have a composition containing as a resin component a thermoplastic resin with a thermosetting functional group that can react with the curing agent and cause bonding. The semiconductor process sheet

When the partial sealant layer 20 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, and silicone resin. and thermosetting polyimide resin. The partial sealing agent layer 20 may contain one type of thermosetting resin or may contain two or more types of thermosetting resin. Epoxy resin is preferable as a thermosetting resin in the partial encapsulant layer 20 because it tends to have a low content of ionic impurities that may cause corrosion of the semiconductor chip. Additionally, as a curing agent for making the epoxy resin exhibit thermosetting properties, a phenol resin is preferable.

Examples of epoxy resins include bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin, brominated bisphenol A-type epoxy resin, hydrogenated bisphenol A-type epoxy resin, bisphenol AF-type epoxy resin, and biphenyl type. 2, such as epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, ortho-cresol novolak type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin. Examples include functional epoxy resins and multi-functional epoxy resins. Examples of the epoxy resin include hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin, and glycidyl amine type epoxy resin. In addition, the partial sealing agent layer 20 may contain one type of epoxy resin or may contain two or more types of epoxy resin.

The phenol resin acts as a curing agent for the epoxy resin, and examples of such phenol resins include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak. Novolak-type phenolic resins such as resins can be mentioned. Additionally, examples of the phenol resin include resol-type phenol resins and polyoxystyrenes such as polyparaoxystyrene. Particularly preferable phenol resins in the partial sealing agent layer 20 are phenol novolak resins and phenol aralkyl resins. In addition, the partial sealing agent layer 20 may contain one type of phenol resin or two or more types of phenol resin as a curing agent for epoxy resin.

When the partial encapsulant layer 20 contains an epoxy resin and a phenol resin as its curing agent, the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, relative to 1 equivalent of the epoxy group in the epoxy resin. In proportion, both resins are combined. Such a configuration is preferable for sufficiently advancing the curing reaction of the epoxy resin and phenol resin in curing the partial encapsulant layer 20.

From the viewpoint of appropriately curing the partial sealing agent layer 20, the content ratio of the thermosetting resin in the partial sealing agent layer 20 is preferably 5 to 60 mass%, more preferably 10 to 50 mass%.

The thermoplastic resin in the partial sealing agent layer 20 serves, for example, as a binder function. When the partial sealing agent layer 20 has a composition containing a thermosetting resin and a thermoplastic resin, the thermoplastic resin includes, for example, an acrylic resin. , natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6 - Examples include polyamide resins such as nylon and 6,6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamide imide resins, and fluororesins. The partial sealing agent layer 20 may contain one type of thermoplastic resin, or may contain two or more types of thermoplastic resin. Acrylic resin has few ionic impurities and has high heat resistance, so it is preferable as a thermoplastic resin in the partial sealing agent layer 20.

When the partial sealing agent layer 20 contains an acrylic resin as a thermoplastic resin, the acrylic polymer constituting the acrylic resin preferably contains the largest amount of monomer units derived from (meth)acrylic acid ester in terms of mass ratio. Examples of (meth)acrylic acid esters for forming the monomer unit of the acrylic polymer include alkyl (meth)acrylic acid, cycloalkyl (meth)acrylic acid, and aryl (meth)acrylic acid. Examples of alkyl (meth)acrylic acid include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, and pentyl ester of (meth)acrylic acid. Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, Hexadecyl ester, octadecyl ester, and eicosyl ester. Examples of (meth)acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth)acrylic acid. Examples of aryl (meth)acrylate include phenyl (meth)acrylate and benzyl (meth)acrylate. As a monomer for forming a monomer unit of an acrylic polymer, one type of (meth)acrylic acid ester may be used, or two or more types of (meth)acrylic acid ester may be used. Additionally, such an acrylic polymer can be obtained by polymerizing the raw material monomers for forming it. Examples of polymerization methods include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The acrylic polymer may contain a monomer unit derived from one or two or more types of other monomers copolymerizable with (meth)acrylic acid ester in order to improve its cohesion or heat resistance. Other such monomers include, for example, carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. . Examples of the carboxylic acid-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of acid anhydride monomers include maleic anhydride and itaconic anhydride. Examples of hydroxyl group-containing monomers include 2-hydroxyethyl (meth)acrylic acid, 2-hydroxypropyl (meth)acrylic acid, 4-hydroxybutyl (meth)acrylic acid, and 6-hydroxyhexyl (meth)acrylic acid. , 8-hydroxyoctyl (meth)acrylic acid, 10-hydroxydecyl (meth)acrylic acid, 12-hydroxylauryl (meth)acrylic acid, and (4-hydroxymethylcyclohexyl)methyl (meth)acrylic acid. . Examples of epoxy group-containing monomers include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of monomers containing sulfonic acid groups include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, and (meth)acrylic acid. Royloxynaphthalenesulfonic acid can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethyl acryloyl phosphate.

When the partial sealing agent layer 20 has a composition containing a thermoplastic resin containing a thermosetting functional group, for example, an acrylic resin containing a thermosetting functional group can be used as the thermoplastic resin. The acrylic polymer for forming this thermosetting functional group-containing acrylic resin preferably contains the largest proportion by mass of monomer units derived from (meth)acrylic acid ester. As such a (meth)acrylic acid ester, for example, a (meth)acrylic acid ester similar to that described above can be used as a constitutive monomer of the acrylic polymer for forming the acrylic resin contained in the partial sealing agent layer 20. On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include glycidyl group, carboxy group, hydroxy group, and isocyanate group. Among these, glycidyl group and carboxy group can be suitably used. That is, as the thermosetting functional group-containing acrylic resin, an acrylic polymer containing a glycidyl group or an acrylic polymer containing a carboxy group can be suitably used. Additionally, depending on the type of thermosetting functional group in the thermosetting functional group-containing acrylic resin, a curing agent that can react with the thermosetting functional group is selected. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, a phenolic resin similar to that described above as a curing agent for epoxy resin can be used as the curing agent.

The composition for forming the partial encapsulant layer 20 preferably contains a thermosetting catalyst. The addition of a thermosetting catalyst to the composition for forming a partial sealing agent layer is preferable in order to sufficiently advance the curing reaction of the resin component in curing the partial sealing agent layer 20 or to increase the curing reaction rate. Examples of such thermal curing catalysts include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogenborane-based compounds. Imidazole-based compounds include, for example, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methyl. Imidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl- 2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'- Methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methyl imidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5- and hydroxymethylimidazole. Examples of triphenylphosphine-based compounds include triphenylphosphine, tri(butylphenyl)phosphine, tri(p-methylphenyl)phosphine, tri(nonylphenyl)phosphine, diphenyltolylphosphine, and tetraphenylphosphine. Examples include phonium bromide, methyltriphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. Triphenylphosphine-based compounds also include compounds having both a triphenylphosphine structure and a triphenylborane structure. Such compounds include, for example, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. . Examples of amine-based compounds include monoethanolamine trifluoroborate and dicyandiamide. Examples of trihalogenborane-based compounds include trichloroborane. The composition for forming a partial sealing agent layer may contain one type of heat-curing catalyst, or may contain two or more types of heat-curing catalyst.

The partial sealant layer 20 may contain filler. The addition of filler to the partial sealing agent layer 20 is preferable in adjusting the physical properties of the partial sealing agent layer 20, such as elastic modulus, yield point strength, and breaking elongation. Examples of fillers include inorganic fillers and organic fillers. Constituent materials of the inorganic filler include, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and crystalline silica. and amorphous silica. Constituent materials of the inorganic filler include simple metals such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon, and graphite. Constituent materials of the organic filler include, for example, polymethyl methacrylate (PMMA), polyimide, polyamide imide, polyether ether ketone, polyether imide, and polyester imide. The partial sealing agent layer 20 may contain one type of filler, or may contain two or more types of filler. The filler may have various shapes such as spherical shape, needle shape, or flake shape. When the partial sealing agent layer 20 contains a filler, the average particle diameter of the filler is preferably 0.002 to 10 μm, more preferably 0.05 to 1 μm. A configuration in which the average particle diameter of the filler is 10 μm or less is suitable for obtaining a sufficient filler addition effect in the partial sealing agent layer 20 and ensuring heat resistance. The average particle diameter of the filler can be determined, for example, using a photometric particle size distribution meter (product name "LA-910", manufactured by Horiba Corporation). In addition, when the partial sealing agent layer 20 contains a filler, the content of the filler is preferably 10 mass% or more, more preferably 15 mass% or more, and even more preferably 20 mass% or more. The copper content is preferably 50 mass% or less, more preferably 47 mass% or less, and even more preferably 45 mass% or less.

The partial encapsulant layer 20 contains a colorant in this embodiment. The colorant may be a pigment or a dye. Examples of colorants include black colorants, cyan colorants, magenta colorants, and yellow colorants. Examples of black colorants include azo pigments such as copper oxide, manganese dioxide, azomethine azo black, aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite, magnetite, chromium oxide, iron oxide, Examples include molybdenum disulfide, complex oxide-based black dyes, anthraquinone-based organic black dyes, and azo-based organic black dyes. As a black colorant, C.I. Solvent Black 3, Copper 7, Copper 22, Copper 27, Copper 29, Copper 34, Copper 43 and Copper 70 are also included. As a black colorant, C.I. Direct Black 17, Dong 19, Dong 22, Dong 32, Dong 38, Dong 51 and Dong 71 can also be mentioned. As a black colorant, C.I. Acid Black 1, Copper 2, Copper 24, Copper 26, Copper 31, Copper 48, Copper 52, Copper 107, Copper 109, Copper 110, Copper 119, and Copper 154. As a black colorant, C.I. Disperse Black 1, Copper 3, Copper 10, and Copper 24 are also included. As a black colorant, C.I. Pigment Black 1 and Copper 7 can also be mentioned. The partial sealing agent layer 20 may contain one type of coloring agent or may contain two or more types of coloring agents. Moreover, the content of the colorant in the partial sealing agent layer 20 is, for example, 0.5% by weight or more, preferably 1% by weight or more, and more preferably 2% by weight or more. The copper content is, for example, 10% by weight or less, preferably 8% by weight or less, and more preferably 5% by weight or less.

The partial sealing agent layer 20 may contain one type or two or more types of other components as needed. Examples of the other components include flame retardants, silane coupling agents, and ion trap agents. Examples of flame retardants include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Silane coupling agents include, for example, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxy. Silane can be mentioned. Examples of ion trapping agents include hydrotalcite, bismuth hydroxide, antimony hydroxide (e.g., “IXE-300” manufactured by Toa Synthetic Co., Ltd.), and zirconium phosphate with a specific structure (e.g., Doa Synthetic Co., Ltd.) “IXE-100” manufactured by Synthesis Co., Ltd.), magnesium silicate (e.g. “Kyowad 600” manufactured by Kyowa Chemical Industry Co., Ltd.) and aluminum silicate (e.g. “Kyowad 700” manufactured by Kyowa Chemical Industry Co., Ltd.) can be mentioned. Compounds that can form complexes between metal ions can also be used as ion trapping agents. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Among these, triazole-based compounds are preferable from the viewpoint of stability of the complex formed between metal ions. Such triazole-based compounds include, for example, 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzotriazole, 2 -(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy- 3-t-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-5 -t-octylphenyl)benzotriazole, 6-(2-benzotriazolyl)-4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1-( 2,3-dihydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-t -pentyl-6-{(H-benzotriazol-1-yl)methyl}phenol, 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, octyl-3-[3- t-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-ethylhexyl-3-[3-t-butyl-4-hydroxy -5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl) -4-(1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-t-butylphenol, 2-(2-hydroxy-5-methylphenyl ) Benzotriazole, 2-(2-hydroxy-5-t-octylphenyl)-benzotriazole, 2-(3-t-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole , 2-(2-hydroxy-3,5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chlorobenzotriazole , 2-[2-hydroxy-3,5-di(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazole-2 -yl)-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzo triazole and methyl-3-[3-(2H-benzotriazol-2-yl)-5-t-butyl-4-hydroxyphenyl]propionate. Additionally, certain hydroxyl group-containing compounds such as quinol compounds, hydroxyanthraquinone compounds, and polyphenol compounds can also be used as an ion trap agent. Specific examples of such hydroxyl group-containing compounds include 1,2-benzenediol, alizarin, anthrarupine, tannin, gallic acid, methyl gallate, and pyrogallol.

In the semiconductor process sheet Regarding the peel adhesion (first adhesive force) in the peel test, the adhesive surface 10a of the double-sided adhesive sheet 10 was tested under the conditions of 23°C, peel angle 180°, and tensile speed 300 mm/min. The value of the ratio of the peeling adhesive force (second adhesive force) to the stainless steel plane is preferably 0.003 to 3, more preferably 0.004 to 2.5.

The above first adhesive force can be measured using a tensile tester (brand name “Autograph AG-X”, manufactured by Shimadzu Corporation). The manufacturing method and measurement method of the test piece used for the measurement are specifically as follows. First, a single-sided adhesive tape (brand name “BT-315”, manufactured by Nitto Electric Co., Ltd.) is bonded to the surface of the semiconductor process sheet (X) on the side of the partial sealing agent layer 20. This bonding is performed by pressing a 2 kg hand roller in one reciprocation. Next, a test piece of 20 mm in width x 100 mm in length having a laminated structure of a semiconductor process sheet . Then, a peeling test was performed on the test piece using a tensile tester (brand name "Autograph AG- The peel adhesive force (first adhesive force) between the adhesive surface 10b of the double-sided adhesive sheet 10 in the sheet X and the partial sealant layer 20 thereon is measured.

The second adhesive strength can be measured using a tensile tester (brand name “Autograph AG-X”, manufactured by Shimadzu Corporation). The manufacturing method and measurement method of the test piece used for the measurement are specifically as follows. First, a test piece with a size of 20 mm in width x 100 mm in length is cut out from the double-sided adhesive sheet 10 without the partial sealant layer 20. Next, this test piece is bonded to the stainless steel plate at its adhesive surface 10a. This bonding is performed by pressing a 2 kg hand roller in one reciprocation. Then, a peeling test was performed on the test piece using a tensile tester (brand name "Autograph AG- The peel adhesive force (second adhesive force) of the adhesive surface 10a of the double-sided adhesive sheet 10 in the sheet X to the stainless steel plate is measured.

The semiconductor process sheet It may be produced by bonding to the adhesive surface 10b side of a separately manufactured double-sided adhesive sheet 10. The double-sided adhesive sheet 10 may be manufactured by forming the adhesive layers 12 and 13 on the substrate 11, and the adhesive layer 12 formed on the separator and the adhesive layer 13 formed on another separator are formed on the substrate 11. ) may be produced by bonding to each other. Each layer can be formed, for example, by applying and drying a predetermined composition prepared for each layer.

2 to 7 show a semiconductor package manufacturing method according to an embodiment of the present invention. This manufacturing method is a method for manufacturing a semiconductor package using a semiconductor process sheet Includes reorganization process.

First, in the chip mounting process, as shown in FIGS. 2(a) and 2(b), the partial encapsulant layer in the semiconductor process sheet Regarding (20), a plurality of semiconductor chips (C) are mounted. The support S is, for example, made of metal, glass, or transparent resin. The semiconductor chip C has a chip body and chip electrodes E extending from the chip body. In this embodiment, face-down mounting is performed with the chip electrode E of the semiconductor chip C facing the partial sealing agent layer 20. Preferably, the chip electrode E of the semiconductor chip C enters the partial encapsulant layer 20 in the semiconductor process sheet X and reaches the adhesive surface 10b of the double-sided adhesive sheet 10. , each semiconductor chip (C) is mounted with respect to the partial encapsulant layer (20).

Next, in the encapsulation process, as shown in FIG. 3(a), the encapsulant 30' is supplied to embed a plurality of semiconductor chips C on the semiconductor process sheet X, and thereafter, in FIG. As shown in 3(b), the encapsulant 30' and the partial encapsulant layer 20 are cured to form the encapsulant portion 30. As a result, the package P (chip embedding encapsulating material portion) as the encapsulating material portion 30 accompanying the semiconductor chip C is obtained. The encapsulant 30' is a composition containing, for example, a curing agent such as an epoxy resin or phenol resin, an inorganic filler, a curing accelerator, and a black colorant, and in the encapsulation process, it can be used in any form of a liquid composition, powder, or sheet. It may be supplied. As a constituent material of such a sealant 30', for example, a material similar to that described above as a constituent material of the partial sealant layer 20 of the semiconductor process sheet X can be used. In this process, the heating temperature for forming the sealing material portion 30 is, for example, 150 to 185°C, and the heating time is, for example, 60 seconds to several hours.

In the present manufacturing method, after the chip mounting process described above with reference to FIG. 2 and before supply of the encapsulant 30' onto the semiconductor process sheet The second layer 20 may be cured (curing process). In this case, in the encapsulation process, first, as shown in FIG. 4(b), the encapsulant 30' is supplied to embed the plurality of semiconductor chips C on the semiconductor process sheet X, and then , the encapsulant 30' is cured on the cured portion encapsulant layer 20, and the encapsulant portion 30 is formed as shown in FIG. 3(b). According to this configuration, the encapsulation process is performed with the holding power of the semiconductor chip C by the semiconductor process sheet Accordingly, this configuration is suitable for suppressing misalignment of the semiconductor chip C due to shrinkage during curing of the encapsulant 30' in the encapsulation process. Such suppression of semiconductor chip positional deviation is desirable, for example, in forming the wiring structure including the wiring for each semiconductor chip C with high precision in a later wiring formation process.

Next, in the detach process, as shown in FIG. 5(a), the support state of the package P by the support S is released. In this process, for example, the semiconductor process sheet ) is separated from Alternatively, after the package P is peeled off from the double-sided adhesive sheet 10 on the support S, the double-sided adhesive sheet 10 is peeled off from the support S.

When the adhesive layer 12 (adhesion reduction type adhesive layer) of the double-sided adhesive sheet 10 in the semiconductor process sheet By lowering the adhesive force of the adhesive surface 10a, the support S and the double-sided adhesive sheet 10 can be separated. The heating temperature for this is, for example, 170 to 200°C.

When the adhesive layer 12 (adhesion reduction type adhesive layer) of the double-sided adhesive sheet 10 in the semiconductor process sheet By irradiation, the adhesive force of the adhesive layer 12 to the adhesive surface 10a is reduced, and the support S and the double-sided adhesive sheet 10 can be separated. When the radiation irradiation for this is ultraviolet ray irradiation, the irradiation amount is, for example, 50 to 500 mJ/cm ² .

In the above-described chip mounting process in face down, when the chip electrode E of the semiconductor chip C does not reach the adhesive surface 10b of the double-sided adhesive sheet 10 of the semiconductor process sheet After the attach process, the encapsulant portion 30 is subjected to grinding processing to expose the chip electrode E of each semiconductor chip C within the encapsulant portion 30 to the outside.

Next, in the wiring forming process, as shown in FIG. 5(b), a wiring structure portion 40 including wiring for each semiconductor chip C is formed on the encapsulating material portion 30 to the package P. . The wiring for each semiconductor chip C includes external electrodes 41 such as bump electrodes in each semiconductor package manufactured for each semiconductor chip C by this manufacturing method.

Next, in the thinning process, after the back grind tape Y is bonded to the wiring structure portion 40 side as shown in FIG. 6(a), it is attached to the sealing material portion 30 as shown in FIG. 6(b). Grinding processing is performed to thin the package P. The back grind tape Y has an adhesive layer Ya of a thickness capable of embedding the external electrode 41 of the wiring structure 40. In this process, for example, grinding processing is performed on the encapsulating material portion 30 so that the so-called back surface (upper surface in FIG. 6) of the semiconductor chip C is exposed.

Next, as shown in FIG. 7(a), the dicing tape-integrated back side protective film Z is bonded to the package P held by the back grind tape Y. The dicing tape integrated backside protection film (Z) includes a dicing tape (50) having an adhesive layer and a curable film (60) for protecting the backside of the semiconductor chip on the adhesive layer, and the grinding surface of the package (P). With respect to this, the film 60 side of the dicing tape integrated back surface protective film Z is bonded. The film 60 for protecting the back side of the semiconductor chip is an adhesive film mixed with a colorant such as a black colorant. As the colorant for the film 60, for example, a colorant similar to that described above as the colorant for the partial sealing agent layer 20 can be used. Additionally, the film 60 may be a heat-curing type adhesive film, for example, a non-curing type adhesive capable of developing sufficient adhesion to the adherend by bonding it to the adherend under temperature conditions of about 70°C. It can be film.

Next, the back grind tape (Y) is removed. When the film 60 is a heat-curing type adhesive film, after removal of the back grind tape Y, the film 60 is heat-cured as shown in FIG. 7(b).

Next, in the segmentation process, as shown in FIG. 7(c), the encapsulation material portion 30 and the wiring structure portion 40 are divided for each semiconductor chip C by, for example, blade dicing ( FIG. 7(c) In c), the division point is schematically indicated by a thick line). Each semiconductor package separated into pieces in this way is then picked up from the dicing tape 50.

As described above, a semiconductor package can be manufactured using the semiconductor process sheet (X). This semiconductor package manufacturing method is suitable for efficiently manufacturing semiconductor packages. The reason is as follows.

When manufacturing a semiconductor package using a conventional semiconductor process sheet consisting of a double-sided adhesive sheet without a partial encapsulant layer 20, in the chip mounting process, a double-sided surface with one side bonded to the support S A plurality of semiconductor chips C are mounted on the other side of the adhesive sheet. At this time, face-up mounting is performed to bond the side of the semiconductor chip C opposite to the chip electrode E to the double-sided adhesive sheet. Next, on the double-sided adhesive sheet, a sealing material portion that embeds a plurality of semiconductor chips (C) is formed. Next, the double-sided adhesive sheet is peeled from the encapsulating material portion (conventional chip embedding encapsulating material portion) accompanying the plurality of semiconductor chips C (detach process). In the conventional chip embedding encapsulation material, the so-called back side of each semiconductor chip C is exposed on the side from which the double-sided adhesive sheet was peeled. Next, in such a sealing material portion, a predetermined resin sheet is bonded to the surface on the side from which the double-sided adhesive sheet was peeled. As described above, the back side of each semiconductor chip C is exposed on the side from which the double-sided adhesive sheet has been peeled off in the encapsulating material portion, and since the symmetry in the thickness direction of the encapsulating material portion is low, the encapsulating material portion is unavoidable. It turns into an enemy. In a state where such bending occurs, subsequent processes cannot proceed properly. Therefore, in the semiconductor package manufacturing method in which a conventional semiconductor process sheet made of a double-sided adhesive sheet is used, after the detach process, a predetermined resin sheet is bonded to the side of the sealing material portion from which the double-sided adhesive sheet was peeled, It is necessary to perform so-called warpage (bending) control on the conventional chip embedding encapsulation material.

In contrast, in the semiconductor package manufacturing method according to the present invention, a special process for warpage control for the package P (chip embedding encapsulation material 30) that has undergone the detach process described above with reference to FIG. 5(a) is not required. This is because, in this manufacturing method, a semiconductor process sheet (X) carrying a partial encapsulant layer (20) on a double-sided adhesive sheet (10) is used. Specifically, in the chip mounting process described above with reference to FIG. 2, a plurality of semiconductor chips C are mounted on the partial encapsulant layer 20 of the semiconductor process sheet An encapsulant 30 is formed of an encapsulant 30' provided to embed the chip C and a partial encapsulant layer 20 or a cured partial encapsulant layer 20, and the chip-embedding encapsulant formed in this way ( 30) (Package P) has higher symmetry in the thickness direction than the above-mentioned conventional chip embedding encapsulating material portion, and is suitable for suppressing warping. This manufacturing method, which does not require a process for warpage control of the chip embedding encapsulation material 30 or the package P, is suitable for efficiently manufacturing a semiconductor package.

As described above, the semiconductor process sheet (X) and the semiconductor package manufacturing method using it are suitable for efficiently manufacturing a semiconductor package.

In the chip mounting process of the present embodiment, as described above, preferably, the chip electrode E of the semiconductor chip C enters the partial encapsulant layer 20 in the semiconductor process sheet Each semiconductor chip C is mounted against the partial encapsulant layer 20 so as to reach the adhesive surface 10b of the adhesive sheet 10. In this case, in the subsequent wiring forming process, the wiring structure portion 40 including a wiring electrically connected to the chip electrode E already exposed on the surface of the encapsulating material portion 30 is formed. According to these configurations, when a face-up chip mounting process as described later is performed, the wiring structure portion 40 can be appropriately formed without performing a grinding process for the encapsulating material portion 30 required before the wiring forming process. Therefore, this configuration is desirable for efficiently manufacturing semiconductor packages.

In the chip mounting process in the semiconductor package manufacturing method of the present invention, instead of mounting from the face down, the semiconductor chip (C) is placed on the side opposite to the chip electrode (E) in the chip body with a partial encapsulant layer ( The semiconductor chip C may be mounted on the partial encapsulant layer 20 so as to be bonded to the semiconductor chip C 20). In this case, the semiconductor package manufacturing method, which involves a grinding process of exposing the chip electrodes E of the semiconductor chip C by grinding the encapsulation material 30 after the detach process described above with reference to FIG. 5(a), is further In the wiring forming process described above with reference to FIG. 5(b), the wiring structure portion 40 including a wiring electrically connected to the chip electrode E exposed on the surface of the encapsulating material portion 30. is formed According to this configuration, the wiring structure portion 40 can be appropriately formed.

In summary of the above, the configuration of the present invention and its variations are listed below as an appendix.

〔Appendix 1〕

A double-sided adhesive sheet having a laminated structure including at least a reduced adhesive force type adhesive layer, an adhesive layer, and a substrate positioned between them, and having a first adhesive surface and a second adhesive surface opposite to the adhesive layer,

A semiconductor process sheet comprising a partial encapsulant layer in peelable contact with the second adhesive surface of the double-sided adhesive sheet.

〔Appendix 2〕

The semiconductor process sheet according to Appendix 1, wherein the partial encapsulant layer is an adhesive layer for chip electrode embedding.

〔Appendix 3〕

The semiconductor process sheet according to Appendix 2, wherein the ratio of the thickness of the adhesive layer for chip electrode embedding to the height of the chip electrode to be embedded is 0.1 to 10 or 0.2 to 9.

〔Appendix 4〕

The semiconductor process sheet according to any one of Appendices 1 to 3, wherein the partial encapsulant layer has a thickness of 1 to 300 μm, 5 to 250 nm, or 10 to 200 nm.

〔Appendix 5〕

The semiconductor process sheet according to any one of Appendices 1 to 4, wherein the adhesive force-reducing adhesive layer is a heat-foamable adhesive layer or a radiation-curable adhesive layer.

〔Appendix 6〕

The adhesive force-reducing adhesive layer is located closer to the first adhesive surface than the substrate in the laminated structure,

The semiconductor process sheet according to any one of Appendices 1 to 5, wherein the adhesive layer is located on a side of the second adhesive face rather than the substrate in the laminated structure.

〔Appendix 7〕

The peel adhesive strength of the double-sided adhesive sheet between the second adhesive surface of the double-sided adhesive sheet and the partial encapsulant layer in a peel test under conditions of 23° C., a peel angle of 180°, and a tensile speed of 300 mm/min. In a peel test under the conditions of 23°C, peel angle of 180°, and tensile speed of 300 mm/min, the value of the ratio of peel adhesion to the stainless steel plane is 0.003 to 3 or 0.004 to 2.5, see Appendix. The semiconductor process sheet according to any one of 1 to 6.

〔Appendix 8〕

A method for manufacturing a semiconductor package using the semiconductor process sheet described in any one of Appendices 1 to 7,

a chip mounting step of mounting a plurality of semiconductor chips on the partial encapsulant layer of the semiconductor process sheet, the first adhesive surface side of which is bonded to a support;

an encapsulation step of supplying an encapsulant to embed the plurality of semiconductor chips on the semiconductor process sheet and curing the encapsulant and the partial encapsulant layer to form an encapsulant portion;

A detach process including separating the encapsulant portion and the second adhesive surface,

a wiring forming step of forming a wiring structure including wiring for each semiconductor chip on the encapsulating material portion;

A method of manufacturing a semiconductor package including a separation process of dividing the encapsulation material and the wiring structure for each semiconductor chip to obtain a semiconductor package.

〔Appendix 9〕

A method for manufacturing a semiconductor package using the semiconductor process sheet described in any one of Appendices 1 to 7,

a chip mounting step of mounting a plurality of semiconductor chips on the partial encapsulant layer of the semiconductor process sheet, the first adhesive surface side of which is bonded to a support;

A curing process of curing the partial encapsulant layer,

An encapsulation step of supplying an encapsulant to embed the plurality of semiconductor chips on the semiconductor process sheet and curing the encapsulant on the cured partial encapsulant layer to form an encapsulant portion;

A detach process including separating the encapsulant portion and the second adhesive surface,

A wiring forming step of forming a wiring structure including wiring for each semiconductor chip on the encapsulating material portion;

A method of manufacturing a semiconductor package including a separation process of dividing the encapsulation material and the wiring structure for each semiconductor chip to obtain a semiconductor package.

〔Note 10〕

The semiconductor chip has a chip body and at least one chip electrode extending from the chip body,

In the chip mounting process, each semiconductor chip is mounted with respect to the partial encapsulating agent layer so that the chip electrode enters the partial encapsulating agent layer. The semiconductor package manufacturing method according to Supplementary Note 8 or 9.

〔Appendix 11〕

In the chip mounting step, each semiconductor chip is mounted with respect to the partial encapsulant layer so that the chip electrode enters the partial encapsulant layer and reaches the second adhesive surface. The semiconductor package manufacturing method according to Supplementary Note 10.

〔Appendix 12〕

The semiconductor package manufacturing method according to Supplementary Note 11, wherein in the wiring forming step, a wiring structure portion including a wiring electrically connected to the chip electrode exposed on the surface of the encapsulating material portion is formed.

〔Appendix 13〕

The semiconductor chip has a chip body and at least one chip electrode extending from the chip body,

In the chip mounting process, each semiconductor chip is mounted on the partial encapsulant layer so that the side of the chip body opposite to the chip electrode is bonded to the partial encapsulant layer. The semiconductor package according to Supplementary Note 8 or 9. Manufacturing method.

〔Appendix 14〕

After the detach process, it further includes a process of exposing the chip electrode of the semiconductor chip by grinding the encapsulation material,

The semiconductor package manufacturing method according to Supplementary Note 13, wherein in the wiring forming step, a wiring structure portion including a wiring electrically connected to the chip electrode exposed on the surface of the encapsulating material portion is formed.

〔Note 15〕

The semiconductor package manufacturing method according to any one of Appendices 8 to 14, wherein the detach process includes measures to reduce adhesion to the adhesion reduction type adhesive layer in the semiconductor process sheet.

X Semiconductor Process Sheet
10 Double-sided adhesive sheet
10a, 10b adhesive side
11 listed
12 Adhesive layer (reduced adhesion type adhesive layer)
13 Adhesive layer
20 partial encapsulant layer
30' bag
30 bag wealth
40 wiring structure
41 external electrode
C semiconductor chip
P package

Claims (15)

A double-sided adhesive sheet having a laminated structure including at least a reduced adhesive force type adhesive layer, an adhesive layer, and a substrate positioned between them, and having a first adhesive surface and a second adhesive surface opposite to the adhesive layer,
A semiconductor process sheet comprising a partial encapsulant layer peelable and in close contact with the second adhesive surface of the double-sided adhesive sheet,
The adhesive force-reducing adhesive layer is located closer to the first adhesive surface than the substrate in the laminated structure,
The semiconductor process sheet, wherein the adhesive layer is located on a side of the second adhesive face rather than the substrate in the laminated structure. According to claim 1,
A semiconductor process sheet, wherein the partial encapsulant layer is an adhesive layer for chip electrode embedding. According to claim 2,
A semiconductor process sheet, wherein the ratio of the thickness of the adhesive layer for chip electrode embedding to the height of the chip electrode to be embedded is 0.1 to 10. According to claim 1,
A semiconductor process sheet, wherein the partial encapsulant layer has a thickness of 1 to 300 μm. According to claim 1,
The semiconductor process sheet wherein the adhesive force reduction type adhesive layer is a heat foamable adhesive layer or a radiation curable adhesive layer. According to claim 1,
The peel adhesive strength of the double-sided adhesive sheet between the second adhesive surface of the double-sided adhesive sheet and the partial encapsulant layer in a peel test under conditions of 23° C., a peel angle of 180°, and a tensile speed of 300 mm/min. A semiconductor process sheet wherein the ratio of the peel adhesive force shown by the first adhesive surface to the stainless steel plane in a peel test under the conditions of 23°C, a peel angle of 180°, and a tensile speed of 300 mm/min is 0.003 to 3. A method for manufacturing a semiconductor package using the semiconductor process sheet according to any one of claims 1 to 6, comprising:
A chip mounting step of mounting a plurality of semiconductor chips on the partial encapsulant layer of the semiconductor process sheet, the first adhesive surface side of which is bonded to a support body;
an encapsulation step of supplying an encapsulant to embed the plurality of semiconductor chips on the semiconductor process sheet and curing the encapsulant and the partial encapsulant layer to form an encapsulant portion;
A detach process including separating the encapsulant portion and the second adhesive surface,
a wiring forming step of forming a wiring structure including wiring for each semiconductor chip on the encapsulating material portion;
A method of manufacturing a semiconductor package including a separation process of dividing the encapsulation material and the wiring structure for each semiconductor chip to obtain a semiconductor package. A method for manufacturing a semiconductor package using the semiconductor process sheet according to any one of claims 1 to 6, comprising:
a chip mounting step of mounting a plurality of semiconductor chips on the partial encapsulant layer of the semiconductor process sheet, the first adhesive surface side of which is bonded to a support;
A curing process of curing the partial encapsulant layer,
An encapsulation step of supplying an encapsulant to embed the plurality of semiconductor chips on the semiconductor process sheet and curing the encapsulant on a cured partial encapsulant layer to form an encapsulant portion;
A detach process including separating the encapsulant portion and the second adhesive surface,
a wiring forming step of forming a wiring structure including wiring for each semiconductor chip on the encapsulating material portion;
A method of manufacturing a semiconductor package including a separation process of dividing the encapsulation material and the wiring structure for each semiconductor chip to obtain a semiconductor package. According to claim 7,
The semiconductor chip has a chip body and at least one chip electrode extending from the chip body,
In the chip mounting process, each semiconductor chip is mounted with respect to the partial encapsulant layer so that the chip electrode enters the partial encapsulant layer. According to clause 9,
In the chip mounting process, each semiconductor chip is mounted with respect to the partial encapsulant layer so that the chip electrode enters the partial encapsulant layer and reaches the second adhesive surface. According to claim 10,
In the wiring forming process, a wiring structure portion including a wiring electrically connected to the chip electrode exposed on the surface of the encapsulating material portion is formed. According to claim 7,
The semiconductor chip has a chip body and at least one chip electrode extending from the chip body,
In the chip mounting step, each semiconductor chip is mounted on the partial encapsulant layer so that the side of the chip body opposite to the chip electrode is bonded to the partial encapsulant layer. According to claim 12,
After the detach process, it further includes a process of exposing the chip electrode of the semiconductor chip by grinding the encapsulation material,
In the wiring forming process, a wiring structure portion including a wiring electrically connected to the chip electrode exposed on the surface of the encapsulating material portion is formed. According to claim 7,
The method of manufacturing a semiconductor package, wherein the detach process includes measures to reduce adhesion to the adhesion reduction type adhesive layer in the semiconductor process sheet. delete

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