TWI795080B - 接合裝置、接合系統、接合方法及非暫時的電腦可讀取之記錄媒體 - Google Patents
接合裝置、接合系統、接合方法及非暫時的電腦可讀取之記錄媒體 Download PDFInfo
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- TWI795080B TWI795080B TW110142676A TW110142676A TWI795080B TW I795080 B TWI795080 B TW I795080B TW 110142676 A TW110142676 A TW 110142676A TW 110142676 A TW110142676 A TW 110142676A TW I795080 B TWI795080 B TW I795080B
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Abstract
本發明提供一種接合裝置、接合系統、接合方法、程式及電腦記錄媒體,檢查基板的接合處理之狀態,適當地施行該接合處理。將上晶圓WU與下晶圓WL接合之接合裝置,包含:上吸盤140,抽真空而將上晶圓WU吸附保持於底面;下吸盤141,設置於上吸盤140之下方,抽真空而將下晶圓WL吸附保持於頂面;推動構件190,設置於上吸盤140,推壓上晶圓WU之中心部;以及複數之感測器175,設置於上吸盤140,檢測上晶圓WU從上吸盤140的脫離。
Description
本發明係關於一種將基板彼此接合之接合裝置、具備該接合裝置之接合系統、利用該接合裝置之接合方法、程式及電腦記錄媒體。
近年,半導體裝置之高密集化有所進展。在水平面內配置高密集化的複數之半導體裝置,以配線連接此等半導體裝置而予以製品化之情況,配線長度增加,有因此而使配線的電阻變大,或配線延遲變大之疑慮。
因而,前人提出利用三維整合技術,將半導體裝置三維地堆疊。在此三維整合技術中,例如使用專利文獻1所記載之接合系統,施行2片半導體晶圓(下稱「晶圓」)的接合。例如接合系統,具備將晶圓之接合的表面改質之表面改質裝置、使藉由該表面改質裝置改質之晶圓的表面親水化之表面親水化裝置、以及
將表面藉由該表面親水化裝置親水化的晶圓彼此接合之接合裝置。此接合系統,在表面改質裝置中對晶圓的表面施行電漿處理以將該表面改質,進一步在表面親水化裝置中往晶圓的表面供給純水而使該表面親水化後,在接合裝置中藉由凡得瓦力及氫鍵(分子間作用力)將晶圓彼此接合。
上述接合裝置,具備:上吸盤,於底面保持一晶圓(下稱「上晶圓」);下吸盤,設置於上吸盤之下方,於頂面保持另一晶圓(下稱「下晶圓」);以及推動構件,設置於上吸盤,推壓上晶圓之中心部。此一接合裝置,在將保持於上吸盤的上晶圓與保持於下吸盤保持的下晶圓對向配置之狀態下,藉由推動構件推壓上晶圓之中心部與下晶圓之中心部而使其抵接,該中心部彼此接合而形成接合領域。其後,接合領域從晶圓之中心部朝向外周部漸擴大,產生所謂的接合波(bonging wave)。而後,上晶圓與下晶圓接合。
專利文獻1:日本特開2016-039364號公報
為了抑制接合後之重合晶圓的變形,宜使接合波,從晶圓之中心部朝向外周部均等地即同心圓狀地擴大。然而,上述專利文獻1所記載之接合裝置中,並
未進行接合波的監控,即便接合波不均地擴大仍無法掌握。因此,在習知之晶圓的接合處理尚具有改善之餘地。
鑑於此點,本發明之目的在於檢查基板的接合處理之狀態,適當地施行該接合處理。
為了達成上述目的,本發明之接合裝置,將基板彼此接合,其特徵為包含:第1保持部,抽真空而將第1基板吸附保持於底面;第2保持部,設置於該第1保持部之下方,抽真空而將第2基板吸附保持於頂面;推動構件,設置於該第1保持部,推壓第1基板之中心部;以及複數之基板檢測部,設置於該第1保持部,檢測第1基板從該第1保持部的脫離。
依本發明,則可藉由基板檢測部,檢測保持在第1保持部之第1基板從該第1保持部的脫離。若發生此第1基板的脫離,則第1基板往第2基板掉落而抵接,第1基板與第2基板藉由分子間作用力而接合。因此,藉由檢測第1基板的脫離,而可掌握接合波,可檢查晶圓的接合處理之狀態。而例如在接合波均一的情況(接合處理之狀態正常的情況),以維持不變之處理條件繼續接合處理即可。另一方面,例如在接合波不均的情況(接合處理之狀態異常的情況),修正處理條件而施行接合處理即可。因此,依本發明,則可適當地施行基板的接合處理。
依本發明,則可檢查基板的接合處理之狀態,適當地施行上述接合處理。
1:接合系統
2:搬出入站
3:處理站
11:晶圓匣盒載置板
10:晶圓匣盒載置台
20:晶圓搬運部
21:搬運路
22:晶圓搬運裝置
30:表面改質裝置
40:表面親水化裝置
41:接合裝置
50,51:傳送裝置
60:晶圓搬運領域
61:晶圓搬運裝置
70:控制部
101:搬出入口
102:開閉閘門
103:內壁
104:搬出入口
110:過渡區
111:晶圓搬運機構
120:位置調節機構
121:基台
122:檢測部
130:反轉機構
131:保持臂
132:保持構件
133:驅動部
134:支持柱
140:上吸盤
141:下吸盤
150:上吸盤保持部
151:上部拍攝部
160:下吸盤平台
161:下部拍攝部
162,165:下吸盤移動部
163:支持台
164,166:軌道
167:載置台
170:本體部
171:銷
172,173,174:抽吸部
172a,173a,174a:抽吸管
172b,173b,174b:真空泵
175,175a,175b:感測器
176:貫通孔
180:上吸盤平台
181:支持構件
190:推動構件
191:致動器部
192:壓力缸筒部
200:本體部
201:銷
202:外側凸條
203:內側凸條
204,204a,204b:抽吸領域
205a,205b:抽吸口
206a,206b:抽吸管
207a,207b:真空泵
300:雷射位移計
301:標的
A:接合領域
CU,CL,CT:晶圓匣盒
G1,G2,G3:處理區塊
H:記錄媒體
N:凹口部
S1~S13:步驟
T1:搬運領域
T2:處理領域
WL:下晶圓
WL1:表面
WL2:背面
WT:重合晶圓
WU:上晶圓
WU1:表面
WU2:背面
圖1係顯示本實施形態之接合系統的構成之概要的俯視圖。
圖2係顯示本實施形態之接合系統的內部構成之概要的側視圖。
圖3係顯示上晶圓與下晶圓的構成之概要的側視圖。
圖4係顯示接合裝置的構成之概要的橫剖面圖。
圖5係顯示接合裝置的構成之概要的縱剖面圖。
圖6係顯示上吸盤、上吸盤保持部、及下吸盤的構成之概要的縱剖面圖。
圖7係從下方觀察上吸盤的俯視圖。
圖8係顯示習知之晶圓間的接合領域之擴大樣子的說明圖。
圖9(a)~(b)係顯示感測器的輸出結果之一例的圖表。
圖10係顯示晶圓接合處理之主要步驟的流程圖。
圖11係顯示將上晶圓與下晶圓對向配置之樣子的說明圖。
圖12係顯示推壓上晶圓之中心部與下晶圓之中心部以使其抵接的樣子之說明圖。
圖13係使上晶圓與下晶圓的接合從中心部往外周部擴散之樣子的說明圖。
圖14係使上晶圓的表面與下晶圓的表面抵接之樣子的說明圖。
圖15係使上晶圓與下晶圓接合之樣子的說明圖。
圖16係顯示另一實施形態之感測器的配置之上吸盤的俯視圖。
圖17(a)~(d)係顯示另一實施形態之感測器的配置之上吸盤的俯視圖。
圖18係顯示另一實施形態之上吸盤、上吸盤保持部、及下吸盤的構成之概要的縱剖面圖。
以下,參考附圖,茲就本發明之實施形態予以說明。另,並未藉由以下所示之實施形態限定本發明。
首先,茲就本實施形態之接合系統的構成予以說明。圖1為顯示接合系統1的構成之概要的俯視圖。圖2為顯示接合系統1的內部構成之概要的側視圖。
接合系統1,如圖3所示地例如將2片作為基板的晶圓WU、WL接合。以下,將配置於上側之晶圓,稱作作為第1基板之「上晶圓WU」;將配置於下側之晶圓,稱作作為第2基板之「下晶圓WL」。此外,將上晶圓WU接合之接合面稱作「表面WU1」,將與該表面WU1為相反側的面稱作「背面WU2」。同樣地,將下晶圓WL接合之接合面稱作「表面WL1」,將與該表面WL1為相反側的面稱作「背面WL2」。而接合系統1,將上晶圓WU與下晶圓WL接合,形成作為重合基板的重合晶圓WT。
接合系統1,如圖1所示地例如具有將搬出入站2與處理站3一體化地連接之構成:搬出入站2,在與外部之間,將分別可收納複數片晶圓WU、WL、與複數
片重合晶圓WT的晶圓匣盒CU、CL、CT搬出入;處理站3,具備對晶圓WU、WL、重合晶圓WT施行既定處理的各種處理裝置。
於搬出入站2,設置晶圓匣盒載置台10。於晶圓匣盒載置台10,設置複數片,例如4片晶圓匣盒載置板11。晶圓匣盒載置板11,在水平方向的X方向(圖1中的上下方向)並排而配置為一列。於此等晶圓匣盒載置板11,在對接合系統1之外部將晶圓匣盒CU、CL、CT搬出入時,可載置晶圓匣盒CU、CL、CT。如此地,搬出入站2,構成為可保存複數片上晶圓WU、複數片下晶圓WL、複數片重合晶圓WT。另,晶圓匣盒載置板11的個數,並未限定於本實施形態,可任意設定。此外,亦可將晶圓匣盒之1個作為異常晶圓回收用的晶圓匣盒使用。亦即,作為可將因各種原因而在上晶圓WU與下晶圓WL的接合發生異常之晶圓,與其他正常之重合晶圓WT分離的晶圓匣盒。本實施形態中,將複數之晶圓匣盒CT中之1個晶圓匣盒CT使用在異常晶圓的回收,將其他晶圓匣盒CT使用在正常重合晶圓WT的收納。
於搬出入站2,與晶圓匣盒載置台10鄰接而設置晶圓搬運部20。於晶圓搬運部20,設置可在往X方向延伸之搬運路21上任意移動的晶圓搬運裝置22。晶圓搬運裝置22,亦可在鉛直方向及繞鉛直軸(θ方向)任意移動,可在各晶圓匣盒載置板11上的晶圓匣盒CU、CL、CT,與後述處理站3之第3處理區塊G3的傳送裝置50、51之間,搬運晶圓WU、WL、重合晶圓WT。
於處理站3,設置具備各種裝置之複數個例如3個處理區塊G1、G2、G3。例如於處理站3的正面側(圖1的X方向負方向側),設置第1處理區塊G1;於處理站3
的背面側(圖1的X方向正方向側),設置第2處理區塊G2。此外,於處理站3的搬出入站2側(圖1的Y方向負方向側),設置第3處理區塊G3。
例如於第1處理區塊G1,配置將晶圓WU的表面WU1、晶圓WL的表面WL1改質之表面改質裝置30。表面改質裝置30,例如在減壓氣體環境下,激發處理氣體即氧氣或氮氣而使其電漿化、離子化。對表面WU1、WL1照射此等氧離子或氮離子,將表面WU1、WL1電漿處理,使其改質。
例如於第2處理區塊G2,例如從搬出入站2側在水平方向的Y方向將表面親水化裝置40、以及接合裝置41依序並排配置:表面親水化裝置40,藉由純水使晶圓WU的表面WU1、晶圓WL的表面WL1親水化並清洗該表面WU1、WL1;接合裝置41,將晶圓WU、WL接合。另,關於接合裝置41之構成將於後述內容說明。
表面親水化裝置40,例如使保持在旋轉吸盤之晶圓WU、WL旋轉,並往該晶圓WU、WL上供給純水。如此一來,則供給之純水在晶圓WU的表面WU1、晶圓WL的表面WL1上擴散,使表面WU1、WL1親水化。
例如於第3處理區塊G3,如圖2所示地從下方依序將晶圓WU、WL、重合晶圓WT的傳送裝置50、51設置為2層。
如圖1所示地於第1處理區塊G1~第3處理區塊G3所包圍之領域,形成晶圓搬運領域60。於晶圓搬運領域60,例如配置晶圓搬運裝置61。
晶圓搬運裝置61,例如具備可在鉛直方向、水平方向(Y方向、X方向)及繞鉛直軸任意移動之搬運臂。晶圓搬運裝置61,在晶圓搬運領域60內移動,可將晶圓WU、WL、重合晶圓WT往周圍的第1處理區塊G1、第2處理區塊G2、及第3處理區塊G3內之既定裝置搬運。
於上述接合系統1,如圖1所示地設置控制部70。控制部70,例如為電腦,具備程式收納部(未圖示)。於程式收納部,收納有控制接合系統1之晶圓WU、WL、重合晶圓WT的處理之程式。此外,於程式收納部,亦收納有用於控制上述各種處理裝置或搬運裝置等之驅動系統的運作,以實現接合系統1之後述晶圓接合處理的程式。另,該程式,例如儲存在電腦可讀取的硬碟(HD)、軟性磁碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等電腦可讀取之記錄媒體H,亦可從該記錄媒體H安裝至控制部70。
接著,對上述接合裝置41的構成予以說明。
接合裝置41,如圖4及圖5所示具備內部可密閉之處理容器100。在處理容器100的晶圓搬運領域60側之側面,形成晶圓WU、WL、重合晶圓WT的搬出入口101,於該搬出入口101設置開閉閘門102。
處理容器100之內部,藉由內壁103,區隔為搬運領域T1與處理領域T2。上述搬出入口101,形成在搬運領域T1的處理容器100之側面。此外,於內壁103,亦形成晶圓WU、WL、重合晶圓WT的搬出入口104。
於搬運領域T1的Y方向正方向側,設置用於暫時載置晶圓WU、WL、重合晶圓WT之過渡區110。過渡區110,例如形成為2層,可同時載置晶圓WU、WL、重合晶圓WT之任2者。
於搬運領域T1,設置晶圓搬運機構111。晶圓搬運機構111,例如具備可在鉛直方向、水平方向(X方向、Y方向)及繞鉛直軸任意移動之搬運臂。而晶圓搬運機構111,可在搬運領域T1內,或在搬運領域T1與處理領域T2之間,搬運晶圓WU、WL、重合晶圓WT。
於搬運領域T1的Y方向負方向側,設置調節晶圓WU、WL之水平方向的朝向之位置調節機構120。位置調節機構120,具有:基台121,具備保持晶圓WU、WL而使其旋轉之保持部(未圖示);以及檢測部122,檢測晶圓WU、WL之凹口部的位置。而位置調節機構120中,藉由使保持在基台121之晶圓WU、WL旋轉並以檢測部122檢測晶圓WU、WL之凹口部的位置,而調節該凹口部的位置以調節晶圓WU、WL之水平方向的朝向。另,在基台121中保持晶圓WU、WL之構造並無特別限定,例如使用銷吸盤構造、旋轉吸盤構造等各種構造。
此外,於搬運領域T1,設置使上晶圓WU的表背面反轉之反轉機構130。反轉機構130,具備保持上晶圓WU之保持臂131。保持臂131,在水平方向(X方向)延伸。此外於保持臂131,將保持上晶圓WU之保持構件132例如設置於4處。
保持臂131,例如支持在具備馬達等的驅動部133。藉由此驅動部133,使保持臂131繞水平軸任意轉動。此外保持臂131,可以驅動部133為中心任意轉動,且可於水平方向(X方向)任意移動。於驅動部133之下方,設置例如具備馬達等之其他驅動部(未圖示)。藉由此一其他驅動部,驅動部133可沿著往鉛直方向延伸之支持柱134而在鉛直方向移動。如此地藉由驅動部133,保持在保持構件132之上晶圓WU,可繞水平軸轉動且可於鉛直方向及水平方向移動。此外,保持在保持構件132之上晶圓WU,以驅動部133為中心轉動,可從位置調節機構120在與後述上吸盤140之間移動。
於處理領域T2,設置:作為第1保持部之上吸盤140,在底面吸附保持上晶圓WU;以及作為第2保持部之下吸盤141,在頂面載置而吸附保持下晶圓WL。下吸盤141,設置於上吸盤140之下方,構成為可與上吸盤140對向配置。亦即,可將保持在上吸盤140之上晶圓WU與保持在下吸盤141之下晶圓WL對向配置。
上吸盤140,保持在設置於該上吸盤140之上方的上吸盤保持部150。上吸盤保持部150,設置於處理容器100的頂棚面。亦即,上吸盤140,藉由上吸盤保持部150而固定設置在處理容器100。
於上吸盤保持部150設置上部拍攝部151,拍攝保持在下吸盤141之下晶圓WL的表面WL1。亦即,上部拍攝部151與上吸盤140鄰接設置。上部拍攝部151,例如使用CCD照相機。
下吸盤141,為設置於該下吸盤141之下方的下吸盤平台160所支持。於下吸盤平台160設置下部拍攝部161,拍攝保持在上吸盤140之上晶圓WU的表面WU1。亦即,下部拍攝部161與下吸盤141鄰接設置。下部拍攝部161,例如使用CCD照相機。
下吸盤平台160,為設置於該下吸盤平台160之下方的第1下吸盤移動部162所支持;進一步,第1下吸盤移動部162,為支持台163所支持。第1下吸盤移動部162,如同後述地構成為使下吸盤141在水平方向(X方向)移動。此外,第1下吸盤移動部162,構成為可使下吸盤141在鉛直方向任意移動,且可繞鉛直軸旋轉。
支持台163,安裝在一對軌道164、164,其等設置於該支持台163之底面側,於水平方向(X方向)延伸。而支持台163,構成為藉由第1下吸盤移動部162而可沿著軌道164任意移動。另,第1下吸盤移動部162,例如藉由沿著軌道164設置之線性馬達(未圖示)而移動。
一對軌道164、164,配列於第2下吸盤移動部165。第2下吸盤移動部165,安裝在一對軌道166、166,其等設置於該第2下吸盤移動部165之底面側,於水平方向(Y方向)延伸。而第2下吸盤移動部165,構成為可沿著軌道166任意移動,
亦即構成為可使下吸盤141在水平方向(Y方向)移動。第2下吸盤移動部165,例如藉由沿著軌道166設置之線性馬達(未圖示)而移動。一對軌道166、166,配列於設置在處理容器100之底面的載置台167上。
接著,對於接合裝置41之上吸盤140的詳細構成予以說明。
上吸盤140,如圖6及圖7所示地採用銷吸盤方式。上吸盤140具備本體部170,在俯視時其所具有的徑為上晶圓WU的徑以上。於本體部170之底面,設置與上晶圓WU的背面WU2接觸之複數根銷171。另,圖7中,省略銷171的圖示。
此外,於本體部170之底面,設置抽真空以吸附上晶圓WU的複數之抽吸部172~174。抽吸部172~174,各自具有與銷171相同之高度,與上晶圓WU的背面WU2接觸。
第1抽吸部172,俯視時具有圓弧形狀。第1抽吸部172,於本體部170之外周部中,在與該本體部170同心的圓周上,於圓周方向並排而隔著既定間隔配置複數個,例如8個。
此等8個第1抽吸部172,分別經由第1抽吸管172a,而與第1真空泵172b連接。藉由第1真空泵172b所進行的抽真空,8個第1抽吸部172可個別地吸附上晶圓WU。
第2抽吸部173,與第1抽吸部172同樣地,俯視時具有圓弧形狀。第2抽吸部173,於較第1抽吸部172更接近本體部170之內周側中,在與該本體部170同心的圓周上,於圓周方向並排而隔著既定間隔配置複數個,例如8個。另,第1抽吸部172之中心部與第2抽吸部173之中心部,配置於本體部170之中心線上。
此等8個第2抽吸部173,分別經由第2抽吸管173a,而與第2真空泵173b連接。藉由第2真空泵173b所進行的抽真空,8個第2抽吸部173可個別吸附上晶圓WU。
第3抽吸部174,俯視時具有圓環形狀。第3抽吸部174,於較第2抽吸部173更為接近本體部170之內周側中,配置在與該本體部170同心的圓周上。第3抽吸部174,經由第3抽吸管174a,而與第3真空泵174b連接。藉由第3真空泵174b所進行的抽真空,第3抽吸部174可吸附上晶圓WU。
於本體部170,設置作為基板檢測部之感測器175,其檢測上晶圓WU從該本體部170的脫離。感測器175,於第1抽吸部172與第2抽吸部173之間中,在與本體部170同心的圓周上,於圓周方向並排而隔著既定間隔配置複數個,例如8個。亦即,感測器175、第1抽吸部172之中心部、及第2抽吸部173之中心部,配置於本體部170的同一中心線上。另,關於此等感測器175之種類與配置等細節,將於後述內容說明。
於本體部170之中心部形成貫通孔176,其在厚度方向貫通該本體部170。此一本體部170之中心部,對應於吸附保持在上吸盤140的上晶圓WU之中心部。而後述推動構件190之致動器部191的前端部,貫穿貫通孔176。
接著,對於上述感測器175的細節、及使用該感測器175的檢查結果之抽吸部172~174的控制方法予以說明。
如同後述,在將上晶圓WU與下晶圓WL接合時,首先,將上晶圓WU之中心部往下推而使其與下晶圓WL之中心部接觸,以分子間作用力將上晶圓WU之中心部與下晶圓WL之中心部接合,藉而在兩晶圓之中心部形成接合領域。其後,產生接合領域從兩晶圓WU、WL之中心部朝向外周部擴大的接合波,上晶圓WU的表面WU1、及下晶圓WL的表面WL1彼此於全表面接合。
感測器175,係為了掌握此接合波,而設置於本體部170。
感測器175,可利用各種感測器。例如感測器175,亦可利用反射式之光纖感測器。此一情況,從感測器175朝向上晶圓WU發出光線,進一步在感測器175中接收其反射光而測定光接收量。而後,藉由測定此反射光的光接收量,而可掌握光軸與上晶圓WU之垂直度。亦即,反射光量小的情況,光軸與上晶圓WU之垂直度大(上晶圓WU之斜率大),意指上晶圓WU從上吸盤140脫離,但並未與下晶圓WL抵接的狀態。另一方面,反射光量大的情況,光軸與上晶圓WU之垂直
度小(上晶圓WU之斜率小),意指上晶圓WU從上吸盤140脫離,而與下晶圓WL抵接的狀態。因此,藉由以感測器175測定反射光量,而可檢測該感測器175之上晶圓WU與下晶圓WL的抵接狀態(換而言之,上晶圓WU從上吸盤140脫離的狀態),可掌握接合波。
此外,例如感測器175,亦可利用靜電電容感測器或距離長度量測感測器。在利用靜電電容感測器之情況,藉由測定與上晶圓WU的靜電電容,而可測定上吸盤140與上晶圓WU的距離。此外,利用距離長度量測感測器之情況,從感測器175往上晶圓WU發出雷射光,在感測器175中接收其反射光,藉而可測定上吸盤140與上晶圓WU的距離。藉由如此地測定上吸盤140與上晶圓WU的距離,而可檢測該感測器175之上晶圓WU與下晶圓WL的抵接狀態(換而言之,上晶圓WU從上吸盤140脫離的狀態),可掌握接合波。
此外,例如感測器175,亦可利用流體感測器。此一情況,於本體部170設置吸附墊(未圖示),亦即於圖6及圖7所示之符號「175」的位置設置吸附墊,將感測器175設置於與此吸附墊連接的抽吸管(未圖示)。另,吸附墊,並非以吸附保持上晶圓WU為目的,而係以不對接合波造成影響之程度的微小壓力,例如-10kPa程度,將上晶圓WU抽真空。而感測器175,測定在各抽吸管流通之氣體的流量或壓力。例如上晶圓WU從上吸盤140脫離的情況,抽吸管內之氣體的流動改變,該氣體的流量及壓力發生變化。感測器175,測定此抽吸管內之氣流的變化,可檢測上晶圓WU從上吸盤140的脫離(換而言之,上晶圓WU與下晶圓WL的抵接
狀態),可掌握接合波。另,感測器175,亦可分別設置於第1抽吸部172之第1抽吸管172a、及第2抽吸部173之第2抽吸管173a。
此感測器175,如同上述地於第1抽吸部172與第2抽吸部173之間中,在與本體部170同心的圓周上,於圓周方向並排而隔著既定間隔配置。接著,對此感測器175的配置予以說明。
感測器175的配置,係因應上晶圓WU之物理性質,例如楊氏係數或泊松比(Poisson’s ratio)等的非等向性而決定。圖8為,顯示習知之晶圓間的接合領域之擴大樣子的說明圖。本案發明人等,如圖8所示,發現施行接合處理時,接合領域A並非為同心圓狀地擴大,而係不均地擴大。另,圖8為,從下方觀察保持在上吸盤140之上晶圓WU的俯視圖。
上晶圓WU為,與表面WU1垂直之方向中的結晶方向為[100]的單晶矽晶圓。上晶圓WU之凹口部N,形成在上晶圓WU的[011]結晶方向之外緣。而接合領域A,相較於以從上晶圓WU之中心部朝向對上晶圓WU的表面WU1呈平行之[0-11]結晶方向的方向為基準之90°周期的方向(圖8所示之0°、90°、180°、270°的方向,以下有稱作90°方向等情況),往從上晶圓WU之中心部朝向對上晶圓WU的表面WU1呈平行之[010]結晶方向的方向為基準之45°周期的方向(圖8所示之45°、135°、225°、315°的方向,以下有稱作45°方向等情況)快速地擴大。此一結果,接合開始時(中心部接合時)為圓形之接合領域A的形狀,隨著擴大而漸接近以45°方向為頂點的四角形。
本實施形態中,將感測器175在與本體部170同心的圓周上設置8個,亦即設置於90°方向與45°方向。因此,利用此等感測器175檢測上晶圓WU從上吸盤140的脫離,檢測圖8所示之接合領域A,藉而可掌握接合波。
將此感測器175之檢測結果,往控制部70輸出。控制部70,依據感測器175之檢測結果,控制抽吸部172~174的運作。
圖9為,顯示感測器175的輸出結果之一例的圖表。圖9之橫軸顯示接合處理的經過時間,縱軸顯示感測器175的輸出結果,亦即相對於上吸盤140之上晶圓WU的位置。感測器175的輸出結果為P1(上晶圓WU接近上吸盤140)之情況,表示在該感測器175的位置中上晶圓WU與上吸盤140抵接,並未到達接合領域A。感測器175的檢測結果為P2(上晶圓WU遠離上吸盤140)之情況,表示在該感測器175的位置中上晶圓WU遠離上吸盤140,與下晶圓WL抵接,到達接合領域A。
圖9(a),顯示如圖8所示地接合領域A不均一,即略四角形地擴大的情況。如同上述,接合領域A,相較於90°方向,在45°方向中快速地擴大。因此,在45°方向中接合領域A到達之時間點,與在90°方向中接合領域A到達之時間點的時間差△T變大。
而控制部70,為了使接合領域A的擴大均一化,而如圖9(b)所示地控制使時間差△T收斂在既定閾值內。此處,在時間差△T與接合後之重合晶圓WT的變形之
間具有相關關係。上述△T之既定閾值,係從此重合晶圓WT的變形之容許範圍設定。
控制部70的控制,具體而言,係延遲45°方向之第2抽吸部173使上晶圓WU脫離的時間點,提早90°方向之第2抽吸部173使上晶圓WU脫離的時間點。藉此,在8個感測器175的位置中,可使接合領域A到達之時間點幾近相同。因此,可使接合領域A的擴大均一化,可使接合波均一化(接近同心圓狀之形狀)。
另,本實施形態,雖對於依據感測器175之檢測結果控制第2抽吸部173的吸附時間點之情況進行說明,但亦可進一步控制第2抽吸部173的吸附力。此外,亦可依據感測器175之檢測結果,控制其他抽吸部172、174。
接著,對於接合裝置41之上吸盤保持部150的詳細構成予以說明。
上吸盤保持部150,如圖5所示地具備上吸盤平台180,設置於上吸盤140的本體部170之頂面。上吸盤平台180,設置為俯視時至少覆蓋本體部170之頂面,且對於本體部170例如藉由螺著固定方式而固定。上吸盤平台180,為設置於處理容器100之頂棚面的複數之支持構件181所支持。
於上吸盤平台180之頂面,如圖6所示地進一步設置推壓上晶圓WU之中心部的推動構件190。推動構件190,具備致動器部191與壓力缸筒部192。
致動器部191,藉由從電子氣動調節器(未圖示)供給的空氣而往一定方向產生一定壓力,可無關於壓力之作用點的位置而恆定地產生該壓力。而後,藉由來自電子氣動調節器的空氣,致動器部191,可控制與上晶圓WU之中心部抵接而對該上晶圓WU之中心部施加的推壓荷重。此外,致動器部191之前端部,藉由來自電子氣動調節器的空氣,貫穿貫通孔176而可在鉛直方向任意升降。
致動器部191,為壓力缸筒部192所支持。壓力缸筒部192,例如可藉由內建有馬達的驅動部而使致動器部191在鉛直方向移動。
如同上述,推動構件190,藉由致動器部191控制推壓荷重,藉由壓力缸筒部192控制致動器部191的移動。而推動構件190,在後述晶圓WU、WL之接合時,可使上晶圓WU之中心部與下晶圓WL之中心部抵接而予以推壓。
接著,對於接合裝置41之下吸盤141的詳細構成予以說明。
下吸盤141,如圖6所示,與上吸盤140同樣地採用銷吸盤方式。下吸盤141具備本體部200,在俯視時其所具有的徑為下晶圓WL的徑以上。於本體部200之頂面,設置與下晶圓WL的背面WL2接觸之複數根銷201。此外,於本體部200之頂面的外周部設置外側凸條202,其具有與銷201相同之高度,支持下晶圓WL之背面WL2的外周部。外側凸條202,在複數根銷201之外側設置為環狀。
此外,於本體部200的頂面,在外側凸條202之內側中設置內側凸條203,其具有與銷201相同之高度,支持下晶圓WL的背面WL2。內側凸條203,與外側凸條202同心圓狀地設置為環狀。而後,將外側凸條202之內側的領域204(以下亦有稱作抽吸領域204之情況),區隔為內側凸條203之內側的第1抽吸領域204a、及內側凸條203之外側的第2抽吸領域204b。
於本體部200之頂面,在第1抽吸領域204a中,形成用於對下晶圓WL抽真空的第1抽吸口205a。第1抽吸口205a,例如在第1抽吸領域204a中形成於1處。第1抽吸口205a,與設置於本體部200之內部的第1抽吸管206a相連接。進一步,第1抽吸管206a,與第1真空泵207a相連接。
此外,於本體部200之頂面,在第2抽吸領域204b中,形成用於對下晶圓WL抽真空的第2抽吸口205b。第2抽吸口205b,例如在第2抽吸領域204b中形成於2處。第2抽吸口205b,與設置於本體部200之內部的第2抽吸管206b相連接。進一步,第2抽吸管206b,與第2真空泵207b相連接。
而後,分別從抽吸口205a、205b,將下晶圓WL、本體部200及外側凸條202所包圍而形成的抽吸領域204a、204b抽真空,將抽吸領域204a、204b減壓。此時,抽吸領域204a、204b之外部的氣體環境為大氣壓,故藉由大氣壓將下晶圓WL往抽吸領域204a、204b側推壓經減壓的分,將下晶圓WL吸附保持於下吸盤141。此
外,下吸盤141,構成為可於每個第1抽吸領域204a與第2抽吸領域204b對下晶圓WL抽真空。
下吸盤141中,於本體部200之中心部附近,將在厚度方向貫通該本體部200的貫通孔(未圖示)例如形成於3處。而後,使設置於第1下吸盤移動部162之下方的升降銷,貫穿貫通孔。
於本體部200之外周部,設置引導構件(未圖示),其防止晶圓WU、WL、重合晶圓WT從下吸盤141突出、滑落。引導構件,於本體部200之外周部等間隔地設置於複數處,例如4處。
另,接合裝置41之各部的運作,由上述控制部70控制。
接著,對於使用如同上述地構成之接合系統1而施行的晶圓WU、WL之接合處理方法予以說明。圖10為顯示此晶圓接合處理之主要步驟的例子之流程圖。
首先,將收納有複數片上晶圓WU之晶圓匣盒CU、收納有複數片下晶圓WL之晶圓匣盒CL、及空的晶圓匣盒CT,載置於搬出入站2之既定晶圓匣盒載置板11。其後,藉由晶圓搬運裝置22將晶圓匣盒CU內的上晶圓WU取出,往處理站3之第3處理區塊G3的傳送裝置50搬運。
接著,將上晶圓WU,藉由晶圓搬運裝置61往第1處理區塊G1的表面改質裝置30搬運。表面改質裝置30,在既定減壓氣體環境下,激發處理氣體即氧氣或氮氣而使其電漿化、離子化。對上晶圓WU的表面WU1照射此等氧離子或氮離子,將該表面WU1電漿處理。而使上晶圓WU的表面WU1改質(圖10之步驟S1)。
接著,將上晶圓WU,藉由晶圓搬運裝置61往第2處理區塊G2的表面親水化裝置40搬運。表面親水化裝置40,使保持在旋轉吸盤之上晶圓WU旋轉,並往該上晶圓WU上供給純水。如此一來,則供給之純水在上晶圓WU的表面WU1上擴散,使羥基(矽醇基)附著於在表面改質裝置30中改質之上晶圓WU的表面WU1而使該表面WU1親水化。此外,藉由該純水,清洗上晶圓WU的表面WU1(圖10之步驟S2)。
接著,將上晶圓WU,藉由晶圓搬運裝置61往第2處理區塊G2的接合裝置41搬運。將搬入至接合裝置41之上晶圓WU,經由過渡區110而藉由晶圓搬運機構111往位置調節機構120搬運。而後藉由位置調節機構120,調節上晶圓WU之水平方向的朝向(圖10之步驟S3)。
其後,從位置調節機構120往反轉機構130之保持臂131傳遞上晶圓WU。接著在搬運領域T1中,藉由將保持臂131反轉,而使上晶圓WU的表背面反轉(圖10之步驟S4)。亦即,使上晶圓WU的表面WU1朝向下方。
其後,反轉機構130之保持臂131,以驅動部133為中心轉動並往上吸盤140之下方移動。而後,從反轉機構130往上吸盤140傳遞上晶圓WU。上晶圓WU,其背面WU2吸附保持在上吸盤140(圖10之步驟S5)。具體而言,使真空泵172b、173b、174b作動,以抽吸部172、173、174對上晶圓WU抽真空,將上晶圓WU吸附保持在上吸盤140。
對上晶圓WU施行上述步驟S1~S5的處理之間,接續該上晶圓WU而施行下晶圓WL的處理。首先,藉由晶圓搬運裝置22將晶圓匣盒CL內之下晶圓WL取出,往處理站3的傳送裝置50搬運。
接著,將下晶圓WL,藉由晶圓搬運裝置61往表面改質裝置30搬運,使下晶圓WL的表面WL1改質(圖10之步驟S6)。另,步驟S6之下晶圓WL的表面WL1之改質,與上述步驟S1相同。
其後,將下晶圓WL,藉由晶圓搬運裝置61往表面親水化裝置40搬運,使下晶圓WL的表面WL1親水化並清洗該表面WL1(圖10之步驟S7)。另,步驟S7之下晶圓WL的表面WL1之親水化及清洗,與上述步驟S2相同。
其後,將下晶圓WL,藉由晶圓搬運裝置61往接合裝置41搬運。將搬入至接合裝置41之下晶圓WL,經由過渡區110而藉由晶圓搬運機構111往位置調節機構120搬運。而後藉由位置調節機構120,調節下晶圓WL之水平方向的朝向(圖10之步驟S8)。
其後,將下晶圓WL,藉由晶圓搬運機構111往下吸盤141搬運,將其背面WL2吸附保持在下吸盤141(圖10之步驟S9)。具體而言,使真空泵207a、207b作動,在抽吸領域204a、204b中經由抽吸口205a、205b對下晶圓WL抽真空,將下晶圓WL吸附保持在下吸盤141。
接著,施行保持在上吸盤140之上晶圓WU與保持在下吸盤141之下晶圓WL的水平方向之位置調節。具體而言,藉由第1下吸盤移動部162與第2下吸盤移動部165使下吸盤141在水平方向(X方向及Y方向)移動,利用上部拍攝部151,依序拍攝下晶圓WL的表面WL1上之預先決定的基準點。同時,利用下部拍攝部161,依序拍攝上晶圓WU的表面WU1上之預先決定的基準點。將拍攝到的影像,往控制部70輸出。控制部70,依據以上部拍攝部151拍攝到之影像與以下部拍攝部161拍攝到之影像,藉由第1下吸盤移動部162與第2下吸盤移動部165,使下吸盤141往上晶圓WU的基準點與下晶圓WL的基準點分別一致之位置移動。如此地調節上晶圓WU與下晶圓WL之水平方向位置(圖10之步驟S10)。
另,步驟S10中,如同上述地使下吸盤141在水平方向移動,並藉由第1下吸盤移動部162使下吸盤141旋轉,亦調節該下吸盤141之旋轉方向位置(下吸盤141之朝向)。
其後,藉由第1下吸盤移動部162使下吸盤141在鉛直上方移動,施行上吸盤140與下吸盤141的鉛直方向位置之調節,施行保持在該上吸盤140之上晶圓WU
與保持在下吸盤141之下晶圓WL的鉛直方向位置之調節(圖10之步驟S11)。另,將下晶圓WL的表面WL1與上晶圓WU的表面WU1之間隔調節為既定距離,例如調節為50μm~200μm。而後,如圖11所示地將上晶圓WU與下晶圓WL在既定位置對向配置。
接著,施行保持在上吸盤140之上晶圓WU與保持在下吸盤141之下晶圓WL的接合處理。
另,本實施形態中,對於如同上述地預先設定第2抽吸部173的吸附時間點以使接合波成為均一之情況予以說明。亦即,例如對於前一批上晶圓WU藉由感測器175檢測接合領域A的擴大,依據該檢測結果,設定對於當批上晶圓WU之第2抽吸部173的吸附時間點。
首先,如圖12所示地藉由推動構件190之壓力缸筒部192使致動器部191下降。如此一來,則伴隨此致動器部191的下降,上晶圓WU之中心部受到推壓而下降。此時,藉由從電子氣動調節器供給的空氣,對致動器部191施加既定的推壓荷重。而後,藉由推動構件190,使上晶圓WU之中心部與下晶圓WL之中心部抵接並予以推壓(圖10之步驟S12)。
步驟S12中,停止第3真空泵174b的運作,停止來自第3抽吸部174之上晶圓WU的抽真空,並維持使第2真空泵173b及第1真空泵172b作動,以第2抽吸部173及第1抽吸部172將上晶圓WU抽真空。
使上晶圓WU之中心部與下晶圓WL之中心部抵接而予以推壓,則在該中心部之間開始接合。亦即,由於上晶圓WU的表面WU1與下晶圓WL的表面WL1分別在步驟S1、S6中改質,故首先表面WU1、WL1間產生凡得瓦力(分子間作用力),將該表面WU1、WL1彼此接合。進一步,上晶圓WU的表面WU1與下晶圓WL的表面WL1分別在步驟S2、S7中親水化,故表面WU1、WL1間的親水基進行氫鍵結(分子間作用力),將表面WU1、WL1彼此堅固地接合。如此地,形成接合領域A。
其後,上晶圓WU與下晶圓WL之間,產生接合領域A從上晶圓WU及下晶圓WL之中心部朝向外周部漸擴大的接合波。
如圖13所示地,在藉由推動構件190推壓上晶圓WU之中心部與下晶圓WL之中心部的狀態下停止第2真空泵173b的作動,停止來自第2抽吸部173之上晶圓WU的抽真空。此時,如同上述地使8個第2抽吸部173的吸附時間點不同。亦即,延遲45°方向之第2抽吸部173使上晶圓WU脫離的時間點,提早90°方向之第2抽吸部173使上晶圓WU脫離的時間點。藉此,在8個感測器175的位置中,可使接合領域A到達之時間點幾近相同,可使接合波均一化。
進一步,如圖14所示,停止第1真空泵172b的作動,停止來自第1抽吸部172之上晶圓WU的抽真空。而後,上晶圓WU依序掉落至下晶圓WL上而與其抵接,上述表面WU1、WL1間的凡得瓦力與氫鍵所進行之接合依序擴展。如此地,上晶圓WU的表面WU1與下晶圓WL的表面WL1在全表面抵接,將上晶圓WU與下晶圓
WL接合(圖10之步驟S13)。此時,接合波成為均一,故可抑制接合之重合晶圓WT的變形(扭曲)。
另,步驟S13中,利用8個感測器175檢測接合領域A,監控接合波,檢查上晶圓WU與下晶圓WL之接合狀態。如同上述,本實施形態中,雖預先設定第2抽吸部173的吸附時間點俾使接合波變得均一,但有因各種干擾而使接合波變得不均之情況。藉由在此一情況發出警告,而可改善製品的良率。此外,在如此地接合波變得不均一之情況,依據感測器175之檢測結果,修正後續的將上晶圓WU與下晶圓WL接合時之第2抽吸部173的吸附時間點。
其後,如圖15所示使推動構件190之致動器部191上升至上吸盤140。此外,停止真空泵207a、207b的作動,停止抽吸領域204之下晶圓WL的抽真空,停止下吸盤141所進行之下晶圓WL的吸附保持。
將上晶圓WU與下晶圓WL接合之重合晶圓WT,藉由晶圓搬運裝置61往傳送裝置51搬運,其後藉由搬出入站2的晶圓搬運裝置22往既定晶圓匣盒載置板11之晶圓匣盒CT搬運。如此地,結束一系列之晶圓WU、WL的接合處理。
依上述實施形態,則藉由感測器175,可檢測保持在上吸盤140之上晶圓WU從該上吸盤140的脫離,可掌握接合波。而後,控制部70,依據感測器175之檢測結果,控制第2抽吸部173的吸附時間點。藉此,可使接合波均一,可抑制重合晶圓WT的變形。
此外,本實施形態之接合系統1,具備表面改質裝置30、表面親水化裝置40、及接合裝置41,故可在一個系統內效率良好地施行晶圓WU、WL的接合。因此,可改善晶圓接合處理之處理量。
接著,對於本發明之另一實施形態予以說明。
上述實施形態之上吸盤140中,將感測器175,於第1抽吸部172與第2抽吸部173之間中,在與本體部170同心的圓周上,於圓周方向並排而隔著既定間隔配置,但感測器175之配置並未限定於此一形態。
如圖16所示,亦可將感測器175,除了配置在第1抽吸部172與第2抽吸部173之間以外,進一步於較第2抽吸部173更為接近本體部170之內周側中,在與本體部170同心的圓周上,於圓周方向並排而隔著既定間隔配置複數個,例如8個。亦即,2種感測器175、第1抽吸部172之中心部、及第2抽吸部173之中心部,配置於本體部170的同一中心線上。另,下述內容中,將第1抽吸部172與第2抽吸部173之間的感測器175稱作感測器175a,將第2抽吸部173之內周側的感測器175稱作感測器175b。
此一情況,可依據感測器175b之檢測結果,控制與該感測器175b位於同一中心線上之第2抽吸部173的吸附時間點。因此,可將第2抽吸部173即時地前饋控制,可更為確實地使接合波均一。
另,亦可省略感測器175a,僅設置感測器175b。然則,感測器175a,與本體部170之中心部分離配置,故相較於感測器175b可顯著地掌握接合領域A的不均一擴散。具體而言,例如上晶圓WU的徑為300mm之情況,感測器175a,宜配置於從本體部170之中心部往徑更為外側240mm。
此外,如圖8所示,習知之接合領域A略四角形地擴大。若考慮此一接合領域A之擴大的對稱性,則亦可減少感測器175之數量。
例如亦可如圖17(a)~(b)所示地將2個感測器175配置於本體部170的同一圓周上。亦即,至少於45°方向與90°方向分別配置1個感測器175即可。此一情況,可利用45°方向的感測器175,推測其他45°方向之接合領域A的擴大,此外可利用90°方向的感測器175,推測其他90°方向之接合領域A的擴大。
然則,如圖7所示地將感測器175涵蓋本體部170之圓周上的全周而設置之情況,可掌握至上晶圓WU與下晶圓WL之間的間隔大小。此處,上晶圓WU與下晶圓WL並非嚴格地平行,而有傾斜微小距離,例如數μm的情況。此一情況,上晶圓WU與下晶圓WL的間隔大者空氣容易往外部抽出,故接合領域A快速擴大。如
此地即便接合領域A的擴大具有差距,若將感測器175設置於本體部170之全周,仍可適當地掌握接合波。
上述實施形態中,利用感測器175檢測上晶圓WU與下晶圓WL的抵接狀態,掌握接合波,但亦可進一步測定致動器部191的位移,掌握接合波。如圖18所示地,於推動構件190設置雷射位移計300。雷射位移計300,測定設置於致動器部191之標的301的位移,測定該致動器部191的位移。
此一情況,上述實施形態之步驟S12(圖12)中,在使推動構件190的致動器部191下降時,藉由雷射位移計300測定致動器部191的位移。而後,在此雷射位移計300所測定出的位移達到既定閾值時,檢測出上晶圓WU之中心部與下晶圓WL之中心部抵接。
如此地依據雷射位移計300所產生之測定結果,可掌握接合領域A的開始,故可更為適當地掌握接合波。此外,亦可依據雷射位移計300所產生之測定結果,控制抽吸部172~174的吸附時間點。
另,設置於推動構件190之位移計,並未限定於雷射位移計300,若為可測定致動器部191的位移者,則可任意選擇。
上述實施形態之上吸盤140中,雖於8個第2抽吸部173連接個別的第2真空泵173b,但亦可使1個第2真空泵173b一起控制複數之第2抽吸部173的運作。例如
亦可藉由1個第2真空泵173b,控制4個位於45°方向之第2抽吸部173。此外,亦可藉由1個第2真空泵173b,控制4個位於90°方向之第2抽吸部173。
同樣地,關於8個第1抽吸部172,亦可使1個第1真空泵172b一起控制複數之第1抽吸部172的運作。
此外,抽吸部172~174之數量與配置,並未限定於圖7所示的例子。本體部170中同一圓周上的抽吸部之數量,亦可為8個以外。此外,本體部170中,亦可將抽吸部設置3層以上。
上述實施形態的接合裝置41,雖構成為下吸盤141可在水平方向移動,但亦可構成為上吸盤140可在水平方向移動,或構成為上吸盤140與下吸盤141雙方可在水平方向移動。
此外,上述實施形態的接合裝置41,雖構成為下吸盤141可在鉛直方向移動,但亦可構成為上吸盤140可在鉛直方向移動,或構成為上吸盤140與下吸盤141雙方可在鉛直方向移動。
進一步,上述實施形態的接合裝置41,雖構成為下吸盤141可旋轉,但亦可構成為上吸盤140可旋轉,或構成為上吸盤140與下吸盤141雙方可旋轉。
上述實施形態之接合系統1中,亦可在以接合裝置41將晶圓WU、WL接合後,進一步將接合之重合晶圓WT以既定溫度加熱(退火處理)。藉由對重合晶圓WT施行此一加熱處理,而可使接合界面更為堅固地結合。
以上,雖參考附圖並對本發明之最佳實施形態進行說明,但本發明並未限定於此例。若為所屬技術領域中具有通常知識者,則明顯可在發明申請專利範圍所記載之思想範疇內,思及各種變更例或修正例,應了解其等自然亦屬於本發明之技術範圍。本發明不限於此例,可採用各種態樣。本發明,亦可應用在基板為晶圓以外的FPD(平板顯示器)、光罩用之倍縮光罩等其他基板的情況。
140:上吸盤
141:下吸盤
150:上吸盤保持部
170:本體部
171:銷
172,173,174:抽吸部
172a,173a,174a:抽吸管
172b,173b,174b:真空泵
175:感測器
176:貫通孔
180:上吸盤平台
190:推動構件
191:致動器部
192:壓力缸筒部
200:本體部
201:銷
202:外側凸條
203:內側凸條
204a,204b:抽吸領域
205a,205b:抽吸口
206a,206b:抽吸管
207a,207b:真空泵
WL:下晶圓
WU:上晶圓
Claims (12)
- 一種接合裝置,進行將基板彼此接合之接合處理,其特徵為包含: 第1保持部,將第1基板吸附保持於其底面; 第2保持部,設置於該第1保持部之下方,將第2基板吸附保持於其頂面; 推動構件,設置於該第1保持部,推壓該第1基板的中心部; 基板檢測部,檢測該第1基板與該第2基板的接合領域;以及 控制部,依據該接合處理的經過時間與該基板檢測部的檢測結果,控制該第1保持部使該第1基板脫離之時間點,俾使該接合領域的擴大均一化。
- 如請求項1之接合裝置,其中, 該控制部,將下述時間點的時間差控制成收斂在預先設定的閾值內: 從該第1基板的中心部朝向外緣之一方向中的接合領域到達之時間點;以及 與該一方向不同之從該第1基板的中心部朝向外緣之其它方向的接合領域到達之時間點。
- 如請求項1之接合裝置,其中, 該控制部,針對前一批的該第1基板,藉由該基板檢測部檢測該接合領域的擴大,並依據此檢測結果,而針對當批的該第1基板,控制第1保持部脫離之時間點。
- 如請求項1之接合裝置,其中, 該基板檢測部,在與該第1保持部同心的圓周上,設置複數個。
- 如請求項4之接合裝置,其中, 該基板檢測部,設置在複數的圓周上。
- 一種接合系統,具備請求項1之接合裝置,且包含: 處理站,具備該接合裝置;以及 搬出入站,分別保存複數片該第1基板、該第2基板、或將該第1基板與該第2基板接合成之重合基板,並將該第1基板、該第2基板、或該重合基板對該處理站搬出入; 且該處理站,包括: 表面改質裝置,將該第1基板或該第2基板之接合的表面改質; 表面親水化裝置,使藉由該表面改質裝置改質過之該第1基板或該第2基板的表面親水化;以及 搬運裝置,用於對該表面改質裝置、該表面親水化裝置、及該接合裝置,搬運該第1基板、該第2基板或該重合基板; 且在該接合裝置,將表面藉由該表面親水化裝置親水化之該第1基板與該第2基板接合。
- 一種接合方法,將基板彼此接合,包含如下步驟: 配置步驟,使保持在第1保持部之底面的第1基板與保持在第2保持部之頂面的第2基板對向配置; 推壓步驟,接著,使設置於該第1保持部並推壓該第1基板之中心部的推動構件下降,藉由該推動構件推壓該第1基板之中心部與該第2基板之中心部以使其抵接;以及 接合步驟,接著,在該第1基板之中心部與該第2基板之中心部抵接的狀態下,從該第1基板的中心部朝向外周部,將該第1基板與該第2基板依序接合; 在該接合步驟中,藉由基板檢測部,檢測該第1基板與該第2基板的接合領域,且依據該接合步驟的經過時間與該基板檢測部的檢測結果,控制該第1保持部使該第1基板脫離的時間點,俾使該接合領域的擴大均一化。
- 如請求項7之接合方法,其中, 在該接合步驟中,將下述時間點的時間差控制成收斂在預先設定的閾值內: 從該第1基板的中心部朝向外緣的一方向中的接合領域到達之時間點;以及 與該一方向不同之從該第1基板的中心部朝向外緣的其它方向的接合領域到達之時間點。
- 如請求項7之接合方法,其中, 在該接合步驟中,針對前一批該第1基板,藉由該基板檢測部檢測該接合領域的擴大,並依據此檢測結果,而針對當批該第1基板,控制第1保持部脫離之時間點。
- 如請求項7之接合方法,其中, 該基板檢測部,在與該第1保持部同心的圓周上,設置複數個。
- 如請求項10之接合方法,其中, 該基板檢測部,設置在複數的圓周上。
- 一種非暫時的電腦可讀取之記錄媒體, 收納有在控制部的電腦上運作之程式, 該程式控制接合裝置,俾藉由該接合裝置實行請求項7之接合方法。
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TW201308445A (zh) * | 2011-03-04 | 2013-02-16 | Tokyo Electron Ltd | 接合方法、電腦記憶媒體、接合裝置及接合系統 |
US20150017782A1 (en) * | 2013-07-10 | 2015-01-15 | Tokyo Electron Limited | Bonding device and bonding method |
US20160155721A1 (en) * | 2014-11-27 | 2016-06-02 | Tokyo Electron Limited | Bonding Method, Storage Medium, Bonding Apparatus and Bonding System |
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JP6820189B2 (ja) | 2021-01-27 |
KR102447744B1 (ko) | 2022-09-28 |
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KR20180062948A (ko) | 2018-06-11 |
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TW202209549A (zh) | 2022-03-01 |
TWI750266B (zh) | 2021-12-21 |
CN108133903A (zh) | 2018-06-08 |
TW201836055A (zh) | 2018-10-01 |
US20200343216A1 (en) | 2020-10-29 |
CN108133903B (zh) | 2023-02-17 |
US10438920B2 (en) | 2019-10-08 |
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