TWI794438B - Wafer Position Measuring Device - Google Patents

Wafer Position Measuring Device Download PDF

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TWI794438B
TWI794438B TW108107584A TW108107584A TWI794438B TW I794438 B TWI794438 B TW I794438B TW 108107584 A TW108107584 A TW 108107584A TW 108107584 A TW108107584 A TW 108107584A TW I794438 B TWI794438 B TW I794438B
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wafer
imaging
chip
divided
mentioned
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TW108107584A
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TW201939657A (en
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山本比佐史
岡浩平
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日商東麗工程股份有限公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Abstract

本發明之課題在於提供如下一種裝置:於分割拍攝之視野內無定位基準之參照用標記之情形時,即使並不怎麼使用高精度之定位機構,亦可以高精度測定晶片零件之位置。 本發明之晶片位置測定裝置具備基板保持部、分割成複數個分割攝像區域進行拍攝之攝像部、算出晶片零件之位置之晶片位置算出部、相對移動部、及控制部;且 於分割攝像區域包含至少2個以上之晶片零件,且,該晶片零件中之至少1個晶片零件係作為隣接之分割攝像區域之兩者所含之重複攝像晶片零件設定; 晶片位置算出部係 根據與先拍攝之分割攝像區域所含之其他晶片零件之位置關係,算出重複攝像晶片零件各者之位置; 將後拍攝之分割攝像區域所含之重複攝像晶片零件除外之其他晶片零件各者之位置,根據與該重複攝像晶片零件之位置關係算出。The object of the present invention is to provide a device that can measure the position of a wafer component with high precision even without using a high-precision positioning mechanism when there is no reference mark for positioning reference in the field of view of the split shooting. The wafer position measurement device of the present invention includes a substrate holding unit, an imaging unit divided into a plurality of divided imaging areas for imaging, a wafer position calculation unit for calculating the positions of wafer components, a relative movement unit, and a control unit; and At least 2 or more chip parts are included in the divided imaging area, and at least one of the chip parts is set as a repeated imaging chip part contained in two adjacent divided imaging areas; Wafer Position Calculation Department Based on the positional relationship with other chip parts included in the first divided imaging area, calculate the position of each chip part for repeated imaging; The positions of each of the chip parts other than the repeated imaging chip part contained in the divided imaging area to be photographed later are calculated based on the positional relationship with the repeated imaging chip part.

Description

晶片位置測定裝置Wafer Position Measuring Device

本發明係關於測定分開配置於晶圓等基板上之複數個晶片零件各者之位置之晶片位置測定裝置者。 The present invention relates to a wafer position measuring device for measuring the position of each of a plurality of chip parts separately arranged on a substrate such as a wafer.

半導體器件或電子器件等之製造步驟中,有於半導體晶圓或玻璃、樹脂等基板上配置(例如圖案化或安裝等)晶片零件,或自經擴展之晶圓拾取完成切割之晶片零件之步驟。且,有進行該等晶片零件是否以特定之精度配置之良否檢查,或進行保持於哪個位置之位置測定,並將該等晶片零件與其他零件或配線等安裝、積層等之步驟(例如參照專利文獻1~3)。 In the manufacturing steps of semiconductor devices or electronic devices, etc., there are steps of disposing (such as patterning or mounting) chip parts on semiconductor wafers or substrates such as glass or resin, or picking up diced chip parts from expanded wafers . In addition, there are steps to check whether these chip parts are arranged with a specific precision, or to measure the position at which position they are held, and to mount and laminate these chip parts with other parts or wiring (for example, refer to the patent Literature 1~3).

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Document]

[專利文獻1]日本專利特開平10-189672號公報 [Patent Document 1] Japanese Patent Laid-Open No. 10-189672

[專利文獻2]日本專利特開2006-135237號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2006-135237

[專利文獻3]日本專利第4768731號公報 [Patent Document 3] Japanese Patent No. 4768731

若於分割拍攝之視野內有定位基準之參照用標記,則可藉由測定與參照標記之相對位置(XY座標等),而測定晶片零件各者之位置。因此,不會過度要求載物台機構所謀求之定位精度。 If there is a reference mark for positioning reference in the field of view of the split shooting, the position of each chip component can be determined by measuring the relative position (XY coordinates, etc.) with the reference mark. Therefore, the positioning accuracy sought by the stage mechanism is not excessively required.

但,於分割拍攝之視野內無定位基準之參照用標記之情形時,需要基於拍攝分割視野內之場所之靜止位置資訊及該分割視野內之晶片零件之位置資訊,測定各個晶片零件之位置。因此,謀求較晶片測定之位置精度更高精度之攝像位置精度,需要使用利用雷射測長儀等之高精度之載物台。 However, when there is no reference mark for the positioning reference within the field of view of the segmented image, it is necessary to measure the position of each chip part based on the static position information of the place within the imaged segmented view and the position information of the chip parts within the segmented view. Therefore, to obtain imaging position accuracy higher than the position accuracy of wafer measurement, it is necessary to use a high-precision stage using a laser length measuring instrument or the like.

因此,本發明係鑑於上述問題點而完成者,其目的係提供如下一種裝置:於分割拍攝之視野內無定位基準之參照用標記之情形時,即使並不怎麼使用高精度之定位機構,亦可以高精度測定晶片零件之位置。 Therefore, the present invention was made in view of the above-mentioned problems, and its object is to provide a device that can be used even if a high-precision positioning mechanism is not used when there is no reference mark for a positioning reference in the field of view of the split shooting. The position of chip parts can be measured with high precision.

為解決以上問題,本發明之一態樣之特徵在於:其係測定分開配置於基板上之複數個晶片零件各者之位置之晶片位置測定裝置,且具備:基板保持部,其保持基板;攝像部,其將設定於基板上之特定區域分割成複數個分割攝像區域進行拍攝;晶片位置算出部,其基於攝像部所拍攝之圖像,算出分割攝像區域內所含之晶片零件各者之位置; 相對移動部,其使基板保持部與攝像部相對移動;及控制部,其驅動控制相對移動部,且一面變更設定於基板上之分割攝像區域之場所,一面對攝像部輸出攝像觸發;且於分割攝像區域包含至少2個以上之晶片零件,且,該晶片零件中之至少1個晶片零件係作為隣接之分割攝像區域之兩者所含之重複攝像晶片零件設定;晶片位置算出部係根據與先拍攝之分割攝像區域所含之其他晶片零件之位置關係,算出重複攝像晶片零件各者之位置,將後拍攝之分割攝像區域所含之重複攝像晶片零件除外之其他晶片零件各者之位置,根據與該重複攝像晶片零件之位置關係算出。 In order to solve the above problems, an aspect of the present invention is characterized in that it is a wafer position measuring device for measuring the positions of each of a plurality of wafer parts separately arranged on a substrate, and is equipped with: a substrate holding part that holds the substrate; A section that divides a specific area set on the substrate into a plurality of divided imaging areas for shooting; a wafer position calculation section that calculates the positions of each of the wafer components contained in the divided imaging areas based on the image captured by the imaging section ; a relative moving part, which moves the substrate holding part and the imaging part relatively; and a control part, which drives and controls the relative moving part, and outputs an imaging trigger to the imaging part while changing the position of the divided imaging area set on the substrate; and At least two or more wafer parts are included in the divided imaging area, and at least one of the wafer parts is set as a repeated imaging wafer part contained in two adjacent divided imaging areas; the wafer position calculation unit is based on The positional relationship with other chip parts contained in the first divided imaging area is calculated to calculate the positions of each of the repeated imaging chip parts, and the positions of each other chip parts except the repeated imaging chip parts included in the divided imaging area to be captured later , calculated according to the positional relationship with the repeated imaging chip part.

根據上述發明,可以較定位機構之定位精度更高之精度測定晶片零件之位置。 According to the above invention, the position of the wafer part can be measured with higher accuracy than the positioning accuracy of the positioning mechanism.

1:晶片位置測定裝置 1: Wafer position measuring device

1f:裝置框架 1f: Device frame

2:基板保持部 2: Substrate holding part

3:攝像部 3: Camera Department

4:相對移動部 4: Relatively mobile part

5:晶片位置算出部 5: Wafer position calculation part

6:尺度修正部 6: Scale Correction Department

20:基板載置台 20: Substrate mounting table

30:鏡筒 30: lens barrel

31:照明部 31: Lighting department

32:半反射鏡 32: half mirror

33a:對物透鏡 33a: Objective lens

33b:對物透鏡 33b: Objective lens

34:物鏡旋轉器機構 34: Objective lens rotator mechanism

35:攝像相機 35: video camera

41:X軸滑塊 41: X-axis slider

42:Y軸滑塊 42: Y-axis slider

43:旋轉機構 43:Rotary mechanism

C:晶片零件(括號內之數字係排列位置) C: Chip parts (the number in brackets is the arrangement position)

CN:控制部 CN:Control Department

dx1~dx10:偏移量 dx1~dx10: offset

dx20~dx24:偏移量 dx20~dx24: offset

dxk:間隔 dxk:interval

dxm:間隔 dxm:interval

dy1~dy6:偏移量 dy1~dy6: offset

dy10:偏移量 dy10: offset

dy20~dy24:偏移量 dy20~dy24: offset

dy40:偏移量 dy40: offset

F:分割攝像區域(括號內之數字係攝像之順序) F: Divide the imaging area (the numbers in brackets are the sequence of imaging)

FMa:基準標記 FMa: fiducial mark

FMk:基準標記 FMk: Fiducial Mark

FMq:基準標記 FMq: fiducial marker

FMz:基準標記 FMz: Fiducial Mark

L1:照明光 L1: lighting light

L2:自基板側入射之光(反射光、散射光) L2: Light incident from the substrate side (reflected light, scattered light)

M:重複攝像區域 M: repeat camera area

M(1)~M(4):重複攝像區域 M(1)~M(4): repeat camera area

MW:主基板 MW: main substrate

Rxm:間隔 Rxm:Interval

Ryq:間隔 Ryq:Interval

Vs:箭頭 Vs: Arrow

W:基板 W: Substrate

x:方向 x: direction

X11,Y11~X71,Y71:位置 X11, Y11~X71, Y71: position

X12,Y12~X52,Y52:位置 X12, Y12~X52, Y52: position

X111,Y111:位置 X111, Y111: position

y:方向 y: direction

z:方向 z: direction

θ:方向 θ: direction

δxa:偏移量 δxa: offset

δxk:偏移量 δxk: offset

圖1係顯示將本發明具體化之形態之一例之全體構成之概略圖。 Fig. 1 is a schematic diagram showing an overall configuration of an example of an embodiment of the present invention.

圖2係顯示將本發明具體化之形態之一例之攝像情況之概念圖。 Fig. 2 is a conceptual diagram showing an imaging situation of an example of an embodiment of the present invention.

圖3係顯示將本發明具體化之形態之一例之晶片零件各者之位置關係之俯視圖。 Fig. 3 is a plan view showing the positional relationship of each of the wafer components in an example of an embodiment of the present invention.

圖4係顯示將本發明具體化之其他形態之一例之晶片零件各者之位置關係之俯視圖。 Fig. 4 is a plan view showing the positional relationship of each of the wafer components as an example of another embodiment of the present invention.

圖5係顯示將本發明具體化之其他形態之一例之主基板與分割攝像區域之位置關係之俯視圖。 FIG. 5 is a plan view showing the positional relationship between the main substrate and the divided imaging regions as an example of another embodiment of the present invention.

圖6係顯示將本發明具體化之其他形態之一例之分割攝像區域與晶片零件各者之位置關係之俯視圖。 Fig. 6 is a plan view showing the positional relationship between the divided imaging area and each of the wafer components as an example of another embodiment of the present invention.

以下,針對用以實施本發明之形態,一面使用圖式一面進行說明。另,以下之說明中,將正交座標系統之3軸設為X、Y、Z,將水平方向表現為X方向、Y方向,將垂直於XY平面之方向(即,重力方向)表現為Z方向。又,Z方向係將與重力相反之方向表現為上,將重力作用之方向表現為下。又,將以Z方向為中心軸旋轉之方向設為θ方向。 Hereinafter, the form for implementing this invention is demonstrated using drawing. In addition, in the following description, the three axes of the orthogonal coordinate system are set as X, Y, and Z, the horizontal direction is expressed as the X direction and the Y direction, and the direction perpendicular to the XY plane (that is, the direction of gravity) is expressed as Z direction. In addition, the Z direction expresses the direction opposite to the gravity upward, and expresses the direction in which the gravity acts downward. Moreover, let the direction which rotates around a Z direction as a central axis be a θ direction.

圖1係顯示將本發明具體化之形態之一例之全體構成之概略圖。於圖1概略性地顯示構成本發明之晶片位置測定裝置1之各部。 Fig. 1 is a schematic diagram showing an overall configuration of an example of an embodiment of the present invention. Each part constituting the wafer position measuring device 1 of the present invention is schematically shown in FIG. 1 .

晶片位置測定裝置1係測定分開配置於基板W上之複數個晶片零件C各者之位置者。具體而言,晶片位置測定裝置1具備基板保持部2、攝像部3、相對移動部4、晶片位置算出部5、控制部CN等。 The wafer position measuring device 1 measures the position of each of a plurality of wafer components C separately arranged on the substrate W. Specifically, the wafer position measurement device 1 includes a substrate holding unit 2 , an imaging unit 3 , a relative movement unit 4 , a wafer position calculation unit 5 , a control unit CN, and the like.

基板保持部2係保持基板W者。 The substrate holding unit 2 holds the substrate W. As shown in FIG.

具體而言,基板保持部2係一面將基板W自下表面側保持水平狀態一面支撐者。更具體而言,基板保持部2具備上表面水平之基板載置台20。 Specifically, the substrate holding unit 2 supports the substrate W while maintaining a horizontal state from the lower surface side. More specifically, the substrate holding unit 2 includes a substrate mounting table 20 whose upper surface is horizontal.

基板載置台20在與基板W接觸之部分設有槽部或孔部,該等槽部或 孔部經由切換閥等連接於真空泵等負壓產生機構。且,基板保持部2可藉由將該等槽部或孔部切換成負壓狀態或大氣釋放狀態,而保持或解除保持基板W。 The substrate mounting table 20 is provided with a groove or a hole at a portion in contact with the substrate W. These grooves or holes The hole is connected to a negative pressure generating mechanism such as a vacuum pump through a switching valve or the like. Furthermore, the substrate holding unit 2 can hold or release the substrate W by switching these grooves or holes to a negative pressure state or an air release state.

攝像部3係將設定於基板W上之特定區域分割成複數個分割攝像區域進行拍攝者。此處所言之設定於基板W上之特定區域,係包含配置於基板W上之成為位置測定對象之所有晶片零件之區域(換言之,大的區域)。且,攝像部3係將該特定區域分割成複數個分割攝像區域(換言之,小的區域。亦稱為局部區域)進行拍攝者。 The imaging unit 3 divides a specific area set on the substrate W into a plurality of divided imaging areas to take an image. The specific area set on the substrate W mentioned here includes the area (in other words, a large area) of all the wafer components arranged on the substrate W and used as the object of position measurement. Then, the imaging unit 3 divides the specific area into a plurality of divided imaging areas (in other words, small areas. Also referred to as local areas) to capture images.

具體而言,晶片零件之排列(個數或間距等)或要求測定精度因每個品種而異,分割攝像區域之尺寸或位置係與每個品種關聯並登錄於控制部CN等。 Specifically, the arrangement (number, pitch, etc.) of wafer components or the required measurement accuracy differs for each type, and the size or position of the divided imaging area is associated with each type and registered in the control unit CN or the like.

更具體而言,攝像部3具備鏡筒30、照明部31、半反射鏡32、對物透鏡33a、33b、物鏡旋轉器機構34、攝像相機35等。 More specifically, the imaging unit 3 includes a lens barrel 30 , an illumination unit 31 , a half mirror 32 , objective lenses 33 a and 33 b , an objective lens rotator mechanism 34 , an imaging camera 35 , and the like.

鏡筒30係將照明部31、半反射鏡32、對物透鏡33a、33b、物鏡旋轉器機構34、攝像相機35等以特定之姿勢固定,而引導照明光或觀察光者。鏡筒30經由連結配件等(未圖示)安裝於裝置框架1f。 The lens barrel 30 fixes the illuminating part 31, the half mirror 32, the objective lenses 33a, 33b, the objective lens rotator mechanism 34, the imaging camera 35, etc. in a specific posture, and guides the illumination light or observation light. The lens barrel 30 is attached to the device frame 1f via a coupling fitting or the like (not shown).

照明部31係放出拍攝所需之照明光L1者。具體而言,照明部31可例示雷射二極體或金屬鹵化物燈、氙氣燈、LED(Light Emitting Diode:發光二極體)照明等。 The illuminating unit 31 emits the illuminating light L1 required for photographing. Specifically, the illuminating part 31 can illustrate a laser diode, a metal halide lamp, a xenon lamp, LED (Light Emitting Diode: Light Emitting Diode) illumination, etc.

半反射鏡32係使自照明部31放出之照明光L1反射並照射於基板W側,使自基板W側入射之光(反射光、散射光)L2通過攝像相機35側者。 The half mirror 32 reflects the illumination light L1 emitted from the illumination unit 31 and irradiates the substrate W side, and passes the light (reflected light, scattered light) L2 incident from the substrate W side to the imaging camera 35 side.

對物透鏡33a、33b係以各不相同之特定之觀察倍率,使工件W上之攝像區域之像成像於攝像相機35者。 The objective lenses 33a and 33b form images of the imaging area on the workpiece W on the imaging camera 35 at different specific observation magnifications.

物鏡旋轉器機構34係切換使用對物透鏡33a、33b之何者者。具體而言,物鏡旋轉器機構34係基於手動或來自外部之信號控制,每特定角度旋轉及靜止者。 The objective lens rotator mechanism 34 switches which of the objective lenses 33a and 33b is used. Specifically, the objective lens rotator mechanism 34 is based on manual or external signal control, and is rotated and stationary at a specific angle.

攝像相機35係拍攝工件W上之攝像區域F,取得圖像者。取得之圖像係作為影像信號或影像資料,輸出至外部(本發明中係後述細節之晶片位置算出部)。 The imaging camera 35 captures an image of the imaging area F on the workpiece W and obtains an image. The acquired image is output as an image signal or image data to the outside (in the present invention, it is a wafer position calculation unit described in detail later).

相對移動部4係使基板保持部2與攝像部3相對移動者。 The relative movement unit 4 is for relatively moving the substrate holding unit 2 and the imaging unit 3 .

具體而言,相對移動部4係具備X軸滑塊41、Y軸滑塊42及旋轉機構43而構成。 Specifically, the relative movement unit 4 is configured to include an X-axis slider 41 , a Y-axis slider 42 , and a rotation mechanism 43 .

X軸滑塊41係安裝於裝置框架1f上,使Y軸滑塊42於X方向以任意速度移動,於任意位置靜止者。具體而言,X軸滑塊係以於X方向延伸之1對導軌、於該導軌上移動之滑塊部、及使滑塊部移動及靜止之滑塊驅動部構成。滑塊驅動部可以組合有藉由來自控制部CN之信號控制而旋轉並靜止之伺服馬達或脈衝馬達與滾珠螺桿機構者,或線性馬達機構等構成。又,於X軸滑塊41,具備用以檢測滑塊部之當前位置或移動量之編碼器。另,該編碼器可例示以特定間距於稱為線性標度尺之直線狀構件雕刻細小凹凸者,或檢測使滾珠螺桿旋轉之馬達之旋轉角度之旋轉編碼器等。 The X-axis slider 41 is installed on the device frame 1f, so that the Y-axis slider 42 moves at an arbitrary speed in the X direction and remains stationary at an arbitrary position. Specifically, the X-axis slider is composed of a pair of guide rails extending in the X direction, a slider portion that moves on the guide rails, and a slider driving portion that moves and stops the slider portion. The slider driving unit may be composed of a combination of a servo motor or a pulse motor and a ball screw mechanism, a linear motor mechanism, or a linear motor mechanism that rotates and remains stationary under the control of a signal from the control unit CN. In addition, the X-axis slider 41 is equipped with an encoder for detecting the current position or the movement amount of the slider part. In addition, examples of the encoder include one that engraves fine unevenness on a linear member called a linear scale at a specific pitch, or a rotary encoder that detects the rotation angle of a motor that rotates a ball screw, and the like.

Y軸滑塊42係基於自控制部CN輸出之控制信號,使旋轉機構43於Y 方向以任意速度移動,於任意位置靜止者。具體而言,Y軸滑塊係以於Y方向延伸之1對導軌、於該導軌上移動之滑塊部、及使滑塊部移動及靜止之滑塊驅動部構成。滑塊驅動部可以組合有藉由來自控制部CN之信號控制而旋轉並靜止之伺服馬達或脈衝馬達與滾珠螺桿機構者,或線性馬達機構等構成。又,於Y軸滑塊42,具備用以檢測滑塊部之當前位置或移動量之編碼器。另,該編碼器可例示以特定間距於稱為線性標度尺之直線狀構件雕刻細小凹凸者,或檢測使滾珠螺桿旋轉之馬達之旋轉角度之旋轉編碼器等。 The Y-axis slide block 42 is based on the control signal output from the control part CN, so that the rotation mechanism 43 is positioned at the Y axis. One that moves at any speed in any direction and remains stationary at any position. Specifically, the Y-axis slider is composed of a pair of guide rails extending in the Y direction, a slider portion that moves on the guide rails, and a slider driving portion that moves and stops the slider portion. The slider driving unit may be composed of a combination of a servo motor or a pulse motor and a ball screw mechanism, a linear motor mechanism, or a linear motor mechanism that rotates and remains stationary under the control of a signal from the control unit CN. In addition, the Y-axis slider 42 is equipped with an encoder for detecting the current position or the movement amount of the slider part. In addition, examples of the encoder include one that engraves fine unevenness on a linear member called a linear scale at a specific pitch, or a rotary encoder that detects the rotation angle of a motor that rotates a ball screw, and the like.

旋轉機構43係使基板載置台20於θ方向以任意速度旋轉,以任意角度靜止者。具體而言,旋轉機構43可例示直驅馬達等藉由來自外部機器之信號控制而以任意角度旋轉/靜止者。於旋轉機構43之旋轉側之構件之上,安裝有基板保持部2之基板載置台20。 The rotation mechanism 43 rotates the substrate stage 20 at an arbitrary speed in the θ direction, and is stationary at an arbitrary angle. Specifically, the rotation mechanism 43 can be exemplified by a direct drive motor or the like that is controlled by a signal from an external device to rotate/stationary at an arbitrary angle. On the rotation side member of the rotation mechanism 43, the substrate mounting table 20 of the substrate holding part 2 is attached.

由於相對移動部4採用此種構成,故可於保持成為檢查對象之基板W之狀態下,使基板W相對於攝像部3於XYθ方向分別獨立或複合地以特定速度或角度相對移動,或以任意位置、角度靜止。 Since the relative moving part 4 adopts such a configuration, it is possible to relatively move the substrate W relative to the imaging part 3 at a specific speed or angle in the XYθ direction, independently or in combination, while holding the substrate W to be inspected, or by Static at any position and angle.

控制部CN可擔負例如如以下之功能或作用。 The control unit CN can take on, for example, the following functions or roles.

‧對基板保持部2保持/解除控制基板W ‧Holding/releasing the control board W on the board holding part 2

‧控制物鏡旋轉器機構34,切換對物透鏡 ‧Control the objective lens rotator mechanism 34 to switch the objective lens

‧對攝像相機35輸出攝像觸發 ‧Output camera trigger to video camera 35

‧相對移動部4之驅動控制:一面監視X軸滑塊41、Y軸滑塊22、旋 轉機構23之當前位置,一面輸出驅動用信號之功能 ‧Drive control of the relative moving part 4: while monitoring the X-axis slider 41, the Y-axis slider 22, the rotation The current position of the rotating mechanism 23, while outputting the function of the driving signal

‧攝像位置之登錄 ‧Registration of camera position

‧基板品種之切換 ‧Switching of substrate types

即,控制部CN可驅動控制相對移動部4,且一面變更設定於基板W上之分割攝像區域之場所,一面對攝像部3輸出攝像觸發。再者,可根據檢查品種,切換攝像倍率或視野尺寸,一面改變拍攝之間隔一面輸出攝像觸發,可取得期望之分割攝像圖像。 That is, the control unit CN can drive and control the relative movement unit 4 , and output an imaging trigger to the imaging unit 3 while changing the position of the divided imaging area set on the substrate W. Furthermore, it is possible to switch the imaging magnification or field of view size according to the type of inspection, and output imaging triggers while changing the interval between imaging, so that desired split imaging images can be obtained.

另,攝像觸發之輸出可例示如下方式。 In addition, the output of the camera trigger can be exemplified as follows.

‧一面於X方向掃描移動,一面每移動特定距離使照明光L1發光極短時間(所謂頻閃發光)之方式。 ‧The method of scanning and moving in the X direction, and making the illumination light L1 emit light for a very short time (so-called strobe light) every time a certain distance is moved.

‧或者,於特定位置移動及靜止,照射照明光L1並拍攝(所謂步進&重複)之方式。 ‧Alternatively, it is a method of moving and standing still at a specific position, irradiating illumination light L1 and shooting (so-called step & repeat).

又,所謂攝像觸發,意指對攝像相機35或圖像處理裝置(未圖示)之圖像捕獲指示、照明光L1之發光指示等。具體而言,作為攝像觸發,(實例1)於可以攝像相機35拍攝之時間(所謂曝光時間)之期間,使照明光L1頻閃發光,或(實例2)於照射照明光L1之時間內進行拍攝。或者,攝像觸發不限於對攝像相機35之指示,亦可為(實例3)對取得圖像之圖像處理裝置之圖像捕獲指示。藉此,亦可對應於自攝像相機35逐次輸出影像信號或影像資料之形態。 In addition, the term "imaging trigger" means an instruction to capture an image to the imaging camera 35 or an image processing device (not shown), an instruction to emit light of the illumination light L1, and the like. Specifically, as an imaging trigger, (Example 1) stroboscopically emits the illumination light L1 during the time that the imaging camera 35 can take pictures (so-called exposure time), or (Example 2) performs during the time when the illumination light L1 is irradiated. shoot. Alternatively, the imaging trigger is not limited to an instruction to the imaging camera 35, but may also be (Example 3) an image capture instruction to an image processing device that acquires an image. Thereby, it is also possible to correspond to the form in which image signals or image data are sequentially output from the imaging camera 35 .

更具體而言,控制部CN係以電腦或可程式化邏輯控制器等(即硬體)、及其執行程式等(即軟體)構成。再者,控制部CN具備本發明之晶片位置算出部5、尺度修正部6等,作為以硬體及軟體構成之功能區塊之一部分。 More specifically, the control part CN is comprised with a computer or a programmable logic controller etc. (ie, hardware), and its execution program etc. (ie, software). Furthermore, the control unit CN includes the wafer position calculation unit 5, the scale correction unit 6, etc. of the present invention as part of functional blocks constituted by hardware and software.

圖2係顯示將本發明具體化之形態之一例之攝像情況之概念圖。 Fig. 2 is a conceptual diagram showing an imaging situation of an example of an embodiment of the present invention.

圖2顯示攝像部3之攝像相機45相對於基板W於箭頭Vs所示方向相對移動,且拍攝分開配置於基板W上之複數個晶片零件C(1,1)~C(9,2)之情況。 FIG. 2 shows that the imaging camera 45 of the imaging unit 3 moves relative to the substrate W in the direction indicated by the arrow Vs, and takes pictures of a plurality of chip parts C(1,1)~C(9,2) separately arranged on the substrate W. Condition.

具體而言,以分割攝像區域F(1)、F(2)、F(3)、F(4)之順序進行拍攝,分割攝像區域F(1)中,拍攝晶片零件C(1,1)~C(3,2),分割攝像區域F(2)中,拍攝晶片零件C(3,1)~C(5,2),分割攝像區域F(3)中,拍攝晶片零件C(5,1)~C(7,2),分割攝像區域F(4)中,拍攝晶片零件C(7,1)~C(9,2)。 Specifically, shooting is performed in the order of the divided imaging areas F(1), F(2), F(3), and F(4), and in the divided imaging area F(1), the wafer component C(1, 1) is captured. ~C(3,2), in the divided imaging area F(2), photograph the wafer parts C(3,1)~C(5,2), in the divided imaging area F(3), photograph the wafer parts C(5, 1)~C(7, 2), in the divided imaging area F(4), the wafer parts C(7, 1)~C(9, 2) are photographed.

且,分割攝像區域F(1)與分割攝像區域F(2)係以不僅互相隣接,且一部分區域於兩者被重複拍攝之方式設定。將該隣接且被重複拍攝之區域稱為重複攝像區域M(1)。同樣地,將分割攝像區域F(2)與分割攝像區域F(3)之重複攝像區域稱為M(2),將分割攝像區域F(3)與分割攝像區域F(4)之重複攝像區域稱為M(3)。 In addition, the divided imaging area F(1) and the divided imaging area F(2) are set not only to be adjacent to each other, but also to have a part of the area overlapped with both. This adjacent and repeatedly captured area is referred to as a repeated imaging area M(1). Similarly, the overlapping imaging area of the divided imaging area F(2) and the divided imaging area F(3) is referred to as M(2), and the overlapping imaging area of the divided imaging area F(3) and the divided imaging area F(4) Called M(3).

且,於分割攝像區域中包含至少2個以上晶片零件,且,該晶片零件中之至少1個晶片零件係作為隣接之分割攝像區域之兩者所含之重複攝像 晶片零件設定。 And, at least two or more wafer parts are included in the divided imaging area, and at least one of the wafer parts is used as repeated imaging included in two adjacent divided imaging areas Wafer part setup.

具體而言,以於重複攝像區域M(1)中包含晶片零件C(3,1)、C(3,2),於重複攝像區域M(2)中包含晶片零件C(5,1)、C(5,2),於重複攝像區域M(3)中包含晶片零件C(7,1)、C(7,2)之方式,設定分割攝像區域F(1)~F(4)之攝像位置。 Specifically, to include wafer components C(3,1) and C(3,2) in the repeated imaging region M(1), and to include wafer components C(5,1) and C(3,2) in the repeated imaging region M(2). C(5, 2), including chip components C(7, 1) and C(7, 2) in the repeated imaging area M (3), setting the imaging of the divided imaging area F (1) ~ F (4) Location.

晶片位置算出部5係基於攝像部3所拍攝之圖像,算出分割攝像區域內所含之晶片零件各者之位置者。再者,晶片位置算出部5係根據與先拍攝之上述分割攝像區域所含之其他晶片零件之位置關係,算出重複攝像晶片零件各者之位置,將後拍攝之上述分割攝像區域所含之上述重複攝像晶片零件除外之其他晶片零件各者之位置,根據與該重複攝像晶片零件之位置關係算出者。 The wafer position calculation unit 5 calculates the position of each of the wafer components included in the divided imaging area based on the image captured by the imaging unit 3 . Furthermore, the wafer position calculation unit 5 calculates the positions of each of the wafer parts to be repeatedly imaged based on the positional relationship with other wafer parts contained in the above-mentioned divided imaging area captured earlier, and then calculates the position of each of the wafer parts included in the above-mentioned divided imaging area captured later. The positions of other chip components other than the repetitive imaging chip component are calculated based on the positional relationship with the repetitive imaging chip component.

圖3係顯示將本發明具體化之形態之一例之晶片零件各者之位置關係之俯視圖。圖3例示分割攝像區域F(1)、F(2)與各晶片零件C(1,1)~C(5,2)之位置關係。 Fig. 3 is a plan view showing the positional relationship of each of the wafer components in an example of an embodiment of the present invention. FIG. 3 exemplifies the positional relationship between the divided imaging regions F(1), F(2) and each chip component C(1, 1)-C(5, 2).

具體而言,晶片位置算出部5係算出拍攝之分割攝像區域F(1)所含之晶片零件C(1,1)~C(3,2)之相互位置者。例如,以晶片零件各者之左下角之位置為基準,算出以下。 Specifically, the wafer position calculation unit 5 calculates the mutual positions of the wafer components C(1, 1) to C(3, 2) included in the captured divided imaging area F(1). For example, based on the position of the lower left corner of each chip component, the following is calculated.

‧晶片零件C(2,1)相對於晶片零件C(1,1)之X方向之偏移量dx1及Y方向之偏移量dy1 ‧The offset dx1 of the chip part C(2, 1) relative to the chip part C(1, 1) in the X direction and the offset dy1 in the Y direction

‧晶片零件C(3,1)相對於晶片零件C(2,1)之X方向之偏移量dx2及Y方向之偏移量dy2 ‧The offset dx2 of the chip part C (3, 1) relative to the chip part C (2, 1) in the X direction and the offset dy2 of the Y direction

‧晶片零件C(1,2)相對於晶片零件C(1,1)之X方向之偏移量dx20及Y方向之偏移量dy20 ‧The offset dx20 of the chip part C (1, 2) relative to the chip part C (1, 1) in the X direction and the offset dy20 of the Y direction

‧晶片零件C(2,2)相對於晶片零件C(1,2)之X方向之偏移量dx21及Y方向之偏移量dy21 ‧The offset dx21 of the chip part C (2, 2) relative to the chip part C (1, 2) in the X direction and the offset dy21 of the Y direction

‧晶片零件C(3,2)相對於晶片零件C(2,2)之X方向之偏移量dx22及Y方向之偏移量dy22 ‧The offset dx22 of the chip part C (3, 2) relative to the chip part C (2, 2) in the X direction and the offset dy22 of the Y direction

更具體而言,若將晶片零件C(1,1)之位置設為(X11,Y11),則晶片位置算出部5基於如以下之計算式,算出晶片零件各者之位置。 More specifically, assuming that the position of the wafer component C (1, 1) is (X11, Y11), the wafer position calculation unit 5 calculates the positions of each of the wafer components based on the following calculation formula.

‧晶片零件C(2,1)之位置(X21,Y21)=(X11+dx1,Y11+dy1) ‧Position (X21, Y21)=(X11+dx1, Y11+dy1) of chip part C(2, 1)

‧晶片零件C(3,1)之位置(X31,Y31)=(X11+dx1+dx2,Y11+dy1+dy2) ‧Position (X31, Y31)=(X11+dx1+dx2, Y11+dy1+dy2) of chip part C(3, 1)

‧晶片零件C(1,2)之位置(X12,Y12)=(X11+dx20,Y11+dy20) ‧Position (X12, Y12)=(X11+dx20, Y11+dy20) of chip part C(1, 2)

‧晶片零件C(2,2)之位置(X22,Y22)=(X11+dx20+dx21,Y11+dy20+dy21) ‧Position (X22, Y22)=(X11+dx20+dx21, Y11+dy20+dy21) of chip part C(2, 2)

‧晶片零件C(3,2)之位置(X32,Y32)=(X11+dx20+dx21+dx22,Y11+dy20+dy21+dy22) ‧Position (X32, Y32) of chip part C(3, 2)=(X11+dx20+dx21+dx22, Y11+dy20+dy21+dy22)

接著,算出拍攝之分割攝像區域F(2)所含之晶片零件C(3,1)~C(5,2)之相互位置。與上述同樣地,以晶片零件各者之左下角之位置為基準,算出以下。 Next, the mutual positions of the chip components C(3, 1) to C(5, 2) included in the captured divided imaging area F(2) are calculated. In the same manner as above, the following calculations were performed based on the position of the lower left corner of each of the chip components.

‧晶片零件C(4,1)相對於晶片零件C(3,1)之X方向之偏移量dx3及Y方向之偏移量dy3 ‧The offset dx3 of the chip part C (4, 1) relative to the chip part C (3, 1) in the X direction and the offset dy3 in the Y direction

‧晶片零件C(5,1)相對於晶片零件C(4,1)之X方向之偏移量dx4及Y方向之偏移量dy4 ‧The offset dx4 of the chip part C (5, 1) relative to the chip part C (4, 1) in the X direction and the offset dy4 in the Y direction

‧晶片零件C(4,2)相對於晶片零件C(3,2)之X方向之偏移量dx23及Y方向之偏移量dy23 ‧The offset dx23 of the chip part C (4, 2) relative to the chip part C (3, 2) in the X direction and the offset dy23 in the Y direction

‧晶片零件C(5,2)相對於晶片零件C(4,2)之X方向之偏移量dx24及Y方向之偏移量dy24 ‧The offset dx24 of the chip part C (5, 2) relative to the chip part C (4, 2) in the X direction and the offset dy24 in the Y direction

更具體而言,晶片位置算出部5基於如以下之計算式,算出各者之位置。 More specifically, the wafer position calculation unit 5 calculates each position based on the following calculation formula.

‧由於晶片零件C(3,1)或晶片零件C(3,2)之位置如上述,故晶片零件C(4,1)之位置為(X11+dx1+dx2+dx3,Y11+dy1+dy2+dy3) ‧Since the position of chip part C(3,1) or chip part C(3,2) is as above, the position of chip part C(4,1) is (X11+dx1+dx2+dx3, Y11+dy1+dy2 +dy3)

‧晶片零件C(5,1)之位置為(X11+dx1+dx2+dx3+dx4,Y11+dy1+dy2+dy3+dy4) ‧The position of chip part C(5, 1) is (X11+dx1+dx2+dx3+dx4, Y11+dy1+dy2+dy3+dy4)

‧晶片零件C(4,2)之位置為(X11+dx20+dx21+dx22+dx23,Y11+dy20+dy21+dy22+dy23) ‧The position of chip part C (4, 2) is (X11+dx20+dx21+dx22+dx23, Y11+dy20+dy21+dy22+dy23)

‧晶片零件C(5,2)之位置為(X11+dx20+dx21+dx22+dx23+dx24,Y11+dy20+dy21+dy22+dy23+dy24) ‧The position of chip part C (5, 2) is (X11+dx20+dx21+dx22+dx23+dx24, Y11+dy20+dy21+dy22+dy23+dy24)

針對其他晶片零件C(6,1)等之位置,與上述同樣地算出。 The positions of other wafer components C(6, 1) etc. are calculated in the same manner as above.

由於採用此種構成,故發明之晶片位置測定裝置1可以最初之攝像區域所含之1個晶片零件之位置為基準,算出其他晶片零件各者之位置。 Due to the adoption of such a configuration, the wafer position measuring device 1 of the invention can calculate the positions of other wafer components based on the position of one wafer component included in the initial imaging area.

[其他形態] [Other forms]

另,於上述,顯示為了算出晶片零件各者之位置,而測定相鄰晶片零件彼此之X方向之間隔或Y方向之偏移量,累積地算出之步驟。 In addition, in the above, in order to calculate the position of each of the wafer components, the steps of measuring the distance between adjacent wafer components in the X direction or the offset in the Y direction and calculating them cumulatively are shown.

該情形時,位於最後拍攝之分割攝像區域之晶片零件各者之位置係之前的晶片零件彼此之間隔或偏移量之相加。因此,測定解析度以下之誤差蓄積於各個間隔或偏移量中,誤差累積於位於自成為最初基準之晶片零件遠離之部位之晶片零件之算出位置。於是,產生無法對所有晶片零件,以期望精度測定之擔憂。為消除此種擔憂(即,防止累積誤差之產生),較佳為以如下述(1)、(2)之任一者或兩者所示之步驟算出位置。 In this case, the position of each of the wafer parts located in the last divided imaging area is the sum of the distances or offsets between the previous wafer parts. Therefore, an error below the measurement resolution is accumulated in each pitch or offset, and an error is accumulated in the calculated position of the wafer part located away from the wafer part serving as the primary reference. Therefore, there is a concern that all wafer components cannot be measured with the desired accuracy. In order to eliminate this concern (that is, to prevent the generation of accumulated errors), it is preferable to calculate the position by the steps shown in either one or both of the following (1) and (2).

(1)根據相對於成為1個基準之晶片零件之間隔或偏移量,算出1個分割攝像區域內之晶片零件各者之位置。 (1) Calculate the positions of each of the wafer components in one divided imaging area based on the distance or offset from the wafer components serving as one reference.

圖4係顯示將本發明具體化之其他形態之一例之晶片零件各者之位置關係之俯視圖。圖4例示分割攝像區域F(1)、F(2)與各晶片零件C(1,1)~C(5,2)之位置關係。 Fig. 4 is a plan view showing the positional relationship of each of the wafer components as an example of another embodiment of the present invention. FIG. 4 exemplifies the positional relationship between the divided imaging regions F(1), F(2) and each of the chip components C(1, 1) to C(5, 2).

具體而言,晶片位置算出部5可如以下算出拍攝之分割攝像區域F(1)所含之晶片零件C(1,1)、C(2,1)、C(5,1)、C(6,1)等之相互位置。 Specifically, the wafer position calculation unit 5 can calculate the wafer components C(1, 1), C(2, 1), C(5, 1), C( 6, 1) The mutual position of etc.

‧晶片零件C(2,1)之位置(X21,Y21)根據晶片零件C(2,1)相對於晶片零件C(1,1)之X方向之偏移量dx1及Y方向之偏移量dy1,為(X21,Y21)=(X11+dx1,Y11+dy1) ‧The position (X21, Y21) of the chip part C (2, 1) is based on the offset dx1 of the chip part C (2, 1) relative to the chip part C (1, 1) in the X direction and the offset in the Y direction dy1, for (X21, Y21)=(X11+dx1, Y11+dy1)

‧晶片零件C(5,1)之位置(X51,Y51)根據晶片零件C(5,1)相對於晶片零件C(1,1)之X方向之偏移量dx4及Y方向之偏移量dy4,為(X51,Y51)=(X11+dx4,Y11+dy4) ‧The position (X51, Y51) of the chip part C (5, 1) is based on the offset dx4 of the chip part C (5, 1) relative to the chip part C (1, 1) in the X direction and the offset in the Y direction dy4, for (X51, Y51)=(X11+dx4, Y11+dy4)

‧晶片零件C(6,1)之位置(X61,Y61)根據晶片零件C(6,1)相對於晶片零件C(1,1)之X方向之偏移量dx5及Y方向之偏移量dy5,為(X51,Y51)=(X11+dx5,Y11+dy5) ‧The position (X61, Y61) of the chip part C (6, 1) is based on the offset dx5 of the chip part C (6, 1) relative to the chip part C (1, 1) in the X direction and the offset in the Y direction dy5, for (X51, Y51)=(X11+dx5, Y11+dy5)

再者,晶片位置算出部5可如以下算出拍攝之分割攝像區域F(2)所含之晶片零件C(6,1)、C(7,1)、C(11,1)等之相互位置。 Furthermore, the wafer position calculation unit 5 can calculate the mutual positions of the wafer components C(6,1), C(7,1), C(11,1) included in the captured divided imaging area F(2) as follows .

‧晶片零件C(7,1)之位置(X71,Y71)根據晶片零件C(7,1)相對於晶片零件C(6,1)之X方向之偏移量dx6及Y方向之偏移量dy6,為(X71,Y71)=(X61+dx6,Y61+dy6) ‧The position (X71, Y71) of the chip part C (7, 1) is based on the offset dx6 of the chip part C (7, 1) relative to the chip part C (6, 1) in the X direction and the offset in the Y direction dy6, for (X71, Y71)=(X61+dx6, Y61+dy6)

‧晶片零件C(11,1)之位置(X111,Y111)根據晶片零件C(11,1)相對於晶片零件C(6,1)之X方向之偏移量dx10及Y方向之偏移量dy10,為(X111,Y111)=(X61+dx10,Y61+dy10) ‧The position (X111, Y111) of the chip part C (11, 1) is based on the offset dx10 of the chip part C (11, 1) relative to the chip part C (6, 1) in the X direction and the offset in the Y direction dy10, as (X111, Y111)=(X61+dx10, Y61+dy10)

另,此處說明了著眼於晶片零件C(1,1)~C(6,1)算出位置之步驟,但對於其他晶片C(2,1)~C(11,3),亦可同樣地(即,以晶片零件C(1,1)、C(6,1)為基準)算出各者之位置。 In addition, the steps of calculating the position focusing on the chip parts C(1,1)~C(6,1) are described here, but the same can be done for other chips C(2,1)~C(11,3). (That is, based on the wafer components C(1, 1) and C(6, 1)), the positions of each are calculated.

(2)使用主基板算出分割攝像區域之測定位置,對晶片零件各者之位置進行尺度修正。 (2) Calculate the measurement position of the divided imaging area using the main board, and perform scale correction on the position of each chip component.

具體而言,設為除了上述晶片位置測定裝置1之構成外,亦具備尺度修正部之構成。且,將複數個基準標記之相互位置已知之主基板保持於上述基板保持部,基於配置於主基板之上述基準標記之相互位置,進行對於以上述晶片位置算出部算出之上述晶片零件各者之位置之修正。 Specifically, in addition to the configuration of the wafer position measuring device 1 described above, a configuration is provided that also includes a dimension correction unit. Furthermore, the main substrate whose mutual positions of the plurality of fiducial marks are known is held in the above-mentioned substrate holding part, and based on the mutual positions of the above-mentioned fiducial marks arranged on the main board, each of the above-mentioned wafer components calculated by the above-mentioned wafer position calculation part is performed. Correction of position.

圖5係顯示將本發明具體化之其他形態之一例之主基板與分割攝像區域之位置關係之俯視圖。於圖5例示複數個基準標記FMa、FMk、FMq、FMz之相互位置已知之主基板MW之俯視圖。 FIG. 5 is a plan view showing the positional relationship between the main substrate and the divided imaging regions as an example of another embodiment of the present invention. FIG. 5 exemplifies a plan view of the main substrate MW whose mutual positions of the plurality of fiducial marks FMa, FMk, FMq, and FMz are known.

若將主基板MW保持於晶片位置測定裝置1之基板保持部2並使之相對移動,則成為如於分割攝像區域F(a)、F(k)之視野,觀察基準標記FMa、FMk之配置。且,基準標記FMa、FMk分別為圓形,該等圓之中心係於X方向以間隔Rxm配置。另,該間隔dxm藉由高精度之測長裝置(例如,組合有使用雷射干涉儀之移動機構、及標記位置檢測裝置等者),已知正確位置(亦稱為相對距離、相對座標)。具體而言,將該間隔Rxm設為100.00mm,於以下進行說明。 When the main substrate MW is held on the substrate holding unit 2 of the wafer position measuring device 1 and relatively moved, the arrangement of the fiducial marks FMa and FMk is observed as in the field of view of the divided imaging regions F(a) and F(k). . Furthermore, the fiducial marks FMa and FMk are respectively circular, and the centers of these circles are arranged at intervals Rxm in the X direction. In addition, the distance dxm is known by a high-precision length measuring device (for example, a combination of a moving mechanism using a laser interferometer and a mark position detection device, etc.), and the correct position (also called relative distance, relative coordinates) is known. . Specifically, this interval Rxm is set to 100.00 mm, and will be described below.

首先,於晶片位置算出部5中以上述步驟算出分割攝像區域F(a)中觀察到之晶片零件C(a,1)與分割攝像區域F(k)中觀察到之C(k,1)之相互位置,例如將互相之X方向之間隔dxk設為100.10mm。 First, the wafer position calculation unit 5 calculates the wafer component C(a, 1) observed in the divided imaging area F(a) and C(k, 1) observed in the divided imaging area F(k) by the above-mentioned steps. For the mutual positions, for example, the distance dxk in the X direction is set to 100.10 mm.

且,將晶片零件C(a,1)相對於基準標記FMa之X方向之偏移量設為δxa,將晶片零件C(k,1)相對於基準標記FMk之X方向之偏移量設為 δxk,以晶片位置算出部5算出各者之偏移量後,例如將δxa設為0.01mm,將δxk設為0.01mm。於是,晶片位置算出部5中,基準標記FMa、FMk之間隔dxm算出為100.12mm。但,由於原本應算出為100.00mm,故將該等值之比例Rxm/dxm(=100.00/100.12=0.9988)作為尺度修正係數而預先登錄,加上該係數而算出晶片零件各者之X方向之位置。即,上述例之情形時,若以100.10mm算出修正前之dxk,則加上尺度修正係數,將修正後之dxk值輸出為100.10×0.9988=99.98mm。 And, the displacement amount of the chip part C(a, 1) relative to the X direction of the fiducial mark FMa is δxa, and the displacement amount of the wafer part C(k, 1) relative to the X direction of the fiducial mark FMk is denoted as For δxk, the wafer position calculation unit 5 calculates the amount of displacement of each of them, for example, δxa is set to 0.01 mm, and δxk is set to 0.01 mm. Then, the interval dxm between the reference marks FMa and FMk is calculated to be 100.12 mm in the wafer position calculation unit 5 . However, since it should be calculated as 100.00mm originally, the ratio Rxm/dxm (=100.00/100.12=0.9988) of the equivalent value is registered in advance as a scale correction coefficient, and the X-direction ratio of each chip part is calculated by adding this coefficient. Location. That is, in the case of the above example, if the dxk before correction is calculated as 100.10mm, the scale correction coefficient is added, and the corrected dxk value is output as 100.10×0.9988=99.98mm.

另,上述例示了對於晶片零件C(k,1)之尺度修正,但如此算出之尺度修正係數亦可適應於算出其他晶片零件之位置之情形。又,上述說明了對於X方向進行尺度修正之步驟,但對於Y方向亦可同樣地(Y方向之情形時,以基準標記FMa、FMq之間隔Ryq等為基準)算出尺度修正係數,考慮該尺度修正係數,算出晶片零件各者之Y方向之位置。 In addition, the above exemplifies the scale correction for the chip component C(k, 1), but the scale correction coefficient calculated in this way can also be adapted to the situation of calculating the position of other chip components. In addition, the procedure for performing scale correction in the X direction has been described above, but the scale correction coefficient can be calculated in the same way for the Y direction (in the case of the Y direction, the interval Ryq between the reference marks FMa and FMq is used as a reference), and the scale correction factor is considered. The correction coefficient is used to calculate the position of each chip component in the Y direction.

藉由設為此種構成,可減輕或消除位於遠處之晶片零件之測定位置之累積誤差。 With such a configuration, it is possible to reduce or eliminate cumulative errors in the measurement positions of distant wafer components.

[其他形態] [Other forms]

另,於上述,於以相對移動部4之X軸滑塊41與Y軸滑塊42之正交度為期望之精度加以組裝之前提下進行了說明。但,為方便組裝機器,於X軸滑塊41與Y軸滑塊42之正交度略微偏移,或無法期待偏移之改善之情形,或謀求更高精度之測定之情形時,較佳以如下之步驟或構成,修正並算出晶片零件各者之位置。 In addition, in the above description, the X-axis slider 41 and the Y-axis slider 42 of the relative movement unit 4 are assembled with the desired precision in terms of orthogonality. However, for the convenience of assembling the machine, when the orthogonality between the X-axis slider 41 and the Y-axis slider 42 is slightly offset, or when the improvement of the offset cannot be expected, or when higher-precision measurement is required, it is better With the following steps or configurations, the positions of each chip component are corrected and calculated.

具體而言,使用主基板MW修正正交度。於主基板MW,如圖5所示,基準標記FMa、FMk、FMq、FMz各者之中心位置配置於縱Ryq×橫Rxm之長方形或正方形之矩形之頂點。因此,使相對移動部4之X軸滑塊41或Y軸滑塊42移動,以攝像部3拍攝該等基準標記FMa、FMk、FMq、FMz,取得各者之中心位置。且,由使相對移動部4之X軸滑塊41移動而拍攝基準標記FMa、FMk時之X方向之間隔及Y方向之偏移量、及使Y軸滑塊42移動而拍攝基準標記FMa、FMq時之Y方向之間隔及X方向之偏移量,算出X軸滑塊41與Y軸滑塊42之正交度偏移何種程度。且,晶片位置算出部5中,以消除因該正交度所致之偏移量之方式,修正並算出晶片零件各者之位置。 Specifically, the degree of orthogonality is corrected using the main substrate MW. On the main substrate MW, as shown in FIG. 5 , the center positions of each of the reference marks FMa, FMk, FMq, and FMz are arranged at the vertices of a rectangle or a square of vertical Ryq×lateral Rxm. Therefore, the X-axis slider 41 or the Y-axis slider 42 of the relative movement unit 4 is moved, and the imaging unit 3 captures images of the reference marks FMa, FMk, FMq, and FMz to obtain the center positions of each. Then, the interval in the X direction and the offset in the Y direction when the X-axis slider 41 of the relative moving part 4 is moved to image the reference marks FMa, FMk, and the Y-axis slider 42 is moved to image the reference marks FMa, FMk. The distance between the Y direction and the offset in the X direction during FMq is used to calculate how much the orthogonality between the X-axis slider 41 and the Y-axis slider 42 deviates. Then, the wafer position calculation unit 5 corrects and calculates the positions of each of the wafer components so as to eliminate the amount of offset due to the degree of orthogonality.

若為此種構成,則以晶片位置算出部5算出之晶片零件各者之位置可減小或防止因相對移動部4之X軸滑塊41與Y軸滑塊42之正交度之偏移所致之位置測定之誤差。 With such a configuration, the position of each of the wafer parts calculated by the wafer position calculation unit 5 can reduce or prevent the offset due to the orthogonality between the X-axis slider 41 and the Y-axis slider 42 of the relative movement unit 4. The resulting position measurement error.

[其他形態] [Other forms]

另,於上述,於相對移動部4之X軸滑塊41與Y軸滑塊42之直線度(亦稱為線直度、直進度)對晶片零件各者之位置測定無影響之前提下,進行了詳細說明。但,機器構成上,有與移動方向正交之方向上略微蜿蜒,分割攝像區域於θ方向傾斜之情況。於是,於分割攝像區域之X方向與Y方向上,包含因於θ方向偏移而產生之誤差,故產生對晶片零件各者之位置測定造成影響之擔憂。 In addition, as mentioned above, under the premise that the straightness (also called line straightness, straightness) of the X-axis slider 41 and the Y-axis slider 42 of the relative moving part 4 has no influence on the position measurement of each of the wafer components, described in detail. However, in terms of machine configuration, the direction perpendicular to the moving direction may meander slightly, and the divided imaging area may be inclined in the θ direction. Then, the X-direction and Y-direction of the divided imaging area include errors due to deviation in the θ direction, which may affect the position measurement of each of the wafer components.

為減輕或消除此種擔憂(即,取得圖像之θ方向之偏移之影響),於應用本發明時,較佳為分割攝像區域中包含至少2行以上之上述晶片零件,且,該晶片零件中之至少1行晶片零件預先作為隣接之上述分割攝像區域之兩者所含之重複攝像晶片零件而設定。且,晶片位置算出部5中,算出後拍攝之上述分割攝像區域所含之重複攝像晶片零件除外之其他晶片零件各者之位置時,由複數個重複攝像晶片零件之位置關係(即,X方向及Y方向之位置),算出θ方向之偏移成分,修正該偏移成分,算出晶片零件各者之位置。 In order to alleviate or eliminate such concerns (that is, the influence of the offset in the θ direction of the obtained image), when applying the present invention, it is preferable that the above-mentioned chip components include at least two or more rows in the divided imaging area, and the chip At least one row of wafer parts among the parts is set in advance as overlapping imaging wafer parts included in both of the adjacent divided imaging areas. And, in the wafer position calculation unit 5, when calculating the position of each of the other wafer parts except the repeated imaging wafer parts included in the above-mentioned divided imaging area captured after the calculation, the positional relationship (that is, the X direction) of the plurality of repeated imaging wafer parts is calculated. and the position in the Y direction), calculate the offset component in the θ direction, correct the offset component, and calculate the position of each of the chip components.

若為此種形態,則即使一面相對移動一面取得之分割攝像區域之圖像於θ方向略微傾斜,亦可消除該傾斜之影響,以期望之精度算出各個晶片零件之位置。 According to this form, even if the images of the divided imaging regions obtained while relatively moving are slightly inclined in the θ direction, the influence of the inclination can be eliminated, and the position of each chip part can be calculated with desired accuracy.

[其他形態] [Other forms]

另,於上述,顯示於1個分割攝像區域排列有縱2×橫3之合計6個晶片零件之例(圖2、3),或於1個分割攝像區域排列有縱3×橫6之合計18個晶片零件之例(圖4),一面例示其中縱1行之晶片零件作為重複攝像晶片,於隣接之分割攝像區域之兩者被拍攝之形態,一面進行詳細說明。 In addition, in the above, an example where a total of 6 wafer parts of 2 in length and 3 in width are arranged in one divided imaging area is shown (Fig. 2 and 3), or a total of 3 in length and 6 in width are arranged in one divided imaging area An example of 18 chip parts (FIG. 4) will be described in detail while illustrating the state in which the chip parts in one vertical row are imaged in two adjacent divided imaging areas as a repetitive imaging chip.

但,可將該縱橫之晶片零件之數量適當增減,應用本發明。例如,若增加縱橫之晶片零件之數量(例如,設定為縱30×橫40),則可增加每單位時間可處理之基板之塊數(所謂WPH)。另一方面,若減少縱橫之晶片數 量,則可縮小攝像視野尺寸(亦稱為提高攝像之倍率),提高像素解析度,謀求測定精度之提高。 However, the present invention can be applied by appropriately increasing or decreasing the number of the vertical and horizontal chip components. For example, if the number of vertical and horizontal wafer parts is increased (for example, set to 30 vertical x 40 horizontal), the number of substrates that can be processed per unit time (so-called WPH) can be increased. On the other hand, if the number of vertical and horizontal chips is reduced The amount can reduce the size of the imaging field of view (also known as increasing the magnification of the imaging), increase the pixel resolution, and improve the measurement accuracy.

即,應用本發明時,1個分割攝像區域中包含至少2個晶片,其中1者作為重複攝像晶片設定即可。 That is, when the present invention is applied, at least two wafers are included in one divided imaging area, and one of them may be set as a double imaging wafer.

[變化例] [variation example]

另,於上述,顯示了對於分開配置於基板上之晶片零件C(1,1)~C(9,2),以分割攝像區域F(1)、F(2)、F(3)、F(4)之順序,於X方向變更分割攝像區域,且測定該分割攝像區域所含之晶片零件各者之位置之具體步驟等。但,於應用本發明時,不僅於X方向設定重複攝像區域,於X方向相對移動,亦可於Y方向設定重複攝像區域,於Y方向相對移動,基於先拍攝之圖像所含之重複攝像晶片之位置關係,算出其他晶片零件各者之位置。或者,亦可如圖6所例示,於XY方向兩者設定重複攝像區域M(1)~M(4),於晶片位置算出部5,如下述算出晶片零件各者之位置。 In addition, in the above, for the chip components C(1, 1)~C(9, 2) separately arranged on the substrate, the imaging areas F(1), F(2), F(3), and F In the procedure of (4), the specific steps of changing the divided imaging area in the X direction and measuring the positions of each of the wafer components included in the divided imaging area, etc. However, when the present invention is applied, not only the repeated imaging area is set in the X direction and relatively moved in the X direction, but also the repeated imaging area can be set in the Y direction and relatively moved in the Y direction, based on the repeated imaging contained in the first captured image The positional relationship of the chip is used to calculate the positions of other chip components. Alternatively, as shown in FIG. 6, overlapping imaging areas M(1)-M(4) may be set in both XY directions, and the wafer position calculation unit 5 may calculate the positions of each of the wafer components as follows.

‧以C(1,1)之位置為基準,算出分割攝像區域F(1)之晶片零件C(1,1)~C(6,2)各者之位置。 ‧Based on the position of C(1,1), calculate the positions of each of the chip components C(1,1)~C(6,2) in the divided imaging area F(1).

‧以C(6,1)等之位置為基準,算出分割攝像區域F(2)之晶片零件C(7,1)~C(11,2)各者之位置。 ‧Based on the positions of C(6,1) etc., calculate the positions of each of the chip components C(7,1)~C(11,2) in the divided imaging area F(2).

‧以C(6,3)等之位置為基準,算出分割攝像區域F(m)之晶片零件C(6,4)~C(11,5)各者之位置。 ‧Based on the positions of C(6,3) etc., calculate the positions of each of the chip components C(6,4)~C(11,5) in the divided imaging area F(m).

‧以C(6,3)等之位置為基準,算出分割攝像區域F(m+1)之晶片零件C(1,4)~C(5,5)各者之位置。 ‧Based on the positions of C(6,3) etc., calculate the positions of each of the chip components C(1,4)~C(5,5) in the divided imaging area F(m+1).

[其他變化例] [Other Variations]

另,於上述,作為算出晶片位置算出部5之各晶片零件之位置之具體例,顯示了以各晶片零件之左下角之位置為基準之例。但,於應用本發明時,亦可以各晶片零件之中央或重心位置、其他角之位置為基準算出。 In addition, in the above, as a specific example of calculating the position of each wafer component in the wafer position calculation unit 5, an example using the position of the lower left corner of each wafer component as a reference was shown. However, when the present invention is applied, it can also be calculated based on the position of the center or center of gravity of each chip part, and the positions of other corners.

又,於上述,例示了同軸落射方式作為照明部31,但亦可為透過照明或斜光照明、環形照明、穹頂照明等。 In addition, in the above, the coaxial epi-beam system was exemplified as the illumination unit 31 , but transmission illumination, oblique illumination, ring illumination, dome illumination, etc. may also be used.

[應用例] [Application example]

另,於上述,著眼於晶片位置測定進行了詳細說明。但,亦可為於具備檢查晶片零件之破裂或缺損、劃痕或污垢之功能之檢查裝置,或具備雷射照射或分配器、噴墨等之加工功能之裝置等中組入有(利用)本發明之構成。 In addition, in the above, the detailed description has focused on the measurement of the wafer position. However, it may also be incorporated (used) in an inspection device having a function of inspecting chip parts for cracks or defects, scratches or dirt, or a device having a processing function such as laser irradiation or dispenser, inkjet, etc. Constitution of the present invention.

3‧‧‧攝像部 3‧‧‧camera department

35‧‧‧攝像相機 35‧‧‧Video camera

C‧‧‧晶片零件(括號內之數字係排列位置) C‧‧‧Chip parts (the number in brackets is the arrangement position)

F‧‧‧分割攝像區域(括號內之數字係攝像之順序) F‧‧‧Split imaging area (numbers in brackets are the order of imaging)

Vs‧‧‧箭頭 Vs‧‧‧arrow

W‧‧‧基板 W‧‧‧substrate

x‧‧‧方向 x‧‧‧direction

y‧‧‧方向 y‧‧‧direction

z‧‧‧方向 z‧‧‧direction

Claims (2)

一種晶片位置測定裝置,其特徵在於:其係測定分開配置於基板上之複數個晶片零件各者之位置者,且具備:基板保持部,其保持上述基板;攝像部,其將設定於上述基板上之特定區域分割成複數個分割攝像區域進行拍攝;晶片位置算出部,其基於上述攝像部所拍攝之圖像,算出上述分割攝像區域內所含之上述晶片零件各者之位置;相對移動部,其使上述基板保持部與上述攝像部相對移動;及控制部,其驅動控制上述相對移動部,且一面變更設定於上述基板上之上述分割攝像區域之場所,一面對上述攝像部輸出攝像觸發;且於上述分割攝像區域包含至少2個以上之上述晶片零件,且,該晶片零件中之至少1個晶片零件係作為隣接之上述分割攝像區域之兩者所含之重複攝像晶片零件而設定;上述晶片位置算出部係:根據與先拍攝之上述分割攝像區域所含之其他晶片零件之位置關係,算出上述重複攝像晶片零件各者之位置;將後拍攝之上述分割攝像區域所含之上述重複攝像晶片零件除外之其他晶片零件各者之位置,根據與該重複攝像晶片零件之位置關係算出;且上述晶片位置測定裝置具備尺度修正部,其係:使上述基板保持部保持複數個基準標記之相互位置為已知之主基 板,基於配置於上述主基板之上述基準標記之相互位置,進行對於由上述晶片位置算出部算出之上述晶片零件各者之位置之修正。 A wafer position measurement device, characterized in that: it measures the position of each of a plurality of wafer parts separately arranged on a substrate, and includes: a substrate holding part, which holds the above substrate; an imaging part, which sets the position on the above substrate The specific area above is divided into a plurality of divided imaging areas for shooting; the wafer position calculation unit calculates the position of each of the above-mentioned wafer components contained in the aforementioned divided imaging area based on the image captured by the aforementioned imaging unit; the relative movement unit , which relatively moves the above-mentioned substrate holding part and the above-mentioned imaging part; Trigger; and at least two or more of the above-mentioned chip parts are included in the above-mentioned divided imaging area, and at least one of the chip parts is set as a duplicate imaging chip part included in two adjacent divided imaging areas The above-mentioned chip position calculation unit is: according to the positional relationship with the other chip parts contained in the above-mentioned divided imaging area photographed first, calculate the position of each of the above-mentioned repeated imaging chip parts; The positions of each of the wafer components other than the repetitive imaging wafer component are calculated based on the positional relationship with the repetitive imaging wafer component; and the above-mentioned wafer position measuring device is provided with a dimension correction unit which is used to make the above-mentioned substrate holding unit hold a plurality of reference marks principal basis The board corrects the positions of each of the wafer components calculated by the wafer position calculation unit based on the mutual positions of the reference marks disposed on the main substrate. 如請求項1之晶片位置測定裝置,其中於上述分割攝像區域中包含至少2行以上之上述晶片零件,且,該晶片零件中之至少1行晶片零件係作為隣接之上述分割攝像區域之兩者所含之重複攝像晶片零件設定。The wafer position measuring device according to claim 1, wherein at least two or more rows of the above-mentioned wafer parts are included in the above-mentioned divided imaging area, and at least one row of wafer parts among the wafer parts is used as both of the adjacent divided imaging areas. Included repeat camera chip part setup.
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