TWI790433B - 曝光裝置及製造物品之方法 - Google Patents

曝光裝置及製造物品之方法 Download PDF

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Publication number
TWI790433B
TWI790433B TW109113435A TW109113435A TWI790433B TW I790433 B TWI790433 B TW I790433B TW 109113435 A TW109113435 A TW 109113435A TW 109113435 A TW109113435 A TW 109113435A TW I790433 B TWI790433 B TW I790433B
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TW
Taiwan
Prior art keywords
pattern
optical system
light
projection optical
measurement pattern
Prior art date
Application number
TW109113435A
Other languages
English (en)
Chinese (zh)
Other versions
TW202043939A (zh
Inventor
橋本明人
赤松昭郎
Original Assignee
日商佳能股份有限公司
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Publication date
Application filed by 日商佳能股份有限公司 filed Critical 日商佳能股份有限公司
Publication of TW202043939A publication Critical patent/TW202043939A/zh
Application granted granted Critical
Publication of TWI790433B publication Critical patent/TWI790433B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW109113435A 2019-05-22 2020-04-22 曝光裝置及製造物品之方法 TWI790433B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-096252 2019-05-22
JP2019096252A JP7320986B2 (ja) 2019-05-22 2019-05-22 露光装置及び物品の製造方法

Publications (2)

Publication Number Publication Date
TW202043939A TW202043939A (zh) 2020-12-01
TWI790433B true TWI790433B (zh) 2023-01-21

Family

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Family Applications (3)

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TW109113435A TWI790433B (zh) 2019-05-22 2020-04-22 曝光裝置及製造物品之方法
TW113108605A TWI879485B (zh) 2019-05-22 2020-04-22 曝光裝置及製造物品之方法
TW111148390A TWI836797B (zh) 2019-05-22 2020-04-22 曝光裝置及製造物品之方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW113108605A TWI879485B (zh) 2019-05-22 2020-04-22 曝光裝置及製造物品之方法
TW111148390A TWI836797B (zh) 2019-05-22 2020-04-22 曝光裝置及製造物品之方法

Country Status (5)

Country Link
US (1) US11181825B2 (enExample)
JP (1) JP7320986B2 (enExample)
KR (1) KR102739326B1 (enExample)
CN (2) CN118244574A (enExample)
TW (3) TWI790433B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7862967B2 (ja) * 2022-03-16 2026-05-20 キヤノン株式会社 計測装置、露光装置、及び物品の製造方法
US12461041B2 (en) * 2022-04-20 2025-11-04 Kla Corporation Measurement of thick films and high aspect ratio structures
JP2024010734A (ja) * 2022-07-13 2024-01-25 キヤノン株式会社 位置検出装置及びリソグラフィ装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009145494A (ja) * 2007-12-12 2009-07-02 Orc Mfg Co Ltd 焦点位置検出方法および描画装置
TW201633370A (zh) * 2014-12-05 2016-09-16 Orc Mfg Co Ltd 曝光裝置

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JP3013463B2 (ja) 1991-02-01 2000-02-28 株式会社ニコン 焦点位置検出装置及び投影露光装置
WO1993006618A1 (en) * 1991-09-20 1993-04-01 Hitachi, Ltd. Method and apparatus for forming pattern
TW490596B (en) * 1999-03-08 2002-06-11 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus
JP4323608B2 (ja) * 1999-03-12 2009-09-02 キヤノン株式会社 露光装置およびデバイス製造方法
US7016025B1 (en) * 1999-06-24 2006-03-21 Asml Holding N.V. Method and apparatus for characterization of optical systems
US6885429B2 (en) * 2002-06-28 2005-04-26 Asml Holding N.V. System and method for automated focus measuring of a lithography tool
JP2008140911A (ja) * 2006-11-30 2008-06-19 Toshiba Corp フォーカスモニタ方法
CN101226299B (zh) * 2007-01-18 2011-07-13 瀚宇彩晶股份有限公司 制作具有光散射效果的彩色滤光层的方法
TWI383273B (zh) * 2007-11-20 2013-01-21 Asml Netherlands Bv 微影投射裝置之焦點測量方法及微影投射裝置之校準方法
CN102034732B (zh) * 2009-09-30 2015-01-21 京瓷株式会社 吸附用构件、使用其的吸附装置及带电粒子线装置
JP2013186425A (ja) * 2012-03-09 2013-09-19 Nikon Corp 焦点位置検出方法、露光方法、デバイス製造方法及び露光装置
JP6003272B2 (ja) * 2012-06-15 2016-10-05 富士通セミコンダクター株式会社 露光方法および露光装置
JP6818501B2 (ja) * 2016-10-19 2021-01-20 キヤノン株式会社 リソグラフィ装置、および物品製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009145494A (ja) * 2007-12-12 2009-07-02 Orc Mfg Co Ltd 焦点位置検出方法および描画装置
TW201633370A (zh) * 2014-12-05 2016-09-16 Orc Mfg Co Ltd 曝光裝置

Also Published As

Publication number Publication date
KR102739326B1 (ko) 2024-12-09
TW202314402A (zh) 2023-04-01
US20200371443A1 (en) 2020-11-26
TW202043939A (zh) 2020-12-01
TWI836797B (zh) 2024-03-21
TWI879485B (zh) 2025-04-01
JP2020190654A (ja) 2020-11-26
US11181825B2 (en) 2021-11-23
JP7320986B2 (ja) 2023-08-04
CN118244574A (zh) 2024-06-25
CN111983897A (zh) 2020-11-24
CN111983897B (zh) 2024-04-23
TW202424663A (zh) 2024-06-16
KR20200135174A (ko) 2020-12-02

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