TWI789191B - 光刻系統 - Google Patents
光刻系統 Download PDFInfo
- Publication number
- TWI789191B TWI789191B TW110149464A TW110149464A TWI789191B TW I789191 B TWI789191 B TW I789191B TW 110149464 A TW110149464 A TW 110149464A TW 110149464 A TW110149464 A TW 110149464A TW I789191 B TWI789191 B TW I789191B
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- Prior art keywords
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- model
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- Prior art date
Links
- 238000001459 lithography Methods 0.000 title claims description 55
- 230000006641 stabilisation Effects 0.000 claims abstract description 82
- 238000011105 stabilization Methods 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000206 photolithography Methods 0.000 claims abstract description 28
- 238000012937 correction Methods 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 12
- 238000005457 optimization Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 4
- 230000001052 transient effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 27
- 238000012545 processing Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 12
- 230000006399 behavior Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000000059 patterning Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- -1 poly(methyl glutarimide) Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000010801 machine learning Methods 0.000 description 3
- 238000011524 similarity measure Methods 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- 230000005526 G1 to G0 transition Effects 0.000 description 2
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- KNCYXPMJDCCGSJ-UHFFFAOYSA-N piperidine-2,6-dione Chemical compound O=C1CCCC(=O)N1 KNCYXPMJDCCGSJ-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7092—Signal processing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Signal Processing (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Vehicle Body Suspensions (AREA)
- Fluid-Damping Devices (AREA)
- Optical Communication System (AREA)
- Electron Beam Exposure (AREA)
- Details Of Measuring And Other Instruments (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/277,805 US10996572B2 (en) | 2019-02-15 | 2019-02-15 | Model based dynamic positional correction for digital lithography tools |
| US16/277,805 | 2019-02-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202242569A TW202242569A (zh) | 2022-11-01 |
| TWI789191B true TWI789191B (zh) | 2023-01-01 |
Family
ID=72040798
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110149464A TWI789191B (zh) | 2019-02-15 | 2020-01-21 | 光刻系統 |
| TW109102168A TWI754209B (zh) | 2019-02-15 | 2020-01-21 | 用於數位光刻工具之校正方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109102168A TWI754209B (zh) | 2019-02-15 | 2020-01-21 | 用於數位光刻工具之校正方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10996572B2 (https=) |
| JP (3) | JP7292397B2 (https=) |
| KR (2) | KR102717090B1 (https=) |
| CN (2) | CN113544594B (https=) |
| TW (2) | TWI789191B (https=) |
| WO (1) | WO2020167408A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102263718B1 (ko) * | 2019-06-10 | 2021-06-11 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US11481922B2 (en) * | 2020-04-07 | 2022-10-25 | Kla Corporation | Online navigational drift correction for metrology measurements |
| CN116540489A (zh) * | 2023-04-23 | 2023-08-04 | 上海华力集成电路制造有限公司 | 针对光刻中光罩热效应的修正方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1677246A (zh) * | 2004-03-29 | 2005-10-05 | Asml荷兰有限公司 | 光刻设备和设备制造方法 |
| US9499906B2 (en) * | 2015-02-13 | 2016-11-22 | Eastman Kodak Company | Coating substrate using bernoulli atomic-layer deposition |
| TW201901286A (zh) * | 2017-05-01 | 2019-01-01 | 美商蘭姆研究公司 | 透過邊緣放置誤差預測之設計佈局圖案近接校正 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL9000503A (nl) * | 1990-03-05 | 1991-10-01 | Asm Lithography Bv | Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat. |
| JP3048508B2 (ja) * | 1994-11-04 | 2000-06-05 | キヤノン株式会社 | 位置決めステージ装置およびこれを用いた露光装置 |
| JP4308460B2 (ja) * | 2001-09-27 | 2009-08-05 | 富士フイルム株式会社 | 画像記録装置 |
| KR100431329B1 (ko) | 2001-10-11 | 2004-05-12 | 삼성전자주식회사 | 반도체 웨이퍼 오버레이 보정방법 |
| JP4307140B2 (ja) * | 2003-04-25 | 2009-08-05 | キヤノン株式会社 | 光学素子位置決め装置、それを用いた露光装置、デバイスの製造方法 |
| JP3978158B2 (ja) * | 2003-07-02 | 2007-09-19 | 株式会社日立ハイテクノロジーズ | 電子線描画装置 |
| US7009359B2 (en) * | 2003-08-08 | 2006-03-07 | Asml Holding N.V. | Foam core chuck for the scanning stage of a lithography system |
| US7250237B2 (en) | 2003-12-23 | 2007-07-31 | Asml Netherlands B.V. | Optimized correction of wafer thermal deformations in a lithographic process |
| US7025280B2 (en) * | 2004-01-30 | 2006-04-11 | Tokyo Electron Limited | Adaptive real time control of a reticle/mask system |
| WO2005083756A1 (ja) * | 2004-03-01 | 2005-09-09 | Nikon Corporation | 事前計測処理方法、露光システム及び基板処理装置 |
| US7453063B2 (en) | 2004-12-08 | 2008-11-18 | Asml Netherlands B.V. | Calibration substrate and method for calibrating a lithographic apparatus |
| JP2006293314A (ja) | 2005-02-08 | 2006-10-26 | Fuji Photo Film Co Ltd | 画像形成装置および画像形成方法 |
| US7663732B2 (en) * | 2005-03-18 | 2010-02-16 | Canon Kabushiki Kaisha | Exposure apparatus, exposure method and device manufacturing method for compensating position measuring system using temperature |
| JP2006295148A (ja) * | 2005-03-18 | 2006-10-26 | Canon Inc | 露光装置 |
| US7184853B2 (en) | 2005-05-18 | 2007-02-27 | Infineon Technologies Richmond, Lp | Lithography method and system with correction of overlay offset errors caused by wafer processing |
| US7617477B2 (en) * | 2005-09-09 | 2009-11-10 | Brion Technologies, Inc. | Method for selecting and optimizing exposure tool using an individual mask error model |
| US7830493B2 (en) | 2005-10-04 | 2010-11-09 | Asml Netherlands B.V. | System and method for compensating for radiation induced thermal distortions in a substrate or projection system |
| US7645546B2 (en) | 2006-02-06 | 2010-01-12 | Macronix International Co., Ltd. | Method for determining an overlay correlation set |
| WO2008001891A1 (en) * | 2006-06-30 | 2008-01-03 | Hitachi High-Technologies Corporation | Inspecting device, and inspecting method |
| CN101144976B (zh) * | 2007-10-30 | 2011-03-23 | 中国科学院电工研究所 | 一种光刻系统掩模邻近效应校正方法 |
| JP2009238922A (ja) | 2008-03-26 | 2009-10-15 | Nikon Corp | 露光装置、露光方法及びデバイスの製造方法 |
| DE102008042356A1 (de) * | 2008-09-25 | 2010-04-08 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit |
| US9164401B2 (en) * | 2008-09-30 | 2015-10-20 | Asml Netherlands B.V. | Projection system and lithographic apparatus |
| US9052604B2 (en) | 2008-11-06 | 2015-06-09 | Micron Technology, Inc. | Photolithography systems and associated alignment correction methods |
| US20100259761A1 (en) * | 2009-04-08 | 2010-10-14 | Nikon Corporation | Robust Long Wire Resistance Thermometer |
| KR101395733B1 (ko) | 2009-06-17 | 2014-05-15 | 에이에스엠엘 네델란즈 비.브이. | 오버레이 측정 방법, 리소그래피 장치, 검사 장치, 처리 장치, 및 리소그래피 처리 셀 |
| CN102445149B (zh) * | 2010-10-14 | 2014-02-19 | 上海微电子装备有限公司 | 一种工件台位置测量装置与测量方法 |
| US9940427B2 (en) * | 2012-02-09 | 2018-04-10 | Asml Netherlands B.V. | Lens heating aware source mask optimization for advanced lithography |
| JP5879234B2 (ja) * | 2012-09-03 | 2016-03-08 | 株式会社ニューフレアテクノロジー | マスク描画装置、電子ビームの補正方法 |
| JP6035105B2 (ja) * | 2012-10-05 | 2016-11-30 | 株式会社Screenホールディングス | 画像記録装置および画像記録方法 |
| US9430593B2 (en) | 2012-10-11 | 2016-08-30 | Kla-Tencor Corporation | System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking |
| KR102166879B1 (ko) * | 2014-03-10 | 2020-10-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 다중 하전-입자 빔 리소그래피를 위한 픽셀 블렌딩 |
| KR102521159B1 (ko) | 2014-11-25 | 2023-04-13 | 피디에프 솔루션즈, 인코포레이티드 | 반도체 제조 공정을 위한 개선된 공정 제어 기술 |
| KR102087310B1 (ko) | 2015-10-19 | 2020-03-11 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 프로세스 오차를 정정하기 위한 방법 및 장치 |
| DE102016205987B4 (de) * | 2016-04-11 | 2018-01-25 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage mit mindestens einem Manipulator und Verfahren zum Steuern einer Projektionsbelichtungsanlage |
| US10401704B2 (en) | 2016-11-11 | 2019-09-03 | Asml Netherlands B.V. | Compensating for a physical effect in an optical system |
| US10444643B2 (en) | 2017-03-24 | 2019-10-15 | Nikon Research Corporation Of America | Lithographic thermal distortion compensation with the use of machine learning |
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2019
- 2019-02-15 US US16/277,805 patent/US10996572B2/en active Active
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2020
- 2020-01-16 KR KR1020217029491A patent/KR102717090B1/ko active Active
- 2020-01-16 KR KR1020247033611A patent/KR20240151279A/ko active Pending
- 2020-01-16 CN CN202080019314.XA patent/CN113544594B/zh active Active
- 2020-01-16 CN CN202410249817.6A patent/CN118092083A/zh active Pending
- 2020-01-16 WO PCT/US2020/013861 patent/WO2020167408A1/en not_active Ceased
- 2020-01-16 JP JP2021547456A patent/JP7292397B2/ja active Active
- 2020-01-21 TW TW110149464A patent/TWI789191B/zh active
- 2020-01-21 TW TW109102168A patent/TWI754209B/zh active
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2021
- 2021-03-30 US US17/217,799 patent/US12379671B2/en active Active
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2023
- 2023-06-06 JP JP2023092916A patent/JP2023126759A/ja active Pending
-
2025
- 2025-07-10 JP JP2025116329A patent/JP2025165943A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1677246A (zh) * | 2004-03-29 | 2005-10-05 | Asml荷兰有限公司 | 光刻设备和设备制造方法 |
| US9499906B2 (en) * | 2015-02-13 | 2016-11-22 | Eastman Kodak Company | Coating substrate using bernoulli atomic-layer deposition |
| TW201901286A (zh) * | 2017-05-01 | 2019-01-01 | 美商蘭姆研究公司 | 透過邊緣放置誤差預測之設計佈局圖案近接校正 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20210216019A1 (en) | 2021-07-15 |
| JP2023126759A (ja) | 2023-09-12 |
| US12379671B2 (en) | 2025-08-05 |
| US20200264514A1 (en) | 2020-08-20 |
| TW202242569A (zh) | 2022-11-01 |
| JP7292397B2 (ja) | 2023-06-16 |
| TWI754209B (zh) | 2022-02-01 |
| US10996572B2 (en) | 2021-05-04 |
| KR20210116707A (ko) | 2021-09-27 |
| TW202043947A (zh) | 2020-12-01 |
| JP2025165943A (ja) | 2025-11-05 |
| CN118092083A (zh) | 2024-05-28 |
| KR102717090B1 (ko) | 2024-10-11 |
| JP2022521067A (ja) | 2022-04-05 |
| KR20240151279A (ko) | 2024-10-17 |
| CN113544594B (zh) | 2024-03-19 |
| WO2020167408A1 (en) | 2020-08-20 |
| CN113544594A (zh) | 2021-10-22 |
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