TWI789191B - 光刻系統 - Google Patents

光刻系統 Download PDF

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Publication number
TWI789191B
TWI789191B TW110149464A TW110149464A TWI789191B TW I789191 B TWI789191 B TW I789191B TW 110149464 A TW110149464 A TW 110149464A TW 110149464 A TW110149464 A TW 110149464A TW I789191 B TWI789191 B TW I789191B
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TW
Taiwan
Prior art keywords
data
during
model
lithography system
temperature
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TW110149464A
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English (en)
Chinese (zh)
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TW202242569A (zh
Inventor
塔梅爾 克斯古
穆哈麥特 波亞茲
鐘欽
帕查 蒙可萬榮
Original Assignee
美商應用材料股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/7065Defects, e.g. optical inspection of patterned layer for defects
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019Calibration
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092Signal processing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7096Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Signal Processing (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Vehicle Body Suspensions (AREA)
  • Fluid-Damping Devices (AREA)
  • Optical Communication System (AREA)
  • Electron Beam Exposure (AREA)
  • Details Of Measuring And Other Instruments (AREA)
TW110149464A 2019-02-15 2020-01-21 光刻系統 TWI789191B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/277,805 US10996572B2 (en) 2019-02-15 2019-02-15 Model based dynamic positional correction for digital lithography tools
US16/277,805 2019-02-15

Publications (2)

Publication Number Publication Date
TW202242569A TW202242569A (zh) 2022-11-01
TWI789191B true TWI789191B (zh) 2023-01-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW110149464A TWI789191B (zh) 2019-02-15 2020-01-21 光刻系統
TW109102168A TWI754209B (zh) 2019-02-15 2020-01-21 用於數位光刻工具之校正方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW109102168A TWI754209B (zh) 2019-02-15 2020-01-21 用於數位光刻工具之校正方法

Country Status (6)

Country Link
US (2) US10996572B2 (https=)
JP (3) JP7292397B2 (https=)
KR (2) KR102717090B1 (https=)
CN (2) CN113544594B (https=)
TW (2) TWI789191B (https=)
WO (1) WO2020167408A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102263718B1 (ko) * 2019-06-10 2021-06-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11481922B2 (en) * 2020-04-07 2022-10-25 Kla Corporation Online navigational drift correction for metrology measurements
CN116540489A (zh) * 2023-04-23 2023-08-04 上海华力集成电路制造有限公司 针对光刻中光罩热效应的修正方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1677246A (zh) * 2004-03-29 2005-10-05 Asml荷兰有限公司 光刻设备和设备制造方法
US9499906B2 (en) * 2015-02-13 2016-11-22 Eastman Kodak Company Coating substrate using bernoulli atomic-layer deposition
TW201901286A (zh) * 2017-05-01 2019-01-01 美商蘭姆研究公司 透過邊緣放置誤差預測之設計佈局圖案近接校正

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9000503A (nl) * 1990-03-05 1991-10-01 Asm Lithography Bv Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat.
JP3048508B2 (ja) * 1994-11-04 2000-06-05 キヤノン株式会社 位置決めステージ装置およびこれを用いた露光装置
JP4308460B2 (ja) * 2001-09-27 2009-08-05 富士フイルム株式会社 画像記録装置
KR100431329B1 (ko) 2001-10-11 2004-05-12 삼성전자주식회사 반도체 웨이퍼 오버레이 보정방법
JP4307140B2 (ja) * 2003-04-25 2009-08-05 キヤノン株式会社 光学素子位置決め装置、それを用いた露光装置、デバイスの製造方法
JP3978158B2 (ja) * 2003-07-02 2007-09-19 株式会社日立ハイテクノロジーズ 電子線描画装置
US7009359B2 (en) * 2003-08-08 2006-03-07 Asml Holding N.V. Foam core chuck for the scanning stage of a lithography system
US7250237B2 (en) 2003-12-23 2007-07-31 Asml Netherlands B.V. Optimized correction of wafer thermal deformations in a lithographic process
US7025280B2 (en) * 2004-01-30 2006-04-11 Tokyo Electron Limited Adaptive real time control of a reticle/mask system
WO2005083756A1 (ja) * 2004-03-01 2005-09-09 Nikon Corporation 事前計測処理方法、露光システム及び基板処理装置
US7453063B2 (en) 2004-12-08 2008-11-18 Asml Netherlands B.V. Calibration substrate and method for calibrating a lithographic apparatus
JP2006293314A (ja) 2005-02-08 2006-10-26 Fuji Photo Film Co Ltd 画像形成装置および画像形成方法
US7663732B2 (en) * 2005-03-18 2010-02-16 Canon Kabushiki Kaisha Exposure apparatus, exposure method and device manufacturing method for compensating position measuring system using temperature
JP2006295148A (ja) * 2005-03-18 2006-10-26 Canon Inc 露光装置
US7184853B2 (en) 2005-05-18 2007-02-27 Infineon Technologies Richmond, Lp Lithography method and system with correction of overlay offset errors caused by wafer processing
US7617477B2 (en) * 2005-09-09 2009-11-10 Brion Technologies, Inc. Method for selecting and optimizing exposure tool using an individual mask error model
US7830493B2 (en) 2005-10-04 2010-11-09 Asml Netherlands B.V. System and method for compensating for radiation induced thermal distortions in a substrate or projection system
US7645546B2 (en) 2006-02-06 2010-01-12 Macronix International Co., Ltd. Method for determining an overlay correlation set
WO2008001891A1 (en) * 2006-06-30 2008-01-03 Hitachi High-Technologies Corporation Inspecting device, and inspecting method
CN101144976B (zh) * 2007-10-30 2011-03-23 中国科学院电工研究所 一种光刻系统掩模邻近效应校正方法
JP2009238922A (ja) 2008-03-26 2009-10-15 Nikon Corp 露光装置、露光方法及びデバイスの製造方法
DE102008042356A1 (de) * 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
US9164401B2 (en) * 2008-09-30 2015-10-20 Asml Netherlands B.V. Projection system and lithographic apparatus
US9052604B2 (en) 2008-11-06 2015-06-09 Micron Technology, Inc. Photolithography systems and associated alignment correction methods
US20100259761A1 (en) * 2009-04-08 2010-10-14 Nikon Corporation Robust Long Wire Resistance Thermometer
KR101395733B1 (ko) 2009-06-17 2014-05-15 에이에스엠엘 네델란즈 비.브이. 오버레이 측정 방법, 리소그래피 장치, 검사 장치, 처리 장치, 및 리소그래피 처리 셀
CN102445149B (zh) * 2010-10-14 2014-02-19 上海微电子装备有限公司 一种工件台位置测量装置与测量方法
US9940427B2 (en) * 2012-02-09 2018-04-10 Asml Netherlands B.V. Lens heating aware source mask optimization for advanced lithography
JP5879234B2 (ja) * 2012-09-03 2016-03-08 株式会社ニューフレアテクノロジー マスク描画装置、電子ビームの補正方法
JP6035105B2 (ja) * 2012-10-05 2016-11-30 株式会社Screenホールディングス 画像記録装置および画像記録方法
US9430593B2 (en) 2012-10-11 2016-08-30 Kla-Tencor Corporation System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
KR102166879B1 (ko) * 2014-03-10 2020-10-16 어플라이드 머티어리얼스, 인코포레이티드 다중 하전-입자 빔 리소그래피를 위한 픽셀 블렌딩
KR102521159B1 (ko) 2014-11-25 2023-04-13 피디에프 솔루션즈, 인코포레이티드 반도체 제조 공정을 위한 개선된 공정 제어 기술
KR102087310B1 (ko) 2015-10-19 2020-03-11 에이에스엠엘 네델란즈 비.브이. 패터닝 프로세스 오차를 정정하기 위한 방법 및 장치
DE102016205987B4 (de) * 2016-04-11 2018-01-25 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator und Verfahren zum Steuern einer Projektionsbelichtungsanlage
US10401704B2 (en) 2016-11-11 2019-09-03 Asml Netherlands B.V. Compensating for a physical effect in an optical system
US10444643B2 (en) 2017-03-24 2019-10-15 Nikon Research Corporation Of America Lithographic thermal distortion compensation with the use of machine learning

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1677246A (zh) * 2004-03-29 2005-10-05 Asml荷兰有限公司 光刻设备和设备制造方法
US9499906B2 (en) * 2015-02-13 2016-11-22 Eastman Kodak Company Coating substrate using bernoulli atomic-layer deposition
TW201901286A (zh) * 2017-05-01 2019-01-01 美商蘭姆研究公司 透過邊緣放置誤差預測之設計佈局圖案近接校正

Also Published As

Publication number Publication date
US20210216019A1 (en) 2021-07-15
JP2023126759A (ja) 2023-09-12
US12379671B2 (en) 2025-08-05
US20200264514A1 (en) 2020-08-20
TW202242569A (zh) 2022-11-01
JP7292397B2 (ja) 2023-06-16
TWI754209B (zh) 2022-02-01
US10996572B2 (en) 2021-05-04
KR20210116707A (ko) 2021-09-27
TW202043947A (zh) 2020-12-01
JP2025165943A (ja) 2025-11-05
CN118092083A (zh) 2024-05-28
KR102717090B1 (ko) 2024-10-11
JP2022521067A (ja) 2022-04-05
KR20240151279A (ko) 2024-10-17
CN113544594B (zh) 2024-03-19
WO2020167408A1 (en) 2020-08-20
CN113544594A (zh) 2021-10-22

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