TWI788697B - 半導體裝置之製造方法及製造裝置 - Google Patents

半導體裝置之製造方法及製造裝置 Download PDF

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Publication number
TWI788697B
TWI788697B TW109129504A TW109129504A TWI788697B TW I788697 B TWI788697 B TW I788697B TW 109129504 A TW109129504 A TW 109129504A TW 109129504 A TW109129504 A TW 109129504A TW I788697 B TWI788697 B TW I788697B
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TW
Taiwan
Prior art keywords
radiation control
radiation
control body
wavelength
reaction container
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Application number
TW109129504A
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English (en)
Chinese (zh)
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TW202115843A (zh
Inventor
村田等
国井泰夫
上野正昭
Original Assignee
日商國際電氣股份有限公司
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Publication of TW202115843A publication Critical patent/TW202115843A/zh
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Publication of TWI788697B publication Critical patent/TWI788697B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Noodles (AREA)
TW109129504A 2019-08-30 2020-08-28 半導體裝置之製造方法及製造裝置 TWI788697B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-158466 2019-08-30
JP2019158466 2019-08-30
WOPCT/JP2020/029324 2020-07-30
PCT/JP2020/029324 WO2021039270A1 (ja) 2019-08-30 2020-07-30 半導体装置の製造方法および製造装置

Publications (2)

Publication Number Publication Date
TW202115843A TW202115843A (zh) 2021-04-16
TWI788697B true TWI788697B (zh) 2023-01-01

Family

ID=74685868

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109129504A TWI788697B (zh) 2019-08-30 2020-08-28 半導體裝置之製造方法及製造裝置

Country Status (5)

Country Link
US (1) US20220122858A1 (https=)
JP (1) JPWO2021039270A1 (https=)
KR (1) KR20220015447A (https=)
TW (1) TWI788697B (https=)
WO (1) WO2021039270A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI856623B (zh) * 2023-04-25 2024-09-21 國立屏東科技大學 紅外線回焊裝置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778830A (ja) * 1993-09-07 1995-03-20 Hitachi Ltd 半導体製造装置
US20060021582A1 (en) * 2002-09-24 2006-02-02 Takanori Saito Heat treatment apparatus
TW200822218A (en) * 2006-07-07 2008-05-16 Tokyo Electron Ltd Vertical heat processing apparatus and method for using the same
US20120260857A1 (en) * 2011-04-18 2012-10-18 Tokyo Electron Limited Heat treatment apparatus
TW201303969A (zh) * 2011-03-07 2013-01-16 東京威力科創股份有限公司 熱處理裝置
TW201624539A (zh) * 2014-07-24 2016-07-01 東京威力科創股份有限公司 熱處理裝置及熱處理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW291589B (https=) * 1995-03-30 1996-11-21 Ftl Co Ltd
JPH0917739A (ja) * 1995-06-29 1997-01-17 F T L:Kk 半導体装置の製造方法
JP2002124483A (ja) * 2000-10-18 2002-04-26 Matsushita Electric Ind Co Ltd 熱処理装置およびそれを用いた熱処理方法と成膜方法
JP2005093911A (ja) * 2003-09-19 2005-04-07 Hitachi Kokusai Electric Inc 基板処理装置
CN108780743B (zh) * 2016-03-22 2023-05-02 株式会社国际电气 基板处理装置、半导体装置的制造方法以及记录介质
WO2018105113A1 (ja) 2016-12-09 2018-06-14 株式会社日立国際電気 基板処理装置、クーリングユニット及び断熱構造体
US10571337B2 (en) * 2017-05-26 2020-02-25 Applied Materials, Inc. Thermal cooling member with low temperature control

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778830A (ja) * 1993-09-07 1995-03-20 Hitachi Ltd 半導体製造装置
US20060021582A1 (en) * 2002-09-24 2006-02-02 Takanori Saito Heat treatment apparatus
TW200822218A (en) * 2006-07-07 2008-05-16 Tokyo Electron Ltd Vertical heat processing apparatus and method for using the same
TW201303969A (zh) * 2011-03-07 2013-01-16 東京威力科創股份有限公司 熱處理裝置
US20120260857A1 (en) * 2011-04-18 2012-10-18 Tokyo Electron Limited Heat treatment apparatus
TW201624539A (zh) * 2014-07-24 2016-07-01 東京威力科創股份有限公司 熱處理裝置及熱處理方法

Also Published As

Publication number Publication date
JPWO2021039270A1 (https=) 2021-03-04
US20220122858A1 (en) 2022-04-21
TW202115843A (zh) 2021-04-16
WO2021039270A1 (ja) 2021-03-04
KR20220015447A (ko) 2022-02-08

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