JPWO2021039270A1 - - Google Patents
Info
- Publication number
- JPWO2021039270A1 JPWO2021039270A1 JP2021542664A JP2021542664A JPWO2021039270A1 JP WO2021039270 A1 JPWO2021039270 A1 JP WO2021039270A1 JP 2021542664 A JP2021542664 A JP 2021542664A JP 2021542664 A JP2021542664 A JP 2021542664A JP WO2021039270 A1 JPWO2021039270 A1 JP WO2021039270A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Noodles (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019158466 | 2019-08-30 | ||
PCT/JP2020/029324 WO2021039270A1 (ja) | 2019-08-30 | 2020-07-30 | 半導体装置の製造方法および製造装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2021039270A1 true JPWO2021039270A1 (ja) | 2021-03-04 |
Family
ID=74685868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021542664A Pending JPWO2021039270A1 (ja) | 2019-08-30 | 2020-07-30 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220122858A1 (ja) |
JP (1) | JPWO2021039270A1 (ja) |
KR (1) | KR20220015447A (ja) |
TW (1) | TWI788697B (ja) |
WO (1) | WO2021039270A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0778830A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
JPH0917739A (ja) * | 1995-06-29 | 1997-01-17 | F T L:Kk | 半導体装置の製造方法 |
JP2002124483A (ja) * | 2000-10-18 | 2002-04-26 | Matsushita Electric Ind Co Ltd | 熱処理装置およびそれを用いた熱処理方法と成膜方法 |
JP2005093911A (ja) * | 2003-09-19 | 2005-04-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
WO2017163314A1 (ja) * | 2016-03-22 | 2017-09-28 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW291589B (ja) * | 1995-03-30 | 1996-11-21 | Ftl Co Ltd | |
JP4523225B2 (ja) * | 2002-09-24 | 2010-08-11 | 東京エレクトロン株式会社 | 熱処理装置 |
JP4994724B2 (ja) * | 2006-07-07 | 2012-08-08 | 株式会社東芝 | 成膜装置及び成膜方法 |
JP5645718B2 (ja) * | 2011-03-07 | 2014-12-24 | 東京エレクトロン株式会社 | 熱処理装置 |
JP5702657B2 (ja) * | 2011-04-18 | 2015-04-15 | 東京エレクトロン株式会社 | 熱処理装置 |
JP6385748B2 (ja) * | 2014-07-24 | 2018-09-05 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
JP6752291B2 (ja) | 2016-12-09 | 2020-09-09 | 株式会社Kokusai Electric | 基板処理装置、クーリングユニット及び断熱構造体並びに半導体装置の製造方法 |
US10571337B2 (en) * | 2017-05-26 | 2020-02-25 | Applied Materials, Inc. | Thermal cooling member with low temperature control |
-
2020
- 2020-07-30 JP JP2021542664A patent/JPWO2021039270A1/ja active Pending
- 2020-07-30 WO PCT/JP2020/029324 patent/WO2021039270A1/ja active Application Filing
- 2020-07-30 KR KR1020217042802A patent/KR20220015447A/ko not_active Application Discontinuation
- 2020-08-28 TW TW109129504A patent/TWI788697B/zh active
-
2021
- 2021-12-28 US US17/563,469 patent/US20220122858A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0778830A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
JPH0917739A (ja) * | 1995-06-29 | 1997-01-17 | F T L:Kk | 半導体装置の製造方法 |
JP2002124483A (ja) * | 2000-10-18 | 2002-04-26 | Matsushita Electric Ind Co Ltd | 熱処理装置およびそれを用いた熱処理方法と成膜方法 |
JP2005093911A (ja) * | 2003-09-19 | 2005-04-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
WO2017163314A1 (ja) * | 2016-03-22 | 2017-09-28 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
Also Published As
Publication number | Publication date |
---|---|
US20220122858A1 (en) | 2022-04-21 |
TWI788697B (zh) | 2023-01-01 |
KR20220015447A (ko) | 2022-02-08 |
WO2021039270A1 (ja) | 2021-03-04 |
TW202115843A (zh) | 2021-04-16 |
Similar Documents
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