JPWO2021039270A1 - - Google Patents
Info
- Publication number
- JPWO2021039270A1 JPWO2021039270A1 JP2021542664A JP2021542664A JPWO2021039270A1 JP WO2021039270 A1 JPWO2021039270 A1 JP WO2021039270A1 JP 2021542664 A JP2021542664 A JP 2021542664A JP 2021542664 A JP2021542664 A JP 2021542664A JP WO2021039270 A1 JPWO2021039270 A1 JP WO2021039270A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
- H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Noodles (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019158466 | 2019-08-30 | ||
| PCT/JP2020/029324 WO2021039270A1 (ja) | 2019-08-30 | 2020-07-30 | 半導体装置の製造方法および製造装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021039270A1 true JPWO2021039270A1 (https=) | 2021-03-04 |
Family
ID=74685868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021542664A Pending JPWO2021039270A1 (https=) | 2019-08-30 | 2020-07-30 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20220122858A1 (https=) |
| JP (1) | JPWO2021039270A1 (https=) |
| KR (1) | KR20220015447A (https=) |
| TW (1) | TWI788697B (https=) |
| WO (1) | WO2021039270A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI856623B (zh) * | 2023-04-25 | 2024-09-21 | 國立屏東科技大學 | 紅外線回焊裝置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778830A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
| JPH0917739A (ja) * | 1995-06-29 | 1997-01-17 | F T L:Kk | 半導体装置の製造方法 |
| JP2002124483A (ja) * | 2000-10-18 | 2002-04-26 | Matsushita Electric Ind Co Ltd | 熱処理装置およびそれを用いた熱処理方法と成膜方法 |
| JP2005093911A (ja) * | 2003-09-19 | 2005-04-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| WO2017163314A1 (ja) * | 2016-03-22 | 2017-09-28 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW291589B (https=) * | 1995-03-30 | 1996-11-21 | Ftl Co Ltd | |
| JP4523225B2 (ja) * | 2002-09-24 | 2010-08-11 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP4994724B2 (ja) * | 2006-07-07 | 2012-08-08 | 株式会社東芝 | 成膜装置及び成膜方法 |
| JP5645718B2 (ja) * | 2011-03-07 | 2014-12-24 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP5702657B2 (ja) * | 2011-04-18 | 2015-04-15 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP6385748B2 (ja) * | 2014-07-24 | 2018-09-05 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
| WO2018105113A1 (ja) | 2016-12-09 | 2018-06-14 | 株式会社日立国際電気 | 基板処理装置、クーリングユニット及び断熱構造体 |
| US10571337B2 (en) * | 2017-05-26 | 2020-02-25 | Applied Materials, Inc. | Thermal cooling member with low temperature control |
-
2020
- 2020-07-30 WO PCT/JP2020/029324 patent/WO2021039270A1/ja not_active Ceased
- 2020-07-30 JP JP2021542664A patent/JPWO2021039270A1/ja active Pending
- 2020-07-30 KR KR1020217042802A patent/KR20220015447A/ko not_active Ceased
- 2020-08-28 TW TW109129504A patent/TWI788697B/zh active
-
2021
- 2021-12-28 US US17/563,469 patent/US20220122858A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778830A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
| JPH0917739A (ja) * | 1995-06-29 | 1997-01-17 | F T L:Kk | 半導体装置の製造方法 |
| JP2002124483A (ja) * | 2000-10-18 | 2002-04-26 | Matsushita Electric Ind Co Ltd | 熱処理装置およびそれを用いた熱処理方法と成膜方法 |
| JP2005093911A (ja) * | 2003-09-19 | 2005-04-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| WO2017163314A1 (ja) * | 2016-03-22 | 2017-09-28 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220122858A1 (en) | 2022-04-21 |
| TW202115843A (zh) | 2021-04-16 |
| TWI788697B (zh) | 2023-01-01 |
| WO2021039270A1 (ja) | 2021-03-04 |
| KR20220015447A (ko) | 2022-02-08 |
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