TWI782477B - Insulated metal substrate structure - Google Patents

Insulated metal substrate structure Download PDF

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TWI782477B
TWI782477B TW110112867A TW110112867A TWI782477B TW I782477 B TWI782477 B TW I782477B TW 110112867 A TW110112867 A TW 110112867A TW 110112867 A TW110112867 A TW 110112867A TW I782477 B TWI782477 B TW I782477B
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layer
electrical insulation
heat dissipation
metal substrate
substrate structure
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TW202241220A (en
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戴世璽
葉子暘
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艾姆勒科技股份有限公司
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Abstract

An insulated metal substrate structure includes an electrically-insulating layer, a plurality of metal layers, a plurality of electrically-insulating and thermally-conductive layers, and a heat-dissipation layer. The electrically -insulating and thermally-conductive layers are formed on the heat-dissipation layer. The electrically-insulating layer surrounds the metal layers, so that the metal layers are separated into different regions to form a predetermined circuit pattern, and the electrically-insulating layer is formed with at least one recessed corner for positioning the electrically-insulating and thermally-conductive layer filled between the metal layer and the heat-dissipation layer.

Description

絕緣金屬基板結構Insulated Metal Substrate Construction

本發明涉及了基板結構,具體來說是涉及了一種絕緣金屬基板結構。The invention relates to a substrate structure, in particular to an insulating metal substrate structure.

目前現有的絕緣金屬基板結構,使用蝕刻製程來形成預定線路圖形,使得製程流程複雜且成本提高。有鑑於此,本發明人本於多年從事相關產品之開發與設計,有感上述缺失之可改善,乃特潛心研究並配合學理之運用,終於提出一種設計合理且有效改善上述缺失之本發明。Currently, the existing insulating metal substrate structure uses an etching process to form a predetermined circuit pattern, which makes the process process complicated and the cost increased. In view of this, the inventor has been engaged in the development and design of related products for many years, and felt that the above-mentioned defects can be improved, so he devoted himself to research and combined with the application of theories, and finally proposed an invention with a reasonable design and effective improvement of the above-mentioned defects.

本發明所要解決的技術問題在於,針對現有技術的不足提供一種絕緣金屬基板結構。The technical problem to be solved by the present invention is to provide an insulating metal substrate structure in view of the deficiencies of the prior art.

為了解決上述的技術問題,本發明提供一種絕緣金屬基板結構,包括:電絕緣層、多個金屬層、多個電絕緣導熱層、以及散熱層,多個所述電絕緣導熱層形成在所述散熱層之上,所述電絕緣層圍繞多個所述金屬層,使多個所述金屬層分隔不同區域而形成預定線路圖形,且所述電絕緣層形成至少有一用以定位填入所述金屬層與所述散熱層之間的所述電絕緣導熱層的凹角結構。In order to solve the above technical problems, the present invention provides an insulated metal substrate structure, including: an electrical insulation layer, a plurality of metal layers, a plurality of electrical insulation and heat conduction layers, and a heat dissipation layer, and a plurality of the electrical insulation and heat conduction layers are formed on the On the heat dissipation layer, the electrical insulating layer surrounds a plurality of the metal layers, so that the plurality of metal layers are separated from different areas to form a predetermined circuit pattern, and the electrical insulating layer forms at least one for positioning and filling the The concave corner structure of the electrical insulation and heat conduction layer between the metal layer and the heat dissipation layer.

在一優選實施例中,所述電絕緣層是以具高接合性的高分子材料所製成。In a preferred embodiment, the electrical insulating layer is made of polymer material with high bonding properties.

在一優選實施例中,所述電絕緣導熱層是以具高接合性的高分子材料所製成,並且所述電絕緣導熱層包含有陶瓷填料。In a preferred embodiment, the electrical insulation and heat conduction layer is made of polymer material with high bondability, and the electrical insulation heat conduction layer contains ceramic fillers.

在一優選實施例中,所述金屬層的厚度被配置是小於所述電絕緣層的厚度。In a preferred embodiment, the thickness of the metal layer is configured to be smaller than the thickness of the electrically insulating layer.

在一優選實施例中,所述金屬層為厚度介於1mm至5mm的厚銅塊。In a preferred embodiment, the metal layer is a thick copper block with a thickness ranging from 1 mm to 5 mm.

在一優選實施例中,所述散熱層為一具散熱作用的金屬基板。In a preferred embodiment, the heat dissipation layer is a metal substrate with heat dissipation function.

在一優選實施例中,所述散熱層為一具散熱作用及絕緣性的陶瓷基板。In a preferred embodiment, the heat dissipation layer is a ceramic substrate with heat dissipation and insulation.

在一優選實施例中,所述電絕緣層底部不接觸所述散熱層。In a preferred embodiment, the bottom of the electrical insulation layer does not contact the heat dissipation layer.

在一優選實施例中,所述電絕緣層底部直接接觸所述散熱層。In a preferred embodiment, the bottom of the electrical insulation layer directly contacts the heat dissipation layer.

本發明的有益效果至少在於,本發明的絕緣金屬基板結構,其能通過「所述電絕緣層圍繞多個所述金屬層,使多個所述金屬層分隔不同區域而形成預定線路圖形,且所述電絕緣層形成至少有一用以定位填入所述金屬層與所述散熱層之間的所述電絕緣導熱層的凹角結構」的技術方案,使得多個金屬層能夠快速被電絕緣層分隔為不同區域而形成預定線路圖形,降低製程流程及成本,並且能夠有效定位填入金屬層與散熱層之間的電絕緣導熱層。The beneficial effect of the present invention lies at least in that the insulated metal substrate structure of the present invention can form a predetermined circuit pattern by "the electrical insulating layer surrounds a plurality of the metal layers, so that the plurality of metal layers are separated from different regions, and The electrical insulation layer forms at least one technical solution for positioning the electrical insulation and heat conduction layer filled between the metal layer and the heat dissipation layer, so that multiple metal layers can be quickly replaced by the electrical insulation layer. Separated into different regions to form a predetermined circuit pattern, which reduces the manufacturing process and cost, and can effectively position the electrically insulating and heat-conducting layer filled between the metal layer and the heat dissipation layer.

為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings related to the present invention. However, the provided drawings are only for reference and description, and are not intended to limit the present invention.

以下是通過特定的具體實施例來說明本發明所公開有關的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。The following are specific examples to illustrate the implementation methods disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple illustration, and are not drawn according to the actual size, which is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention.

應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”等術語來描述各種元件,但這些元件不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。It should be understood that although terms such as "first" and "second" may be used herein to describe various elements, these elements should not be limited by these terms. These terms are mainly used to distinguish one element from another. In addition, the term "or" used herein may include any one or a combination of more of the associated listed items depending on the actual situation.

請參考圖1、2,本發明第一實施例提供一種絕緣金屬基板結構。如圖所示,根據本發明第一實施例所提供的絕緣金屬基板結構,其基本上包括有電絕緣層10、多個金屬層20、多個電絕緣導熱層30、以及散熱層40。Referring to FIGS. 1 and 2 , the first embodiment of the present invention provides an insulated metal substrate structure. As shown in the figure, the insulated metal substrate structure according to the first embodiment of the present invention basically includes an electrical insulation layer 10 , a plurality of metal layers 20 , a plurality of electrical insulation and heat conduction layers 30 , and a heat dissipation layer 40 .

在本實施例中,散熱層40可以是鋁製散熱器(heat sink),亦或是具有散熱鰭片的散熱器,也可以是具散熱作用的金屬基板,或是具散熱作用及絕緣性的陶瓷基板,然並不侷限於此。In this embodiment, the heat dissipation layer 40 can be an aluminum heat sink, or a heat sink with heat dissipation fins, or a metal substrate with heat dissipation, or a heat sink with heat dissipation and insulation. The ceramic substrate, however, is not limited thereto.

在本實施例中,電絕緣導熱層30形成在散熱層40之上,電絕緣導熱層30可以是以具高接合性的高分子材料所製成,例如環氧樹脂,以增加絕緣性與接合性。並且,電絕緣導熱層30還可以包含有陶瓷填料,以提高導熱性。In this embodiment, the electrically insulating and heat-conducting layer 30 is formed on the heat-dissipating layer 40. The electrically insulating and heat-conducting layer 30 may be made of a polymer material with high bonding properties, such as epoxy resin, to increase insulation and bonding. sex. Moreover, the electrically insulating and heat-conducting layer 30 may also contain ceramic fillers to improve thermal conductivity.

在本實施例中,金屬層20的數量示意為兩個,但金屬層20的數量並不限制,也可以為兩個以上。並且,本實施例的電絕緣層10圍繞多個金屬層20,使多個金屬層20分隔不同區域,藉此可以快速形成預定線路圖形(Pattern),並且電絕緣層10形成至少有一用以定位填入金屬層20與散熱層40之間的電絕緣導熱層30的凹角結構101,藉此可以有效定位填入金屬層20與散熱層40之間的電絕緣導熱層30。In this embodiment, the number of metal layers 20 is shown as two, but the number of metal layers 20 is not limited, and may be more than two. Moreover, the electrical insulating layer 10 of the present embodiment surrounds a plurality of metal layers 20, so that the plurality of metal layers 20 are separated into different regions, whereby a predetermined circuit pattern (Pattern) can be quickly formed, and the electrical insulating layer 10 is formed with at least one for positioning The recessed corner structure 101 of the electrical insulation and heat conduction layer 30 filled between the metal layer 20 and the heat dissipation layer 40 can effectively position the electrical insulation heat conduction layer 30 filled between the metal layer 20 and the heat dissipation layer 40 .

在本實施例中,電絕緣層10可以是由矽膠所構成。電絕緣層10可以是由樹脂所構成。電絕緣層10較佳可以是以具高接合性的高分子材料、或是陶瓷材料等高絕緣材料所製成。In this embodiment, the electrical insulation layer 10 may be made of silicon gel. The electrical insulation layer 10 may be made of resin. The electrical insulation layer 10 is preferably made of high-insulation materials such as high-bondability polymer materials or ceramic materials.

在本實施例中,金屬層20可以是厚度介於1mm至5mm的厚銅塊,以更提高導熱均勻性與熱傳效率。並且,金屬層20的厚度與電絕緣層10的厚度不同,金屬層20的厚度被配置是小於電絕緣層10的厚度,以使電絕緣層10圍繞金屬層20後可填入電絕緣導熱層30。並且,本實施例的電絕緣層10底部可不接觸散熱層40。In this embodiment, the metal layer 20 may be a thick copper block with a thickness ranging from 1 mm to 5 mm, so as to further improve heat conduction uniformity and heat transfer efficiency. Moreover, the thickness of the metal layer 20 is different from the thickness of the electrical insulation layer 10, and the thickness of the metal layer 20 is configured to be smaller than the thickness of the electrical insulation layer 10, so that the electrical insulation layer 10 can fill in the electrical insulation and heat conduction layer after surrounding the metal layer 20 30. Moreover, the bottom of the electrical insulation layer 10 in this embodiment may not contact the heat dissipation layer 40 .

請參考圖3、4,本發明第二實施例提供一種絕緣金屬基板結構。如圖所示,根據本發明第二實施例所提供的絕緣金屬基板結構,其基本上包括有電絕緣層10、多個金屬層20、多個電絕緣導熱層30、以及散熱層40。Please refer to FIGS. 3 and 4 , the second embodiment of the present invention provides an insulated metal substrate structure. As shown in the figure, the insulated metal substrate structure provided according to the second embodiment of the present invention basically includes an electrical insulation layer 10 , a plurality of metal layers 20 , a plurality of electrical insulation and heat conduction layers 30 , and a heat dissipation layer 40 .

在本實施例中,金屬層20的數量示意為兩個,但金屬層20的數量並不限制,也可以為兩個以上。並且,本實施例的電絕緣層10圍繞多個金屬層20,以使多個金屬層20分隔不同區域,藉此可以快速形成預定線路圖形,並且電絕緣層10形成至少有一用以定位填入金屬層20與散熱層40之間的電絕緣導熱層30的凹角結構101,藉此可以有效定位填入金屬層20與散熱層40之間的電絕緣導熱層30。In this embodiment, the number of metal layers 20 is shown as two, but the number of metal layers 20 is not limited, and may be more than two. Moreover, the electrical insulation layer 10 of the present embodiment surrounds a plurality of metal layers 20, so that the plurality of metal layers 20 separate different regions, so that a predetermined circuit pattern can be quickly formed, and the electrical insulation layer 10 is formed with at least one for positioning and filling. The concave corner structure 101 of the electrically insulating and heat conducting layer 30 between the metal layer 20 and the heat dissipation layer 40 can effectively position the electrically insulating and heat conducting layer 30 filled between the metal layer 20 and the heat dissipation layer 40 .

並且,金屬層20的厚度與電絕緣層10的厚度不同,金屬層20的厚度被配置是小於電絕緣層10的厚度,以使電絕緣層10圍繞金屬層20後可填入電絕緣導熱層30。並且,本實施例的電絕緣層10底部是直接接觸散熱層40。以上是針對本實施例與其它實施例不同之處進行說明,而不再對相同之處作重複贅述。Moreover, the thickness of the metal layer 20 is different from the thickness of the electrical insulation layer 10, and the thickness of the metal layer 20 is configured to be smaller than the thickness of the electrical insulation layer 10, so that the electrical insulation layer 10 can fill in the electrical insulation and heat conduction layer after surrounding the metal layer 20 30. Moreover, the bottom of the electrical insulation layer 10 in this embodiment is in direct contact with the heat dissipation layer 40 . The above describes the differences between this embodiment and other embodiments, and the similarities will not be repeated.

綜合以上所述,本發明提供的絕緣金屬基板結構,其能通過「所述電絕緣層10圍繞多個所述金屬層20,使多個所述金屬層20分隔不同區域而形成預定線路圖形,且所述電絕緣層10形成至少有一用以定位填入所述金屬層20與所述散熱層40之間的所述電絕緣導熱層30的凹角結構101」的技術方案,使得多個金屬層能夠快速被電絕緣層分隔為不同區域而形成預定線路圖形,降低製程流程及成本,並且能夠有效定位填入金屬層與散熱層之間的電絕緣導熱層。Based on the above, the insulated metal substrate structure provided by the present invention can form a predetermined circuit pattern by "the electrical insulating layer 10 surrounding a plurality of the metal layers 20, so that the plurality of metal layers 20 separate different regions, And the electrical insulation layer 10 forms at least one technical solution for positioning the concave corner structure 101” of the electrical insulation and heat conduction layer 30 filled between the metal layer 20 and the heat dissipation layer 40, so that multiple metal layers It can be quickly divided into different regions by the electrical insulation layer to form a predetermined circuit pattern, which reduces the process flow and cost, and can effectively position the electrical insulation and heat conduction layer filled between the metal layer and the heat dissipation layer.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。The content disclosed above is only a preferred feasible embodiment of the present invention, and does not therefore limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

10:電絕緣層 101:凹角結構 20:金屬層 30:電絕緣導熱層 40:散熱層 10: Electrical insulation layer 101: concave corner structure 20: metal layer 30: Electrical insulation and heat conduction layer 40: heat dissipation layer

圖1為本發明第一實施例的俯視示意圖。FIG. 1 is a schematic top view of a first embodiment of the present invention.

圖2為圖1中的II-II線的剖面結構示意圖。FIG. 2 is a schematic cross-sectional structure diagram of line II-II in FIG. 1 .

圖3為本發明第二實施的俯視示意圖。FIG. 3 is a schematic top view of the second embodiment of the present invention.

圖4為圖3中的IV-IV線的剖面結構示意圖。FIG. 4 is a schematic cross-sectional structure diagram of line IV-IV in FIG. 3 .

10:電絕緣層 101:凹角結構 20:金屬層 30:電絕緣導熱層 40:散熱層 10: Electrical insulation layer 101: concave corner structure 20: metal layer 30: Electrical insulation and heat conduction layer 40: heat dissipation layer

Claims (9)

一種絕緣金屬基板結構,包括:電絕緣層、多個金屬層、多個電絕緣導熱層、以及散熱層,多個所述電絕緣導熱層形成在所述散熱層之上,所述電絕緣層圍繞多個所述金屬層,使多個所述金屬層分隔不同區域而形成預定線路圖形,且所述電絕緣層形成至少有一用以定位填入所述金屬層與所述散熱層之間的所述電絕緣導熱層的凹角結構。An insulated metal substrate structure, comprising: an electrical insulation layer, a plurality of metal layers, a plurality of electrical insulation and heat conduction layers, and a heat dissipation layer, a plurality of the electrical insulation and heat conduction layers are formed on the heat dissipation layer, and the electrical insulation layer Surrounding the plurality of metal layers, the plurality of metal layers are separated into different areas to form a predetermined circuit pattern, and the electrical insulation layer is formed with at least one hole for positioning and filling between the metal layer and the heat dissipation layer. The concave corner structure of the electrical insulation and heat conduction layer. 如請求項1所述的絕緣金屬基板結構,其中,所述電絕緣層是以具高接合性的高分子材料所製成。The insulated metal substrate structure as claimed in claim 1, wherein the electrical insulation layer is made of high-bonding polymer material. 如請求項1所述的絕緣金屬基板結構,其中,所述電絕緣導熱層是以具高接合性的高分子材料所製成,並且所述電絕緣導熱層包含有陶瓷填料。The insulated metal substrate structure according to claim 1, wherein the electrical insulation and heat conduction layer is made of a polymer material with high bondability, and the electrical insulation heat conduction layer contains ceramic fillers. 如請求項1所述的絕緣金屬基板結構,其中,所述金屬層的厚度被配置是小於所述電絕緣層的厚度。The insulated metal substrate structure of claim 1, wherein the thickness of the metal layer is configured to be less than the thickness of the electrically insulating layer. 如請求項4所述的絕緣金屬基板結構,其中,所述金屬層為厚度介於1mm至5mm的厚銅塊。The insulated metal substrate structure as claimed in claim 4, wherein the metal layer is a thick copper block with a thickness ranging from 1 mm to 5 mm. 如請求項1所述的絕緣金屬基板結構,其中,所述散熱層為一具散熱作用的金屬基板。The insulated metal substrate structure as claimed in claim 1, wherein the heat dissipation layer is a metal substrate with heat dissipation function. 如請求項1所述的絕緣金屬基板結構,其中,所述散熱層為一具散熱作用及絕緣性的陶瓷基板。The insulated metal substrate structure according to claim 1, wherein the heat dissipation layer is a ceramic substrate with heat dissipation and insulation properties. 如請求項1所述的絕緣金屬基板結構,其中,所述電絕緣層底部不接觸所述散熱層。The insulated metal substrate structure according to claim 1, wherein the bottom of the electrical insulation layer does not contact the heat dissipation layer. 如請求項1所述的絕緣金屬基板結構,其中,所述電絕緣層底部直接接觸所述散熱層。The insulated metal substrate structure according to claim 1, wherein the bottom of the electrical insulation layer directly contacts the heat dissipation layer.
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CN106664793A (en) * 2014-07-30 2017-05-10 住友电气工业株式会社 Heat-dissipating circuit board and method for manufacturing heat-dissipating circuit board
TW201909356A (en) * 2017-07-21 2019-03-01 聚鼎科技股份有限公司 Heat sink substrate
TW202002734A (en) * 2018-06-19 2020-01-01 歐銳奇有限公司 Manufacturing method of metal-based high-thermal-conduction substrate
TW202042614A (en) * 2019-05-01 2020-11-16 鈺橋半導體股份有限公司 Heat conductive wiring board and semiconductor assembly using the same
TWM615543U (en) * 2021-04-09 2021-08-11 艾姆勒車電股份有限公司 Insulated metal substrate structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106664793A (en) * 2014-07-30 2017-05-10 住友电气工业株式会社 Heat-dissipating circuit board and method for manufacturing heat-dissipating circuit board
TW201909356A (en) * 2017-07-21 2019-03-01 聚鼎科技股份有限公司 Heat sink substrate
TW202002734A (en) * 2018-06-19 2020-01-01 歐銳奇有限公司 Manufacturing method of metal-based high-thermal-conduction substrate
TW202042614A (en) * 2019-05-01 2020-11-16 鈺橋半導體股份有限公司 Heat conductive wiring board and semiconductor assembly using the same
TWM615543U (en) * 2021-04-09 2021-08-11 艾姆勒車電股份有限公司 Insulated metal substrate structure

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