TWI742887B - Igbt module with heat dissipation structure with special layer thickness ratio - Google Patents

Igbt module with heat dissipation structure with special layer thickness ratio Download PDF

Info

Publication number
TWI742887B
TWI742887B TW109136580A TW109136580A TWI742887B TW I742887 B TWI742887 B TW I742887B TW 109136580 A TW109136580 A TW 109136580A TW 109136580 A TW109136580 A TW 109136580A TW I742887 B TWI742887 B TW I742887B
Authority
TW
Taiwan
Prior art keywords
layer
heat dissipation
thickness ratio
dissipation structure
igbt module
Prior art date
Application number
TW109136580A
Other languages
Chinese (zh)
Other versions
TW202218074A (en
Inventor
戴世璽
葉子暘
Original Assignee
艾姆勒車電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 艾姆勒車電股份有限公司 filed Critical 艾姆勒車電股份有限公司
Priority to TW109136580A priority Critical patent/TWI742887B/en
Application granted granted Critical
Publication of TWI742887B publication Critical patent/TWI742887B/en
Publication of TW202218074A publication Critical patent/TW202218074A/en

Links

Images

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

An IGBT module with a heat dissipation structure with a special layer thickness ratio includes a layer of IGBT chips, an upper bonding layer, a circuit layer, an insulating layer, and a heat dissipation layer. The insulating layer is disposed on the heat dissipation layer, the circuit layer is disposed on the insulating layer, the upper bonding layer is disposed on the circuit layer, and the layer of IGBT chips is disposed on the upper bonding layer. The thickness of the insulating layer is less than 0.2 mm, the thickness of the circuit layer is 1.5 mm to 3 mm, and the layer thickness ratio of the circuit layer to the insulating layer is greater than or equal to 7.5:1.

Description

具特殊層厚比例之IGBT模組散熱結構IGBT module heat dissipation structure with special layer thickness ratio

本發明涉及IGBT模組,具體來說是涉及具特殊層厚比例之IGBT模組散熱結構。The present invention relates to an IGBT module, in particular to an IGBT module heat dissipation structure with a special layer thickness ratio.

目前電動汽車/混合動力汽車,所使用的大功率逆變器(Inverter),多採用IGBT(Insulated Gate Bipolar Transistor:絕緣閘極雙極性電晶體)晶片。因此,大功率逆變器工作時所產生的熱量,將導致IGBT晶片溫度升高,如果沒有適當的散熱措施,就可能使IGBT晶片的溫度超過所允許的溫度,從而導致性能惡化以致損壞。因此,IGBT散熱技術成為相關技術人員急於解決的問題。At present, high-power inverters (Inverters) used in electric vehicles/hybrid vehicles mostly use IGBT (Insulated Gate Bipolar Transistor) chips. Therefore, the heat generated by the high-power inverter during operation will cause the temperature of the IGBT chip to rise. Without proper heat dissipation measures, the temperature of the IGBT chip may exceed the allowable temperature, resulting in performance deterioration and damage. Therefore, the IGBT heat dissipation technology has become a problem that related technicians are eager to solve.

目前DBC(Direct Bonding Copper:陶瓷-金屬複合板結構)板已成為IGBT模組的首選材料。請參考圖1所示,為一種現有的IGBT模組散熱結構,其主要包括有IGBT晶片層11A、上銲接層12A、DBC板13A、下銲接層14A、及散熱層15A。其中,DBC板13A由上到下依次為上薄銅層131A、絕緣層132A和下薄銅層133A。然而,DBC板13A為多層結構且導熱能力有限,當IGBT晶片層11A產生熱量時,不能及時通過DBC板13A傳遞到散熱層15A,從而影響到導熱性能。At present, DBC (Direct Bonding Copper: ceramic-metal composite board structure) board has become the material of choice for IGBT modules. Please refer to FIG. 1, which is an existing IGBT module heat dissipation structure, which mainly includes an IGBT chip layer 11A, an upper welding layer 12A, a DBC board 13A, a lower welding layer 14A, and a heat dissipation layer 15A. Among them, the DBC board 13A includes an upper thin copper layer 131A, an insulating layer 132A, and a lower thin copper layer 133A from top to bottom. However, the DBC board 13A has a multi-layer structure and has limited thermal conductivity. When the IGBT wafer layer 11A generates heat, it cannot be transferred to the heat dissipation layer 15A through the DBC board 13A in time, thereby affecting the thermal conductivity.

有鑑於此,本發明人本於多年從事相關產品之開發與設計,有感上述缺失之可改善,乃特潛心研究並配合學理之運用,終於提出一種設計合理且有效改善上述缺失之本發明。In view of this, the present inventor has been engaged in the development and design of related products for many years, and feels that the above-mentioned shortcomings can be improved. With great concentration of research and the application of scientific theory, we finally propose an invention with reasonable design and effective improvement of the above-mentioned shortcomings.

本發明所要解決的技術問題在於,針對現有技術的不足提供一種具特殊層厚比例之IGBT模組散熱結構。The technical problem to be solved by the present invention is to provide an IGBT module heat dissipation structure with a special layer thickness ratio in view of the shortcomings of the prior art.

為了解決上述的技術問題,本發明提供一種具特殊層厚比例之IGBT模組散熱結構,包括:IGBT晶片層、上接合層、線路層、絕緣層、及散熱層;所述絕緣層形成在所述散熱層之上,所述線路層形成在所述絕緣層之上,所述上接合層形成在所述線路層之上,所述IGBT晶片層形成在所述上接合層之上;其中,所述絕緣層厚度小於0.2mm,所述線路層厚度為1.5mm~3mm,且所述線路層與所述絕緣層的厚度比例大於或等於7.5:1。In order to solve the above technical problems, the present invention provides an IGBT module heat dissipation structure with a special layer thickness ratio, including: an IGBT chip layer, an upper bonding layer, a circuit layer, an insulating layer, and a heat dissipation layer; On the heat dissipation layer, the circuit layer is formed on the insulating layer, the upper bonding layer is formed on the circuit layer, and the IGBT wafer layer is formed on the upper bonding layer; wherein, The thickness of the insulating layer is less than 0.2 mm, the thickness of the circuit layer is 1.5 mm to 3 mm, and the thickness ratio of the circuit layer to the insulating layer is greater than or equal to 7.5:1.

在一優選實施例中,所述絕緣層為環氧樹脂層、聚醯亞胺層、聚丙烯層的其中之一。In a preferred embodiment, the insulating layer is one of an epoxy resin layer, a polyimide layer, and a polypropylene layer.

在一優選實施例中,所述絕緣層包含有填料,所述填料選自氧化鋁、氮化鋁、氮化矽、碳化矽、氮化硼的至少其一。In a preferred embodiment, the insulating layer includes a filler, and the filler is selected from at least one of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.

在一優選實施例中,所述絕緣層以陶瓷材料所構成。In a preferred embodiment, the insulating layer is made of ceramic material.

在一優選實施例中,所述陶瓷材料選自氧化鋁、氮化鋁、或氮化矽的至少其一。In a preferred embodiment, the ceramic material is selected from at least one of alumina, aluminum nitride, or silicon nitride.

在一優選實施例中,所述線路層以金屬材料所構成。In a preferred embodiment, the circuit layer is made of metal material.

在一優選實施例中,所述線路層是填充有導電填料的導電高分子複合材料所構成。In a preferred embodiment, the circuit layer is composed of a conductive polymer composite material filled with conductive fillers.

在一優選實施例中,所述的具特殊層厚比例之IGBT模組散熱結構,更包括:下接合層,所述下接合層形成於所述線路層及所述絕緣層之間。In a preferred embodiment, the heat dissipation structure of the IGBT module with a special layer thickness ratio further includes a lower bonding layer formed between the circuit layer and the insulating layer.

在一優選實施例中,所述下接合層是錫接合層、銀燒結層的其中之一。In a preferred embodiment, the lower bonding layer is one of a tin bonding layer and a silver sintered layer.

在一優選實施例中,所述下接合層是高分子複合層。In a preferred embodiment, the lower bonding layer is a polymer composite layer.

本發明的有益效果至少在於,本發明提供的具特殊層厚比例之IGBT模組散熱結構,其能通過「絕緣層厚度小於0.2mm,線路層厚度為1.5mm~3mm,且線路層與絕緣層的厚度比例大於或等於7.5:1」的技術方案,達到更有效的使IGBT晶片產生的熱量迅速散出去的作用。The beneficial effect of the present invention is at least that the heat dissipation structure of the IGBT module with a special layer thickness ratio provided by the present invention can pass "the thickness of the insulating layer is less than 0.2mm, the thickness of the circuit layer is 1.5mm~3mm, and the circuit layer and the insulating layer The thickness ratio is greater than or equal to 7.5:1" to achieve a more effective role in quickly dissipating the heat generated by the IGBT chip.

為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings about the present invention. However, the provided drawings are only for reference and description, and are not used to limit the present invention.

以下是通過特定的具體實施例來說明本發明所公開有關的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。The following are specific specific examples to illustrate related implementations disclosed in the present invention, and those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be based on different viewpoints and applications, and various modifications and changes can be made without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to actual dimensions, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.

請參考圖2,本發明提供一種具特殊層厚比例之IGBT模組散熱結構。如圖所示,根據本發明所提供的具特殊層厚比例之IGBT模組散熱結構,從上到下依序為IGBT晶片層11、上接合層12、線路層13、絕緣層14、以及散熱層15。Please refer to FIG. 2. The present invention provides an IGBT module heat dissipation structure with a special layer thickness ratio. As shown in the figure, according to the IGBT module heat dissipation structure with a special layer thickness ratio provided by the present invention, from top to bottom, the IGBT chip layer 11, the upper bonding layer 12, the circuit layer 13, the insulating layer 14, and the heat dissipation Layer 15.

所述絕緣層14形成在所述散熱層15之上。其中,所述散熱層14可以是鋁製散熱器(heat sink)、水冷散熱器,也可是具有散熱作用的金屬基板,然並不侷限於此。The insulating layer 14 is formed on the heat dissipation layer 15. Wherein, the heat dissipation layer 14 may be an aluminum heat sink, a water-cooled heat sink, or a metal substrate with heat dissipation function, but it is not limited to this.

在一實施例中,所述絕緣層14可以是以陶瓷材料所構成,所述陶瓷材料可選自氧化鋁,但也可以選自氮化鋁、氮化矽、或碳化矽。In an embodiment, the insulating layer 14 may be made of a ceramic material, and the ceramic material may be selected from aluminum oxide, but may also be selected from aluminum nitride, silicon nitride, or silicon carbide.

在一實施例中,所述絕緣層14可以是以高分子複合材料(polymer composite)所構成。進一步說,所述絕緣層14可以是環氧樹脂層(epoxy-based composite)。並且,所述絕緣層14可包含有填料(filler),如氧化鋁、氮化鋁、氮化矽、碳化矽、氮化硼的至少其一。在其他實施例中,所述絕緣層14也可以是聚醯亞胺層(polyimide-based composite)、或是聚丙烯層(PP-based composite)。In one embodiment, the insulating layer 14 may be formed of a polymer composite. Furthermore, the insulating layer 14 may be an epoxy-based composite. In addition, the insulating layer 14 may include a filler, such as at least one of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride. In other embodiments, the insulating layer 14 may also be a polyimide-based composite or a polypropylene layer (PP-based composite).

所述線路層13形成在所述絕緣層14之上,使所述線路層13與所述散熱層15之間能透過所述絕緣層14形成絕緣,且使所述線路層13能透過所述絕緣層14將熱傳導至所述散熱層15。The circuit layer 13 is formed on the insulating layer 14, so that the circuit layer 13 and the heat dissipation layer 15 can pass through the insulating layer 14 to form insulation, and the circuit layer 13 can pass through the The insulating layer 14 conducts heat to the heat dissipation layer 15.

在一實施例中,所述線路層13可以是以金屬材料所構成,例如銅。進一步說,所述線路層13可以是利用超音速氣流將顆粒化的金屬材料高速撞擊在絕緣層14表面上所形成一具有預定厚度的線路層。所述線路層13也可以是直接由厚銅塊所構成。In an embodiment, the circuit layer 13 may be made of a metal material, such as copper. Furthermore, the circuit layer 13 may be a circuit layer with a predetermined thickness formed by using supersonic airflow to impact granulated metal materials on the surface of the insulating layer 14 at a high speed. The circuit layer 13 may also be directly composed of thick copper blocks.

在一實施例中,所述線路層13可以是填充有導電填料(如金屬)的導電高分子複合材料所構成。In an embodiment, the circuit layer 13 may be formed of a conductive polymer composite material filled with conductive fillers (such as metal).

所述上接合層12形成在所述線路層13之上。所述上接合層12可以是錫接合層,但也可以是銀燒結層。所述IGBT晶片層11可以是由至少一IGBT晶片111所構成,且其中一個IGBT晶片111可以置換為二極體晶片。並且,所述IGBT晶片層11是透過所述上接合層12與所述線路層13形成連接。當所述IGBT晶片111發熱時,可藉由所述線路層13及所述絕緣層14將熱量傳導至所述散熱層15,以向外散熱。The upper bonding layer 12 is formed on the circuit layer 13. The upper bonding layer 12 may be a tin bonding layer, but may also be a silver sintered layer. The IGBT wafer layer 11 may be composed of at least one IGBT wafer 111, and one of the IGBT wafers 111 may be replaced with a diode wafer. In addition, the IGBT wafer layer 11 is connected to the circuit layer 13 through the upper bonding layer 12. When the IGBT chip 111 generates heat, the circuit layer 13 and the insulating layer 14 can conduct heat to the heat dissipation layer 15 to dissipate heat outward.

並且,為了使IGBT晶片111產生的熱量更迅速散出去,本發明的具特殊層厚比例之IGBT模組散熱結構的所述絕緣層14厚度小於0.2mm,所述線路層13厚度為1.5mm~3mm,且所述線路層13與所述絕緣層14的厚度比例大於或等於7.5:1。In addition, in order to dissipate the heat generated by the IGBT chip 111 more quickly, the thickness of the insulating layer 14 of the heat dissipation structure of the IGBT module with a special layer thickness ratio of the present invention is less than 0.2 mm, and the thickness of the circuit layer 13 is 1.5 mm~ 3 mm, and the thickness ratio of the circuit layer 13 to the insulating layer 14 is greater than or equal to 7.5:1.

根據溫度實測結果,當所述絕緣層14厚度為0.1mm,所述線路層13厚度為0.1mm,所述IGBT晶片111實測溫度為184.03度。當所述絕緣層14厚度為0.1mm,所述線路層13厚度為0.5mm,所述IGBT晶片111實測溫度為168.27度。當所述絕緣層14厚度為0.1mm,所述線路層13厚度為1mm,所述IGBT晶片111實測溫度為159.77度。當所述絕緣層14厚度為0.1mm,所述線路層13厚度為2mm,所述IGBT晶片111實測溫度為150.93度。當所述絕緣層14厚度為0.1mm,所述線路層13厚度為3mm,所述IGBT晶片111實測溫度為146.69度。According to the actual temperature measurement result, when the thickness of the insulating layer 14 is 0.1 mm and the thickness of the circuit layer 13 is 0.1 mm, the measured temperature of the IGBT wafer 111 is 184.03 degrees. When the thickness of the insulating layer 14 is 0.1 mm and the thickness of the circuit layer 13 is 0.5 mm, the measured temperature of the IGBT chip 111 is 168.27 degrees. When the thickness of the insulating layer 14 is 0.1 mm and the thickness of the circuit layer 13 is 1 mm, the measured temperature of the IGBT chip 111 is 159.77 degrees. When the thickness of the insulating layer 14 is 0.1 mm and the thickness of the circuit layer 13 is 2 mm, the measured temperature of the IGBT chip 111 is 150.93 degrees. When the thickness of the insulating layer 14 is 0.1 mm and the thickness of the circuit layer 13 is 3 mm, the measured temperature of the IGBT chip 111 is 146.69 degrees.

因此實測結果很明顯的說明了當所述絕緣層14厚度小於0.2mm,所述線路層13厚度為1.5mm~3mm,以使所述線路層13與所述絕緣層14的厚度比例大於或等於7.5:1,能更有效的使所述IGBT晶片111產生的熱量迅速散出去。Therefore, the actual measurement results clearly indicate that when the thickness of the insulating layer 14 is less than 0.2 mm, the thickness of the circuit layer 13 is 1.5 mm to 3 mm, so that the thickness ratio of the circuit layer 13 to the insulating layer 14 is greater than or equal to 7.5:1, which can more effectively dissipate the heat generated by the IGBT chip 111 quickly.

請參考圖3,本發明另提供一種具特殊層厚比例之IGBT模組散熱結構。如圖所示,根據本發明所提供的IGBT模組封裝結構,從上到下依序為IGBT晶片層11、上接合層12、線路層13、下接合層16、絕緣層14、以及散熱層15。Please refer to FIG. 3, the present invention also provides an IGBT module heat dissipation structure with a special layer thickness ratio. As shown in the figure, according to the IGBT module package structure provided by the present invention, from top to bottom, there are IGBT chip layer 11, upper bonding layer 12, circuit layer 13, lower bonding layer 16, insulating layer 14, and heat dissipation layer. 15.

在本實施例中,具特殊層厚比例之IGBT模組散熱結構更包括有所述下接合層16。並且,所述下接合層16形成於所述線路層13及所述絕緣層14之間,用於使所述線路層13與所述絕緣層14能更好的接合。In this embodiment, the heat dissipation structure of the IGBT module with a special layer thickness ratio further includes the lower bonding layer 16. In addition, the lower bonding layer 16 is formed between the circuit layer 13 and the insulating layer 14 for better bonding of the circuit layer 13 and the insulating layer 14.

在一實施例中,所述下接合層16可以是錫接合層,但也可以是銀燒結層。In an embodiment, the lower bonding layer 16 may be a tin bonding layer, but may also be a silver sintered layer.

在一實施例中,所述下接合層16也可以是高分子複合層,例如環氧樹脂層、聚醯亞胺層、或聚丙烯層。In an embodiment, the lower bonding layer 16 may also be a polymer composite layer, such as an epoxy resin layer, a polyimide layer, or a polypropylene layer.

綜合以上所述,本發明提供的具特殊層厚比例之IGBT模組散熱結構,其能通過「絕緣層14厚度小於0.2mm,線路層13厚度為1.5mm~3mm,且線路層13與絕緣層14的厚度比例大於或等於7.5:1」的技術方案,達到更有效的使IGBT晶片111產生的熱量迅速散出去的作用。In summary, the IGBT module heat dissipation structure with a special layer thickness ratio provided by the present invention can pass through "the thickness of the insulating layer 14 is less than 0.2mm, the thickness of the circuit layer 13 is 1.5mm~3mm, and the circuit layer 13 and the insulating layer The technical solution that the thickness ratio of 14 is greater than or equal to 7.5:1" achieves a more effective effect of quickly dissipating the heat generated by the IGBT chip 111.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。The content disclosed above is only the preferred and feasible embodiments of the present invention, and does not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the description and schematic content of the present invention are included in the application of the present invention. Within the scope of the patent.

[現有技術][current technology]

11A:IGBT晶片層11A: IGBT wafer layer

12A:上銲接層12A: Upper welding layer

13A:DBC板13A: DBC board

131A:上薄銅層131A: Upper thin copper layer

132A:絕緣層132A: Insulation layer

133A:下薄銅層133A: Lower thin copper layer

14A:下銲接層14A: Lower welding layer

15A:散熱層15A: Heat dissipation layer

[本發明][this invention]

11:IGBT晶片層11: IGBT wafer layer

111:IGBT晶片111: IGBT chip

12:上接合層12: Upper bonding layer

13:線路層13: Line layer

14:絕緣層14: Insulation layer

15:散熱層15: heat dissipation layer

16:下接合層16: Lower bonding layer

圖1為現有技術的一IGBT模組散熱結構側視示意圖。FIG. 1 is a schematic side view of a heat dissipation structure of an IGBT module in the prior art.

圖2為本發明的一具特殊層厚比例之IGBT模組散熱結構側視示意圖。2 is a schematic side view of the heat dissipation structure of an IGBT module with a special layer thickness ratio of the present invention.

圖3為本發明的另一具特殊層厚比例之IGBT模組散熱結構側視示意圖。3 is a schematic side view of another heat dissipation structure of an IGBT module with a special layer thickness ratio according to the present invention.

11:IGBT晶片層 11: IGBT wafer layer

111:IGBT晶片 111: IGBT chip

12:上接合層 12: Upper bonding layer

13:線路層 13: Line layer

14:絕緣層 14: Insulation layer

15:散熱層 15: heat dissipation layer

Claims (10)

一種具特殊層厚比例之IGBT模組散熱結構,包括:IGBT晶片層、上接合層、線路層、絕緣層、及散熱層;所述絕緣層形成在所述散熱層之上,所述線路層形成在所述絕緣層之上,所述上接合層形成在所述線路層之上,所述IGBT晶片層形成在所述上接合層之上;其中,所述絕緣層厚度為0.1mm,所述線路層厚度為2~3mm,且所述線路層厚度除以所述絕緣層厚度的比例而得的數值為20倍以上且30倍以下。 An IGBT module heat dissipation structure with a special layer thickness ratio, comprising: an IGBT chip layer, an upper bonding layer, a circuit layer, an insulating layer, and a heat dissipation layer; the insulating layer is formed on the heat dissipation layer, and the circuit layer Is formed on the insulating layer, the upper bonding layer is formed on the circuit layer, and the IGBT wafer layer is formed on the upper bonding layer; wherein the thickness of the insulating layer is 0.1 mm, so The thickness of the circuit layer is 2 to 3 mm, and the value obtained by dividing the thickness of the circuit layer by the ratio of the thickness of the insulating layer is 20 times or more and 30 times or less. 如請求項1所述的具特殊層厚比例之IGBT模組散熱結構,其中,所述絕緣層為環氧樹脂層、聚醯亞胺層、聚丙烯層的其中之一。 The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 1, wherein the insulating layer is one of an epoxy resin layer, a polyimide layer, and a polypropylene layer. 如請求項2所述的具特殊層厚比例之IGBT模組散熱結構,其中,所述絕緣層包含有填料,所述填料選自氧化鋁、氮化鋁、氮化矽、碳化矽、氮化硼的至少其一。 The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 2, wherein the insulating layer contains a filler, and the filler is selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and nitride At least one of boron. 如請求項1所述的具特殊層厚比例之IGBT模組散熱結構,其中,所述絕緣層以陶瓷材料所構成。 The heat dissipation structure of an IGBT module with a special layer thickness ratio according to claim 1, wherein the insulating layer is made of ceramic material. 如請求項4所述的具特殊層厚比例之IGBT模組散熱結構,其中,所述陶瓷材料選自氧化鋁、氮化鋁、或氮化矽的至少其一。 The heat dissipation structure of an IGBT module with a special layer thickness ratio according to claim 4, wherein the ceramic material is selected from at least one of aluminum oxide, aluminum nitride, or silicon nitride. 如請求項1所述的具特殊層厚比例之IGBT模組散熱結構,其中,所述線路層以金屬材料所構成。 The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 1, wherein the circuit layer is made of a metal material. 如請求項1所述的具特殊層厚比例之IGBT模組散熱結構,其中,所述線路層是填充有導電填料的導電高分子複合材料所構成。 The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 1, wherein the circuit layer is composed of a conductive polymer composite material filled with conductive fillers. 如請求項1所述的具特殊層厚比例之IGBT模組散熱結構,更包括:下接合層,所述下接合層形成於所述線路層及所述絕緣層之間。 The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 1, further comprising: a lower bonding layer formed between the circuit layer and the insulating layer. 如請求項8所述的具特殊層厚比例之IGBT模組散熱結構,其中,所述下接合層是錫接合層、銀燒結層的其中之一。 The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 8, wherein the lower bonding layer is one of a tin bonding layer and a silver sintered layer. 如請求項8所述的具特殊層厚比例之IGBT模組散熱結構,其中,所述下接合層是高分子複合層。The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 8, wherein the lower bonding layer is a polymer composite layer.
TW109136580A 2020-10-22 2020-10-22 Igbt module with heat dissipation structure with special layer thickness ratio TWI742887B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW109136580A TWI742887B (en) 2020-10-22 2020-10-22 Igbt module with heat dissipation structure with special layer thickness ratio

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW109136580A TWI742887B (en) 2020-10-22 2020-10-22 Igbt module with heat dissipation structure with special layer thickness ratio

Publications (2)

Publication Number Publication Date
TWI742887B true TWI742887B (en) 2021-10-11
TW202218074A TW202218074A (en) 2022-05-01

Family

ID=80782547

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109136580A TWI742887B (en) 2020-10-22 2020-10-22 Igbt module with heat dissipation structure with special layer thickness ratio

Country Status (1)

Country Link
TW (1) TWI742887B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM590780U (en) * 2019-10-04 2020-02-11 艾姆勒車電股份有限公司 Heat dissipation structure of IGBT modules with different copper thickness
TWM591706U (en) * 2019-10-04 2020-03-01 艾姆勒車電股份有限公司 IGBT module heat dissipation structure with ceramic material layer corresponding to chip position and area
TWM608970U (en) * 2020-10-22 2021-03-11 艾姆勒車電股份有限公司 IGBT module heat dissipation structure with special layer thickness ratio

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM590780U (en) * 2019-10-04 2020-02-11 艾姆勒車電股份有限公司 Heat dissipation structure of IGBT modules with different copper thickness
TWM591706U (en) * 2019-10-04 2020-03-01 艾姆勒車電股份有限公司 IGBT module heat dissipation structure with ceramic material layer corresponding to chip position and area
TWM608970U (en) * 2020-10-22 2021-03-11 艾姆勒車電股份有限公司 IGBT module heat dissipation structure with special layer thickness ratio

Also Published As

Publication number Publication date
TW202218074A (en) 2022-05-01

Similar Documents

Publication Publication Date Title
US9460981B2 (en) Semiconductor module
CN109637983B (en) Chip package
JP6786416B2 (en) Semiconductor device
WO2009076810A1 (en) Semiconductor power module and heat radiating method thereof
JPWO2014097798A1 (en) Semiconductor device
EP3026700B1 (en) Power module and manufacturing method thereof
TWM608970U (en) IGBT module heat dissipation structure with special layer thickness ratio
JP2019054069A (en) Semiconductor device
TWM591706U (en) IGBT module heat dissipation structure with ceramic material layer corresponding to chip position and area
JP7163583B2 (en) semiconductor equipment
US11081412B2 (en) Semiconductor device
WO2024016921A1 (en) Packaging structure of diode photovoltaic module and solar cell junction box device
TWI693684B (en) Igbt module with improved heat dissipation structure
TWM590780U (en) Heat dissipation structure of IGBT modules with different copper thickness
JP2012209470A (en) Semiconductor device, semiconductor device module, and manufacturing method of the semiconductor device
TWI742887B (en) Igbt module with heat dissipation structure with special layer thickness ratio
TWI660471B (en) Chip package
TWM566403U (en) Heat dissipation structure of IGBT module
TWI755087B (en) Igbt package structure
TWI696251B (en) Igbt module with improved heat dissipation structure
US11469154B2 (en) IGBT module with heat dissipation structure having specific layer thickness ratio
TWM608022U (en) IGBT module package structure
TWM575919U (en) Improved IGBT module cooling structure
US11508642B2 (en) Power module package structure
CN110911388A (en) Semiconductor device with a plurality of semiconductor chips