TWI742887B - Igbt module with heat dissipation structure with special layer thickness ratio - Google Patents

Abstract

An IGBT module with a heat dissipation structure with a special layer thickness ratio includes a layer of IGBT chips, an upper bonding layer, a circuit layer, an insulating layer, and a heat dissipation layer. The insulating layer is disposed on the heat dissipation layer, the circuit layer is disposed on the insulating layer, the upper bonding layer is disposed on the circuit layer, and the layer of IGBT chips is disposed on the upper bonding layer. The thickness of the insulating layer is less than 0.2 mm, the thickness of the circuit layer is 1.5 mm to 3 mm, and the layer thickness ratio of the circuit layer to the insulating layer is greater than or equal to 7.5:1.

Description

IGBT module heat dissipation structure with special layer thickness ratio

The present invention relates to an IGBT module, in particular to an IGBT module heat dissipation structure with a special layer thickness ratio.

At present, high-power inverters (Inverters) used in electric vehicles/hybrid vehicles mostly use IGBT (Insulated Gate Bipolar Transistor) chips. Therefore, the heat generated by the high-power inverter during operation will cause the temperature of the IGBT chip to rise. Without proper heat dissipation measures, the temperature of the IGBT chip may exceed the allowable temperature, resulting in performance deterioration and damage. Therefore, the IGBT heat dissipation technology has become a problem that related technicians are eager to solve.

At present, DBC (Direct Bonding Copper: ceramic-metal composite board structure) board has become the material of choice for IGBT modules. Please refer to FIG. 1, which is an existing IGBT module heat dissipation structure, which mainly includes an IGBT chip layer 11A, an upper welding layer 12A, a DBC board 13A, a lower welding layer 14A, and a heat dissipation layer 15A. Among them, the DBC board 13A includes an upper thin copper layer 131A, an insulating layer 132A, and a lower thin copper layer 133A from top to bottom. However, the DBC board 13A has a multi-layer structure and has limited thermal conductivity. When the IGBT wafer layer 11A generates heat, it cannot be transferred to the heat dissipation layer 15A through the DBC board 13A in time, thereby affecting the thermal conductivity.

In view of this, the present inventor has been engaged in the development and design of related products for many years, and feels that the above-mentioned shortcomings can be improved. With great concentration of research and the application of scientific theory, we finally propose an invention with reasonable design and effective improvement of the above-mentioned shortcomings.

The technical problem to be solved by the present invention is to provide an IGBT module heat dissipation structure with a special layer thickness ratio in view of the shortcomings of the prior art.

In order to solve the above technical problems, the present invention provides an IGBT module heat dissipation structure with a special layer thickness ratio, including: an IGBT chip layer, an upper bonding layer, a circuit layer, an insulating layer, and a heat dissipation layer; On the heat dissipation layer, the circuit layer is formed on the insulating layer, the upper bonding layer is formed on the circuit layer, and the IGBT wafer layer is formed on the upper bonding layer; wherein, The thickness of the insulating layer is less than 0.2 mm, the thickness of the circuit layer is 1.5 mm to 3 mm, and the thickness ratio of the circuit layer to the insulating layer is greater than or equal to 7.5:1.

In a preferred embodiment, the insulating layer is one of an epoxy resin layer, a polyimide layer, and a polypropylene layer.

In a preferred embodiment, the insulating layer includes a filler, and the filler is selected from at least one of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.

In a preferred embodiment, the insulating layer is made of ceramic material.

In a preferred embodiment, the ceramic material is selected from at least one of alumina, aluminum nitride, or silicon nitride.

In a preferred embodiment, the circuit layer is made of metal material.

In a preferred embodiment, the circuit layer is composed of a conductive polymer composite material filled with conductive fillers.

In a preferred embodiment, the heat dissipation structure of the IGBT module with a special layer thickness ratio further includes a lower bonding layer formed between the circuit layer and the insulating layer.

In a preferred embodiment, the lower bonding layer is one of a tin bonding layer and a silver sintered layer.

In a preferred embodiment, the lower bonding layer is a polymer composite layer.

The beneficial effect of the present invention is at least that the heat dissipation structure of the IGBT module with a special layer thickness ratio provided by the present invention can pass "the thickness of the insulating layer is less than 0.2mm, the thickness of the circuit layer is 1.5mm~3mm, and the circuit layer and the insulating layer The thickness ratio is greater than or equal to 7.5:1" to achieve a more effective role in quickly dissipating the heat generated by the IGBT chip.

In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings about the present invention. However, the provided drawings are only for reference and description, and are not used to limit the present invention.

The following are specific specific examples to illustrate related implementations disclosed in the present invention, and those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be based on different viewpoints and applications, and various modifications and changes can be made without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to actual dimensions, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.

Please refer to FIG. 2. The present invention provides an IGBT module heat dissipation structure with a special layer thickness ratio. As shown in the figure, according to the IGBT module heat dissipation structure with a special layer thickness ratio provided by the present invention, from top to bottom, the IGBT chip layer 11, the upper bonding layer 12, the circuit layer 13, the insulating layer 14, and the heat dissipation Layer 15.

The insulating layer 14 is formed on the heat dissipation layer 15. Wherein, the heat dissipation layer 14 may be an aluminum heat sink, a water-cooled heat sink, or a metal substrate with heat dissipation function, but it is not limited to this.

In an embodiment, the insulating layer 14 may be made of a ceramic material, and the ceramic material may be selected from aluminum oxide, but may also be selected from aluminum nitride, silicon nitride, or silicon carbide.

In one embodiment, the insulating layer 14 may be formed of a polymer composite. Furthermore, the insulating layer 14 may be an epoxy-based composite. In addition, the insulating layer 14 may include a filler, such as at least one of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride. In other embodiments, the insulating layer 14 may also be a polyimide-based composite or a polypropylene layer (PP-based composite).

The circuit layer 13 is formed on the insulating layer 14, so that the circuit layer 13 and the heat dissipation layer 15 can pass through the insulating layer 14 to form insulation, and the circuit layer 13 can pass through the The insulating layer 14 conducts heat to the heat dissipation layer 15.

In an embodiment, the circuit layer 13 may be made of a metal material, such as copper. Furthermore, the circuit layer 13 may be a circuit layer with a predetermined thickness formed by using supersonic airflow to impact granulated metal materials on the surface of the insulating layer 14 at a high speed. The circuit layer 13 may also be directly composed of thick copper blocks.

In an embodiment, the circuit layer 13 may be formed of a conductive polymer composite material filled with conductive fillers (such as metal).

The upper bonding layer 12 is formed on the circuit layer 13. The upper bonding layer 12 may be a tin bonding layer, but may also be a silver sintered layer. The IGBT wafer layer 11 may be composed of at least one IGBT wafer 111, and one of the IGBT wafers 111 may be replaced with a diode wafer. In addition, the IGBT wafer layer 11 is connected to the circuit layer 13 through the upper bonding layer 12. When the IGBT chip 111 generates heat, the circuit layer 13 and the insulating layer 14 can conduct heat to the heat dissipation layer 15 to dissipate heat outward.

In addition, in order to dissipate the heat generated by the IGBT chip 111 more quickly, the thickness of the insulating layer 14 of the heat dissipation structure of the IGBT module with a special layer thickness ratio of the present invention is less than 0.2 mm, and the thickness of the circuit layer 13 is 1.5 mm~ 3 mm, and the thickness ratio of the circuit layer 13 to the insulating layer 14 is greater than or equal to 7.5:1.

According to the actual temperature measurement result, when the thickness of the insulating layer 14 is 0.1 mm and the thickness of the circuit layer 13 is 0.1 mm, the measured temperature of the IGBT wafer 111 is 184.03 degrees. When the thickness of the insulating layer 14 is 0.1 mm and the thickness of the circuit layer 13 is 0.5 mm, the measured temperature of the IGBT chip 111 is 168.27 degrees. When the thickness of the insulating layer 14 is 0.1 mm and the thickness of the circuit layer 13 is 1 mm, the measured temperature of the IGBT chip 111 is 159.77 degrees. When the thickness of the insulating layer 14 is 0.1 mm and the thickness of the circuit layer 13 is 2 mm, the measured temperature of the IGBT chip 111 is 150.93 degrees. When the thickness of the insulating layer 14 is 0.1 mm and the thickness of the circuit layer 13 is 3 mm, the measured temperature of the IGBT chip 111 is 146.69 degrees.

Therefore, the actual measurement results clearly indicate that when the thickness of the insulating layer 14 is less than 0.2 mm, the thickness of the circuit layer 13 is 1.5 mm to 3 mm, so that the thickness ratio of the circuit layer 13 to the insulating layer 14 is greater than or equal to 7.5:1, which can more effectively dissipate the heat generated by the IGBT chip 111 quickly.

Please refer to FIG. 3, the present invention also provides an IGBT module heat dissipation structure with a special layer thickness ratio. As shown in the figure, according to the IGBT module package structure provided by the present invention, from top to bottom, there are IGBT chip layer 11, upper bonding layer 12, circuit layer 13, lower bonding layer 16, insulating layer 14, and heat dissipation layer. 15.

In this embodiment, the heat dissipation structure of the IGBT module with a special layer thickness ratio further includes the lower bonding layer 16. In addition, the lower bonding layer 16 is formed between the circuit layer 13 and the insulating layer 14 for better bonding of the circuit layer 13 and the insulating layer 14.

In an embodiment, the lower bonding layer 16 may be a tin bonding layer, but may also be a silver sintered layer.

In an embodiment, the lower bonding layer 16 may also be a polymer composite layer, such as an epoxy resin layer, a polyimide layer, or a polypropylene layer.

In summary, the IGBT module heat dissipation structure with a special layer thickness ratio provided by the present invention can pass through "the thickness of the insulating layer 14 is less than 0.2mm, the thickness of the circuit layer 13 is 1.5mm~3mm, and the circuit layer 13 and the insulating layer The technical solution that the thickness ratio of 14 is greater than or equal to 7.5:1" achieves a more effective effect of quickly dissipating the heat generated by the IGBT chip 111.

The content disclosed above is only the preferred and feasible embodiments of the present invention, and does not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the description and schematic content of the present invention are included in the application of the present invention. Within the scope of the patent.

[current technology]

11A: IGBT wafer layer

12A: Upper welding layer

13A: DBC board

131A: Upper thin copper layer

132A: Insulation layer

133A: Lower thin copper layer

14A: Lower welding layer

15A: Heat dissipation layer

[this invention]

11: IGBT wafer layer

111: IGBT chip

12: Upper bonding layer

13: Line layer

14: Insulation layer

15: heat dissipation layer

16: Lower bonding layer

FIG. 1 is a schematic side view of a heat dissipation structure of an IGBT module in the prior art.

2 is a schematic side view of the heat dissipation structure of an IGBT module with a special layer thickness ratio of the present invention.

3 is a schematic side view of another heat dissipation structure of an IGBT module with a special layer thickness ratio according to the present invention.

11: IGBT wafer layer

111: IGBT chip

12: Upper bonding layer

13: Line layer

14: Insulation layer

15: heat dissipation layer

Claims (10)

An IGBT module heat dissipation structure with a special layer thickness ratio, comprising: an IGBT chip layer, an upper bonding layer, a circuit layer, an insulating layer, and a heat dissipation layer; the insulating layer is formed on the heat dissipation layer, and the circuit layer Is formed on the insulating layer, the upper bonding layer is formed on the circuit layer, and the IGBT wafer layer is formed on the upper bonding layer; wherein the thickness of the insulating layer is 0.1 mm, so The thickness of the circuit layer is 2 to 3 mm, and the value obtained by dividing the thickness of the circuit layer by the ratio of the thickness of the insulating layer is 20 times or more and 30 times or less. The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 1, wherein the insulating layer is one of an epoxy resin layer, a polyimide layer, and a polypropylene layer. The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 2, wherein the insulating layer contains a filler, and the filler is selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and nitride At least one of boron. The heat dissipation structure of an IGBT module with a special layer thickness ratio according to claim 1, wherein the insulating layer is made of ceramic material. The heat dissipation structure of an IGBT module with a special layer thickness ratio according to claim 4, wherein the ceramic material is selected from at least one of aluminum oxide, aluminum nitride, or silicon nitride. The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 1, wherein the circuit layer is made of a metal material. The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 1, wherein the circuit layer is composed of a conductive polymer composite material filled with conductive fillers. The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 1, further comprising: a lower bonding layer formed between the circuit layer and the insulating layer. The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 8, wherein the lower bonding layer is one of a tin bonding layer and a silver sintered layer. The heat dissipation structure of the IGBT module with a special layer thickness ratio according to claim 8, wherein the lower bonding layer is a polymer composite layer.

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