TWM608022U - IGBT module package structure - Google Patents

Abstract

An IGBT module packaging structure includes: an IGBT wafer layer, an upper bonding layer, an insulating and thermally conductive composite layer, and a heat dissipation layer. The insulating and thermally conductive composite layer is formed on the heat dissipation layer, the upper bonding layer is formed on the insulating and thermally conductive composite layer, and the IGBT wafer layer is formed on the upper bonding layer. The insulating and thermally conductive composite layer includes an insulating layer and an upper copper layer formed on the insulating layer. One or more layers of upper packaging materials cover the IGBT chip layer and the upper bonding layer and are in contact with the upper surface of the upper copper layer. One or more layers of lower packaging materials are in contact with the sidewalls of the insulating layer and with the sidewalls of the upper copper layer. The rigidity of the lower packaging material is higher than the rigidity of the upper packaging material.

Description

IGBT module package structure

This creation relates to IGBT modules, specifically the packaging structure of IGBT modules.

At present, high-power inverters (Inverters) used in electric vehicles/hybrid vehicles mostly use IGBT (Insulated Gate Bipolar Transistor) chips. Therefore, the heat generated by the high-power inverter during operation will cause the temperature of the IGBT chip to rise. Without proper heat dissipation measures, the temperature of the IGBT chip may exceed the allowable temperature, resulting in performance deterioration and damage. Therefore, the IGBT heat dissipation technology has become a problem that relevant technical personnel are eager to solve.

At present, DBC (Direct Bonding Copper: ceramic-metal composite board structure) board has become the material of choice for IGBT modules. Please refer to FIG. 1, which is an existing IGBT module, which mainly includes an IGBT chip layer 11A, an upper welding layer 12A, a DBC board 13A, a lower welding layer 14A, and a heat dissipation layer 15A. Among them, the DBC board 13A includes an upper copper layer 131A, a ceramic layer 132A, and a lower copper layer 133A from top to bottom. However, the thermal expansion coefficient of the upper copper layer 131A has a low matching degree with the thermal expansion coefficient of the ceramic layer 132A, which is likely to cause cracks and poor contact due to thermal stress, thereby affecting the thermal conductivity.

In view of this, the inventor of this creation has been engaged in the development and design of related products for many years, and feels that the above-mentioned shortcomings can be improved. With great concentration of research and the use of scientific principles, we finally propose a rational design and effective improvement of the above-mentioned shortcomings .

The technical problem to be solved by this creation is to provide an IGBT module packaging structure in view of the shortcomings of the prior art.

In order to solve the above technical problems, this creation provides an IGBT module packaging structure, including: an IGBT chip layer, an upper bonding layer, an insulating and thermally conductive composite layer, and a heat dissipation layer; the insulating and thermally conductive composite layer is formed on the heat dissipation layer , The upper bonding layer is formed on the insulating and thermally conductive composite layer, and the IGBT wafer layer is formed on the upper bonding layer; wherein the insulating and thermally conductive composite layer includes an insulating layer and an insulating layer formed on the The upper copper layer above the insulating layer, one or more layers of upper encapsulating materials covering the IGBT chip layer and the upper bonding layer and contacting the upper surface of the upper copper layer, one or more layers of lower encapsulating materials and the insulation The layer is in contact with the side wall of the upper copper layer; wherein the rigidity of the lower encapsulation material is higher than the rigidity of the upper encapsulation material.

In a preferred embodiment, the hardness of the lower packaging material is higher than the hardness of the upper packaging material, the tensile strength of the lower packaging material is higher than the tensile strength of the upper packaging material, and the lower packaging material The compressibility is lower than the compressibility of the upper packaging material.

In a preferred embodiment, the upper packaging material is one of silicone material or elastic plastic.

In a preferred embodiment, the thickness of the upper packaging material is 5 to 20 mm.

In a preferred embodiment, the lower packaging material is one of rigid resin or rigid plastic.

In a preferred embodiment, the thickness of the lower packaging material is 1 to 5 mm.

In a preferred embodiment, the insulating layer is made of ceramic material.

In a preferred embodiment, the ceramic material is selected from at least one of alumina, aluminum nitride, or silicon nitride.

In a preferred embodiment, the insulating layer is one of an epoxy resin layer, a polyimide layer, and a polypropylene layer.

In a preferred embodiment, the insulating layer includes a filler, and the filler is selected from at least one of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.

In a preferred embodiment, the thickness of the upper copper layer is 0.1 to 4 mm.

The beneficial effect of this creation is at least that the IGBT module packaging structure provided by this creation can cover the IGBT chip layer and the upper bonding layer with one or more layers of upper packaging materials and contact the upper surface of the upper copper layer. One or more layers of lower encapsulation materials are in contact with the insulating layer and in contact with the sidewalls of the upper copper layer. "The rigidity of the lower encapsulation material is higher than that of the upper encapsulation material." The technical solution achieves the protection of water and moisture and increases electrical insulation. It can effectively reduce the phenomenon of cracking and poor contact caused by the mismatch of thermal expansion coefficient.

In order to further understand the features and technical content of this creation, please refer to the following detailed descriptions and drawings about this creation. However, the drawings provided are only for reference and explanation, and are not used to limit this creation.

The following are specific specific examples to illustrate the related implementations disclosed in this creation, and those skilled in the art can understand the advantages and effects of this creation from the content disclosed in this specification. This creation can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this creation. In addition, the drawings of this creation are merely schematic illustrations, and are not depicted in actual size, and are stated in advance. The following implementations will further describe the related technical content of this creation in detail, but the disclosed content is not intended to limit the protection scope of this creation. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.

Please refer to Figure 2. This creation provides an IGBT module packaging structure. As shown in the figure, according to the IGBT module package structure provided by this creation, from top to bottom, there are IGBT chip layer 11, upper bonding layer 12, insulating and thermally conductive composite layer 13, and heat dissipation layer 14 in order.

The insulating and thermally conductive composite layer 13 is formed on the heat dissipation layer 14. Wherein, the heat dissipation layer 14 may be an aluminum heat sink, a water-cooled heat sink, or a metal substrate with heat dissipation function, but it is not limited to this.

In addition, the insulating and thermally conductive composite layer 13 includes an insulating layer 130 and an upper copper layer 131 formed on the insulating layer 130. In this embodiment, the insulating and thermally conductive composite layer 13 further includes a lower copper layer 132 formed under the insulating layer 130 and a lower bonding layer 133 formed under the lower copper layer 132. In other embodiments, the insulating and thermally conductive composite layer 13 may not include the lower copper layer 132 and the lower bonding layer 133.

Furthermore, the insulating layer 130 of this embodiment may be made of a ceramic material, and the ceramic material may be selected from aluminum oxide, but may also be selected from aluminum nitride, silicon nitride, or silicon carbide. The upper copper layer 131 and the heat dissipation layer 14 can be insulated through the insulating layer 130, and the upper copper layer 131 can conduct heat to the heat dissipation layer 14 through the insulating layer 130. In addition, the upper copper layer 131 may be made of thick copper, which can effectively increase the uniformity of heat dissipation and the overall heat transfer efficiency.

The upper bonding layer 12 is formed on the insulating and thermally conductive composite layer 13, that is, on the upper copper layer 131 of the insulating and thermally conductive composite layer 13. The upper bonding layer 12 may be a tin bonding layer, but may also be a silver sintered layer. The IGBT wafer layer 11 may be composed of at least one IGBT wafer 111, and one of the IGBT wafers 111 may be replaced with a diode wafer. In addition, the IGBT wafer layer 11 is connected to the upper copper layer 131 of the insulating and thermally conductive composite layer 13 through the upper bonding layer 12. When the IGBT chip 111 generates heat, the upper copper layer 131 can conduct heat to the heat dissipation layer 14 to dissipate heat outward.

One or more layers of upper packaging materials 20 cover the IGBT chip layer 11 and the upper bonding layer 12 and contact the upper surface of the upper copper layer 131.

One or more layers of lower encapsulation materials 30 are in contact with the side walls of the insulating layer 130 and in contact with the side walls of the upper copper layer 131. In addition, the rigidity of the lower packaging material 30 is higher than the rigidity of the upper packaging material 20. Furthermore, the hardness of the lower packaging material 30 is higher than the hardness of the upper packaging material 20, the tensile strength of the lower packaging material 30 is higher than the tensile strength of the upper packaging material 20, and the lower packaging material The compressibility of 30 is lower than that of the upper packaging material 20.

Furthermore, the upper packaging material 20 may be a silicon material or an elastic plastic, and the thickness of the upper packaging material 20 may be 5 to 20 mm, which can provide water-proof and moisture-proof protection and increase electrical insulation. The lower encapsulation material 30 may be rigid resin or rigid plastic, and the thickness of the lower encapsulation material 30 may be 1 to 5 mm, which can greatly reduce the thermal expansion coefficient of the upper copper layer 131 and the thermal expansion coefficient of the insulating layer 130 Cracking and poor contact caused by mismatch.

In this embodiment, the lower encapsulation material 30 is also in contact with the sidewalls of the lower copper layer 132, the sidewalls of the lower bonding layer 133, and the upper surface of the heat dissipation layer 14, so as to avoid the lower copper layer The thermal expansion coefficient of 132 does not match the thermal expansion coefficient of the heat dissipation layer 14 causing easy cracking.

Please refer to Figure 3, this creation also provides an IGBT module packaging structure. As shown in the figure, according to the IGBT module package structure provided by this creation, from top to bottom, there are IGBT chip layer 11, upper bonding layer 12, insulating and thermally conductive composite layer 13, and heat dissipation layer 14 in order.

The insulating and thermally conductive composite layer 13 is formed on the heat dissipation layer 14, the upper bonding layer 12 is formed on the insulating and thermally conductive composite layer 13, and the IGBT wafer layer 11 is formed on the upper bonding layer 12 on. In addition, the insulating and thermally conductive composite layer 13 includes an insulating layer 130 and an upper copper layer 131 formed on the insulating layer 130. In addition, the thickness of the upper copper layer 131 can be 0.1 to 4 mm, which can greatly increase the heat dissipation uniformity and the overall heat transfer efficiency.

In this embodiment, the insulating layer 130 is composed of a polymer composite. Furthermore, the insulating layer 130 may be an epoxy-based composite. In addition, the insulating layer 130 may include a filler, such as at least one of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride. In other embodiments, the insulating layer 130 may also be a polyimide-based composite or a polypropylene layer (PP-based composite).

One or more layers of upper packaging materials 20 cover the IGBT chip layer 11 and the upper bonding layer 12 and contact the upper surface of the upper copper layer 131.

One or more layers of lower encapsulation material 30 are in contact with the sidewall of the insulating layer 130, with the sidewall of the upper copper layer 131, and with the upper surface of the heat dissipation layer 14. In this embodiment, the rigidity of the lower packaging material 30 is higher than the rigidity of the upper packaging material 20. Furthermore, the hardness of the lower packaging material 30 is higher than the hardness of the upper packaging material 20, the tensile strength of the lower packaging material 30 is higher than the tensile strength of the upper packaging material 20, and the lower packaging material The compressibility of 30 is lower than that of the upper packaging material 20.

In this embodiment, the upper packaging material 20 can also be a silicone material or elastic plastic, and the thickness of the upper packaging material 20 can be 5 to 20 mm, which can provide water-proof and moisture-proof protection and increase electrical insulation. The lower encapsulation material 30 may also be rigid resin or rigid plastic, and the thickness of the lower encapsulation material 30 may be 1 to 5 mm, which can greatly reduce the thermal expansion coefficient of the upper copper layer 131 and the thermal expansion of the insulating layer 130 The mismatch between the coefficient and the thermal expansion coefficient of the heat dissipation layer 14 causes cracking, poor contact, and the like.

Based on the above, the IGBT module packaging structure provided by this creation can be "one or more layers of upper packaging material covering the IGBT chip layer and upper bonding layer, and contact with the upper surface of the upper copper layer", "one or more layers The lower packaging material is in contact with the insulating layer and is in contact with the side walls of the upper copper layer. "The rigidity of the lower packaging material is higher than that of the upper packaging material." The technical solution achieves the protection of water and moisture and increases the electrical insulation. And effectively reduce the phenomenon of cracking and poor contact caused by the mismatch of the thermal expansion coefficient.

The content disclosed above is only a preferred and feasible embodiment of this creation, and does not limit the scope of patent application for this creation. Therefore, all equivalent technical changes made using this creation specification and schematic content are included in the application for this creation. Within the scope of the patent.

[current technology] 11A: IGBT wafer layer 12A: Upper welding layer 13A: DBC board 131A: Upper copper layer 132A: Ceramic layer 133A: lower copper layer 14A: Lower welding layer 15A: Heat dissipation layer [This Creation] 11: IGBT wafer layer 111: IGBT chip 12: Upper bonding layer 13: Insulating and thermally conductive composite layer 130: insulating layer 131: Upper copper layer 132: lower copper layer 133: Lower bonding layer 14: Heat dissipation layer 20: Upper packaging material 30: Lower packaging material

FIG. 1 is a schematic side view of an IGBT module in the prior art.

Figure 2 is a schematic side view of the package structure of an IGBT module created.

Figure 3 is a schematic side view of another IGBT module package structure created.

11: IGBT wafer layer

111: IGBT chip

12: Upper bonding layer

13: Insulating and thermally conductive composite layer

130: insulating layer

131: Upper copper layer

132: lower copper layer

133: Lower bonding layer

14: Heat dissipation layer

20: Upper packaging material

30: Lower packaging material

Claims (11)

An IGBT module packaging structure, comprising: an IGBT wafer layer, an upper bonding layer, an insulating and thermally conductive composite layer, and a heat dissipation layer; the insulating and thermally conductive composite layer is formed on the heat dissipation layer, and the upper bonding layer is formed on the heat dissipation layer. On the insulating and thermally conductive composite layer, the IGBT chip layer is formed on the upper bonding layer; wherein, the insulating and thermally conductive composite layer includes an insulating layer and an upper copper layer formed on the insulating layer, One or more layers of upper encapsulation materials cover the IGBT chip layer and the upper bonding layer and contact the upper surface of the upper copper layer, and one or more layers of lower encapsulation materials are in contact with the insulating layer and are in contact with the upper copper layer. Sidewall contact; wherein the rigidity of the lower packaging material is higher than the rigidity of the upper packaging material. The IGBT module packaging structure according to claim 1, wherein the hardness of the lower packaging material is higher than the hardness of the upper packaging material, and the tensile strength of the lower packaging material is higher than that of the upper packaging material. The tensile strength, the compressibility of the lower packaging material is lower than the compressibility of the upper packaging material. The IGBT module packaging structure according to claim 1, wherein the upper packaging material is one of silicone material or elastic plastic. The IGBT module packaging structure according to claim 3, wherein the thickness of the upper packaging material is 5 to 20 mm. The IGBT module packaging structure according to claim 3, wherein the lower packaging material is one of rigid resin or rigid plastic. The IGBT module packaging structure according to claim 5, wherein the thickness of the lower packaging material is 1 to 5 mm. The IGBT module package structure according to claim 1, wherein the insulating layer is made of ceramic material. The IGBT module packaging structure according to claim 7, wherein the ceramic material is selected from at least one of aluminum oxide, aluminum nitride, or silicon nitride. The IGBT module packaging structure according to claim 1, wherein the insulating layer is one of an epoxy resin layer, a polyimide layer, and a polypropylene layer. The IGBT module packaging structure according to claim 9, wherein the insulating layer contains a filler, and the filler is selected from at least one of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride. The IGBT module packaging structure according to claim 1, wherein the thickness of the upper copper layer is 0.1 to 4 mm.

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