TWI781096B - 熱處理裝置 - Google Patents
熱處理裝置 Download PDFInfo
- Publication number
- TWI781096B TWI781096B TW106109550A TW106109550A TWI781096B TW I781096 B TWI781096 B TW I781096B TW 106109550 A TW106109550 A TW 106109550A TW 106109550 A TW106109550 A TW 106109550A TW I781096 B TWI781096 B TW I781096B
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- TW
- Taiwan
- Prior art keywords
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- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 61
- 238000001816 cooling Methods 0.000 claims abstract description 117
- 239000002826 coolant Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 abstract description 6
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000004044 response Effects 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016091525A JP6651408B2 (ja) | 2016-04-28 | 2016-04-28 | 熱処理装置 |
JP2016-091525 | 2016-04-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201738963A TW201738963A (zh) | 2017-11-01 |
TWI781096B true TWI781096B (zh) | 2022-10-21 |
Family
ID=60222554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106109550A TWI781096B (zh) | 2016-04-28 | 2017-03-22 | 熱處理裝置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6651408B2 (ja) |
KR (1) | KR102247115B1 (ja) |
CN (1) | CN107342244B (ja) |
TW (1) | TWI781096B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019180966A1 (ja) * | 2018-03-23 | 2019-09-26 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP7055075B2 (ja) * | 2018-07-20 | 2022-04-15 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
JP7101599B2 (ja) * | 2018-11-27 | 2022-07-15 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
CN111834247B (zh) * | 2019-04-23 | 2023-09-08 | 北京北方华创微电子装备有限公司 | 冷却装置和半导体处理设备 |
JP2023016497A (ja) * | 2021-07-21 | 2023-02-02 | 株式会社ジェイテクトサーモシステム | ヒータ端子カバー、ヒータユニット、および、熱処理装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01282619A (ja) * | 1988-05-10 | 1989-11-14 | Toshiba Corp | 半導体処理装置用温度制御装置 |
JPH06349753A (ja) * | 1993-06-07 | 1994-12-22 | Kokusai Electric Co Ltd | ヒータユニット冷却装置 |
TW266230B (ja) * | 1993-09-09 | 1995-12-21 | Tokyo Electron Co Ltd | |
US20020025688A1 (en) * | 2000-08-23 | 2002-02-28 | Kazuhiko Kato | Heat-processing apparatus and method of semiconductor process |
TW201342473A (zh) * | 2011-09-13 | 2013-10-16 | Tokyo Electron Ltd | 熱處理裝置、溫度控制系統、熱處理方法、溫度控制方法以及記錄有用以執行該熱處理方法或該溫度控制方法的程式之記錄媒體 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3519436B2 (ja) * | 1993-09-09 | 2004-04-12 | 東京エレクトロン株式会社 | 熱処理装置およびその温度制御方法 |
JP4551256B2 (ja) * | 2005-03-31 | 2010-09-22 | 東京エレクトロン株式会社 | 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム |
JP2008292026A (ja) * | 2007-05-23 | 2008-12-04 | Ats Japan Corp | 恒温維持装置。 |
JP5893280B2 (ja) * | 2010-09-09 | 2016-03-23 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
KR101509286B1 (ko) * | 2010-09-09 | 2015-04-06 | 도쿄엘렉트론가부시키가이샤 | 종형 열처리 장치 |
JP6170847B2 (ja) * | 2013-03-25 | 2017-07-26 | 株式会社日立国際電気 | 断熱構造体、加熱装置、基板処理装置および半導体装置の製造方法 |
-
2016
- 2016-04-28 JP JP2016091525A patent/JP6651408B2/ja active Active
-
2017
- 2017-02-28 CN CN201710116541.4A patent/CN107342244B/zh active Active
- 2017-03-08 KR KR1020170029475A patent/KR102247115B1/ko active IP Right Grant
- 2017-03-22 TW TW106109550A patent/TWI781096B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01282619A (ja) * | 1988-05-10 | 1989-11-14 | Toshiba Corp | 半導体処理装置用温度制御装置 |
JPH06349753A (ja) * | 1993-06-07 | 1994-12-22 | Kokusai Electric Co Ltd | ヒータユニット冷却装置 |
TW266230B (ja) * | 1993-09-09 | 1995-12-21 | Tokyo Electron Co Ltd | |
US20020025688A1 (en) * | 2000-08-23 | 2002-02-28 | Kazuhiko Kato | Heat-processing apparatus and method of semiconductor process |
TW201342473A (zh) * | 2011-09-13 | 2013-10-16 | Tokyo Electron Ltd | 熱處理裝置、溫度控制系統、熱處理方法、溫度控制方法以及記錄有用以執行該熱處理方法或該溫度控制方法的程式之記錄媒體 |
Also Published As
Publication number | Publication date |
---|---|
CN107342244A (zh) | 2017-11-10 |
TW201738963A (zh) | 2017-11-01 |
JP6651408B2 (ja) | 2020-02-19 |
KR20170123226A (ko) | 2017-11-07 |
KR102247115B1 (ko) | 2021-04-30 |
JP2017199874A (ja) | 2017-11-02 |
CN107342244B (zh) | 2024-02-20 |
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