TWI781096B - 熱處理裝置 - Google Patents

熱處理裝置 Download PDF

Info

Publication number
TWI781096B
TWI781096B TW106109550A TW106109550A TWI781096B TW I781096 B TWI781096 B TW I781096B TW 106109550 A TW106109550 A TW 106109550A TW 106109550 A TW106109550 A TW 106109550A TW I781096 B TWI781096 B TW I781096B
Authority
TW
Taiwan
Prior art keywords
sub
damper
container
chamber
medium
Prior art date
Application number
TW106109550A
Other languages
English (en)
Chinese (zh)
Other versions
TW201738963A (zh
Inventor
和田賴彥
Original Assignee
日商捷太格特熱處理股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商捷太格特熱處理股份有限公司 filed Critical 日商捷太格特熱處理股份有限公司
Publication of TW201738963A publication Critical patent/TW201738963A/zh
Application granted granted Critical
Publication of TWI781096B publication Critical patent/TWI781096B/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Furnace Details (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
TW106109550A 2016-04-28 2017-03-22 熱處理裝置 TWI781096B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016091525A JP6651408B2 (ja) 2016-04-28 2016-04-28 熱処理装置
JP2016-091525 2016-04-28

Publications (2)

Publication Number Publication Date
TW201738963A TW201738963A (zh) 2017-11-01
TWI781096B true TWI781096B (zh) 2022-10-21

Family

ID=60222554

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106109550A TWI781096B (zh) 2016-04-28 2017-03-22 熱處理裝置

Country Status (4)

Country Link
JP (1) JP6651408B2 (ja)
KR (1) KR102247115B1 (ja)
CN (1) CN107342244B (ja)
TW (1) TWI781096B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019180966A1 (ja) * 2018-03-23 2019-09-26 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
JP7055075B2 (ja) * 2018-07-20 2022-04-15 東京エレクトロン株式会社 熱処理装置及び熱処理方法
JP7101599B2 (ja) * 2018-11-27 2022-07-15 東京エレクトロン株式会社 熱処理装置及び熱処理方法
CN111834247B (zh) * 2019-04-23 2023-09-08 北京北方华创微电子装备有限公司 冷却装置和半导体处理设备
JP2023016497A (ja) * 2021-07-21 2023-02-02 株式会社ジェイテクトサーモシステム ヒータ端子カバー、ヒータユニット、および、熱処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01282619A (ja) * 1988-05-10 1989-11-14 Toshiba Corp 半導体処理装置用温度制御装置
JPH06349753A (ja) * 1993-06-07 1994-12-22 Kokusai Electric Co Ltd ヒータユニット冷却装置
TW266230B (ja) * 1993-09-09 1995-12-21 Tokyo Electron Co Ltd
US20020025688A1 (en) * 2000-08-23 2002-02-28 Kazuhiko Kato Heat-processing apparatus and method of semiconductor process
TW201342473A (zh) * 2011-09-13 2013-10-16 Tokyo Electron Ltd 熱處理裝置、溫度控制系統、熱處理方法、溫度控制方法以及記錄有用以執行該熱處理方法或該溫度控制方法的程式之記錄媒體

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3519436B2 (ja) * 1993-09-09 2004-04-12 東京エレクトロン株式会社 熱処理装置およびその温度制御方法
JP4551256B2 (ja) * 2005-03-31 2010-09-22 東京エレクトロン株式会社 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム
JP2008292026A (ja) * 2007-05-23 2008-12-04 Ats Japan Corp 恒温維持装置。
JP5893280B2 (ja) * 2010-09-09 2016-03-23 東京エレクトロン株式会社 縦型熱処理装置
KR101509286B1 (ko) * 2010-09-09 2015-04-06 도쿄엘렉트론가부시키가이샤 종형 열처리 장치
JP6170847B2 (ja) * 2013-03-25 2017-07-26 株式会社日立国際電気 断熱構造体、加熱装置、基板処理装置および半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01282619A (ja) * 1988-05-10 1989-11-14 Toshiba Corp 半導体処理装置用温度制御装置
JPH06349753A (ja) * 1993-06-07 1994-12-22 Kokusai Electric Co Ltd ヒータユニット冷却装置
TW266230B (ja) * 1993-09-09 1995-12-21 Tokyo Electron Co Ltd
US20020025688A1 (en) * 2000-08-23 2002-02-28 Kazuhiko Kato Heat-processing apparatus and method of semiconductor process
TW201342473A (zh) * 2011-09-13 2013-10-16 Tokyo Electron Ltd 熱處理裝置、溫度控制系統、熱處理方法、溫度控制方法以及記錄有用以執行該熱處理方法或該溫度控制方法的程式之記錄媒體

Also Published As

Publication number Publication date
CN107342244A (zh) 2017-11-10
TW201738963A (zh) 2017-11-01
JP6651408B2 (ja) 2020-02-19
KR20170123226A (ko) 2017-11-07
KR102247115B1 (ko) 2021-04-30
JP2017199874A (ja) 2017-11-02
CN107342244B (zh) 2024-02-20

Similar Documents

Publication Publication Date Title
TWI781096B (zh) 熱處理裝置
KR102287466B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
JP6170847B2 (ja) 断熱構造体、加熱装置、基板処理装置および半導体装置の製造方法
US8835811B2 (en) Thermal processing apparatus and method of controlling the same
US9255736B2 (en) Vertical-type heat treatment apparatus
TWI696229B (zh) 冷卻單元、隔熱構造體及基板處理裝置以及半導體裝置的製造方法
JP6752291B2 (ja) 基板処理装置、クーリングユニット及び断熱構造体並びに半導体装置の製造方法
JP2014529722A (ja) 冷却能力を高めた加熱要素
US20120064469A1 (en) Vertical-type heat treatment apparatus, and control method for same
KR20120026452A (ko) 종형 열처리 장치
KR102424677B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
KR101512874B1 (ko) 종형 열처리 장치 및 그 제어 방법
TWI783234B (zh) 加熱部、溫度控制系統、處理裝置及半導體裝置之製造方法
JP4791303B2 (ja) 基板処理装置およびこの装置に用いられる冷却手段、icの製造方法
JP7289355B2 (ja) 基板処理装置、半導体装置の製造方法及びプログラム
JP7307589B2 (ja) 熱処理炉
KR20160021621A (ko) 기판 열처리 장치 및 기판 열처리 방법

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent