TWI778783B - 用於印刷電路板光聚合層的二階照光聚合方法 - Google Patents

用於印刷電路板光聚合層的二階照光聚合方法 Download PDF

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TWI778783B
TWI778783B TW110133388A TW110133388A TWI778783B TW I778783 B TWI778783 B TW I778783B TW 110133388 A TW110133388 A TW 110133388A TW 110133388 A TW110133388 A TW 110133388A TW I778783 B TWI778783 B TW I778783B
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printed circuit
photopolymerization
circuit board
illumination
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TW202312809A (zh
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李家銘
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李蕙如
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/12—Selection of substances for gas fillings; Specified operating pressure or temperature
    • H01J61/18—Selection of substances for gas fillings; Specified operating pressure or temperature having a metallic vapour as the principal constituent
    • H01J61/20—Selection of substances for gas fillings; Specified operating pressure or temperature having a metallic vapour as the principal constituent mercury vapour
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning

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Abstract

一種用於印刷電路板光聚合層的二階照光聚合製程，包括：提供一頂面具有光聚合層的印刷電路板；利用一UV光源通過一數位微鏡裝置對該光聚合層第一次照光，且該UV光源的功率小於0.2 kW；停止該第一次照光；在該光聚合層上覆蓋一光罩，該光罩的一底面接觸該光聚合層；利用一汞燈通過該光罩對該光聚合層第二次照光，且該汞燈的功率大於5 kW。

Description

用於印刷電路板光聚合層的二階照光聚合方法
本發明是關於一種印刷電路板中光聚合層的圖形化製程，特別是一種藉由提供不同光源提高光聚合製程良率的製程。
印刷電路板一般具有多層絕緣材料及多層電路，其中一部份的絕緣材料以及用於將銅箔圖形化為電路的光阻層可能是以光聚合材料製成(以光聚合層的形式存在)，這些光聚合層可通過曝光、顯影的方式進行圖形化處理。
過往光聚合層是通過覆蓋光罩後進行照光而進行圖形化處理，但由於在照光前，光聚合層是處於未固化或半固化狀態，光罩經多次使用後，在覆蓋光罩時，有可能會在原本需要照光的位置沾染環境中的微粒，導致原本應照光的區域被微粒遮蔽而未照到光，使得後續在顯影的過程中，光聚合層會出現許多非必要的小孔。除此之外，光罩覆蓋在光聚合層的過程中，光罩本身也有可能壓傷光聚合層。也就是說，現有技術長期存在的問題是，因為以上所述的原因，光罩的使用會對圖形化處理的良率帶來不利的影響。
另一方面，無光罩光刻(Maskless Lithography)技術逐漸成為目前改良的趨勢，其中，使用數位微鏡裝置(Digital Micromirror Device；DMD)搭配UV光源進行直接寫入數位成像(Direct Imaging；DI)，從而可以在不使用 光罩的情況下，通過數位微鏡裝置控制照光的範圍，從而對光聚合層進行圖形化處理。雖然如此，上述DMD搭配UV光源的方式有其明顯缺陷在於，由於DMD無法承受過高的能量(否則可能超出其散熱器負荷)，因此UV光源的功率不能太高，而為了要提供光聚合層聚合所需的能量，UV光源必須以低功率高頻率的方式來供給能量至光聚合層；然而，如果光聚合層的厚度較大(例如防焊層)，或甚至光聚合層是有色的光聚合層(透光率較低)，那麼低功率的UV光將難以達到光聚合層的底部，造成底部固化不足的問題，從而在後續顯影、開窗時，會在顯影、開窗邊緣產生非常嚴重的內旋(overcut)。
因此，如何解決或至少減緩以上所有的問題，實是值得本領域人士思量的。
有鑑於此，本發明之主要目的在於提供一種能解決前述光罩易對圖形化處理的良率造成不利影響、同時又能用於處理大厚度光聚合層的製程。
為了達成上述的目的，本發明提供一種用於印刷電路板光聚合層的二階照光聚合製程，包括：提供一頂面具有光聚合層的印刷電路板；利用一UV光源通過一數位微鏡裝置對該光聚合層第一次照光，該UV光源在該第一次照光時所提供的能量小於該光聚合層完全固化所需的照光能量，且該UV光源的功率小於0.2kW；停止該第一次照光；在該光聚合層上覆蓋一光罩，該光罩的一底面接觸該光聚合層；利用一汞燈通過該光罩對該光聚合層第二次照光，該汞燈在該第 二次照光時所提供的能量不小於該光聚合層完全固化所需的照光能量減除該第一次照光所供給的能量，且該汞燈的功率大於5kW。
發明人發現，使用小功率UV光源進行第一次照光時，光聚合層會有從頂部開始固化的特性，同時數位微鏡裝置不需接觸光聚合層，就不會有顆粒污染及壓壞未固化/半固化的光聚合層的問題。而後，在汞燈第二次照光時，其大功率足以使即便厚度較大的光聚合層的底部也能完全固化，且由於在第二次照光前，光聚合層的頂部因為受到第一次照光的處理而已經固化，因此縱使在原本應第二次照光的位置沾黏顆粒，也不會在後續的顯影過程中形成小孔(硬化的光聚合層頂部可形成防護)，同時也不會壓傷已固化的光聚合層頂部，從而又能解決過往通過光罩進行圖形化處理所長期存在的問題。也因此，本發明可以成為一種良好的光聚合物圖形化處理製程，特別是對於一般厚度較厚的防焊層的處理，並且也在無光罩光刻趨勢中，逆勢提供了另一種高性價比的選擇。
1:光聚合層
2:印刷電路板
10:移載平台
20:數位微鏡裝置
30:UV光源
40:光罩
50:汞燈
S1:第一工作區
S2:第二工作區
S3:第三工作區
第1圖是本發明可應用的二階照光聚合設備的第一實施例的示意圖。
第2圖是本發明可應用的二階照光聚合設備的第一實施例的側視示意圖，其中部分元件省略未繪示。
第3至5圖是本發明本發明可應用的二階照光聚合設備的第一實施例的的工作流程示意圖。
第6圖是本發明本發明可應用的二階照光聚合設備的第二實施例的側視示意圖，其中部分元件省略未繪示。
請參考第1、2圖，所繪示者為本發明可應用的二階照光聚合設備的第一實施例，其可用於印刷電路板的光聚合層的照光聚合以對其進行圖形化處理。所述印刷電路板可為單層板結構或多層複合板結構，其可為軟性電路板(Flexible Printed Circuit,FPC)之載板或硬式電路板(Printed Circuit Board,PCB)之載板，所使用的材質可為但不限於聚乙烯對苯二甲酸酯(PET)或其他聚酯薄膜、聚醯亞胺薄膜、聚醯胺醯亞胺薄膜、聚丙烯薄膜、聚苯乙烯薄膜。所述光聚合層是指由光聚合物(photopolymer)所形成的層狀物，這些光聚合物通過照射光後會產生聚合，進而被固化，可能的光聚合層例如是用來對銅箔進行圖形化所需的光阻層或印刷電路板的電介質層，例如不透明的防焊油墨。本實施例的二階照光聚合設備包括一第一工作區S1、一第二工作區S2、一第三工作區S3、一移載平台10、一數位微鏡裝置20、一UV光源30、一光罩40及一汞燈50。
移載平台10供乘載頂面具有光聚合層1的印刷電路板2，移載平台10預設於第一工作區S1，且當移載平台10位於第一工作區S1時，可利用人工或自動化設備將所述印刷電路板2移動到移載平台10上。移載平台10工作時，可利用螺桿機構或其他位移機構將所乘載的印刷電路板2經由第二工作區S2移往第三工作區S3。在可能的實施方式中，光聚合層1完成照光聚合後，移載平台10會再回到第一工作區S1，再利用人工或自動化設備將所述印刷電路板2從移載平台10移出。
數位微鏡裝置20設於第二工作區S2，數位微鏡裝置20內具有許多微鏡片，並利用控制訊號控制各微鏡片翻轉而成為快速的數位光開關，能夠控制光線是否可以通過該數位微鏡裝置20，從而具有可對光聚合層1進行圖形 化照光聚合處理的功能。
UV光源30同樣設於第二工作區S2，其具有多個可激發光聚合物進行聚合的UV燈，當UV光源的功率較高時，可能會對數位微鏡裝置20造成損壞，因此UV光源的功率小於0.2kW，或甚至小於0.1kW。UV光源30可在移載平台10經過第二工作區S2的過程中，通過數位微鏡裝置20對光聚合層1第一次照光。
光罩40用以在移載平台10移動到第三工作區S3時，覆蓋並以其底面接觸光聚合層1。光罩40可被置於光罩框內，通過自動化設備進行位移。在可能的實施方式中，可能根據不同印刷電路板的漲縮值或出於其他考量而選擇使用不同的光罩40，光罩的替換可由人工或自動化設備完成。
汞燈50設於第三工作區S3，用以在光罩40覆蓋光聚合層1後，通過光罩40對光聚合層1第二次照光。本發明中，汞燈50的功率大於5kW，確保光聚合層1的底部都能夠充分照光。
以下說明本發明的二階照光聚合製程：首先，提供一頂面具有光聚合層1的印刷電路板2，所述光聚合層1可以是直接在印刷電路板2塗布光聚合物漿料而形成，或者，光聚合物也可以先被製作成乾膜的形式，再層合於印刷電路板2頂面而形成所述光聚合層1；形成光聚合層1後，印刷電路板2可被人工或自動化設備移動到位於第一工作區S1的移載平台10，即如第3圖所示；接著，如第4圖所示，移載平台10由第一工作區S1移往第二工作區S2，再利用UV光源30通過數位微鏡裝置20對光聚合層1第一次照光，UV光源30在第一次照光時所提供的能量小於光聚合層1完全固化所需的照光能量， 較佳者，UV光源30在第一次照光時所提供的能量小於光聚合層1完全固化所需的照光能量的二分之一，以減少第一次照光的製程時間；第一次照光後，至少光聚合層的頂部可被固化；之後，停止第一次照光，移載平台10繼續往第三工作區S3移動；接著，如第5圖所示，在光聚合層1上覆蓋光罩40，光罩40的底面接觸光聚合層1；由於光聚合層1頂面已經在第一次照光後固化，因此不會被光罩40壓傷，並且，也不會有光聚合層1的顆粒沾黏在光罩40上；最後，利用汞燈50通過光罩40對光聚合層1第二次照光，汞燈50在第二次照光時所提供的能量不小於光聚合層1完全固化所需的照光能量減除第一次照光所供給的能量，且由於汞燈50的功率超過5kW，因此即便是光聚合層1底部的光聚合物也能夠被完全固化(甚至是最大厚度不小於20μm的光聚合層1的底部)，從而可避免光聚合層1後續進行顯影、開窗時產生嚴重內旋的問題。在可能的實施方式中，完成第二次照光後，印刷電路板2也有可能在第三工作區S3就被移出。
另外，請參考第6圖，所繪示者為二階照光聚合設備的第二實施例，其與第一實施例的差異在於，其具有二移載平台10，當其中一個移載平台10在第二至第三工作區移動時，另一個移載平台可以繼續進行另一印刷電路板的移進、移出，兩者可交替進行印刷電路板在第一至第三工作區的輸送。
10:移載平台
20:數位微鏡裝置
30:UV光源
40:光罩
50:汞燈
S1:第一工作區
S2:第二工作區
S3:第三工作區

Claims (5)

  1. 一種用於印刷電路板光聚合層的二階照光聚合製程，包括： 提供一頂面具有光聚合層的印刷電路板； 利用一UV光源通過一數位微鏡裝置對該光聚合層第一次照光，該UV光源在該第一次照光時所提供的能量小於該光聚合層完全固化所需的照光能量，且該UV光源的功率小於0.2 kW； 停止該第一次照光； 在該光聚合層上覆蓋一光罩，該光罩的一底面接觸該光聚合層； 利用一汞燈通過該光罩對該光聚合層第二次照光，該汞燈在該第二次照光時所提供的能量不小於該光聚合層完全固化所需的照光能量減除該第一次照光所供給的能量，且該汞燈的功率大於5 kW。
  2. 如請求項1所述用於印刷電路板光聚合層的二階照光聚合製程，其中該UV光源在該第一次照光時所提供的能量小於該光聚合層完全固化所需的照光能量的二分之一。
  3. 如請求項1所述用於印刷電路板光聚合層的二階照光聚合製程，其中該UV光源的功率小於0.1 kW。
  4. 如請求項1所述用於印刷電路板光聚合層的二階照光聚合製程，其中該光聚合層的最大厚度不小於20 ㎛。
  5. 如請求項1至4中任一項所述用於印刷電路板光聚合層的二階照光聚合製程，其中該光聚合層為不透明的防焊油墨。
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TW200707122A (en) * 2005-06-24 2007-02-16 Fuji Photo Film Co Ltd Exposure method and apparatus
TW201625720A (zh) * 2015-01-12 2016-07-16 國立台灣科技大學 積層製造方法及光敏樹脂的光固化方法
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