TWI776394B - 真空處理設備、真空系統、氣體分壓控制組件及控制真空處理腔室中氣體分壓的方法 - Google Patents

真空處理設備、真空系統、氣體分壓控制組件及控制真空處理腔室中氣體分壓的方法 Download PDF

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Publication number
TWI776394B
TWI776394B TW110105921A TW110105921A TWI776394B TW I776394 B TWI776394 B TW I776394B TW 110105921 A TW110105921 A TW 110105921A TW 110105921 A TW110105921 A TW 110105921A TW I776394 B TWI776394 B TW I776394B
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Taiwan
Prior art keywords
vacuum
vacuum processing
chamber
gas
partial pressure
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TW110105921A
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English (en)
Chinese (zh)
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TW202147416A (zh
Inventor
陳春誠
張鴻文
林信宏
楊啟昌
克里斯托夫 蒙多夫
湯瑪士 爵伯勒
臼卷 吉兒瑪亞
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美商應用材料股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Fluid Pressure (AREA)
TW110105921A 2020-02-24 2021-02-20 真空處理設備、真空系統、氣體分壓控制組件及控制真空處理腔室中氣體分壓的方法 TWI776394B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/EP2020/054782 2020-02-24
PCT/EP2020/054782 WO2021170209A1 (en) 2020-02-24 2020-02-24 Vacuum processing apparatus, vacuum system, gas partial pressure control assembly, and method of controlling partial pressure of a gas in a vacuum processing chamber

Publications (2)

Publication Number Publication Date
TW202147416A TW202147416A (zh) 2021-12-16
TWI776394B true TWI776394B (zh) 2022-09-01

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Country Status (6)

Country Link
US (1) US20240102154A1 (cg-RX-API-DMAC7.html)
JP (1) JP7518165B2 (cg-RX-API-DMAC7.html)
KR (1) KR102789786B1 (cg-RX-API-DMAC7.html)
CN (1) CN114630922B (cg-RX-API-DMAC7.html)
TW (1) TWI776394B (cg-RX-API-DMAC7.html)
WO (1) WO2021170209A1 (cg-RX-API-DMAC7.html)

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US12695048B2 (en) 2022-09-13 2026-07-28 Applied Materials, Inc. Managing beam power effects by varying base emissivity
CN115654922B (zh) * 2022-12-28 2023-04-07 泰姆瑞（北京）精密技术有限公司 连续芯片封装焊接真空炉及其工作方法
CN116949413B (zh) * 2023-03-16 2024-04-12 无锡中科德芯感知科技有限公司 铟柱制备装置、制备方法、系统、电子设备及存储介质

Citations (3)

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US20140302624A1 (en) * 2013-04-04 2014-10-09 Samsung Display Co., Ltd. Deposition apparatus, method of forming thin film using the same, and method of manufacturing organic light emitting display apparatus
TW201903185A (zh) * 2017-03-24 2019-01-16 德商愛思強歐洲公司 用於減少ｏｖｐｄ塗佈裝置中ｈｏ分壓之裝置及方法
TW201945673A (zh) * 2018-04-09 2019-12-01 日商東京威力科創股份有限公司 結露防止方法及處理裝置

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JP2001254678A (ja) * 2000-03-10 2001-09-21 Sumitomo Heavy Ind Ltd クライオポンプ
US6440280B1 (en) * 2000-06-28 2002-08-27 Sola International, Inc. Multi-anode device and methods for sputter deposition
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CN104947039B (zh) * 2014-03-24 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 隔热挡板及反应腔室
JP2015216096A (ja) * 2014-04-25 2015-12-03 シャープ株式会社 有機エレクトロルミネッセンス表示装置用基板、有機エレクトロルミネッセンス表示装置、有機エレクトロルミネッセンス表示装置の製造方法、及び、有機エレクトロルミネッセンス表示装置の製造装置
CN206624912U (zh) * 2014-05-20 2017-11-10 应用材料公司 用于在基板上沉积材料的沉积装置
WO2017149413A1 (en) * 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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JP2018053272A (ja) * 2016-09-26 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置
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US20140302624A1 (en) * 2013-04-04 2014-10-09 Samsung Display Co., Ltd. Deposition apparatus, method of forming thin film using the same, and method of manufacturing organic light emitting display apparatus
TW201903185A (zh) * 2017-03-24 2019-01-16 德商愛思強歐洲公司 用於減少ｏｖｐｄ塗佈裝置中ｈｏ分壓之裝置及方法
TW201945673A (zh) * 2018-04-09 2019-12-01 日商東京威力科創股份有限公司 結露防止方法及處理裝置

Also Published As

Publication number Publication date
KR102789786B1 (ko) 2025-03-31
JP2023509814A (ja) 2023-03-10
TW202147416A (zh) 2021-12-16
JP7518165B2 (ja) 2024-07-17
CN114630922A (zh) 2022-06-14
WO2021170209A1 (en) 2021-09-02
KR20220104146A (ko) 2022-07-26
US20240102154A1 (en) 2024-03-28
CN114630922B (zh) 2025-03-11

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