JP7518165B2 - 真空処理装置、真空システム、ガス分圧制御アセンブリ、及び真空処理チャンバ内のガス分圧を制御する方法 - Google Patents

真空処理装置、真空システム、ガス分圧制御アセンブリ、及び真空処理チャンバ内のガス分圧を制御する方法 Download PDF

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JP7518165B2
JP7518165B2 JP2022524185A JP2022524185A JP7518165B2 JP 7518165 B2 JP7518165 B2 JP 7518165B2 JP 2022524185 A JP2022524185 A JP 2022524185A JP 2022524185 A JP2022524185 A JP 2022524185A JP 7518165 B2 JP7518165 B2 JP 7518165B2
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vacuum
vacuum processing
cooling surface
chamber
partial pressure
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JP2023509814A5 (cg-RX-API-DMAC7.html
JP2023509814A (ja
Inventor
チュン チョン チェン，
フン－ウェン チャン，
シン－フン リン，
チー－チャン ヤン，
クリストフ ムンドルフ，
トーマス ゲーベレ，
ユルゲン グリルマイヤー，
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Fluid Pressure (AREA)
JP2022524185A 2020-02-24 2020-02-24 真空処理装置、真空システム、ガス分圧制御アセンブリ、及び真空処理チャンバ内のガス分圧を制御する方法 Active JP7518165B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2020/054782 WO2021170209A1 (en) 2020-02-24 2020-02-24 Vacuum processing apparatus, vacuum system, gas partial pressure control assembly, and method of controlling partial pressure of a gas in a vacuum processing chamber

Publications (3)

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JP2023509814A JP2023509814A (ja) 2023-03-10
JP2023509814A5 JP2023509814A5 (cg-RX-API-DMAC7.html) 2023-03-22
JP7518165B2 true JP7518165B2 (ja) 2024-07-17

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Country Link
US (1) US20240102154A1 (cg-RX-API-DMAC7.html)
JP (1) JP7518165B2 (cg-RX-API-DMAC7.html)
KR (1) KR102789786B1 (cg-RX-API-DMAC7.html)
CN (1) CN114630922B (cg-RX-API-DMAC7.html)
TW (1) TWI776394B (cg-RX-API-DMAC7.html)
WO (1) WO2021170209A1 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12695048B2 (en) 2022-09-13 2026-07-28 Applied Materials, Inc. Managing beam power effects by varying base emissivity
CN115654922B (zh) * 2022-12-28 2023-04-07 泰姆瑞（北京）精密技术有限公司 连续芯片封装焊接真空炉及其工作方法
CN116949413B (zh) * 2023-03-16 2024-04-12 无锡中科德芯感知科技有限公司 铟柱制备装置、制备方法、系统、电子设备及存储介质

Citations (4)

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JP2001254678A (ja) 2000-03-10 2001-09-21 Sumitomo Heavy Ind Ltd クライオポンプ
WO2015037315A1 (ja) 2013-09-10 2015-03-19 株式会社島津製作所 成膜装置および成膜方法
JP2018053272A (ja) 2016-09-26 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置
JP2018123420A (ja) 2016-06-06 2018-08-09 株式会社半導体エネルギー研究所 スパッタリング装置、スパッタリングターゲット、及び当該スパッタリング装置を用いた半導体膜の作製方法

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JP4230564B2 (ja) * 1998-06-11 2009-02-25 パナソニック株式会社 スパッタリング装置
US6440280B1 (en) * 2000-06-28 2002-08-27 Sola International, Inc. Multi-anode device and methods for sputter deposition
KR101135519B1 (ko) * 2009-09-25 2012-04-09 주식회사 선익시스템 증발챔버의 진공펌프 보호장치
US20160181066A1 (en) * 2011-09-29 2016-06-23 Nitride Solutions, Inc. Laminated materials, methods and apparatus for making same, and uses thereof
US9103032B2 (en) * 2012-11-09 2015-08-11 Tsmc Solar Ltd. Apparatus and method for forming thin films in solar cells
KR102052074B1 (ko) * 2013-04-04 2019-12-05 삼성디스플레이 주식회사 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법
CN104947039B (zh) * 2014-03-24 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 隔热挡板及反应腔室
JP2015216096A (ja) * 2014-04-25 2015-12-03 シャープ株式会社 有機エレクトロルミネッセンス表示装置用基板、有機エレクトロルミネッセンス表示装置、有機エレクトロルミネッセンス表示装置の製造方法、及び、有機エレクトロルミネッセンス表示装置の製造装置
CN206624912U (zh) * 2014-05-20 2017-11-10 应用材料公司 用于在基板上沉积材料的沉积装置
WO2017149413A1 (en) * 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
DE102017106431A1 (de) * 2017-03-24 2018-09-27 Aixtron Se Vorrichtung und Verfahren zum Herabsetzen des Wasserpartialdrucks in einer OVPD-Beschichtungseinrichtung
CN107489604A (zh) * 2017-09-26 2017-12-19 安徽万瑞冷电科技有限公司 一种大容量低温泵及其工作方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001254678A (ja) 2000-03-10 2001-09-21 Sumitomo Heavy Ind Ltd クライオポンプ
WO2015037315A1 (ja) 2013-09-10 2015-03-19 株式会社島津製作所 成膜装置および成膜方法
JP2018123420A (ja) 2016-06-06 2018-08-09 株式会社半導体エネルギー研究所 スパッタリング装置、スパッタリングターゲット、及び当該スパッタリング装置を用いた半導体膜の作製方法
JP2018053272A (ja) 2016-09-26 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置

Also Published As

Publication number Publication date
KR102789786B1 (ko) 2025-03-31
JP2023509814A (ja) 2023-03-10
TW202147416A (zh) 2021-12-16
CN114630922A (zh) 2022-06-14
WO2021170209A1 (en) 2021-09-02
TWI776394B (zh) 2022-09-01
KR20220104146A (ko) 2022-07-26
US20240102154A1 (en) 2024-03-28
CN114630922B (zh) 2025-03-11

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