TWI770678B - 具有高沉積環及沉積環夾之處理套組 - Google Patents

具有高沉積環及沉積環夾之處理套組 Download PDF

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Publication number
TWI770678B
TWI770678B TW109140346A TW109140346A TWI770678B TW I770678 B TWI770678 B TW I770678B TW 109140346 A TW109140346 A TW 109140346A TW 109140346 A TW109140346 A TW 109140346A TW I770678 B TWI770678 B TW I770678B
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TW
Taiwan
Prior art keywords
deposition ring
ring
substrate support
deposition
channel
Prior art date
Application number
TW109140346A
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English (en)
Chinese (zh)
Other versions
TW202124746A (zh
Inventor
威廉 喬韓森
基倫古莫 沙芬戴亞
阿道夫米勒 艾倫
王新
布拉尚 卜拉布
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202124746A publication Critical patent/TW202124746A/zh
Application granted granted Critical
Publication of TWI770678B publication Critical patent/TWI770678B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Clamps And Clips (AREA)
TW109140346A 2015-07-03 2016-07-04 具有高沉積環及沉積環夾之處理套組 TWI770678B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
IN2029DE2015 2015-07-03
IN2029/DEL/2015 2015-07-03
US15/201,019 US9909206B2 (en) 2015-07-03 2016-07-01 Process kit having tall deposition ring and deposition ring clamp
US15/201,019 2016-07-01

Publications (2)

Publication Number Publication Date
TW202124746A TW202124746A (zh) 2021-07-01
TWI770678B true TWI770678B (zh) 2022-07-11

Family

ID=57683629

Family Applications (2)

Application Number Title Priority Date Filing Date
TW109140346A TWI770678B (zh) 2015-07-03 2016-07-04 具有高沉積環及沉積環夾之處理套組
TW105121124A TWI713543B (zh) 2015-07-03 2016-07-04 具有高沉積環及沉積環夾之處理套組

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW105121124A TWI713543B (zh) 2015-07-03 2016-07-04 具有高沉積環及沉積環夾之處理套組

Country Status (7)

Country Link
US (1) US9909206B2 (enExample)
JP (2) JP6976925B2 (enExample)
KR (1) KR102709082B1 (enExample)
CN (3) CN107787377A (enExample)
SG (1) SG10202108705SA (enExample)
TW (2) TWI770678B (enExample)
WO (1) WO2017007729A1 (enExample)

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TWI653885B (zh) * 2017-03-03 2019-03-11 宏碁股份有限公司 影像輸出方法及影像擷取裝置
KR20200033912A (ko) * 2017-09-15 2020-03-30 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치
US11056325B2 (en) * 2017-12-20 2021-07-06 Applied Materials, Inc. Methods and apparatus for substrate edge uniformity
CN110468377B (zh) * 2018-05-11 2022-04-22 北京北方华创微电子装备有限公司 腔室及半导体加工设备
JP7093850B2 (ja) * 2018-12-03 2022-06-30 株式会社アルバック 成膜装置及び成膜方法
USD888903S1 (en) 2018-12-17 2020-06-30 Applied Materials, Inc. Deposition ring for physical vapor deposition chamber
US11961723B2 (en) 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
US11361982B2 (en) * 2019-12-10 2022-06-14 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of electrostatic chucks
CN111235535B (zh) * 2020-01-22 2021-11-16 北京北方华创微电子装备有限公司 一种溅射反应腔室的工艺组件及其溅射反应腔室
US11935728B2 (en) * 2020-01-31 2024-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of manufacturing a semiconductor device
USD941372S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
US11339466B2 (en) 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
USD941371S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
USD934315S1 (en) 2020-03-20 2021-10-26 Applied Materials, Inc. Deposition ring for a substrate processing chamber
USD1034491S1 (en) 2020-07-27 2024-07-09 Applied Materials, Inc. Edge ring
US11380575B2 (en) 2020-07-27 2022-07-05 Applied Materials, Inc. Film thickness uniformity improvement using edge ring and bias electrode geometry
JP7223738B2 (ja) 2020-11-12 2023-02-16 株式会社アルバック スパッタリング装置
US11670493B2 (en) * 2020-11-13 2023-06-06 Applied Materials, Inc. Isolator ring clamp and physical vapor deposition chamber incorporating same
US11581167B2 (en) * 2021-06-18 2023-02-14 Applied Materials, Inc. Process kit having tall deposition ring and smaller diameter electrostatic chuck (ESC) for PVD chamber
US11915918B2 (en) 2021-06-29 2024-02-27 Applied Materials, Inc. Cleaning of sin with CCP plasma or RPS clean
US12183559B2 (en) 2021-10-22 2024-12-31 Applied Materials, Inc. Apparatus for temperature control in a substrate processing chamber
USD1059312S1 (en) * 2022-08-04 2025-01-28 Applied Materials, Inc. Deposition ring of a process kit for semiconductor substrate processing
USD1064005S1 (en) 2022-08-04 2025-02-25 Applied Materials, Inc. Grounding ring of a process kit for semiconductor substrate processing
USD1069863S1 (en) 2022-08-04 2025-04-08 Applied Materials, Inc. Deposition ring of a process kit for semiconductor substrate processing
US20240068086A1 (en) * 2022-08-29 2024-02-29 Applied Materials, Inc. Physical Vapor Deposition (PVD) Chamber Titanium-Tungsten (TiW) Target For Particle Improvement
CN119968474A (zh) * 2022-10-05 2025-05-09 应用材料公司 用于基板的掩模、基板支撑件、基板处理设备、用于在基板上进行层沉积的方法和制造一个或多个装置的方法

Citations (2)

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CN101089220A (zh) * 2005-10-31 2007-12-19 应用材料股份有限公司 用于衬底处理室的处理配件和靶材
CN101563560A (zh) * 2006-12-19 2009-10-21 应用材料公司 非接触式处理套件

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US6743340B2 (en) 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
US8221602B2 (en) * 2006-12-19 2012-07-17 Applied Materials, Inc. Non-contact process kit
KR20150136142A (ko) * 2008-04-16 2015-12-04 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
US9799497B2 (en) * 2013-08-16 2017-10-24 Taiwan Semiconductor Manufacturing Company Limited Patterned processing kits for material processing
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CN101563560A (zh) * 2006-12-19 2009-10-21 应用材料公司 非接触式处理套件

Also Published As

Publication number Publication date
TWI713543B (zh) 2020-12-21
TW201708588A (zh) 2017-03-01
KR20180016628A (ko) 2018-02-14
CN107787377A (zh) 2018-03-09
US20170002461A1 (en) 2017-01-05
CN109321890A (zh) 2019-02-12
JP7289890B2 (ja) 2023-06-12
TW202124746A (zh) 2021-07-01
JP2022022225A (ja) 2022-02-03
CN117867462A (zh) 2024-04-12
KR102709082B1 (ko) 2024-09-23
SG10202108705SA (en) 2021-09-29
JP6976925B2 (ja) 2021-12-08
JP2018519426A (ja) 2018-07-19
US9909206B2 (en) 2018-03-06
WO2017007729A1 (en) 2017-01-12

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