JP6976925B2 - 背高の堆積リングと堆積リングクランプとを有するプロセスキット - Google Patents

背高の堆積リングと堆積リングクランプとを有するプロセスキット Download PDF

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Publication number
JP6976925B2
JP6976925B2 JP2018500317A JP2018500317A JP6976925B2 JP 6976925 B2 JP6976925 B2 JP 6976925B2 JP 2018500317 A JP2018500317 A JP 2018500317A JP 2018500317 A JP2018500317 A JP 2018500317A JP 6976925 B2 JP6976925 B2 JP 6976925B2
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Japan
Prior art keywords
ring
process kit
substrate support
extending
deposit
Prior art date
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JP2018500317A
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English (en)
Japanese (ja)
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JP2018519426A5 (enExample
JP2018519426A (ja
Inventor
ウィリアム ジョハンソン
キランクマール サヴァンダイア
アドルフ ミラー アレン
シン ワン
プラシャント プラブ
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2018519426A publication Critical patent/JP2018519426A/ja
Publication of JP2018519426A5 publication Critical patent/JP2018519426A5/ja
Priority to JP2021183138A priority Critical patent/JP7289890B2/ja
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Publication of JP6976925B2 publication Critical patent/JP6976925B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Clamps And Clips (AREA)
  • Chemical Vapour Deposition (AREA)
  • General Chemical & Material Sciences (AREA)
JP2018500317A 2015-07-03 2016-07-01 背高の堆積リングと堆積リングクランプとを有するプロセスキット Active JP6976925B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021183138A JP7289890B2 (ja) 2015-07-03 2021-11-10 背高の堆積リングと堆積リングクランプとを有するプロセスキット

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IN2029/DEL/2015 2015-07-03
IN2029DE2015 2015-07-03
US15/201,019 2016-07-01
PCT/US2016/040847 WO2017007729A1 (en) 2015-07-03 2016-07-01 Process kit having tall deposition ring and deposition ring clamp
US15/201,019 US9909206B2 (en) 2015-07-03 2016-07-01 Process kit having tall deposition ring and deposition ring clamp

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021183138A Division JP7289890B2 (ja) 2015-07-03 2021-11-10 背高の堆積リングと堆積リングクランプとを有するプロセスキット

Publications (3)

Publication Number Publication Date
JP2018519426A JP2018519426A (ja) 2018-07-19
JP2018519426A5 JP2018519426A5 (enExample) 2019-08-08
JP6976925B2 true JP6976925B2 (ja) 2021-12-08

Family

ID=57683629

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2018500317A Active JP6976925B2 (ja) 2015-07-03 2016-07-01 背高の堆積リングと堆積リングクランプとを有するプロセスキット
JP2021183138A Active JP7289890B2 (ja) 2015-07-03 2021-11-10 背高の堆積リングと堆積リングクランプとを有するプロセスキット

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021183138A Active JP7289890B2 (ja) 2015-07-03 2021-11-10 背高の堆積リングと堆積リングクランプとを有するプロセスキット

Country Status (7)

Country Link
US (1) US9909206B2 (enExample)
JP (2) JP6976925B2 (enExample)
KR (1) KR102709082B1 (enExample)
CN (3) CN117867462A (enExample)
SG (1) SG10202108705SA (enExample)
TW (2) TWI713543B (enExample)
WO (1) WO2017007729A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI653885B (zh) * 2017-03-03 2019-03-11 宏碁股份有限公司 影像輸出方法及影像擷取裝置
JPWO2019053869A1 (ja) * 2017-09-15 2020-10-01 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
US11056325B2 (en) 2017-12-20 2021-07-06 Applied Materials, Inc. Methods and apparatus for substrate edge uniformity
CN110468377B (zh) * 2018-05-11 2022-04-22 北京北方华创微电子装备有限公司 腔室及半导体加工设备
JP7093850B2 (ja) * 2018-12-03 2022-06-30 株式会社アルバック 成膜装置及び成膜方法
US11961723B2 (en) * 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
USD888903S1 (en) 2018-12-17 2020-06-30 Applied Materials, Inc. Deposition ring for physical vapor deposition chamber
US11361982B2 (en) * 2019-12-10 2022-06-14 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of electrostatic chucks
CN111235535B (zh) * 2020-01-22 2021-11-16 北京北方华创微电子装备有限公司 一种溅射反应腔室的工艺组件及其溅射反应腔室
US11935728B2 (en) * 2020-01-31 2024-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of manufacturing a semiconductor device
US11339466B2 (en) * 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
USD934315S1 (en) 2020-03-20 2021-10-26 Applied Materials, Inc. Deposition ring for a substrate processing chamber
USD941372S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
USD941371S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
US11380575B2 (en) 2020-07-27 2022-07-05 Applied Materials, Inc. Film thickness uniformity improvement using edge ring and bias electrode geometry
USD1034491S1 (en) 2020-07-27 2024-07-09 Applied Materials, Inc. Edge ring
JP7223738B2 (ja) 2020-11-12 2023-02-16 株式会社アルバック スパッタリング装置
US11670493B2 (en) * 2020-11-13 2023-06-06 Applied Materials, Inc. Isolator ring clamp and physical vapor deposition chamber incorporating same
US11581167B2 (en) 2021-06-18 2023-02-14 Applied Materials, Inc. Process kit having tall deposition ring and smaller diameter electrostatic chuck (ESC) for PVD chamber
US11915918B2 (en) 2021-06-29 2024-02-27 Applied Materials, Inc. Cleaning of sin with CCP plasma or RPS clean
US12183559B2 (en) 2021-10-22 2024-12-31 Applied Materials, Inc. Apparatus for temperature control in a substrate processing chamber
USD1059312S1 (en) * 2022-08-04 2025-01-28 Applied Materials, Inc. Deposition ring of a process kit for semiconductor substrate processing
USD1069863S1 (en) 2022-08-04 2025-04-08 Applied Materials, Inc. Deposition ring of a process kit for semiconductor substrate processing
USD1064005S1 (en) 2022-08-04 2025-02-25 Applied Materials, Inc. Grounding ring of a process kit for semiconductor substrate processing
US20240068086A1 (en) * 2022-08-29 2024-02-29 Applied Materials, Inc. Physical Vapor Deposition (PVD) Chamber Titanium-Tungsten (TiW) Target For Particle Improvement
CN119968474A (zh) * 2022-10-05 2025-05-09 应用材料公司 用于基板的掩模、基板支撑件、基板处理设备、用于在基板上进行层沉积的方法和制造一个或多个装置的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US7670436B2 (en) * 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US7520969B2 (en) 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
SG177902A1 (en) * 2006-12-19 2012-02-28 Applied Materials Inc Non-contact process kit
US8221602B2 (en) * 2006-12-19 2012-07-17 Applied Materials, Inc. Non-contact process kit
KR101571558B1 (ko) 2008-04-16 2015-11-24 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
US9799497B2 (en) * 2013-08-16 2017-10-24 Taiwan Semiconductor Manufacturing Company Limited Patterned processing kits for material processing
US10546733B2 (en) 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield

Also Published As

Publication number Publication date
TWI770678B (zh) 2022-07-11
JP2022022225A (ja) 2022-02-03
SG10202108705SA (en) 2021-09-29
CN107787377A (zh) 2018-03-09
JP7289890B2 (ja) 2023-06-12
TW201708588A (zh) 2017-03-01
JP2018519426A (ja) 2018-07-19
TWI713543B (zh) 2020-12-21
TW202124746A (zh) 2021-07-01
CN117867462A (zh) 2024-04-12
WO2017007729A1 (en) 2017-01-12
KR20180016628A (ko) 2018-02-14
CN109321890A (zh) 2019-02-12
KR102709082B1 (ko) 2024-09-23
US20170002461A1 (en) 2017-01-05
US9909206B2 (en) 2018-03-06

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