TWI766997B - Vacuum drying device and vacuum drying method - Google Patents

Vacuum drying device and vacuum drying method Download PDF

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TWI766997B
TWI766997B TW107116715A TW107116715A TWI766997B TW I766997 B TWI766997 B TW I766997B TW 107116715 A TW107116715 A TW 107116715A TW 107116715 A TW107116715 A TW 107116715A TW I766997 B TWI766997 B TW I766997B
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solvent
exhaust
chamber
substrate
trapping
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TW201907132A (en
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島村明典
林輝幸
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日商東京威力科創股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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Abstract

提供一種直至基板之減壓乾燥完成為止的時間 較短之減壓乾燥裝置。 Provide a time until the vacuum drying of the substrate is completed Shorter vacuum drying device.

減壓乾燥裝置(1),係在減壓狀態下,使被 塗佈於基板(W)之表面的有機材料膜中之溶媒乾燥者,該減壓乾燥裝置,係具備有:腔室(10),收容基板;及複數個排氣管(30),連接腔室(10)內之空間與對腔室(10)內進行排氣的排氣裝置(P),複數個排氣管(30),係分別具有開關自如地封閉該排氣管(30)之APC閥(31),複數個排氣管(30),係包含有:有溶媒捕集部之排氣管(30),在APC閥(31)之下游,設置有捕集從基板(W)氣化的溶液中之溶媒的溶媒捕集部(32);及無溶媒捕集部之排氣管(30),未設置有溶媒捕集部(21)。 The vacuum drying device (1) is in a reduced pressure state, so that the For drying the solvent in the organic material film coated on the surface of the substrate (W), the vacuum drying device is provided with: a chamber (10) for accommodating the substrate; and a plurality of exhaust pipes (30) for connecting the chambers The space in the chamber (10) and the exhaust device (P) for exhausting the inside of the chamber (10), a plurality of exhaust pipes (30) are respectively provided with a switch to freely close the exhaust pipe (30). APC valve (31), a plurality of exhaust pipes (30), including: an exhaust pipe (30) with a solvent trapping part, downstream of the APC valve (31), a trapping slave substrate (W) is provided The solvent trapping part (32) of the solvent in the vaporized solution; and the exhaust pipe (30) without the solvent trapping part are not provided with the solvent trapping part (21).

Description

減壓乾燥裝置及減壓乾燥方法 Vacuum drying device and vacuum drying method

本發明,係關於一種減壓乾燥裝置,其在減壓狀態下,使被塗佈於基板之表面的有機材料膜中之溶媒乾燥。 The present invention relates to a vacuum drying apparatus for drying a solvent in an organic material film coated on a surface of a substrate in a reduced pressure state.

以往,已知有利用有機EL(Electroluminescence)之發光的發光二極體即有機發光二極體(OLED:Organic Light Emitting Diode)。使用了該有機發光二極體之有機EL顯示器,係除了薄型輕量且低消費電力以外,具有響應速度或視角、對比方面優異這樣的優點,因此,近年來,作為次世代之平板顯示器(FPD)備受矚目。 Conventionally, Organic Light Emitting Diode (OLED: Organic Light Emitting Diode), which is a light emitting diode utilizing light emission of organic EL (Electroluminescence), has been known. The organic EL display using this organic light emitting diode has the advantages of being thin, lightweight, and low in power consumption, as well as being excellent in response speed, viewing angle, and contrast. ) has attracted much attention.

有機發光二極體,係具有在基板上的陽極與陰極之間隔著有機EL層的構造。有機EL層,係例如從陽極側依序積層電洞注入層、電洞輸送層、發光層、電子輸送層及電子注入層而形成。在形成該些有機EL層的各層(特別是電洞注入層、電洞輸送層及發光層)之際,係例如可使用以噴墨方式對基板上吐出有機材料之液滴這樣的方法。 The organic light-emitting diode has a structure in which an organic EL layer is interposed between an anode and a cathode on a substrate. The organic EL layer is formed by laminating, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in this order from the anode side. When forming each of these organic EL layers (particularly, the hole injection layer, the hole transport layer, and the light emitting layer), a method of discharging droplets of an organic material onto a substrate by an inkjet method can be used, for example.

在以噴墨方式被吐出至基板上的有機材料中,係含有多量的溶媒。因此,以去除溶媒為目的,在減壓狀態下,進行使該溶媒乾燥的減壓乾燥處理。 The organic material discharged onto the substrate by the ink jet method contains a large amount of solvent. Therefore, for the purpose of removing the solvent, a drying treatment under reduced pressure for drying the solvent is performed in a reduced pressure state.

用以進行減壓乾燥處理之減壓乾燥裝置,係具備有:處理容器,收容減壓乾燥對象之基板,且可進行抽真空;及排氣管,一端被連接於處理容器,另一端被設置為排氣裝置,並藉由排氣裝置,對處理容器內進行排氣(參閱專利文獻1、2)。 A vacuum drying apparatus for performing a vacuum drying process is provided with: a processing container that accommodates a substrate to be dried under reduced pressure and can be evacuated; and an exhaust pipe, one end of which is connected to the processing container, and the other end is provided with It is an exhaust device, and the inside of the processing container is exhausted by the exhaust device (refer to Patent Documents 1 and 2).

專利文獻1之減壓乾燥裝置,係以使基板快速地乾燥等為目的,在排氣管設置有捕集從基板上的有機材料膜揮發之溶媒的溶媒捕集部,若基板之減壓乾燥結束時,則關閉被設置於溶媒捕集部與處理容器之間的閥,使處理容器內回到大氣壓而從處理容器內搬出基板。 The reduced-pressure drying apparatus of Patent Document 1 is intended to rapidly dry the substrate, etc., and the exhaust pipe is provided with a solvent collecting part for collecting the solvent volatilized from the organic material film on the substrate. If the substrate is dried under reduced pressure When it is completed, the valve provided between the solvent trapping part and the processing container is closed, the inside of the processing container is returned to the atmospheric pressure, and the substrate is unloaded from the processing container.

又,專利文獻2之減壓乾燥裝置,係為了在短時間內效率良好地去除處理容器內之溶媒,而在處理容器內設置上述溶媒捕集部,並且對於處理容器設置紫外線照射部。該減壓乾燥裝置,係從紫外線照射部對溶媒捕集部照射紫外線,以使被該溶媒捕集部捕集的溶媒中所含有之有機化合物容易揮發的方式,進行分解。 In addition, in the vacuum drying apparatus of Patent Document 2, in order to efficiently remove the solvent in the processing container in a short time, the above-mentioned solvent trapping part is provided in the processing container, and an ultraviolet irradiation part is provided for the processing container. This vacuum drying apparatus decomposes by irradiating ultraviolet rays from the ultraviolet irradiation part to the solvent trapping part so as to easily volatilize the organic compounds contained in the solvent trapped by the solvent trapping part.

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2005-85814號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2005-85814

[專利文獻2]日本特開2014-238194號公報[Patent Document 2] Japanese Patent Laid-Open No. 2014-238194

[本發明所欲解決之課題][Problems to be Solved by the Invention]

然而,有時被要求使直至基板之減壓乾燥完成為止的時間,換言之,直至處理容器內之壓力成為預定值以下且即便處理容器內回到大氣壓亦不會產生問題為止的時間(節拍時間)比專利文獻1及2之減壓乾燥裝置更縮短。However, it is sometimes required that the time until the drying of the substrate under reduced pressure is completed, in other words, the time until the pressure in the processing chamber becomes below a predetermined value and no problem occurs even if the pressure in the processing chamber returns to the atmosphere (takt time) It is shorter than the vacuum drying apparatus of Patent Documents 1 and 2.

本發明,係有鑑於該點而進行研究者,以提供一種直至基板之減壓乾燥完成為止的時間較短之減壓乾燥裝置為目的。 [用以解決課題之手段]The present invention has been made in view of this point, and an object of the present invention is to provide a reduced-pressure drying apparatus with a short time until the reduced-pressure drying of the substrate is completed. [means to solve the problem]

為了達成前述之目的,本發明,係一種減壓乾燥裝置,其在減壓狀態下,使被塗佈於基板之表面的有機材料膜中之溶媒乾燥,該減壓乾燥裝置,其特徵係,具備有:腔室,收容前述基板;及複數個排氣路徑,連接該腔室內之空間與對前述腔室內進行排氣的排氣裝置,前述複數個排氣路徑,係分別具有開關自如地封閉該排氣路徑之封閉構件,前述複數個排氣路徑,係包含有:有溶媒捕集部之排氣路徑,在前述封閉構件之下游,設置有捕集從前述基板氣化的前述溶液中之溶媒的溶媒捕集部;及無溶媒捕集部之排氣路徑,未設置有前述溶媒捕集部。In order to achieve the aforementioned object, the present invention relates to a vacuum drying device, which dries the solvent in the organic material film coated on the surface of the substrate under reduced pressure. The vacuum drying device is characterized by: It is provided with: a chamber for accommodating the substrate; and a plurality of exhaust paths connecting the space in the chamber and an exhaust device for exhausting the inside of the chamber, and the plurality of exhaust paths are respectively provided with switches and can be closed freely. The closing member of the exhaust passage, the plurality of exhaust passages, includes an exhaust passage having a solvent trapping portion, and downstream of the closing member, is provided with an exhaust passage that collects the solution vaporized from the substrate. The solvent collection part of the solvent and the exhaust path without the solvent collection part are not provided with the solvent collection part.

前述有溶媒捕集部之排氣路徑的前述腔室側之端部,係比起前述無溶媒捕集部之排氣路徑的前述腔室側之端部,更遠離被收容於前述腔室之前述基板的角部為較佳。The end portion on the chamber side of the exhaust path with the solvent trap portion is farther from the chamber accommodated in the chamber than the end portion on the chamber side of the exhaust path without the solvent trap portion. The corners of the aforementioned substrates are preferred.

具備有溫度可變機構為較佳,該溫度可變機構,係冷卻及/或加熱前述溶媒捕集部。Preferably, a temperature variable mechanism is provided for cooling and/or heating the solvent trapping portion.

在前述溶媒捕集部與前述封閉構件之間具備有氣體供給部為較佳,該氣體供給部,係供給促進被該溶媒捕集部捕集之溶媒之氣化的氣體。Preferably, between the solvent trapping portion and the closing member, a gas supply portion for supplying a gas that promotes the vaporization of the solvent trapped by the solvent trapping portion is provided.

根據另一觀點之本發明,一種減壓乾燥方法,係使用了減壓乾燥裝置,該減壓乾燥裝置,係在減壓狀態下,使被塗佈於基板之表面的有機材料膜中之溶媒乾燥,該減壓乾燥方法,其特徵係,前述減壓乾燥裝置,係具備有:腔室,收容前述基板;及複數個排氣路徑,連接該腔室內之空間與對前述腔室內進行排氣的排氣裝置,前述複數個排氣路徑,係分別具有開關自如地封閉該排氣路徑之封閉構件,前述複數個排氣路徑,係包含有:有溶媒捕集部之排氣路徑,在前述封閉構件之下游,設置有捕集從前述基板氣化的前述溶液中之溶媒的溶媒捕集部;及無溶媒捕集部之排氣路徑,未設置有前述溶媒捕集部,該減壓乾燥方法,係包含有:基板乾燥步驟,對於前述複數個排氣路徑中之至少前述有溶媒捕集部之排氣路徑,使前述封閉構件成為開啟狀態;及腔室乾燥步驟,在該基板乾燥步驟後,對於前述複數個排氣路徑中之前述有溶媒捕集部之排氣路徑,使前述封閉構件成為關閉狀態,對於前述無溶媒捕集部之排氣路徑,使前述封閉構件成為開啟狀態。According to another aspect of the present invention, there is provided a method of drying under reduced pressure using a vacuum drying device that, under reduced pressure, causes a solvent in an organic material film to be coated on the surface of a substrate to be Drying, the vacuum drying method is characterized in that the vacuum drying device is provided with: a chamber for accommodating the substrate; and a plurality of exhaust paths for connecting the space in the chamber and exhausting the chamber The exhaust device of the invention, the plurality of exhaust paths are respectively provided with a closing member that can open and close the exhaust path, and the plurality of exhaust paths include: an exhaust path with a solvent trapping portion, and the exhaust path has a solvent trap. On the downstream side of the sealing member, a solvent trapping part for trapping the solvent in the solution vaporized from the substrate is provided; and an exhaust path without a solvent trapping part is provided without the solvent trapping part, and the drying under reduced pressure The method includes: a substrate drying step of opening the closing member for at least the exhaust path having the solvent trap part among the plurality of exhaust paths; and a chamber drying step, in which the substrate drying step Then, the closing member is closed for the exhaust passage with the solvent trapping portion among the plurality of exhaust passages, and the closing member is opened for the exhaust passage without the solvent trapping portion.

前述基板乾燥步驟,係包含有冷卻前述溶媒捕集部的步驟為較佳。Preferably, the substrate drying step includes a step of cooling the solvent trapping portion.

前述腔室乾燥步驟,係包含有加熱前述溶媒捕集部的步驟為較佳。Preferably, the chamber drying step includes a step of heating the solvent trapping part.

前述腔室乾燥步驟,係包含有如下述之步驟為較佳:從被設置於前述封閉構件與前述溶媒捕集部之間的氣體供給部,供給促進被該溶媒捕集部捕集的溶媒之氣化的氣體。Preferably, the chamber drying step includes the following step: from a gas supply part provided between the closing member and the solvent trapping part, a gas supplying part for promoting the trapping of the solvent by the solvent trapping part is supplied. vaporized gas.

前述有溶媒捕集部之排氣路徑的前述腔室側之端部,係比起前述無溶媒捕集部之排氣路徑的前述腔室側之端部,更遠離被收容於前述腔室之前述基板的角部,前述基板乾燥步驟,係包含有如下述步驟為較佳:對於前述複數個排氣路徑中之前述有溶媒捕集部之排氣路徑,使前述封閉構件成為開啟狀態,其後,對於所有的前述複數個排氣路徑,使前述封閉構件成為開啟狀態。 [發明之效果]The end portion on the chamber side of the exhaust path with the solvent trap portion is farther from the chamber accommodated in the chamber than the end portion on the chamber side of the exhaust path without the solvent trap portion. Preferably, the corner portion of the substrate, the substrate drying step, preferably includes the following step: for the exhaust path having the solvent trap portion among the plurality of exhaust paths, the closing member is in an open state, which After that, for all of the plurality of exhaust paths, the closing member is brought into an open state. [Effect of invention]

根據本發明,可縮短直至基板之減壓乾燥完成為止的時間亦即節拍時間(tact time)。According to the present invention, the time until drying of the substrate under reduced pressure, that is, the tact time can be shortened.

以下,參閱附加圖面,說明關於本發明之實施形態。另外,在本說明書及圖面中,對於具有實質相同功能構成的構成要素,係賦予相同符號而省略重複說明。又,並非藉由以下所示之實施形態來加以限定該發明。Hereinafter, referring to the attached drawings, embodiments of the present invention will be described. In addition, in this specification and drawings, the same code|symbol is attached|subjected to the component which has substantially the same functional structure, and the repeated description is abbreviate|omitted. In addition, this invention is not limited by the embodiment shown below.

(第1實施形態)   圖1,係表示本發明之實施形態之減壓乾燥裝置之概略構成的圖;圖1(A),係表示減壓乾燥裝置之構成之概略的示意剖面圖;圖1(B),係表示減壓乾燥裝置內之構成之概略的示意上視圖。另外,在圖1(B),係省略後述之頂板等的圖示。(First Embodiment) Fig. 1 is a diagram showing the schematic structure of a vacuum drying apparatus according to an embodiment of the present invention; Fig. 1(A) is a schematic cross-sectional view showing the schematic structure of the vacuum drying apparatus; Fig. 1 (B) is a schematic top view showing the outline of the structure in the vacuum drying apparatus. In addition, in FIG.1(B), illustration of the ceiling etc. which are mentioned later is abbreviate|omitted.

本實施形態之減壓乾燥裝置,係在減壓狀態下,使以噴墨方式被塗佈於基板之表面的有機材料膜中之溶媒乾燥者,本裝置之處理對象基板的基板,係例如有機EL顯示器用之玻璃基板。   另外,塗佈於本裝置之處理對象的基板之溶液,係由溶質與溶媒所構成,成為減壓乾燥處理之對象的成分,係主要為溶媒。作為溶媒所含有之有機化合物,係大多為高沸點者,例如可列舉出1,3-二甲基-2-四氫咪唑酮(1,3-dimethyl-2-imidazolidinone、沸點220℃、熔點8℃)、4-tert-丁基苯甲醚(4-tert-Butylanisole、沸點222℃、熔點18℃)、Trans-茴香腦(Trans-Anethole、沸點235℃、熔點20℃)、1,2-二甲氧苯(1,2-Dimethoxybenzene、沸點206.7℃、熔點22.5℃)、2-甲氧基聯苯(2-Methoxybiphenyl、沸點274℃、熔點28℃)、二苯醚(Phenyl Ether、沸點258.3℃、熔點28℃)、2-乙氧基萘(2-Ethoxynaphthalene、沸點282℃、熔點35℃)、苄基苯基醚(Benzyl Phenyl Ether、沸點288℃、熔點39℃)、2,6-二甲氧基甲苯(2,6-Dimethoxytoluene、沸點222℃、熔點39℃)、2-丙氧基萘(2-Propoxynaphthalene、沸點305℃、熔點40℃)、1,2,3-三甲氧基苯(1,2,3-Trimethoxybenzene、沸點235℃、熔點45℃)、環己苯(cyclohexylbenzene、沸點237.5℃、熔點5℃)、十二烷基苯(dodecylbenzene、沸點288℃、熔點-7℃)、1,2,3,4-四甲基苯(1,2,3,4-tetramethylbenzene、沸點203℃、熔點76℃)等。該些高沸點有機化合物,係亦有將2種以上組合而混合於溶液中的情況。The vacuum drying device of this embodiment is a device that dries the solvent in the organic material film coated on the surface of the substrate by the inkjet method under the reduced pressure state. Glass substrates for EL displays. In addition, the solution applied to the substrate to be processed by this device is composed of a solute and a solvent, and the component to be dried under reduced pressure is mainly a solvent. Most of the organic compounds contained in the solvent have a high boiling point, for example, 1,3-dimethyl-2-imidazolidinone (1,3-dimethyl-2-imidazolidinone, boiling point 220°C, melting point 8 ℃), 4-tert-butylanisole (4-tert-Butylanisole, boiling point 222℃, melting point 18℃), Trans-Anethole (Trans-Anethole, boiling point 235℃, melting point 20℃), 1,2- Dimethoxybenzene (1,2-Dimethoxybenzene, boiling point 206.7°C, melting point 22.5°C), 2-Methoxybiphenyl (2-Methoxybiphenyl, boiling point 274°C, melting point 28°C), diphenyl ether (Phenyl Ether, boiling point 258.3 ℃, melting point 28℃), 2-ethoxynaphthalene (2-Ethoxynaphthalene, boiling point 282℃, melting point 35℃), Benzyl Phenyl Ether (boiling point 288℃, melting point 39℃), 2,6- Dimethoxytoluene (2,6-Dimethoxytoluene, boiling point 222°C, melting point 39°C), 2-propoxynaphthalene (2-Propoxynaphthalene, boiling point 305°C, melting point 40°C), 1,2,3-trimethoxy Benzene (1,2,3-Trimethoxybenzene, boiling point 235°C, melting point 45°C), cyclohexylbenzene (boiling point 237.5°C, melting point 5°C), dodecylbenzene (dodecylbenzene, boiling point 288°C, melting point -7°C) ), 1,2,3,4-tetramethylbenzene (1,2,3,4-tetramethylbenzene, boiling point 203°C, melting point 76°C), etc. These high boiling point organic compounds may be mixed in a solution in combination of two or more.

本實施形態之減壓乾燥裝置,係如圖1(A)及圖1(B)所示般,具備有腔室10、載置台20及複數個排氣管30,並被連接於排氣裝置P。The decompression drying apparatus of the present embodiment, as shown in FIGS. 1(A) and 1(B) , includes a chamber 10, a mounting table 20, and a plurality of exhaust pipes 30, and is connected to the exhaust device P.

腔室10,係被構成為氣密者,由不銹鋼等的金屬材料所形成。腔室10,係具有:角筒狀之本體部11;頂板12,被安裝於本體部11之上側;及底板13,被安裝於本體部11之下側。The chamber 10 is configured to be airtight, and is formed of a metal material such as stainless steel. The chamber 10 has: a main body part 11 in the shape of a square cylinder; a top plate 12 is mounted on the upper side of the main body part 11 ;

本體部11,係設置有用以將基板W搬入搬出至腔室10內之未圖示的搬入搬出口。   頂板12,係封閉本體部11之上側的開口者。The main body portion 11 is provided with a not-shown import and export port for carrying the substrate W in and out of the chamber 10 . The top plate 12 closes the opening on the upper side of the main body 11.

底板13,係封閉本體部11之下側的開口者,在底板13之上側的中央,係配設有載置台20。又,在底板13,以包圍載置台20之外周的方式,設置有複數個開口13a、13b。在本例中,開口13a、13b,係沿著載置台20之一邊設置有6個,且沿著與上述一邊對向的邊設置有6個,合計12個。   又,分別相對於開口13a連通有排氣管30。The bottom plate 13 closes the opening on the lower side of the main body portion 11 , and a mounting table 20 is arranged in the center of the upper side of the bottom plate 13 . In addition, the bottom plate 13 is provided with a plurality of openings 13a and 13b so as to surround the outer periphery of the mounting table 20 . In this example, six openings 13a and 13b are provided along one side of the mounting table 20, and six are provided along the side opposite to the above-mentioned side, for a total of 12 openings. In addition, the exhaust pipes 30 communicate with the openings 13a, respectively.

載置台20,係載置基板W者。在載置台20,係設置有進行基板W的收授之未圖示的升降銷,該升降銷,係可藉由升降機構上下自由移動。The mounting table 20 is for mounting the substrate W thereon. The mounting table 20 is provided with lift pins (not shown) for receiving and delivering the substrates W, and the lift pins can be freely moved up and down by a lift mechanism.

複數個排氣管30,係分別連接腔室10與排氣裝置P者。藉由排氣管30與底板13之開口13a、13b,構成本發明之「排氣路徑」。另外,排氣路徑,係連接腔室10內之基板收容空間與排氣裝置P者。在減壓乾燥裝置1中,係經由構成上述「排氣路徑」之排氣管30及開口13a、13b,藉由排氣裝置P對腔室10內進行減壓。A plurality of exhaust pipes 30 are connected to the chamber 10 and the exhaust device P, respectively. The "exhaust path" of the present invention is constituted by the exhaust pipe 30 and the openings 13a and 13b of the bottom plate 13 . In addition, the exhaust path is the one connecting the substrate accommodating space and the exhaust device P in the chamber 10 . In the decompression drying apparatus 1, the inside of the chamber 10 is decompressed by the exhaust device P through the exhaust pipe 30 and the openings 13a and 13b constituting the above-mentioned "exhaust path".

另外,排氣裝置P,係由真空泵所構成,具體而言,係將渦輪分子泵與乾式泵例如從上游側依序串聯連接而構成。該排氣裝置P,係相對於各排氣路徑,具體而言相對於排氣管30各配設1個。In addition, the exhaust device P is constituted by a vacuum pump, specifically, a turbomolecular pump and a dry pump are connected in series in this order from the upstream side, for example. This exhaust device P is provided for each exhaust path, specifically, one for each of the exhaust pipes 30 .

又,排氣管30,係分別具有作為開關自如地封閉該排氣管30之封閉構件的自動壓力控制閥(APC(Adaptive Pressure Control)閥)31。換言之,在排氣管30的開口13a、13b與排氣裝置P之間的部分,係設置有APC閥31。在減壓乾燥裝置1中,係在使排氣裝置P作動的狀態下,調節APC閥31之開合度,藉此,可控制減壓排氣之際之腔室10內的真空度/壓力,並控制基板W的乾燥速度。In addition, the exhaust pipes 30 each have an automatic pressure control valve (APC (Adaptive Pressure Control) valve) 31 as a closing member for closing the exhaust pipe 30 freely. In other words, the APC valve 31 is provided in the portion between the openings 13a and 13b of the exhaust pipe 30 and the exhaust device P. As shown in FIG. In the decompression drying apparatus 1, the degree of opening and closing of the APC valve 31 is adjusted while the exhaust device P is activated, whereby the degree of vacuum/pressure in the chamber 10 during decompression and exhaustion can be controlled, And the drying speed of the substrate W is controlled.

另外,減壓乾燥裝置1,係具有測定腔室10內的壓力之未圖示的壓力計。該壓力計之計測結果,係作為電性信號被輸入至APC閥31或後述的控制部40。In addition, the decompression drying apparatus 1 is provided with the pressure gauge which is not shown in figure which measures the pressure in the chamber 10. The measurement result of this pressure gauge is input to the APC valve 31 or the control part 40 mentioned later as an electrical signal.

而且,僅複數個排氣管30中之一部分,在APC閥31之下游具有溶媒捕集部32,該溶媒捕集部32,係捕集從藉由噴墨方式被塗佈於基板W上之溶媒氣化的溶媒。具體而言,在對於複數個排氣管30中之接近載置台20上之基板W的角部之開口13a所設置的排氣管30,係不設置溶媒捕集部32,在對於遠離上述角部之開口13b所設置的排氣管30,係設置有溶媒捕集部32。Further, only a part of the plurality of exhaust pipes 30 has a solvent trapping portion 32 downstream of the APC valve 31, and the solvent trapping portion 32 traps the solvent trapped on the substrate W by the inkjet method. The solvent in which the solvent is vaporized. Specifically, the exhaust pipe 30 provided with respect to the opening 13a of the corner portion of the substrate W on the mounting table 20 among the plurality of exhaust pipes 30 is not provided with the solvent trapping portion 32, and the exhaust pipe 30 is not provided with the solvent trapping portion 32 for the exhaust pipe 30 far from the above-mentioned corner. The exhaust pipe 30 provided in the opening 13b of the part is provided with a solvent trapping part 32 .

亦即,複數個排氣路徑,係包含有:有溶媒捕集部之排氣路徑,在APC閥31之下游,設置有溶媒捕集部32;及無溶媒捕集部之排氣路徑,未設置有溶媒捕集部32。又,有溶媒捕集部之排氣路徑之腔室10側的端部亦即開口13a,係比起無溶媒捕集部之排氣路徑10側的端部亦即開口13b,更遠離被收容於腔室10內並載置於載置台20上之晶圓W的角部。That is, the plurality of exhaust paths include: an exhaust path with a solvent trap part, downstream of the APC valve 31, a solvent trap part 32 is provided; and an exhaust path without a solvent trap part, not The solvent collection part 32 is provided. In addition, the opening 13a, which is the end on the side of the chamber 10 with the exhaust path with the solvent trapping portion, is farther away from the opening 13b than the opening 13b, which is the end on the exhaust path 10 side without the solvent trapping portion. The corner portion of the wafer W placed on the mounting table 20 in the chamber 10 .

溶媒捕集部32,係具有開口被均勻地形成為格子狀之形狀的薄板亦即網狀板(未圖示),以便可一面使從腔室10內所排出之氣體通過,一面捕集氣體中之溶媒。上述網狀板,係由不銹鋼或鋁、銅、金這樣的金屬材料所形成,例如藉由對鋼板進行冷切割(cold cut)所製造的展成金屬(expand metal)所構成。   溶媒捕集部32所具有之網狀板,係亦可為1片,或亦可層積複數片。又,網狀板,係被形成為其外徑與排氣管30之內徑大致相等。The solvent trapping portion 32 has a mesh plate (not shown), which is a thin plate whose openings are uniformly formed in a lattice shape, so as to allow the gas discharged from the chamber 10 to pass therethrough while trapping the gas. the solvent. The above-mentioned mesh plate is formed of stainless steel or metal materials such as aluminum, copper, and gold, and is formed of expanded metal produced by cold cutting a steel plate, for example. The mesh plate included in the solvent trapping unit 32 may be one sheet, or a plurality of sheets may be laminated. In addition, the mesh plate is formed so that the outer diameter thereof is substantially equal to the inner diameter of the exhaust pipe 30 .

具有以上之各部的減壓乾燥裝置1,係更具備有:控制部40,控制APC閥31等。控制部40,係例如電腦,具有程式儲存部(未圖示)。在程式儲存部,係儲存有控制減壓乾燥裝置1中之減壓乾燥處理的程式。另外,前述程式,係例如亦可為被記錄於電腦可讀取之硬碟(HD)、軟碟片(FD)、光碟(CD)、磁光碟(MO)、記憶卡等的電腦可讀取之記憶媒體者,且亦可為從該記憶媒體安裝於控制部40者。   該控制部40,係亦可進行排氣裝置P之控制。The reduced-pressure drying apparatus 1 having the above-mentioned parts is further provided with the control part 40, the control APC valve 31, and the like. The control unit 40 is, for example, a computer, and has a program storage unit (not shown). In the program storage unit, a program for controlling the vacuum drying process in the vacuum drying apparatus 1 is stored. In addition, the aforementioned program can be recorded on a computer-readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, etc. that can be read by a computer, for example. The storage medium may be installed in the control unit 40 from the storage medium. The control unit 40 can also control the exhaust device P.

接著,說明關於使用了減壓乾燥裝置1之減壓乾燥處理。Next, the vacuum drying process using the vacuum drying apparatus 1 will be described.

(基板搬入步驟)   在使用了減壓乾燥裝置1之減壓乾燥處理中,係首先,將以噴墨方式塗佈了處理液的基板W載置於載置台20。(Substrate carrying step) In the vacuum drying process using the vacuum drying apparatus 1, first, the substrate W to which the processing liquid has been applied by the ink jet method is placed on the mounting table 20.

(基板乾燥步驟)   其次,在使排氣裝置P之乾式泵作動的狀態下,對於複數個排氣管30中之至少設置有溶媒捕集部32的排氣管30(以下,有溶媒捕集部之排氣管30),在本例中,係對於所有的排氣管30,使APC閥31成為開啟狀態,開始腔室10內的減壓排氣。乾式泵所致之減壓排氣,係進行直至腔室10內之壓力成為例如10Pa為止。   其後,使排氣裝置P之渦輪分子泵作動,而進一步進行減壓排氣。   藉由更進一步減壓排氣,若腔室10內之壓力成為基板W的溫度中之溶媒的蒸氣壓以下(基板W之溫度為23℃的情況下,0.2Pa以下)時,則基板W上之溶媒S的蒸發速度變大。   又,在減壓排氣之際,腔室10內之氣體被絕熱膨脹並冷卻,藉由像這樣經冷卻之腔室10內的氣體,溶媒捕集部32之溫度下降。具體而言,係在腔室10內之壓力被減壓至0.2Pa的時點,溶媒捕集部32,係被冷卻至5~12℃。該5~12℃,係小於0.2Pa中之溶媒的露點即23℃。   又,溶媒捕集部32之溫度,係在直至基板W上之溶媒S的蒸發完成為止之間,被維持於各時點之腔室10內的壓力之溶媒S的露點以下。   因此,由於從基板W氣化之溶媒,係藉由溶媒捕集部32被高效率地捕集,因此,腔室10內之氣體狀的溶媒之濃度,係被維持為較低。因此,可快速地去除基板上W上的溶媒。   另外,作為用以像上述般地使溶媒捕集部32之溫度維持於上述露點以下的方法,考慮使用熱容量較小者作為溶媒捕集部32之網狀板的方法。   又,該基板乾燥步驟,係進行直至基板W乾燥為止,例如直至腔室10內之壓力成為第1預定值以下為止,或直至從排氣裝置P之渦輪分子泵的作動開始經過第2預定時間為止。(Substrate drying step) Next, in the state where the dry pump of the exhaust device P is operated, at least the exhaust pipe 30 (hereinafter, the solvent trapping part 32) of the plurality of exhaust pipes 30 is provided. In this example, the APC valve 31 is opened for all the exhaust pipes 30, and the decompression and exhaust of the chamber 10 is started. The decompression and exhaustion by the dry pump is performed until the pressure in the chamber 10 becomes, for example, 10 Pa. After that, the turbomolecular pump of the exhaust device P is actuated to further decompress and exhaust. When the pressure in the chamber 10 becomes lower than the vapor pressure of the solvent in the temperature of the substrate W (0.2 Pa or lower when the temperature of the substrate W is 23° C.) by further decompression and evacuation, the substrate W becomes The evaporation rate of the solvent S increases. In addition, at the time of decompression and exhaust, the gas in the chamber 10 is adiabatically expanded and cooled, and the temperature of the solvent trap portion 32 is lowered by the gas in the chamber 10 cooled in this way. Specifically, when the pressure in the chamber 10 is reduced to 0.2 Pa, the solvent collection part 32 is cooled to 5 to 12°C. The 5~12°C is less than the dew point of the solvent in 0.2Pa, which is 23°C. In addition, the temperature of the solvent trapping part 32 is maintained below the dew point of the solvent S at the pressure in the chamber 10 at each time point until the evaporation of the solvent S on the substrate W is completed. Therefore, since the solvent vaporized from the substrate W is efficiently collected by the solvent collection part 32, the concentration of the gaseous solvent in the chamber 10 is kept low. Therefore, the solvent on the substrate can be quickly removed. In addition, as a method for maintaining the temperature of the solvent trapping portion 32 below the dew point as described above, a method of using a mesh plate of the solvent trapping portion 32 with a smaller heat capacity can be considered. The substrate drying step is performed until the substrate W is dried, for example, until the pressure in the chamber 10 becomes equal to or less than the first predetermined value, or until the second predetermined time elapses from the start of the operation of the turbomolecular pump of the exhaust device P until.

(腔室乾燥步驟)   基板乾燥步驟後,對於有溶媒捕集部之排氣管30,係使APC閥31成為關閉狀態,對於未設置溶媒捕集部32之排氣管30(以下,無溶媒捕集部之排氣管30),係使APC閥31維持在開啟狀態。   該腔室乾燥步驟,係進行例如直至腔室10內之溶媒成為預定量以下為止,亦即直至腔室內之壓力成為第2預定值以下為止,或直至從排氣裝置P之渦輪分子泵的作動開始經過第2預定時間為止。另外,第2預定值或第2預定時間,係指在使腔室10內之壓力回到大氣壓時,殘留於腔室10內之溶媒不會再附著於基板W的值或時間。(Chamber drying step) After the substrate drying step, the APC valve 31 is closed for the exhaust pipe 30 with the solvent trapping part, and the exhaust pipe 30 (hereinafter, no solvent) is not provided with the solvent trapping part 32 The exhaust pipe 30) of the trapping part keeps the APC valve 31 in an open state. This chamber drying step is performed, for example, until the solvent in the chamber 10 becomes equal to or less than a predetermined amount, that is, until the pressure in the chamber becomes equal to or less than the second predetermined value, or until the turbomolecular pump from the exhaust device P is activated. Until the second predetermined time elapses. In addition, the second predetermined value or the second predetermined time refers to a value or time for which the solvent remaining in the chamber 10 does not adhere to the substrate W again when the pressure in the chamber 10 is returned to atmospheric pressure.

(溶媒捕集部乾燥步驟)   在腔室乾燥步驟之際,溶媒捕集部乾燥步驟亦同時被進行。在溶媒捕集部乾燥步驟中,係利用來自排氣管30之側壁或渦輪分子泵等的熱輻射,加熱溶媒捕集部32並使其乾燥。例如,溶媒捕集部32之溫度,係藉由上述熱輻射,上升至其時點之排氣管30內的壓力之溶媒的露點以上(當排氣管30內之壓力為0.05Pa的情況下,18~23℃以上)。因此,可從溶媒捕集部32快速去除/脫離溶媒,並使溶媒捕集部32乾燥。(Drying step of the solvent trapping part) The drying step of the solvent trapping part is also performed at the same time as the chamber drying step. In the solvent trapping portion drying step, the solvent trapping portion 32 is heated and dried by heat radiation from the side wall of the exhaust pipe 30 or the turbomolecular pump or the like. For example, the temperature of the solvent collection part 32 is increased by the above-mentioned thermal radiation to the dew point of the solvent at the pressure in the exhaust pipe 30 at that point (when the pressure in the exhaust pipe 30 is 0.05Pa, 18~23℃ or above). Therefore, the solvent can be quickly removed/released from the solvent collection part 32, and the solvent collection part 32 can be dried.

(基板搬出步驟)   在腔室乾燥步驟及溶媒捕集部乾燥步驟結束後,對於所有的排氣管30,使APC閥31成為關閉狀態,其後,使腔室10內之壓力回到大氣壓,並將基板W從腔室10搬出。(Substrate unloading step) After the chamber drying step and the solvent trapping section drying step are completed, the APC valve 31 is closed for all the exhaust pipes 30, and thereafter, the pressure in the chamber 10 is returned to atmospheric pressure, The substrate W is carried out from the chamber 10 .

在該基板搬出步驟後,停止排氣裝置P之渦輪分子泵,並從基板搬入步驟依序重複各步驟。After the substrate carrying-out step, the turbomolecular pump of the exhaust device P is stopped, and the steps are sequentially repeated from the substrate carrying-in step.

如上述般,在減壓乾燥裝置1中,係僅複數個排氣管30中之一部分,在APC閥31之下游具有溶媒捕集部32。因此,可依序進行基板乾燥步驟與腔室乾燥步驟,該基板乾燥步驟,係對於複數個排氣管30中之有溶媒捕集部之排氣管30,使APC閥31成為開啟狀態,該腔室乾燥步驟,係對於複數個排氣管30中之有溶媒捕集部之排氣管30,使APC閥31成為關閉狀態,並對於無溶媒捕集部之排氣管30,維持APC閥31之開啟狀態。因此,具有以下的效果。As described above, in the vacuum drying apparatus 1, only a part of the plurality of exhaust pipes 30 is provided, and the solvent trap 32 is provided downstream of the APC valve 31 . Therefore, the substrate drying step and the chamber drying step can be performed in sequence. In the substrate drying step, the APC valve 31 is opened for the exhaust pipe 30 having the solvent trapping part among the plurality of exhaust pipes 30 . In the chamber drying step, the APC valve 31 is closed for the exhaust pipe 30 with the solvent trap part among the plurality of exhaust pipes 30, and the APC valve is maintained for the exhaust pipe 30 without the solvent trap part 31's open state. Therefore, there are the following effects.

圖2,係說明減壓乾燥裝置1之效果的圖,橫軸,係表示從排氣開始起的經過時間,具體而言,係腔室10內之壓力在大氣壓的狀態下,使APC閥31成為開啟狀態後的經過時間,縱軸,係表示腔室10內之壓力。2 is a diagram for explaining the effect of the vacuum drying apparatus 1. The horizontal axis represents the elapsed time from the start of exhausting. Specifically, the pressure in the chamber 10 is at atmospheric pressure, and the APC valve 31 is set to The elapsed time after becoming the open state, and the vertical axis represents the pressure in the chamber 10 .

(案例1)   在減壓乾燥裝置1中,當所有的複數個排氣管30不具有溶媒捕集部32的情況下,即便對於所有的排氣管30,使APC閥31成為開啟狀態,亦如圖2所示般,雖在腔室10內之壓力被維持為較高的狀態(約1Pa)後,逐漸地下降,但直至腔室10內之壓力成為前述的第2預定值(例如0.09Pa)以下為止需要花費140秒以上。(Case 1) In the decompression drying apparatus 1, when all the plural exhaust pipes 30 do not have the solvent trapping part 32, even if the APC valve 31 is opened for all the exhaust pipes 30, As shown in FIG. 2 , although the pressure in the chamber 10 is maintained at a high state (about 1 Pa), it gradually decreases until the pressure in the chamber 10 reaches the aforementioned second predetermined value (for example, 0.09 Pa) or less takes 140 seconds or more.

(案例2)   在減壓乾燥裝置1中,當所有的複數個排氣管30具有溶媒捕集部32的情況下,即便對於所有的排氣管30,使APC閥31成為開啟狀態,亦可使腔室10內之壓力比起上述案例1更快速地下降至0.2Pa左右。但是,即便為經過了200秒的時點,亦無法使腔室10內之壓力成為前述的第2預定值(0.09Pa)以下。(Case 2) In the decompression drying apparatus 1, when all the plural exhaust pipes 30 have the solvent trapping part 32, even if the APC valve 31 is in the open state for all the exhaust pipes 30, it is also possible to The pressure in the chamber 10 is reduced to about 0.2 Pa more rapidly than in the above-mentioned case 1. However, even when 200 seconds have elapsed, the pressure in the chamber 10 cannot be made equal to or less than the aforementioned second predetermined value (0.09 Pa).

對此,僅複數個排氣管30中之一部分,在APC閥31之下游具有溶媒捕集部32,進行基板乾燥步驟約80秒,其後,進行腔室乾燥步驟,該基板乾燥步驟,係對於包含有溶媒捕集部之排氣管30的所有排氣管30,使APC閥31成為開啟狀態,該腔室乾燥步驟,係對於有溶媒捕集部之排氣管30,使APC閥31成為關閉狀態,並對於無溶媒捕集部之排氣管30,維持APC閥31之開啟狀態。在該情況下,以與案例1相同的速度,可使腔室10內之壓力下降至0.2Pa,而且,不僅可使腔室10內之壓力成為前述的第2預定值以下,且直至成為第2預定值以下為止僅需要花費約85秒。   在像這樣地使用了減壓乾燥裝置1的減壓乾燥步驟中,係可使腔室10內之壓力迅速地下降至前述的第2預定值以下。On the other hand, only one part of the plurality of exhaust pipes 30 has the solvent trapping part 32 downstream of the APC valve 31, and the substrate drying step is performed for about 80 seconds, and thereafter, the chamber drying step is performed. The substrate drying step is For all the exhaust pipes 30 including the exhaust pipe 30 of the solvent trapping part, the APC valve 31 is opened, and in the chamber drying step, the APC valve 31 is set to the exhaust pipe 30 including the solvent trapping part. The state is closed, and the open state of the APC valve 31 is maintained for the exhaust pipe 30 without the solvent trapping portion. In this case, at the same speed as in Case 1, the pressure in the chamber 10 can be lowered to 0.2 Pa, and the pressure in the chamber 10 can be made not only the aforementioned second predetermined value or less, but also until it becomes the second predetermined value. 2 It takes only about 85 seconds to reach the predetermined value or less. In the decompression drying step using the decompression drying apparatus 1 as described above, the pressure in the chamber 10 can be rapidly decreased to the above-mentioned second predetermined value or less.

又,在減壓乾燥裝置1,係具有以下的效果。當對俯視圖呈四角形狀之基板W進行減壓乾燥的情況下, 基板W之角部比起其他部分更容易乾燥。但是,基板W之乾燥時間,係在同一基板內均勻為較佳。又,比起基板中之遠離設置有溶媒捕集部32之排氣管30的部分,接近設置有溶媒捕集部32之排氣管30的部分者更容易乾燥。因此,在減壓乾燥裝置1中,係僅在對於複數個排氣管30中之遠離載置台20上之基板W的角部之開口13b所設置的排氣管30,設置有溶媒捕集部32。藉此,即便不使APC閥31之開合度依每個排氣管30不同,亦可提高基板W之乾燥時間的面內均勻性。In addition, the vacuum drying apparatus 1 has the following effects. When the substrate W having a square shape in plan view is dried under reduced pressure, the corners of the substrate W are more easily dried than other portions. However, the drying time of the substrate W is preferably uniform within the same substrate. In addition, the portion of the substrate close to the exhaust pipe 30 in which the solvent trapping portion 32 is provided is easier to dry than the portion of the substrate that is far from the exhaust pipe 30 in which the solvent trapping portion 32 is provided. Therefore, in the decompression drying apparatus 1, the solvent trapping portion is provided only in the exhaust pipe 30 provided for the opening 13b of the plurality of exhaust pipes 30 that is far from the corner portion of the substrate W on the mounting table 20 32. Thereby, the in-plane uniformity of the drying time of the substrate W can be improved without making the opening and closing degree of the APC valve 31 different for each exhaust pipe 30 .

圖3,係表示減壓乾燥裝置1的其他例中之關於溶媒捕集部32之構造的圖。   在前述的例子中,溶媒捕集部32之冷卻或升溫亦即加熱,係藉由在減壓時絕熱膨脹而冷卻之腔室10內的氣體或來自排氣管30等的熱輻射加以進行。FIG. 3 is a diagram showing the structure of the solvent trapping unit 32 in another example of the vacuum drying apparatus 1 . In the aforementioned example, the cooling or heating of the solvent trap 32, that is, heating, is performed by the gas in the chamber 10 cooled by adiabatic expansion during decompression, or by heat radiation from the exhaust pipe 30 or the like.

取而代之,亦可設成為如圖3所示般,將具備複數個冷媒管50作為冷卻及加熱溶媒捕集部32之溫度可變機構的構成,並藉由溶接等,將該些冷媒管50固定於捕集溶媒的網狀板32a,使冷卻之冷媒與加熱之冷媒可切換地流動,藉此,冷卻及加熱溶媒捕集部32亦即網狀板32a。藉此,可更迅速且適當地冷卻/加熱溶媒捕集部32。Alternatively, as shown in FIG. 3 , a plurality of refrigerant pipes 50 may be provided as a temperature variable mechanism for cooling and heating the solvent trapping portion 32, and these refrigerant pipes 50 may be fixed by welding or the like. In the mesh plate 32a that traps the solvent, the cooling medium and the heating medium can be switched to flow, thereby cooling and heating the mesh plate 32a, which is the solvent trapping portion 32. Thereby, the solvent collection part 32 can be cooled and heated more rapidly and appropriately.

另外,當像這樣地將溫度可變機構設置於減壓乾燥裝置1的情況下,在前述的基板乾燥步驟中,藉由上述溫度可變機構冷卻溶媒捕集部32為較佳。因為藉此可縮短基板乾燥步驟所需的時間。   又,當設置有溫度可變機構的情況下,在與前述之腔室乾燥步驟同時被進行的溶媒捕集部乾燥步驟中,以上述溫度可變機構加熱溶媒捕集部32為較佳。因為藉此可縮短溶媒捕集部乾燥步驟所需的時間。In addition, when the temperature variable mechanism is provided in the decompression drying apparatus 1 in this way, it is preferable to cool the solvent collection part 32 by the said temperature variable mechanism in the said board|substrate drying process. Because thereby the time required for the substrate drying step can be shortened. Furthermore, when a temperature variable mechanism is provided, it is preferable to heat the solvent trap portion 32 by the temperature variable mechanism in the solvent trap portion drying step performed simultaneously with the aforementioned chamber drying step. This is because the time required for the drying step of the solvent trapping section can be shortened thereby.

圖4,係為了說明封閉構件之其他例,表示設置有封閉構件之排氣管30之周邊之態樣的圖,且僅表示排氣管30之剖面。   在前述的例中,雖然減壓乾燥裝置1具有可調節開合度之APC閥31作為「封閉構件」,但如圖4所示般,亦可具有雖無法調節開合度而開關自如地封閉排氣管30之擋板60作為「封閉構件」。在圖4的例中,擋板60,係以鉸鏈方式被安裝於排氣管30。該擋板60,係藉由控制部40予以控制。FIG. 4 is a diagram showing the state of the periphery of the exhaust pipe 30 provided with the closing member in order to explain another example of the closing member, and only the cross section of the exhaust pipe 30 is shown. In the aforementioned example, the vacuum drying apparatus 1 has an APC valve 31 whose opening and closing degree can be adjusted as a “closing member”, but as shown in FIG. The baffle 60 of the tube 30 acts as a "closing member". In the example of FIG. 4 , the baffle 60 is attached to the exhaust pipe 30 in a hinged manner. The shutter 60 is controlled by the control unit 40 .

又,在具有擋板60的構成中,係可藉由調整使擋板60成為開啟狀態之排氣管30的數量之方式,控制腔室10內的減壓速度。例如,在具有擋板60的構成中,當必需降低基板乾燥步驟之前半部分的減壓速度而在後半部分提高的情況,係首先,對於有溶媒捕集部之排氣管30,維持使擋板60成為關閉狀態,對於無溶媒捕集部之排氣管30,使擋板60成為開啟狀態,並在無需降低減壓速度後,對於有溶媒捕集部之排氣管30,亦使擋板60成為開啟狀態。又,例如,在具有擋板60的構成中,當必需提高基板乾燥步驟之前半部分的減壓速度而在後半部分降低的情況,係首先,對於所有的排氣管30,使擋板60成為開啟狀態,並在必需降低減壓速度後,僅對於有溶媒捕集部之排氣管30,使擋板60維持開啟狀態,對於無溶媒捕集部之排氣管30,使擋板60成為關閉狀態。Moreover, in the structure provided with the baffle 60, the decompression speed in the chamber 10 can be controlled by adjusting the number of the exhaust pipes 30 in the open state of the baffle 60. For example, in the configuration with the baffle 60, when it is necessary to reduce the decompression speed in the first half of the substrate drying step and increase it in the second half, first, the exhaust pipe 30 having the solvent trapping portion is kept at a constant pressure. The plate 60 is in the closed state, and the baffle 60 is opened for the exhaust pipe 30 without the solvent trapping portion, and the exhaust pipe 30 with the solvent trapping portion is also opened without reducing the decompression speed. The board 60 is in an open state. Also, for example, in the configuration with the baffles 60, when it is necessary to increase the decompression speed in the first half of the substrate drying step and lower it in the second half, first, for all the exhaust pipes 30, the baffles 60 are made to be In the open state, and after the decompression speed must be reduced, the baffle 60 is kept open only for the exhaust pipe 30 with the solvent trapping part, and the baffle 60 is kept open for the exhaust pipe 30 without the solvent trapping part. Disabled.

圖5,係表示腔室10之底板13之其他例的圖。   在前述的例中,底板13,係沿著載置台20之一邊設置有複數個開口13a、13b,且沿著與上述一邊對向的邊設置相同個數。但是,底板13,係不限於該例,如圖5所示般,亦可沿著載置台20之各邊逐一設置相同個數。   又,在以上的例中,設置於底板13之開口13a、13b的個數雖為12個,但只要是複數個即可,亦可未滿12個或多於12個。   又,分別相對於開口13a、13b連通有排氣管30。FIG. 5 is a diagram showing another example of the bottom plate 13 of the chamber 10 . In the aforementioned example, the bottom plate 13 is provided with a plurality of openings 13a, 13b along one side of the mounting table 20, and the same number is provided along the side opposite to the above-mentioned side. However, the bottom plate 13 is not limited to this example, and as shown in FIG. 5 , the same number may be provided one by one along each side of the mounting table 20 . Furthermore, in the above example, although the number of the openings 13a and 13b provided in the bottom plate 13 is 12, it is sufficient as long as it is plural, and it may be less than 12 or more than 12. In addition, the exhaust pipes 30 communicate with the openings 13a and 13b, respectively.

圖6,係表示減壓乾燥裝置1之排氣管線之其他例的側面圖,且僅表示腔室10的底板13與排氣管線。   在前述的例中,減壓乾燥裝置1之排氣管線,係排氣管30分別連接有1個排氣裝置P的構成。但是,減壓乾燥裝置1之排氣管線,係不限於該例,如圖6所示,亦可為複數個排氣管30共同使用1個排氣裝置P的構成。FIG. 6 is a side view showing another example of the exhaust line of the vacuum drying apparatus 1 , and only the bottom plate 13 of the chamber 10 and the exhaust line are shown. In the aforementioned example, the exhaust line of the vacuum drying device 1 and the exhaust pipe 30 are each connected to one exhaust device P. However, the exhaust line of the vacuum drying apparatus 1 is not limited to this example, and as shown in FIG.

亦在該情況下,僅複數個排氣管30中之一部分,在APC閥31之下游設置溶媒捕集部32,並與前述相同地,進行基板乾燥步驟與腔室乾燥步驟,藉此,比起在所有的複數個排氣管30設置溶媒捕集部32之構成或在複數個排氣管30的任一者皆不設置溶媒捕集部32之構成,可迅速地達成腔室10內之溶媒為少量的狀態,亦即達成腔室10內之壓力足夠低的狀態。Also in this case, only a part of the plurality of exhaust pipes 30 is provided with the solvent trapping part 32 downstream of the APC valve 31, and the substrate drying step and the chamber drying step are performed in the same manner as described above. From the configuration in which the solvent trapping portion 32 is provided in all of the plurality of exhaust pipes 30 or the configuration in which the solvent trapping portion 32 is not provided in any of the plurality of exhaust pipes 30, the solution in the chamber 10 can be quickly achieved. The solvent is in a state of a small amount, that is, a state in which the pressure in the chamber 10 is sufficiently low.

圖7,係為了說明減壓乾燥裝置1之排氣管線的其他例,表示排氣管30之周邊之態樣的圖。   在前述的例中,雖係在減壓乾燥裝置1之排氣管線的排氣管30中,封閉構件與溶媒捕集部32之間並未設置任何構件,但如圖7所示般,亦可在封閉構件(在圖例中,係APC閥31)與溶媒捕集部32之間設置氣體供給部70,該氣體供給部70,係將促進被溶媒捕集部32捕集之溶媒之氣化的氣體供給至排氣管30內。FIG. 7 is a diagram showing a state of the periphery of the exhaust pipe 30 in order to explain another example of the exhaust line of the vacuum drying apparatus 1 . In the above-mentioned example, although the exhaust pipe 30 of the exhaust line of the vacuum drying apparatus 1 is not provided with any member between the closing member and the solvent trapping part 32, as shown in FIG. A gas supply part 70 may be provided between the closing member (in the illustration, the APC valve 31 ) and the solvent trapping part 32 , and the gas supplying part 70 will promote the vaporization of the solvent trapped by the solvent trapping part 32 The gas is supplied to the exhaust pipe 30 .

當像這樣地設置了氣體供給部70的情況下,在前述的腔室乾燥步驟及溶媒捕集部乾燥步驟中,當對於有溶媒捕集部之排氣管30,使APC閥31成為關閉狀態之際,與此連動而開始供給氣體至氣體供給部70,亦即開始供給氣體至溶媒捕集部32為較佳。從該氣體供給部70供給之氣體,係例如惰性氣體。只要該氣體之供給量為排氣管30內之溶媒捕集部32之周邊的壓力不超過被捕集至溶媒捕集部32之溶媒之蒸氣壓的量,則可有效率地使溶媒捕集部32乾燥。When the gas supply unit 70 is provided in this way, in the chamber drying step and the solvent trapping unit drying step, the APC valve 31 is closed to the exhaust pipe 30 having the solvent trapping unit. At this time, it is preferable to start supplying the gas to the gas supply part 70 in conjunction with this, that is, to start supplying the gas to the solvent trapping part 32 . The gas supplied from the gas supply unit 70 is, for example, an inert gas. As long as the supply amount of the gas is such that the pressure around the solvent trapping portion 32 in the exhaust pipe 30 does not exceed the vapor pressure of the solvent trapped in the solvent trapping portion 32, the solvent can be trapped efficiently. Section 32 is dry.

(其他變形例)   在以上的例中,係在基板乾燥步驟中之腔室10內的減壓排氣之際,對於所有的排氣管30,使APC閥31成為開啟狀態。但是,在基板乾燥步驟中,亦可僅對於複數個排氣管30中之有溶媒捕集部之排氣管30,使APC閥31成為開啟狀態。在該情況下,亦可在腔室10內之壓力變得小於預定值後,亦即在基板W之乾燥進行某程度後,使所有的APC閥31成為開啟狀態。   僅對於複數個排氣管30中之有溶媒捕集部之排氣管30,使APC閥31成為開啟狀態,藉此,依溶劑之不同,可使基板W更均勻地乾燥。在該情況下,基板W之乾燥所需的時間,雖係比從一開始使所有的排氣管30成為開啟狀態之情況更長,但在基板W之乾燥進行某程度後,使所有的APC閥31成為開啟狀態,藉此,可兼顧均勻地乾燥基板W與在短時間內進行基板W之乾燥。(Other Modifications) In the above example, in the case of decompression and exhaust in the chamber 10 in the substrate drying step, all the exhaust pipes 30 are made to open the APC valve 31. However, in the substrate drying step, the APC valve 31 may be opened only for the exhaust pipe 30 having the solvent collection part among the plurality of exhaust pipes 30 . In this case, after the pressure in the chamber 10 becomes lower than a predetermined value, that is, after the drying of the substrate W has progressed to a certain extent, all the APC valves 31 may be opened. The APC valve 31 is opened only for the exhaust pipe 30 having the solvent trapping part among the plurality of exhaust pipes 30, whereby the substrate W can be dried more uniformly depending on the solvent. In this case, the time required for drying the substrate W is longer than when all the exhaust pipes 30 are opened from the beginning, but after drying the substrate W to a certain extent, all the APCs By opening the valve 31, the substrate W can be uniformly dried and the substrate W can be dried in a short time.

在以上的例中,係在溶媒捕集部乾燥步驟結束後,進行基板的搬出步驟。但是,只要為排氣管30分別設置有1個排氣裝置P的構成,則當溶媒捕集部乾燥步驟所需之時間比腔室乾燥步驟所需之時間長的情況下,係亦可在溶媒捕集部乾燥步驟結束之前,進行基板的搬出步驟或下個基板的搬入步驟。In the above example, the carrying out step of the substrate is performed after the solvent trapping part drying step is completed. However, as long as the exhaust pipes 30 are each provided with one exhaust device P, when the time required for the solvent trapping section drying step is longer than the time required for the chamber drying step, the Before the drying step of the solvent collection part is completed, the carrying-out step of the substrate or the carrying-in step of the next substrate is performed.

又,在以上的例中,APC閥31等的封閉構件,雖係被設置於排氣管30,但只要是對於排氣路徑進行設置即可,例如亦可設置於開口13a、13b內,又,亦可以封閉開口13a、13b的方式,設置於底板13之上面。   相同地,溶媒捕集部32,係只要位於上述封閉構件之下游,則亦可設置於開口13b內而非排氣管30。 [產業上之可利用性]In addition, in the above example, the closing member such as the APC valve 31 is provided in the exhaust pipe 30, but it may be provided in the exhaust path as long as it is provided in the openings 13a and 13b, for example. , the openings 13a and 13b can also be closed on the upper surface of the bottom plate 13 . Similarly, the solvent trapping portion 32 may be provided in the opening 13b instead of the exhaust pipe 30 as long as it is located downstream of the above-mentioned closing member. [Industrial Availability]

本發明,係在對以噴墨方式塗佈有溶液之基板進行減壓乾燥的技術是有用的。The present invention is useful in a technique of drying under reduced pressure on a substrate coated with a solution by an inkjet method.

1‧‧‧減壓乾燥裝置10‧‧‧處理容器11‧‧‧本體部12‧‧‧頂板13‧‧‧底板13a、13b‧‧‧開口20‧‧‧載置台30‧‧‧排氣管31‧‧‧閥32‧‧‧溶媒捕集部32a‧‧‧網狀板40‧‧‧控制部50‧‧‧冷媒管60‧‧‧擋板1‧‧‧Decompression drying device 10‧‧‧Processing container 11‧‧‧Main body 12‧‧‧Top plate 13‧‧‧Bottom plate 13a, 13b‧‧‧Opening 20‧‧‧Plating table 30‧‧‧Exhaust pipe 31‧‧‧Valve 32‧‧‧Solvent collection part 32a‧‧‧Mesh plate 40‧‧‧Control part 50‧‧‧Refrigerant pipe 60‧‧‧Baffle plate

[圖1]表示本發明之實施形態之減壓乾燥裝置之概略構成的圖。   [圖2]說明圖1之減壓乾燥裝置之效果的圖。   [圖3]表示減壓乾燥裝置的其他例中之關於溶媒捕集部之構造的圖。   [圖4]表示設置有其他例之封閉構件之排氣管之周邊之態樣的圖。   [圖5]表示腔室之底板之其他例的圖。   [圖6]表示減壓乾燥裝置之排氣管線之其他例的側視圖。   [圖7]表示減壓乾燥裝置之排氣管線之另一例的說明圖。[ Fig. 1] Fig. 1 is a diagram showing a schematic configuration of a vacuum drying apparatus according to an embodiment of the present invention. [Fig. 2] A diagram illustrating the effect of the vacuum drying apparatus of Fig. 1. [Fig. [Fig. 3] A diagram showing the structure of the solvent trapping section in another example of the vacuum drying apparatus. [Fig. 4] A diagram showing the state of the periphery of the exhaust pipe provided with the closing member of another example. [Fig. 5] A diagram showing another example of the bottom plate of the chamber. [Fig. 6] A side view showing another example of the exhaust line of the vacuum drying apparatus. [Fig. 7] An explanatory diagram showing another example of the exhaust line of the vacuum drying apparatus.

1:減壓乾燥裝置 1: Decompression drying device

10:處理容器 10: Handling the container

11:本體部 11: Main body

12:頂板 12: Top plate

13:底板 13: Bottom plate

13a:開口 13a: Opening

13b:開口 13b: Opening

20:載置台 20: Mounting table

30:排氣管 30: Exhaust pipe

31:閥 31: Valve

32:溶媒捕集部 32: Solvent capture section

40:控制部 40: Control Department

P:排氣裝置 P: Exhaust

W:基板 W: substrate

Claims (7)

一種減壓乾燥裝置,在減壓狀態下,使被塗佈於基板之表面的有機材料膜中之溶媒乾燥,該減壓乾燥裝置,其特徵係,具備有:腔室,收容前述基板;及複數個排氣路徑,連接該腔室內之空間與對前述腔室內進行排氣的排氣裝置,前述複數個排氣路徑,係分別具有開關自如地封閉該排氣路徑之封閉構件,前述複數個排氣路徑,係包含有:有溶媒捕集部之排氣路徑,在前述封閉構件之下游,設置有捕集從前述基板氣化的溶液中之溶媒的溶媒捕集部;及無溶媒捕集部之排氣路徑,未設置有前述溶媒捕集部,前述有溶媒捕集部之排氣路徑的前述腔室側之端部,係比起前述無溶媒捕集部之排氣路徑的前述腔室側之端部,更遠離被收容於前述腔室之前述基板的角部。 A vacuum drying device for drying a solvent in an organic material film coated on a surface of a substrate under reduced pressure, the vacuum drying device is characterized by comprising: a chamber for accommodating the substrate; and A plurality of exhaust passages connect the space in the chamber with an exhaust device for exhausting the inside of the chamber, the plurality of exhaust passages are respectively provided with a closing member that can open and close the exhaust passage, and the plurality of exhaust passages are respectively provided. The exhaust path includes: an exhaust path having a solvent trapping part, downstream of the closing member, a solvent trapping part for trapping the solvent in the solution vaporized from the substrate is provided; and a solventless trapping part The exhaust path of the part is not provided with the solvent collection part, and the end part of the exhaust path with the solvent collection part on the side of the chamber is compared with the cavity of the exhaust path without the solvent collection part. The end portion on the side of the chamber is further away from the corner portion of the substrate housed in the chamber. 如申請專利範圍第1項之減壓乾燥裝置,其中,具備有:溫度可變機構,冷卻及/或加熱前述溶媒捕集部。 The vacuum drying apparatus according to claim 1, further comprising: a temperature variable mechanism, and cooling and/or heating the solvent trapping part. 如申請專利範圍第1項之減壓乾燥裝置,其中,在前述溶媒捕集部與前述封閉構件之間具備有氣體供 給部,該氣體供給部,係供給促進被該溶媒捕集部捕集之溶媒之氣化的氣體。 The vacuum drying apparatus according to claim 1, wherein a gas supply is provided between the solvent trapping part and the closing member. The supplying portion, the gas supplying portion, supplies a gas that promotes vaporization of the solvent captured by the solvent capturing portion. 一種減壓乾燥方法,使用了減壓乾燥裝置,該減壓乾燥裝置,係在減壓狀態下,使被塗佈於基板之表面的有機材料膜中之溶媒乾燥,該減壓乾燥方法,其特徵係,前述減壓乾燥裝置,係具備有:腔室,收容前述基板;及複數個排氣路徑,連接該腔室內之空間與對前述腔室內進行排氣的排氣裝置,前述複數個排氣路徑,係分別具有開關自如地封閉該排氣路徑之封閉構件,前述複數個排氣路徑,係包含有:有溶媒捕集部之排氣路徑,在前述封閉構件之下游,設置有捕集從前述基板氣化的溶液中之溶媒的溶媒捕集部;及無溶媒捕集部之排氣路徑,未設置有前述溶媒捕集部,該減壓乾燥方法,係包含有:基板乾燥步驟,對於前述複數個排氣路徑中之至少前述有溶媒捕集部之排氣路徑,使前述封閉構件成為開啟狀態;及腔室乾燥步驟,在該基板乾燥步驟後,對於前述複數個排氣路徑中之前述有溶媒捕集部之排氣路徑,使前述封閉構件成為關閉狀態,對於前述無溶媒捕集部之排氣路徑,使前述封閉構件成為開啟狀態,前述基板乾燥步驟,係包含有冷卻前述溶媒捕集部的步驟。 A method of drying under reduced pressure, using a drying device under reduced pressure, the drying device under reduced pressure is used to dry a solvent in an organic material film coated on the surface of a substrate, the drying method under reduced pressure, wherein It is characterized in that the decompression drying device includes: a chamber for accommodating the substrate; and a plurality of exhaust paths connecting the space in the chamber and an exhaust device for exhausting the chamber, and the plurality of rows Each of the air passages has a closing member that can open and close the exhaust passage. The plurality of exhaust passages include an exhaust passage having a solvent trapping portion, and a trapping member is provided downstream of the closing member. The solvent trapping part of the solvent in the solution vaporized from the substrate; and the exhaust path without the solvent trapping part, without the solvent trapping part, the vacuum drying method comprises: a substrate drying step, For at least one of the plurality of exhaust paths including the solvent trapping portion, the closing member is opened; and in the chamber drying step, after the substrate drying step, for the plurality of exhaust paths For the exhaust path with the solvent trapping part, the closing member is in a closed state, and for the exhaust path without the solvent trapping part, the closing member is opened in an open state, and the substrate drying step includes cooling the Steps in the solvent trapping section. 如申請專利範圍第4項之減壓乾燥方法,其中,前述腔室乾燥步驟,係包含有加熱前述溶媒捕集部的步驟。 The drying method under reduced pressure of claim 4, wherein the chamber drying step includes a step of heating the solvent trapping portion. 如申請專利範圍第4項之減壓乾燥方法,其中,前述腔室乾燥步驟,係包含有如下述之步驟:從被設置於前述封閉構件與前述溶媒捕集部之間的氣體供給部,供給促進被該溶媒捕集部捕集的溶媒之氣化的氣體。 The vacuum drying method according to claim 4, wherein the chamber drying step includes a step of supplying a gas from a gas supply unit provided between the closing member and the solvent trapping unit. A gas that promotes the vaporization of the solvent captured by the solvent capture unit. 如申請專利範圍第4項之減壓乾燥方法,其中,前述有溶媒捕集部之排氣路徑的前述腔室側之端部,係比起前述無溶媒捕集部之排氣路徑的前述腔室側之端部,更遠離被收容於前述腔室之前述基板的角部,前述基板乾燥步驟,係包含有如下述步驟為較佳:對於前述複數個排氣路徑中之前述有溶媒捕集部之排氣路徑,使前述封閉構件成為開啟狀態,其後,對於所有的前述複數個排氣路徑,使前述封閉構件成為開啟狀態。 The drying method under reduced pressure according to claim 4, wherein the end of the exhaust path with the solvent trapping portion on the side of the chamber is smaller than the cavity of the exhaust path without the solvent trapping portion. The end of the chamber side is further away from the corner of the substrate accommodated in the chamber, and the substrate drying step preferably includes the following steps: for the solvent trapping in the plurality of exhaust paths The said closing member is made into the open state of the exhaust passage of the part, and thereafter, the said closing member is made into the open state for all the said plural exhaust passages.
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