TW201907132A - Vacuum drying device - Google Patents
Vacuum drying device Download PDFInfo
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- TW201907132A TW201907132A TW107116715A TW107116715A TW201907132A TW 201907132 A TW201907132 A TW 201907132A TW 107116715 A TW107116715 A TW 107116715A TW 107116715 A TW107116715 A TW 107116715A TW 201907132 A TW201907132 A TW 201907132A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
Description
本發明,係關於一種減壓乾燥裝置,其在減壓狀態下,使被塗佈於基板之表面的有機材料膜中之溶媒乾燥。The present invention relates to a reduced-pressure drying device for drying a solvent in an organic material film coated on a surface of a substrate under a reduced pressure.
以往,已知有利用有機EL (Electroluminescence)之發光的發光二極體即有機發光二極體(OLED:Organic Light Emitting Diode)。使用了該有機發光二極體之有機EL顯示器,係除了薄型輕量且低消費電力以外,具有響應速度或視角、對比方面優異這樣的優點,因此,近年來,作為次世代之平板顯示器(FPD)備受矚目。Conventionally, an organic light emitting diode (OLED: Organic Light Emitting Diode), which is a light emitting diode using organic EL (Electroluminescence), is known. The organic EL display using this organic light emitting diode has the advantages of excellent response speed, viewing angle, and contrast, in addition to being thin and light, and has low power consumption. Therefore, in recent years, it has become the next-generation flat panel display (FPD). ) Attracted much attention.
有機發光二極體,係具有在基板上的陽極與陰極之間隔著有機EL層的構造。有機EL層,係例如從陽極側依序積層電洞注入層、電洞輸送層、發光層、電子輸送層及電子注入層而形成。在形成該些有機EL層的各層(特別是電洞注入層、電洞輸送層及發光層)之際,係例如可使用以噴墨方式對基板上吐出有機材料之液滴這樣的方法。An organic light emitting diode has a structure in which an organic EL layer is interposed between an anode and a cathode on a substrate. The organic EL layer is formed, for example, by sequentially stacking a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer from the anode side. When forming each of these organic EL layers (especially a hole injection layer, a hole transport layer, and a light emitting layer), for example, a method of ejecting droplets of an organic material on a substrate by an inkjet method can be used.
在以噴墨方式被吐出至基板上的有機材料中,係含有多量的溶媒。因此,以去除溶媒為目的,在減壓狀態下,進行使該溶媒乾燥的減壓乾燥處理。 用以進行減壓乾燥處理之減壓乾燥裝置,係具備有:處理容器,收容減壓乾燥對象之基板,且可進行抽真空;及排氣管,一端被連接於處理容器,另一端被設置為排氣裝置,並藉由排氣裝置,對處理容器內進行排氣(參閱專利文獻1、2)。The organic material ejected onto the substrate by an inkjet method contains a large amount of a solvent. Therefore, for the purpose of removing the solvent, a reduced-pressure drying process is performed in which the solvent is dried under reduced pressure. A reduced-pressure drying device for performing reduced-pressure drying processing is provided with: a processing container, which houses a substrate for reduced-pressure drying, and can be evacuated; and an exhaust pipe, one end of which is connected to the processing container and the other end of which is provided The exhaust device is an exhaust device, and the inside of the processing container is exhausted by the exhaust device (see Patent Documents 1 and 2).
專利文獻1之減壓乾燥裝置,係以使基板快速地乾燥等為目的,在排氣管設置有捕集從基板上的有機材料膜揮發之溶媒的溶媒捕集部,若基板之減壓乾燥結束時,則關閉被設置於溶媒捕集部與處理容器之間的閥,使處理容器內回到大氣壓而從處理容器內搬出基板。The decompression drying device of Patent Document 1 is for the purpose of quickly drying a substrate, etc. The exhaust pipe is provided with a solvent trapping unit for trapping a solvent volatile from an organic material film on the substrate. At the end, the valve provided between the solvent collection unit and the processing container is closed, the inside of the processing container is returned to atmospheric pressure, and the substrate is carried out from the processing container.
又,專利文獻2之減壓乾燥裝置,係為了在短時間內效率良好地去除處理容器內之溶媒,而在處理容器內設置上述溶媒捕集部,並且對於處理容器設置紫外線照射部。該減壓乾燥裝置,係從紫外線照射部對溶媒捕集部照射紫外線,以使被該溶媒捕集部捕集的溶媒中所含有之有機化合物容易揮發的方式,進行分解。 [先前技術文獻] [專利文獻]In addition, in the vacuum drying device of Patent Document 2, in order to efficiently remove the solvent in the processing container in a short period of time, the solvent trapping section is provided in the processing container, and an ultraviolet irradiation section is provided in the processing container. The reduced-pressure drying device irradiates ultraviolet rays from the ultraviolet ray irradiating section to the solvent trapping section to decompose the organic compounds contained in the solvent trapped by the solvent trapping section so as to be easily volatile. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本特開2005-85814號公報 [專利文獻2]日本特開2014-238194號公報[Patent Document 1] Japanese Patent Laid-Open No. 2005-85814 [Patent Document 2] Japanese Patent Laid-Open No. 2014-238194
[本發明所欲解決之課題][Problems to be Solved by the Invention]
然而,有時被要求使直至基板之減壓乾燥完成為止的時間,換言之,直至處理容器內之壓力成為預定值以下且即便處理容器內回到大氣壓亦不會產生問題為止的時間(節拍時間)比專利文獻1及2之減壓乾燥裝置更縮短。However, it is sometimes required that the time until the decompression drying of the substrate is completed, in other words, the time until the pressure in the processing container becomes below a predetermined value and no problem occurs even if the processing container returns to atmospheric pressure (tact time). It is shorter than the vacuum drying apparatus of patent documents 1 and 2.
本發明,係有鑑於該點而進行研究者,以提供一種直至基板之減壓乾燥完成為止的時間較短之減壓乾燥裝置為目的。 [用以解決課題之手段]The present invention has been made in view of this point, and an object of the present invention is to provide a reduced-pressure drying device having a short time until the reduced-pressure drying of the substrate is completed. [Means to solve the problem]
為了達成前述之目的,本發明,係一種減壓乾燥裝置,其在減壓狀態下,使被塗佈於基板之表面的有機材料膜中之溶媒乾燥,該減壓乾燥裝置,其特徵係,具備有:腔室,收容前述基板;及複數個排氣路徑,連接該腔室內之空間與對前述腔室內進行排氣的排氣裝置,前述複數個排氣路徑,係分別具有開關自如地封閉該排氣路徑之封閉構件,前述複數個排氣路徑,係包含有:有溶媒捕集部之排氣路徑,在前述封閉構件之下游,設置有捕集從前述基板氣化的前述溶液中之溶媒的溶媒捕集部;及無溶媒捕集部之排氣路徑,未設置有前述溶媒捕集部。In order to achieve the foregoing object, the present invention relates to a reduced-pressure drying device for drying a solvent in an organic material film coated on a surface of a substrate under a reduced pressure. The reduced-pressure drying device is characterized in that: Equipped with: a chamber, which houses the substrate; and a plurality of exhaust paths, which connect the space in the chamber and an exhaust device for exhausting the chamber, and the plurality of exhaust paths are each closed with a switch. The closed member of the exhaust path, the plurality of exhaust paths, includes: an exhaust path having a solvent trapping section, and downstream of the closed member, a method for trapping one of the solutions vaporized from the substrate is provided. The solvent trapping section of the solvent and the exhaust path without the solvent trapping section are not provided with the aforementioned solvent trapping section.
前述有溶媒捕集部之排氣路徑的前述腔室側之端部,係比起前述無溶媒捕集部之排氣路徑的前述腔室側之端部,更遠離被收容於前述腔室之前述基板的角部為較佳。The end portion on the chamber side of the exhaust path with the solvent trapping portion is farther away from the end portion on the chamber side of the exhaust path without the solvent trapping portion than the end portion on the chamber side of the exhaust path without the solvent trapping portion. The corners of the substrate are preferred.
具備有溫度可變機構為較佳,該溫度可變機構,係冷卻及/或加熱前述溶媒捕集部。It is preferable to include a temperature variable mechanism that cools and / or heats the solvent trapping unit.
在前述溶媒捕集部與前述封閉構件之間具備有氣體供給部為較佳,該氣體供給部,係供給促進被該溶媒捕集部捕集之溶媒之氣化的氣體。It is preferable that a gas supply portion is provided between the solvent trapping portion and the closing member. The gas supply portion supplies a gas that promotes vaporization of the solvent trapped by the solvent trapping portion.
根據另一觀點之本發明,一種減壓乾燥方法,係使用了減壓乾燥裝置,該減壓乾燥裝置,係在減壓狀態下,使被塗佈於基板之表面的有機材料膜中之溶媒乾燥,該減壓乾燥方法,其特徵係,前述減壓乾燥裝置,係具備有:腔室,收容前述基板;及複數個排氣路徑,連接該腔室內之空間與對前述腔室內進行排氣的排氣裝置,前述複數個排氣路徑,係分別具有開關自如地封閉該排氣路徑之封閉構件,前述複數個排氣路徑,係包含有:有溶媒捕集部之排氣路徑,在前述封閉構件之下游,設置有捕集從前述基板氣化的前述溶液中之溶媒的溶媒捕集部;及無溶媒捕集部之排氣路徑,未設置有前述溶媒捕集部,該減壓乾燥方法,係包含有:基板乾燥步驟,對於前述複數個排氣路徑中之至少前述有溶媒捕集部之排氣路徑,使前述封閉構件成為開啟狀態;及腔室乾燥步驟,在該基板乾燥步驟後,對於前述複數個排氣路徑中之前述有溶媒捕集部之排氣路徑,使前述封閉構件成為關閉狀態,對於前述無溶媒捕集部之排氣路徑,使前述封閉構件成為開啟狀態。According to the present invention according to another aspect, a reduced-pressure drying method uses a reduced-pressure drying device, and the reduced-pressure drying device uses a solvent in an organic material film coated on a surface of a substrate under a reduced pressure. Drying, the reduced-pressure drying method is characterized in that the above-mentioned reduced-pressure drying device is provided with: a chamber that houses the substrate; and a plurality of exhaust paths connecting the space in the chamber and exhausting the chamber. The exhaust device has a plurality of exhaust paths, each of which has a closing member that can freely close the exhaust path. The exhaust paths include an exhaust path with a solvent trapping section. Downstream of the closed member, a solvent trapping section for trapping the solvent in the solution vaporized from the substrate is provided; and the exhaust path without the solvent trapping section is not provided with the solvent trapping section, and the vacuum drying is performed. The method includes: a substrate drying step, for at least the exhaust path having a solvent trapping section among the plurality of exhaust paths, causing the closed member to be opened; and a chamber dry A step of, after the substrate drying step, for the exhaust path of the solvent trapping section among the plurality of exhaust paths, the closed member is closed, and for the exhaust path of the solventless trap section, The closing member is in an opened state.
前述基板乾燥步驟,係包含有冷卻前述溶媒捕集部的步驟為較佳。The substrate drying step preferably includes a step of cooling the solvent trapping portion.
前述腔室乾燥步驟,係包含有加熱前述溶媒捕集部的步驟為較佳。Preferably, the chamber drying step includes a step of heating the solvent trapping portion.
前述腔室乾燥步驟,係包含有如下述之步驟為較佳:從被設置於前述封閉構件與前述溶媒捕集部之間的氣體供給部,供給促進被該溶媒捕集部捕集的溶媒之氣化的氣體。It is preferable that the chamber drying step includes a step of supplying, from a gas supply section provided between the sealing member and the solvent trap section, a solvent for promoting the trapping of the solvent trapped by the solvent trap section. Vaporized gas.
前述有溶媒捕集部之排氣路徑的前述腔室側之端部,係比起前述無溶媒捕集部之排氣路徑的前述腔室側之端部,更遠離被收容於前述腔室之前述基板的角部,前述基板乾燥步驟,係包含有如下述步驟為較佳:對於前述複數個排氣路徑中之前述有溶媒捕集部之排氣路徑,使前述封閉構件成為開啟狀態,其後,對於所有的前述複數個排氣路徑,使前述封閉構件成為開啟狀態。 [發明之效果]The end portion on the chamber side of the exhaust path with the solvent trapping portion is farther away from the end portion on the chamber side of the exhaust path without the solvent trapping portion than the end portion on the chamber side of the exhaust path without the solvent trapping portion. The corner portion of the substrate and the substrate drying step preferably include the following steps: For the exhaust path of the solvent trapping section among the plurality of exhaust paths, the closed member is turned on, and Then, the closed member is turned on for all of the plurality of exhaust paths. [Effect of the invention]
根據本發明,可縮短直至基板之減壓乾燥完成為止的時間亦即節拍時間(tact time)。According to the present invention, the time until the reduced-pressure drying of the substrate is completed, that is, the tact time can be shortened.
以下,參閱附加圖面,說明關於本發明之實施形態。另外,在本說明書及圖面中,對於具有實質相同功能構成的構成要素,係賦予相同符號而省略重複說明。又,並非藉由以下所示之實施形態來加以限定該發明。Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. In this specification and the drawings, the same reference numerals are given to the constituent elements having substantially the same functional configuration, and redundant description is omitted. The invention is not limited to the embodiments described below.
(第1實施形態) 圖1,係表示本發明之實施形態之減壓乾燥裝置之概略構成的圖;圖1(A),係表示減壓乾燥裝置之構成之概略的示意剖面圖;圖1(B),係表示減壓乾燥裝置內之構成之概略的示意上視圖。另外,在圖1(B),係省略後述之頂板等的圖示。(First Embodiment) FIG. 1 is a diagram showing a schematic configuration of a vacuum drying apparatus according to an embodiment of the present invention; FIG. 1 (A) is a schematic cross-sectional view showing a structure of the vacuum drying apparatus; FIG. 1 (B) is a schematic top view which shows the outline of the structure in a vacuum drying apparatus. In addition, in FIG.1 (B), illustration of the top plate etc. mentioned later is abbreviate | omitted.
本實施形態之減壓乾燥裝置,係在減壓狀態下,使以噴墨方式被塗佈於基板之表面的有機材料膜中之溶媒乾燥者,本裝置之處理對象基板的基板,係例如有機EL顯示器用之玻璃基板。 另外,塗佈於本裝置之處理對象的基板之溶液,係由溶質與溶媒所構成,成為減壓乾燥處理之對象的成分,係主要為溶媒。作為溶媒所含有之有機化合物,係大多為高沸點者,例如可列舉出1,3-二甲基-2-四氫咪唑酮(1,3-dimethyl-2-imidazolidinone、沸點220℃、熔點8℃)、4-tert-丁基苯甲醚(4-tert-Butylanisole、沸點222℃、熔點18℃)、Trans-茴香腦(Trans-Anethole、沸點235℃、熔點20℃)、1,2-二甲氧苯(1,2-Dimethoxybenzene、沸點206.7℃、熔點22.5℃)、2-甲氧基聯苯(2-Methoxybiphenyl、沸點274℃、熔點28℃)、二苯醚(Phenyl Ether、沸點258.3℃、熔點28℃)、2-乙氧基萘(2-Ethoxynaphthalene、沸點282℃、熔點35℃)、苄基苯基醚(Benzyl Phenyl Ether、沸點288℃、熔點39℃)、2,6-二甲氧基甲苯(2,6-Dimethoxytoluene、沸點222℃、熔點39℃)、2-丙氧基萘(2-Propoxynaphthalene、沸點305℃、熔點40℃)、1,2,3-三甲氧基苯(1,2,3-Trimethoxybenzene、沸點235℃、熔點45℃)、環己苯(cyclohexylbenzene、沸點237.5℃、熔點5℃)、十二烷基苯(dodecylbenzene、沸點288℃、熔點-7℃)、1,2,3,4-四甲基苯(1,2,3,4-tetramethylbenzene、沸點203℃、熔點76℃)等。該些高沸點有機化合物,係亦有將2種以上組合而混合於溶液中的情況。The reduced-pressure drying device of this embodiment is a method for drying a solvent in an organic material film coated on the surface of a substrate by an inkjet method in a reduced-pressure state. The substrate of the substrate to be processed by the device is, for example, organic Glass substrate for EL displays. In addition, the solution applied to the substrate of the processing target of the device is composed of a solute and a solvent, and is a component of the target of the reduced-pressure drying treatment, which is mainly a solvent. The organic compounds contained in the solvent are mostly those having a high boiling point. For example, 1,3-dimethyl-2-imidazolidinone (boiling point 220 ° C, melting point 8) ℃), 4-tert-Butylanisole (4-tert-Butylanisole, boiling point 222 ° C, melting point 18 ° C), Trans-Anethole (Trans-Anethole, boiling point 235 ° C, melting point 20 ° C), 1,2- Dimethoxybenzene (1,2-Dimethoxybenzene, boiling point 206.7 ° C, melting point 22.5 ° C), 2-methoxybiphenyl (2-Methoxybiphenyl, boiling point 274 ° C, melting point 28 ° C), diphenyl ether (Phenyl Ether, boiling point 258.3 ℃, melting point 28 ° C), 2-ethoxynaphthalene (boiling point 282 ° C, melting point 35 ° C), benzyl phenyl ether (Benzyl Phenyl Ether, boiling point 288 ° C, melting point 39 ° C), 2,6- Dimethoxytoluene (2,6-Dimethoxytoluene, boiling point 222 ° C, melting point 39 ° C), 2-propoxynaphthalene (boiling point 305 ° C, melting point 40 ° C), 1,2,3-trimethoxy Benzene (1,2,3-Trimethoxybenzene, boiling point 235 ° C, melting point 45 ° C), cyclohexylbenzene (boiling point 237.5 ° C, melting point 5 ° C), dodecylbenzene (boiling point 288 ° C, melting point -7 ° C) ),1 , 2,3,4-tetramethylbenzene (1,2,3,4-tetramethylbenzene, boiling point 203 ° C, melting point 76 ° C) and so on. These high-boiling organic compounds may be mixed in a solution in a combination of two or more kinds.
本實施形態之減壓乾燥裝置,係如圖1(A)及圖1(B)所示般,具備有腔室10、載置台20及複數個排氣管30,並被連接於排氣裝置P。As shown in FIGS. 1 (A) and 1 (B), the vacuum drying device of this embodiment includes a chamber 10, a mounting table 20, and a plurality of exhaust pipes 30, and is connected to the exhaust device. P.
腔室10,係被構成為氣密者,由不銹鋼等的金屬材料所形成。腔室10,係具有:角筒狀之本體部11;頂板12,被安裝於本體部11之上側;及底板13,被安裝於本體部11之下側。The chamber 10 is configured as an airtight, and is formed of a metallic material such as stainless steel. The chamber 10 includes a rectangular cylindrical body portion 11, a top plate 12 attached to the upper side of the body portion 11, and a bottom plate 13 attached to the lower side of the body portion 11.
本體部11,係設置有用以將基板W搬入搬出至腔室10內之未圖示的搬入搬出口。 頂板12,係封閉本體部11之上側的開口者。The main body portion 11 is provided with a loading / unloading port (not shown) for loading and unloading the substrate W into and out of the chamber 10. The top plate 12 closes the opening on the upper side of the main body portion 11.
底板13,係封閉本體部11之下側的開口者,在底板13之上側的中央,係配設有載置台20。又,在底板13,以包圍載置台20之外周的方式,設置有複數個開口13a、13b。在本例中,開口13a、13b,係沿著載置台20之一邊設置有6個,且沿著與上述一邊對向的邊設置有6個,合計12個。 又,分別相對於開口13a連通有排氣管30。The bottom plate 13 closes the opening on the lower side of the main body portion 11, and a mounting table 20 is arranged at the center on the upper side of the bottom plate 13. Further, the bottom plate 13 is provided with a plurality of openings 13a and 13b so as to surround the outer periphery of the mounting table 20. In this example, six openings 13a and 13b are provided along one side of the mounting table 20, and six along the side opposite to the above side, for a total of twelve. The exhaust pipes 30 communicate with the openings 13a, respectively.
載置台20,係載置基板W者。在載置台20,係設置有進行基板W的收授之未圖示的升降銷,該升降銷,係可藉由升降機構上下自由移動。The mounting table 20 is a substrate on which the substrate W is mounted. The mounting table 20 is provided with a lifting pin (not shown) for receiving and receiving the substrate W, and the lifting pin is freely movable up and down by a lifting mechanism.
複數個排氣管30,係分別連接腔室10與排氣裝置P者。藉由排氣管30與底板13之開口13a、13b,構成本發明之「排氣路徑」。另外,排氣路徑,係連接腔室10內之基板收容空間與排氣裝置P者。在減壓乾燥裝置1中,係經由構成上述「排氣路徑」之排氣管30及開口13a、13b,藉由排氣裝置P對腔室10內進行減壓。The plurality of exhaust pipes 30 are connected to the chamber 10 and the exhaust device P, respectively. The "exhaust path" of the present invention is constituted by the exhaust pipe 30 and the openings 13a and 13b of the bottom plate 13. The exhaust path connects the substrate accommodation space in the chamber 10 and the exhaust device P. In the reduced-pressure drying device 1, the inside of the chamber 10 is decompressed by the exhaust device P through the exhaust pipe 30 and the openings 13a and 13b constituting the "exhaust path" described above.
另外,排氣裝置P,係由真空泵所構成,具體而言,係將渦輪分子泵與乾式泵例如從上游側依序串聯連接而構成。該排氣裝置P,係相對於各排氣路徑,具體而言相對於排氣管30各配設1個。The exhaust device P is constituted by a vacuum pump, specifically, a turbo molecular pump and a dry pump are sequentially connected in series from the upstream side, for example. This exhaust device P is provided for each exhaust path, specifically for each exhaust pipe 30.
又,排氣管30,係分別具有作為開關自如地封閉該排氣管30之封閉構件的自動壓力控制閥(APC(Adaptive Pressure Control)閥)31。換言之,在排氣管30的開口13a、13b與排氣裝置P之間的部分,係設置有APC閥31。在減壓乾燥裝置1中,係在使排氣裝置P作動的狀態下,調節APC閥31之開合度,藉此,可控制減壓排氣之際之腔室10內的真空度/壓力,並控制基板W的乾燥速度。The exhaust pipe 30 includes an automatic pressure control valve (APC (Adaptive Pressure Control) Valve) 31 as a closing member that can freely close the exhaust pipe 30 by a switch. In other words, an APC valve 31 is provided in a portion between the openings 13 a and 13 b of the exhaust pipe 30 and the exhaust device P. In the reduced-pressure drying device 1, the opening and closing degree of the APC valve 31 is adjusted in a state where the exhaust device P is activated, thereby controlling the vacuum degree / pressure in the chamber 10 during the reduced-pressure exhaust. And the drying speed of the substrate W is controlled.
另外,減壓乾燥裝置1,係具有測定腔室10內的壓力之未圖示的壓力計。該壓力計之計測結果,係作為電性信號被輸入至APC閥31或後述的控制部40。The reduced-pressure drying device 1 is a pressure gauge (not shown) that measures the pressure in the chamber 10. The measurement result of this pressure gauge is input as an electrical signal to the APC valve 31 or a control unit 40 described later.
而且,僅複數個排氣管30中之一部分,在APC閥31之下游具有溶媒捕集部32,該溶媒捕集部32,係捕集從藉由噴墨方式被塗佈於基板W上之溶媒氣化的溶媒。具體而言,在對於複數個排氣管30中之接近載置台20上之基板W的角部之開口13a所設置的排氣管30,係不設置溶媒捕集部32,在對於遠離上述角部之開口13b所設置的排氣管30,係設置有溶媒捕集部32。In addition, only a part of the plurality of exhaust pipes 30 has a solvent trapping section 32 downstream of the APC valve 31. The solvent trapping section 32 captures the solvent that is applied to the substrate W by an inkjet method. Solvent vaporized solvent. Specifically, the exhaust pipe 30 provided to the opening 13 a of the plurality of exhaust pipes 30 that is close to the corner of the substrate W on the mounting table 20 is not provided with the solvent trapping section 32. The exhaust pipe 30 provided in the opening 13b of the section is provided with a solvent trapping section 32.
亦即,複數個排氣路徑,係包含有:有溶媒捕集部之排氣路徑,在APC閥31之下游,設置有溶媒捕集部32;及無溶媒捕集部之排氣路徑,未設置有溶媒捕集部32。又,有溶媒捕集部之排氣路徑之腔室10側的端部亦即開口13a,係比起無溶媒捕集部之排氣路徑10側的端部亦即開口13b,更遠離被收容於腔室10內並載置於載置台20上之晶圓W的角部。That is, the plurality of exhaust paths include: an exhaust path with a solvent trapping section, and a downstream of the APC valve 31, a solvent trapping section 32; and an exhaust path without a solvent trapping section. A solvent trapping section 32 is provided. In addition, the opening 13a on the side of the chamber 10 side of the exhaust path having the solvent trapping portion is more open than the opening 13b on the side of the exhaust path 10 side without the solvent trapping portion. The corners of the wafer W placed in the chamber 10 and placed on the mounting table 20.
溶媒捕集部32,係具有開口被均勻地形成為格子狀之形狀的薄板亦即網狀板(未圖示),以便可一面使從腔室10內所排出之氣體通過,一面捕集氣體中之溶媒。上述網狀板,係由不銹鋼或鋁、銅、金這樣的金屬材料所形成,例如藉由對鋼板進行冷切割(cold cut)所製造的展成金屬(expand metal)所構成。 溶媒捕集部32所具有之網狀板,係亦可為1片,或亦可層積複數片。又,網狀板,係被形成為其外徑與排氣管30之內徑大致相等。The solvent trapping portion 32 is a thin plate, that is, a mesh plate (not shown), whose openings are uniformly formed into a grid shape, so that the gas discharged from the chamber 10 can be passed through while trapping the gas. The solvent. The mesh plate is formed of a stainless steel or a metal material such as aluminum, copper, or gold, and is made of, for example, an expanded metal produced by cold cutting a steel plate. The reticular plate of the tritium solvent collection unit 32 may be one sheet, or a plurality of sheets may be laminated. The mesh plate is formed so that its outer diameter is substantially equal to the inner diameter of the exhaust pipe 30.
具有以上之各部的減壓乾燥裝置1,係更具備有:控制部40,控制APC閥31等。控制部40,係例如電腦,具有程式儲存部(未圖示)。在程式儲存部,係儲存有控制減壓乾燥裝置1中之減壓乾燥處理的程式。另外,前述程式,係例如亦可為被記錄於電腦可讀取之硬碟(HD)、軟碟片(FD)、光碟(CD)、磁光碟(MO)、記憶卡等的電腦可讀取之記憶媒體者,且亦可為從該記憶媒體安裝於控制部40者。 該控制部40,係亦可進行排氣裝置P之控制。The reduced-pressure drying apparatus 1 having the above-mentioned sections further includes a control section 40, an APC valve 31, and the like. The control unit 40 is, for example, a computer, and includes a program storage unit (not shown). In the program storage section, a program for controlling the reduced-pressure drying process in the reduced-pressure drying device 1 is stored. In addition, the aforementioned programs can be read by a computer that can be recorded on a computer-readable hard disk (HD), floppy disk (FD), optical disk (CD), magneto-optical disk (MO), memory card, etc. It is also possible to use a storage medium from the storage medium to the control unit 40. The control unit 40 can also perform control of the exhaust device P.
接著,說明關於使用了減壓乾燥裝置1之減壓乾燥處理。Next, a reduced-pressure drying process using the reduced-pressure drying device 1 will be described.
(基板搬入步驟) 在使用了減壓乾燥裝置1之減壓乾燥處理中,係首先,將以噴墨方式塗佈了處理液的基板W載置於載置台20。(Substrate carrying-in step) (1) In the reduced-pressure drying process using the reduced-pressure drying device 1, first, the substrate W on which the processing liquid is applied by the inkjet method is placed on the mounting table 20.
(基板乾燥步驟) 其次,在使排氣裝置P之乾式泵作動的狀態下,對於複數個排氣管30中之至少設置有溶媒捕集部32的排氣管30(以下,有溶媒捕集部之排氣管30),在本例中,係對於所有的排氣管30,使APC閥31成為開啟狀態,開始腔室10內的減壓排氣。乾式泵所致之減壓排氣,係進行直至腔室10內之壓力成為例如10Pa為止。 其後,使排氣裝置P之渦輪分子泵作動,而進一步進行減壓排氣。 藉由更進一步減壓排氣,若腔室10內之壓力成為基板W的溫度中之溶媒的蒸氣壓以下(基板W之溫度為23℃的情況下,0.2Pa以下)時,則基板W上之溶媒S的蒸發速度變大。 又,在減壓排氣之際,腔室10內之氣體被絕熱膨脹並冷卻,藉由像這樣經冷卻之腔室10內的氣體,溶媒捕集部32之溫度下降。具體而言,係在腔室10內之壓力被減壓至0.2Pa的時點,溶媒捕集部32,係被冷卻至5~12℃。該5~12℃,係小於0.2Pa中之溶媒的露點即23℃。 又,溶媒捕集部32之溫度,係在直至基板W上之溶媒S的蒸發完成為止之間,被維持於各時點之腔室10內的壓力之溶媒S的露點以下。 因此,由於從基板W氣化之溶媒,係藉由溶媒捕集部32被高效率地捕集,因此,腔室10內之氣體狀的溶媒之濃度,係被維持為較低。因此,可快速地去除基板上W上的溶媒。 另外,作為用以像上述般地使溶媒捕集部32之溫度維持於上述露點以下的方法,考慮使用熱容量較小者作為溶媒捕集部32之網狀板的方法。 又,該基板乾燥步驟,係進行直至基板W乾燥為止,例如直至腔室10內之壓力成為第1預定值以下為止,或直至從排氣裝置P之渦輪分子泵的作動開始經過第2預定時間為止。(Substrate drying step) Next, in a state where the dry pump of the exhaust device P is operated, at least an exhaust pipe 30 (hereinafter, there is a solvent trap) provided with a solvent trapping section 32 among the plurality of exhaust pipes 30 In this example, the APC valve 31 is opened for all the exhaust pipes 30, and the reduced-pressure exhaust in the chamber 10 is started. The reduced-pressure exhaust by the dry pump is performed until the pressure in the chamber 10 becomes, for example, 10 Pa. Thereafter, the turbo molecular pump of the exhaust device P is operated to further decompress the exhaust gas. By further depressurizing the exhaust, if the pressure in the chamber 10 becomes the vapor pressure of the solvent at the temperature of the substrate W or less (in the case where the temperature of the substrate W is 23 ° C, 0.2 Pa or less), the The evaporation rate of the solvent S is increased. In addition, when the gas is decompressed and exhausted, the gas in the chamber 10 is adiabatically expanded and cooled, and the temperature of the solvent trapping unit 32 is lowered by the gas in the cooled chamber 10 as described above. Specifically, when the pressure in the chamber 10 is reduced to 0.2 Pa, the solvent trapping unit 32 is cooled to 5 to 12 ° C. The temperature of 5-12 ° C is 23 ° C which is the dew point of the solvent less than 0.2Pa. In addition, the temperature of the solvent collection unit 32 is maintained below the dew point of the solvent S under the pressure in the chamber 10 at each point in time until the evaporation of the solvent S on the substrate W is completed. Therefore, since the solvent vaporized from the substrate W is efficiently captured by the solvent trapping unit 32, the concentration of the gaseous solvent in the chamber 10 is kept low. Therefore, the solvent on W on the substrate can be quickly removed. In addition, as a method for maintaining the temperature of the solvent collection unit 32 below the dew point as described above, a method using a smaller heat capacity as the mesh plate of the solvent collection unit 32 is considered. The substrate drying step is performed until the substrate W is dried, for example, until the pressure in the chamber 10 becomes equal to or lower than the first predetermined value, or until the second predetermined time has elapsed since the operation of the turbo molecular pump of the exhaust device P started. until.
(腔室乾燥步驟) 基板乾燥步驟後,對於有溶媒捕集部之排氣管30,係使APC閥31成為關閉狀態,對於未設置溶媒捕集部32之排氣管30(以下,無溶媒捕集部之排氣管30),係使APC閥31維持在開啟狀態。 該腔室乾燥步驟,係進行例如直至腔室10內之溶媒成為預定量以下為止,亦即直至腔室內之壓力成為第2預定值以下為止,或直至從排氣裝置P之渦輪分子泵的作動開始經過第2預定時間為止。另外,第2預定值或第2預定時間,係指在使腔室10內之壓力回到大氣壓時,殘留於腔室10內之溶媒不會再附著於基板W的值或時間。(Chamber drying step) After the substrate drying step, the APC valve 31 is closed for the exhaust pipe 30 having the solvent trapping section, and the exhaust pipe 30 (hereinafter, no solvent is not provided for the solvent trapping section 32). The exhaust pipe 30) of the trapping section keeps the APC valve 31 in an open state. This chamber drying step is performed, for example, until the solvent in the chamber 10 becomes less than a predetermined amount, that is, until the pressure in the chamber becomes less than a second predetermined value, or until the operation of the turbo molecular pump of the exhaust device P is performed. The second scheduled time starts. The second predetermined value or the second predetermined time is a value or time during which the solvent remaining in the chamber 10 does not adhere to the substrate W when the pressure in the chamber 10 is returned to atmospheric pressure.
(溶媒捕集部乾燥步驟) 在腔室乾燥步驟之際,溶媒捕集部乾燥步驟亦同時被進行。在溶媒捕集部乾燥步驟中,係利用來自排氣管30之側壁或渦輪分子泵等的熱輻射,加熱溶媒捕集部32並使其乾燥。例如,溶媒捕集部32之溫度,係藉由上述熱輻射,上升至其時點之排氣管30內的壓力之溶媒的露點以上(當排氣管30內之壓力為0.05Pa的情況下,18~23℃以上)。因此,可從溶媒捕集部32快速去除/脫離溶媒,並使溶媒捕集部32乾燥。(Drying step of solvent trapping section) During the drying step of the chamber, the drying step of the solvent trapping section is also performed at the same time. In the solvent trapping section drying step, the solvent trapping section 32 is heated and dried by using heat radiation from a side wall of the exhaust pipe 30 or a turbo molecular pump or the like. For example, the temperature of the solvent trapping part 32 is the dew point of the solvent which rises to the pressure in the exhaust pipe 30 at that time by the above-mentioned heat radiation (when the pressure in the exhaust pipe 30 is 0.05 Pa, 18 ~ 23 ℃). Therefore, the solvent can be quickly removed / detached from the solvent collection unit 32 and the solvent collection unit 32 can be dried.
(基板搬出步驟) 在腔室乾燥步驟及溶媒捕集部乾燥步驟結束後,對於所有的排氣管30,使APC閥31成為關閉狀態,其後,使腔室10內之壓力回到大氣壓,並將基板W從腔室10搬出。(Substrate removal step) 后 After the chamber drying step and the solvent trapping section drying step are completed, the APC valve 31 is closed for all the exhaust pipes 30, and then the pressure in the chamber 10 is returned to atmospheric pressure. The substrate W is carried out from the chamber 10.
在該基板搬出步驟後,停止排氣裝置P之渦輪分子泵,並從基板搬入步驟依序重複各步驟。After the substrate carrying-out step, the turbo molecular pump of the exhaust device P is stopped, and the steps are sequentially repeated from the substrate carrying-in step.
如上述般,在減壓乾燥裝置1中,係僅複數個排氣管30中之一部分,在APC閥31之下游具有溶媒捕集部32。因此,可依序進行基板乾燥步驟與腔室乾燥步驟,該基板乾燥步驟,係對於複數個排氣管30中之有溶媒捕集部之排氣管30,使APC閥31成為開啟狀態,該腔室乾燥步驟,係對於複數個排氣管30中之有溶媒捕集部之排氣管30,使APC閥31成為關閉狀態,並對於無溶媒捕集部之排氣管30,維持APC閥31之開啟狀態。因此,具有以下的效果。As described above, in the reduced-pressure drying apparatus 1, only a part of the plurality of exhaust pipes 30 is provided, and the solvent trap portion 32 is provided downstream of the APC valve 31. Therefore, the substrate drying step and the chamber drying step can be sequentially performed. The substrate drying step is to open the APC valve 31 to the exhaust pipe 30 of the plurality of exhaust pipes 30 having a solvent trapping section. The chamber drying step is to close the APC valve 31 to the exhaust pipe 30 having the solvent trapping section among the plurality of exhaust pipes 30, and to maintain the APC valve for the exhaust pipe 30 having no solvent trapping section. Open state of 31. Therefore, it has the following effects.
圖2,係說明減壓乾燥裝置1之效果的圖,橫軸,係表示從排氣開始起的經過時間,具體而言,係腔室10內之壓力在大氣壓的狀態下,使APC閥31成為開啟狀態後的經過時間,縱軸,係表示腔室10內之壓力。FIG. 2 is a diagram illustrating the effect of the decompression drying device 1. The horizontal axis represents the elapsed time from the start of exhaust. Specifically, the pressure in the chamber 10 is at the atmospheric pressure, and the APC valve 31 is set. The elapsed time after the state is turned on, the vertical axis indicates the pressure in the chamber 10.
(案例1) 在減壓乾燥裝置1中,當所有的複數個排氣管30不具有溶媒捕集部32的情況下,即便對於所有的排氣管30,使APC閥31成為開啟狀態,亦如圖2所示般,雖在腔室10內之壓力被維持為較高的狀態(約1Pa)後,逐漸地下降,但直至腔室10內之壓力成為前述的第2預定值(例如0.09Pa)以下為止需要花費140秒以上。(Case 1) In the reduced-pressure drying device 1, when all the plurality of exhaust pipes 30 do not have the solvent trapping section 32, even if the APC valves 31 are opened for all the exhaust pipes 30, As shown in FIG. 2, after the pressure in the chamber 10 is maintained at a relatively high state (about 1 Pa), it gradually decreases, but until the pressure in the chamber 10 reaches the aforementioned second predetermined value (for example, 0.09). Pa) It takes more than 140 seconds for the following.
(案例2) 在減壓乾燥裝置1中,當所有的複數個排氣管30具有溶媒捕集部32的情況下,即便對於所有的排氣管30,使APC閥31成為開啟狀態,亦可使腔室10內之壓力比起上述案例1更快速地下降至0.2Pa左右。但是,即便為經過了200秒的時點,亦無法使腔室10內之壓力成為前述的第2預定值(0.09Pa)以下。(Case 2) In the reduced-pressure drying apparatus 1, when all of the plurality of exhaust pipes 30 have a solvent trapping section 32, the APC valve 31 may be opened for all the exhaust pipes 30. The pressure in the chamber 10 is lowered to about 0.2 Pa more rapidly than in the case 1 described above. However, even when 200 seconds have elapsed, the pressure in the chamber 10 cannot be reduced to the aforementioned second predetermined value (0.09 Pa) or less.
對此,僅複數個排氣管30中之一部分,在APC閥31之下游具有溶媒捕集部32,進行基板乾燥步驟約80秒,其後,進行腔室乾燥步驟,該基板乾燥步驟,係對於包含有溶媒捕集部之排氣管30的所有排氣管30,使APC閥31成為開啟狀態,該腔室乾燥步驟,係對於有溶媒捕集部之排氣管30,使APC閥31成為關閉狀態,並對於無溶媒捕集部之排氣管30,維持APC閥31之開啟狀態。在該情況下,以與案例1相同的速度,可使腔室10內之壓力下降至0.2Pa,而且,不僅可使腔室10內之壓力成為前述的第2預定值以下,且直至成為第2預定值以下為止僅需要花費約85秒。 在像這樣地使用了減壓乾燥裝置1的減壓乾燥步驟中,係可使腔室10內之壓力迅速地下降至前述的第2預定值以下。In this regard, only a part of the plurality of exhaust pipes 30 has a solvent trapping section 32 downstream of the APC valve 31, and a substrate drying step is performed for about 80 seconds. Thereafter, a chamber drying step is performed. The APC valve 31 is opened for all the exhaust pipes 30 including the exhaust pipe 30 including the solvent trapping portion. This chamber drying step is performed by using the APC valve 31 for the exhaust pipe 30 having the solvent trapping portion. The closed state is maintained, and the open state of the APC valve 31 is maintained with respect to the exhaust pipe 30 of the non-solvent trapping section. In this case, the pressure in the chamber 10 can be reduced to 0.2 Pa at the same speed as in Case 1, and the pressure in the chamber 10 can be made not only below the second predetermined value but also until the first 2 It only takes about 85 seconds to reach the predetermined value. (2) In the reduced-pressure drying step using the reduced-pressure drying device 1 as described above, the pressure in the chamber 10 can be rapidly reduced to the aforementioned second predetermined value or less.
又,在減壓乾燥裝置1,係具有以下的效果。當對俯視圖呈四角形狀之基板W進行減壓乾燥的情況下, 基板W之角部比起其他部分更容易乾燥。但是,基板W之乾燥時間,係在同一基板內均勻為較佳。又,比起基板中之遠離設置有溶媒捕集部32之排氣管30的部分,接近設置有溶媒捕集部32之排氣管30的部分者更容易乾燥。因此,在減壓乾燥裝置1中,係僅在對於複數個排氣管30中之遠離載置台20上之基板W的角部之開口13b所設置的排氣管30,設置有溶媒捕集部32。藉此,即便不使APC閥31之開合度依每個排氣管30不同,亦可提高基板W之乾燥時間的面內均勻性。The reduced-pressure drying device 1 has the following effects. When the substrate W having a quadrangular shape in plan view is dried under reduced pressure, the corners of the substrate W are more easily dried than other portions. However, it is preferable that the drying time of the substrate W is uniform within the same substrate. In addition, the portion closer to the exhaust pipe 30 provided with the solvent collecting portion 32 than the portion remote from the exhaust pipe 30 provided with the solvent collecting portion 32 in the substrate is more easily dried. Therefore, in the reduced-pressure drying apparatus 1, a solvent trap portion is provided only in the exhaust pipe 30 provided in the opening 13 b of the corner portion of the plurality of exhaust pipes 30 that is remote from the substrate W on the mounting table 20. 32. Thereby, even if the opening and closing degree of the APC valve 31 is not changed for each exhaust pipe 30, the in-plane uniformity of the drying time of the substrate W can be improved.
圖3,係表示減壓乾燥裝置1的其他例中之關於溶媒捕集部32之構造的圖。 在前述的例子中,溶媒捕集部32之冷卻或升溫亦即加熱,係藉由在減壓時絕熱膨脹而冷卻之腔室10內的氣體或來自排氣管30等的熱輻射加以進行。FIG. 3 is a diagram showing a structure of a solvent trapping unit 32 in another example of the reduced-pressure drying apparatus 1. In the foregoing example, the cooling or heating of the solvent trapping unit 32, that is, heating is performed by the gas in the chamber 10 cooled by adiabatic expansion during decompression or heat radiation from the exhaust pipe 30 or the like.
取而代之,亦可設成為如圖3所示般,將具備複數個冷媒管50作為冷卻及加熱溶媒捕集部32之溫度可變機構的構成,並藉由溶接等,將該些冷媒管50固定於捕集溶媒的網狀板32a,使冷卻之冷媒與加熱之冷媒可切換地流動,藉此,冷卻及加熱溶媒捕集部32亦即網狀板32a。藉此,可更迅速且適當地冷卻/加熱溶媒捕集部32。Alternatively, it may be configured as shown in FIG. 3, and a plurality of refrigerant pipes 50 may be used as a temperature-varying mechanism for cooling and heating the solvent trapping unit 32, and the refrigerant pipes 50 may be fixed by welding or the like. The cooling plate and the heated cooling medium are alternately flowed on the mesh plate 32a that collects the solvent, thereby cooling and heating the solvent collecting portion 32, that is, the mesh plate 32a. Thereby, the solvent collection part 32 can be cooled / heated more quickly and appropriately.
另外,當像這樣地將溫度可變機構設置於減壓乾燥裝置1的情況下,在前述的基板乾燥步驟中,藉由上述溫度可變機構冷卻溶媒捕集部32為較佳。因為藉此可縮短基板乾燥步驟所需的時間。 又,當設置有溫度可變機構的情況下,在與前述之腔室乾燥步驟同時被進行的溶媒捕集部乾燥步驟中,以上述溫度可變機構加熱溶媒捕集部32為較佳。因為藉此可縮短溶媒捕集部乾燥步驟所需的時間。When the temperature-variable mechanism is provided in the reduced-pressure drying device 1 as described above, in the substrate drying step described above, it is preferable to cool the solvent collection unit 32 by the temperature-variable mechanism. This can shorten the time required for the substrate drying step. In the case where a temperature-variable mechanism is provided, it is preferable that the solvent-trapping unit 32 is heated by the temperature-variable mechanism in the solvent-trapping unit drying step performed simultaneously with the chamber drying step. This can shorten the time required for the drying step of the solvent trapping section.
圖4,係為了說明封閉構件之其他例,表示設置有封閉構件之排氣管30之周邊之態樣的圖,且僅表示排氣管30之剖面。 在前述的例中,雖然減壓乾燥裝置1具有可調節開合度之APC閥31作為「封閉構件」,但如圖4所示般,亦可具有雖無法調節開合度而開關自如地封閉排氣管30之擋板60作為「封閉構件」。在圖4的例中,擋板60,係以鉸鏈方式被安裝於排氣管30。該擋板60,係藉由控制部40予以控制。FIG. 4 is a view showing the state of the periphery of the exhaust pipe 30 provided with the closing member for explaining another example of the closing member, and only shows a cross section of the exhaust pipe 30. In the aforementioned example, although the decompression drying device 1 has the APC valve 31 whose opening and closing degree can be adjusted as a "closed member", as shown in Fig. 4, it is also possible to have the opening and closing of the exhaust gas freely closed although the opening and closing degree cannot be adjusted The baffle 60 of the tube 30 serves as a "closed member". In the example of FIG. 4, the baffle 60 is hingedly attached to the exhaust pipe 30. The baffle 60 is controlled by the control unit 40.
又,在具有擋板60的構成中,係可藉由調整使擋板60成為開啟狀態之排氣管30的數量之方式,控制腔室10內的減壓速度。例如,在具有擋板60的構成中,當必需降低基板乾燥步驟之前半部分的減壓速度而在後半部分提高的情況,係首先,對於有溶媒捕集部之排氣管30,維持使擋板60成為關閉狀態,對於無溶媒捕集部之排氣管30,使擋板60成為開啟狀態,並在無需降低減壓速度後,對於有溶媒捕集部之排氣管30,亦使擋板60成為開啟狀態。又,例如,在具有擋板60的構成中,當必需提高基板乾燥步驟之前半部分的減壓速度而在後半部分降低的情況,係首先,對於所有的排氣管30,使擋板60成為開啟狀態,並在必需降低減壓速度後,僅對於有溶媒捕集部之排氣管30,使擋板60維持開啟狀態,對於無溶媒捕集部之排氣管30,使擋板60成為關閉狀態。In addition, in the configuration having the baffle 60, the pressure reduction speed in the chamber 10 can be controlled by adjusting the number of the exhaust pipes 30 that make the baffle 60 into an open state. For example, in the configuration having the baffle 60, when it is necessary to reduce the decompression speed in the first half of the substrate drying step and increase it in the second half, first, the exhaust pipe 30 having the solvent trapping section is maintained at The plate 60 is turned off, and the baffle 60 is turned on for the exhaust pipe 30 without the solvent trapping section. After the decompression speed does not need to be reduced, the exhaust pipe 30 with the solvent trapping section is also turned off. The plate 60 is turned on. Also, for example, in a configuration having a baffle 60, when it is necessary to increase the decompression speed in the first half of the substrate drying step and decrease it in the second half, first, for all the exhaust pipes 30, the baffle 60 is made In the opened state, and after it is necessary to reduce the decompression speed, the baffle 60 is maintained in the open state only for the exhaust pipe 30 with the solvent trapping portion, and the baffle 60 becomes the exhaust pipe 30 without the solvent trapping portion. Disabled.
圖5,係表示腔室10之底板13之其他例的圖。 在前述的例中,底板13,係沿著載置台20之一邊設置有複數個開口13a、13b,且沿著與上述一邊對向的邊設置相同個數。但是,底板13,係不限於該例,如圖5所示般,亦可沿著載置台20之各邊逐一設置相同個數。 又,在以上的例中,設置於底板13之開口13a、13b的個數雖為12個,但只要是複數個即可,亦可未滿12個或多於12個。 又,分別相對於開口13a、13b連通有排氣管30。FIG. 5 is a diagram showing another example of the bottom plate 13 of the chamber 10. In the aforementioned example, the bottom plate 13 is provided with a plurality of openings 13a, 13b along one side of the mounting table 20, and the same number is provided along the side opposite to the above side. However, the bottom plate 13 is not limited to this example, and as shown in FIG. 5, the same number may be provided one by one along each side of the mounting table 20. In addition, in the above example, although the number of the openings 13a, 13b provided in the bottom plate 13 is twelve, as long as it is plural, it may be less than twelve or more. The exhaust pipe 30 is connected to each of the openings 13a and 13b.
圖6,係表示減壓乾燥裝置1之排氣管線之其他例的側面圖,且僅表示腔室10的底板13與排氣管線。 在前述的例中,減壓乾燥裝置1之排氣管線,係排氣管30分別連接有1個排氣裝置P的構成。但是,減壓乾燥裝置1之排氣管線,係不限於該例,如圖6所示,亦可為複數個排氣管30共同使用1個排氣裝置P的構成。FIG. 6 is a side view showing another example of the exhaust line of the vacuum drying device 1, and shows only the bottom plate 13 and the exhaust line of the chamber 10. In the foregoing example, the exhaust line of the vacuum drying device 1 is configured such that one exhaust device P is connected to the exhaust pipe 30. However, the exhaust line of the reduced-pressure drying device 1 is not limited to this example, and as shown in FIG. 6, a configuration in which one exhaust device P is commonly used for a plurality of exhaust pipes 30 may be used.
亦在該情況下,僅複數個排氣管30中之一部分,在APC閥31之下游設置溶媒捕集部32,並與前述相同地,進行基板乾燥步驟與腔室乾燥步驟,藉此,比起在所有的複數個排氣管30設置溶媒捕集部32之構成或在複數個排氣管30的任一者皆不設置溶媒捕集部32之構成,可迅速地達成腔室10內之溶媒為少量的狀態,亦即達成腔室10內之壓力足夠低的狀態。Also in this case, only a part of the plurality of exhaust pipes 30 is provided with a solvent trapping section 32 downstream of the APC valve 31, and the substrate drying step and the chamber drying step are performed in the same manner as described above, thereby comparing with The configuration in which the solvent trapping section 32 is provided in all of the plurality of exhaust pipes 30 or the configuration in which the solvent trapping section 32 is not provided in any of the plurality of exhaust pipes 30 can be quickly achieved in the chamber 10. The solvent is in a small amount, that is, a state in which the pressure in the chamber 10 is sufficiently low is achieved.
圖7,係為了說明減壓乾燥裝置1之排氣管線的其他例,表示排氣管30之周邊之態樣的圖。 在前述的例中,雖係在減壓乾燥裝置1之排氣管線的排氣管30中,封閉構件與溶媒捕集部32之間並未設置任何構件,但如圖7所示般,亦可在封閉構件(在圖例中,係APC閥31)與溶媒捕集部32之間設置氣體供給部70,該氣體供給部70,係將促進被溶媒捕集部32捕集之溶媒之氣化的氣體供給至排氣管30內。FIG. 7 is a view showing the state of the periphery of the exhaust pipe 30 for explaining another example of the exhaust line of the vacuum drying device 1. In the foregoing example, although it is in the exhaust pipe 30 of the exhaust line of the vacuum drying device 1, no member is provided between the closing member and the solvent trapping section 32, but as shown in FIG. 7, A gas supply unit 70 may be provided between the closed member (in the illustration, APC valve 31) and the solvent collection unit 32. The gas supply unit 70 promotes the vaporization of the solvent captured by the solvent collection unit 32. The gas is supplied into the exhaust pipe 30.
當像這樣地設置了氣體供給部70的情況下,在前述的腔室乾燥步驟及溶媒捕集部乾燥步驟中,當對於有溶媒捕集部之排氣管30,使APC閥31成為關閉狀態之際,與此連動而開始供給氣體至氣體供給部70,亦即開始供給氣體至溶媒捕集部32為較佳。從該氣體供給部70供給之氣體,係例如惰性氣體。只要該氣體之供給量為排氣管30內之溶媒捕集部32之周邊的壓力不超過被捕集至溶媒捕集部32之溶媒之蒸氣壓的量,則可有效率地使溶媒捕集部32乾燥。When the gas supply unit 70 is provided as described above, in the chamber drying step and the solvent trapping section drying step described above, the APC valve 31 is closed for the exhaust pipe 30 having the solvent trapping section. In this case, it is preferable to start supplying gas to the gas supply unit 70 in conjunction with this, that is, to start supplying gas to the solvent collection unit 32. The gas supplied from the gas supply unit 70 is, for example, an inert gas. As long as the supply amount of the gas is such that the pressure around the solvent trapping portion 32 in the exhaust pipe 30 does not exceed the vapor pressure of the solvent trapped to the solvent trapping portion 32, the solvent trapping can be efficiently performed. Portion 32 is dry.
(其他變形例) 在以上的例中,係在基板乾燥步驟中之腔室10內的減壓排氣之際,對於所有的排氣管30,使APC閥31成為開啟狀態。但是,在基板乾燥步驟中,亦可僅對於複數個排氣管30中之有溶媒捕集部之排氣管30,使APC閥31成為開啟狀態。在該情況下,亦可在腔室10內之壓力變得小於預定值後,亦即在基板W之乾燥進行某程度後,使所有的APC閥31成為開啟狀態。 僅對於複數個排氣管30中之有溶媒捕集部之排氣管30,使APC閥31成為開啟狀態,藉此,依溶劑之不同,可使基板W更均勻地乾燥。在該情況下,基板W之乾燥所需的時間,雖係比從一開始使所有的排氣管30成為開啟狀態之情況更長,但在基板W之乾燥進行某程度後,使所有的APC閥31成為開啟狀態,藉此,可兼顧均勻地乾燥基板W與在短時間內進行基板W之乾燥。(Other Modifications) In the above example, when the reduced-pressure exhaust is performed in the chamber 10 in the substrate drying step, the APC valves 31 are opened for all the exhaust pipes 30. However, in the substrate drying step, the APC valve 31 may be opened only for the exhaust pipe 30 having the solvent trap portion among the plurality of exhaust pipes 30. In this case, all the APC valves 31 may be opened after the pressure in the chamber 10 becomes smaller than a predetermined value, that is, after the substrate W is dried to a certain degree. Only for the exhaust pipe 30 having the solvent trapping section among the plurality of exhaust pipes 30, the APC valve 31 is opened, whereby the substrate W can be dried more uniformly depending on the solvent. In this case, although the time required for drying the substrate W is longer than when all the exhaust pipes 30 are turned on from the beginning, all the APCs are made after the drying of the substrate W is performed to a certain degree. The valve 31 is in an opened state, whereby both the substrate W can be dried uniformly and the substrate W can be dried in a short time.
在以上的例中,係在溶媒捕集部乾燥步驟結束後,進行基板的搬出步驟。但是,只要為排氣管30分別設置有1個排氣裝置P的構成,則當溶媒捕集部乾燥步驟所需之時間比腔室乾燥步驟所需之時間長的情況下,係亦可在溶媒捕集部乾燥步驟結束之前,進行基板的搬出步驟或下個基板的搬入步驟。In the above example, the substrate carrying-out step is performed after the drying step of the solvent trapping section is completed. However, as long as one exhaust device P is provided for each of the exhaust pipes 30, when the time required for the drying step of the solvent trapping section is longer than the time required for the chamber drying step, the Before the completion of the drying step of the solvent trapping unit, a substrate carrying-out step or a next substrate carrying-in step is performed.
又,在以上的例中,APC閥31等的封閉構件,雖係被設置於排氣管30,但只要是對於排氣路徑進行設置即可,例如亦可設置於開口13a、13b內,又,亦可以封閉開口13a、13b的方式,設置於底板13之上面。 相同地,溶媒捕集部32,係只要位於上述封閉構件之下游,則亦可設置於開口13b內而非排氣管30。 [產業上之可利用性]In the above example, although the closing members such as the APC valve 31 are provided in the exhaust pipe 30, they may be provided in the exhaust path. For example, they may be provided in the openings 13a and 13b. It can also be arranged on the bottom plate 13 in a manner of closing the openings 13a, 13b. Similarly, the solvent trapping section 32 may be provided in the opening 13b instead of the exhaust pipe 30 as long as it is located downstream of the closed member. [Industrial availability]
本發明,係在對以噴墨方式塗佈有溶液之基板進行減壓乾燥的技術是有用的。The present invention is useful for a technique in which a substrate coated with a solution by an inkjet method is dried under reduced pressure.
1‧‧‧減壓乾燥裝置1‧‧‧ vacuum drying device
10‧‧‧處理容器10‧‧‧handling container
11‧‧‧本體部11‧‧‧Body
12‧‧‧頂板12‧‧‧ roof
13‧‧‧底板13‧‧‧ floor
13a、13b‧‧‧開口13a, 13b‧‧‧ opening
20‧‧‧載置台20‧‧‧mounting table
30‧‧‧排氣管30‧‧‧Exhaust pipe
31‧‧‧閥31‧‧‧ Valve
32‧‧‧溶媒捕集部32‧‧‧Solvent Capture Department
32a‧‧‧網狀板32a‧‧‧ mesh plate
40‧‧‧控制部40‧‧‧Control Department
50‧‧‧冷媒管50‧‧‧Refrigerant tube
60‧‧‧擋板60‧‧‧ bezel
[圖1]表示本發明之實施形態之減壓乾燥裝置之概略構成的圖。 [圖2]說明圖1之減壓乾燥裝置之效果的圖。 [圖3]表示減壓乾燥裝置的其他例中之關於溶媒捕集部之構造的圖。 [圖4]表示設置有其他例之封閉構件之排氣管之周邊之態樣的圖。 [圖5]表示腔室之底板之其他例的圖。 [圖6]表示減壓乾燥裝置之排氣管線之其他例的側視圖。 [圖7]表示減壓乾燥裝置之排氣管線之另一例的說明圖。[Fig. 1] A diagram showing a schematic configuration of a reduced-pressure drying apparatus according to an embodiment of the present invention. [Fig. 2] A diagram explaining the effect of the reduced-pressure drying device of Fig. 1. [Fig. [Fig. 3] A diagram showing the structure of a solvent trapping unit in another example of the vacuum drying apparatus. [Fig. 4] A diagram showing a state around the exhaust pipe provided with the closing member of another example. [Fig. 5] A diagram showing another example of the bottom plate of the chamber. [Fig. 6] A side view showing another example of the exhaust line of the vacuum drying device. [Fig. 7] An explanatory diagram showing another example of the exhaust line of the vacuum drying device.
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