TWI757662B - 晶圓重組及晶粒拼接 - Google Patents
晶圓重組及晶粒拼接 Download PDFInfo
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- TWI757662B TWI757662B TW108143070A TW108143070A TWI757662B TW I757662 B TWI757662 B TW I757662B TW 108143070 A TW108143070 A TW 108143070A TW 108143070 A TW108143070 A TW 108143070A TW I757662 B TWI757662 B TW I757662B
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Abstract
描述拼接晶粒封裝技術及結構,其中經重組晶片係使用晶圓重組及晶粒拼接技術形成。在一實施例中,一種晶片包括一經重組晶片級後段製程(BEOL)增層結構以連接嵌入在一無機間隙填充材料中的一晶粒組。
Description
本文描述之實施例係關於積體電路(integrated circuit, IC)製造及多個晶粒之互連。
多晶片模組(multi-chip module, MCM)通常係將多個晶粒整合在基材上的電子總成。MCM的各種實施方案包括2D、2.5D、及3D封裝。一般而言,2D封裝模組包括並排配置在封裝基材上的多個晶粒。在2.5D封裝技術中,多個晶粒接合至具有微凸塊的中介層。然後該中介層繼而接合至封裝基材。該中介層可包括佈線以使相鄰晶粒互連。因此,2.5D封裝中的晶粒可直接連接至中介層,並通過中介層內的佈線彼此連接。一般而言,3D封裝模組包括垂直堆疊在彼此之上的多個晶粒。因此,3D封裝中的晶粒可直接彼此連接,其中底部晶粒直接連接至封裝基材。3D封裝中的頂部晶粒可使用各種組態(包括打線、及通過底部晶粒之穿矽通孔(through-silicon via, TSV))連接至封裝基材。
晶圓上晶片(chip on wafer, CoW)係可用以提供密集繞線、異質整合,且係可擴充的特定並排封裝組態。在特定組態中,晶粒與中介層之間的混合接合可利用金屬-金屬及氧化物-氧化物接合以藉由避免用於晶粒對中介層連接之焊料凸塊的使用而達成高連接密度。
描述包括晶圓重組及晶粒拼接技術的拼接晶粒封裝解決方案。在一實施例中,一種晶片包括一經重組晶片級後段製程(back end of the line, BEOL)增層結構,其包括複數個互連件;一晶粒組,其在該經重組晶片級BEOL增層結構上;及一無機間隙填充材料,其在該經重組晶片級BEOL增層結構上且圍繞該晶粒組。例如,該無機間隙填充材料可由氧化物、氮氧化物(例如SiOx
Ny
)、具有可變比率及厚度的多個氮氧化物、或矽基質形成。在一實施例中,該經重組晶片級BEOL增層結構包括用於該晶粒組的一第一晶粒的晶粒內互連件、用於該晶粒組的一第二晶粒的晶粒內互連件、及在該第一晶粒與該第二晶粒之間的晶粒對晶粒互連件。該晶圓重組序列可以晶粒面朝上及面朝下處理序列二者來執行。在一實施例中,一種製造一經重組晶圓之方法包括將複數個群組之晶粒組面朝下地安裝至一第一載體基材上;將一間隙填充材料沉積至該第一載體基材上並側向地圍繞該複數個群組之晶粒組的各晶粒;將一第二載體基材相對於該第一載體基材接合;及移除該第一載體基材。例如,該間隙填充材料可包括一無機基質材料,諸如,氧化物或矽。然後可將一經重組晶片級BEOL增層結構形成在該複數個群組之晶粒組及該間隙填充材料的該等前側上。在一實施例中,一背側經重組晶片級BEOL增層結構係形成在該複數個群組之晶粒組之背側上的經暴露穿矽通孔上。
在一實施例中,一種製造一經重組晶圓的方法包括將複數個群組之晶粒組面朝上地安裝至一第一載體基材上、及將一間隙填充材料沉積至該第一載體基材上並側向地圍繞該複數個群組之晶粒組的各晶粒。例如,該間隙填充材料可包括一無機基質材料,諸如,氧化物或矽。然後可將一經重組晶片級BEOL增層結構形成在該複數個群組之晶粒組及該間隙填充材料上。
根據實施例的該等晶圓重組序列可延伸至3D封裝解決方案,諸如,包括將已知良好晶粒的一第一經重組晶圓接合至已知良好晶粒的一第二經重組晶圓,接著單切複數個3D重組晶片的堆疊晶圓(wafer on wafer)(或晶圓對晶圓)程序。
[相關申請案]
本申請案主張於2018年11月29日申請之美國臨時專利申請案序號第62/773,135號之優先權,其全文揭示以引用方式併入本文中。
實施例描述2.5D封裝解決方案,其中一種晶片可包括經重組晶片級後段製程(BEOL)增層結構,其包括複數個互連件;晶粒組,其在該經重組晶片級BEOL增層結構上;及無機間隙填充材料,其在該經重組晶片級BEOL增層結構上且圍繞該晶粒組。
實施例的一些態樣可包括使用後段製程(BEOL)互連件以形成並排(side-by-side, SBS)異質互連件的晶圓重組。使用無機材料(例如氧化物、矽)的重組可允許較高溫度的處理以及更精細的特徵組。經重組晶圓可係用於堆疊晶圓(wafer on wafer, WoW)程序的已知良好重組晶圓(known good reconstituted wafer, KGRW),從而改善良率。
在一些態樣中,經重組晶片級BEOL互連件可形成晶粒對晶粒(die-to-die, D2D)(間)互連件,以及晶片上(內)互連件(支援)。在一些實施例中,經重組晶片級BEOL互連件可包括鋁鑲嵌互連件。例如,可有單鑲嵌(二步驟)或例如使用電沉積的雙鑲嵌。在經重組晶片級BEOL增層結構中使用無機介電質之晶粒(主動側朝上)的特定組態可實現標準通孔及互連處理路徑。
在一些態樣中,封裝方案可最小化或完全移除晶粒上的靜電放電(electrostatic discharge, ESD)保護(因此更接近類晶片上匯流排)。此可減少電容及面積。
在各種實施例中,參照圖式進行說明。然而,某些實施例可在無這些特定細節之一或多者的情況下實行或可與其他已知的方法及組態結合實行。在下列敘述中,為了提供對實施例的全面瞭解而提出眾多特定細節(例如,特定組態、尺寸、及程序等)。在其他例子中,為了避免不必要地使本實施例失焦,所以並未特別詳細地敘述公知的半導體程序及製造技術。此專利說明書通篇指稱的「一實施例(one embodiment)」係指與該實施例一同描述之具體特徵、結構、組態、或特性係包括在至少一實施例中。因此,此專利說明書通篇於各處出現之詞組「在一實施例中(in one embodiment)」不必然指稱相同實施例。此外,在一或多個實施例中,可以任何合適的方式結合特定特徵、結構、組態、或特性。
如本文所用之「在…上面(above)」、「在…上方(over)」、「至(to)」、「跨越(spanning)」、及「在…上(on)」之用語可指稱一層相對於其他層的相對位置。一層在另一層「上面」、在另一層「上方」、「橫跨」另一層、或在另一層「上」或者一層接合「至」另一層或與另一層「接觸(contact)」可直接與另一層接觸或可具有一或多個中介層。在層之間的一層可直接與該等層接觸或可具有一或多個中介層。
在一個態樣中,實施例描述拼接晶粒晶片結構,其可實現CoW及BEOL互連技術二者的效益,同時避免許多關聯的潛在缺點。例如,數個CoW的有益性質包括係異質的(使用不同基材)、每單位面積的密集I/O、每mm的密集繞線、可擴充性、係重劃分及重整合友善的、及提供晶粒擺置準確度。CoW的一些潛在缺點包括將混合接合製造線整合至設施中的費用、技術的成熟度、粒子敏感度(尤其在測試、切塊期間)、及混合接合的高溫。
BEOL互連技術有益性質包括係成熟程序(其影響良率及費用)、提供每單位面積的密集I/O、每mm的密集繞線、可擴充性、相較於CoW較小的粒子敏感度(尤其在測試、切塊期間)、及中等溫度的使用。一些潛在缺點包括係均質的(相同基材)、及重劃分及重整合可係較難的(例如因為固定擺置、重組態的網線成本等)。
根據實施例的拼接晶粒封裝技術可獲得CoW與BEOL選項二者的最佳者。例如,實施例可使用經重組晶圓而從CoW汲取異質性。此外,實施例可從CoW汲取密集IO、晶粒擺置準確度、及重劃分及重整合友善性。實施例亦可從BEOL汲取有益性質,包括程序成熟度、密集IO、密集繞線、可擴充性、較小的粒子敏感度、及中等溫度。
現在參照圖1,提供CoW封裝技術的截面側視圖圖示,其中將並排(SBS)晶粒110混合接合至中介層120,並以氧化物間隙填充130緊固。如圖所示,可在晶粒焊墊118與中介層焊墊122之間製作金屬-金屬接合132。另外,氧化物-氧化物接合134可形成在晶粒與中介層以及氧化物間隙填充與中介層之間。已觀察到此一CoW技術可能因為對微粒非常敏感而促使成本增加,且需要在混合接合期間維持嚴格的環境控制。此外,混合接合線可係主要的非經常性費用。另一缺點係氧化物間隙填充130具有與矽不匹配的熱膨脹CTE。形成氧化物間隙填充亦係緩慢且昂貴的。此亦可對薄晶粒110(例如小於20微米)及基材大小強加限制。例如,參見圖2中之晶粒對中介層CoW界面的示意截面側視圖圖示,其顯示在混合接合至中介層120及凸塊140擺置之後及移除載體基材200之前的晶粒110。圖2額外繪示晶粒級BEOL增層結構115佈線,其可包括形成在形成在半導體基材111中之主動裝置113上方的一或多個金屬及介電層。各晶粒110包括半導體基材111及晶粒級BEOL增層結構115二者。晶粒級BEOL增層結構115可使用傳統的BEOL處理技術(諸如,鑲嵌等)形成。晶粒級BEOL增層結構115可包括繞線層諸如下繞線層MA
、中繞線層MB
、MC
、及上繞線層MD
。如所繪示的,繞線層可可選地具有不同厚度,其中MD
最厚,且MA
最薄(且最精細,例如寬度)。此外,測試(例如Al測試焊墊112的測試)後的晶粒110製備可係CoW的主要經常性成本因子。此外,如圖2所示,測試後的晶粒110製備包括在接合至中介層120之前建立額外氧化物114及銅通孔116(接合所需的最小高度),然後建立金屬焊墊118。
根據實施例之包括晶圓重組及晶粒拼接技術的封裝解決方案可保持CoW及BEOL的最佳特徵。此可使用氧化物及整合基質以重組良好的高良率晶圓(已知良好的經重組晶圓(KGRW))而達成。此支援精確對準、異質晶粒整合、及晶粒分割。BEOL互連件可用以連接具有非常高之I/O面積密度(例如5-10 µm節距)的晶粒。合適數目的較粗節距金屬化層,或甚至最終的金屬化層可用以提供高繞線密度。此外,不需要混合接合,其可降低相關成本並改善良率。此可進一步降低風險及開發時間。晶片周邊良率損失可藉由特徵大小對粒子大小比率來管理。重組序列可對晶粒(中心)面積良率損失較不敏感。
使用根據實施例之晶圓重組及晶粒拼接技術製造的經重組晶片可達成類晶片上繞線(或非常接近)密度(設計輔助資料)。繞線可具有經改善T線效能,並可用於跨越較長距離。繞線可額外對時脈分布,特別係對較大跨距有好處。使用高密度繞線,可調諧層的數目。繞線對常規晶片上電路(例如可路由晶片上匯流排)亦係可行的。可將中繼器形成在活性矽中。亦有針對繞線的測試考量,諸如可將匯流排的一部分提供在晶粒中(在整合前)。此使測試變得可能。然後,可將全部的匯流排路由在頂部上以提供全部功能及頻寬。整體而言,BEOL繞線的實施方案可提供更接近晶片上環境的外觀與感覺及使用。
使用根據實施例之晶圓重組及晶粒拼接技術製造的經重組晶片亦可在需要較小面積並減少寄生電容之晶粒對晶粒連接中最小化(或消除靜電放電(ESD)電路)。仍可將ESD提供在經重組晶片級BEOL繞線中,以用於晶片外部焊墊。
圖3係根據一實施例之使用晶圓重組及晶粒拼接技術製造之晶片300的示意截面側視圖圖示。如所繪示的,晶片300包括複數個並排晶粒110,其可係經劃分的系統單晶片晶粒、來自不同晶圓及來自不同程序節點的異質晶粒等。將晶粒110組封裝在間隙填充130材料中,該間隙填充材料可係,例如,氧化物(例如,氧化矽)或矽。將經重組晶片級BEOL增層結構310形成在晶粒110及間隙填充130上方,晶片級BEOL增層結構310包括通孔312、晶片上(晶片內)繞線314、及在晶粒110與一或多個介電層318之間的晶粒對晶粒(D2D)互連(繞線)316。例如,經重組晶片級BEOL增層結構310在一些實施例中可包括最終金屬化層及/或較粗節距金屬化層。在一實施例中,該等金屬化層可係較厚之層,例如與晶粒級BEOL增層結構115之上繞線層(例如MD
)等效的厚度或更厚。根據一些實施例,可使用繞線層之間的傳統鑲嵌或雙鑲嵌通孔連接。
根據實施例,經重組晶片級BEOL增層結構310繞線為晶粒110製作至晶粒級增層結構115的電連接。此可使用Cu-Cu繞線、Al-Al繞線、及Cu-Al繞線程序的組合來達成。在一實施例中,晶粒級BEOL增層結構115主要可包括Cu繞線,其中上繞線層(例如MD
)包括由Al形成的測試焊墊。在一實施例中,經重組晶片級BEOL增層結構310繞線包括與晶粒級增層結構115之上繞線層(例如MD
)或對其接觸之繞線層(例如MC
)等效或更厚的繞線層(雖然更精細的繞線係可行的)。經重組晶片級BEOL增層結構310可使用Cu或Al繞線程序的其中一者形成。在一實施例中,經重組晶片級BEOL增層結構310使用Al繞線程序,其可可選地使用(單一)鑲嵌通孔312。然而用以接觸經晶粒級BEOL增層結構115的通孔312根據實施例亦可由Cu形成。在一些實施例中,服務品質可基於需求(諸如延遲、功率等)用以組織金屬使用。
形成氧化物間隙填充的例示性方法包括化學氣相沉積(chemical vapor deposition, CVD)、電漿增強CVD (PECVD)、次大氣壓CVD (SA-CVD)、及選擇性氧化物沉積(selective oxide deposition, SELOX)。此類氧化物沉積技術係通常以高溫執行的磊晶技術、係相對緩慢的、且係相對昂貴的。用於形成矽間隙填充的例示性方法包括磊晶技術,諸如CVD、PECVD、低壓CVD (LPCVD)、及熱絲CVD,以及濺鍍、矽墨水、矽膏、及電沉積。然而,諸如PECVD及LPCVD的磊晶技術可在較低溫度執行,但熱絲CVD可具有顯著較高的沉積速率。電沉積可在低溫使用離子液體執行。此外,矽墨水及矽膏可在低溫沉積,接著因為矽奈米粒子的降低熔點而在低溫回流。值得注意的係,用於矽間隙填充之形成的可用技術可在較低溫度、使用較短的沉積時間、且可能較不昂貴的設備執行。此可影響生產量與成本二者。在矽材料用以提供間隙填充130材料及整合基質的情況中,矽間隙填充130材料可機械清潔(即良好的CTE匹配)。相較於氧化物間隙填充130材料(其可被限制小於20 µm的高度),矽間隙填充130材料亦可允許包括較厚的(主動)晶粒110(例如50 µm厚)。此外,矽間隙填充材料可允許在製造期間使用較大的載體基材200選項(如200 mm、300 mm晶圓或500×500 mm平板或更大)。矽亦可係較低成本的(例如矽可電沉積、濺鍍、使用低溫化學氣相沉積來沉積,或例如使用墨水或膏),且可在低溫(例如小於250 ℃,其中小於120 ℃係潛在可行的)完成。使用該矽選項,可使晶圓在清潔後成為「最好的(prime)」。矽程序可亦將該程序重引入至成熟的潔淨工廠(例如成熟的較大生產工廠,諸如90 nm或180 nm製程節點,其可減少非經常性費用)。
利用根據實施例之用於間隙填充的矽材料可允許較厚的晶粒110選項(熱點的經改善散熱)及改善晶粒110(例如矽)對間隙填充130(矽)的熱接觸二者。再次短暫地參照圖1,繪示與CoW薄氧化物間隙填充130的此一比較。如圖所示,在CoW實施方案中,晶粒110可能需要小於20 µm厚。否則,氧化物間隙填充130可能因為應力而破裂。可額外包括氧化物附接膜211(在晶粒110與機械處理矽基材200之間),雖然此非常薄,並僅在熱阻上提供少量增加。
值得注意的係,矽間隙填充與繞線無關。經矽間隙填充的經重組晶圓亦可用於CoW/混合接合程序。
現在參照圖3,可更切實地使矽間隙填充130材料比氧化物間隙填充材料更厚,並可形成在晶粒110上方,且亦可允許更厚的晶粒110。不論間隙填充130材料的選擇,晶粒110可具有至少一些部分金屬的繞線。例如,此可包括至少傳統的精細節距BEOL繞線(例如MA
)。例如,此等可包括目前技術中的12層至18層的金屬層,且在未來可能更多。此等繞線可包括接近主動裝置113(電晶體),然後進行到具有0.4至0.8 µm節距之類BEOL(例如MB
、MC
、MD
)的精細繞線(例如MA
)。各晶粒110可包括足夠的繞線,及用於電路測試以識別良好已知晶粒的測試焊墊112(例如鋁焊墊,類似於圖2)。除了測試需求外,繞線不需係完整的,或電路不需係完整的。可在經重組晶片級BEOL增層結構310中製作最終連接。
經重組晶片級BEOL增層結構(包括所繪示的介電(氧化物)層318)可包括與晶粒繞線內類似或較粗的繞線。例如,經重組晶片級BEOL增層結構310中的晶片內繞線314可包括不具有ESD保護,由程序界定之2至10 um的緊密I/O節距。晶粒對晶粒(D2D)互連(繞線)316可包括類似節距,具有最小或無ESD保護。外部晶片焊墊150(例如可係鋁)可具有甚至更寬鬆的I/O節距,諸如由覆晶凸塊節距考量界定的60至130 µm。
圖4繪示根據實施例之用於與內部晶片層接觸之在經重組晶片級BEOL增層結構310的製造期間的後段製程繞線序列。如圖所示,經重組晶片級BEOL增層結構可包括一或複數個金屬互連層並可包括鑲嵌連接。此外,深通孔312可通過晶粒級BEOL層形成以接觸晶粒金屬化。此可避免包括測試焊墊112的頂部金屬層(例如MD
)。因此,可將通孔312連接蝕刻並形成至晶粒級BEOL增強結構115層中,以與晶粒級BEOL層連接,同時繞過測試焊墊112。此外,經重組晶片級BEOL增層結構310中的金屬層可用以製作D2D互連件316,其亦可利用前述通孔312。然後可形成外部晶片焊墊150,接著施加(焊料)凸塊140。
圖5繪示根據實施例之用於與頂部金屬層接觸的後段製程繞線序列。圖5類似於圖4,其中一個差異係通孔312接觸件與頂部金屬層(例如MD
)焊墊118接觸。因此,相較之下,通孔可係較淺的通孔,且通孔節距可受限於晶粒焊墊118節距。在一實施例中,用於D2D互連件316的焊墊118可具有比用於晶片300(例如用於覆晶)之外部晶片焊墊150更精細節距的。此結構對電力遞送係亦有益的。
現在參照圖6,繪示根據實施例之用於建立在原始晶粒110中的通孔116及焊墊118的後段製程繞線序列。在此一實施例中,在測試之後,雖然採用初始晶圓形式,可製造晶粒110通孔116及焊墊118。因此,在測試之後,可將薄氧化物114形成在所繪示之頂部金屬層測試焊墊112上方。在測試之後,接著形成晶粒級BEOL增層結構115通孔116及焊墊118,接著已知良好晶粒110的切塊。然後,執行經重組晶圓程序,並形成經重組晶片級增層結構310及晶粒內互連件314,以及D2D互連件316。在此實例中,經重組晶片級BEOL增層結構310中可能需要較淺的經重組晶片級通孔312以接觸晶粒110金屬。此可係非常精細的節距選項,具有有限的晶粒擺置精確度。若面積較大,可執行網線拼接。最後,施加外部凸塊140。圖6之實施例的一些物理特性包括經重組晶片級BEOL程序中的較精細節距的較淺通孔,且晶粒級通孔116及焊墊118係在探針焊墊112之上。
應理解雖然圖4至圖6單獨地描述及繪示,在一些實施例中,通孔描述可組合。此外,雖然將單一金屬或互連層繪示在經重組晶片級BEOL增層結構310中,應瞭解可形成多個金屬或互連層,並可具有不同厚度(例如MC
、MD
等)。在一些實施例中,服務品質可基於需求(諸如延遲、功率等)用以組織金屬使用。
圖7A至圖7C繪示根據實施例之晶粒級BEOL增層結構115處理序列。如圖7A所示,處理序列以半導體基材111(例如矽晶圓)(包括主動(裝置)層,該主動層包括主動裝置113)及晶粒級BEOL增層結構115(包括非常精細節距的金屬層(例如MA
)、較粗節距的金屬層(例如MB
、MC
)、及頂部金屬層(例如MD
)(例如,其可係鋁))開始。在一實施例中,晶粒級BEOL層包括鑲嵌(例如單或雙鑲嵌)互連件。頂部金屬層(例如MD
)可包括測試焊墊112。在一實施例中,下金屬化層係使用標準銅處理製造,而上金屬層(例如MD
,及可選地MC
)可使用鋁處理製造。
接著使用著陸在頂部金屬層中的測試焊墊112上的測試探針測試各個別晶粒(仍在晶圓內)。然後可清潔晶圓及測試焊墊112,接著施加氧化物層114。然後薄氧化物層114可可選地形成在頂部金屬層上,接著沿著刻劃線單切晶粒110,如圖7C中所繪示。在此階段,晶粒110可放入箱中成已知良好晶粒(KGD1)。此程序針對將供應已知良好晶粒(KDG2)的第二晶圓,及針對額外晶圓「2…n」重複。
然後提供載體,然後將已知良好晶粒110的群組安裝在載體基材205上。例如,此可係氧化物接合。在一實施例中,此可包括晶粒110組(例如KGD1、KGD2等)的接合。程序流程可取決於晶粒110係面朝上或面朝下地安裝在載體基材上而不同。
圖8係根據實施例之晶圓重組及晶粒拼接技術的經對準前緣晶粒面朝下處理序列的程序流程圖。圖9A至圖9E係根據實施例之使用前側經重組晶片級BEOL增層結構之繪示於圖8中的程序流程的截面側視圖圖示。圖9F至圖9K係根據實施例之使用背側經重組晶片級BEOL增層結構之繪示於圖8中的程序流程的截面側視圖圖示。應理解圖9A至圖9E及圖9F至圖9K的處理序列包括不同的間隙填充基質材料(例如氧化物、矽、氮氧化物等)。此外,數種程序變化係可行的。為了清晰及簡潔,一起描述圖8、圖9A至圖9E及圖9F至圖9K的程序序列以及變化。
如圖9A及圖9F所示,處理序列可在操作810開始,其中將複數個群組的晶粒組110A、110B等(包括至少二個晶粒110)面朝下地(主動側朝下)安裝至載體基材205上。各晶粒110可具有高度變化。晶粒厚度可係5至100 µm(更易於處理)。晶粒110可與載體基材205氧化物接合。例如,氧化物層114可與載體基材205上的氧化物層接合。進入晶粒可分開清潔(最小測試及刻劃殘留物)。在操作815,晶粒組的較厚晶粒構件然後可可選地藉由研磨或CMP拋光薄化。此繪示於圖9G中,雖然亦可在圖9A之後執行。較厚晶粒構件的此厚度減少可促進後續的間隙填充並減少晶粒對晶粒高度變化。同樣地,所有晶粒構件均可薄化以提供相等厚度並移除晶粒組中的晶粒構件厚度之間的階梯表面。
在一實施例中,在已知良好晶粒擺置(或甚至晶粒切塊)之前,可修復並清潔晶粒測試焊墊112(例如來自測試的鋁焊墊)。此接著可沉積額外的氧化物層114,及可選地建立通孔116及焊墊118,如相關於圖6所描述。
如圖9B及圖9H所示,在操作820,將間隙填充130材料沉積在載體基材205上,使得其側向地圍繞複數個群組之晶粒組的各者。然後間隙填充130可依需要平面化,其可可選地暴露一或多個晶粒組110A、110B等的背側。在一些實施例中,間隙填充130材料係氧化物。此處實作矽(例如濺鍍、LPCVD、熱絲CVD、矽墨水、矽膏、電沉積),此可允許與晶粒110的CTE匹配。在此一矽-矽系統中,可達成較佳的機械匹配。另外,可能可使用比氧化物間隙填充更厚的晶粒110,其中沉積可能用更長時間。
然後,程序序列可取決於是否將執行前側或背側組重組晶片級BEOL增層結構而變化。在前側方法中,在操作830,接著可將第二(背)載體基材200相對於第一(前)載體基材205接合,且如圖9C所繪示的,接著在操作840移除第一載體基材205。此時,晶粒110面(主動側)係在暴露側上。現在參照圖9D,翻轉該結構,且在操作850,將經重組晶片級BEOL增層結構310建立在複數個群組的晶粒組及間隙填充130材料上。此與所描述的CoW序列不同,因為經重組晶片級BEOL增層結構310不需要混合接合,而可替代地在,例如包括聚合物/金屬或氧化物/金屬的逐層處理序列中形成。可測試個別的經重組晶片級BEOL增層結構佈線,接著如圖9E所示的晶片單切的切塊。繪示於圖9A至圖9E中的處理序列可允許晶粒110高度變化,因為將主動側面朝外以用於處理序列。
在背側D2D互連方法中,在操作835,穿矽通孔(TSV) 902可接著形成在複數個群組的晶粒組中,或露出(例如使預形成的TSV露出)。此時,晶粒110面(主動側)仍面朝下,且在操作845,將經重組晶片級BEOL增層結構310建立在複數個群組的晶粒組、TSV 902、及間隙填充130材料的背側上,如圖9I所繪示。如先前所描述,經重組晶片級BEOL增層結構310可包括D2D互連件316、晶片上(晶片內)繞線314、及一或多個介電層。因此,背側經重組晶片級BEOL增層結構310包括通過TSV 902的D2D連接。然後可將第二(背)載體基材200相對於第一(前)載體基材205接合,且如圖9J所繪示,接著在操作855移除第一載體基材205。此時,晶粒110面(主動側)係在可用以連接至封裝的暴露側上。現在參照圖9K,額外的前側經重組晶片級BEOL增層結構910可可選地建立在複數個群組的晶粒組及間隙填充130材料上,且更具體地說,在晶粒級BEOL增層結構115上。此結構可接著載體基材200的單切及移除、凸塊140的施用、額外的WoW接合等。前側經重組晶片級BEOL增層結構910可實質類似於先前描述的經重組晶片級BEOL增層結構120、310,並包括相同特徵。
圖10係根據實施例之晶圓重組及晶粒拼接技術的經對準前緣晶粒面朝上處理序列的程序流程圖。圖11A至圖11D係根據實施例之繪示於圖10中之程序流程的截面側視圖圖示。
應理解圖11A至圖11D的處理序列包括不同的間隙填充基質材料(例如氧化物、矽)。此外,數種程序變化係可行的。為了清晰及簡潔,一起描述圖10及圖11A至圖11D的程序序列以及變化。
如圖11A所示,處理序列可在操作1010開始,其中將複數個群組的晶粒組(包括至少二個晶粒110)面朝上地(主動側朝上)安裝至載體基材200上。各晶粒110可具有小的高度變化。僅作為實例,變化可係+/- 1 µm,其中各晶粒的厚度係5至20 µm。厚度變化可小於圖9A中的厚度變化。例如,晶粒110可與載體基材200氧化物接合。進入晶粒可分開清潔(最小測試及刻劃殘留物)。如圖11B所示,在操作1020,將間隙填充130材料沉積至載體基材205上,使得其側向地圍繞複數個群組之晶粒組的各者。間隙填充130接著可依需要平面化。現在參照圖11C,在操作1030,將經重組晶片級BEOL增層結構310建立在複數個群組的晶粒組110A、110B等及間隙填充130材料上。此與所描述的CoW序列不同,因為經重組晶片級BEOL增層結構不需要混合接合,而可替代地在,例如包括聚合物/金屬或氧化物/金屬的逐層處理序列中形成。經重組晶片級BEOL增層結構310的形成可包括通孔312的形成,其可延伸通過間隙填充130材料。因為主動側係面朝上的,至晶粒110之通孔312高度需要足以接觸晶粒級BEOL增層結構115。例如,此可大於晶粒110高度變化。在平面化後,可暴露通孔312(至少在該等晶粒的一者上,若厚度不同,或許非全部)。接著可形成經重組晶片級BEOL增層結構310的剩餘部分。在一些實施例中,間隙填充130材料係氧化物。此處實作矽(例如濺鍍、CVD、PECVD、LPCVD、熱絲CVD、矽墨水、矽膏、電沉積),此可允許適形、低溫沉積、及如先前描述的與晶粒的CTE匹配。
然後可測試個別的經重組晶片級BEOL佈線,接著如圖11D所示的晶片300單切的切塊。繪示於圖11A至圖11D中的處理序列可係較不昂貴的處理序列選項。亦相關於圖17A至圖17E描述及繪示額外的處理序列變化,其可進一步降低處理成本。
相較於CoW混合接合,根據實施例的晶圓重組及晶粒拼接技術亦可提供粒子敏感度降低。圖12A係顯示在晶圓重組階段及CoW程序之混合接合期間之粒子1200的示意截面側視圖圖示。平面性需求可係嚴格的(諸如大約1至5 nm之均方根(room mean square, RMS)粗糙度),且甚至小粒子(例如具有10 nm的最大粒子大小)可打開大數目的焊墊118、122,具有潛在的良率衝擊。因此,粒子大小及平面性需求係緊密地鏈結的,且需要非常乾淨的環境以用於組裝,其可係昂貴的。作為推論,10 nm粒子大小控制可需要比20 nm更佳的技術節點清潔度,暗示設定及操作成本。圖12B係顯示CoW混合接合程序上的粒子敏感度的示意俯視圖圖示。如圖所示,晶粒110與中介層120之間的焊墊118、122連接可係比晶粒對晶粒互連件125中的更精細焊墊118、122及特徵/繞線更粗的特徵(例如電源、接地焊墊等)。如圖所示,粒子1200可在此等區域之任何者中導致良率損失,且粒子敏感度係混合接合區域的100%以上,即使在較小區域中(例如總體的10%)的精細特徵。
圖13A係根據一實施例顯示在晶圓重組及晶粒拼接技術程序的晶圓重組階段期間的較低粒子1200敏感度的示意截面側視圖圖示。圖13B係根據一實施例顯示在晶圓重組及晶粒拼接技術程序的互連階段期間的粒子1200的示意截面側視圖圖示。如圖13A至圖13B所示,通孔312高度過蝕刻可用以補償缺陷(粒子)。大約10 µm的例示性焊墊118節距、及大約1 µm之D2D互連316節距可遠大於粒子(例如大約100 nm)。此大於CoW情形的10X。因此,根據實施例的晶圓重組及晶粒拼接技術可藉由選擇物理/程序尺寸而減少粒子大小敏感度。此可導致更寬鬆的清潔度及組裝選項。作為推論,100 nm粒子大小控制需要比200 nm更佳的技術節點清潔度(非常成熟的技術節點)。圖13C係根據一實施例顯示在晶圓重組及晶粒拼接技術程序上的粒子1200效應的示意俯視圖圖示。類似圖12B,晶粒110與經重組晶片級BEOL增層結構310之間的焊墊118連接可係比D2D互連316中的較精細焊墊118、通孔312、及特徵/繞線更粗的特徵(例如電源、接地焊墊等)。如圖所示,粒子敏感度大幅受限於精細節距面積(例如總體的10%),其可改善良率。因為較粗的特徵大小,在其他晶粒區域上方的粒子對良率具有更少影響。此外,藉由使D2D互連316區域中的特徵大小更大,可進一步降低失敗的可能性。
用於晶粒拼接的經重組晶片級BEOL增層結構310互連件可實作合適的導電材料及BEOL處理技術。在一些實施例中,當使用晶圓重組及晶粒拼接技術形成經重組晶片級BEOL增層結構310時,可利用銅繞線及/或鋁繞線的其中一者。例如,鋁繞線可更適合不支援銅BEOL程序之非常成熟的BEOL製造線。一些非常成熟的程序與製造線僅支援鋁。鋁程序對一些應用係充分的,且比銅便宜。在更傳統的鋁互連件中,鋁繞線與用於多層精細節距選項(通常為接近矽的下金屬層)的鎢栓塞組合。鎢程序添加費用,與鋁金屬層定義一樣。相反地,因為障壁及罩蓋層以預防銅擴散的成本,銅雙鑲嵌程序可係昂貴的。在一實施例中,BEOL互連件包括鋁雙鑲嵌連接。鋁雙鑲嵌可可選地包括用於平面化及填充目的的回流,其可超過450 ℃。在使用此一電沉積鋁雙鑲嵌實施例的一些實施例中,沒有鎢通孔且沒有回流。因為較平滑的形貌,此實現精細金屬節距。
圖14A至圖14C係根據一實施例之鋁雙鑲嵌程序的示意截面側視圖圖示。如所繪示,在圖14A中,該序列可包括由蝕刻停止層1204開的第一介電層1402及第二介電層1406。通孔1210開口及溝槽1412開口可使用先通孔或後通孔方法的其中一者形成。如圖14B所示,沉積主體鋁層1420以填充通孔1410開口及溝槽1412開口。此可接著回流程序,及導致雙鑲嵌互連1422的平面化,如圖14C所繪示。
圖15A至圖15D係根據實施例之間隙填充沉積序列的示意截面側視圖圖示。在所繪示的特定序列中,將晶粒110組面朝下地安裝至載體基材205上,如相關於圖9A於先前描述及繪示,然而,實施例並未如此受限,且間隙填充沉積序列可使用面朝上的晶粒110組執行,如圖11A所繪示。然後可形成第一適形層131,如圖15B所繪示。例如,此可係薄氧化物、氮化物、矽層等以提供良好的階梯覆蓋。在一實施例中,第一適形層131係使用較高品質且較慢的沉積方法(諸如高溫CVD程序)形成,其可導致磊晶生長。然後可沉積主體層133,如圖15C所繪示。主體層133可使用導致較低品質材料(例如更多缺陷)且以較高速率沉積的程序形成。然後間隙填充130可如圖15D所繪示的平面化,其可可選地暴露晶粒110的背側。
根據實施例,間隙填充130材料可由多個層形成,並可包括不同材料的多個層。雖然將第一適形層131及主體層133繪示於圖15D中,間隙填充130可包括多個適形層,及其他層堆疊。在繪示於圖15E中的實施例中,間隙填充130層的生長性質可在晶粒110組之間導致氣隙1500。例如,氣隙可對所得晶片結構貢獻介電性質。
適當間隙填充130沉積技術的選擇可額外考慮晶粒高度對晶粒組之間的間隙的高寬比。根據實施例,晶粒組中之相鄰晶粒110之間的間隙的特徵在於大約1或更高的高寬比,諸如1至2,或甚至高達5,雖然更高的高寬比係可能的。對於5之例示性高寬比,在2 µm之間隙的情況下,晶粒110可具有10 µm的最小晶粒高度。然而,較低的高寬比可更易於以減少的時間需求填充。在繪示於圖15E中的一實施例中,晶粒110側壁199可係漸縮的以促進間隙填充。
圖16A至圖16D係根據實施例之包括矽墨水或矽膏沉積之間隙填充沉積序列的示意截面側視圖圖示。如所繪示,序列可與圖15A類似地以第一適形層131的可選沉積開始。例如,此可係矽的PECVD磊晶沉積程序。替代地,可沉積氧化物或氮化物層。此第一適形層131形成高品質間隙填充密封。參照圖16B至圖16C,可沉積矽墨水或矽膏的主體層133,接著回流。例如,回流可在小於350 ℃的溫度發生。低回流溫度可係墨水或膏之矽奈米晶體之大小與形狀的結果。例如,矽奈米晶體可具有小於4 nm的最大寬度。然後間隙填充130可如圖16D所繪示的平面化,其可可選地暴露晶粒110的背側。
根據實施例,矽墨水或矽膏可額外用於機械晶粒整平。圖17A至圖17E係根據實施例之使用機械整平的晶圓重組及晶粒拼接技術之經對準前緣晶粒面朝上處理序列的示意截面側視圖圖示。具體地,繪示於圖17A至圖17E中的序列係繪示於圖11A至圖11C中之面朝上序列的修改,其中可模塑層係在間隙填充130材料形成之前沉積,該可模塑層用以使晶粒110之頂部表面形貌平坦化。此允許經重組晶片級BEOL增層結構310的形成,其中通孔312高度不需要針對具有不同高度的晶粒110而不同。此序列亦允許單一載體基材處理序列,與使用二個載體基材之圖9A至圖9E的面朝下處理序列相反。
如所繪示,該序列可以可模塑層1710的沉積開始。例如,此可係矽墨水或矽膏,其可表現為矽焊料。然後將晶粒110組置於可模塑層1710上,如圖17B所示,接著以平面表面1720平坦化。如圖17C所示,晶粒110的頂部表面現在係平整的,且底部表面陷入可模塑層1710中。然後可施加熱以設定可模塑層1710,導致晶粒藉由可模塑層1710附接至載體基材。然後,此可接著係間隙填充130材料的形成、接著經重組晶片級BEOL增層結構310,如圖17D至圖17E所繪示。
直到此時,間隙填充130材料的沉積及晶粒110組之間的縱橫比已與載體基材(晶圓)邊緣或晶粒組之刻劃無關地描述。在繪示於圖18A中的一實施例中,將虛置結構1810形成在晶粒組之間以維持晶粒組110A、110B等周圍之間隙的縱橫比。例如,此一組態可在刻劃線(由虛線繪示)比晶粒組110A、110B等內的晶粒110之間的間隙寬時使用。圖18B係圍繞載體基材(晶圓)邊緣形成之虛置結構1810的圖示,使得針對接近邊緣之晶粒110維持間隙填充及縱橫比。
現在參照圖19,提供根據實施例之晶圓重組流程的高階流程圖。如圖所示,在操作1910,處理複數個晶圓(1..n)以判定已知良好晶粒KGD1..KGDn,其中可接受晶粒110以鉤號標記指示且有瑕疵晶粒110以x標記指示。然後在操作1920,將已知良好晶粒組重組至晶圓上(例如圖9A至圖9C;圖11A至圖11B;圖17A至圖17D)。然後在操作1930,可將已知良好晶粒拋光、清潔、並使其成為「最好的」。成熟工廠程序可用於此序列,而不需要(或需要少數)新線。工廠序列亦可重安排成200 mm或300 mm的晶圓線,或更大的面板線,諸如500×500 mm。
然後在操作1940,可將已知良好的經重組晶圓(KGRW)重引入工廠中以用於經重組晶片級BEOL處理及D2D互連(例如圖9D;圖11C;圖17E)。此接著在操作1950的測試、切塊、及最終封裝。
替代地,具有經重組晶片級BEOL增層結構的KGRW可經接合以用於3D堆疊晶圓(WoW)封裝,而非在此時測試及切塊。在所繪示的情形中,KGRW1及KGRWn使用堆疊晶圓接合在操作1945接合,接著在操作1955切塊及最終封裝以用於3D封裝解決方案。
圖20係比較堆疊晶圓、晶圓上晶片、及根據實施例之晶圓重組及晶粒拼接技術之混合程序流程之良率考量的流程圖。如所繪示,在測試後,×標記指示有瑕疵的晶粒,而鉤號標記指示可接受的晶粒。如圖所示,在WoW技術中,浪費了主動晶粒。底部及頂部晶粒二者均必須產出。程序成本浪費在非產出晶粒上。對於CoW技術,主動晶粒經保留。程序成本浪費在基底晶圓的非產出部分上。在使用KGD1底部晶圓及KDG2頂部晶圓的混合方法中,可改善基底及頂部晶圓二者的良率。隨著頂部及底部晶粒二者均有高良率的晶粒,程序成本較低。因此,根據實施例的經重組晶圓可使用在堆疊晶圓技術(表面、對準、TSV、接合製備)中以用於3D經重組晶片的製造。
在使用實施例的各種態樣的過程中,所屬技術領域中具有通常知識者將明白上述實施例的組合或變化對於使用晶圓重組及晶粒拼接技術形成晶片而言係可行的。雖然已經以結構特徵及/或方法動作之特定語言敘述實施例,應了解附加的申請專利範圍不必受限於所述的特定特徵或行為。替代地,所揭示之特定的特徵及動作應理解為可用於說明之申請專利範圍的實施例。
110:晶粒
110A:晶粒組
110B:晶粒組
111:半導體基材
112:Al測試焊墊/測試焊墊/探針焊墊
113:主動裝置
114:額外氧化物/氧化物/氧化物層
115:晶粒級BEOL增層結構/晶粒級增層結構
116:銅通孔/通孔
118:晶粒焊墊/焊墊
120:中介層/經重組晶片級BEOL增層結構
122:中介層焊墊/焊墊
125:晶粒對晶粒互連
130:氧化物間隙填充/間隙填充
131:第一適形層
132:金屬-金屬接合
133:主體層
134:氧化物-氧化物氧化物接合
140:凸塊
150:外部晶片焊墊
199:側壁
200:機械處理矽基材/載體基材
205:載體基材
211:氧化物附接膜
300:晶片
310:經重組晶片級BEOL增層結構/經重組晶片級增層結構
312:通孔
314:晶片上(晶片內)繞線/晶粒內互連件
316:晶粒對晶粒(D2D)互連(繞線)/D2D互連件
318:介電層
815:操作
830:操作
835:操作
840:操作
845:操作
850:操作
855:操作
902:穿矽通孔(TSV)
910:前側經重組晶片級BEOL增層結構
1010:操作
1020:操作
1030:操作
1200:粒子
1204:蝕刻停止層
1210:操作/通孔
1402:第一介電層
1406:第二介電層
1410:通孔
1412:溝槽
1420:操作/主體鋁層
1422:雙鑲嵌互連
1500:氣隙
1710:可模塑層
1720:平面表面
1810:虛置結構
1910:操作
1920:操作
1930:操作
1940:操作
1945:操作
1950:操作
1955:操作
KGD1:已知良好晶粒
KGD2:已知良好晶粒
KGDn:已知良好晶粒
KGRW:已知良好的經重組晶圓
KGRW1:已知良好的經重組晶圓
KGRW:已知良好的經重組晶圓
MA:下繞線層
MB:中繞線層
MC:中繞線層
MD:上繞線層
[圖1]係CoW封裝技術的示意截面側視圖圖示。
[圖2]係晶粒對中介層CoW界面的示意截面側視圖圖示。
[圖3]係根據一實施例之使用晶圓重組及晶粒拼接技術製造之晶片的示意截面側視圖圖示。
[圖4]繪示根據一實施例之用於與內晶片層接觸的後段製程繞線。
[圖5]繪示根據一實施例之用於與頂部金屬層接觸的後段製程繞線。
[圖6]繪示根據一實施例之用於建立在原始晶粒中的通孔及焊墊的後段製程繞線。
[圖7A]至[圖7C]係根據一實施例之晶粒級BEOL增層結構處理序列的示意截面側視圖圖示。
[圖8]係根據一實施例之晶圓重組及晶粒拼接技術的經對準前緣晶粒面朝下處理序列的程序流程圖。
[圖9A]至[圖9E]係根據一實施例之使用前側經重組晶片級BEOL增層結構之繪示於圖8中的程序流程的示意截面側視圖圖示。
[圖9F]至[圖9K]係根據一實施例之使用背側經重組晶片級BEOL增層結構之繪示於圖8中的程序流程的示意截面側視圖繪示。
[圖10]係根據一實施例之晶圓重組及晶粒拼接技術的經對準前緣晶粒面朝上處理序列的程序流程圖。
[圖11A]至[圖11D]係根據一實施例之繪示於圖10中之程序流程的示意截面側視圖圖示。
[圖12A]係顯示在晶圓重組及CoW程序之混合接合階段期間之粒子的示意截面側視圖圖示。
[圖12B]係顯示CoW混合接合程序上的粒子敏感度的示意俯視圖圖示。
[圖13A]係根據一實施例顯示在晶圓重組及晶粒拼接技術程序的晶圓重組階段期間的較低粒子敏感度的示意截面側視圖圖示。
[圖13B]係根據一實施例顯示在晶圓重組及晶粒拼接技術程序的互連階段期間的粒子的示意截面側視圖圖示。
[圖13C]係根據一實施例顯示在晶圓重組及晶粒拼接技術程序上的粒子效應的示意俯視圖圖示。
[圖14A]至[圖14C]係根據一實施例之鋁雙鑲嵌程序的示意截面側視圖圖示。
[圖15A]至[圖15D]係根據一實施例之間隙填充沉積序列的示意截面側視圖圖示。
[圖15E]係根據一實施例之具有氣隙之間隙填充的示意截面側視圖圖示。
[圖15F]係根據一實施例之在具有漸縮側壁的晶粒之間的間隙填充材料的示意截面側視圖圖示。
[圖16A]至[圖16D]係根據一實施例之包括矽墨水或膏沉積之間隙填充沉積序列的示意截面側視圖圖示。
[圖17A]至[圖17E]係根據一實施例之使用機械整平的晶圓重組及晶粒拼接技術之經對準前緣晶粒面朝上處理序列的示意截面側視圖圖示。
[圖18A]係根據一實施例在晶粒組之間用以維持晶粒組周圍的縱橫比之虛置結構的示意俯視圖圖示。
[圖18B]係根據一實施例在晶粒組周圍用以維持載體基材邊緣周圍的縱橫比之虛置結構的示意俯視圖圖示。
[圖19]係根據一實施例之晶圓重組流程的流程圖。
[圖20]係比較堆疊晶圓、晶圓上晶片、及根據一實施例之晶圓重組及晶粒拼接技術之混合程序流程之良率考量的流程圖。
110:晶粒/載體基材
111:半導體基材
112:Al測試焊墊/測試焊墊/探針焊墊
113:主動裝置
114:額外氧化物/氧化物/氧化物層
115:晶粒級BEOL增層結構/晶粒級增層結構
118:晶粒焊墊/焊墊
130:氧化物間隙填充/間隙填充
140:凸塊
150:外部晶片焊墊
200:機械處理矽基材/載體基材
300:晶片
310:經重組晶片級BEOL增層結構/經重組晶片級增層結構
312:通孔
314:晶片上(晶片內)繞線/晶粒內互連件
316:晶粒對晶粒(D2D)互連(繞線)/D2D互連件
318:介電層
MA:下繞線層
MB:中繞線層
MC:中繞線層
MD:上繞線層
Claims (19)
- 一種晶片,其包含:一經重組晶片級後段製程(BEOL)增層結構,其包括複數個互連件;一晶粒組,其包括一第一晶粒及一第二晶粒在該經重組晶片級BEOL增層結構上,其中該第一晶粒包括具有多個鑲嵌互連件的一第一晶粒級BEOL增層結構,且該第二晶粒包括具有多個鑲嵌互連件的一第二晶粒級BEOL增層結構;及一無機間隙填充材料,其在該經重組晶片級BEOL增層結構上並圍繞該晶粒組,其中該無機間隙填充材料包括矽基質。
- 如請求項1之晶片,其中該經重組晶片級BEOL增層結構包括鑲嵌互連件。
- 如請求項2之晶片,其中該經重組晶片級BEOL增層結構包括鋁鑲嵌互連件。
- 如請求項2之晶片,其中該經重組晶片級BEOL增層結構包括在該晶粒組之間的多個晶粒對晶粒互連件。
- 一種晶片,其包含:一經重組晶片級後段製程(BEOL)增層結構,其包括複數個互連件;一晶粒組,其在該經重組晶片級BEOL增層結構上,其中該晶粒組包括一第一晶粒及一第二晶粒,該第一晶粒包括一第一晶粒級BEOL增層結構,且該第二晶粒包括一第二晶粒級BEOL增層結構;及一無機間隙填充材料,其在該經重組晶片級BEOL增層結構上並圍繞該晶粒組; 其中該該經重組晶片級BEOL增層結構包括深通孔,該等深通孔連接至該第一晶粒級BEOL增層結構,且在該第一晶粒級BEOL增層結構中的測試焊墊下方延伸。
- 如請求項5之晶片,其中該經重組晶片級BEOL增層結構包括用於該第一晶粒的晶粒內互連件、用於該第二晶粒的晶粒內互連件、及在該第一晶粒與該第二晶粒之間的晶粒對晶粒互連件。
- 如請求項6之晶片,其中第一晶粒與第二晶粒之間的該等晶粒對晶粒互連件不包括ESD保護電路。
- 如請求項7之晶片,其中該經重組晶片級BEOL增層結構包括連接至外部經重組晶片級接觸焊墊的ESD保護電路。
- 如請求項6之晶片,其中該無機間隙填充材料包括矽基質。
- 一種製造一經重組晶圓的方法,其包含:將複數個群組的晶粒組面朝下地安裝至一第一載體基材上;將一間隙填充材料沉積至該第一載體基材上並側向地圍繞該複數個群組的晶粒組之各晶粒;將一第二載體基材相對於該第一載體基材接合;及移除該第一載體基材;及在沉積該間隙填充材料之後及在將該第二載體基材相對於該第一載體基材接合之前,將一經重組晶片級後段製程(BEOL)增層結構建立在該複數個群組的晶粒組之背側上並與該複數個群組的晶粒組中的複數個TSV接觸。
- 如請求項10之方法,其中該間隙填充材料係氧化物或氮氧化物材料。
- 如請求項10之方法,其中該間隙填充材料包含矽基質。
- 如請求項10之方法,其進一步包含在沉積該間隙填充材料之前,減少該等晶粒組之至少較厚之晶粒構件的一厚度。
- 如請求項10之方法,其進一步包含在沉積該間隙填充材料之後,將複數個TSV形成在該複數個群組的晶粒組中。
- 一種製造一經重組晶圓的方法,其包含:將複數個群組的晶粒組面朝上地安裝至一第一載體基材上,其中每一個晶粒組包括一第一晶粒及一第二晶粒,該第一晶粒包括具有多個鑲嵌互連件的一第一晶粒級BEOL增層結構,且該第二晶粒包括具有多個鑲嵌互連件的一第二晶粒級BEOL增層結構;將一間隙填充材料沉積至該第一載體基材上並側向地圍繞該複數個群組的晶粒組之各晶粒,其中該間隙填充材料包含矽基質。
- 如請求項15之方法,其進一步包含將一經重組晶片級後段製程(BEOL)增層結構建立在該複數個群組的晶粒組及該間隙填充材料上,其中該經重組晶片級後段製程(BEOL)增層結構包括多個鑲嵌互連件。
- 一種堆疊晶圓程序,其包含:將已知良好晶粒的一第一經重組晶圓接合至已知良好晶粒的一第二經重組晶圓;其中該已知良好晶粒的一第一經重組晶圓包括嵌入在一矽基質間隙填充材料中的一晶粒陣列(array),該晶粒陣列中的每一個晶粒包括具有多個鑲嵌互連件的一第一晶粒級BEOL增層結構。
- 如請求項17之堆疊晶圓程序,其進一步包含單切複數個3D重組晶片。
- 如請求項17之堆疊晶圓程序,其中該已知良好晶粒的一第二經重組晶圓包括嵌入在一第二矽基質間隙填充材料中的一第二晶粒陣列。
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