TWI752786B - Waferless wafer rotation mechanism - Google Patents
Waferless wafer rotation mechanism Download PDFInfo
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- TWI752786B TWI752786B TW110100102A TW110100102A TWI752786B TW I752786 B TWI752786 B TW I752786B TW 110100102 A TW110100102 A TW 110100102A TW 110100102 A TW110100102 A TW 110100102A TW I752786 B TWI752786 B TW I752786B
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Abstract
一種無晶舟晶片旋轉機構,其包含:蝕刻槽、旋柱、葉輪構件及泵,旋柱具有沿軸向方向平行排列的複數旋柱承載溝槽,葉輪構件設置於旋柱的一端,泵具有液體入口及液體出口,其中,液體出口連通至蝕刻槽的一輸入口,輸入口鄰近於葉輪構件,葉輪構件經由泵所帶動的藥液而被推動旋轉。本發明的無晶舟晶片旋轉機構解決了傳動機構的汙染問題。 A boatless wafer rotating mechanism, which comprises: an etching groove, a spin column, an impeller member and a pump, the spin column has a plurality of spin column bearing grooves arranged in parallel along the axial direction, the impeller member is arranged at one end of the spin column, and the pump has The liquid inlet and the liquid outlet, wherein the liquid outlet is connected to an input port of the etching tank, the input port is adjacent to the impeller member, and the impeller member is pushed and rotated by the liquid medicine driven by the pump. The boatless wafer rotating mechanism of the present invention solves the pollution problem of the transmission mechanism.
Description
本發明係關於一種濕式蝕刻機台,更特別的是關於一種無晶舟晶片旋轉機構。 The present invention relates to a wet etching machine, more particularly to a boatless wafer rotating mechanism.
半導體領域的蝕刻製程可分為乾式蝕刻與濕式蝕刻,其中濕式蝕刻具有很好的蝕刻選擇性,廣泛應用於晶圓的氧化物清潔、殘留物移除、表面層剝離等領域。在蝕刻製程中,通常將25片或50片的晶圓浸沒於蝕刻槽中的蝕刻用藥液(例如氫氟酸)。而考慮到蝕刻的均一性,濕式蝕刻機台會盡可能攪拌蝕刻用藥液並使晶圓轉動。 The etching process in the semiconductor field can be divided into dry etching and wet etching. Among them, wet etching has good etching selectivity and is widely used in the fields of oxide cleaning, residue removal, and surface layer stripping of wafers. In the etching process, 25 or 50 wafers are usually immersed in an etching solution (eg, hydrofluoric acid) in an etching tank. Considering the uniformity of etching, the wet etching machine will stir the etching solution as much as possible and rotate the wafer.
然而,傳統的機械式傳動容易產生微粒,進而汙染藥液及晶圓。若使用磁力傳動,則易受溫度的影響而不穩定,並且蝕刻槽體的厚度也會限制磁力傳動。 However, the traditional mechanical transmission is prone to generate particles, which in turn contaminate the chemical liquid and the wafer. If magnetic transmission is used, it is easily affected by temperature and becomes unstable, and the thickness of the etched tank body will also limit the magnetic transmission.
因此,為解決習知的濕式蝕刻機台的種種問題,本發明提出一種無晶舟晶片旋轉機構。 Therefore, in order to solve various problems of the conventional wet etching machine, the present invention provides a boatless wafer rotating mechanism.
為達上述目的及其他目的,本發明提出一種無晶舟晶片旋轉機構,其包含:一蝕刻槽;一旋柱,設置於該蝕刻槽中,該旋柱具有沿軸向方向平行排列的複數旋柱承載溝槽;至少一葉輪構件,設置於該旋柱的一端;以及一泵,具有一液體入口及一液體出口,其中,該液體出口連通至該蝕刻槽的一 輸入口,該輸入口鄰近於該葉輪構件,該葉輪構件及該旋柱經由該泵所帶動的藥液而被推動旋轉。 In order to achieve the above object and other objects, the present invention provides a boatless wafer rotating mechanism, which includes: an etching groove; a column bearing groove; at least one impeller member disposed at one end of the spin column; and a pump having a liquid inlet and a liquid outlet, wherein the liquid outlet communicates with a liquid outlet of the etching tank an input port, the input port is adjacent to the impeller member, and the impeller member and the spin column are pushed and rotated by the liquid medicine driven by the pump.
於本發明之一實施例中,該旋柱承載溝槽的底部的周緣距離該旋柱的旋轉中心為非等距,而形成至少一頂推角。 In an embodiment of the present invention, the peripheral edge of the bottom of the spin column bearing groove is not equidistant from the rotation center of the spin column to form at least one thrust angle.
於本發明之一實施例中,該旋柱承載溝槽沿該旋柱的徑向方向上的剖面,具有複數圓弧段及複數平直段,該等圓弧段及該等平直段交錯設置而形成該頂推角。 In one embodiment of the present invention, the cross section of the spin column bearing groove along the radial direction of the spin column has a plurality of circular arc segments and a plurality of straight segments, and the circular arc segments and the straight segments are staggered. set to form the push angle.
於本發明之一實施例中,該旋柱承載溝槽沿該旋柱的徑向方向上的剖面,具有四圓弧段及四平直段。 In an embodiment of the present invention, the cross section of the spin column bearing groove along the radial direction of the spin column has four arc segments and four straight segments.
於本發明之一實施例中,該葉輪構件數量為二,分別設置於該旋柱的相對二端。 In an embodiment of the present invention, the number of the impeller components is two, which are respectively disposed at opposite ends of the spin column.
於本發明之一實施例中,該蝕刻槽具有二該輸入口,分別設置鄰近於該等葉輪構件。 In an embodiment of the present invention, the etching tank has two input ports, which are respectively disposed adjacent to the impeller members.
於本發明之一實施例中,該蝕刻槽更具有一回流口,連通於該液體入口。 In an embodiment of the present invention, the etching tank further has a return port, which is communicated with the liquid inlet.
於本發明之一實施例中,更包含至少二支撐柱,該等支撐柱平行設置於該旋柱的兩側,該等支撐柱分別具有沿軸向方向平行排列的複數旋柱承載溝槽。 In one embodiment of the present invention, at least two supporting columns are further included, the supporting columns are disposed parallel to both sides of the spin column, and the supporting columns respectively have a plurality of spin column bearing grooves arranged in parallel along the axial direction.
於本發明之一實施例中,更包含一承載架體,該旋柱及該葉輪構件設置於該承載架體,該承載架體設置於該蝕刻槽。 In an embodiment of the present invention, it further includes a carrier body, the spin column and the impeller member are disposed in the carrier rack body, and the carrier rack body is disposed in the etching groove.
藉此,本發明的無晶舟晶片旋轉機構,利用蝕刻本身所使用的藥液推動葉輪構件,使晶圓均勻地接觸到藥液,不會因蝕刻槽內的藥液的濃度 不均、沉澱或其他因速,導致單片晶圓內各處的蝕刻速率有所偏差。因此,可提升晶圓的蝕刻均一性。而藥液推動葉輪構件的方式不產生微粒汙染,亦不受溫度及槽體的厚度而影響穩定性。 Thereby, the boatless wafer rotating mechanism of the present invention utilizes the chemical liquid used in the etching itself to push the impeller member, so that the wafer is evenly contacted with the chemical liquid, regardless of the concentration of the chemical liquid in the etching tank Non-uniformity, precipitation, or other factors that cause the etch rate to vary from place to place within a single wafer. Therefore, the etching uniformity of the wafer can be improved. The way that the liquid medicine pushes the impeller components does not produce particle pollution, and the stability is not affected by the temperature and the thickness of the tank body.
100:無晶舟晶片旋轉機構 100: Waferless wafer rotation mechanism
1:蝕刻槽 1: Etching groove
11:輸入口 11: Input port
12:回流口 12: Return port
2:旋柱 2: Spin column
21:旋柱承載溝槽 21: Spin column bearing groove
211:頂推角 211: Push angle
22:圓弧段 22: Arc segment
23:平直段 23: Straight section
3:葉輪構件 3: Impeller components
4:泵 4: Pump
41:泵殼體 41: Pump housing
411:液體入口 411: Liquid inlet
412:液體出口 412: Liquid outlet
5:支撐柱 5: Support column
6:承載架體 6: Bearing frame
C:旋轉中心 C: center of rotation
P:晶圓 P: Wafer
圖1係為根據本發明實施例之無晶舟晶片旋轉機構之立體示意圖。 FIG. 1 is a schematic perspective view of a boatless wafer rotating mechanism according to an embodiment of the present invention.
圖2係為根據本發明實施例之旋柱之立體示意圖。 FIG. 2 is a three-dimensional schematic diagram of a spin column according to an embodiment of the present invention.
圖3A係為圖2沿A-A線段之剖面示意圖。 FIG. 3A is a schematic cross-sectional view along the line A-A of FIG. 2 .
圖3B係為圖3A之另一種態樣之示意圖。 FIG. 3B is a schematic diagram of another aspect of FIG. 3A .
為充分瞭解本發明,茲藉由下述具體之實施例,並配合所附之圖式,對本發明做一詳細說明。本領域技術人員可由本說明書所公開的內容瞭解本發明的目的、特徵及功效。須注意的是,本發明可透過其他不同的具體實施例加以施行或應用,本說明書中的各項細節亦可基於不同觀點與應用,在不悖離本發明的精神下進行各種修飾與變更。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的申請專利範圍。說明如後:如圖1所示,本發明實施例之無晶舟晶片旋轉機構100,其包含:一蝕刻槽1、一旋柱2、至少一葉輪構件3及一泵4。無晶舟指的是不需要仰賴晶舟裝載晶片。
In order to fully understand the present invention, the present invention is described in detail by the following specific embodiments and the accompanying drawings. Those skilled in the art can understand the objects, features and effects of the present invention from the contents disclosed in this specification. It should be noted that the present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the spirit of the present invention. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of the patent application of the present invention. The description is as follows: As shown in FIG. 1 , the boatless
蝕刻槽1為上方具有開口之槽體,槽體內可注入蝕刻用藥液,並置放待蝕刻之晶圓P或其他基板。
The
旋柱2設置於蝕刻槽1中,如圖2所示,旋柱2具有沿軸向方向平行排列的複數旋柱承載溝槽21。晶圓P可平行置放於這些旋柱承載溝槽21中,而保持一定的間距浸泡於蝕刻槽1。藉由旋柱2的複數旋柱承載溝槽21,晶圓P不需要另外在放置於一卡匣中,而可直接置於蝕刻槽1中。
The
至少一葉輪構件3,設置於旋柱2的一端。在本實施例中,葉輪構件3共有二個,分別設置於旋柱2的相對二端。
At least one
如圖1所示,泵4外接於蝕刻槽1之外。泵4包括一泵殼體41,泵殼體41具有一液體入口411及一液體出口412。
As shown in FIG. 1 , the
流體(包含蝕刻用藥液)從液體入口411進入泵殼體41中,泵4提供動力以推動流體從液體出口412流出,液體出口412連通至蝕刻槽1的一輸入口11。輸入口11鄰近於葉輪構件3,使得葉輪構件3經由泵4所帶動的藥液而被推動旋轉。葉輪構件3旋轉則帶動旋柱2旋轉,因此蝕刻槽1中的晶圓P在槽體內隨著旋柱2而轉動,以均勻地接觸到藥液,不會因蝕刻槽1內的藥液的濃度不均、沉澱或其他因速,導致單片晶圓P內各處的蝕刻速率有所偏差。因此,可提升晶圓P的蝕刻均一性。
The fluid (including the etching liquid) enters the
綜上所述,本發明的無晶舟晶片旋轉機構100,利用所使用的蝕刻用藥液來推動葉輪構件3,傳動過程不造成微粒汙染,亦幫助晶圓P蝕刻均勻。
To sum up, the boatless wafer
圖3A係為圖2沿A-A線段之剖面示意圖。進一步地,如圖2及圖3A所示,在本實施例中,旋柱承載溝槽21的底部的周緣距離旋柱2的旋轉中心C
為非等距,而形成至少一頂推角211。換句話說,旋柱承載溝槽21的底部的周緣具有類似凸輪的結構。在旋柱2旋轉的過程中,晶圓P輪流接觸旋柱承載溝槽21的底部的周緣,頂推角211可將晶圓P頂推再落下,使得晶圓P可沿Z軸方向往復移動,並增加藥液在晶圓底部(即與旋柱承載溝槽21接觸的位置)附近的流動。
FIG. 3A is a schematic cross-sectional view along the line A-A of FIG. 2 . Further, as shown in FIG. 2 and FIG. 3A , in this embodiment, the peripheral edge of the bottom of the spin
進一步地,如圖3A所示,在本實施例中,旋柱承載溝槽21沿旋柱2的徑向方向上的剖面,具有複數圓弧段22及複數平直段23,這些圓弧段22及平直段23交錯設置而形成頂推角211。
Further, as shown in FIG. 3A , in this embodiment, the cross section of the spin
進一步地,如圖3A所示,在本實施例中,旋柱承載溝槽21沿旋柱2的徑向方向上的剖面,具有四圓弧段22及四平直段23。圓弧段22及平直段23形成四重對稱,具有八個頂推角211。然而本發明不限於此,圓弧段22及平直段23的數量及排列可改為其他數量及形式。
Further, as shown in FIG. 3A , in this embodiment, the cross section of the spin
進一步地,如圖3B所示,在本實施例中,旋柱承載溝槽21沿旋柱2的徑向方向上的剖面為八邊形,具有八個頂推角211。然而本發明不限於此,旋柱承載溝槽21沿旋柱2的徑向方向上的剖面可以為其他數量的多邊形。
Further, as shown in FIG. 3B , in this embodiment, the cross section of the spin
進一步地,如圖1所示,在本實施例中,蝕刻槽1具有二輸入口11,分別設置鄰近於二葉輪構件3。從液體出口412輸出的流體藥液分別從蝕刻槽1的兩端進入槽體內,使旋柱2的兩端的葉輪構件3皆受帶動而平衡受力。
Further, as shown in FIG. 1 , in this embodiment, the
進一步地,在本實施例中,蝕刻槽1更具有一回流口12,連通於液體入口411。回流口12可將蝕刻用藥液回流至液體入口411而形成一循環迴圈。然而本發明不限於此,回流口12亦可直接將蝕刻用藥液排出,而液體入口411則補充新鮮的蝕刻用藥液。
Further, in this embodiment, the
進一步地,在本實施例中,無晶舟晶片旋轉機構100更包含至少二支撐柱5,這些支撐柱5平行設置於旋柱2的兩側,並且在Z軸方向上略高於旋柱2,以支撐晶圓P的兩側邊。支撐柱5亦可具有多個平行排列的旋柱承載溝槽以置放晶圓P。
Further, in this embodiment, the boatless wafer
進一步地,在本實施例中,無晶舟晶片旋轉機構100更包含一承載架體6,該旋柱2、該等支撐柱5及該等葉輪構件3設置於該承載架體6,該承載架體6設置於該蝕刻槽1。藉此,該旋柱2、該等支撐柱5及該等葉輪構件3可藉由該承載架體6懸設於該蝕刻槽1中。
Further, in this embodiment, the boatless wafer
本發明在上文中已以實施例揭露,然熟習本項技術者應理解的是,該實施例僅用於描繪本發明,而不應解讀為限制本發明之範圍。應注意的是,舉凡與該實施例等效之變化與置換,均應設為涵蓋於本發明之範疇內。因此,本發明之保護範圍當以申請專利範圍所界定者為準。 The present invention has been disclosed by embodiments above, but those skilled in the art should understand that the embodiments are only used to describe the present invention, and should not be construed as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to this embodiment should be considered to be included within the scope of the present invention. Therefore, the protection scope of the present invention should be defined by the scope of the patent application.
100:無晶舟晶片旋轉機構 100: Waferless wafer rotation mechanism
1:蝕刻槽 1: Etching groove
11:輸入口 11: Input port
12:回流口 12: Return port
2:旋柱 2: Spin column
3:葉輪構件 3: Impeller components
4:泵 4: Pump
41:泵殼體 41: Pump housing
411:液體入口 411: Liquid inlet
412:液體出口 412: Liquid outlet
5:支撐柱 5: Support column
6:承載架體 6: Bearing frame
P:晶圓 P: Wafer
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US6911097B1 (en) * | 2000-07-31 | 2005-06-28 | Taiwan Semiconductor Manufacturing Company | Photoresist stripper using nitrogen bubbler |
TWM611803U (en) * | 2021-01-04 | 2021-05-11 | 錫宬國際股份有限公司 | Cassette-free wafer rotating mechanism |
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US6911097B1 (en) * | 2000-07-31 | 2005-06-28 | Taiwan Semiconductor Manufacturing Company | Photoresist stripper using nitrogen bubbler |
TWM611803U (en) * | 2021-01-04 | 2021-05-11 | 錫宬國際股份有限公司 | Cassette-free wafer rotating mechanism |
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