CN116169052A - Etching equipment and control method thereof - Google Patents
Etching equipment and control method thereof Download PDFInfo
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- CN116169052A CN116169052A CN202211596604.8A CN202211596604A CN116169052A CN 116169052 A CN116169052 A CN 116169052A CN 202211596604 A CN202211596604 A CN 202211596604A CN 116169052 A CN116169052 A CN 116169052A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an etching device and a control method thereof, wherein the etching device comprises: the device comprises a cavity and a wafer basket positioned in the cavity, wherein a liquid inlet and a liquid outlet for conveying corrosive liquid are formed in the cavity; the bottom of the wafer basket is provided with a rotating device, wherein the rotating device drives wafers in the wafer basket to rotate when rotating, so that the contact uniformity of the wafers and the corrosive liquid is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to etching equipment and a control method thereof.
Background
The preparation of various semiconductor devices is not separated from the etching process, the etching process is divided into dry etching and wet etching, and the wet etching adopts different liquid medicines to remove etched materials by a chemical reaction method. Wet etching is widely used in the manufacturing process of various devices due to the characteristics of low cost, high selectivity, large flux and the like.
The existing metal wet etching mostly adopts a dipping process, but the uniformity of the corroded metal is poor due to the non-uniformity of the chemical liquid flow around the contact positions of the wafer in the corrosion groove, the left side, the right side and the bottom of the basket, and the non-uniformity of the metal film of the complex micro device directly affects the mechanical system energy, the electrical property and the yield of the device.
Disclosure of Invention
The present invention has been made in view of the above-mentioned problems, and has as its object to provide an etching apparatus and a control method thereof that overcome or at least partially solve the above-mentioned problems.
In a first aspect, there is provided an etching apparatus comprising:
the device comprises a cavity and a wafer basket positioned in the cavity, wherein a liquid inlet and a liquid outlet for conveying corrosive liquid are formed in the cavity;
the bottom of the wafer basket is provided with a rotating device, wherein the rotating device drives wafers in the wafer basket to rotate when rotating, so that the contact uniformity of the wafers and the corrosive liquid is improved.
Optionally, the rotating device includes two rotating shafts to stably support the wafer.
Optionally, the rotating speed range of the rotating device is 0-50 r/min.
Optionally, the etching apparatus further includes: and the bubble generating device is positioned between the bottom of the cavity and the wafer basket.
Optionally, the air bubble generating device includes: the device comprises an air inlet channel and an air outlet plate, wherein a plurality of air outlet holes are formed in the air outlet plate.
Optionally, the aperture range of the air outlet hole is 0-5 mm.
Optionally, the air bubble generating device includes: and the air outlet flow of each air outlet plate is independently controlled.
In a second aspect, there is provided a control method of an etching apparatus, where the etching apparatus is any one of the etching apparatuses described in the first aspect, the method including:
moving the wafer into the wafer basket, and inputting corrosive liquid into the cavity;
and starting the rotating device to drive the wafer in the wafer basket to rotate so as to improve the contact uniformity of the wafer and the corrosive liquid.
Optionally, the etching apparatus further includes a bubble generating device, the bubble generating device is located between the bottom of the cavity and the wafer basket, and after the wafer is moved into the wafer basket and the etching solution is input into the cavity, the etching apparatus further includes: starting the bubble generating device, and stirring the etching solution to improve the contact uniformity of the wafer and the etching solution.
Optionally, the air bubble generating device includes at least two air outlet plates, the air outlet flow rate of each air outlet plate is independently controlled, and the opening the air bubble generating device includes: and opening the two air outlet plates in turn.
The technical scheme provided by the embodiment of the invention has at least the following technical effects or advantages:
the etching equipment and the control method thereof provided by the embodiment of the invention are provided, and the setting of the etching equipment comprises the following steps: the wafer basket comprises a cavity and a wafer basket arranged in the cavity, and a rotating device is arranged at the bottom of the wafer basket. Therefore, when the rotating device rotates, the wafer in the wafer basket is driven to rotate, and the contact uniformity of the wafer and the corrosive liquid can be improved. Thereby ensuring the mechanical system energy, the electrical property and the yield of the prepared device.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present invention more readily apparent.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a block diagram of an etching apparatus in an embodiment of the present invention;
fig. 2 is a flowchart of a control method of an etching apparatus according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
Various structural schematic diagrams according to embodiments of the present disclosure are shown in the drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned.
Referring to fig. 1, the present invention provides an etching apparatus, including:
the etching device comprises a cavity 1 and a wafer basket 2 positioned in the cavity 1, wherein a liquid inlet 11 and a liquid outlet 12 for conveying etching liquid are formed in the cavity 1;
the bottom of the wafer basket 2 is provided with a rotating device 3, wherein the rotating device 3 drives the wafer 101 in the wafer basket 2 to rotate when rotating, so as to improve the contact uniformity of the wafer 101 and the corrosive liquid.
It should be noted that the patterning process of the wafer usually includes at least three steps: the first is an etching process, wherein the etching process is completed within an etching apparatus. The second is a cleaning process, which is performed in a cleaning apparatus to wash away the adhering etching liquid. The third is a drying process, which is performed in a drying apparatus to dry the wafer for the next process. The etching equipment provided by the embodiment of the application is used for etching process, can be used for immersion wet etching and also can be used for spray wet etching, and is not limited herein. Can be used for metal etching or etching of other materials, and is not limited herein. In the following description, an etching apparatus is described as an example of an immersion wet etching apparatus.
In the immersion process of wet etching, a Teflon wafer basket carrying a wafer to be etched is usually soaked in an etching tank filled with a chemical etching solution in a certain proportion, the time of the wafer in the etching solution is set according to the thickness and the etching rate of a required etching film, mechanical stirring or shaking is usually carried out, after the set etching time is reached, the wafer is moved into ultrapure deionized water to clean residual reaction products and etching solution, and then a wafer is dried, so that the patterning of metal is completed. The uniformity of corroded metal is poor due to the non-uniformity of chemical liquid flow around the contact positions of the wafer in the corrosion groove and the left side, the right side and the bottom of the wafer basket, and the non-uniformity of the metal film of the complex micro device directly influences the mechanical system energy, the electrical property and the yield of the device.
In an alternative embodiment, the chamber 1 is used to hold an etching solution and the wafer basket 2 is used to hold and hold a wafer to be etched. The bottom of the wafer basket 2 is in an opening shape, the rotating device 3 can be arranged between the bottom of the cavity 1 and the bottom opening of the wafer basket 2, when the wafer basket 2 is internally loaded with the wafer 101, the lower part of the wafer 101 just contacts with the rotating device 3, so that the rotating device 3 can play a role in supporting the wafer 101 and can drive the wafer 101 to rotate when being opened, so that the wafer 101 is fully and uniformly contacted with corrosive liquid in the cavity 1, and the etching uniformity is ensured.
In an alternative embodiment, the rotation device 3 may include two rotation shafts as shown in fig. 1 to stably support the wafer 101. Specifically, the axial directions of the two rotation shafts are perpendicular to the surface direction of the wafer placed in the wafer basket 2 and are symmetrically arranged relative to the center of the wafer basket 2, so that when the rotation device 3 rotates, the rotation speed of the wafer 101 can be kept at a constant speed, and the stability of the wafer 101 can be kept. Of course, a single rotation shaft or two or more rotation shafts may be provided, which is not limited herein.
In an alternative embodiment, the rotating device 3 may be made of a corrosion-resistant and wear-resistant material, so as to prevent the corrosion liquid from damaging the rotating device, and ensure the service life and reliability. The rotating speed range of the rotating device 3 can be set to be 0-50 r/min so as to achieve uniform contact and stability.
In the case that the etching apparatus is an immersion wet etching apparatus, it may be provided that it further includes: and the bubble generating device 4 is positioned between the bottom of the cavity 1 and the wafer basket 2. The etching solution is uniformly stirred by the bubbles generated by the bubble generating device 4, so that the complete coverage and uniform stirring of the surface of the wafer 101 are ensured, the non-uniformity of the chemical liquid flow around the wafer is eliminated, and the etching uniformity is realized. The bubble generating device 4 may be a nitrogen bubble generating device, and the nitrogen is stable and is not easy to react, so that the performance of the corrosive liquid is prevented from being influenced.
As shown in fig. 1, the bubble generating apparatus 4 includes: an air inlet channel 41 and an air outlet plate 42, wherein a plurality of air outlet holes are arranged on the air outlet plate 42. The air inlet channel 41 may be hollow and tubular and is communicated with the air outlet plate 42, the air outlet plate 42 is hollow, and a plurality of through holes are formed in the plate body of the air outlet plate 42 as air outlet holes. The aperture range of the air outlet holes is 0-5 mm, and the air outlet holes are uniformly distributed on the surface of the air outlet plate, so that bubbles can be densely and uniformly output into corrosive liquid for stirring.
In an alternative embodiment, the bubble generating means 4 may include: at least two gas outlet plates 42, the flow rate of the gas outlet of each of the gas outlet plates 42 is independently controlled. The independently controllable air flow through each air outlet plate 42 may be provided by providing different air outlet patterns to achieve different agitation requirements. For example, as shown in fig. 1, the bubble generating device 4 may include three air outlet plates 42, which are respectively arranged at three positions of left, middle and right along the placing direction of the wafer, fine air bubble holes are uniformly distributed on the surfaces of the three air outlet plates 42, and the nitrogen flow of the corresponding air outlet plates 42 can be individually controlled and regulated, so as to ensure that a large number of fine nitrogen bubbles are uniformly stirred at the left side, middle side and right side of the wafer. In this way, in the corrosion process, the rotation of the rotating device 3 is combined, and the uniformly generated nitrogen bubbles provide complete coverage and uniform stirring of the surface of the wafer under the rotation of the wafer, so that the non-uniformity of the chemical liquid flow around the wafer is eliminated, and the uniformity of metal etching is realized.
In particular, the etching equipment provided by the embodiment of the invention can provide more stable, controllable and repeatable etching, and the process is more reliable. And through the combination of the rotating device 3 and the bubble generating device 4, the uniformity of the flow of the etching liquid around the crystal circumference in the etching process is improved, a more uniform metal film is obtained after etching, the mechanical system energy and the electrical property of the metal film are improved, and the yield of device products is effectively improved.
Based on the same inventive concept, the embodiment of the present invention further provides a control method of the foregoing etching apparatus, where the etching apparatus is shown in fig. 1, and the control method is shown in fig. 2, and includes:
step S201, moving the wafer 101 into the wafer basket 2, and inputting corrosive liquid into the cavity 1;
step S202, starting the rotating device 3 to drive the wafer 101 in the wafer basket 2 to rotate, so as to improve the contact uniformity between the wafer 101 and the etching solution.
Wherein, the etching solution is input through a liquid inlet 11 on the cavity 1, and is discharged out of the cavity 1 through a liquid outlet 12 after etching is finished.
In an alternative embodiment, the etching apparatus further includes a bubble generating device 4, the bubble generating device 4 is located between the bottom of the cavity 1 and the wafer basket 2, after the wafer 101 is placed in the wafer basket 2 and the wafer 101 is submerged in the etching solution in the cavity 1, the bubble generating device 4 is turned on, gas (such as nitrogen) is output from the air inlet channel 41, and is output to the etching solution through the air outlet plate 42, and the etching solution is stirred to improve the contact uniformity of the wafer 101 and the etching solution.
In an alternative embodiment, the air bubble generating device 4 may further include at least two air outlet plates 42, the air outlet flow rate of each air outlet plate 42 is independently controlled, and the activating the air bubble generating device 4 includes: the two gas outlet plates 42 are alternately opened. When there are three air outlet plates 42 as shown in fig. 1, the three air outlet plates 42 may be opened in turn to ensure that each region is sufficiently stirred, and also avoid the mutual influence of the stirring in different regions.
The control method of the etching device according to the embodiment of the present invention is described in detail in the process of describing the etching device, so that based on the etching device according to the embodiment of the present invention, a person skilled in the art can understand the deformation of the control method of the etching device, and therefore will not be described in detail here. All control methods for controlling the etching equipment in the embodiment of the invention belong to the scope of the invention to be protected.
The technical scheme provided by the embodiment of the invention has at least the following technical effects or advantages:
the etching equipment and the control method thereof provided by the embodiment of the invention are provided, and the setting of the etching equipment comprises the following steps: the wafer basket comprises a cavity and a wafer basket arranged in the cavity, and a rotating device is arranged at the bottom of the wafer basket. Therefore, when the rotating device rotates, the wafer in the wafer basket is driven to rotate, and the contact uniformity of the wafer and the corrosive liquid can be improved. Thereby ensuring the mechanical system energy, the electrical property and the yield of the prepared device.
The algorithms and displays presented herein are not inherently related to any particular computer, virtual system, or other apparatus. Various general-purpose systems may also be used with the teachings herein. The required structure for a construction of such a system is apparent from the description above. In addition, the present invention is not directed to any particular programming language. It will be appreciated that the teachings of the present invention described herein may be implemented in a variety of programming languages, and the above description of specific languages is provided for disclosure of enablement and best mode of the present invention.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be construed as reflecting the intention that: i.e., the claimed invention requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
Those skilled in the art will appreciate that the modules in the apparatus of the embodiments may be adaptively changed and disposed in one or more apparatuses different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component and, furthermore, they may be divided into a plurality of sub-modules or sub-units or sub-components. Any combination of all features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or units of any method or apparatus so disclosed, may be used in combination, except insofar as at least some of such features and/or processes or units are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the following claims, any of the claimed embodiments can be used in any combination.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
Claims (10)
1. An etching apparatus, comprising:
the device comprises a cavity and a wafer basket positioned in the cavity, wherein a liquid inlet and a liquid outlet for conveying corrosive liquid are formed in the cavity;
the bottom of the wafer basket is provided with a rotating device, wherein the rotating device drives wafers in the wafer basket to rotate when rotating, so that the contact uniformity of the wafers and the corrosive liquid is improved.
2. The etching apparatus according to claim 1, wherein:
the rotating device comprises two rotating shafts so as to stably support the wafer.
3. The etching apparatus according to claim 1, wherein:
the rotating speed range of the rotating device is 0-50 r/min.
4. The etching apparatus according to claim 1, further comprising:
and the bubble generating device is positioned between the bottom of the cavity and the wafer basket.
5. The etching apparatus according to claim 4, wherein the bubble generating means comprises:
the device comprises an air inlet channel and an air outlet plate, wherein a plurality of air outlet holes are formed in the air outlet plate.
6. The etching apparatus according to claim 5, wherein:
the aperture range of the air outlet hole is 0-5 mm.
7. The etching apparatus according to claim 5, wherein the bubble generating means comprises:
and the air outlet flow of each air outlet plate is independently controlled.
8. A control method of an etching apparatus, characterized in that the etching apparatus is the etching apparatus according to any one of claims 1 to 7, the method comprising:
moving the wafer into the wafer basket, and inputting corrosive liquid into the cavity;
and starting the rotating device to drive the wafer in the wafer basket to rotate so as to improve the contact uniformity of the wafer and the corrosive liquid.
9. The control method of claim 8, wherein the etching apparatus further comprises a bubble generating device located between the bottom of the chamber and the wafer basket, and further comprising, after the moving the wafer into the wafer basket and inputting the etching solution into the chamber:
starting the bubble generating device, and stirring the etching solution to improve the contact uniformity of the wafer and the etching solution.
10. The control method according to claim 9, wherein the bubble generating means includes at least two gas outlet plates, the flow rate of the gas outlet of each of the gas outlet plates being independently controlled, and the turning on the bubble generating means includes:
and opening the two air outlet plates in turn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211596604.8A CN116169052A (en) | 2022-12-12 | 2022-12-12 | Etching equipment and control method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211596604.8A CN116169052A (en) | 2022-12-12 | 2022-12-12 | Etching equipment and control method thereof |
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| CN116169052A true CN116169052A (en) | 2023-05-26 |
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| CN202211596604.8A Pending CN116169052A (en) | 2022-12-12 | 2022-12-12 | Etching equipment and control method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117038521A (en) * | 2023-08-15 | 2023-11-10 | 武汉誉辰电子科技有限公司 | Semiconductor silicon chip etching device |
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2022
- 2022-12-12 CN CN202211596604.8A patent/CN116169052A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117038521A (en) * | 2023-08-15 | 2023-11-10 | 武汉誉辰电子科技有限公司 | Semiconductor silicon chip etching device |
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