JP5112931B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate such as a semiconductor wafer, a liquid crystal display substrate, a plasma display substrate, an FED (Field Emission Display) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask substrate. The present invention relates to a substrate processing apparatus that performs processing on the substrate.

  In a manufacturing process of a semiconductor device or a liquid crystal display device, processing using a processing liquid or a processing gas is performed on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel. For example, in a single-wafer type substrate processing apparatus that processes substrates one by one, a cylindrical cup in a processing chamber, a spin chuck that is placed in the cup and rotates while holding the substrate horizontally, and the spin chuck And a processing liquid nozzle for supplying the processing liquid to the surface of the substrate held in the container.

  When the processing liquid is processed on the substrate, an upward air current may be generated around the spin chuck due to the rotation of the substrate and the spin chuck. When the processing liquid is processed, the mist of the processing liquid rises due to the rising air flow, and when the mist of the processing liquid diffuses into the processing chamber, the inner wall of the processing chamber and the members in the processing chamber are contaminated by the mist of the processing liquid. When this is dried in the processing chamber, it becomes particles and floats in the atmosphere, which may contaminate a substrate to be processed later. Therefore, an FFU (fan filter unit) is provided at the center of the top surface of the processing chamber, clean air is supplied downward from the air supply port of the FFU, and exhaust from the exhaust port formed on the bottom surface of the cup. To form a descending airflow in the cup. At the same time, the atmosphere in the processing chamber is exhausted from the exhaust port formed in the bottom surface of the processing chamber in order to suppress the rise of the processing liquid mist and the like in the processing chamber inner space outside the cup. A configuration is adopted in which a downdraft is formed to facilitate replacement of the atmosphere in the processing chamber.

In the processing chamber, for example, a blocking plate for blocking the space on the surface of the substrate from the periphery thereof is accommodated facing the surface (upper surface) of the substrate held by the spin chuck. The blocking plate is formed in a disc shape and is disposed above the spin chuck.
JP 2006-202983 A

  However, if the air supply port of the FFU is formed above the blocking plate, the blocking plate inhibits the flow of clean air, resulting in turbulence in the air flow in the processing chamber. For example, convection of the atmosphere in the processing chamber Occurs. Moreover, during the rotation of the spin chuck, the air flow in the processing chamber tends to be disturbed due to the above-described upward air flow. Due to these factors, it is not always easy to form a stable downdraft in the processing chamber space outside the cup.

In order to stabilize the air flow in the processing chamber and promote the replacement of the internal atmosphere, a large exhaust capacity is required for exhausting from the exhaust port at the bottom of the processing chamber. However, there are cases where it is difficult to ensure the exhaust capacity necessary for airflow stabilization because of the limitation by the exhaust power that can be prepared in the factory where the substrate processing apparatus is installed.
Accordingly, an object of the present invention is to provide a substrate processing apparatus capable of satisfactorily replacing the atmosphere in the processing chamber without requiring a large exhaust capacity for exhaust from the exhaust port.

According to the first aspect of the present invention, there is provided a processing chamber (3, 71, 81) for processing a substrate (W) surrounded by the side walls (2, 72, 82), and a substrate inside the processing chamber. A substrate holding means (4) for holding the substrate, a cylindrical cup (5) surrounding the periphery of the substrate holding means, an air supply section (41, 42) disposed above the processing chamber, and the processing chamber A gas is supplied from the air supply unit toward the inside of the processing chamber so that a spiral airflow is formed in the processing chamber. direction as well as from the exhaust unit, viewed contains a supply and exhaust means (41, 42, 51, 52) for exhausting the atmosphere inside the processing chamber, the air supply unit, which intersects the transverse direction (vertical direction ) Lateral air supply that supplies gas toward (43, 44) comprises, the exhaust unit, the atmosphere in the processing chamber, lateral outlet for exhausting sucking laterally (53, 54) and including, a substrate processing apparatus (1,70,80 )

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this configuration, a spiral airflow is formed in the processing chamber. The spiral airflow descends while circling around the cup in the region near the cup. Since this vortex-like air current hardly interferes with the member that inhibits the downward air flow in the processing chamber, turbulence (convection) due to the interference with the member hardly occurs. Therefore, for example, even when the substrate is rotating, a stable vortex descending airflow can be formed. Thereby, the atmosphere in the processing chamber can be satisfactorily replaced without requiring a large exhaust capacity.

In addition, gas is supplied in a lateral direction from a lateral air supply port disposed in an upper portion of the processing chamber. Further, gas is sucked from the lateral direction toward the lateral exhaust port disposed in the lower part of the processing chamber. Thereby, so-called push-pull ventilation can be performed. Since both the direction of supply air and the direction of exhaust gas are directions that promote the formation of vortex flow, it is possible to efficiently form a vortex flow that descends while circulating in the processing chamber.

The lateral direction is intended to include not only the horizontal direction but also an inclined direction inclined by a predetermined angle (0 ° to 40 °) with respect to the horizontal direction.
The invention described in claim 2 is a processing chamber (3, 71, 81) surrounded by the side walls (2, 72, 82) for processing the substrate (W) therein, and the substrate inside the processing chamber. A substrate holding means (4) for holding the substrate, a cylindrical cup (5) surrounding the periphery of the substrate holding means, an air supply section (41, 42) disposed above the processing chamber, and the processing chamber A gas is supplied from the air supply unit toward the inside of the processing chamber so that a spiral airflow is formed in the processing chamber. And an air supply / exhaust means (41, 42, 51, 52) for exhausting the atmosphere inside the processing chamber from the exhaust unit, and the air supply unit supplies gas toward the direction along the inner wall. Supply inner wall direction air supply port (43, 4 ) A, the exhaust unit, the atmosphere in the processing chamber, the inner wall direction outlet for exhausting inhale from a direction along the inner wall includes a (53, 54), a board processing unit.

According to this configuration, a spiral airflow is formed in the processing chamber. The spiral airflow descends while circling around the cup in the region near the cup. Since this vortex-like air current hardly interferes with the member that inhibits the downward air flow in the processing chamber, turbulence (convection) due to the interference with the member hardly occurs. Therefore, for example, even when the substrate is rotating, a stable vortex descending airflow can be formed. Thereby, the atmosphere in the processing chamber can be satisfactorily replaced without requiring a large exhaust capacity.
Further, gas is supplied along the inner wall from the inner wall direction air supply port arranged in the upper part of the processing chamber. Further, gas is sucked into the inner wall direction exhaust port arranged in the lower part of the processing chamber from the direction along the inner wall. Accordingly, it is possible to promote the formation of a spiral airflow that descends while circling in the processing chamber.
According to a third aspect of the present invention, the inner wall guides the gas supplied to the inside of the processing chamber from the air supply port, and rectifies the rectifying wall (66, 67, 68, 69, 72A, 82A).
According to this configuration, the gas supplied from the air supply port is rectified so as to be guided by the rectifying wall and circulate in the processing chamber. For this reason, formation of the spiral airflow which circulates in the processing chamber can be promoted.
The invention described in claim 4 is a process chamber (3, 71, 81) for processing a substrate (W) surrounded by the side walls (2, 72, 82), and a substrate inside the process chamber. A substrate holding means (4) for holding the substrate, a cylindrical cup (5) surrounding the periphery of the substrate holding means, an air supply section (41, 42) disposed above the processing chamber, and the processing chamber A gas is supplied from the air supply unit toward the inside of the processing chamber so that a spiral airflow is formed in the processing chamber. And an air supply / exhaust means (41, 42, 51, 52) for exhausting the atmosphere inside the processing chamber from the exhaust part, and the inner wall extends from the air supply port to the inside of the processing chamber. Guide the supplied gas, Airflow serial spiral is rectified so as to form comprises a baffle wall (66,67,68,69,72A, 82A), a board processing unit.
According to this configuration, a spiral airflow is formed in the processing chamber. The spiral airflow descends while circling around the cup in the region near the cup. Since this vortex-like air current hardly interferes with the member that inhibits the downward air flow in the processing chamber, turbulence (convection) due to the interference with the member hardly occurs. Therefore, for example, even when the substrate is rotating, a stable vortex descending airflow can be formed. Thereby, the atmosphere in the processing chamber can be satisfactorily replaced without requiring a large exhaust capacity.

Further, the gas supplied from the air supply port is rectified so as to be guided by the rectifying wall and circulate in the processing chamber. For this reason, formation of the spiral airflow which circulates in the processing chamber can be promoted.
A fifth aspect of the present invention is the substrate processing apparatus according to the fourth aspect, wherein the rectifying wall includes a concave curved surface (66, 67, 68, 69, 72A, 82A) having a horizontal section recessed outward. .

According to this configuration, the gas supplied from the air supply port is guided by the concave curved surface and rectified into a curved shape along the concave curved surface. This makes it easy to form a spiral airflow that circulates in the processing chamber.
A sixth aspect of the present invention is the substrate processing apparatus according to the fifth aspect, wherein the concave curved surface is a cylindrical surface (72A) centered on a predetermined vertical axis.

According to this configuration, the gas supplied from the air supply port is guided by the cylindrical surface and rectified along the arcuate track. This makes it easier to form a spiral airflow in the processing chamber.
A seventh aspect of the present invention is the substrate processing apparatus according to the fifth aspect, wherein the concave curved surface is a cone-shaped surface (82A) centered on a predetermined vertical axis.

  According to this configuration, the gas supplied from the air supply port is guided by the cone-shaped surface and rectified along the arcuate track. This makes it easier to form a spiral airflow in the processing chamber. The cone-shaped surface may be such that a horizontal distance from a predetermined vertical axis to the concave curved surface decreases as it goes downward. In this case, a relatively strong airflow can be formed not only in the upper part of the processing chamber but also in the lower part of the processing chamber. Thereby, the spiral downdraft can be stabilized over the entire processing chamber.

The invention described in claim 8 is a processing chamber (3, 71, 81) for processing a substrate (W) surrounded by the side walls (2, 72, 82), and a substrate inside the processing chamber. A substrate holding means (4) for holding the substrate, a cylindrical cup (5) surrounding the periphery of the substrate holding means, an air supply section (41, 42) disposed above the processing chamber, and the processing chamber A gas is supplied from the air supply unit toward the inside of the processing chamber so that a spiral airflow is formed in the processing chamber. And an air supply / exhaust means (41, 42, 51, 52) for exhausting the atmosphere inside the processing chamber from the exhaust unit, and the air supply unit sandwiches the cup in a plan view. are a pair arranged, board processor A.
According to this configuration, a spiral airflow is formed in the processing chamber. The spiral airflow descends while circling around the cup in the region near the cup. Since this vortex-like air current hardly interferes with the member that inhibits the downward air flow in the processing chamber, turbulence (convection) due to the interference with the member hardly occurs. Therefore, for example, even when the substrate is rotating, a stable vortex descending airflow can be formed. Thereby, the atmosphere in the processing chamber can be satisfactorily replaced without requiring a large exhaust capacity.
A pair of the air supply units are provided at positions sandwiching the cup. Since the gas is supplied by the pair of air supply units, a moment can be efficiently applied to the spiral airflow. As a result, a stronger spiral airflow can be formed in the processing chamber.

The invention according to claim 9 is the substrate processing apparatus according to claim 1, further comprising a facing member (20) facing the substrate held by the substrate holding means from above.
According to this configuration, the gas supplied into the processing chamber from the air supply port forms a swirling downward airflow, and therefore hardly interferes with the facing member disposed above the substrate holding means. Accordingly, since the turbulent airflow (convection) caused by the interference with the opposing member is hardly generated in the airflow formed in the processing chamber, the vortex descending airflow in the processing chamber is stable, and the atmosphere in the processing chamber is reduced. Can be replaced efficiently.

According to a tenth aspect of the present invention, the substrate holding means holds the substrate in a horizontal posture, and the counter member is formed of a horizontal plane facing the upper surface of the substrate held by the substrate holding means. The substrate processing apparatus according to claim 9, wherein the substrate processing apparatus is a plate-like member having a surface (21).
According to this configuration, the spiral airflow formed in the processing chamber flows along the substrate facing surface formed of a horizontal plane, and therefore hardly interferes with the facing member. Therefore, it is possible to suppress the occurrence of turbulent airflow (convection) due to the interference of the opposing member in the processing chamber, so that a stable vortex descending airflow is formed in the processing chamber.

The invention described in claim 11 further includes inert gas supply means (24, 25, 27) for supplying an inert gas between the substrate held by the substrate holding means and the substrate facing surface. Item 11. The substrate processing apparatus according to Item 10.
According to this configuration, the gas is supplied between the surface of the substrate held by the substrate holding unit and the surface facing the substrate.

Since a spiral airflow is formed around the cup surrounding the substrate holding means, the space between the surface of the substrate and the substrate-facing surface may become a negative pressure compared to the side region of the substrate. In this case, the atmosphere in the side area of the substrate may flow into the space between the surface of the substrate and the substrate facing surface.
Therefore, an inert gas is supplied between the surface of the substrate and the substrate facing surface. Thereby, it can prevent that the space between the surface of a board | substrate and a board | substrate opposing surface becomes a negative pressure compared with the side area | region of a board | substrate. For this reason, the airflow in the processing chamber can be further stabilized.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a sectional view conceptually showing the structure of a substrate processing apparatus 1 according to an embodiment of the present invention.
The substrate processing apparatus 1 is installed in a clean room and executes a cleaning process for removing contaminants from a semiconductor wafer W (hereinafter simply referred to as “wafer W”), which is an example of a substrate, using a processing liquid. It is a device for. As the treatment liquid, a chemical liquid or DIW (deionized water) can be used. Further, when a chemical solution is used, as this chemical solution, SC1 (ammonia hydrogen peroxide solution mixture), SC2 (hydrochloric acid hydrogen peroxide solution mixture), SPM (sulfuric acid / hydrogen peroxide mixture). ), Hydrofluoric acid, buffered HF (Buffered HF: liquid mixture of hydrofluoric acid and ammonium fluoride), aqueous ammonia, polymer removal solution, and the like.

  The substrate processing apparatus 1 holds a wafer W in a substantially rectangular parallelepiped processing chamber 3 defined by a side wall 2 and rotates the wafer W about a substantially vertical rotation axis C passing through the center thereof. A spin chuck 4 as a substrate rotating means, a cup 5 accommodating the spin chuck 4, a chemical nozzle 6 for supplying a chemical toward the surface (upper surface) of the wafer W held by the spin chuck 4; A DIW nozzle 7 for supplying DIW to the surface of the wafer W held by the spin chuck 4 is provided.

  The spin chuck 4 is provided at substantially equal intervals at a plurality of locations around the motor 8, a disk-shaped spin base 9 that is rotated around the vertical axis by the rotational driving force of the motor 8, and the peripheral portion of the spin base 9. And a plurality of clamping members 10 for clamping W in a substantially horizontal posture. Thus, the spin chuck 4 keeps the wafer W in a substantially horizontal posture by rotating the spin base 9 by the rotational driving force of the motor 8 in a state where the wafer W is held by the plurality of holding members 10. In this state, it can be rotated around the rotation axis C together with the spin base 9. As shown in FIGS. 2A and 2B, the spin chuck 4 is disposed in the center of the processing chamber 3 in plan view.

Note that the spin chuck 4 is not limited to a sandwiching type, and for example, the wafer W is held in a horizontal posture by vacuum suction on the back surface of the wafer W, and further rotated around a vertical rotation axis in that state. Thus, a vacuum chucking type (vacuum chuck) that can rotate the held wafer W may be employed.
The chemical nozzle 6 is, for example, a straight nozzle that discharges a chemical in a continuous flow state, and is attached to the tip of an arm 11 that extends substantially horizontally above the spin chuck 4 with its discharge port facing downward. . The base end portion of the arm 11 is supported by the upper end portion of the arm support shaft 12 extending substantially vertically on the side of the cup 5. A nozzle drive mechanism 13 is coupled to the arm support shaft 12, and the arm support shaft 12 is rotated by the driving force of the nozzle drive mechanism 13 to swing the arm 11 above the spin chuck 4. Can be done.

A chemical solution supply pipe 14 to which a chemical solution from a chemical solution supply source is supplied is connected to the chemical solution nozzle 6. In the middle of the chemical liquid supply pipe 14, a chemical liquid valve 15 for switching discharge / discharge stop of the chemical liquid from the chemical liquid nozzle 6 is interposed.
The DIW nozzle 7 is, for example, a straight nozzle that discharges DIW in a continuous flow state. The DIW nozzle 7 is fixedly disposed above the spin chuck 4 with its discharge port directed toward the vicinity of the rotation center of the wafer W. The DIW nozzle 7 is connected to a DIW supply pipe 16 to which DIW from a DIW supply source is supplied. A DIW valve 17 for switching discharge / discharge stop of DIW from the DIW nozzle 7 is interposed in the middle portion of the DIW supply pipe 16.

  A disc-shaped blocking plate (opposing member) 20 having substantially the same diameter as the wafer W is provided above the spin chuck 4. On the lower surface of the blocking plate 20, a substrate facing surface 21 made of a horizontal plane facing the surface (upper surface) of the wafer W held by the spin chuck 4 is formed. On the upper surface of the blocking plate 20, a rotation shaft 23 is fixed along an axis common to the rotation axis C of the spin chuck 4. The rotary shaft 23 is formed in a hollow shape, and a nitrogen gas flow passage (inert gas supply means) for supplying nitrogen gas as an inert gas toward the center of the surface of the wafer W is formed inside the rotary shaft 23. 24 is formed. The nitrogen gas flow passage 24 has a nitrogen gas discharge port (inert gas supply means) 25 that opens to the substrate facing surface 21. The nitrogen gas flow passage 24 is supplied with nitrogen gas via a nitrogen gas valve (inert gas supply means) 27. The rotary shaft 23 is attached near the tip of an arm 28 that extends substantially horizontally.

  The arm 28 is coupled to a shield plate lifting / lowering drive mechanism 29 for raising and lowering the shield plate 20. By this blocking plate lifting / lowering drive mechanism 29, the blocking plate 20 is separated from a proximity position (position indicated by a two-dot chain line in FIG. 1) close to the surface of the wafer W held by the spin chuck 4 and above the spin chuck 4. It can be moved up and down between the separated positions (positions indicated by solid lines in FIG. 1). The arm 28 is also coupled with a shield plate rotation drive mechanism 30 for rotating the shield plate 20 in synchronization with the rotation of the wafer W by the spin chuck 4.

  The cup 5 is for processing the chemical solution and DIW after being used for processing the wafer W, and is formed in a bottomed cylindrical container shape. The cup 5 includes a cylindrical portion 31 rising from the bottom surface thereof, and an inclined portion 32 inclined from the upper end of the cylindrical portion 31 toward the rotation axis C of the wafer W by the spin chuck 4. On the upper surface of the cup 5, an opening 33 that is partitioned by the tip of the cylindrical portion 31 and through which the wafer W passes is formed. The cylindrical portion 31 and the inclined portion 32 surround the periphery of the spin chuck 4 so that the processing liquid scattered from the peripheral edge of the wafer W can be received.

FIG. 2A is a conceptual cross-sectional view seen from the section line CC in FIG. FIG. 2B is a conceptual cross-sectional view as seen from the section line DD in FIG.
The side wall 2 of the processing chamber 3 includes a planar first inner side surface 61, a second inner side surface 62, a third inner side surface 63, and a planar fourth inner side surface 64 that surround the outer wall of the cup 5. The first to fourth inner side surfaces 61, 62, 63, 64 are combined so as to be square in plan view. A first concave curved surface 66 having a horizontal cross section recessed outward is formed between the first inner side surface 61 and the second inner side surface 62 adjacent to each other so as to face the outer wall of the processing cup 5. A second concave curved surface 67 having a horizontal cross section recessed outward is formed between the second inner side surface 62 and the third inner side surface 63 adjacent to each other so as to face the outer wall of the processing cup 5. Between the third inner side surface 63 and the fourth inner side surface 64 that are adjacent to each other, a third concave curved surface 68 having a horizontal section that is recessed outward is formed facing the outer wall of the processing cup 5. Between the fourth inner side surface 64 and the first inner side surface 61 adjacent to each other, a fourth concave curved surface 69 having a horizontal cross section recessed outward is formed opposite to the outer wall of the processing cup 5.

  The first to fourth concave curved surfaces 66 to 69 have, for example, horizontal cross sections each having an arc shape (a quarter arc shape in the examples of FIGS. 2A and 2B). The radius of curvature of the arc shape may be uniform in the height direction, and in this case, the first and fourth concave curved surfaces 66 to 69 form a cylindrical surface (partial cylindrical surface). Further, the radius of curvature of the arc shape may be smaller toward the lower side. In this case, the first and fourth concave curved surfaces 66 to 69 form an inverted conical surface (partial conical surface). . Each of the concave curved surfaces 66 to 69 may be formed so as to form a partial cylindrical surface or a partial conical surface having a vertical axis as a center axis outside the rotation axis C shown in FIGS. 2A and 2B. Further, the first and fourth concave curved surfaces 66 to 69 may be formed to form, for example, a partial cylindrical surface or a partial conical surface having the rotation axis C as a common central axis.

Hereinafter, description will be given with reference to FIGS. 1, 2A and 2B.
A pair of air supply units 41 and 42 (only the air supply unit 41 is shown in FIG. 1) are provided on the side wall 2 near the top surface of the process chamber 3 as an air supply unit for supplying clean air into the process chamber 3. Has been placed. More specifically, the air supply unit 41 has an air supply port (lateral air supply port, inner wall direction air supply port) 43 facing the internal space of the processing chamber 3. The air supply unit 42 has an air supply port (lateral air supply port, inner wall direction air supply port) 44 that faces the internal space of the processing chamber 3. The pair of air supply units 41 and 42 are formed in the same structure, shape, and size. An air supply path 47 communicating with the air supply port 43 is formed inside the air supply units 41 and 42. The air supply passage 47 is divided into upper and lower portions by a horizontal upper surface plate 45 and a lower surface plate 46, respectively. The air supply units 41 and 42 are supplied with clean air from a fan filter unit (not shown) for further supplying clean air in the clean room with a filter and supplying the clean air. The air supply ports 43 and 44 supply the gas into the processing chamber 3 through the passage 47. Therefore, clean air is supplied from the air supply ports 43 and 44 in the horizontal direction.

  The air supply unit 41 is disposed at a corner formed by the third inner side surface 63 and the fourth inner side surface 64. The air supply unit 42 is disposed at a corner formed by the first inner side surface 61 and the second inner side surface 62. That is, the air supply unit 42 is arranged on the opposite side of the air supply unit 41 with respect to the rotation axis C of the wafer W by the spin chuck 4. In other words, the pair of air supply units 41 and 42 are disposed at diagonal positions in plan view in the processing chamber 3. The air supply unit 41 is located outside the outer wall of the cup 5 in plan view. The air supply unit 42 is also located outside the outer wall of the cup 5 in plan view.

  Clean air is supplied from the air supply port 43 of the air supply unit 41 toward the fourth concave curved surface 69 along the horizontal direction. Clean air from the air supply port 43 of the air supply unit 41 flows along the fourth inner side surface 64 in a region outside the outer wall of the cup 5 in plan view. The clean air that has reached the fourth concave curved surface 69 is guided by the fourth concave curved surface 69, and the region outside the outer wall of the cup 5 in the plan view is directed toward the first concave curved surface 66. 1 flows along the inner surface 61. When the clean air flowing toward the first concave curved surface 66 reaches the first concave curved surface 66, the clean air is guided by the first concave curved surface 66, and the region outside the outer wall of the cup 5 is viewed in plan view. Then, it flows along the second inner side surface 62 toward the second concave curved surface 67.

  Clean air is supplied from the air supply port 44 of the air supply unit 42 toward the second concave curved surface 67 along the horizontal direction. Clean air from the air supply port 44 of the air supply unit 42 flows along the second inner side surface 62 in a region outside the outer wall of the cup 5 in plan view. Then, the clean air that has reached the second concave curved surface 67 is guided by the second concave curved surface 67, and the region outside the outer wall of the cup 5 in the plan view is directed toward the third concave curved surface 68. 3 flows along the inner surface 63. Then, when the clean air flowing toward the third concave curved surface 68 reaches the third concave curved surface 68, the clean air is guided by the third concave curved surface 68, and the region outside the outer wall of the cup 5 is viewed in plan view. Then, it flows along the fourth inner side surface 64 toward the fourth concave curved surface 69.

  A pair of exhaust units 51 and 52 (only the exhaust unit 51 is shown in FIG. 1) are disposed at the bottom of the process chamber 3 as exhaust units for sucking and exhausting the atmosphere in the process chamber 3. More specifically, the exhaust unit 51 has an exhaust port (lateral exhaust port, inner wall direction exhaust port) 53 facing the internal space of the processing chamber 3. The exhaust unit 52 has an exhaust port (lateral exhaust port, inner wall direction exhaust port) 54 facing the internal space of the processing chamber 3. The pair of exhaust units 51 and 52 are formed in the same structure, shape, and size. The exhaust units 51 and 52 are connected to an exhaust processing facility (not shown) that forcibly exhausts the inside of the exhaust units 51 and 52 via an exhaust pipe (not shown) (for example, an exhaust processing facility in a factory where the substrate processing apparatus 1 is installed). The atmosphere that is connected and sucked into the exhaust units 51 and 52 from the exhaust ports 53 and 54 is guided to the exhaust treatment facility through the exhaust pipe.

3A is a view as seen from an arrow E in FIG. FIG. 3B is a conceptual cross-sectional view as seen from the section line FF in FIG. 3A. The configuration of each exhaust unit 51, 52 will be described by taking the configuration of the exhaust unit 51 as an example.
In the exhaust unit 51, an exhaust path 57 communicating with the exhaust port 53 is formed. The upper and lower surfaces of the exhaust passage 57 are partitioned by an upper surface 55 and a lower surface 56 that are inclined at a predetermined angle (for example, 20 to 40 °) with respect to a horizontal plane. The upper surface 55 and the lower surface 56 are inclined downward as they move away from the rotation axis C. Therefore, the exhaust path 57 extends in an oblique direction toward the lower side as it is away from the rotation axis C, and is bent in the vertical direction in the middle thereof and connected to an exhaust pipe (not shown). The atmosphere in the processing chamber 3 is sucked obliquely downward from the exhaust ports 53 and 54 of the pair of exhaust units 51 and 52.

  The exhaust unit 51 is disposed at a corner formed by the fourth inner side surface 64 and the first inner side surface 61. Further, the exhaust unit 52 is arranged at a corner formed by the second inner side surface 62 and the third inner side surface 63. That is, the exhaust unit 52 is arranged on the opposite side of the exhaust unit 51 with respect to the rotation axis C of the wafer W by the spin chuck 4. In other words, the pair of exhaust units 51 and 52 are disposed at diagonal positions in plan view in the processing chamber 3. Further, the pair of exhaust units 51 and 52 are disposed at corners where the air supply units 41 and 42 are not disposed, that is, at positions that do not overlap with the pair of air supply units 41 and 42 in plan view. The exhaust unit 51 is located outside the outer wall of the cup 5 in plan view. The exhaust unit 52 is also located outside the outer wall of the cup 5 in plan view.

  Clean air supplied from the exhaust port 44 of the air supply unit 42 is sucked into the exhaust port 53 of the exhaust unit 51 after circling around the outer wall of the cup 5. The atmosphere in the processing chamber 3 is sucked into the exhaust port 53 from the direction along the fourth inner side surface 64 toward the fourth concave curved surface 69. Further, clean air supplied from the exhaust port 43 of the air supply unit 41 is sucked into the exhaust port 54 of the exhaust unit 52 after circling around the cup 5. The atmosphere in the processing chamber 3 is sucked into the exhaust port 54 from the direction along the second inner side surface 62 toward the second concave curved surface 67.

  Clean air is supplied to the inside of the processing chamber 3 from a pair of air supply units 41 and 42 arranged at diagonal positions, and a pair of exhaust units arranged at diagonal positions by an exhaust treatment facility (not shown). When the insides of the gas supply units 51 and 52 are forcibly exhausted, the clean air supplied in the horizontal direction from the pair of air supply units 41 and 42 circulates around the cup 5 to form a pair of exhaust units 51 and 52. It will come down toward. Therefore, a spiral airflow is formed in the processing chamber 3 that descends while circling clockwise around the cup 5 (in the direction of the arrow AR in FIGS. 2A and 2B) around the cup 5. There are few obstacles such as the blocking plate 20 in the region outside the outer wall of the cup 5. Therefore, almost no turbulent airflow (convection) due to interference with obstacles such as the blocking plate 20 is generated in the spiral airflow, and a stable spiral descending airflow is formed. Further, it is preferable that the rotating direction of the spiral airflow (the direction of the arrow AR in FIGS. 2A and 2B) coincides with the rotation direction of the spin chuck 4 and the blocking plate 20. In this way, the generation of turbulent airflow (convection) can be further suppressed, and a more stable spiral descending airflow can be formed.

  In particular, in this embodiment (first embodiment), a pair of air supply units 41, 42 are provided at positions that sandwich the rotation axis C of the wafer W by the spin chuck 4. A pair of exhaust units 51 and 52 is provided at a position sandwiching the rotation axis C of the wafer W by the spin chuck 4. Therefore, since a moment can be effectively applied to the airflow, a stronger airflow is formed in the processing chamber 3, and the spiral downflow is further stabilized. ing.

  With such a configuration, a stable vortex descending airflow can be formed in the processing chamber 3, and even if the airflow is disturbed by the rotation of the spin chuck 4, convection is generated in the processing chamber 3. Can be suppressed or prevented. As a result, the airflow in the processing chamber 3 can be stabilized even if the exhaust power of the exhaust equipment provided in the factory is not large. Thereby, since the winding-up of the process liquid mist etc. in the process chamber 3 can be suppressed or prevented, the contamination in the process chamber 3 can be suppressed. Therefore, higher quality (high cleanliness) substrate processing can be performed.

FIG. 4 is a block diagram showing an electrical configuration of the substrate processing apparatus 1.
The substrate processing apparatus 1 includes a control device 35 having a configuration including a microcomputer. The control device 35 is connected with the motor 8, the nozzle drive mechanism 13, the shield plate rotation drive mechanism 30, the shield plate lifting / lowering drive mechanism 29, the chemical solution valve 15, the DIW valve 17, the nitrogen gas valve 27, and the like as control targets.

FIG. 5 is a flowchart for explaining a processing example performed in the substrate processing apparatus 1.
While the wafer W is being processed, clean air is always supplied into the processing chamber 3 from the pair of air supply units 41 and 42, and a pair of exhaust units 51 and 52 is provided by an exhaust processing facility (not shown). The inside is forcibly exhausted. For this reason, a spiral airflow that descends while circling around the cup 5 is formed in the processing chamber 3.

The wafer W to be processed is loaded into the substrate processing apparatus 1 by a transfer robot (not shown) and is held by the spin chuck 4 with its surface facing upward (step S1). At the time of loading the wafer W, the blocking plate 20 is disposed at a spaced position spaced upward from the spin base 7 of the spin chuck 4 so as not to hinder the loading.
When the wafer W is held on the spin chuck 4, the control device 35 controls the motor 8 to start the rotation of the wafer W (spin base 9) by the spin chuck 4, and sets the rotation speed of the wafer W to a predetermined value. The liquid processing speed (for example, 1500 rpm) is increased. Further, the control device 35 controls the nozzle driving mechanism 13 to swing the arm 10 to move the chemical nozzle 6 from the side retracted position of the spin chuck 4 to the position above the wafer W. Further, the control device 35 controls the nitrogen gas valve 27 to discharge nitrogen gas from the nitrogen gas discharge port 25 (step S2). Thereby, nitrogen gas is supplied to the space between the surface of the wafer W and the substrate facing surface 21 of the blocking plate 20, and the space is prevented from having a negative pressure as compared with the lateral region of the wafer W. .

  When the rotation speed of the wafer W reaches the liquid processing speed, the control device 35 opens the chemical liquid valve 15 and discharges the chemical liquid from the discharge port of the chemical liquid nozzle 6 toward the rotation center of the surface of the wafer W. The chemical solution supplied to the surface of the wafer W flows toward the periphery of the wafer W due to the centrifugal force generated by the rotation of the wafer W. Thereby, the chemical treatment using the chemical solution is performed on the surface of the wafer W (step S3).

When a predetermined chemical solution processing time has elapsed from the start of supply of the chemical solution to the wafer W, the control device 35 closes the chemical solution valve 15 and stops the discharge of the chemical solution from the chemical solution nozzle 6. Further, the control device 35 controls the nozzle driving mechanism 12 to swing the arm 10 to retract the chemical nozzle 6 from the upper position of the wafer W to the retracted position on the side of the spin chuck 4.
When the supply of the chemical liquid to the wafer W is stopped, the control device 35 opens the DIW valve 17 and discharges DIW from the discharge port of the DIW nozzle 7 toward the rotation center of the surface of the wafer W in a rotating state. . The DIW supplied to the surface of the wafer W flows toward the periphery of the wafer W due to the centrifugal force generated by the rotation of the wafer W. Thereby, the chemical solution adhering to the surface of the wafer W is washed away by the DIW (step S4).

  When a predetermined rinsing time has elapsed from the start of DIW supply, the control device 35 closes the DIW valve 17 and stops supplying DIW to the wafer W. Thereafter, the control device 35 controls the shield plate lifting / lowering drive mechanism 29 to bring the shield plate 20 close to a separation position (a position indicated by a solid line in FIG. 1) (a position indicated by a two-dot chain line in FIG. 1). (Step S5). When the blocking plate 20 is lowered to the close position, a narrow space is formed between the surface of the wafer W and the substrate facing surface 21. Since the discharge of the nitrogen gas from the nitrogen gas discharge port 25 is continued, the nitrogen gas is supplied to the narrow space between the surface of the wafer W and the substrate facing surface 21.

Further, the control device 35 controls the motor 8 to increase the rotation speed of the wafer W to a spin dry rotation speed (for example, 3000 rpm). Thereby, a spin dry process is performed in which DIW adhering to the surface of the wafer W after the rinsing process is spun off by a centrifugal force and dried (step S6).
Furthermore, at the time of spin dry processing, the control device 35 controls the shield plate rotation drive mechanism 30 to rotate the shield plate 20 in the same direction as the rotation direction of the wafer W in synchronization with the rotation of the wafer W. As a result, a stable air flow is formed in a narrow space between the surface of the wafer W and the blocking plate 20.

  When the spin dry process is performed for a predetermined spin dry time, the control device 35 controls the motor 8 to stop the rotation of the spin chuck 4 and controls the blocking plate rotation drive mechanism 30 to control the blocking plate 20. Stop rotating. Further, the control device 35 closes the nitrogen gas valve 27 and stops the discharge of the nitrogen gas from the nitrogen gas discharge port 25 (step S7). Furthermore, the control device 35 controls the shield plate lifting / lowering drive mechanism 29 to raise the shield plate 20 to the separated position (step S7). Thereafter, the wafer W is unloaded by a transfer robot (not shown) (step S8).

FIG. 6A is a perspective view conceptually showing the structure of the processing chamber 71 of the substrate processing apparatus 70 according to another embodiment (second embodiment) of the present invention. FIG. 6B is a cross-sectional view conceptually showing the structure of the substrate processing apparatus 70.
In the second embodiment, portions corresponding to the respective portions shown in the embodiment (first embodiment) shown in FIGS. 1 to 5 are denoted by the same reference numerals as those in the first embodiment, and described. Is omitted. Moreover, about the structure inside the cup 5 and the structure of a process liquid supply system, FIG. 1 is referred together as needed.

  The substrate processing apparatus 70 according to the second embodiment includes a substantially columnar processing chamber 71 partitioned by a substantially cylindrical side wall 72. The inner surface of the side wall 72 is formed on a cylindrical surface 72 </ b> A centering on the rotation axis C of the wafer W by the spin chuck 4. In the processing chamber 71, the spin chuck 4 (see FIG. 1), the cup 5, the chemical solution nozzle 6 (see FIG. 1), the blocking plate 20, and the like are accommodated, as in the first embodiment.

  An air supply unit 41 for supplying clean air into the processing chamber 71 is disposed on the side wall 72 near the top surface of the processing chamber 71. The air supply unit 41 is located outside the outer wall of the cup 5 in plan view. Clean air is supplied from the air supply port 43 of the air supply unit 41 along the cylindrical surface 72A of the side wall 72 in the horizontal direction. Clean air from the air supply port 43 of the air supply unit 41 is guided by the cylindrical surface 72A of the side wall 72, and the rotation axis C of the wafer W by the spin chuck 4 passes through the region outside the outer wall of the cup 5 in plan view. It begins to flow like an arc as the center.

  An exhaust unit 51 for sucking and exhausting the atmosphere in the processing chamber 71 is disposed at the bottom of the processing chamber 71. Specifically, the exhaust unit 51 is disposed on the opposite side to the rotation axis C of the wafer W by the spin chuck of the air supply unit 41 in a front view. The exhaust unit 51 is located outside the outer wall of the cup 5 in plan view. The atmosphere in the processing chamber 71 is sucked into the exhaust port 53 of the exhaust unit 51 from the direction along the cylindrical surface 72A (the rotational direction of the spiral airflow).

  When clean air is supplied from the air supply unit 41 to the inside of the processing chamber 71 and the exhaust unit 51 is forcibly exhausted by an exhaust processing facility (not shown), the air supply unit 41 is directed horizontally. The clean air supplied in this manner circulates around the cup 5 and then forms an airflow sucked into the exhaust unit 51. Therefore, a spiral airflow that descends while circling around the cup 5 is formed in the processing chamber 3. There are few obstacles such as the blocking plate 20 in the region outside the outer wall of the cup 5. Therefore, almost no turbulent airflow (convection) due to interference with obstacles such as the blocking plate 20 is generated in the spiral airflow, and a stable spiral descending airflow is formed.

In this embodiment (second embodiment), the gas supplied from the air supply port 41 is guided by the cylindrical surface 72A and rectified into an arc shape. Thereby, a spiral airflow is more easily formed in the processing chamber 71.
FIG. 7A is a perspective view conceptually showing the structure of the processing chamber 81 of the substrate processing apparatus 80 according to another embodiment (third embodiment) of the present invention. FIG. 7B is a cross-sectional view conceptually showing the structure of the substrate processing apparatus 80.

In the third embodiment, portions corresponding to those shown in the embodiment (first embodiment) shown in FIGS. 1 to 5 are denoted by the same reference numerals as those in the first embodiment, and are described. Is omitted. Moreover, about the structure inside the cup 5 and the structure of a process liquid supply system, FIG. 1 is referred together as needed.
The substrate processing apparatus 80 according to the third embodiment includes an inverted truncated cone processing chamber 81 that becomes narrower, for example, as it goes downward. The processing chamber 81 is partitioned by a cone-shaped (inverted conical) side wall 82. The inner surface of the side wall 82 is formed as a cone-shaped surface (inverted conical surface) 82 </ b> A centering on the rotation axis C of the wafer W by the spin chuck 4. In the processing chamber 81, the spin chuck 4 (see FIG. 1), the cup 5, the chemical solution nozzle 6 (see FIG. 1), the blocking plate 20, and the like are accommodated, as in the first embodiment.

  An air supply unit 41 for supplying clean air into the processing chamber 81 is disposed on the side wall 82 near the top surface of the processing chamber 81. The air supply unit 41 is located outside the outer wall of the cup 5 in plan view. Clean air is supplied from the air supply port 43 of the air supply unit 41 along the cone-shaped surface 82A of the side wall 82 in the horizontal direction. Clean air from the air supply port 43 of the air supply unit 41 is guided by the cone-shaped surface 82A of the side wall 82, and a region outside the outer wall of the cup 5 in a plan view is formed on the wafer by the spin chuck 4 (see FIG. 1). It flows so as to draw an arc around the rotation axis C of W.

  At the bottom of the processing chamber 81, an exhaust unit 51 for sucking and exhausting the atmosphere in the processing chamber 81 is disposed. Specifically, the exhaust unit 51 is disposed on the opposite side to the rotation axis C of the wafer W by the spin chuck of the air supply unit 41 in a front view. The exhaust unit 51 is located outside the outer wall of the cup 5 in plan view. The atmosphere in the processing chamber 81 is sucked into the exhaust port 53 of the exhaust unit 51 from the direction along the cone-shaped surface 82A (the rotational direction of the spiral airflow).

  When clean air is supplied from the air supply unit 41 to the inside of the processing chamber 81 and the exhaust unit 51 is forcibly exhausted by an exhaust processing facility (not shown), the air supply unit 41 is directed horizontally. The clean air supplied in this manner circulates around the cup 5 and forms an airflow sucked into the exhaust unit 51. Therefore, a spiral airflow that descends while circling around the cup 5 is formed in the processing chamber 81. There are few obstacles such as the blocking plate 20 in the region outside the outer wall of the cup 5. Therefore, the turbulent airflow hardly generates turbulence (convection) due to interference with the obstacle 20 such as the blocking plate, and a stable spiral descending airflow is formed.

In this embodiment (third embodiment), clean air supplied from the air supply port 43 of the air supply unit 41 is guided by the cone-shaped surface 82A and rectified into an arc shape. Thereby, a spiral airflow is more easily formed in the processing chamber 81.
Furthermore, since the cone-shaped surface 82A is narrowed downward, a relatively strong airflow is formed not only near the top plate of the processing chamber 81 but also near the bottom of the processing chamber 81. Thereby, a stronger airflow can be formed in the processing chamber 81.

Although three embodiments of the present invention have been described above, the present invention can be implemented in other forms.
In the above-described three embodiments, the clean air is supplied from the air supply ports 43 and 44 of the air supply units 41 and 42 in the horizontal direction. However, the air supply ports of the air supply units 41 and 42 are described. The clean air may be supplied from 43 and 44 obliquely downward.

In the above-described three embodiments, it has been described that the atmosphere in the processing chambers 3, 71, 81 is sucked obliquely downward from the exhaust ports 53, 54 of the exhaust units 51, 52. The atmosphere in the processing chambers 3, 71, 81 may be sucked from the horizontal direction through the 52 exhaust ports 53, 54.
In the first embodiment described above, a configuration in which a pair of air supply units 41 and 42 are provided and a pair of exhaust units 51 and 52 are provided has been described as an example. However, three or four air supply units can be provided. In this case, two of the air supply units may be arranged diagonally in a plan view at the corner of the processing chamber 3, and the remaining air supply units may be arranged at the remaining corner of the processing chamber 3. Of course, five or more air supply units may be provided.

In the first embodiment, three or four exhaust units may be provided. In this case, two of the exhaust units may be disposed diagonally at the corner of the processing chamber 3 in plan view, and the remaining exhaust units may be disposed at the remaining corner of the processing chamber 3. Of course, five or more exhaust units may be provided.
In the first embodiment, the pair of air supply units 41 and 42 and the pair of exhaust units 51 and 52 that are arranged diagonally in plan view are arranged at positions that do not overlap, but overlap in plan view. You may arrange in.

Moreover, when providing a pair of air supply units in the first embodiment described above, the pair of air supply units may be arranged at adjacent corners. Further, when a pair of exhaust units are provided, the pair of exhaust units may be arranged at adjacent corners.
Moreover, in 1st Embodiment, the concave curved surfaces 66-69 can also be made into the shape which becomes wide as it goes below. In this case, the shape of the inner wall can be made close to a circle in plan view near the bottom of the processing chamber 3. By adopting this configuration, the eddy current can be efficiently rectified, so that a relatively strong air current can be formed even near the bottom of the processing chamber 3.

  In the second and third embodiments described above, the exhaust unit 51 is arranged on the opposite side of the air supply unit 41 and the rotation axis C in plan view. However, the exhaust unit 51 and the air supply unit are arranged. The relative position in plan view with 41 is not limited to this. For example, the exhaust unit 51 can be arranged at the same position as the air supply unit 41 in a plan view (that is, the air supply unit and the exhaust unit are arranged in the vertical direction).

  In the second and third embodiments described above, the case where the air supply unit 41 and the exhaust unit 51 are arranged one by one has been described as an example. However, two or more air supply units 41 may be provided. In this case, the air supply units 41 are preferably arranged at equal angular intervals around the rotation axis C (that is, at equal intervals along the circumferential direction of the cylindrical surface 72A or the cone-shaped surface 82A). Two or more exhaust units may be provided. In this case, the exhaust units 51 are preferably arranged at equal angular intervals around the rotation axis C (that is, at equal intervals along the circumferential direction of the cylindrical surface 72A or the cone-shaped surface 82A).

Further, spiral ridges and grooves are formed on the inner surfaces of the side walls 2, 72, 82 of the processing chambers 3, 71, 81, and these ridges and grooves make the processing chamber 3, 3 from the air supply unit. The clean air supplied into 71 and 81 may be guided and rectified in a spiral shape.
Moreover, in 1st Embodiment, although the wall surface of the processing chamber 3 was shape | molded and it demonstrated and demonstrated as an example the structure which rectifies | straightens a spiral airflow using the wall surface after this shaping, It is also possible to employ a configuration in which the airflow in the processing chamber 3 is rectified by such a rectifying member, arranged at the corners (corner portions) 3.

  In addition, various design changes can be made within the scope of matters described in the claims.

It is sectional drawing which shows notionally the structure of the substrate processing apparatus which concerns on 1st Embodiment of this invention. FIG. 3 is a conceptual cross-sectional view as seen from a section line CC in FIG. 1. FIG. 2 is a conceptual cross-sectional view seen from a section line DD in FIG. 1. It is the figure seen from the arrow E of FIG. FIG. 3B is a conceptual cross-sectional view seen from the section line FF in FIG. 3A. It is a block diagram which shows the electric constitution of the said substrate processing apparatus. It is a flowchart for demonstrating the example of a process performed with the said substrate processing apparatus. It is a perspective view which shows notionally the structure of the process chamber of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. It is a cross-sectional view which shows notionally the structure of the substrate processing apparatus of the said 2nd Embodiment. It is a perspective view which shows notionally the structure of the process chamber of the substrate processing apparatus which concerns on 3rd Embodiment of this invention. It is a cross-sectional view which shows notionally the structure of the substrate processing apparatus of the said 3rd Embodiment.

Explanation of symbols

1, 70, 80 Substrate processing device 2, 72, 82 Side wall 3, 71, 81 Processing chamber 4 Spin chuck 5 Cup 20 Blocking plate (opposing member)
21 Substrate facing surface 24 Nitrogen gas flow passage (inert gas supply means)
25 Nitrogen gas outlet (inert gas supply means)
27 Nitrogen gas valve (inert gas supply means)
41, 42 Air supply unit (air supply part)
43, 44 Air supply port (lateral air supply port, inner wall air supply port)
51,52 Exhaust unit (exhaust part)
53,54 Exhaust port (lateral exhaust port, inner wall exhaust port)
66 First concave curved surface 67 Second concave curved surface 68 Third concave curved surface 69 Fourth concave curved surface 72A Cylindrical surface 82A Cone-shaped surface W Wafer (substrate)

Claims (11)

A processing chamber surrounded by the sidewalls for processing the substrate therein;
Substrate holding means for holding the substrate inside the processing chamber;
A cylindrical cup surrounding the substrate holding means;
An air supply unit disposed in an upper part of the processing chamber and an exhaust unit disposed in a lower part of the processing chamber, so that a spiral airflow is formed in the processing chamber; supplies the gas toward the inside of the processing chamber, from the exhaust unit, viewed contains a supply and exhaust means for exhausting the atmosphere inside the processing chamber,
The air supply unit includes a lateral air supply port for supplying gas in the lateral direction,
The exhaust unit, the atmosphere in the process chamber, including a lateral outlet for exhausting sucking laterally, the substrate processing apparatus. A processing chamber surrounded by the sidewalls for processing the substrate therein;
Substrate holding means for holding the substrate inside the processing chamber;
A cylindrical cup surrounding the substrate holding means;
An air supply unit disposed in an upper part of the processing chamber and an exhaust unit disposed in a lower part of the processing chamber, so that a spiral airflow is formed in the processing chamber; Supply and exhaust means for supplying gas toward the inside of the processing chamber and exhausting the atmosphere inside the processing chamber from the exhaust unit,
The air supply unit includes an inner wall direction air supply port that supplies gas in a direction along the inner wall,
The exhaust unit, the atmosphere in the process chamber, including an inner wall direction outlet for exhausting inhale from the direction along the inner wall, board processor.   The said inner wall contains the rectification | straightening wall which guides the gas supplied into the inside of the said process chamber from the said air supply port, and rectifies | straightens so that the said spiral airflow may be formed. Substrate processing equipment. A processing chamber surrounded by the sidewalls for processing the substrate therein;
Substrate holding means for holding the substrate inside the processing chamber;
A cylindrical cup surrounding the substrate holding means;
An air supply unit disposed in an upper part of the processing chamber and an exhaust unit disposed in a lower part of the processing chamber, so that a spiral airflow is formed in the processing chamber; Supply and exhaust means for supplying gas toward the inside of the processing chamber and exhausting the atmosphere inside the processing chamber from the exhaust unit,
Said inner wall, from the air inlet, to guide the inner to the supplied gas in the processing chamber, including a baffle wall for rectifying such a stream of the vortex is formed, board processor.   The substrate processing apparatus according to claim 4, wherein the rectifying wall includes a concave curved surface having a horizontal cross section recessed outward.   The substrate processing apparatus according to claim 5, wherein the concave curved surface is a cylindrical surface centered on a predetermined vertical axis.   The substrate processing apparatus according to claim 5, wherein the concave curved surface is a cone-shaped surface centered on a predetermined vertical axis. A processing chamber surrounded by the sidewalls for processing the substrate therein;
Substrate holding means for holding the substrate inside the processing chamber;
A cylindrical cup surrounding the substrate holding means;
An air supply unit disposed in an upper part of the processing chamber and an exhaust unit disposed in a lower part of the processing chamber, so that a spiral airflow is formed in the processing chamber; Supply and exhaust means for supplying gas toward the inside of the processing chamber and exhausting the atmosphere inside the processing chamber from the exhaust unit,
The air supply unit, a position sandwiching the cup in a plan view, are a pair arranged, board processor.   The substrate processing apparatus according to claim 1, further comprising a facing member facing the substrate held by the substrate holding unit from above. The substrate holding means holds the substrate in a horizontal position;
The substrate processing apparatus according to claim 9, wherein the facing member is a plate-like member having a substrate facing surface composed of a horizontal surface facing the upper surface of the substrate held by the substrate holding means.   The substrate processing apparatus according to claim 10, further comprising an inert gas supply unit configured to supply an inert gas between the substrate held by the substrate holding unit and the substrate facing surface.

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