JP5865093B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

2. Description of the Related Art A single-wafer type substrate processing apparatus is known that processes substrates such as semiconductor wafers and glass substrates for liquid crystal display devices one by one.
A single-wafer type substrate processing apparatus described in Patent Document 1 includes a substrate mounting plate disposed in a processing chamber, an annular member that supports a lower peripheral edge of the substrate on the substrate mounting plate, and an inner side of the annular member. A plurality of spheres that support the lower surface of the substrate, and an annular member and a supply device that supplies vaporized HMDS to the upper surface of the substrate horizontally supported by the sphere.

  The substrate processing apparatus further includes a substrate mounting plate through a through hole provided in the substrate mounting plate in order to prevent vaporized HMDS from entering between the upper surface of the substrate mounting plate and the lower surface of the substrate. A first exhaust device that exhausts the gas between the substrate and the substrate, and closes the peripheral edge of the lower surface of the substrate to the annular member; and a second exhaust device that exhausts the gas in the processing chamber through an exhaust port provided in the bottom surface of the processing chamber And an exhaust device.

JP 2010-219435 A

  In a manufacturing process of a semiconductor device or a liquid crystal display device, a vaporized processing gas such as HMDS or a processing solution such as a chemical solution or a rinsing solution is supplied to the upper surface of the substrate. Therefore, a contaminated atmosphere (atmosphere containing processing components and particles) that contaminates the substrate may occur on the substrate. In the substrate processing apparatus of Patent Document 1, the processing chamber is exhausted by the second exhaust device. However, since the exhaust port is provided on the bottom surface of the processing chamber, the contaminated atmosphere on the substrate cannot be directly sucked even if the suction force of the second exhaust device is increased. For this reason, a stagnant area of the atmosphere is generated on the substrate, and the contaminated atmosphere may not be exhausted reliably.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reduce substrate contamination due to contact with a contaminated atmosphere.

In order to achieve the above object, according to the first aspect of the present invention, there is provided a substrate holding means (3) for holding the substrate (W) horizontally, and supplying a processing liquid to the upper surface of the substrate held by the substrate holding means. The processing liquid supply means (5 to 10), the guard includes a cylindrical outer guard (55 to 57) surrounding the substrate holding means, and the substrate holding means between the substrate holding means and the outer guard. The substrate includes a cylindrical inner guard (54 to 56) that surrounds the substrate, and sucks gas into a plurality (preferably three or more) of suction ports (59a ) arranged in the circumferential direction to generate a radially expanding air flow on the substrate. a cylindrical guard which forms the top (54-57) seen including, the outer guard, the comprises a tubular upper portion disposed above the substrate, the inner circumferential surface of the upper portion of the outer guard The plurality of suction ports are formed in the front guard, and the inner guard The substrate processing apparatus (1) includes a cylindrical upper end disposed below the substrate, and the plurality of suction ports are formed on an inner peripheral surface of the upper end of the inner guard .

According to this configuration, the gas on the substrate held horizontally by the substrate holding means is sucked into the plurality of suction ports formed on the inner peripheral surface of the cylindrical guard surrounding the substrate holding means. The plurality of suction ports are arranged in the circumferential direction of the guard. Accordingly, a radially expanding air flow, that is, an air flow extending outward from the center of the substrate, is formed on the substrate, and the gas on the substrate is directly sucked into the plurality of suction ports. Therefore, even if a contaminated atmosphere that contaminates the substrate is generated on the substrate by supplying the processing liquid from the processing liquid supply means to the substrate, this atmosphere is surely discharged from the substrate. Therefore, diffusion of the contaminated atmosphere can be suppressed or prevented, and contamination of the substrate due to contact with the contaminated atmosphere can be reduced. Thereby, the cleanliness of the substrate can be increased.
Further, according to this configuration, the plurality of suction ports arranged in the circumferential direction are formed on the inner peripheral surface of the upper end portion of the outer guard. Similarly, a plurality of suction ports arranged in the circumferential direction are formed on the inner peripheral surface of the upper end portion of the inner guard. The upper end portion of the outer guard is disposed above the substrate, and the upper end portion of the inner guard is disposed below the substrate. Accordingly, the gas on the substrate is sucked obliquely upward toward the upper end portion of the outer guard and is also sucked obliquely downward toward the upper end portion of the inner guard. Thereby, the diffusion range of the contaminated atmosphere in the vertical direction can be narrowed.

The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the plurality of suction ports are arranged at equal intervals in the circumferential direction of the guard.
According to this configuration, since the plurality of suction ports are arranged at equal intervals in the circumferential direction of the guard, a uniform air current spreading radially is formed on the substrate. Therefore, generation | occurrence | production of the residence area | region of atmosphere can be suppressed or prevented. Therefore, the contaminated atmosphere can be reliably discharged.

According to a third aspect of the present invention, the guard starts the suction of gas to the plurality of suction ports before the supply of the processing liquid from the processing liquid supply means to the substrate is started, and the processing liquid supply The substrate processing apparatus according to claim 1, wherein gas is sucked into the plurality of suction ports in parallel with supply of the processing liquid from the means to the substrate.
According to this configuration, before the supply of the processing liquid from the processing liquid supply unit to the substrate is started, the suction of the gas to the suction port is started, so that the suction port is sucking the gas, The processing liquid from the processing liquid supply means is supplied to the substrate. Therefore, the contaminated atmosphere can be reliably discharged, and the contamination of the substrate can be reduced.

According to a fourth aspect of the present invention, in the guard according to the third aspect, after the supply of the processing liquid from the processing liquid supply means to the substrate is completed, the suction of the gas to the plurality of suction ports is terminated. This is a substrate processing apparatus.
According to this configuration, after the supply of the processing liquid from the processing liquid supply unit to the substrate is finished, the suction of the gas to the suction port is finished, so that the contaminated atmosphere remains after the supply of the processing liquid is finished. However, this contaminated atmosphere can be reliably discharged. Thereby, the contamination of the substrate can be reduced.

The invention according to claim 5 is the substrate processing apparatus according to any one of claims 1 to 4 , further comprising a suction device (64) connected to each of the plurality of suction ports.
According to this configuration, the suction force from the suction device is transmitted to each suction port, and the gas on the substrate is sucked into each suction port. That is, since each suction port is connected to a common suction device, it is not necessary to provide a plurality of suction devices. Therefore, the complexity of the configuration of the substrate processing apparatus can be suppressed or prevented.

The invention according to claim 6 further includes a facing member (4) including a facing surface (4x) facing the entire upper surface of the substrate held by the substrate holding means, and the guard faces the substrate. It is a substrate processing apparatus as described in any one of Claims 1-5 which attracts | sucks the gas between members to these suction ports.
According to this configuration, since the facing surface of the facing member is disposed above the substrate, the diffusion of the contaminated atmosphere is suppressed or prevented by the facing member. Furthermore, since the guard sucks the gas between the upper surface of the substrate and the facing surface of the facing member into the plurality of suction ports, the contaminated atmosphere can be reliably discharged. Therefore, contamination of the substrate due to contact with the contaminated atmosphere can be more reliably reduced.

According to a seventh aspect of the present invention, the counter member is opened at a position in the counter surface that faces the central portion of the substrate, and a central opening (4b) that discharges gas toward the upper surface of the substrate. The substrate processing apparatus according to claim 6 , further comprising:
According to this configuration, gas is discharged from the central opening that opens on the facing surface. The central opening faces the central portion of the substrate. Therefore, the gas discharged from the central opening spreads radially between the substrate and the opposing member. Therefore, the gas between the substrate and the opposing member is not only drawn outward by the suction force from the plurality of suction ports, but is also pushed outward by the gas discharged from the central opening. As a result, the gas between the substrate and the opposing member is discharged around the substrate and sucked into the plurality of suction ports. Therefore, the contaminated atmosphere can be reliably discharged, and contamination of the substrate due to contact with the contaminated atmosphere can be more reliably reduced.

Invention of Claim 8 is the substrate processing method performed by the substrate processing apparatus as described in any one of Claims 1-7, Comprising: The holding process which hold | maintains a board | substrate horizontally by the said board | substrate holding means, , in parallel with the holding step, a treatment liquid supplying step of supplying a processing liquid to the upper surface of the substrate by the process liquid supply means, in parallel with the holding step, by sucking the gas to the plurality of suction ports And a suction step of forming a radially expanding airflow on the substrate. According to this method, an effect similar to the effect described in regard to the invention of claim 1 can be obtained.

  In this section, alphanumeric characters in parentheses represent reference numerals of corresponding components in the embodiments described later, but the scope of the claims is not limited by these reference numerals.

It is the schematic diagram which looked at the substrate processing apparatus concerning one embodiment of the present invention from the horizontal direction. It is the typical fragmentary sectional view which looked at a part of spin chuck and a guard from the horizontal direction. It is a top view of a spin chuck and a cup. It is a schematic diagram for demonstrating an example of the process of the board | substrate performed with a substrate processing apparatus.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic view of a substrate processing apparatus 1 according to an embodiment of the present invention viewed from a horizontal direction.
The substrate processing apparatus 1 is a single wafer processing apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a processing chamber 2, a spin chuck 3 (substrate holding means) that holds the substrate W horizontally and rotates it around a vertical reference line A 1 that passes through the center of the substrate W, and an upper surface of the substrate W. And an opposing shielding plate 4 (opposing member). The substrate processing apparatus 1 further includes a plurality of nozzles 5 to 10 (processing liquid supply means) for supplying a processing fluid such as liquid or gas to the substrate W, a cylindrical cup 11 surrounding the spin chuck 3, and a substrate processing. And a control device 12 that controls the operation of the device provided in the device 1 and the opening and closing of the valve. The plurality of nozzles includes three scan nozzles 5 to 7, a fixed nozzle 8, a two-fluid nozzle 9, and a central axis nozzle 10.

  The processing chamber 2 includes a box-shaped partition wall 14 that is opened and closed by a shutter 13, and an FFU 15 (fan filter unit) as a blower unit that sends clean air from above the partition wall 14 into the partition wall 14 (corresponding to the processing chamber 2). ) And an exhaust device 16 for discharging the gas in the processing chamber 2 from the lower part of the partition wall 14. The spin chuck 3, the blocking plate 4, the nozzles 5 to 10, and the cup 11 are disposed in the partition wall 14. The FFU 15 is disposed above the partition wall 14 and attached to the ceiling of the partition wall 14. The FFU 15 sends clean air from the ceiling of the partition wall 14 into the processing chamber 2. The exhaust device 16 is connected to the bottom of the cup 11 and sucks the gas in the processing chamber 2 from the bottom of the cup 11. The FFU 15 and the exhaust device 16 form a down flow (downflow) in the processing chamber 2. The processing of the substrate W is performed in a state where a down flow is formed in the processing chamber 2.

  The spin chuck 3 is disposed below the FFU 15. The spin chuck 3 includes a disk-shaped spin base 17 that holds the substrate W horizontally, and a spin motor 18 that rotates the spin base 17 around a reference line A1. The spin chuck 3 holds the substrate W horizontally without contacting the upper surface of the substrate W. The spin chuck 3 may be a holding chuck that holds the substrate W horizontally with the substrate W held in the horizontal direction, or by adsorbing the back surface (lower surface) of the substrate W that is a non-device forming surface. A vacuum chuck that holds the substrate W horizontally may be used. FIG. 1 shows a case where the spin chuck 3 is a clamping chuck.

  The blocking plate 4 has a disk shape having a diameter larger than that of the substrate W. The blocking plate 4 is supported in a horizontal posture by a support shaft 19 extending in the vertical direction. The support shaft 19 is supported by a support arm 20 that extends horizontally above the blocking plate 4. The blocking plate 4 is disposed below the support shaft 19. The central axis of the shielding plate 4 is disposed on the reference line A1. The lower surface 4x (opposing surface) of the blocking plate 4 is opposed to the upper surface of the substrate W. The shield plate 4 is connected to the shield plate rotating unit 21 and the shield plate lifting / lowering unit 22. The shielding plate rotating unit 21 rotates the shielding plate 4 around the reference line A1 with respect to the support arm 20. The shielding plate lifting / lowering unit 22 raises and lowers the support arm 20 in the vertical direction together with the shielding plate 4 and the support shaft 19.

  The shield plate lifting / lowering unit 22 is provided between the proximity position in which the lower surface 4x of the shield plate 4 is close to the upper surface of the substrate W held by the spin chuck 3 and the retracted position provided above the proximity position. Raise and lower. The shield plate lifting / lowering unit 22 can hold the shield plate 4 at, for example, four positions (a proximity position, a lower intermediate position, an upper intermediate position, and a retracted position). The lower intermediate position is a position between the proximity position and the retracted position, and the upper intermediate position is a position between the lower intermediate position and the retracted position. The lower intermediate position is set to a height at which the scan nozzles 5 to 7 and the two-fluid nozzle 9 cannot enter between the substrate W and the blocking plate 4, and the upper intermediate position is the scan nozzles 5 to 7 and the two-fluid. The nozzle 9 is set to a height that allows the nozzle 9 to enter between the substrate W and the blocking plate 4. FIG. 1 shows a state in which the blocking plate 4 is located at the upper middle position.

  The central axis nozzle 10 extends in the vertical direction along a vertical axis passing through the centers of the blocking plate 4 and the substrate W, that is, the reference line A1. The central axis nozzle 10 is disposed above the spin chuck 3. The central axis nozzle 10 is supported by a support arm 20. The central axis nozzle 10 cannot rotate with respect to the support arm 20. The central shaft nozzle 10 moves up and down together with the blocking plate 4, the support shaft 19 and the support arm 20. The support shaft 19 has a cylindrical shape, and its internal space communicates with a through hole that vertically penetrates the central portion of the blocking plate 4. The through hole opens at the center of the lower surface 4 x of the blocking plate 4. The central shaft nozzle 10 is inserted into the support shaft 19. The lower surface of the central axis nozzle 10 is disposed at the same height as the lower surface 4x of the blocking plate 4 or above the lower surface 4x of the blocking plate 4. The central axis nozzle 10 is surrounded by a cylindrical flow path 23 formed around the central axis nozzle 10. The lower end of the cylindrical channel 23 forms an annular opening surrounding the central axis nozzle 10.

  The central axis nozzle 10 includes a cylindrical case 24 extending in the vertical direction, and two tubes 25 and 26 (a liquid tube 25 and a gas tube 26) inserted into the case 24. Each tube 25, 26 extends in the vertical direction, and the opening provided at the lower end of each tube 26, 26 is arranged at the same height as the lower end of the case 24. The cylindrical flow path 23 surrounds the case 24. The liquid tube 25 is connected to a central rinse liquid pipe 28 provided with a central rinse liquid valve 27, and the gas tube 26 is connected to a central gas pipe 30 provided with a central gas valve 29. ing. The cylindrical flow path 23 is connected to an ambient gas pipe 32 in which an ambient gas valve 31 is interposed.

  When the central rinse liquid valve 27 is opened, the rinse liquid supplied from the central rinse liquid pipe 28 to the central axis nozzle 10 is discharged downward from the lower surface of the central axis nozzle 10. Similarly, when the central gas valve 29 is opened, the gas supplied to the central axis nozzle 10 is discharged downward from the lower surface of the central axis nozzle 10. When the ambient gas valve 31 is opened, the gas supplied from the ambient gas pipe 32 to the cylindrical channel 23 is discharged downward from the lower end of the cylindrical channel 23. Therefore, when at least one of the central rinsing liquid valve 27, the central gas valve 29, and the surrounding gas valve 31 is opened, at least one of the rinsing liquid and the gas is opened at the central portion of the lower surface 4x of the blocking plate 4. From below.

  The rinse liquid supplied to the central shaft nozzle 10 is pure water (deionized water), carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm). Or any other liquid. Further, the gas supplied to the central axis nozzle 10 and the cylindrical flow path 23 may be an inert gas such as nitrogen gas, clean air, or other gas. . Hereinafter, an example in which pure water, which is an example of a rinsing liquid, is supplied to the central axis nozzle 10 and nitrogen gas, which is an example of a gas, is supplied to the central axis nozzle 10 and the cylindrical flow path 23 will be described.

  The first scan nozzle 5 is connected to a first chemical liquid pipe 34 in which a first chemical liquid valve 33 is interposed. Similarly, the second scan nozzle 6 is connected to a second chemical liquid pipe 36 in which a second chemical liquid valve 35 is interposed, and the third scan nozzle 7 is a third chemical liquid valve 37 in which a third chemical liquid valve 37 is interposed. A chemical solution pipe 38 is connected. When the first chemical liquid valve 33 is opened, the chemical liquid supplied from the first chemical liquid pipe 34 to the first scan nozzle 5 is discharged downward from the first scan nozzle 5. The same applies to the second chemical liquid valve 35 and the third chemical liquid valve 37.

The chemical solution supplied to each of the scan nozzles 5 to 7 is sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide, organic acid (for example, citric acid, oxalic acid, etc.), organic alkali (for example, TMAH: A liquid containing at least one of tetramethylammonium hydroxide and the like), a surfactant, and a corrosion inhibitor, or a liquid other than this. For example, SPM (mixed solution containing H ₂ SO ₄ and H ₂ O ₂ ), SC1 (mixed solution containing NH ₄ OH and H ₂ O ₂ ), SC2 (mixed solution containing HCl and H ₂ O ₂ ). ), FPM (mixed solution containing HF and H ₂ O ₂ ), and BHF (mixed solution containing HF and NH ₄ F) may be used as the chemical solution. Further, the chemical solutions supplied to the scan nozzles 5 to 7 may be the same type of chemical solution or different types of chemical solutions. Hereinafter, an example in which SPM is supplied to the first scan nozzle 5, hydrogen peroxide solution is supplied to the second scan nozzle 6, and SC1 is supplied to the third scan nozzle 7 will be described.

  The first scan nozzle 5 and the second scan nozzle 6 are held by a common nozzle arm 39. The third scan nozzle 7 is held by a nozzle arm 40 different from the nozzle arm 39. The nozzle arm 39 is connected to the first and second nozzle moving unit 41, and the nozzle arm 40 is connected to the third nozzle moving unit 42. The first & second nozzle moving unit 41 moves the nozzle arm 39 together with the first scan nozzle 5 and the second scan nozzle 6. The third nozzle moving unit 42 moves the nozzle arm 40 together with the third scan nozzle 7.

  The first & second nozzle moving unit 41 and the third nozzle moving unit 42 are discharged from the center position where the processing liquid discharged from the scan nozzles 5 to 7 is deposited on the center of the upper surface of the substrate W and from the scan nozzles 5 to 7. The scan nozzles 5 to 7 are moved between the peripheral positions where the processing liquid is deposited on the peripheral edge of the upper surface of the substrate W. For example, in a state where the first scan nozzle 5 is discharging the processing liquid and the substrate W is rotating, the first & second nozzle moving unit 41 moves the first scan nozzle 5 from one of the center position and the peripheral position to the other. When moved, the position where the processing liquid is deposited scans the entire upper surface of the substrate W, and the processing liquid is supplied to the entire upper surface of the substrate W.

  The fixed nozzle 8 is connected to a rinse liquid pipe 44 in which a rinse liquid valve 43 is interposed. When the rinse liquid valve 43 is opened, the rinse liquid supplied from the rinse liquid pipe 44 to the fixed nozzle 8 is discharged downward from the fixed nozzle 8. The fixed nozzle 8 discharges the rinsing liquid while being fixed at a predetermined position. The discharge position (position shown in FIG. 1) at which the fixed nozzle 8 discharges the rinsing liquid is set so that the rinsing liquid discharged from the fixed nozzle 8 reaches the center of the upper surface of the substrate W. When the rinsing liquid is discharged from the fixed nozzle 8 while the substrate W is rotating, the rinsing liquid that has landed on the center of the upper surface of the substrate W spreads outward due to the centrifugal force generated by the rotation of the substrate W. Thereby, the rinsing liquid is supplied to the entire upper surface of the substrate W. Below, the example in which the carbonated water which is an example of the rinse liquid is supplied to the fixed nozzle 8 is demonstrated.

  The two-fluid nozzle 9 is connected to a liquid pipe 46 provided with a liquid valve 45 and a gas pipe 48 provided with a gas valve 47. When the liquid valve 45 is opened, a liquid such as a rinsing liquid is supplied from the liquid pipe 46 to the two-fluid nozzle 9, and when the gas valve 47 is opened, gas is supplied to the two-fluid nozzle 9. In a state where both the liquid valve 45 and the gas valve 47 are opened, the liquid and the gas are mixed, and a jet formed by a large number of droplets is jetted downward from the two-fluid nozzle 9. Hereinafter, an example in which pure water, which is an example of a rinsing liquid, and nitrogen gas, which is an example of a gas, is supplied to the two-fluid nozzle 9 will be described.

  The two-fluid nozzle 9 is connected to a two-fluid nozzle moving unit 49. The two-fluid nozzle moving unit 49 includes a central position where the droplet ejected from the two-fluid nozzle 9 collides with the center of the upper surface of the substrate W, and a droplet ejected from the two-fluid nozzle 9 on the upper peripheral edge of the substrate W. The two-fluid nozzle 9 is moved between the colliding peripheral positions. When the two-fluid nozzle 9 is ejecting droplets and the two-fluid nozzle moving unit 49 moves the two-fluid nozzle 9 from one of the center position and the peripheral position to the other while the substrate W is rotating, The collision position of the droplet scans the entire upper surface of the substrate W, and a large number of droplets collide with the entire upper surface of the substrate W.

  The cup 11 is disposed outside the substrate W held by the spin chuck 3 (in a direction away from the reference line A1). The cup 11 includes a cylindrical member 50 surrounding the spin chuck 3, and a plurality of processing liquid cups 51 to 53 (first to third processing liquid cups 51 to 53) disposed between the spin chuck 3 and the cylindrical member 50. , A plurality of guards 54 to 57 (first to fourth guards 54 to 57) that receive the processing liquid scattered around the substrate W, and a guard lifting unit 58 that lifts and lowers the individual guards 54 to 57 independently. . FIG. 1 shows a state in which the third guard 56 is arranged at different heights on the right side and the left side of the reference line A1.

  Each of the treatment liquid cups 51 to 53 has a cylindrical shape, and surrounds the spin chuck 3 between the spin chuck 3 and the cylindrical member 50. The second processing liquid cup 52 second from the inside is disposed outside the first processing liquid cup 51, and the third processing liquid cup 53 is disposed outside the second processing liquid cup 52. ing. For example, the third processing liquid cup 53 is integrated with the second guard 55 and moves up and down together with the second guard 55. Each of the treatment liquid cups 51 to 53 forms an annular groove that opens upward. The processing liquid guided to the processing liquid cups 51 to 53 is sent to a recovery unit or a waste liquid unit (not shown) through this groove. As a result, the processing liquid discharged from the substrate W is collected or discarded.

  Each of the guards 54 to 57 has a cylindrical shape and surrounds the spin chuck 3 between the spin chuck 3 and the cylindrical member 50. The inner three guards 54 to 56 are inner guards surrounded by at least one of the outer three guards 55 to 57, and the outer three guards 55 to 57 are the inner three guards 54 to 57. An outer guard surrounding at least one of 56.

  Each of the guards 54 to 57 includes a cylindrical inclined portion 59 that extends obliquely upward toward the reference line A <b> 1 and a cylindrical guide portion 60 that extends downward from the lower end of the inclined portion 59. The upper end portion of each inclined portion 59 constitutes the inner peripheral portion of the guards 54 to 57 and has a larger diameter than the substrate W and the spin base 17. The four inclined portions 59 are stacked one above the other, and the four guide portions 60 are arranged coaxially. The three guide portions 60 excluding the outermost guide portion 60 can enter and exit the plurality of treatment liquid cups 51 to 53, respectively. That is, the cup 11 is foldable, and the cup 11 is unfolded and folded by the guard lifting / lowering unit 58 raising and lowering at least one of the four guards 54 to 57.

  The guard lifting / lowering unit 58 moves the guards 54 to 57 up and down between an upper position where the upper end of the guard is positioned above the substrate W and a lower position where the upper end of the guard is positioned below the substrate W. The guard lifting / lowering unit 58 can hold the guards 54 to 57 at an arbitrary position between the upper position and the lower position. The supply of the processing liquid to the substrate W and the drying of the substrate W are performed in a state where any one of the guards 54 to 57 faces the peripheral end surface of the substrate W. For example, when the third guard 56 third from the inside is opposed to the peripheral end surface of the substrate W, the first guard 54 and the second guard 55 are disposed at the lower position (position shown on the left side in FIG. 1), and the third The guard 56 and the fourth guard 57 are arranged at the upper position (position shown on the left side in FIG. 1). When the outermost fourth guard 57 is opposed to the peripheral end surface of the substrate W, the fourth guard 57 is disposed at the upper position (position shown on the right side in FIG. 1), and the other three guards 54 to 56 are disposed. Is arranged at the lower position (position shown on the right side of FIG. 1).

  The processing liquid is supplied to the substrate W, for example, in a state where any of the four guards 54 to 57 faces the peripheral end surface of the substrate W. Therefore, any of the processing liquids scattered around the substrate W when the processing liquid is supplied to the substrate W is caused by any of the first guard 54, the second guard 55, and the third guard 56. Guided to cups 51-53. Also, the substrate W is dried, for example, in a state where the outermost fourth guard 57 faces the peripheral end surface of the substrate W. Therefore, the processing liquid scattered around the substrate W due to the high-speed rotation of the substrate W is guided to the bottom of the cylindrical member 50 by the fourth guard 57 and sent from the bottom of the cylindrical member 50 to a waste liquid unit (not shown). In this way, the processing liquid scattered around the substrate W is received by any of the guards 54 to 57. For this reason, the scattering range of the processing liquid in the processing chamber 2 is narrowed.

  FIG. 2 is a schematic partial cross-sectional view of a part of the spin chuck 3 and the guards 54 to 57 as viewed from the horizontal direction. FIG. 3 is a plan view of the spin chuck 3 and the cup 11. In FIG. 2, illustration of guards other than the first guard 53 and the second guard 55 is omitted. Moreover, the black arrow of FIG. 3 has shown the suction direction of the gas by the suction opening 59a. In FIG. 3, the suction port 59a is schematically shown for easy understanding.

  As shown in FIG. 3, the upper ends of the guards 54 to 57 (the upper ends of the inclined portions 59) are coaxial with the substrate W and include a cylindrical inner peripheral surface 59 x having a larger diameter than the substrate W. A plurality of suction ports 59a are formed in the inner peripheral surface 59x. Each suction port 59a may be a circular or elliptical hole, or may be a long hole that is long in the circumferential direction. The plurality of suction ports 59a are arranged at equal intervals in the circumferential direction of the guards 54-57. As shown in FIG. 2, the plurality of suction ports 59 a formed in the common guards 54 to 57 are connected to a suction path 63 formed inside the guards 54 to 57. The suction paths 63 of the guards 54 to 57 are connected to the suction device 64 via a suction pipe 66 in which a suction valve 65 is interposed. Therefore, when the suction valve 65 is opened, gas is supplied to all the suction ports 59a formed in all the guards 54 to 57. The suction direction of the gas to each suction port 59a may be a horizontal direction or a direction inclined upward or downward with respect to a horizontal plane.

  As shown in FIG. 2, in the state in which two vertically adjacent guards (for example, the first guard 53 and the second guard 55) are disposed at the lower position and the upper position, respectively, the liquid splashed around the substrate W Drops are ejected between the two guards. When the control device 12 opens the suction valve 65 in this state, the gas on the substrate W is sucked obliquely upward toward the plurality of suction ports 59a formed in the upper guards 54 to 57 (one point in FIG. 2). (See dashed arrow). At the same time, the gas on the substrate W is sucked diagonally downward toward the plurality of suction ports 59a formed in the guards 54 to 57 at the lower position (see the two-dot chain line arrows in FIG. 2). Therefore, as shown in FIG. 3, an airflow that spreads radially from the reference line A <b> 1 is formed on the substrate W. Thereby, the gas on the substrate W is discharged into the guards 54 to 57.

FIG. 4 is a schematic diagram for explaining an example of the processing of the substrate W performed by the substrate processing apparatus 1. In the following, reference is made to FIG. 1, FIG. 2 and FIG.
When the substrate W is processed, a loading step (S1) for loading the substrate W into the processing chamber 2 is performed. Specifically, the control device 12 positions the scan nozzles 5 to 7 and the two-fluid nozzle 9 at the retracted position (a position away from above the substrate W). Furthermore, the control device 12 positions the blocking plate 4 in the retracted position, and positions all the guards 54 to 57 in the lower position. In this state, the control device 12 loads the substrate W into the processing chamber 2 by the transfer robot R shown in FIG. Thereafter, the control device 12 places the substrate W on the spin chuck 3 by the transfer robot R. Then, the control device 12 holds the substrate W by the spin chuck 3. After the substrate W is placed on the spin chuck 3, the control device 12 retracts the transfer robot R from the processing chamber 2 and closes the shutter 13.

  Next, the 1st chemical | medical solution process process (S2) which supplies SPM which is an example of a chemical | medical solution to the board | substrate W is performed. Specifically, the control device 12 moves the first scan nozzle 5 and the second scan nozzle 6 from the retracted position onto the substrate W by the first & second nozzle moving unit 41. Then, the control device 12 raises at least one of the guards 54 to 57 by the guard lifting / lowering unit 58 so that any one of the guards 54 to 57 faces the peripheral end surface of the substrate W. Subsequently, the control device 12 rotates the substrate W and the shielding plate 4 in the same rotational direction at the same or substantially the same rotational speed by the spin chuck 3 and the shielding plate rotating unit 21. Further, the control device 12 lowers the blocking plate 4 from the retracted position to the upper intermediate position by the blocking plate lifting / lowering unit 22. As described above, the upper intermediate position is set to a height at which the scan nozzles 5 to 7 and the two-fluid nozzle 9 can enter between the substrate W and the blocking plate 4. Therefore, even if the control device 12 lowers the blocking plate 4 to the upper intermediate position, the blocking plate 4 does not collide with the first scan nozzle 5 and the second scan nozzle 6 on the substrate W.

  The control device 12 opens the suction valve 65 after moving the blocking plate 4. Thereby, the gas between the board | substrate W and the shielding board 4 is attracted | sucked by all the suction openings 59a formed in all the guards 54-57, and the airflow which spreads radially is between the board | substrate W and the shielding board 4. FIG. Formed. The control device 12 opens the first chemical valve 33 in a state where the gas is sucked into the guards 54 to 57, and discharges SPM from the first scan nozzle 5 toward the upper surface of the rotating substrate W. Further, the control device 12 moves the first scan nozzle 5 between the center position and the peripheral position while discharging SPM from the first scan nozzle 5. When a predetermined time elapses after the first chemical liquid valve 33 is opened, the control device 12 puts the first scan nozzle 5 and the second scan nozzle 6 on the substrate W into the guards 54 to 57. The first chemical liquid valve 33 is closed while continuing the suction of the gas, and the discharge of the SPM from the first scan nozzle 5 is stopped.

  The SPM discharged from the first scan nozzle 5 lands on the upper surface of the substrate W, and then spreads outward due to the centrifugal force generated by the rotation of the substrate W. As a result, SPM is supplied to the entire upper surface of the substrate W. Furthermore, since the SPM landing position on the substrate W moves as the first scan nozzle 5 moves, the SPM is supplied uniformly over the entire upper surface of the substrate W. Thereby, the entire upper surface of the substrate W is uniformly processed by SPM. Furthermore, in parallel with the discharge of SPM, gas is sucked into the guards 54 to 57, so the chemical atmosphere (contaminated atmosphere containing SPM mist and fume) generated with the supply of SPM to the substrate W is It is sucked into the guards 54 to 57 and discharged from the processing chamber 2. Thereby, it is suppressed or prevented that the board | substrate W and the shielding board 4 are contaminated with chemical | medical solution atmosphere. Furthermore, it can suppress or prevent that the chemical | medical solution atmosphere leaks from between the board | substrate W and the shielding board 4, and the inner wall face of the process chamber 2 is contaminated.

  Next, a second chemical treatment process (S3) is performed in which hydrogen peroxide water, which is an example of a chemical, is supplied to the substrate W. Specifically, the control device 12 sets the second chemical valve 35 in a state where the blocking plate 4 is located at the upper intermediate position and any of the guards 54 to 57 faces the peripheral end surface of the substrate W. Open and discharge the hydrogen peroxide solution from the second scan nozzle 6 toward the upper surface of the rotating substrate W. Further, the control device 12 moves the second scan nozzle 6 between the center position and the peripheral position while discharging the hydrogen peroxide solution from the second scan nozzle 6. When a predetermined time elapses after the second chemical liquid valve 35 is opened, the control device 12 closes the second chemical liquid valve 35 while continuing the suction of the gas into the guards 54 to 57, and the second scan nozzle. The discharge of the hydrogen peroxide solution from 6 is stopped. Thereafter, the controller 12 causes the first & second nozzle moving unit 41 to retract the first scan nozzle 5 and the second scan nozzle 6 from the substrate W.

  Similar to SPM, the hydrogen peroxide solution discharged from the second scan nozzle 6 lands on the upper surface of the substrate W, and then spreads outward due to the centrifugal force generated by the rotation of the substrate W. Therefore, the SPM on the substrate W is replaced with the hydrogen peroxide solution discharged from the second scan nozzle 6. Thereby, the hydrogen peroxide solution is supplied to the entire upper surface of the substrate W, and the entire upper surface of the substrate W is uniformly treated with the hydrogen peroxide solution. Furthermore, since the gas is sucked into the guards 54 to 57 in parallel with the discharge of the hydrogen peroxide solution, even if the chemical atmosphere remains between the substrate W and the shielding plate 4, this atmosphere is Sucked into the guards 54-57. Thereby, it can suppress or prevent that the board | substrate W and the shielding board 4 are contaminated, or chemical | medical solution atmosphere leaks out between the board | substrate W and the shielding board 4. FIG.

  Next, the rinse process (S4) which supplies the carbonated water which is an example of the rinse liquid to the board | substrate W is performed. Specifically, the control device 12 opens the rinse liquid valve 43 in a state where the blocking plate 4 is located at the upper middle position and any of the guards 54 to 57 faces the peripheral end surface of the substrate W. Then, carbonated water is discharged from the fixed nozzle 8 toward the center of the upper surface of the substrate W in the rotating state. When a predetermined time elapses after the rinse liquid valve 43 is opened, the control device 12 closes the rinse liquid valve 43 and stops the discharge of carbonated water from the fixed nozzle 8. Thereafter, the control device 12 closes the suction valve 65 and stops the suction of gas into the guards 54 to 57.

  The carbonated water discharged from the fixed nozzle 8 lands on the center of the upper surface of the substrate W, and then spreads outward due to the centrifugal force generated by the rotation of the substrate W. Therefore, the hydrogen peroxide solution on the substrate W is replaced with carbonated water discharged from the fixed nozzle 8. Thereby, carbonated water is supplied to the entire upper surface of the substrate W, and the hydrogen peroxide solution on the substrate W is washed away by the carbonated water. Furthermore, since the gas is sucked into the guards 54 to 57 in parallel with the discharge of the carbonated water, even if the chemical solution atmosphere remains between the substrate W and the shielding plate 4, this atmosphere is ~ 57. Thereby, it can suppress or prevent that the board | substrate W and the shielding board 4 are contaminated, or chemical | medical solution atmosphere leaks out between the board | substrate W and the shielding board 4. FIG.

  Next, a third chemical treatment process (S5) for supplying SC1 as an example of the chemical to the substrate W is performed. Specifically, the control device 12 includes the third nozzle moving unit 42 in a state where the blocking plate 4 is positioned at the upper intermediate position and any of the guards 54 to 57 faces the peripheral end surface of the substrate W. Thus, the third scan nozzle 7 is moved from the retracted position onto the substrate W. Thereafter, the control device 12 opens the third chemical liquid valve 37 and discharges SC1 from the third scan nozzle 7 toward the upper surface of the rotating substrate W. Further, the control device 12 moves the third scan nozzle 7 between the center position and the peripheral position while discharging SC1 from the third scan nozzle 7. Thereby, the carbonated water on the substrate W is replaced with SC1. When a predetermined time elapses after the third chemical liquid valve 37 is opened, the control device 12 closes the third chemical liquid valve 37 and stops the discharge of SC1 from the third scan nozzle 7. Thereafter, the control device 12 retracts the third scan nozzle 7 from the substrate W by the third nozzle moving unit 42.

  Next, a droplet collision step (S6) in which a droplet of pure water (DIW), which is an example of a rinsing liquid, collides with the substrate W is performed. Specifically, the control device 12 includes the two-fluid nozzle moving unit 49 in a state where the blocking plate 4 is positioned at the upper middle position and any of the guards 54 to 57 faces the peripheral end surface of the substrate W. Thus, the two-fluid nozzle 9 is moved from the retracted position onto the substrate W. Thereafter, the control device 12 opens the liquid valve 45 and the gas valve 47. Thereby, pure water and nitrogen gas are supplied to the two-fluid nozzle 9, and a large number of droplets are ejected from the two-fluid nozzle 9 toward the upper surface of the rotating substrate W. The controller 12 moves the two-fluid nozzle 9 between the center position and the peripheral position while ejecting a large number of droplets from the two-fluid nozzle 9. As a result, the pure water droplet collides with the entire upper surface of the substrate W, and the bonding force between the substrate W and the foreign matter is weakened by the kinetic energy of the droplet. Further, pure water is supplied to the entire upper surface of the substrate W, and SC1 on the substrate W is replaced with pure water. When a predetermined time elapses after the liquid valve 45 and the gas valve 47 are opened, the control device 12 closes the liquid valve 45 and the gas valve 47 and stops the discharge of pure water from the two-fluid nozzle 9. Thereafter, the control device 12 retracts the two-fluid nozzle 9 from the substrate W by the two-fluid nozzle moving unit 49.

  Next, a final rinsing step (S7) for supplying carbonated water, which is an example of a rinsing liquid, to the substrate W is performed. Specifically, in the control device 12, the scan nozzles 5 to 7 and the two-fluid nozzle 9 are retracted from the substrate W, and any of the guards 54 to 57 faces the peripheral end surface of the substrate W. Then, the blocking plate 4 is lowered from the upper intermediate position to the lower intermediate position by the blocking plate lifting / lowering unit 22. Thereafter, the control device 12 opens the central rinse liquid valve 27 and discharges carbonated water from the central axis nozzle 10 toward the center of the upper surface of the rotating substrate W. The carbonated water discharged from the central axis nozzle 10 lands on the center of the upper surface of the substrate W and then spreads outward by the centrifugal force generated by the rotation of the substrate W. As a result, the pure water on the substrate W is replaced with carbonated water, and the foreign matter peeled off from the substrate W by the collision of the droplets is washed away. When a predetermined time elapses after the central rinse liquid valve 27 is opened, the control device 12 closes the central rinse liquid valve 27 and stops discharging carbonated water from the central shaft nozzle 10.

  Next, a drying step (S8) for drying the substrate W is performed. Specifically, the control device 12 lowers the blocking plate 4 from the lower intermediate position to the close position by the blocking plate lifting / lowering unit 22 with any of the guards 54 to 57 facing the peripheral end surface of the substrate W. Let Further, the control device 12 opens at least one of the central gas valve 29 and the surrounding gas valve 31 and discharges nitrogen gas downward from the central opening 4b opened at the center of the lower surface 4x of the blocking plate 4. Thereafter, the control device 12 accelerates the rotation of the substrate W and the shielding plate 4 by the spin chuck 3 and the shielding plate rotating unit 21, and rotates the substrate W and the shielding plate 4 at a high rotational speed. When a predetermined time elapses after the substrate W and the shielding plate 4 are started to rotate at high speed, the control device 12 stops the discharge of nitrogen gas from the shielding plate 4 and rotates the substrate W and the shielding plate 4. Stop.

  When the shielding plate 4 moves to the proximity position, the interval between the substrate W and the shielding plate 4 is narrowed, and the lower surface 4x of the shielding plate 4 is brought closer to the upper surface of the substrate W. Therefore, the volume between the substrate W and the blocking plate 4 is reduced. Further, the nitrogen gas discharged from the central opening 4 b flows outward between the substrate W and the shielding plate 4, and then is discharged outward from the gap between the substrate W and the shielding plate 4. Therefore, the atmosphere of the substrate W and the blocking plate 4 is replaced with nitrogen gas. The carbonated water on the substrate W is spun off around the substrate W by the high-speed rotation of the substrate W. Therefore, the carbonated water on the substrate W is removed from the substrate W in a nitrogen gas atmosphere. Therefore, the substrate W is dried in a nitrogen gas atmosphere. Thereby, generation | occurrence | production of a watermark is reduced.

  Next, an unloading step (S9) for unloading the substrate W from the processing chamber 2 is performed. Specifically, the control device 12 raises the blocking plate 4 from the close position to the retracted position by the blocking plate lifting / lowering unit 22. Furthermore, the control device 12 lowers all the guards 54 to 57 to the lower position by the guard lifting / lowering unit 58. In this state, the control device 12 causes the transfer robot R to enter the processing chamber 2. Thereafter, the control device 12 holds the substrate W on the spin chuck 3 by the transfer robot R. Then, the control device 12 retracts the transfer robot R from the processing chamber 2. Thereby, the substrate W is carried out from the processing chamber 2.

  As described above, in this embodiment, the gas on the substrate W held horizontally by the spin chuck 3 is formed with a plurality of suction ports formed on the inner peripheral surface 59x of the cylindrical guards 54 to 57 surrounding the spin chuck 3. 59a is aspirated. The plurality of suction ports 59a are arranged in the circumferential direction of the guards 54-57. Therefore, a radially expanding air current, that is, an air current extending outward from the center of the substrate W is formed on the substrate W, and the gas on the substrate W is directly sucked into the plurality of suction ports 59a. Therefore, even if a contaminated atmosphere that contaminates the substrate W is generated on the substrate W by supplying the processing liquid to the substrate W, this atmosphere is surely discharged from the substrate W. Therefore, diffusion of the contaminated atmosphere can be suppressed or prevented, and contamination of the substrate W due to contact with the contaminated atmosphere can be reduced. Thereby, the cleanliness of the substrate W can be increased.

Although the description of the embodiment of the present invention has been described above, the present invention is not limited to the contents of the above-described embodiment, and various modifications can be made within the scope of the claims.
For example, in the above-described embodiment, the case where the suction ports are formed in all the guards has been described, but the suction ports may be formed only in some of the guards.
Further, in the above-described embodiment, the cup is provided with a plurality of guards, but the number of guards may be one.

In the above-described embodiment, the case where the chemical atmosphere generated along with the supply of the SPM is discharged through the suction port has been described. However, the discharged chemical atmosphere is generated along with the supply of the chemical other than the SPM. It may be a chemical atmosphere. Naturally, the atmosphere generated with the supply of the treatment liquid other than the chemical liquid may be discharged through the suction port.
In the above-described embodiment, the case where SC1 is supplied to the substrate in a state where the guard stops sucking the gas has been described. However, the guard may suck the gas in parallel with the supply of SC1. Good. For example, the gas suction may be continued until the substrate is carried into the processing chamber and then carried out.

  In the above-described embodiment, the guard starts sucking the gas before the SPM supply to the substrate is started, and the guard finishes the gas suction after the SPM supply to the substrate is finished. Explained. However, the guard may start the gas suction at the same time as or after the SPM supply to the substrate is started. In addition, the guard may end the gas suction at the same time as or before the supply of the SPM to the substrate ends.

In the above-described embodiment, the case where the chemical liquid is discharged from the scan nozzle and the rinse liquid is discharged from the fixed nozzle and the central axis nozzle has been described. However, the rinse liquid may be discharged from the scan nozzle, and the chemical liquid may be discharged from the fixed nozzle and the central axis nozzle.
In the above-described embodiment, the case where the substrate processing apparatus is an apparatus that processes a disk-shaped substrate has been described. However, the substrate processing apparatus is an apparatus that processes a polygonal substrate such as a substrate for a liquid crystal display device. It may be.

  In addition, various design changes can be made within the scope of matters described in the claims.

1: Substrate processing apparatus 3: Spin chuck (substrate holding means)
4: Blocking plate (opposing member)
4b: Center opening 4x: Lower surface (opposing surface)
5: First scan nozzle (processing liquid supply means)
6: Second scan nozzle (processing liquid supply means)
7: Third scan nozzle (processing liquid supply means)
8: Fixed nozzle (treatment liquid supply means)
9: Two-fluid nozzle (treatment liquid supply means)
10: Center axis nozzle (treatment liquid supply means)
54: First guard (inner guard)
55: Second guard (inner guard, outer guard)
56: Third guard (inner guard, outer guard)
57: Fourth guard (outer guard)
59: Inclined portion 59a: Suction port 59x: Inner peripheral surface 64: Suction device W: Substrate

Claims (8)

Substrate holding means for holding the substrate horizontally;
Treatment liquid supply means for supplying a treatment liquid to the upper surface of the substrate held by the substrate holding means;
A plurality of suction ports arranged in the circumferential direction, including a cylindrical outer guard that surrounds the substrate holding means, and a cylindrical inner guard that surrounds the substrate holding means between the substrate holding means and the outer guard the gas is aspirated, seen including a cylindrical guard which forms an air current that radiates on the substrate,
The outer guard includes a cylindrical upper end portion disposed above the substrate, and the plurality of suction ports are formed on an inner peripheral surface of the upper end portion of the outer guard,
The inner guard includes a cylindrical upper end disposed below the substrate, and the plurality of suction ports are formed on an inner peripheral surface of the upper end of the inner guard .   The substrate processing apparatus according to claim 1, wherein the plurality of suction ports are arranged at equal intervals in the circumferential direction of the guard.   The guard starts the suction of the gas to the plurality of suction ports before the supply of the processing liquid from the processing liquid supply unit to the substrate is started, and the supply of the processing liquid from the processing liquid supply unit to the substrate The substrate processing apparatus according to claim 1, wherein a gas is sucked into the plurality of suction ports in parallel with the first and second suction ports.   The substrate processing apparatus according to claim 3, wherein the guard finishes the suction of the gas to the plurality of suction ports after the supply of the treatment liquid from the treatment liquid supply unit to the substrate is finished. Wherein the plurality of connected to the respective suction ports were further comprising a suction device, a substrate processing apparatus according to any one of claims 1-4. A counter member including a counter surface facing the entire upper surface of the substrate held by the substrate holding means;
The said guard is a substrate processing apparatus as described in any one of Claims 1-5 which attracts | sucks the gas between the said board | substrate and the said opposing member to these suction ports. The substrate processing according to claim 6 , wherein the facing member has an opening at a position in the facing surface that faces the central portion of the substrate, and further includes a central opening that discharges gas toward the upper surface of the substrate. apparatus. A substrate processing method executed by the substrate processing apparatus according to claim 1,
A holding step of holding the substrate horizontally by the substrate holding means,
In parallel with the holding step, a processing liquid supply step of supplying a processing liquid to the upper surface of the substrate by the processing liquid supply means ,
In parallel with the holding step, the plurality of gas by sucking the suction port, and a suction step of the airflow extending radially is formed on the substrate, the substrate processing method.

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