JP4223293B2 - Substrate processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention provides a processing liquid on a substrate while rotating a substrate holding means for holding a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter simply referred to as “substrate”). The present invention relates to a substrate processing apparatus that collects a processing liquid scattered by rotation when a predetermined substrate processing such as a cleaning process is performed by supplying a guide, and particularly relates to improvement of a processing liquid recovery means.
[0002]
[Prior art]
Conventionally, while a substrate is placed on a spin base and rotated, a chemical solution or rinse pure water (in this specification, the chemical solution and pure water are collectively referred to as a “treatment solution” on the front surface and / or back surface of the substrate. ) Is used to perform etching and cleaning processes. In such a substrate processing apparatus, a method has been proposed in which a plurality of processing liquids used in each substrate processing are received and separated and recovered by cup units corresponding to the plurality of processing liquids (for example, patents). References 1, 2).
[0003]
There has also been proposed a method in which the atmosphere near the substrate received by the cup unit and the processing liquid are separated from the liquid outside the cup (for example, Patent Document 3).
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 11-251287
[Patent Document 2]
JP 05-190442 A
[Patent Document 3]
Japanese Patent Laid-Open No. 08-097134
[0005]
[Problems to be solved by the invention]
However, in the spin etch apparatus shown in Patent Document 1 and the chemical processing apparatus shown in Patent Document 2, the processing liquid is recovered in a cup unit disposed near the substrate and the processing liquid is externally supplied from one place of the cup unit. Are discharged. Thereby, the process liquid collect | recovered with the cup unit cannot be discharged | emitted rapidly outside. For this reason, the processing liquid remaining in the cup unit adversely affects the substrate processing and causes a substrate defect.
[0006]
On the other hand, in the coating apparatus shown in Patent Document 3, the exhaust liquid connected to the tank is operated to exhaust the atmosphere in the tank, so that the processing liquid collected in the cup unit connected to the tank flows into the tank. Can be made. Therefore, the processing liquid can be quickly discharged from the cup unit near the substrate.
[0007]
Here, considering the case where the tank of the coating apparatus shown in Patent Document 3 is applied to an apparatus that separates and recovers a processing liquid using a plurality of cup units shown in Patent Document 1 or Patent Document 2, one tank is provided. Just placing it requires a lot of space. Therefore, if a plurality of tanks are arranged to collect a plurality of processing liquids by a plurality of cup units, the floor area of the substrate processing apparatus increases and space saving cannot be achieved.
[0008]
Therefore, in the present invention, a substrate processing apparatus capable of quickly discharging a processing liquid from a recovery unit provided in the vicinity of the substrate when the processing unit that is scattered by rotating the substrate is received by the guide unit and recovered. The first purpose is to provide it.
[0009]
A second object is to save space while suppressing an increase in the floor area of the substrate processing apparatus even when a plurality of collection units are provided.
[0010]
[Means for Solving the Problems]
  In order to solve the above-mentioned problems, a first aspect of the present invention provides a substrate processing apparatus for performing substrate processing by supplying a predetermined processing liquid to a substrate, while maintaining the substrate in a substantially horizontal position, while maintaining the substrate in a substantially horizontal plane. A rotation holding means for rotating the rotation holding means, and a first treatment liquid collection means for collecting the treatment liquid scattered from the substrate by rotating the rotation holding means, wherein the first treatment liquid collection means A recovery unit provided on a side of the rotation holding means and having a first recovery tank for recovering the processing liquid scattered from the substrate by rotation; and spaced apart below the first recovery tank; A storage tank having an inner space shape substantially the same as the inner space shape of the first recovery tank, and a plurality of pipes communicating the bottom of the first recovery tank and the interior of the storage tank at a plurality of locations. A storage section havingThere are a plurality of first processing liquid recovery means, and the storage tanks included in each of the plurality of first processing liquid recovery means are stacked in a substantially vertical direction.It is characterized by that.
  According to a second aspect of the present invention, in the substrate processing apparatus of the first aspect, the second processing liquid recovery means for recovering the processing liquid scattered from the substrate by rotating the rotation holding means. Further, the second processing liquid recovery means is provided on a side of the rotation holding means, and is provided with a second recovery part for recovering the processing liquid scattered from the substrate by the rotation, and the second recovery part. And a discharge pipe for discharging the collected processing liquid to the outside and discarding it.
[0011]
  Also,Claim 3The invention of claim 1Or claim 2The substrate processing apparatus according to claim 1, wherein the storage unit further includes an exhaust path that communicates with the storage tank and exhausts the atmosphere in the storage tank.
[0012]
  Also,Claim 4The invention ofClaim 3The substrate processing apparatus according to claim 1, wherein the storage unit is further connected to the storage tank, and further includes a drainage mechanism that discharges the used processing liquid stored in the storage tank to the outside. To do.
[0013]
  Also,Claim 5The invention ofClaim 4In the substrate processing apparatus according to the item 1, the drainage mechanism includes a cleaning unit that cleans and reuses the used processing liquid.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0018]
<1. Configuration of substrate processing apparatus>
FIG. 1 is a longitudinal sectional view showing a configuration of a substrate processing apparatus 1 according to the present invention. FIG. 2 is an enlarged view showing a portion A (a range surrounded by an alternate long and short dash line) of the substrate processing apparatus 1 of FIG. FIG. 3 is a diagram illustrating an example of a supply unit that supplies a processing liquid and an inert gas to the substrate. FIG. 4 is a view showing a cross section near the drainage tank (collection tank) described later.
[0019]
In the substrate processing apparatus 1 according to the present embodiment, a processing operation such as bevel etching can be performed by supplying a chemical solution to the lower surface of the substrate W, which is a semiconductor wafer. In addition, in order to clarify those directional relationships, FIG. 1 and subsequent drawings are attached with an XYZ orthogonal coordinate system in which the Z-axis direction is a vertical direction and the XY plane is a horizontal plane, as necessary.
[0020]
The substrate processing apparatus 1 mainly faces a spin base 10 that holds a substrate W, a plurality of chuck pins 14 provided on the spin base 10, a rotation drive mechanism 20 that rotates the spin base 10, and the spin base 10. The atmosphere blocking plate 30 provided in this manner, the splash guard 50 surrounding the periphery of the substrate W held on the spin base 10, and the mechanism for supplying the processing liquid and the inert gas to the substrate W held on the spin base 10 And a mechanism for raising and lowering the atmosphere blocking plate 30 and the splash guard 50.
[0021]
The substrate W is held on the spin base 10 in a substantially horizontal posture. The spin base 10 is a disk-shaped member having an opening at the center, and a plurality of chuck pins 14 that hold the peripheral edge of the circular substrate W are provided upright on the upper surface thereof. Three or more chuck pins 14 may be provided in order to securely hold the circular substrate W. In the substrate processing apparatus of this embodiment, six chuck pins 14 are provided along the periphery of the spin base 10 or the like. It is set up at intervals (60 ° intervals). In FIG. 2, two chuck pins 14 are shown for convenience of illustration.
[0022]
Each of the six chuck pins 14 includes a substrate support portion 14a that supports the peripheral portion of the substrate W from below, and a substrate holding portion that holds the substrate W by pressing the outer peripheral end surface of the substrate W supported by the substrate support portion 14a. 14b. Each chuck pin 14 is configured to be switchable between a pressing state in which the substrate holding portion 14 b presses the outer peripheral end surface of the substrate W and an open state in which the substrate holding portion 14 b is separated from the outer peripheral end surface of the substrate W. Switching between the pressed state and the released state of the six chuck pins 14 can be realized by various known mechanisms, for example, a link mechanism disclosed in Japanese Patent Publication No. 3-9607 may be used. .
[0023]
When the substrate W is transferred to the spin base 10 and when the substrate W is received from the spin base 10, the six chuck pins 14 are opened. On the other hand, when various processes described later are performed on the substrate W, the six chuck pins 14 are pressed. By setting the pressed state, the six chuck pins 14 hold the peripheral edge of the substrate W and hold the substrate W in a horizontal posture at a predetermined interval from the spin base 10. The substrate W is held with its front surface facing the upper surface and the back surface facing the lower surface. When the substrate W is held with the six chuck pins 14 being pressed, the upper end of the substrate holding portion 14 b protrudes from the upper surface of the substrate W. This is to securely hold the substrate W so that the substrate W does not fall off the chuck pins 14 during processing.
[0024]
A rotation shaft 11 is suspended from the lower surface side of the center portion of the spin base 10. The rotating shaft 11 is a hollow cylindrical member, and a lower processing liquid nozzle 15 is inserted in a hollow portion inside thereof. In the vicinity of the lower end of the rotary shaft 11, a rotary drive mechanism 20 is linked and connected. The rotation drive mechanism 20 includes an electric motor and a torque transmission mechanism that transmits the rotation to the rotation shaft 11. The substrate W held on the rotation shaft 11, the spin base 10, and the chuck pin 14 is vertically aligned in a horizontal plane. It can be rotated about an axis J along the direction. As the rotation drive mechanism 20, a hollow motor in which the motor shaft is directly connected to the rotation shaft 11 may be employed.
[0025]
The lower processing liquid nozzle 15 passes through the rotary shaft 11, and the tip portion 15 a is located immediately below the center portion of the substrate W held by the chuck pins 14. Further, the base end portion of the lower processing liquid nozzle 15 is connected to the processing liquid pipe 16 in communication. As shown in FIG. 3, the base end portion of the processing liquid pipe 16 is branched into four, and the branch chemical pipe 16a is connected to the first chemical liquid supply source 17a in which the first chemical liquid is accommodated. A second chemical solution supply source 17b containing a second chemical solution is connected to 16b, a third chemical solution supply source 17c containing a third chemical solution is connected to the branch pipe 16c, and a branch pipe 16d is connected. A pure water supply source 18 in which pure water used as a rinsing liquid is accommodated is connected. The branch pipes 16a, 16b, 16c, and 16d are provided with valves 12a, 12b, 12c, and 12d, respectively. By switching between opening and closing of these valves 12a, 12b, 12c, and 12d, the first to third chemicals are provided near the center of the lower surface of the substrate W held by the chuck pin 14 from the tip 15a of the lower processing liquid nozzle 15. Alternatively, the rinsing liquid can be selectively switched and discharged and supplied.
[0026]
That is, the first chemical liquid can be supplied from the lower processing liquid nozzle 15 by opening the valve 12a and closing the other valves, and the lower side by opening the valve 12b and closing the other valves. The second chemical liquid can be supplied from the processing liquid nozzle 15, and the third chemical liquid can be supplied from the lower processing liquid nozzle 15 by opening the valve 12c and closing the other valves. The rinsing liquid can be supplied from the lower processing liquid nozzle 15 by opening 12d and closing the other valves. Examples of the first to third chemical solutions include hydrofluoric acid (HF), buffered hydrofluoric acid (BHF), SC1 (mixed solution of ammonia water, hydrogen peroxide solution, and water), and SC2 (hydrochloric acid and hydrogen peroxide). A mixed liquid of water and water) or the like can be used, and the types can be different from each other.
[0027]
Further, a gap between the inner wall of the hollow portion of the rotating shaft 11 and the outer wall of the lower processing liquid nozzle 15 is a gas supply path 19. The distal end portion 19 a of the gas supply path 19 is directed to the lower surface of the substrate W held by the chuck pins 14. And the base end part of the gas supply path 19 is connected to the gas supply mechanism which abbreviate | omits illustration. By this gas supply mechanism, an inert gas such as nitrogen gas can be supplied from the front end portion 19a of the gas supply path 19 toward the lower surface of the substrate W held by the chuck pins 14. As a gas supply mechanism, an inert gas supply source 23 described later can be employed as it is.
[0028]
The rotating shaft 11, the rotation drive mechanism 20, and the like are accommodated in a cylindrical casing 25 provided on the base member 24.
[0029]
As shown in FIG. 2, a receiving member 26 is fixedly attached around the casing 25 on the base member 24. As shown in FIGS. 2 and 4, cylindrical partition members 27 a, 27 b, 27 c and 27 d are erected as the receiving member 26.
[0030]
The first drainage tank 28a has a ring-shaped inner bottom, and is in a donut-shaped space surrounded by the inner bottom, the outer wall of the cylindrical casing 25, and the inner wall of the cylindrical partition member 27a. The rinsing liquid received by the guide 51f is used as a collection tank for temporarily storing the rinsing liquid.
[0031]
Similarly to the first drainage tank 28a, the second drainage tank 28b has a ring shape at the inner bottom, the inner bottom, the outer wall of the cylindrical partition member 27a, and the cylindrical partition member 27b. It is used as a recovery tank that temporarily stores the used chemical solution received by the recovery port 52f in a donut-shaped space surrounded by the inner wall.
[0032]
Similarly, the third drainage tank 28c has a ring-shaped inner bottom, and is surrounded by the inner bottom, the outer wall of the cylindrical partition member 27b, and the inner wall of the cylindrical partition member 27c. Is used as a collection tank for temporarily storing the used chemical solution received by the collection port 53d in the shaped space. Similarly, the fourth drainage tank 28d, like the other drainage tanks 28a to 28c, has an inner bottom portion having a ring shape, the inner bottom portion, the outer wall of the cylindrical partition member 27c, and a cylinder. It is used as a recovery tank that temporarily stores the used chemical solution received by the recovery port 54c in a space above the donut surrounded by the inner wall of the partition member 27d.
[0033]
And the guide part 51f, the flow path 51g, the 1st drainage tank 28a, the collection | recovery port (guide part) 52f, the flow path 52g, the 2nd drainage tank 28b, the collection | recovery port (guide part) 53d, the flow path 53e, and the 3rd Each combination of the drainage tank 28c, the collection port (guide part) 54c, the flow path 54d, and the fourth drainage tank 28d is configured as a collection unit that collects the processing liquid.
[0034]
As shown in FIG. 2, a plurality of rinse liquid discharge ports 94 communicating with the upper end of the rinse liquid discharge pipe 84 are provided at the bottom of the first drain tank 28a (four in this embodiment: see FIG. 4). It has been. The rinse liquid discharge pipe 84 is provided so as to penetrate through a plate-like member 64 of the storage unit 60 described later, the bottom of the third ring 63, the bottom of the second ring 62, and the bottom of the first ring 61. The other end communicates with a drainage drain 88 outside the substrate processing apparatus 1 via a pipe 87. Therefore, the rinse liquid temporarily stored in the first drain tank 28 a quickly falls from the four rinse liquid discharge ports 94 toward the rinse liquid discharge pipe 84, and enters the drain drain 88 via the pipe 87. Discharged. That is, the rinse liquid received and collected by the guide 51f is quickly discharged from the first drain tank 28a disposed near the spin base 10 where the substrate W is held toward the outside of the substrate processing apparatus 1. .
[0035]
In the present embodiment, as shown in FIG. 4, four rinse liquid discharge ports 94 are provided at equal intervals (90 ° intervals) along the bottom of the first doughnut-shaped drainage tank 28a. However, the present invention is not limited to this, and the number of outlets is not limited to this as long as the rinse liquid can be quickly discharged from the first drain tank 28a.
[0036]
Further, at the bottom of the fourth drainage tank 28d, as shown in FIG. 2, there are a plurality of first discharge ports 91 (three in the present embodiment: FIG. 4) communicating with the upper end of the first chemical liquid recovery pipe 81. See) provided. The first chemical recovery pipe 81 is provided so as to penetrate through a plate-like member 64 of the storage unit 60 described later, the bottom of the third ring 63 and the bottom of the second ring 62, and the other end is the spin base 10. And communicated with an internal space (hereinafter also referred to as “first internal space”) 71 of the first ring 61 that is spaced apart (see FIG. 1).
[0037]
Therefore, the chemical liquid temporarily stored in the fourth drainage tank 28d is quickly dropped from the three first discharge ports 91 toward the first chemical liquid recovery pipe 81 and stored in the first ring 61. That is, the chemical liquid received and recovered by the recovery port 54 c is quickly discharged from the fourth drainage tank 28 d disposed in the vicinity of the spin base 10, and is supplied to the first ring 61 provided apart from the spin base 10. Stored.
[0038]
In the present embodiment, as shown in FIG. 4, three first discharge ports 91 are provided at equal intervals (120 ° intervals) along the bottom of the doughnut-shaped fourth drainage tank 28d. However, the present invention is not limited to this, and the number of discharge ports is not limited to this as long as the chemical liquid can be quickly discharged from the fourth drainage tank 28d.
[0039]
Similarly, at the bottom of the third drainage tank 28c, as shown in FIG. 2, a plurality of second discharge ports 92 communicating with the upper end of the second chemical liquid recovery pipe 82 (three in this embodiment: (See FIG. 4). The second chemical solution recovery pipe 82 is provided so as to penetrate a plate-like member 64 of the storage unit 60 and a bottom of the third ring 63 which will be described later, and the other end is provided apart from the spin base 10. It communicates with an internal space (hereinafter also referred to as “second internal space”) 72 of the second ring 62 (see FIG. 1).
[0040]
Therefore, the chemical liquid temporarily stored in the third drainage tank 28 c is quickly dropped from the three second discharge ports 92 toward the second chemical liquid recovery pipe 82 and stored in the second ring 62. In other words, the chemical liquid received and recovered by the recovery port 53d is quickly discharged from the third drainage tank 28c disposed in the vicinity of the spin base 10, and is supplied to the second ring 62 provided away from the spin base 10. Stored.
[0041]
In the present embodiment, three second discharge ports 92 are provided at equal intervals (120 ° intervals) along the bottom of the doughnut-shaped third drainage tank 28c, as with the first discharge ports 91. However, the present invention is not limited to this, and the number of outlets is not limited to this as long as the chemical liquid can be quickly discharged from the third drain tank 28c.
[0042]
Furthermore, similarly, as shown in FIG. 2, a plurality of third discharge ports 93 communicating with the upper end of the third chemical solution recovery pipe 83 are provided at a plurality of locations (three in the present embodiment: 3) at the bottom of the second drainage tank 28b. (See FIG. 4). The third chemical solution recovery pipe 83 is provided so as to penetrate a plate-like member 64 of a storage unit 60 described later, and the other end is an internal space of a third ring 63 provided apart from the spin base 10 ( Hereinafter, it is communicated with 73 (also referred to as “third internal space”) (see FIG. 1).
[0043]
Therefore, the chemical solution temporarily stored in the second drainage tank 28 b quickly falls from the three third discharge ports 93 toward the third chemical solution recovery pipe 83 and is stored in the third ring 63. That is, the chemical liquid received and recovered by the recovery port 52f is quickly discharged from the second drainage tank 28b disposed in the vicinity of the spin base 10, and is supplied to the third ring 63 provided apart from the spin base 10. Stored.
[0044]
In the present embodiment, the third discharge ports 93 are equally spaced (120 ° intervals) along the bottom of the doughnut-shaped second drainage tank 28b, like the first discharge ports 91 and the second discharge ports 92. However, the number of outlets is not limited to this as long as the chemical liquid can be quickly discharged from the second drain tank 28b.
[0045]
By the way, in the conventional substrate processing apparatus, the chemical liquid collected by the guide 51f and stored in the first drain tank 28a is not quickly discharged outside the substrate processing apparatus, and the chemical liquid stays in the vicinity of the substrate. . Therefore, due to the rotation of the spin base 10, the chemical solution flows backward from the first drainage tank 28 a through the flow path 51 and the guide portion 51 f toward the substrate W supported by the spin base 10. It was the cause of processing failure of the substrate. Moreover, the chemical | medical solution collect | recovered by the 2nd drainage tank 28b-the 4th drainage tank 28d also caused the process defect of the board | substrate for the same reason.
[0046]
However, in the present embodiment, the chemical liquid collected in the first drainage tank 28a to the fourth drainage tank 28d is subjected to substrate processing by the corresponding rinse liquid discharge pipe 84 to first chemical liquid collection pipe 81 as described above. A plurality of outlets that are spaced apart from the vicinity of the spin base 10 where the heat treatment is performed and that are distributed in places separated by the base member 24 (the first internal space 71 to the third internal space 73 and the drainage drain 88) It is discharged using. Thereby, since the time which a chemical | medical solution stays in the 1st drainage tank 28a-the 4th drainage tank 28d arrange | positioned in the board | substrate W vicinity can be reduced, a board | substrate process can be performed favorably.
[0047]
Subsequently, the storage unit 60 will be described. As shown in FIG. 1, the storage unit 60 mainly includes a first ring 61, a second ring 62, and a third ring 63 that are stacked in the vertical direction and used as a plurality of storage tanks. Each ring is laminated from the bottom to the top in the order of the first ring 61, the second ring 62, and the third ring 63. Thus, since the space of the storage unit 60 can be reduced by arranging the rings 61 to 63 in a stacked manner, the floor area of the substrate processing apparatus 1 can be reduced.
[0048]
FIG. 5 is a diagram schematically illustrating the first ring 61 of the storage unit 60. FIG. 5A is a cross-sectional view of the first ring 61 shown in FIG. 5B as seen from the line W1-W1. In addition, the rinse liquid discharge piping 84 is abbreviate | omitted on account of drawing. As shown in FIG. 5, the first inner space 71 of the first ring 61 has a donut shape similar to that of the fourth drainage tank 28 d, and the upper part thereof is sealed by the bottom part of the second ring 62. ing. Thus, the 1st internal space 71 of the 1st ring 61 can be used as a storage tank which stores a chemical | medical solution.
[0049]
The first exhaust pipe 111 is a single pipe provided to exhaust the atmosphere of the first internal space 71 of the first ring 61 to the outside. As shown in FIG. 5 (b), the first exhaust pipe 111 is disposed so as to penetrate the bottom of the first ring 61, and its upper end is provided near the upper portion of the first internal space 71. Yes. Thereby, even if the chemical liquid temporarily stored in the fourth drainage tank 28d is discharged to the first ring 61 via the first chemical liquid recovery pipe 81, the chemical liquid is mixed into the first exhaust pipe 111. Can be prevented.
[0050]
The lower end of the first exhaust pipe 111 is communicated with the first exhaust mechanism 114 via the pipe 112 and the valve 113, and the atmosphere in the first internal space 71 can be discharged to the outside of the substrate processing apparatus 1. Thus, the first exhaust pipe 111 is used as an exhaust path for exhausting the atmosphere of the first internal space 71 to the outside of the first internal space 71.
[0051]
As described above, the first internal space 71 is connected to the recovery port 54c through the first chemical recovery pipe 81 and the flow path 54d. Accordingly, the first internal space 71 is exhausted by the first exhaust mechanism 114 to exhaust the atmosphere in the vicinity of the recovery port 54c, and the chemical liquid temporarily stored in the fourth drainage tank 28d is discharged to the fourth drainage. It can be forcibly discharged from the tank 28d. Therefore, the mist of the processing liquid near the spin base 10 is discharged to the outside of the substrate processing apparatus 1, and the chemical liquid temporarily stored in the fourth drainage tank 28 d by the suction force of the first exhaust mechanism 114 is stored in the first ring 61. Can be discharged quickly toward
[0052]
In the present embodiment, the inner space of the fourth drainage tank 28d (the space surrounded by the inner bottom of the fourth drainage tank 28d, the outer wall of the casing 25, and the inner wall of the partition member 27a) and the first ring. The first internal space 71 inside 61 has a donut shape and substantially the same shape, and is arranged at equal intervals along the bottom of the fourth drainage tank 28d (radially arranged at equal angular intervals). The plurality of first chemical liquid recovery pipes 81 communicate with each other (see FIG. 4).
[0053]
By adopting such a structure, the pipe resistance of the chemical liquid flowing through the first chemical liquid recovery pipe 81 can be reduced. Therefore, even if there is one first exhaust pipe 111 communicated with the first exhaust mechanism 114, the chemical liquid can be efficiently discharged from the fourth drainage tank 28d toward the first ring 61. The hardware configuration related to the exhaust in the vicinity of one ring 61 can be simplified.
[0054]
As shown in FIG. 5, the vertical position of the inner bottom portion of the first ring 61 is created so as to gradually decrease from the inner wall 61a toward the outer wall 61b. And the 1st ring 61 is connected with the end of the 1st chemical | medical solution drainage pipe 116 via the 1st drainage opening 61c provided in the inner-side bottom part vicinity of the outer wall 61b. Further, the other end of the first chemical liquid drain pipe 116 is communicated with the first drain mechanism 119 via a pipe 117 and a valve 118. Therefore, by opening the valve 118, the used chemical liquid stored in the first ring 61 can be discharged toward the first drainage mechanism 119. Here, the first drainage mechanism 119 discharges the used chemical solution stored in the first ring 61 to the outside of the first ring 61 and removes impurities contained in the used chemical solution to clean them. This is a mechanism that enables the substrate processing to be used again for substrate processing, and enables the chemical solution to be circulated and reused in the substrate processing apparatus 1.
[0055]
Further, as described above, the first ring 61 collects the atmosphere (gas) near the spin base 10 and the chemical liquid (liquid) scattered from the spin base 10 by rotating the substrate W, and the gas is the first. The liquid is discharged to the first exhaust mechanism 114 via the exhaust pipe 111, and the liquid is discharged to the first drain mechanism 119 via the first chemical liquid drain pipe 116, respectively. That is, the first ring 61 has a gas-liquid separation function that separates the gas and the liquid contained in the first internal space 71.
[0056]
FIG. 6 is a diagram schematically illustrating the second ring 62 of the storage unit 60. FIG. 6A is a cross-sectional view of the second ring 62 shown in FIG. 6B as seen from the line W2-W2. In addition, the 1st chemical | medical solution collection | recovery piping 81 and the rinse liquid discharge piping 84 are abbreviate | omitted for convenience of drawing. As shown in FIG. 6, the second inner space 72 of the second ring 62 has a donut shape similar to that of the third drainage tank 28 c, and the upper part thereof is sealed by the bottom of the third ring 63. ing. Thus, the 2nd internal space 72 of the 2nd ring 62 can be used as a storage tank which stores a chemical | medical solution.
[0057]
The second exhaust pipe 121 is a single pipe provided to exhaust the atmosphere of the second internal space 72 of the second ring 62 to the outside. As shown in FIG. 6 (b), the second exhaust pipe 121 is disposed so as to penetrate the bottoms of the first ring 61 and the second ring 62, and the upper end thereof is near the upper part of the second internal space 72. It is provided as follows. Thereby, even if the chemical liquid temporarily stored in the third drainage tank 28c is discharged to the second ring 62 through the second chemical liquid recovery pipe 82, the chemical liquid is mixed into the second exhaust pipe 121. Can be prevented.
[0058]
The lower end of the second exhaust pipe 121 is communicated with the second exhaust mechanism 124 via a pipe 122 and a valve 123, and the atmosphere in the second internal space 72 can be discharged to the outside of the substrate processing apparatus 1. Thus, the second exhaust pipe 121 is used as an exhaust path for exhausting the atmosphere of the second internal space 72 to the outside of the second internal space 72.
[0059]
As described above, the second internal space 72 is connected to the recovery port 53d through the second chemical recovery pipe 82 and the flow path 53e. Thereby, the second internal space 72 is exhausted by the second exhaust mechanism 124 to exhaust the atmosphere in the vicinity of the recovery port 53d, and the chemical liquid temporarily stored in the third drainage tank 28c is discharged to the third drainage. It can be forcibly discharged from the tank 28c. Therefore, the mist of the processing liquid in the vicinity of the spin base 10 is discharged to the outside of the substrate processing apparatus 1, and the chemical liquid temporarily stored in the third drainage tank 28 c by the suction force of the second exhaust mechanism 124 is stored in the second ring 62. Can be discharged quickly toward
[0060]
In the present embodiment, the inner space of the third drainage tank 28c (the space surrounded by the inner bottom of the third drainage tank 28c, the outer wall of the partition member 27b, and the inner wall of the partition member 27c) and the first The second inner space 72 inside the two rings 62 is both donut-shaped and has substantially the same shape, and is arranged at equal intervals along the bottom of the third drainage tank 28c (radiation arrangement at equal angular intervals). ) Communicated by a plurality of second chemical solution recovery pipes 82 (see FIG. 4).
[0061]
By adopting such a structure, the pipe resistance of the chemical liquid flowing through the second chemical liquid recovery pipe 82 can be reduced. Therefore, even if there is one second exhaust pipe 121 communicated with the second exhaust mechanism 124, the chemical liquid can be efficiently discharged from the third drain tank 28c toward the second ring 62. The hardware configuration related to the exhaust of the two rings 62 can be simplified.
[0062]
As shown in FIG. 6, the vertical position of the inner bottom portion of the second ring 62 is created so as to gradually decrease from the inner wall 62a toward the outer wall 62b. And the 2nd ring 62 is connected with the end of the 2nd chemical | medical solution drainage pipe 126 via the 2nd drainage port 62c provided in the inner side bottom part vicinity of the outer wall 62b. Further, the other end of the second chemical liquid drain pipe 126 is communicated with the second drain mechanism 129 via a pipe 127 and a valve 128. Therefore, the used chemical liquid stored in the second ring 62 can be discharged toward the second drainage mechanism 129 by opening the valve 128. The second drainage mechanism 129 discharges the used chemical liquid stored in the second ring 62 to the outside of the second ring 62 and is included in the used chemical liquid, similarly to the first drainage mechanism 119. This is a mechanism for removing impurities and performing a cleaning process and the like so that the substrate can be used again.
[0063]
Similarly to the first ring 61, the second ring 62 collects the atmosphere (gas) in the vicinity of the spin base 10 and the chemical liquid (liquid) scattered from the spin base 10 by rotating the substrate W. It has a gas-liquid separation function for separating gas and liquid.
[0064]
FIG. 7 is a diagram schematically illustrating the third ring 63 of the storage unit 60. FIG. 7A is a cross-sectional view of the third ring 63 shown in FIG. 7B as seen from the line W3-W3. In addition, the 1st chemical | medical solution collection | recovery piping 81, the 2nd chemical | medical solution collection | recovery piping 82, and the rinse liquid discharge piping 84 are abbreviate | omitted for convenience of drawing. As shown in FIG. 7, the second inner space 72 of the third ring 63 has a donut shape similar to that of the second drainage tank 28 b, and the upper part thereof is sealed with a plate-like member 64. . Thus, the 3rd internal space 73 of the 3rd ring 63 can be used as a storage tank which stores a chemical solution.
[0065]
The third exhaust pipe 131 is a single pipe provided to exhaust the atmosphere of the third internal space 73 of the third ring 63 to the outside. As shown in FIG. 7B, the third exhaust pipe 131 is disposed through the bottoms of the first ring 61, the second ring 62, and the third ring 63, and the upper end of the third exhaust pipe 131 is the third internal space. 73 is provided in the vicinity of the upper part of 73. As a result, even if the chemical liquid temporarily stored in the second drainage tank 28 b is discharged to the third ring 63 via the third chemical liquid recovery pipe 83, the chemical liquid is mixed into the third exhaust pipe 131. Can be prevented.
[0066]
The lower end of the third exhaust pipe 131 is communicated with the third exhaust mechanism 134 via the pipe 132 and the valve 133, and the atmosphere of the third internal space 73 can be discharged to the outside of the substrate processing apparatus 1. Thus, the third exhaust pipe 131 is used as an exhaust path for exhausting the atmosphere of the third internal space 73 to the outside of the third internal space 73.
[0067]
As described above, the third internal space 73 is connected to the recovery port 52f through the third chemical recovery pipe 83 and the flow path 52g. Thereby, the third internal space 73 is exhausted by the third exhaust mechanism 134 to exhaust the atmosphere in the vicinity of the recovery port 52f, and the chemical liquid temporarily stored in the second drainage tank 28b is discharged to the second drainage liquid. It can be forcibly discharged from the tank 28b. Therefore, the mist of the processing liquid in the vicinity of the spin base 10 is discharged to the outside of the substrate processing apparatus 1, and the chemical liquid temporarily stored in the second drainage tank 28 b by the suction force of the third exhaust mechanism 134 is stored in the third ring 63. Can be discharged quickly toward
[0068]
In the present embodiment, the inner space of the second drainage tank 28b (the space surrounded by the inner bottom of the second drainage tank 28b, the outer wall of the partition member 27a, and the inner wall of the partition member 27b) and the first The third inner space 73 inside the three ring 63 is a donut shape and has substantially the same shape, and is arranged at equal intervals along the bottom of the second drainage tank 28b (radiation arrangement at equal angular intervals). ) Communicated by a plurality of third chemical recovery pipes 83 (see FIG. 4).
[0069]
By adopting such a structure, the pipe resistance of the chemical liquid flowing through the third chemical liquid recovery pipe 83 can be reduced. Therefore, even if there is one third exhaust pipe 131 communicated with the third exhaust mechanism 134, the chemical liquid can be efficiently discharged from the second drain tank 28b toward the third ring 63, The hardware configuration relating to the exhaust of the 3-ring 63 can be simplified.
[0070]
As shown in FIG. 7, the vertical position of the inner bottom portion of the third ring 63 is created so as to gradually decrease from the inner wall 63a toward the outer wall 63b. And the 3rd ring 63 is connected with the end of the 3rd chemical | medical solution drainage pipe 136 through the 3rd drainage port 63c provided in the inner side bottom part vicinity of the outer wall 63b. Further, the other end of the third chemical liquid drain pipe 136 is communicated with the third drain mechanism 139 via a pipe 137 and a valve 138. Therefore, by opening the valve 138, the used chemical liquid stored in the third ring 63 can be discharged toward the third drainage mechanism 139. The third drainage mechanism 139 discharges the used chemical solution stored in the third ring 63 to the outside of the third ring 63, similarly to the first drainage mechanism 119 and the second drainage mechanism 129. This is a mechanism that removes impurities contained in the used chemical solution and cleans it to make it usable again for substrate processing.
[0071]
Similarly to the first ring 61 and the second ring 62, the third ring 63 includes an atmosphere (gas) in the vicinity of the spin base 10 and a chemical solution (liquid) scattered from the spin base 10 by rotating the substrate W. And has a gas-liquid separation function for separating these gases and liquids.
[0072]
The combinations of the first chemical solution recovery pipe 81 and the first ring 61, the second chemical solution recovery pipe 82 and the second ring 62, and the third chemical solution recovery pipe 83 and the third internal space 73 described above correspond to the corresponding fourth exhaust. It is comprised as a storage part which stores the chemical | medical solution discharged | emitted from the liquid tank 28d, the 3rd drainage tank 28c, and the 2nd drainage tank 28b.
[0073]
In addition, the first ring 61 to the third ring 63 are selectively used according to the type of the chemical solution, the first chemical solution is collected in the third ring 63, the second chemical solution is collected in the second ring 62, and the third The chemical solution may be collected in the first ring 61.
[0074]
Returning to FIG. 2, a splash guard 50 is provided above the receiving member 26. The splash guard 50 is disposed so as to surround the substrate W held in a horizontal posture on the spin base 10 in an annular shape, and is arranged concentrically with the spin base 10 from the inside to the outside. A four-stage structure comprising four guards 51, 52, 53, 54 is provided. The four guards 51 to 54 are configured such that the height decreases in order from the outermost guard 54 toward the innermost guard 51. Further, the upper end portions of the guards 51 to 54 are within a substantially vertical plane.
[0075]
The guard 51 includes a cylindrical portion 51b concentric with the spin base 10, a protruding portion 51a that protrudes obliquely upward from the upper end of the cylindrical portion 51b toward the center side (the spin base 10 side), and a center from the lower end of the cylindrical portion 51b. An inclined portion 51c that extends obliquely downward on the side, a cylindrical portion 51e that extends vertically downward from the lower end of the cylindrical portion 51b with the same inner diameter, and a cylindrical portion 51d that extends vertically downward from the lower end of the inclined portion 51c. . The cylindrical portion 51e is outside the cylindrical portion 51d, and a cylindrical groove 51h is formed between the cylindrical portion 51e and the cylindrical portion 51d.
[0076]
The inside of the guard 51, that is, the portion surrounded by the protruding portion 51a, the cylindrical portion 51b, and the inclined portion 51c is a guide portion 51f (first guide portion). The cross section of the guide portion 51f is substantially U-shaped and opens toward the center of the splash guard 50.
[0077]
The guard 52 has a cylindrical portion 52b concentric with the spin base 10, a protruding portion 52a that protrudes obliquely upward from the upper end of the cylindrical portion 52b toward the center, and an inclination that extends obliquely downward from the lower end of the cylindrical portion 52b to the center side. A cylindrical portion 52d branched from the lower end of the inclined portion 52c and extending downward in the vertical direction; and a cylindrical portion 52e branched from the lower end of the inclined portion 52c to the outside of the cylindrical portion 52d and extended downward in the vertical direction. Has been. The cylindrical portion 52e is located outside the cylindrical portion 52d, and a cylindrical groove 52h is formed between the cylindrical portion 52e and the cylindrical portion 52d.
[0078]
The guard 53 has a cylindrical portion 53b concentric with the spin base 10, a protruding portion 53a that protrudes obliquely upward from the upper end of the cylindrical portion 53b toward the center, and a branch from the inner wall surface of the cylindrical portion 53b. It is comprised by the provided cylindrical part 53c. The cylindrical part 53b is located outside the cylindrical part 53c, and a cylindrical groove 53f is formed between the cylindrical part 53b and the cylindrical part 53c.
[0079]
The guard 54 includes a cylindrical portion 54b that is concentric with the spin base 10, and a protruding portion 54a that protrudes obliquely upward from the upper end of the cylindrical portion 54b toward the center.
[0080]
A space between the protruding portion 51a and the protruding portion 52a, that is, a portion surrounded by the protruding portion 52a, the cylindrical portion 52b, the inclined portion 52c, and the protruding portion 51a becomes the recovery port 52f (second guide portion). Further, the space between the protruding portion 52a and the protruding portion 53a becomes the recovery port 53d (third guide portion), and similarly, the space between the protruding portion 53a and the protruding portion 54a is the recovery port 54c (fourth guide portion). ) The recovery port 54c, the recovery port 53d, the recovery port 52f, and the guide portion 51f all have an annular shape concentric with the spin base 10, and hold the processing liquid scattered from the rotating substrate W in the spin base 10. It is received by the side of the substrate W.
[0081]
As shown in FIG. 2, the recovery port 54c, the recovery port 53d, the recovery port 52f, and the guide portion 51f are stacked in multiple stages from the top. In other words, the inside of the guard 51, the gap between the guard 51 and the guard 52, the gap between the guard 52 and the guard 53, and the gap between the guard 53 and the guard 54 in the vertical direction are the guide portion 51f, the recovery port 52f, and the recovery port, respectively. 53d and a recovery port 54c.
[0082]
In the present embodiment, the guide 51f receives the rinse liquid scattered from the rotating substrate W, and the recovery port 52f, the recovery port 53d, and the recovery port 54c are used to receive the chemical liquid scattered from the rotating substrate W. . Therefore, the recovery port 52f, the recovery port 53d, and the recovery port 54c that receive the chemical liquid are stacked in multiple stages on the guide portion 51f that receives the rinse liquid.
[0083]
On the other hand, the part along the inner wall surface of the cylindrical part 51d becomes the first flow path 51g. In addition, a space between the outer wall surface of the cylindrical portion 51e and the inner wall surface of the cylindrical portion 52d is the second flow path 52g, and a space between the outer wall surface of the cylindrical portion 52e and the inner wall surface of the cylindrical portion 53c is the third flow path 53e. A space between the outer wall surface of the cylindrical portion 53b and the inner wall surface of the cylindrical portion 54b is a fourth flow path 54d.
[0084]
As shown in FIG. 2, the first flow path 51g, the second flow path 52g, the third flow path 53e, and the fourth flow path 54d are arranged in order from the inside, and each of the first flow path 51g to the fourth flow path 54d is It becomes a cylindrical shape concentric with the spin base 10. In other words, the inner side of the guard 51, the gap between the guard 51 and the guard 52, the gap between the guard 52 and the guard 53, and the gap between the guard 53 and the guard 54 in the horizontal direction are respectively the first flow path 51g and the second flow path. 52g, the third flow path 53e, and the fourth flow path 54d. In addition, a connection member (not shown) is provided in each of the cylindrical second flow path 52g, the third flow path 53e, and the fourth flow path 54d, and the guards 51 adjacent to each other by the connection members. -54 are connected, and the guards 51-54 constitute the splash guard 50 as a unit.
[0085]
Further, the first flow path 51g communicates with the guide part 51f, and the rinse liquid received by the guide part 51f flows downward. The second flow path 52g communicates with the recovery port 52f, and causes the chemical liquid received by the recovery port 52f to flow downward. Similarly, the third flow path 53e communicates with the recovery port 53d, the chemical liquid received by the recovery port 53d flows downward, and the fourth flow path 54d communicates with the recovery port 54c, and the recovery port 54c. The chemical solution received by is poured downward. That is, the first flow path 51g, the second flow path 52g, the third flow path 53e, and the fourth flow path 54d have a one-to-one correspondence with the guide portion 51f, the recovery port 52f, the recovery port 53d, and the recovery port 54c. Each is provided so that the processing liquid guided from the corresponding guide portion flows downward.
[0086]
As shown in FIG. 2, the splash guard 50 can be moved up and down along the vertical direction by a guard lifting mechanism 55. As the guard lifting / lowering mechanism 55, various known mechanisms such as a feed screw mechanism using a ball screw and a mechanism using an air cylinder can be employed.
[0087]
When the guard lifting mechanism 55 lowers the splash guard 50 from the state shown in FIG. 2, the partition members 27b and 27c are loosely fitted in the grooves 52h and 53f, respectively, and the partition member 27a is loosely fitted in the groove 51f. In the state where the splash guard 50 is lowered most, the spin base 10 protrudes from the upper end of the splash guard 50 as shown in FIG. In this state, the substrate W can be delivered to the spin base 10 by a transfer robot (not shown).
[0088]
On the other hand, when the guard lifting mechanism 55 raises the splash guard 50 most, the partition members 27a, 27b, and 27c are separated from the grooves 51f, 52h, and 53f, respectively, and are held by the spin base 10 and the spin base 10 as shown in FIG. The guide portion 51f is positioned around the substrate W. This state is a state at the time of the rinsing process, and the rinsing liquid splashed from the rotating substrate W or the like is received by the guide portion 51f, guided from the guide portion 51f to the first flow path 51g, and along the first flow path 51g. Then, it flows downward and flows into the first drainage tank 28a. The rinse liquid that has flowed into the first drain tank 28 a is discharged to the rinse liquid discharge pipe 84.
[0089]
When the guard lifting mechanism 55 slightly lowers the splash guard 50 from the state shown in FIG. 9, the recovery port 52f is positioned around the spin base 10 and the substrate W held thereon (see FIG. 2). This state is a state at the time of chemical treatment using the first chemical solution, and the first chemical solution is collected and reused. The first chemical solution scattered from the rotating substrate W or the like is received by the collection port 52f. Then, it is guided from the recovery port 52f to the second flow path 52g, flows downward along the second flow path 52g, and flows into the second drainage tank 28b. The first chemical liquid flowing into the second drainage tank 28b is discharged to the third chemical liquid recovery pipe 82.
[0090]
When the guard elevating mechanism 55 further lowers the splash guard 50 slightly from the state of FIG. 2, the recovery port 53d is positioned around the spin base 10 and the substrate W held thereon. This state is a state at the time of chemical treatment using the second chemical solution, and the second chemical solution is collected and reused. The second chemical solution scattered from the rotating substrate W or the like is received by the collection port 53d. Then, it is guided from the recovery port 53d to the third flow path 53e, flows downward along the third flow path 53e, and flows into the third drainage tank 28c. The second chemical liquid flowing into the third drainage tank 28c is discharged to the second chemical liquid recovery pipe 82.
[0091]
Similarly, when the guard lifting / lowering mechanism 55 further lowers the splash guard 50 slightly, the recovery port 54c is positioned around the spin base 10 and the substrate W held thereon. This state is a state at the time of chemical treatment using the third chemical solution, and the third chemical solution is collected and reused. The third chemical solution scattered from the rotating substrate W or the like is received by the collection port 54c. Then, it is guided from the recovery port 54c to the fourth flow path 54d, flows downward along the fourth flow path 54d, and flows into the fourth drainage tank 28d. The third chemical liquid flowing into the fourth drainage tank 28d is discharged to the first chemical recovery pipe 81.
[0092]
In this way, the guard lifting mechanism 55 guides the processing liquid scattered from the rotating substrate W in accordance with the recovery mode of the processing liquid (recovery for each type of processing liquid, recovery for disposal / recovery, etc.). The positional relationship between the substrate W held on the spin base 10 and each guide portion is adjusted so as to be received by the portion.
[0093]
Above the spin base 10, an atmosphere blocking plate 30 that faces the upper surface of the substrate W held by the spin base 10 is provided. The atmosphere blocking plate 30 is a disk-like member having a diameter slightly larger than the diameter of the substrate W and smaller than the diameter of the upper opening of the splash guard 50. The atmosphere shielding plate 30 has an opening at the center.
[0094]
A rotation shaft 35 is vertically provided on the upper surface side of the central portion of the atmosphere blocking plate 30. The rotating shaft 35 is a hollow cylindrical member, and an upper processing liquid nozzle 36 is inserted in a hollow portion inside thereof. A rotation drive mechanism 42 is interlocked and connected to the rotation shaft 35. The rotation drive mechanism 42 includes an electric motor and a torque transmission mechanism that transmits the rotation to the rotation shaft 35. The rotation shaft 35 and the atmosphere blocking plate 30 are centered on an axis J along the vertical direction in a horizontal plane. Can be rotated. Therefore, the atmosphere shielding plate 30 is rotated substantially parallel and coaxial with the substrate W. In addition, the atmosphere shielding plate 30 is rotated at substantially the same rotational speed as the substrate W.
[0095]
The upper processing liquid nozzle 36 passes through the rotation shaft 35, and the tip end portion 36 a is located immediately above the center portion of the substrate W held by the spin base 10. Further, the base end portion of the upper processing liquid nozzle 36 is connected in communication with a processing liquid pipe 37. As shown in FIG. 3, the base end portion of the processing liquid pipe 37 is branched into four, the first chemical liquid supply source 17a is connected to the branch pipe 37a, and the second chemical liquid supply source is connected to the branch pipe 37b. 17b is connected in communication, the third chemical liquid supply source 17c is connected in communication with the branch pipe 37c, and the pure water supply source 18 is connected in communication with the branch pipe 37d. The branch pipes 37a, 37b, 37c, and 37d are provided with valves 38a, 38b, 38c, and 38d, respectively. By switching between opening and closing of the valves 38a, 38b, 38c, and 38d, the first to third chemical liquids or the third chemical liquid or The rinse liquid can be selectively switched and discharged and supplied.
[0096]
That is, the first chemical liquid can be supplied from the upper processing liquid nozzle 36 by opening the valve 38a and closing the other valves, and the upper processing liquid by opening the valve 38b and closing the other valves. The second chemical liquid can be supplied from the nozzle 36, the third chemical liquid can be supplied from the upper processing liquid nozzle 36 by opening the valve 38c and closing the other valves, and the valve 38d is opened. The rinsing liquid can be supplied from the upper processing liquid nozzle 36 by closing the other valves.
[0097]
In addition, a gap between the inner wall of the hollow portion of the rotating shaft 35 and the inner wall of the opening at the center of the atmosphere blocking plate 30 and the outer wall of the upper processing liquid nozzle 36 is a gas supply path 45. The tip 45 a of the gas supply path 45 is directed to the center of the upper surface of the substrate W held by the spin base 10. The base end portion of the gas supply path 45 is connected to the gas pipe 46 in communication. As shown in FIG. 3, the gas pipe 46 is connected to the inert gas supply source 23, and a valve 47 is provided in the middle of the path of the gas pipe 46. By opening the valve 47, an inert gas (here, nitrogen gas) can be supplied from the tip 45a of the gas supply path 45 toward the center of the upper surface of the substrate W held by the spin base 10.
[0098]
Further, the atmosphere shielding plate 30 can be moved up and down along the vertical direction by an elevating mechanism 49. As the elevating mechanism 49, various known mechanisms such as a feed screw mechanism using a ball screw and a mechanism using an air cylinder can be adopted. For example, the rotary shaft 35 and the rotation drive mechanism 42 may be accommodated in the support arm, and the entire support arm may be moved up and down by the lifting mechanism 49. The raising / lowering mechanism 49 raises / lowers the support arm, thereby raising and lowering the rotary shaft 35 and the atmosphere shielding plate 30 connected thereto. More specifically, the elevating mechanism 49 elevates and lowers the atmosphere blocking plate 30 between a position close to the upper surface of the substrate W held by the spin base 10 and a position far away from the upper surface of the substrate W. . When the atmosphere blocking plate 30 comes close to the upper surface of the substrate W held on the spin base 10, the entire surface of the substrate W is covered.
[0099]
FIG. 8 is a block diagram showing the configuration of the control system of the substrate processing apparatus. The substrate processing apparatus is provided with a control unit 99 configured by a computer having a CPU, a memory, and the like. The control unit 99 is electrically connected to the rotation drive mechanisms 20 and 42, the elevating mechanism 49, the guard elevating mechanism 55, and the valves, and controls their operations. The control unit 99 is also connected to a sensor (not shown) that detects the height position of the splash guard 50. The control unit 99 recognizes the height position of the splash guard 50 based on the output signal from the sensor, and controls the guard lifting mechanism 55 to position the splash guard 50 at a desired height.
[0100]
<2. Substrate processing procedure>
Here, a processing procedure of the substrate W in the substrate processing apparatus having the above configuration will be described. The basic processing procedure in this substrate processing apparatus is to perform etching treatment with a chemical solution on the substrate W, then rinse the chemical solution with a rinsing solution, and then rotate the substrate W at high speed to remove water droplets. The spin dry process is performed. In the present embodiment, it is assumed that bevel etching of the peripheral portion of the substrate W is performed by the first chemical solution.
[0101]
First, the splash guard 50 is lowered to cause the spin base 10 to protrude from the splash guard 50 (see FIG. 10), and the atmosphere blocking plate 30 is greatly raised to be separated greatly from the spin base 10. In this state, an unprocessed substrate W is delivered to the spin base 10 by a transfer robot (not shown). And the said board | substrate W is hold | maintained in a horizontal attitude | position by hold | gripping the peripheral part of the board | substrate W to which the chuck pin 14 was passed.
[0102]
Next, the splash guard 50 is raised to be positioned around the spin base 10 and the substrate W held thereon, and the atmosphere blocking plate 30 is lowered to approach the substrate W. However, the atmosphere blocking plate 30 is not in contact with the substrate W. At this time, the control unit 99 controls the guard lifting mechanism 55 so that the processing liquid splashed from the rotating substrate W during the etching process is received by the spin base 10 by the guide unit corresponding to the processing liquid recovery mode. The positional relationship between the held substrate W and the splash guard 50 is adjusted, that is, the height position of the splash guard 50 is adjusted. Since the recovery form in this embodiment is to recover the first chemical solution for reuse, the corresponding guide portion is the recovery port 52f, and the guard lifting mechanism 55 raises the splash guard 50 to raise the spin base 10 The recovery port 52f is positioned around the substrate W held by the substrate W (see FIG. 2).
[0103]
Next, the substrate W held by the spin base 10 is rotated. Further, the atmosphere blocking plate 30 is also rotated. In this state, the chemical liquid is discharged from the lower processing liquid nozzle 15 only to the lower surface of the substrate W. The chemical liquid discharged from the lower processing liquid nozzle 15 spreads over the entire back surface of the substrate W due to centrifugal force, and a part of the chemical solution reaches the periphery of the surface of the substrate W. Etching (bevel etching) of the peripheral portion of the surface of the substrate W proceeds by the chemical solution that has come around. During the etching process, a small amount of nitrogen gas may be discharged from the gas supply path 19 and the gas supply path 45 to prevent the backflow of the chemical liquid to the gas supply paths 19 and 45.
[0104]
During the etching process, the first chemical liquid scattered from the rotating substrate W is received by the recovery port 52f, guided from the recovery port 52f to the second flow path 52g, and flows downward along the second flow path 52g. It flows into the drainage tank 28b and is temporarily stored. Subsequently, the first chemical liquid stored in the second drainage tank 28b is quickly supplied from the three third discharge ports 93 provided at the bottom of the second drainage tank 28b through the third chemical liquid recovery pipe 83. It is discharged and stored in a third ring 63 provided away from the spin base 10. Thereby, since the time for the first chemical solution to stay in the vicinity of the substrate W can be reduced, the substrate processing can be performed satisfactorily.
[0105]
Further, the atmosphere containing the processing liquid mist near the spin base 10 is forcibly exhausted into the third internal space 73 of the third ring 63 by opening the valve 133 and operating the third exhaust mechanism 134. Thereby, the mist of the processing liquid floating in the vicinity of the spin base 10 can be removed from the vicinity of the substrate W. Therefore, it is possible to prevent the processing failure of the substrate from occurring due to the processing liquid mist.
[0106]
The chemical solution collected in the third ring 63 and the atmosphere containing the mist of the processing solution are separated from each other, and the used chemical solution is discharged out of the third ring 63 by the third drainage mechanism 139 and impurities. A process for removing the substrate is performed, and the substrate can be used again for the substrate processing. In addition, the atmosphere containing the mist of the processing liquid is discharged to an exhaust drain (not shown) via the third exhaust mechanism 134.
[0107]
After the etching process for a predetermined time is completed, the discharge of the chemical liquid from the lower processing liquid nozzle 15 is stopped, and the splash guard 50 is slightly raised so that the cylindrical part 51b provided on the inner peripheral surface of the guide part 51f and the spin base 10 so that the chuck pins 14 erected at 10 are substantially the same height. (See FIG. 9). Note that the atmosphere blocking plate 30 maintains a slightly raised state as compared with the etching process. In this state, by opening the valve 38d and the valve 12d (see FIG. 3) while rotating the substrate W, the rinsing liquid is applied to the upper and lower surfaces of the substrate W from the upper processing liquid nozzle 36 and the lower processing liquid nozzle 15. Discharge. The discharged rinse liquid spreads over the entire front and back surfaces of the substrate W due to the centrifugal force of rotation, and a cleaning process (rinsing process) for rinsing the chemical solution with the rinse liquid proceeds.
[0108]
During the rinsing process, the rinsing liquid splashed from the rotating substrate W is received by the guide part 51f of the splash guard 50, guided from the guide part 51f to the first flow path 51g, and flows downward along the first flow path 51g. It flows into the 1st drainage tank 28a, and is stored temporarily. Subsequently, the rinse liquid stored in the first drain tank 28a is quickly discharged from the four rinse liquid outlets 94 provided at the bottom of the first drain tank 28a via the rinse liquid discharge pipe 84, It is discarded in a drainage drain 88 provided apart from the spin base 10.
[0109]
In the present embodiment, pure water is used as the rinse liquid. Further, even during the rinsing process, a small amount of nitrogen gas may be discharged from the gas supply path 19 and the gas supply path 45 to prevent the rinsing liquid from flowing back to the gas supply paths 19 and 45.
[0110]
After completion of the rinsing process for a predetermined time, the rinsing liquid discharge from the upper processing liquid nozzle 36, the lower processing liquid nozzle 15 and the discharge part 61a is stopped, and the splash guard 50 is lowered to bring the spin base 10 into the splash guard 50. Protrude slightly from. Note that the atmosphere shielding plate 30 maintains a state close to the substrate W. In this state, while rotating the substrate W, nitrogen gas is discharged from the gas supply path 19 and the gas supply path 45 and sprayed onto both the upper and lower surfaces of the substrate W. The discharged nitrogen gas flows between the spin base 10 and the substrate W and between the atmosphere blocking plate 30 and the substrate W, and the periphery of the substrate W is set to a low oxygen concentration atmosphere. In a low oxygen concentration atmosphere supplied with nitrogen gas, the water droplets adhering to the substrate W are shaken off by the centrifugal force of rotation, so that the shake-off drying process (spin dry process) proceeds.
[0111]
When the spin dry process for a predetermined time is completed, the rotation of the spin base 10 and the substrate W held thereon is stopped. Further, the rotation of the atmosphere blocking plate 30 is stopped, and the atmosphere blocking plate 30 is raised and separated from the spin base 10. In this state, the transfer robot (not shown) takes out the processed substrate W from the spin base 10 and carries it out, thereby completing a series of substrate processing.
[0112]
<3. Advantages of substrate processing equipment>
In the substrate processing apparatus 1 of the present embodiment, the chemical liquid scattered by rotating the substrate W is temporarily stored in the second drainage tank 28b to the fourth drainage tank 28d, and then from the spin base 10. The first ring 61 to the third ring 63 provided to be spaced apart are discharged to the corresponding ones. In addition, the rinse liquid temporarily stored in the first drain tank 28 a is quickly discharged to the drain drain 88 outside the substrate processing apparatus 1 through the cleaning liquid discharge pipe 84. Therefore, it is possible to reduce the time during which the chemical liquid or the rinse liquid remains in the first drainage tank 28a to the fourth drainage tank 28d. Therefore, it is possible to prevent the processing failure of the substrate W from occurring due to the influence of the chemical liquid and the rinsing liquid remaining in the drain tanks 28a to 28d.
[0113]
Further, the atmosphere around the spin base 10 is forcibly collected in the corresponding first ring 61, second ring 62 and third ring 63 by the first exhaust mechanism 114, the second exhaust mechanism 124 and the third exhaust mechanism 134. Can do. Therefore, since the atmosphere containing the processing liquid mist can be efficiently removed from the vicinity of the substrate W, processing defects of the substrate W can be prevented.
[0114]
The fourth drainage tank 28d and the first ring 61, the third drainage tank 28c and the second ring 62, and the second drainage tank 28b and the third ring 63 each include a plurality of first chemical liquid recovery pipes 81. The second chemical solution recovery pipe 82 and the third chemical solution recovery pipe 83 communicate with each other. The fourth drainage tank 28d and the first ring 61, the third drainage tank 28c and the second ring 62, and the second drainage tank 28b and the third ring 63 are substantially the same shape (donut shape). Have Therefore, the chemical liquid temporarily stored in the second drainage tank 28b to the fourth drainage tank 28d can be efficiently discharged.
[0115]
The first ring 61 to the third ring 63 are stacked in the vertical direction. Thereby, since the space saving of the storage unit 60 can be achieved, the floor area of the substrate processing apparatus 1 can be reduced.
[0116]
<4. Modification>
While the embodiments of the present invention have been described above, the present invention is not limited to the above examples.
[0117]
(1) As described above, in the substrate processing apparatus 1 of the present embodiment, processing is performed using only the third ring 63, but the present invention is not limited to this, and the number of chemicals to be used Depending on the case, the first ring 61 and the second ring 62 may be used.
[0118]
(2) Further, in the substrate processing apparatus 1 of the present embodiment, only the treatment liquid temporarily collected in the second drainage tank 28b to the fourth drainage tank 28d is collected and reused, and the first drainage is performed. The processing liquid temporarily stored in the liquid tank 28a is discarded, but the present invention is not limited to this, and a storage section corresponding to the first drainage tank 28a is provided to collect the used processing liquid. A possible hardware configuration may be adopted.
[0119]
【The invention's effect】
  From claim 1Claim 5According to the present invention, the shape of the inner space of the recovery tank and the shape of the inner space of the storage tank are provided substantially the same, and the processing liquid recovered in the recovery tank is provided at the bottom of the recovery tank. It is stored in a storage tank via a plurality of pipes. Thereby, the piping resistance of the processing liquid flowing through the plurality of pipes can be reduced, and the processing liquid recovered in the recovery tank can be quickly flowed into the storage tank. Therefore, it is possible to reduce the time during which the processing liquid exists in the recovery unit near the substrate, and to perform substrate processing satisfactorily.
[0120]
  In particular,Claim 3According to the invention described in (1), the atmosphere in the vicinity of the substrate can be exhausted by exhausting the atmosphere in the storage tank. Therefore, the atmosphere of the processing liquid scattered near the substrate can be efficiently exhausted by rotating the substrate. Further, by operating the exhaust mechanism, the processing liquid recovered in the first recovery tank can be efficiently discharged toward the first storage tank.
[0121]
  In particular,Claim 4In the storage tank, the atmosphere in the vicinity of the substrate can be separated by the exhaust mechanism and the drainage stored in the processing tank by the drainage mechanism can be separately discharged. It is possible to easily recover the used processing liquid used in the above.
[0122]
  In particular,Claim 5According to the invention described in, the used processing liquid stored in the storage tank can be purified and reused. Therefore, the amount of processing liquid used can be reduced, and the cost of substrate processing can be reduced.
[0123]
  Also,From claim 1According to the fifth aspect of the present invention, since a plurality of first processing liquid recovery means are provided, a plurality of processing liquids can be stored in the corresponding storage tanks.
[0124]
  In particular,Claim 2According to the invention described in (1), since the first processing liquid recovery means and the second processing liquid recovery means can be properly used according to the processing liquid used for the substrate processing, the processing liquid is used after the substrate processing. A distinction can be made between those that are discarded and those that are not.
[0125]
  Also,Claims 1 to 5According to the invention described in the above, by saving each of the storage tanks included in the plurality of first processing liquid recovery means in a multi-stage in a substantially vertical direction, space saving is achieved in a portion where the storage tanks are arranged. Therefore, the floor area of the substrate processing apparatus can be reduced.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing a configuration of a substrate processing apparatus according to the present invention.
FIG. 2 is an enlarged view showing a part A in FIG. 1;
FIG. 3 is a diagram illustrating an example of a supply unit that supplies a processing liquid and an inert gas to a substrate.
4 is a view showing a cross section of the collection tank of FIG. 1 as viewed from the line V1-V1.
FIG. 5 is a diagram schematically illustrating a configuration of a first ring of a storage unit.
FIG. 6 is a diagram schematically showing a configuration of a second ring of the storage unit.
FIG. 7 is a diagram schematically showing a configuration of a third ring of the storage unit.
8 is a block diagram showing a configuration of a control system of the substrate processing apparatus of FIG. 1. FIG.
FIG. 9 is a diagram illustrating an example of a height relationship between a splash guard and a spin base.
FIG. 10 is a diagram showing another example of the height relationship between the splash guard and the spin base.
[Explanation of symbols]
1 Substrate processing equipment
10 Spin base
15 Lower treatment liquid nozzle
20, 42 Rotation drive mechanism
25 casing
26 Receiving member
28 Cup
30 Atmosphere barrier
36 Upper treatment liquid nozzle
50 splash guard
51, 52, 53, 54 Guard
51f Guide section
51g 1st flow path
52f, 53d, 54c Recovery port
52g Second channel
53e Third flow path
54d Fourth channel
60 Reservoir
61 1st ring
62 Second ring
63 3rd ring
64 Plate member
81 First chemical recovery pipe
82 Second chemical recovery pipe
83 Third chemical recovery pipe
84 Rinsing liquid discharge piping
99 Control unit
111 First exhaust pipe
121 Second exhaust pipe
131 3rd exhaust pipe
116 First chemical drainage pipe
126 Second chemical drainage pipe
136 Third chemical drainage tube
W substrate

Claims (5)

In a substrate processing apparatus that performs substrate processing by supplying a predetermined processing liquid to a substrate,
(a) rotation holding means for rotating the substrate in a substantially horizontal plane while holding the substrate in a substantially horizontal position;
(b) first processing liquid recovery means for recovering the processing liquid scattered from the substrate by rotating the rotation holding means;
With
The first treatment liquid recovery means includes
(b-1) a recovery unit that is provided on a side of the rotation holding unit and has a first recovery tank that recovers the processing liquid that is scattered from the substrate by rotation;
(b-2) A storage tank that is provided separately below the first recovery tank and has an inner space shape substantially the same as the inner space shape of the first recovery tank; and the first recovery tank A storage section having a plurality of pipes communicating the bottom of the tank and the inside of the storage tank at a plurality of locations;
Equipped with a,
The first treatment liquid recovery means is plural,
A plurality of said reservoir contained in each of the first processing solution collecting section, a substrate processing apparatus which is characterized that you have been laminated to each other in a substantially vertical direction. The substrate processing apparatus according to claim 1,
(c) second processing liquid recovery means for recovering the processing liquid scattered from the substrate by rotating the rotation holding means;
Further comprising
The second treatment liquid recovery means includes
(c-1) a second collection unit that is provided on a side of the rotation holding unit and collects the processing liquid scattered from the substrate by rotation;
(c-2) a discharge pipe for discharging the processing liquid recovered by the second recovery unit to the outside and discarding it;
The substrate processing apparatus characterized by having a. In the substrate processing apparatus of Claim 1 or Claim 2,
The reservoir is
An exhaust path that communicates with the storage tank and exhausts the atmosphere in the storage tank ;
The substrate processing apparatus further comprising: The substrate processing apparatus according to claim 3,
The reservoir is
A drainage mechanism that communicates with the storage tank and discharges the used processing liquid stored in the storage tank to the outside.
Further comprising a substrate processing apparatus according to claim Rukoto a. The substrate processing apparatus according to claim 4 ,
The drainage mechanism, a substrate processing apparatus according to claim Rukoto to have a cleaning means for reuse clean the spent process liquid.

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