JP5967519B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

In the manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used.
A single-wafer type substrate processing apparatus described in Patent Document 1 includes a spin chuck that holds a substrate horizontally in a chamber, a nozzle that discharges a processing solution such as a chemical solution or a rinsing solution toward the upper surface of the substrate, and a spin chuck. And an air supply unit that supplies clean air into the chamber from an annular air supply port that surrounds the shield plate in plan view. The blocking plate is supported by a lifting arm. The blocking plate moves up and down as the lifting arm moves up and down.

JP 2011-77244 A

  In the substrate processing apparatus provided with the blocking plate, the chemical solution discharged from the nozzle is supplied to the upper surface of the substrate below the blocking plate. When the chemical solution is supplied to the upper surface of the substrate, a chemical solution atmosphere containing chemical solution mist or vapor is generated between the substrate and the blocking plate. However, in Patent Document 1, clean air is discharged downward from an annular air supply port that surrounds the shielding plate in a plan view, so that the chemical liquid atmosphere floating between the substrate and the shielding plate is not easily replaced with clean air. In other words, the chemical atmosphere tends to stay between the substrate and the shielding plate.

  The supply of the processing liquid from the nozzle to the substrate is performed in a state where the blocking plate is retracted above the substrate. The substrate is dried in a state where the shielding plate is close to the substrate after the treatment liquid is supplied. After the substrate is dried, the shielding plate is retracted again above the substrate. When the shielding plate is lowered when the substrate is dried, the chemical atmosphere is discharged from between the substrate and the shielding plate. However, when the shielding plate rises after the substrate is dried, the discharged chemical liquid atmosphere flows between the substrate and the shielding plate and comes into contact with the dried substrate. Therefore, the substrate may be contaminated.

  Accordingly, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can increase the cleanliness of a substrate.

In order to achieve the above object, the invention according to claim 1 is characterized in that the chamber (4), the substrate holding means (5) for horizontally holding the substrate (W) in the chamber, and the substrate holding means are held. A facing member (6) including a facing surface (16) facing the upper surface of the substrate, a facing member lifting / lowering means for lifting and lowering the facing member between an upper position and a lower position, and the facing member disposed at the upper position A discharge member disposed around the counter member when being supplied, and supplying the gas discharged from the discharge member between the substrate and the counter member so that the counter member is in the upper position. An airflow forming member (45, 345, 645, 255, 455, which forms an airflow that flows inward toward the center of the substrate in a plan view when disposed between the upper surface of the substrate and the opposing surface. 555) A substrate processing apparatus (1,201,301,401,501,601). The airflow forming member may include a gas outlet that surrounds the opposing member. In this case, the gas discharge port includes at least one of a plurality of discharge ports arranged at intervals in the circumferential direction of the facing member, and an annular discharge port continuous over the entire circumference so as to surround the facing member. May be included.

  According to this configuration, the gas from the airflow forming member is supplied between the substrate that is horizontally held in the chamber by the substrate holding means and the facing member that includes the facing surface that faces the upper surface of the substrate. Thereby, an airflow is formed between the upper surface of the substrate and the opposing surface of the opposing member. Therefore, even if a contaminated atmosphere (an atmosphere containing chemicals or particles) that contaminates the substrate exists between the substrate and the opposing member, the replacement of the contaminated atmosphere is promoted, and the retention of the contaminated atmosphere is suppressed or prevented. The Therefore, contamination of the substrate due to contact with the contaminated atmosphere is reduced. Thereby, the cleanliness of the substrate can be increased.

The invention according to claim 2 further includes a downflow forming member (46) that discharges a gas downward around the airflow forming member to form a downflow in the chamber. A substrate processing apparatus.
According to this configuration, the downflow forming member discharges gas downward around the airflow forming member. Thereby, a downward flow is formed in the chamber. Therefore, it is possible to suppress or prevent the contamination atmosphere from staying in the chamber.

The invention according to claim 3 is the substrate processing apparatus according to claim 2, further comprising a support member (19) which is disposed outside the chamber and supports the opposing member.
According to this configuration, since the support member that supports the opposing member is disposed outside the chamber, the gas from the airflow forming member and the gas from the downflow forming member do not collide with the support member. Therefore, it can prevent that a turbulent flow generate | occur | produces in a chamber by the collision with gas and a supporting member. Thereby, the residence of the atmosphere in a chamber can be suppressed or prevented.

A fourth aspect of the present invention is the substrate processing apparatus according to the second or third aspect, further comprising a blowing means (51) for sending gas to the airflow forming member and the downflow forming member.
According to this configuration, since the gas from the common blower is supplied to the airflow forming member and the downflow forming member, the apparatus configuration is more than the case where a blower is provided for each of the airflow forming member and the downflow forming member. Can be suppressed or prevented.

The invention according to claim 5 is any one of claims 1 to 4, wherein the discharge member includes an inward discharge portion (47, 49) for horizontally discharging gas from the periphery of the counter member toward the counter member. The substrate processing apparatus according to claim 1.
According to this configuration, the inward discharge unit horizontally discharges gas from the periphery of the opposing member toward the opposing member, so that an airflow that flows horizontally toward the opposing member is formed. Thereby, gas is supplied between a board | substrate and an opposing member, and substitution of the atmosphere between a board | substrate and an opposing member is accelerated | stimulated.

According to a sixth aspect of the present invention, at least a part of the inward discharge portion is disposed at a height between the substrate and the facing member when the facing member is disposed at an upper position . The substrate processing apparatus according to claim 5.
According to this configuration, since at least a part of the inward discharge portion is disposed below the facing member, gas is discharged horizontally toward the lower side of the facing member. Thereby, gas is reliably supplied between a board | substrate and an opposing member. Therefore, the replacement of the atmosphere between the substrate and the opposing member is further promoted.

In the invention according to claim 7, the discharge member discharges gas downward and above the inward discharge portion, and causes the gas discharged to collide with the gas discharged by the inward discharge portion ( 48) The substrate processing apparatus according to claim 5, further comprising: 48).
According to this configuration, the gas discharged downward from the downward discharge portion collides with the gas discharged horizontally from the inward discharge portion. Therefore, the direction of the airflow that flows horizontally toward the facing member side is changed, and an airflow that flows obliquely downward toward the facing member side is formed. Thereby, gas is reliably supplied between a board | substrate and an opposing member, and substitution of the atmosphere between a board | substrate and an opposing member is further accelerated | stimulated.

The invention according to claim 8 is any one of claims 1 to 6, wherein the discharge member includes an obliquely downward discharge portion (658) for discharging gas obliquely downward from the periphery of the counter member toward the counter member. The substrate processing apparatus according to one item.
According to this configuration, the obliquely downward discharge portion discharges gas obliquely downward from the periphery of the opposing member toward the opposing member, so that an airflow that flows obliquely downward toward the opposing member is formed. Thereby, gas is reliably supplied between a board | substrate and an opposing member, and substitution of the atmosphere between a board | substrate and an opposing member is further accelerated | stimulated.

The invention according to claim 9, wherein the air flow forming member is guided between the substrate and the counter member when the gas discharged from the discharge member is the counter member arranged on the upper position guide The substrate processing apparatus according to claim 1 , further comprising (255, 455, 555).
According to this configuration, the gas discharged around the counter member by the discharge member is guided between the substrate and the counter member by the guide. Thereby, gas is reliably supplied between a board | substrate and an opposing member, and substitution of the atmosphere between a board | substrate and an opposing member is further accelerated | stimulated.

According to the tenth aspect of the present invention, the holding step of holding the substrate horizontally in the chamber by the substrate holding means, and the holding member while raising and lowering the opposing member that can be moved up and down between the upper position and the lower position are performed. step in parallel with, and facing step of facing the opposing surface of the opposing member on the upper surface of the substrate, a process to be executed in parallel with the facing step, the counter member is disposed at the upper position by supplying a gas discharged from the discharge member of the airflow member disposed around the opposing member between the opposing member and the substrate when, when the opposing member is positioned at the upper position And an airflow forming step of forming an airflow flowing inward toward the center of the substrate in plan view between the upper surface of the substrate and the opposing surface. According to this method, an effect similar to the effect described in regard to the invention of claim 1 can be obtained.

  In this section, alphanumeric characters in parentheses represent reference numerals of corresponding components in the embodiments described later, but the scope of the claims is not limited by these reference numerals.

It is a longitudinal cross-sectional view of the processing unit with which the substrate processing apparatus which concerns on 1st Embodiment of this invention was equipped. It is a longitudinal cross-sectional view of the processing unit with which the substrate processing apparatus which concerns on 1st Embodiment of this invention was equipped. It is a cross-sectional view of the processing unit provided in the substrate processing apparatus according to the first embodiment of the present invention. It is a longitudinal cross-sectional view for demonstrating the flow of the gas in a chamber. It is a graph which shows the density | concentration of ammonia between a board | substrate and a shielding board. It is a longitudinal cross-sectional view of the process unit with which the substrate processing apparatus which concerns on 2nd Embodiment of this invention was equipped. It is a longitudinal cross-sectional view of the processing unit with which the substrate processing apparatus which concerns on 3rd Embodiment of this invention was equipped. It is a longitudinal cross-sectional view of the process unit with which the substrate processing apparatus which concerns on 4th Embodiment of this invention was equipped. It is a longitudinal cross-sectional view of the process unit with which the substrate processing apparatus which concerns on 5th Embodiment of this invention was equipped. It is a longitudinal cross-sectional view of the process unit with which the substrate processing apparatus which concerns on 6th Embodiment of this invention was equipped.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 and 2 are longitudinal sectional views of a processing unit 2 provided in the substrate processing apparatus 1 according to the first embodiment of the present invention. FIG. 3 is a cross-sectional view of the processing unit 2 provided in the substrate processing apparatus 1 according to the first embodiment of the present invention. FIG. 1 shows a cross section taken along line II shown in FIG. 3, and FIG. 2 shows a cross section taken along line II-II shown in FIG.

As shown in FIG. 1, the substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a single wafer processing unit 2 that processes the substrate W, and a control device 3 that controls the operation of the apparatus provided in the substrate processing apparatus 1 and the opening and closing of valves.
As shown in FIG. 1, the processing unit 2 includes a chamber 4 whose inside is sealed, and a spin chuck that holds the substrate W horizontally in the chamber 4 and rotates it around a vertical rotation axis A <b> 1 passing through the center of the substrate W. 5, a plurality of nozzles for discharging the processing liquid toward the substrate W held by the spin chuck 5, a blocking plate 6 disposed in the chamber 4 above the spin chuck 5, and the spin chuck in the chamber 4 And a cup 7 surrounding 5. The plurality of nozzles are a scan nozzle 8 that discharges the processing liquid toward the upper surface of the substrate W, a lower surface nozzle 9 that discharges the processing liquid toward the lower surface central portion of the substrate W, and the upper surface of the substrate W. And a central axis nozzle 10 for discharging the processing liquid.

  As shown in FIG. 1, the spin chuck 5 includes a disk-shaped spin base 11 that holds the substrate W horizontally, a plurality of chuck pins 12 disposed on the spin base 11, and a rotation axis A <b> 1. And a spin motor 13 that rotates around. The spin chuck 5 horizontally holds the substrate W above the spin base 11 by a plurality of chuck pins 12. The spin chuck 5 is not limited to the clamping chuck, and may be a vacuum chuck that holds the substrate W horizontally by sucking the back surface (lower surface) of the substrate W that is a non-device forming surface. The spin chuck 5 rotates the spin base 11 around the rotation axis A <b> 1 by the spin motor 13 while holding the substrate W. As a result, the substrate W rotates around the rotation axis A1. The upper end portion of the lower surface nozzle 9 is disposed between the upper surface of the spin base 11 and the lower surface of the substrate W. The discharge port of the lower surface nozzle 9 faces the center of the lower surface of the substrate W. The processing liquid discharged upward from the discharge port of the lower surface nozzle 9 is supplied to the center of the lower surface of the substrate W.

  As shown in FIG. 1, the scan nozzle 8 is held by a horizontally extending nozzle arm 14 with the discharge port facing downward. An end of the nozzle arm 14 is connected to a nozzle moving mechanism 15 disposed around the spin chuck 5. The nozzle moving mechanism 15 rotates the nozzle arm 14 around a vertical rotation axis A2 provided around the spin chuck 5. When the nozzle moving mechanism 15 rotates the nozzle arm 14 about the rotation axis A2, the scan nozzle 8 also rotates about the rotation axis A2. Thereby, the scan nozzle 8 moves horizontally. As shown in FIG. 3, the nozzle moving mechanism 15 moves the scan nozzle 8 horizontally along an arcuate locus X1 passing through the center of the substrate W in plan view. Accordingly, the scan nozzle 8 moves in a horizontal plane including the upper side of the spin chuck 5.

  When the scan nozzle 8 is not used, the control device 3 controls the nozzle moving mechanism 15 to make the scan nozzle 8 stand by around the spin chuck 5. When the scan nozzle 8 is used, the control device 3 controls the nozzle moving mechanism 15 to move the scan nozzle 8 above the substrate W. At this time, the control device 3 discharges the processing liquid downward from the scan nozzle 8 and rotates the substrate W by the spin chuck 5 while moving the scan nozzle 8 above the substrate W by the arc-shaped locus while rotating the substrate W by the spin chuck 5. Move horizontally along X1. The processing liquid supplied to the substrate W spreads outward on the substrate W due to the centrifugal force generated by the rotation of the substrate W. Further, the processing liquid landing position scans the entire upper surface of the substrate W by the movement of the scan nozzle 8 and the rotation of the substrate W. Therefore, the processing liquid is supplied uniformly over the entire upper surface of the substrate W.

  As shown in FIG. 1, the blocking plate 6 is a disk-shaped plate having a diameter larger than that of the substrate W. The blocking plate 6 is supported in a horizontal posture so that the central axis of the blocking plate 6 is positioned on the rotation axis A1. The blocking plate 6 includes a facing surface 16 (lower surface) that faces the upper surface of the substrate W. The blocking plate 6 is connected to a rotating shaft 17 that extends upward from the center of the upper surface of the blocking plate 6. The rotating shaft 17 has a cylindrical shape extending in the vertical direction along the rotating axis A1. The center axis nozzle 10 is inserted into the rotating shaft 17 in a non-contact state. The central axis nozzle 10 extends in the vertical direction along the rotation axis A <b> 1 within the rotation shaft 17. The central axis nozzle 10 is disposed above the spin chuck 5. The discharge port of the central shaft nozzle 10 is disposed in a through hole that vertically penetrates the central portion of the blocking plate 6. The processing liquid discharged downward from the discharge port of the central axis nozzle 10 passes through an opening provided in the central portion of the lower surface of the blocking plate 6 and is then supplied to the central portion of the upper surface of the substrate W.

  As shown in FIG. 1, the blocking plate 6 is connected to a blocking plate rotating mechanism 18 via a rotating shaft 17. The shield plate rotation mechanism 18 rotates the rotation shaft 17 around the rotation axis A1. When the blocking plate rotating mechanism 18 rotates the rotating shaft 17, the blocking plate 6 also rotates around the rotation axis A1. The blocking plate 6, the rotating shaft 17, the central shaft nozzle 10, and the blocking plate rotating mechanism 18 are supported by a support arm 19 disposed outside the chamber 4. The support arm 19 is connected to a blocking plate lifting mechanism 20 that moves the support arm 19 up and down. When the shield plate lifting mechanism 20 lifts and lowers the support arm 19, the rotary shaft 17 and the shield plate rotating mechanism 18 are lifted and lowered together with the support arm 19. Thereby, the blocking plate 6 moves up and down in the chamber 4.

  As shown in FIGS. 1 and 2, the blocking plate rotating mechanism 18 moves the blocking plate 6 in parallel between a lower position (position shown in FIG. 2) and an upper position (position shown in FIG. 1). The lower position and the upper position are both positions within the chamber 4. The lower position is a position where the facing surface 16 of the blocking plate 6 is close to the upper surface of the substrate W to such a height that the scan nozzle 8 cannot enter between the substrate W and the blocking plate 6. The upper position is a position where the blocking plate 6 is retracted upward to a height at which the scan nozzle 8 can enter between the substrate W and the blocking plate 6. The blocking plate lifting mechanism 20 can hold the blocking plate 6 at an arbitrary position between the lower position and the upper position. When the blocking plate elevating mechanism 20 raises and lowers the support arm 19, the support arm 19 enters and exits a through hole provided in the upper wall 36 of the chamber 4. A gap between the upper wall 36 of the chamber 4 and the blocking plate 6 is closed by a cylindrical bellows 21 that expands and contracts vertically as the blocking plate 6 moves up and down. Thereby, the atmosphere in the chamber 4 is blocked so as not to flow outside.

  As shown in FIG. 1, the cup 7 includes a cylindrical outer wall 22 that surrounds the spin chuck 5, a plurality of treatment liquid cups 23 to 25 disposed between the spin chuck 5 and the outer wall 22, and the periphery of the substrate W. A plurality of guards 26 to 28 that receive the processing liquid scattered on the surface and a guard lifting mechanism (not shown) that lifts and lowers the individual guards 26 to 28 independently. FIG. 1 shows a state in which the outermost third guard 28 is disposed at the upper position, and the first guard 26 and the second guard 27 are disposed at the lower position. FIG. 2 shows a state in which all the guards 26 to 28 are arranged at the lower position.

  As shown in FIG. 1, each of the treatment liquid cups 23 to 25 has a cylindrical shape and surrounds the spin chuck 5 between the spin chuck 5 and the outer wall 22. The second processing liquid cup 24 that is second from the inside is disposed outside the first processing liquid cup 23, and the third processing liquid cup 25 is disposed outside the second processing liquid cup 24. ing. For example, the third processing liquid cup 25 is integrated with the second guard 27 and moves up and down together with the second guard 27. Each of the treatment liquid cups 23 to 25 forms an annular groove that opens upward. The processing liquid guided to the processing liquid cups 23 to 25 is sent to a recovery unit or a waste liquid unit (not shown) through this groove. As a result, the processing liquid discharged from the substrate W is collected or discarded.

  As shown in FIG. 1, each of the guards 26 to 28 has a cylindrical shape and surrounds the spin chuck 5 between the spin chuck 5 and the outer wall 22. Each of the guards 26 to 28 includes a cylindrical inclined portion 29 that extends obliquely upward toward the rotation axis A <b> 1 and a cylindrical guide portion 30 that extends downward from the lower end of the inclined portion 29. The upper end portion of each inclined portion 29 constitutes the inner peripheral portion of the guards 26 to 28 and has a larger diameter than the substrate W and the spin base 11. The three inclined portions 29 are stacked one above the other, and the three guide portions 30 are arranged coaxially. The three guide portions 30 can enter and exit from the three treatment liquid cups 23 to 25, respectively. That is, the cup 7 is foldable, and the cup 7 is expanded and folded by raising and lowering at least one of the three guards 26 to 28 by the guard lifting mechanism.

  As shown in FIGS. 1 and 2, the guard elevating mechanism includes each guard between an upper position where the upper end of the guard is located above the substrate W and a lower position where the upper end of the guard is located below the substrate W. 26-28 are moved up and down. The guard lifting mechanism can hold each of the guards 26 to 28 at an arbitrary position between the upper position and the lower position. The supply of the processing liquid to the substrate W and the drying of the substrate W are performed in a state where any one of the guards 26 to 28 faces the peripheral end surface of the substrate W. For example, when the second guard 27 second from the inside is opposed to the peripheral end surface of the substrate W, the first guard 26 is disposed at the lower position, and the second guard 27 and the third guard 28 are disposed at the upper position. . When the outermost third guard 28 is opposed to the peripheral end surface of the substrate W, the third guard 28 is disposed at the upper position (position shown in FIG. 1), and the first guard 26 and the second guard 27 are It arrange | positions in a lower position (position shown in FIG. 1).

  The supply of the processing liquid from the scan nozzle 8 to the substrate W is performed in a state where the blocking plate 6 is disposed at the upper position and any one of the three guards 26 to 28 faces the peripheral end surface of the substrate W. Done. Therefore, any of the processing liquids scattered around the substrate W when the processing liquid is supplied to the substrate W is caused by any of the first guard 26, the second guard 27, and the third guard 28. Guided to cups 23-25. The substrate W is dried in a state where the blocking plate 6 is disposed at the lower position and any one of the three guards 26 to 28 faces the peripheral end surface of the substrate W. Accordingly, the processing liquid scattered around the substrate W due to the high-speed rotation of the substrate W is guided to any of the processing liquid cups 23 to 25 by any one of the first guard 26, the second guard 27, and the third guard 28. Is done. In this way, the processing liquid scattered around the substrate W is received by any of the guards 26 to 28. For this reason, the dispersion range of the processing liquid in the chamber 4 is narrowed.

  As shown in FIG. 3, the chamber 4 includes a cylindrical portion 31 that surrounds the spin chuck 5 and the cup 7 in a plan view, and a protruding portion 32 that protrudes outward from the outer peripheral surface of the cylindrical portion 31. The inside of the overhang portion 32 (nozzle retreat space S1) communicates with the inside of the cylindrical portion 31. The retreat position of the scan nozzle 8 is set in the overhang portion 32. The cylindrical portion 31 includes a cylindrical wall 34 formed with a loading / unloading port 33 through which a hand of a transfer robot that transfers the substrate W enters and leaves, and a shutter 35 that opens and closes the loading / unloading port 33. Further, as shown in FIG. 1, the cylindrical portion 31 includes an upper wall 36 that forms the ceiling portion of the cylindrical portion 31, a lower wall 37 that forms the bottom portion of the cylindrical portion 31, and the cylindrical portion 31 around the cup 7. A partition plate 38 that divides the inside up and down and a diffusion plate 39 that partitions the inside of the cylindrical portion 31 above the spin chuck 5 are included.

  As shown in FIG. 1, the partition plate 38 partitions the inside of the cylindrical portion 31 into an upper space S <b> 2 above the partition plate 38 and a lower space S <b> 3 below the partition plate 38. The partition plate 38 is disposed around the upper end portion of the outer wall 22. As shown in FIG. 3, the partition plate 38 is constituted by a plurality of divided plates 40 arranged around the cup 7. Each divided plate 40 is fixed to the cylindrical wall 34 and the outer wall 22 by bolts 41. The some division board 40 is arrange | positioned at intervals in the circumferential direction. Each divided plate 40 has a circular arc shape in plan view. The inner end of the dividing plate 40 has an arc shape along the outer peripheral surface of the outer wall 22, and the outer end portion of the dividing portion has an arc shape along the inner peripheral surface of the cylindrical wall 34. The inner end portion of the dividing plate 40 is opposed to the outer peripheral surface of the outer wall 22 with a space in the radial direction, and the outer end portion of the dividing portion is formed on the inner peripheral surface of the cylindrical wall 34 with a space in the radial direction. Opposite. Therefore, the upper space S2 includes a gap between the two divided plates 40 adjacent in the circumferential direction, a gap between the cup 7 and the divided plate 40, and a gap between the cylindrical wall 34 and the divided plate 40. And communicates with the lower space S3.

  As shown in FIG. 1, the processing unit 2 includes an exhaust duct 42 (see a bold two-dot chain line) that guides the gas in the chamber 4 to the outside of the chamber 4. The upstream end of the exhaust duct 42 is connected to the bottom of the cup 7 (the lower end of the outer wall 22), and the downstream end of the exhaust duct 42 is connected to an exhaust device (not shown). The inside of the exhaust duct 42 communicates with the inside of the cup 7. The exhaust duct 42 is disposed around the cup 7. The exhaust duct 42 passes through the space below the partition plate 38 (lower space S3) and the inside of the overhanging portion 32 (nozzle retracting space S1). The exhaust duct 42 includes an upstream exhaust port 43 that opens in the lower space S <b> 3 and a downstream exhaust port 44 that opens in the overhang portion 32. Therefore, the inside of the exhaust duct 42 communicates not only with the inside of the cup 7 but also with the lower space S3 and the nozzle retracting space S1.

  Since the exhaust duct 42 is connected to the bottom of the cup 7, when the inside of the exhaust duct 42 is sucked by the exhaust device, the gas in the cup 7 is discharged through the exhaust duct 42. Therefore, the gas above the cup 7 is sucked into the cup 7 and discharged through the exhaust duct 42. Furthermore, since the inside of the exhaust duct 42 communicates with the lower space S3 and the nozzle retracting space S1, when the interior of the exhaust duct 42 is sucked by the exhaust device, the interior of the lower space S3 and the nozzle retracting space S1 The gas is also discharged through the exhaust duct 42. As described above, the space above the partition plate 38 (upper space S2) communicates with the lower space S3 through a plurality of gaps. Therefore, when the inside of the exhaust duct 42 is sucked by the exhaust device, the gas in the upper space S2 is sucked into the lower space S3 and discharged through the exhaust duct 42.

  As shown in FIG. 1, the diffusion plate 39 includes a cylindrical member 45 that surrounds a vertical axis (rotation axis A <b> 1), and an annular member 46 that extends outward from the lower end of the cylindrical member 45. The cylindrical member 45 and the annular member 46 are disposed below the upper wall 36. The upper end portion of the cylindrical member 45 is connected to the upper wall 36, and the outer peripheral portion of the annular member 46 is connected to the cylindrical portion 31. The cylindrical member 45 may be constituted by a plurality of members or may be constituted by an integral member. The same applies to the annular member 46. Further, at least a part of the cylindrical member 45 may be integrated with at least a part of the annular member 46.

  As shown in FIG. 1, the inner peripheral portion of the annular member 46 is disposed along the lower end portion of the tubular member 45. The outer end portion of the annular member 46 is disposed along the inner peripheral surface of the cylindrical wall 34. The annular member 46 and the upper wall 36 are opposed to each other with an interval in the vertical direction. The annular member 46 partitions the inside of the cylindrical portion 31 vertically. The annular member 46 is disposed on the same plane as the blocking plate 6 located at the upper position, that is, the blocking plate 6 in the retracted state. If the effect mentioned later is acquired, the annular member 46 may be arrange | positioned rather than the interruption | blocking board 6 of the retracted state. The upper wall 36, the cylindrical member 45, and the annular member 46 define an annular diffusion space S4 that diffuses clean air.

  As shown in FIG. 1, the cylindrical member 45 includes a cylindrical small-diameter portion 47 that surrounds the rotation axis A <b> 1, an annular horizontal portion 48 that extends outward from the lower end portion of the small-diameter portion 47, and an outer peripheral portion of the horizontal portion 48. And a cylindrical large-diameter portion 49 extending downward. The upper end portion of the small diameter portion 47 is connected to the upper wall 36 of the cylindrical portion 31, and the lower end portion of the small diameter portion 47 is connected to the inner peripheral portion of the horizontal portion 48. The upper end portion of the large diameter portion 49 is connected to the outer peripheral portion of the horizontal portion 48, and the lower end portion of the large diameter portion 49 is connected to the inner peripheral portion of the annular member 46. The small diameter portion 47, the horizontal portion 48, and the large diameter portion 49 are arranged coaxially.

  As shown in FIG. 1, the inner diameter of the small diameter portion 47 is larger than the outer diameter of the blocking plate 6, and the inner diameter of the large diameter portion 49 is larger than the inner diameter of the small diameter portion 47. Therefore, the inner diameter of the cylindrical member 45 increases stepwise as it approaches the lower end of the cylindrical member 45. The inner diameter of the large-diameter portion 49 is larger than the outer diameter of the spin chuck 5 and smaller than the outer diameter of the cup 7. The small-diameter portion 47 surrounds the bellows 21 that surrounds the rotating shaft 17, and the large-diameter portion 49 surrounds the shield plate 6 in the retracted state. The cylindrical member 45 defines a columnar blocking plate retracting space S5 that accommodates the retracted blocking plate 6.

  As shown in FIG. 2, the processing unit 2 includes two intake ducts 50 that guide the air (clean air) filtered by the filter from the outside of the chamber 4 into the chamber 4, and the clean air that is supplied to the two intake ducts 50. The fan filter unit 51 (hereinafter referred to as “FFU 51”) as a blower to be sent to the fan. The intake duct 50 and the FFU 51 are disposed outside the chamber 4. The upstream ends of the intake ducts 50 are connected to the FFU 51, and the downstream ends of the intake ducts 50 are connected to the upper wall 36 of the cylindrical portion 31 at different positions. The upper wall 36 includes two intake ports 52 that penetrate the upper wall 36 in the vertical direction. Each of the two intake ducts 50 is connected to two intake ports 52. The two air inlets 52 are disposed above the annular member 46. Therefore, the inside of the intake duct 50 communicates with the diffusion space S4 via the intake port 52. Therefore, the clean air sent by the FFU 51 is supplied to the diffusion space S4 through the two intake ducts 50.

FIG. 4 is a longitudinal sectional view for explaining the gas flow in the chamber 4. Thick line arrows shown in FIG. 4 indicate the direction of airflow. FIG. 5 is a graph showing the ammonia concentration between the substrate W and the blocking plate 6. Each measured value in FIG. 5 indicates the concentration of ammonia between the substrate W coated with ammonia water over the entire upper surface and the blocking plate 6.
Example 1 is a measurement value in the processing unit 2 according to the first embodiment, Example 2 is a measurement value in the processing unit 202 according to the second embodiment described later, and Example 3 is described later. It is a measured value in the processing unit 302 according to the third embodiment. Comparative Example 1 is a measurement value when the blocking plate 6 is arranged at the same height as the annular member 46 in the processing unit 302 according to the third embodiment. Except for Comparative Example 1, the concentration was measured in a state where the blocking plate 6 was disposed at the upper position. Further, the concentration was measured while supplying clean air into the chamber 4 and evacuating the chamber 4 and holding the substrate W on the spin chuck 5 in a non-rotating state.

For supplying the processing liquid to the substrate W and drying the substrate W, clean air from the FFU 51 is supplied from the upper part of the chamber 4 into the chamber 4, and the gas in the chamber 4 is discharged from the lower part of the chamber 4. Done in state. Therefore, these processes (liquid process and drying process) are performed in a state where an air flow is formed in the chamber 4.
As shown in FIG. 4, the clean air sent from the FFU 51 to the two intake ducts 50 is discharged downward from the two intake ports 52 opened at the upper wall 36 of the chamber 4. The clean air discharged from the intake port 52 collides with the annular member 46 and is guided in the circumferential direction of the diffusion space S4 by the upper wall 36, the cylindrical member 45, and the annular member 46. Thereby, clean air diffuses in diffusion space S4.

  As shown in FIG. 4, at least a part of the annular member 46 is configured by a perforated plate (so-called punching plate) in which a large number of through holes are formed over the entire area. The annular member 46 includes a plurality of discharge ports 53 that penetrate the annular member 46 in the thickness direction. The discharge port 53 may be a circular or elliptical hole, or may be a band-shaped or linear hole. The plurality of discharge ports 53 are formed in the entire area of the annular member 46. Accordingly, the clean air that diffuses in the diffusion space S4 is discharged downward from the plurality of discharge ports 53. Thereby, clean air diffuses in the space below the annular member 46. The clean air discharged from the discharge port 53 is discharged from the chamber 4 through the exhaust duct 42 (see FIG. 1). Therefore, an annular downward flow (downflow) that flows downward from the annular member 46 is formed outside the blocking plate 6 by clean air.

  As shown in FIG. 4, at least a part of the cylindrical member 45 is configured by a perforated plate, like the annular member 46. The tubular member 45 includes a plurality of discharge ports 54 that penetrate the tubular member 45 in the thickness direction. The discharge port 54 may be a circular or elliptical hole, or may be a band-shaped or linear hole. The plurality of discharge ports 54 are arranged at intervals in the circumferential direction and the vertical direction. These discharge ports 54 are formed in the entire area of the cylindrical member 45. Accordingly, each of the small diameter portion 47, the horizontal portion 48, and the large diameter portion 49 has a plurality of discharge ports 54. Clean air diffused in the diffusion space S4 is discharged horizontally from the plurality of discharge ports 54 of the small diameter portion 47 and the large diameter portion 49 toward the blocking plate 6. Further, the clean air that diffuses in the diffusion space S4 is discharged downward from the plurality of discharge ports 54 of the horizontal portion 48. Therefore, the clean air diffuses in the shielding plate retracting space S5, and the shielding plate retracting space S5 is filled with clean air.

  As shown in FIG. 4, the large diameter portion 49 surrounds the shield plate 6 in the retracted state. Clean air discharged from the plurality of discharge ports 54 of the large-diameter portion 49 forms an annular airflow that flows from the periphery of the blocking plate 6 toward the blocking plate 6. The clean air discharged from the plurality of discharge ports 54 of the horizontal portion 48 forms an annular airflow that flows downward. The horizontal portion 48 is disposed above the large diameter portion 49 at a height higher than the large diameter portion 49. Therefore, the clean air discharged downward from the horizontal portion 48 collides with the clean air discharged horizontally from the large diameter portion 49 and changes the direction of the airflow flowing horizontally. Therefore, an annular airflow that flows obliquely downward toward the blocking plate 6 side is formed, and clean air discharged from the cylindrical member 45 flows between the substrate W and the blocking plate 6.

  As shown in FIG. 4, the clean air that flows between the substrate W and the shielding plate 6 flows downward between the substrate W and the shielding plate 6. The clean air that has reached the vicinity of the upper surface of the substrate W flows outward along the upper surface of the substrate W and is sucked into the cup 7. Therefore, a downward flow is formed not only outside the blocking plate 6 but also between the substrate W and the blocking plate 6. Therefore, even if a contaminated atmosphere (atmosphere containing chemicals or particles) that contaminates the substrate W is generated between the substrate W and the shielding plate 6 when the shielding plate 6 is disposed at the upper position, this contamination is caused. The atmosphere is discharged from between the substrate W and the shielding plate 6. Thereby, the stay of the contaminated atmosphere between the substrate W and the blocking plate 6 is suppressed or prevented. Specifically, as shown in Example 1 in FIG. 5, the ammonia concentration between the substrate W and the blocking plate 6 is significantly lower than that in the comparative example. Therefore, contamination of the substrate W due to contact with the contaminated atmosphere can be reduced.

  As described above, in the first embodiment, the clean air that has passed through the diffusion plate 39 is supplied between the substrate W and the blocking plate 6. Thereby, an air flow is formed between the upper surface of the substrate W and the facing surface 16 of the blocking plate 6. Therefore, even if a contaminated atmosphere that contaminates the substrate W exists between the substrate W and the blocking plate 6, the replacement of the contaminated atmosphere is promoted, and the stay of the contaminated atmosphere is suppressed or prevented. Therefore, contamination of the substrate W due to contact with the contaminated atmosphere is reduced. Thereby, the cleanliness of the substrate W can be increased.

Second Embodiment FIG. 6 is a longitudinal sectional view of a processing unit 202 provided in a substrate processing apparatus 201 according to a second embodiment of the present invention. The thick line arrows shown in FIG. 6 indicate the direction of airflow. In FIG. 6, the same components as those shown in FIGS. 1 to 5 described above are denoted by the same reference numerals as those in FIG. 1 and the description thereof is omitted.

The processing unit 202 according to the second embodiment has the same configuration as the processing unit 2 according to the first embodiment. In other words, in addition to the configuration of the processing unit 2 according to the first embodiment, the processing unit 202 according to the second embodiment uses clean air discharged from the tubular member 45 to face the upper surface of the substrate W and the blocking plate 6. 16 (lower surface) is included.
The guide 255 extends downward from the horizontal portion 48. The guide 255 surrounds the retracted blocking plate 6. The guide 255 may be configured by an integrated member that is continuous over the entire circumference, or may be configured by a plurality of members that are divided in the circumferential direction. The guide 255 includes a block portion 256 having a triangular longitudinal cross section (a cross section when cut along a vertical plane) whose width decreases as it approaches the lower end, and a lip portion 257 that extends downward from the lower end portion of the block portion 256. The lip portion 257 is disposed between the block portion 256 and the blocking plate 6 in the horizontal direction. At least a part of the lip portion 257 is disposed below the blocking plate 6 in the retracted state. The lip portion 257 is inclined obliquely downward toward the blocking plate 6 side. The inclination angle θ of the lip portion 257 with respect to the facing surface 16 is, for example, 45 degrees or less.

  The clean air sent from the FFU 51 to the diffusion space S4 is discharged from the tubular member 45 into the shielding plate retracting space S5. Clean air discharged from the small-diameter portion 47 flows downward between the bellows 21 and the cylindrical member 45 and is guided obliquely between the substrate W and the blocking plate 6 by the guide 255. Further, the clean air discharged from the large diameter portion 49 is guided obliquely between the substrate W and the blocking plate 6 by the guide 255. Therefore, an annular airflow that flows obliquely downward toward the blocking plate 6 side is formed between the substrate W and the blocking plate 6. The clean air supplied between the substrate W and the blocking plate 6 is sucked into the cup 7 by the suction force from the exhaust device. Thereby, a downward flow is formed between the substrate W and the shielding plate 6, and the stay of the contaminated atmosphere between the substrate W and the shielding plate 6 is suppressed or prevented. Specifically, as shown in Example 2 in FIG. 5, the ammonia concentration between the substrate W and the blocking plate 6 is significantly lower than that in the comparative example. Therefore, contamination of the substrate W due to contact with the contaminated atmosphere can be reduced.

Third Embodiment FIG. 7 is a longitudinal sectional view of a processing unit 302 provided in a substrate processing apparatus 301 according to a third embodiment of the present invention. Thick line arrows shown in FIG. 7 indicate the direction of airflow. In FIG. 7, the same components as those shown in FIGS. 1 to 6 are given the same reference numerals as those in FIG. 1 and the description thereof is omitted.

The processing unit 302 according to the third embodiment has the same configuration as the processing unit 2 according to the first embodiment, except for the cylindrical member. That is, the processing unit 2 according to the third embodiment includes a tubular member 345 instead of the tubular member 45 according to the first embodiment.
In the tubular member 345 according to the third embodiment, the horizontal portion 48 and the large diameter portion 49 are not provided in the tubular member 345, and the lower end portion of the small diameter portion 47 is connected to the inner peripheral portion of the annular member 46. ing. The upper position of the blocking plate 6 is set to a height above the lower end of the small diameter portion 47. Therefore, the lower portion of the small diameter portion 47 is disposed below the retracted blocking plate 6. Therefore, clean air is discharged from the lower portion of the small diameter portion 47 toward the lower side of the blocking plate 6, and the clean air discharged from the lower portion of the small diameter portion 47 is directly supplied between the substrate W and the blocking plate 6. The clean air supplied between the substrate W and the blocking plate 6 is sucked into the cup 7 by the suction force from the exhaust device. Thereby, a downward flow is formed between the substrate W and the shielding plate 6, and the stay of the contaminated atmosphere between the substrate W and the shielding plate 6 is suppressed or prevented. Specifically, as shown in Example 3 in FIG. 5, the ammonia concentration between the substrate W and the blocking plate 6 is significantly lower than that in the comparative example. Therefore, contamination of the substrate W due to contact with the contaminated atmosphere can be reduced.

Fourth Embodiment FIG. 8 is a longitudinal sectional view of a processing unit 402 provided in a substrate processing apparatus 401 according to a fourth embodiment of the present invention. The bold arrows shown in FIG. 8 indicate the direction of airflow. 8, the same components as those shown in FIGS. 1 to 7 are given the same reference numerals as those in FIG. 1 and the description thereof is omitted.

The processing unit 402 according to the fourth embodiment has the same configuration as the processing unit 2 according to the first embodiment. That is, in addition to the configuration of the processing unit 2 according to the first embodiment, the processing unit 402 according to the fourth embodiment removes clean air discharged from the cylindrical member 45 from the upper surface of the substrate W and the opposing surface of the shielding plate 6. 16 (lower surface) is included.
The guide 455 is an annular plate that extends obliquely downward from the corner formed by the horizontal portion 48 and the large diameter portion 49 toward the blocking plate 6 side. The guide 455 surrounds the shield plate 6 in the retracted state. The guide 455 may be constituted by an integral member continuous over the entire circumference, or may be constituted by a plurality of members divided in the circumferential direction. An inner peripheral end (corresponding to a lower end) of the guide 455 is disposed outside the blocking plate 6. Further, the inner peripheral end of the guide 455 is disposed below the retracted blocking plate 6. The upper position of the blocking plate 6 may be set to a height between the upper end and the lower end of the guide 455, or may be set to a height above the guide 455. The inclination angle θ of the guide 455 with respect to the facing surface 16 is, for example, 45 degrees or less.

  The clean air sent from the FFU 51 to the diffusion space S4 is discharged from the tubular member 45 into the shielding plate retracting space S5. Clean air discharged from the small diameter portion 47 and the horizontal portion 48 is guided obliquely between the substrate W and the blocking plate 6 by the guide 455. Further, the clean air discharged from the large diameter portion 49 is guided obliquely between the substrate W and the blocking plate 6 by the guide 455. Therefore, an annular airflow that flows obliquely downward toward the blocking plate 6 side is formed between the substrate W and the blocking plate 6. The clean air supplied between the substrate W and the blocking plate 6 is sucked into the cup 7 by the suction force from the exhaust device. Thereby, a downward flow is formed between the substrate W and the shielding plate 6, and the stay of the contaminated atmosphere between the substrate W and the shielding plate 6 is suppressed or prevented. Therefore, contamination of the substrate W due to contact with the contaminated atmosphere can be reduced.

Fifth Embodiment FIG. 9 is a longitudinal sectional view of a processing unit 502 provided in a substrate processing apparatus 501 according to a fifth embodiment of the present invention. Thick line arrows shown in FIG. 9 indicate the direction of airflow. 9, the same components as those shown in FIGS. 1 to 8 described above are denoted by the same reference numerals as those in FIG. 1 and the description thereof is omitted.

  The processing unit 502 according to the fifth embodiment has the same configuration as the processing unit 302 according to the third embodiment. In other words, in addition to the configuration of the processing unit 302 according to the third embodiment, the processing unit 502 according to the fifth embodiment removes clean air discharged from the cylindrical member 345 from the upper surface of the substrate W and the opposing surface of the shielding plate 6. 16 (lower surface) is included between the guides 555. Furthermore, in the processing unit 502 according to the fifth embodiment, the upper position of the blocking plate 6 is set to the same height as the lower end portion of the tubular member 345.

  The guide 555 extends downward from the diffusion plate 39. At least a part of the lower end of the guide 555 is disposed closer to the blocking plate 6 than the upper end of the guide 555. The guide 555 may be a member having an L-shaped cross section, or may be a plate-like member extending obliquely downward toward the blocking plate 6 side. The guide 555 surrounds the retracted blocking plate 6. The guide 555 may be configured by an integrated member that is continuous over the entire circumference, or may be configured by a plurality of members that are divided in the circumferential direction. The inner peripheral end of the lower end portion of the guide 555 is disposed outside the blocking plate 6. The lower end of the guide 555 is disposed below the retreating blocking plate 6.

  The clean air sent from the FFU 51 to the diffusion space S4 is discharged horizontally from the cylindrical member 345 (small diameter portion 47) into the shielding plate retracting space S5. Clean air discharged from the tubular member 345 flows downward between the bellows 21 and the tubular member 345, passes through a gap between the outer peripheral portion of the shielding plate 6 and the tubular member 345, and then enters the shielding plate 6. Move downwards. Then, the clean air that has moved below the blocking plate 6 is guided between the substrate W and the blocking plate 6 by the guide 555. Clean air supplied between the substrate W and the blocking plate 6 is sucked into the cup 7 by the suction force from the exhaust device. Thereby, a downward flow is formed between the substrate W and the shielding plate 6, and the stay of the contaminated atmosphere between the substrate W and the shielding plate 6 is suppressed or prevented. Therefore, contamination of the substrate W due to contact with the contaminated atmosphere can be reduced.

Sixth Embodiment FIG. 10 is a longitudinal sectional view of a processing unit 602 provided in a substrate processing apparatus 601 according to a sixth embodiment of the present invention. Thick line arrows shown in FIG. 10 indicate the direction of airflow. 10, the same components as those shown in FIGS. 1 to 9 are given the same reference numerals as those in FIG. 1 and the description thereof is omitted.

The processing unit 602 according to the sixth embodiment has the same configuration as the processing unit 2 according to the first embodiment except for a cylindrical member. That is, the processing unit 602 according to the sixth embodiment includes a tubular member 645 instead of the tubular member 45 according to the first embodiment.
The cylindrical member 645 includes a cylindrical small-diameter portion 47 that surrounds the rotation axis A <b> 1 and a cylindrical inclined portion 658 that extends obliquely downward from the lower end portion of the small-diameter portion 47 to the side opposite to the blocking plate 6. The annular member 46 extends outward from the lower end of the inclined portion 658. The small diameter portion 47 and the inclined portion 658 are disposed coaxially. The inclined portion 658 surrounds the shield plate 6 in the retracted state. The upper position of the blocking plate 6 may be set to a height between the upper end and the lower end of the inclined portion 658, or may be set to a height above or below the inclined portion 658. The inner diameter of the lower end portion of the inclined portion 658 is larger than the outer diameter of the spin chuck 5 and smaller than the outer diameter of the cup 7. The inclined portion 658 has a plurality of discharge ports 54 formed over the entire area of the inclined portion 658. The plurality of discharge ports 54 formed in the inclined portion 658 are arranged at intervals in the circumferential direction and the vertical direction.

  The clean air sent from the FFU 51 to the diffusion space S4 is discharged obliquely downward from the plurality of discharge ports 54 of the inclined portion 658 to the blocking plate 6 side. Therefore, an annular airflow that flows obliquely downward toward the blocking plate 6 side is formed between the substrate W and the blocking plate 6. The clean air supplied between the substrate W and the blocking plate 6 is sucked into the cup 7 by the suction force from the exhaust device. Thereby, a downward flow is formed between the substrate W and the shielding plate 6, and the stay of the contaminated atmosphere between the substrate W and the shielding plate 6 is suppressed or prevented. Therefore, contamination of the substrate W due to contact with the contaminated atmosphere can be reduced.

Other Embodiments Although the description of the first to sixth embodiments of the present invention has been described above, the present invention is not limited to the contents of the first to sixth embodiments described above, and the scope of the claims. Various modifications can be made within.
For example, in the above-described first to sixth embodiments, the case where the clean air sent from the common blower (FFU) is discharged from the cylindrical member and the annular member has been explained, but sent from separate blowers. Clean air may be discharged from the cylindrical member and the annular member. Moreover, the gas sent to the cylindrical member and the annular member is not limited to clean air, and may be an inert gas such as nitrogen gas. Naturally, gases other than clean air and inert gas may be sent to the cylindrical member and the annular member.

In the first to sixth embodiments described above, the case where the plurality of discharge ports formed in the tubular member are arranged at intervals in the circumferential direction has been described. An annular discharge port that is continuous over the circumference may be formed in the cylindrical member. The same applies to the discharge port formed in the annular member.
In the first to sixth embodiments described above, the case where the support arm that supports the blocking plate is disposed outside the chamber has been described. However, the support arm may be disposed within the chamber.

In the second, fourth, and fifth embodiments described above, the guide has been described for the case where the clean air discharged from the cylindrical member is guided between the substrate and the blocking plate. However, the guide is annular. Clean air discharged from the member may be guided between the substrate and the blocking plate.
In the sixth embodiment described above, the case where the guide is not provided in the processing unit has been described. However, the guide that guides the clean air discharged from the cylindrical member between the substrate and the blocking plate is the first guide. The processing unit according to the sixth embodiment may be provided.

In the first to sixth embodiments, the case where the substrate processing apparatus is an apparatus that processes a disk-shaped substrate has been described. However, the substrate processing apparatus is a polygonal substrate such as a substrate for a liquid crystal display device. An apparatus for processing a substrate may be used.
In addition, various design changes can be made within the scope of matters described in the claims.

1: substrate processing apparatus 4: chamber 5: spin chuck (substrate holding means)
6: Blocking plate (opposing member)
16: Opposing surface 19: Support arm (support member)
45: Cylindrical member (airflow forming member, discharge member)
46: annular member (downflow forming member)
47: Small diameter part (inward discharge part)
48: Horizontal part (downward discharge part)
49: Large diameter part (inward discharge part)
51: Fan filter unit (air blowing means)
201: Substrate processing apparatus 255: Guide (air flow forming member)
301: Substrate processing apparatus 345: Cylindrical member (airflow forming member, discharge member)
401: Substrate processing device 455: Guide (air flow forming member)
501: Substrate processing apparatus 555: Guide (airflow forming member)
601: Substrate processing apparatus 645: Cylindrical member (airflow forming member)
658: Inclined part (diagonal downward discharge part)
W: Substrate

Claims (10)

A chamber;
Substrate holding means for holding the substrate horizontally in the chamber;
A facing member including a facing surface facing the top surface of the substrate held by the substrate holding means;
Counter member lifting means for lifting and lowering the counter member between an upper position and a lower position;
Including a discharge member disposed around the counter member when the counter member is disposed at an upper position, and supplying gas discharged from the discharge member between the substrate and the counter member An airflow forming member that forms an airflow that flows inward toward the center of the substrate in a plan view when the facing member is disposed at an upper position between the upper surface of the substrate and the facing surface. Substrate processing equipment.   The substrate processing apparatus according to claim 1, further comprising a downflow forming member that discharges a gas downward around the airflow forming member to form a downflow in the chamber.   The substrate processing apparatus according to claim 2, further comprising a support member disposed outside the chamber and supporting the opposing member.   The substrate processing apparatus according to claim 2, further comprising a blowing unit that sends gas to the airflow forming member and the downflow forming member. The substrate processing apparatus according to claim 1, wherein the discharge member includes an inward discharge unit that horizontally discharges gas from the periphery of the counter member toward the counter member. The substrate processing according to claim 5, wherein at least a part of the inward discharge portion is disposed at a height between the substrate and the facing member when the facing member is disposed at an upper position. apparatus. The discharge member further includes a downward discharge portion that discharges gas downward and above the inward discharge portion, and causes the gas to collide with the gas discharged by the inward discharge portion. The substrate processing apparatus as described. The substrate processing apparatus according to claim 1, wherein the discharge member includes a diagonally downward discharge unit that discharges gas obliquely downward from the periphery of the counter member toward the counter member. The air flow forming member further comprises a guide for guiding between said substrate and said opposing member when the gas discharged from the discharge member said opposing member is disposed at the upper position, claims 1-8 The substrate processing apparatus as described in any one of these. A holding step of holding the substrate horizontally in the chamber by the substrate holding means;
While positioned in the upper position vertically movable opposing member between the upper position and a lower position, in parallel with the holding step, a counter step of facing the opposing surface of the opposing member on the upper surface of the substrate,
Wherein a facing step and step are executed in parallel, the said opposing gas discharged from the discharge member arranged airflow forming member around the member when said opposing member is disposed at the upper position By supplying between the substrate and the opposing member, an airflow that flows inward toward the center of the substrate in a plan view when the opposing member is located at the upper position is opposed to the upper surface of the substrate. and a stream forming step of forming between the surface, the substrate processing method.

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