WO2017018481A1 - Substrate processing device, substrate processing method, and storage medium - Google Patents

Substrate processing device, substrate processing method, and storage medium Download PDF

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Publication number
WO2017018481A1
WO2017018481A1 PCT/JP2016/072157 JP2016072157W WO2017018481A1 WO 2017018481 A1 WO2017018481 A1 WO 2017018481A1 JP 2016072157 W JP2016072157 W JP 2016072157W WO 2017018481 A1 WO2017018481 A1 WO 2017018481A1
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WO
WIPO (PCT)
Prior art keywords
substrate
guard
nozzle
mist
processing liquid
Prior art date
Application number
PCT/JP2016/072157
Other languages
French (fr)
Japanese (ja)
Inventor
伊藤　規宏
治郎 東島
信博 緒方
貴久 大塚
裕一 道木
佑介 橋本
一博 相浦
後藤　大輔
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016122690A external-priority patent/JP6740028B2/en
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to US15/747,921 priority Critical patent/US11024518B2/en
Priority to KR1020187002473A priority patent/KR102566736B1/en
Priority to CN201680044518.2A priority patent/CN107851572B/en
Publication of WO2017018481A1 publication Critical patent/WO2017018481A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B17/00—Methods preventing fouling
    • B08B17/02—Preventing deposition of fouling or of dust
    • B08B17/025—Prevention of fouling with liquids by means of devices for containing or collecting said liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0229—Suction chambers for aspirating the sprayed liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0264—Splash guards
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention relates to a technique for performing liquid processing on a substrate by supplying the processing liquid to a rotating substrate.
  • the manufacturing process of a semiconductor device includes liquid processing such as chemical cleaning processing or wet etching processing.
  • liquid processing apparatus that performs such liquid processing on a substrate such as a semiconductor wafer
  • a holding unit that holds the substrate in a processing container called a chamber
  • a rotating mechanism that rotates the substrate such as a semiconductor wafer
  • processing on the rotating substrate A device is known that includes a nozzle that supplies a liquid and a cup that receives the shaken processing liquid.
  • processing liquid supplied to the substrate is collected by the cup, but a part of the misted processing liquid scatters outside the cup.
  • an atmosphere derived from the processing liquid, especially chemical liquid is formed around the substrate, and chemical liquid components in the atmosphere adhere to the substrate during liquid processing and contaminate the substrate. There is.
  • the humidity around the substrate increases, which may adversely affect the drying process of the substrate.
  • the present invention provides a technique capable of preventing the processing liquid scattered from the substrate outside the cup from adhering to the inner wall of the chamber.
  • a substrate holding unit that holds a substrate, at least one processing liquid nozzle that discharges a processing liquid to the substrate held by the substrate holding unit, the substrate holding unit, and the processing liquid
  • a processing container that accommodates a nozzle
  • a fixed cup body that is arranged around the substrate holding portion and that is relatively immovable with respect to the processing container that receives at least the processing liquid supplied to the substrate or the mist of the processing liquid
  • the fixing A mist guard that is provided outside the fixed cup body so as to surround the cup body, and that blocks liquid that splashes outward beyond the upper portion of the fixed cup body
  • An elevating mechanism that elevates and lowers to a second guard height lower than the guard height, wherein the mist guard includes a cylindrical tube portion, and an upper portion of the tube portion toward the inside of the tube portion of the fixed cup body. And a projecting portion projecting toward the substrate processing apparatus is provided.
  • a substrate holding unit that holds a substrate, at least one processing liquid nozzle that discharges a processing liquid onto an upper surface of the substrate held by the substrate holding unit, and the substrate holding unit,
  • a processing container that accommodates the processing liquid nozzle, a fixed cup body that is relatively fixed to the processing container that is disposed around the substrate holding unit and that receives the processing liquid supplied to the substrate or the mist of the processing liquid;
  • a mist guard that is provided outside the fixed cup body so as to surround the fixed cup body, blocks liquid that splashes outward beyond the fixed cup body, and an elevating mechanism that raises and lowers the mist guard;
  • the mist guard includes a cylindrical tube portion, and a projecting portion that protrudes from an upper end of the tube portion toward the fixed cup body.
  • a computer program when a computer program is stored in a storage medium, and the computer program is executed by a computer constituting a control device of the substrate processing apparatus, the computer processes the substrate processing.
  • a storage medium for controlling the operation of the apparatus to execute the above substrate processing method.
  • the mist guard having the overhanging portion, it is possible to prevent the processing liquid scattered over the cup from adhering to the inner wall of the processing container.
  • FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment.
  • the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.
  • the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3.
  • the carry-in / out station 2 and the processing station 3 are provided adjacent to each other.
  • the loading / unloading station 2 includes a carrier placement unit 11 and a conveyance unit 12. A plurality of carriers C that accommodate a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.
  • the transfer unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transfer device 13 and a delivery unit 14 inside.
  • the substrate transfer device 13 includes a substrate holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the substrate holding mechanism. Do.
  • the processing station 3 is provided adjacent to the transfer unit 12.
  • the processing station 3 includes a transport unit 15 and a plurality of processing units 16.
  • the plurality of processing units 16 are provided side by side on the transport unit 15.
  • the transfer unit 15 includes a substrate transfer device 17 inside.
  • the substrate transfer device 17 includes a substrate holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using the substrate holding mechanism. I do.
  • the processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.
  • the substrate processing system 1 includes a control device 4.
  • the control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19.
  • the storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1.
  • the control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.
  • Such a program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium.
  • Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
  • the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14.
  • the wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.
  • the wafer W loaded into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier platform 11 by the substrate transfer device 13.
  • FIG. 2 is a diagram showing a schematic configuration of the processing unit 16.
  • the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a cup 50.
  • the processing fluid supply unit 40 supplies a processing fluid to the wafer W.
  • the chamber 20 accommodates the substrate holding mechanism 30, the processing fluid supply unit 40, and the cup 50.
  • An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20.
  • the FFU 21 forms a down flow in the chamber 20.
  • a rectifying plate 22 having a large number of holes (not shown) formed immediately below the outlet of the FFU 21 is provided to optimize the distribution of the downflow gas flowing through the space in the chamber 20.
  • the substrate holding mechanism 30 includes a holding unit (substrate holding unit) 31, a rotating shaft 32, and a driving unit 33.
  • the holding unit 31 can hold the wafer W horizontally.
  • the drive unit 33 rotates the holding unit 31 via the rotation shaft 32, thereby rotating the wafer W held by the holding unit 31 around the vertical axis.
  • the holding unit 31 includes a disk-shaped base plate 31a, a plurality of holding elements 31b that hold the wafer W provided on the base plate 31a, and the wafer W that is separated from the holding element 31b when the wafer W is loaded into and unloaded from the processing unit 16. It has the lift pin 31c which supports a lower surface.
  • the holding element 31b can be configured by a movable holding claw attached to the base plate 31a capable of holding / releasing the peripheral edge of the wafer W, a holding pin fixed to the base plate 31a, or the like.
  • the lift pin 31c is fixed to a ring-shaped lift pin plate 31d stored in a recess formed on the upper surface of the base plate 31a.
  • the lift pin plate 31d can be lifted by a lifting mechanism (not shown) to lift the wafer W.
  • the wafer W can be transferred between the arm of the substrate transfer device 17 that has entered the chamber 20 and the lift pin plate 31d that has been lifted.
  • the cup (cup assembly) 50 will be described in detail below.
  • the cup 50 has a role of controlling the airflow around the wafer W while collecting the processing liquid scattered from the wafer W.
  • the cup 50 is arrange
  • the cup 50 is composed of a plurality of components.
  • the cup 50 has a stationary (fixed) exhaust cup 51 on the outermost side, and a drainage cup 52 for guiding a processing liquid on the inner side.
  • first rotating cup 53 and the second rotating cup 54 are attached to the base plate 31a of the holding unit 31 and rotate together with the base plate 31a.
  • the first rotating cup 53 and the second rotating cup 54 receive the liquid splashed outward from the wafer W after being supplied to the surface (upper surface) of the wafer W, and are guided obliquely downward (radially outward and downward). To do.
  • the second rotating cup 54 also has a function of guiding the liquid splashed outward from the wafer W after being supplied to the back surface (lower surface) of the wafer W.
  • the first rotating cup 53 and the second rotating cup 54 also have a function of controlling the airflow around the wafer W.
  • the drain cup 52 includes a drain cup body 521, a first movable cup element 522 (first movable cup body), and a second movable cup element 523 (second movable cup body).
  • the drain cup main body 521 has an outer peripheral cylindrical portion 521a that extends in a substantially vertical direction, an overhang portion 521b, a bottom portion 521c, and an inner peripheral portion 521d.
  • the overhanging portion 521b extends from the upper end portion of the outer peripheral cylindrical portion 521a toward the wafer W side.
  • Two convex portions 521e and 521f extend upward from the bottom portion 521c.
  • Liquid reservoirs 522a, 522b, and 522c are defined respectively.
  • the liquid reservoirs 522a, 522b, and 522c are factory waste liquid systems for acidic liquid (DR1), alkaline liquid (DR2), and organic liquid (DR3) through drain lines 523a, 523b, and 523c connected to the liquid reservoirs 522a, 522b, and 522c, respectively. Are connected to each.
  • the first movable cup element 522 and the second movable cup element 523 are fitted to the convex portions 521e and 521f so as to be movable up and down.
  • the first movable cup element 522 and the second movable cup element 523 are moved up and down by a lifting mechanism (not shown).
  • the exhaust cup 51 has an outer peripheral cylindrical portion 511, an overhanging portion 512, a bottom portion 513, and an inner peripheral portion 514.
  • An exhaust passage 551 is formed between the surfaces of the exhaust cup 51 and the drain cup main body 521 facing each other.
  • An exhaust port 552 is provided at the bottom 513 of the exhaust cup 51, and an exhaust duct (exhaust passage) 553 is connected to the exhaust port 552.
  • the exhaust duct 553 is connected to a factory exhaust duct (not shown) of the factory exhaust system in a reduced pressure atmosphere (C-EXH).
  • the exhaust duct 553 is provided with a flow control valve 554 such as a butterfly valve or a damper.
  • the opening degree of the flow control valve 554 By adjusting the opening degree of the flow control valve 554, the flow rate of the gas sucked through the exhaust passage 551 can be adjusted.
  • a device that promotes exhaustion such as an ejector or an exhaust pump, may be interposed in the exhaust duct 553.
  • the processing fluid supply unit 40 has a plurality of nozzles that supply a processing fluid (liquid or gas). As shown in FIG. 3, these nozzles include an SC1 nozzle 411 that discharges SC1 liquid, an AS nozzle 412 that discharges two fluids including DIW (pure water) droplets and nitrogen gas, DHF (rare) A DHF nozzle 413 that discharges hydrofluoric acid), a first DIW nozzle 414 that discharges pure water (DIW), an IPA nozzle 415 that discharges warmed IPA (isopropyl alcohol), and a first nozzle that discharges nitrogen gas downward in the vertical direction. 1 nitrogen gas nozzle 416, second nitrogen gas nozzle 417 that discharges nitrogen gas obliquely downward, SC2 nozzle 418 that discharges SC2 liquid, and second DIW nozzle 419 that discharges pure water (DIW).
  • the AS nozzle 412 makes DIW mist by merging DIW into the flow of nitrogen gas, and discharges two fluids containing the mist of DIW and nitrogen gas.
  • the AS nozzle 412 By supplying only DIW without supplying nitrogen gas to the AS nozzle 412, it is possible to discharge only DIW that has not been made mist from the AS nozzle 412. From the IPA nozzle 415, solvents other than DIW that are compatible with DIW, higher in volatility than DIW, and lower in surface tension than DIW can be discharged.
  • the SC1 nozzle 411 and the AS nozzle 412 are held by the first nozzle arm 421.
  • the DHF nozzle 413, the first DIW nozzle 414, and the IPA nozzle 415 are held by the second nozzle arm.
  • the first nitrogen gas nozzle 416 and the second nitrogen gas nozzle 417 are held by the third nozzle arm.
  • the first to third nozzle arms 421, 422, and 423 can be swung around the vertical axis by the arm driving mechanisms 431, 432, and 433 provided therein, and can be moved up and down in the vertical direction.
  • Each arm drive mechanism 431, 432, 433 is, for example, a rotary motor (not shown) as a turning drive mechanism for realizing the turning function, and an air cylinder as an raising / lowering mechanism (arm lifting mechanism) for realizing the lifting function. (Not shown).
  • the SC1 nozzle 411 and the AS nozzle 412 are moved between the standby place 441 outside the cup 50 and the position directly above the center portion Wc of the wafer W. It can be located at any position (see arrow M1 in FIG. 3).
  • the DHF nozzle 413, the first DIW nozzle 414 and the IPA nozzle 415 are moved directly above the standby position 442 outside the cup 50 and the center portion Wc of the wafer W. It can be located at any position between the positions (see arrow M2 in FIG. 3).
  • the first nitrogen gas nozzle 416 and the second nitrogen gas nozzle 417 are moved directly above the home standby place 443 outside the cup 50 and the center portion Wc of the wafer W. It can be located at any position between the positions (see arrow M3 in FIG. 3).
  • the home position of the corresponding nozzle (411 to 417) and the corresponding nozzle (411 to 417) are at the home position directly above the standby places (441, 442, 443).
  • the position of the corresponding nozzle arm (421, 422, 423) is also referred to as the home position of the nozzle arm.
  • the arm raising / lowering mechanism provided in the arm driving mechanism 431, 432, 433 allows each nozzle arm (421, 422, 423) to move to a high position HN (first (third) arm height) and a low position LN (second ( 4) the arm height) (see FIG. 4), and accordingly, the nozzle carried by the corresponding nozzle arm is moved closer to the wafer W than the wafer W and closer to the wafer. It is possible to move between the separated positions away from W.
  • the SC2 nozzle 418 and the second DIW nozzle 419 are fixed stationary nozzles and are fixed on a floor plate 96 described later.
  • the SC2 nozzle 418 and the second DIW nozzle 419 discharge liquid at a predetermined flow rate so that the liquid discharged from these nozzles 418 and 419 flies in a parabola and falls to the center Wc of the wafer W. Is installed.
  • the cylindrical body 450 extends in the vertical direction inside the rotary shaft 32.
  • the cylindrical body 420 is installed so as not to rotate even if the rotary shaft 32 rotates.
  • one or a plurality of processing fluid supply paths 451 (only one is shown in FIG. 2) extend in the vertical direction.
  • the upper end opening of the processing fluid supply path 451 becomes a lower surface nozzle 452 for supplying the processing fluid.
  • DIW as a rinsing liquid or a purge liquid
  • a nitrogen gas as a dry gas or a purge gas can be supplied to the rear surface (lower surface) of the wafer W.
  • the lower surface nozzle 452 is not referred to.
  • Each nozzle (411 to 419) has a corresponding processing fluid supply source (for example, a chemical supply tank for storing SC1, DHF, etc., a supply source of pure water, nitrogen gas, etc. provided as factory power) Any one of the above processing fluids is supplied from any one (not shown) via a corresponding processing fluid supply mechanism (not shown).
  • the processing fluid supply mechanism includes a supply line that connects each nozzle (411 to 419) and a corresponding processing fluid supply source, and a flow control device such as an on-off valve and a flow control valve provided in the supply line. can do.
  • the processing liquid supplied to the rotating wafer W from the processing liquid nozzle is the surface of the wafer W of the processing liquid. (If liquid is supplied to the surface of the wafer W from two or more nozzles simultaneously) or by shaking off the wafer by centrifugal force, Become scattered. If the scattered droplets adhere to the inner wall surface of the chamber 20 or the apparatus components in the chamber 20, the problems described in the background art may occur.
  • a mist guard 80 is provided on the outer side of the cup 50 in order to prevent or at least greatly suppress the scattered processing liquid from reaching the inner wall surface of the chamber 20.
  • the mist guard 80 includes an outer peripheral cylindrical portion (cylindrical portion) 81 and an overhang portion that extends from the upper end portion of the outer peripheral cylindrical portion 81 toward the inner side of the outer peripheral cylindrical portion 81 (in the radial direction) and protrudes above the exhaust cup 51. 82.
  • a protrusion 83 protruding downward is provided on the lower surface of the tip of the overhang 82.
  • the mist guard 80 is moved up and down by an elevating mechanism 84 (guard elevating mechanism) (see FIG. 3), and three different height positions, that is, a high position HG (first guard height) (in FIG. 2, a one-dot chain line) ), A low position LG (second guard height) (shown by a solid line in FIG. 2) and an intermediate position MG (third guard height) (shown by a two-dot chain line in FIG. 2). See also).
  • the elevating mechanism 84 can be constituted by, for example, three-position air cylinders 84 a.
  • the mist guard 80 has a flange portion 85 that protrudes outward from the outer peripheral cylindrical portion 81.
  • the rod portion 84b of the air cylinder 84a below the flange portion 85 is connected to the mist guard 80 as the rod 84b advances and retreats.
  • the guard 80 moves up and down.
  • the elevating mechanism 84 may be constituted by a linear motion mechanism driven by a rotary motor or a linear motor. In this case, the mist guard 80 can be fixed at an arbitrary height position.
  • FIG. 5 shows the mist guard 80 at the high position HG.
  • the mist guard 80 is supplied to the rotating wafer W from the nozzles (the SC1 nozzle 411, the AS nozzle 412, the DHF nozzle 413, the first DIW nozzle 414, the SC2 nozzle 418, the second DIW nozzle 419, etc.) when at the high position HG.
  • This is the position for most effectively preventing the processing liquid (shown by broken line arrows in FIG. 5) scattered after the wafer W from reaching the inner wall of the chamber 20.
  • the desirable height of the high position HG of the mist guard 80 varies depending on the number of rotations of the wafer W and the processing liquid supply conditions (flow rate, etc.) on the surface of the wafer W, and is preferably determined by experiments.
  • the height of the uppermost portion of the mist guard 80 at the high position HG is 60 mm higher than the height of the surface of the wafer W.
  • the appropriate height of the high position HG of the mist guard 80 varies depending on the number of rotations of the wafer W and the supply conditions (flow rate, etc.) of the processing liquid onto the surface of the wafer W. Is preferably determined.
  • FIG. 6 shows the mist guard 80 at the low position LG.
  • the low position LG is a lower limit position that can be taken by the mist guard 80, and at this time, the protrusion 83 of the protruding portion 82 of the mist guard 80 contacts the upper surface of the protruding portion 512 of the exhaust cup 51. That is, the space between the surfaces of the mist guard 80 and the exhaust cup 51 facing each other is isolated from the upper space of the wafer W in the vicinity of the wafer W. Further, when the mist guard 80 is located at the low position LG, a gas flow from the upper space of the wafer W toward an exhaust port (a slit-shaped opening 97 described later) in the peripheral portion of the chamber 20 (solid arrow in FIG. 5). Is not hindered by the mist guard 80.
  • the intermediate position MG of the mist guard 80 is at an intermediate height between the high position HG and the low position LG described above.
  • the mist guard 80 at the intermediate position MG is indicated by a chain line.
  • the overhanging portion 82 of the mist guard 80 is separated upward from the overhanging portion 512 of the exhaust cup 51 (not as much as when in the high position HG). It can be suppressed to some extent that the processing liquid scattered from the inside reaches the inner wall of the chamber 20.
  • the discharge port NP of the nozzle N (at the above-mentioned separated position) is located inside the overhanging portion 82 of the mist guard 80 as shown in FIG.
  • the nozzle N is located at a position higher than the peripheral end, and does not interfere with the mist guard 80 and passes over the mist guard 80 between the upper position in the plane of the wafer W and the above-described standby position. It can move freely.
  • each arm drive mechanism (431, 432, 433) includes an elevating mechanism
  • the nozzle arm (421, 422, 423) is positioned at a high position when the mist guard 80 is positioned at the intermediate position MG.
  • the corresponding nozzle can pass over the mist guard 80 with a sufficient clearance (without fear of interference). That is, by providing the arm drive mechanism with the lifting mechanism, the intermediate position MG of the mist guard 80 can be set relatively high, and the processing liquid supplied to the wafer W when the mist guard 80 is at the intermediate position MG Scattering beyond the mist guard 80 can be suppressed.
  • the nozzle discharge port can be sufficiently brought close to the surface of the wafer W, and the processing on the surface of the wafer W can be performed. Liquid splash can be reduced.
  • the outer peripheral cylindrical portion 81 of the mist guard 80 is passed through a position where the traces of the liquid discharged from the SC2 nozzle 418 and the second DIW nozzle 419 pass when the mist guard 80 is at the high position.
  • a liquid opening 86 is formed.
  • a cylindrical guard pocket 90 for housing the outer circumferential cylindrical portion 81 of the mist guard 80 is provided outside the outer circumferential cylindrical portion 511 of the exhaust cup 51.
  • the guard pocket 90 is defined by an outer peripheral surface of the outer peripheral cylindrical portion 511 of the exhaust cup 51, a cylindrical vertical wall (vertical wall) 91 facing the outer peripheral cylindrical portion 511, and a bottom wall 92.
  • a plurality of outlets 93 are formed in the bottom wall 92 at equal intervals in the circumferential direction (only one is shown in FIG. 3).
  • a discharge pipe 94 discharge line is connected to the discharge port 93.
  • a floor plate 96 that defines the lower limit of the processing space formed in the chamber 20 from the vertical wall 91 that constitutes the guard pocket 90 toward the outside in the horizontal direction is provided.
  • the floor board 96 surrounds the entire circumference of the mist guard 80. That is, the floor plate 96 is provided with an opening (corresponding to the vertical wall 91) having a diameter slightly larger than the outer shape of the outer peripheral cylindrical portion 81 of the mist guard 80, and the mist guard 80 and the cup 50 are accommodated in the opening. Will be.
  • the floor plate 96 extends from the opening to the side wall 20 a of the chamber 20.
  • a part of the floor plate 96 terminates in front of the side wall 20a of the chamber 20, whereby a slit-shaped opening 97 (gap) is formed between the outer end 96a of the floor plate 96 and the side wall 20a of the chamber 20. .
  • An exhaust space 98 for exhausting the atmosphere of the space (processing space) in the chamber 20 is formed below the floor plate 96.
  • the exhaust space 98 is defined by a floor plate 96, wall bodies such as a side wall 20 a and a bottom wall 20 b of the chamber 20, and a vertical wall 91.
  • the chamber 20 has four side walls 20a, and one slit-like opening 97 is provided along each of the three side walls 20a. These three slit-shaped openings 97 are connected to one common exhaust space 98. Since the remaining one side wall 20a is provided with a loading / unloading port 24 with a shutter 25 for loading / unloading the wafer W into / from the chamber 20, the slit-shaped opening 97 is not provided here.
  • an exhaust port 99 is provided in the bottom wall 20 b of the chamber 20 facing the exhaust space 98.
  • An exhaust pipe 100 (exhaust line) is connected to the exhaust port 99.
  • a discharge pipe 94 joins the exhaust pipe 100.
  • a mist trap (gas-liquid separator) 101 and a flow control valve 102 such as a butterfly valve or a damper are interposed in the exhaust pipe 100 on the downstream side of the junction.
  • the downstream end of the exhaust pipe 100 is connected to a duct (not shown) of a factory exhaust system in a reduced pressure atmosphere.
  • the upper surface of the floor plate 96 is gently inclined so that its height decreases as it approaches the side wall 20 a of the chamber 20.
  • the upper surface of the floor board 96 is smooth and flat.
  • the upper surface of the floor plate 96 is substantially free of unevenness except for a portion where the SC2 nozzle 418 and the second DIW nozzle 419 are provided and a portion where necessary sensors and auxiliary equipment are provided.
  • the gas can flow smoothly toward the slit-shaped opening 97 in the vicinity of the floor plate 96. Further, when the inside of the chamber 20 is cleaned during maintenance, the cleaning liquid flows smoothly into the exhaust space 98 through the slit-shaped opening 97.
  • the lower end of the outer peripheral cylindrical portion 81 of the mist guard 80 in the high position is located slightly above the upper end of the guard pocket 90 as shown in FIG.
  • the mist guard 80 is at the high position HG, almost no droplets of the treatment liquid collide with the vicinity of the lower end of the outer peripheral cylindrical portion 81, and most of the droplets are relatively in the mist guard 80. Collide with a high position. For this reason, there is almost no merit which makes the lower end of the outer periphery cylinder part 81 lower than the upper end of the guard pocket 90.
  • the atmosphere (gas, mist, etc.) in the space between the overhang portion 82 of the mist guard 80 and the overhang portion 512 of the exhaust cup 51 is increased.
  • a plurality of, for example, four cleaning liquid nozzles 110 that discharge cleaning liquid, such as DIW, for cleaning the inner surface of the mist guard 80 are formed on the upper surface of the overhanging portion 512 of the exhaust cup 51.
  • the overhang portions 512 are arranged at equal intervals in the circumferential direction.
  • One of the four cleaning liquid nozzles 110 is shown in FIG.
  • the cleaning liquid supplied from the cleaning liquid supply unit is jetted from the cleaning liquid nozzle 110 toward the lower surface of the overhanging portion 82 of the mist guard 80. Since the lower surface of the overhanging portion 82 is inclined so as to become higher inward in the radial direction of the mist guard 80, the sprayed cleaning liquid proceeds obliquely upward along the lower surface of the overhanging portion 82. At this time, since the projection 83 is in contact with the upper surface of the overhanging portion 512 of the exhaust cup 51, the cleaning liquid does not advance beyond the projection 83.
  • the cleaning liquid sprayed from the cleaning liquid nozzle 110 fills the space between the surfaces of the exhaust cup 51 and the mist guard 80 facing each other.
  • the upper surface 516 of the overhanging portion 512 is inclined so as to become higher inward in the radial direction, so that the cleaning liquid flows down toward the guard pocket 90. Due to the flow of the cleaning liquid, the surfaces of the exhaust cup 51 and the mist guard 80 facing each other are cleaned.
  • the cleaning liquid is discharged from the guard pocket 90 through the discharge pipe 94, flows into the mist trap 101, and flows out to the factory waste liquid system through the drain pipe connected to the mist trap 101.
  • a cleaning liquid nozzle for automatically cleaning the inside and the vicinity of the cup 50 can be provided, but these are not mentioned in this specification.
  • the following operation sequence is automatically executed under the control of the control device 4 by the process recipe and the control program stored in the storage unit 19 of the control device 4 (control unit).
  • the arm of the substrate transfer device 17 loads the wafer W into the chamber 20 (processing container) through the loading / unloading port 24, and the wafer W is held by the holding unit 31 of the substrate holding mechanism 30. After the arm of the substrate transfer device 17 is withdrawn from the chamber, the shutter 25 is closed. When the wafer W is loaded, the mist guard 80 is positioned at a low position. Thereafter, a series of processes are performed on the wafer W.
  • a DHF cleaning process, a DIW rinsing process, an SC1 cleaning process, a DIW rinsing process, an IPA replacement process, and a drying process are sequentially performed on the wafer W will be described.
  • the second nozzle arm 422 pivots (see arrow M2 in FIG. 3), and the DHF nozzle 413, the first DIW nozzle 414, and the IPA nozzle 415 are in the low position LG (see FIG. 4C). ) And above the central portion of the wafer W (see FIG. 9A). Next, the mist guard 80 rises and is positioned at the high position HG (see FIGS. 4A and 5). Next, the wafer W starts to rotate. The rotation of the wafer W continues until a series of processes for the wafer W are accommodated. DHF is supplied from the DHF nozzle 413 to the center of the rotating wafer W. The DHF flows on the surface of the wafer W toward the peripheral edge of the wafer W by centrifugal force, the entire surface of the wafer W is covered with the DHF liquid film, and the surface of the wafer W is processed by DHF.
  • processing liquid in this case, DHF scattered from the wafer W passes between the first and second rotating cups 53 and 54 and flows obliquely downward. Thereafter, the processing liquid is supplied to the liquid passages 525a, 525b, and 525c according to the positions of the first and second movable cup elements 522 and 523, which are predetermined according to the type (acidic, alkaline, organic) of the processing liquid. Flows into one (the one with the inlet open), then flows into one of the liquid reservoirs 522a, 522b, and 522c, and is discarded into the factory waste liquid system through one of the drain lines 523a, 523b, and 523c. . Note that the flow of the processing liquid is common in all processes in which the processing liquid is supplied to the surface of the wafer W, and therefore redundant description in the subsequent processes is omitted.
  • a part of the processing liquid scattered from the wafer W tries to go over the overhanging portion 512 of the exhaust cup 51 toward the side wall 20 a of the chamber 20.
  • Most of the droplets of such treatment liquid collide with the inner surface of the mist guard 80 at a high position and are captured. For this reason, adhesion of a droplet of the processing liquid to the side wall 20a of the chamber 20 is prevented or suppressed to a minimum.
  • the liquid captured by the mist guard 80 either adheres to the inner surface of the mist guard 80 or flows downward on the inner surface of the mist guard 80 by gravity.
  • the FFU 21 enters the internal space of the chamber 20, that is, the processing space. Clean air is blowing downwards. This flow of clean air is rectified by the rectifying plate 22 and travels toward the wafer W.
  • the inside of the exhaust passage 551 is exhausted through the exhaust duct 553, whereby the tip of the overhanging portion 512 of the exhaust cup 51 and the drain cup 52 are exhausted.
  • the atmosphere in the space above the wafer W in the vicinity of the wafer W is sucked from the gap between the tip of the overhanging portion 521b (see the solid line arrow in FIG. 5).
  • the exhaust flow rate through the exhaust duct 553 is kept constant until the wafer W is loaded into the chamber 20 and then unloaded. Accordingly, the clean air supplied from the FFU 21 is supplied to the space above the wafer W, while the atmosphere in the space above the wafer W is drawn into the exhaust passage 551. Thereby, the atmosphere in the space above the wafer W in the vicinity of the wafer W is maintained clean.
  • the liquid passages 525a, 525b, and 525c are not exhausted (suctioned). That is, the gas that flows into the cup 50 from the space above the wafer W near the wafer W does not flow into the liquid passages 525a, 525b, and 525c, but flows into the exhaust passage 551.
  • the liquid passages 525a, 525b, and 525c cannot have the same cross-sectional shape, and the flow passage resistances of the liquid passages 525a, 525b, and 525c are different from each other.
  • a droplet that flows downward due to gravity on the inner surface of the mist guard 80 falls into the guard pocket 90, flows through the discharge pipe 94 and the exhaust pipe 100, and is discharged from the drain 103 of the mist trap 101 to a factory waste liquid system (not shown).
  • DIW rinse process (first time)
  • the discharge of DIW from the first DIW nozzle 414 is started while the mist guard 80 is maintained at the high position HG, and immediately after that, the discharge of DHF from the DHF nozzle 413 is stopped.
  • DIW DIW rinse process
  • DIW that has not been misted is discharged from the AS nozzle 412.
  • the discharge of DIW from the first DIW nozzle 414 is stopped.
  • the mist guard 80 is raised and positioned at the high position HG.
  • the second nozzle arm 422 is positioned at the low position LN (see FIG. 4A).
  • the surface of the wafer W is overlapped.
  • the liquid film of DIW partially disappears, so that a part of the surface of the wafer W can be prevented from being exposed to the air atmosphere (causing the generation of water marks and particles).
  • the DIW discharge start timing from the AS nozzle 412 and the DIW discharge stop timing from the first DIW nozzle 414 are arbitrary.
  • the mist guard 80 when the mist guard 80 is located at the intermediate position MG, the droplet scattering blocking function of the mist guard 80 is lower than when it is located at the high position HG. For this reason, in order to reduce the amount of droplets scattered from the wafer W, the height of the droplets, etc., the rotational speed of the wafer W is decreased and / or the discharge flow rate of DIW from the AS nozzle 412 and the first DIW nozzle 414 is reduced. Decrease (in the range where the surface exposure of the wafer W does not occur), and shorten the time during which the AS nozzle 412 and the first DIW nozzle 414 simultaneously discharge DIW as much as possible (the liquid discharged from different nozzles is the wafer). It is preferable to take measures such as splashing easily upon collision on W).
  • DIW rinse process (second time)
  • the discharge of DIW from the AS nozzle 412 is started while the mist guard 80 is maintained at the high position HG, and immediately after that, the discharge of SC1 from the SC1 nozzle 411 is stopped.
  • the SC1 and the reaction product remaining on the wafer W are washed away.
  • the nozzle arm is replaced. While continuing to discharge DIW from the AS nozzle 412 (the discharge flow rate may be reduced in a range where the DIW liquid film breakage on the surface of the wafer W may not occur), the mist guard 80 is lowered and positioned at the intermediate position MG. Further, the nozzle arms 421 and 422 are raised and positioned at the high position HN (see FIG. 4B). Next, the second nozzle arm 422 is swung so that the first DIW nozzle 414 is positioned directly above the center of the wafer W.
  • the discharge of IPA from the IPA nozzle 415 is started, and immediately after that, the discharge of DIW from the first DIW nozzle 414 is stopped.
  • the mist guard 80 is lowered and positioned at the low position LG.
  • the supplied IPA replaces DIW on the surface of the wafer W, and the surface of the wafer W is covered with a liquid film of IPA.
  • the third nozzle arm 423 is turned to position the first nitrogen gas nozzle 416 directly above the center of the wafer W.
  • the second nozzle arm 422 is directed toward the home position (toward the peripheral edge of the wafer W while continuing to discharge IPA from the IPA nozzle 415).
  • Start moving When the first nitrogen gas nozzle 416 is positioned immediately above the center of the wafer W, discharge of nitrogen gas from the first nitrogen gas nozzle 416 is started.
  • the discharge of the nitrogen gas from the second nitrogen gas nozzle 417 is started, and the third nozzle arm 423 is moved toward the home position (toward the peripheral edge of the wafer W) (see FIG. 9F). .
  • the collision position of the IPA discharged from the IPA nozzle 415 on the surface of the wafer W is maintained radially outside the collision position of the nitrogen gas discharged from the second nitrogen gas nozzle 417 on the surface of the wafer W.
  • the turning motion of the first nozzle arm 421 and the third nozzle arm 423 is controlled.
  • the nitrogen gas discharged from the second nitrogen gas nozzle 417 pushes the IPA liquid film in the wafer peripheral direction, and the circular dry region formed on the surface of the wafer W gradually spreads from the central portion toward the peripheral portion. go.
  • the entire surface of the wafer W is dried when the second nitrogen gas nozzle 417 passes the periphery of the wafer W.
  • the drying process is completed.
  • the nozzle arms 421 and 423 return to their home positions and wait there.
  • the mist guard 80 is located at the low position LG. Therefore, the gas flow from the space above the wafer W toward the slit-shaped opening 97 is not hindered by the mist guard 80. This prevents or reduces the mist or vapor of DIW scattered in the previous process in the space above the wafer W. For this reason, the space above the wafer W can be maintained at a low humidity, and the drying efficiency can be improved. Even if IPA scatters and adheres to the side wall 20a of the chamber 20, the highly volatile IPA evaporates in a short time and is exhausted to the outside of the chamber 20, so that the atmosphere inside the chamber 20 is adversely affected. Absent.
  • the cleaning process is performed on the mist guard 80 located at the low position LG according to the procedure described above with reference to FIG.
  • the chemical component adhering to (the wafer W side surface) is removed.
  • the processed wafer W is carried out of the chamber 20 by the reverse procedure of loading.
  • the SC2 liquid is supplied from the SC2 nozzle 418 to the center of the wafer W with the mist guard 80 at the high position HG.
  • the operation sequence may include a step of performing a rinse process by supplying DIW from the second DIW nozzle 419 to the central portion of the wafer W after the cleaning.
  • the mist guard 80 that can be moved up and down, the chemical component or moisture that is scattered by the raised mist guard 80 is shielded, so that the chemical component or moisture can be contained in the inner wall surface of the chamber 20 or the chamber. It can prevent efficiently adhering to an internal apparatus. Moreover, since the mist guard 80 has the overhang
  • the lower end portion of the outer peripheral cylindrical portion 81 of the mist guard 80 at the high position HG is outside the guard pocket 90, but it may be inside.
  • a ventilation opening 87 can be provided at the lower end portion of the outer peripheral cylindrical portion 81.
  • a plurality of ventilation openings 87 extending along the circumferential direction of the mist guard 80 are provided at intervals in the circumferential direction of the mist guard 80.
  • the exhaust cup 51 is the outermost stationary cup-shaped component constituting the cup 50, but is not limited to this.
  • the exhaust cup 51 may be removed from the cup 50, and the drain cup 52 may be an outermost stationary cup-shaped component constituting the cup 50.
  • a mist guard 80 is provided adjacent to the outside of the drainage cup 52.
  • the positional relationship between the drain cup 52 and the mist guard 80 in this case can be understood by considering the exhaust cup 51 as the drain cup (52) in FIG.
  • the pipes constituting the drain lines 523a, 523b, and 523c are connected to a factory exhaust system (or a suction device such as a suction pump or an ejector) to serve as an exhaust line.
  • a gas-liquid separation device such as a mist trap is provided in the exhaust line, and the liquid separated by the mist trap is discarded, for example, into a factory waste liquid system.
  • FIG. 11 another embodiment of the cleaning process for the mist guard 80 will be described.
  • the same members as those already described with reference to FIGS. 1 to 10 are denoted by the same reference numerals, and redundant description is omitted.
  • the mist guard 80A shown in FIG. 11 is different from the mist guard 80 shown in FIG. 8 in that a ring-shaped (annular) gap forming portion 823 (portion protruding downward) is provided on the lower surface of the overhang portion 82. Is different.
  • the gap forming portion 823 extends radially inward from the inner peripheral surface of the outer peripheral cylindrical portion 81 of the mist guard 80A.
  • a gap G1 between the lower surface of the gap forming portion 823 and the upper surface of the overhanging portion 512 of the exhaust cup 51 opposite thereto is provided as the gap forming portion 823 of the mist guard 80A. It is narrower than the gap G2 between the non-exposed portion (inward in the radial direction from the gap G1) and the upper surface of the overhanging portion 512 of the exhaust cup 51 facing this.
  • the size of the gap G1 is preferably set to a value that is large enough to allow the cleaning liquid to be described later to spread over the entire area of the gap G1, but small enough that the cleaning liquid does not easily flow out of the gap G1, for example, 0 .About 1 to 0.5 mm.
  • the gap forming portion 823 continuously extends in the circumferential direction over the entire circumference of the overhang portion 82 of the mist guard 80A.
  • a plurality of radial grooves 824 for guiding the cleaning liquid supplied from the cleaning liquid nozzle 110 to the gap G2 are formed on the lower surface of the gap forming portion 823.
  • the gap between the groove bottom surface (the upper surface of the groove) of the radial groove 824 and the upper surface of the overhanging portion 512 of the exhaust cup 51 facing the groove is wider than the gap G1.
  • the radial groove 824 extends inward in the radial direction and communicates with the gap G2.
  • the same number of radial grooves 824 as the cleaning liquid nozzles 110 are provided.
  • the cleaning liquid nozzle 110 is provided in the overhanging portion 512 at a position facing the radial groove 824 and supplies the cleaning liquid toward the radial groove 824.
  • the radial groove 824 does not have to extend strictly in the radial direction, and may extend at an angle with respect to the radial direction.
  • a circumferential groove (circumferential groove) 825 extending in the circumferential direction over the entire circumference of the mist guard 80A is formed on the lower surface of the ring-shaped gap forming portion 823.
  • the circumferential groove 825 intersects all the radial grooves 824 and communicates with all the radial grooves 824.
  • the circumferential position of the circumferential groove 825 is radially inward of the cleaning liquid nozzle 110.
  • the mist guard 80A is positioned at the above-described low position LG as shown in FIG. 11, and DIW as the cleaning liquid is discharged from the cleaning liquid nozzle 110.
  • the cleaning liquid discharged from each cleaning liquid nozzle 110 flows into the gap G ⁇ b> 2 through the corresponding radial groove 824.
  • the flow rate of the cleaning liquid discharged from the cleaning liquid nozzle 110 is larger than the flow rate of the cleaning liquid flowing out into the guard pocket 90 through the gap G1.
  • the gap G2 can be filled with the cleaning liquid over the entire circumference.
  • the cleaning liquid is in contact with the lower surface of the projection 83 and the overhang portion 512.
  • the lower surface of the protrusion 83 may not be in contact with the upper surface of the overhanging portion 512.
  • the flow rate of the cleaning liquid discharged from the cleaning liquid nozzle 110 is the flow rate of the cleaning liquid flowing out into the guard pocket 90 through the gap G1 and the cleaning liquid flowing out from the gap between the protrusion 83 and the upper surface of the overhanging portion 512. What is necessary is just to increase more than the sum total of flow volume.
  • the cleaning liquid flowing in the radial groove 824 flows into the circumferential groove 825 and spreads in the circumferential direction.
  • the cleaning liquid diffuses into the narrow gap G1.
  • the entire space (that is, the gap G1 + G2) between the lower surface of the overhanging portion 82 of the mist guard 80A and the upper surface of the overhanging portion 512 of the exhaust cup 51 is filled with the cleaning liquid.
  • the cleaning liquid dissolves adhering substances such as a chemical solution and a reaction product adhering to the lower surface of the overhang portion 82 and the upper surface of the overhang portion 512. Deposits dissolved in the cleaning liquid are discharged into the guard pocket 90 together with the cleaning liquid. In this manner, the surface of the mist guard 80A (the surface on the wafer W side) can be cleaned.
  • the cleaning liquid in the space between the lower surface of the overhanging portion 82 of the mist guard 80A and the upper surface of the overhanging portion 512 of the exhaust cup 51 is removed from the overhanging portion 512 that is an inclined surface. It flows into the guard pocket 90 along the upper surface. This completes the cleaning.
  • the above washing operation may be repeated.
  • the space between the lower surface of the overhanging portion 82 of the mist guard 80A and the upper surface of the overhanging portion 512 of the exhaust cup 51 can be filled with the cleaning liquid evenly.
  • the entire surface of the surface to be cleaned on the lower surface of the overhang portion 82 and the upper surface of the overhang portion 512 can be cleaned without unevenness.
  • the gap forming portion 823 is formed with the radial groove 824, but the radial groove 824 may not be provided.
  • the cleaning liquid nozzle 110B is provided in the projecting portion 512 of the exhaust cup 51 at a position radially inward of the gap forming portion 823B of the mist guard 80B.
  • the gap G2 can be filled with the cleaning liquid over the entire circumference by the cleaning liquid supplied from the cleaning liquid nozzle 110B.
  • the gap G1 between the lower surface of the gap forming portion 823 and the upper surface of the overhanging portion 512 can be filled with the cleaning liquid over the entire circumference. Deposits dissolved in the cleaning liquid are discharged into the guard pocket 90B together with the cleaning liquid. In this manner, the surface of the mist guard 80B (the surface on the wafer W side) can be cleaned.
  • a cover 60 is provided around the SC2 nozzle 418 shown in FIG.
  • the cover 60 is fixed to the floor board 96.
  • An opening 62 is formed in the front surface 61 of the cover 60 facing the mist guard 80A.
  • the SC2 liquid processing liquid
  • a shielding member 88 is provided on the outermost cylindrical portion of the mist guard 80A, that is, on the outermost peripheral portion of the upper surface of the overhang portion 82.
  • the shielding member 88 may be a member that cannot be integrated with the mist guard 80A, or may be a member that is manufactured separately from the mist guard 80A and then fixed to the mist guard 80A.
  • the shielding member 88 opens a narrow gap (for example, about 1 to 2 mm) from the portion of the front surface 61 of the cover 60 where the opening 62 is not formed. Facing each other.
  • the cover 60 and the shielding member 88 may be integrated. In this case, the cover 60 and the shielding member 88 move up and down in conjunction with the mist guard 80A. In this case, the gap 63 provided to prevent interference between the cover 60 and the shielding member 88 when the mist guard 80A is raised and lowered is not necessary. For this reason, it can prevent more reliably that the vapor
  • SC2 liquid processing liquid
  • ⁇ 64 (liquid guide member) is provided below the discharge port of the SC2 nozzle 418.
  • the SC2 liquid dripping from the discharge port of the SC2 nozzle 418 flows into the guard pocket 90 through the ridge 64. For this reason, it is possible to prevent the floor plate 96 from being contaminated by the SC2 liquid dripping from the SC2 nozzle 418 or the SC2 dripping from the floor plate 96 from being evaporated and diffused into the chamber 20.
  • the substrate to be processed is a semiconductor wafer, but is not limited to this, and may be another substrate, for example, a glass substrate for a liquid crystal display, a ceramic substrate, or the like.

Abstract

Provided is a substrate processing device comprising: a fixed cup body (51) that surrounds a substrate holding section (31) and is relatively immovable with respect to a processing container for receiving a processing liquid or a mist of the processing liquid which has been supplied to a substrate; a mist guard (80); and a guard lifting mechanism (84) for lifting and lowering the mist guard. The mist guard is provided to the outer side of the fixed cup body so as to surround the fixed cup body, and blocks liquid which splashes over and outward from the fixed cup body. The mist guard has a tubular tube part (81) and an overhanging section (82) which overhangs from the upper end of the tube part toward the side of the fixed cup body.

Description

基板処理装置、基板処理方法および記憶媒体Substrate processing apparatus, substrate processing method, and storage medium
　本発明は、回転する基板に処理液を供給することにより基板に液処理を施す技術に関する。 The present invention relates to a technique for performing liquid processing on a substrate by supplying the processing liquid to a rotating substrate.
　半導体装置の製造工程には、薬液洗浄処理またはウエットエッチング処理等の液処理が含まれる。このような液処理を半導体ウエハ等の基板に施す液処理装置として、チャンバと呼ばれる処理容器内に基板を保持する保持部と、半導体ウエハ等の基板を回転させる回転機構と、回転する基板に処理液を供給するノズルと、振り切られた処理液を受けるカップと、を備えたものが知られている。 The manufacturing process of a semiconductor device includes liquid processing such as chemical cleaning processing or wet etching processing. As a liquid processing apparatus that performs such liquid processing on a substrate such as a semiconductor wafer, a holding unit that holds the substrate in a processing container called a chamber, a rotating mechanism that rotates the substrate such as a semiconductor wafer, and processing on the rotating substrate A device is known that includes a nozzle that supplies a liquid and a cup that receives the shaken processing liquid.
　基板に供給された処理液の多くはカップにより回収されるが、ミスト化した処理液の一部がカップの外側に飛散する。この飛散した処理液がチャンバの内壁に付着すると、基板周囲に処理液特に薬液由来の雰囲気が形成され、この雰囲気中の薬液成分が液処理中の基板に付着して基板を汚染してしまうことがある。また、チャンバの内壁に水分が付着していると、基板の周囲の湿度が上昇し、基板の乾燥処理に悪影響が生じてしまうことも考えられる。 Most of the processing liquid supplied to the substrate is collected by the cup, but a part of the misted processing liquid scatters outside the cup. When the scattered processing liquid adheres to the inner wall of the chamber, an atmosphere derived from the processing liquid, especially chemical liquid, is formed around the substrate, and chemical liquid components in the atmosphere adhere to the substrate during liquid processing and contaminate the substrate. There is. In addition, if moisture adheres to the inner wall of the chamber, the humidity around the substrate increases, which may adversely affect the drying process of the substrate.
　従って、基板からカップ外に飛散した処理液がチャンバ内壁に付着することを可能な限り防止することが望ましい。 Therefore, it is desirable to prevent the processing liquid scattered from the substrate to the outside of the cup from adhering to the inner wall of the chamber as much as possible.
特開２００８－５３６９０号公報JP 2008-53690 A
　本発明は、基板からカップ外に飛散した処理液がチャンバ内壁に付着することを防止することができる技術を提供するものである。 The present invention provides a technique capable of preventing the processing liquid scattered from the substrate outside the cup from adhering to the inner wall of the chamber.
　本発明の一実施形態によれば、基板を保持する基板保持部と、前記基板保持部に保持された基板に処理液を吐出する少なくとも１つの処理液ノズルと、前記基板保持部と前記処理液ノズルを収容する処理容器と、前記基板保持部の周囲に配置され基板に供給された少なくとも処理液または処理液のミストを受ける前記処理容器に対して相対的に不動な固定カップ体と、前記固定カップ体を囲むように前記固定カップ体の外側に設けられ、前記固定カップ体の上方を越えて外方に飛散する液を遮断するミストガードと、前記ミストガードを第１ガード高さと前記第１ガード高さより低い第２ガード高さに昇降させる昇降機構と、を備え、前記ミストガードが、筒状の筒部と、前記筒部の上部から前記筒部の内側に向かって前記固定カップ体の上方に張り出す張出部とを有する、基板処理装置が提供される。 According to an embodiment of the present invention, a substrate holding unit that holds a substrate, at least one processing liquid nozzle that discharges a processing liquid to the substrate held by the substrate holding unit, the substrate holding unit, and the processing liquid A processing container that accommodates a nozzle; a fixed cup body that is arranged around the substrate holding portion and that is relatively immovable with respect to the processing container that receives at least the processing liquid supplied to the substrate or the mist of the processing liquid; and the fixing A mist guard that is provided outside the fixed cup body so as to surround the cup body, and that blocks liquid that splashes outward beyond the upper portion of the fixed cup body; An elevating mechanism that elevates and lowers to a second guard height lower than the guard height, wherein the mist guard includes a cylindrical tube portion, and an upper portion of the tube portion toward the inside of the tube portion of the fixed cup body. And a projecting portion projecting toward the substrate processing apparatus is provided.
　本発明の他の実施形態によれば、基板を保持する基板保持部と、前記基板保持部に保持された基板の上面に処理液を吐出する少なくとも１つの処理液ノズルと、前記基板保持部と前記処理液ノズルを収容する処理容器と、前記基板保持部の周囲に配置され基板に供給された処理液または処理液のミストを受ける前記処理容器に対して相対的に不動な固定カップ体と、前記固定カップ体を囲むように前記固定カップ体の外側に設けられ、前記固定カップ体の上方を越えて外方に飛散する液を遮断するミストガードと、前記ミストガードを昇降させる昇降機構と、を備え、前記ミストガードが、筒状の筒部と、前記筒部の上端から前記固定カップ体の側に向かって張り出す張出部とを有する、基板処理装置を用い、前記ミストガードを第１ガード高さに位置させた状態で、前記ノズルから前記基板保持部により保持されている基板に処理液を供給する工程と、前記ミストガードを前記第１ガード高さより低い第２ガード高さに位置させた状態で、前記基板を乾燥させる工程と、を備えた基板処理方法が提供される。 According to another embodiment of the present invention, a substrate holding unit that holds a substrate, at least one processing liquid nozzle that discharges a processing liquid onto an upper surface of the substrate held by the substrate holding unit, and the substrate holding unit, A processing container that accommodates the processing liquid nozzle, a fixed cup body that is relatively fixed to the processing container that is disposed around the substrate holding unit and that receives the processing liquid supplied to the substrate or the mist of the processing liquid; A mist guard that is provided outside the fixed cup body so as to surround the fixed cup body, blocks liquid that splashes outward beyond the fixed cup body, and an elevating mechanism that raises and lowers the mist guard; The mist guard includes a cylindrical tube portion, and a projecting portion that protrudes from an upper end of the tube portion toward the fixed cup body. 1 gar A step of supplying the processing liquid from the nozzle to the substrate held by the substrate holding portion in a state where the nozzle is positioned at a height; and the mist guard is positioned at a second guard height lower than the first guard height. And a step of drying the substrate in a state where the substrate is processed.
　本発明のさらに他の実施形態によれば、コンピュータプログラムが格納された記憶媒体であって、前記コンピュータプログラムが基板処理装置の制御装置をなすコンピュータにより実行されたときに、当該コンピュータが前記基板処理装置の動作を制御して、上記の基板処理方法を実行させる記憶媒体が提供される。 According to still another embodiment of the present invention, when a computer program is stored in a storage medium, and the computer program is executed by a computer constituting a control device of the substrate processing apparatus, the computer processes the substrate processing. There is provided a storage medium for controlling the operation of the apparatus to execute the above substrate processing method.
　上記本発明の実施形態によれば、張出部を有するミストガードを設けることにより、カップを越えて飛散した処理液が処理容器の内壁に付着することを防止することができる。 According to the embodiment of the present invention, by providing the mist guard having the overhanging portion, it is possible to prevent the processing liquid scattered over the cup from adhering to the inner wall of the processing container.
発明の一実施形態に係る基板処理システムの概略構成を示す平面図である。It is a top view which shows schematic structure of the substrate processing system which concerns on one Embodiment of invention. 処理ユニットの構成を示す縦断面図である。It is a longitudinal cross-sectional view which shows the structure of a processing unit. 処理ユニットの構成を示す平面図である。It is a top view which shows the structure of a processing unit. ミストガードとノズルアームの動きを説明するための概略図である。It is the schematic for demonstrating a motion of a mist guard and a nozzle arm. ミストガードが高位置および中間位置にあるときのガスおよび液滴の動きを説明するための説明図である。It is explanatory drawing for demonstrating the motion of gas and a droplet when a mist guard exists in a high position and an intermediate position. ミストガードが低位置にあるときのガスおよび液滴の動きを説明するための説明図である。It is explanatory drawing for demonstrating the motion of gas and a droplet when a mist guard is in a low position. ミストガードに設けた通液開口について説明する概略縦断面図である。It is a schematic longitudinal cross-sectional view explaining the liquid flow opening provided in the mist guard. ミストガードの洗浄機構について説明する部分縦断面図である。It is a fragmentary longitudinal cross-section explaining the washing | cleaning mechanism of a mist guard. ノズルアームの動きを説明するための平面図である。It is a top view for demonstrating a motion of a nozzle arm. ミストガードに設けた通気開口について説明する概略縦断面図である。It is a schematic longitudinal cross-sectional view explaining the ventilation opening provided in the mist guard. 固定ノズルカバー及びミストガードの変形例を備えた実施形態を示す概略縦断面図である。It is a schematic longitudinal cross-sectional view which shows embodiment provided with the modified example of the fixed nozzle cover and the mist guard. ミストガードの他の変形例を備えた実施形態を示す概略縦断面図である。It is a schematic longitudinal cross-sectional view which shows embodiment provided with the other modification of a mist guard.
　図１は、本実施形態に係る基板処理システムの概略構成を示す図である。以下では、位置関係を明確にするために、互いに直交するＸ軸、Ｙ軸およびＺ軸を規定し、Ｚ軸正方向を鉛直上向き方向とする。 FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.
　図１に示すように、基板処理システム１は、搬入出ステーション２と、処理ステーション３とを備える。搬入出ステーション２と処理ステーション３とは隣接して設けられる。 As shown in FIG. 1, the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.
　搬入出ステーション２は、キャリア載置部１１と、搬送部１２とを備える。キャリア載置部１１には、複数枚のウエハＷを水平状態で収容する複数のキャリアＣが載置される。 The loading / unloading station 2 includes a carrier placement unit 11 and a conveyance unit 12. A plurality of carriers C that accommodate a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.
　搬送部１２は、キャリア載置部１１に隣接して設けられ、内部に基板搬送装置１３と、受渡部１４とを備える。基板搬送装置１３は、ウエハＷを保持する基板保持機構を備える。また、基板搬送装置１３は、水平方向および鉛直方向への移動ならびに鉛直軸を中心とする旋回が可能であり、基板保持機構を用いてキャリアＣと受渡部１４との間でウエハＷの搬送を行う。 The transfer unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transfer device 13 and a delivery unit 14 inside. The substrate transfer device 13 includes a substrate holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the substrate holding mechanism. Do.
　処理ステーション３は、搬送部１２に隣接して設けられる。処理ステーション３は、搬送部１５と、複数の処理ユニット１６とを備える。複数の処理ユニット１６は、搬送部１５の両側に並べて設けられる。 The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on the transport unit 15.
　搬送部１５は、内部に基板搬送装置１７を備える。基板搬送装置１７は、ウエハＷを保持する基板保持機構を備える。また、基板搬送装置１７は、水平方向および鉛直方向への移動ならびに鉛直軸を中心とする旋回が可能であり、基板保持機構を用いて受渡部１４と処理ユニット１６との間でウエハＷの搬送を行う。 The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a substrate holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using the substrate holding mechanism. I do.
　処理ユニット１６は、基板搬送装置１７によって搬送されるウエハＷに対して所定の基板処理を行う。 The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.
　また、基板処理システム１は、制御装置４を備える。制御装置４は、たとえばコンピュータであり、制御部１８と記憶部１９とを備える。記憶部１９には、基板処理システム１において実行される各種の処理を制御するプログラムが格納される。制御部１８は、記憶部１９に記憶されたプログラムを読み出して実行することによって基板処理システム１の動作を制御する。 Further, the substrate processing system 1 includes a control device 4. The control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.
　なお、かかるプログラムは、コンピュータによって読み取り可能な記憶媒体に記録されていたものであって、その記憶媒体から制御装置４の記憶部１９にインストールされたものであってもよい。コンピュータによって読み取り可能な記憶媒体としては、たとえばハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルディスク（ＭＯ）、メモリカードなどがある。 Note that such a program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
　上記のように構成された基板処理システム１では、まず、搬入出ステーション２の基板搬送装置１３が、キャリア載置部１１に載置されたキャリアＣからウエハＷを取り出し、取り出したウエハＷを受渡部１４に載置する。受渡部１４に載置されたウエハＷは、処理ステーション３の基板搬送装置１７によって受渡部１４から取り出されて、処理ユニット１６へ搬入される。 In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.
　処理ユニット１６へ搬入されたウエハＷは、処理ユニット１６によって処理された後、基板搬送装置１７によって処理ユニット１６から搬出されて、受渡部１４に載置される。そして、受渡部１４に載置された処理済のウエハＷは、基板搬送装置１３によってキャリア載置部１１のキャリアＣへ戻される。 The wafer W loaded into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier platform 11 by the substrate transfer device 13.
　次に、処理ユニット１６の構成について図２を参照して説明する。図２は、処理ユニット１６の概略構成を示す図である。図２に示すように、処理ユニット１６は、チャンバ２０と、基板保持機構３０と、処理流体供給部４０と、カップ５０とを備える。処理流体供給部４０は、ウエハＷに対して処理流体を供給する。 Next, the configuration of the processing unit 16 will be described with reference to FIG. FIG. 2 is a diagram showing a schematic configuration of the processing unit 16. As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a cup 50. The processing fluid supply unit 40 supplies a processing fluid to the wafer W.
　チャンバ２０は、基板保持機構３０と処理流体供給部４０とカップ５０とを収容する。チャンバ２０の天井部には、ＦＦＵ（Fan　Filter　Unit）２１が設けられる。ＦＦＵ２１は、チャンバ２０内にダウンフローを形成する。ＦＦＵ２１の吹き出し口の真下に多数の穴（図示せず）が形成された整流板２２が設けられ、チャンバ２０内の空間を流れるダウンフローガスの分布を最適化している。 The chamber 20 accommodates the substrate holding mechanism 30, the processing fluid supply unit 40, and the cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a down flow in the chamber 20. A rectifying plate 22 having a large number of holes (not shown) formed immediately below the outlet of the FFU 21 is provided to optimize the distribution of the downflow gas flowing through the space in the chamber 20.
　基板保持機構３０は、保持部（基板保持部）３１と、回転軸３２と、駆動部３３とを備える。保持部３１は、ウエハＷを水平に保持することができる。駆動部３３は、回転軸３２を介して保持部３１を回転させ、これにより、保持部３１に保持されたウエハＷを鉛直方向軸線周りに回転させる。 The substrate holding mechanism 30 includes a holding unit (substrate holding unit) 31, a rotating shaft 32, and a driving unit 33. The holding unit 31 can hold the wafer W horizontally. The drive unit 33 rotates the holding unit 31 via the rotation shaft 32, thereby rotating the wafer W held by the holding unit 31 around the vertical axis.
　保持部３１は、円盤状のベースプレート３１ａと、ベースプレート３１ａに設けられたウエハＷを保持する複数の保持要素３１ｂと、処理ユニット１６へのウエハＷの搬出入時に保持要素３１ｂから離れたウエハＷの下面を支持するリフトピン３１ｃを有する。保持要素３１ｂは、ウエハＷの周縁部を保持／解放できるベースプレート３１ａに取り付けられた可動の保持爪、または、ベースプレート３１ａに固定された保持ピン等から構成することができる。 The holding unit 31 includes a disk-shaped base plate 31a, a plurality of holding elements 31b that hold the wafer W provided on the base plate 31a, and the wafer W that is separated from the holding element 31b when the wafer W is loaded into and unloaded from the processing unit 16. It has the lift pin 31c which supports a lower surface. The holding element 31b can be configured by a movable holding claw attached to the base plate 31a capable of holding / releasing the peripheral edge of the wafer W, a holding pin fixed to the base plate 31a, or the like.
　リフトピン３１ｃは、ベースプレート３１ａの上面に形成された凹所に格納されるリング状のリフトピンプレート３１ｄに固定されている。リフトピンプレート３１ｄは図示しない昇降機構により上昇し、ウエハＷを持ち上げることができる。チャンバ２０内に侵入してきた基板搬送装置１７のアームと、上昇したリフトピンプレート３１ｄとの間でウエハＷの受け渡しを行うことができる。 The lift pin 31c is fixed to a ring-shaped lift pin plate 31d stored in a recess formed on the upper surface of the base plate 31a. The lift pin plate 31d can be lifted by a lifting mechanism (not shown) to lift the wafer W. The wafer W can be transferred between the arm of the substrate transfer device 17 that has entered the chamber 20 and the lift pin plate 31d that has been lifted.
　以下にカップ（カップ組立体）５０について詳述する。カップ５０は、ウエハＷから飛散する処理液を回収するとともに、ウエハＷ周囲の気流を制御する役割を持つ。カップ５０は、保持部３１を取り囲むように配置されており、（幾何学的な意味において）概ね回転体の形状を有している。カップ５０は、複数の構成要素から構成されている。カップ５０は、最も外側にある不動の（固定された）排気カップ５１と、その内側にある処理液案内用の排液カップ５２とを有する。 The cup (cup assembly) 50 will be described in detail below. The cup 50 has a role of controlling the airflow around the wafer W while collecting the processing liquid scattered from the wafer W. The cup 50 is arrange | positioned so that the holding | maintenance part 31 may be surrounded, and has the shape of a rotary body in a geometrical meaning in general. The cup 50 is composed of a plurality of components. The cup 50 has a stationary (fixed) exhaust cup 51 on the outermost side, and a drainage cup 52 for guiding a processing liquid on the inner side.
　また、第１回転カップ５３及び第２回転カップ５４が、保持部３１のベースプレート３１ａに取り付けられており、ベースプレート３１ａと一緒に回転する。第１回転カップ５３及び第２回転カップ５４は、ウエハＷの表面（上面）に供給された後にウエハＷから外方に飛散する液を受け止めて、斜め下方（半径方向外向きかつ下方に）案内する。第２回転カップ５４は、ウエハＷの裏面（下面）に供給された後にウエハＷから外方に飛散する液を案内する機能も有している。また、第１回転カップ５３及び第２回転カップ５４は、ウエハＷ周囲の気流を制御する機能も有している。 Further, the first rotating cup 53 and the second rotating cup 54 are attached to the base plate 31a of the holding unit 31 and rotate together with the base plate 31a. The first rotating cup 53 and the second rotating cup 54 receive the liquid splashed outward from the wafer W after being supplied to the surface (upper surface) of the wafer W, and are guided obliquely downward (radially outward and downward). To do. The second rotating cup 54 also has a function of guiding the liquid splashed outward from the wafer W after being supplied to the back surface (lower surface) of the wafer W. The first rotating cup 53 and the second rotating cup 54 also have a function of controlling the airflow around the wafer W.
　排液カップ５２は、排液カップ本体５２１と、第１可動カップ要素５２２（第１可動カップ体）と、第２可動カップ要素５２３（第２可動カップ体）とを有している。排液カップ本体５２１は、概ね鉛直方向に延びる外周筒部５２１ａと、張出部５２１ｂと、底部５２１ｃと、内周部５２１ｄとを有している。張出部５２１ｂは、外周筒部５２１ａの上端部から、ウエハＷ側に向かって延びている。底部５２１ｃから２つの凸部５２１ｅ，５２１ｆが上方に延びている。 The drain cup 52 includes a drain cup body 521, a first movable cup element 522 (first movable cup body), and a second movable cup element 523 (second movable cup body). The drain cup main body 521 has an outer peripheral cylindrical portion 521a that extends in a substantially vertical direction, an overhang portion 521b, a bottom portion 521c, and an inner peripheral portion 521d. The overhanging portion 521b extends from the upper end portion of the outer peripheral cylindrical portion 521a toward the wafer W side. Two convex portions 521e and 521f extend upward from the bottom portion 521c.
　外周筒部５２１ａと凸部５２１ｅとの間、凸部５２１ｅと凸部５２１ｆとの間、並びに凸部５２１ｆと内周部５２１ｄとの間に、酸性液、アルカリ性液、有機液をそれぞれ受けるための液溜まり５２２ａ，５２２ｂ，５２２ｃがそれぞれ画定されている。液溜まり５２２ａ，５２２ｂ，５２２ｃは、各々に接続された排液ライン５２３ａ，５２３ｂ，５２３ｃを介して、酸性液用（ＤＲ１）、アルカリ性液用（ＤＲ２）、有機液用（ＤＲ３）の工場廃液系にそれぞれ接続されている。 For receiving an acidic liquid, an alkaline liquid, and an organic liquid between the outer peripheral cylindrical portion 521a and the convex portion 521e, between the convex portion 521e and the convex portion 521f, and between the convex portion 521f and the inner peripheral portion 521d, respectively. Liquid reservoirs 522a, 522b, and 522c are defined respectively. The liquid reservoirs 522a, 522b, and 522c are factory waste liquid systems for acidic liquid (DR1), alkaline liquid (DR2), and organic liquid (DR3) through drain lines 523a, 523b, and 523c connected to the liquid reservoirs 522a, 522b, and 522c, respectively. Are connected to each.
　凸部５２１ｅ，５２１ｆに第１可動カップ要素５２２、第２可動カップ要素５２３がそれぞれ上下動自在に嵌合している。第１可動カップ要素５２２及び第２可動カップ要素５２３は、図示しない昇降機構により昇降する。第１可動カップ要素５２２及び第２可動カップ要素５２３の位置を変更することにより、ウエハＷから外方に飛散した後に第１回転カップ５３及び第２回転カップ５４に案内された処理液を、それぞれ対応する液溜まり（５２２ａ，５２２ｂ，５２２ｃのうちのいずれか一つ）に導くことができる。 The first movable cup element 522 and the second movable cup element 523 are fitted to the convex portions 521e and 521f so as to be movable up and down. The first movable cup element 522 and the second movable cup element 523 are moved up and down by a lifting mechanism (not shown). By changing the positions of the first movable cup element 522 and the second movable cup element 523, the processing liquid guided to the first rotary cup 53 and the second rotary cup 54 after splashing outward from the wafer W, respectively, It can be led to the corresponding liquid reservoir (any one of 522a, 522b, 522c).
　排気カップ５１は、外周筒部５１１と、張出部５１２と、底部５１３と、内周部５１４とを有している。排気カップ５１と排液カップ本体５２１との互いに対面する表面の間に、排気通路５５１が形成されている。排気カップ５１の底部５１３には排気口５５２が設けられ、この排気口５５２に排気ダクト（排気路）５５３が接続されている。排気ダクト５５３は減圧雰囲気の工場排気系の工場排気ダクト（図示せず）に接続されている（Ｃ－ＥＸＨ）。排気ダクト５５３にはバタフライ弁またはダンパ等の流量制御弁５５４が介設されている。流量制御弁５５４の開度を調節することにより、排気通路５５１を介して吸引されるガスの流量を調節することができる。なお、排気ダクト５５３に、エジェクタまたは排気ポンプ等の排気を促進する機器を介設してもよい。 The exhaust cup 51 has an outer peripheral cylindrical portion 511, an overhanging portion 512, a bottom portion 513, and an inner peripheral portion 514. An exhaust passage 551 is formed between the surfaces of the exhaust cup 51 and the drain cup main body 521 facing each other. An exhaust port 552 is provided at the bottom 513 of the exhaust cup 51, and an exhaust duct (exhaust passage) 553 is connected to the exhaust port 552. The exhaust duct 553 is connected to a factory exhaust duct (not shown) of the factory exhaust system in a reduced pressure atmosphere (C-EXH). The exhaust duct 553 is provided with a flow control valve 554 such as a butterfly valve or a damper. By adjusting the opening degree of the flow control valve 554, the flow rate of the gas sucked through the exhaust passage 551 can be adjusted. Note that a device that promotes exhaustion, such as an ejector or an exhaust pump, may be interposed in the exhaust duct 553.
　次に、処理流体供給部４０について説明する。処理流体供給部４０は、処理流体（液体または気体）を供給する複数のノズルを有する。これらの複数のノズルには、図３に示すように、ＳＣ１液を吐出するＳＣ１ノズル４１１、ＤＩＷ（純水）の液滴と窒素ガスとを含む二流体を吐出するＡＳノズル４１２、ＤＨＦ（希フッ酸）を吐出するＤＨＦノズル４１３、純水（ＤＩＷ）を吐出する第１ＤＩＷノズル４１４、暖められたＩＰＡ（イソプロピルアルコール）を吐出するＩＰＡノズル４１５、窒素ガスを鉛直方向下方に向けて吐出する第１窒素ガスノズル４１６、窒素ガスを斜め下方に向けて吐出する第２窒素ガスノズル４１７、ＳＣ２液を吐出するＳＣ２ノズル４１８、及び純水（ＤＩＷ）を吐出する第２ＤＩＷノズル４１９が含まれる。 Next, the processing fluid supply unit 40 will be described. The processing fluid supply unit 40 has a plurality of nozzles that supply a processing fluid (liquid or gas). As shown in FIG. 3, these nozzles include an SC1 nozzle 411 that discharges SC1 liquid, an AS nozzle 412 that discharges two fluids including DIW (pure water) droplets and nitrogen gas, DHF (rare) A DHF nozzle 413 that discharges hydrofluoric acid), a first DIW nozzle 414 that discharges pure water (DIW), an IPA nozzle 415 that discharges warmed IPA (isopropyl alcohol), and a first nozzle that discharges nitrogen gas downward in the vertical direction. 1 nitrogen gas nozzle 416, second nitrogen gas nozzle 417 that discharges nitrogen gas obliquely downward, SC2 nozzle 418 that discharges SC2 liquid, and second DIW nozzle 419 that discharges pure water (DIW).
　ＡＳノズル４１２は、窒素ガスの流れにＤＩＷを合流させることによりＤＩＷをミスト化させ、このミスト化したＤＩＷと窒素ガスとを含む二流体を吐出する。ＡＳノズル４１２に窒素ガスを供給しないでＤＩＷのみを供給することにより、ＡＳノズル４１２からミスト化されていないＤＩＷのみを吐出させることができる。ＩＰＡノズル４１５から、ＤＩＷと相溶性があり、ＤＩＷより揮発性が高く、かつ、ＤＩＷより表面張力の低いＤＩＷ以外の溶剤を吐出することもできる。 The AS nozzle 412 makes DIW mist by merging DIW into the flow of nitrogen gas, and discharges two fluids containing the mist of DIW and nitrogen gas. By supplying only DIW without supplying nitrogen gas to the AS nozzle 412, it is possible to discharge only DIW that has not been made mist from the AS nozzle 412. From the IPA nozzle 415, solvents other than DIW that are compatible with DIW, higher in volatility than DIW, and lower in surface tension than DIW can be discharged.
　ＳＣ１ノズル４１１及びＡＳノズル４１２は第１ノズルアーム４２１に保持されている。ＤＨＦノズル４１３、第１ＤＩＷノズル４１４及びＩＰＡノズル４１５は、第２ノズルアームに保持されている。第１窒素ガスノズル４１６及び第２窒素ガスノズル４１７は第３ノズルアームに保持されている。第１～第３ノズルアーム４２１，４２２，４２３は各々に備えられたアーム駆動機構４３１，４３２，４３３により、鉛直軸線周りに旋回することができ、かつ、鉛直方向に昇降することができる。各アーム駆動機構４３１，４３２，４３３は、例えば上記旋回機能を実現するための旋回駆動機構として回転モータ（図示せず）、上記昇降機能を実現するための昇降機構（アーム昇降機構）としてエアシリンダ（図示せず）を備えることができる。 The SC1 nozzle 411 and the AS nozzle 412 are held by the first nozzle arm 421. The DHF nozzle 413, the first DIW nozzle 414, and the IPA nozzle 415 are held by the second nozzle arm. The first nitrogen gas nozzle 416 and the second nitrogen gas nozzle 417 are held by the third nozzle arm. The first to third nozzle arms 421, 422, and 423 can be swung around the vertical axis by the arm driving mechanisms 431, 432, and 433 provided therein, and can be moved up and down in the vertical direction. Each arm drive mechanism 431, 432, 433 is, for example, a rotary motor (not shown) as a turning drive mechanism for realizing the turning function, and an air cylinder as an raising / lowering mechanism (arm lifting mechanism) for realizing the lifting function. (Not shown).
　アーム駆動機構４３１により第１ノズルアーム４２１を旋回させることにより、ＳＣ１ノズル４１１及びＡＳノズル４１２を、カップ５０外方の待機場所４４１と、ウエハＷの中心部Ｗｃの真上の位置との間の任意の位置に位置させることができる（図３の矢印Ｍ１を参照）。アーム駆動機構４３２により第２ノズルアーム４２２を旋回させることにより、ＤＨＦノズル４１３、第１ＤＩＷノズル４１４及びＩＰＡノズル４１５を、カップ５０外方の待機場所４４２と、ウエハＷの中心部Ｗｃの真上の位置との間の任意の位置に位置させることができる（図３の矢印Ｍ２を参照）。アーム駆動機構４３３により第３ノズルアーム４２３を旋回させることにより、第１窒素ガスノズル４１６及び第２窒素ガスノズル４１７を、カップ５０外方のホーム待機場所４４３と、ウエハＷの中心部Ｗｃの真上の位置との間の任意の位置に位置させることができる（図３の矢印Ｍ３を参照）。 By turning the first nozzle arm 421 by the arm driving mechanism 431, the SC1 nozzle 411 and the AS nozzle 412 are moved between the standby place 441 outside the cup 50 and the position directly above the center portion Wc of the wafer W. It can be located at any position (see arrow M1 in FIG. 3). By rotating the second nozzle arm 422 by the arm driving mechanism 432, the DHF nozzle 413, the first DIW nozzle 414 and the IPA nozzle 415 are moved directly above the standby position 442 outside the cup 50 and the center portion Wc of the wafer W. It can be located at any position between the positions (see arrow M2 in FIG. 3). By turning the third nozzle arm 423 by the arm driving mechanism 433, the first nitrogen gas nozzle 416 and the second nitrogen gas nozzle 417 are moved directly above the home standby place 443 outside the cup 50 and the center portion Wc of the wafer W. It can be located at any position between the positions (see arrow M3 in FIG. 3).
　本明細書において、説明の便宜上、待機場所（４４１，４４２，４４３）の真上を、対応するノズル（４１１～４１７）のホームポジション、対応するノズル（４１１～４１７）がホームポジションにあるときの対応するノズルアーム（４２１，４２２，４２３）の位置をそのノズルアームのホームポジションとも言う。 In the present specification, for convenience of explanation, the home position of the corresponding nozzle (411 to 417) and the corresponding nozzle (411 to 417) are at the home position directly above the standby places (441, 442, 443). The position of the corresponding nozzle arm (421, 422, 423) is also referred to as the home position of the nozzle arm.
　アーム駆動機構４３１，４３２，４３３に備えられたアーム昇降機構により、各ノズルアーム（４２１，４２２，４２３）を高位置ＨＮ（第１（第３）アーム高さ）と低位置ＬＮ（第２（第４）アーム高さ）との間で移動させることができ（図４参照）、これに伴い、該当するノズルアームに担持されたノズルを、ウエハＷに近接した近接位置と近接位置よりもウエハＷから離れた離間位置との間で移動させることができる。 The arm raising / lowering mechanism provided in the arm driving mechanism 431, 432, 433 allows each nozzle arm (421, 422, 423) to move to a high position HN (first (third) arm height) and a low position LN (second ( 4) the arm height) (see FIG. 4), and accordingly, the nozzle carried by the corresponding nozzle arm is moved closer to the wafer W than the wafer W and closer to the wafer. It is possible to move between the separated positions away from W.
　ＳＣ２ノズル４１８及び第２ＤＩＷノズル４１９は不動の固定ノズルであり、後述する床板９６の上に固定されている。ＳＣ２ノズル４１８及び第２ＤＩＷノズル４１９は、予め定められた流量で液を吐出することにより、これらのノズル４１８，４１９から吐出された液が放物線を描いて飛んでウエハＷの中心部Ｗｃに落ちるように設置されている。 The SC2 nozzle 418 and the second DIW nozzle 419 are fixed stationary nozzles and are fixed on a floor plate 96 described later. The SC2 nozzle 418 and the second DIW nozzle 419 discharge liquid at a predetermined flow rate so that the liquid discharged from these nozzles 418 and 419 flies in a parabola and falls to the center Wc of the wafer W. Is installed.
　回転軸３２の内部を円筒体４５０が上下方向に延びている。円筒体４２０は、回転軸３２が回転しても回転しないように設置されている。円筒体４２０の内部には、１つまたは複数の処理流体供給路４５１（図２では１つだけ示す）が上下方向に延びている。処理流体供給路４５１の上端開口が処理流体を供給するための下面ノズル４５２をとなる。この下面ノズル４５２からは、ウエハＷの裏面（下面）に、例えば、リンス液またはパージ液としてのＤＩＷ、乾燥ガスまたはパージガスとしての窒素ガスを供給することができる。以下の説明においては、この下面ノズル４５２についての言及はしない。 The cylindrical body 450 extends in the vertical direction inside the rotary shaft 32. The cylindrical body 420 is installed so as not to rotate even if the rotary shaft 32 rotates. Inside the cylindrical body 420, one or a plurality of processing fluid supply paths 451 (only one is shown in FIG. 2) extend in the vertical direction. The upper end opening of the processing fluid supply path 451 becomes a lower surface nozzle 452 for supplying the processing fluid. From the lower surface nozzle 452, for example, DIW as a rinsing liquid or a purge liquid, or a nitrogen gas as a dry gas or a purge gas can be supplied to the rear surface (lower surface) of the wafer W. In the following description, the lower surface nozzle 452 is not referred to.
　各ノズル（４１１～４１９）には、対応する処理流体供給源（例えばＳＣ１、ＤＨＦ等を貯留する薬液供給タンク、工場用力として提供される純水、窒素ガス等の供給元等の各種供給部のいずれか（図示せず））から、対応する処理流体供給機構（図示せず）を介して、上記の処理流体のいずれかが供給される。処理流体供給機構は、各ノズル（４１１～４１９）と対応する処理流体供給源とを接続する供給ラインと、この供給ラインに介設された開閉弁、流量制御弁等の流量制御機器等から構成することができる。 Each nozzle (411 to 419) has a corresponding processing fluid supply source (for example, a chemical supply tank for storing SC1, DHF, etc., a supply source of pure water, nitrogen gas, etc. provided as factory power) Any one of the above processing fluids is supplied from any one (not shown) via a corresponding processing fluid supply mechanism (not shown). The processing fluid supply mechanism includes a supply line that connects each nozzle (411 to 419) and a corresponding processing fluid supply source, and a flow control device such as an on-off valve and a flow control valve provided in the supply line. can do.
　処理液ノズル（ＳＣ１ノズル４１１、ＡＳノズル４１２、ＤＨＦノズル４１３、第１ＤＩＷノズル４１４、ＳＣ２ノズル４１８、第２ＤＩＷノズル４１９等）から回転するウエハＷに供給された処理液は、処理液のウエハＷ表面への衝突により（２つ以上のノズルから同時に液がウエハＷ表面に供給された場合には液同士の衝突にもより）、あるいは、ウエハから遠心力により振り切られることにより、微小な液滴となって飛散する。この飛散した液滴がチャンバ２０の内壁面あるいはチャンバ２０内の装置構成部品に付着すると、背景技術で述べたような問題が生じうる。 The processing liquid supplied to the rotating wafer W from the processing liquid nozzle (SC1 nozzle 411, AS nozzle 412, DHF nozzle 413, first DIW nozzle 414, SC2 nozzle 418, second DIW nozzle 419, etc.) is the surface of the wafer W of the processing liquid. (If liquid is supplied to the surface of the wafer W from two or more nozzles simultaneously) or by shaking off the wafer by centrifugal force, Become scattered. If the scattered droplets adhere to the inner wall surface of the chamber 20 or the apparatus components in the chamber 20, the problems described in the background art may occur.
　飛散した処理液がチャンバ２０の内壁面に到達することを防止するか、少なくとも大幅に抑制するために、カップ５０のさらに外側にミストガード８０が設けられている。 A mist guard 80 is provided on the outer side of the cup 50 in order to prevent or at least greatly suppress the scattered processing liquid from reaching the inner wall surface of the chamber 20.
　ミストガード８０は、外周筒部（筒部）８１と、この外周筒部８１の上端部から外周筒部８１の（半径方向）内側に向かって延びて排気カップ５１の上方に張り出す張出部８２とを有している。張出部８２の先端部の下面には、下方に向けて突出する突起８３が設けられている。 The mist guard 80 includes an outer peripheral cylindrical portion (cylindrical portion) 81 and an overhang portion that extends from the upper end portion of the outer peripheral cylindrical portion 81 toward the inner side of the outer peripheral cylindrical portion 81 (in the radial direction) and protrudes above the exhaust cup 51. 82. A protrusion 83 protruding downward is provided on the lower surface of the tip of the overhang 82.
　ミストガード８０は、昇降機構８４（ガード昇降機構）（図３を参照）により昇降させられて、三つの異なる高さ位置、すなわち高位置ＨＧ（第１ガード高さ）（図２では一点鎖線で示す）、低位置ＬＧ（第２ガード高さ）（図２では実線で示す）及び中間位置ＭＧ（第３ガード高さ）（図２では二点鎖線で示す）をとることができる（図４も参照）。昇降機構８４は、図３に概略的に示すように、例えば三位置のエアシリンダ８４ａにより構成することができる。ミストガード８０は、外周筒部８１から外側に張り出すフランジ部８５を有しており、このフランジ部８５に、その下方にあるエアシリンダ８４ａのロッド８４ｂが接続され、ロッド８４ｂの進退に伴いミストガード８０が昇降する。昇降機構は８４は、回転モータにより駆動される直動機構、あるいはリニアモータにより構成してもよい。この場合、ミストガード８０を任意の高さ位置に固定することができる。 The mist guard 80 is moved up and down by an elevating mechanism 84 (guard elevating mechanism) (see FIG. 3), and three different height positions, that is, a high position HG (first guard height) (in FIG. 2, a one-dot chain line) ), A low position LG (second guard height) (shown by a solid line in FIG. 2) and an intermediate position MG (third guard height) (shown by a two-dot chain line in FIG. 2). See also). As shown schematically in FIG. 3, the elevating mechanism 84 can be constituted by, for example, three-position air cylinders 84 a. The mist guard 80 has a flange portion 85 that protrudes outward from the outer peripheral cylindrical portion 81. The rod portion 84b of the air cylinder 84a below the flange portion 85 is connected to the mist guard 80 as the rod 84b advances and retreats. The guard 80 moves up and down. The elevating mechanism 84 may be constituted by a linear motion mechanism driven by a rotary motor or a linear motor. In this case, the mist guard 80 can be fixed at an arbitrary height position.
　図５には、高位置ＨＧにあるミストガード８０が示されている。ミストガード８０は、高位置ＨＧにあるときに、ノズル（ＳＣ１ノズル４１１、ＡＳノズル４１２、ＤＨＦノズル４１３、第１ＤＩＷノズル４１４、ＳＣ２ノズル４１８、第２ＤＩＷノズル４１９等）から回転するウエハＷに供給された後にウエハＷから飛散する処理液（図５では破線矢印で示してある）がチャンバ２０の内壁に到達することを最も効果的に防止するための位置である。ミストガード８０の高位置ＨＧの望ましい高さは、ウエハＷ回転数、ウエハＷ表面上への処理液供給条件（流量等）により異なるので、実験により定めるのがよい。一例として、高位置ＨＧにあるミストガード８０の最上部の高さは、ウエハＷの表面の高さより６０ｍｍ高い。ミストガード８０が高位置ＨＧに位置しているときには、図４（ａ）に示すように、前述した近接位置にあるノズル（ノズル４１１～４１７のいずれかに対応する。図４では参照符号Ｎを付した。）の吐出口（図４では参照符号ＮＰを付した）がミストガード８０の張出部８２の内周端よりも低い位置に位置し、かつ、当該ノズルＮに対応するノズルアーム（４２１，４２２，４２３のいずれかに対応する。図４では参照符号Ａを付した。）は張出部８２より上方に位置する。なお、ミストガード８０の高位置ＨＧの適切な高さは、ウエハＷ回転数、ウエハＷ表面上への処理液供給条件（流量等）により異なるので、それら条件に応じて高位置ＨＧの高さを決定することが好ましい。 FIG. 5 shows the mist guard 80 at the high position HG. The mist guard 80 is supplied to the rotating wafer W from the nozzles (the SC1 nozzle 411, the AS nozzle 412, the DHF nozzle 413, the first DIW nozzle 414, the SC2 nozzle 418, the second DIW nozzle 419, etc.) when at the high position HG. This is the position for most effectively preventing the processing liquid (shown by broken line arrows in FIG. 5) scattered after the wafer W from reaching the inner wall of the chamber 20. The desirable height of the high position HG of the mist guard 80 varies depending on the number of rotations of the wafer W and the processing liquid supply conditions (flow rate, etc.) on the surface of the wafer W, and is preferably determined by experiments. As an example, the height of the uppermost portion of the mist guard 80 at the high position HG is 60 mm higher than the height of the surface of the wafer W. When the mist guard 80 is positioned at the high position HG, as shown in FIG. 4A, it corresponds to any of the nozzles (nozzles 411 to 417) located at the above-mentioned proximity positions. In FIG. The discharge port (indicated by reference numeral NP in FIG. 4) is located at a position lower than the inner peripheral end of the overhang portion 82 of the mist guard 80, and the nozzle arm ( Corresponds to any one of 421, 422, and 423. In FIG. Note that the appropriate height of the high position HG of the mist guard 80 varies depending on the number of rotations of the wafer W and the supply conditions (flow rate, etc.) of the processing liquid onto the surface of the wafer W. Is preferably determined.
　図６には、低位置ＬＧにあるミストガード８０が示されている。低位置ＬＧは、ミストガード８０がとりうる下限位置であり、このときミストガード８０の張出部８２の突起８３が、排気カップ５１の張出部５１２の上面に接する。つまり、ミストガード８０と排気カップ５１の互いに対面する表面の間の空間が、ウエハＷ近傍のウエハＷの上方空間から隔離される。また、ミストガード８０が低位置ＬＧに位置しているときには、ウエハＷの上方空間からチャンバ２０の周縁部にある排気口（後述するスリット状開口９７）に向かうガスの流れ（図５では実線矢印で示す）がミストガード８０により妨げられなくなる。 FIG. 6 shows the mist guard 80 at the low position LG. The low position LG is a lower limit position that can be taken by the mist guard 80, and at this time, the protrusion 83 of the protruding portion 82 of the mist guard 80 contacts the upper surface of the protruding portion 512 of the exhaust cup 51. That is, the space between the surfaces of the mist guard 80 and the exhaust cup 51 facing each other is isolated from the upper space of the wafer W in the vicinity of the wafer W. Further, when the mist guard 80 is located at the low position LG, a gas flow from the upper space of the wafer W toward an exhaust port (a slit-shaped opening 97 described later) in the peripheral portion of the chamber 20 (solid arrow in FIG. 5). Is not hindered by the mist guard 80.
　ミストガード８０の中間位置ＭＧは、前述した高位置ＨＧと低位置ＬＧとの中間の高さにある。図５には、中間位置ＭＧにあるミストガード８０が鎖線で示されている。ミストガード８０が中間位置ＭＧに位置しているときには、ミストガード８０の張出部８２が排気カップ５１の張出部５１２から上方に離れ、（高位置ＨＧにあるときほどではないが）ウエハＷから飛散する処理液がチャンバ２０の内壁に到達することをある程度抑制することができる。また、ミストガード８０が中間位置ＭＧに位置しているときには、図４（ｂ）に示すようにノズルＮ（前述した離間位置にある）の吐出口ＮＰがミストガード８０の張出部８２の内周端よりも高い位置に位置し、ノズルＮは、ミストガード８０と干渉することなく、ミストガード８０の上方を越えて、ウエハＷの面内の上方の位置と上述した待機位置との間を自在に移動することができる。 The intermediate position MG of the mist guard 80 is at an intermediate height between the high position HG and the low position LG described above. In FIG. 5, the mist guard 80 at the intermediate position MG is indicated by a chain line. When the mist guard 80 is located at the intermediate position MG, the overhanging portion 82 of the mist guard 80 is separated upward from the overhanging portion 512 of the exhaust cup 51 (not as much as when in the high position HG). It can be suppressed to some extent that the processing liquid scattered from the inside reaches the inner wall of the chamber 20. Further, when the mist guard 80 is located at the intermediate position MG, the discharge port NP of the nozzle N (at the above-mentioned separated position) is located inside the overhanging portion 82 of the mist guard 80 as shown in FIG. The nozzle N is located at a position higher than the peripheral end, and does not interfere with the mist guard 80 and passes over the mist guard 80 between the upper position in the plane of the wafer W and the above-described standby position. It can move freely.
　前述したように、各アーム駆動機構（４３１，４３２，４３３）は昇降機構を含んでいるため、ミストガード８０を中間位置ＭＧに位置させたときにノズルアーム（４２１，４２２，４２３）を高位置ＨＮに上昇させて、対応するノズルがミストガード８０の上方をより十分なクリアランスをもって（干渉の恐れなく）通過することができるようにすることができる。つまり、アーム駆動機構に昇降機構を設けることにより、ミストガード８０の中間位置ＭＧを比較的高く設定することができ、ミストガード８０が中間位置ＭＧにあるときにウエハＷに供給された処理液がミストガード８０を越えて飛散することを抑制することができる。また、ミストガード８０が高位置ＨＧにありノズルからウエハＷに処理液が供給されているときのノズルの吐出口をウエハＷの表面に十分に近づけることができ、ウエハＷの表面上での処理液の液はねを低減することができる。 As described above, since each arm drive mechanism (431, 432, 433) includes an elevating mechanism, the nozzle arm (421, 422, 423) is positioned at a high position when the mist guard 80 is positioned at the intermediate position MG. By raising to HN, the corresponding nozzle can pass over the mist guard 80 with a sufficient clearance (without fear of interference). That is, by providing the arm drive mechanism with the lifting mechanism, the intermediate position MG of the mist guard 80 can be set relatively high, and the processing liquid supplied to the wafer W when the mist guard 80 is at the intermediate position MG Scattering beyond the mist guard 80 can be suppressed. Further, when the mist guard 80 is at the high position HG and the processing liquid is being supplied from the nozzle to the wafer W, the nozzle discharge port can be sufficiently brought close to the surface of the wafer W, and the processing on the surface of the wafer W can be performed. Liquid splash can be reduced.
　なお、ミストガード８０を中間位置ＭＧに位置させたときにノズルアーム（４２１，４２２，４２３）を高位置ＨＮに上昇させることは上記の通り好ましいのであるが、低位置ＬＮに維持し続けても構わない。 Although it is preferable to raise the nozzle arm (421, 422, 423) to the high position HN when the mist guard 80 is positioned at the intermediate position MG, as described above, even if the nozzle position is kept at the low position LN. I do not care.
　図７に示すように、ミストガード８０の外周筒部８１には、ミストガード８０が高位置にあるときにＳＣ２ノズル４１８及び第２ＤＩＷノズル４１９から吐出された液の飛跡が通過する位置に、通液開口８６が形成されている。 As shown in FIG. 7, the outer peripheral cylindrical portion 81 of the mist guard 80 is passed through a position where the traces of the liquid discharged from the SC2 nozzle 418 and the second DIW nozzle 419 pass when the mist guard 80 is at the high position. A liquid opening 86 is formed.
　図２に示すように、排気カップ５１の外周筒部５１１の外側に、ミストガード８０の外周筒部８１を収容する円筒状のガードポケット９０（ミストガード収容部）が設けられている。ガードポケット９０は、排気カップ５１の外周筒部５１１の外周面と、外周筒部５１１に対面する円筒状の鉛直壁（縦壁）９１と、底壁９２により画定されている。底壁９２には、円周方向に等間隔に複数の排出口９３が形成されている（図３には１つだけ示す）。排出口９３には排出管９４（排出ライン）が接続されている。 As shown in FIG. 2, a cylindrical guard pocket 90 (mist guard housing portion) for housing the outer circumferential cylindrical portion 81 of the mist guard 80 is provided outside the outer circumferential cylindrical portion 511 of the exhaust cup 51. The guard pocket 90 is defined by an outer peripheral surface of the outer peripheral cylindrical portion 511 of the exhaust cup 51, a cylindrical vertical wall (vertical wall) 91 facing the outer peripheral cylindrical portion 511, and a bottom wall 92. A plurality of outlets 93 are formed in the bottom wall 92 at equal intervals in the circumferential direction (only one is shown in FIG. 3). A discharge pipe 94 (discharge line) is connected to the discharge port 93.
　ガードポケット９０を構成する鉛直壁９１から概ね水平方向外側に向けてチャンバ２０内に形成される処理空間の下限を画定する床板９６が設けられている。床板９６は、ミストガード８０の全周を囲んでいる。つまり、床板９６にはミストガード８０の外周筒部８１の外形よりやや大きな直径を有する開口（鉛直壁９１に対応）が設けられており、この開口内にミストガード８０およびカップ５０が収容されていることになる。床板９６は、上記開口から、チャンバ２０の側壁２０ａに至るまで延びている。 A floor plate 96 that defines the lower limit of the processing space formed in the chamber 20 from the vertical wall 91 that constitutes the guard pocket 90 toward the outside in the horizontal direction is provided. The floor board 96 surrounds the entire circumference of the mist guard 80. That is, the floor plate 96 is provided with an opening (corresponding to the vertical wall 91) having a diameter slightly larger than the outer shape of the outer peripheral cylindrical portion 81 of the mist guard 80, and the mist guard 80 and the cup 50 are accommodated in the opening. Will be. The floor plate 96 extends from the opening to the side wall 20 a of the chamber 20.
　床板９６の一部は、チャンバ２０の側壁２０ａの手前で終端しており、これにより、床板９６の外側端９６ａとチャンバ２０の側壁２０ａとの間にスリット状開口９７（隙間）が形成される。床板９６の下方には、チャンバ２０内の空間（処理空間）の雰囲気を排気するための排気空間９８が形成されている。排気空間９８は、床板９６、チャンバ２０の側壁２０ａ、底壁２０ｂ等の壁体、及び鉛直壁９１により画定されている。 A part of the floor plate 96 terminates in front of the side wall 20a of the chamber 20, whereby a slit-shaped opening 97 (gap) is formed between the outer end 96a of the floor plate 96 and the side wall 20a of the chamber 20. . An exhaust space 98 for exhausting the atmosphere of the space (processing space) in the chamber 20 is formed below the floor plate 96. The exhaust space 98 is defined by a floor plate 96, wall bodies such as a side wall 20 a and a bottom wall 20 b of the chamber 20, and a vertical wall 91.
　図３に示すように、チャンバ２０は４つの側壁２０ａを有しており、そのうちの３つに沿ってそれぞれ１ずつスリット状開口９７が設けられている。これらの３つのスリット状開口９７は共通の１つの排気空間９８に接続されている。残りの１つの側壁２０ａには、ウエハＷをチャンバ２０内に搬出入するためのシャッタ２５付きの搬出入口２４が設けられているので、ここには、スリット状開口９７は設けられていない。 As shown in FIG. 3, the chamber 20 has four side walls 20a, and one slit-like opening 97 is provided along each of the three side walls 20a. These three slit-shaped openings 97 are connected to one common exhaust space 98. Since the remaining one side wall 20a is provided with a loading / unloading port 24 with a shutter 25 for loading / unloading the wafer W into / from the chamber 20, the slit-shaped opening 97 is not provided here.
　図２に示すように、排気空間９８に面するチャンバ２０の底壁２０ｂには、排気口９９が設けられている。排気口９９には、排気管１００（排気ライン）が接続されている。排気管１００には、排出管９４が合流している。合流点の下流側において、排気管１００には、ミストトラップ（気液分離部）１０１およびバタフライ弁またはダンパ等の流量制御弁１０２が介設されている。排気管１００の下流端は、減圧雰囲気の工場排気系のダクト（図示せず）に接続されている。流量制御弁１０２の開度を調節することにより、排気空間９８及びガードポケット９０内の減圧の度合いを調整することができ、その結果、チャンバ２０内の空間から排気空間９８内に引き込まれるガスの流量、並びにウエハＷの上方の空間からガードポケット９０内に引き込まれるガスの流量を調節することができる。 As shown in FIG. 2, an exhaust port 99 is provided in the bottom wall 20 b of the chamber 20 facing the exhaust space 98. An exhaust pipe 100 (exhaust line) is connected to the exhaust port 99. A discharge pipe 94 joins the exhaust pipe 100. A mist trap (gas-liquid separator) 101 and a flow control valve 102 such as a butterfly valve or a damper are interposed in the exhaust pipe 100 on the downstream side of the junction. The downstream end of the exhaust pipe 100 is connected to a duct (not shown) of a factory exhaust system in a reduced pressure atmosphere. By adjusting the opening degree of the flow control valve 102, the degree of decompression in the exhaust space 98 and the guard pocket 90 can be adjusted. As a result, the amount of gas drawn into the exhaust space 98 from the space in the chamber 20 can be adjusted. The flow rate and the flow rate of the gas drawn into the guard pocket 90 from the space above the wafer W can be adjusted.
　床板９６の上面は、チャンバ２０の側壁２０ａに近づくに従って高さが低くなるように緩やかに傾斜している。床板９６の上面は平滑かつ平坦である。前述したように、床板９６の上面には、ＳＣ２ノズル４１８及び第２ＤＩＷノズル４１９が設けられている部分並びに必要なセンサ類及び補機類が設けられている部分を除き、実質的に凹凸は無く、床板９６近傍をガスが円滑にスリット状開口９７に向けて流れることができる。また、メンテナンス時にチャンバ２０内を洗浄したときに、スリット状開口９７を介して洗浄液がスムーズに排気空間９８に流れ込むようになっている。 The upper surface of the floor plate 96 is gently inclined so that its height decreases as it approaches the side wall 20 a of the chamber 20. The upper surface of the floor board 96 is smooth and flat. As described above, the upper surface of the floor plate 96 is substantially free of unevenness except for a portion where the SC2 nozzle 418 and the second DIW nozzle 419 are provided and a portion where necessary sensors and auxiliary equipment are provided. The gas can flow smoothly toward the slit-shaped opening 97 in the vicinity of the floor plate 96. Further, when the inside of the chamber 20 is cleaned during maintenance, the cleaning liquid flows smoothly into the exhaust space 98 through the slit-shaped opening 97.
　高位置にあるミストガード８０の外周筒部８１の下端は、図５に示すように、ガードポケット９０の上端よりやや上方に位置する。発明者の実験によれば、ミストガード８０が高位置ＨＧにあるときには、外周筒部８１の下端付近には処理液の液滴は殆ど衝突せず、液滴の大半はミストガード８０の比較的高い位置に衝突する。このため、外周筒部８１の下端をガードポケット９０の上端より低くするメリットは殆ど無い。むしろ、外周筒部８１の下端をガードポケット９０の上端より高くすることにより、ミストガード８０の張出部８２と排気カップ５１の張出部５１２との間の空間内の雰囲気（ガス、ミストなど）が、スリット状開口９７またはガードポケット９０内にスムーズに流れ込むようになり、ウエハＷ上方空間に薬液由来の雰囲気や高湿度雰囲気（ミストを含む）が滞留することをより確実に防止することができるというメリットが得られる。 The lower end of the outer peripheral cylindrical portion 81 of the mist guard 80 in the high position is located slightly above the upper end of the guard pocket 90 as shown in FIG. According to the inventor's experiment, when the mist guard 80 is at the high position HG, almost no droplets of the treatment liquid collide with the vicinity of the lower end of the outer peripheral cylindrical portion 81, and most of the droplets are relatively in the mist guard 80. Collide with a high position. For this reason, there is almost no merit which makes the lower end of the outer periphery cylinder part 81 lower than the upper end of the guard pocket 90. FIG. Rather, by making the lower end of the outer cylindrical portion 81 higher than the upper end of the guard pocket 90, the atmosphere (gas, mist, etc.) in the space between the overhang portion 82 of the mist guard 80 and the overhang portion 512 of the exhaust cup 51 is increased. ) Smoothly flows into the slit-shaped opening 97 or the guard pocket 90, and it is possible to more reliably prevent an atmosphere derived from a chemical solution or a high-humidity atmosphere (including mist) from staying in the space above the wafer W. The advantage that you can do it.
　図８に示すように、排気カップ５１の張出部５１２の上面に、ミストガード８０の内面を洗浄するための洗浄液例えばＤＩＷを吐出する複数例えば４つの洗浄液ノズル１１０（ミストガード洗浄機構）が、張出部５１２の円周方向に等間隔に配置されている。４つの洗浄液ノズル１１０のうちの一つが図８に示されている。 As shown in FIG. 8, a plurality of, for example, four cleaning liquid nozzles 110 (mist guard cleaning mechanisms) that discharge cleaning liquid, such as DIW, for cleaning the inner surface of the mist guard 80 are formed on the upper surface of the overhanging portion 512 of the exhaust cup 51. The overhang portions 512 are arranged at equal intervals in the circumferential direction. One of the four cleaning liquid nozzles 110 is shown in FIG.
　ミストガード８０が下限位置である低位置ＬＧに位置しているときに、洗浄液供給部から供給された洗浄液が、洗浄液ノズル１１０からミストガード８０の張出部８２の下面に向けて噴射される。張出部８２の下面は、ミストガード８０の半径方向内側にゆくに従って高くなるように傾斜しているので、噴射された洗浄液は張出部８２の下面に沿って斜め上方に進む。このとき、突起８３と排気カップ５１の張出部５１２の上面とが接しているため、洗浄液は突起８３より先へは進まない。このため、洗浄液ノズル１１０から噴射された洗浄液は、排気カップ５１とミストガード８０の互いに対面する表面の間の空間を満たす。洗浄液ノズル１１０からの洗浄液の吐出を止めると、張出部５１２の上面５１６は半径方向内側にゆくに従って高くなるように傾斜しているので、洗浄液はガードポケット９０に向けて流れ落ちてゆく。上記の洗浄液の流れにより、排気カップ５１とミストガード８０の互いに対面する表面が洗浄される。洗浄液は、排出管９４を介してガードポケット９０から排出され、ミストトラップ１０１に流入し、ミストトラップ１０１に接続されたドレン管を介して工場廃液系に流出する。 When the mist guard 80 is located at the low position LG, which is the lower limit position, the cleaning liquid supplied from the cleaning liquid supply unit is jetted from the cleaning liquid nozzle 110 toward the lower surface of the overhanging portion 82 of the mist guard 80. Since the lower surface of the overhanging portion 82 is inclined so as to become higher inward in the radial direction of the mist guard 80, the sprayed cleaning liquid proceeds obliquely upward along the lower surface of the overhanging portion 82. At this time, since the projection 83 is in contact with the upper surface of the overhanging portion 512 of the exhaust cup 51, the cleaning liquid does not advance beyond the projection 83. For this reason, the cleaning liquid sprayed from the cleaning liquid nozzle 110 fills the space between the surfaces of the exhaust cup 51 and the mist guard 80 facing each other. When the discharge of the cleaning liquid from the cleaning liquid nozzle 110 is stopped, the upper surface 516 of the overhanging portion 512 is inclined so as to become higher inward in the radial direction, so that the cleaning liquid flows down toward the guard pocket 90. Due to the flow of the cleaning liquid, the surfaces of the exhaust cup 51 and the mist guard 80 facing each other are cleaned. The cleaning liquid is discharged from the guard pocket 90 through the discharge pipe 94, flows into the mist trap 101, and flows out to the factory waste liquid system through the drain pipe connected to the mist trap 101.
　上記洗浄液ノズル１１０以外にも、カップ５０の内部および近傍の部材を自動的に洗浄するための洗浄液ノズルを設けることができるが、本明細書ではそれらには言及しない。 In addition to the cleaning liquid nozzle 110, a cleaning liquid nozzle for automatically cleaning the inside and the vicinity of the cup 50 can be provided, but these are not mentioned in this specification.
　次に、上記処理ユニット１６の運転シーケンスの一例について説明する。以下の運転シーケンスは制御装置４（制御部）の記憶部１９に記憶されたプロセスレシピ及び制御プログラムにより、制御装置４の制御の下で自動的に実行される。 Next, an example of the operation sequence of the processing unit 16 will be described. The following operation sequence is automatically executed under the control of the control device 4 by the process recipe and the control program stored in the storage unit 19 of the control device 4 (control unit).
　まず、基板搬送装置１７のアームが搬出入口２４を通してウエハＷをチャンバ２０（処理容器）内に搬入し、ウエハＷは基板保持機構３０の保持部３１により保持される。基板搬送装置１７のアームがチャンバから退出した後、シャッタ２５が閉じられる。ウエハＷの搬入時には、ミストガード８０は低位置に位置している。以下、このウエハＷに対して、一連の処理が行われる。ここでは、ウエハＷに対して、ＤＨＦ洗浄工程、ＤＩＷリンス工程、ＳＣ１洗浄工程、ＤＩＷリンス工程、ＩＰＡ置換工程、乾燥工程が順次行われる場合について説明する。 First, the arm of the substrate transfer device 17 loads the wafer W into the chamber 20 (processing container) through the loading / unloading port 24, and the wafer W is held by the holding unit 31 of the substrate holding mechanism 30. After the arm of the substrate transfer device 17 is withdrawn from the chamber, the shutter 25 is closed. When the wafer W is loaded, the mist guard 80 is positioned at a low position. Thereafter, a series of processes are performed on the wafer W. Here, a case where a DHF cleaning process, a DIW rinsing process, an SC1 cleaning process, a DIW rinsing process, an IPA replacement process, and a drying process are sequentially performed on the wafer W will be described.
　［ＤＨＦ洗浄工程］
　まず、第２ノズルアーム４２２が旋回し（図３の矢印Ｍ２を参照）、ＤＨＦノズル４１３、第１ＤＩＷノズル４１４及びＩＰＡノズル４１５が、低位置ＬＧにあるミストガード８０（図４（ｃ）を参照）の上方を越えて、ウエハＷの中心部の真上に位置する（図９（ａ）を参照）。次いで、ミストガード８０が上昇して高位置ＨＧに位置する（図４（ａ）、図５を参照）。次いで、ウエハＷが回転を開始する。ウエハＷの回転はウエハＷに対する一連の処理が収容するまでずっと継続する。回転するウエハＷの中心部にＤＨＦノズル４１３からＤＨＦが供給される。ＤＨＦは遠心力によりウエハＷの表面をウエハＷの周縁に向かって流れ、ウエハＷの表面全体がＤＨＦの液膜により覆われ、ウエハＷの表面がＤＨＦにより処理される。 [DHF cleaning process]
First, the second nozzle arm 422 pivots (see arrow M2 in FIG. 3), and the DHF nozzle 413, the first DIW nozzle 414, and the IPA nozzle 415 are in the low position LG (see FIG. 4C). ) And above the central portion of the wafer W (see FIG. 9A). Next, the mist guard 80 rises and is positioned at the high position HG (see FIGS. 4A and 5). Next, the wafer W starts to rotate. The rotation of the wafer W continues until a series of processes for the wafer W are accommodated. DHF is supplied from the DHF nozzle 413 to the center of the rotating wafer W. The DHF flows on the surface of the wafer W toward the peripheral edge of the wafer W by centrifugal force, the entire surface of the wafer W is covered with the DHF liquid film, and the surface of the wafer W is processed by DHF.
　ウエハＷから飛散した処理液（ここではＤＨＦ）は、その殆どが第１、第２回転カップ５３，５４の間を通って斜め下方に向けて流れる。その後、処理液は、処理液の種類（酸性、アルカリ性、有機）に応じて予め定められている第１及び第２可動カップ要素５２２，５２３の位置に応じて、液体通路５２５ａ，５２５ｂ，５２５ｃのいずれか（入口が開いているもの）に流入し、次いで液溜まり５２２ａ，５２２ｂ，５２２ｃのいずれかに流入し、排液ライン５２３ａ，５２３ｂ，５２３ｃのいずれかを介して工場廃液系に廃棄される。なお、上記の処理液の流れについては、ウエハＷの表面に処理液が供給される工程全てにおいて共通するため、これ以降の工程における重複説明は省略する。 Most of the processing liquid (in this case, DHF) scattered from the wafer W passes between the first and second rotating cups 53 and 54 and flows obliquely downward. Thereafter, the processing liquid is supplied to the liquid passages 525a, 525b, and 525c according to the positions of the first and second movable cup elements 522 and 523, which are predetermined according to the type (acidic, alkaline, organic) of the processing liquid. Flows into one (the one with the inlet open), then flows into one of the liquid reservoirs 522a, 522b, and 522c, and is discarded into the factory waste liquid system through one of the drain lines 523a, 523b, and 523c. . Note that the flow of the processing liquid is common in all processes in which the processing liquid is supplied to the surface of the wafer W, and therefore redundant description in the subsequent processes is omitted.
　ウエハＷから飛散した処理液の一部は、排気カップ５１の張出部５１２の上方を越えて、チャンバ２０の側壁２０ａに向かおうとする。このような処理液の液滴の殆どが、高位置にあるミストガード８０の内面に衝突し、捕捉される。このため、チャンバ２０の側壁２０ａへの処理液の液滴の付着が防止されるか、あるいは最小限に抑制される。ミストガード８０に捕捉された液は、ミストガード８０の内面上に付着するか、あるいはミストガード８０の内面上を重力により下方に流れてゆく。 A part of the processing liquid scattered from the wafer W tries to go over the overhanging portion 512 of the exhaust cup 51 toward the side wall 20 a of the chamber 20. Most of the droplets of such treatment liquid collide with the inner surface of the mist guard 80 at a high position and are captured. For this reason, adhesion of a droplet of the processing liquid to the side wall 20a of the chamber 20 is prevented or suppressed to a minimum. The liquid captured by the mist guard 80 either adheres to the inner surface of the mist guard 80 or flows downward on the inner surface of the mist guard 80 by gravity.
　遅くともウエハＷに対する最初の処理液（ここではＤＨＦ）の供給が開始されるときには（通常は、基板処理システム１が通常運転されているときには常時）、ＦＦＵ２１からチャンバ２０の内部空間すなわち処理空間内に向けて清浄空気が下向きに吹き出している。この清浄空気の流れは整流板２２により整流され、ウエハＷに向かう。 At the latest, when the supply of the first processing liquid (here, DHF) to the wafer W is started (usually, when the substrate processing system 1 is normally operated), the FFU 21 enters the internal space of the chamber 20, that is, the processing space. Clean air is blowing downwards. This flow of clean air is rectified by the rectifying plate 22 and travels toward the wafer W.
　遅くともウエハＷに対する最初の処理液の供給が開始されるときには、排気ダクト５５３を介して排気通路５５１内が排気されており、これにより、排気カップ５１の張出部５１２の先端と排液カップ５２の張出部５２１ｂの先端との間の隙間から、ウエハＷ近傍のウエハＷ上方空間の雰囲気が吸引される（図５の実線矢印を参照）。排気ダクト５５３を介した排気流量は、ウエハＷがチャンバ２０内に搬入されてから搬出されるまでずっと一定に維持される。従って、ウエハＷの上方の空間にＦＦＵ２１から供給された清浄空気が供給される一方で、ウエハＷの上方の空間内にある雰囲気が排気通路５５１内に引き込まれる。これにより、ウエハＷ近傍のウエハＷ上方空間の雰囲気が清浄に維持される。 At the latest, when the supply of the first processing liquid to the wafer W is started, the inside of the exhaust passage 551 is exhausted through the exhaust duct 553, whereby the tip of the overhanging portion 512 of the exhaust cup 51 and the drain cup 52 are exhausted. The atmosphere in the space above the wafer W in the vicinity of the wafer W is sucked from the gap between the tip of the overhanging portion 521b (see the solid line arrow in FIG. 5). The exhaust flow rate through the exhaust duct 553 is kept constant until the wafer W is loaded into the chamber 20 and then unloaded. Accordingly, the clean air supplied from the FFU 21 is supplied to the space above the wafer W, while the atmosphere in the space above the wafer W is drawn into the exhaust passage 551. Thereby, the atmosphere in the space above the wafer W in the vicinity of the wafer W is maintained clean.
　本実施形態では、液体通路５２５ａ，５２５ｂ，５２５ｃは排気（吸引）されていない。つまり、ウエハＷ近傍のウエハＷ上方空間からカップ５０内に流入するガスは、液体通路５２５ａ，５２５ｂ，５２５ｃには流入せずに、全て排気通路５５１に流入する。液体通路５２５ａ，５２５ｂ，５２５ｃの断面形状を互いに同一にすることは不可能であり、液体通路５２５ａ，５２５ｂ，５２５ｃの流路抵抗は互いに異なる。液体通路５２５ａ，５２５ｂ，５２５ｃを吸引している場合、この流路抵抗の相違を原因として、開放されている液体通路に応じて、ウエハＷ近傍のウエハＷ上方空間からカップ５０内に流入するガスの流量が異なることになる。本実施形態ではこのような問題が生じず、ウエハＷ近傍のウエハＷ上方空間におけるガスの流れが、処理に使用している処理液の種類に関わらず一定に維持される。このことは処理の均一性の向上に寄与する。 In this embodiment, the liquid passages 525a, 525b, and 525c are not exhausted (suctioned). That is, the gas that flows into the cup 50 from the space above the wafer W near the wafer W does not flow into the liquid passages 525a, 525b, and 525c, but flows into the exhaust passage 551. The liquid passages 525a, 525b, and 525c cannot have the same cross-sectional shape, and the flow passage resistances of the liquid passages 525a, 525b, and 525c are different from each other. When the liquid passages 525a, 525b, and 525c are sucked, the gas flowing into the cup 50 from the space above the wafer W in the vicinity of the wafer W depending on the opened liquid passage due to the difference in flow path resistance. The flow rate will be different. In this embodiment, such a problem does not occur, and the gas flow in the upper space of the wafer W in the vicinity of the wafer W is maintained constant regardless of the type of processing liquid used for processing. This contributes to an improvement in processing uniformity.
　遅くともウエハＷに対する最初の処理液の供給が開始されるときには、排出管９４及び排気管１００を介してガードポケット９０の内部空間および排気空間９８が吸引（排気）されている。この排気は、ウエハＷがチャンバ２０内に搬入されてから搬出されるまでずっと維持される。この排気により、床板９６より上方のミストガード８０とチャンバ２０の側壁２０ａとの間の空間、並びにミストガード８０の張出部８２と排気カップ５１の張出部５１２の間の空間に存在する雰囲気（ガス、ミスト等）が、ガードポケット９０内に吸い込まれるか、あるいは、スリット状開口９７を介して排気空間９８内に吸い込まれる（図５及び図６の実線矢印を参照）。これにより上記の空間に汚染性または高湿度の雰囲気が滞留することを防止することができる。 At the latest, when the supply of the first processing liquid to the wafer W is started, the internal space of the guard pocket 90 and the exhaust space 98 are sucked (exhausted) through the exhaust pipe 94 and the exhaust pipe 100. This evacuation is maintained until the wafer W is loaded into the chamber 20 and then unloaded. By this exhaust, the atmosphere existing in the space between the mist guard 80 above the floor plate 96 and the side wall 20a of the chamber 20 and in the space between the overhanging portion 82 of the mist guard 80 and the overhanging portion 512 of the exhaust cup 51. (Gas, mist, etc.) is sucked into the guard pocket 90 or sucked into the exhaust space 98 through the slit-shaped opening 97 (see solid line arrows in FIGS. 5 and 6). Thereby, it is possible to prevent a pollutant or high humidity atmosphere from staying in the space.
　ミストガード８０の内面上を重力により下方に流れる液滴は、ガードポケット９０内に落ち、排出管９４及び排気管１００を通って流れ、ミストトラップ１０１のドレン１０３から図示しない工場廃液系に排出される。 A droplet that flows downward due to gravity on the inner surface of the mist guard 80 falls into the guard pocket 90, flows through the discharge pipe 94 and the exhaust pipe 100, and is discharged from the drain 103 of the mist trap 101 to a factory waste liquid system (not shown). The
　［ＤＩＷリンス工程（１回目）］
　ＤＨＦ洗浄工程が終了したら、ミストガード８０を高位置ＨＧに維持したまま、第１ＤＩＷノズル４１４からのＤＩＷの吐出を開始するともに、その直後にＤＨＦノズル４１３からのＤＨＦの吐出を止める。このＤＩＷにより、ウエハＷ上に残留するＤＨＦと反応生成物が洗い流される。 [DIW rinse process (first time)]
When the DHF cleaning process is completed, the discharge of DIW from the first DIW nozzle 414 is started while the mist guard 80 is maintained at the high position HG, and immediately after that, the discharge of DHF from the DHF nozzle 413 is stopped. By this DIW, DHF and reaction products remaining on the wafer W are washed away.
　［ＳＣ１洗浄工程］
　ＤＩＷリンス工程からＳＣ１洗浄工程への移行にあたって、まず最初にノズルアームの入れ替え（ノズル入替操作）が行われる（図９（ａ）～（ｃ）を参照）。第１ＤＩＷノズル４１４からＤＩＷを吐出し続けたまま（ウエハＷの表面のＤＩＷの液膜切れが生じない範囲で吐出流量を減少させてもよい）、ミストガード８０を下げ中間位置ＭＧに位置させ、さらに、ノズルアーム４２１，４２２を上昇させ高位置ＨＮに位置させる（図４（ｂ）を参照）。次いで、第１ノズルアーム４２１を旋回させ、ＡＳノズル４１２をウエハＷの中心部の真上に位置させる。このとき、第１ノズルアーム４２１の先端部にあるノズルと第２ノズルアーム４２２の先端部にあるノズル同士が衝突しないように、ＳＣ１ノズル４１１がウエハＷの中心部の真上に到達する直前から、第２ノズルアーム４２２の第１ＤＩＷノズル４１４からＤＩＷを吐出し続けたままで第２ノズルアーム４２２の退避旋回、すなわち第２ノズルアーム４２２のホームポジションに向けた移動を開始する（図９（ｂ）を参照）。また、ＡＳノズル４１２がウエハＷの中心部の真上に到達するやや前の時点で、ＡＳノズル４１２からＤＩＷの吐出を開始する。なおこのとき、ＡＳノズル４１２の二流体生成機能を用いずに（すなわち窒素ガスをＡＳノズル４１２に供給しないで）、ＡＳノズル４１２からミスト化されていないＤＩＷの吐出を行う。ウエハＷの中心部にＡＳノズル４１２からＤＩＷの供給が開始された後、第１ＤＩＷノズル４１４からのＤＩＷの吐出が停止される。ＡＳノズル４１２がウエハＷの中心部の真上に位置し、第１ＤＩＷノズル４１４がホームポジションに戻ったら（図９（ｃ）を参照）、ミストガード８０を上昇させて高位置ＨＧに位置させ、さらに、第２ノズルアーム４２２を低位置ＬＮに位置させる（図４（ａ）を参照）。 [SC1 cleaning process]
In the transition from the DIW rinse process to the SC1 cleaning process, first, the nozzle arm is replaced (nozzle replacement operation) (see FIGS. 9A to 9C). While continuing to discharge DIW from the first DIW nozzle 414 (the discharge flow rate may be reduced within the range where DIW liquid film breakage does not occur on the surface of the wafer W), the mist guard 80 is lowered to the intermediate position MG, Further, the nozzle arms 421 and 422 are raised and positioned at the high position HN (see FIG. 4B). Next, the first nozzle arm 421 is turned, and the AS nozzle 412 is positioned directly above the center of the wafer W. At this time, immediately before SC1 nozzle 411 reaches directly above the center of wafer W so that the nozzles at the tip of first nozzle arm 421 and the nozzles at the tip of second nozzle arm 422 do not collide with each other. The second nozzle arm 422 starts to retreat, that is, moves toward the home position of the second nozzle arm 422 while continuing to discharge DIW from the first DIW nozzle 414 of the second nozzle arm 422 (FIG. 9B). See). In addition, when the AS nozzle 412 reaches just above the center of the wafer W, DIW discharge is started from the AS nozzle 412. At this time, without using the two-fluid generation function of the AS nozzle 412 (that is, without supplying nitrogen gas to the AS nozzle 412), DIW that has not been misted is discharged from the AS nozzle 412. After the supply of DIW from the AS nozzle 412 to the center portion of the wafer W is started, the discharge of DIW from the first DIW nozzle 414 is stopped. When the AS nozzle 412 is positioned directly above the center of the wafer W and the first DIW nozzle 414 returns to the home position (see FIG. 9C), the mist guard 80 is raised and positioned at the high position HG. Further, the second nozzle arm 422 is positioned at the low position LN (see FIG. 4A).
　このようにＡＳノズル４１２からウエハＷ中心部付近にＤＩＷを供給している期間と、第１ＤＩＷノズル４１４からウエハＷ中心部付近にＤＩＷを供給している期間とを重複させることにより、ウエハＷ表面からＤＩＷの液膜が部分的に消失することによりウエハＷ表面の一部が大気雰囲気に晒されること（ウオーターマーク、パーティクル発生の原因となる）を防止することができる。この効果を達成可能である限りにおいて、ＡＳノズル４１２からのＤＩＷの吐出開始タイミングおよび第１ＤＩＷノズル４１４からのＤＩＷの吐出停止タイミングは任意である。 Thus, by overlapping the period in which DIW is supplied from the AS nozzle 412 to the vicinity of the center of the wafer W and the period in which DIW is supplied from the first DIW nozzle 414 to the vicinity of the center of the wafer W, the surface of the wafer W is overlapped. As a result, the liquid film of DIW partially disappears, so that a part of the surface of the wafer W can be prevented from being exposed to the air atmosphere (causing the generation of water marks and particles). As long as this effect can be achieved, the DIW discharge start timing from the AS nozzle 412 and the DIW discharge stop timing from the first DIW nozzle 414 are arbitrary.
　なお、ミストガード８０が中間位置ＭＧに位置しているときには、高位置ＨＧに位置しているときと比較して、ミストガード８０の液滴飛散遮断機能が低下している。このため、ウエハＷからの液滴の飛散量、飛散高さ等を減少させるため、ウエハＷの回転速度を減少させること、及び／又はＡＳノズル４１２及び第１ＤＩＷノズル４１４からのＤＩＷの吐出流量を減少させること（ウエハＷの表面露出が生じない範囲で）、ＡＳノズル４１２と第１ＤＩＷノズル４１４とが同時にＤＩＷを吐出している時間をできるだけ短くすること（別々のノズルから吐出された液がウエハＷ上で衝突するとスプラッシュが生じやすいため）等の対策を講じることが好ましい。 In addition, when the mist guard 80 is located at the intermediate position MG, the droplet scattering blocking function of the mist guard 80 is lower than when it is located at the high position HG. For this reason, in order to reduce the amount of droplets scattered from the wafer W, the height of the droplets, etc., the rotational speed of the wafer W is decreased and / or the discharge flow rate of DIW from the AS nozzle 412 and the first DIW nozzle 414 is reduced. Decrease (in the range where the surface exposure of the wafer W does not occur), and shorten the time during which the AS nozzle 412 and the first DIW nozzle 414 simultaneously discharge DIW as much as possible (the liquid discharged from different nozzles is the wafer). It is preferable to take measures such as splashing easily upon collision on W).
　次いで、ＳＣ１ノズル４１１からウエハＷ中心部にＳＣ１の供給を開始し、その直後にＡＳノズル４１２からのＤＩＷの吐出を停止する。予め定められた時間だけＳＣ１をウエハＷに供給することにより、ウエハＷにＳＣ１洗浄が施される。このときも、ウエハＷから飛散する処理液の液滴は、ミストガード８０により捕捉される。ＳＣ１洗浄工程を実施しているときの排気動作は、ＤＨＦ洗浄工程を実施しているときと同じであるので、重複説明は省略する。 Next, supply of SC1 from the SC1 nozzle 411 to the center of the wafer W is started, and immediately after that, the discharge of DIW from the AS nozzle 412 is stopped. By supplying SC1 to the wafer W for a predetermined time, the SC1 cleaning is performed on the wafer W. Also at this time, the droplets of the processing liquid scattered from the wafer W are captured by the mist guard 80. Since the exhaust operation when the SC1 cleaning process is performed is the same as that when the DHF cleaning process is performed, duplicate description is omitted.
　［ＤＩＷリンス工程（２回目）］
　ＳＣ１洗浄工程が終了したら、ミストガード８０を高位置ＨＧに維持したまま、ＡＳノズル４１２からのＤＩＷの吐出を開始するとともに、その直後にＳＣ１ノズル４１１からのＳＣ１の吐出を止める。このＤＩＷにより、ウエハＷ上に残留するＳＣ１と反応生成物が洗い流される。 [DIW rinse process (second time)]
When the SC1 cleaning process is completed, the discharge of DIW from the AS nozzle 412 is started while the mist guard 80 is maintained at the high position HG, and immediately after that, the discharge of SC1 from the SC1 nozzle 411 is stopped. By this DIW, the SC1 and the reaction product remaining on the wafer W are washed away.
　［ＩＰＡ置換工程］
　ＤＩＷリンス工程（２回目）からＩＰＡ置換工程への移行にあたって、まず最初に、ノズルアームの入れ替えが行われる。ＡＳノズル４１２からＤＩＷを吐出し続けたまま（ウエハＷの表面のＤＩＷの液膜切れが生じない範囲で吐出流量を減少させてもよい）、ミストガード８０を下げ、中間位置ＭＧに位置させ、さらに、ノズルアーム４２１，４２２を上昇させ高位置ＨＮに位置させる（図４（ｂ）を参照）。次いで、第２ノズルアーム４２２を旋回させ、第１ＤＩＷノズル４１４をウエハＷの中心部の真上に位置させる。このとき、第１ノズルアーム４２１の先端部にあるノズルと第２ノズルアーム４２２の先端部にあるノズル同士が衝突しないように、第１ＤＩＷノズル４１４がウエハＷの中心部の真上に到達する直前から、第１ノズルアーム４２１のＡＳノズル４１２からＤＩＷを吐出し続けたままで、ノズルアーム４２１の退避旋回、すなわち第２ノズルアーム４２１のホームポジションに向けた移動を開始する（図９（ｄ）を参照）。また、第１ＤＩＷノズル４１４がウエハＷの中心部の真上に到達するやや前の時点で、第１ＤＩＷノズル４１４からＤＩＷの吐出を開始する。なおこのとき、ウエハＷの中心部に第１ＤＩＷノズル４１４からＤＩＷの供給が開始された後、ＡＳノズル４１２からのＤＩＷの吐出が停止される。 [IPA replacement process]
In the transition from the DIW rinse process (second time) to the IPA replacement process, first, the nozzle arm is replaced. While continuing to discharge DIW from the AS nozzle 412 (the discharge flow rate may be reduced in a range where the DIW liquid film breakage on the surface of the wafer W may not occur), the mist guard 80 is lowered and positioned at the intermediate position MG. Further, the nozzle arms 421 and 422 are raised and positioned at the high position HN (see FIG. 4B). Next, the second nozzle arm 422 is swung so that the first DIW nozzle 414 is positioned directly above the center of the wafer W. At this time, immediately before the first DIW nozzle 414 reaches directly above the center of the wafer W so that the nozzle at the tip of the first nozzle arm 421 and the nozzle at the tip of the second nozzle arm 422 do not collide with each other. Then, while the DIW is continuously being discharged from the AS nozzle 412 of the first nozzle arm 421, the retraction turning of the nozzle arm 421, that is, the movement of the second nozzle arm 421 toward the home position is started (FIG. 9D). reference). Also, when the first DIW nozzle 414 reaches a position just above the center of the wafer W, the DIW discharge from the first DIW nozzle 414 is started. At this time, the supply of DIW from the first DIW nozzle 414 to the central portion of the wafer W is started, and then the discharge of DIW from the AS nozzle 412 is stopped.
　次に、図９（ｄ）の状態で、ＩＰＡノズル４１５からＩＰＡの吐出を開始するとともに、その直後に第１ＤＩＷノズル４１４からのからのＤＩＷの吐出を止める。ＩＰＡの吐出開始と同時、あるいはそのやや後に、ミストガード８０を下降させ、低位置ＬＧに位置させる。供給されたＩＰＡによりウエハＷ表面上にあるＤＩＷが置換され、ウエハＷの表面がＩＰＡの液膜により覆われる。 Next, in the state of FIG. 9 (d), the discharge of IPA from the IPA nozzle 415 is started, and immediately after that, the discharge of DIW from the first DIW nozzle 414 is stopped. At the same time or slightly after the start of IPA discharge, the mist guard 80 is lowered and positioned at the low position LG. The supplied IPA replaces DIW on the surface of the wafer W, and the surface of the wafer W is covered with a liquid film of IPA.
　［乾燥工程］
　第１ノズルアーム４２１がホームポジションに戻った後、第３ノズルアーム４２３を旋回させ、第１窒素ガスノズル４１６をウエハＷの中心部の真上に位置させる。第１窒素ガスノズル４１６がウエハＷの中心部の真上に近づいてきたら、ＩＰＡノズル４１５からＩＰＡの吐出を継続しつつ第２ノズルアーム４２２をホームポジションに向けて（ウエハＷの周縁部に向けて）移動させ始める。第１窒素ガスノズル４１６がウエハＷの中心部の真上に位置したときに第１窒素ガスノズル４１６から窒素ガスの吐出を開始する。次いで、第２窒素ガスノズル４１７からの窒素ガスの吐出を開始し、第３ノズルアーム４２３をホームポジションに向けて（ウエハＷの周縁部に向けて）移動させ始める（図９（ｆ）を参照）。 [Drying process]
After the first nozzle arm 421 returns to the home position, the third nozzle arm 423 is turned to position the first nitrogen gas nozzle 416 directly above the center of the wafer W. When the first nitrogen gas nozzle 416 approaches the center of the wafer W, the second nozzle arm 422 is directed toward the home position (toward the peripheral edge of the wafer W while continuing to discharge IPA from the IPA nozzle 415). ) Start moving. When the first nitrogen gas nozzle 416 is positioned immediately above the center of the wafer W, discharge of nitrogen gas from the first nitrogen gas nozzle 416 is started. Next, the discharge of the nitrogen gas from the second nitrogen gas nozzle 417 is started, and the third nozzle arm 423 is moved toward the home position (toward the peripheral edge of the wafer W) (see FIG. 9F). .
　ＩＰＡノズル４１５から吐出されるＩＰＡのウエハＷ表面上への衝突位置が、第２窒素ガスノズル４１７から吐出される窒素ガスのウエハＷ表面上への衝突位置よりもウエハＷの半径方向外側に維持されるように、第１ノズルアーム４２１及び第３ノズルアーム４２３の旋回運動が制御される。これにより、第２窒素ガスノズル４１７から吐出した窒素ガスがＩＰＡの液膜をウエハ周縁方向に押しやり、ウエハＷ表面に形成される円形の乾燥領域が中心部から周縁部に向けて徐々に広がってゆく。ＩＰＡノズル４１５がウエハＷの周縁を通過した後、第２窒素ガスノズル４１７がウエハＷの周縁を通過する時点において、ウエハＷの表面全域が乾燥する。以上により乾燥工程が終了する。ノズルアーム４２１、４２３はそれぞれのホームポジションに戻り、そこで待機する。 The collision position of the IPA discharged from the IPA nozzle 415 on the surface of the wafer W is maintained radially outside the collision position of the nitrogen gas discharged from the second nitrogen gas nozzle 417 on the surface of the wafer W. As described above, the turning motion of the first nozzle arm 421 and the third nozzle arm 423 is controlled. Thus, the nitrogen gas discharged from the second nitrogen gas nozzle 417 pushes the IPA liquid film in the wafer peripheral direction, and the circular dry region formed on the surface of the wafer W gradually spreads from the central portion toward the peripheral portion. go. After the IPA nozzle 415 passes the periphery of the wafer W, the entire surface of the wafer W is dried when the second nitrogen gas nozzle 417 passes the periphery of the wafer W. Thus, the drying process is completed. The nozzle arms 421 and 423 return to their home positions and wait there.
　この乾燥工程においては、ミストガード８０が低位置ＬＧに位置している。このため、ウエハＷの上方の空間からスリット状開口９７に向かうガスの流れがミストガード８０により妨げられない。これにより、ウエハＷの上方の空間に前工程で飛散したＤＩＷのミストまたは蒸気が滞留することが防止または低減される。このためウエハＷの上方の空間を低湿度に維持することができ、乾燥効率を向上させることができる。なお、ＩＰＡが飛散してチャンバ２０の側壁２０ａに付着したとしても、高揮発性のＩＰＡは短時間で蒸発してチャンバ２０外部に排気されるため、チャンバ２０内の雰囲気に悪影響を及ぼすことはない。 In this drying process, the mist guard 80 is located at the low position LG. Therefore, the gas flow from the space above the wafer W toward the slit-shaped opening 97 is not hindered by the mist guard 80. This prevents or reduces the mist or vapor of DIW scattered in the previous process in the space above the wafer W. For this reason, the space above the wafer W can be maintained at a low humidity, and the drying efficiency can be improved. Even if IPA scatters and adheres to the side wall 20a of the chamber 20, the highly volatile IPA evaporates in a short time and is exhausted to the outside of the chamber 20, so that the atmosphere inside the chamber 20 is adversely affected. Absent.
　なお、乾燥工程を実施している間に、先に図８を参照して説明した手順により、低位置ＬＧに位置しているミストガード８０に対して洗浄処理が行われ、ミストガード８０の表面（ウエハＷ側の面）に付着している薬液成分が除去される。 During the drying process, the cleaning process is performed on the mist guard 80 located at the low position LG according to the procedure described above with reference to FIG. The chemical component adhering to (the wafer W side surface) is removed.
　乾燥工程の終了後、搬入時と逆の手順により、処理済みのウエハＷがチャンバ２０の外部に搬出される。 After completion of the drying process, the processed wafer W is carried out of the chamber 20 by the reverse procedure of loading.
　なお、上記の運転シーケンスには含まれなかったが、図７に示すように、ミストガード８０を高位置ＨＧにした状態で、ＳＣ２ノズル４１８からウエハＷの中心部にＳＣ２液を供給してＳＣ２洗浄を行い、その後に、第２ＤＩＷノズル４１９からウエハＷの中心部にＤＩＷを供給してリンス処理を行う工程を運転シーケンスに含めてもよい。 Although not included in the above operation sequence, as shown in FIG. 7, the SC2 liquid is supplied from the SC2 nozzle 418 to the center of the wafer W with the mist guard 80 at the high position HG. The operation sequence may include a step of performing a rinse process by supplying DIW from the second DIW nozzle 419 to the central portion of the wafer W after the cleaning.
　上記の実施形態によれば、昇降可能なミストガード８０を設けることにより、上昇したミストガード８０により飛散する薬液成分または水分を遮蔽することにより、薬液成分または水分がチャンバ２０の内壁面、あるいはチャンバ内機器に付着することを効率良く防止することができる。また、ミストガード８０が張出部８２を有しているため、上記の遮蔽効果を一層高めることができる。また、ミストガード８０を下降させておくことにより、例えば乾燥時にウエハＷ上方の雰囲気の排気がミストガード８０により妨げられないので、乾燥効率を向上させることができる。 According to the above embodiment, by providing the mist guard 80 that can be moved up and down, the chemical component or moisture that is scattered by the raised mist guard 80 is shielded, so that the chemical component or moisture can be contained in the inner wall surface of the chamber 20 or the chamber. It can prevent efficiently adhering to an internal apparatus. Moreover, since the mist guard 80 has the overhang | projection part 82, said shielding effect can be improved further. Further, by lowering the mist guard 80, for example, the exhaust of the atmosphere above the wafer W is not hindered by the mist guard 80 during drying, so that the drying efficiency can be improved.
　上記実施形態においては、高位置ＨＧにあるミストガード８０の外周筒部８１の下端部はガードポケット９０の外にあったが、中にあってもよい。この場合、図１０に示すように、外周筒部８１の下端部に通気開口８７を設けることができる。好ましくは、ミストガード８０の周方向に沿って延びる複数の通気開口８７が、ミストガード８０の周方向に間隔を空けて設けられる。通気開口８７を設けることにより、ミストガード８０のウエハ側の空間からチャンバ２０の側壁２０ａにガスを通過させてスリット状開口９７に流入させることができる。 In the above embodiment, the lower end portion of the outer peripheral cylindrical portion 81 of the mist guard 80 at the high position HG is outside the guard pocket 90, but it may be inside. In this case, as shown in FIG. 10, a ventilation opening 87 can be provided at the lower end portion of the outer peripheral cylindrical portion 81. Preferably, a plurality of ventilation openings 87 extending along the circumferential direction of the mist guard 80 are provided at intervals in the circumferential direction of the mist guard 80. By providing the ventilation opening 87, gas can be passed from the space on the wafer side of the mist guard 80 to the side wall 20 a of the chamber 20 and flow into the slit-shaped opening 97.
　上記実施形態においては、排気カップ５１がカップ５０を構成する最外周の不動のカップ形構成要素であったが、これには限定されない。カップ５０から排気カップ５１を取り除き、排液カップ５２をカップ５０を構成する最外周の不動のカップ形構成要素としてもよい。この場合、排液カップ５２の外側に隣接してミストガード８０が設けられる。この場合の排液カップ５２とミストガード８０との位置関係は、図４において、排気カップ５１を排液カップ（５２）と見なすことにより理解できる。なお、この場合、例えば、排液ライン５２３ａ、５２３ｂ、５２３ｃを構成する配管は工場排気系（または吸引ポンプ若しくはエジェクタ等の吸引装置）に接続されて排気ラインとしての役割も持たされる。この場合、排気ラインに、ミストトラップ等の気液分離装置が設けられ、ミストトラップで分離された液体は例えば工場廃液系に廃棄される。 In the above embodiment, the exhaust cup 51 is the outermost stationary cup-shaped component constituting the cup 50, but is not limited to this. The exhaust cup 51 may be removed from the cup 50, and the drain cup 52 may be an outermost stationary cup-shaped component constituting the cup 50. In this case, a mist guard 80 is provided adjacent to the outside of the drainage cup 52. The positional relationship between the drain cup 52 and the mist guard 80 in this case can be understood by considering the exhaust cup 51 as the drain cup (52) in FIG. In this case, for example, the pipes constituting the drain lines 523a, 523b, and 523c are connected to a factory exhaust system (or a suction device such as a suction pump or an ejector) to serve as an exhaust line. In this case, a gas-liquid separation device such as a mist trap is provided in the exhaust line, and the liquid separated by the mist trap is discarded, for example, into a factory waste liquid system.
　図１１を参照してミストガード８０の洗浄処理について他の実施形態について説明する。図１１において、図１～図１０を参照して既に説明した部材と同一部材については、同一符号を付し、重複説明は省略する。 Referring to FIG. 11, another embodiment of the cleaning process for the mist guard 80 will be described. In FIG. 11, the same members as those already described with reference to FIGS. 1 to 10 are denoted by the same reference numerals, and redundant description is omitted.
　図１１に示すミストガード８０Ａは、図８に示すミストガード８０に対して、張出部８２の下面にリング状（円環状）の隙間形成部８２３（下方に突出している部分）を設けた点が異なる。隙間形成部８２３は、ミストガード８０Ａの外周筒部８１の内周面から半径方向内側に向けて延びている。この隙間形成部８２３を設けることにより、隙間形成部８２３の下面とこれと対向する排気カップ５１の張出部５１２の上面との間の隙間Ｇ１が、ミストガード８０Ａの隙間形成部８２３が設けられていない部分（隙間Ｇ１より半径方向内側）とこれと対向する排気カップ５１の張出部５１２の上面との間の隙間Ｇ２よりも狭くなっている。 The mist guard 80A shown in FIG. 11 is different from the mist guard 80 shown in FIG. 8 in that a ring-shaped (annular) gap forming portion 823 (portion protruding downward) is provided on the lower surface of the overhang portion 82. Is different. The gap forming portion 823 extends radially inward from the inner peripheral surface of the outer peripheral cylindrical portion 81 of the mist guard 80A. By providing this gap forming portion 823, a gap G1 between the lower surface of the gap forming portion 823 and the upper surface of the overhanging portion 512 of the exhaust cup 51 opposite thereto is provided as the gap forming portion 823 of the mist guard 80A. It is narrower than the gap G2 between the non-exposed portion (inward in the radial direction from the gap G1) and the upper surface of the overhanging portion 512 of the exhaust cup 51 facing this.
　隙間Ｇ１の大きさは、隙間Ｇ１の全域に後述する洗浄液が広がることができる程度には大きく、しかしながら隙間Ｇ１から容易には洗浄液が流出しない程度に小さいような値とすることが好ましく、例えば０．１～０．５ｍｍ程度である。 The size of the gap G1 is preferably set to a value that is large enough to allow the cleaning liquid to be described later to spread over the entire area of the gap G1, but small enough that the cleaning liquid does not easily flow out of the gap G1, for example, 0 .About 1 to 0.5 mm.
　隙間形成部８２３は、ミストガード８０Ａの張出部８２の全周にわたって円周方向に連続的に延びている。隙間形成部８２３の下面には、洗浄液ノズル１１０から供給された洗浄液を隙間Ｇ２に導くための複数の径方向溝８２４が形成されている。径方向溝８２４の溝底面（溝の上端面）とこれに対向する排気カップ５１の張出部５１２の上面との間の隙間は、隙間Ｇ１より広い。径方向溝８２４は、半径方向内側へ向けて延び、隙間Ｇ２と連通している。径方向溝８２４は洗浄液ノズル１１０と同じ数設けられている。洗浄液ノズル１１０は、径方向溝８２４に対向する位置において張出部５１２に設けられ、径方向溝８２４に向けて洗浄液を供給する。径方向溝８２４は、厳密に径方向に延びている必要はなく、径方向に対して角度を成して延びていても構わない。 The gap forming portion 823 continuously extends in the circumferential direction over the entire circumference of the overhang portion 82 of the mist guard 80A. A plurality of radial grooves 824 for guiding the cleaning liquid supplied from the cleaning liquid nozzle 110 to the gap G2 are formed on the lower surface of the gap forming portion 823. The gap between the groove bottom surface (the upper surface of the groove) of the radial groove 824 and the upper surface of the overhanging portion 512 of the exhaust cup 51 facing the groove is wider than the gap G1. The radial groove 824 extends inward in the radial direction and communicates with the gap G2. The same number of radial grooves 824 as the cleaning liquid nozzles 110 are provided. The cleaning liquid nozzle 110 is provided in the overhanging portion 512 at a position facing the radial groove 824 and supplies the cleaning liquid toward the radial groove 824. The radial groove 824 does not have to extend strictly in the radial direction, and may extend at an angle with respect to the radial direction.
　リング状の隙間形成部８２３の下面には、円周方向にミストガード８０Ａの全周にわたって延びる円周溝（周方向溝）８２５が形成されている。この円周溝８２５は全ての径方向溝８２４と交差し、全ての径方向溝８２４と連通している。円周溝８２５の半径方向位置は、洗浄液ノズル１１０よりも半径方向内側にある。 A circumferential groove (circumferential groove) 825 extending in the circumferential direction over the entire circumference of the mist guard 80A is formed on the lower surface of the ring-shaped gap forming portion 823. The circumferential groove 825 intersects all the radial grooves 824 and communicates with all the radial grooves 824. The circumferential position of the circumferential groove 825 is radially inward of the cleaning liquid nozzle 110.
　隙間形成部８２３、径方向溝８２４、円周溝８２５を設けたことの効果について以下に説明する。 The effect of providing the gap forming portion 823, the radial groove 824, and the circumferential groove 825 will be described below.
　ミストガード８０Ａを図１１に示すように前述した低位置ＬＧに位置させ、洗浄液ノズル１１０から洗浄液としてのＤＩＷを吐出させる。各洗浄液ノズル１１０から吐出された洗浄液は、対応する径方向溝８２４を通って、隙間Ｇ２内に流入する。 The mist guard 80A is positioned at the above-described low position LG as shown in FIG. 11, and DIW as the cleaning liquid is discharged from the cleaning liquid nozzle 110. The cleaning liquid discharged from each cleaning liquid nozzle 110 flows into the gap G <b> 2 through the corresponding radial groove 824.
　このとき、洗浄液ノズル１１０から吐出される洗浄液の流量は、隙間Ｇ１を通ってガードポケット９０内に流出する洗浄液の流量よりも多くしている。このため、隙間Ｇ２を全周にわたって洗浄液で満たすことができる。このとき、ミストガード８０Ａの張出部８２の内周端にある突起８３の下面と排気カップ５１の張出部５１２の上面とが接しているため、洗浄液が突起８３の下面と張出部５１２の上面との間から漏出することは殆ど無い。このため、隙間Ｇ２内の周方向全域を均一に洗浄液で満たすことができる。 At this time, the flow rate of the cleaning liquid discharged from the cleaning liquid nozzle 110 is larger than the flow rate of the cleaning liquid flowing out into the guard pocket 90 through the gap G1. For this reason, the gap G2 can be filled with the cleaning liquid over the entire circumference. At this time, since the lower surface of the projection 83 at the inner peripheral end of the overhang portion 82 of the mist guard 80A and the upper surface of the overhang portion 512 of the exhaust cup 51 are in contact with each other, the cleaning liquid is in contact with the lower surface of the projection 83 and the overhang portion 512. There is almost no leakage from between the upper surface of the glass. For this reason, the whole circumferential direction in the gap G2 can be uniformly filled with the cleaning liquid.
　突起８３の下面が張出部５１２の上面に接していなくてもよい。この場合、洗浄液ノズル１１０から吐出する洗浄液の流量は、隙間Ｇ１を通ってガードポケット９０内に流出する洗浄液の流量と、突起８３と張出部５１２の上面との間の隙間から流出する洗浄液の流量の合計よりも多くすればよい。 The lower surface of the protrusion 83 may not be in contact with the upper surface of the overhanging portion 512. In this case, the flow rate of the cleaning liquid discharged from the cleaning liquid nozzle 110 is the flow rate of the cleaning liquid flowing out into the guard pocket 90 through the gap G1 and the cleaning liquid flowing out from the gap between the protrusion 83 and the upper surface of the overhanging portion 512. What is necessary is just to increase more than the sum total of flow volume.
　径方向溝８２４内を流れる洗浄液は円周溝８２５にも流入して円周方向に広がってゆく。隙間Ｇ２、径方向溝８２４及び円周溝８２５が洗浄液で満たされると、狭い隙間Ｇ１内への洗浄液の拡散も進行してゆく。ミストガード８０Ａの張出部８２の下面と排気カップ５１の張出部５１２の上面との間の空間の全域（すなわち隙間Ｇ１＋Ｇ２）が洗浄液で満たされる。この洗浄液に、張出部８２の下面及び張出部５１２の上面に付着した薬液及び反応生成物等の付着物が溶け込む。洗浄液に溶け込んだ付着物は、洗浄液とともにガードポケット９０内へ排出される。このようにして、ミストガード８０Ａの表面（ウエハＷ側の面）を洗浄することができる。 The cleaning liquid flowing in the radial groove 824 flows into the circumferential groove 825 and spreads in the circumferential direction. When the gap G2, the radial groove 824, and the circumferential groove 825 are filled with the cleaning liquid, the cleaning liquid diffuses into the narrow gap G1. The entire space (that is, the gap G1 + G2) between the lower surface of the overhanging portion 82 of the mist guard 80A and the upper surface of the overhanging portion 512 of the exhaust cup 51 is filled with the cleaning liquid. The cleaning liquid dissolves adhering substances such as a chemical solution and a reaction product adhering to the lower surface of the overhang portion 82 and the upper surface of the overhang portion 512. Deposits dissolved in the cleaning liquid are discharged into the guard pocket 90 together with the cleaning liquid. In this manner, the surface of the mist guard 80A (the surface on the wafer W side) can be cleaned.
　その後、ミストガード８０Ａを上昇させると、ミストガード８０Ａの張出部８２の下面と排気カップ５１の張出部５１２の上面との間の空間にある洗浄液が、傾斜面である張出部５１２の上面に沿ってガードポケット９０内に流れ込む。以上により洗浄が終了する。上記の洗浄操作を繰り返し行ってもよい。 After that, when the mist guard 80A is raised, the cleaning liquid in the space between the lower surface of the overhanging portion 82 of the mist guard 80A and the upper surface of the overhanging portion 512 of the exhaust cup 51 is removed from the overhanging portion 512 that is an inclined surface. It flows into the guard pocket 90 along the upper surface. This completes the cleaning. The above washing operation may be repeated.
　図１１の実施形態のうちの上述した構成によれば、ミストガード８０Ａの張出部８２の下面と排気カップ５１の張出部５１２の上面との間の空間を満遍なく洗浄液で満たすことができ、張出部８２の下面及び張出部５１２の上面の洗浄対象面の全域をムラ無く洗浄することができる。 According to the above-described configuration in the embodiment of FIG. 11, the space between the lower surface of the overhanging portion 82 of the mist guard 80A and the upper surface of the overhanging portion 512 of the exhaust cup 51 can be filled with the cleaning liquid evenly. The entire surface of the surface to be cleaned on the lower surface of the overhang portion 82 and the upper surface of the overhang portion 512 can be cleaned without unevenness.
　上記実施形態においては、隙間形成部８２３には、径方向溝８２４が形成されているが、径方向溝８２４がなくてもよい。この場合、図１２に示すように、洗浄液ノズル１１０Ｂが、ミストガード８０Ｂの隙間形成部８２３Ｂよりも半径方向内側の位置において排気カップ５１の張出部５１２に設けられる。洗浄液ノズル１１０Ｂから供給される洗浄液によって隙間Ｇ２を全周にわたって洗浄液で満たすことができる。また、隙間形成部８２３の下面と張出部５１２の上面との間の隙間Ｇ１も全周にわたって洗浄液で満たすことができる。洗浄液に溶け込んだ付着物は、洗浄液とともにガードポケット９０Ｂ内へ排出される。このようにして、ミストガード８０Ｂの表面（ウエハＷ側の面）を洗浄することができる。 In the above embodiment, the gap forming portion 823 is formed with the radial groove 824, but the radial groove 824 may not be provided. In this case, as shown in FIG. 12, the cleaning liquid nozzle 110B is provided in the projecting portion 512 of the exhaust cup 51 at a position radially inward of the gap forming portion 823B of the mist guard 80B. The gap G2 can be filled with the cleaning liquid over the entire circumference by the cleaning liquid supplied from the cleaning liquid nozzle 110B. Further, the gap G1 between the lower surface of the gap forming portion 823 and the upper surface of the overhanging portion 512 can be filled with the cleaning liquid over the entire circumference. Deposits dissolved in the cleaning liquid are discharged into the guard pocket 90B together with the cleaning liquid. In this manner, the surface of the mist guard 80B (the surface on the wafer W side) can be cleaned.
　図１１に示すＳＣ２ノズル４１８すなわち固定ノズルの周囲には、カバー６０が設けられている。カバー６０は床板９６に固定されている。カバー６０のミストガード８０Ａの方を向いた正面６１には、開口６２が形成されている。この開口６２を介して、カバー６０に覆われたＳＣ２ノズル４１８からウエハＷに向けてＳＣ２液（処理液）を吐出することができる。 A cover 60 is provided around the SC2 nozzle 418 shown in FIG. The cover 60 is fixed to the floor board 96. An opening 62 is formed in the front surface 61 of the cover 60 facing the mist guard 80A. The SC2 liquid (processing liquid) can be discharged toward the wafer W from the SC2 nozzle 418 covered by the cover 60 through the opening 62.
　ミストガード８０Ａの外周筒部の最上部すなわち張出部８２の上面の最外周部には、遮蔽部材８８が設けられている。遮蔽部材８８は、ミストガード８０Ａと一体不可分の部材であってもよいし、ミストガード８０Ａとは別に製造された後にミストガード８０Ａに固定された部材であってもよい。ミストガード８０Ａが低位置ＬＧに位置しているときに、遮蔽部材８８は、カバー６０の正面６１のうちの開口６２が形成されていない部分と狭い（例えば１～２ｍｍ程度の）隙間６３を空けて対向する。 A shielding member 88 is provided on the outermost cylindrical portion of the mist guard 80A, that is, on the outermost peripheral portion of the upper surface of the overhang portion 82. The shielding member 88 may be a member that cannot be integrated with the mist guard 80A, or may be a member that is manufactured separately from the mist guard 80A and then fixed to the mist guard 80A. When the mist guard 80A is located at the low position LG, the shielding member 88 opens a narrow gap (for example, about 1 to 2 mm) from the portion of the front surface 61 of the cover 60 where the opening 62 is not formed. Facing each other.
　狭い隙間６３にはガスが流れにくい。このため、ＳＣ２ノズル４１８からのＳＣ２液の吐出が停止しているときにＳＣ２ノズル４１８の吐出口付近に滞留しているＳＣ２液（処理液）の蒸気がチャンバ２０内に拡散すること、並びに、ＳＣ２ノズル４１８からダミーディスペンスを行うときに（固定ノズルであるのでダミーディスペンス時の吐出流量は非常に少ない）ＳＣ２液（処理液）の蒸気がチャンバ２０内に拡散することを防止することができる。 ¡Gas does not flow easily through the narrow gap 63. For this reason, when the discharge of the SC2 liquid from the SC2 nozzle 418 is stopped, the vapor of the SC2 liquid (processing liquid) staying in the vicinity of the discharge port of the SC2 nozzle 418 diffuses into the chamber 20, and When performing dummy dispensing from the SC2 nozzle 418 (since it is a fixed nozzle, the discharge flow rate during dummy dispensing is very small), it is possible to prevent the SC2 liquid (processing liquid) vapor from diffusing into the chamber 20.
　カバー６０と遮蔽部材８８を一体化してもよい。この場合、カバー６０及び遮蔽部材８８はミストガード８０Ａと連動して昇降する。またこの場合、ミストガード８０Ａの昇降時にカバー６０と遮蔽部材８８の干渉を防止するために設けられていた隙間６３は必要ない。このため、ＳＣ２液（処理液）の蒸気がチャンバ２０内に拡散することを防止することをより確実に防止することができる。 The cover 60 and the shielding member 88 may be integrated. In this case, the cover 60 and the shielding member 88 move up and down in conjunction with the mist guard 80A. In this case, the gap 63 provided to prevent interference between the cover 60 and the shielding member 88 when the mist guard 80A is raised and lowered is not necessary. For this reason, it can prevent more reliably that the vapor | steam of SC2 liquid (processing liquid) prevents spreading | diffusion in the chamber 20. FIG.
　ＳＣ２ノズル４１８の吐出口の下方には、樋６４（液案内部材）が設けられている。ＳＣ２ノズル４１８の吐出口から垂れ落ちたＳＣ２液は、樋６４を介してガードポケット９０内に流れ込む。このため、ＳＣ２ノズル４１８から垂れ落ちたＳＣ２液により床板９６が汚染されたり、床板９６に垂れ落ちたＳＣ２が蒸発してチャンバ２０内に拡散することを防止することができる。 樋 64 (liquid guide member) is provided below the discharge port of the SC2 nozzle 418. The SC2 liquid dripping from the discharge port of the SC2 nozzle 418 flows into the guard pocket 90 through the ridge 64. For this reason, it is possible to prevent the floor plate 96 from being contaminated by the SC2 liquid dripping from the SC2 nozzle 418 or the SC2 dripping from the floor plate 96 from being evaporated and diffused into the chamber 20.
　上記各実施形態では、処理対象の基板は半導体ウエハであったが、これに限定されるものではなく、他の基板、例えば液晶ディスプレイ用のガラス基板、セラミック基板等であってもよい。 In each of the above embodiments, the substrate to be processed is a semiconductor wafer, but is not limited to this, and may be another substrate, for example, a glass substrate for a liquid crystal display, a ceramic substrate, or the like.

Claims (20)

  1. 　基板を保持する基板保持部と、
    　前記基板保持部に保持された基板に処理液を吐出する少なくとも１つの処理液ノズルと、
    　前記基板保持部と前記処理液ノズルを収容する処理容器と、
    　前記基板保持部の周囲に配置され基板に供給された少なくとも処理液または処理液のミストを受ける、前記処理容器に対して相対的に不動な固定カップ体と、
    　前記固定カップ体を囲むように前記固定カップ体の外側に設けられ、前記固定カップ体の上方を越えて外方に飛散する液を遮断するミストガードと、
    　前記ミストガードを第１ガード高さと前記第１ガード高さより低い第２ガード高さに昇降させるガード昇降機構と、を備え、
    　前記ミストガードが、筒状の筒部と、前記筒部の上部から前記筒部の内側に向かって前記固定カップ体の上方に張り出す張出部とを有する、基板処理装置。     A substrate holder for holding the substrate;
    At least one processing liquid nozzle that discharges the processing liquid onto the substrate held by the substrate holder;
    A processing container containing the substrate holding part and the processing liquid nozzle;
    A stationary cup body that is arranged around the substrate holding unit and receives at least the processing liquid supplied to the substrate or a mist of the processing liquid, and is relatively stationary with respect to the processing container;
    A mist guard that is provided outside the fixed cup body so as to surround the fixed cup body, and that blocks liquid that splashes outward beyond the upper side of the fixed cup body;
    A guard lifting mechanism that lifts and lowers the mist guard to a first guard height and a second guard height lower than the first guard height,
    The substrate processing apparatus, wherein the mist guard includes a cylindrical tube portion, and an overhang portion that protrudes upward from the upper portion of the tube portion toward the inside of the tube portion.
  2. 　前記処理液ノズルから前記基板保持部により保持されている基板に処理液を供給するときに前記ミストガードを前記第１ガード高さに位置させ、前記基板を乾燥させるときに前記ミストガードを前記第２ガード高さに位置させるように前記ガード昇降機構を制御する制御部をさらに備えた、請求項１記載の基板処理装置。 The mist guard is positioned at the first guard height when the processing liquid is supplied from the processing liquid nozzle to the substrate held by the substrate holding portion, and the mist guard is moved to the first guard height when the substrate is dried. The substrate processing apparatus according to claim 1, further comprising a control unit that controls the guard lifting mechanism so as to be positioned at two guard heights.
  3. 　前記ミストガードが前記第１ガード高さにあるとき、前記ミストガードと前記固定カップ体の間に気流を形成し、前記ミストガードが前記第２ガード高さにあるとき、前記ミストガードの上方に気流を形成することを特徴とする、請求項２記載の基板処理装置。 When the mist guard is at the first guard height, an air flow is formed between the mist guard and the fixed cup body, and when the mist guard is at the second guard height, the mist guard is above the mist guard. The substrate processing apparatus according to claim 2, wherein an air flow is formed.
  4. 　前記ミストガードの外側に、前記処理容器内の処理空間の底部を画定する床板と、前記処理空間内の雰囲気を前記処理空間の外側に排気する排気口と、を備えた、請求項１または３に記載の基板処理装置。 The floor plate which demarcates the bottom part of the processing space in the said processing container in the outer side of the said mist guard, and the exhaust port which exhausts the atmosphere in the said processing space to the outer side of the said processing space were provided. 2. The substrate processing apparatus according to 1.
  5. 　前記床板は、前記処理容器の側壁まで延び、前記床板の上面は、前記側壁に近づくに従って高さが低くなるように傾斜している、請求項４記載の基板処理装置。 The substrate processing apparatus according to claim 4, wherein the floor board extends to a side wall of the processing container, and an upper surface of the floor board is inclined so as to decrease in height as approaching the side wall.
  6. 　前記処理液ノズルとして第１処理液ノズルと第２処理液ノズルが設けられ、
    　前記基板処理装置は、前記第１処理液ノズルを保持して前記第１処理液ノズルを移動させる第１ノズルアームと、前記第２処理液ノズルを保持して前記第２処理液ノズルを移動させる第２ノズルアームと、前記基板処理装置の動作を制御する制御部と、をさらに備え、
    　前記制御部は、前記第２ノズルアームを駆動して前記第２処理液ノズルを前記基板保持部により保持されている基板の外方の位置から前記基板の上方の位置に進出させるとともに前記第１ノズルアームを駆動して前記第１処理液ノズルを前記基板の上方の位置から前記基板の外方の位置に退避させるノズル入替操作を行うときに、前記ミストガードを前記第１ガード高さと前記第２ガード高さの中間の第３ガード高さに位置させる、請求項１記載の基板処理装置。     As the processing liquid nozzle, a first processing liquid nozzle and a second processing liquid nozzle are provided,
    The substrate processing apparatus holds the first processing liquid nozzle and moves the first processing liquid nozzle, and holds the second processing liquid nozzle and moves the second processing liquid nozzle. A second nozzle arm, and a controller that controls the operation of the substrate processing apparatus,
    The control unit drives the second nozzle arm to advance the second processing liquid nozzle from a position outside the substrate held by the substrate holding unit to a position above the substrate and the first. When performing a nozzle replacement operation for driving the nozzle arm to retract the first processing liquid nozzle from a position above the substrate to a position outside the substrate, the mist guard is moved to the first guard height and the first guard height. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is positioned at a third guard height intermediate between the two guard heights.
  7. 　前記第１ノズルアームを、第１アーム高さと、前記第１アーム高さよりも低い第２アーム高さの間で昇降させる第１アーム昇降機構と、
    　前記第２ノズルアームを、第３アーム高さと、前記第３アーム高さよりも低い第４アーム高さの間で昇降させる第２アーム昇降機構と、
    　を備え、
    　前記制御部は、前記ノズル入替操作を行うときに、前記第１アーム昇降機構を制御して前記第１アーム高さに前記第１ノズルアームを位置させ、前記第２アーム昇降機構を制御して前記第３アーム高さに前記第２ノズルアームを位置させる、請求項６記載の基板処理装置。     A first arm lifting mechanism for lifting and lowering the first nozzle arm between a first arm height and a second arm height lower than the first arm height;
    A second arm lifting mechanism that lifts and lowers the second nozzle arm between a third arm height and a fourth arm height lower than the third arm height;
    With
    When performing the nozzle replacement operation, the control unit controls the first arm lifting mechanism to position the first nozzle arm at the first arm height, and controls the second arm lifting mechanism. The substrate processing apparatus according to claim 6, wherein the second nozzle arm is positioned at the third arm height.
  8. 　前記基板保持部に保持された基板を回転させる回転機構をさらに備え、
    　前記制御部は、前記ノズル入替操作を行うときに、前記回転機構を制御して、前記ノズル入替操作を行う前に前記第１処理液ノズルが処理液を基板に吐出しているときよりも基板の回転数を低下させる、請求項６記載の基板処理装置。     A rotation mechanism for rotating the substrate held by the substrate holding unit;
    The control unit controls the rotating mechanism when performing the nozzle replacement operation, and the substrate is more than when the first processing liquid nozzle discharges the processing liquid onto the substrate before performing the nozzle replacement operation. The substrate processing apparatus according to claim 6, wherein the number of rotations is reduced.
  9. 　前記ミストガードの外側から前記基板保持部に保持された基板に処理液を供給する固定ノズルをさらに備え、前記ミストガードが前記第１ガード高さにあるときに前記固定ノズルから吐出された処理液が前記ミストガードを通過して基板に到達することを許容する通液開口が前記ミストガードに形成されている、請求項１記載の基板処理装置。 A fixing nozzle for supplying a processing liquid to the substrate held by the substrate holder from the outside of the mist guard; and the processing liquid discharged from the fixed nozzle when the mist guard is at the first guard height. The substrate processing apparatus according to claim 1, wherein a liquid passage opening that allows the liquid to pass through the mist guard and reach the substrate is formed in the mist guard.
  10. 　前記ミストガードの前記筒部を収容するミストガード収容部と、
    　前記ミストガード収容部の内部に流れ込む液またはガスを排出する排出部と、
    　をさらに備えた、請求項１記載の基板処理装置。     A mist guard accommodating portion for accommodating the cylindrical portion of the mist guard;
    A discharge section for discharging liquid or gas flowing into the mist guard housing section;
    The substrate processing apparatus according to claim 1, further comprising:
  11. 　前記ミストガードの前記固定カップ体を向いた面を洗浄する洗浄機構をさらに備えた、請求項１記載の基板処理装置。 The substrate processing apparatus according to claim 1, further comprising a cleaning mechanism for cleaning a surface of the mist guard facing the fixed cup body.
  12. 　前記固定カップ体は、前記基板保持部により保持された基板の中心部側に向かって延びる傾斜上面を有し、この傾斜上面は、前記基板の中心部に近づくに従って高さが高くなるように傾斜し、前記傾斜上面は、前記第２ガード高さにある前記ミストガードの前記張出部の先端部分と接触し、これにより前記ミストガードの前記固定カップ体の側を向いた面に面する空間が、前記基板保持部により保持された基板の上方の空間から隔離される、請求項１記載の基板処理装置。 The fixed cup body has an inclined upper surface extending toward the center portion side of the substrate held by the substrate holding portion, and the inclined upper surface is inclined so that the height increases as it approaches the center portion of the substrate. The inclined upper surface is in contact with the tip portion of the protruding portion of the mist guard at the second guard height, and thereby faces the surface of the mist guard facing the fixed cup body. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is isolated from a space above the substrate held by the substrate holding unit.
  13. 　前記洗浄機構は、前記ミストガードが前記第２ガード高さにあるとき、洗浄液を供給することにより前記ミストガードの洗浄を行う、請求項１１記載の基板処理装置。 12. The substrate processing apparatus according to claim 11, wherein the cleaning mechanism cleans the mist guard by supplying a cleaning liquid when the mist guard is at the second guard height.
  14. 　前記固定カップ体は、筒状の筒部と、前記筒部の上部から前記筒部の内側に向かって張り出す張出部とを有し、
    　前記ミストガードの前記張出部の下面に隙間形成部を形成し、前記隙間形成部は、前記隙間形成部の下面と前記固定カップ体の前記張出部の上面との間に第１隙間を形成し、前記ミストガードの前記隙間形成部がない部分と前記固定カップ体の前記張出部の上面との間に第２隙間が形成され、
    　前記洗浄機構は、前記第２隙間に洗浄液を供給する洗浄液ノズルを有する
    請求項１３記載の基板処理装置。     The fixed cup body includes a cylindrical tube portion, and an overhang portion that protrudes from the upper portion of the tube portion toward the inside of the tube portion,
    A gap forming portion is formed on a lower surface of the overhang portion of the mist guard, and the gap forming portion has a first gap between a lower surface of the gap forming portion and an upper surface of the overhang portion of the fixed cup body. Forming a second gap between a portion of the mist guard without the gap forming portion and an upper surface of the protruding portion of the fixed cup body,
    The substrate processing apparatus according to claim 13, wherein the cleaning mechanism includes a cleaning liquid nozzle that supplies a cleaning liquid to the second gap.
  15. 　前記隙間形成部は、前記ミストガードの前記張出部の全周にわたって延びており、
    　前記隙間形成部の下面には、半径方向に延びる径方向溝と、径方向溝と交差し円周方向に延びる円周溝とが形成され、
    　前記洗浄液ノズルは、前記径方向溝と対向する位置において前記固定カップ体に設けられ、前記円周溝は、前記洗浄液ノズルの半径方向内側に設けられている
    請求項１４記載の基板処理装置。     The gap forming portion extends over the entire circumference of the protruding portion of the mist guard,
    A radial groove extending in the radial direction and a circumferential groove extending in the circumferential direction intersecting with the radial groove are formed on the lower surface of the gap forming portion,
    The substrate processing apparatus according to claim 14, wherein the cleaning liquid nozzle is provided in the fixed cup body at a position facing the radial groove, and the circumferential groove is provided radially inward of the cleaning liquid nozzle.
  16. 　前記固定カップ体は、前記固定カップ体の径方向外側に、前記固定カップ体に対して不動のカップ形構成要素を有し、前記固定カップ体と前記カップ形構成要素との間の空間が排気される、請求項１記載の基板処理装置。 The fixed cup body has a cup-shaped component that is immovable with respect to the fixed cup body on a radially outer side of the fixed cup body, and a space between the fixed cup body and the cup-shaped component is exhausted. The substrate processing apparatus according to claim 1.
  17. 　前記ミストガードが前記第１ガード高さに位置しているとき、前記ミストガードの前記筒部の下端は前記床板の上面より高い位置に位置する、請求項４記載の基板処理装置。 The substrate processing apparatus according to claim 4, wherein when the mist guard is positioned at the first guard height, a lower end of the cylindrical portion of the mist guard is positioned higher than an upper surface of the floor board.
  18. 　基板を保持する基板保持部と、
    　前記基板保持部に保持された基板の上面に処理液を吐出する少なくとも１つの処理液ノズルと、
    　前記基板保持部と前記処理液ノズルを収容する処理容器と、
    　前記基板保持部の周囲に配置され基板に供給された処理液または処理液のミストを受ける、前記処理容器に対して相対的に不動な固定カップ体と、
    　前記固定カップ体を囲むように前記固定カップ体の外側に設けられ、前記固定カップ体の上方を越えて外方に飛散する液を遮断するミストガードと、
    　前記ミストガードを昇降させるガード昇降機構と、を備え、
    　前記ミストガードが、筒状の筒部と、前記筒部の上端から前記固定カップ体の側に向かって張り出す張出部とを有する、基板処理装置を用い、
    　前記ミストガードを第１ガード高さに位置させた状態で、前記処理液ノズルから前記基板保持部により保持されている基板に処理液を供給する工程と、
    　前記ミストガードを前記第１ガード高さより低い第２ガード高さに位置させた状態で、前記基板を乾燥させる工程と、
    を備えた基板処理方法。     A substrate holder for holding the substrate;
    At least one processing liquid nozzle that discharges the processing liquid onto the upper surface of the substrate held by the substrate holder;
    A processing container containing the substrate holding part and the processing liquid nozzle;
    A stationary cup body which is disposed around the substrate holding unit and receives a processing liquid supplied to the substrate or a mist of the processing liquid, which is relatively stationary with respect to the processing container;
    A mist guard that is provided outside the fixed cup body so as to surround the fixed cup body, and that blocks liquid that splashes outward beyond the upper side of the fixed cup body;
    A guard lifting mechanism for lifting and lowering the mist guard,
    Using the substrate processing apparatus, wherein the mist guard includes a cylindrical tube portion and an overhang portion that protrudes from the upper end of the tube portion toward the fixed cup body side,
    Supplying the processing liquid from the processing liquid nozzle to the substrate held by the substrate holding portion in a state where the mist guard is positioned at the first guard height;
    Drying the substrate with the mist guard positioned at a second guard height lower than the first guard height;
    A substrate processing method comprising:
  19. 　前記処理液ノズルとして第１処理液ノズルと第２処理液ノズルが設けられ、前記基板処理装置は、前記第１処理液ノズルを保持して前記第１処理液ノズルを移動させる第１ノズルアームと、前記第２処理液ノズルを保持して前記第２処理液ノズルを移動させる第２ノズルアームとをさらに備え、
    　前記基板処理方法は、前記基板に処理液を供給する工程として、前記第２処理液ノズルを前記基板の上方から退避させた状態で前記基板の上方に位置する前記第１処理液ノズルから前記基板に処理液を供給する工程と、前記第１処理液ノズルを前記基板の上方から退避させた状態で前記基板の上方に位置する前記第２処理液ノズルから前記基板に処理液を供給する工程と、を含み、
    　前記第２処理液ノズルを前記基板保持部により保持されている基板の外方の位置から前記基板の上方の位置に進出させるとともに前記第１処理液ノズルを前記基板の上方の位置から前記基板の外方の位置に退避させるノズル入替操作を行うときに、前記ミストガードを前記第１ガード高さと前記第２ガード高さの中間の第３ガード高さに位置させる、請求項１８記載の基板処理方法。     A first processing liquid nozzle and a second processing liquid nozzle are provided as the processing liquid nozzle, and the substrate processing apparatus includes a first nozzle arm that holds the first processing liquid nozzle and moves the first processing liquid nozzle. A second nozzle arm that holds the second processing liquid nozzle and moves the second processing liquid nozzle;
    In the substrate processing method, as the step of supplying a processing liquid to the substrate, the second processing liquid nozzle is retracted from above the substrate and the substrate is moved from the first processing liquid nozzle positioned above the substrate. Supplying the processing liquid to the substrate, and supplying the processing liquid to the substrate from the second processing liquid nozzle located above the substrate in a state where the first processing liquid nozzle is retracted from above the substrate. Including,
    The second processing liquid nozzle is advanced from an outer position of the substrate held by the substrate holding portion to a position above the substrate, and the first processing liquid nozzle is moved from a position above the substrate to the position of the substrate. 19. The substrate processing according to claim 18, wherein the mist guard is positioned at a third guard height intermediate between the first guard height and the second guard height when performing a nozzle replacement operation for retracting to an outer position. Method.
  20. 　コンピュータプログラムが格納された記憶媒体であって、前記コンピュータプログラムが基板処理装置の制御装置をなすコンピュータにより実行されたときに、当該コンピュータが前記基板処理装置の動作を制御して、請求項１８記載の基板処理方法を実行させる、記憶媒体。 19. A storage medium storing a computer program, wherein the computer controls the operation of the substrate processing apparatus when the computer program is executed by a computer constituting a control apparatus of the substrate processing apparatus. A storage medium for executing the substrate processing method according to claim 1.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018129470A (en) * 2017-02-10 2018-08-16 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and substrate processing method
CN111446150A (en) * 2019-01-17 2020-07-24 东京毅力科创株式会社 Substrate processing method and substrate processing apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7161415B2 (en) * 2019-01-21 2022-10-26 株式会社ディスコ processing equipment
CN112768378B (en) * 2020-12-31 2023-02-10 上海至纯洁净系统科技股份有限公司 Staggered wafer surface wet cleaning system and cleaning method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159871A (en) * 2006-12-25 2008-07-10 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
JP2009059895A (en) * 2007-08-31 2009-03-19 Tokyo Electron Ltd Liquid treatment apparatus, liquid treating method, and storage medium
JP2010232528A (en) * 2009-03-27 2010-10-14 Pre-Tech Co Ltd Single wafer cleaning apparatus
JP2014123704A (en) * 2012-11-26 2014-07-03 Tokyo Electron Ltd Substrate cleaning system, substrate cleaning method and storage medium
JP2015041672A (en) * 2013-08-21 2015-03-02 東京エレクトロン株式会社 Substrate cleaning device, substrate cleaning method, and computer-readable storage medium

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4488506B2 (en) * 2004-08-30 2010-06-23 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP5151629B2 (en) * 2008-04-03 2013-02-27 東京エレクトロン株式会社 Substrate cleaning method, substrate cleaning apparatus, developing method, developing apparatus, and storage medium
JP4983885B2 (en) * 2009-10-16 2012-07-25 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium
JP5645796B2 (en) * 2011-11-21 2014-12-24 東京エレクトロン株式会社 Liquid processing apparatus and liquid processing method
JP5967519B2 (en) * 2012-03-08 2016-08-10 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and substrate processing method
JP6057334B2 (en) * 2013-03-15 2017-01-11 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment
JP6250973B2 (en) * 2013-08-08 2017-12-20 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and substrate processing method
JP6069140B2 (en) * 2013-09-10 2017-02-01 東京エレクトロン株式会社 Substrate processing system, substrate processing method, and computer readable storage medium storing substrate processing program

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159871A (en) * 2006-12-25 2008-07-10 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
JP2009059895A (en) * 2007-08-31 2009-03-19 Tokyo Electron Ltd Liquid treatment apparatus, liquid treating method, and storage medium
JP2010232528A (en) * 2009-03-27 2010-10-14 Pre-Tech Co Ltd Single wafer cleaning apparatus
JP2014123704A (en) * 2012-11-26 2014-07-03 Tokyo Electron Ltd Substrate cleaning system, substrate cleaning method and storage medium
JP2015041672A (en) * 2013-08-21 2015-03-02 東京エレクトロン株式会社 Substrate cleaning device, substrate cleaning method, and computer-readable storage medium

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018129470A (en) * 2017-02-10 2018-08-16 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and substrate processing method
WO2018146906A1 (en) * 2017-02-10 2018-08-16 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing device and substrate processing method
KR20190099309A (en) * 2017-02-10 2019-08-26 가부시키가이샤 스크린 홀딩스 Substrate processing apparatus and substrate processing method
US11114302B2 (en) 2017-02-10 2021-09-07 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
KR102319209B1 (en) * 2017-02-10 2021-10-28 가부시키가이샤 스크린 홀딩스 Substrate processing apparatus and substrate processing method
CN111446150A (en) * 2019-01-17 2020-07-24 东京毅力科创株式会社 Substrate processing method and substrate processing apparatus
CN111446150B (en) * 2019-01-17 2024-03-01 东京毅力科创株式会社 Substrate processing method and substrate processing apparatus

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