JP2014110404A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To protect a substrate from foreign objects such as particles and inhibit or prevent destruction of a pattern.SOLUTION: A substrate processing apparatus includes: a spin chuck 5 which holds a substrate W in a horizontal posture; and a center gas nozzle 8 and a peripheral gas nozzle 10 which are disposed above the substrate W held by the spin chuck 5. The center gas nozzle 8 is smaller than the substrate W in a plane view. The center gas nozzle 8 discharges a gas above the substrate W and thereby generates air flow which radially spreads from a center part of an upper surface of the substrate W to a peripheral part of the upper surface of the substrate W along the upper surface of the substrate W. The peripheral gas nozzle 10 discharges the gas from an area above the air flow formed by the center gas nozzle 8 toward the peripheral part of the upper surface of the substrate W.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

  A single-wafer type substrate processing apparatus disclosed in Patent Document 1 includes a spin chuck that holds and rotates a substrate horizontally, a processing solution nozzle that supplies a processing solution such as a chemical solution or a rinsing solution to the substrate, and an upper portion above a central portion of the substrate. And a gas discharge nozzle for discharging gas radially. When a substrate is processed by this substrate processing apparatus, a chemical solution process for supplying a chemical solution to the upper surface of the rotated substrate and a rinsing process for supplying a rinse solution to the upper surface of the rotated substrate are sequentially performed. Thereafter, a drying process is performed in which the substrate is rotated at high speed while the upper surface of the substrate is covered with the gas discharged from the gas discharge nozzle.

JP 2010-238758 A

  In the drying process of Patent Document 1, the liquid adhering to the upper surface of the substrate evaporates in a state where the upper surface of the substrate is covered with an airflow that radiates from the center of the upper surface of the substrate. The vapor generated on the substrate is pushed away toward the peripheral edge of the upper surface of the substrate by the gas discharged from the gas discharge nozzle. Therefore, the area around the central portion of the upper surface of the substrate is in an environment where the humidity is likely to be higher than that of the central portion of the upper surface of the substrate, and is more difficult to dry than the central portion of the upper surface of the substrate. In particular, since almost all the vapor collects at the peripheral edge of the upper surface of the substrate, the peripheral edge of the upper surface of the substrate is in an environment that is difficult to dry.

  When the humidity on the substrate is high, the evaporation of the liquid is hindered, so that the drying time of the substrate increases. If the drying time is long, the time that the force resulting from the surface tension of the liquid is applied to the pattern formed on the substrate also increases. Also, if the humidity on the substrate is uneven, the drying speed of the liquid on the substrate will vary, so the force applied to one side of the pattern will exceed the force applied to the other side, causing the force to collapse the pattern. To do. Therefore, the pattern may collapse in the process of drying the substrate.

  Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can protect a substrate from foreign matters such as particles and can suppress or prevent pattern collapse.

  In order to achieve the above object, the invention according to claim 1 includes a substrate holding means (5) for holding a disk-like substrate (W) in a horizontal posture, and an upper portion of the substrate held by the substrate holding means. An air flow that is smaller than the substrate in a plan view and spreads radially from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate along the upper surface of the substrate by discharging gas above the substrate And a central gas nozzle (8) for forming a gas, and is arranged above the substrate held by the substrate holding means, and allows gas to flow from above the airflow formed by the central gas nozzle toward the upper peripheral edge of the substrate. A substrate processing apparatus (1) including a peripheral gas nozzle (10) for discharging.

  According to this configuration, the small central gas nozzle that partially covers the substrate in plan view discharges gas above the substrate. As a result, an airflow that radiates from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate is formed above the substrate along the upper surface of the substrate. Covered by. As a result, the upper surface of the substrate is protected from particles and mist.

  Similar to the central gas nozzle, the peripheral gas nozzle disposed above the substrate covers the substrate together with the central gas nozzle and protects the upper surface of the substrate. Further, the peripheral gas nozzle discharges gas from above the airflow formed by the central gas nozzle toward the peripheral edge of the upper surface of the substrate. The gas floating in the space above the peripheral edge of the substrate flows toward the substrate together with the gas discharged from the peripheral gas nozzle, and collides with the gas discharged from the central gas nozzle. These gases are forced outward by the gas discharged from the central gas nozzle. Thereby, the gas drifting in the space above the peripheral part of the substrate is replaced with the gas discharged from the peripheral gas nozzle.

  As described above, since the gas drifting in the space above the peripheral edge of the substrate is quickly discharged from this space, the vapor generated by the evaporation of the liquid on the substrate is moved outward by the gas discharged from the central gas nozzle. Even if it is swept away, an increase in humidity at the periphery of the upper surface of the substrate can be suppressed. Therefore, the entire upper surface of the substrate can be maintained at a low humidity. Therefore, the drying time of the substrate can be shortened by improving the drying speed. Furthermore, since variation in the drying rate within the upper surface of the substrate can be reduced, collapse of the pattern can be suppressed or prevented.

According to a second aspect of the present invention, the central gas nozzle surrounds a vertical line (A1) passing through the center of the upper surface of the substrate held by the substrate holding means and has a cylindrical shape having a diameter smaller than that of the substrate. 2. The substrate processing apparatus according to claim 1, comprising an outer peripheral surface (8 a) and an annular outward gas discharge port (23) that opens at the outer peripheral surface and is continuous over the entire periphery of the outer peripheral surface.
According to this configuration, the outer peripheral surface of the central gas nozzle having a diameter smaller than that of the substrate surrounds the vertical line passing through the central portion of the upper surface of the substrate, and the annular outward gas discharge port that is continuous over the entire periphery is the central gas Opened on the outer peripheral surface of the nozzle. The outward gas discharge port discharges gas toward the periphery of the central gas nozzle. As a result, an annular airflow is formed that radiates from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate along the upper surface of the substrate. Furthermore, since the outward gas discharge port discharges gas outward, the gas discharged from the outward gas discharge port spreads outward with almost no change of direction. Therefore, the flow velocity at the peripheral edge of the upper surface of the substrate can be increased as compared with the case where the gas discharged from the central gas nozzle collides with the substrate and spreads outward along the upper surface of the substrate. Thereby, the upper-surface peripheral part of a board | substrate can be protected reliably.

  In addition to the outward gas discharge port, the central gas nozzle includes a downward gas discharge port (24) that opens at the lower surface (8b) of the central gas nozzle as an opposing surface that faces the upper surface of the substrate. Also good. Naturally, instead of the outward gas discharge port, the downward gas discharge port may be provided in the central gas nozzle, and the outward gas discharge port may be omitted. In any case, the gas discharged downward from the downward gas discharge port collides with the upper surface of the substrate and spreads outward between the upper surface of the substrate and the lower surface of the central gas nozzle. As a result, an airflow is formed that radiates from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate along the upper surface of the substrate. This reliably protects the upper surface of the substrate.

The invention according to claim 3 supports the central gas nozzle and the peripheral gas nozzle, and is disposed above the peripheral gas nozzle so as to overlap at least a part of the peripheral gas nozzle in a plan view. The substrate processing apparatus according to claim 1, further comprising an arm.
According to this configuration, the central gas nozzle and the peripheral gas nozzle are held by the common nozzle arm. Therefore, the number of parts of the substrate processing apparatus can be reduced as compared with the case where the central gas nozzle and the peripheral gas nozzle are held by separate nozzle arms. Furthermore, since the nozzle arm is disposed at a position higher than the peripheral gas nozzle and overlaps at least a part of the peripheral gas nozzle in plan view, the nozzle arm and the peripheral gas nozzle do not overlap in plan view As a result, the area occupied by the nozzle arm and the peripheral gas nozzle can be reduced. Thereby, a substrate processing apparatus can be reduced in size.

According to a fourth aspect of the present invention, the peripheral gas nozzle has a rod shape extending in the radial direction of the substrate in a plan view, and the nozzle arm extends from the inner end (10a) of the peripheral gas nozzle to the peripheral gas nozzle. The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus overlaps with a region up to the outer end (10 b) of the substrate in plan view.
According to this configuration, the peripheral gas nozzle is miniaturized in a bar shape extending in the radial direction of the substrate in a plan view, and the nozzle arm extends from the inner end of the peripheral gas nozzle to the outer end of the peripheral gas nozzle. It overlaps the area in plan view. Thereby, the space under the nozzle arm is used more efficiently. Therefore, the area occupied by the nozzle arm and the peripheral gas nozzle can be further reduced, and the substrate processing apparatus can be further downsized.

  According to a fifth aspect of the present invention, the peripheral gas nozzle is a plurality of holes (38a) arranged in the radial direction of the substrate or a slit extending in the radial direction of the substrate, and the substrate extends from the peripheral edge of the upper surface of the substrate. 5. The substrate processing apparatus according to claim 1, further comprising a peripheral gas discharge port facing in a vertical direction in a region in the upper surface of the substrate extending inward in the radial direction.

  According to this configuration, the peripheral gas discharge port is configured by a plurality of holes arranged in the radial direction of the substrate or a slit extending in the radial direction of the substrate. It is opposed to a region in the upper surface of the substrate extending in the vertical direction. Therefore, the peripheral gas discharge port discharges gas not only to the peripheral edge portion of the upper surface of the substrate but also to the inner region thereof. Therefore, not only the humidity at the peripheral edge of the upper surface of the substrate but also an increase in humidity in the inner region can be suppressed. Thereby, the drying time of a board | substrate can be shortened and the dispersion | variation in the drying speed within the upper surface of a board | substrate can be reduced.

  According to a sixth aspect of the present invention, the peripheral gas nozzle discharges gas from the outer end portion of the peripheral gas discharge port at a flow rate faster than the flow rate of gas discharged from the inner end portion of the peripheral gas discharge port. The substrate processing apparatus according to claim 5. The flow velocity of the gas from the peripheral gas discharge port may be adjusted by the opening area of each part of the peripheral gas discharge port. Further, when the peripheral gas discharge port is a plurality of holes, a plurality of flow paths respectively connected to the plurality of holes are provided in the peripheral gas nozzle, and the gas supply flow rate from each flow path to the corresponding holes is set. The flow rate of the gas from each hole may be adjusted by the change.

  According to this configuration, the peripheral gas nozzle has a flow rate faster than the flow rate of the gas discharged from the inner end portion of the peripheral gas discharge port, and gas flows from the outer end portion of the peripheral gas discharge port toward the upper peripheral portion of the substrate. Is discharged. The flow rate of the gas discharged from the central gas nozzle decreases as the distance from the central gas nozzle increases. That is, the flow rate of the gas discharged from the central gas nozzle is reduced at the peripheral edge of the upper surface of the substrate. Therefore, by discharging the gas from the peripheral gas nozzle at a high speed toward the peripheral edge of the upper surface of the substrate, it is possible to reliably protect the peripheral edge of the upper surface of the substrate with an air flow.

  According to a seventh aspect of the present invention, the substrate processing apparatus further comprises a substrate rotating means (16) for rotating the substrate around a vertical line (A1) passing through a central portion of the upper surface of the substrate held by the substrate holding means. In addition, the peripheral gas nozzle discharges gas in a discharge direction (D2) from the peripheral gas nozzle toward the upper surface of the substrate, and the discharge direction is a rotation direction of the substrate from the peripheral gas nozzle ( It is a substrate processing apparatus as described in any one of Claims 1-6 which incline in the said rotation direction with respect to the perpendicular direction so that it may go to the downstream of Dr).

  According to this configuration, the peripheral gas nozzle discharges gas in a direction inclined in the rotation direction of the substrate with respect to the vertical direction so as to go downstream from the peripheral gas nozzle in the rotation direction of the substrate. Therefore, the gas discharged from the peripheral gas nozzle flows toward the upper surface of the substrate and flows downstream in the rotation direction of the substrate. That is, the peripheral gas nozzle forms an airflow that flows along the airflow generated on the substrate as the substrate rotates. Therefore, a stable airflow is formed on the substrate, and the upper surface of the substrate is reliably covered with the gas discharged from the peripheral gas nozzle. This reliably protects the upper surface of the substrate.

According to an eighth aspect of the present invention, the peripheral gas nozzle discharges gas in a discharge direction (D3) from the peripheral gas nozzle toward the upper surface of the substrate, and the discharge direction is the center of the upper surface of the substrate. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is inclined in a radial direction of the substrate with respect to a vertical direction so as to be separated from a portion.
According to this configuration, the peripheral gas nozzle discharges gas from the peripheral gas nozzle outward in the radial direction of the substrate. The gas discharged from the central gas nozzle flows outward along the upper surface of the substrate. Therefore, the peripheral gas nozzle forms an airflow that flows along the airflow formed by the central gas nozzle. Therefore, a stable airflow is formed on the substrate, and the upper surface of the substrate is reliably covered with the gas discharged from the central gas nozzle and the peripheral gas nozzle. This reliably protects the upper surface of the substrate.

  The invention according to claim 9 is the processing liquid supply means (6, 7, 9) for supplying a processing liquid to the upper surface of the substrate held by the substrate holding means, and the substrate held by the substrate holding means. Substrate rotating means for rotating the substrate around a vertical line passing through the center of the upper surface thereof, and a control means (3) for controlling the central gas nozzle, peripheral gas nozzle, processing liquid supply means, and substrate rotating means. A substrate processing apparatus according to any one of claims 1 to 8.

  The control means includes a treatment liquid supply step for supplying a treatment liquid from the treatment liquid supply means to the upper surface of the substrate, and a gas is discharged from the central gas nozzle so that the center of the upper surface of the substrate A substrate coating step of forming an airflow radially spreading on the upper surface peripheral edge portion on the substrate and discharging gas from the peripheral gas nozzle from above the airflow formed by the central gas nozzle toward the upper surface peripheral edge portion of the substrate. And, after the treatment liquid supply step, in parallel with the substrate coating step, the substrate is dried by removing the treatment liquid adhering to the substrate by the rotation of the substrate by the substrate rotation means from the substrate. And drying step.

  According to this configuration, after the processing liquid is supplied to the substrate, the substrate rotating unit rotates the substrate held by the substrate holding unit at a high speed. Thereby, the processing liquid is removed from the substrate, and the substrate is dried (drying step). The control means discharges gas from the central gas nozzle and the peripheral gas nozzle in parallel with the drying process. Therefore, the substrate is dried in a state where the atmosphere on the substrate is maintained at a low humidity over the entire upper surface of the substrate. Therefore, the drying time of the substrate can be shortened, and variations in the drying rate within the upper surface of the substrate can be reduced. Thereby, collapse of a pattern can be suppressed or prevented.

  According to a tenth aspect of the present invention, there is provided a processing liquid supply step of supplying the processing liquid from the processing liquid supply means to the upper surface of the substrate held in a horizontal posture by the substrate holding means, and being held by the substrate holding means. The substrate is disposed above the substrate, is smaller than the substrate in plan view, and discharges gas above the substrate, so that the center of the upper surface of the substrate extends from the center of the substrate to the peripheral edge of the upper surface of the substrate. A gas is discharged from a central gas nozzle that forms a radially expanding airflow, and a gas is discharged from above the airflow formed by the central gas nozzle toward the peripheral edge of the upper surface of the substrate. In the upper surface of the substrate held by the substrate holding means in parallel with the substrate coating step after the substrate coating step for discharging gas toward the peripheral edge and the processing liquid supply step And a drying step of drying the substrate by removing processing liquid adhering to the substrate by rotation of the substrate by a substrate rotating means for rotating the substrate about a vertical line passing through the section. It is a processing method. According to this method, an effect similar to the effect described in regard to the invention of claim 9 can be obtained.

  In this section, alphanumeric characters in parentheses represent reference numerals of corresponding components in the embodiments described later, but the scope of the claims is not limited by these reference numerals.

It is the schematic diagram which looked at the inside of the processing unit with which the substrate processing apparatus concerning one embodiment of the present invention was equipped from the horizontal direction. It is the figure which looked at the center gas nozzle and the peripheral gas nozzle horizontally. It is a top view of a spin chuck, a center gas nozzle, and a peripheral gas nozzle. It is the figure which looked at the center gas nozzle and the peripheral gas nozzle in the direction of arrow IV shown in FIG. It is a graph which shows the relationship between the distance (radius) from the center of a board | substrate, and the humidity of the upper surface vicinity of a board | substrate. It is process drawing for demonstrating an example of the process of the board | substrate performed with the substrate processing apparatus which concerns on one Embodiment of this invention. It is a figure which shows the modification which the discharge direction of the gas from a peripheral gas nozzle inclines in the rotation direction of a board | substrate. It is a figure which shows the modification which the discharge direction of the gas from a peripheral gas nozzle inclines in the radial direction of a board | substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic view of the inside of a processing unit 2 provided in a substrate processing apparatus 1 according to an embodiment of the present invention as seen from the horizontal direction. FIG. 2 is a view of the central gas nozzle 8 and the peripheral gas nozzle 10 viewed horizontally. FIG. 3 is a plan view of the spin chuck 5, the central gas nozzle 8, and the peripheral gas nozzle 10. FIG. 4 is a view of the central gas nozzle 8 and the peripheral gas nozzle 10 in the direction of the arrow IV shown in FIG.

As shown in FIG. 1, the substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a single wafer processing unit 2 that processes the substrate W, and a control device 3 that controls the operation of the apparatus provided in the substrate processing apparatus 1 and the opening and closing of valves.
As shown in FIG. 1, the processing unit 2 holds a substrate W around a vertical rotation axis A <b> 1 passing through the center of the substrate W while holding the substrate W in a horizontal posture in the chamber 4 and the chamber 4. A spin chuck 5 that rotates, a plurality of nozzles 6 to 10 that discharge a processing fluid including a gas and a liquid above the substrate W held by the spin chuck 5, and a cylindrical cup 11 that surrounds the spin chuck 5. Including.

  As shown in FIG. 1, the chamber 4 includes a box-shaped partition 12 that houses the spin chuck 5 and the like, and an FFU 13 (fan filter unit 13) as a blower unit that sends clean air from the upper part of the partition 12 into the partition 12. And an exhaust device 14 for exhausting the gas in the chamber 4 from the lower part of the partition wall 12. The FFU 13 is disposed above the partition wall 12 and attached to the ceiling of the partition wall 12. The FFU 13 sends clean air from the ceiling of the partition wall 12 into the chamber 4. The exhaust device 14 is connected to the bottom of the cup 11 and sucks the gas in the chamber 4 from the bottom of the cup 11. The FFU 13 and the exhaust device 14 form a downflow (downflow) in the chamber 4. The FFU 13 and the exhaust device 14 are always driven. Therefore, the processing of the substrate W is performed in a state where a down flow is formed in the chamber 4.

  As shown in FIG. 1, the spin chuck 5 includes a disk-shaped spin base 15 that holds the substrate W horizontally, and a spin motor 16 that rotates the substrate W and the spin base 15 about the rotation axis A <b> 1. The spin chuck 5 may be a clamping chuck that holds the substrate W horizontally by sandwiching the substrate W in the horizontal direction, or by adsorbing the back surface (lower surface) of the substrate W that is a non-device forming surface. It may be a vacuum chuck that holds the substrate W horizontally. FIG. 1 shows a case where the spin chuck 5 is a clamping chuck in which the substrate W is clamped by a plurality of chuck pins 5a. The cup 11 surrounds the spin base 15. The upper end portion of the cup 11 that opens upward is disposed above the spin base 15. Therefore, the treatment liquid such as the chemical liquid and the rinse liquid discharged around the substrate W is received by the cup 11.

  As shown in FIG. 1, the plurality of nozzles 6 to 10 include a chemical nozzle 6 that ejects a chemical toward the substrate W held by the spin chuck 5. The processing unit 2 includes a chemical liquid pipe 17 connected to the chemical liquid nozzle 6 and a chemical liquid valve 18 interposed in the chemical liquid pipe 17. When the chemical liquid valve 18 is opened, the chemical liquid from the chemical liquid supply source is discharged from the chemical liquid nozzle 6 toward the upper surface of the substrate W. The chemical solution supplied to the chemical solution nozzle 6 is sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide solution, organic acid (eg, citric acid, oxalic acid, etc.), organic alkali (eg, TMAH: tetramethylammonium). Hydroxide, etc.), a surfactant, and a liquid containing at least one of a corrosion inhibitor.

  As shown in FIG. 1, the plurality of nozzles 6 to 10 include a rinsing liquid nozzle 7 that discharges a rinsing liquid toward the substrate W held by the spin chuck 5. The processing unit 2 includes a rinsing liquid pipe 19 connected to the rinsing liquid nozzle 7 and a rinsing liquid valve 20 interposed in the rinsing liquid pipe 19. When the rinse liquid valve 20 is opened, the rinse liquid from the rinse liquid supply source is discharged from the rinse liquid nozzle 7 toward the upper surface of the substrate W. The rinse liquid supplied to the rinse liquid nozzle 7 is pure water (deionized water). The rinse liquid supplied to the rinse liquid nozzle 7 is not limited to pure water but may be carbonated water, electrolytic ion water, hydrogen water, ozone water, or hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm). May be.

  The chemical liquid nozzle 6 may be a fixed nozzle that discharges the chemical liquid toward the center of the upper surface of the substrate W in a state where the chemical liquid discharge port is fixed. It may be a scan nozzle that discharges the chemical while moving so as to move between the peripheral portions. The same applies to the rinsing liquid nozzle 7. FIG. 1 shows a case where the chemical liquid nozzle 6 and the rinsing liquid nozzle 7 are scan nozzles. In this case, the processing unit 2 moves the first nozzle moving mechanism 21 that moves the liquid solution landing position within the upper surface of the substrate W by moving the chemical liquid nozzle 6, and the rinse liquid nozzle 7 to move the rinse liquid nozzle 7. And a second nozzle moving mechanism 22 for moving the liquid landing position within the upper surface of the substrate W.

  The first nozzle moving mechanism 21 moves the chemical liquid landing position within the upper surface of the substrate W by moving the chemical liquid nozzle 6. Further, the first nozzle moving mechanism 21 has a chemical solution between a processing position where the chemical solution discharged from the chemical solution nozzle 6 is deposited on the upper surface of the substrate W and a retreat position where the chemical solution nozzle 6 is retreated around the spin chuck 5. The nozzle 6 is moved. Similarly, the second nozzle moving mechanism 22 moves the rinsing liquid nozzle 7 within the upper surface of the substrate W by moving the rinsing liquid nozzle 7. Further, the second nozzle moving mechanism 22 includes a processing position where the rinsing liquid discharged from the rinsing liquid nozzle 7 is deposited on the upper surface of the substrate W, and a retreat position where the rinsing liquid nozzle 7 is retreated around the spin chuck 5. The rinse liquid nozzle 7 is moved between them.

  As shown in FIG. 2, the plurality of nozzles 6 to 10 are directed toward the central gas nozzle 8 that discharges gas above the substrate W held by the spin chuck 5 and the substrate W held by the spin chuck 5. And a solvent nozzle 9 for discharging IPA (liquid). The central gas nozzle 8 is disposed above the substrate W. The central gas nozzle 8 has a columnar shape extending in the vertical direction whose outer diameter is smaller than the diameter of the substrate W. The solvent nozzle 9 extends in the vertical direction inside the central gas nozzle 8 and is held by the central gas nozzle 8. Therefore, the solvent nozzle 9 is disposed above the substrate W. The discharge port of the solvent nozzle 9 that discharges IPA is disposed inside the central gas nozzle 8.

  As shown in FIGS. 2 and 3, the central gas nozzle 8 is parallel to the cylindrical outer peripheral surface 8 a surrounding a vertical line (matching the rotation axis A <b> 1) passing through the center of the upper surface of the substrate W and the upper surface of the substrate W. And a lower surface 8b. As shown in FIG. 2, the center gas nozzle 8 includes an annular outward gas discharge port 23 that opens at the outer peripheral surface 8 a of the center gas nozzle 8, and a downward gas discharge port 24 that opens at the lower surface 8 b of the center gas nozzle 8. The first flow path 25 connected to the outward gas discharge port 23 and the second flow path 26 connected to the downward gas discharge port 24 are included.

  As shown in FIG. 2, the first flow path 25 and the second flow path 26 are provided inside the central gas nozzle 8. The first flow path 25 has a cylindrical shape extending in the vertical direction, and the second flow path 26 extends in the vertical direction inside the first flow path 25. The outward gas discharge port 23 is an annular slit continuous over the entire circumference of the central gas nozzle 8, and the downward gas discharge port 24 is disposed below the outward gas discharge port 23. The downward gas discharge port 24 faces the upper surface of the substrate W. The outward gas discharge port 23 is a single annular slit that surrounds the rotation axis A1. The outward gas discharge port 23 may include a plurality of annular slits arranged at different heights.

  As shown in FIG. 2, the processing unit 2 includes a first gas pipe 27 connected to the first flow path 25, a first gas valve 28 interposed in the first gas pipe 27, and a second flow path 26. A second gas pipe 29 connected to the second gas pipe 29, and a second gas valve 30 interposed in the second gas pipe 29. When the first gas valve 28 is opened, gas from a gas supply source (not shown) is supplied to the first flow path 25 via the first gas pipe 27. Similarly, when the second gas valve 30 is opened, the gas from the gas supply source is supplied to the second flow path 26 via the second gas pipe 29.

  As shown in FIG. 2, the gas supplied to the central gas nozzle 8 is nitrogen gas. The gas supplied to the central gas nozzle 8 is not limited to nitrogen gas, but is any one of inert gas other than nitrogen gas, clean air (air from which foreign matter has been removed), and dry air (dehumidified clean air). There may be other gas than these. Nitrogen gas is a dry gas having a humidity of, for example, 10% or less, and clean air is a dry gas having a humidity of, for example, 40% or less. Dry air is a dry gas having a lower humidity than clean air. These dry gases are gases having a humidity below the humidity outside the chamber 4.

  As shown in FIG. 2, since the outward gas discharge port 23 is annular and opens outward, the nitrogen gas supplied to the first flow path 25 is directed outward toward the periphery of the central gas nozzle 8. The gas is discharged radially from the gas outlet 23. In addition, since the downward gas discharge port 24 opens downward, the nitrogen gas supplied to the second flow path 26 is discharged from the downward gas discharge port 24 toward the lower side of the central gas nozzle 8. The discharge direction of the nitrogen gas from the outward gas discharge port 23 may be a horizontal direction or a direction inclined downward with respect to the horizontal direction. FIG. 2 is a direction in which the discharge direction of the nitrogen gas from the outward gas discharge port 23 is inclined downward with respect to the horizontal direction, and the nitrogen gas is inclined from the outward gas discharge port 23 toward the upper surface of the substrate W. An example of being discharged is shown.

  As shown in FIG. 1, the processing unit 2 includes a third nozzle moving mechanism 31 that moves the central gas nozzle 8 between above the spin chuck 5 and around the spin chuck 5. The solvent nozzle 9 moves together with the central gas nozzle 8. The third nozzle moving mechanism 31 moves the central gas nozzle 8 in the horizontal direction and the vertical direction. The third nozzle moving mechanism 31 includes a processing position where the central gas nozzle 8 overlaps the substrate W in a plan view (position shown in FIG. 3) and a retreat position where the central gas nozzle 8 is positioned around the substrate W in a plan view. In between, the central gas nozzle 8 is moved horizontally. The processing position is a position where the central gas nozzle 8 overlaps only in the central portion of the upper surface of the substrate W in plan view, and the lower surface 8b of the central gas nozzle 8 faces the upper central portion of the substrate W in the vertical direction.

  As shown in FIG. 1, the third nozzle moving mechanism 31 includes a nozzle arm 32 that supports the central gas nozzle 8, a horizontal moving mechanism 33 that moves the nozzle arm 32 in the horizontal direction, and a nozzle arm 32 that moves in the vertical direction. And a vertical movement mechanism 34. One end of the nozzle arm 32 is fixed to the central gas nozzle 8, and the other end of the nozzle arm 32 is disposed outward from the spin chuck 5 and the cup 11. The nozzle arm 32 is disposed above the spin chuck 5. Further, the nozzle arm 32 is disposed above the lower surface 8 b of the central gas nozzle 8. The nozzle arm 32 is held in a fixed posture by a horizontal movement mechanism 33 and a vertical movement mechanism 34.

  The horizontal movement mechanism 33 is a mechanism including a rotary actuator such as a motor. The vertical movement mechanism 34 is a mechanism including a linear actuator such as a cylinder. The horizontal movement mechanism 33 moves the central gas nozzle 8 along a locus X1 (see FIG. 3) passing through the center of the upper surface of the substrate W in plan view by moving the nozzle arm 32 horizontally. The horizontal movement mechanism 33 is not limited to a rotation mechanism that rotates the nozzle arm 32 around an axis extending in the vertical direction around the spin chuck 5 and the cup 11, but may be a slide mechanism that translates the nozzle arm 32 in the horizontal direction. Good.

  As shown in FIG. 3, the nitrogen gas discharged radially from the outward gas discharge port 23 forms an annular airflow that spreads outward in the radial direction around the center gas nozzle 8. When the outward gas discharge port 23 discharges nitrogen gas with the central gas nozzle 8 positioned at the processing position, the discharged nitrogen gas flows radially outward along the upper surface of the substrate W, and the substrate Passes over the upper peripheral edge of W. Thereby, the entire upper surface of the substrate W is covered with the air flow, and the upper surface of the substrate W is protected from foreign matters such as mist and particles of the processing liquid.

  As shown in FIG. 2, when the downward gas discharge port 24 discharges nitrogen gas in a state where the central gas nozzle 8 is located at the processing position, the nitrogen gas discharged from the downward gas discharge port 24 is transferred to the substrate. After colliding with the upper surface of W, it spreads radially between the upper surface of the substrate W and the lower surface 8b of the central gas nozzle 8. Then, the nitrogen gas that has passed between the lower surface 8 b of the central gas nozzle 8 and the upper surface of the substrate W flows radially outward along the upper surface of the substrate W and passes above the peripheral edge of the upper surface of the substrate W. Thereby, a disk-shaped airflow covering the entire upper surface of the substrate W is formed. Therefore, when both the outward gas discharge port 23 and the downward gas discharge port 24 discharge nitrogen gas in a state where the central gas nozzle 8 is located at the processing position, the upper surface of the substrate W is caused by a plurality of layers of airflow overlapping vertically. The whole area is protected.

  As shown in FIG. 2, the processing unit 2 includes a solvent pipe 35 connected to the solvent nozzle 9 and a solvent valve 36 interposed in the solvent pipe 35. When the solvent valve 36 is opened, IPA (liquid) from the IPA supply source is discharged downward from the discharge port 9 a of the solvent nozzle 9. The discharge port 9 a of the solvent nozzle 9 is disposed inside the central gas nozzle 8 and faces the downward gas discharge port 24. Accordingly, the IPA supplied to the solvent nozzle 9 is discharged downward from the downward gas discharge port 24. The IPA discharged from the solvent nozzle 9 with the central gas nozzle 8 positioned at the processing position is deposited on the center of the upper surface of the substrate W. IPA is uniformly mixed with a liquid containing water such as pure water. IPA is an example of an organic solvent having a lower surface tension than pure water and higher volatility than pure water.

  As shown in FIG. 2, the plurality of nozzles 6 to 10 include a peripheral gas nozzle 10 that discharges nitrogen gas toward the upper surface of the substrate W. The peripheral gas nozzle 10 is a rod-like nozzle extending along a plane orthogonal to the rotation axis A1. The peripheral gas nozzle 10 is disposed around the central gas nozzle 8. The peripheral gas nozzle 10 extends in the radial direction of the substrate W. The peripheral gas nozzle 10 may extend in a direction inclined in the horizontal direction with respect to the radial direction of the substrate W.

  As shown in FIG. 2, the inner end 10 a (radially inner end) of the peripheral gas nozzle 10 is disposed at a position away from the outer peripheral surface 8 a of the central gas nozzle 8 in the horizontal direction. Therefore, the peripheral gas nozzle 10 is not in contact with the central gas nozzle 8. The inner end 10 a of the peripheral gas nozzle 10 may be in contact with the central gas nozzle 8. The outer end 10 b (radially outward end) of the peripheral gas nozzle 10 is disposed above the peripheral edge of the substrate W. The shortest distance from the rotation axis A1 to the outer end 10b of the peripheral gas nozzle 10 is approximately equal to the radius of the substrate W. The shortest distance from the rotation axis A1 to the outer end 10b of the peripheral gas nozzle 10 may be greater than or equal to the radius of the substrate W, or less than the radius of the substrate W.

  As shown in FIG. 1, the peripheral gas nozzle 10 is supported by the nozzle arm 32 via a bracket 37 extending downward from the nozzle arm 32. Therefore, the peripheral gas nozzle 10 is supported by the nozzle arm 32 of the third nozzle moving mechanism 31 together with the central gas nozzle 8. The peripheral gas nozzle 10 is fixed with respect to the central gas nozzle 8. That is, the positional relationship between the peripheral gas nozzle 10 and the central gas nozzle 8 is maintained constant. Therefore, the peripheral gas nozzle 10 moves in the horizontal direction and the vertical direction together with the central gas nozzle 8. The peripheral gas nozzle 10 may be connected to a fourth nozzle moving mechanism that is independent of the third nozzle moving mechanism 31.

  As shown in FIG. 1, the peripheral gas nozzle 10 is disposed below the nozzle arm 32. As shown in FIG. 3, at least a part of the peripheral gas nozzle 10 overlaps the nozzle arm 32 in plan view. In FIG. 3, the peripheral gas nozzle 10 and the nozzle arm 32 extend in the same direction in plan view, and the nozzle arm 32 extends from the inner end 10 a of the peripheral gas nozzle 10 to the outer end 10 b of the peripheral gas nozzle 10. The example which overlaps with the area | region by planar view is shown. As shown in FIG. 1, the peripheral gas nozzle 10 is disposed above the outward gas discharge port 23 that opens at the outer peripheral surface 8 a of the central gas nozzle 8. Therefore, the peripheral gas nozzle 10 is disposed above the lower surface 8 b of the central gas nozzle 8.

  The third nozzle moving mechanism 31 includes a processing position (position shown in FIG. 3) where the peripheral gas nozzle 10 overlaps the substrate W in plan view and a retreat position where the peripheral gas nozzle 10 is positioned around the substrate W in plan view. In between, the peripheral gas nozzle 10 is moved horizontally. The processing position is such that the peripheral gas nozzle 10 overlaps a region in the upper surface of the substrate W extending inward in the radial direction of the substrate W from the peripheral edge of the upper surface of the substrate W, and the lower surface of the peripheral gas nozzle 10 is the upper surface of the substrate W. It is a position which opposes an up-down direction at intervals. The processing position of the peripheral gas nozzle 10 is associated with the processing position of the central gas nozzle 8. Therefore, when the central gas nozzle 8 is disposed at the processing position, the peripheral gas nozzle 10 is also disposed at the processing position.

  As shown in FIG. 2, the lower surface of the peripheral gas nozzle 10 that extends in the radial direction of the substrate W while being positioned at the processing position faces the upper surface of the substrate W in parallel. The peripheral gas nozzle 10 includes a peripheral gas discharge port 38 constituted by a plurality of holes 38 a that open on the lower surface of the peripheral gas nozzle 10, and a third flow path 39 connected to the peripheral gas discharge port 38. The processing unit 2 includes a third gas pipe 40 connected to the third flow path 39 and a third gas valve 41 interposed in the third gas pipe 40.

  As shown in FIG. 2, the third flow path 39 is provided inside the peripheral gas nozzle 10. The gas from the third gas pipe 40 is supplied to all the holes 38 a through the third flow path 39. As shown in FIG. 1, the third gas pipe 40 branches from the first gas pipe 27, and is upstream of the first gas valve 28 (on the side opposite to the central gas nozzle 8). It is connected to the. The third gas pipe 40 is connected to a gas supply source common to the first gas pipe 27. Therefore, the gas supplied to the peripheral gas nozzle 10 is the same kind of gas as the gas supplied to the central gas nozzle 8, that is, nitrogen gas.

  As shown in FIG. 2, the peripheral gas discharge ports 38 are, for example, several to several tens of holes 38a. The number of peripheral gas discharge ports 38 is appropriately set according to the size of the substrate W. The plurality of holes 38a constituting the peripheral gas discharge port 38 are arranged in the longitudinal direction of the peripheral gas nozzle 10 (radial direction of the substrate W) with a space therebetween. Therefore, the plurality of holes 38a are arranged at a plurality of positions having different distances from the rotation axis A1. Each of the plurality of holes 38a has the same opening area and is arranged at the same height. The peripheral gas discharge port 38 is not limited to the plurality of holes 38 a, and is a slit extending in the longitudinal direction of the peripheral gas nozzle 10 that is continuous from the inner end portion of the peripheral gas discharge port 38 to the outer end portion of the peripheral gas discharge port 38. May be.

  As shown in FIG. 2, when the third gas valve 41 is opened, the peripheral gas discharge port 38 discharges nitrogen gas supplied from the third flow path 39 toward the upper surface of the substrate W. At this time, each of the plurality of holes 38a constituting the peripheral gas discharge port 38 discharges nitrogen gas toward the substrate W at an equal flow rate (flow velocity). As shown in FIGS. 2 and 4, the gas discharge direction D <b> 1 from the peripheral gas discharge port 38 is a direction perpendicular to the upper surface of the substrate W and the rotation direction Dr of the substrate W. When the third gas valve 41 is opened with the peripheral gas nozzle 10 disposed at the processing position, the nitrogen gas discharged from the peripheral gas discharge port 38 is within the upper surface of the substrate W including the upper surface peripheral portion of the substrate W. It is sprayed uniformly on the area.

  As shown in FIG. 2, the lower surface of the peripheral gas nozzle 10 is disposed around an outward gas discharge port 23 provided on the outer peripheral surface 8 a of the central gas nozzle 8. Therefore, the peripheral gas discharge port 38 provided in the peripheral gas nozzle 10 is disposed around the outward gas discharge port 23. The peripheral gas discharge port 38 may be disposed at a height above or below the outward gas discharge port 23, or may be disposed at a height equal to the outward gas discharge port 23. In any case, the peripheral gas discharge port 38 is disposed above the airflow formed by the nitrogen gas discharged from the outward gas discharge port 23. Therefore, the nitrogen gas discharged from the outward gas discharge port 23 in the state where the central gas nozzle 8 is located at the processing position reaches the peripheral edge of the upper surface of the substrate W without being blocked by the peripheral gas nozzle 10. Therefore, the entire upper surface of the substrate W is covered with nitrogen gas discharged from the central gas nozzle 8.

  As described above, in the state where the central gas nozzle 8 is located at the processing position, the peripheral gas nozzle 10 is also located at the processing position. When both the outward gas discharge port 23 and the downward gas discharge port 24 discharge nitrogen gas in a state where the central gas nozzle 8 is located at the processing position, the entire upper surface of the substrate W is caused by a plurality of layers of airflow overlapping vertically. Covered. When the peripheral gas nozzle 10 discharges nitrogen gas from the peripheral gas discharge port 38 toward the upper surface of the substrate W in a state where the entire upper surface of the substrate W is covered with the air flow of the plurality of layers, the peripheral gas discharge port 38 The discharged nitrogen gas collides with the nitrogen gas discharged from the central gas nozzle 8 and is pushed outward in the radial direction of the substrate W. As a result, the gas floating in the space above the peripheral edge of the substrate W is replaced with nitrogen gas.

  FIG. 5 is a graph showing the relationship between the distance (radius) from the center of the substrate W and the humidity near the upper surface of the substrate W. The area (positive area) on the right side of the center of the substrate W in FIG. 5 indicates the humidity of the space between the peripheral gas nozzle 10 and the substrate W (the space immediately below the peripheral gas nozzle 10). A region on the left side (negative region) from the center of the substrate W indicates the humidity of the space on the opposite side to the peripheral gas nozzle 10.

  The two measurement values of the solid line and the alternate long and short dash line shown in FIG. 5 indicate that the central gas nozzle 8 and the peripheral gas nozzle 10 are positioned at the processing position while the substrate W is rotated by the spin chuck 5. It is a value when nitrogen gas is discharged from both the peripheral gas nozzle 10 and the central gas nozzle 8 alone. That is, the measurement value of the solid line is a value when nitrogen gas is discharged from the outward gas discharge port 23, the downward gas discharge port 24, and the peripheral gas discharge port 38, and the measurement value of the alternate long and short dash line is the outward gas It is a value when nitrogen gas is discharged only from the discharge port 23 and the downward gas discharge port 24.

As shown in FIG. 5, both of the two measured values have a low and constant humidity near the center of the substrate W. This is considered because the lower surface 8b of the central gas nozzle 8 covers the center of the upper surface of the substrate W, and the space between the central gas nozzle 8 and the substrate W is filled with nitrogen gas.
However, when the measured value of the comparative example indicated by the alternate long and short dash line is seen, the humidity increases as the radius increases in the region outside the center of the upper surface of the substrate W. There is a large difference in humidity between the upper surface periphery of W. Also for the measurement values of the example indicated by the solid line, the humidity increases as the radius increases in the region outside the central portion of the upper surface of the substrate W, similarly to the measurement value of the comparative example. However, when two measured values at the same radius in a region outside the central portion of the upper surface of the substrate W are compared, the measured values of the example are lower than the measured values of the comparative example at almost all radii.

  Further, the measured values of the example are lower than the measured values of the comparative example even in the region on the left side of the center of the substrate W in FIG. Therefore, it is considered that the humidity on the substrate W is reduced not only in the space directly under the peripheral gas nozzle 10 but also over the entire circumference of the substrate W. Therefore, by discharging nitrogen gas from both the central gas nozzle 8 and the peripheral gas nozzle 10, the humidity can be lowered at almost all positions above the substrate W.

FIG. 6 is a process diagram for explaining an example of the processing of the substrate W performed by the substrate processing apparatus 1 according to the embodiment of the present invention. Below, the example in which the board | substrate W which has the uneven | corrugated surface in which the nanoscale fine pattern was formed is processed is demonstrated. In the following, reference is made to FIG. Reference is made appropriately to FIG.
When the substrate W is processed, a loading step (step S1 in FIG. 6) for loading the substrate W into the chamber 4 is performed. Specifically, the control device 3 carries the substrate W into the chamber 4 by a transfer robot (not shown) in a state where the configuration inside the chamber 4 such as the chemical nozzle 6 is retracted from above the spin chuck 5. Let Then, the control device 3 causes the transfer robot to place the substrate W on the spin chuck 5 with the surface of the substrate W facing upward. Thereafter, the control device 3 rotates the spin motor 16 while the substrate W is held by the spin chuck 5. Thereby, the rotation of the substrate W is started. The control device 3 retracts the transfer robot from the chamber 4 after the substrate W is placed on the spin chuck 5.

  Next, a chemical solution supply process (step S2 in FIG. 6) for supplying the chemical solution to the substrate W is performed. Specifically, the control device 3 controls the first nozzle moving mechanism 21 to move the chemical nozzle 6 from the retracted position to the processing position. Thereafter, the control device 3 opens the chemical liquid valve 18 and discharges the chemical liquid from the chemical liquid nozzle 6 toward the upper surface of the rotating substrate W. In this state, the control device 3 controls the first nozzle moving mechanism 21 to move the chemical liquid landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion. When a predetermined time elapses after the chemical liquid valve 18 is opened, the control device 3 closes the chemical liquid valve 18 and stops the discharge of the chemical liquid from the chemical liquid nozzle 6. Thereafter, the control device 3 controls the first nozzle moving mechanism 21 to retract the chemical nozzle 6 from above the spin chuck 5.

  The chemical liquid discharged from the chemical liquid nozzle 6 lands on the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W by centrifugal force. Thereby, a liquid film of a chemical solution covering the entire upper surface of the substrate W is formed, and the chemical solution is supplied to the entire upper surface of the substrate W. Therefore, the entire upper surface of the substrate W is processed with the chemical solution. Furthermore, since the control device 3 moves the liquid solution landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion while the substrate W is rotating, the liquid solution landing position is the substrate W The entire upper surface of the substrate W is scanned (scanned). Therefore, the chemical solution discharged from the chemical solution nozzle 6 is directly sprayed over the entire upper surface of the substrate W, and the entire upper surface of the substrate W is processed uniformly.

  Next, a rinsing liquid supply step (step S3 in FIG. 6) for supplying pure water, which is an example of the rinsing liquid, to the substrate W is performed. Specifically, the control device 3 controls the second nozzle moving mechanism 22 to move the rinse liquid nozzle 7 from the retracted position to the processing position. Thereafter, the control device 3 opens the rinse liquid valve 20 and discharges pure water from the rinse liquid nozzle 7 toward the upper surface of the rotating substrate W. In this state, the control device 3 controls the second nozzle moving mechanism 22 to move the pure water landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion.

  Similarly to the chemical liquid discharged from the chemical liquid nozzle 6, the pure water discharged from the rinse liquid nozzle 7 lands on the upper surface of the substrate W and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the chemical solution on the substrate W is washed away by pure water and discharged around the substrate W. As a result, the chemical solution on the substrate W is washed away with pure water, and the liquid film of the chemical solution on the substrate W is replaced with a pure water liquid film covering the entire upper surface of the substrate W. Furthermore, since the controller 3 moves the pure water landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion while the substrate W is rotating, the pure water landing position is The entire upper surface of the substrate W is scanned and the entire upper surface of the substrate W is scanned. Therefore, the pure water discharged from the rinsing liquid nozzle 7 is directly sprayed over the entire upper surface of the substrate W, and the entire upper surface of the substrate W is processed uniformly.

  Next, a paddle process for holding the liquid film of the rinsing liquid on the substrate W in a state where the supply of the rinsing liquid to the substrate W is stopped (step S4 in FIG. 6). Specifically, the control device 3 controls the spin chuck 5 to stop the rotation of the substrate W in the state where the entire upper surface of the substrate W is covered with the pure water liquid film, or the rinsing liquid. The rotational speed of the substrate W is lowered to a low rotational speed (for example, 10 to 30 rpm) lower than the rotational speed in the supplying step. For this reason, the centrifugal force acting on the rinse liquid on the substrate W is weakened, and the amount of the rinse liquid discharged from the substrate W is reduced. The control device 3 closes the rinsing liquid valve 20 and stops the discharge of pure water from the rinsing liquid nozzle 7 while the substrate W is stationary or the substrate W is rotating at a low rotational speed. Thus, a pure water liquid film covering the entire upper surface of the substrate W is held on the substrate W in a state where the supply of pure water to the substrate W is stopped. After stopping the supply of pure water to the substrate W, the control device 3 controls the second nozzle moving mechanism 22 to retract the rinse liquid nozzle 7 from above the spin chuck 5.

  Next, a substrate covering step (step S5 in FIG. 6) for forming an airflow flowing along the upper surface of the substrate W is started. Specifically, the control device 3 controls the third nozzle moving mechanism 31 to move the central gas nozzle 8 from the retracted position to the processing position. Thereby, the center gas nozzle 8 and the peripheral gas nozzle 10 are arrange | positioned in each processing position. That is, the central gas nozzle 8 is disposed above the central portion of the substrate W, and the peripheral gas nozzle 10 is disposed above the substrate W around the central gas nozzle 8. Further, since the solvent nozzle 9 is disposed inside the central gas nozzle 8, the solvent nozzle 9 is also disposed above the central portion of the substrate W.

  The control device 3 opens the first gas valve 28 and the second gas valve 30 in a state where the central gas nozzle 8 and the peripheral gas nozzle 10 are located above the substrate W, and supplies nitrogen gas to the central gas nozzle 8. Discharge. As a result, an air flow of nitrogen gas is formed which flows radially outward in the radial direction along the pure water liquid film covering the entire upper surface of the substrate W. Further, the control device 3 opens the third gas valve 41 in this state, and the nitrogen gas from the peripheral gas nozzle 10 toward the region in the upper surface of the substrate W extending radially inward from the peripheral surface of the upper surface of the substrate W. To discharge. The nitrogen gas discharged from the peripheral gas nozzle 10 collides with the nitrogen gas discharged from the central gas nozzle 8 and is pushed outward in the radial direction of the substrate W without penetrating the airflow formed by the central gas nozzle 8. It is.

  When a processing liquid such as a chemical liquid or a rinsing liquid is supplied to the substrate W, a gas containing water such as a chemical liquid or a rinsing liquid is generated in the chamber 4, and this atmosphere drifts in the chamber 4. The gas (gas containing water) drifting in the space above the substrate W is swept outward in the radial direction by the nitrogen gas discharged from the central gas nozzle 8. Thereby, the gas containing moisture is discharged from above the substrate W. Furthermore, since the peripheral gas nozzle 10 discharges nitrogen gas toward the upper surface peripheral portion of the substrate W, the gas floating in the space above the peripheral portion of the substrate W is combined with the nitrogen gas discharged from the peripheral gas nozzle 10. Then, it collides with the air flow formed by the central gas nozzle 8 and is swept around the substrate W. Thereby, the gas containing moisture is reliably discharged from the space above the peripheral edge of the substrate W.

  Next, a solvent supply process (step S6 in FIG. 6) for supplying IPA (liquid), which is an example of an organic solvent uniformly mixed with pure water, to the substrate W is performed in parallel with the substrate coating process. Specifically, the control device 3 opens the solvent valve 36 in a state where the substrate W is rotating and the central gas nozzle 8 and the peripheral gas nozzle 10 are discharging nitrogen gas, thereby rotating the substrate W in the rotating state. IPA is discharged from the solvent nozzle 9 toward the center of the upper surface of the substrate. The IPA discharged from the solvent nozzle 9 lands on the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W by centrifugal force. Since IPA has high affinity with pure water, the pure water on the substrate W easily dissolves in the IPA. Therefore, the pure water liquid film on the substrate W is replaced with an IPA liquid film covering the entire upper surface of the substrate W. When a predetermined time elapses after the solvent valve 36 is opened, the control device 3 closes the solvent valve 36 and stops the discharge of IPA from the solvent nozzle 9.

  Next, a drying process (step S7 in FIG. 6) for drying the substrate W is performed in parallel with the substrate coating process. Specifically, the control device 3 controls the spin chuck 5 to change the rotation speed of the substrate W to a high rotation speed (for example, the central gas nozzle 8 and the peripheral gas nozzle 10 are discharging nitrogen gas). Up to several thousand rpm). Accordingly, the substrate W is dried in a state where the entire upper surface of the substrate W is covered with nitrogen gas, that is, in a state where the atmosphere on the substrate W is maintained at a low humidity over the entire region.

  More specifically, as shown in FIG. 5, the space is covered with the central gas nozzle 8 and is supplied with nitrogen gas from the central gas nozzle 8 (in FIG. Humidity is low in a certain part). In the space outside the central portion of the substrate W, the humidity increases as the distance from the central portion of the substrate W increases. However, supply of nitrogen gas from the peripheral gas nozzle 10 suppresses the increase in humidity in this space. ing. Therefore, the substrate W is dried in a low-humidity atmosphere, and the generation of watermarks is suppressed or prevented.

  The control device 3 stops the rotation of the substrate W by controlling the spin chuck 5 after the liquid is removed from the substrate W and the substrate W is dried. Further, the control device 3 closes the first gas valve 28, the second gas valve 30, and the third gas valve 41, and stops the discharge of nitrogen gas from the central gas nozzle 8 and the peripheral gas nozzle 10 (FIG. 6). Step S8 of (End of substrate coating step).

  Next, an unloading step (Step S9 in FIG. 6) for unloading the substrate W from the chamber 4 is performed. Specifically, the control device 3 retreats the central gas nozzle 8 and the peripheral gas nozzle 10 from above the substrate W by controlling the third nozzle moving mechanism 31. Thereafter, the control device 3 causes the transfer robot to enter the chamber 4 in a state where the configuration in the chamber 4 such as the chemical solution nozzle 6 is retracted from above the spin chuck 5. Then, the control device 3 causes the transfer robot to hold the substrate W on the spin chuck 5. Thereafter, the control device 3 causes the substrate W to be carried out of the chamber 4 by the transfer robot.

  As described above, in this embodiment, the small central gas nozzle 8 that partially covers the substrate W in plan view discharges gas above the substrate W. As a result, an airflow that spreads radially from the center of the upper surface of the substrate W to the peripheral edge of the upper surface of the substrate W along the upper surface of the substrate W is formed above the substrate W. This area is covered by this air flow. Thereby, the upper surface of the substrate W is protected from particles and mist.

  Similarly to the central gas nozzle 8, the peripheral gas nozzle 10 disposed above the substrate W covers the substrate W together with the central gas nozzle 8 and protects the upper surface of the substrate W. Further, the peripheral gas nozzle 10 discharges gas from above the airflow formed by the central gas nozzle 8 toward the upper surface peripheral portion of the substrate W. The gas drifting in the space above the peripheral edge of the substrate W flows toward the substrate W together with the gas discharged from the peripheral gas nozzle 10 and collides with the gas discharged from the central gas nozzle 8. These gases are pushed outward by the gas discharged from the central gas nozzle 8. As a result, the gas floating in the space above the peripheral edge of the substrate W is replaced with the gas discharged from the peripheral gas nozzle 10.

  Since the gas drifting in the space above the peripheral edge of the substrate W is immediately discharged from this space, the vapor generated by the evaporation of the liquid on the substrate W is pushed outward by the gas discharged from the central gas nozzle 8. Even if this occurs, an increase in humidity at the periphery of the upper surface of the substrate W can be suppressed. Actually, as shown in FIG. 5, the humidity at the peripheral edge of the upper surface of the substrate W is lower than when the peripheral gas nozzle 10 is not used. Furthermore, it was confirmed that the drying time was shortened compared with the case where the peripheral gas nozzle 10 was not used, and the number of particles adhering to the substrate W on which the process shown in FIG. 6 was performed was reduced. Therefore, by using both the central gas nozzle 8 and the peripheral gas nozzle 10, the collapse of the pattern can be suppressed or prevented, and the cleanliness of the substrate W can be increased.

  In the present embodiment, the outer peripheral surface 8a of the central gas nozzle 8 having a diameter smaller than that of the substrate W surrounds a vertical line (rotation axis A1) passing through the central portion of the upper surface of the substrate W, and is continuous annularly over the entire periphery. An outward gas discharge port 23 opens at the outer peripheral surface 8 a of the central gas nozzle 8. The outward gas discharge port 23 discharges gas toward the periphery of the central gas nozzle 8. As a result, an annular airflow is formed that spreads radially from the center of the upper surface of the substrate W to the peripheral edge of the upper surface of the substrate W along the upper surface of the substrate W. Furthermore, since the outward gas discharge port 23 discharges gas outward, the gas discharged from the outward gas discharge port 23 spreads outward almost without changing its direction. Therefore, the flow velocity at the peripheral edge of the upper surface of the substrate W can be increased as compared with the case where the gas discharged from the central gas nozzle 8 collides with the substrate W and spreads outward along the upper surface of the substrate W. Thereby, the upper surface peripheral part of the board | substrate W can be protected reliably.

  In the present embodiment, the central gas nozzle 8 and the peripheral gas nozzle 10 are held by a common nozzle arm 32. Therefore, the number of parts of the substrate processing apparatus 1 can be reduced as compared with the case where the central gas nozzle 8 and the peripheral gas nozzle 10 are held by separate nozzle arms. Furthermore, since the nozzle arm 32 is disposed at a position higher than the peripheral gas nozzle 10 and overlaps at least a part of the peripheral gas nozzle 10 in a plan view, the nozzle arm 32 and the peripheral gas nozzle 10 are viewed in a plan view. The area occupied by the nozzle arm 32 and the peripheral gas nozzle 10 can be reduced as compared with the case where they do not overlap with each other. Thereby, the substrate processing apparatus 1 can be reduced in size. Moreover, since the peripheral gas nozzle 10 and the nozzle arm 32 overlap in plan view, the area of an obstacle that hinders the downflow flowing toward the substrate W can be reduced.

  In the present embodiment, the peripheral gas nozzle 10 is miniaturized in a bar shape extending in the radial direction of the substrate W in plan view, and the nozzle arm 32 extends from the inner end 10 a of the peripheral gas nozzle 10 to the peripheral gas nozzle 10. It overlaps with the area | region to the outer end part 10b of planar view. Thereby, the space below the nozzle arm 32 is utilized more efficiently. Therefore, the exclusive area of the nozzle arm 32 and the peripheral gas nozzle 10 can be further reduced, and thereby the substrate processing apparatus 1 can be further downsized. Furthermore, since the area of the obstacle that hinders the downflow flowing toward the substrate W can be further reduced, the stability of the airflow on the substrate W can be enhanced.

  Further, in the present embodiment, the peripheral gas discharge port 38 is configured by a plurality of holes 38 a arranged in the radial direction of the substrate W, and extends from the peripheral edge of the upper surface of the substrate W inward in the radial direction of the substrate W. It faces the region in the upper surface of the top and bottom. Therefore, the peripheral gas discharge port 38 discharges gas not only to the peripheral portion on the upper surface of the substrate W but also to the inner region thereof. For this reason, not only the humidity at the peripheral edge of the upper surface of the substrate W but also an increase in humidity in its inner region can be suppressed. Thereby, the drying time of the board | substrate W can be shortened and the dispersion | variation in the drying speed within the upper surface of the board | substrate W can be reduced.

  In the present embodiment, after a processing solution such as a chemical solution, a rinsing solution, and an organic solvent is supplied to the substrate W, the spin motor 16 rotates the substrate W held on the spin chuck 5 at a high speed. Thereby, the processing liquid is removed from the substrate W, and the substrate W is dried (drying step). The control device 3 discharges gas from the central gas nozzle 8 and the peripheral gas nozzle 10 in parallel with the drying process. Therefore, the substrate W is dried in a state where the atmosphere on the substrate W is maintained at a low humidity over the entire upper surface of the substrate W. Therefore, the drying time of the substrate W can be shortened, and variations in the drying speed within the upper surface of the substrate W can be reduced. Thereby, collapse of a pattern can be suppressed or prevented.

Although the description of the embodiment of the present invention has been described above, the present invention is not limited to the contents of the above-described embodiment, and various modifications can be made within the scope of the claims.
For example, in the above-described embodiment, the case where the peripheral gas nozzle 10 discharges gas in a direction perpendicular to the upper surface of the substrate W with respect to the rotation direction Dr and the radial direction of the substrate W has been described. However, as shown in FIG. 7, the discharge direction D2 of the gas from the peripheral gas nozzle 10 rotates the substrate W relative to the vertical direction so as to go downstream from the peripheral gas nozzle 10 in the rotation direction Dr of the substrate W. It may be inclined in the direction Dr. Further, as shown in FIG. 8, the gas discharge direction D3 from the peripheral gas nozzle 10 may be inclined in the radial direction of the substrate W with respect to the vertical direction so as to be away from the center of the upper surface of the substrate W. . In this case, the gas discharge direction from the peripheral gas nozzle 10 may be inclined in both the rotation direction Dr and the radial direction of the substrate W, or only in one of the rotation direction Dr and the radial direction of the substrate W. It may be.

  When the discharge direction of the gas from the peripheral gas nozzle 10 is inclined in the rotation direction Dr of the substrate W with respect to the vertical direction so as to go downstream from the peripheral gas nozzle 10 in the rotation direction Dr of the substrate W, the peripheral gas The nozzle 10 discharges gas in a direction inclined in the rotation direction Dr of the substrate W with respect to the vertical direction so as to go downstream from the peripheral gas nozzle 10 in the rotation direction Dr of the substrate W. Therefore, the gas discharged from the peripheral gas nozzle 10 flows toward the upper surface of the substrate W and flows downstream in the rotation direction Dr of the substrate W. That is, the peripheral gas nozzle 10 forms an airflow that flows along the airflow generated on the substrate W as the substrate W rotates. Therefore, a stable airflow is formed on the substrate W, and the upper surface of the substrate W is reliably covered with the gas discharged from the peripheral gas nozzle 10. Thereby, the upper surface of the substrate W is reliably protected.

  In addition, when the gas discharge direction from the peripheral gas nozzle 10 is inclined in the radial direction of the substrate W with respect to the vertical direction so as to be away from the center of the upper surface of the substrate W, the peripheral gas nozzle 10 is the peripheral gas nozzle. A gas is discharged from 10 to the outside of the substrate W in the radial direction. The gas discharged from the central gas nozzle 8 flows outward along the upper surface of the substrate W. Therefore, the peripheral gas nozzle 10 forms an airflow that flows along the airflow formed by the central gas nozzle 8. Therefore, a stable airflow is formed on the substrate W, and the upper surface of the substrate W is reliably covered with the gas discharged from the central gas nozzle 8 and the peripheral gas nozzle 10. Thereby, the upper surface of the substrate W is reliably protected.

Moreover, although the above-mentioned embodiment demonstrated the case where the nozzle arm 32 overlapped with the whole peripheral gas nozzle 10 by planar view, you may overlap only a part of peripheral gas nozzle 10 by planar view.
Moreover, although the above-mentioned embodiment demonstrated the case where gas was discharged at the same speed from each of the some hole 38a which comprises the peripheral gas discharge port 38 of the peripheral gas nozzle 10, peripheral gas nozzle 10 is peripheral gas. The gas may be discharged from the outer end portion of the peripheral gas discharge port 38 toward the upper surface peripheral portion of the substrate W at a flow rate faster than the flow rate of the gas discharged from the inner end portion of the discharge port 38. The flow rate of the gas discharged from the central gas nozzle 8 decreases as the distance from the central gas nozzle 8 increases. That is, the flow velocity of the gas discharged from the central gas nozzle 8 is reduced at the peripheral edge of the upper surface of the substrate W. Therefore, by discharging the gas from the peripheral gas nozzle 10 at high speed toward the peripheral edge of the upper surface of the substrate W, the peripheral edge of the upper surface of the substrate W can be reliably protected with the airflow.

  Moreover, although the above-mentioned embodiment demonstrated the case where the number of the peripheral gas nozzles 10 provided in the processing unit 2 was one, even if the several peripheral gas nozzle 10 was provided in each processing unit 2. FIG. Good. For example, the plurality of peripheral gas nozzles 10 may be arranged at the same height around the central gas nozzle 8. In this case, the plurality of peripheral gas nozzles 10 may be arranged at regular intervals in the direction around the central gas nozzle 8 (rotation direction Dr of the substrate W), or may be arranged at irregular intervals.

Moreover, although the 3rd gas piping 40 connected to the peripheral gas nozzle 10 branched from the 1st gas piping 27 in the above-mentioned embodiment, the 3rd gas piping 40 was 1st gas piping. 27 may not be branched and may be connected to a pipe different from the first gas pipe 27.
In the above-described embodiment, the case where the same kind of gas is discharged from the central gas nozzle 8 and the peripheral gas nozzle 10 has been described. However, different types of gases are discharged from the central gas nozzle 8 and the peripheral gas nozzle 10. May be. Naturally, different types of gases may be discharged from the outward gas discharge port 23 and the downward gas discharge port 24 of the central gas nozzle 8.

In the above-described embodiment, the case where the substrate W is dried after the pure water on the substrate W is replaced with IPA has been described. However, the pure water is not replaced with IPA, but the pure water is transferred to the substrate. The substrate W may be dried by rotating the substrate W at a high speed while being held on the W.
In addition, various design changes can be made within the scope of matters described in the claims.

1: Substrate processing device 3: Control device (control means)
5: Spin chuck (substrate holding means)
6: Chemical nozzle (treatment liquid supply means)
7: Rinse liquid nozzle (treatment liquid supply means)
8: Central gas nozzle 8a: Outer peripheral surface 8b: Lower surface 9: Solvent nozzle (treatment liquid supply means)
10: Peripheral gas nozzle 16: Spin motor (substrate rotating means)
23: Outward gas discharge port 24: Downward gas discharge port 31: Third nozzle moving mechanism 32: Nozzle arm 38: Peripheral gas discharge port 38a: Multiple holes A1: Rotation axis D1: Discharge direction D2: Discharge direction D3: Discharge Direction Dr: Direction of rotation W: Substrate

Claims (10)

Substrate holding means for holding a disk-shaped substrate in a horizontal posture;
Disposed above the substrate held by the substrate holding means, is smaller than the substrate in plan view, and discharges gas above the substrate, thereby allowing the center of the upper surface of the substrate along the upper surface of the substrate. A central gas nozzle that forms a radially extending air flow from the peripheral edge of the upper surface of the substrate;
And a peripheral gas nozzle that is disposed above the substrate held by the substrate holding means and discharges gas from above the airflow formed by the central gas nozzle toward the upper peripheral edge of the substrate. apparatus.   The central gas nozzle surrounds a vertical line passing through the center of the upper surface of the substrate held by the substrate holding means, and has a cylindrical outer peripheral surface having a diameter smaller than that of the substrate, and is opened at the outer peripheral surface. The substrate processing apparatus according to claim 1, further comprising an annular outward gas discharge port continuous over the entire circumference of the outer peripheral surface.   The center gas nozzle and the peripheral gas nozzle are supported, and further includes a nozzle arm disposed above the peripheral gas nozzle so as to overlap at least a part of the peripheral gas nozzle in plan view. 2. The substrate processing apparatus according to 2. The peripheral gas nozzle has a rod shape extending in a radial direction of the substrate in plan view,
The substrate processing apparatus according to claim 3, wherein the nozzle arm overlaps a region from an inner end portion of the peripheral gas nozzle to an outer end portion of the peripheral gas nozzle in a plan view.   The peripheral gas nozzle is a plurality of holes arranged in the radial direction of the substrate or a slit extending in the radial direction of the substrate, and the upper surface of the substrate extending inward in the radial direction of the substrate from the upper peripheral edge of the substrate The substrate processing apparatus as described in any one of Claims 1-4 containing the peripheral gas discharge port which opposes an up-down direction in the area | region inside.   The substrate according to claim 5, wherein the peripheral gas nozzle discharges gas from an outer end portion of the peripheral gas discharge port at a flow rate faster than a flow rate of gas discharged from the inner end portion of the peripheral gas discharge port. Processing equipment. The substrate processing apparatus further includes a substrate rotating unit that rotates the substrate around a vertical line passing through a central portion of the upper surface of the substrate held by the substrate holding unit,
The peripheral gas nozzle discharges gas in a discharge direction from the peripheral gas nozzle toward the upper surface of the substrate,
The substrate processing according to claim 1, wherein the discharge direction is inclined in the rotation direction with respect to a vertical direction so as to go downstream from the peripheral gas nozzle in the rotation direction of the substrate. apparatus. The peripheral gas nozzle discharges gas in a discharge direction from the peripheral gas nozzle toward the upper surface of the substrate,
The substrate processing apparatus according to claim 1, wherein the discharge direction is inclined in a radial direction of the substrate with respect to a vertical direction so as to be separated from a central portion of the upper surface of the substrate. Treatment liquid supply means for supplying a treatment liquid to the upper surface of the substrate held by the substrate holding means;
Substrate rotating means for rotating the substrate around a vertical line passing through the center of the upper surface of the substrate held by the substrate holding means;
A control means for controlling the central gas nozzle, the peripheral gas nozzle, the processing liquid supply means, and the substrate rotating means,
The control means includes
A treatment liquid supply step of supplying a treatment liquid from the treatment liquid supply means to the upper surface of the substrate;
By discharging the gas from the central gas nozzle, an air flow that radially spreads from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate is formed on the substrate, and above the air flow formed by the central gas nozzle. A substrate coating step of discharging gas from the peripheral gas nozzle toward the peripheral edge of the upper surface of the substrate;
After the treatment liquid supply step, in parallel with the substrate coating step, the substrate is dried by removing the treatment liquid adhering to the substrate by rotating the substrate by the substrate rotation means. The substrate processing apparatus as described in any one of Claims 1-8 which performs a process. A treatment liquid supply step of supplying the treatment liquid from the treatment liquid supply means to the upper surface of the substrate held in a horizontal posture by the substrate holding means;
Disposed above the substrate held by the substrate holding means, is smaller than the substrate in plan view, and discharges gas above the substrate, thereby allowing the center of the upper surface of the substrate along the upper surface of the substrate. The gas is discharged from a central gas nozzle that forms a radially expanding airflow to the peripheral edge of the upper surface of the substrate, and the gas is discharged from above the airflow formed by the central gas nozzle toward the peripheral edge of the upper surface of the substrate. A substrate coating step of discharging gas from the peripheral gas nozzle toward the peripheral edge of the upper surface of the substrate;
Rotation of the substrate by the substrate rotation means for rotating the substrate around a vertical line passing through the center of the upper surface of the substrate held by the substrate holding means in parallel with the substrate coating process after the treatment liquid supply step. And a drying step of drying the substrate by removing the processing liquid adhering to the substrate from the substrate.

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