TW202228241A - Non-cassette wafer rotating mechanism capable of solving contamination problem of transmission mechanism - Google Patents

Non-cassette wafer rotating mechanism capable of solving contamination problem of transmission mechanism Download PDF

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TW202228241A
TW202228241A TW110100102A TW110100102A TW202228241A TW 202228241 A TW202228241 A TW 202228241A TW 110100102 A TW110100102 A TW 110100102A TW 110100102 A TW110100102 A TW 110100102A TW 202228241 A TW202228241 A TW 202228241A
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spin column
rotating mechanism
boatless
wafer rotating
etching
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TW110100102A
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Chinese (zh)
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TWI752786B (en
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顏錫銘
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錫宬國際股份有限公司
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Abstract

A non-cassette wafer rotating mechanism comprises: an etching tank, a rotary column, an impeller member, and a pump, wherein the rotary column is provided with a plurality of rotary column carrying grooves arranged in parallel along the axial direction. The impeller member is disposed at one end of the rotary column; the pump has an liquid inlet and a liquid outlet, wherein the liquid inlet is communicated with an input port of the etching tank, and the input port is adjacent to the impeller member, so that the impeller member is pushed for rotating by the chemical liquid driven by the pump. The non-cassette wafer rotating mechanism of the present invention may solve the contamination problem of transmission mechanism.

Description

無晶舟晶片旋轉機構Boatless wafer rotation mechanism

本發明係關於一種濕式蝕刻機台,更特別的是關於一種無晶舟晶片旋轉機構。The present invention relates to a wet etching machine, more particularly to a boatless wafer rotating mechanism.

半導體領域的蝕刻製程可分為乾式蝕刻與濕式蝕刻,其中濕式蝕刻具有很好的蝕刻選擇性,廣泛應用於晶圓的氧化物清潔、殘留物移除、表面層剝離等領域。在蝕刻製程中,通常將25片或50片的晶圓浸沒於蝕刻槽中的蝕刻用藥液(例如氫氟酸)。而考慮到蝕刻的均一性,濕式蝕刻機台會盡可能攪拌蝕刻用藥液並使晶圓轉動。The etching process in the semiconductor field can be divided into dry etching and wet etching. Among them, wet etching has good etching selectivity and is widely used in the fields of oxide cleaning, residue removal, and surface layer peeling of wafers. During the etching process, 25 or 50 wafers are usually immersed in an etching solution (such as hydrofluoric acid) in an etching tank. Considering the uniformity of etching, the wet etching machine will stir the etching solution as much as possible and rotate the wafer.

然而,傳統的機械式傳動容易產生微粒,進而汙染藥液及晶圓。若使用磁力傳動,則易受溫度的影響而不穩定,並且蝕刻槽體的厚度也會限制磁力傳動。However, the traditional mechanical transmission is prone to generate particles, which in turn contaminate the chemical liquid and the wafer. If magnetic transmission is used, it is easily affected by temperature and becomes unstable, and the thickness of the etched tank body will also limit the magnetic transmission.

因此,為解決習知的濕式蝕刻機台的種種問題,本發明提出一種無晶舟晶片旋轉機構。Therefore, in order to solve various problems of the conventional wet etching machine, the present invention provides a boatless wafer rotating mechanism.

為達上述目的及其他目的,本發明提出一種無晶舟晶片旋轉機構,其包含:一蝕刻槽;一旋柱,設置於該蝕刻槽中,該旋柱具有沿軸向方向平行排列的複數旋柱承載溝槽;至少一葉輪構件,設置於該旋柱的一端;以及一泵,具有一液體入口及一液體出口,其中,該液體出口連通至該蝕刻槽的一輸入口,該輸入口鄰近於該葉輪構件,該葉輪構件及該旋柱經由該泵所帶動的藥液而被推動旋轉。In order to achieve the above purpose and other purposes, the present invention provides a boatless wafer rotating mechanism, which includes: an etching groove; a column carrying groove; at least one impeller member disposed at one end of the spin column; and a pump having a liquid inlet and a liquid outlet, wherein the liquid outlet communicates with an input port of the etching tank, the input port is adjacent to the In the impeller member, the impeller member and the spin column are pushed and rotated by the liquid medicine driven by the pump.

於本發明之一實施例中,該旋柱承載溝槽的底部的周緣距離該旋柱的旋轉中心為非等距,而形成至少一頂推角。In an embodiment of the present invention, the peripheral edge of the bottom of the spin column bearing groove is not equidistant from the rotation center of the spin column to form at least one thrust angle.

於本發明之一實施例中,該旋柱承載溝槽沿該旋柱的徑向方向上的剖面,具有複數圓弧段及複數平直段,該等圓弧段及該等平直段交錯設置而形成該頂推角。In one embodiment of the present invention, the cross section of the spin column bearing groove along the radial direction of the spin column has a plurality of circular arc segments and a plurality of straight segments, and the circular arc segments and the straight segments are staggered. set to form the push angle.

於本發明之一實施例中,該旋柱承載溝槽沿該旋柱的徑向方向上的剖面,具有四圓弧段及四平直段。In an embodiment of the present invention, the cross section of the spin column bearing groove along the radial direction of the spin column has four arc segments and four straight segments.

於本發明之一實施例中,該葉輪構件數量為二,分別設置於該旋柱的相對二端。In an embodiment of the present invention, the number of the impeller components is two, which are respectively disposed at opposite ends of the spin column.

於本發明之一實施例中,該蝕刻槽具有二該輸入口,分別設置鄰近於該等葉輪構件。In an embodiment of the present invention, the etching tank has two input ports, which are respectively disposed adjacent to the impeller members.

於本發明之一實施例中,該蝕刻槽更具有一回流口,連通於該液體入口。In an embodiment of the present invention, the etching tank further has a return port, which is communicated with the liquid inlet.

於本發明之一實施例中,更包含至少二支撐柱,該等支撐柱平行設置於該旋柱的兩側,該等支撐柱分別具有沿軸向方向平行排列的複數旋柱承載溝槽。In one embodiment of the present invention, at least two supporting columns are further included, the supporting columns are disposed parallel to both sides of the spin column, and the supporting columns respectively have a plurality of spin column bearing grooves arranged in parallel along the axial direction.

於本發明之一實施例中,更包含一承載架體,該旋柱及該葉輪構件設置於該承載架體,該承載架體設置於該蝕刻槽。In an embodiment of the present invention, it further includes a carrier body, the spin column and the impeller member are disposed in the carrier rack body, and the carrier rack body is disposed in the etching groove.

藉此,本發明的無晶舟晶片旋轉機構,利用蝕刻本身所使用的藥液推動葉輪構件,使晶圓均勻地接觸到藥液,不會因蝕刻槽內的藥液的濃度不均、沉澱或其他因速,導致單片晶圓內各處的蝕刻速率有所偏差。因此,可提升晶圓的蝕刻均一性。而藥液推動葉輪構件的方式不產生微粒汙染,亦不受溫度及槽體的厚度而影響穩定性。Thereby, the boatless wafer rotating mechanism of the present invention uses the chemical used in the etching itself to push the impeller member, so that the wafer evenly contacts the chemical, and will not be caused by uneven concentration of the chemical in the etching tank. or other speed factors, resulting in deviations in the etch rate everywhere within a single wafer. Therefore, the etching uniformity of the wafer can be improved. The way that the liquid medicine pushes the impeller components does not produce particle pollution, and the stability is not affected by the temperature and the thickness of the tank body.

為充分瞭解本發明,茲藉由下述具體之實施例,並配合所附之圖式,對本發明做一詳細說明。本領域技術人員可由本說明書所公開的內容瞭解本發明的目的、特徵及功效。須注意的是,本發明可透過其他不同的具體實施例加以施行或應用,本說明書中的各項細節亦可基於不同觀點與應用,在不悖離本發明的精神下進行各種修飾與變更。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的申請專利範圍。說明如後:In order to fully understand the present invention, the present invention is described in detail by the following specific embodiments and the accompanying drawings. Those skilled in the art can understand the objects, features and effects of the present invention from the contents disclosed in this specification. It should be noted that the present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the spirit of the present invention. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of the patent application of the present invention. The description is as follows:

如圖1所示,本發明實施例之無晶舟晶片旋轉機構100,其包含:一蝕刻槽1、一旋柱2、至少一葉輪構件3及一泵4。無晶舟指的是不需要仰賴晶舟裝載晶片。As shown in FIG. 1 , a boatless wafer rotating mechanism 100 according to an embodiment of the present invention includes an etching tank 1 , a spin column 2 , at least one impeller member 3 and a pump 4 . Boatless means that there is no need to rely on a boat to load wafers.

蝕刻槽1為上方具有開口之槽體,槽體內可注入蝕刻用藥液,並置放待蝕刻之晶圓P或其他基板。The etching tank 1 is a tank body with an opening above. The etching liquid can be injected into the tank, and the wafer P or other substrates to be etched are placed.

旋柱2設置於蝕刻槽1中,如圖2所示,旋柱2具有沿軸向方向平行排列的複數旋柱承載溝槽21。晶圓P可平行置放於這些旋柱承載溝槽21中,而保持一定的間距浸泡於蝕刻槽1。藉由旋柱2的複數旋柱承載溝槽21,晶圓P不需要另外在放置於一卡匣中,而可直接置於蝕刻槽1中。The spin column 2 is disposed in the etching groove 1 . As shown in FIG. 2 , the spin column 2 has a plurality of spin column bearing grooves 21 arranged in parallel along the axial direction. The wafers P can be placed in parallel in these spin column bearing grooves 21 and soaked in the etching groove 1 with a certain distance. Due to the plurality of spin columns supporting the grooves 21 of the spin column 2 , the wafer P does not need to be placed in a cassette, but can be directly placed in the etching groove 1 .

至少一葉輪構件3,設置於旋柱2的一端。在本實施例中,葉輪構件3共有二個,分別設置於旋柱2的相對二端。At least one impeller member 3 is arranged at one end of the spin column 2 . In this embodiment, there are two impeller members 3 , which are respectively disposed at opposite ends of the spin column 2 .

如圖1所示,泵4外接於蝕刻槽1之外。泵4包括一泵殼體41,泵殼體41具有一液體入口411及一液體出口412。As shown in FIG. 1 , the pump 4 is outside the etching tank 1 . The pump 4 includes a pump housing 41 having a liquid inlet 411 and a liquid outlet 412 .

流體(包含蝕刻用藥液)從液體入口411進入泵殼體41中,泵4提供動力以推動流體從液體出口412流出,液體出口412連通至蝕刻槽1的一輸入口11。輸入口11鄰近於葉輪構件3,使得葉輪構件3經由泵4所帶動的藥液而被推動旋轉。葉輪構件3旋轉則帶動旋柱2旋轉,因此蝕刻槽1中的晶圓P在槽體內隨著旋柱2而轉動,以均勻地接觸到藥液,不會因蝕刻槽1內的藥液的濃度不均、沉澱或其他因速,導致單片晶圓P內各處的蝕刻速率有所偏差。因此,可提升晶圓P的蝕刻均一性。The fluid (including the etching liquid) enters the pump housing 41 from the liquid inlet 411 , and the pump 4 provides power to push the fluid to flow out from the liquid outlet 412 , which is connected to an input port 11 of the etching tank 1 . The input port 11 is adjacent to the impeller member 3 , so that the impeller member 3 is pushed and rotated by the liquid medicine driven by the pump 4 . The rotation of the impeller member 3 drives the spin column 2 to rotate, so the wafer P in the etching tank 1 rotates along with the spin column 2 in the tank, so as to contact the chemical liquid evenly, and will not be affected by the chemical liquid in the etching tank 1. Due to uneven concentration, precipitation or other factors, the etching rate varies from place to place in a single wafer P. Therefore, the etching uniformity of the wafer P can be improved.

綜上所述,本發明的無晶舟晶片旋轉機構100,利用所使用的蝕刻用藥液來推動葉輪構件3,傳動過程不造成微粒汙染,亦幫助晶圓P蝕刻均勻。To sum up, the boatless wafer rotating mechanism 100 of the present invention utilizes the used etching liquid to push the impeller member 3 , so that the transmission process does not cause particle pollution and also helps the wafer P to be etched uniformly.

圖3A係為圖2沿A-A線段之剖面示意圖。進一步地,如圖2及圖3A所示,在本實施例中,旋柱承載溝槽21的底部的周緣距離旋柱2的旋轉中心C為非等距,而形成至少一頂推角211。換句話說,旋柱承載溝槽21的底部的周緣具有類似凸輪的結構。在旋柱2旋轉的過程中,晶圓P輪流接觸旋柱承載溝槽21的底部的周緣,頂推角211可將晶圓P頂推再落下,使得晶圓P可沿Z軸方向往復移動,並增加藥液在晶圓底部(即與旋柱承載溝槽21接觸的位置)附近的流動。FIG. 3A is a schematic cross-sectional view along the line A-A of FIG. 2 . Further, as shown in FIG. 2 and FIG. 3A , in the present embodiment, the peripheral edge of the bottom of the spin column bearing groove 21 is not equidistant from the rotation center C of the spin column 2 to form at least one push angle 211 . In other words, the peripheral edge of the bottom of the spin column carrying groove 21 has a cam-like structure. During the rotation of the spin column 2, the wafer P alternately contacts the periphery of the bottom of the spin column bearing groove 21, and the push angle 211 can push the wafer P up and down again, so that the wafer P can move back and forth along the Z-axis direction. , and increase the flow of chemical liquid near the bottom of the wafer (ie, the position in contact with the spin column carrying groove 21 ).

進一步地,如圖3A所示,在本實施例中,旋柱承載溝槽21沿旋柱2的徑向方向上的剖面,具有複數圓弧段22及複數平直段23,這些圓弧段22及平直段23交錯設置而形成頂推角211。Further, as shown in FIG. 3A , in this embodiment, the cross section of the spin column bearing groove 21 along the radial direction of the spin column 2 has a plurality of arc segments 22 and a plurality of straight segments 23 . These arc segments 22 and the straight sections 23 are alternately arranged to form a push angle 211 .

進一步地,如圖3A所示,在本實施例中,旋柱承載溝槽21沿旋柱2的徑向方向上的剖面,具有四圓弧段22及四平直段23。圓弧段22及平直段23形成四重對稱,具有八個頂推角211。然而本發明不限於此,圓弧段22及平直段23的數量及排列可改為其他數量及形式。Further, as shown in FIG. 3A , in this embodiment, the cross section of the spin column bearing groove 21 along the radial direction of the spin column 2 has four arc segments 22 and four straight segments 23 . The arc segment 22 and the straight segment 23 form a quadruple symmetry, and have eight thrust angles 211 . However, the present invention is not limited thereto, and the number and arrangement of the circular arc segments 22 and the straight segments 23 can be changed to other numbers and forms.

進一步地,如圖3B所示,在本實施例中,旋柱承載溝槽21沿旋柱2的徑向方向上的剖面為八邊形,具有八個頂推角211。然而本發明不限於此,旋柱承載溝槽21沿旋柱2的徑向方向上的剖面可以為其他數量的多邊形。Further, as shown in FIG. 3B , in this embodiment, the cross section of the spin column bearing groove 21 along the radial direction of the spin column 2 is octagonal, and has eight thrust angles 211 . However, the present invention is not limited thereto, and the cross-section of the spin column bearing groove 21 along the radial direction of the spin column 2 may be any other number of polygons.

進一步地,如圖1所示,在本實施例中,蝕刻槽1具有二輸入口11,分別設置鄰近於二葉輪構件3。從液體出口412輸出的流體藥液分別從蝕刻槽1的兩端進入槽體內,使旋柱2的兩端的葉輪構件3皆受帶動而平衡受力。Further, as shown in FIG. 1 , in this embodiment, the etching tank 1 has two input ports 11 , which are respectively disposed adjacent to the two impeller members 3 . The fluid medicine output from the liquid outlet 412 enters the tank body from both ends of the etching tank 1 respectively, so that the impeller members 3 at both ends of the spin column 2 are driven to balance the force.

進一步地,在本實施例中,蝕刻槽1更具有一回流口12,連通於液體入口411。回流口12可將蝕刻用藥液回流至液體入口411而形成一循環迴圈。然而本發明不限於此,回流口12亦可直接將蝕刻用藥液排出,而液體入口411則補充新鮮的蝕刻用藥液。Further, in this embodiment, the etching tank 1 further has a return port 12 connected to the liquid inlet 411 . The return port 12 can return the etching chemical liquid to the liquid inlet 411 to form a circulation loop. However, the present invention is not limited to this, and the return port 12 can also directly discharge the etching chemical solution, while the liquid inlet 411 is filled with fresh etching chemical solution.

進一步地,在本實施例中,無晶舟晶片旋轉機構100更包含至少二支撐柱5,這些支撐柱5平行設置於旋柱2的兩側,並且在Z軸方向上略高於旋柱2,以支撐晶圓P的兩側邊。支撐柱5亦可具有多個平行排列的旋柱承載溝槽以置放晶圓P。Further, in this embodiment, the boatless wafer rotating mechanism 100 further includes at least two support columns 5 , and these support columns 5 are arranged parallel to both sides of the spin column 2 and are slightly higher than the spin column 2 in the Z-axis direction. , to support both sides of the wafer P. The support column 5 can also have a plurality of parallel-arranged spin column bearing grooves for placing the wafer P. As shown in FIG.

進一步地,在本實施例中,無晶舟晶片旋轉機構100更包含一承載架體6,該旋柱2、該等支撐柱5及該等葉輪構件3設置於該承載架體6,該承載架體6設置於該蝕刻槽1。藉此,該旋柱2、該等支撐柱5及該等葉輪構件3可藉由該承載架體6懸設於該蝕刻槽1中。Further, in this embodiment, the boatless wafer rotating mechanism 100 further includes a carrier body 6 , and the spin column 2 , the support columns 5 and the impeller members 3 are disposed on the carrier body 6 . The frame body 6 is arranged in the etching groove 1 . Thereby, the spin column 2 , the support columns 5 and the impeller members 3 can be suspended in the etching groove 1 by the carrier frame 6 .

本發明在上文中已以實施例揭露,然熟習本項技術者應理解的是,該實施例僅用於描繪本發明,而不應解讀為限制本發明之範圍。應注意的是,舉凡與該實施例等效之變化與置換,均應設為涵蓋於本發明之範疇內。因此,本發明之保護範圍當以申請專利範圍所界定者為準。The present invention has been disclosed by embodiments above, but those skilled in the art should understand that the embodiments are only used to describe the present invention, and should not be construed as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to this embodiment should be considered to be included within the scope of the present invention. Therefore, the protection scope of the present invention should be defined by the scope of the patent application.

100:無晶舟晶片旋轉機構 1:蝕刻槽 11:輸入口 12:回流口 2:旋柱 21:旋柱承載溝槽 211:頂推角 22:圓弧段 23:平直段 3:葉輪構件 4:泵 41:泵殼體 411:液體入口 412:液體出口 5:支撐柱 6:承載架體 C:旋轉中心 P:晶圓 100: Waferless wafer rotation mechanism 1: Etching groove 11: Input port 12: Return port 2: Spin column 21: Spin column bearing groove 211: Push angle 22: Arc segment 23: Straight section 3: Impeller components 4: Pump 41: Pump housing 411: Liquid inlet 412: Liquid outlet 5: Support column 6: Bearing frame C: center of rotation P: Wafer

圖1係為根據本發明實施例之無晶舟晶片旋轉機構之立體示意圖。 圖2係為根據本發明實施例之旋柱之立體示意圖。 圖3A係為圖2沿A-A線段之剖面示意圖。 圖3B係為圖3A之另一種態樣之示意圖。 FIG. 1 is a schematic perspective view of a boatless wafer rotating mechanism according to an embodiment of the present invention. FIG. 2 is a three-dimensional schematic diagram of a spin column according to an embodiment of the present invention. FIG. 3A is a schematic cross-sectional view along the line A-A of FIG. 2 . FIG. 3B is a schematic diagram of another aspect of FIG. 3A .

100:無晶舟晶片旋轉機構 100: Waferless wafer rotation mechanism

1:蝕刻槽 1: Etching groove

11:輸入口 11: Input port

12:回流口 12: Return port

2:旋柱 2: Spin column

3:葉輪構件 3: Impeller components

4:泵 4: Pump

41:泵殼體 41: Pump housing

411:液體入口 411: Liquid inlet

412:液體出口 412: Liquid outlet

5:支撐柱 5: Support column

6:承載架體 6: Bearing frame

P:晶圓 P: Wafer

Claims (9)

一種無晶舟晶片旋轉機構,其包含: 一蝕刻槽; 一旋柱,設置於該蝕刻槽中,該旋柱具有沿軸向方向平行排列的複數旋柱承載溝槽; 至少一葉輪構件,設置於該旋柱的一端;以及 一泵,具有一液體入口及一液體出口, 其中,該液體出口連通至該蝕刻槽的一輸入口,該輸入口鄰近於該葉輪構件,該葉輪構件及該旋柱經由該泵所帶動的藥液而被推動旋轉。 A boatless wafer rotating mechanism, comprising: an etching groove; a spin column disposed in the etching groove, the spin column has a plurality of spin column bearing grooves arranged in parallel along the axial direction; at least one impeller member disposed at one end of the spin column; and a pump having a liquid inlet and a liquid outlet, Wherein, the liquid outlet is connected to an input port of the etching tank, and the input port is adjacent to the impeller member, and the impeller member and the spin column are pushed and rotated by the liquid medicine driven by the pump. 如請求項1所述之無晶舟晶片旋轉機構,其中該旋柱承載溝槽的底部的周緣距離該旋柱的旋轉中心為非等距,而形成至少一頂推角。The boatless wafer rotating mechanism as claimed in claim 1, wherein the peripheral edge of the bottom of the spin column bearing groove is not equidistant from the rotation center of the spin column to form at least one push angle. 如請求項2所述之無晶舟晶片旋轉機構,其中該旋柱承載溝槽沿該旋柱的徑向方向上的剖面,具有複數圓弧段及複數平直段,該等圓弧段及該等平直段交錯設置而形成該頂推角。The boatless wafer rotating mechanism as claimed in claim 2, wherein the cross section of the spin column bearing groove along the radial direction of the spin column has a plurality of arc segments and a plurality of straight segments, the arc segments and The straight sections are staggered to form the push angle. 如請求項3所述之無晶舟晶片旋轉機構,其中該旋柱承載溝槽沿該旋柱的徑向方向上的剖面,具有四圓弧段及四平直段。The boatless wafer rotating mechanism according to claim 3, wherein the cross section of the spin column bearing groove along the radial direction of the spin column has four arc segments and four straight segments. 如請求項1所述之無晶舟晶片旋轉機構,其中該葉輪構件數量為二,分別設置於該旋柱的相對二端。The boatless wafer rotating mechanism as claimed in claim 1, wherein the number of the impeller members is two, which are respectively disposed at two opposite ends of the spin column. 如請求項5所述之無晶舟晶片旋轉機構,其中該蝕刻槽具有二該輸入口,分別設置鄰近於該等葉輪構件。The boatless wafer rotating mechanism of claim 5, wherein the etching tank has two input ports, which are respectively disposed adjacent to the impeller members. 如請求項1所述之無晶舟晶片旋轉機構,其中該蝕刻槽更具有一回流口,連通於該液體入口。The boatless wafer rotating mechanism according to claim 1, wherein the etching tank further has a return port, which is communicated with the liquid inlet. 如請求項1所述之無晶舟晶片旋轉機構,更包含至少二支撐柱,該等支撐柱平行設置於該旋柱的兩側,該等支撐柱分別具有沿軸向方向平行排列的複數旋柱承載溝槽。The boatless wafer rotating mechanism as claimed in claim 1, further comprising at least two support columns, the support columns are arranged on both sides of the spin column in parallel, and the support columns respectively have a plurality of spin columns arranged in parallel along the axial direction The column carries the groove. 如請求項1所述之無晶舟晶片旋轉機構,更包含一承載架體,該旋柱及該葉輪構件設置於該承載架體,該承載架體設置於該蝕刻槽。The boatless wafer rotating mechanism as claimed in claim 1 further comprises a carrier body, the spin column and the impeller member are arranged on the carrier body, and the carrier body is arranged in the etching groove.
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