TWI751651B - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

The subject of this invention is to provide the substrate processing method which can strengthen the effect|action of ozone on a board|substrate. A substrate (WF) having a first surface (S1) and a second surface (S2) opposite to the first surface (S1) is held. Pressurized ozone water (LQ) is arranged on the second surface (S2) of the substrate (WF). Ozone water is heated at the point of use for substrate (WF) processing.

Description

Substrate processing method and substrate processing apparatus

The present invention relates to a substrate processing method and a substrate processing apparatus, and particularly relates to a substrate processing method using ozone water, and a substrate processing apparatus used for the substrate processing method.

After the step of applying the photoresist film on the wafer (substrate) is performed, in most cases, the photoresist film is removed from the substrate. In particular, since the photoresist film used for the implantation mask used in the ion implantation step is not easily removed, a cleaning solution having a strong effect is generally used. As a cleaning solution having a strong effect, for example, sulfuric acid/hydrogen peroxide mixture (SPM) has been widely known from the past. However, in recent years, a substrate processing method that does not use SPM has been desired due to the large burden of waste liquid treatment.

Japanese Patent Laid-Open No. 2008-311591 discloses a method for treating a substrate, which removes residual organic substances remaining on the surface of the substrate by immersing the substrate in ozone water without using a chemical with a large environmental load such as sulfuric acid. The purpose of this method is to improve the efficiency of the removal process of the residual organic matter adhering to the substrate. Specifically, the ozone water preheated by the heating means is supplied to the sealed substrate processing tank, and is brought into a high-pressure state with a relatively high air pressure. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2008-311591

(The problem that the invention intends to solve)

According to the technique described in the above-mentioned publication, the position where the ozone water comes into contact with the substrate in the substrate processing tank is the point of use (POU: Point of Use) of the ozone water. According to this technology, the ozone water is pre-heated by the heating means before reaching the point of use. Therefore, ozone water is in a high temperature state not only at the point of use, but also from the heating means to the point of use. According to the examination of the inventors of the present application, in this case, the ozone concentration of the ozone water tends to decrease before the ozone water reaches the point of use. As a result, the treatment effect by ozone becomes weak.

The present invention has been accomplished in order to solve the above problems, and an object of the present invention is to provide a substrate processing method capable of enhancing the effect of ozone on the substrate. (Technical means to solve problems)

A first aspect is a substrate processing method comprising: a step of holding a substrate having a first surface and a second surface opposite to the first surface; a step of disposing pressurized ozone water on the second surface of the substrate; and The step of heating the ozone water at the point of use for the treatment of the substrate.

A second aspect is the substrate processing method of the first aspect, wherein the step of heating the ozone water includes: a step of heating the substrate; and a step of conducting heat from the substrate to the ozone water.

The third aspect is the substrate processing method of the second aspect, and the step of heating the substrate includes a step of heating the substrate from the second surface.

A fourth aspect is the substrate processing method of the second aspect, wherein the step of heating the substrate includes the step of heating the substrate from the first surface.

A fifth aspect is the substrate processing method of the first aspect, wherein the step of heating the ozone water includes a step of mixing warm water having a second temperature higher than the first temperature with the ozone water having a first temperature.

A sixth aspect is in the substrate processing methods of the first to fifth aspects, wherein the step of disposing the ozone water includes a step of controlling the pressure of the ozone water disposed on the second surface of the substrate.

A seventh aspect is the substrate processing method according to the first to sixth aspects, further comprising: at least a part of the second surface of the substrate, a pressure holding portion having an opposing surface opposed at a distance is arranged. The step of disposing the ozone water includes the step of supplying the ozone water between at least a part of the second surface of the substrate and the opposite surface of the pressure holding part.

An eighth aspect is the substrate processing method of the seventh aspect, wherein the pressure holding portion includes: a main body portion facing the second surface of the substrate at intervals; The wings extend toward the second surface of the base plate and are opposite to the second surface of the base plate.

HG。A ninth aspect is in the substrate processing method of the eighth aspect, wherein the wing portion faces the second surface of the substrate with the gap length HG apart, and has a cylindrical shape with an inner circumference LI, and the pressure holding portion includes a portion facing the substrate. The ozone water is supplied between the second surface and the main body, and the supply part has a cross-sectional area SC, and satisfies SC>LI

HG.

A tenth aspect is in the substrate processing methods of the seventh to ninth aspects, wherein the pressure holding portion has a plurality of introduction paths for receiving the ozone water, and the step of disposing the ozone water includes a plurality of introducing the ozone water toward the pressure holding portion Steps for importing an import route.

The eleventh aspect is in the substrate processing method of the tenth aspect, wherein the step of introducing the ozone water toward the plurality of introduction paths of the pressure holding portion includes making the ozone water larger in cross-sectional area from each of the introduction paths than the plurality of introduction paths. A step in which the piping of the cross-sectional area diverges toward a plurality of introduction paths.

A twelfth aspect is a method for treating a substrate, comprising: a step of holding a substrate having a first surface and a second surface opposite to the first surface; and disposing pressurized ozone water on the second surface of the substrate step. The step of disposing the ozone water includes a step of controlling the pressure of the ozone water disposed on the second surface of the substrate.

A thirteenth aspect is a substrate processing apparatus for processing a substrate having a first surface and a second surface opposite to the first surface, comprising: a substrate holding part for holding the substrate; and a pressure holding part, The pressurized ozone water is arranged on the second surface of the substrate; and a heating unit heats the ozone water at a point of use for processing the substrate.

A fourteenth aspect is a substrate processing apparatus for processing a substrate having a first surface and a second surface opposite to the first surface, comprising: a substrate holding part for holding the substrate; and a pressure holding part, It arranges pressurized ozone water on the second surface of the substrate; and a pressure control part controls the pressure of the pressurized ozone water. (Compared to the efficacy of the prior art)

According to the first aspect, by arranging the pressurized ozone water on the second surface of the substrate, the substrate can be easily removed as compared with the case where the unpressurized ozone water is arranged on the second surface of the substrate The ozone concentration in the ozone water on the second side is kept high. In addition, by heating the ozone water at the point of use, it is possible to avoid a situation where the ozone concentration in the ozone water decreases before reaching the point of use, compared to the case where the ozone water is heated before the point of use. According to the above, high-temperature and high-concentration ozone water can be supplied toward the point of use on the second surface of the substrate. Thereby, the chemical reaction of the ozone water at the point of use can be promoted. Therefore, the effect of ozone on the substrate can be enhanced.

According to the second aspect, the ozone water is heated by conducting the heat from the substrate to the ozone water. Thereby, the ozone water can be heated at the point of use.

According to the third aspect, the step of heating the substrate includes the step of heating the substrate from the second surface. This makes it possible to preferentially heat the second surface to be processed among the first surface and the second surface.

According to the fourth aspect, the step of heating the substrate includes the step of heating the substrate from the first surface. Thereby, the adverse effect of heating is less likely to affect the second surface.

According to the fifth aspect, ozone water can be heated by mixing it with warm water.

According to the sixth aspect, the step of disposing the ozone water includes the step of controlling the pressure of the ozone water disposed on the second surface of the substrate. Thereby, the process of the board|substrate by ozone water can be performed stably.

According to a 7th aspect, the process of supplying ozone water between at least a part of the 2nd surface of a board|substrate and the opposing surface of a pressure holding|maintenance part is included. Thereby, the ozone water can be easily pressurized between at least a part of the 2nd surface of a board|substrate and the opposing surface of a pressure holding|maintenance part.

According to the eighth aspect, the pressure holding portion has the wing portion arranged at the edge of the main body portion. Thereby, the pressure in the pressure holding portion can be easily increased.

HG。藉此，可更輕易地提高壓力保持部內的壓力。According to the ninth aspect, SC>LI can be satisfied

HG. Thereby, the pressure in the pressure holding part can be raised more easily.

According to the tenth aspect, the ozone water is introduced into the plurality of introduction paths of the pressure holding unit. Thereby, unevenness of the position where fresh ozone water is introduced can be suppressed. Therefore, uneven treatment due to deactivation of ozone water can be suppressed.

According to the eleventh aspect, the ozonated water is branched to the plurality of introduction paths from the piping having a larger cross-sectional area than the respective cross-sectional areas of the plurality of introduction paths of the pressure holding portion. Thereby, the pressure of the ozone water in the introduction path can be maintained easily. Therefore, the ozone concentration of the ozone water in the introduction path can be easily maintained.

According to the twelfth aspect, the pressure of the pressurized ozone water is controlled. Thereby, the substrate processing can be performed stably.

According to the thirteenth aspect, by arranging the pressurized ozone water on the second surface of the substrate, compared with the case of disposing the unpressurized ozone water on the second surface of the substrate, the The ozone concentration in the ozone water on the second surface of the substrate was maintained high. In addition, by heating the ozonated water at the point of use, it is possible to avoid a situation where the ozone concentration in the ozonated water decreases before reaching the point of use, compared to the case of heating the ozonated water before the point of use. According to the above, high-temperature and high-concentration ozone water can be supplied toward the point of use on the second surface of the substrate. Thereby, the chemical reaction of the ozone water at the point of use can be promoted. Therefore, the effect of ozone on the substrate can be enhanced.

According to the 14th aspect, the pressure of the pressurized ozone water is controlled. Thereby, the substrate processing can be performed stably.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. Furthermore, in the following drawings, the same or corresponding parts are marked with the same reference numerals, and the description thereof will not be repeated.

(Embodiment 1) FIG. 1 is a plan view schematically showing an example of the configuration of the substrate processing system 100 in the first embodiment. The substrate processing system 100 includes a load port LP, an indexing robot IR, a central robot CR, a control unit 90 , and at least one processing unit DP (four processing units in FIG. 1 ). A plurality of processing units DP are used for processing wafers WF (substrates), and at least one of them corresponds to the substrate processing apparatus 101 . The substrate processing apparatus 101 is a monolithic apparatus that can be used for processing to remove organic substances attached to the wafer WF. The organic material is typically used in the photoresist film. The photoresist film can be used, for example, as an implant mask for an ion implantation step.

The control unit 90 can control the operation of each unit included in the substrate processing system 100 . Carriers C are containers for accommodating wafers WF, respectively. The load port LP is a container holding mechanism for holding a plurality of carriers C. As shown in FIG. The indexing robot IR can transfer the wafer WF between the load port LP and the substrate placement portion PS. The central robot CR can transfer the wafer WF from one of the substrate placement portion PS and the at least one processing unit DP to the other. With the above configuration, the index robot IR, the substrate placement unit PS, and the central robot CR function as transfer mechanisms for transferring the wafer WF between each of the processing units DP and the load port LP.

The unprocessed wafer WF is taken out from the carrier C by the indexing robot IR, and is handed over to the central robot CR via the substrate placement unit PS. The central robot CR carries the unprocessed wafer WF into the processing unit DP. The processing unit DP processes the wafer WF. The processed wafer WF is taken out from the processing unit DP by the central robot CR, and is handed over to the indexing robot IR via the substrate placement unit PS after passing through another processing unit DP as necessary. The indexing robot IR carries the processed wafer WF into the carrier C. With the above, the processing of the wafer WF is performed.

FIG. 2 is a block diagram schematically showing the configuration of the control unit 90 ( FIG. 1 ). The control unit 90 may also be constituted by a general computer having an electric circuit. Specifically, the control unit 90 includes a CPU (Central Processing Unit) 91 , a ROM (Read Only Memory) 92 , a RAM (Random Access Memory) 93 , and a storage device 94 . , an input unit 96 , a display unit 97 , a communication unit 98 , and a bus bar 95 connecting these to each other.

The ROM 92 stores basic programs. The RAM 93 functions as a work area when the CPU 91 performs predetermined processing. The storage device 94 is composed of a non-volatile storage device such as a flash memory or a hard disk device. The input unit 96 is constituted by various switches, a touch panel, and the like, and receives input setting instructions for processing recipes and the like from an operator. The display unit 97 is composed of, for example, a liquid crystal display device, lamps, and the like, and displays various information under the control of the CPU 91 . The communication unit 98 has a data communication function via a LAN (Local Area Network) or the like. In the storage device 94, a plurality of modes related to the control of each device constituting the substrate processing system (FIG. 1) are preset. By executing the processing program 94P, the CPU 91 selects one mode from the above-mentioned plural modes, and controls each device by the mode. In addition, the processing program 94P may also be stored in a recording medium. When this recording medium is used, the processing program 94P can be installed in the control unit 90 . In addition, a part or all of the functions to be executed by the control unit 90 are not necessarily realized by software, and may be realized by hardware such as a dedicated logic circuit.

3 and 4 are a side view and a partial cross-sectional view, respectively, schematically showing the configuration of the substrate processing apparatus in the first embodiment. The substrate processing apparatus 101 is used for processing the wafer WF. The wafer WF has a back surface S1 (first surface) and a processing surface S2 (a second surface opposite to the first surface), and at least the processing surface S2 is processed by the substrate processing apparatus 101 . The substrate processing apparatus 101 includes a substrate holding mechanism M1, a pressure applying mechanism M2, and a heating mechanism M3 (heating unit).

The substrate holding mechanism M1 has a function of holding the wafer WF. In addition, the substrate holding mechanism M1 may have a function of rotating the wafer WF. The pressure applying mechanism M2 has a pressure maintaining function of disposing the ozone water LQ pressurized more than the atmospheric pressure on the processing surface S2 of the wafer WF. In addition, the pressure applying mechanism M2 may have a pressure control function for controlling the pressure of the pressurized ozone water LQ. The heating mechanism M3 has a heating function of heating the ozone water LQ at the point of use for processing the wafer WF. In this embodiment, the heating mechanism M3 has a heating function of heating the wafer WF, and the ozone water LQ is heated mainly by heat conduction from the heated wafer WF.

The substrate holding mechanism M1 ( FIG. 3 ) includes a vacuum chuck 11 (substrate holding portion) having an exhaust duct 12 , a vacuum pump 13 , a rotating shaft 14 , and a rotating motor 15 . The back surface S1 of the wafer WF is evacuated from the exhaust channel 12 by the vacuum pump 13 and is adsorbed on the vacuum chuck 11 . Thereby, the vacuum chuck 11 holds the wafer WF. The rotating shaft 14 supports the vacuum chuck 11 . The vacuum chuck 11 is rotated by rotating the motor 15 to rotate the rotating shaft 14 as indicated by the arrow RC. Thereby, the wafer WF held by the vacuum chuck 11 is rotated.

The pressure applying mechanism M2 ( FIG. 3 ) includes a pressure nozzle 31 (pressure holding unit), an ozone water source 41 , a pressure regulator 42 (pressure control unit), a pressure gauge 50 , a robot arm 61 , a shaft 62 , an angle adjuster 63 , and Height adjuster 64. The ozone water source 41 generates ozone water by dissolving ozone gas in pure water. The generated ozone water is supplied to the pressure nozzle 31 via the pressure regulator 42 . The pressure regulator 42 is a pressure increasing device such as a pump, or a pressure reducing device such as a pressure reducing valve.

The pressure nozzle 31 may arrange the pressurized ozone water LQ on the processing surface S2 of the wafer WF. The pressure of the pressurized ozone water LQ can be controlled by the pressure regulator 42 . The pressure control is obtained by adjusting the pressure of the ozone water discharged toward the pressure nozzle 31 by the pressure regulator 42 . The adjustment can be performed with reference to the pressure in the pressure nozzle 31 detected by the pressure gauge 50 . The ozone water source supplies ozone water toward the pressure nozzle 31 via the pressure regulator 42 .

The pressure nozzle 31 is supported by one end of the robot arm 61 . The other end of the robot arm 61 is supported by the shaft 62 . The shaft 62 extends in the height direction. The shaft 62 is rotatable, and its rotation angle is adjusted by the angle adjuster 63 as an actuator as shown by the arrow RN (FIG. 3). Thereby, the direction in which the robot arm 61 extends from the shaft 62 is adjusted. Thereby, as shown by arrow SN (FIG. 3), the position of the pressure nozzle 31 is scanned on the processing surface S2 of the wafer WF. In addition, the shaft 62 can be displaced in the height direction, and the height position is adjusted by the height adjuster 64 as an actuator. Thereby, the height of the robot arm 61 is adjusted as indicated by the arrow HN (FIG. 3). Thereby, the gap length HG between the pressure nozzle 31 and the processing surface S2 of the wafer WF is adjusted. Since the pressure of the ozone water LQ in the pressure nozzle 31 can be adjusted thereby, the height adjuster 64 is a kind of pressure control unit.

The pressure nozzle 31 has a wing portion 31A, a main body portion 31B, and a supply portion 31C. The main body portion 31B faces the processing surface S2 of the wafer WF at intervals. The wing portion 31A is disposed on the edge of the main body portion 31B, extends from the main body portion 31B toward the processing surface S2 of the wafer WF, and faces the processing surface S2 of the wafer WF. In the present embodiment, the wing portion 31A has a cylindrical shape. The supply part 31C supplies the ozone water LQ between the processing surface S2 of the wafer WF and the main body part 31B.

The heating mechanism M3 can heat the ozone water LQ at the point of use for processing the wafer WF. In this embodiment, the heating mechanism M3 heats the wafer WF. Then, the ozone water LQ is heated by conducting heat from the heated wafer WF toward the ozone water LQ. The heating of the wafer WF may be performed toward at least one of the processing surface S2 and the back surface S1. Moreover, the heating method can be performed using light irradiation or heat conduction, for example. In the case of light irradiation, the temperature of the wafer WF rises due to the absorption of the energy of the light LT (FIG. 4). In the case of thermal conduction, the temperature of the wafer WF will rise due to the thermal conduction towards the wafer WF. In the present embodiment, the heating mechanism M3 includes at least one of the lamp heater 81 and the conduction heater 82 .

Lamp heater 81 irradiates light LT toward processing surface S2 of wafer WF ( FIG. 4 ). The lamp heater 81 preferably has a light emitting diode (LED: Light Emitting Diode) that emits light LT. The wavelength of the light LT is preferably one that is easily absorbed by the wafer WF. From this point of view, when the wafer WF is a silicon wafer, the light LT preferably has peak intensities at wavelengths around 450 nm and around 550 nm. The lamp heater 81 may be mounted on the main body portion 31B outside the pressure nozzle 31 . Thereby, the lamp heater 81 can be scanned in synchronization with the scanning of the pressure nozzle 31 (FIG. 3: arrow SN). In this case, since the light LT reaches the wafer WF via the main body portion 31B, the main body portion 31B must be made of a material through which the light LT can penetrate, for example, a transparent material such as quartz glass.

Next, the wafer (substrate) processing method of the first embodiment will be described below.

In step S10 ( FIG. 5 ), the indexing robot IR and the central robot CR ( FIG. 1 ) transfer the wafer WF from the load port LP toward the substrate processing apparatus 101 .

In step S30 ( FIG. 5 ), the substrate holding mechanism M1 ( FIG. 3 ) holds the wafer WF. Specifically, the vacuum chuck 11 sucks the back surface S1 of the wafer WF by evacuation by the vacuum pump 13 . Next, the wafer WF is rotated by the rotation of the rotation shaft 14 by the rotation motor 15 (arrow RC).

In step S40 ( FIG. 5 ), the pressure applying mechanism M2 ( FIG. 3 ) arranges the pressurized ozone water LQ on the processing surface S2 of the wafer WF. Specifically, first the pressure nozzle 31 is arranged (FIG. 4). The pressure nozzle 31 thus arranged has an opposing surface (lower surface) facing a part of the processing surface S2 of the wafer WF at intervals. The ozone water LQ is supplied between the opposing surface and a portion of the processing surface S2 of the wafer WF. At this time, the wafer WF is rotated (FIG. 3: refer to arrow RC), and the pressure nozzle 31 is scanned (FIG. 3: refer to arrow SN). Thereby, the pressurized ozone water can be made to act on the whole process surface S2. Moreover, by performing a scan, the position where the fresh ozone water LQ which has not been deactivated excessively is arrange|positioned can be uniformized.

HG。再者，供給部31C較佳係具有圓筒形狀，於該情形時，截面積SC使用圓筒形狀的內側直徑D1(圖4)，而由SC=π

(D1/2)² 所計算出。又，翼部31A較佳係圓筒形狀，於該情形時，內周長LI使用圓筒形狀的內側直徑D2，而由LI=π

D2所計算出。When the ozone water LQ is supplied, the wing portion 31A ( FIG. 4 ) of the pressure nozzle 31 faces the processing surface S2 of the wafer WF with a gap length HG greater than zero. When the cylindrical shape of the wing portion 31A has an inner circumference LI, and the supply portion 31C has a cross-sectional area SC inside the supply portion 31C, it is preferable to satisfy SC>LI

HG. Furthermore, the supply portion 31C preferably has a cylindrical shape, and in this case, the cross-sectional area SC uses the inner diameter D1 ( FIG. 4 ) of the cylindrical shape, and SC=π

(D1/2) ² is calculated. In addition, the wing portion 31A is preferably in a cylindrical shape, and in this case, the inner circumference LI uses the inner diameter D2 of the cylindrical shape, and LI=π

Calculated by D2.

As described above, in the pressure nozzle 31, when the ozone water LQ is disposed on the processing surface S2 of the wafer WF, it is preferable that the ozone water LQ is not only pressurized, but also the pressure of the ozone water LQ is controlled. This control is obtained by adjusting the pressure of the ozone water discharged toward the pressure nozzle 31 by the pressure regulator 42 . Instead or in addition, the gap length HG may be adjusted. The control of the pressure is preferably performed with reference to the pressure gauge 50 .

Since the gap length HG ( FIG. 4 ) is larger than zero, the supplied ozone water LQ leaks toward the outside of the pressure nozzle 31 on the processing surface S2 of the wafer WF as indicated by the arrow EV ( FIG. 4 ). Therefore, in the present embodiment, the ozone water LQ in the pressure nozzle 31 is continuously replaced with the fresh ozone water supplied from the ozone water source 41 . In addition, the leaked ozone water LQ flows out from the processing surface S2 as shown by the arrow FL (FIG. 3).

In step S50 ( FIG. 5 ), the heating mechanism M3 ( FIG. 4 ) heats the ozone water LQ at the point of use for processing the wafer WF. The inside of the point-based pressure nozzle 31, more specifically, the portion in contact with the processing surface S2 in the ozone water LQ inside the system-based pressure nozzle 31 is used. In this embodiment, the heating mechanism M3 first heats the wafer WF. The wafer WF may be heated from the processing surface S2 or may be heated from the back surface S1 instead of or in addition. The heat from the heated wafer WF is conducted to the ozone water LQ due to the temperature difference. As a result, the ozone water LQ is heated at the point of use. The ozone water LQ is preferably not heated between the ozone water source 41 and the pressure nozzle 31 . The ozonated water heated at the point of use as described above acts on the processing surface S2, whereby the processing of the wafer WF is performed. Specifically, the wafer WF is cleaned, for example, photoresist is removed.

In step S60 (FIG. 5), after the above-described processing, a rinsing step of wafer WF is performed. When the substrate processing apparatus 101 also has a cleaning function, the rinsing step can be performed by the substrate processing apparatus 101 or by other processing units DP ( FIG. 1 ).

In step S80 ( FIG. 5 ), the index robot IR and the central robot CR ( FIG. 1 ) transfer the rinsed wafer WF from the processing unit DP toward the load port LP.

Thereby, the processing of the wafer WF is completed. Furthermore, other substances other than ozone may be dissolved in the ozone water LQ, for example, at least one of ammonia and hydrogen peroxide may be dissolved in the ozone water LQ. In addition, air bubbles may be mixed into the ozone water LQ, for example, ozone air bubbles may be mixed.

According to the present embodiment, by arranging the pressurized ozone water LQ on the processing surface S2 of the wafer WF, it is possible to dispose the unpressurized ozone water LQ on the processing surface S2 of the wafer WF. The ozone concentration in the ozone water LQ on the processing surface S2 of the wafer WF is easily maintained high. Generally, high-concentration ozone water of about 200 to 300 ppm can be prepared under a sufficiently high pressure. However, if it is opened to an environment under atmospheric pressure, the ozone concentration will drop rapidly to about 60 ppm. Furthermore, according to the present embodiment, by heating the ozone water LQ at the point of use, it is possible to prevent the ozone concentration in the ozone water LQ from reaching the point of use, compared to the case of heating the ozone water LQ before the point of use situation of decline. Thereby, the high-temperature and high-concentration ozone water LQ can be supplied toward the point of use on the processing surface S2 of the wafer WF. Thereby, the chemical reaction of the ozone water LQ at the point of use can be promoted. Therefore, the effect of ozone on the processing surface S2 of the wafer WF can be enhanced.

The ozone water LQ is heated by conducting the heat from the wafer WF to the ozone water LQ. Thereby, the ozone water LQ can be heated at the point of use.

Wafer WF can also be heated from processing surface S2. In this case, the processing surface S2 which is the surface to be processed among the back surface S1 and the processing surface S2 can be heated preferentially. Alternatively, the wafer WF may also be heated from the back surface S1. In this case, the adverse effect of heating does not spread to the processing surface S2.

The pressure of the ozone water LQ arranged on the processing surface S2 of the wafer WF is preferably controlled. Thereby, the processing of the wafer WF by the ozone water LQ can be performed stably.

The ozone water LQ is supplied between a portion of the processing surface S2 of the wafer WF and the opposing surface of the pressure nozzle 31 . As a result, between a portion of the processing surface S2 of the wafer WF and the facing surface of the pressure nozzle 31, the pressure can be easily applied toward the ozone water LQ.

HG之情形時，可更輕易地提高壓力噴嘴31內的壓力。The pressure nozzle 31 has a wing portion 31A arranged at the edge of the main body portion 31B. Thereby, the pressure in the pressure nozzle 31 can be easily increased. In particular, when the formula SC>LI is satisfied as described above

In the case of HG, the pressure in the pressure nozzle 31 can be increased more easily.

By using the vacuum chuck 11 as the substrate holding portion, the back surface S1 of the wafer WF can be supported substantially uniformly. Thereby, the warpage of the wafer WF due to the pressure of the ozone water LQ can be prevented. In addition, the substrate holding part is not limited to a vacuum chuck, and may be a mechanical chuck.

(Embodiment 2) FIG. 6 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 102 according to the second embodiment. Hereinafter, differences from the substrate processing apparatus 101 ( FIGS. 3 and 4 : Embodiment 1) will be mainly described.

The substrate holding mechanism M1 may be the same as that of the first embodiment. However, in this embodiment, the wafer WF does not necessarily need to be rotated. Therefore, the rotating shaft 14 and the rotating motor 15 can also be omitted.

The pressure applying mechanism M2 may include a pressure cup 32 having a wing portion 32A, a main body portion 32B and a supply portion 32C instead of the pressure nozzle 31 having the wing portion 31A, the main body portion 31B and the supply portion 31C ( FIG. 4 : Embodiment 1) (pressure holding section). The main body portion 32B has an opposing surface (the lower surface in the drawing) facing the entire processing surface S2 of the wafer WF at intervals. Thereby, the pressurized ozone water LQ can be supplied between the opposing surface of the pressure cup 32 and the entire processing surface S2 of the wafer WF.

In the present embodiment, the sealing material 51 is provided so as to be sandwiched between the wing portion 32A of the pressure cup 32 and the vacuum chuck 11 . The sealing material 51 can be fixed to one of the vacuum chuck 11 and the wings 32A of the pressure cup 32. When the vacuum chuck 11 and the wings 32A of the pressure cup 32 are close to each other, the vacuum chuck 11 and the wings 32A of the pressure cup 32 are closed. The parts 32A are sealed. The sealing ability of the sealing material 51 depends on the load LD with which the wings 32A of the pressure cup 32 are pushed against the vacuum chuck 11 . The load can be adjusted by the load adjuster 49 . Since the pressure of the pressurized ozone water LQ can be controlled by adjusting the sealing ability, the load regulator 49 is a kind of pressure control part. When pressure is applied to the pressure cup 32 beyond the sealing capacity, the ozone water LQ of the sealing material 51 leaks (arrow EV1 ). In addition, the check valve 52 (pressure control part) for performing pressure discharge may be attached to the pressure cup 32 as needed. If the pressure exceeds the set pressure of the check valve 52 and the pressure is applied to the pressure cup 32, leakage of the ozone water LQ from the check valve 52 occurs (arrow EV2). Thereby, the pressure of the ozone water LQ under pressurization can be controlled.

Furthermore, in the illustrated configuration, the vacuum chuck 11 and the wing portion 32A of the pressure cup 32 are sealed with the sealing material 51 at the places facing each other in the vertical direction, but as a modification, the vacuum chuck It is also possible to seal with a sealing material at a place facing the wing portion in the horizontal direction.

When the substrate holding mechanism M1 includes the rotating shaft 14 and the rotating motor 15 , a mechanism is provided that can rotate the pressure cup 32 as indicated by the arrow RS in synchronization with the rotation of the vacuum chuck 11 . For example, a rotary motor 48 that rotates the pressure cup 32 is provided.

The pressure applying mechanism M2 may also have an ozone gas source 43 and a pressure regulator 44 . The ozone gas source 43 generates ozone gas. The generated ozone gas is supplied to the pressure cup 32 via the pressure regulator 44 . The pressure regulator 44 is a pressure increasing device such as a pump, or a pressure reducing device such as a pressure reducing valve. When the pressure applying mechanism M2 has such a configuration, after the ozone water LQ is stored in the pressure cup 32 , the pressure in the pressure cup 32 can be increased by introducing the pressurized ozone gas into the pressure cup 32 . In this case, the pressure regulator 42 connected to the ozone water source 41 can also be omitted.

According to this embodiment, almost the same effect as that of the first embodiment can be obtained. In addition, by using the vacuum chuck 11 as the substrate holding portion, the volume of the ozone water LQ required to satisfy the space between the substrate holding portion and the pressure cup 32 can be suppressed. Furthermore, if the increase in the volume can be tolerated, the substrate holding portion may also be a mechanical chuck.

Also, according to the present embodiment, unlike the first embodiment, a mechanism for scanning (FIG. 3: arrow SN) is not required. Also, unlike the first embodiment, the mechanism for rotating the wafer WF may be omitted. However, if the complication of the apparatus can be tolerated, it is preferable that the wafer WF is rotated in this embodiment. By this rotation, the air bubbles adhering to the processing surface S2 of the wafer WF are thrown off. Therefore, it is possible to prevent the occurrence of uneven processing due to localized adhesion of air bubbles.

(Embodiment 3) FIG. 7 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 103 in the third embodiment. Hereinafter, differences from the substrate processing apparatus 101 ( FIGS. 3 and 4 : Embodiment 1) will be mainly described.

In the present embodiment, the pressure applying mechanism M2 has the pressure nozzle 33 instead of the pressure nozzle 31 ( FIGS. 3 and 4 : Embodiment 1). Like the pressure nozzle 31 , the pressure nozzle 33 scans the processing surface S2 of the wafer WF while maintaining the gap length HG (see FIG. 3 : arrow SN). The gap length HG is, for example, about 0.5 mm. The mechanism for performing scanning and controlling the gap length HG may be the same as that of the first embodiment. The pressure nozzle 33 must be made of a material resistant to ozone, for example, quartz or Teflon (registered trademark).

The pressure nozzle 33 has an ozone water path 33o and a warm water path 33h. The entrance of the ozone water path 33o and the entrance of the warm water path 33h are independent of each other. The warm water path 33h penetrates the pressure nozzle 33 and reaches the opposing surface (the lower surface of the pressure nozzle 33 in the figure) facing the processing surface S2. The opposing surface may be flat. Moreover, the outer edge of this opposing surface may be circular, and its diameter is about 60 mm, for example. The ozone water path 33o merges with the warm water path 33h in the pressure nozzle 33 .

Preferably, the cross-sectional area of the ozone water path 33o is smaller in the portion connected to the warm water path 33h than in the portion away from the warm water path 33h. In other words, the cross-sectional area C7 of the portion connected to the warm water path 33h is smaller than the cross-sectional area C6 of the portion away from the warm water path 33h. With this configuration, the pressure of the ozone water can be maintained high until it is about to be mixed with warm water. Therefore, the ozone concentration of the ozone water from the ozone water source 41 can be easily maintained high until it is about to be mixed with warm water. In addition, the "cross-sectional area" here means the vertical surface area in the extending direction of the path.

Moreover, in this embodiment, the heating mechanism M3 has the warm water source 83 connected to the inlet of the warm water path 33h of the pressure nozzle 33. The warm water source 83 generates warm water having a higher temperature (second temperature) than the ozone water temperature (first temperature) from the ozone water source 41 . The second temperature is 40°C or higher, and preferably 70°C or higher.

With the above configuration, in the pressure nozzle 33, the warm water having the second temperature higher than the first temperature is mixed with the ozone water having the first temperature. Thereby, heated ozone water LQ can be obtained. For example, ozone water having a temperature of 75° C. and a concentration of 40 ppm may be disposed toward the treatment surface S2 .

(Embodiment 4) FIG. 8 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 104 in the fourth embodiment. Hereinafter, differences from the substrate processing apparatus 103 ( FIG. 7 : Embodiment 3) will be mainly described.

In this embodiment, the pressure applying mechanism M2 has the pressure nozzle 34 instead of the pressure nozzle 33 ( FIG. 7 : Embodiment 3).

The pressure nozzle 34 has the same warm water path 34h as the warm water path 33h ( FIG. 7 : Embodiment 3) in order to pass the warm water. Moreover, the pressure nozzle 34 has a plurality of introduction paths 34o for receiving the ozone water from the ozone water source 41. The introduction path 34o may include at least one introduction path 34o1 that reaches the opposite surface (the lower surface of the pressure nozzle 34 in the figure) facing the processing surface S2, and preferably includes a plurality of introduction paths 34o1 as shown in the figure. Moreover, the introduction path 34o may include the introduction path 34o2 which merges with the warm water path 34h in the pressure nozzle 34. In this embodiment, in order to arrange the ozone water LQ on the processing surface S2 of the wafer WF, the ozone water is introduced toward the plurality of introduction paths 34o. By this structure, the unevenness of the position where fresh ozone water is introduced can be suppressed. Therefore, uneven treatment due to deactivation of ozone water can be suppressed.

When the ozone water is introduced toward the plurality of introduction paths 34o of the pressure nozzle 34, the ozone water LQ is branched from the piping 45 toward the plurality of introduction paths 34o. Here, the cross-sectional area C8 of the piping 45 is preferably larger than the cross-sectional area C9 of each of the plurality of introduction passages 34o. With this configuration, the pressure of the ozone water can be easily maintained higher until it is about to be mixed with warm water. Therefore, the ozone concentration of the ozone water from the ozone water source 41 can be easily maintained high until it is about to be mixed with warm water. In addition, the "cross-sectional area" here means the area on the surface perpendicular|vertical to the extension direction of the piping 45 or the introduction path 34o.

A valve 47 is preferably inserted between the piping 45 and each of the plurality of introduction passages 34o. By controlling the opening and closing of the respective valves 47, the processing unevenness on the processing surface S2 of the wafer WF can be reduced.

For example, the pressure nozzle 34 has an opposing surface (the lower surface in the figure) having a circular outer edge, and the outlet of the warm water path 34h is arranged in the center thereof, and is arranged along the radial direction (the horizontal direction in the figure). The exits of the plurality of introduction paths 34o1. With this configuration, uneven processing in the radial direction can be suppressed. In addition, when the valve 47 is controlled as described above, it is also possible to further suppress uneven treatment in the radial direction. Furthermore, as a modified example, the introduction path 34o1 may be omitted and only the introduction path 34o2 may be provided, whereby the configuration can be simplified. However, in this modification, since only the center of the opposite surface of the pressure nozzle 34 (the lower surface in the figure) is supplied with fresh ozone water, the farther away from the center, the more deactivated the water will be supplied. ozonated water. Therefore, uneven handling is likely to occur.

In addition, since the characteristics of the pressure nozzle 34 other than those mentioned above are substantially the same as those of the pressure nozzle 33 ( FIG. 7 : Embodiment 3) described above, the description thereof will be omitted.

Although the present invention has been described in detail, the above-mentioned description is merely an example in all aspects, and the present invention is not limited thereto. Countless variations, not exemplified, may be construed as contemplated without departing from the scope of the present invention. The respective configurations described in the respective embodiments and the respective modified examples described above may be appropriately combined or omitted as long as they do not contradict each other.

11: Vacuum chuck (substrate holding part) 12: Exhaust duct 13: Vacuum pump 14: Rotary axis 15,48: Rotary Motor 31, 33, 34: Pressure nozzle (pressure holding part) 31A, 32A: Wings 31B, 32B: main body 31C, 32C: Supply Department 32: Pressure cup (pressure holding part) 33h: warm water path 33o: Ozone water path 34h: warm water path 34o, 34o1, 34o2: lead-in 41: Ozone water source 42, 44: Pressure regulator 43: Ozone gas source 45: Piping 47: Valve 49: Weight Adjuster 50: Manometer 51: Sealing material 52: Check valve 61: Robot Arm 62: Shaft 63: Angle adjuster 64: Height Adjuster 81: Lamp heater 82: Conduction heater 83: Warm water source 90: Control Department 91:CPU 92:ROM 93: RAM 94: Storage Device 94P: Handler 95: bus wire 96: Input section 97: Display part 98: Ministry of Communications 100: Substrate Handling Systems 101~104: Substrate processing equipment C: carrier CR: Central Robot DP: processing unit FL,HN,RC,RN,SN: Arrow IR: Indexing Robot LD: weight bearing LP: Load port LQ: Ozone water LT: Light M1: Substrate holding mechanism M2: Pressure applying mechanism M3: Heating mechanism PS: Substrate mounting part S1: Back (Side 1) S2: Processing side (2nd side) WF: Wafer (substrate)

FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing system in Embodiment 1 of the present invention. FIG. 2 is a block diagram schematically showing the configuration of a control unit included in the substrate processing system of FIG. 1 . 3 is a side view schematically showing the configuration of the substrate processing apparatus in Embodiment 1 of the present invention. 4 is a partial cross-sectional view schematically showing the configuration of the substrate processing apparatus in Embodiment 1 of the present invention. FIG. 5 is a flow chart schematically showing a substrate processing method in Embodiment 1 of the present invention. 6 is a cross-sectional view schematically showing the structure of a substrate processing apparatus in Embodiment 2 of the present invention. 7 is a partial cross-sectional view schematically showing the configuration of a substrate processing apparatus in Embodiment 3 of the present invention. 8 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus in Embodiment 4 of the present invention.

11: Vacuum chuck (substrate holding part)

12: Exhaust duct

13: Vacuum pump

14: Rotary axis

15: Rotary motor

31: Pressure nozzle (pressure holding part)

41: Ozone water source

42: Pressure regulator

50: Manometer

61: Robot Arm

62: Shaft

63: Angle adjuster

64: Height Adjuster

81: Lamp heater

82: Conduction heater

101: Substrate processing device

FL,HN,RC,RN,SN: Arrow

LQ: Ozone water

M1: Substrate holding mechanism

M2: Pressure applying mechanism

M3: Heating mechanism

S1: Back (Side 1)

S2: Processing side (2nd side)

WF: Wafer (substrate)

Claims (17)

A substrate processing method comprising: a step of holding a substrate having a first surface and a second surface opposite to the first surface; the step of disposing pressurized ozone water on the second surface of the substrate; and The step of heating the ozone water at the point of use for processing the substrate; the step of heating the ozone water includes: heating the substrate; and conducting heat from the substrate to the ozone water; and the step of heating the substrate includes a step of heating the substrate from the second surface. The substrate processing method according to claim 1, wherein the step of heating the substrate includes a step of heating the substrate from the first surface. A substrate processing method comprising: a step of holding a substrate having a first surface and a second surface opposite to the first surface; the step of disposing pressurized ozone water on the second surface of the substrate; and The step of heating the ozone water at the point of use for processing the substrate; and the step of heating the ozone water includes mixing the ozone water having a first temperature with a first temperature higher than the first temperature. 2 steps for the temperature of warm water. The substrate processing method according to any one of claims 1 to 3, wherein the step of disposing the ozone water includes a step of controlling the pressure of the ozone water disposed on the second surface of the substrate. A substrate processing method comprising: a step of holding a substrate having a first surface and a second surface opposite to the first surface; the step of disposing pressurized ozone water on the second surface of the substrate; The step of heating the ozone water at the point of use for the treatment of the substrate; and the step of disposing a pressure holding portion having an opposing surface facing at least a part of the second surface of the substrate at intervals; The step of disposing the ozonated water includes the step of supplying the ozonated water between at least a part of the second surface of the substrate and the facing surface of the pressure holding part; and the pressure holding part includes: a main body, and facing the second surface of the substrate at intervals; and a wing portion, which is arranged on the edge of the main body portion, extends from the main body portion toward the second surface of the substrate, and faces the substrate the above-mentioned second side. The substrate processing method according to claim 5, wherein the wings face the second surface of the substrate with a gap length HG between them, and have a cylindrical shape with an inner circumference LI, and the pressure holding portion includes a cylindrical shape facing the substrate. The ozone water is supplied between the second surface and the main body, and the supply portion having the cross-sectional area SC satisfies SC>LI×HG. A substrate processing method comprising: a step of holding a substrate having a first surface and a second surface opposite to the first surface; the step of disposing pressurized ozone water on the second surface of the substrate; The step of heating the ozone water at the point of use for processing the substrate; and the step of arranging a pressure holding portion having an opposing surface facing at least a part of the second surface of the substrate at intervals and the step of disposing the ozonated water includes the step of supplying the ozonated water between at least a part of the above-mentioned second surface of the above-mentioned substrate and the above-mentioned facing surface of the above-mentioned pressure holding part, and the above-mentioned pressure holding part has a function for receiving the above-mentioned odor A plurality of introduction paths of the gas-water, and the step of disposing the ozone water includes the step of introducing the ozone water toward the plurality of introduction paths of the pressure holding portion. The substrate processing method according to claim 7, wherein the step of introducing the ozonated water toward the plurality of introduction passages of the pressure holding portion includes making the ozone water from each of the sectional areas larger than those of the plurality of introduction passages The process of branching toward the above-mentioned plurality of introduction passages by pipes having a larger cross-sectional area. A substrate processing apparatus for processing a substrate having a first surface and a second surface opposite to the first surface, comprising: a substrate holding part for holding the substrate; and a pressure holding part on the above-mentioned The second surface of the substrate is provided with pressurized ozone water; and a heating part heats the ozone water at a point of use for processing the substrate; The said board|substrate is heated, and the heat from the said board|substrate is conducted to the said ozone water. A substrate processing apparatus is used for treating a substrate having a first surface and the above-mentioned first surface On the other hand, the second surface of the substrate is processed; it includes: a substrate holding unit for holding the substrate; a pressure holding unit for disposing pressurized ozone water on the second surface of the substrate; and a pressure control unit , which controls the pressure of the pressurized ozonated water; and the pressure holding portion has an opposing surface facing at least a part of the second surface of the substrate at an interval, and the ozonated water is supplied to the between at least a part of the second surface of the substrate and the facing surface of the pressure holding part, and the pressure holding part includes: a main body part facing the second surface of the substrate at intervals; and The wing portion is disposed on the edge of the main body portion, extends from the main body portion toward the second surface of the base plate, and faces the second surface of the base plate. A substrate processing apparatus for processing a substrate having a first surface and a second surface opposite to the first surface, comprising: a substrate holding part for holding the substrate; and a pressure holding part on the above-mentioned The second surface of the substrate is provided with pressurized ozone water; and a heating unit heats the ozone water at a point of use for processing the substrate; and the pressure maintaining unit is opposed to the substrate at intervals. A portion of the second surface of the substrate. The substrate processing apparatus according to claim 11, wherein the pressure holding portion includes: a main body portion facing the second surface of the substrate at intervals; and a wing portion disposed on an edge of the main body portion , from the main body to the side of the substrate The said 2nd surface is extended, and faces the said 2nd surface of the said board|substrate. The substrate processing apparatus according to claim 11, further comprising: a robot arm having one end and the other end supporting the pressure holding portion; and a shaft supporting the other end of the robot arm and extending in the height direction , and can be rotated; and an angle adjuster, which is an actuator for adjusting the rotation angle of the shaft. A substrate processing apparatus for processing a substrate having a first surface and a second surface opposite to the first surface, comprising: a substrate holding part for holding the substrate; and a pressure holding part on the above-mentioned The second surface of the substrate is arranged with pressurized ozone water; and a heating part heats the ozone water at a point of use for processing the substrate; and the heating part has a warm water path and an ozone water path In the configuration of merging inside the pressure holding portion, the heated ozonated water can be obtained. The substrate processing apparatus of claim 14, further comprising a warm water source connected to the inlet of the warm water path, and the warm water source generates warm water having a temperature higher than that of the ozone water from the ozone water source. A substrate processing apparatus for processing a substrate having a first surface and a second surface opposite to the first surface, comprising: a substrate holding portion for holding the substrate; a pressure holding part for disposing pressurized ozone water on the second surface of the substrate; and a pressure control part for controlling the pressure of the pressurized ozone water; The gap length between the second surfaces of the substrate is adjusted, and the pressure of the ozone water in the pressure holding portion is adjusted. The substrate processing apparatus according to claim 16, further comprising: a pressure gauge for detecting the pressure in the pressure holding unit; a pressure control unit for controlling the pressure of the pressurized odorous water; ozone a water source for supplying ozone water to the pressure holding part via the pressure control part; a robot arm having one end and the other end supporting the pressure holding part; a shaft supporting the other end of the robot arm along the height direction The extension can be rotated and can be displaced in the height direction; an angle adjuster is an actuator for adjusting the rotation angle of the shaft; and a height adjuster is an actuator for adjusting the height position of the shaft.

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