JP7377026B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

The present invention relates to a substrate processing method and a substrate processing apparatus, and particularly to a substrate processing method using ozone water and a substrate processing apparatus used for the same.

After a process using a resist film is performed on a wafer (substrate), the resist film is often removed from the substrate. In particular, since a resist film used as an implantation mask for an ion implantation process is difficult to remove, a cleaning liquid with a strong action is generally used. A sulfuric acid/hydrogen peroxide mixture (SPM) has been widely known as a cleaning liquid having a strong effect. However, in recent years, there has been a demand for a substrate processing method that does not use SPM due to the heavy burden of waste liquid processing.

JP-A-2008-311591 discloses a substrate processing method that removes residual organic matter remaining on the surface of the substrate by immersing the substrate in ozone water without using chemicals that have a large environmental impact such as sulfuric acid. are doing. This method is intended to improve the efficiency of the removal process of residual organic matter adhering to the substrate. Specifically, ozonated water preheated by a heating means is supplied to a sealed substrate processing tank and brought into a high pressure state higher than atmospheric pressure.

Japanese Patent Application Publication No. 2008-311591

According to the technology described in the above-mentioned publication, the position where ozonated water touches the substrate in the substrate processing tank is the point of use (POU) of the ozonated water. According to this technique, ozonated water is preheated in a heating means before reaching the point of use. Therefore, the ozonated water is in a high temperature state not only when it is located at the point of use but also during the period from the heating means until it reaches the point of use. According to studies by the present inventors, in this case, the ozone concentration of the ozonated water tends to decrease before the ozonated water reaches the point of use. As a result, the treatment effect of ozone becomes weaker.

The present invention has been made to solve the above-mentioned problems, and its purpose is to provide a substrate processing method that can strengthen the effect of ozone on a substrate.

A first aspect is a substrate processing method, which includes a step of holding a substrate having a first surface and a second surface opposite to the first surface, and applying pressure on the second surface of the substrate. and heating the ozonated water at a point of use for substrate processing.

A second aspect is the substrate processing method of the first aspect, in which the step of heating ozonated water includes the steps of heating the substrate and conducting heat from the substrate to the ozonated water.

A third aspect is the substrate processing method of the second aspect, in which the step of heating the substrate includes the step of heating the substrate from the second surface.

A fourth aspect is the substrate processing method of the second aspect, in which the step of heating the substrate includes the step of heating the substrate from the first surface.

A fifth aspect is the substrate processing method of the first aspect, in which the step of heating ozonated water includes adding hot water having a second temperature higher than the first temperature to the ozonated water having the first temperature. including the step of mixing.

A sixth aspect is the substrate processing method according to the first to fifth aspects, wherein the step of disposing ozonated water includes the step of controlling the pressure of ozonated water disposed on the second surface of the substrate. .

A seventh aspect is the substrate processing method according to the first to sixth aspects, including the step of arranging a pressure holding part having opposing surfaces facing each other with an interval on at least a part of the second surface of the substrate. Furthermore, the step of disposing ozonated water includes the step of supplying ozonated water between at least a portion of the second surface of the substrate and the opposing surface of the pressure holding section.

An eighth aspect is the substrate processing method according to the seventh aspect, in which the pressure holding part is disposed at a main part facing the second surface of the substrate at a distance, and at an edge of the main part; a wing portion extending from the substrate toward the second surface of the substrate and facing the second surface of the substrate.

A ninth aspect is the substrate processing method according to the eighth aspect, in which the wing portion faces the second surface of the substrate with a gap length HG therebetween and has a cylindrical shape with an inner peripheral length LI. The pressure holding section includes a supply section that supplies ozonated water between the second surface of the substrate and the main section and has a cross-sectional area SC, and SC>LI·HG is satisfied.

A tenth aspect is the substrate processing method according to the seventh to ninth aspects, wherein the pressure holding part has a plurality of introduction paths for receiving ozonated water, and the step of placing the ozonated water includes: It includes a step of introducing ozonated water into a plurality of introduction channels of the pressure holding section.

An eleventh aspect is the substrate processing method according to the tenth aspect, in which the step of introducing ozonated water into the plurality of introduction passages of the pressure holding section involves introducing a cross-sectional area larger than the cross-sectional area of each of the plurality of introduction passages. The method includes a step of branching ozonated water from the pipe having the ozone water to a plurality of introduction channels.

A twelfth aspect is a substrate processing method, which includes a step of holding a substrate having a first surface and a second surface opposite to the first surface, and applying pressure on the second surface of the substrate. arranging the ozonated water. The step of disposing ozone water includes the step of controlling the pressure of ozone water disposed on the second surface of the substrate.

A thirteenth aspect is a substrate processing apparatus for processing a substrate having a first surface and a second surface opposite to the first surface, the substrate processing apparatus comprising: a substrate holding section for holding the substrate; A pressure holding part for disposing pressurized ozonated water and a heating part for heating the ozonated water at a point of use for substrate processing are provided on the second surface.

A fourteenth aspect is a substrate processing apparatus for processing a substrate having a first surface and a second surface opposite to the first surface, the substrate processing apparatus comprising: a substrate holding section for holding the substrate; A pressure holding part for disposing pressurized ozone water and a pressure control part for controlling the pressure of the pressurized ozone water are provided on the second surface.

According to the first aspect, by disposing pressurized ozonated water on the second surface of the substrate, it is possible to compare the case where unpressurized ozonated water is disposed on the second surface of the substrate. This makes it easier to maintain a high ozone concentration in the ozone water on the second surface of the substrate. Furthermore, by heating the ozonated water at the point of use, the ozone concentration in the ozonated water can be prevented from decreasing before reaching the point of use, compared to the case where the ozonated water is heated before the point of use. From the above, high temperature and highly concentrated ozonated water can be provided to the point of use on the second surface of the substrate. This can promote the chemical reaction of ozonated water at the point of use. Therefore, the action of ozone on the substrate can be strengthened.

According to a second aspect, the ozonated water is heated by conducting heat from the substrate to the ozonated water. This allows ozonated water to be heated at the point of use.

According to the third aspect, heating the substrate includes heating the substrate from the second surface. Thereby, it is possible to preferentially heat the second surface, which is the surface to be processed, of the first surface and the second surface.

According to the fourth aspect, heating the substrate includes heating the substrate from the first surface. Thereby, the adverse effects of heating are less likely to be exerted on the second surface.

According to the fifth aspect, ozonated water can be heated by mixing it with hot water.

According to the sixth aspect, the step of disposing ozonated water includes the step of controlling the pressure of ozonated water disposed on the second surface of the substrate. Thereby, the substrate can be stably treated with ozonated water.

According to the seventh aspect, the method includes the step of supplying ozonated water between at least a portion of the second surface of the substrate and the opposing surface of the pressure holding section. This makes it easier to apply pressure to the ozonated water between at least a portion of the second surface of the substrate and the opposing surface of the pressure holding section.

According to the eighth aspect, the pressure holding part has a wing part arranged at the edge of the main part. This makes it easier to increase the pressure within the pressure holding section.

According to the ninth aspect, SC>LI·HG is satisfied. This makes it easier to increase the pressure within the pressure holding section.

According to the tenth aspect, ozone water is introduced into the plurality of introduction paths of the pressure holding section. This suppresses unevenness in the position where fresh ozonated water is introduced. Therefore, it is possible to suppress processing unevenness due to deactivation of ozonated water.

According to the eleventh aspect, ozonated water is branched from the pipe having a cross-sectional area larger than the cross-sectional area of each of the plurality of introduction passages of the pressure holding unit to the plurality of introduction passages. This makes it easier to maintain the pressure of ozone water in the introduction path. Therefore, it becomes easier to maintain the ozone concentration of the ozonated water in the introduction path.

According to the twelfth aspect, the pressure of pressurized ozone water is controlled. Thereby, substrate processing can be performed stably.

According to the thirteenth aspect, by disposing pressurized ozonated water on the second surface of the substrate, compared to disposing unpressurized ozonated water on the second surface of the substrate. This makes it easier to maintain a high ozone concentration in the ozone water on the second surface of the substrate. Furthermore, by heating the ozonated water at the point of use, the ozone concentration in the ozonated water can be prevented from decreasing before reaching the point of use, compared to the case where the ozonated water is heated before the point of use. From the above, high temperature and highly concentrated ozonated water can be provided to the point of use on the second surface of the substrate. This can promote the chemical reaction of ozonated water at the point of use. Therefore, the action of ozone on the substrate can be strengthened.

According to the fourteenth aspect, the pressure of pressurized ozone water is controlled. Thereby, substrate processing can be performed stably.

1 is a plan view schematically showing an example of the configuration of a substrate processing system according to Embodiment 1 of the present invention. 2 is a block diagram schematically showing the configuration of a control section included in the substrate processing system of FIG. 1. FIG. 1 is a side view schematically showing the configuration of a substrate processing apparatus in Embodiment 1 of the present invention. 1 is a partial cross-sectional view schematically showing the configuration of a substrate processing apparatus in Embodiment 1 of the present invention. 1 is a flow diagram schematically showing a substrate processing method in Embodiment 1 of the present invention. FIG. FIG. 2 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus in Embodiment 2 of the present invention. FIG. 3 is a partial cross-sectional view schematically showing the configuration of a substrate processing apparatus in Embodiment 3 of the present invention. FIG. 4 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus in Embodiment 4 of the present invention.

Embodiments of the present invention will be described below based on the drawings. In the following drawings, the same or corresponding parts are given the same reference numerals and the description thereof will not be repeated.

<Embodiment 1>
FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing system 100 according to the first embodiment. The substrate processing system 100 includes a load port LP, an indexer robot IR, a center robot CR, a control section 90, and at least one processing unit DP (four processing units in FIG. 1). The plurality of processing units DP are for processing wafers WF (substrates), and at least one of them corresponds to the substrate processing apparatus 101. The substrate processing apparatus 101 is a single-wafer type apparatus that can be used to remove organic substances attached to the wafer WF. This organic material is typically a used resist film. This resist film is used, for example, as an implantation mask for an ion implantation process.

The control unit 90 can control the operation of each unit included in the substrate processing system 100. Each carrier C is a container that accommodates a wafer WF. The load port LP is a container holding mechanism that holds a plurality of carriers C. The indexer robot IR can transport the wafer WF between the load port LP and the substrate platform PS. The central robot CR can transport a wafer WF from one of the substrate platform PS and at least one processing unit DP to the other one. With the above configuration, the indexer robot IR, the substrate platform PS, and the center robot CR function as a transport mechanism that transports the wafer WF between each of the processing units DP and the load port LP.

The unprocessed wafer WF is taken out from the carrier C by the indexer robot IR and delivered to the center robot CR via the substrate platform PS. The center robot CR carries this unprocessed wafer WF into the processing unit DP. The processing unit DP processes the wafer WF. The processed wafer WF is taken out from the processing unit DP by the center robot CR, passes through other processing units DP as necessary, and then is delivered to the indexer robot IR via the substrate platform PS. The indexer robot IR carries the processed wafer WF into the carrier C. As described above, the processing on the wafer WF is performed.

FIG. 2 is a block diagram schematically showing the configuration of the control section 90 (FIG. 1). The control unit 90 may be configured by a general computer having an electric circuit. Specifically, the control unit 90 includes a CPU (Central Processing Unit) 91, a ROM (Read Only Memory) 92, a RAM (Random Access Memory) 93, a storage device 94, an input unit 96, a display unit 97, and a communication unit 98. , and a bus line 95 interconnecting them.

The ROM 92 stores basic programs. The RAM 93 is used as a work area when the CPU 91 performs predetermined processing. The storage device 94 is configured by a nonvolatile storage device such as a flash memory or a hard disk device. The input unit 96 is comprised of various switches, a touch panel, etc., and receives input setting instructions such as processing recipes from the operator. The display section 97 is composed of, for example, a liquid crystal display device, a lamp, etc., and displays various information under the control of the CPU 91. The communication unit 98 has a data communication function via a LAN (Local Area Network) or the like. A plurality of modes for controlling each device constituting the substrate processing system (FIG. 1) are preset in the storage device 94. When the CPU 91 executes the processing program 94P, one of the plurality of modes is selected, and each device is controlled according to the selected mode. Further, the processing program 94P may be stored in a recording medium. Using this recording medium, the processing program 94P can be installed in the control unit 90. Furthermore, some or all of the functions executed by the control unit 90 do not necessarily need to be realized by software, and may be realized by hardware such as a dedicated logic circuit.

3 and 4 are a side view and a partial cross-sectional view, respectively, schematically showing the configuration of the substrate processing apparatus according to the first embodiment. The substrate processing apparatus 101 is for processing wafers WF. The wafer WF has a back surface S1 (first surface) and a processing surface S2 (a second surface opposite to the first surface), and at least the processing surface S2 is processed by the substrate processing apparatus 101. . The substrate processing apparatus 101 includes a substrate holding mechanism M1, a pressure application mechanism M2, and a heating mechanism M3 (heating section).

The substrate holding mechanism M1 has a function of holding the wafer WF. Further, the substrate holding mechanism M1 may have a function of rotating the wafer WF. The pressure application mechanism M2 has a pressure holding function that places ozone water LQ pressurized compared to atmospheric pressure on the processing surface S2 of the wafer WF. Moreover, the pressure application mechanism M2 may have a pressure control function to control the pressure of the pressurized ozonated water LQ. The heating mechanism M3 has a heating function to heat the ozonated water LQ at the point of use for processing the wafer WF. In the present embodiment, the heating mechanism M3 has a heating function of heating the wafer WF, and the ozonated water LQ is mainly heated by thermal conduction from the heated wafer WF.

The substrate holding mechanism M1 (FIG. 3) includes a vacuum chuck 11 (substrate holding section) having an exhaust path 12, a vacuum pump 13, a rotating shaft 14, and a rotating motor 15. As the vacuum pump 13 evacuates the exhaust path 12, the back surface S1 of the wafer WF is attracted onto the vacuum chuck 11. Thereby, the vacuum chuck 11 holds the wafer WF. The rotating shaft 14 supports the vacuum chuck 11. The vacuum chuck 11 is rotated by the rotating motor 15 rotating the rotating shaft 14 as shown by the arrow RC. As a result, the wafer WF held by the vacuum chuck 11 rotates.

The pressure application mechanism M2 (FIG. 3) includes a pressure nozzle 31 (pressure holding section), an ozone water source 41, a pressure regulator 42 (pressure control section), a pressure gauge 50, an arm 61, a shaft 62, and an angle It has an adjuster 63 and a height adjuster 64. The ozone water source 41 generates ozone water by dissolving ozone gas in pure water. The generated ozone water is supplied to the pressure nozzle 31 via the pressure regulator 42. The pressure regulator 42 is a pressure increasing device such as a pump, or a pressure reducing device such as a pressure reducing valve.

The pressure nozzle 31 can place pressurized ozone water LQ on the processing surface S2 of the wafer WF. The pressure of the pressurized ozonated water LQ may be controlled by the pressure regulator 42. The pressure can be controlled by adjusting the pressure at which the pressure regulator 42 discharges ozone water to the pressure nozzle 31. This adjustment may be performed with reference to the pressure within the pressure nozzle 31 detected by the pressure gauge 50. The ozone water source supplies ozone water to the pressure nozzle 31 via the pressure regulator 42 .

Pressure nozzle 31 is supported at one end of arm 61. The other end of the arm 61 is supported by a shaft 62. The shaft 62 extends along the height direction. The shaft 62 can rotate, and its rotation angle is adjusted by an angle adjuster 63, which is an actuator, as shown by arrow RN (FIG. 3). Thereby, the direction in which the arm 61 extends from the shaft 62 is adjusted. As a result, the position of the pressure nozzle 31 is scanned on the processing surface S2 of the wafer WF, as shown by the arrow SN (FIG. 3). Further, the shaft 62 can be displaced in the height direction, and its height position is adjusted by a height adjuster 64 that is an actuator. Thereby, the height of arm 61 is adjusted as shown by arrow HN (FIG. 3). Thereby, the gap length HG between the pressure nozzle 31 and the processing surface S2 of the wafer WF is adjusted. This allows the pressure of the ozonated water LQ within the pressure nozzle 31 to be adjusted, so the height regulator 64 is a type of pressure control unit.

The pressure nozzle 31 has a wing portion 31A, a main portion 31B, and a supply portion 31C. The main portion 31B faces the processing surface S2 of the wafer WF with an interval therebetween. The wing portion 31A is arranged at the edge of the main portion 31B, extends from the main portion 31B toward the processing surface S2 of the wafer WF, and faces the processing surface S2 of the wafer WF. In this embodiment, the wing portion 31A has a cylindrical shape. The supply section 31C supplies ozone water LQ between the processing surface S2 of the wafer WF and the main section 31B.

The heating mechanism M3 can heat the ozonated water LQ at the point of use for processing the wafer WF. In this embodiment, heating mechanism M3 heats wafer WF. Then, the heat from the heated wafer WF is conducted to the ozonated water LQ, thereby heating the ozonated water LQ. The heating of the wafer WF may be performed on at least one of the processing surface S2 and the back surface S1. Further, the heating method may be performed using, for example, light irradiation or thermal conduction. In the case of light irradiation, the temperature of the wafer WF increases by absorbing the energy of the light LT (FIG. 4). In the case of heat conduction, the temperature of the wafer WF increases due to heat conduction to the wafer WF. In this embodiment, the heating mechanism M3 includes at least one of a lamp heater 81 and a conduction heater 82.

The lamp heater 81 irradiates the processing surface S2 of the wafer WF with light LT (FIG. 4). Preferably, the lamp heater 81 includes a light emitting diode (LED) that emits light LT. The wavelength of the light LT is preferably one that is easily absorbed by the wafer WF. From this point of view, when the wafer WF is a silicon wafer, it is preferable that the light LT has a peak intensity at wavelengths of approximately 450 nm and 550 nm. The lamp heater 81 may be attached on the outer main portion 31B of the pressure nozzle 31. Thereby, the lamp heater 81 can be scanned in synchronization with the scan of the pressure nozzle 31 (FIG. 3: arrow SN). In this case, since the light LT reaches the wafer WF via the main portion 31B, the main portion 31B needs to be made of a material that transmits the light LT, and is made of a transparent material such as quartz glass, for example.

Next, the wafer (substrate) processing method in the first embodiment will be described below.

In step S10 (FIG. 5), indexer robot IR and center robot CR (FIG. 1) transport wafer WF from load port LP to substrate processing apparatus 101.

In step S30 (FIG. 5), the substrate holding mechanism M1 (FIG. 3) holds the wafer WF. Specifically, the vacuum chuck 11 attracts the back surface S1 of the wafer WF by evacuation by the vacuum pump 13. Next, the rotation motor 15 rotates the rotation shaft 14 (arrow RC), thereby rotating the wafer WF.

In step S40 (FIG. 5), the pressure application mechanism M2 (FIG. 3) places pressurized ozonated water LQ on the processing surface S2 of the wafer WF. Specifically, first, the pressure nozzle 31 (FIG. 4) is placed. The pressure nozzle 31 arranged in this manner has an opposing surface (lower surface) that faces a part of the processing surface S2 of the wafer WF with an interval therebetween. Ozonated water LQ is supplied between this opposing surface and a part of the processing surface S2 of the wafer WF. At this time, the wafer WF is rotated (see arrow RC in FIG. 3), and the pressure nozzle 31 is scanned (see arrow SN in FIG. 3). Thereby, pressurized ozone water can be applied to the entire treatment surface S2. Further, by performing the scan, the positions where the fresh ozonated water LQ, which has not yet been significantly deactivated, are placed are made uniform.

When the ozonated water LQ is supplied, the wing portion 31A (FIG. 4) of the pressure nozzle 31 faces the processing surface S2 of the wafer WF with a gap length HG larger than zero. When the cylindrical shape of the wing portion 31A has an inner peripheral length LI and the inside of the supply portion 31C has a cross-sectional area SC, it is preferable that SC>LI·HG is satisfied. In addition, it is preferable that the supply part 31C has a cylindrical shape, and in that case, the cross-sectional area SC is calculated by SC=π・(D1/2) ² using the inner diameter D1 (FIG. 4) of the cylindrical shape. . Moreover, it is preferable that the wing portion 31A has a cylindrical shape, and in that case, the inner peripheral length LI is calculated by LI=π·D2 using the inner diameter D2 of the cylindrical shape.

When the ozonated water LQ is placed on the processing surface S2 of the wafer WF in the pressure nozzle 31 as described above, the ozonated water LQ is not only pressurized, but also the pressure of the ozonated water LQ is controlled. It is preferable. This control can be performed by adjusting the pressure at which the pressure regulator 42 discharges ozone water to the pressure nozzle 31. Alternatively or in addition to this, the gap length HG may be adjusted. Preferably, the pressure is controlled with reference to the pressure gauge 50.

Since the gap length HG (FIG. 4) is larger than zero, the supplied ozonated water LQ leaks out of the pressure nozzle 31 on the processing surface S2 of the wafer WF as shown by the arrow EV (FIG. 4). . Therefore, in this embodiment, the ozone water LQ in the pressure nozzle 31 continues to be replaced with fresh water supplied from the ozone water source 41. Note that the leaked ozonated water LQ flows down from above the treatment surface S2 as shown by the arrow FL (FIG. 3).

In step S50 (FIG. 5), the heating mechanism M3 (FIG. 4) heats the ozonated water LQ at the point of use for processing the wafer WF. The point of use is the inside of the pressure nozzle 31, and more specifically, the part of the ozonated water LQ inside the pressure nozzle 31 that comes into contact with the treatment surface S2. In this embodiment, heating mechanism M3 first heats wafer WF. The wafer WF may be heated from the processing surface S2, and alternatively or in addition thereto, may be heated from the back surface S1. Heat from the heated wafer WF is conducted to the ozone water LQ due to the temperature difference. As a result, ozonated water LQ is heated at the point of use. It is preferable that the ozone water LQ is not heated between the ozone water source 41 and the pressure nozzle 31. The wafer WF is processed by the ozone water heated at the use point acting on the processing surface S2 as described above. Specifically, the wafer WF is cleaned, for example, resist is removed.

In step S60 (FIG. 5), after the above processing, a rinsing process of the wafer WF is performed. The rinsing step may be performed by the substrate processing apparatus 101 when the substrate processing apparatus 101 also has a rinsing function, or may be performed by another processing unit DP (FIG. 1).

In step S80 (FIG. 5), indexer robot IR and center robot CR (FIG. 1) transport the rinsed wafer WF from processing unit DP to load port LP.

With the above steps, the processing on the wafer WF is completed. Note that in addition to ozone, other substances may be dissolved in the ozonated water LQ, and for example, at least one of ammonia and hydrogen peroxide may be dissolved therein. Moreover, air bubbles may be mixed in the ozonated water LQ, for example, ozone bubbles may be mixed therein.

According to the present embodiment, when pressurized ozonated water LQ is placed on the processing surface S2 of the wafer WF, unpressurized ozonated water LQ is placed on the processing surface S2 of the wafer WF. Compared to this, it becomes easier to maintain a high ozone concentration in the ozone water LQ on the processing surface S2 of the wafer WF. Generally, highly concentrated ozonated water of about 200 to 300 ppm can be prepared under pressure sufficiently higher than atmospheric pressure, but when this is released into an environment under atmospheric pressure, the ozone concentration quickly rises to about 60 ppm. It will drop. Furthermore, according to the present embodiment, by heating the ozonated water LQ at the point of use, the ozone concentration in the ozonated water LQ reaches the point of use, compared to the case where the ozonated water LQ is heated before the point of use. This will prevent it from dropping earlier. From the above, high temperature and high concentration ozonated water LQ can be provided to the use point on the processing surface S2 of the wafer WF. Thereby, the chemical reaction of the ozonated water LQ at the point of use can be promoted. Therefore, the effect of ozone on the processing surface S2 of the wafer WF can be strengthened.

Ozonated water LQ is heated by conducting heat from wafer WF to ozonated water LQ. Thereby, the ozonated water LQ can be heated at the point of use.

The wafer WF may be heated from the processing surface S2. In this case, the processing surface S2, which is the surface to be processed, of the back surface S1 and the processing surface S2 can be heated preferentially. Alternatively, wafer WF may be heated from the back surface S1. In this case, the adverse effects of heating are less likely to affect the processing surface S2.

It is preferable that the pressure of the ozonated water LQ placed on the processing surface S2 of the wafer WF be controlled. Thereby, the wafer WF can be stably processed with the ozonated water LQ.

Ozonated water LQ is supplied between a part of the processing surface S2 of the wafer WF and the opposing surface of the pressure nozzle 31. This makes it easier to apply pressure to the ozonated water LQ between a part of the processing surface S2 of the wafer WF and the opposing surface of the pressure nozzle 31.

The pressure nozzle 31 has a wing portion 31A disposed at the edge of the main portion 31B. This makes it easier to increase the pressure inside the pressure nozzle 31. In particular, when the formula SC>LI·HG is satisfied as described above, the pressure within the pressure nozzle 31 is more likely to be increased.

By using the vacuum chuck 11 as the substrate holding section, the back surface S1 of the wafer WF can be supported almost uniformly. Thereby, it is possible to prevent the wafer WF from warping due to the pressure of the ozonated water LQ. Note that the substrate holding section is not limited to a vacuum chuck, and may be a mechanical chuck.

(Embodiment 2)
FIG. 6 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 102 in the second embodiment. Hereinafter, differences from the substrate processing apparatus 101 (FIGS. 3 and 4: Embodiment 1) will be mainly explained.

The substrate holding mechanism M1 may be the same as in the first embodiment. However, in this embodiment, the wafer WF does not necessarily need to be rotated. Therefore, the rotating shaft 14 and the rotating motor 15 may be omitted.

The pressure application mechanism M2 has a wing part 32A, a main part 32B, and a supply part 32C instead of the pressure nozzle 31 (FIG. 4: Embodiment 1) having a wing part 31A, a main part 31B, and a supply part 31C. It includes a pressure cup 32 (pressure holding part). The main portion 32B has an opposing surface (lower surface in the figure) that faces the entire processing surface S2 of the wafer WF with an interval therebetween. Thereby, the pressurized ozone water LQ can be supplied between the opposing surface of the pressure cup 32 and the entire processing surface S2 of the wafer WF.

In this embodiment, the sealing material 51 is provided so as to be sandwiched between the wing portion 32A of the pressure cup 32 and the vacuum chuck 11. The sealing material 51 may be fixed to one of the vacuum chuck 11 and the wing portion 32A of the pressure cup 32, and when the vacuum chuck 11 and the wing portion 32A of the pressure cup 32 approach each other, the vacuum chuck 11 and the pressure cup 32 and the wing portion 32A. The sealing ability of the sealing material 51 depends on the load LD with which the wing portion 32A of the pressure cup 32 is pressed against the vacuum chuck 11. This load may be adjusted by a load adjuster 49. Since the pressure of the pressurized ozonated water LQ can be controlled by adjusting the sealing ability, the load regulator 49 is a type of pressure control unit. When pressure is applied inside the pressure cup 32 beyond its sealing capacity, ozone water LQ leaks from the sealing material 51 (arrow EV1). Furthermore, a check valve 52 (pressure control section) may be attached to the pressure cup 32 for discharging pressure as necessary. When the pressure in the pressure cup 32 exceeds the set pressure of the check valve 52, leakage of ozonated water LQ (arrow EV2) occurs at the check valve 52. Thereby, the pressure of the pressurized ozonated water LQ can be controlled.

In the illustrated configuration, the vacuum chuck 11 and the wing portion 32A of the pressure cup 32 are sealed with the sealing material 51 at a location where they face each other in the vertical direction; however, as a modified example, the vacuum chuck and the wing portion 32A are Sealing with a sealing material may be performed at locations where the two are horizontally opposed to each other.

When the substrate holding mechanism M1 has the rotating shaft 14 and the rotating motor 15, a mechanism is provided for making the pressure cup 32 rotatable as shown by the arrow RS in synchronization with the rotation of the vacuum chuck 11. For example, a rotary motor 48 is provided to rotate the pressure cup 32.

Pressure application mechanism M2 may include an ozone gas source 43 and a pressure regulator 44. Ozone gas source 43 generates ozone gas. The generated ozone gas is supplied to the pressure cup 32 via the pressure regulator 44. The pressure regulator 44 is a pressure increasing device such as a pump, or a pressure reducing device such as a pressure reducing valve. When the pressure application mechanism M2 has these configurations, the pressure inside the pressure cup 32 is increased by storing ozone water LQ in the pressure cup 32 and then introducing pressurized ozone gas into the pressure cup 32. be able to. In this case, the pressure regulator 42 connected to the ozone water source 41 may be omitted.

This embodiment also provides substantially the same effects as the first embodiment. Furthermore, by using the vacuum chuck 11 as the substrate holder, the volume of ozonated water LQ required to fill the space between the substrate holder and the pressure cup 32 can be suppressed. Note that the substrate holding section may be a mechanical chuck as long as this increase in volume is allowed.

Further, according to the present embodiment, unlike the first embodiment, a mechanism for scanning (FIG. 3: arrow SN) is not required. Also, unlike the first embodiment, the mechanism for rotating the wafer WF can also be omitted. However, if complication of the apparatus is acceptable, it is preferable that the wafer WF be rotated also in this embodiment. This rotation shakes off air bubbles attached to the processing surface S2 of the wafer WF. Therefore, it is possible to prevent uneven processing caused by locally attached bubbles.

(Embodiment 3)
FIG. 7 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 103 in the third embodiment. Hereinafter, differences from the substrate processing apparatus 101 (FIGS. 3 and 4: Embodiment 1) will be mainly explained.

In this embodiment, the pressure application mechanism M2 includes a pressure nozzle 33 instead of the pressure nozzle 31 (FIGS. 3 and 4: Embodiment 1). Like the pressure nozzle 31, the pressure nozzle 33 scans the processing surface S2 of the wafer WF while maintaining the gap length HG (see arrow SN in FIG. 3). The gap length HG is, for example, about 0.5 mm. The mechanism for performing the scan and controlling the gap length HG may be similar to that of the first embodiment. The pressure nozzle 33 must be made of a material resistant to ozone, for example quartz or Teflon.

The pressure nozzle 33 has an ozone water path 33o and a hot water path 33h. The entrance of the ozone water path 33o and the entrance of the hot water path 33h are independent from each other. The hot water path 33h passes through the pressure nozzle 33 and reaches the opposing surface (the lower surface of the pressure nozzle 33 in the figure) that faces the treatment surface S2. This opposing surface may be flat. Further, the outer edge of this opposing surface may be circular, and its diameter is, for example, about 60 mm. The ozone water path 33o joins the hot water path 33h inside the pressure nozzle 33.

It is preferable that the cross-sectional area of the ozone water path 33o is smaller in a portion connected to the hot water path 33h than in a portion away from the hot water path 33h. In other words, the cross-sectional area C7 of the portion connected to the hot water path 33h is smaller than the cross-sectional area C6 of the portion remote from the hot water path 33h. With this configuration, the pressure of ozonated water can be kept higher until just before it is mixed with hot water. Therefore, the ozone concentration of the ozone water from the ozone water source 41 can be easily maintained at a high level until just before it is mixed with hot water. Note that the cross-sectional area here is an area in a plane perpendicular to the extending direction of the route.

Further, in this embodiment, the heating mechanism M3 includes a hot water source 83 connected to the inlet of the hot water path 33h of the pressure nozzle 33. The hot water source 83 generates hot water having a temperature (second temperature) higher than the temperature (first temperature) of the ozonated water from the ozone water source 41. This second temperature is 40°C or higher, preferably 70°C or higher.

With the above configuration, hot water having a second temperature higher than the first temperature is mixed with ozone water having the first temperature in the pressure nozzle 33 . Thereby, heated ozonated water LQ can be obtained. For example, ozone water having a temperature of 75° C. and a concentration of 40 ppm can be placed on the treatment surface S2.

(Embodiment 4)
FIG. 8 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 104 in the fourth embodiment. Hereinafter, differences from the substrate processing apparatus 103 (FIG. 7: Embodiment 3) will be mainly explained.

In this embodiment, the pressure application mechanism M2 includes a pressure nozzle 34 instead of the pressure nozzle 33 (FIG. 7: Embodiment 3).

The pressure nozzle 34 has a hot water path 34h similar to the hot water path 33h (FIG. 7: Embodiment 3) for passing hot water. Further, the pressure nozzle 34 has a plurality of introduction passages 34o for receiving ozone water from the ozone water source 41. The introduction path 34o may include at least one introduction path 34o1 that reaches the opposite surface facing the processing surface S2 (the lower surface of the pressure nozzle 34 in the figure), and preferably includes a plurality of introduction paths 34o1 as shown. including. Further, the introduction path 34o may include an introduction path 34o2 that joins the hot water path 34h within the pressure nozzle 34. In this embodiment, ozonated water is introduced into the plurality of introduction paths 34o in order to arrange the ozonated water LQ on the processing surface S2 of the wafer WF. This configuration suppresses unevenness in the position where fresh ozonated water is introduced. Therefore, it is possible to suppress processing unevenness due to deactivation of ozonated water.

When introducing ozonated water into the plurality of introduction passages 34o of the pressure nozzle 34, the ozonated water LQ is branched from the piping 45 to the plurality of introduction passages 34o. Here, it is preferable that the cross-sectional area C8 of the pipe 45 is larger than the cross-sectional area C9 of each of the plurality of introduction paths 34o. This configuration makes it easier to maintain the pressure of ozone water at a higher level until just before it is mixed with hot water. Therefore, the ozone concentration of the ozone water from the ozone water source 41 can be easily maintained at a high level until just before it is mixed with hot water. Note that the cross-sectional area here is an area in a plane perpendicular to the extending direction of the pipe 45 or the introduction path 34o.

It is preferable that a valve 47 is inserted between the piping 45 and each of the plurality of introduction paths 34o. By controlling the opening and closing of the individual valves 47, it is possible to reduce processing unevenness on the processing surface S2 of the wafer WF.

For example, the pressure nozzle 34 has a facing surface (bottom surface in the figure) having a circular outer edge, the outlet of the hot water path 34h is arranged in the center thereof, and the outlet of the hot water path 34h is arranged in the center thereof, and The exits of the plurality of introduction paths 34o1 are arranged. With this configuration, processing unevenness in the radial direction can be suppressed. Further, when the valve 47 is controlled as described above, processing unevenness in the radial direction can be further suppressed. As a modification, the introduction path 34o1 may be omitted and only the introduction path 34o2 may be provided, thereby simplifying the configuration. However, in this modification, fresh ozonated water is supplied only to the center of the opposing surface (lower surface in the figure) of the pressure nozzle 34, so the further away from the center, the more deactivated the ozonated water will be supplied. . Therefore, uneven processing tends to occur.

Note that the features of the pressure nozzle 34 other than those described above are substantially the same as those of the pressure nozzle 33 described above (FIG. 7: Embodiment 3), and therefore the description thereof will be omitted.

Although this invention has been described in detail, the above description is illustrative in all aspects, and the invention is not limited thereto. It is understood that countless variations not illustrated can be envisaged without departing from the scope of the invention. The configurations described in each of the above embodiments and modifications can be appropriately combined or omitted as long as they do not contradict each other.

11: Vacuum chuck (substrate holding part)
12: Exhaust path 13: Vacuum pump 14: Rotating shaft 15, 48: Rotating motor 31, 33, 34: Pressure nozzle (pressure holding part)
31A, 32A: Wing part 31B, 32B: Main part 31C, 32C: Supply part 32: Pressure cup (pressure holding part)
33h: Hot water route 33o: Ozone water route 34h: Hot water route 34o, 34o1, 34o2: Introduction route 41: Ozone water source 42, 44: Pressure regulator 43: Ozone gas source 45: Piping 47: Valve 49: Load regulator 50: Pressure Total 51: Seal material 52: Check valve 61: Arm 62: Shaft 63: Angle adjuster 64: Height adjuster 81: Lamp heater 82: Conduction heater 83: Hot water source 101 to 104: Substrate processing equipment LQ: Ozone water M1: Substrate holding mechanism M2: Pressure application mechanism M3: Heating mechanism S1: Back surface (first surface)
S2: Processing surface (second surface)
WF: Wafer (substrate)

Claims (16)

holding a substrate having a first surface and a second surface opposite the first surface;
placing pressurized ozone water on the second surface of the substrate;
heating the ozonated water at the point of use for processing the substrate;
arranging a pressure holding part having opposing surfaces facing each other with an interval on at least a portion of the second surface of the substrate;
Equipped with
The step of disposing the ozonated water includes the step of supplying the ozonated water between at least a portion of the second surface of the substrate and the opposing surface of the pressure holding part,
The pressure holding part is
a main portion facing the second surface of the substrate at a distance;
a wing portion disposed at an edge of the main portion, extending from the main portion toward the second surface of the substrate, and facing the second surface of the substrate;
Substrate processing methods, including : The wing portion faces the second surface of the substrate with a gap length HG therebetween, and has a cylindrical shape with an inner peripheral length LI,
The pressure holding unit includes a supply unit that supplies the ozone water between the second surface of the substrate and the main portion and has a cross-sectional area SC,
SC > LI/HG
The substrate processing method according to claim 1 , wherein the following is satisfied. The pressure holding section has a plurality of introduction paths for receiving the ozonated water,
3. The substrate processing method according to claim 1 , wherein the step of arranging the ozonated water includes the step of introducing the ozonated water into the plurality of introduction paths of the pressure holding section. holding a substrate having a first surface and a second surface opposite the first surface;
placing pressurized ozone water on the second surface of the substrate;
heating the ozonated water at the point of use for processing the substrate;
arranging a pressure holding part having opposing surfaces facing each other with an interval on at least a portion of the second surface of the substrate;
Equipped with
The step of disposing the ozonated water includes the step of supplying the ozonated water between at least a portion of the second surface of the substrate and the opposing surface of the pressure holding part,
The pressure holding section has a plurality of introduction paths for receiving the ozonated water,
The substrate processing method, wherein the step of disposing the ozonated water includes a step of introducing the ozonated water into the plurality of introduction paths of the pressure holding section . The step of heating the ozonated water includes:
heating the substrate;
conducting heat from the substrate to the ozonated water;
The substrate processing method according to any one of claims 1 to 4 , comprising: 6. The substrate processing method according to claim 5 , wherein the step of heating the substrate includes a step of heating the substrate from the second surface. 6. The substrate processing method according to claim 5 , wherein the step of heating the substrate includes a step of heating the substrate from the first surface. Any one of claims 1 to 4 , wherein the step of heating the ozonated water includes the step of mixing hot water having a second temperature higher than the first temperature with the ozonated water having a first temperature. The substrate processing method according to item 1 . The pressure holding section has an ozonated water path for passing the ozonated water and a hot water path for passing the hot water, and the ozonated water path joins the hot water path within the pressure holding section. 9. The substrate processing method according to claim 8, wherein a cross-sectional area of the ozone water path is smaller in a portion connected to the hot water path than in a portion away from the hot water path. The substrate processing method according to any one of claims 1 to 9 , wherein the step of disposing the ozone water includes a step of controlling the pressure of the ozone water disposed on the second surface of the substrate. . The step of introducing the ozonated water into the plurality of introduction passages of the pressure holding section includes branching the ozonated water from a pipe having a cross-sectional area larger than the cross-sectional area of each of the plurality of introduction passages to the plurality of introduction passages. The substrate processing method according to claim 10, comprising a step of causing. holding a substrate having a first surface and a second surface opposite the first surface;
placing pressurized ozone water on the second surface of the substrate;
The step of disposing the ozonated water includes the step of controlling the pressure of the ozonated water disposed on the second surface of the substrate,
further comprising the step of arranging a pressure holding part having opposing surfaces facing each other with an interval on at least a portion of the second surface of the substrate,
The step of disposing the ozonated water includes the step of supplying the ozonated water between at least a portion of the second surface of the substrate and the opposing surface of the pressure holding part,
The pressure holding part is
a main portion facing the second surface of the substrate at a distance;
a wing portion disposed at an edge of the main portion, extending from the main portion toward the second surface of the substrate, and facing the second surface of the substrate;
Substrate processing methods, including : holding a substrate having a first surface and a second surface opposite the first surface;
placing pressurized ozone water on the second surface of the substrate;
The step of disposing the ozonated water includes the step of controlling the pressure of the ozonated water disposed on the second surface of the substrate,
further comprising the step of arranging a pressure holding part having opposing surfaces facing each other with an interval on at least a portion of the second surface of the substrate,
The step of disposing the ozonated water includes the step of supplying the ozonated water between at least a portion of the second surface of the substrate and the opposing surface of the pressure holding part,
The pressure holding section has a plurality of introduction paths for receiving the ozonated water,
The substrate processing method, wherein the step of disposing the ozonated water includes a step of introducing the ozonated water into the plurality of introduction paths of the pressure holding section . A substrate processing apparatus for processing a substrate having a first surface and a second surface opposite to the first surface,
a substrate holding part that holds the substrate;
a pressure holding unit that arranges pressurized ozone water on the second surface of the substrate;
a pressure control unit that controls the pressure of the pressurized ozone water;
Equipped with
The pressure holding section has an opposing surface that faces at least a portion of the second surface of the substrate with a space therebetween, and the pressure holding section has an opposing surface that faces at least a portion of the second surface of the substrate, and the pressure holding section has an opposing surface that faces at least a portion of the second surface of the substrate. The ozonated water is supplied between the opposing surface of the
The pressure holding part is
a main portion facing the second surface of the substrate at a distance;
a wing portion disposed at an edge of the main portion, extending from the main portion toward the second surface of the substrate, and facing the second surface of the substrate;
Substrate processing equipment, including : A substrate processing apparatus for processing a substrate having a first surface and a second surface opposite to the first surface,
a substrate holding part that holds the substrate;
a pressure holding unit that arranges pressurized ozone water on the second surface of the substrate;
a pressure control unit that controls the pressure of the pressurized ozone water;
Equipped with
The pressure holding portion has an opposing surface that faces at least a portion of the second surface of the substrate with a space therebetween;
The pressure holding section is arranged so that the ozonated water is introduced between at least a portion of the second surface of the substrate and the opposing surface of the pressure holding section. A substrate processing device that has multiple introduction paths for receiving ozonated water . The substrate processing apparatus according to claim 14 or 15 , further comprising a heating section that heats the ozone water at a point of use for processing the substrate.

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