KR20130052997A - Buffer - Google Patents

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Publication number
KR20130052997A
KR20130052997A KR1020110118421A KR20110118421A KR20130052997A KR 20130052997 A KR20130052997 A KR 20130052997A KR 1020110118421 A KR1020110118421 A KR 1020110118421A KR 20110118421 A KR20110118421 A KR 20110118421A KR 20130052997 A KR20130052997 A KR 20130052997A
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KR
South Korea
Prior art keywords
substrate
buffer unit
housing
liquid
buffer
Prior art date
Application number
KR1020110118421A
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Korean (ko)
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KR101979604B1 (en
Inventor
박주집
권오진
장성호
김붕
Original Assignee
세메스 주식회사
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Priority to KR1020110118421A priority Critical patent/KR101979604B1/en
Publication of KR20130052997A publication Critical patent/KR20130052997A/en
Application granted granted Critical
Publication of KR101979604B1 publication Critical patent/KR101979604B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02101—Cleaning only involving supercritical fluids

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention provides a substrate processing apparatus and method having a buffer. The buffer temporarily stores the substrate and has a liquid processing buffer unit. The liquid treatment buffer unit includes a housing providing a space in which the substrate is stored, a support member disposed in the housing to support the substrate, a nozzle for injecting the chemical liquid onto the substrate, and a discharge line for draining the chemical liquid to the outside of the housing. . This allows the substrate to be carried into the buffer to prevent the remaining chemical liquid from naturally drying.

Description

Buffer {Buffer}

The present invention relates to a buffer and a substrate processing apparatus and method having the same.

In order to manufacture a semiconductor device, a desired pattern is formed on the substrate through various processes such as photolithography, etching, ashing, ion implantation, and thin film deposition. Various chemical solutions are used in each process, and contaminants and particles are generated during the process. In order to remove contaminants and particles, the substrate is washed with a chemical and a rinse liquid, and then the organic solvent is supplied to dry the substrate. However, as the distance between the pattern formed on the substrate and the pattern becomes smaller to 30 nm or less, it is difficult to dry the organic solvent remaining between the pattern and the pattern. In addition, when the organic solvent is naturally dried, as the distance between the patterns becomes smaller, a lining phenomenon occurs between adjacent patterns, thereby causing a process defect.

In general, a supercritical fluid having a surface tension close to zero is used as a drying treatment technique to dry the organic solvent remaining on the substrate. Supercritical carbon dioxide (CO 2 ) in the supercritical fluid has the property of dissolving the organic solvent.

However, the supercritical drying apparatus often causes abnormalities due to difficulties in maintaining high pressure. In this case, the substrate in which the organic solvent remains remains in the atmospheric state in the supercritical drying apparatus, and the organic solvent naturally dries to cause a process defect.

Korean Publication No. 10-2011-58037

The present invention seeks to increase the efficiency of substrate processing processes.

The present invention is intended to prevent the chemical liquid remaining on the substrate from being dried naturally by the progress of the substrate treatment is stopped.

The present invention seeks to efficiently utilize the space of a limited device.

The present invention provides a buffer, and a substrate processing apparatus and method having the same. The buffer includes a standby buffer unit for temporarily waiting a substrate and a liquid processing buffer unit for supplying a chemical liquid to the substrate, wherein the standby buffer unit and the liquid processing buffer unit have a different structure from each other. The processing buffer unit includes a housing providing a space in which the substrate is stored, a support member disposed in the housing to support the substrate, a nozzle for injecting the chemical liquid onto the substrate, and a discharge line for draining the chemical liquid to the outside of the housing. It includes.

The standby buffer unit and the liquid processing buffer unit may have a structure stacked on each other. The standby buffer unit includes a slot for supporting an edge of the substrate; The slot may be provided in plurality. The support member may be provided to support the edge of the substrate. The nozzle may spray the chemical liquid in a spray method.

The substrate processing apparatus includes a load port on which a carrier for receiving a plurality of substrates is seated, a process module for processing a substrate, and a transfer frame for transferring a substrate between the load port and the process module; The load port, the transfer frame, and the process module are sequentially disposed in one direction, and the process module is a first process chamber for supplying a chemical solution to a substrate and a first process, and supplying a fluid to the substrate for a second process. A second process chamber disposed at one end of the transfer frame, the substrate temporarily waiting, a buffer having a liquid processing buffer unit, and disposed at one side or both sides of the first process chamber and the second process chamber; And a transfer unit configured to position the buffer at the other end and transfer the substrate between the first process chamber, the second process chamber, and the buffer, wherein the liquid treatment buffer unit has a space in which the substrate is stored. A housing, a support member disposed in the housing to support the substrate, a nozzle for injecting the chemical liquid onto the substrate, and the chemical liquid It includes a discharge line for draining to the outside.

The buffer may further include a standby buffer unit configured to temporarily wait a substrate transferred between the transfer frame and the first and second process chambers, and the standby buffer unit may be disposed to be stacked with the liquid processing buffer unit. The nozzle may spray the chemical liquid in a spray method. The first process chamber may include a spin head for supporting and rotating the substrate and a spray nozzle for spraying the chemical liquid on the substrate in a dropwise manner.

In the substrate processing method, the substrate is first processed in the first process chamber, the substrate is transferred to the second process chamber for second processing, and the second processed substrate is transferred to the standby buffer unit. Including the steps of; When an abnormality occurs in the second process chamber, the substrate, which is first processed between the first processing and the second processing, is transferred to the liquid processing buffer unit to spray the chemical liquid on the substrate. It may include a step.

The chemical liquid is isopropyl alcohol, and the fluid may be carbon dioxide in a supercritical state.

According to the embodiment of the present invention, the efficiency of the substrate processing process can be increased.

According to the embodiment of the present invention, it is possible to prevent the processing of the substrate from being stopped due to the abnormality of the apparatus.

According to the embodiment of the present invention, it is possible to prevent the chemical liquid remaining on the substrate from being naturally dried by the progress of the substrate processing.

According to the embodiment of the present invention, the limited space can be utilized efficiently.

1 is a plan view schematically showing the substrate processing equipment of the present invention.
2 is a cross-sectional view illustrating the buffer of FIG. 1.
3 is a cross-sectional view illustrating another embodiment of the buffer of FIG. 2.
4 is a cross-sectional view illustrating a first substrate processing apparatus for cleaning a substrate in the first process chamber of FIG. 1.
5 is a graph showing the pressure-temperature (PT) diagram of a fluid.
FIG. 6 is a cross-sectional view illustrating a second substrate processing apparatus of the second process chamber of FIG. 1.
FIG. 7 is a flowchart illustrating a path in which a substrate is transferred in the substrate processing facility of FIG. 1.

The embodiments of the present invention can be modified into various forms and the scope of the present invention should not be interpreted as being limited by the embodiments described below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Accordingly, the shapes of the components and the like in the drawings are exaggerated in order to emphasize a clearer description.

Hereinafter, an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 to 7.

1 is a plan view schematically showing a substrate processing apparatus of the present invention. Referring to FIG. 1, the substrate processing facility 1 has an index module 10 and a process processing module 20, and the index module 10 has a load port 120 and a transfer frame 140. The load port 120, the transfer frame 140, and the process module 20 are sequentially arranged in a line. Hereinafter, the direction in which the load port 120, the transfer frame 140, and the process module 20 are arranged is referred to as a first direction 12. When viewed from the top, the direction perpendicular to the first direction 12 is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction. It is called (16).

The carrier 130 in which the substrate W is accommodated is seated in the load port 140. A plurality of load ports 120 are provided, and they are arranged in a line along the second direction 14. In FIG. 1, four load ports 120 are provided. However, the number of load ports 120 may increase or decrease depending on conditions such as process efficiency and footprint of the process module 20. The carrier 130 is formed with a slot (not shown) provided to support the edge of the substrate. A plurality of slots are provided in the third direction 16, and the substrates are positioned in the carrier so as to be stacked in a state spaced apart from each other along the third direction 16. As the carrier 130, a front opening unified pod (FOUP) may be used.

The process module 20 includes a buffer 220, a transfer unit 240, a first process chamber 260, and a second process chamber 280. The transfer part 240 is disposed in parallel to the first direction 12 in the longitudinal direction thereof. Discharge lines 238 and 260 are disposed at one side of the transfer part 240 along the second direction 14, and second process chambers 280 are disposed at the other side of the transfer part 240. The first process chamber 260 and the second process chambers 280 may be provided to be symmetrical with respect to the transfer unit 240. Some of the first process chambers 260 are disposed along the longitudinal direction of the transfer part 240. Further, some of the first process chambers 260 are arranged to be stacked on each other. That is, the first process chambers 260 may be arranged in an array of A X B (A and B are one or more natural numbers) on one side of the transfer unit 240. Where A is the number of the first process chambers 260 provided in a row along the first direction 12 and B is the number of the second process chambers 260 provided in a row along the third direction 16. When four or six first process chambers 260 are provided on one side of the transfer part 240, the discharge lines 238 260 may be arranged in an array of 2 × 2 or 3 × 2. The number of first process chambers 260 may increase or decrease. The second process chambers 280 may also be arranged in an array of M X N (where M and N are each a natural number greater than or equal to one), similar to the first process chambers 260. Here, M and N may be the same number as A and B, respectively. Unlike the above, both the first process chamber 260 and the second process chamber 280 may be provided only on one side of the transfer unit 240. In addition, unlike the above, the first process chamber 260 and the second process chamber 280 may be provided as a single layer on one side and the other side of the transfer unit 240, respectively. Optionally, at one side or the other side of the transfer unit 240, the first process chamber 260 and the second process chamber 280 may be provided to be stacked on each other. In addition, the first process chamber 260 and the second process chamber 280 may be provided in various arrangements different from those described above.

The buffer 220 provides a space for the substrate W to be temporarily transferred between the index module 10 and the process module 20 and between the process chambers 260 and 280. The buffer 22 is disposed between the transfer frame 140 and the transfer unit 240. 2 is a cross-sectional view illustrating the buffer of FIG. 1. Referring to FIG. 2, the buffer 220 has a standby buffer unit 222 and a liquid processing buffer unit 230. The standby buffer unit 222 and the liquid processing buffer unit 230 have different structures from each other. The standby buffer unit 222 temporarily waits the substrate W without supplying liquid. The liquid processing buffer unit 230 supplies the liquid onto the substrate W, and temporarily waits for the substrate W.

The standby buffer unit 222 is provided with a slot 224 in which the substrate W is placed. A plurality of slots 224 are provided to be spaced apart from each other along the third direction 16. In the standby buffer unit 222, a surface facing the transport frame 140 and a surface facing the transport part 240 are opened.

The liquid processing buffer unit 230 has a structure stacked with the standby buffer unit 222. The liquid processing buffer unit 230 may be positioned below the standby buffer unit 222.

The liquid processing buffer unit 230 prevents the pattern surface of the substrate W processed in the first process chamber 260 from being exposed to the atmosphere due to an abnormality of the second process chamber 280. The liquid processing buffer unit 230 maintains the state of the substrate W processed in the first process chamber 260. The liquid treatment buffer unit 230 supplies the chemical liquid of the same type as the chemical liquid finally supplied from the first process chamber 260 to maintain the state of the substrate W. FIG. The liquid treatment buffer unit 230 has a housing 232, a support member 234, a nozzle 236, and a discharge line 238.

The housing 232 provides a space in which the substrate W is held. The housing 232 is provided with a door (not shown) facing one side of the transfer unit 240. The door (not shown) opens and closes the inside of the housing 232. The door (not shown) functions as a doorway through which the substrate W enters and exits.

The support member 234 supports the substrate W carried in the housing 232. Support members 234 are provided on the inner wall of the housing 232 so as to face each other, to support the edge of the substrate. The support member 234 is provided such that its longitudinal direction is directed toward the first direction 12.

Alternatively, the support member 234 may be provided as a rotating plate. In this case, the spinhead can support and rotate the substrate. In addition, the support member 234 of the liquid treatment buffer unit 230 is not limited to the above-described embodiment, it may be provided in a thin plate shape.

The nozzle 236 supplies the liquid onto the substrate supported by the support member 234. The liquid may be an organic solvent. For example, the organic solvent may be isopropyl alcohol (IPA). The nozzle 236 is located at the inner top of the housing 232. The nozzle 236 is disposed to face the center portion of the upper surface of the substrate W supported by the support member 234. The nozzle 236 sprays the organic solvent in a spray method. According to an example, the nozzle 236 sprays the organic solvent in a spray manner such that the organic solvent is supplied to the entire area of the substrate W. FIG.

The nozzle 236 may be provided in one or in plurality. In addition, when the support member 234 is provided as a spin head, the nozzle 236 may spray the organic solvent in a dropping manner.

The discharge line 238 is provided at the bottom of the housing 232. The discharge line 238 drains the used organic solvent. The discharge line 238 is supplied to the substrate W, and then drains the organic solvent flowing down to the bottom of the housing 232 to the outside of the housing 232.

Unlike the above-described embodiment, a plurality of liquid processing buffer units 230a and 230b of the buffer 220 of FIG. 3 may be provided. Each of the liquid treatment buffer units 230a and 230b may be provided in a stacked structure. As a result, even if an abnormality occurs in the plurality of second process chambers 280, the plurality of substrates W subjected to the second drying process are loaded into the liquid treatment buffer units 230a and 230b, respectively, to form an organic solvent. Natural drying can be prevented.

In addition, the positions of the standby buffer unit 222 and the liquid processing buffer unit 230 may be changed from each other.

In addition, the buffer 220 may include only the liquid processing buffer unit 230 without the standby buffer unit 222.

The transfer frame 140 transports the substrate W between the carrier 130 seated on the load port 120 and the standby buffer unit 222. The transfer frame 140 is provided with an index rail 142 and an index robot 144. The index rail 142 is provided so that its longitudinal direction is parallel to the second direction 14. The index robot 144 is installed on the index rail 142 and is linearly moved along the index rail 142 in the second direction 14. The index robot 144 has a base 144a, a body 144b, and an index arm 144c. The base 144a is installed so as to be movable along the index rail 142. The body 144b is coupled to the base 144a. The body 144b is provided to be movable along the third direction 16 on the base 144a. Also, the body 144b is provided to be rotatable on the base 144a. The index arm 144c is coupled to the body 144b and is provided to be movable forward and backward relative to the body 144b. A plurality of index arms 144c are provided and each is provided to be individually driven. The index arms 144c are stacked to be spaced apart from each other along the third direction 16. Some of the index arms 144c are used to convey the substrate W from the process processing module 20 to the carrier 130, and others are used to convey the substrate W from the carrier 130 to the process processing module 20. It can be used when conveying. This can prevent the particles generated from the substrate W before the process processing from adhering to the substrate W after the process processing in the process of loading and unloading the substrate W by the index robot 144. [

Referring back to FIG. 1, the transfer unit 240 transports the substrate W between the buffer 220, the first process chamber 260, and the second process chamber 280. The transfer unit 240 is provided with a guide rail 242 and the main robot 244. The guide rails 242 are arranged so that their longitudinal directions are parallel to the first direction 12. The main robot 244 is installed on the guide rails 242 and is linearly moved along the first direction 12 on the guide rails 242. The main robot 244 has a base 244a, a body 244b, and a main arm 244c. The base 244a is installed so as to be movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is provided to be movable along the third direction 16 on the base 244a. Body 244b is also provided to be rotatable on base 244a. The main arm 244c is coupled to the body 244b, which is provided for forward and backward movement relative to the body 244b. A plurality of main arms 244c are provided and each is provided to be individually driven. The main arms 244c are stacked in a state of being spaced from each other along the third direction 16. Used to transport the substrate W from the buffer to the standby buffer unit 222 from the main arm 244c and the process chambers 260 and 280 used to convey the substrate W to the process chambers 260 and 280. The main arms 244c may be different from each other. In addition, the substrate is transferred from the first process chamber 260 to the second process chamber 280 to the standby buffer unit 222 in the main arm 244c and the second process chamber 280. The main arms 244c used when conveying may be different from each other.

The first process chamber 260 and the second process chamber 280 may be provided to perform a process on one substrate W sequentially. For example, the substrate W may be subjected to a chemical treatment process, a rinse process, and a first drying process in the first process chamber 260, and a second drying process may be performed in the second process chamber 260.

Hereinafter, the first substrate processing apparatus 300 provided in the first process chamber 260 will be described. 4 is a cross-sectional view illustrating a first substrate processing apparatus 300 for cleaning a substrate W in the first process chamber 260 of FIG. 1. Referring to FIG. 2, the first substrate processing apparatus 300 includes a housing 320, a spin head 340, a lifting unit 360, and an injection unit 380. The housing 320 provides a space in which a substrate treatment process is performed, and an upper portion thereof is opened. The housing 320 has an inner recovery cylinder 322, an intermediate recovery cylinder 324, and an outer recovery cylinder 326. Each recovery container 322, 324, 326 recovers different chemical liquids from among the chemical liquids used in the process. The inner recovery container 322 is provided in an annular ring shape surrounding the spin head 340, and the intermediate recovery container 324 is provided in an annular ring shape surrounding the inner recovery container 322, and the outer recovery container 326. ) Is provided in an annular ring shape surrounding the intermediate collection vessel 324. Inner space 322a of the inner recovery container 322, space 324a between the inner recovery container 322 and the intermediate recovery container 324 and the space between the intermediate recovery container 324 and the external recovery container 326 ( 326a may serve as an inlet through which the chemical liquid flows into the inner recovery container 322, the intermediate recovery container 324, and the external recovery container 326, respectively. Each recovery container 322, 324, 326 is connected to the recovery line (322b, 324b, 326b extending vertically in the bottom direction). Each recovery line 322b, 324b, 326b discharges the chemical liquid introduced through each recovery container 322, 324, 326. The discharged chemical liquid may be reused through an external chemical liquid regeneration system (not shown).

The spin head 340 is disposed within the housing 320. The spin head 340 supports the substrate W and rotates the substrate W during the process. The spin head 340 has a body 342, a support pin 334, a chuck pin 346, and a support shaft 348. The body 342 has a top surface that is generally circular when viewed from the top. A support shaft 348 rotatable by a motor 349 is fixedly coupled to the bottom surface of the body 342. A plurality of support pins 334 are provided. The support pin 334 is spaced apart from the edge of the upper surface of the body 342 by a predetermined distance and protrudes upward from the body 342. The support pins 334 are arranged so as to have a generally annular ring shape in combination with each other. The support pins 334 support the rear edge of the substrate such that the substrate W is spaced apart from the upper surface of the body 342 by a certain distance. A plurality of the chuck pins 346 are provided. The chuck pin 346 is disposed farther away from the center of the body 342 than the support pin 334. The chuck pin 346 is provided to protrude upward from the body 342. The chuck pin 346 supports the side of the substrate W so that the substrate W is not laterally displaced in place when the spin head 340 is rotated. The chuck pin 346 is provided so as to be linearly movable between a standby position and a supporting position along the radial direction of the body 342. The standby position is a distance from the center of the body 342 relative to the support position. When the substrate W is loaded or unloaded onto the spin head 340, the chuck pin 346 is positioned at the standby position and the chuck pin 346 is positioned at the support position when the substrate W is being processed. At the support position, the chuck pin 346 contacts the side of the substrate W.

The lifting unit 360 linearly moves the housing 320 in the vertical direction. The relative height of the housing 320 with respect to the spin head 340 is changed as the housing 320 is moved up and down. The lifting unit 360 has a bracket 362, a moving shaft 364, and a driver 366. The bracket 362 is fixedly installed on the outer wall of the housing 320, and the movement shaft 364 which is moved in the vertical direction by the driver 366 is fixedly coupled to the bracket 362. The housing 320 is lowered so that the spin head 340 protrudes above the housing 320 when the substrate W is placed on the spin head 340 or lifted from the spin head 340. In addition, the height of the housing 320 may be adjusted so that the chemical solution may flow into the predetermined recovery container 360 according to the type of the chemical solution supplied to the substrate W when the process is performed. For example, while the substrate W is being treated with the first chemical liquid, the substrate W is positioned at a height corresponding to the inner space 322a of the inner recovery container 322. In addition, during the treatment of the substrate W with the second chemical liquid and the third chemical liquid, the substrate W may have a space 324a between the internal recovery container 322 and the intermediate recovery container 324, and the intermediate recovery container ( It may be located at a height corresponding to the space 326a between the 324 and the outer collection container 326. The elevation unit 360 can move the spin head 340 in the vertical direction instead of the housing 320. [

The injection unit 380 supplies the chemical liquid to the substrate W during the substrate treating process. The injection unit 380 has a nozzle support 382, an injection nozzle 384, a support shaft 386, and a driver 388. The support shaft 386 has a longitudinal direction along the third direction 16, and a driver 388 is coupled to a lower end of the support shaft 386. The driver 388 rotates and lifts the support shaft 386. The nozzle support 382 is vertically coupled with the opposite end of the support shaft 386 coupled with the driver 388. The spray nozzle 384 is provided at the bottom end of the nozzle support 382. The spray nozzle 384 is moved by the driver 388 to the process position and the standby position. The process position is where the spray nozzle 384 is disposed vertically above the housing 320, and the standby position is where the spray nozzle 384 deviates from the vertical upper portion of the housing 320. The injection unit 380 may be provided with one or a plurality. When a plurality of injection units 380 are provided, the chemical, the rinse liquid, or the organic solvent may be provided through different injection units 380. The rinse liquid may be pure and the organic solvent may be a mixture of isopropyl alcohol vapor and inert gas or isopropyl alcohol liquid.

Next, the second substrate processing apparatus 400 provided in the second process chamber 280 will be described in detail. 5 is a graph showing the pressure-temperature (PT) diagram of a fluid. Referring to FIG. 5, the supercritical fluid is a fluid in a region above the critical temperature Tc and the critical pressure Pc. Supercritical fluids have a dissolving power close to liquid, but tension and viscosity are close to gas. Since the supercritical fluid does not form an interface between the gas and the liquid, the surface tension is almost zero.

6 is a cross-sectional view schematically illustrating a second substrate processing apparatus of the second process chamber of FIG. 1. The second substrate processing apparatus 400 is provided inside the second process chamber 280. Referring to FIG. 4, the second substrate processing apparatus 400 dries the substrate W using a fluid in a supercritical state. For example, the fluid may be carbon dioxide (CO 2 ). The second substrate processing apparatus 400 has chambers 440a and 440b, a heater 442, and a substrate support member 444.

Chambers 440a and 440b have an upper chamber 440a and a lower chamber 440b. The upper chamber 440a and the lower chamber 440b are combined with each other to form a space therein, and are sealed from the outside. The upper chamber 440a and the lower chamber 440b are made of a material that can sufficiently withstand high pressure. The pressure in the internal space formed by the upper chamber 440a and the lower chamber 440b is maintained above the critical pressure of carbon dioxide. In one example, the pressure in the interior space may be between about 100 bar and 150 bar. The upper chamber 440a and the lower chamber 440b repeatedly control supply and exhaust of carbon dioxide in a supercritical state to adjust the internal pressure thereof. Heaters 442 are provided inside the chambers 440a and 440b. The heater 442 heats the interior of the chambers 440a and 440b above the critical temperature of carbon dioxide. The substrate support member 444 is fixedly installed in the lower chamber 440b. The substrate support member 444 fixes the substrate W. As shown in FIG. The supercritical carbon dioxide supplied through the heating member 430 is supplied therein through the upper chamber 440a and the lower chamber 440b, respectively.

Next, the process of cleaning and drying the substrate W by the substrate processing equipment 1 of FIG. 1 will be described in sequence. A FOUP in which a plurality of substrates W are accommodated is seated in the load port 120. The index robot 144 transports the substrate W stored in the FOUP to the standby buffer unit 222. The main robot 244 transfers the substrate W loaded in the standby buffer unit 222 to the first process chamber. When the substrate W is loaded into the spin head 342 disposed in the process chamber 260, the housing 320 is adjusted in height such that the inlet 322a of the inner recovery container 322 corresponds to the substrate W. . When the primary cleaning process is performed, the spin head 342 is rotated, and the spray nozzle 384 for supplying the chemical is positioned above the central region of the substrate W, which is a process position. The spray nozzle 384 sprays the chemical onto the substrate W. When the first cleaning process is completed, the spray nozzle 384 used in the first cleaning process is moved to the standby position, and the second cleaning process is performed. The housing 320 is adjusted in height such that the inlet 324a of the intermediate recovery container 324 corresponds to the substrate (W). The spray nozzle (not shown) for supplying the rinse liquid supplies the rinse liquid onto the substrate W to secondly clean the substrate W. After the secondary washing process is completed, the primary drying process is performed. The height of the housing 320 is adjusted so that the inlet 326a of the outer recovery container 326 corresponds to the substrate W, and the spray nozzle (not shown) for supplying the organic solvent is moved to a process position. An injection nozzle (not shown) sprays an organic solvent onto the substrate W to first dry the substrate W. When the primary drying process is completed, the substrate W is unloaded by the main robot 244. The main robot 244 transfers the substrate W to the second process chamber 280 for the second drying process. In this case, the substrate W may be transferred to the liquid processing buffer unit 230 or the second process chamber 280 according to the state of the second process chamber 280.

FIG. 7 is a flowchart illustrating a path in which a substrate is transferred in the substrate processing facility of FIG. 1. When there is no abnormality in the second process chamber 280, the substrate W is transferred to the second process chamber 280, and the second drying process is performed. When the secondary drying process is completed, the main robot 244 unloads the substrate W and transfers it to the standby buffer unit 222. The index robot 144 transfers the substrate W loaded in the standby buffer unit 222 to the FOUP.

On the contrary, when an abnormality occurs in the second process chamber 280, the main robot 244 transfers the substrate W to the liquid treatment buffer unit 230. When the substrate W is loaded into the liquid treatment buffer unit 230, the nozzle 236 sprays the organic solvent onto the substrate W. The nozzle 236 sprays the organic solvent until the abnormality is resolved in the second process chamber 280. The nozzle 236 continuously sprays the organic solvent so that the organic solvent remaining on the substrate W does not naturally dry. When the abnormality is solved in the second process chamber 280, the main robot 244 transfers the substrate W to the second process chamber 280 for the second drying process.

220: buffer 222: standby buffer unit
230: liquid processing buffer unit 232: housing
236: nozzle 234: support member
238: discharge line 260: first process chamber
280: second process chamber

Claims (2)

A standby buffer unit for temporarily waiting the substrate;
A liquid processing buffer unit for supplying a chemical liquid to the substrate and temporarily waiting the substrate;
The standby buffer unit and the liquid processing buffer unit have a different structure from each other,
The liquid processing buffer unit,
A housing providing a space in which the substrate is stored;
A support member disposed in the housing to support a substrate;
A nozzle for injecting the chemical liquid onto a substrate; And
And a discharge line for draining the chemical liquid to the outside of the housing. The method of claim 1,
And the standby buffer unit and the liquid processing buffer unit are stacked on each other.
KR1020110118421A 2011-11-14 2011-11-14 Method for treating substrate KR101979604B1 (en)

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KR20130052997A true KR20130052997A (en) 2013-05-23
KR101979604B1 KR101979604B1 (en) 2019-08-29

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150144449A (en) * 2014-06-16 2015-12-28 세메스 주식회사 Apparatus treating a substrate and method cleaning the apparatus
KR20180014329A (en) * 2016-07-29 2018-02-08 세메스 주식회사 Substrate treating apparatus and substrate treating method
KR20190039492A (en) * 2019-04-05 2019-04-12 세메스 주식회사 A apparatus for treating substrate, and the apparatus set up method
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