KR20140084733A - Apparatus and method fdr treating substrates - Google Patents

Abstract

The present invention relates to an apparatus and a method of manufacturing a semiconductor substrate and, more specifically, to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus according to an embodiment of the present invention comprises: a chemical agent treating chamber providing a chemical agent treating space therein; a substrate cleaning unit which is located inside the chemical agent treating chamber and treats the substrate with a chemical agent; a drying chamber providing a drying space therein; a substrate drying unit which is located inside the drying chamber and dries the substrate; and a transfer unit which transfers the substrate between the chemical agent treating chamber and the drying chamber. The substrate cleaning unit includes a spin chuck for supporting the substrate and a first agent supply member for supplying a treating agent to the substrate supported by the spin chuck. The substrate drying unit includes a substrate supporting member for supporting the substrate, a rotating member for rotating the substrate and a heating member for heating the substrate.

Description

[0001] APPARATUS AND METHOD FDR TREATING SUBSTRATES [0002]

The present invention relates to an apparatus and a method for manufacturing a semiconductor substrate, and more particularly, to an apparatus and a method for processing a substrate.

Generally, a semiconductor device is formed through various processes such as a photo process, an etching process, an ion implantation process, and a deposition process for a substrate such as a silicon wafer .

In the course of performing each process, a cleaning process is performed to remove various contaminants adhering to the substrate. The cleaning process includes a chemical treatment process for removing contaminants on a substrate by a chemical, a wet cleaning process for removing a chemical solution remaining on the substrate by pure water, And a drying process for drying the pure water remaining on the surface.

Of these, the drying process is performed by supplying nitrogen gas onto the substrate where pure water remains. However, as the line width of the pattern formed on the substrate is narrowed and the aspect ratio is increased, the removal of pure water between the patterns is not performed well. In recent years, pure water is replaced on a substrate with a liquid organic solvent such as isopropyl alcohol, which is volatile and has a lower surface tension than pure water, and then the substrate is dried by supplying heated nitrogen gas.

Despite such a method, there is a problem that patterning of the pattern surface of the substrate is not performed uniformly, resulting in leaning of the pattern.

An object of the present invention is to provide a substrate processing apparatus and method capable of uniformly drying a substrate.

It is another object of the present invention to provide a substrate processing apparatus and method capable of preventing a lining phenomenon of a substrate pattern.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the description and the accompanying drawings will be.

The present invention provides a substrate processing apparatus.

A substrate processing apparatus according to an embodiment of the present invention includes a liquid processing chamber for providing a liquid processing space therein, a substrate cleaning unit located inside the liquid processing chamber for performing liquid processing of the substrate, a drying chamber , A substrate drying unit positioned inside the drying chamber for drying the substrate, and a transfer unit for transferring the substrate between the liquid processing chamber and the drying chamber, wherein the substrate cleaning unit comprises a spin chuck for supporting the substrate, And a first fluid supply member for supplying the processing liquid to the substrate supported by the spin chuck, wherein the substrate drying unit includes a substrate supporting member on which the substrate is supported, a rotating member for rotating the substrate, And a heating member.

The heating member may be located inside the substrate support member.

The substrate drying unit may further include a heating plate positioned at an upper end of the substrate supporting member and having thermal conductivity higher than that of the substrate supporting member.

The first fluid supply unit may supply a cleaning liquid and an organic solvent to the substrate, and the substrate drying unit may further include a second fluid supply member supplying the organic solvent to the substrate.

In addition, a substrate processing apparatus according to another embodiment of the present invention includes a processing chamber having a processing space therein, a substrate cleaning unit located inside the processing chamber for processing and drying the substrate, Wherein the substrate cleaning unit includes a spin chuck for supporting the substrate, a rotating member for rotating the substrate, a heating member for heating the substrate, and a fluid for supplying the processing solution to the substrate supported by the spin chuck, And a supply member.

The heating member may be located inside the spin chuck.

The substrate cleaning unit may further include a heating plate positioned at an upper end of the spin chuck and having thermal conductivity higher than that of the spin chuck.

The present invention also provides a substrate processing method.

A substrate processing method according to an embodiment of the present invention includes a liquid processing step in which a substrate is subjected to liquid processing and a drying step in which the substrate is dried, the drying step including a rotating step of rotating the substrate and a heating step .

The liquid processing step and the drying step may be performed in different process chambers, and the substrate processing method may further include a transporting step of transporting the substrate between the processing chambers.

The liquid processing step may include a step of supplying a cleaning liquid to the substrate to clean the substrate, and a step of supplying an organic solvent to the cleaned substrate, wherein the drying step includes supplying the organic solvent to the substrate .

The liquid processing step and the drying step may be provided in the same process chamber.

According to the present invention, the substrate processing step can be improved by uniformly drying the substrate.

Further, according to the present invention, the lining phenomenon of the substrate pattern can be prevented, and the reliability of the substrate processing process can be improved.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is a plan view showing an embodiment of a substrate processing apparatus.
2 is a cross-sectional view showing the substrate cleaning unit of FIG.
FIG. 3 is a view showing a first embodiment of the substrate drying unit of FIG. 1; FIG.
FIG. 4 is a view showing another embodiment of the substrate supporting member of FIG. 3. FIG.
Fig. 5 is a view showing a second embodiment of the substrate drying unit of Fig. 1. Fig.
6 is a plan view showing another embodiment of the substrate processing apparatus
7 is a view showing the substrate cleaning unit of Fig.
8 is a flowchart showing an embodiment of a substrate processing method using the substrate processing apparatus of FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

1 is a plan view showing an embodiment of a substrate processing apparatus.

1, the substrate processing apparatus 1a has an index module 10 and a processing module 20, and the index module 10 has a load port 120 and a transfer frame 140. [ The load port 120, the transfer frame 140, and the process module 20 are sequentially arranged in a line. The direction in which the load port 120, the transfer frame 140 and the process module 20 are arranged is referred to as a first direction 91 and a direction perpendicular to the first direction 91 Direction is referred to as a second direction 92 and a direction perpendicular to the plane including the first direction 91 and the second direction 92 is referred to as a third direction 93. [

The carrier 18 in which the substrate is housed is seated in the load port 140. A plurality of load ports 120 are provided and they are arranged in a line along the second direction 92. The number of load ports 120 may increase or decrease depending on the process efficiency and footprint conditions of the process module 20 and the like. The carrier 18 is formed with a plurality of slots for accommodating the substrates horizontally arranged with respect to the paper surface. As the carrier 18, a front opening unified pod (FOUP) may be used.

Process processing module 20 has a transfer chamber 240, a buffer unit 220, and process chambers 260 and 280. The process chamber includes a liquid processing chamber 260 and a drying chamber 280. The transfer chamber 240 is disposed such that its longitudinal direction is parallel to the first direction 91. On both sides of the transfer chamber 240, a liquid processing chamber 260 and a drying chamber 280 are disposed. The liquid processing chamber 260 and the drying chamber 280 at one side and the other side of the transfer chamber 240 may be provided so as to be symmetrical with respect to each other with respect to the transfer chamber 240. A plurality of liquid processing chambers 260 are provided on one side of the transfer chamber 240. Some of the liquid processing chambers 260 are disposed along the longitudinal direction of the transfer chamber 240. In addition, some of the liquid processing chambers 260 are arranged to be stacked on each other. That is, at one side of the transfer chamber 240, the liquid processing chambers 260 may be arranged in an array of A X B. Where A is the number of liquid processing chambers 260 provided in a row along the first direction 91 and B is the number of liquid processing chambers 260 provided in a row along the third direction 93. When four or six liquid processing chambers 260 are provided on one side of the transfer chamber 240, the liquid processing chambers 260 may be arranged in an array of 2 X 2 or 3 X 2. The number of the liquid processing chambers 260 may increase or decrease. The drying chambers 280 may also be arranged in an array of M X N (where M and N are natural numbers of 1 or more, respectively) similar to the liquid processing chambers 260. Here, M and N may be the same numbers as A and B, respectively. Unlike the above, both the liquid processing chamber 260 and the drying chamber 280 may be provided only on one side of the transfer chamber 240. In addition, unlike the above, the liquid processing chamber 260 and the drying chamber 280 may be provided as a single layer on one side and the other side of the transfer chamber 240, respectively. Alternatively, the liquid processing chamber 260 and the drying chamber 280 on one side or the other side of the transfer chamber 240 may be provided to be laminated with each other. In addition, the liquid processing chamber 260 and the drying chamber 280 may be provided in various arrangements different from those described above.

The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides a space for the substrate to remain before the substrate is transported between the process chambers 260 and 280 and the carrier 18. The buffer unit 220 is provided with a slot in which the substrate lies, and the slots are provided in a plurality so as to be spaced apart from each other in the third direction 93. The buffer unit 220 is opened on the side facing the transfer frame 140 and on the side facing the transfer chamber 240.

The transfer frame 140 carries the substrate between the buffer unit 220 and the carrier 18 that is seated on the load port 120. The transfer frame 140 is provided with an index rail 142 and an index robot 144. The index rail 142 is provided so that its longitudinal direction is parallel to the second direction 92. The index robot 144 is installed on the index rail 142 and is linearly moved along the index rail 142 in the second direction 92. The index robot 144 has a base 144a, a body 144b, and an index arm 144c. The base 144a is installed so as to be movable along the index rail 142. The body 144b is coupled to the base 144a. The body 144b is provided to be movable along the third direction 93 on the base 144a. Also, the body 144b is provided to be rotatable on the base 144a. The index arm 144c is coupled to the body 144b, which is provided to be movable forward and backward relative to the body 144b. A plurality of index arms 144c are provided and each is provided to be individually driven. The index arms 144c are arranged so as to be stacked apart from each other along the third direction 93. [ Some of the index arms 144c are used when transporting the substrate from the processing module 20 to the carrier 18 and another portion of which is used when transporting the substrate from the carrier 18 to the processing module 20. [ . This can prevent particles generated from the substrate before the process process from adhering to the substrate after the process process in the process of loading and unloading the substrate by the index robot 144.

The transfer chamber 240 transfers the substrate W between the buffer unit 220 and the liquid processing chamber 260 or the drying chamber 280 and between the liquid processing chamber 260 and the drying chamber 280. The transfer chamber 240 is provided with a guide rail 242 and a transfer unit 500. The guide rails 242 are arranged so that their longitudinal directions are parallel to the first direction 91. [ The transport unit 500 is installed on the guide rail 242, which is linearly moved along the first direction 91 on the guide rail 242. The transfer unit 500 has a base 530, a body 520, and a main arm 510. The base 530 is installed to be movable along the guide rail 242. The body 520 is coupled to the base 530. The body 520 is provided to be movable along the third direction 93 on the base 530. Also, the body 520 is provided to be rotatable on the base 530. The main arm 510 is coupled to the body 520, which is provided to be movable forward and backward relative to the body 520. A plurality of main arms 510 are provided so as to be individually driven. The main arms 510 are arranged to be stacked in a state of being spaced from each other along the third direction 93.

In the liquid processing chamber 260, a substrate cleaning unit 300 for performing a liquid processing process on the substrate is provided. In the drying chamber 280, a substrate drying unit 400 for performing a drying process on the substrate is provided. The substrate cleaning unit 300 and the substrate drying unit 400 may have different structures depending on the type of the cleaning process to be performed. Alternatively, the substrate cleaning unit 300 and the substrate drying unit 400 in the respective chambers 260 and 280 may have the same structure. The chambers 260 and 280 may be divided into a plurality of groups such that the substrate cleaning units 300 in the chambers 260 and 280 belonging to the same group are identical to one another and in the chambers 260 and 2850 belonging to different groups The structure of the substrate drying unit 400 may be provided differently from each other. For example, when the chambers 260 and 280 are divided into two groups, liquid processing chambers 260 are provided on one side of the transfer chamber 240 and drying chambers 280 are provided on the other side of the transfer chamber 240 . Optionally, liquid processing chambers 260 may be provided on the lower layer on either side of the transfer chamber 240, and drying chambers 280 may be provided on the upper layer. The liquid processing chamber 260 and the drying chamber 280 can be classified according to the type of the chemical used and the type of the cleaning method. Alternatively, the liquid processing chamber 260 and the drying chamber 280 may be provided to perform a process on one substrate W sequentially.

An example of a substrate processing apparatus for cleaning a substrate using a process liquid will be described below.

2 is a cross-sectional view showing the substrate cleaning unit of FIG.

2, the substrate cleaning unit 300 has a liquid processing housing (not shown), a container 320, a spin chuck 340, a lift unit 360, and a first fluid supply member 380. The substrate cleaning unit 300 is located inside the liquid processing chamber 260.

The liquid processing housing (not shown) provides a liquid processing space inside the liquid processing chamber 260.

The container 320 is located inside the liquid processing housing (not shown). The container 320 provides a space in which the substrate cleaning process is performed, and the upper portion thereof is opened. The container 320 has an inner recovery cylinder 322, an intermediate recovery cylinder 324, and an outer recovery cylinder 326. Each of the recovery cylinders 322, 324, and 326 recovers the different treatment liquids among the treatment liquids used in the process. The inner recovery vessel 322 is provided in the form of an annular ring surrounding the spin chuck 340. The intermediate recovery vessel 324 is provided in the shape of an annular ring surrounding the inner recovery vessel 322 and the outer recovery vessel 326 Is provided in the shape of an annular ring surrounding the intermediate recovery bottle 324. The inner space 322a of the inner recovery cylinder 322 and the space 324a between the inner recovery cylinder 322 and the intermediate recovery cylinder 324 and the space 324 between the intermediate recovery cylinder 324 and the outer recovery cylinder 326 326a function as an inlet through which the processing liquid flows into the inner recovery cylinder 322, the intermediate recovery cylinder 324, and the outer recovery cylinder 326, respectively. The recovery lines 322b, 324b, and 326b extending vertically downward from the bottom of the recovery tanks 322, 324, and 326 are connected to the recovery tanks 322, 324, and 326, respectively. Each of the recovery lines 322b, 324b, and 326b discharges the processing liquid that has flowed through the respective recovery cylinders 322, 324, and 326. The discharged treatment liquid can be reused through an external treatment liquid recovery system (not shown).

The spin chuck 340 is disposed in the container 320. The spin chuck 340 supports the substrate W and rotates the substrate W during the process. The spin chuck 340 has a body 342, a support pin 344, a chucking pin 346, and a support shaft 348. The body 342 has a top surface that is generally circular when viewed from the top. A support shaft 348 rotatable by a motor 349 is fixedly coupled to the bottom surface of the body 342. A plurality of support pins 344 are provided. The support pins 344 are spaced apart from the edge of the upper surface of the body 342 and protrude upward from the body 342. The support pins 344 are arranged so as to have a generally annular ring shape in combination with each other. The support pins 344 support the rear edge of the substrate such that the substrate W is spaced from the upper surface of the body 342 by a certain distance. A plurality of chucking pins 346 are provided. The chucking pin 346 is disposed farther away from the center of the body 342 than the support pin 344. The chucking pin 346 is provided to protrude upwardly from the body 342. The chucking pin 346 supports the side of the substrate W so that the substrate W is not laterally displaced in place when the spin chuck 340 is rotated. The chucking pin 346 is provided so as to be linearly movable between the standby position and the support position along the radial direction of the body 342. The standby position is a distance from the center of the body 342 relative to the support position. When the substrate W is loaded or unloaded onto the spin chuck 340, the chucking pin 346 is positioned in the standby position and the chucking pin 346 is positioned in the supporting position when the substrate W is being processed . At the support position, the chucking pin 346 contacts the side of the substrate W. [ Since the spin chuck 340 is in contact with various kinds of processing solutions for processing the substrate, it can be provided with a material excellent in chemical resistance. According to an example, the spin chuck 340 may be made of a Teflon material.

The lifting unit 360 moves the container 320 in the vertical direction. As the container 320 is moved up and down, the relative height of the container 320 to the spin chuck 340 is changed. The lifting unit 360 has a bracket 362, a moving shaft 364, and a driver 366. The bracket 362 is fixed to the outer wall of the container 320 and the bracket 362 is fixedly coupled to the moving shaft 364 which is moved in the vertical direction by the actuator 366. The container 320 is lowered so that the spin chuck 340 protrudes to the upper portion of the container 320 when the substrate W is placed on the spin chuck 340 or lifted from the spin chuck 340. When the process is performed, the height of the container 320 is adjusted so that the process liquid may flow into the predetermined collection container 360 according to the type of the process liquid supplied to the substrate W. For example, while processing the substrate W with the first processing solution, the substrate W is positioned at a height corresponding to the inner space 322a of the inner recovery cylinder 322. [ During the processing of the substrate W with the second processing solution and the third processing solution, the substrate W is separated into the space 324a between the inner recovery tube 322 and the intermediate recovery tube 324, And may be located at a height corresponding to the space 326a between the cylinder 324 and the outer recovery cylinder 326. [ The lift unit 360 can move the spin chuck 340 in the vertical direction instead of the container 320 as described above.

The first fluid supply member 380 supplies the treatment liquid to the substrate W during the substrate cleaning process. The first fluid supply member 380 has a nozzle support 382, a nozzle 384, a support shaft 386, and a driver 388. The support shaft 386 is provided along its lengthwise direction in the third direction 93 and a driver 388 is coupled to the lower end of the support shaft 386. The driver 388 rotates and lifts the support shaft 386. The nozzle support 382 is coupled perpendicular to the opposite end of the support shaft 386 coupled to the driver 388. The nozzle 384 is installed at the bottom end of the nozzle support 382. The nozzle 384 is moved by a driver 388 to a process position and a standby position. The process position is that the nozzle 384 is located at the vertically upper portion of the container 320 and the standby position is the position at which the nozzle 384 is away from the vertical upper portion of the container 320. One or more first fluid supply members 380 may be provided. When a plurality of first fluid supply members 380 are provided, the chemical, rinsing liquid, or organic solvent may be provided through the first fluid supply member 380, which are different from each other. The chemical may be an etchant including hydrofluoric acid, nitric acid, sulfuric acid or ammonium, the rinsing liquid may be pure, and the organic solvent may be a mixture of an isopropyl alcohol vapor and an inert gas or may be an isopropyl alcohol solution.

FIG. 3 is a view showing a first embodiment of the substrate drying unit of FIG. 1; FIG.

3, the substrate drying unit 4000 includes a drying housing 4010, a substrate supporting member 4030, a heating member 4040, a rotating member 4050, a purge gas supplying member 4060, and an exhausting member 4070 ). The substrate drying unit 4000 is located inside the drying chamber 280. The substrate drying unit 4000 heats and dries the substrate W conveyed into the drying chamber 280.

The drying housing 4010 provides space for the substrate drying unit 4000 to dry the substrate W. [ The drying housing 4010 comprises an upper housing 4011 and a lower housing 4012. When the upper housing 4011 rises and the drying housing 4010 is opened, the substrate W is transported into the drying housing 4010. When the substrate W is moved into the dry housing 4010, the upper housing 4011 is lowered to close the dry housing 4010. Alternatively, the lower housing 4012 may be lowered to open the drying housing 4010, and the lower housing 4012 may be lifted to close the drying housing 4010.

The substrate supporting member 4030 is located inside the drying housing 4010 and the substrate W conveyed into the drying housing 4010 is supported. The upper surface of the substrate supporting member 4030 may be provided to be in contact with the lower surface of the substrate W. [ Therefore, the cross sectional area of the substrate supporting member 4030 may be larger than the cross sectional area of the substrate W. [ The upper surface of the substrate supporting member 4030 may be provided with a material having excellent heat resistance so that the substrate supporting member 4030 is not damaged when the substrate W is heated. According to one example, the upper surface of the substrate supporting member 4030 can be provided with a steel material excellent in heat resistance.

The substrate supporting member 4030 includes a rotating member 4050. [ The rotating member 4050 is composed of a drive shaft 4051 and a motor 4052. [ The drive shaft 4051 contacts the lower surface of the substrate support member 4030 and transfers the rotational force generated by the motor 4052 to the substrate support member 4030. [ Although not shown, the substrate support member 4030 may include a guide pin (not shown). A guide pin (not shown) serves to fix the rotating substrate W. Alternatively, the rotating member 4050 may not be provided.

The heating member 4040 is provided in the substrate supporting member 4030 to heat the substrate W. [ According to one example, the heating member 4040 may include a hot wire provided inside the substrate support member 4030 in the form of a coil. The heating member 4040 directly heats the substrate W. Since the substrate W is heated by the heating member 4040 provided at uniform intervals, all regions of the substrate W are heated to a uniform temperature. According to another example, the heating member 4040 may be provided with a lamp. The lamp may be provided inside the substrate support member 4030. [ The lamp may be provided to heat the bottom surface of the substrate W.

FIG. 4 is a view showing another embodiment of the substrate supporting member of FIG. 3. FIG.

Referring to FIG. 4, the substrate supporting member 4130 includes a rotating member 4150, a heating member 4140, and a heating plate 4180. The substrate support member 4130 further includes a heating plate 4180 as compared to the substrate support member 430 of FIG. The substrate support member 4130 has the same configuration and function as the substrate support member 430 of FIG. 4 except for the heating plate 4180. Hereinafter, the same parts as those of the substrate supporting member 430 of FIG. 4 will be described, and the heating plate 4180 will be described.

The heating plate 4180 is located at the top of the substrate supporting member 4130. The heating plate 4180 is located above the heating member 1040. The heating plate 4180 may be provided so as to have the same cross sectional area as that of the substrate supporting member 1030. According to one example, the heating plate 4180 may be provided with a material having thermal conductivity higher than that of the substrate supporting member 4130. The heating plate 4180 is heated from the heating member 4140 and the heating plate 4180 heats the substrate W. [

Referring again to Figure 3, the purge gas supply member 4060 supplies purge gas into the dry housing 4010. The purge gas supply member 4060 includes an inlet port 4061, a supply line 4062, and a storage tank 4063. The purge gas supplying member 4060 may be connected to the upper surface of the drying housing 4010. The purge gas stored in the storage tank 4063 flows into the drying housing 4010 through the supply line 4062. [ As the purge gas, an inert gas such as nitrogen gas may be used. The purge gas evacuates the external gas, the vaporized process liquid and the fume that have flowed into the dry housing 4010 when the dry housing 4010 is opened and closed in the dry housing 4010.

The exhaust member 4070 exhausts the fluid inside the drying housing 4010 to the outside. The exhaust member 4070 includes an exhaust port 4071 and an exhaust line 4072. According to one example, the exhaust member 4070 may be provided in connection with the bottom surface of the drying housing 4010.

Fig. 5 is a view showing a second embodiment of the substrate drying unit of Fig. 1. Fig.

5, the substrate drying unit 4200 includes a drying housing 4210, a substrate supporting member 4230, a heating member 4240, a rotating member 4250, a purge gas supplying member 4260, an exhaust member 4270 ) And a second fluid supply member (4290).

The substrate drying unit 4200 further includes a second fluid supply member 4290 as compared to the substrate drying unit 4000 of Fig. The drying housing 4210, the substrate supporting member 4230, the heating member 4240, the rotating member 4250, the purge gas supplying member 4260 and the discharging member 4270 are the same as the substrate drying unit 4000 of FIG. And therefore, a description thereof will be omitted.

The second fluid supply member 4290 is located on one side of the substrate support member 4230. The second fluid supply member 4290 supplies the processing liquid to the substrate W positioned above the substrate supporting member 4230. The second fluid supply member 4290 has a nozzle support 4292, a nozzle 4294, a support shaft 4296, and a driver 4298. The support shaft 4296 is provided along its lengthwise direction in the third direction 93 and the driver 4298 is coupled to the lower end of the support shaft 4296. The driver 4298 rotates and lifts the support shaft 4296. The nozzle support 4292 is coupled perpendicular to the opposite end of the support shaft 4296 coupled to the driver 4298. The nozzle 4294 is installed at the bottom end of the nozzle support 4292. The nozzle 4294 is moved to the process position and the standby position by the driver 4298. One or a plurality of second fluid supply members 4290 may be provided. If a plurality of second fluid supply members 4290 are provided, the chemical, rinsing liquid, or organic solvent may be provided through the second fluid supply member 4290, which are different from each other. The chemical may be an etchant including hydrofluoric acid, nitric acid, sulfuric acid or ammonium, the rinsing liquid may be pure, and the organic solvent may be a mixture of an isopropyl alcohol vapor and an inert gas or may be an isopropyl alcohol solution.

Although not shown, a container (not shown) for recovering the processing liquid provided in the second fluid supply member 4290 may be provided inside the drying housing 410. [ The container (not shown) may be provided in a shape that opens the upper surface and surrounds the substrate supporting member 4230. Optionally, a container (not shown) may not be provided.

Hereinafter, another embodiment of the substrate processing apparatus will be described.

6 is a plan view showing another embodiment of the substrate processing apparatus.

Referring to FIG. 6, the substrate processing apparatus 1b has an index module 10 and a processing module 20, and the index module 10 has a load port 120 and a transfer frame 140. The load port 120, the transfer frame 140, and the process module 20 are sequentially arranged in a line. The processing module 20 also has a transfer chamber 240, a buffer unit 220 and a process chamber 270. The transfer chamber 240 is provided with a guide rail 242 and a transfer unit 500 . The direction in which the load port 120, the transfer frame 140 and the process module 20 are arranged is referred to as a first direction 91 and a direction perpendicular to the first direction 91 Direction is referred to as a second direction 92 and a direction perpendicular to the plane including the first direction 91 and the second direction 92 is referred to as a third direction 93. [

Process processing module 20 includes a plurality of process chambers 270. Unlike the substrate processing apparatus 1a of FIG. 1, the process chamber 270 may be provided with the same substrate cleaning unit 3000 therein. According to one example, the substrate cleaning unit 3000 in each process chamber 270 can be subjected to both a liquid treatment process and a drying process on the substrate W. And has the same configuration and function as those of the substrate processing apparatus 1a of Fig. Hereinafter, the substrate processing apparatus 1b will be described focusing on the difference from the substrate processing apparatus 1a of FIG.

7 is a view showing the substrate cleaning unit of Fig.

7, the substrate cleaning unit 3000 includes a housing 3100, a container 3200, a spin chuck 3400, a rotating member 3490, a purge gas supplying member 3500, an elevating unit 3600, A member 3700, a fluid supply member 3800, and a heating member 3900. As shown in Fig.

The container 3200, the spin chuck 3400, the lift unit 3600 and the fluid supply member 3800 of the substrate cleaning unit 3000 are provided with the same or similar structure and function as the substrate cleaning unit 300 of Fig. 3 . Hereinafter, description of the same or similar components as those of the substrate cleaning unit 300 of FIG. 3 will be omitted, and differences from the substrate cleaning unit 3000 will be mainly described.

The housing 3100 provides space for processing the substrate within the process chamber 270. The housing 3100 is composed of an upper housing 3110 and a lower housing 3120. When the upper housing 3110 rises and the housing 3100 is opened, the substrate W is transferred into the housing 3100. When the substrate W is moved into the housing 3100, the upper housing 3110 is lowered and the housing 3100 is closed. Alternatively, the lower housing 3120 may be lowered to open the housing 3100, and the lower housing 3120 may be lifted to close the housing 3100.

The container 3200 is located inside the housing 3100. The container 3200 has the same shape and function as those of the substrate cleaning unit 300 of FIG. 3, and a description thereof will be omitted.

The spin chuck 3400 is disposed in the container 3200. The spin chuck 3400 supports the substrate W and rotates the substrate W during the process. The spin chuck 3400 has a body 3420, a support pin 3440, a chucking pin 3460, a support shaft 3480, a rotary member 3490, and a heating member 3900.

The body 3420 has a top surface that is generally circular when viewed from the top. A support shaft 3480 rotatable by a rotary member 3490 is fixedly coupled to the bottom surface of the body 3420. A plurality of support pins 3440 are provided. The support pins 3440 are spaced apart from the edge of the upper surface of the body 3420 by a predetermined distance and project upward from the body 3420. The support pins 3440 are arranged so as to have an annular ring shape as a whole by combination with each other. The support pins 3440 support the rear edge of the substrate such that the substrate W is spaced from the upper surface of the body 3420 by a certain distance. A plurality of chucking pins 3460 are provided. The chucking pin 3460 is disposed farther away from the center of the body 3420 than the support pin 3440. The chucking pin 3460 is provided to protrude upward from the body 3420. The chucking pin 3460 supports the side of the substrate W so that the substrate W is not laterally displaced from the correct position when the spin chuck 3400 is rotated. The chucking pin 3460 is provided so as to be movable linearly between the standby position and the support position along the radial direction of the body 3420. The standby position is a distance from the center of the body 3420 relative to the support position. When the substrate W is loaded or unloaded onto the spin chuck 3400, the chucking pin 3460 is positioned at the standby position and the chucking pin 3460 is positioned at the supporting position when the substrate W is being processed . At the support position, the chucking pin 3460 contacts the side of the substrate W. [ Since the spin chuck 3400 is in contact with various kinds of processing solutions for processing substrates, it can be provided with a material excellent in chemical resistance. According to one example, the spin chuck 3400 may be made of a Teflon material.

The heating member 3900 is provided inside the body 3420. The heating member 3900 may be provided at a position facing the bottom surface of the substrate W. [ According to one example, the heating member 3900 may include a hot wire provided in the form of a coil. According to another example, the heating member 3900 may be provided as a lamp.

Although not shown, a heating plate (not shown) may be positioned on the upper surface of the body 3420. The heating plate (not shown) may be provided with a material having a higher thermal conductivity than the body 3420. A heating plate (not shown) is located at the top of the heating member 3900. Alternatively, a heating plate (not shown) may not be provided.

The purge gas supplying member 3500 supplies the purge gas into the housing 3100. The purge gas supply member 3500 includes an inlet port 3510, a supply line 3520, and a storage tank 3530. According to one example, the purge gas supply member 3500 may be provided in the upper housing 3110. The purge gas is an inert gas, and according to one example, nitrogen gas may be provided.

The exhaust member 3700 exhausts the fluid inside the housing 3100 to the outside. The exhaust member 3700 includes an exhaust port 3710 and an exhaust line 3720. According to one example, the exhaust member 3700 may be provided in connection with the bottom surface of the lower housing 3120.

The elevating unit 3600 and the fluid supplying member 3800 have the same shape and function as those of the substrate cleaning unit of FIG. 3, so that a description thereof will be omitted.

Embodiments of the above-described substrate processing apparatus can be used in combination with each other.

Hereinafter, a substrate processing method according to the present invention will be described using a substrate processing apparatus according to the present invention.

In describing the substrate processing method, the use of the substrate processing apparatus according to the present invention is only for the sake of easy explanation, and therefore the substrate processing method is not limited to the substrate processing apparatus according to the present invention.

Therefore, the substrate processing method according to the present invention can be performed using other substrate processing apparatuses that perform the same or similar functions in addition to the substrate processing apparatus according to the present invention.

8 is a flowchart showing an embodiment of a substrate processing method using the substrate processing apparatus of FIG.

Referring to FIG. 8, the substrate processing method includes a liquid processing step S100, a substrate transferring step S200, and a drying step S300.

The liquid processing step S100 is performed by supplying the processing liquid to the substrate W in the liquid processing chamber. The treatment liquid to be supplied may be isopropyl alcohol. In the substrate transferring step (S200), the substrate W subjected to the liquid processing in the liquid processing chamber is transferred to the drying chamber. The drying step S300 includes heating the substrate (S310), rotating the substrate (S320), and exhausting the interior of the second processing chamber (S330). Hereinafter, the step of drying the substrate (S300) will be described in detail.

According to an embodiment of the present invention, in step S300, the substrate W is heated to uniformly dry the substrate W (S310). According to the example, the bottom surface of the substrate W can be heated by the heater. Alternatively, the top surface of the substrate W may be heated by the lamp at the top of the substrate W. [ According to another example, the substrate W may be heated by a heater or a lamp and indirectly heated by a heated heating plate.

 According to one example, the step of heating the substrate W proceeds inside the drying chamber 280. According to another example, the substrate W may be heated in the liquid processing chamber 260 or the transfer unit 500. When the substrate W is uniformly heated, the processing liquid or the like remaining on the substrate W can be uniformly dried. The treatment liquid remaining on the substrate W is uniformly dried so that the surface tension of the treatment liquid or the like remaining on the pattern of the substrate W can be kept the same for each pattern. As a result, the lining phenomenon of the substrate W can be prevented. Alternatively, the drying step (S310) by heating may be carried out directly after the liquid treatment step (S100) without a drying step by supplying another treatment fluid.

Step S300 of drying the substrate includes rotating the substrate W (S320). According to one example, the step of rotating the substrate W (S320) may be performed simultaneously with the step of heating the substrate W (S310). By heating the substrate W and simultaneously rotating the substrate W, the efficiency of the substrate processing can be improved. Alternatively, the step of rotating the substrate (S320) rather than the heating step (S310) of the substrate may be performed first.

The step S300 of drying the substrate includes a step S330 of exhausting the interior of the second processing chamber. The purge gas is supplied into the drying chamber 280 and the purge gas is exhausted to the outside of the drying chamber 280 together with the external gas, the vaporized processing liquid and the fume. According to one example, the evacuation step may start from step S200 in which the substrate W is transported to the second process chamber. When the substrate W is transferred to the second process chamber and an external gas flows into the second process chamber, there is a risk of explosion due to the high temperature inside the second process chamber during the drying process. Therefore, in order to prevent this, the exhausting step may be started after the substrate W is returned to the second process chamber. According to one example, the purge gas may be provided as nitrogen gas as an inert gas. Alternatively, the first process chamber may be evacuated if the step S300 of drying the substrate proceeds within the first process chamber.

In the above-described embodiments, the step of drying the substrate (S300) has been described as not supplying the treatment liquid to the substrate. However, the processing liquid may also be supplied to the substrate in the step S300 of drying the substrate. At this time, the treatment liquid may be provided with isopropyl alcohol as an organic solvent.

In addition, in the above-described embodiments, it is described that the liquid processing step S100 and the step of drying the substrate (S300) are performed in separate chambers. However, the liquid processing step (S100) and the step of drying the substrate (S300) may be provided in the same chamber.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

1a, 1b: substrate processing value 260: liquid processing chamber
280: drying chamber 300: substrate cleaning unit
400: substrate drying unit 4140: heating member
4180: Heating plate 500: Transfer unit

Claims (2)

A liquid processing chamber for providing a liquid processing space therein;
A substrate cleaning unit located in the liquid processing chamber for liquid-processing the substrate;
A drying chamber providing a drying space therein;
A substrate drying unit located inside the drying chamber for drying the substrate; And
And a transfer unit for transferring the substrate between the liquid processing chamber and the drying chamber,
The substrate cleaning unit
A spin chuck for supporting the substrate; And
And a first fluid supply member for supplying the processing solution to the substrate supported by the spin chuck,
The substrate drying unit
A substrate support member on which the substrate is supported;
A rotating member for rotating the substrate; And
And a heating member for heating the substrate. The method according to claim 1,
Wherein the substrate drying unit further comprises a heating plate located at an upper end of the substrate supporting member and having thermal conductivity higher than that of the substrate supporting member.

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