TWI751172B - 用於獲取高溫製程應用中之量測參數之裝置及方法 - Google Patents

用於獲取高溫製程應用中之量測參數之裝置及方法 Download PDF

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Publication number
TWI751172B
TWI751172B TW106119910A TW106119910A TWI751172B TW I751172 B TWI751172 B TW I751172B TW 106119910 A TW106119910 A TW 106119910A TW 106119910 A TW106119910 A TW 106119910A TW I751172 B TWI751172 B TW I751172B
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TW
Taiwan
Prior art keywords
substrate
assembly
sensors
enclosure
disposed
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TW106119910A
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English (en)
Chinese (zh)
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TW201810479A (zh
Inventor
玫 森
伊爾 珍森
景Ｇ 周
劉嵐
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美商克萊譚克公司
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Publication of TW201810479A publication Critical patent/TW201810479A/zh
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Publication of TWI751172B publication Critical patent/TWI751172B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
TW106119910A 2016-06-15 2017-06-15 用於獲取高溫製程應用中之量測參數之裝置及方法 TWI751172B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662350688P 2016-06-15 2016-06-15
US62/350,688 2016-06-15
US15/277,792 US10460966B2 (en) 2016-06-15 2016-09-27 Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
US15/277,792 2016-09-27

Publications (2)

Publication Number Publication Date
TW201810479A TW201810479A (zh) 2018-03-16
TWI751172B true TWI751172B (zh) 2022-01-01

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TW106119910A TWI751172B (zh) 2016-06-15 2017-06-15 用於獲取高溫製程應用中之量測參數之裝置及方法

Country Status (7)

Country Link
US (2) US10460966B2 (cg-RX-API-DMAC7.html)
JP (2) JP6920357B2 (cg-RX-API-DMAC7.html)
KR (1) KR102446462B1 (cg-RX-API-DMAC7.html)
CN (2) CN112820718B (cg-RX-API-DMAC7.html)
SG (1) SG11201807420YA (cg-RX-API-DMAC7.html)
TW (1) TWI751172B (cg-RX-API-DMAC7.html)
WO (1) WO2017218701A1 (cg-RX-API-DMAC7.html)

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US10460966B2 (en) 2016-06-15 2019-10-29 Kla-Tencor Corporation Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
US20180366354A1 (en) 2017-06-19 2018-12-20 Applied Materials, Inc. In-situ semiconductor processing chamber temperature apparatus
US10900843B2 (en) * 2018-06-05 2021-01-26 Kla Corporation In-situ temperature sensing substrate, system, and method
US10794681B2 (en) * 2018-09-04 2020-10-06 Applied Materials, Inc. Long range capacitive gap measurement in a wafer form sensor system
US11315811B2 (en) 2018-09-06 2022-04-26 Kla Corporation Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same
KR102136466B1 (ko) * 2018-09-11 2020-07-22 주식회사 이큐셀 고온 공정 진단이 가능한 웨이퍼 센서
US11054317B2 (en) * 2018-09-28 2021-07-06 Applied Materials, Inc. Method and apparatus for direct measurement of chucking force on an electrostatic chuck
US12074044B2 (en) 2018-11-14 2024-08-27 Cyberoptics Corporation Wafer-like sensor
US11636948B2 (en) * 2019-05-21 2023-04-25 Q Med Innovations, Inc. Instrument kit tracking system
KR102438344B1 (ko) * 2019-10-14 2022-09-01 세메스 주식회사 웨이퍼형 센서 유닛 및 웨이퍼형 센서 유닛의 제조 방법
KR102382971B1 (ko) * 2019-11-05 2022-04-05 이트론 주식회사 반도체 공정 진단을 위한 온도 센서 장치 및 이의 제조 방법
US11668601B2 (en) 2020-02-24 2023-06-06 Kla Corporation Instrumented substrate apparatus
US11924972B2 (en) 2020-06-02 2024-03-05 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
US11589474B2 (en) * 2020-06-02 2023-02-21 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
US20220223441A1 (en) * 2021-01-08 2022-07-14 Kla Corporation Process condition sensing apparatus
US11688614B2 (en) * 2021-04-28 2023-06-27 Kla Corporation Mitigating thermal expansion mismatch in temperature probe construction apparatus and method
US20240035896A1 (en) * 2022-07-28 2024-02-01 Applied Materials, Inc. Radical sensor substrate
CN115399913B (zh) * 2022-09-16 2024-05-03 复旦大学附属中山医院 一种高灵敏度柔性人工智能皮肤及其制备方法

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US20100155098A1 (en) * 2005-12-13 2010-06-24 Kla-Tencor Corporation Component package for maintaining safe operating temperature of components
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US5919383A (en) * 1996-12-06 1999-07-06 Corning Incorporated Package for a temperature-sensitive optical component with inner and outer containers and resistive element therein
US20100155098A1 (en) * 2005-12-13 2010-06-24 Kla-Tencor Corporation Component package for maintaining safe operating temperature of components
TWI391067B (zh) * 2009-08-27 2013-03-21 Taiflex Scient Co Ltd Thermally conductive substrate for electronic component with low thermal resistance, low thermal expansion coefficient and high electrical reliability and manufacturing method thereof
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Also Published As

Publication number Publication date
KR20190008578A (ko) 2019-01-24
US10460966B2 (en) 2019-10-29
WO2017218701A1 (en) 2017-12-21
JP6920357B2 (ja) 2021-08-18
US20200203200A1 (en) 2020-06-25
US11823925B2 (en) 2023-11-21
TW201810479A (zh) 2018-03-16
JP2021170034A (ja) 2021-10-28
CN109314066A (zh) 2019-02-05
CN112820718B (zh) 2024-12-20
JP2019523884A (ja) 2019-08-29
CN112820718A (zh) 2021-05-18
KR102446462B1 (ko) 2022-09-21
CN109314066B (zh) 2021-01-15
JP7194786B2 (ja) 2022-12-22
SG11201807420YA (en) 2018-12-28
US20170365495A1 (en) 2017-12-21

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