TWI749316B - 基板處理裝置及基板處理方法 - Google Patents
基板處理裝置及基板處理方法 Download PDFInfo
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- TWI749316B TWI749316B TW108113421A TW108113421A TWI749316B TW I749316 B TWI749316 B TW I749316B TW 108113421 A TW108113421 A TW 108113421A TW 108113421 A TW108113421 A TW 108113421A TW I749316 B TWI749316 B TW I749316B
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- 238000012545 processing Methods 0.000 title claims abstract description 595
- 239000000758 substrate Substances 0.000 title claims abstract description 246
- 238000003672 processing method Methods 0.000 title claims description 6
- 239000007788 liquid Substances 0.000 claims abstract description 572
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 111
- 239000000126 substance Substances 0.000 claims abstract description 84
- 238000003860 storage Methods 0.000 claims abstract description 64
- 238000011084 recovery Methods 0.000 claims abstract description 50
- 238000007599 discharging Methods 0.000 claims abstract description 13
- 239000000243 solution Substances 0.000 claims description 68
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 19
- 238000005259 measurement Methods 0.000 claims description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 230000001186 cumulative effect Effects 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000009825 accumulation Methods 0.000 claims 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
- 238000011002 quantification Methods 0.000 claims 1
- 239000003814 drug Substances 0.000 description 46
- 238000010586 diagram Methods 0.000 description 36
- 239000002699 waste material Substances 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 18
- 230000007423 decrease Effects 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 238000007865 diluting Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- CUPFNGOKRMWUOO-UHFFFAOYSA-N hydron;difluoride Chemical compound F.F CUPFNGOKRMWUOO-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018086881A JP7160236B2 (ja) | 2018-04-27 | 2018-04-27 | 基板処理装置および基板処理方法 |
JP2018-086881 | 2018-04-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201946139A TW201946139A (zh) | 2019-12-01 |
TWI749316B true TWI749316B (zh) | 2021-12-11 |
Family
ID=68293603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108113421A TWI749316B (zh) | 2018-04-27 | 2019-04-17 | 基板處理裝置及基板處理方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7160236B2 (ja) |
TW (1) | TWI749316B (ja) |
WO (1) | WO2019208198A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210144741A (ko) * | 2019-04-15 | 2021-11-30 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 웨이퍼의 에칭방법 및 에칭장치 |
JP6973534B2 (ja) | 2020-03-10 | 2021-12-01 | 栗田工業株式会社 | 希薄薬液供給装置 |
KR20230090403A (ko) | 2021-12-14 | 2023-06-22 | 세메스 주식회사 | 액 공급 유닛, 기판 처리 장치, 그리고 기판 처리 방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006080547A (ja) * | 1998-07-07 | 2006-03-23 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2009049108A (ja) * | 2007-08-16 | 2009-03-05 | Dainippon Screen Mfg Co Ltd | 基板処理装置および処理液成分補充方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008098425A (ja) | 2006-10-12 | 2008-04-24 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
US11158525B2 (en) | 2016-02-03 | 2021-10-26 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
-
2018
- 2018-04-27 JP JP2018086881A patent/JP7160236B2/ja active Active
-
2019
- 2019-04-09 WO PCT/JP2019/015436 patent/WO2019208198A1/ja active Application Filing
- 2019-04-17 TW TW108113421A patent/TWI749316B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006080547A (ja) * | 1998-07-07 | 2006-03-23 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2009049108A (ja) * | 2007-08-16 | 2009-03-05 | Dainippon Screen Mfg Co Ltd | 基板処理装置および処理液成分補充方法 |
Also Published As
Publication number | Publication date |
---|---|
JP7160236B2 (ja) | 2022-10-25 |
WO2019208198A1 (ja) | 2019-10-31 |
TW201946139A (zh) | 2019-12-01 |
JP2019192864A (ja) | 2019-10-31 |
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