TWI749316B - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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Publication number
TWI749316B
TWI749316B TW108113421A TW108113421A TWI749316B TW I749316 B TWI749316 B TW I749316B TW 108113421 A TW108113421 A TW 108113421A TW 108113421 A TW108113421 A TW 108113421A TW I749316 B TWI749316 B TW I749316B
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TW
Taiwan
Prior art keywords
processing
substrate
liquid
tank
amount
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TW108113421A
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English (en)
Chinese (zh)
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TW201946139A (zh
Inventor
水上大乘
石井弘晃
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日商斯庫林集團股份有限公司
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Publication of TW201946139A publication Critical patent/TW201946139A/zh
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Publication of TWI749316B publication Critical patent/TWI749316B/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
TW108113421A 2018-04-27 2019-04-17 基板處理裝置及基板處理方法 TWI749316B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018086881A JP7160236B2 (ja) 2018-04-27 2018-04-27 基板処理装置および基板処理方法
JP2018-086881 2018-04-27

Publications (2)

Publication Number Publication Date
TW201946139A TW201946139A (zh) 2019-12-01
TWI749316B true TWI749316B (zh) 2021-12-11

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ID=68293603

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108113421A TWI749316B (zh) 2018-04-27 2019-04-17 基板處理裝置及基板處理方法

Country Status (3)

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JP (1) JP7160236B2 (ja)
TW (1) TWI749316B (ja)
WO (1) WO2019208198A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210144741A (ko) * 2019-04-15 2021-11-30 신에쯔 한도타이 가부시키가이샤 실리콘 웨이퍼의 에칭방법 및 에칭장치
JP6973534B2 (ja) 2020-03-10 2021-12-01 栗田工業株式会社 希薄薬液供給装置
KR20230090403A (ko) 2021-12-14 2023-06-22 세메스 주식회사 액 공급 유닛, 기판 처리 장치, 그리고 기판 처리 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006080547A (ja) * 1998-07-07 2006-03-23 Tokyo Electron Ltd 処理装置及び処理方法
JP2009049108A (ja) * 2007-08-16 2009-03-05 Dainippon Screen Mfg Co Ltd 基板処理装置および処理液成分補充方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008098425A (ja) 2006-10-12 2008-04-24 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US11158525B2 (en) 2016-02-03 2021-10-26 Tokyo Electron Limited Substrate processing apparatus and substrate processing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006080547A (ja) * 1998-07-07 2006-03-23 Tokyo Electron Ltd 処理装置及び処理方法
JP2009049108A (ja) * 2007-08-16 2009-03-05 Dainippon Screen Mfg Co Ltd 基板処理装置および処理液成分補充方法

Also Published As

Publication number Publication date
JP7160236B2 (ja) 2022-10-25
WO2019208198A1 (ja) 2019-10-31
TW201946139A (zh) 2019-12-01
JP2019192864A (ja) 2019-10-31

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