TWI746213B - 晶片封裝結構及其形成方法 - Google Patents

晶片封裝結構及其形成方法 Download PDF

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TWI746213B
TWI746213B TW109135895A TW109135895A TWI746213B TW I746213 B TWI746213 B TW I746213B TW 109135895 A TW109135895 A TW 109135895A TW 109135895 A TW109135895 A TW 109135895A TW I746213 B TWI746213 B TW I746213B
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Taiwan
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chip
heat dissipation
substrate
layer
wall structure
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TW109135895A
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TW202117951A (zh
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季昕
許桀豪
張國欽
林政男
李明機
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台灣積體電路製造股份有限公司
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Abstract

根據一些實施例，提供了一種形成晶片封裝結構之方法。此方法包括在一基板之上設置一晶片。此方法包括在基板之上形成一散熱壁結構。散熱壁結構鄰近於晶片，且在晶片與散熱壁結構之間有一第一間隙。此方法包括在第一間隙中形成一第一導熱層。此方法包括在晶片之上形成一第二導熱層。此方法包括在基板之上設置一散熱罩，以覆蓋散熱壁結構、第一導熱層、第二導熱層以及晶片。散熱罩接合至基板、散熱壁結構、第一導熱層以及第二導熱層。

Description

晶片封裝結構及其形成方法
本揭露之一些實施例係有關於半導體封裝。
半導體裝置在各種電子應用被使用，例如，個人電腦、行動電話、數位相機以及其他電子設備。為了形成電路組件以及元件，通常藉由在半導體基板之上依序地沉積絕緣物或介電層、導電層以及半導體層，並利用光微影製程以及蝕刻製程來圖案化各種材料層而製造出半導體裝置。
在單一半導體晶圓上，通常製造出數以十計或數以百計的積體電路。藉由沿著切割道（scribe lines）切割積體電路（integrated circuit, IC）而分割出個別的晶粒。然後，單獨地封裝個別的晶粒。藉由持續降低最小特徵尺寸，其允許在給定面積中整合更多的組件，半導體產業持續改善各種電子組件（例如，電晶體、二極體、電阻、電容等）之積體密度。然而，因為特徵尺寸持續降低，製造製程持續變得更難以執行。因此，形成具有高積體密度的電子組件的可靠的封裝是具挑戰性的。
根據一些實施例，提供了一種形成晶片封裝結構之方法。此方法包括在一基板之上設置一晶片。此方法包括在基板之上形成一散熱壁結構。散熱壁結構鄰近於晶片，且在晶片與散熱壁結構之間有一第一間隙。此方法包括在第一間隙中形成一第一導熱層。此方法包括在晶片之上形成一第二導熱層。此方法包括在基板之上設置一散熱罩，以覆蓋散熱壁結構、第一導熱層、第二導熱層以及晶片。散熱罩接合至基板、散熱壁結構、第一導熱層以及第二導熱層。
根據一些實施例，提供了一種形成晶片封裝結構之方法。此方法包括將一晶片接合至一基板。此方法包括在基板之上形成一散熱壁結構。此方法包括在晶片之上以及在晶片與散熱壁結構之間形成一導熱層。此方法包括將一散熱罩接合至基板、散熱壁結構以及導熱層。
根據一些實施例，提供了一種晶片封裝結構。晶片封裝結構包括一基板、一晶片、一散熱壁結構、一第一導熱層、一第二導熱層以及一散熱罩。晶片在基板之上。散熱壁結構在基板之上，並與晶片分隔。第一導熱層在散熱壁結構與晶片之間。第二導熱層，在晶片之上。散熱罩在基板之上，並覆蓋散熱壁結構、第一導熱層、第二導熱層以及晶片。
以下的揭露內容提供許多不同的實施例或範例以實施本揭露之不同特徵。以下敘述各個構件以及排列方式之特定範例，以簡化本揭露。當然，範例僅供說明用且意欲不限於此。例如，若說明書敘述了第一特徵形成於第二特徵之上，即表示可包括上述第一特徵與上述第二特徵係直接接觸的實施例，亦可包括有附加特徵形成於上述第一特徵與上述第二特徵之間，而使上述第一特徵與第二特徵可未直接接觸的實施例。除此之外，在各種範例中，本揭露可能使用重複的參考符號及/或字母。這樣的重複係為了簡化以及清楚之目的，並不表示所討論的各種實施例及/或配置之間的關聯。
除此之外，所使用的空間相關用詞，例如：「在…下方」、「下方」、「較低的」、「上方」、「較高的」 等等的用詞，係為了便於描述圖式中一個元件或特徵與另一個（些）元件或特徵之間的關係。除了在圖式中繪示的方位外，這些空間相關用詞意欲包括使用中或操作中的裝置之不同方位。裝置可被轉向不同方位（旋轉90度或其他方位），則在此使用的空間相關詞亦可依此相同解釋。應理解的是，在本揭露描述的方法之前、過程中以及之後，可提供額外的操作，且在本揭露描述的方法之其他實施例中，可替換或刪減一些所述的操作。
以下描述本揭露的一些實施例。可在這些實施例中描述的階段之前、之中及/或之後提供額外的操作。在不同的實施例中，可替換或消除所述的某些階段。可將附加特徵添加到半導體裝置結構中。在不同的實施例中，可替換或消除以下所描述的某些特徵。儘管在以下內容中以特定順序執行的操作來討論一些實施例，但也可能以其他的邏輯順序來執行這些操作。
第1A圖至第1E圖係根據一些實施例來形成晶片封裝結構的製程之各種階段之剖面圖。如第1A圖所示，根據一些實施例，提供了一基板110。基板110包括印刷電路板（printed circuit board, PCB）、晶片或具有線路層以及墊的其他合適結構。
根據一些實施例，基板110包括一介電層112、複數個導電墊114、複數個線路層116以及複數個導電導孔118。根據一些實施例，在介電層112之上形成導電墊114。
根據一些實施例，在介電層112中形成線路層116以及導電導孔118。根據一些實施例，導電導孔118、線路層116以及導電墊114彼此電性連接。
根據一些實施例，介電層112由絕緣材料製成，例如，氧化物，例如，二氧化矽。根據一些實施例，導電墊114、線路層116以及導電導孔118由金屬（例如，銅、鋁、金、銀或鎢）或前述金屬之合金製成。
如第1A圖所示，根據一些實施例，提供了一晶片120。根據一些實施例，晶片120包括一基板122、一重分布（redistribution）層124以及一交界（interfacial）層126。根據一些實施例，基板122具有一前表面122a以及一後表面122b。
基板122包括，例如，半導體基板。在一些實施例中，基板122由包括以單晶、多晶或非晶結構形式存在的矽或鍺的元素半導體材料製成。
在一些其他實施例中，基板122由化合物半導體製成，例如，碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦、諸如為SiGe或GaAsP或SiGe與GaAsP之組合之合金半導體。基板122亦可包括多層半導體、絕緣體上覆半導體（Semiconductor-On-Insulator, SOI）（例如，絕緣體上覆矽或絕緣體上覆鍺）或多層半導體與絕緣體上覆半導體之組合。
在一些實施例中，基板122包括各種裝置元件。在一些實施例中，各種裝置元件被形成在基板122中及/或在基板122之上。為了簡化以及清楚顯示之目的，在圖式中並未示出裝置元件。各種裝置元件之範例包括主動裝置、被動裝置、其他合適的裝置或前述裝置之組合。主動裝置可包括形成在前表面122a處的電晶體或二極體（未示出）。被動裝置包括電阻、電容或其它合適的被動裝置。
例如，電晶體包括金屬氧化物半導體場效電晶體（metal oxide semiconductor field effect transistors, MOSFET）、互補式金屬氧化物半導體（complementary metal oxide semiconductor, CMOS）電晶體、雙極性電晶體（bipolar junction transistors, BJT）、高電壓電晶體、高頻率電晶體、p通道場效電晶體（p-channel field-effect transistors, PFETs）及/或n通道場效電晶體（n-channel field-effect transistors, NFETs）等。
為了形成各種裝置元件，執行各種製程，例如，前段（front-end-of-line, FEOL）半導體製造製程。前段半導體製造製程可包括沉積、蝕刻、佈植、光微影、退火、平坦化、一種或多種其他適用的製程或前述製程之組合。
在一些實施例中，在基板122中形成隔離特徵（未示出）。隔離特徵用於界定主動區域，並在主動區中電性隔離形成在基板122中及/或基板122之上的各種裝置元件。在一些實施例中，隔離特徵包括淺溝槽隔離（shallow trench isolation, STI）特徵、矽之局部氧化（local oxidation of silicon, LOCOS）特徵、其他合適的隔離特徵或前述特徵之組合。
根據一些實施例，在前表面122a之上形成重分佈層124。根據一些實施例，重分佈層124包括介電層（未示出）以及在介電層中的佈線層（未示出）。根據一些實施例，佈線層電性連接至形成在前表面122a處的裝置（未示出）。
根據一些實施例，在基板122之後表面122b之上形成交界層126。根據一些實施例，交界層126包括依序地堆疊在後表面122b之上的鈦層（未示出）、鎳-釩（NiV）層（未示出）以及金層（未示出）。
如第1A圖所示，根據一些實施例，一晶片120透過複數個凸塊130接合至基板110。根據一些實施例，凸塊130分別接合至導電墊114。根據一些實施例，在晶片120與基板110之間有一間隙G1。
晶片120包括具有高熱性能（thermal performance）的晶片，例如，中央處理單元（CPU）晶片、伺服器晶片、系統單晶片（system on chip）或高功率晶片。根據一些實施例，晶片120之功率大於500W。根據一些實施例，凸塊130在間隙G1中。根據一些實施例，凸塊130由導電材料製成，例如，焊料（solder）材料（例如，錫）。
如第1A圖所示，根據一些實施例，在間隙G1中形成一底部填充層140。根據一些實施例，底部填充層140進一步延伸至晶片120之複數個側壁128上。根據一些實施例，底部填充層140圍繞凸塊130。根據一些實施例，底部填充層140包圍晶片120。根據一些實施例，底部填充層140包括絕緣材料（例如，聚合物材料）。
第1B-1圖係根據一些實施例的第1B圖之晶片封裝結構之俯視圖。第1B圖係繪示根據一些實施例的沿著第1B-1圖中的剖面線I-I’的晶片封裝結構之剖面圖。如第1B圖以及第1B-1圖所示，根據一些實施例，在基板110之上形成一黏著層150。
根據一些實施例，黏著層150具有環形。根據一些實施例，黏著層150由聚合物製成，例如，環氧樹脂或矽樹脂。根據一些實施例，利用分配製程來形成黏著層150。
如第1B圖以及第1B-1圖所示，根據一些實施例，在黏著層150之上形成一散熱壁結構160。根據一些實施例，散熱壁結構160鄰近於晶片120。根據一些實施例，在晶片120與散熱壁結構160之間有一間隙G2。根據一些實施例，散熱壁結構160具有環形形狀。
根據一些實施例，散熱壁結構160由具有良好導熱係數的材料製成，例如，金屬材料（例如，鋁、銅及/或鎳）或合金材料（例如，不銹鋼）。在一些實施例中，散熱壁結構160係環形結構，且透過黏著層150將散熱壁結構160（或環形結構）接合至基板110使得散熱壁結構160被形成在基板110之上。在一些實施例中，使用電鍍製程來形成散熱壁結構160。
如第1B圖以及第1B-1圖所示，根據一些實施例，在散熱壁結構160之上形成一黏著層170。根據一些實施例，黏著層170由聚合物製成，例如，環氧樹脂或矽樹脂。根據一些實施例，利用分配製程來形成黏著層170。
第1C-1圖係根據一些實施例的第1C圖之晶片封裝結構之俯視圖。第1C圖係繪示根據一些實施例的沿著第1C-1圖中的剖面線I-I’的晶片封裝結構之剖面圖。如第1C圖以及第1C-1圖所示，根據一些實施例，在間隙G2中形成一導熱層180。
根據一些實施例，導熱層180填充間隙G2。根據一些實施例，導熱層180用於將熱量從晶片120傳導至散熱壁結構160。根據一些實施例，導熱層180具有從間隙G2延伸出的一頂部部分182。根據一些實施例，頂部部分182流動至晶片120之一頂表面129。
根據一些實施例，導熱層180直接接觸底部填充層140、散熱壁結構160、基板110、黏著層150、黏著層170以及晶片120。根據一些實施例，導熱層180在底部填充層140與散熱壁結構160之間。
在一些實施例中，導熱層180之下部部分在底部填充層140與黏著層150之間。在一些實施例中，導熱層180之一寬度W1隨著朝向基板110而減少。根據一些實施例，寬度W1隨著連續地朝向基板110而減少。如第1C-1圖所示，根據一些實施例，導熱層180圍繞晶片120。根據一些實施例，散熱壁結構160圍繞導熱層180。
根據一些實施例，導熱層180之導熱係數大於空氣之導熱係數。亦即，根據一些實施例，導熱層180由導熱係數大於空氣之導熱係數的材料製成。在一些實施例中，材料包括可流動的材料，例如，聚合物材料（例如，矽樹脂）或聚合物與金屬（例如，銀膏）之組合。根據一些實施例，利用分配製程來形成導熱層180。
第1D-1圖係根據一些實施例的第1D圖之晶片封裝結構之俯視圖。第1D圖係繪示根據一些實施例的沿著第1D-1圖中的剖面線I-I’的晶片封裝結構之剖面圖。如第1D圖以及第1D-1圖所示，根據一些實施例，在晶片120之上形成一導熱層190。如第1D圖以及第1D-1圖所示，根據一些實施例，導熱層180之頂部部分182在導熱層190與散熱壁結構160（或黏著層170）之間。
如第1D圖以及第1D-1圖所示，根據一些實施例，導熱層190之一頂表面192與導熱層180之一頂表面184大致上共面。本申請中的用語「大致上共面」可包括與共面幾何存在微小偏差的情形。可能因為製造製程而產生偏差。根據一些實施例，在一些其他實施例中，頂表面192略高於頂表面184。根據一些實施例，導熱層190直接接觸晶片120與導熱層180之交界層126。
如第1D圖以及第1D-1圖所示，根據一些實施例，導熱層180連續地圍繞整個導熱層190，且散熱壁結構160（或黏著層170或黏著層150）連續地圍繞整個導熱層180以及整個導熱層190。
根據一些實施例，導熱層190係片狀結構。因此，根據一些實施例，導熱層190亦被稱為導熱片。根據一些實施例，導熱層190由金屬材料（例如，錫、銀、金或銦）、前述金屬之合金材料或摻有高導熱係數的材料（例如，石墨、石墨烯或金屬）的聚合物材料製成。
在一些實施例中，導熱層190之導熱係數大於導熱層180之導熱係數。在一些實施例中，散熱壁結構160之導熱係數大於導熱層180之導熱係數。
根據一些實施例，導熱層180較導熱層190軟。根據一些實施例，利用沉積製程來形成導熱層190。根據一些實施例，因為導熱層180較導熱層190軟，流動至晶片120之頂表面129上的（較軟的）導熱層180（如第1C圖所示）被（較硬的）導熱層190擠壓至頂表面129之外。
第1E-1圖係根據一些實施例的第1E圖之晶片封裝結構之俯視圖。第1E圖係繪示根據一些實施例的沿著第1E-1圖中的剖面線I-I’的晶片封裝結構之剖面圖。如第1E圖以及第1E-1圖所示，根據一些實施例，在基板110之上形成一黏著層210。根據一些實施例，黏著層210連續地圍繞散熱壁結構160、導熱層180以及導熱層190（或晶片120）。
根據一些實施例，黏著層210具有環形。根據一些實施例，黏著層210由聚合物製成，例如，環氧樹脂或矽樹脂。根據一些實施例，利用分配製程來形成黏著層210。
如第1E圖以及第1E-1圖所示，根據一些實施例，在基板110之上設置一散熱罩（lid）220，以覆蓋散熱壁結構160、導熱層180、導熱層190以及晶片120。根據一些實施例，散熱罩220透過黏著層210接合至基板110。
根據一些實施例，散熱罩220亦透過黏著層170接合至散熱壁結構160。根據一些實施例，散熱罩220更接合至導熱層180以及導熱層190。根據一些實施例，在將散熱罩220設置在基板110之上之後，導熱層180直接接觸散熱罩220、導熱層190、底部填充層140、基板110、散熱壁結構160、黏著層150以及黏著層170。
根據一些實施例，導熱層190直接接觸散熱罩220。根據一些實施例，導熱層190具有在約200微米至約400微米的範圍內的一厚度T1。根據一些實施例，散熱罩220包括一頂板222、一罩側壁結構224、一外緣部分226以及一交界層228。根據一些實施例，罩側壁結構224在頂板222之下。
根據一些實施例，罩側壁結構224在頂板222與外緣部分226之間。根據一些實施例，罩側壁結構224連接至頂板222以及外緣部分226。根據一些實施例，外緣部分226接合至黏著層210。根據一些實施例，交界層228在頂板222之一下表面222a之上。
根據一些實施例，交界層228在頂板222與導熱層190之間，並連接至頂板222以及導熱層190。根據一些實施例，交界層228包括依序地堆疊在頂板222之下表面222a之上的一鎳層（未示出）以及一金層（未示出）。
根據一些實施例，散熱壁結構160在晶片120與罩側壁結構224之間。在一些實施例中，在晶片120與散熱壁結構160之間的一距離A1小於在散熱壁結構160與罩側壁結構224之間的一距離A2。
根據一些實施例，藉由一距離A3分隔晶片120與罩側壁結構224。在一些實施例中，距離A1與距離A3之比值（A1/A3）在約0.15至約0.35的範圍內。在一些例子中，如果比值（A1/A3）小於0.15，則間隙G2可能太窄而無法順利地填充導熱層180。
在一些例子中，如果比值（A1/A3）大於0.35，則晶片120與散熱壁結構160之間的導熱路徑可能太長而可能導致來自晶片120的熱量可能無法有效地傳遞至散熱壁結構160。在一些實施例中，距離A1與導熱層190之厚度T1之比值（A1/T1）在約1至約5的範圍內。
根據一些實施例，在散熱壁結構160與罩側壁結構224之間有一空氣間隙G3。根據一些實施例，散熱罩220由高導熱係數的材料製成，例如，金屬材料（鋁或銅）、合金材料（例如，不銹鋼）或鋁-碳化矽（AlSiC）。
根據一些實施例，在將散熱罩220設置在基板110之上之後，執行退火製程。在退火製程的期間，導熱層190被熔化，其改善了導熱層190與晶片120之交界層126之黏著以及導熱層190與散熱罩220之交界層228之黏著。根據一些實施例，在退火製程之後，熔化的導熱層190被固化。
在一些實施例中，導熱層190之一寬度W2大致上等同於晶片120之一寬度W3。根據一些實施例，本申請中的用語「大致上等同於」代表「在10%內」。例如，根據一些實施例，用語「大致上等同於」代表寬度W2與寬度W3之間的差距在導熱層190與晶片120的平均寬度之10%內。可能因為製造製程而產生差距。
根據一些實施例，在退火製程之後，交界層126包括依序地堆疊在後表面122b之上的鈦層（未示出）、鎳-釩層（未示出）、銦-鎳-金（InNiAu）層（未示出）以及銦-金（InAu）層（未示出）。
根據一些實施例，在退火製程之後，交界層228包括依序地堆疊在頂板222之下表面222a之上的鎳層（未示出）、銦-鎳-金層（未示出）以及銦-金層（未示出）。
根據一些實施例，導熱層180透過退火製程而固化。根據一些實施例，在退火製程之後，導熱層180仍然較導熱層190軟。根據一些實施例，導熱層190之楊式模數（Young’s Modulus）大於導熱層180之楊式模數。根據一些實施例，在此步驟中，大致上形成了一晶片封裝結構100。
根據一些實施例，散熱壁結構160具有一寬度W4。根據一些實施例，藉由距離A3分隔晶片120與罩側壁結構224。根據一些實施例，在一些實施例中，寬度W4與距離A3的比值（W4/A3）在約0.05至約0.2的範圍內。
在一些例子中，如果比值（W4/A3）小於0.05時，散熱壁結構160與散熱罩220之間的導熱路徑可能太窄而導致來自晶片120的熱量無法有效地傳遞至散熱罩220。
在一些例子中，如果比值（W4/A3）大於0.2，則散熱壁結構160與基板110之間的熱應力可能過大，其可能影響散熱壁結構160之穩定性。根據一些實施例，散熱壁結構160以及基板110具有不同的熱膨脹係數。
根據一些實施例，導熱層190創造了晶片120與散熱罩220之間的導熱路徑，且導熱層180連同散熱壁結構160一起創造了晶片120與散熱罩220之間額外的導熱路徑。因此，根據一些實施例，額外的導熱路徑改善了晶片封裝結構100之散熱效率，其改善了晶片封裝結構100之可靠性。
根據一些實施例，因為導熱層180較導熱層190軟，導熱層180能夠減輕在後續的退火製程中晶片120（例如，晶片120之複數個角落部分120c）與導熱層190之間所產生的熱應力。因此，根據一些實施例，較軟的導熱層180避免了在後續的退火製程中較硬的導熱層190（例如，鄰近於角落部分120c的導熱層190）產生裂痕（cracking）。因此，根據一些實施例，改善了晶片封裝結構100之可靠性。
第2A圖係根據一些實施例的一晶片封裝結構200之俯視圖。第2B圖係繪示根據一些實施例的沿著第2A圖中的剖面線I-I’的晶片封裝結構200之剖面圖。如第2A圖以及第2B圖所示，根據一些實施例，除了散熱壁結構160具有U形形狀之外，晶片封裝結構200類似於第1E-1圖之晶片封裝結構100。根據一些實施例，黏著層150以及黏著層170具有U形形狀。根據一些實施例，導熱層180具有U形形狀。
根據一些實施例，晶片120具有形成在前表面122a的複數個高性能裝置121。根據一些實施例，高性能裝置121包括高速積體電路、記憶體裝置、高工作頻率裝置或高電流裝置。
根據一些實施例，高性能設備121設置於較靠近晶片120之一側122c、一側122d以及一側122e，且較遠離晶片120之一側122f。因此，根據一些實施例，鄰近於側122c、側122d以及側122e的散熱壁結構160以及導熱層180能夠迅速地將來自高性能裝置121的熱量傳導至散熱罩220。
散熱壁結構160、導熱層180、黏著層150以及黏著層170之U形設計可降低散熱壁結構160、導熱層180、黏著層150以及黏著層170之材料成本。
第3圖係根據一些實施例的一晶片封裝結構300之俯視圖。如第3圖所示，根據一些實施例，除了散熱壁結構160具有彼此分隔的一條狀部分162以及一條狀部分164之外，晶片封裝結構300類似於第2A圖之晶片封裝結構200。
根據一些實施例，黏著層150具有彼此分隔的一條狀部分152以及一條狀部分154。根據一些實施例，黏著層170具有彼此分隔的一條狀部分172以及一條狀部分174。根據一些實施例，導熱層180具有彼此分隔的一條狀部分186以及一條紋部分188。
根據一些實施例，條狀部分152、條狀部分162、條狀部分172以及條狀部分186鄰近於晶片120之側122c。根據一些實施例，條狀部分154、條狀部分164、條狀部分174以及條狀部分188鄰近於晶片120之側122e。
根據一些實施例，晶片120之高性能設備121設置於較靠近晶片120之側122c以及側122e，且較遠離晶片120之側122d以及側122f。因此，根據一些實施例，鄰近於側122c以及側122e的散熱壁結構160以及導熱層180能夠迅速地將來自高性能裝置121的熱量傳導至散熱罩220。
第4圖係根據一些實施例的一晶片封裝結構400之俯視圖。如第4圖所示，根據一些實施例，除了導熱層190較晶片120寬之外，晶片封裝結構400類似於第1E圖之晶片封裝結構100。亦即，根據一些實施例，導熱層190之寬度W2大於晶片120之寬度W3。
根據一些實施例，導熱層190被部分地形成在導熱層180之上。在一些實施例中，導熱層190之複數個邊緣部分194埋入在導熱層180中。
在一些實施例中，導熱層190之導熱係數大於導熱層180之導熱係數。根據一些實施例，（較寬的）導熱層190可增加導熱層190與散熱罩220之間的接觸面積，其改善了導熱層190與散熱罩220之間的導熱效率。因此，根據一些實施例，改善了晶片封裝結構400之散熱效率。
第5A圖係根據一些實施例的一晶片封裝結構500之剖面圖。第5B圖係根據一些實施例的第5A圖之晶片封裝結構500之俯視圖。第5A圖係繪示根據一些實施例的沿著第5B圖中的剖面線I-I’的晶片封裝結構500之剖面圖。
如第5A圖以及第5B圖所示，根據一些實施例，除了導熱層190窄於晶片120之外，晶片封裝結構500類似於第1E圖以及第1E-1圖之晶片封裝結構100。亦即，根據一些實施例，導熱層190之寬度W2小於晶片120之寬度W3。根據一些實施例，導熱層180部分地延伸至晶片120之頂表面129上。
根據一些實施例，熱應力傾向於集中在晶片120之角落部分120c中。因為（軟的）導熱層180包覆角落部分120c，（軟的）導熱層180可減輕角落部分120c中大多數的熱應力，並避免在後續的退火製程中（較硬的）導熱層190產生裂痕。
第6圖係根據一些實施例的一晶片封裝結構600之剖面圖。如第6圖所示，根據一些實施例，除了散熱壁結構160具有面對晶片120的一側壁166，且側壁166具有一凹槽166a之外，晶片封裝結構600類似於第1E圖之晶片封裝結構100。根據一些實施例，導熱層180填充凹槽166a。
根據一些實施例，凹槽166a能夠增加導熱層180與散熱壁結構160之間的接觸面積，其改善了導熱層180與散熱壁結構160之間的導熱效率。
根據一些實施例，凹槽166a具有一深度D1。根據一些實施例，散熱壁結構160具有寬度W4。在一些實施例中，深度D1與散熱壁結構160之寬度W4之比值（D1/W4）在約0.3至約0.6的範圍內。
在一些例子中，如果比值（D1/W4）小於0.3，則導熱層180與散熱壁結構160之間的接觸面積之增加可能不明顯。在一些例子中，如果比值（D1/W4）大於0.6，則凹槽166a可能導致散熱壁結構160之結構強度受到損害。
第7圖係根據一些實施例的一晶片封裝結構700之剖面圖。如第7圖所示，根據一些實施例，除了散熱壁結構160之側壁166具有複數個凹槽166a之外，晶片封裝結構700類似於第6圖之晶片封裝結構600。
根據一些實施例，導熱層180填充凹槽166a。根據一些實施例，凹槽166a具有相同的深度D1。在一些實施例中，深度D1與散熱壁結構160之寬度W4之比值（D1/W4）在約0.3至約0.6的範圍內。
第8圖係根據一些實施例的一晶片封裝結構800之剖面圖。如第8圖所示，根據一些實施例，除了散熱壁結構160之側壁166之凹槽166a具有不同的深度D1、一深度D2、一深度D3以及一深度D4之外，晶片封裝結構800類似於第7圖之晶片封裝結構700。
在一些實施例中，深度D1與散熱壁結構160之寬度W4之比值（D1/W4）在約0.3至約0.6的範圍內。在一些實施例中，深度D2與寬度W4之比值（D2/W4）在約0.3至約0.6的範圍內。在一些實施例中，深度D3與寬度W4之比值（D3/W4）在約0.3至約0.6的範圍內。在一些實施例中，深度D4與寬度W4之比值（D4/W4）在約0.3至約0.6的範圍內。
第9圖係根據一些實施例的一晶片封裝結構900之剖面圖。如第9圖所示，根據一些實施例，除了導熱層180延伸至在晶片120與基板110之間的間隙G1之外，晶片封裝結構900類似於第1E圖之晶片封裝結構100。根據一些實施例，間隙G1中的導熱層180圍繞凸塊130。根據一些實施例，在晶片封裝結構900中，並未形成底部填充層。
第10圖係根據一些實施例的一晶片封裝結構1000之剖面圖。在第1B圖之步驟之後，如第10圖所示，根據一些實施例，在晶片120與散熱壁結構160之間的間隙G2中以及晶片120之上形成一導熱層1010。根據一些實施例，導熱層1010直接接觸散熱罩220、晶片120、散熱壁結構160、基板110、底部填充層140、黏著層150以及黏著層170。
根據一些實施例，導熱層1010由導熱係數大於空氣之導熱係數的材料製成。在一些實施例中，材料包括可流動的材料，例如，聚合物材料（例如，矽樹脂）或聚合物與金屬之組合（例如，銀漿）。
根據一些實施例，利用分配製程來形成導熱層1010。之後，根據一些實施例，執行第1E圖之步驟。在此步驟中，根據一些實施例，大致上形成了晶片封裝結構1000。
第11圖係根據一些實施例的一晶片封裝結構1100之剖面圖。如第11圖所示，根據一些實施例，除了晶片封裝結構1100之導熱層1010進一步延伸至在晶片120與基板110之間的間隙G1中之外，晶片封裝結構1100類似於第10圖之晶片封裝結構1000。
根據一些實施例，導熱層1010圍繞凸塊130。根據一些實施例，在晶片封裝結構1100中，並未形成底部填充層。
第12圖係根據一些實施例的一晶片封裝結構1200之剖面圖。如第12圖所示，根據一些實施例，除了散熱罩220不具有外緣部分226之外，晶片封裝結構1200類似於第1E圖之晶片封裝結構100。
根據一些實施例，罩側壁結構224接合至黏著層210。根據一些實施例，罩側壁結構224具有大致上垂直於基板110之一頂面111的一外側壁224a。
根據一些實施例，形成晶片封裝結構200、晶片封裝結構300、晶片封裝結構400、晶片封裝結構500、晶片封裝結構600、晶片封裝結構700、晶片封裝結構800、晶片封裝結構900、晶片封裝結構1000、晶片封裝結構1100以及晶片封裝結構1200之製程以及材料可等同於或類似於前述形成晶片封裝結構100之製程以及材料。
根據一些實施例，提供了晶片封裝結構及其形成方法。（用於形成晶片封裝結構之）方法形成了鄰近於一晶片的一散熱壁結構，散熱壁結構連接至其上的一散熱罩，且形成了在晶片與散熱壁結構之間的一導熱層。散熱壁結構以及導熱層將來自晶片之一側壁的熱傳導至散熱罩。因此，改善了晶片封裝結構之散熱效率。因此，改善了晶片封裝結構之可靠性。
根據一些實施例，提供了一種形成晶片封裝結構之方法。此方法包括在一基板之上設置一晶片。此方法包括在基板之上形成一散熱壁結構。散熱壁結構鄰近於晶片，且在晶片與散熱壁結構之間有一第一間隙。此方法包括在第一間隙中形成一第一導熱層。此方法包括在晶片之上形成一第二導熱層。此方法包括在基板之上設置一散熱罩，以覆蓋散熱壁結構、第一導熱層、第二導熱層以及晶片。散熱罩接合至基板、散熱壁結構、第一導熱層以及第二導熱層。
在一些實施例中，在基板之上設置散熱罩之後，第一導熱層直接接觸散熱罩、第二導熱層、散熱壁結構以及基板。在一些實施例中，第二導熱層直接接觸散熱罩、第一導熱層以及晶片。在一些實施例中，第二導熱層之一第一導熱係數大於第一導熱層之一第二導熱係數，且第二導熱係數大於空氣之一第三導熱係數。在一些實施例中，散熱壁結構具有面對晶片的一側壁，側壁具有一凹槽，且第一導熱層填充凹槽。在一些實施例中，晶片透過一凸塊而接合至基板，在晶片與基板之間有一第二間隙，凸塊在第二間隙中。且此方法更包括在基板之上形成散熱壁結構之前，在第二間隙中形成一底部填充層。底部填充層圍繞凸塊。在一些實施例中，第一導熱層直接接觸底部填充層。在一些實施例中，在基板之上形成散熱壁結構包括透過一黏著層將散熱壁結構接合至基板。在一些實施例中，晶片透過一凸塊而接合至基板，在晶片與基板之間有一第二間隙，凸塊在第二間隙中，且第一導熱層延伸至第二間隙中並圍繞凸塊。在一些實施例中，第一導熱層較第二導熱層軟。在一些實施例中，第一導熱層圍繞晶片，且散熱壁結構圍繞第一導熱層。
根據一些實施例，提供了一種形成晶片封裝結構之方法。此方法包括將一晶片接合至一基板。此方法包括在基板之上形成一散熱壁結構。此方法包括在晶片之上以及在晶片與散熱壁結構之間形成一導熱層。此方法包括將一散熱罩接合至基板、散熱壁結構以及導熱層。
在一些實施例中，散熱罩包括一頂板以及一罩側壁結構，罩側壁結構在頂板之下且連接至頂板，散熱壁結構在晶片與罩側壁結構之間，且在晶片與散熱壁結構之間的一第一距離小於在散熱壁結構與罩側壁結構之間的一第二距離。在一些實施例中，晶片透過一凸塊而接合至基板，在晶片與基板之間有一間隙，凸塊在間隙中，且導熱層延伸至間隙中並圍繞凸塊。在一些實施例中，導熱層直接接觸散熱罩、晶片、散熱壁結構以及基板。
根據一些實施例，提供了一種晶片封裝結構。晶片封裝結構包括一基板、一晶片、一散熱壁結構、一第一導熱層、一第二導熱層以及一散熱罩。晶片在基板之上。散熱壁結構在基板之上，並與晶片分隔。第一導熱層在散熱壁結構與晶片之間。第二導熱層，在晶片之上。散熱罩在基板之上，並覆蓋散熱壁結構、第一導熱層、第二導熱層以及晶片。
在一些實施例中，第一導熱層之一部分在第二導熱層與散熱壁結構之間。在一些實施例中，第二導熱層之一邊緣部分埋入在第一導熱層中。在一些實施例中，晶片封裝結構更包括一凸塊以及一底部填充層。一凸塊在晶片與基板之間。底部填充層在晶片與基板之間，並圍繞凸塊。第一導熱層在底部填充層與散熱壁結構之間。在一些實施例中，第一導熱層之一寬度隨著朝向基板而減少。
以上概述數個實施例之特徵，使得本技術領域中具有通常知識者可更佳地理解本揭露之各方面。本技術領域中具有通常知識者應理解的是，可輕易地使用本揭露作為設計或修改其他製程以及結構的基礎，以實現在此介紹的實施例之相同目的及/或達成相同優點。本技術領域中具有通常知識者亦應理解的是，這樣的等同配置並不背離本揭露之精神以及範疇，且在不背離本揭露之精神以及範疇的情形下，可對本揭露進行各種改變、替換以及更改。
100,200,300,400,500,600,700,800,900,1000,1100,1200:晶片封裝結構 110:基板 111:基板之頂面 112:介電層 114:導電墊 116:線路層 118:導電導孔 120:晶片 120c:角落部分 121:高性能裝置 122:基板 122a:前表面 122b:後表面 122c,122d,122e,122f:側 124:重分布層 126,228:交界層 128:晶片之側壁 129:晶片之頂表面 130:凸塊 140:底部填充層 150,170,210:黏著層 152,154,172,174:黏著層之條狀部分 160:散熱壁結構 162,164:散熱壁結構之條狀部分 166:散熱壁結構之側壁 166a:凹槽 180,190,1010:導熱層 182:導熱層之頂部部分 184,192:導熱層之頂表面 186,188:導熱層之條狀部分 194:導熱層之邊緣部分 220:散熱罩 222:頂板 222a:頂板之下表面 224:罩側壁結構 224a:罩側壁結構之外側壁 226:外緣部分 A1,A2,A3:距離 D1,D2,D3,D4:深度 G1,G2,G3:間隙 T1:厚度 W1,W2,W3,W4:寬度
當閱讀所附圖式時，從以下的詳細描述能最佳理解本揭露之各方面。應注意的是，各種特徵並不一定按照比例繪製。事實上，可能任意地放大或縮小各種特徵之尺寸，以做清楚的說明。 第1A圖至第1E圖係根據一些實施例來形成晶片封裝結構的製程之各種階段之剖面圖。 第1B-1圖係根據一些實施例的第1B圖之晶片封裝結構之俯視圖。 第1C-1圖係根據一些實施例的第1C圖之晶片封裝結構之俯視圖。 第1D-1圖係根據一些實施例的第1D圖之晶片封裝結構之俯視圖。 第1E-1圖係根據一些實施例的第1E圖之晶片封裝結構之俯視圖。 第2A圖係根據一些實施例的晶片封裝結構之俯視圖。 第2B圖係繪示根據一些實施例的沿著第2A圖中的剖面線I-I’的晶片封裝結構之剖面圖。 第3圖係根據一些實施例的晶片封裝結構之俯視圖。 第4圖係根據一些實施例的晶片封裝結構之剖面圖。 第5A圖係根據一些實施例的晶片封裝結構之剖面圖。 第5B圖係根據一些實施例的第5A圖之晶片封裝結構之俯視圖。 第6圖係根據一些實施例的晶片封裝結構之剖面圖。 第7圖係根據一些實施例的晶片封裝結構之剖面圖。 第8圖係根據一些實施例的晶片封裝結構之剖面圖。 第9圖係根據一些實施例的晶片封裝結構之剖面圖。 第10圖係根據一些實施例的晶片封裝結構之剖面圖。 第11圖係根據一些實施例的晶片封裝結構之剖面圖。 第12圖係根據一些實施例的晶片封裝結構之剖面圖。
無
100：晶片封裝結構
110：基板
120：晶片
122：基板
122b：後表面
126,228：交界層
130：凸塊
140：底部填充層
150,170,210：黏著層
160：散熱壁結構
180,190：導熱層
220：散熱罩
222：頂板
222a：頂板之下表面
224：罩側壁結構
226：外緣部分
A1,A2,A3：距離
G2,G3：間隙
T1：厚度
W2,W3,W4：寬度

Claims (9)

  1. 一種形成晶片封裝結構之方法，包括：在一基板之上設置一晶片；在該基板之上形成一散熱壁結構，其中該散熱壁結構鄰近於該晶片，且在該晶片與該散熱壁結構之間有一第一間隙；在該第一間隙中形成一第一導熱層；在該晶片之上形成一第二導熱層；以及在該基板之上設置一散熱罩，以覆蓋該散熱壁結構、該第一導熱層、該第二導熱層以及該晶片，其中該散熱罩接合至該基板、該散熱壁結構、該第一導熱層以及該第二導熱層，其中該第一導熱層較該第二導熱層軟。
  2. 如請求項1之形成晶片封裝結構之方法，其中在該基板之上設置該散熱罩之後，該第一導熱層直接接觸該散熱罩、該第二導熱層、該散熱壁結構以及該基板。
  3. 如請求項1之形成晶片封裝結構之方法，其中該第二導熱層之一第一導熱係數大於該第一導熱層之一第二導熱係數，且該第二導熱係數大於空氣之一第三導熱係數。
  4. 如請求項1之形成晶片封裝結構之方法，其中該晶片透過一凸塊而接合至該基板，在該晶片與該基板之間有一第二間隙，該凸塊在該第二間隙中，且該第一導熱層延伸至該第二間隙中並圍繞該凸塊。
  5. 一種形成晶片封裝結構之方法，包括：將一晶片接合至一基板；在該基板之上形成一散熱壁結構； 在該晶片之上以及在該晶片與該散熱壁結構之間形成一導熱層；以及將一散熱罩接合至該基板、該散熱壁結構以及該導熱層，其中該散熱壁結構包括面對該晶片的一側壁，該側壁具有一凹槽，且該導熱層填充該凹槽。
  6. 如請求項5之形成晶片封裝結構之方法，其中該散熱罩包括一頂板以及一罩側壁結構，該罩側壁結構在該頂板之下且連接至該頂板，該散熱壁結構在該晶片與該罩側壁結構之間，且在該晶片與該散熱壁結構之間的一第一距離小於在該散熱壁結構與該罩側壁結構之間的一第二距離，其中該晶片與該散熱壁結構之間的該第一距離與該晶片與該罩側壁結構之間的一第三距離之比值在0.15至0.35的範圍內。
  7. 一種晶片封裝結構，包括：一基板；一晶片，在該基板之上；一散熱壁結構，在該基板之上，並與該晶片分隔；一第一導熱層，在該散熱壁結構與該晶片之間；一第二導熱層，在該晶片之上；以及一散熱罩，在該基板之上，並覆蓋該散熱壁結構、該第一導熱層、該第二導熱層以及該晶片，其中該第一導熱層較該第二導熱層軟。
  8. 如請求項7之晶片封裝結構，更包括：一凸塊，在該晶片與該基板之間；以及一底部填充層，在該晶片與該基板之間，並圍繞該凸塊，其中該第一導熱層在該底部填充層與該散熱壁結構之間。
  9. 如請求項8之晶片封裝結構，其中該第一導熱層之一寬度隨著朝 向該基板而減少。
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