TW484221B - A dual chip package and the wafer level packaging method - Google Patents

A dual chip package and the wafer level packaging method Download PDF

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Publication number
TW484221B
TW484221B TW90104968A TW90104968A TW484221B TW 484221 B TW484221 B TW 484221B TW 90104968 A TW90104968 A TW 90104968A TW 90104968 A TW90104968 A TW 90104968A TW 484221 B TW484221 B TW 484221B
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TW
Taiwan
Prior art keywords
wafer
chip
dual
item
pad
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TW90104968A
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Chinese (zh)
Inventor
John Liou
Yau-Jung Li
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Chipmos Technologies Inc
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Priority to TW90104968A priority Critical patent/TW484221B/en
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Publication of TW484221B publication Critical patent/TW484221B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

A dual chip package and the wafer level packaging method for the same are disclosed. The dual chip package includes a first chip, a second chip and the least an electrically connecting device. The first chip has an active surface orienting toward the active surface of the second chip. The electrically connecting device connects the first bonding pad on the active surface of the first chip and the corresponding second bonding pad on the active surface of the second chip and has an exposing surface end vertical with the active surface of the first chip or/and the second chip. So the dual chip package possesses the benefits of lateral surface mounting, chip size package, and wafer level packaging.

Description

484221 五、發明說明d) 【發明領域】 本發明係有關於一種雙晶片構裝體及其晶圓級封裝方 法’特別係有關於一種可供側向結合並具晶片尺寸封裝之 雙晶片構裝體。 【先前技術】 所謂「晶片尺寸封裝結構」〔Chip Size Package, CSP ]係指一封裝結構之尺寸等於或略小或大於一點二倍 之封裝結構内晶片之尺寸,使該晶片尺寸封裝結構具有小 表面結合面積及微小化之設計應用,此外,目前一般之封 裝結構具有一上表面、一下表面及較小之四邊側面,當以 3亥下表面做為表面結合〔sur face mount i ng〕時,僅以該 上表面為散熱面,使得不易散熱。 制美國專利第5, 493, 1 5 1號「半導體裝置、導線架及其 製造方法」揭示一種可供側向結合之封裝結構,如第^圖 所不,忒封裝結構6 〇係以由一半蝕刻之導線架承載並電伯 連接晶片61,該導線架具有一黏晶箱,其黏固該晶片 2 ’以及複數個内引指63與外引指64,其中内引指63係应 外引指64 —體成型並以蝕刻形成高度差,使内引指63 夕^引指64,當該晶片61黏固於黏晶部66 焊,484221 V. Description of the invention d) [Field of the invention] The present invention relates to a dual-chip structure and a wafer-level packaging method thereof. In particular, the present invention relates to a dual-chip structure that can be laterally bonded and has a chip size package. body. [Previous technology] The so-called "chip size package structure" [Chip Size Package, CSP] refers to the size of a chip in a package structure with a package size equal to or slightly smaller or larger than 1.2 times, so that the chip size package structure has Design and application of small surface bonding area and miniaturization. In addition, the current general packaging structure has an upper surface, a lower surface, and smaller four sides. When the lower surface is used as the surface bonding [sur face mount i ng] Only the upper surface is used as a heat dissipation surface, making it difficult to dissipate heat. US Patent No. 5,493, 151 "Semiconductor Device, Lead Frame and Manufacturing Method" discloses a packaging structure that can be laterally bonded. As shown in Figure ^, the packaging structure 60 is made by half The etched lead frame carries and electrically connects the wafer 61. The lead frame has a crystal sticking box which is used to fix the wafer 2 'and a plurality of inner and outer fingers 63 and 64. The inner finger 63 should be the outer lead. Finger 64 is formed in a body and is formed by etching to form a height difference, so that the inner finger 63 and the finger 64 are bonded. When the wafer 61 is fixed to the die attach portion 66,

62内部電性連接晶片61與内引如,再以—封=個U 〔encapsulant〕密封晶片 61 並 ^ 面之裸露表面6 5你炎从 裸心出外弓丨心64之在側表 田稞 65 作為外端接點,此一封裝处槿row 豐,側向結合於一印刷電路板50〔如第2圖所^構6〇可片 到向密度地多個封裝結構6 〇結 不,以達 心。至一印刷電路板5〇並具62 Internally electrically connects the chip 61 to the inner lead, and then seals the chip 61 with-seal = a U [encapsulant] and ^ the exposed surface of the face 6 5 You yan from the naked heart out of the bow 丨 the heart 64 on the side surface Tian 65 As an external termination point, this package has a high density and is laterally bonded to a printed circuit board 50 (as shown in Figure 2), which can be sliced to a plurality of packaging structures with a density of 60 °. heart. To a printed circuit board 50

λζΗ 一 弟3頁 484221 五、發明說明(2) 兩大面積之散 晶圓完成積體 以導線架為承 率低、成本較 片尺寸封裝, 【發明目的及 本發明之 兩晶片係面對 連接裝置係具 晶片構裝體具 裝之功效。 依本發明 片,具有一正 第一焊墊並正 一背面,在第 向第一晶片; 熱面,然 電路並切 載體對個 南且一封 更無法提 概要】 主要目的 面結合並 有與晶片 有側向表 而此一晶片封裝結構60係必須在一 割為複數個個別之晶片之後,方能 別晶片進行個別封裝,不作制 裝體僅包含-晶片,同時不 晶 供作為晶圓級封裝方法製造。 在於提供一種雙晶片構裝體,利用 以 笔性連接裝置連接,且該電性 正面呈垂直之表面接點,使得該雙 面結合、晶片尺寸封裝及晶圓級封 之雙晶片構裝體,其主要包含有:第 面,在第一晶片之正面具有複數個 二晶片;第二晶片,具有一正面及 正面具有複數個第二焊墊並正面朝 電性連接裝置,電性連接第一焊墊 ’、有 裸路之表面接點,其中該表 片與第二晶片之正面。 又 面及 背 B曰 面朝向第 二晶片之 及至少一 面接點係垂直於第 【發明詳細說明】 如第3及4圖所示, 列舉之一雙晶片構裝體 矩形方塊體,其包含有 層1 4以及複數個電性連 有裸露於側邊之表面接 曰曰 ”係依本發明之第一具體實施例而 楚其係呈四方板塊狀,較佳為四方 弟—晶片11 、第二晶片12、— if;,3 ’其中電性連接裝置13具 131,其中該表面接點131係鱼第 484221 五、發明說明(3) 一晶片11與第二晶片12之正面ill、121垂直並形成於該雙 晶片構裝體1 〇之一側面,以供側向表面結合〔1 a t e r a 1 surface mounting〕,其構件詳述如下: 如第4圖所示,第一晶片1 1係具有一正面111及一背面 1 1 2 ’其正面1 11係朝向第二晶片1 2並形成有積體電路元件 〔integrated circuit element〕及複數個第一焊墊 113 〔bonding pad〕,第一焊墊113 一般為銅⑸或鋁M材質, 在本實施例中,第一晶片11係為記憶體晶片〔mem〇ry chip〕或其他,例如DRAM、SDRM、SRAM、f lasll、R〇M、 EPROM、Rambus DRAM或DDR memory等具有外端接點數小於❹ 一百之晶片,較佳為外端接點數在2 8〜8 0之DR AM記憶體晶 片0 如第4圖所示,第二晶片1 2係亦具有一 ....... 止由i Z i及一月 = 122,該正面121係朝向第一晶片u並形成有複數個第二 焊,123〔 bonding pad〕,在本實施例中,第二晶片12可 與第一晶片11相同而為一記憶體晶片,但第二晶片i 2之第 二烊墊123之電性功能並不一定與第一晶片n相同。 電性連接裝置1 3係用以電性連接第一晶片丨丨之第一 塾113與對應第二晶片12之第二焊墊123,其並具有一裸露 之表面接點131,其中該表面接點131係垂直於第一晶片u 與第=晶片12之正面m、121,以供側向表面結合,較佳 ,该複數個電性連接裝置丨3之表面接點丨3丨係形成於該雙 :!二ϊ裝體H之一側邊,在本實施例+,該複數個電性又連 衣13係為凸塊〔bump〕或取自於一導線架 484221 五、發明說明(4) 〔lead frame〕之複數個引指〔lead〕,為增加結合強度 及加強保護,在第一晶片11與第二晶片〗2之間另形成有一 絕緣性封膠層14 ’如環氧化合物等等’但仍須裸露出上述 電性連接裝置1 3之表面接點1 3 1。 因此,如第5圖所示,上述之雙晶片構裝體1〇可密集 地多個側向表面結合於一印刷電路板5〇,印刷電路板5〇上 具有焊料31〔 solder paste〕,以電性連接該雙晶片構裝 體10之表面接點131至印刷電路板5〇並以底墊32 " 〔underfill〕穩固結合該雙晶片構裝體1〇,該雙晶片構 裝體10具有較大面積之兩表面〔即第一晶片n之背面 與第一晶片1 2之背面1 2 2作為兩面散熱壁,故散熱性佳, 同時,該雙晶片構裝體1 0之一表面面積係接近第一晶片工工 或第二晶片12之最大表面面積,而成為雙晶片之晶片尺 封裝結構,故具有小尺寸封裝之功效。 、古=第6圖所不,其係為本發明之雙晶片構裝體1 〇之 造百先「提供一晶圓」〔wafer〕41,該晶圓一體 成里:稷數個第一晶片U ’再「提供另一曰曰曰圓」42,兮曰 圓一體成型有複數個第二晶片12, ^曰曰 43,使第一晶片U之正面lu朝 後'、,;口兩曰曰®」 並在第-晶片11盘第三日片19/^第一日日片12之正面’ 置13,以電性連接第3之 = 成上述之電性連接裝 後「切割該雙晶圓44 ϊ⑴及對應之第二焊塾m,最 10,亚使該電性連接裝置13具有至少一裸露之體 131,故本發明之雔曰κ Μ姑μ ^ 稞路之表面接點 又日日片構裝體1 〇亦具可供晶圓級封裝λζΗ First page 3 of 484221 V. Description of the invention (2) Two large-area scattered wafers are completed with a lead frame as a low-cost, low-cost package. [The purpose of the invention and the two wafers of the present invention are face-to-face connections The device is provided with a wafer structure. According to the present invention, the film has a first first pad and a first back, and the first wafer is in the first direction; the hot surface, but the circuit is parallel to the carrier, and the letter cannot be summarized. The wafer has a side table and this chip packaging structure 60 must be cut into a plurality of individual wafers before it can be individually packaged without the wafer. The package only contains-wafers, and it is not available for wafer level. Packaging method manufacturing. The purpose is to provide a dual-chip structure that is connected by a pen-type connection device and the electrical front surface is a vertical surface contact, so that the double-chip structure with double-sided bonding, chip size packaging and wafer-level sealing, It mainly includes: a first surface, which has a plurality of two wafers on the front surface of the first wafer; a second wafer, which has a front surface and a plurality of second solder pads on the front surface, and which faces the electrical connection device to electrically connect the first solder Pads, surface contacts with bare paths, where the watch face is on the front side of the second wafer. The surface and the back surface B are facing the second chip and at least one of the contacts is perpendicular to the [Detailed Description of the Invention] As shown in Figs. 3 and 4, one of the two-chip structure rectangular blocks is listed, which includes The layer 14 and a plurality of electrically connected surfaces exposed on the sides are said to be in the shape of a square plate according to the first embodiment of the present invention, preferably a square plate—a chip 11— Two wafers 12, — if ;, 3 'Among which are 13 electrical connection devices 131, in which the surface contacts 131 are fish 484221 V. Description of the invention (3) One wafer 11 is perpendicular to the front sides ill, 121 of the second wafer 12 And formed on one side of the dual-chip structure body 10 for side surface bonding [1 atera 1 surface mounting], the details of its components are as follows: As shown in FIG. 4, the first wafer 1 1 series has a The front side 111 and a back side 1 1 2 'The front side 1 11 faces the second wafer 12 and is formed with an integrated circuit element [integrated circuit element] and a plurality of first bonding pads 113 [bonding pad], the first bonding pad 113 Generally made of copper or aluminum M, in this embodiment, the first Chip 11 is a memory chip or other chip, such as DRAM, SDRM, SRAM, flasll, ROM, EPROM, Rambus DRAM, or DDR memory. The DR AM memory chip 0 with the number of external termination points in the range of 2 8 to 8 0 is preferred. As shown in FIG. 4, the second chip 12 also has one... Only by i Z i And January = 122, the front surface 121 faces the first wafer u and is formed with a plurality of second bonding pads, 123 [bonding pads]. In this embodiment, the second wafer 12 may be the same as the first wafer 11 and may be one. Memory chip, but the electrical function of the second pad 123 of the second chip i 2 is not necessarily the same as that of the first chip n. The electrical connection device 13 is used to electrically connect the first of the first chip 丨 丨塾 113 and the second solder pad 123 corresponding to the second wafer 12 have an exposed surface contact 131, wherein the surface contact 131 is perpendicular to the front faces m, 121 of the first wafer u and the third wafer 12, For lateral surface bonding, preferably, the surface contacts of the plurality of electrical connection devices 3 are formed on the side of one of the pairs: In this embodiment +, the plurality of electrical jumpsuits 13 are bumps or are taken from a lead frame 484221 V. Description of the invention (4) The plurality of lead fingers [lead] are To increase the bonding strength and strengthen the protection, an insulating sealant layer 14 'such as an epoxy compound, etc.' is formed between the first wafer 11 and the second wafer 2 but the above-mentioned electrical connection device 13 must still be exposed. Surface contacts 1 3 1. Therefore, as shown in FIG. 5, the above-mentioned dual-chip structure 10 can be densely bonded to a plurality of lateral surfaces on a printed circuit board 50, and the printed circuit board 50 has solder 31 [solder paste] on it, so that Electrically connect the surface contacts 131 of the dual-chip structure 10 to the printed circuit board 50 and securely couple the dual-chip structure 10 with a bottom pad 32 [underfill]. The dual-chip structure 10 has The two surfaces of a larger area [that is, the back surface of the first wafer n and the back surface 12 of the first wafer 12 are two-sided heat dissipation walls, so the heat dissipation is good. At the same time, one of the surface areas of the dual-chip structure 10 is It is close to the maximum surface area of the first wafer worker or the second wafer 12, and becomes a dual-chip wafer ruler packaging structure, so it has the effect of small-size packaging. , Gu = Figure 6 does not show, it is the dual wafer structure 10 of the present invention, the first one hundred "provide a wafer" [wafer] 41, the wafer is integrated into one: several first wafer U 'then "provide another circle" 42. The circle is integrally formed with a plurality of second wafers 12, and the 43 is so that the front side of the first wafer U faces backward. ",; ® ", and set 13 on the front side of the 11th plate of the third day of the 19th day of the wafer / 12 of the first day of the 12th day, and electrically connect the 3rd = to make the above electrical connection. 44 ϊ⑴ and the corresponding second welding 塾 m, the most 10, so that the electrical connection device 13 has at least one exposed body 131, so the surface contact of the Μ Μ μ μ ^ in the present invention is more and more The chip structure 1 is also available for wafer level packaging

第8頁 484221 五、發明說明(5) 〔wafer level package〕以降低成本之功效。 此外,如第7及8圖所示,其係依本發明之第二具體實 施例所列舉之另一雙晶片構裝體20,其用意在於說明本發 明之雙晶片構裝體不局限於其形狀、其構件之第一焊墊或 第二焊墊之分佈以及電性連接裝置之種類,如第7圖所 示,該雙晶片構裝體2 0係呈三角板塊狀並具有複數個形成 於侧邊之表面接點2 3 1,如第8圖所示,該雙晶片構裝體2 〇 係主要包含有第一晶片21、第二晶片22及一電路基板23, 其係以電路基板23作為本發明之電性連接裝置,並以黏膠 24貼固第一晶片21之正面211與第二晶片22之正面221 ,复 中該電路基板2 3可為多層之電路板,具有適當之導通孔一 232〔via hole〕、電路線2 33及表面接點231,經 焊料234將第一晶片21正面211之第一焊塾213與對應】、一又 晶片22正面221之第二焊塾2 2 3導接並傳輸至對庳之表一 點231,以供側向表面結合,曰·表面接 ^ f //ΊPage 8 484221 V. Description of the invention (5) [wafer level package] The effect of reducing costs. In addition, as shown in FIGS. 7 and 8, it is another dual-wafer structure 20 according to the second embodiment of the present invention, and is intended to explain that the dual-wafer structure of the present invention is not limited to the two-wafer structure. The shape, the distribution of the first or second pads of the component, and the type of the electrical connection device, as shown in FIG. 7, the dual-chip structure 20 is triangular plate-shaped and has a plurality of The surface contact 2 3 1 on the side, as shown in FIG. 8, the dual-wafer structure 20 mainly includes a first wafer 21, a second wafer 22, and a circuit substrate 23, which is based on the circuit substrate 23. As the electrical connection device of the present invention, the front surface 211 of the first chip 21 and the front surface 221 of the second chip 22 are fixed by the adhesive 24, and the circuit board 23 can be a multi-layer circuit board with proper conduction. A hole 232 [via hole], a circuit line 2 33 and a surface contact 231, the first welding pad 213 of the front surface 211 of the first wafer 21 and the corresponding one are soldered 234], and the second welding pad 2 of the front surface 221 of the wafer 22 2 3 leads and transfers to point 231 of the opposite face for lateral surface bonding, said surface connection ^ f / / Ί

亦具有晶片尺寸及可供晶圓級封樣袭地之功片構裝物 故本發明之保護範圍當視後附之申請專利範 為準’任何熟知此項技藝I,在不脫 、丄弋 :圍内所作之任何變化與㈣,均屬於本發明和It also has a wafer size and a wafer structure that can be used for wafer-level sealing. Therefore, the scope of protection of the present invention shall be subject to the attached patent application. 'Anyone who is familiar with this technology I, Any changes and modifications made within the scope belong to the present invention and

484221 圖式簡單說明 【圖式說明】 第1圖:美國專利第5,4 9 3,1 5 1號「半導體裝置、導線架 及其製造方法」之封裝結構剖視圖; 第2圖:美國專利第5,4 9 3,1 5 1號「半導體裝置、導線架 及其製造方法」之封裝結構側向結合於印刷電路 板之示意圖; 第3圖:依本發明之第一具體實施例,雙晶片構裝體之立 體圖; 第4圖:依本發明之第一具體實施例,雙晶片構裝體之剖 視圖, 第5圖:依本發明之第一具體實施例,多個雙晶片構裝體 結合於一印刷電路板之示意圖; 第6圖:依本發明之第一具體實施例,該雙晶片構裝體在 晶圓級封裝之製造流程圖; 第7圖:依本發明之第二具體實施例,雙晶片構裝體之立 體圖;及 第8圖:依本發明之第二具體實施例,雙晶片構裝體之剖 視圖。 【圖 號 說 明 ] 10 雙 晶 片 構裝體 11 第 一 晶 片 111 正 面 112背 面 113 第一 -焊 墊 12 第 二 晶 片 121 正 面 122 背 面 123 第二 二焊 墊484221 Brief Description of Drawings [Illustration of Drawings] Figure 1: Sectional view of the packaging structure of US Patent No. 5,4 9 3, 1 51 "Semiconductor Device, Lead Frame and Manufacturing Method"; Figure 2: US Patent No. 5, 4 9 3, 1 5 1 "Semiconductor device, lead frame and manufacturing method thereof" a schematic diagram of the side structure of the packaging structure is bonded to the printed circuit board; Figure 3: According to the first embodiment of the present invention, dual-chip A perspective view of the structure; FIG. 4: A cross-sectional view of a dual-wafer structure according to the first embodiment of the present invention, and FIG. 5: A plurality of dual-wafer structures are combined according to the first embodiment of the present invention Figure 6 is a schematic diagram of a printed circuit board; Figure 6: A flowchart of manufacturing the dual-chip structure in a wafer-level package according to the first embodiment of the present invention; Figure 7: A second embodiment according to the present invention Example, a perspective view of a dual-wafer structure; and FIG. 8: a sectional view of a dual-wafer structure according to a second embodiment of the present invention. [Illustration of the drawing number] 10 Double wafer structure 11 First wafer 111 Front face 112 Back face 113 First-pad 12 Second wafer 121 Front face 122 Back face 123 Second pad

484221 圖式簡單說明 13 電 性 連 接 裝 置 131 表 面 接 點 14 封 膠 體 20 雙 晶 片 構 裝 體 21 第 一 晶 片 211 正 面 212 背 面 213 第一焊 墊 22 第 二 晶 片 221 正 面 222 背 面 223 第二焊 塾 23 電 路 基 板 231 表 面 接 點 232 導 通 孔 233 電路線 234 焊 料 24 黏 膠 31 焊 料 32 底 墊 41 提 供 一 晶 圓 42 提 供 另 一晶 圓 43 結合兩晶 44 切 割 雙 晶 圓 結構 50 印 刷 電 路 板 60 封 裝 結 構 61 晶 片 62 焊 線 63 内引 指 64 外 引 指 65 裸 露 表 面 66 黏晶 部 67 封 膠 體484221 Brief description of the drawings 13 Electrical connection device 131 Surface contacts 14 Sealing body 20 Double-chip structure 21 First wafer 211 Front face 212 Back face 213 First pad 22 Second wafer 221 Front face 222 Back face 223 Second welding pad 23 Circuit board 231 Surface contact 232 Via hole 233 Circuit wire 234 Solder 24 Adhesive 31 Solder 32 Underlay 41 Provide one wafer 42 Provide another wafer 43 Combine two crystals 44 Cut dual wafer structure 50 Printed circuit board 60 Package structure 61 Wafer 62 Welding wire 63 Inner finger 64 Outer finger 65 Exposed surface 66 Sticky crystal part 67 Sealant

第11頁Page 11

Claims (1)

484221 六、申請專利範圍 【申請專利範 1、一種雙晶 圍】 片構裝體,其包含有: 第一晶片,具有一正面及一背面,在第一晶片之正面 具有 第 具有 至 複數個 二晶片 複數個 第一焊墊並正面朝向第二晶片; ,具有一正面及一背面,在第二晶片之正面 第二焊墊並正面朝向第一晶片;及 少一電性連接裝置,電性連接第一焊墊及對應之第 墊,且具有一裸露之表面接點,其中該表面接點係 第二晶片之正面。 第1項所述之雙晶片構裝體,其另包 〇 利範圍第1項所述之雙晶片構裝體,其中複 接裝置之表面接點係形成於該雙晶片構裝體 垂直於第一晶片與 利範圍 、如 含一 、如 數個 之一 、如 一晶 、如 雙晶 之最 、如 電性 、如 電性 、如 申請專 封膠體 申請專 電性連 側邊。 申請專 片與第 申請專 片構裝 大表面 申請專 連接裝 申請專 連接裝 申請專 利範圍第3項所述之雙晶片構裝體,其中第 二晶片均為一記憶體晶片。 利範圍第1項所述之雙晶片構裝體,其中該 體之一表面面積係接近第一晶片或第二晶片 面積。 利範圍 置係為 利範圍 置係為一凸塊。 利範圍第1項所述之雙晶片構裝體,其中該 第1項所述之雙晶片構裝體,其中該 一導線架之複數個引指。 第1項所述之雙晶片構裝體,其中該484221 VI. Scope of patent application [Patent for patent application 1, a double crystal enclosure] A sheet structure including: a first wafer having a front surface and a back surface, and a front surface of the first wafer having a first to a plurality of two The wafer has a plurality of first solder pads and the front side faces the second wafer; and has a front surface and a back surface, the second solder pads on the front side of the second wafer and the front side faces the first wafer; and one electrical connection device for electrical connection The first pad and the corresponding second pad have an exposed surface contact, wherein the surface contact is the front side of the second wafer. The dual wafer structure described in item 1 further includes the dual wafer structure described in item 1 in which the surface contacts of the multiplexing device are formed on the dual wafer structure perpendicular to the first wafer structure. A chip and a profit range, such as containing one, such as one of several, such as one crystal, such as the best of twin crystals, such as electrical, such as electrical, such as applying for a special sealant colloid, applying for exclusive electrical connection to the side. Apply for the special film and the first application for the construction of the large surface. Apply for the connection device. Apply for the connection connection. Apply for the dual-chip structure described in item 3 of the patent scope. The second chip is a memory chip. The dual-wafer structure according to the first item of the invention, wherein the surface area of one of the bodies is close to the area of the first wafer or the second wafer. The profit range is set as a bump. The two-chip structure according to the first item, wherein the two-chip structure according to the first item, wherein the lead frame has a plurality of lead fingers. The dual wafer structure according to item 1, wherein the 第12頁 、申5奮專利範圍 電性連接裝置係 9、 如申請專利範=電路基板。 晶片構裝體係形Ζί1項所述之雙晶片構裝體,其中雙 10、 如申請專利二;:方板塊狀。 晶片構裝體係形h項所述之雙晶片構裝體,其中雙 1 1、一種雔a 成為三角板塊狀。 片構裝體體之晶圓級封褒方法,其中該雙晶 -晶片之正面具有J ::其具有一正面及-背面,在第 ,·第二晶片,星亡數個第一焊墊並正面朝向第二晶 ^有一正面及一背面,在第二晶片之正 片 面具有複數個第二捏 , > V — W π〜 電性連接裝置,Γ f墊亚正面朝向第一晶片;及至少一 且具有一^霖$ :生連接第一焊墊及對應之第二焊墊, 提:一=之表面接點,其步驟為: 提供另一晶圓體;型有複數個第-晶片; 結合兩晶圓,使第Γ ^ 一肢成型有複數個第二晶片; % :’並在第-晶片與第第二晶片之正 裝置,以電性連接第片1間形成至少—電性連 切割該雙晶圓,雜墊及對應之第二焊墊; < 該電性連接裝為複數個雙晶片構裝體,並使 12、如由4畜 ^有至少一裸露之表面接點。 更 級封裝方\專二= 或電路基板。 电性連接裝置係選自導線架,凸 1 塊Page 12 Scope of the patent application for electrical appliances 5 、 If the patent application scope = circuit board. The wafer structure system is a dual-wafer structure as described in item 1, wherein the double 10, as in the application for patent two ;: square plate. The wafer structure system is a dual-wafer structure as described in item h, in which the double 11 and one 雔 a are triangular plate-shaped. A wafer-level encapsulation method for a wafer structure, wherein the front surface of the twin-crystal wafer has J :: It has a front surface and a back surface. On the first and second wafers, several first pads are destroyed and The front side faces the second crystal. There is a front side and a back side, there are a plurality of second pinches on the positive side of the second wafer, > V — W π ~ electrical connection device, the front side of the Γ f pad faces the first wafer; The first and second pads are connected to each other, and the first pad and the corresponding second pad are connected, and the steps are as follows: providing another wafer body; a plurality of first wafers; Combining two wafers, forming a plurality of second wafers on the limb of the Γ ^^;%: 'and forming at least-electrical connection between the first wafer and the second wafer by electrically connecting the first wafer to the first wafer. Cut the dual wafer, the miscellaneous pad and the corresponding second solder pad; < The electrical connection is mounted as a plurality of dual wafer structures, and there are at least one exposed surface contact, such as from 4 to 4 animals. Upgrade package side \ Special two = or circuit board. The electrical connection device is selected from the lead frame, and is convex 1 piece
TW90104968A 2001-03-01 2001-03-01 A dual chip package and the wafer level packaging method TW484221B (en)

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