TWI745860B - 基板處理方法以及基板處理裝置 - Google Patents

基板處理方法以及基板處理裝置 Download PDF

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Publication number
TWI745860B
TWI745860B TW109104339A TW109104339A TWI745860B TW I745860 B TWI745860 B TW I745860B TW 109104339 A TW109104339 A TW 109104339A TW 109104339 A TW109104339 A TW 109104339A TW I745860 B TWI745860 B TW I745860B
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Taiwan
Prior art keywords
substrate
ultraviolet
oxygen concentration
processing space
gas
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TW109104339A
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English (en)
Chinese (zh)
Other versions
TW202040671A (zh
Inventor
中野佑太
田中孝佳
高橋弘明
岩田智巳
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日商斯庫林集團股份有限公司
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Publication of TW202040671A publication Critical patent/TW202040671A/zh
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Publication of TWI745860B publication Critical patent/TWI745860B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW109104339A 2019-03-13 2020-02-12 基板處理方法以及基板處理裝置 TWI745860B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-045516 2019-03-13
JP2019045516A JP7242354B2 (ja) 2019-03-13 2019-03-13 基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
TW202040671A TW202040671A (zh) 2020-11-01
TWI745860B true TWI745860B (zh) 2021-11-11

Family

ID=72427268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109104339A TWI745860B (zh) 2019-03-13 2020-02-12 基板處理方法以及基板處理裝置

Country Status (5)

Country Link
JP (1) JP7242354B2 (ko)
KR (1) KR102654154B1 (ko)
CN (1) CN113544820A (ko)
TW (1) TWI745860B (ko)
WO (1) WO2020183920A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI805354B (zh) * 2021-06-07 2023-06-11 日商斯庫林集團股份有限公司 基板處理方法以及基板處理裝置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW419715B (en) * 1997-03-28 2001-01-21 Tokyo Electron Ltd Substrate treating method and apparatus
TW442849B (en) * 1998-03-27 2001-06-23 Nippon Electric Co Process and apparatus for treating a substrate
JP2004162124A (ja) * 2002-11-13 2004-06-10 Shibaura Mechatronics Corp 基板の処理装置及び処理方法
TW201635376A (zh) * 2014-12-26 2016-10-01 東京威力科創股份有限公司 基板處理方法、記憶媒體及加熱裝置
TW201703113A (zh) * 2015-03-25 2017-01-16 思可林集團股份有限公司 曝光裝置、基板處理裝置、基板的曝光方法以及基板處理方法
TW201832305A (zh) * 2016-12-08 2018-09-01 日商東京威力科創股份有限公司 基板處理方法及熱處理裝置
JP2018166183A (ja) * 2017-03-28 2018-10-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法および紫外線照射手段の選択方法
JP2018190895A (ja) * 2017-05-10 2018-11-29 東京エレクトロン株式会社 液処理方法、液処理装置、及び記憶媒体
TW201842408A (zh) * 2017-03-01 2018-12-01 日商斯庫林集團股份有限公司 曝光裝置、基板處理裝置、基板之曝光方法及基板處理方法
TW201842537A (zh) * 2016-12-28 2018-12-01 日商斯庫林集團股份有限公司 基板處理裝置、基板處理方法及基板處理系統

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015472A (ja) * 1999-06-28 2001-01-19 Hoya Schott Kk 紫外光照射方法及び装置
JP2004119942A (ja) * 2002-09-30 2004-04-15 Japan Storage Battery Co Ltd 紫外線照射装置
JP5371854B2 (ja) 2010-03-26 2013-12-18 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP6613983B2 (ja) * 2016-03-23 2019-12-04 Ｊｓｒ株式会社 基板処理方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW419715B (en) * 1997-03-28 2001-01-21 Tokyo Electron Ltd Substrate treating method and apparatus
TW442849B (en) * 1998-03-27 2001-06-23 Nippon Electric Co Process and apparatus for treating a substrate
JP2004162124A (ja) * 2002-11-13 2004-06-10 Shibaura Mechatronics Corp 基板の処理装置及び処理方法
TW201635376A (zh) * 2014-12-26 2016-10-01 東京威力科創股份有限公司 基板處理方法、記憶媒體及加熱裝置
TW201703113A (zh) * 2015-03-25 2017-01-16 思可林集團股份有限公司 曝光裝置、基板處理裝置、基板的曝光方法以及基板處理方法
TW201832305A (zh) * 2016-12-08 2018-09-01 日商東京威力科創股份有限公司 基板處理方法及熱處理裝置
TW201842537A (zh) * 2016-12-28 2018-12-01 日商斯庫林集團股份有限公司 基板處理裝置、基板處理方法及基板處理系統
TW201842408A (zh) * 2017-03-01 2018-12-01 日商斯庫林集團股份有限公司 曝光裝置、基板處理裝置、基板之曝光方法及基板處理方法
JP2018166183A (ja) * 2017-03-28 2018-10-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法および紫外線照射手段の選択方法
JP2018190895A (ja) * 2017-05-10 2018-11-29 東京エレクトロン株式会社 液処理方法、液処理装置、及び記憶媒体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI805354B (zh) * 2021-06-07 2023-06-11 日商斯庫林集團股份有限公司 基板處理方法以及基板處理裝置

Also Published As

Publication number Publication date
JP2020150098A (ja) 2020-09-17
KR102654154B1 (ko) 2024-04-03
CN113544820A (zh) 2021-10-22
JP7242354B2 (ja) 2023-03-20
KR20210124446A (ko) 2021-10-14
TW202040671A (zh) 2020-11-01
WO2020183920A1 (ja) 2020-09-17

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