TWI743630B - 錠化環氧樹脂組合物和用其包封的半導體裝置 - Google Patents

錠化環氧樹脂組合物和用其包封的半導體裝置 Download PDF

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TWI743630B
TWI743630B TW108146613A TW108146613A TWI743630B TW I743630 B TWI743630 B TW I743630B TW 108146613 A TW108146613 A TW 108146613A TW 108146613 A TW108146613 A TW 108146613A TW I743630 B TWI743630 B TW I743630B
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epoxy resin
ingot
resin composition
weight
encapsulation
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TW108146613A
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TW202024226A (zh
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金相珍
金相均
嚴泰信
李東桓
李英俊
趙鏞寒
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南韓商三星Ｓｄｉ股份有限公司
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Abstract

本發明提供一種用於半導體裝置的包封的錠化環氧樹脂組合物和使用錠化環氧樹脂組合物來包封的半導體裝置。錠化環氧樹脂組合物滿足以下要求：（i）具有如通過使用ASTM標準篩的篩分析所測量的大於或等於0.1毫米且小於2.8毫米的直徑和大於或等於0.1毫米且小於2.8毫米的高度的錠劑的比例是約97重量%；（ii）錠劑具有大於約1.7克/毫升的填充密度；以及（iii）錠劑的填充密度與固化密度的比在約0.6到約0.87範圍內。

Description

錠化環氧樹脂組合物和用其包封的半導體裝置
本發明涉及一種用於半導體裝置的包封的錠化環氧樹脂組合物和使用所述錠化環氧樹脂組合物來包封的半導體裝置。
隨著近來電子件市場的焦點已轉移到以智慧型手機和平板電腦為代表的行動裝置，近期研究已聚焦在研發更小、更輕且性能更高的行動裝置上。因此，正在研發更薄且高度積體的半導體裝置以便實施符合更高層級堆疊、更高性能、更大規模積體、多功能性以及纖薄（slimness）的趨勢的行動裝置。當將這種高度堆疊且高度積體的半導體裝置包封在小且薄的半導體封裝中時，可能歸因於在半導體裝置的操作期間所產生的熱而更頻繁地發生封裝的故障和開裂。為了解決這一問題，已使用散熱片。然而，這種散熱片只可用於一些半導體封裝且需要額外製程，導致低生產率和高成本。因此，存在對用於半導體裝置的包封的具有高熱導率的環氧樹脂組合物的需要。
跟隨這一趨勢，正在研發通過壓縮模製來包封半導體裝置的方法。壓縮模製是對模具中的物品進行模製的技術，且近來已歸因於即使在多堆疊半導體裝置的包封時也抑制空隙產生的能力而吸引關注。在壓縮模製時，可將用於半導體裝置的包封的環氧樹脂組合物以膜或薄片形式引入到模具中。然而，鑒於環氧樹脂組合物的可模製性、可流動性以及類似物，通常以粉末或細粒形式引入組合物。然而，粉末顆粒或細粒之間的大小存在一定程度的差異，導致半導體封裝的電線偏移（wire sweep）和/或翹曲。
常規上，已採用離心粉碎技術和熱切割技術來製備用於半導體裝置的包封的環氧樹脂組合物。然而，這些方法難以製備需要適合於通過壓縮模製來包封半導體裝置的高熱導率的環氧樹脂組合物。
本發明的一個方面是提供一種用於半導體裝置的包封的錠化環氧樹脂組合物，所述錠化環氧樹脂組合物具有高熱導率。
本發明的另一方面是提供一種用於半導體裝置的包封的錠化環氧樹脂組合物，可防止所述錠化環氧樹脂組合物在通過壓縮模製來包封半導體裝置時散射和/或粘附到壓縮模製儀器，從而減少對壓縮模製儀器的污染。
本發明的又一方面是提供一種用於半導體裝置的包封的錠化環氧樹脂組合物，所述錠化環氧樹脂組合物可顯著減小通過壓縮模製來包封半導體裝置時的電線偏移。
根據本發明的一個方面，提供一種用於半導體裝置的包封的錠化環氧樹脂組合物。
1.所述錠化環氧樹脂組合物滿足以下要求：（i）具有如通過使用ASTM標準篩的篩分析所測量的大於或等於0.1毫米且小於2.8毫米的直徑和大於或等於0.1毫米且小於2.8毫米的高度的錠劑的比例是約97重量%或大於97重量%；（ii）錠劑具有大於約1.7克/毫升的填充密度；以及（iii）錠劑的填充密度與固化密度的比在約0.6到約0.87範圍內。
2.在實施例1中，所述錠劑可具有圓柱形形狀。
3.在實施例1或實施例2中，所述錠化環氧樹脂組合物可包含無機填料，所述無機填料包含選自以下群組的至少一種：二氧化矽、氧化鋁、氮化鋁、碳酸鈣、碳酸鎂、氧化鎂、粘土、滑石、矽酸鈣、氧化鈦、氧化銻、玻璃纖維以及氮化硼。
4.在實施例3中，所述無機填料可以70重量%到99重量%的量存在於錠化環氧樹脂組合物中。
5.在實施例3或實施例4中，所述二氧化矽可以約90重量%或小於90重量%的量存在於無機填料中。
6.在實施例3到實施例5任一項中，所述氮化鋁可以約50重量%或小於50重量%的量存在於無機填料中。
7.在實施例3到實施例6任一項中，所述無機填料可具有約3微米到約15微米的平均粒徑（D50）。
8.在實施例3到實施例7任一項中，所述氧化鋁可以約10重量%到約100重量%的量存在於無機填料中。
9.在實施例3到實施例8任一項中，所述氧化鋁可以約75重量%到約98重量%的量存在於錠化環氧樹脂組合物中。
10.在實施例3到實施例9任一項中，所述錠化環氧樹脂組合物可包含氧化鋁與二氧化矽的混合物作為無機填料。
11.在實施例10中，所述氧化鋁與二氧化矽的混合物可以約75重量%到約98重量%的量存在於錠化環氧樹脂組合物中。
12.在實施例3到實施例9任一項中，所述錠化環氧樹脂組合物可包含二氧化矽與氮化鋁的混合物作為無機填料。
13.在實施例12中，所述二氧化矽與氮化鋁的混合物可以約75重量%到約98重量%的量存在於錠化環氧樹脂組合物中。
14.在實施例1到實施例13任一項中，所述錠劑可具有約1.9克/毫升到約4克/毫升的固化密度。
15.在實施例1到實施例14任一項中，所述錠化環氧樹脂組合物可通過壓縮錠化來製備。
根據本發明的另一方面，提供一種使用根據本發明的用於半導體裝置的包封的錠化環氧樹脂組合物來包封的半導體裝置。
本發明提供一種用於半導體裝置的包封的錠化環氧樹脂組合物，所述錠化環氧樹脂組合物具有高熱導率。
本發明提供一種用於半導體裝置的包封的錠化環氧樹脂組合物，可防止所述錠化環氧樹脂組合物在通過壓縮模製來包封半導體裝置時散射和/或粘附到壓縮模製儀器，從而減少對壓縮模製儀器的污染。
本發明提供一種用於半導體裝置的包封的錠化環氧樹脂組合物，所述錠化環氧樹脂組合物可顯著減小通過壓縮模製來包封半導體裝置時的電線偏移。
下文中將參考附圖詳細描述本發明的示範性實施例。以下實施例通過實例提供，以便將本發明的精神完全傳達給本發明所涉及的領域的技術人員。因此，本發明不限於本文中所公開的實施例並且也可以不同形式實施。
如本文中所使用，術語“錠劑”是指以下形式：具有第一表面、第二表面以及使第一表面連接到第二表面的側表面，第一表面與第二表面相對。在一個實施例中，第一表面和第二表面可以各自是平坦表面且側表面可以是一個彎曲表面。在一個實施例中，錠劑可以是圓柱體。參考圖1，錠劑可以是圓柱體，其中圓柱體的第一表面（或第二表面）可具有預定直徑D，且圓柱體的側表面可具有預定高度H。在本發明中，“錠劑”也可具有直徑D小於或等於高度H的形狀，以及直徑D大於高度H的形狀。
如本文中所使用，“寬高比”可指高度H與直徑D的比（高度H/直徑D）。
如本文中所使用，術語“用於半導體裝置的包封的錠化環氧樹脂組合物”可指用於半導體裝置的包封的環氧樹脂組合物，其中錠劑的比例是98重量%或大於98重量%，例如99重量%或大於99重量%。
如本文中所使用，“填充密度”是在具有如通過使用ASTM標準篩的篩分析所測量的大於或等於0.1毫米且小於2.8毫米的大小的錠劑上測量的值。具體來說，秤取具有大於或等於0.1毫米且小於2.8毫米的大小的錠劑中的一些以獲得樣本，隨後使用電子秤來測量樣本的重量W。接著，將矽酮表面活性劑引入到一半填充有水的50毫升刻度量筒中，隨後測量量筒中的初始體積V1。接著，將秤取的錠劑引入到量筒中，隨後測量量筒中的最終體積V2。接著，根據等式1計算出錠劑的填充密度（單位：克/毫升）。這裡，在體積測量之前，搖晃量筒以去除錠劑之間的空氣，且可通過對五個測量值求平均來計算出填充密度： 填充密度（克/毫升）=W/（V2-V1）           ---（1）
如本文中所使用，可通過一程序來計算出“固化密度”，在所述程序中，在175℃±5℃模具溫度、7 MPa注入壓力以及120秒固化時間的條件下在傳送模製機中將用於半導體裝置的包封的環氧樹脂組合物模製成具有50毫米×3毫米（直徑×厚度）大小的圓盤，隨後在175℃下後模具固化（post mold curing；PMC）4小時，且接著測量圓盤的質量和體積，隨後計算質量與體積的比（質量/體積，單位：克/毫升）。
如本文中所使用，“熱導率”是根據ASTM D5470在25℃下在由用於半導體裝置的包封的環氧樹脂組合物形成的試樣上測量的值。
如本文中為了表示具體數值範圍所使用，表述“X到Y”意味著“大於或等於X且小於或等於Y”。
根據本發明的一個實施例的用於半導體裝置的包封的錠化環氧樹脂組合物滿足所有以下要求（i）、（ii）以及（iii）。當滿足所有（i）、（ii）以及（iii）時，錠化環氧樹脂組合物可減小因半導體裝置的壓縮模製時精細顆粒的散射所致的對壓縮模製儀器（例如，振動進料器和類似物）的污染的可能性；顯著減小壓縮模製時的電線偏移；且具有顯著提高的熱導率。在一個實施例中，根據本發明的錠化環氧樹脂組合物可具有2瓦/米度或大於2瓦/米度（例如2瓦/米度到10瓦/米度，例如2瓦/米度到7.5瓦/米度）的熱導率。在這一範圍內，使用錠化環氧樹脂組合物來包封的半導體裝置可具有較高熱耗散，從而減少因在半導體裝置的操作期間所產生的熱所致的半導體封裝的故障和開裂。
特定來說，本發明的發明人發現，未能滿足（i）、（ii）以及（iii）中的一或多個的環氧樹脂組合物雖然以與本發明中相同的量包含相同類型的無機填料，但無法實現所需效果（也就是說，提高熱導率、減小電線偏移以及減小因精細顆粒的散射所致的對壓縮模製儀器的污染的可能性）中的任一個。 （i）具有如通過使用ASTM標準篩的篩分析所測量的大於或等於0.1毫米且小於2.8毫米的直徑和大於或等於0.1毫米且小於2.8毫米的高度的錠劑的比例是約97重量%或大於97重量%。 （ii）錠劑具有大於約1.7克/毫升的填充密度。 （iii）錠劑的填充密度與交聯密度的比在約0.6到約0.87範圍內。
在根據本發明的錠化環氧樹脂組合物中，具有如通過使用ASTM標準篩的篩分析所測量的大於或等於0.1毫米且小於2.8毫米的直徑和大於或等於0.1毫米且小於2.8毫米的高度的錠劑的比例是97重量%或大於97重量%。如果具有小於0.1毫米的直徑或小於0.1毫米的高度的錠劑的比例超出3重量%，那麼精細顆粒的含量較高且精細顆粒更有可能粘附到壓縮模製儀器，導致對儀器的污染。如果具有2.8毫米或大於2.8毫米的直徑和2.8毫米或大於2.8毫米的高度的錠劑的比例超出3重量%，那麼錠化環氧樹脂組合物可能容易在傳送期間破裂，從而導致對壓縮模製儀器的污染，且很可能在秤取壓縮模製儀器中的錠劑時因錠化環氧樹脂組合物的非均勻性而出現誤差，導致半導體封裝的厚度的偏差且因此因半導體封裝的翹曲的偏差而導致缺陷。在一個實施例中，具有大於或等於0.1毫米且小於2.8毫米的直徑和大於或等於0.1毫米且小於2.8毫米的高度的錠劑的比例可在按錠化環氧樹脂組合物的總重量計約97重量%到約99重量%範圍內。
在使用ASTM標準篩的篩分析中，0.1毫米對應於ASTM第140號篩目且2.8毫米對應於ASTM第7號篩目。
根據本發明的錠化環氧樹脂組合物具有大於約1.7克/毫升的填充密度。如果填充密度小於或等於約1.7克/毫升，那麼錠化環氧樹脂組合物可能具有低熱導率且因此使用錠化環氧樹脂來包封的半導體裝置可能具有不良熱耗散，導致因在半導體裝置的操作期間所產生的熱所致的半導體封裝的故障和開裂增加。測量填充密度的方法如上文所描述。優選的是，錠化環氧樹脂組合物具有大於約1.7克/毫升且小於或等於約3.2克/毫升、更優選地約1.71克/毫升到約3.2克/毫升、再更優選地約1.71克/毫升到約3克/毫升的填充密度。
在根據本發明的錠化環氧樹脂組合物中，填充密度與固化密度的比（填充密度/交聯密度）可在約0.6到約0.87範圍內。如果所述比小於約0.6，那麼錠化環氧樹脂組合物可能在壓縮模製時具有不良可熔性和不良相容性。如果所述比超出約0.87，那麼錠化環氧樹脂組合物可能具有幾乎未提高的熱導率或可能導致電線偏移增大。
在一個實施例中，錠化環氧樹脂組合物可具有約1.9克/毫升到約4克/毫升、具體來說約1.95克/毫升到約3.5克/毫升、更具體來說約1.95克/毫升到約3.2克/毫升的固化密度。在這一範圍內，在壓縮模製時，錠化環氧樹脂組合物可具有良好可熔性和良好相容性，同時減少電線偏移的發生和空隙的產生。測量固化密度的方法如上文所描述。
在根據本發明的錠化環氧樹脂組合物中，錠劑可具有約0.1到約5、具體來說約0.25到約4的寬高比。在這一範圍內，錠化環氧樹脂組合物可減小半導體封裝的厚度的偏差，從而減小半導體封裝的翹曲的偏差。
在根據本發明的錠化環氧樹脂組合物中，錠劑可具有圓柱形形狀。
根據本發明的用於半導體裝置的包封的錠化環氧樹脂組合物可通過下文所描述的壓縮錠化來製備。可使用壓片機來進行壓縮錠化。舉例來說，用於半導體裝置的包封的環氧樹脂組合物可在90℃到110℃下在連續捏合機中熔融捏合，隨後冷卻和粉碎，從而製備呈粉末形式的組合物。接著，將製備的初步粉末狀組合物引入到壓片機的進料器中，隨後通過朝下移動上衝床且接著朝上移動下衝床來壓縮壓模中的粉末狀組合物，從而製備呈錠劑形式的組合物。這裡，可在調整通過朝下移動上衝床和朝上移動下衝床來施加於粉末狀組合物的壓縮負載、壓模的直徑、壓模的高度以及類似物的情況下製備用於半導體裝置的包封的錠化環氧樹脂組合物。
在一個實施例中，壓縮負載可取決於壓模的直徑、壓模的高度、壓模中的粉末狀組合物的高度和寬度來變化，且可在0.1噸到1噸範圍內。在一個實施例中，壓模可具有大於或等於0.1毫米且小於2.8毫米的直徑和大於或等於0.1毫米且小於2.8毫米的高度。
常規上，已知離心粉碎為用以製備用於半導體裝置的包封的環氧樹脂組合物的方法。在離心粉碎中，轉子的離心力迫使初步組合物穿過將要模製成細粒的具有均勻孔隙大小的衝孔網。然而，由於初步組合物在模製之前經歷熔融捏合，所以不大可能在壓縮模製時正確地實現通過離心粉碎來獲得的組合物的熔融，從而導致歸因於因細粒之間的大小差異所致的半導體封裝的電線偏移和翹曲的缺陷。
此外，還已知熱切割為用以製備用於半導體裝置的包封的環氧樹脂組合物的方法。在熱切割中，熔融捏合的初步環氧樹脂組合物經歷切割。因此，不大可能在壓縮模製時正確地實現通過熱切割來獲得的組合物的熔融，從而導致歸因於電線偏移的缺陷。
現在，將描述根據本發明的用於半導體裝置的包封的錠化環氧樹脂組合物的每一組分。
錠化環氧樹脂組合物可包含：環氧樹脂；固化劑；固化催化劑；以及無機填料。
環氧樹脂可以是每分子具有至少兩個環氧基的單體、寡聚物、聚合物以及類似物的混合物。舉例來說，環氧樹脂可包含雙酚環氧樹脂（例如雙酚A環氧樹脂和雙酚F環氧樹脂）、苯酚酚醛清漆環氧樹脂、三級丁基兒茶酚環氧樹脂、萘環氧樹脂、縮水甘油基胺環氧樹脂、苯酚芳烷基環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯環氧樹脂、線性脂族環氧樹脂、脂環族環氧樹脂、雜環環氧樹脂、含螺環的環氧樹脂、環己烷二甲醇環氧樹脂、鹵化環氧樹脂以及聯苯酚醛清漆環氧樹脂。這些可單獨使用或以其混合物形式使用。
固化劑可非限制性地包含能夠固化環氧樹脂的任何固化劑。固化劑的實例可包含：多元酚化合物，例如苯酚芳烷基酚醛樹脂、苯酚酚醛清漆酚醛樹脂、聯苯酚醛清漆酚醛樹脂、新酚樹脂酚醛樹脂、甲酚酚醛清漆酚醛樹脂、萘酚酚醛樹脂、萜烯酚醛樹脂、多官能酚醛樹脂、二環戊二烯酚醛樹脂、由雙酚A與甲階酚醛樹脂、三(羥基苯基)甲烷以及二羥基聯苯合成的酚醛清漆酚醛樹脂；酸酐，例如順丁烯二酸酐和鄰苯二甲酸酐；以及芳族胺，例如間苯二胺、二胺基二苯基甲烷以及二胺基二苯碸。
固化催化劑可非限制性地包含能夠促進環氧樹脂的環氧基與固化劑之間的固化反應的任何固化催化劑。舉例來說，固化催化劑可包含三級胺、有機金屬化合物、有機磷化合物、咪唑以及硼化合物。三級胺的實例包含苯甲基二甲胺、三乙醇胺、三亞乙基二胺、二乙基胺基乙醇、三(二甲基胺基甲基)苯酚、2-2-(二甲基胺基甲基)苯酚、2,4,6-三(二胺基甲基)苯酚以及己酸三-2-乙酯。有機金屬化合物的實例包含乙醯丙酮酸鉻、乙醯丙酮酸鋅以及乙醯丙酮酸鎳。有機磷化合物的實例包含三(4-甲氧苯基)膦、三苯基膦、三苯基硼烷以及三苯基膦-1,4-苯醌加合物。咪唑的實例包含2-甲基咪唑、2-苯基咪唑、2-胺基咪唑、2-甲基-1-乙烯基咪唑、2-乙基-4-甲基咪唑以及2-十七烷基咪唑。硼化合物的實例包含三苯基膦四苯基硼酸鹽、四苯基硼鹽、三氟硼烷-正己胺、三氟硼烷單乙胺、四氟硼烷三乙胺以及四氟硼烷胺。除這些化合物之外，可將1,5-二氮雜二環[4.3.0]壬-5-烯（1,5-diazabicyclo[4.3.0]non-5-ene；DBN）、1,8-二氮雜二環[5.4.0]十一-7-烯（1,8-diazabicyclo[5.4.0]undec-7-ene；DBU）以及其苯酚酚醛清漆樹脂鹽用作固化催化劑。另外，也可將通過與環氧樹脂或固化劑的預反應來獲得的加合物用作固化催化劑。
無機填料可包含在用於半導體裝置的包封的環氧樹脂組合物中通常使用的無機填料。
在一個實施例中，無機填料可包含選自以下群組的至少一種：二氧化矽、氧化鋁、氮化鋁、碳酸鈣、碳酸鎂、氧化鎂、粘土、滑石、矽酸鈣、氧化鈦、氧化銻、玻璃纖維以及氮化硼。優選的是，無機填料包含氧化鋁以提高錠化環氧樹脂組合物的熱導率。前述無機填料可單獨使用或以其混合物形式使用。當將兩種或大於兩種類型的無機填料的混合物用作無機填料時，所述兩種或大於兩種類型的無機填料可具有相同或不同的平均粒徑（D50）。優選的是，所述兩種或大於兩種類型的無機填料具有不同的平均粒徑（D50）。
在一個實施例中，氧化鋁可作為無機填料單獨使用。具體來說，氧化鋁可以約70重量%到約99重量%、具體來說約75重量%到約98重量%的量存在於錠化環氧樹脂組合物中。在這一範圍內，無機填料可在不改變本發明的所需效果的情況下提高錠化環氧樹脂組合物的熱導率。
在另一實施例中，可將氧化鋁與二氧化矽的混合物用作無機填料。具體來說，氧化鋁與二氧化矽的混合物可以約70重量%到約99重量%、具體來說約75重量%到約98重量%的量存在於錠化環氧樹脂組合物中。在這一範圍內，無機填料可在不改變本發明的所需效果的情況下提高錠化環氧樹脂組合物的熱導率。
在又一實施例中，可將氧化鋁與氮化鋁的混合物用作無機填料。具體來說，氧化鋁與氮化鋁的混合物可以約70重量%到約99重量%、具體來說約75重量%到約98重量%的量存在於錠化環氧樹脂組合物中。
在再一實施例中，可將二氧化矽與氮化鋁的混合物用作無機填料。具體來說，二氧化矽與氮化鋁的混合物可以約70重量%到約99重量%、具體來說約75重量%到約98重量%的量存在於錠化環氧樹脂組合物中。在這一範圍內，無機填料可在不改變本發明的所需效果的情況下提高錠化環氧樹脂組合物的熱導率。
在一個實施例中，無機填料中的氧化鋁的含量可以是約10重量%或大於10重量%，具體來說從約10重量%到約100重量%。在這一範圍內，無機填料可在不改變本發明的所需效果的情況下提高錠化環氧樹脂組合物的熱導率。
在一個實施例中，無機填料中的二氧化矽的含量可以是約90重量%或小於90重量%，具體來說從約10重量%到約90重量%。在這一範圍內，無機填料可在不改變本發明的所需效果的情況下提高錠化環氧樹脂組合物的熱導率。
在一個實施例中，無機填料中的氮化鋁的含量可以是約50重量%或小於50重量%，具體來說約30重量%或小於30重量%，更具體來說約5重量%到約30重量%。在這一範圍內，無機填料可在不改變本發明的所需效果的情況下提高錠化環氧樹脂組合物的熱導率。
無機填料可具有約3微米到約15微米、具體來說約5微米到約15微米、更具體來說約5微米到約12微米的平均粒徑（D50）。在這一範圍內，無機填料可提高環氧樹脂組合物的流動性。本文中，平均粒徑是指以本領域的技術人員熟知的D50為代表的平均粒徑，且意味著無機填料的基於重量的粒度分佈的中位值。
錠化環氧樹脂組合物可進一步包含典型添加劑。在一個實施例中，添加劑可包含選自以下群組的至少一種：偶合劑、脫模劑、應力鬆弛劑、交聯強化劑、流平劑以及著色劑。偶合劑可包含選自環氧矽烷、胺基矽烷、巰基矽烷、烷基矽烷以及烷氧基矽烷的群組的至少一種，但不限於此。脫模劑可包含選自以下群組的至少一種：石蠟、酯蠟、高級脂肪酸、高級脂肪酸的金屬鹽、天然脂肪酸以及天然脂肪酸的金屬鹽。應力鬆弛劑可包含選自改性矽酮油、矽酮彈性體、矽酮粉末以及矽酮樹脂的群組的至少一種，但不限於此。著色劑可包含碳黑和類似物。
錠化環氧樹脂組合物可包含：約0.5重量%到約20重量%、具體來說約3重量%到約15重量%的環氧樹脂；約0.1重量%到約13重量%、具體來說約0.1重量%到約10重量%的固化劑；約70重量%到約99重量%、舉例來說，約75重量%到約98重量%的無機填料；約0.01重量%到約2重量%、具體來說約0.02重量%到1.5重量%的固化催化劑；以及約0.1重量%到約10重量%的添加劑。
根據本發明的半導體裝置可使用根據本發明的用於半導體裝置的包封的錠化環氧樹脂組合物通過壓縮模製來包封。半導體裝置可包含積體電路、電晶體、可控矽、二極管、固態成像裝置以及類似物。
接下來，將參考圖2（a）及圖2（b）描述使用用於半導體裝置的包封的錠化環氧樹脂組合物通過壓縮模製來包封半導體裝置的方法。參考圖2（a），經由振動進料器2將錠化環氧樹脂組合物1引入到組合物進料容器3中。這裡，振動進料器2可以恆定速率或可變速率振動，以便以恆定進料速率將預定量的錠化環氧樹脂組合物引入到組合物進料容器3中。參考圖2（b），組合物進料容器3具有例如擋閘4的裝置，使得可通過擋閘4的移動將組合物供應容器3中的錠化環氧樹脂組合物1立即引入到下部模腔5中。具有安裝於其上的半導體裝置6和類似物的上部基板7壓靠下部模腔5。隨著錠化環氧樹脂組合物1熔融以及具有安裝於其上的半導體元件6和類似物的上部基板7朝下移動，半導體裝置和類似物逐漸浸漬到熔融物中，從而完成壓縮模製。
圖3是通過壓縮模製來包封的示範性半導體裝置的視圖。參考圖3，通過由錠化環氧樹脂組合物形成的包封體102來包封半導體裝置101。半導體裝置101經由裸片接合材料104緊固到裸片墊103。半導體元件101的電極墊經由電線106連接到引線框105。由於通過由根據本發明的錠化環氧樹脂組合物形成的包封體102來包封根據本發明的半導體裝置，所以半導體封裝的厚度T的偏差較小且因此半導體封裝的翹曲的偏差較小。
接下來，將參考一些實例更詳細地描述本發明。應理解，提供這些實例僅為了說明，且不應以任何方式理解為限制本發明。
實例 1
首先，使用亨舍爾混合器（KSM-22，金星機械有限公司（Keum Sung Machinery Co., Ltd））混合作為環氧樹脂的7.01重量%的苯酚芳烷基環氧樹脂（NC-3000，日本化藥（Nippon Kayaku））和5.73重量%的聯苯環氧樹脂（YX-4000，日本環氧樹脂（Japan Epoxy Resin））、作為固化劑的4.32重量%的苯酚酚醛清漆樹脂（DL-92，美華塑料工業株式會社（Meiwa Plastic Industries Co., Ltd.））和1.08重量%的苯酚芳烷基酚醛樹脂（MEH-7851S，美華塑料工業株式會社）、作為固化催化劑的0.89重量%的三苯基膦（北興化學（Hokko Chemical））、作為無機填料的80重量%的10重量%的氧化鋁與70重量%的二氧化矽的混合物、作為偶合劑的0.3重量%的環氧矽烷（KBM-303，信越化學（Shin Etsu Chemical））和0.2重量%的胺基矽烷（KBM-573，信越化學）、作為著色劑的0.37重量%的碳黑（MA-600B，三菱化學公司（Mitsubishi Chemical Corporation））以及作為脫模劑的0.1重量%的巴西棕櫚蠟，從而製備母料。這裡，“重量%”表示用於半導體裝置的包封的環氧樹脂組合物中的每一組分的含量。
製備的母料在90℃到110℃下在連續捏合機中熔融捏合，隨後冷卻和粉碎，從而製備呈粉末形式的組合物。使用壓片機將製備的粉末狀組合物製備成用於半導體裝置的包封的錠化環氧樹脂組合物。
具體來說，將製備的粉末狀組合物引入到壓片機的進料器中，隨後通過朝下移動上衝床且接著朝上移動下衝床來壓縮壓模中的粉末狀組合物，從而製備呈錠劑形式的組合物。這裡，通過朝下移動上衝床和朝上移動下衝床來施加於粉末狀組合物的壓縮負載是6噸，且調整壓模的直徑和高度以製備具有如表4中所繪示的物理性質的用於半導體裝置的包封的錠化環氧樹脂組合物。
實例 2 到實例 9
除環氧樹脂組合物中的每一組分的含量改變為表1中所列出的之外，以與實例1相同的方式製備用於半導體裝置的包封的環氧樹脂組合物。
在調整壓縮負載、壓模的直徑和/或壓模的高度的情況下，製備的環氧樹脂組合物經歷壓縮錠化，從而製備具有如表4中所繪示的物理性質的用於半導體裝置的包封的錠化環氧樹脂組合物。
比較例 1 到比較例 12
除環氧樹脂組合物中的每一組分的含量改變為表2和表3中所列出的之外，以與實例1相同的方式製備用於半導體裝置的包封的環氧樹脂組合物。
在調整壓縮負載、壓模的直徑和/或壓模的高度的情況下，製備的環氧樹脂組合物經歷壓縮錠化，從而製備具有如表5和表6中所繪示的物理性質的用於半導體裝置的包封的錠化環氧樹脂組合物。這裡，比較例8的環氧樹脂組合物在壓縮錠化時不可模製成錠劑。
比較例 13
除環氧樹脂組合物中的每一組分的含量改變為表3中所列出的之外，以與實例1相同的方式製備用於半導體裝置的包封的環氧樹脂組合物。
為了形成圓柱形外周邊部分，使用由鋼形成且具有2.5毫米小孔徑的衝孔網。具體來說，將衝孔網機械加工成具有25毫米高度和1.5毫米厚度的圓柱體，繼而將所述圓柱體安置在具有20釐米直徑的轉子的外周邊處，從而形成圓柱形外周邊部分。接著，轉子以3000轉/分鐘旋轉，使得可通過勵磁線圈將圓柱形外周邊部分加熱到115℃。此後，通過離心粉碎製程來製備具有表6中所繪示的物理性質的樹脂組合物，在所述離心粉碎製程中，使通過在雙螺桿擠壓機中對母料進行熔融捏合同時使用脫氣器脫氣來獲得的熔融物經由轉子上方的雙壁圓柱形主體以2千克/小時的速率進料到轉子中，隨後使用由轉子產生的離心力來迫使熔融物穿過圓柱形外周邊部分的多個孔隙。這裡，在90℃到110℃的溫度下在雙螺桿擠壓機中捏合母料。
比較例 14 到比較例 16
除環氧樹脂組合物中的每一組分的含量改變為表3中所列出的之外，以與實例1相同的方式製備用於半導體裝置的包封的環氧樹脂組合物。
製備的環氧樹脂組合物以與比較例13中相同的方式經歷離心粉碎。比較例14到比較例16的環氧樹脂組合物在離心粉碎時不可模製。表 1
  實例
1 2 3 4 5 6 7 8 9
環氧樹脂 環氧樹脂1 7.01 2.22 2.22 4.44 3.33 3.69 2.95 2.22 2.22
環氧樹脂2 5.73 1.82 1.82 3.62 2.72 3.02 2.42 1.82 1.82
固化劑 固化劑1 4.32 1.37 1.37 2.73 2.05 2.28 1.82 1.37 1.37
固化劑2 1.08 0.34 0.34 0.68 0.51 0.57 0.46 0.34 0.34
無機填料 氧化鋁 10 88 83 37 0 89 91 93 93
二氧化矽 70 5 10 50 70 0 0 0 0
氮化鋁 0 0 0 0 20 0 0 0 0
固化催化劑 0.89 0.28 0.28 0.56 0.42 0.47 0.38 0.28 0.28
偶合劑 偶合劑1 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3
偶合劑2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
著色劑 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37
脫模劑 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
總計 100 100 100 100 100 100 100 100 100
表 2
  比較例
1 2 3 4 5 6 7 8 9 10 11
環氧樹脂 環氧樹脂1 10.69 10.69 7.01 4.44 3.33 4.44 4.44 4.44 4.44 4.44 4.44
環氧樹脂2 8.74 8.74 5.73 3.62 2.72 3.62 3.62 3.62 3.62 3.62 3.62
固化劑 固化劑1 6.59 6.59 4.32 2.73 2.05 2.73 2.73 2.73 2.73 2.73 2.73
固化劑2 1.65 1.65 1.08 0.68 0.51 0.68 0.68 0.68 0.68 0.68 0.68
無機填料 氧化鋁 0 0 0 0 0 0 0 0 0 0 37
二氧化矽 70 70 80 87 90 87 87 87 87 87 40
氮化鋁 0 0 0 0 0 0 0 0 0 0 10
固化催化劑 1.36 1.36 0.89 0.56 0.42 0.56 0.56 0.56 0.56 0.56 0.56
偶合劑 偶合劑1 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3
偶合劑2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
著色劑 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37
脫模劑 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
總計 100 100 100 100 100 100 100 100 100 100 100
表 3
  比較例
12 13 14 15 16
環氧樹脂 環氧樹脂1 2.22 3.33 10.69 2.22 2.22
環氧樹脂2 1.82 2.72 8.74 1.82 1.82
固化劑 固化劑1 1.37 2.05 6.59 1.37 1.37
固化劑2 0.34 0.51 1.65 0.34 0.34
無機填料 氧化鋁 93 0 0 0 93
二氧化矽 0 90 70 93 0
氮化鋁 0 0 0 0 0
固化催化劑 0.28 0.42 1.36 0.28 0.28
偶合劑 偶合劑1 0.3 0.3 0.3 0.3 0.3
偶合劑2 0.2 0.2 0.2 0.2 0.2
著色劑 0.37 0.37 0.37 0.37 0.37
脫模劑 0.1 0.1 0.1 0.1 0.1
總計 100 100 100 100 100
在表1到表3中，環氧樹脂1是苯酚芳烷基環氧樹脂，環氧樹脂2是聯苯環氧樹脂，固化劑1是苯酚酚醛清漆樹脂，固化劑2是苯酚芳烷基酚系樹脂，固化催化劑是三苯基膦，氧化鋁具有9微米平均粒徑（D50），二氧化矽具有8微米平均粒徑（D50），氮化鋁具有3微米平均粒徑（D50），偶合劑1是環氧矽烷，且偶合劑2是胺基矽烷。
根據以下物理性質來評估實例和比較例中的用於半導體裝置的包封的錠化環氧樹脂組合物中的每一種。結果繪示於表4、表5以及表6中。
（1）用於密封半導體裝置的錠化環氧樹脂組合物的錠劑大小：使用ASTM標準篩目篩，用0.1毫米篩目（ASTM第140號）和2.8毫米篩目（ASTM第7號）將在實例和比較例中製備的錠化環氧樹脂組合物中的每一種篩分10分鐘，同時使用篩振動器以100衝程每分鐘的速率振盪錠化樹脂組合物，隨後測量穿過2.8毫米篩目且保留在0.1毫米篩目上的錠劑的重量和保留在2.8毫米篩目上或穿過0.1毫米篩目的錠劑的重量，從而確定具有大於或等於0.1毫米且小於2.8毫米的大小的錠劑的比例（%）。
（2）填充密度：在使用ASTM標準篩目篩來篩分時穿過2.8毫米篩目且保留在0.1毫米篩目上的錠劑上測量填充密度。具體來說，秤取錠劑中的一些以獲得樣本，隨後使用電子秤來測量樣本的重量W。接著，將矽酮表面活性劑引入到一半填充有水的50毫升刻度量筒中，隨後測量量筒中的初始體積V1。接著，將秤取的錠劑引入到量筒中，隨後測量量筒中的最終體積V2。接著，根據等式1計算出錠劑的填充密度（克/毫升）。這裡，在體積測量之前，搖晃量筒以去除錠劑之間的空氣，且通過對五個測量值求平均來計算出填充密度： 填充密度（克/毫升）=W/（V2-V1）           ---（1）
（3）固化密度：在175℃±5℃模具溫度、7 MPa注入壓力以及120秒固化時間的條件下在傳送模製機中將在實例和比較例中製備的錠化環氧樹脂組合物中的每一種模製成具有50毫米×3毫米（直徑×厚度）大小的圓盤，隨後在175℃下在烘箱中後模具固化（PMC）4小時，且接著測量圓盤的質量和體積，隨後計算質量與體積的比（質量/體積，單位：克/毫升）。
（4）熱導率：在175℃模具溫度、9 MPa注入壓力以及120秒固化時間的條件下將在實例和比較例中製備的錠化環氧樹脂組合物中的每一種注入到傳送模製機中以製備用於評估熱導率的試樣，隨後根據ASTM D5470在25℃下使用熱導率測試儀（QTM-500，京都電子（Kyoto Electronics））來測量試樣的熱導率。
（5）因壓縮模製時精細顆粒的散射所致的對儀器的污染程度：在壓縮模製中使用壓縮模製儀器（PMC-1040，東和株式會社（TOWA Corporation））。首先，將25克在實例和比較例中製備的錠化環氧樹脂組合物中的每一種放置在振動進料器中，且重複20次以1.0克/秒的恆定速率進料錠化環氧樹脂組合物的操作。在完成進料操作之後，去除振動進料器，隨後測量粘附到振動進料器的壁的錠化環氧樹脂組合物的重量。當粘附到振動進料器的壁的錠化環氧樹脂組合物的總重量小於150毫克且未用肉眼觀察到錠化環氧樹脂組合物粘附到振動進料器的內管時，將對應試樣評定為×；當粘附到振動進料器的壁的錠化環氧樹脂組合物的總重量小於150毫克且用肉眼觀察到錠化環氧樹脂組合物粘附到振動進料器的內管時，將對應試樣評定為Δ；並且當粘附到振動進料器的壁的錠化環氧樹脂組合物的總重量大於或等於50毫克且用肉眼觀察到振動進料器的內管變黑（指示錠化環氧樹脂組合物嚴重粘附到內管）時，將對應試樣評定為○。
（6）電線偏移：首先，將芯片（裸片大小：10毫米×10毫米×0.5毫米（長度×寬度×厚度））安裝在印刷線路板（基板大小：240毫米×77.5毫米（長度×寬度），單元大小：14毫米×18毫米（寬度×長度）上。使用具有0.8毫米直徑的金線將芯片中的每一個連接到印刷線路板。使用壓縮模製儀器（PMC-1040，東和株式會社）。將預定量的在實例和比較例中製備的錠化環氧樹脂組合物中的每一種引入到壓縮模製儀器中，隨後在175℃模具溫度、100秒固化時間以及10噸模製壓力和0.7毫米模製厚度的條件下模製半導體封裝。接著，使用X射線檢驗設備（Tosmicron-S4090，東芝（Toshiba））對半導體封裝的10條電線（長度：3毫米）進行電線偏移評估。表 4
  實例
項目 1 2 3 4 5 6 7 8 9
製備條件 製備 方法 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化
壓縮 負載 （噸） 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.2
錠劑大小 平均 直徑 （D，毫米） 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5
平均 高度 （H，毫米） 0.43 0.52 0.52 0.48 0.54 0.57 0.59 0.59 0.63
具有大於或等於0.1毫米且小於2.8毫米的大小的錠劑的含量（%） 97.2 97.2 97.2 97.5 98.1 97.2 97.2 97.3 97.1
組合物 無機 填料 氧化鋁+二氧化矽 氧化鋁+二氧化矽 氧化鋁+二氧化矽 氧化鋁+二氧化矽 二氧化矽+氮化鋁 氧化鋁 氧化鋁 氧化鋁 氧化鋁
無機填料的 含量 （重量%） 80 93 93 87 90 89 91 93 93
填充密度 （克/毫升） 1.71 2.57 2.39 1.83 2.06 2.29 2.29 2.72 2.51
固化密度 （克/毫升） 1.96 3.03 2.99 2.21 2.49 2.9 2.9 3.16 3.16
密度比（填充密度/固化密度） 0.87 0.85 0.80 0.83 0.83 0.79 0.79 0.86 0.79
形狀 圓柱體 圓柱體 圓柱體 圓柱體 圓柱體 圓柱體 圓柱體 圓柱體 圓柱體
熱導率 （瓦/米度） 2 2.7 2.7 2.3 7.2 4.1 4.3 4.9 4.9
歸因於壓縮模製時的精細顆粒的對儀器的污染程度 × × × × × × × × ×
電線偏移 （%） 2.4 9.2 9.7 6.2 8.1 4.7 6.4 9.4 8.1
表 5
  比較例
項目 1 2 3 4 5 6 7 8 9
製備條件 製備方法 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化 壓縮錠化
壓縮負載（噸） 0.1 0.3 0.2 0.2 0.4 2 1.3 0.05 0.2
錠劑大小 平均直徑（毫米） 1.5 1.5 1.5 1.5 1.5 1.5 1.5 不可模製 1.5
平均高度（毫米） 1.3 0.9 1.1 1.1 0.7 0.3 0.44 1.1
具有大於或等於0.1毫米且小於2.8毫米的大小的錠劑的含量（%） 95.4 98.3 98.3 97.2 97.3 98.3 97.8 93
組合物 無機填料 二氧化矽 二氧化矽 二氧化矽 二氧化矽 二氧化矽 二氧化矽 二氧化矽 二氧化矽 二氧化矽
無機填料的含量（重量%） 70 70 80 87 90 87 87 87 87
填充密度（克/毫升） 1.06 1.21 1.32 1.41 1.61 1.83 1.75 不可模製 1.41
固化密度（克/毫升） 1.78 1.78 1.89 1.96 2 1.97 1.97 1.97
密度比（填充密度/固化密度） 0.59 0.68 0.70 0.72 0.81 0.93 0.89 0.72
形狀 圓柱體 圓柱體 圓柱體 圓柱體 圓柱體 圓柱體 圓柱體 圓柱體
熱導率（瓦/米度） 0.62 0.62 0.77 0.85 1.1 0.7 0.7 0.7
歸因於壓縮模製時的精細顆粒的對儀器的污染程度 ○ × × × × × × ○
電線偏移（%） 0 0 1.4 1.9 3.2 22.4 16.7 2.2
表 6
  比較例
項目 10 11 12 13 14 15 16
製備條件 製備方法 壓縮錠化 壓縮錠化 壓縮錠化 離心粉碎 離心粉碎 離心粉碎 離心粉碎
壓縮負載 （噸） 0.2 1.5 1.5 - 不可模製 不可模製 不可模製
錠劑大小 平均直徑 （毫米） 1.5 1.5 1.5 -
平均高度 （毫米） 1.1 0.63 0.63 -
具有大於或等於0.1毫米且小於2.8毫米的大小的錠劑的含量（%） 96 97.3 97.3 -
組合物 無機填料 二氧化矽 氧化鋁+二氧化矽+氮化鋁 氧化鋁 二氧化矽 二氧化矽 二氧化矽 氧化鋁
無機填料的含量（%） 87 87 93 90 70 93 93
填充密度（克/毫升） 1.41 1.6 2.84 1.81 不可模製 不可模製 不可模製
固化密度（克/毫升） 1.97 1.92 3.16 2
密度比 （填充密度/固化密度） 0.72 0.83 0.90 0.91
形狀 圓柱體 圓柱體 圓柱體 細粒
熱導率（瓦/米度） 0.7 2.2 4.9 1
歸因於壓縮模製時的精細顆粒的對儀器的污染程度 Δ × × ×
電線偏移（%） 2 19.4 20.3 0
如表4中所繪示，可防止根據本發明的錠化環氧樹脂組合物在通過壓縮模製來包封半導體裝置時散射和/或粘附到壓縮模製儀器，從而減少對儀器的污染。此外，根據本發明的錠化環氧樹脂組合物具有2瓦/米度或大於2瓦/米度的熱導率，且因此允許使用所述錠化環氧樹脂組合物來包封的半導體裝置具有較高熱耗散，從而減少因在半導體裝置的操作期間所產生的熱所致的半導體封裝的故障和開裂。
相反，如表5和表6中所繪示，未能滿足本文中所闡述的所有要求（（i）、（ii）以及（iii））的比較例1到比較例12的環氧樹脂組合物雖然通過壓縮錠化來製備，但歸因於塵粒而在減小電線偏移、提高熱導率以及防止對壓縮模製儀器的污染方面呈現不良性質。
應理解，本領域的技術人員可以在不脫離本發明的精神和範圍的情況下進行各種修改、變化、更改以及等效實施例。
1:錠化環氧樹脂組合物 2:振動進料器 3:組合物進料容器 4:擋閘 5:下部模腔 6、101:半導體裝置 7:上部基板 102:包封體 103:裸片墊 104:裸片接合材料 105:引線框 106:電線 D:直徑 H:高度 T:厚度
圖1是示出根據本發明的每一示範性錠劑的形狀、直徑以及高度的視圖。 圖2（a）及圖2（b）是示出根據本發明的通過壓縮模製來包封半導體裝置的示範性製程的視圖。 圖3是根據本發明的通過壓縮模製來包封的示範性半導體裝置的視圖。
D:直徑
H:高度

Claims (15)

  1. 一種用於半導體裝置的包封的錠化環氧樹脂組合物，所述錠化環氧樹脂組合物滿足以下要求：(i)具有如通過使用ASTM標準篩的篩分析所測量的大於或等於0.1毫米且小於2.8毫米的直徑和大於或等於0.1毫米且小於2.8毫米的高度的錠劑的比例是97重量%或大於97重量%；(ii)所述錠劑具有大於1.7克/毫升的填充密度；以及(iii)所述錠劑的填充密度與固化密度的比在0.6到0.87範圍內，其中所述錠化環氧樹脂組合物通過壓縮錠化來製備。
  2. 如申請專利範圍第1項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，其中所述錠劑具有圓柱形形狀。
  3. 如申請專利範圍第1項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，包括：無機填料，包括選自以下群組的至少一種：二氧化矽、氧化鋁、氮化鋁、碳酸鈣、碳酸鎂、氧化鎂、粘土、滑石、矽酸鈣、氧化鈦、氧化銻、玻璃纖維以及氮化硼。
  4. 如申請專利範圍第3項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，其中所述無機填料以70重量%到99重量%的量存在於所述錠化環氧樹脂組合物中。
  5. 如申請專利範圍第3項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，其中所述二氧化矽以90重量%或小於90重量%的量存在於所述無機填料中。
  6. 如申請專利範圍第3項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，其中所述氮化鋁以50重量%或小於50重量%的量存在於所述無機填料中。
  7. 如申請專利範圍第3項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，其中所述無機填料具有3微米到15微米的D50平均粒徑。
  8. 如申請專利範圍第3項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，其中所述氧化鋁以10重量%到100重量%的量存在於所述無機填料中。
  9. 如申請專利範圍第3項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，其中所述氧化鋁以75重量%到98重量%的量存在於所述錠化環氧樹脂組合物中。
  10. 如申請專利範圍第3項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，包括：氧化鋁與二氧化矽的混合物作為所述無機填料。
  11. 如申請專利範圍第10項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，其中所述氧化鋁與二氧化矽的混合物以75重量%到98重量%的量存在於所述錠化環氧樹脂組合物中。
  12. 如申請專利範圍第3項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，包括：二氧化矽與氮化鋁的混合物作為所述無機填料。
  13. 如申請專利範圍第12項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，其中所述二氧化矽與氮化鋁的混合物以75重量%到98重量%的量存在於所述錠化環氧樹脂組合物中。
  14. 如申請專利範圍第1項所述的用於半導體裝置的包封的錠化環氧樹脂組合物，其中所述錠劑具有1.9克/毫升到4克/毫升的固化密度。
  15. 一種半導體裝置，使用如申請專利範圍第1至14項中任一項所述的用於半導體裝置的包封的錠化環氧樹脂組合物來包封。
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Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59204614A (ja) * 1983-05-07 1984-11-20 Hitachi Chem Co Ltd 電子部品封止用成形材料
JPS60224234A (ja) * 1984-04-21 1985-11-08 Nitto Electric Ind Co Ltd 半導体装置の製造方法
JP3573565B2 (ja) 1996-04-02 2004-10-06 京セラケミカル株式会社 エポキシ樹脂組成物タブレット
JP4020078B2 (ja) * 2001-10-30 2007-12-12 日立化成工業株式会社 封止材タブレット、その製造方法及び電子部品装置
JP2007077333A (ja) * 2005-09-15 2007-03-29 Hitachi Chem Co Ltd 封止用エポキシ樹脂成形材料の製造方法、封止用エポキシ樹脂成形材料及び電子部品装置
US8653205B2 (en) 2009-03-11 2014-02-18 Sumitomo Bakelite Co., Ltd. Resin composition for encapsulating semiconductor and semiconductor device
JP5189606B2 (ja) * 2010-01-26 2013-04-24 パナソニック株式会社 半導体封止用エポキシ樹脂組成物、及び半導体装置
KR101397221B1 (ko) * 2013-05-30 2014-05-20 삼성전기주식회사 열전도도 및 전기적 특성이 우수한 인쇄회로기판용 절연 수지 조성물, 절연필름, 프리프레그 및 인쇄회로기판
JP6315170B2 (ja) 2013-09-30 2018-04-25 ナガセケムテックス株式会社 半導体封止用エポキシ樹脂組成物、半導体実装構造体、およびその製造方法
JP6555000B2 (ja) * 2015-08-19 2019-08-07 住友ベークライト株式会社 半導体封止用エポキシ樹脂粒状体の製造方法、及び、半導体装置の製造方法
KR102097798B1 (ko) * 2017-01-06 2020-04-06 삼성에스디아이 주식회사 과립상 반도체 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201033279A (en) * 2008-12-10 2010-09-16 Sumitomo Bakelite Co Granular epoxy resin composition for encapsulation of semiconductor and, semiconductor device made with the same and process for manufacturing semiconductor device

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