TWI743463B - 半導體光元件的製造方法以及半導體光元件的中間體 - Google Patents

半導體光元件的製造方法以及半導體光元件的中間體 Download PDF

Info

Publication number
TWI743463B
TWI743463B TW108111198A TW108111198A TWI743463B TW I743463 B TWI743463 B TW I743463B TW 108111198 A TW108111198 A TW 108111198A TW 108111198 A TW108111198 A TW 108111198A TW I743463 B TWI743463 B TW I743463B
Authority
TW
Taiwan
Prior art keywords
layer
thickness
etching stop
semiconductor
optical element
Prior art date
Application number
TW108111198A
Other languages
English (en)
Chinese (zh)
Other versions
TW202004854A (zh
Inventor
小鹿優太
門脇嘉孝
生田哲也
Original Assignee
日商同和電子科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2019059233A external-priority patent/JP6785331B2/ja
Application filed by 日商同和電子科技股份有限公司 filed Critical 日商同和電子科技股份有限公司
Publication of TW202004854A publication Critical patent/TW202004854A/zh
Application granted granted Critical
Publication of TWI743463B publication Critical patent/TWI743463B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
TW108111198A 2018-03-30 2019-03-29 半導體光元件的製造方法以及半導體光元件的中間體 TWI743463B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018-069432 2018-03-30
JP2018069432 2018-03-30
JP2019059233A JP6785331B2 (ja) 2018-03-30 2019-03-26 半導体光デバイスの製造方法及び半導体光デバイスの中間体
JP2019-059233 2019-03-26

Publications (2)

Publication Number Publication Date
TW202004854A TW202004854A (zh) 2020-01-16
TWI743463B true TWI743463B (zh) 2021-10-21

Family

ID=68062135

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108111198A TWI743463B (zh) 2018-03-30 2019-03-29 半導體光元件的製造方法以及半導體光元件的中間體

Country Status (2)

Country Link
TW (1) TWI743463B (ja)
WO (1) WO2019189514A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111653649B (zh) * 2020-06-05 2023-09-05 中国科学院上海微系统与信息技术研究所 一种Si基InGaAs光电探测器的制备方法及光电探测器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201712734A (zh) * 2015-09-21 2017-04-01 晶元光電股份有限公司 一種重複使用於製造發光元件的基板之方法
TW201802952A (zh) * 2016-06-30 2018-01-16 同和電子科技股份有限公司 半導體光元件的製造方法以及半導體光元件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2988796B2 (ja) * 1993-01-28 1999-12-13 沖電気工業株式会社 集積回路装置の製造方法
JPH10173289A (ja) * 1996-12-06 1998-06-26 Hitachi Ltd 半導体装置の製造方法
JPH11168262A (ja) * 1997-09-30 1999-06-22 Canon Inc 面型光デバイス、その製造方法、および表示装置
JP2000196189A (ja) * 1998-12-24 2000-07-14 Toshiba Corp 面発光型半導体レーザ
JP2005340504A (ja) * 2004-05-27 2005-12-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4629687B2 (ja) * 2007-01-29 2011-02-09 株式会社日立製作所 光半導体素子、及びその製造方法
US8559478B2 (en) * 2008-01-18 2013-10-15 The Regents Of The University Of California Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators
JP5287460B2 (ja) * 2009-04-17 2013-09-11 富士通株式会社 半導体レーザ
US8409888B2 (en) * 2009-06-30 2013-04-02 Joseph John Rumpler Highly integrable edge emitting active optical device and a process for manufacture of the same
JP2013016582A (ja) * 2011-07-01 2013-01-24 Sumitomo Electric Ind Ltd 光集積素子の製造方法
JP2014013844A (ja) * 2012-07-04 2014-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体受光素子およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201712734A (zh) * 2015-09-21 2017-04-01 晶元光電股份有限公司 一種重複使用於製造發光元件的基板之方法
TW201802952A (zh) * 2016-06-30 2018-01-16 同和電子科技股份有限公司 半導體光元件的製造方法以及半導體光元件

Also Published As

Publication number Publication date
WO2019189514A1 (ja) 2019-10-03
TW202004854A (zh) 2020-01-16

Similar Documents

Publication Publication Date Title
JP6452651B2 (ja) 半導体光デバイスの製造方法および半導体光デバイス
TWI713235B (zh) 半導體發光元件及其製造方法
JP6785331B2 (ja) 半導体光デバイスの製造方法及び半導体光デバイスの中間体
WO2020255976A1 (ja) 半導体光デバイスの製造方法及び半導体光デバイス
TWI743463B (zh) 半導體光元件的製造方法以及半導體光元件的中間體
WO2019216308A1 (ja) 半導体発光素子及び半導体発光素子の製造方法
JP6875076B2 (ja) 半導体発光素子の製造方法および半導体発光素子
JP7413599B1 (ja) Ｉｉｉ－ｖ族化合物半導体発光素子及びｉｉｉ－ｖ族化合物半導体発光素子の製造方法