TWI743105B - 用於離子植入之摻雜劑組成物 - Google Patents

用於離子植入之摻雜劑組成物 Download PDF

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Publication number
TWI743105B
TWI743105B TW106112054A TW106112054A TWI743105B TW I743105 B TWI743105 B TW I743105B TW 106112054 A TW106112054 A TW 106112054A TW 106112054 A TW106112054 A TW 106112054A TW I743105 B TWI743105 B TW I743105B
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TW
Taiwan
Prior art keywords
species
composition
dopant source
item
patent application
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Application number
TW106112054A
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English (en)
Chinese (zh)
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TW201807235A (zh
Inventor
亞倫 瑞尼克
夏威尼 辛哈
Original Assignee
美商普雷瑟科技股份有限公司
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Publication of TW201807235A publication Critical patent/TW201807235A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW106112054A 2016-04-11 2017-04-11 用於離子植入之摻雜劑組成物 TWI743105B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662321069P 2016-04-11 2016-04-11
US62/321,069 2016-04-11
US15/483,522 US20170292186A1 (en) 2016-04-11 2017-04-10 Dopant compositions for ion implantation
US15/483,522 2017-04-10

Publications (2)

Publication Number Publication Date
TW201807235A TW201807235A (zh) 2018-03-01
TWI743105B true TWI743105B (zh) 2021-10-21

Family

ID=59998279

Family Applications (3)

Application Number Title Priority Date Filing Date
TW106112054A TWI743105B (zh) 2016-04-11 2017-04-11 用於離子植入之摻雜劑組成物
TW106112052A TWI724152B (zh) 2016-04-11 2017-04-11 適用於離子植入以產生含硼離子束電流之硼組成物
TW106112055A TWI826349B (zh) 2016-04-11 2017-04-11 適於離子植入以產生含鍺之離子束電流的鍺組成物

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW106112052A TWI724152B (zh) 2016-04-11 2017-04-11 適用於離子植入以產生含硼離子束電流之硼組成物
TW106112055A TWI826349B (zh) 2016-04-11 2017-04-11 適於離子植入以產生含鍺之離子束電流的鍺組成物

Country Status (8)

Country Link
US (4) US20170294289A1 (https=)
EP (1) EP3443137A1 (https=)
JP (1) JP6990691B2 (https=)
KR (2) KR102443564B1 (https=)
CN (1) CN109362231B (https=)
SG (2) SG11201808852YA (https=)
TW (3) TWI743105B (https=)
WO (1) WO2017180562A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11098402B2 (en) * 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
WO2019221812A1 (en) * 2018-05-17 2019-11-21 Entegris, Inc. Germanium tetraflouride and hydrogen mixtures for an ion implantation system
US10892137B2 (en) * 2018-09-12 2021-01-12 Entegris, Inc. Ion implantation processes and apparatus using gallium
US10923309B2 (en) * 2018-11-01 2021-02-16 Applied Materials, Inc. GeH4/Ar plasma chemistry for ion implant productivity enhancement
US11232925B2 (en) 2019-09-03 2022-01-25 Applied Materials, Inc. System and method for improved beam current from an ion source
US11120966B2 (en) * 2019-09-03 2021-09-14 Applied Materials, Inc. System and method for improved beam current from an ion source
WO2021232036A1 (en) * 2020-05-11 2021-11-18 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
EP4222773A4 (en) 2020-10-02 2025-04-30 Entegris, Inc. METHODS AND SYSTEMS FOR THE PRODUCTION OF ALUMINUM IONS
EP4710359A1 (en) * 2023-05-08 2026-03-18 Entegris, Inc. Ion implantation system and related methods

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101558183A (zh) * 2006-12-08 2009-10-14 应用材料股份有限公司 等离子体沉浸离子注入工艺

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1305350C (en) * 1986-04-08 1992-07-21 Hiroshi Amada Light receiving member
US4891330A (en) * 1987-07-27 1990-01-02 Energy Conversion Devices, Inc. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
US6007609A (en) 1997-12-18 1999-12-28 Uop Llc Pressurized container with restrictor tube having multiple capillary passages
US5937895A (en) 1998-04-17 1999-08-17 Uop Llc Fail-safe delivery valve for pressurized tanks
US6045115A (en) 1998-04-17 2000-04-04 Uop Llc Fail-safe delivery arrangement for pressurized containers
US6756600B2 (en) * 1999-02-19 2004-06-29 Advanced Micro Devices, Inc. Ion implantation with improved ion source life expectancy
US7396381B2 (en) * 2004-07-08 2008-07-08 Air Products And Chemicals, Inc. Storage and delivery systems for gases held in liquid medium
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法
US7708028B2 (en) 2006-12-08 2010-05-04 Praxair Technology, Inc. Fail-safe vacuum actuated valve for high pressure delivery systems
US7655931B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
US7905247B2 (en) 2008-06-20 2011-03-15 Praxair Technology, Inc. Vacuum actuated valve for high capacity storage and delivery systems
EP2815424B1 (en) * 2012-02-14 2017-08-16 Entegris Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
SG11201500684RA (en) * 2012-08-28 2015-04-29 Praxair Technology Inc Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
SG11201506605XA (en) * 2013-03-05 2015-09-29 Entegris Inc Ion implantation compositions, systems, and methods
US8883620B1 (en) * 2013-04-24 2014-11-11 Praxair Technology, Inc. Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process
CN105431927A (zh) * 2013-05-21 2016-03-23 恩特格里斯公司 富集硅的前体组合物及使用其的设备和方法
US9165773B2 (en) 2013-05-28 2015-10-20 Praxair Technology, Inc. Aluminum dopant compositions, delivery package and method of use
SG11201601015RA (en) * 2013-08-16 2016-03-30 Entegris Inc Silicon implantation in substrates and provision of silicon precursor compositions therefor
US9209033B2 (en) * 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
CN106536377B (zh) * 2014-06-13 2021-01-29 恩特格里斯公司 压力调节式流体储存与施配容器的基于吸附剂的压力稳定
US9909670B2 (en) 2015-03-04 2018-03-06 Praxair Technology, Inc. Modified vacuum actuated valve assembly and sealing mechanism for improved flow stability for fluids sub-atmospherically dispensed from storage and delivery systems

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101558183A (zh) * 2006-12-08 2009-10-14 应用材料股份有限公司 等离子体沉浸离子注入工艺

Also Published As

Publication number Publication date
TW201807235A (zh) 2018-03-01
TWI724152B (zh) 2021-04-11
US20170294314A1 (en) 2017-10-12
US20170294289A1 (en) 2017-10-12
EP3443137A1 (en) 2019-02-20
WO2017180562A1 (en) 2017-10-19
JP2019517158A (ja) 2019-06-20
US20170292186A1 (en) 2017-10-12
KR20180132133A (ko) 2018-12-11
CN109362231B (zh) 2022-12-27
TW201807234A (zh) 2018-03-01
KR102443564B1 (ko) 2022-09-16
CN109362231A (zh) 2019-02-19
TW201807236A (zh) 2018-03-01
JP6990691B2 (ja) 2022-02-15
KR20220129108A (ko) 2022-09-22
TWI826349B (zh) 2023-12-21
SG11201808852YA (en) 2018-11-29
SG10202010058QA (en) 2020-11-27
US20200013621A1 (en) 2020-01-09

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